Manufacturing method of substrate through hole, manufacturing method of interposer, and manufacturing method and packaging method of packaging structure
By grinding, thinning and insulating layer etching on the second surface of the substrate in integrated circuit manufacturing, substrate through holes are formed, which solves the problem of poor uniformity of the through-silicon through-pore process and improves processing yield.
Patent Information
- Application Number
- CN202411345421.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-25
- Publication Date
- 2024-12-31
AI Technical Summary
In integrated circuit manufacturing, the process uniformity of silicon through-holes is difficult to meet, resulting in poor processing yields, and the existing technology has failed to effectively solve this problem.
By grinding and thinning on the second surface of the substrate, the first hole is exposed, and then etched on the second insulating layer, the first hole is exposed from the insulating layer, forming a substrate through hole, reducing process uniformity Require.
It effectively improves processing yield, eliminates the influence of inconsistent hole etching depth, and reduces the uniformity requirements for the insulating layer etching process.
Smart Images
Figure CN119230481A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of integrated circuits, and in particular to a method for manufacturing a substrate through hole, a method for manufacturing an intermediate layer, a method for manufacturing a packaging structure, and a packaging method. Background Art
[0002] In the manufacture of integrated circuits, it is often necessary to make silicon vias on a silicon substrate so as to electrically connect the circuit on the upper surface of the silicon substrate with the circuit on the lower surface of the silicon substrate. The silicon via is usually made by sequentially performing the following processes: etching a deep hole on the front side of the silicon wafer, providing an oxide layer on the silicon wafer and the surface of the deep hole, metallizing the deep hole, grinding and thinning the back side of the silicon wafer and dry etching silicon to expose the silicon via from the back side of the silicon, depositing a passivation layer on the back side of the silicon wafer, and chemically mechanically polishing the passivation layer of the silicon wafer from the back side to expose the silicon via from the passivation layer.
[0003] However, such a method for forming through silicon vias has very high requirements for process uniformity. For example, if the dry etching is uneven, not only will the surface of the silicon wafer be uneven after dry etching, but the exposed height of the through silicon vias will also vary greatly. For another example, if the depth uniformity of the through silicon vias is not good, that is, some through silicon vias are deeper and some are shallower, then after dry etching on the back of the silicon wafer, the exposed height of the through silicon vias may also vary greatly. If the difference in the exposed height of the through silicon vias is too large, it will not only increase the difficulty of subsequent chemical mechanical polishing of the passivation layer, but also easily cause the exposed part of the through silicon via to break, reducing the yield.
[0004] There is no effective solution in the relevant technology to the problem that process uniformity is difficult to meet and the processing yield is poor during silicon through-hole via processing. Summary of the invention
[0005] In view of this, the embodiments of the present invention provide a method for manufacturing a substrate through hole, a method for manufacturing an intermediate layer, a method for manufacturing a packaging structure, and a packaging method, which can effectively reduce the requirements for process uniformity and greatly improve the processing yield.
[0006] In a first aspect, an embodiment of the present invention provides a method for manufacturing a substrate through hole, comprising: providing a substrate, wherein at least two first holes are formed on a first surface of the substrate, each of the first holes comprising a first insulating layer arranged on a bottom and a side wall of the hole, and a first metal layer on the first insulating layer; grinding and thinning the substrate from a second surface of the substrate so that the first holes are exposed from the second surface of the substrate, wherein the second surface is a surface of the substrate opposite to the first surface; providing a second insulating layer on the second surface of the substrate; and etching an area in the second insulating layer covering the first holes so that the first holes are exposed from the second insulating layer to form a substrate through hole.
[0007] In one embodiment, the grinding and thinning of the substrate from the second surface of the substrate includes: physically grinding the substrate from the second surface of the substrate so that the first hole is exposed from the second surface of the substrate; and chemically mechanically polishing the substrate from the second surface of the substrate after physical grinding so as to make the second surface flat.
[0008] In one embodiment, after grinding and thinning the substrate from the second surface of the substrate and before providing a second insulating layer on the second surface of the substrate, the method further includes: cleaning the substrate to remove abrasive particles generated by grinding, wherein the abrasive particles include metal particles.
[0009] In one embodiment, providing a second insulating layer on the second surface of the substrate includes: forming the second insulating layer by sequentially depositing silicon dioxide and silicon nitride on the second surface of the substrate; or forming the second insulating layer by coating a preset organic material on the second surface of the substrate.
