SAR hotspot distribution regulation and control method and device and electronic equipment

Abstract

The invention provides a regulation and control method and device for SAR hotspot distribution and electronic equipment. The electronic equipment comprises a reference floor and an antenna assembly arranged along the reference ground edge of the reference floor, the antenna assembly comprises a radiator and a signal source, and the radiator comprises a main radiator and a parasitic radiator. The method comprises the steps that the intensity difference value of first resonance current on the main radiator and second resonance current on the parasitic radiator is adjusted so as to adjust floor current intensity distribution on the reference floor, SAR hot spot distribution of the antenna assembly is adjusted and controlled, and the SAR hot spot distribution is related to the first resonance current, the second resonance current and the floor current. According to the invention, the hot spot distribution of the electromagnetic wave specific absorption rate value can be regulated and controlled, and unnecessary power back-off is reduced.

Description

Technical Field

[0001] The present application relates to the field of communication technology, and in particular to a method, device and electronic equipment for controlling SAR hotspot distribution. Background Art

[0002] As the communication requirements on electronic devices such as mobile phones increase, the number of antennas required on electronic devices also increases. How to regulate the distribution of Specific Absorption Rate (SAR) hotspots on electronic devices and reduce unnecessary power back-off has become a technical problem that needs to be solved. Summary of the invention

[0003] The present application provides a method, device and electronic device for regulating the hot spot distribution of electromagnetic wave specific absorption rate values ​​and reducing unnecessary power back-off SAR hot spot distribution.

[0004] In a first aspect, the present application provides a method for controlling SAR hotspot distribution, which is applied to electronic equipment.

[0005] The electronic device comprises a reference floor and an antenna assembly arranged along the reference ground edge of the reference floor, the antenna assembly comprises a radiator and a signal source, the radiator comprises a main radiator and a parasitic radiator, the main radiator comprises a first grounding end, a feeding point and a first free end arranged in sequence, the parasitic radiator comprises a second free end and a second grounding end, the first free end is coupled with the second free end, and the first grounding end and the second grounding end are both electrically connected to the reference floor; the signal source is electrically connected to the feeding point, the signal source is used to excite the main radiator and the parasitic radiator to jointly generate a target resonance mode supporting a target frequency band, the direction of a first resonance current of the target resonance mode on the main radiator is the same as the direction of a second resonance current of the target resonance mode on the parasitic radiator, and the first resonance current and the second resonance current flow toward the reference floor to form a floor current; the method comprises:

[0006] The intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator is adjusted to adjust the floor current intensity distribution on the reference floor, so as to regulate the SAR hotspot distribution of the antenna assembly, wherein the SAR hotspot distribution is related to the first resonant current, the second resonant current and the floor current.

[0007] In a second aspect, the present application provides a SAR hotspot distribution control device, which is applied to an electronic device, wherein the electronic device includes a reference floor and an antenna assembly arranged along the reference ground edge of the reference floor, wherein the antenna assembly includes a radiator and a signal source.

[0008] The electronic device comprises a reference floor and an antenna assembly arranged along the reference ground edge of the reference floor, the antenna assembly comprises a radiator and a signal source, the radiator comprises a main radiator and a parasitic radiator, the main radiator comprises a first grounding end, a feeding point and a first free end arranged in sequence, the parasitic radiator comprises a second free end and a second grounding end, the first free end is coupled with the second free end, and the first grounding end and the second grounding end are both electrically connected to the reference floor; the signal source is electrically connected to the feeding point, the signal source is used to excite the main radiator and the parasitic radiator to jointly generate a target resonance mode supporting a target frequency band, the direction of a first resonance current of the target resonance mode on the main radiator is the same as the direction of a second resonance current of the target resonance mode on the parasitic radiator, and the first resonance current and the second resonance current flow toward the reference floor to form a floor current; the device comprises:

[0009] An adjustment module is used to adjust the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator to adjust the floor current intensity distribution on the reference floor, so as to regulate the SAR hotspot distribution of the antenna assembly, wherein the SAR hotspot distribution is related to the first resonant current, the second resonant current and the floor current.

[0010] In a third aspect, the present application provides an electronic device, including a memory and a processor, wherein the memory is used to store the described method, and the processor is used to execute the described method.

[0011] In a fourth aspect, the present application provides an electronic device, the electronic device comprising a reference floor, an antenna assembly, the antenna assembly being arranged along the reference ground edge of the reference floor, the antenna assembly comprising a radiator and a signal source, the radiator comprising a main radiator and a parasitic radiator, the main radiator comprising a first grounding end, a feeding point and a first free end arranged in sequence, the parasitic radiator comprising a second free end and a second grounding end, the first free end being coupled to the second free end, and the first grounding end and the second grounding end being electrically connected to the reference floor; the signal source being electrically connected to the feeding point, and the signal source being used to excite the main radiator and the The parasitic radiators jointly generate a target resonance mode supporting a target frequency band, the direction of a first resonance current of the target resonance mode on the main radiator is the same as the direction of a second resonance current of the target resonance mode on the parasitic radiator, the first resonance current and the second resonance current flow toward the reference floor to form a floor current; the intensity difference between the first resonance current and the second resonance current is configured as a second preset current intensity to reduce the Sar hotspot intensity of the target area of ​​the electronic device, wherein the Sar hotspot intensity of the target area of ​​the electronic device is related to the first resonance current, the second resonance current and the floor current.

[0012] The SAR hotspot distribution control method, device and electronic device provided in the present application adjust the floor current distribution on the reference floor by adjusting the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator, so as to control the SAR hotspot distribution of the antenna component, and then control the hotspot distribution of the electromagnetic wave specific absorption rate value on the electronic device, thereby reducing unnecessary power back-off. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments are briefly introduced below.

[0014] Figure 1 It is a structural schematic diagram of an electronic device provided in an embodiment of the present application;

[0015] Figure 2 It is a schematic diagram of the structural decomposition of an electronic device provided in an embodiment of the present application;

[0016] Figure 3 is a plan view of an antenna assembly provided by a first embodiment of the present application in an electronic device;

[0017] Figure 4 is a structural schematic diagram of an antenna assembly provided by a second embodiment of the present application;

[0018] Figure 5It is a flow chart of the first SAR hotspot distribution control method provided in the embodiment of the present application;

[0019] Figure 6 yes Figure 3 Schematic diagram of current distribution of the provided antenna assembly and reference floor;

[0020] Figure 7 This is a schematic diagram of SAR hotspot distribution of an antenna assembly provided by the first embodiment of the present application;

[0021] Figure 8 is a schematic diagram of magnetic field distribution of an antenna assembly provided in the first embodiment of the present application;

[0022] Fig. 9 is a structural schematic diagram of an antenna assembly provided by a third embodiment of the present application;

[0023] Fig.10 This is a schematic diagram of SAR hotspot distribution of an antenna assembly provided in a third embodiment of the present application;

[0024] Fig.11 is a schematic diagram of magnetic field distribution of an antenna assembly provided in a third embodiment of the present application;

[0025] Fig.12 is a schematic diagram of current distribution of an antenna assembly provided in a third embodiment of the present application;

[0026] Fig.13 It is a flow chart of a third SAR hotspot distribution control method provided in an embodiment of the present application;