[0010] In one embodiment, the preset organic material is photosensitive; the etching of the area in the second insulating layer covering the first hole includes: removing the area in the second insulating layer covering the first hole by exposing and developing the preset organic material.
[0011] In one embodiment, etching the area covering the first hole in the second insulating layer to expose the first hole from the second insulating layer includes: coating a photoresist on the second insulating layer; removing the photoresist in the area corresponding to the first hole by exposure and development to obtain a photoresist pattern layer; and etching the second insulating layer using the photoresist pattern layer as a mask to expose the first hole from the second insulating layer.
[0012] In one embodiment, etching the second insulating layer using the photolithography pattern layer as a mask includes: using the photolithography pattern layer as a mask to dry-etch a region of the second insulating layer exposed by the photolithography pattern layer.
[0013] In one embodiment, after etching the second insulating layer using the photolithography pattern layer as a mask, the method further includes: removing the photolithography pattern layer, or curing the photolithography pattern layer on the second insulating layer.
[0014] In one embodiment, a bottom cross-section of the first hole is larger than a top cross-section of the first hole.
[0015] In one embodiment, the thickness of the second insulating layer is 1 micrometer to 2 micrometers.
[0016] In one embodiment, the substrate includes any one of the following: a silicon substrate, a glass substrate, and a ceramic substrate.
[0017] In a second aspect, an embodiment of the present invention further provides a method for manufacturing an intermediate layer, comprising: providing a first substrate, wherein at least two first holes are formed on a first surface of the first substrate, each of the first holes comprising a first insulating layer arranged on the bottom and side walls of the hole, and a first metal layer on the first insulating layer; manufacturing a first metal bump on the first surface of the first substrate so that the first metal bump is coupled to the first hole to obtain a second substrate; applying any one of the methods for manufacturing a substrate through hole provided in the embodiments of the present invention to the second substrate so that the first hole forms the substrate through hole; manufacturing a second metal bump on the second surface of the second substrate so that the second metal bump is coupled to the substrate through hole.
[0018] In one embodiment, forming a first metal bump on the first surface of the first substrate so that the first metal bump is coupled to the first hole includes: forming a first redistribution layer on the first surface of the first substrate; forming the first metal bump on the first redistribution layer, and the first metal bump is coupled to the first hole through the first redistribution layer.
[0019] In one embodiment, the step of producing a second metal bump on the second surface of the second substrate so that the second metal bump is coupled to the substrate through hole includes: producing a second redistribution layer on the second surface of the second substrate; producing the second metal bump on the second redistribution layer, and the second metal bump is coupled to the substrate through hole through the second redistribution layer.
[0020] In a third aspect, an embodiment of the present invention further provides a method for manufacturing a packaging structure, comprising: providing an intermediary layer and a packaging substrate, wherein the intermediary layer is manufactured based on any one of the intermediary layer manufacturing methods provided in the embodiments of the present invention; coupling the intermediary layer with the packaging substrate through the second metal bump of the intermediary layer to obtain the packaging structure.
[0021] In a fourth aspect, an embodiment of the present invention further provides a packaging method, comprising: providing a chip to be packaged and a packaging structure, wherein the packaging structure is manufactured based on any one of the packaging structure manufacturing methods provided in the embodiments of the present invention; coupling the chip to be packaged with the packaging structure through the first metal bump.
[0022] In the method for manufacturing a substrate through hole, a method for manufacturing an intermediate layer, a method for manufacturing a packaging structure, and a packaging method provided by the embodiments of the present invention, when the substrate is subjected to a grinding and thinning operation, the first hole is directly exposed from the second surface of the substrate, and then the second insulating layer is etched to expose the first hole from the second insulating layer. Compared with the prior art in which the first holes are exposed from the second surface of the substrate by dry etching after grinding and thinning, each first hole still maintains its original etching depth. In the method for manufacturing a substrate through hole provided by the present invention, on the one hand, since the second surface of the substrate remains flush after grinding and thinning, no matter the original depth of each first hole Whether they are consistent, the depth of each first hole after grinding can be kept consistent, thereby effectively eliminating the influence of inconsistent etching depth of each first hole. On the other hand, since when the second insulating layer is etched to expose the first hole, the insulating layer material and the first metal layer material in the first hole have different sensitivities to the etchant and have a higher etching selectivity, it can tolerate a certain degree of over-etching of the second insulating layer, thereby greatly reducing the uniformity requirements of the second insulating layer and the uniformity requirements of the second insulating layer etching process. Therefore, the method for manufacturing a substrate through hole provided in an embodiment of the present invention can effectively reduce the requirements for the uniformity of the processing technology and effectively improve the processing yield. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0024] Figure 1 A flow chart of a method for manufacturing a substrate through hole provided by an embodiment of the present invention; Figure 2 for Figure 1 The corresponding process flow diagram; Figure 3 A flow chart of a method for manufacturing an interposer provided in an embodiment of the present invention; Figure 4 for Figure 3 The corresponding process flow diagram; Figure 5 A flow chart of a method for manufacturing a packaging structure provided by an embodiment of the present invention; Figure 6 for Figure 5 The corresponding process flow diagram; Figure 7 A flow chart of a packaging method provided by an embodiment of the present invention; Figure 8 for Figure 7 Corresponding process flow diagram. DETAILED DESCRIPTION
[0025] The embodiments of the present invention are described in detail below with reference to the accompanying drawings.
[0026] It should be clear that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0027] In a first aspect, an embodiment of the present invention provides a method for manufacturing a substrate through hole, which can effectively reduce the requirements for process uniformity and greatly improve the processing yield.
[0028] Figure 1 A flow chart of a method for making a substrate through hole provided by an embodiment of the present invention, Figure 2 for Figure 1 The corresponding process flow diagram. Figure 1 and Figure 2 The method for manufacturing a substrate through hole provided by an embodiment of the present invention may include: S11, providing a substrate, wherein at least two first holes are formed on a first surface of the substrate, each of the first holes comprising a first insulating layer disposed on a bottom and a sidewall of the hole, and a first metal layer on the first insulating layer; In an embodiment of the present invention, the substrate may be any sheet or plate-like material that needs to be made into a through hole through a semiconductor processing process. The substrate is a material to be processed, and a substrate can be formed after the substrate is processed. The substrate through hole may refer to a through hole that passes through the substrate. The first hole may include a first insulating layer arranged on the bottom and side walls of the hole, and a first metal layer on the first insulating layer. The first insulating layer may include, for example, silicon oxide, silicon nitride, organic material, etc., and the first metal layer may include, for example, metal titanium, metal copper, etc. The first hole may be pre-formed on the first surface of the substrate. Specifically, in one example, a deep hole may be formed on the substrate by etching, and then a first insulating layer and a first metal layer may be arranged in the deep hole by chemical vapor deposition, physical deposition, electroplating, etc.
[0029] For example, in one embodiment of the present invention, the substrate is a silicon wafer, and deep holes with a certain aspect ratio can be etched based on a deep silicon etching process, and then silicon oxide is deposited by chemical vapor deposition or thermal oxidation, and then metal Ti / Cu (titanium / copper) is sputtered as a seed layer by physical deposition, and then Cu is electroplated to fill the deep holes with metal.
[0030] In an embodiment of the present invention, at least two first holes may be provided on the first surface of the substrate. The cross-sectional shape of the first hole is not limited, for example, it may be circular, square, etc.
[0031] Furthermore, the first hole may have a greater depth so that the first hole can be used to form a substrate through hole. In one embodiment of the present invention, the first hole may have a greater aspect ratio. For example, in one example, the aspect ratio of the first hole may be greater than a first threshold value. The first threshold value may be, for example, 10 or 20, that is, the depth of the first hole is 10 times or 20 times the width.
[0032] S12, grinding and thinning the substrate from a second surface of the substrate so that the first hole is exposed from the second surface of the substrate, wherein the second surface is a surface of the substrate opposite to the first surface; The first hole of the substrate is formed from the first surface of the substrate, and although the first hole has a certain depth, the depth is not enough for the first hole to penetrate the substrate to reach the second surface. To this end, in this step, the substrate can be ground and thinned from the second surface of the substrate so that the first hole is exposed from the second surface of the substrate.
[0033] After grinding and thinning, the thickness of the substrate retained can be determined according to the depth of the first hole. When the thickness of the substrate is much greater than the depth of the first hole, the substrate can be ground roughly to quickly thin the substrate and improve the grinding efficiency; when the thickness of the substrate is close to the depth of the first hole (for example, when the distance from the top of the first hole is 50 microns to 100 microns), the substrate can be ground more carefully to improve the grinding accuracy until the first hole is exposed from the second surface of the substrate.