[0027] Fig.14 This is a schematic diagram of SAR hotspot distribution of an antenna assembly provided in a second embodiment of the present application;

[0028] Fig.15 is a schematic diagram of magnetic field distribution of an antenna assembly provided in a second embodiment of the present application;

[0029] Fig.16 is a schematic diagram of current distribution of an antenna assembly provided in a second embodiment of the present application;

[0030] Fig.17 is a structural schematic diagram of an antenna assembly provided in a fourth embodiment of the present application;

[0031] Fig.18 is a schematic diagram of SAR hotspot distribution of an antenna assembly provided in a fourth embodiment of the present application;

[0032] Fig.19 is a schematic diagram of magnetic field distribution of an antenna assembly provided in a fourth embodiment of the present application;

[0033] Fig. 20 It is a flow chart of a first implementation method of a SAR hotspot distribution control method provided in an embodiment of the present application;

[0034] Fig.21 is a schematic diagram of current distribution of an antenna assembly provided in a fourth embodiment of the present application;

[0035] Fig. 22 is a SAR distribution diagram of the antenna assembly provided in the fourth embodiment of the present application in scenario (a);

[0036] Fig.23 It is a flow chart of a second implementation method of a SAR hotspot distribution control method provided in an embodiment of the present application;

[0037] Fig.24 is a SAR distribution diagram of the antenna assembly provided in the fourth embodiment of the present application in scenario (b);

[0038] Fig.25 is a SAR distribution diagram of the antenna assembly provided in the fourth embodiment of the present application in scenario (c);

[0039] Fig.26 It is a structural schematic diagram of a first tuning circuit and a second tuning circuit provided in an antenna assembly provided in a fourth embodiment of the present application;

[0040] Fig. 27 It is a structural schematic diagram of an antenna assembly provided with a matching circuit according to a fourth embodiment of the present application;

[0041] Fig.28 is a structural schematic diagram of an antenna assembly provided in a fifth embodiment of the present application;

[0042] Fig.29 is a structural schematic diagram of an antenna assembly provided in a sixth embodiment of the present application;

[0043] Fig.30 is a structural schematic diagram of an antenna assembly provided in a seventh embodiment of the present application;

[0044] Fig.31 is a schematic diagram of a device for controlling SAR hotspot distribution of an antenna assembly provided in an embodiment of the present application;

[0045] Fig.32 It is a structural block diagram of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0046] The technical solution of the present application will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the embodiments described in the present application are only a part of the embodiments, not all of the embodiments. Based on the embodiments provided in the present application, all other embodiments obtained by ordinary technicians in this field without creative work belong to the protection scope of the present application.

[0047] Reference to "embodiments" in this application means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it mutually exclusive, independent, or alternative to other embodiments. It can be explicitly and implicitly understood by those skilled in the art that the embodiments described in this application can be combined with other embodiments.

[0048] The terms "first", "second", etc. in the specification and claims of this application and the above-mentioned drawings are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example: a component or device including one or more parts is not limited to the one or more parts listed, but optionally includes one or more parts that are not listed but inherent to the exemplified product, or one or more parts that it should have based on the described function.

[0049] See also Figure 1 , Figure 1 The following is a schematic diagram of the structure of an electronic device 1000 provided in an embodiment of the present application. The electronic device 1000 includes but is not limited to a mobile phone, a wearable device, a virtual reality (VR) controller, a VR goggles, a VR helmet, and other devices with communication functions. The present embodiment of the present application is described by taking a mobile phone as an example, and other electronic devices can refer to this embodiment.

[0050] See also Figure 2 , the electronic device 1000 includes an antenna assembly 100.

[0051] See also Figure 2, taking the electronic device 1000 as a mobile phone as an example, the working environment of the antenna assembly 100 is illustrated. The electronic device 1000 includes a display screen 200, a middle frame 300 and a back cover 400 arranged in sequence along the thickness direction. Among them, the middle frame 300 includes a middle plate 310 and a frame 320 surrounding the side of the middle plate 310. Of course, in other embodiments, the electronic device 1000 may not have a middle plate 310. The display screen 200, the middle plate 310 and the back cover 400 are stacked in sequence, and a receiving space is formed between the display screen 200 and the middle plate 310, and between the middle plate 310 and the back cover 400 to accommodate components such as a main board, a camera module, a receiver module, a battery, and various sensors. One side of the frame 320 is surrounded by the edge of the display screen 200, and the other side of the frame 320 is surrounded by the edge of the back cover 400 to form a complete appearance structure of the electronic device 1000. In this embodiment, the frame 320 and the middle plate 310 are an integral structure, and the frame 320 and the back cover 400 may be separate structures. The above is the working environment of the antenna assembly 100 taking a mobile phone as an example, but the antenna assembly 100 of the present application is not limited to the above working environment.

[0052] See also Figure 3 , border 320( Figure 3 The frame formed by the dashed line and the solid line includes a top edge 321 and a bottom edge 322 that are arranged opposite to each other, and a pair of side edges 323 connected to the top edge 321 and the bottom edge 322. The top edge 321 is the side away from the ground when the user holds the electronic device 1000, and the bottom edge 322 is the side facing the ground when the user holds the electronic device 1000.

[0053] Electronic devices are often used in handheld scenarios or close to the human head. Therefore, detecting SAR hotspots and regulating the distribution of SAR hotspots have become technical issues that need to be solved.

[0054] See also Figure 3 The electronic device 1000 includes a reference floor 500 and an antenna assembly 100 arranged along a reference ground edge 510 of the reference floor 500. The antenna assembly 100 includes a radiator 10 and a signal source 20, and the radiator 10 is electrically connected to the signal source 20 and the reference floor 500. The ground end of the radiator 10 is electrically connected to the reference floor 500.

[0055] The radiator 10 is arranged along the reference ground edge 510 and spaced apart from the reference ground edge 510. Further, the radiator 10 may be arranged substantially parallel to the reference ground edge 510. The reference ground edge 510 in the present application includes but is not limited to at least one of the top edge, the bottom edge, and a pair of side edges mentioned above.

[0056] The signal source 20 is disposed on the main board of the electronic device 1000. The signal source 20 is electrically connected to a feeding point A on the radiator 10, and the feeding point A may be located at the end of the radiator 10, or between the two ends of the radiator 10. The present application does not specifically limit the type of the antenna assembly 100, and the antenna assembly 100 may include, but is not limited to, a monopole antenna, an IFA antenna, a PFA antenna, a T-type antenna, and the like.

[0057] The present application does not limit the frequency band supported by the antenna assembly 100. Optionally, the frequency band supported by the antenna assembly 100 is the LB band (less than 1 GHz), and the fourth frequency band includes but is not limited to at least one of the MHB band (1-3 GHz), the UHB band (greater than 3 GHz), and the Wi-Fi band.

[0058] The reference floor 500 is made of conductive material and can be disposed in the middle board 310 of the electronic device 1000 .

[0059] Optionally, the form of the radiator 10 includes but is not limited to a metal frame 320, a metal frame embedded in a plastic frame 320, a metal radiator 10 located in or on the frame 320, a flexible printed circuit board antenna formed on a flexible printed circuit board (FPC), a laser direct structured antenna by laser direct structure (LDS), a printed direct structured antenna by print direct structure (PDS), a conductive sheet antenna (such as a metal bracket antenna), etc. In this embodiment, the radiator 10 is taken as a part of a metal frame for description.