[0034] It should be noted that, in this step, the exposure of the first hole from the second surface of the substrate can have a broader meaning, which can include the exposure of the first insulating layer of the first hole from the second surface of the substrate, and can also include the exposure of the first metal layer of the first hole from the second surface of the substrate. Therefore, the method for manufacturing a substrate through hole provided in an embodiment of the present invention has a relatively large tolerance for the accuracy and uniformity of grinding and thinning, as well as the depth of the first hole, and is therefore conducive to improving the processing yield.
[0035] In this step, the second surface of the substrate may be a surface opposite to the first surface. For example, in one example, the first surface may be the upper surface of the substrate, and the second surface may be the lower surface of the substrate. The physical properties of the first surface may be the same as the physical properties of the second surface, or may be different from the physical properties of the second surface. For example, the first surface may be a polished surface, and the second surface may be an unpolished surface, or both the first surface and the second surface may be polished surfaces. In one example, the first surface may be the front side of the substrate, and the second surface may be the back side of the substrate.
[0036] S13, providing a second insulating layer on the second surface of the substrate; After the substrate is ground and thinned, the cross section of the first hole can be exposed from the second surface of the substrate. Based on this, in this step, a second insulating layer can be further provided on the second surface of the substrate. In the embodiment of the present invention, the second insulating layer can completely cover the second surface of the substrate, that is, its coverage area can include both the area corresponding to the first hole and other areas except the first hole.
[0037] Optionally, in an embodiment of the present invention, the second insulating layer may be disposed on the second surface of the substrate in a variety of ways, for example, by physical deposition, chemical vapor deposition, epitaxial growth, coating, etc. The material of the second insulating layer may be the same as that of the first insulating layer, or may be different from that of the first insulating layer, which is not limited in the embodiment of the present invention.
[0038] S14, etching a region of the second insulating layer covering the first hole so that the first hole is exposed from the second insulating layer to form a substrate through hole.
[0039] In this step, the area in the second insulating layer covering the first hole can be etched away, that is, an opening is made in the second insulating layer for the first hole, so that the first hole can be exposed from the second insulating layer, thereby forming a substrate through hole. This step adopts an etching method to expose the first hole from the second insulating layer, rather than chemical mechanical polishing to expose the first hole from the second insulating layer, which reduces the process cost on the one hand, and can also avoid breakage caused by inconsistent thickness of the first hole exposed to the substrate during chemical mechanical polishing.
[0040] The method for manufacturing a substrate through hole provided in an embodiment of the present invention can provide a substrate, wherein at least two first holes are formed on the first surface of the substrate, each of the first holes includes a first insulating layer arranged on the bottom and side walls of the hole, and a first metal layer on the first insulating layer, the substrate is ground and thinned from the second surface of the substrate so that the first holes are exposed from the second surface of the substrate, a second insulating layer is arranged on the second surface of the substrate, and the area covering the first holes in the second insulating layer is etched so that the first holes are exposed from the second insulating layer to form a substrate through hole. That is to say, in the method for manufacturing a substrate through hole provided by an embodiment of the present invention, when the substrate is subjected to grinding and thinning operation, the first hole is directly exposed from the second surface of the substrate, and the first hole can be exposed from the second insulating layer by etching the second insulating layer subsequently. Compared with the prior art in which the first holes are exposed from the second surface of the substrate by dry etching after grinding and thinning, each first hole still maintains its original etching depth. In the method for manufacturing a substrate through hole provided by the present invention, on the one hand, since the second surface of the substrate remains flush after grinding and thinning, no matter whether the original depths of the first holes are consistent, the first holes after grinding are not completely exposed. The depth of each first hole can be kept consistent, thereby effectively eliminating the influence of inconsistent etching depth of each first hole. On the other hand, when the second insulating layer is etched to expose the first hole, the insulating layer material and the first metal layer material in the first hole have different sensitivities to the etchant and have a higher etching selectivity. Therefore, a certain degree of over-etching of the second insulating layer can be tolerated, thereby greatly reducing the uniformity requirements of the second insulating layer and the uniformity requirements of the second insulating layer etching process. Therefore, the method for manufacturing a substrate through hole provided in an embodiment of the present invention can effectively reduce the requirements for the uniformity of the processing technology and effectively improve the processing yield.