[0060] See also Figure 4, the radiator 10 also includes a main radiator 11 and a parasitic radiator 12. The main radiator 11 includes a first free end 111, a feeding point A and a first grounding end 112 arranged in sequence. The feeding point A is located between the first grounding end 112 and the first free end 111. The parasitic radiator 12 includes a second grounding end 121 and a second free end 122. The first grounding end 112 and the second grounding end 121 are both electrically connected to the reference floor 500. The first free end 111 and the second free end 122 are coupled via a gap. The signal source 20 is electrically connected to the feeding point A. The signal source 20 is used to excite the main radiator 11 and the parasitic radiator 12 to jointly generate a target resonance mode supporting a target frequency band, the direction of the first resonance current of the main radiator 11 in the target resonance mode is the same as the direction of the second resonance current of the parasitic radiator 12 in the target resonance mode, and the first resonance current and the second resonance current flow to the reference floor 500 to form at least part of the floor current. The intensity difference between the first resonant current and the second resonant current is a second preset current intensity to reduce the Sar hot spot intensity of the target area of ​​the electronic device 1000, wherein the Sar hot spot intensity of the target area of ​​the electronic device 1000 is related to the first resonant current, the second resonant current and the floor current. The target area includes but is not limited to the area where the subject to be tested is close.

[0061] The present application does not make any specific limitation on the difference in intensity between the first resonant current and the second resonant current. Optionally, the intensity of the first resonant current is greater than the intensity of the second resonant current, and the intensity difference between the intensity of the first resonant current and the intensity of the second resonant current is greater than or equal to a first preset current intensity. Optionally, the intensity difference between the intensity of the first resonant current and the intensity of the second resonant current is less than a first preset current intensity. Optionally, the intensity of the first resonant current is less than the intensity of the second resonant current, and the intensity difference between the intensity of the second resonant current and the first resonant current is greater than or equal to a first preset current intensity.

[0062] See also Figure 5 , Figure 5 The present application also provides a flow chart of a method for regulating SAR hotspot distribution. The method for regulating SAR hotspot distribution is applied to an electronic device 1000. The main radiator 11 and the parasitic radiator 12 form a resonant mode together, which can also be called an EE (electric field-electric field) radiation mode. The method includes but is not limited to the following steps.

[0063] Step S100: Adjust the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 to adjust the floor current intensity distribution on the reference floor 500, so as to regulate the SAR hotspot distribution of the antenna assembly 100, wherein the SAR hotspot distribution is related to the first resonant current, the second resonant current and the floor current.

[0064] For details, please refer to Figure 5 The direction of the first resonant current of the target resonant mode on the main radiator 11 is the same as the direction of the second resonant current of the target resonant mode on the parasitic radiator 12, and the first resonant current and the second resonant current flow toward the reference floor 500 to form at least part of the floor current. The floor current includes the distributed current flowing from the resonant current on the radiator 10 to the reference floor 500, and the mirror current generated by the radiator 10 on the reference floor 500.

[0065] Generally, the distributed current formed by the radiator 10 on the reference floor 500 flows in opposite directions along the reference ground edge 510 on the reference floor 500 from the ground end of the radiator 10. The direction of the resonant current on the radiator 10 is opposite to the direction of the current on the portion of the reference floor 500 directly facing the radiator 10, and thus the far-field energy of the resonant current on the radiator 10 is at least partially offset by the far-field energy of the floor current on the area of ​​the reference floor 500 directly facing the radiator 10. In this way, the floor current on the reference floor 500 and the resonant current on the radiator 10 are offset and coupled.

[0066] It can be understood that the SAR hotspot of the antenna assembly 100 is jointly affected by the far-field energy of the floor current on the reference floor 500 and the far-field energy of the resonant current on the radiator 10. Since the energy of the resonant current on the radiator 10 offsets the energy of the floor current on the reference floor 500 directly opposite to it, the floor current on the reference floor 500, after being offset and coupled with the resonant current on the radiator 10, makes a major contribution to the SAR hotspot of the antenna assembly 100.

[0067] The position of the SAR hotspot of the antenna assembly 100 corresponds to the position of a current strong area after the floor current on the reference floor 500 is offset and coupled with the resonant current on the radiator 10 .

[0068] Among them, the intensity of the SAR hotspot is the strongest at the hotspot center, and the intensity of the SAR hotspot gradually decreases from the center to the surrounding side.

[0069] When the floor current on the reference floor 500 is offset and coupled with the resonant current on the radiator 10, the current distribution along the reference ground edge 510 is a weak current area, a strong current area, and a weak current area. Then, a strong current area corresponds to a SAR hotspot.

[0070] In the following, the antenna component 100 is taken as an example of a monopole antenna, and the corresponding relationship between the SAR hotspot of the antenna component 100 and the current distribution after the floor current on the reference floor 500 is offset and coupled with the resonant current on the radiator 10 is illustrated by way of example.

[0071] See also Figure 3 , Figure 3 This is a schematic diagram of the structure of an antenna assembly 100 provided in the first embodiment of the present application. The working frequency band of the antenna assembly 100 is the N78 band (near 3.5G), and the antenna assembly 100 is arranged on the top side (top short side) of the mobile phone. Since the propagation wavelength in free space corresponding to the N78 band is approximately 80-90mm, the length of the short side of the mobile phone is close to a whole wavelength. Definition Figure 6 The first end of the reference ground edge 510 is A1, the ground end of the radiator 10 is B1, the free end of the radiator 10 is C1, and the second end of the reference ground edge 510 is D1. In this embodiment, the distance between the ground end B1 of the antenna assembly 100 and the first end A1 of the short side is close to one quarter of the short side.

[0072] See also Figure 6 , the resonant current on the main radiator 10 flows from the free end C1 to the ground end B1.

[0073] The floor current on the reference floor 500 includes a distributed current flowing from the ground terminal B1 of the radiator 10 to the reference floor 500 and an image current formed by the radiator 10 at a portion of the reference floor 500 directly facing the radiator 10 .

[0074] Among them, the distributed current flowing from the ground terminal B1 of the radiator 10 to the reference floor 500: with the ground terminal B1 of the antenna assembly 100 as the boundary, the left side of the ground terminal B1 is a quarter-wavelength current mode, and the right side of the ground terminal B1 is a three-quarter-wavelength current mode, or it can be said that there is a quarter-wavelength current mode on the left and right sides of the ground terminal B1. This is the first quarter-wave propagating outward generated by the antenna excitation, and the right side of the ground terminal B1 also has a half-wavelength lagging behind the quarter wave.

[0075] Figure 7: This is a schematic diagram of the SAR hotspot distribution of an antenna assembly 100 provided in the first embodiment of the present application. By measuring the body SAR distribution of the antenna assembly 100 at a distance of 5 mm, it can be seen that the antenna assembly 100 supporting the N78 frequency band in this embodiment generates two SAR hotspots on one side of the 80-90 mm reference floor 500. One of the stronger SAR hotspots is above the ground terminal of the antenna assembly 100, and the other weaker SAR hotspot is on the right side of the antenna assembly 100.

[0076] See also Figure 8 , Figure 8 1 is a schematic diagram of magnetic field distribution of an antenna assembly 100 provided in the first embodiment of the present application. It can be seen that the magnetic field distribution on the antenna assembly 100 at this time basically corresponds to the SAR hotspot distribution.

[0077] See also Figure 6 , Figure 6 The resonant current on the main radiator 10 in the figure flows from the free end C1 to the ground end B1, and generates a floor current of 1 / 4 wavelength mode flowing from the ground end B1 to the first end A1 of the reference ground edge 510, a floor current of 1 / 4 wavelength mode flowing from the ground end B1 to the midpoint of the reference ground edge 510, and a floor current of 1 / 2 wavelength mode from the midpoint of the reference ground edge 510 to the second end D1 of the reference ground edge 510 on the reference floor 500. Among them, the intensity of the floor current of 1 / 2 wavelength mode is smaller than the current of the two 1 / 4 wavelength modes on the left. In addition, the radiator 10 also forms a mirror current at the position of the reference floor 500 directly opposite to the radiator 10, and the direction of the mirror current is opposite to the direction of the resonant current on the radiator 10.

[0078] The current of the radiator 10 is opposite to the current on the reference floor 500 directly below the radiator 10. For example, the current of the radiator 10 is to the left, and the current on the reference floor 500 directly below the radiator 10 is to the right, and the magnetic fields of the two are offset. However, the current on the reference floor 500 between the first end A1 and the grounding end B1 of the radiator 10 is very strong and there is no offset current on the radiator 10. Therefore, the main SAR hotspot is located just above and slightly to the left of the grounding end B1, and the overall current intensity between the position on the reference floor 500 just below C1 and the second end D1 of the reference ground edge 510 is not strong, forming a second weaker SAR hotspot. This embodiment can illustrate that the SAR hotspot mainly comes from the contribution of the stronger current on the reference floor 500 that is not offset by the resonant current on the radiator 10.

[0079] See also Fig. 9 , Fig. 9It is a schematic diagram of the structure of an antenna assembly 100 provided in the second embodiment of the present application. Since the propagation wavelength in free space corresponding to the N78 frequency band is approximately 80-90 mm, the length of the short side of the mobile phone is close to a whole wavelength. The ground terminal B1 of the antenna assembly 100 is located at the center of the top edge 321. After the resonant current on the radiator 10 flows to the reference floor 500, a floor current of a half-wavelength mode is formed on the reference floor 500.

[0080] See also Fig.10 , Fig.10 This is a schematic diagram of the SAR hotspot distribution of an antenna assembly 100 provided in the second embodiment of the present application. Among them, the working frequency band of the antenna assembly 100 is the N78 band (near 3.5G), and the antenna assembly 100 is arranged at the top edge 321 (top short side) of the mobile phone. By measuring the body SAR distribution of the antenna assembly 100 at a distance of 5mm at this time, it can be seen that the antenna assembly 100 has two SAR hotspots. One of the stronger SAR hotspots is above the ground terminal B1 of the antenna assembly 100, and the other very weak SAR hotspot is on the right side of the antenna assembly 100. The difference between the embodiment of the present application and the first embodiment is that the ground terminal B1 of the monopole antenna in this embodiment is located near the center position of the top edge 321 of the mobile phone. By measuring the body SAR distribution of the antenna assembly 100 at a distance of 5mm at this time, it can be seen that the antenna assembly 100 supporting the N78 band in this embodiment generates two SAR hotspots on one side of the reference floor 500 of 80-90mm. A main SAR hotspot is above the free end C1 position of the radiator 10, and there is a very weak SAR hotspot on the right side, similar to the left side.

[0081] The SAR hotspot is traditionally considered to be mainly contributed by the radiator 10, where the current at the ground terminal B1 of the antenna assembly 100 is large and the magnetic field is large, so the SAR hotspot is above the ground terminal B1 of the antenna assembly 100. However, the present application proves through the first and second embodiments that the position of the SAR hotspot is not directly above the ground terminal B1 of the antenna assembly 100. In the second embodiment, one SAR hotspot is above the free end C1, and the other is to the right of the ground terminal B1.

[0082] See also Fig.11 , Fig.11 1 is a schematic diagram of magnetic field distribution of an antenna assembly 100 provided in the second embodiment of the present application. It can be seen that the magnetic field distribution on the antenna assembly 100 at this time basically corresponds to the SAR hotspot distribution.

[0083] See also Fig.12 , Fig.121 is a current distribution diagram of an antenna assembly 100 provided in the second embodiment of the present application. The direction of the resonant current on the main radiator 10 is rightward. The free end C1 of the main radiator 10 is located on the left side of the ground end B1.

[0084] The floor current on the reference floor 500 includes a distributed current flowing from the ground terminal B1 of the radiator 10 to the reference floor 500 and an image current formed by the radiator 10 at a portion of the reference floor 500 directly facing the radiator 10 .

[0085] Among them, the distributed current flowing from the ground terminal B1 of the radiator 10 to the reference floor 500: a strong half-wavelength current to the right is excited between the first end A1 and the ground terminal B1 of the reference ground edge 510 on the reference floor 500, and a weaker half-wavelength current is excited between the ground terminal B1 and the second end D1 of the reference ground edge 510 on the reference floor 500, forming the above-mentioned two SAR hotspots. Since the magnetic field of the resonant current of the main radiator 10 and the magnetic field of the current of the part of the reference floor 500 facing the radiator 10 are offset, the main SAR hotspot is near the center of the half-wavelength current on the left, and the half current on the right forms a weaker SAR hotspot.

[0086] The region where the SAR hotspot is generated in this embodiment is a region where the magnetic field of the strong current region on the reference floor 500 is not offset by the magnetic field of the resonant current on the radiator 10. The reason for generating the SAR hotspot is that the magnetic field of the strong current region on the reference floor 500 is not offset by the magnetic field of the resonant current on the radiator 10.

[0087] The floor current distribution on the reference floor 500 may be determined according to the length of the reference ground edge 510 of the reference floor 500 , the wavelength of the target frequency band, and the position of the ground terminal B1 of the radiator 10 relative to the reference floor 500 .

[0088] For example, the length of the reference ground edge 510 is close to the wavelength of the target frequency band. When the ground end B1 of the radiator 10 is close to the 1 / 4 position on the reference floor 500, current distributions of 1 / 4 wavelength mode, 1 / 4 wavelength mode and 1 / 2 wavelength mode are formed on the reference floor 500.

[0089] When the ground terminal B1 of the radiator 10 approaches the 1 / 2 position on the reference floor 500 , a 1 / 2 wavelength mode and a current distribution of the 1 / 2 wavelength mode are formed on the reference floor 500 .

[0090] Through the above analysis, it can be known that the reason for the above SAR hotspot is that the magnetic field of the strong current area on the reference floor 500 is not offset by the magnetic field of the resonant current on the radiator 10. In this step, by adjusting the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 to adjust the floor current intensity distribution on the reference floor 500, the current distribution of the floor current on the reference floor 500 after offsetting and coupling with the resonant current on the radiator 10 is adjusted, and then the SAR hotspot distribution of the antenna assembly 100 is adjusted.

[0091] Optionally, the electronic device 1000 further includes a proximity detector. The proximity detector is used to detect whether the subject to be detected is close to the antenna assembly 100.