[0041] Specifically, in an embodiment of the present invention, a substrate may be provided first. The substrate may be made of various materials. For example, in one example, the substrate includes any one of the following: a silicon substrate, a glass substrate, and a ceramic substrate. A first hole is pre-set on the substrate. The first hole includes not only the hole itself, but also a first insulating layer and a first metal layer arranged at the bottom and sidewall of the hole. The top cross-section of the first hole may be equal to or different from the bottom cross-section. The sidewall of the first hole may be perpendicular to the bottom or may be inclined at an angle to the bottom. For example, in one example, the bottom cross-section of the first hole is larger than the top cross-section of the first hole, and the angle between the sidewall of the first hole and the bottom may be less than 90 degrees. In this way, since the top of the first hole is smaller, it can be used to connect chips with smaller metal bumps and smaller pitches. Since the bottom of the first hole is larger, it can be used to connect substrates with larger metal bumps and larger pitches.
[0042] After providing the substrate, the substrate can be ground and thinned from the second surface of the substrate, that is, the substrate can be thinned by grinding. In order to facilitate the grinding operation, in an embodiment of the present invention, before the substrate is ground and thinned from the second surface of the substrate, the first surface of the substrate can be bonded to a temporary carrier, so that not only can the temporary carrier provide support for the substrate, but also the first surface of the substrate can be protected from wear. The specific material of the temporary carrier is not limited, for example, it can be silicon, glass, resin and other materials. The temporary carrier and the substrate can be bonded and fixed by wax or bonding glue. After the processing is completed, the substrate can also be separated from the temporary carrier by heating and other methods.
[0043] In one embodiment, step S12 of grinding and thinning the substrate from the second surface of the substrate may include: physically grinding the substrate from the second surface of the substrate to expose the first hole from the second surface of the substrate; and chemically mechanically polishing the substrate from the second surface of the substrate after physical grinding to make the second surface flat. In one example, after chemical mechanical polishing, it can be visually inspected or observed through an electron microscope to see whether the flatness of the second surface meets the requirements.
[0044] During grinding and thinning, various materials on the second surface of the substrate can be ground into particles, and these particles can include the material of the substrate itself (such as silicon material), and can also include the material forming the first hole (such as the first insulating layer material and / or the first metal layer material). Based on this, in one embodiment of the present invention, after the substrate is ground and thinned from the second surface of the substrate, before the second insulating layer is set on the second surface of the substrate, the method for making a substrate through hole provided by the embodiment of the present invention can also include: cleaning the substrate to remove the grinding particles generated by grinding, and the grinding particles include metal particles. Exemplarily, in one embodiment, after grinding, dry etching can be used to etch the silicon surface to remove surface stress and copper ion contamination of particles generated by grinding, and then use Dupont (Dupont) EKC series (such as EKC6850, etc.) solution for cleaning. The main components of the EKC solution include hydroxylamine (HDA), ethanol (DGA), catechol (Catechol) and water. The EKC series solution has a corrosive effect on copper ions, can remove metal residues, and perform wet cleaning to remove copper ions.
[0045] After the substrate is ground and thinned from the second surface of the substrate, the first hole can be exposed from the second surface of the substrate. Further, on this basis, step S13 can be performed to set a second insulating layer on the second surface of the substrate so as to passivate and protect the second surface of the substrate. The specific material of the second insulating layer is not limited, and it can be either an inorganic material or an organic material. Depending on the specific material, the specific method of setting the second insulating layer can also be different. For example, in one embodiment of the present invention, setting the second insulating layer on the second surface of the substrate may include: forming the second insulating layer by sequentially depositing silicon dioxide and silicon nitride on the second surface of the substrate. In another embodiment, setting the second insulating layer on the second surface of the substrate may include: forming the second insulating layer by coating a preset organic material on the second surface of the substrate. Among them, the preset organic material may include, for example, polyimide, etc. The preset organic material can be coated on the second surface of the substrate in liquid form, and solidified on the second surface of the substrate by baking or ultraviolet exposure. In the embodiment of the present invention, the first hole is exposed by grinding and thinning, so the second surface is flat. In this way, when the second insulating layer is set, the stress of the second insulating layer at the first hole will be smaller, it will be less likely to crack, and it will adhere more firmly to the second surface.
[0046] Since there is no need to perform chemical mechanical polishing on the second insulating layer later, in the embodiment of the present invention, the second insulating layer can have a smaller thickness. For example, in one example, the thickness of the second insulating layer can be 1 micron to 2 microns. In the prior art, when the first hole is exposed by chemical mechanical polishing of the second insulating layer, the second insulating layer needs to be 3 microns to 4 microns. Since in the embodiment of the present invention, the second insulating layer can have a thinner thickness, the process temperature when depositing the second insulating layer can be effectively reduced, thereby effectively avoiding the decomposition of the bonding glue between the substrate and the temporary carrier.