[0092] Optionally, when the proximity detector detects that the subject to be measured is approaching, the SAR hotspot distribution of the antenna assembly 100 can be adjusted so that the strong point area of ​​the SAR hotspot is distributed in an area that is not close to the subject to be measured or is not held by the subject to be measured, and a weak SAR hotspot is set in the area close to the subject to be measured or no SAR hotspot is set to avoid unnecessary power back-off of the antenna assembly 100.

[0093] Optionally, when the proximity detector detects that the subject to be measured is approaching, the SAR hotspot distribution of the antenna assembly 100 can be adjusted to reduce the intensity of the SAR hotspot so that the SAR around the antenna assembly 100 is evenly distributed, thereby avoiding the intensity of some local SAR hotspots being greater than the intensity required by the power back-off, thereby avoiding unnecessary power back-off of the antenna assembly 100.

[0094] The SAR hotspot distribution control method, device and electronic device 1000 provided in the present application adjust the floor current intensity distribution on the reference floor 500 by adjusting the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12, so as to control the SAR hotspot distribution of the antenna assembly, and further control the hotspot distribution of the electromagnetic wave specific absorption rate value on the electronic device 1000, thereby reducing unnecessary power back-off.

[0095] For example, when the subject to be measured approaches, the electronic device 1000 adjusts the SAR hotspot of the area where the antenna assembly 100 is close to or in contact with the subject to be measured to reduce the power back-off.

[0096] For another example, the SAR hotspot distribution of the antenna assembly 100 may be balanced to avoid unnecessary power back-off caused by excessive intensity in certain areas.

[0097] See also Fig.13, step S100, adjusting the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 to adjust the floor current intensity distribution on the reference floor 500, so as to regulate the SAR hot spot distribution of the antenna assembly 100, wherein the Sar hot spot intensity of the target area of ​​the electronic device 1000 is related to the first resonant current, the second resonant current and the floor current. Before, the method further includes the following steps:

[0098] Step S200, detecting the SAR value within the target area of ​​the electronic device 1000;

[0099] Step S300: When the SAR value in the target area of ​​the electronic device 1000 is greater than the second preset SAR intensity, the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 is adjusted to adjust the floor current intensity distribution on the reference floor 500, so as to regulate the SAR hot spot distribution of the antenna assembly 100, so that the SAR value in the target area of ​​the electronic device 1000 is reduced to less than the second preset SAR intensity. The target area of ​​the electronic device 1000 is the area that the subject to be measured contacts or approaches. The present application does not make a specific limitation on the second preset SAR intensity. Optionally, the second preset SAR intensity should comply with general standards or specifications.

[0100] Optionally, the electronic device 1000 further includes a first detector for detecting the SAR value of the antenna assembly 100 and a second detector (the above-mentioned proximity detector) for detecting whether a subject to be detected approaches or contacts a target area of ​​the electronic device 1000. The target area of ​​the electronic device 1000 includes at least one of an area where the user holds the electronic device 1000 with his left hand, an area where the user holds the electronic device 1000 with his right hand, an area where the user holds the electronic device 1000 with both hands in landscape mode, an area where the user holds the electronic device 1000 with his left hand close to his head, an area where the user holds the electronic device 1000 with his right hand close to his head, etc.

[0101] The SAR value of the antenna assembly 100 within or near the target area of ​​the electronic device 1000 is detected by the first detector, and when the SAR value within the target area of ​​the electronic device 1000 is greater than the second preset SAR strength, the SAR value within the target area of ​​the electronic device 1000 is reduced to less than the second preset SAR strength to avoid power backoff, thereby ensuring the signal strength and signal quality of the antenna assembly 100.

[0102] Specifically, the floor current distribution on the reference floor 500 is affected by the distance between the ground end of the radiator 10 and the two ends of the reference ground edge 510 of the reference floor 500 , and the resonant current on the radiator 10 .

[0103] For details, please refer to Figure 6 and Fig.11 , the floor current on the reference floor 500 includes a first sub-current Q1, a second sub-current Q2 and a mirror current Q3. The first sub-current Q1 is distributed between the first end A1 of the reference ground edge 510 and the ground end of the radiator 10. The second sub-current Q2 is distributed between the second end D1 of the reference ground edge 510 and the ground end of the radiator 10. The first sub-current Q1 and the second sub-current Q2 are in opposite directions. The current mode of the first sub-current Q1 includes at least one of a 1 / 4 wavelength mode, a 1 / 2 wavelength mode, a 3 / 4 wavelength mode, and a 1-time wavelength mode. The current mode of the second sub-current Q2 includes at least one of a 1 / 4 wavelength mode, a 1 / 2 wavelength mode, a 3 / 4 wavelength mode, and a 1-time wavelength mode. The mirror current Q3 is in opposite direction to the resonant current on the radiator 10.

[0104] For example, see Figure 7 , the length of the reference ground edge 510 of the reference floor 500 is 4±1 / 8 times the electrical length of the radiator 10. In other words, the length of the reference ground edge 510 of the reference floor 500 is close to 1 wavelength of the target frequency band. The distance between the ground end of the radiator 10 and one end of the reference ground edge 510 of the reference floor 500 is 1 / 4 wavelength±1 / 8 wavelength of the target frequency band. In other words, the distance between the ground end of the radiator 10 and one end of the reference ground edge 510 is close to about 1 / 4 wavelength of the target frequency band. The distance between the ground end of the radiator 10 and the other end of the reference ground edge 510 is close to about 3 / 4 wavelength of the target frequency band.

[0105] The current mode of the first sub-current Q1 is a 1 / 4 wavelength mode, and the current mode of the second sub-current Q2 is a 3 / 4 wavelength mode.

[0106] Specifically, the distance between the ground end of the radiator 10 and the first end A1 of the reference ground edge 510 is close to 1 / 4 wavelength of the target frequency band. The distance between the ground end of the radiator 10 and the second end D1 of the reference ground edge 510 is close to 3 / 4 wavelength of the target frequency band. The free end of the radiator 10 faces the second end D1 of the reference ground edge 510. The resonant current on the radiator 10 flows from the free end to the ground end. The first sub-current Q1 flows from the ground end of the radiator 10 to the first end A1 of the reference ground edge 510. A portion of the second sub-current Q2 flows from the ground end of the radiator 10 to the vicinity of the center position of the reference ground edge 510, and the mode of this portion of the current is a 1 / 4 wavelength mode. Another portion of the second sub-current Q2 flows from the vicinity of the center position of the reference ground edge 510 to the second end D1 of the reference ground edge 510, and the mode of this portion of the current is a 1 / 2 wavelength mode.

[0107] The mirror current is located at a portion of the reference floor 500 facing the radiator 10 , and the direction of the mirror current is opposite to the direction of the resonant current on the radiator 10 .

[0108] Fig.12 The first sub-current Q1 is in 1 / 2 wavelength mode, and the second sub-current Q2 is in 1 / 2 wavelength mode.

[0109] In the present application, the current distribution after the floor current on the reference floor 500 is offset and coupled with the resonant current on the radiator 10 can be determined according to the floor current on the reference floor 500 and the resonant current on the radiator 10, and the intensity of the current distribution is positively correlated with the SAR hotspot intensity. In short, the number and position of the current strong points of the current distribution after the floor current on the reference floor 500 is offset and coupled with the resonant current on the radiator 10 correspond to the position and number of the SAR hotspots.

[0110] In this embodiment, the floor current distribution on the reference floor 500 is determined according to the distance between the ground end of the main radiator 11 and the two ends of the reference ground edge 510 of the reference floor 500, the distance between the ground end of the parasitic radiator 12 and the two ends of the reference ground edge 510 of the reference floor 500, the resonant current on the main radiator 11, and the resonant current on the parasitic radiator 12.

[0111] The present application does not specifically limit the grounding positions of the main radiator 11 and the parasitic radiator 12. In the following, in conjunction with the accompanying drawings, the main radiator 11 in the third embodiment is a monopole antenna, the frequency band supported by the main radiator 11 is N78, the total length of the reference ground edge 510 of the reference floor 500 is about 1 wavelength of the frequency band supported by the main radiator 11, the distance between the first grounding end 112 of the main radiator 11 and the first end A1 of the reference ground edge 510 of the reference floor 500 is about 1 / 4 of the total length of the reference ground edge 510, and the second grounding end 121 of the parasitic radiator 12 is located near the midpoint of the reference ground edge 510.

[0112] See also Figure 4, the first floor current of the main radiator 11 flowing into the reference floor 500 during resonance includes a first current N1, a second current N2 and a first mirror current N5. The first current N1 is distributed between the first end A1 of the reference ground edge 510 and the ground end of the main radiator 11. The second current N2 is distributed between the second end D1 of the reference ground edge 510 and the ground end of the main radiator 11. The first current N1 and the second current N2 are in opposite directions. The current mode of the first current N1 includes at least one of a 1 / 4 wavelength mode, a 1 / 2 wavelength mode, a 3 / 4 wavelength mode, and a 1-time wavelength mode. The current mode of the second current N2 includes at least one of a 1 / 4 wavelength mode, a 1 / 2 wavelength mode, a 3 / 4 wavelength mode, and a 1-time wavelength mode. The first mirror current N5 is in opposite directions to the resonant current on the main radiator 11.

[0113] See also Figure 4 , the second floor current of the parasitic radiator 12 flowing into the reference floor 500 during resonance includes a third current N3, a fourth current N4 and a second mirror current N6. The third current N3 is distributed between the first end A1 of the reference ground edge 510 and the ground end of the parasitic radiator 12. The fourth current N4 is distributed between the second end D1 of the reference ground edge 510 and the ground end of the parasitic radiator 12. The third current N3 is opposite in direction to the fourth current N4. The current mode of the third current N3 includes at least one of a 1 / 4 wavelength mode, a 1 / 2 wavelength mode, a 3 / 4 wavelength mode, and a 1-time wavelength mode. The current mode of the fourth current N4 includes at least one of a 1 / 4 wavelength mode, a 1 / 2 wavelength mode, a 3 / 4 wavelength mode, and a 1-time wavelength mode. The second mirror current N6 is opposite in direction to the resonant current on the parasitic radiator 12.

[0114] See also Figure 4In the electronic device 1000 provided in the present application, the first floor current of the main radiator 11 on the reference floor 500 includes a first current N1, a second current N2, and a first mirror current N5. The first current N1 and the second current N2 flow from the first ground terminal 112 along the reference ground edge 510 in opposite directions or converge to the first ground terminal 112 from two opposite directions, and the first mirror current N5 is located at the position of the reference floor 500 directly opposite to the main radiator 11, and the direction of the first mirror current N5 is opposite to the current direction on the main radiator 11. The second floor current of the parasitic radiator 12 on the reference floor 500 includes a third current N3, a fourth current N4, and a second mirror current N6. The third current N3 and the fourth current N4 converge to the second ground terminal 121 from two opposite directions or flow from the second ground terminal 121 to opposite directions along the reference ground edge 510. The portion of the third current N3 located on the side of the parasitic radiator 12 away from the main radiator 11 is opposite to the portion of the first current N1 located on the side of the parasitic radiator 12 away from the main radiator 11. The portion of the fourth current N4 located on the side of the main radiator 11 away from the parasitic radiator 12 is opposite to the portion of the second current N2 located on the side of the main radiator 11 away from the parasitic radiator 12. The second mirror current N6 is located at a position of the reference ground 500 directly opposite to the parasitic radiator 12, and the direction of the second mirror current N6 is opposite to the direction of the current on the parasitic radiator 12.

[0115] The magnetic field of the current on the reference floor 500 facing the main radiator 11 can offset the magnetic field of the first resonant current on the main radiator 11 to reduce the SAR hotspot distribution corresponding to the main radiator 11; the magnetic field of the current on the reference floor 500 facing the parasitic radiator 12 can offset the magnetic field of the second resonant current on the parasitic radiator 12 to reduce the SAR hotspot distribution corresponding to the parasitic radiator 12.

[0116] In an optional embodiment, by adjusting the resonant current distribution on the main radiator 11 and the parasitic radiator 12 in the target resonance mode, the first floor current and the second floor current on the side of the parasitic radiator 12 away from the main radiator 11 are in opposite directions, so that the energies of the first floor current and the second floor current on the side of the parasitic radiator 12 on the reference floor 500 away from the main radiator 11 cancel each other, thereby reducing the current intensity on the side of the parasitic radiator 12 on the reference floor 500 away from the main radiator 11, and reducing the SAR hotspot distribution on the side of the parasitic radiator 12 on the reference floor 500 away from the main radiator 11.

[0117] In another optional embodiment, by adjusting the resonant current distribution on the main radiator 11 and the parasitic radiator 12 in the target resonance mode, the first floor current and the second floor current on the side of the main radiator 11 away from the parasitic radiator 12 are in opposite directions, thereby making the energies of the first floor current and the second floor current on the side of the main radiator 11 away from the parasitic radiator 12 cancel each other, thereby reducing the current intensity on the side of the main radiator 11 on the reference floor 500 away from the parasitic radiator 12, and reducing the SAR hotspot distribution on the side of the main radiator 11 on the reference floor 500 away from the parasitic radiator 12.

[0118] One or both of the above two embodiments may be implemented to reduce the current intensity on the side of the main radiator 11 on the reference floor 500 facing away from the parasitic radiator 12 and the side of the parasitic radiator 12 on the reference floor 500 facing away from the main radiator 11, thereby reducing the SAR hotspot intensity on the side of the main radiator 11 facing away from the parasitic radiator 12 and the side of the parasitic radiator 12 on the reference floor 500 facing away from the main radiator 11.

[0119] The current distribution on the main radiator 11 and the parasitic radiator 12 is described below with reference to the accompanying drawings.

[0120] See also Fig.14 , Fig.14 5mm body SAR hot spot distribution diagram of the antenna assembly 100 provided in the third embodiment of the present application. Fig.15 As shown, it can be seen that a main SAR hotspot is in the left front of the first ground terminal 112 of the main radiator 11, and there is a very weak SAR hotspot on the right.

[0121] See also Fig.15 , Fig.15 1 is a schematic diagram of the magnetic field distribution of the antenna assembly 100 provided in the third embodiment of the present application. It can be seen that the magnetic field distribution on the antenna assembly 100 at this time basically corresponds to the SAR hotspot distribution.