[0047] After the second insulating layer is provided on the second surface of the substrate, the area covering the first hole in the second insulating layer can be etched in step S14 so that the first hole is exposed from the second insulating layer. Specifically, in one embodiment, etching the area covering the first hole in the second insulating layer so that the first hole is exposed from the second insulating layer can include: coating a photoresist on the second insulating layer; removing the photoresist in the area corresponding to the first hole by exposure and development to obtain a photolithography pattern layer; etching the second insulating layer using the photolithography pattern layer as a mask so that the first hole is exposed from the second insulating layer. When etching the second insulating layer using the photolithography pattern layer as a mask, both wet etching and dry etching can be used, and the embodiments of the present invention are not limited to this. Among them, when wet etching is used, an etching solution corresponding to the second insulating layer can be selected, such as a hydrofluoric acid solution, etc., and when dry etching is used, an ICP-RIE (Inductively coupled plasma-reaction ion etching) device can be used to etch the second insulating layer. In an example, etching the second insulating layer using the photolithography pattern layer as a mask may specifically include: using the photolithography pattern layer as a mask, dry-etching a region of the second insulating layer exposed by the photolithography pattern layer.
[0048] Furthermore, after etching the second insulating layer using the photolithography pattern layer as a mask, the method for making a substrate through hole provided by an embodiment of the present invention may also include: removing the photolithography pattern layer, or curing the photolithography pattern layer on the second insulating layer. Specifically, after etching the second insulating layer using the photolithography pattern layer as a mask, the photolithography pattern layer can be removed to expose the second insulating layer, or the photolithography pattern layer can be cured on the second insulating layer to form another passivation protective layer on the second insulating layer. In this case, since the photolithography pattern layer is an organic material, it has good elasticity and flexibility, and can also act as a buffer layer to play a buffering role.
[0049] Optionally, in the case where the second insulating layer is a preset organic material, the preset organic material may be a material that is not photosensitivity or a material that is photosensitivity. In the case where the preset organic material is not photosensitivity, a pattern may be etched into the preset organic material using a photoresist as a mask. In the case where the preset organic material is photosensitivity, a pattern may be formed by selectively exposing the preset organic material and developing it. For example, in one embodiment of the present invention, the preset organic material is photosensitive, and based on this, etching the area covering the first hole in the second insulating layer may specifically include: removing the area covering the first hole in the second insulating layer by exposing and developing the preset organic material.
[0050] Correspondingly, in a second aspect, an embodiment of the present invention further provides a method for manufacturing an intermediate layer, which can effectively reduce the requirements for process uniformity and greatly improve the processing yield.
[0051] Figure 3 A flow chart of a method for manufacturing an interposer provided in an embodiment of the present invention, Figure 4 for Figure 3 The corresponding process flow diagram. Figure 3 and Figure 4 The method for manufacturing the interposer provided by the embodiment of the present invention may include: S21, providing a first substrate, wherein at least two first holes are formed on a first surface of the first substrate, each of the first holes comprises a first insulating layer disposed on a bottom and a sidewall of the hole, and a first metal layer on the first insulating layer; S22, manufacturing a first metal bump on the first surface of the first substrate so that the first metal bump is coupled with the first hole to obtain a second substrate; S23, applying any one of the substrate through-hole manufacturing methods provided in the embodiments of the present invention to the second substrate, so that the first hole forms the substrate through-hole; S24, manufacturing a second metal bump on the second surface of the second substrate, so that the second metal bump is coupled to the substrate through hole.
[0052] The method for manufacturing an intermediate layer provided in an embodiment of the present invention uses the method for manufacturing a substrate through hole provided in an embodiment of the present invention to manufacture a through hole of the intermediate layer, and the two ends of the through hole are respectively coupled to the first metal bump and the second metal bump. Therefore, the corresponding beneficial technical effects can also be achieved. This has been described in detail in the previous article and will not be repeated here.