[0122] See also Fig.16 , Fig.16: is a current distribution diagram of the antenna assembly 100 provided in the third embodiment of the present application. At this time, the floor current of the reference floor 500 includes the first floor current and the second floor current formed by the main radiator 11 on the reference floor 500. The first floor current includes the first current N1 and the second current N2 flowing from the first resonant current on the main radiator 11 to the reference floor 500, and the first mirror current N5 mirrored to the reference floor 500 by the main radiator 11. The first current N1 is in opposite directions to the second current N2. When the first resonant current flows from the first free end 111 to the first ground end 112, the first current N1 and the second current N2 flow from the first ground end 112 of the main radiator 11 along the reference ground edge 510 to the first end A1 and the second end D1 respectively. In this embodiment, the first current N1 is a 1 / 4 wavelength mode. The second current N2 includes a current in a 1 / 4 wavelength mode toward the left side located directly below the main radiator 11, a current in a 1 / 4 wavelength mode toward the left side located directly below the parasitic radiator 12, and a current in a 1 / 2 wavelength mode toward the left between the second ground terminal 121 of the parasitic radiator 12 and the second end D1 of the reference ground edge 510.

[0123] The first mirror current N5 mirrored by the main radiator 11 on the reference floor 500 is opposite in direction to the first resonant current on the main radiator 11 , and the first mirror current N5 is located on the reference floor 500 directly opposite to the main radiator 11 .

[0124] The second floor current includes a third current N3 formed by the second resonant current on the parasitic radiator 12 flowing to the reference floor 500 , a fourth current N4 , and a second mirror current N6 parasitically mirrored to the reference floor 500 .

[0125] When the second resonant current flows from the second ground terminal 121 to the second free terminal 122 , the third current N3 and the fourth current N4 flow from the second ground terminal 121 of the parasitic radiator 12 along the reference ground edge 510 to the first terminal A1 and the second terminal D1 , respectively.

[0126] The second mirror current N6 mirrored by the parasitic radiator 12 on the reference floor 500 is opposite in direction to the second resonant current on the parasitic radiator 12 , and the second mirror current N6 is located on the reference floor 500 directly opposite to the parasitic radiator 12 .

[0127] In this embodiment, the main radiator 11 generates an EE radiation mode, in which the first resonant current on the main radiator 11 is dominant, and the reference floor 500 directly below the main radiator 11 and the parasitic radiator 12 will couple to generate a current in the opposite direction (relative to the resonant current on the radiator 10), which partially offsets the magnetic field generated by the currents of the main radiator 11 and the parasitic radiator 12.

[0128] The first resonant current of the main radiator 11 flowing into the reference floor 500 will form a left-going quarter-wavelength current, forming an upper SAR hotspot, with the strongest point corresponding to the maximum point of the quarter current, and also forming a right-going current directly below the main radiator 11, which cancels out the magnetic field of the first resonant current on the main radiator 11. The second ground terminal 121 of the parasitic radiator 12 is near the center of the reference floor 500, forming a right-going half-wavelength current. Since the resonant current on the parasitic radiator 12 is weak, the SAR hotspot is weak.

[0129] It can be seen that the parasitic radiator 12 has a current cutoff function. When in EE mode, the current is mainly in the main radiator 11 section. At this time, the main current on the reference floor 500 is near the main radiator 11, and there is a tendency to cut off when it flows to the parasitic position.

[0130] In the following, in conjunction with the accompanying drawings, a fourth embodiment is described by taking as an example that the main radiator 11 is a monopole antenna, the frequency band supported by the main radiator 11 is N78, the total length of the reference ground edge 510 of the reference floor 500 is approximately 1 wavelength of the frequency band supported by the main radiator 11, the first ground end 112 of the main radiator 11 is located near the midpoint of the reference ground edge 510, and the distance between the second ground end 121 of the parasitic radiator 12 and the first end A1 of the reference ground edge 510 of the reference floor 500 is approximately 1 / 4 of the total length of the reference ground edge 510.

[0131] See also Fig.17 , Fig.17 1 is a schematic diagram of the structure of the antenna assembly 100 provided in the fourth embodiment of the present application. The grounding end of the main radiator 11 is electrically connected to the vicinity of the midpoint of the reference ground edge 510, and the distance between the grounding end of the parasitic radiator 12 and the first end A1 of the reference ground edge 510 is approximately 1 / 4 of the total length of the reference ground edge 510.

[0132] See also Fig.18 , Fig.18 5 mm body SAR hotspot distribution diagram of the antenna assembly 100 provided in the fourth embodiment of the present application. At this time, a main SAR hotspot is above the right side of the parasitic radiator 12, and another SAR hotspot on the left side is very weak.

[0133] See also Fig.19 , Fig.19 1 is a schematic diagram of the magnetic field distribution of the antenna assembly 100 provided in the fourth embodiment of the present application. It can be seen that the magnetic field distribution on the antenna assembly 100 at this time basically corresponds to the SAR hotspot distribution.

[0134] See also Fig.17 , Fig.17The current distribution of the antenna assembly 100 provided by the fourth embodiment is provided in. At this time, the floor current of the reference floor 500 includes a first floor current and a second floor current formed by the main radiator 11 on the reference floor 500. The first floor current includes a first current N1 and a second current N2 flowing from the first resonant current on the main radiator 11 to the reference floor 500, and a first mirror current N5 mirrored to the reference floor 500 by the main radiator 11. The first current N1 and the second current N2 are in opposite directions. When the first resonant current flows from the first ground terminal 112 to the first free end 111, the first current N1 and the second current N2 flow from the first end A1 and the second end D1 of the reference ground edge 510 to the first ground terminal 112 of the main radiator 11, respectively. In this embodiment, the first current N1 includes a current in a 1 / 4 wavelength mode from the first end A1 of the reference ground edge 510 to the second ground terminal 121 of the parasitic radiator 12, a current in a 1 / 4 wavelength mode to the right directly below the parasitic radiator 12, and a current in a 1 / 4 wavelength mode to the right directly below the main radiator 11. The second current N2 includes a current in a 1 / 2 wavelength mode to the left from the second end D1 of the reference ground edge 510 to the second ground terminal 121 of the main radiator 11.

[0135] The first mirror current N5 mirrored by the main radiator 11 on the reference floor 500 is opposite in direction to the first resonant current on the main radiator 11 , and the first mirror current N5 is located on the reference floor 500 directly opposite to the main radiator 11 .

[0136] The second floor current includes a third current N3 formed by the second resonant current on the parasitic radiator 12 flowing to the reference floor 500 , a fourth current N4 , and a second mirror current N6 parasitically mirrored to the reference floor 500 .

[0137] When the second resonant current flows from the second free end 122 to the second ground end 121 , the third current N3 and the fourth current N4 flow from the second ground end 121 of the parasitic radiator 12 along the reference ground edge 510 to the first end A1 and the second end D1 , respectively.

[0138] The second mirror current N6 mirrored by the parasitic radiator 12 on the reference floor 500 is opposite in direction to the second resonant current on the parasitic radiator 12 , and the second mirror current N6 is located on the reference floor 500 directly opposite to the parasitic radiator 12 .