[0053] In an embodiment of the present invention, the first metal bump can be directly made on the first surface of the first substrate, or other layers can be first made on the first surface of the first substrate, and then the first metal bump can be made on the other layers. For example, in one embodiment of the present invention, step S22 makes the first metal bump on the first surface of the first substrate so that the first metal bump is coupled with the first hole, which can specifically include: making a first redistribution layer (not shown) on the first surface of the first substrate; making the first metal bump on the first redistribution layer, and the first metal bump is coupled with the first hole through the first redistribution layer.
[0054] In one example, the first surface of the first substrate can be used to bond the chip. Since the metal bumps and pitch of the chip itself are small, the first metal bumps themselves and the pitch can also be small. In one example, a layer of polyimide can be first provided as a passivation layer to buffer stress, and then a seed layer can be sputtered by physical deposition, and then a photoresist is used as a masking layer, and copper is deposited by electroplating to form the first metal bump. The first metal bump can include copper, nickel, and a tin-silver mixture, or copper, nickel, and gold in sequence from the first substrate to the direction away from the first substrate, and finally the photoresist is removed and the excess metal is wet-etched away.
[0055] Similarly, in the embodiments of the present invention, the second metal bump can be directly made on the second surface of the second substrate, or other layers can be first made on the second surface of the second substrate, and then the second metal bump can be made on the other layers. For example, in one embodiment of the present invention, step S24 of making the second metal bump on the second surface of the second substrate so that the second metal bump is coupled with the substrate through hole can specifically include: making a second redistribution layer (not shown) on the second surface of the second substrate; making the second metal bump on the second redistribution layer, and the second metal bump is coupled with the substrate through hole through the second redistribution layer.
[0056] The specific manufacturing process of the second metal bump is similar to that of the first metal bump, and will not be repeated here.
[0057] Correspondingly, in a third aspect, an embodiment of the present invention further provides a method for manufacturing a packaging structure, which can effectively reduce the requirements for process uniformity and greatly improve the processing yield.
[0058] Figure 5 A flow chart of a method for manufacturing a packaging structure provided by an embodiment of the present invention, Figure 6 for Figure 5 The corresponding process flow diagram. Figure 5 and Figure 6 The method for manufacturing the packaging structure provided by the embodiment of the present invention may include: S31, providing an interposer and a packaging substrate, wherein the interposer is manufactured based on any one of the interposer manufacturing methods provided in the embodiments of the present invention; S32, coupling the intermediary layer with the packaging substrate through the second metal bumps of the intermediary layer to obtain the packaging structure.
[0059] The method for manufacturing the packaging structure provided in the embodiment of the present invention uses the interposer manufactured by the method for manufacturing the interposer provided in the embodiment of the present invention, and therefore can also achieve corresponding beneficial technical effects, which have been described in detail above and will not be repeated here.
[0060] Correspondingly, in a fourth aspect, an embodiment of the present invention further provides a packaging method, which can effectively reduce the requirements for process uniformity and greatly improve the processing yield.
[0061] Figure 7 A flow chart of a packaging method provided by an embodiment of the present invention, Figure 8 for Figure 7 The corresponding process flow diagram. Figure 7 and Figure 8 , the packaging method provided by the embodiment of the present invention may include: S41, providing a chip to be packaged and a packaging structure, wherein the packaging structure is manufactured based on any one of the packaging structure manufacturing methods provided in the embodiments of the present invention; S42, coupling the chip to be packaged with the packaging structure through the first metal bump.
[0062] The packaging method provided by the embodiment of the present invention uses the packaging structure manufactured by the packaging structure manufacturing method provided by the embodiment of the present invention, and therefore can also achieve corresponding beneficial technical effects, which have been described in detail above and will not be repeated here.
[0063] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.
[0064] Each embodiment in this specification is described in a related manner, and the same or similar parts between the embodiments can be referenced to each other, and each embodiment focuses on the differences from other embodiments.
[0065] In particular, for the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.
[0066] For the convenience of description, the above device is described by dividing the functions into various units / modules. Of course, when implementing the present invention, the functions of each unit / module can be implemented in the same or multiple software and / or hardware.
[0067] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims
1. A method for manufacturing a substrate through hole, characterized in that: include: Providing a substrate, wherein at least two first holes are formed on a first surface of the substrate, each of the first holes comprises a first insulating layer disposed on a bottom and a sidewall of the hole, and a first metal layer on the first insulating layer; Grinding and thinning the substrate from a second surface of the substrate so that the first hole is exposed from the second surface of the substrate, wherein the second surface is a surface of the substrate opposite to the first surface; Disposing a second insulating layer on the second surface of the substrate; The region of the second insulating layer covering the first hole is etched to expose the first hole from the second insulating layer, thereby forming a substrate through hole.
2. The method according to claim 1, characterized in that The grinding and thinning of the substrate from the second surface of the substrate comprises: Physically grinding the substrate from the second surface of the substrate so that the first hole is exposed from the second surface of the substrate; The substrate is subjected to chemical mechanical polishing from the second surface of the substrate after physical grinding to make the second surface flat.
3. The method according to claim 1, characterized in that After grinding and thinning the substrate from the second surface of the substrate, and before providing a second insulating layer on the second surface of the substrate, the method further includes: The substrate is cleaned to remove abrasive particles generated by grinding, wherein the abrasive particles include metal particles.
4. The method according to claim 1, characterized in that: The step of providing a second insulating layer on the second surface of the substrate comprises: Forming the second insulating layer by sequentially depositing silicon dioxide and silicon nitride on the second surface of the substrate; or, The second insulating layer is formed by coating a predetermined organic material on the second surface of the substrate.
5. The method according to claim 4, characterized in that The preset organic material is photosensitive; The etching of the area of the second insulating layer covering the first hole comprises: The area of the second insulating layer covering the first hole is removed by exposing and developing the preset organic material.
6. The method according to claim 1, characterized in that The etching of the region of the second insulating layer covering the first hole so that the first hole is exposed from the second insulating layer comprises: coating a photoresist on the second insulating layer; Removing the photoresist in the area corresponding to the first hole by exposure and development to obtain a photolithography pattern layer; The second insulating layer is etched using the photolithography pattern layer as a mask to expose the first hole from the second insulating layer.
7. The method according to claim 6, characterized in that The etching of the second insulating layer using the photolithography pattern layer as a mask comprises: Using the photolithography pattern layer as a mask, dry etching is performed on the region of the second insulating layer exposed by the photolithography pattern layer.
8. The method according to claim 6, characterized in that After etching the second insulating layer using the photolithography pattern layer as a mask, the method further includes: The photolithography pattern layer is removed, or the photolithography pattern layer is cured on the second insulating layer.
9. The method according to claim 1, characterized in that: A bottom cross-section of the first hole is larger than a top cross-section of the first hole.
10. The method according to claim 1, characterized in that The thickness of the second insulating layer is 1 micrometer to 2 micrometers.
11. The method according to claim 1, characterized in that: The substrate includes any one of the following: a silicon substrate, a glass substrate, and a ceramic substrate.
12. A method for manufacturing an intermediate layer, characterized in that: include: Providing a first substrate, wherein at least two first holes are formed on a first surface of the first substrate, and each of the first holes comprises a first insulating layer disposed on a bottom and a sidewall of the hole, and a first metal layer on the first insulating layer; Making a first metal bump on the first surface of the first substrate so that the first metal bump is coupled with the first hole to obtain a second substrate; Applying the method for manufacturing a substrate through hole according to any one of claims 1 to 11 to the second substrate, so that the first hole forms the substrate through hole; A second metal bump is manufactured on the second surface of the second substrate so that the second metal bump is coupled with the substrate through hole.
13. The method according to claim 12, characterized in that The step of manufacturing a first metal bump on the first surface of the first substrate so that the first metal bump is coupled with the first hole comprises: Fabricating a first redistribution layer on the first surface of the first substrate; The first metal bump is manufactured on the first redistribution layer, and the first metal bump is coupled with the first hole through the first redistribution layer.
14. The method according to claim 12, characterized in that The step of manufacturing a second metal bump on the second surface of the second substrate so that the second metal bump is coupled with the substrate through hole comprises: Fabricating a second redistribution layer on the second surface of the second substrate; The second metal bump is manufactured on the second redistribution layer, and the second metal bump is coupled to the substrate through-hole through the second redistribution layer.
15. A method for manufacturing a packaging structure, characterized in that: include: Providing an interposer and a packaging substrate, wherein the interposer is manufactured based on the method for manufacturing an interposer according to any one of claims 12 to 14; The intermediary layer is coupled to the packaging substrate through the second metal bump of the intermediary layer to obtain the packaging structure.
16. A packaging method, characterized in that: include: Providing a chip to be packaged and a packaging structure, wherein the packaging structure is manufactured based on the method for manufacturing the packaging structure according to claim 15; The chip to be packaged is coupled to the packaging structure through the first metal bump.