[0139] In this embodiment, the main radiator 11 generates an mouth-to-mouth (EE) radiation mode, in which the resonant current on the main radiator 11 is dominant, and the reference floor 500 directly below the main radiator 11 and the parasitic radiator 12 will couple to generate a current in the opposite direction (relative to the resonant current on the main radiator 11 and the parasitic radiator 12), which partially offsets the magnetic field generated by the resonant current of the main radiator 11 and the parasitic radiator 12. The first resonant current of the main radiator 11 flows into the reference floor 500 to form a left-point half-wavelength current, forming an upper SAR hotspot, with the strongest point corresponding to the maximum point of half the current. A right-point current is also formed directly below the main radiator 11, and the magnetic field of the right-point current offsets the magnetic field of the current on the main radiator 11. The second ground terminal 121 of the parasitic radiator 12 is on the left side of the reference floor 500, forming a quarter-wavelength current to the left. Due to the current interception effect of the parasitic radiator 12, when in EE mode, the current is mainly in the main radiator 11 section, and the quarter current on the left side of the reference floor 500 is weaker. Therefore, the SAR hotspot of the parasitic radiator 12 away from the main radiator 11 is weaker.

[0140] See also Fig.17 , Fig.17 The current distribution of the antenna assembly 100 provided by the fourth embodiment is provided in FIG. It can be seen that at this time, the third current N3 on the reference floor 500 of the parasitic radiator 12 and the first current N1 on the reference floor 500 of the main radiator 11 still cancel each other on the left side of the reference floor 500, which can also illustrate the role of the parasitic radiator 12 in intercepting the current.

[0141] The above embodiments illustrate that after the parasitic radiator 12 is arranged on one side of the main radiator 11, the parasitic radiator 12 can cut off the current on the reference floor 500, that is, after the parasitic radiator 12 is arranged, the current on the side of the parasitic radiator 12 on the reference floor 500 away from the main radiator 11 is weakened, and then the SAR hotspot is weakened or even disappears. One reason is that the main radiator 11 and the parasitic radiator 12 form an EE (electric field-electric field) radiation mode. Among them, the current intensity is mainly concentrated on the main radiator 11, and the current intensity on the parasitic radiator 12 is weak, and the side of the parasitic radiator 12 on the reference floor 500 away from the main radiator 11 is also weak; another reason is that the first floor current and the second floor current on the side of the parasitic radiator 12 away from the main radiator 11 are opposite in direction, and can offset each other, thereby reducing the current intensity on the side of the parasitic radiator 12 away from the main radiator 11.

[0142] In this embodiment, by adjusting the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 in the target resonant mode, the intensity difference between the first floor current and the second floor current can be changed, thereby changing the current distribution intensity on the reference floor 500 after the resonant current on the radiator 10 is offset, and then adjusting the intensity distribution of the at least one SAR hotspot to change the SAR hotspot distribution of the antenna assembly 100. When the subject to be measured approaches, the electronic device 1000 adjusts the SAR hotspot of the area where the antenna assembly 100 is close to or in contact with the subject to be measured to reduce power fallback.

[0143] Step S100, adjusting the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 to adjust the floor current intensity distribution on the reference floor 500 to regulate the SAR hotspot distribution of the antenna assembly 100, includes:

[0144] In a first alternative implementation, see Fig. 20 , step S110, adjusting the intensity of the first resonant current to be greater than the intensity of the second resonant current, and the intensity difference between the first resonant current and the second resonant current to be greater than or equal to a first preset current intensity, so that the antenna assembly forms a first SAR hotspot and a second SAR hotspot, the first SAR hotspot is located on the side of the main radiator 11 facing the parasitic radiator 12, and the second SAR hotspot is located on the side of the main radiator 11 away from the parasitic radiator 12. The difference between the intensity of the first SAR hotspot and the intensity of the second SAR hotspot is greater than or equal to the first preset SAR intensity.

[0145] The present application does not make any specific limitation on the first preset current intensity, which can be reflected from the SRA hotspot distribution. The first preset current intensity forms two SAR hotspots on both sides of the main radiator 11, and the two SAR hotspots are obviously distributed in a manner that one is stronger and the other is weaker.

[0146] When the length of the reference ground edge 510 of the reference floor 500 is 4±1 / 8 times the electrical length of the radiator 10. When the distance between the first ground terminal 112 and one end of the reference ground edge 510 of the reference floor 500 is 1 / 4 wavelength±1 / 8 wavelength of the target frequency band, the intensity of the second SAR hotspot is greater than the intensity of the first SAR hotspot. The target area is located on the side of the main radiator 11 facing the parasitic radiator 12.

[0147] When the length of the reference ground edge 510 of the reference floor 500 is 4±1 / 8 times the electrical length of the radiator 10. When the distance between the first ground terminal 112 and the center position of the reference ground edge 510 of the reference floor 500 is less than or equal to 1 / 8 wavelength of the target frequency band, the intensity of the first SAR hotspot is greater than the intensity of the second SAR hotspot. The target area is located on the side of the main radiator 11 away from the parasitic radiator 12.

[0148] See also Fig.21 Taking the fourth embodiment as an example, assuming that the main radiator 11 is still located near the center of the reference ground edge 510, the first resonant current on the main radiator 11 is J1, and the ground currents thereunder are recorded as J1L and J1R according to the flow directions to the left and right, respectively. It is easy to know that the strengths of J1L and J1R are proportional to J1. The current generated by the J1 mirror image on the reference floor 500 is J1mirror. Similarly, the second resonant current on the parasitic radiator 12 is recorded as J2, and the ground currents thereunder are recorded as J2L and J2R according to the flow directions to the left and right, respectively. The strengths of J2L and J2R are proportional to J2, and the current generated by the J1 mirror image on the reference floor 500 is J2mirror. The current diagram is as shown in the figure. Fig. 22 shown.

[0149] See also Fig. 22 , Fig. 22 This is a SAR distribution diagram of the antenna assembly provided in the fourth embodiment of the present application in scenario (a).

[0150] J1 and J2 on the radiator 10 are in opposite directions to J1R, J2R, J1mirror, and J2mirror below, so the magnetic field above the radiator 10 is offset and no SAR hotspot is generated. J1L will form a SAR hotspot. For J1R and J2L, if the current J1 on the main radiator 11 is much greater than the current J2 on the parasitic radiator 12, the intensity of J1R is much greater than that of J2L, and a SAR hotspot located above the ground terminal of the parasitic radiator 12 is formed at this time. Since the distance between the J1R section and the reference floor 500 is short, the current distribution at this time is concentrated and may even be higher than that of the J1L section. Therefore, the main SAR hotspot can be formed above the ground terminal of the parasitic radiator 12, and a weaker SAR hotspot distribution is formed above the right reference floor 500. That is, at least the first SAR hotspot is formed on the side of the main radiator 11 facing the parasitic radiator 12. At least the second SAR hotspot is formed on the side of the main radiator 11 away from the parasitic radiator 12. A difference between the intensity of the first SAR hotspot and the intensity of the second SAR hotspot is greater than or equal to a first preset SAR intensity.

[0151] The present application does not make any specific limitation on the first preset SAR intensity. Optionally, the first preset SAR intensity is used as a boundary to illustrate that two SAR hot spots are obviously distributed in a manner that one is stronger and the other is weaker.

[0152] In a second optional implementation, step S120, see Fig.23 , adjusting the difference between the intensity of the first resonant current and the intensity of the second resonant current to be less than the first preset current intensity. The SAR hotspot of the antenna assembly 100 is located on the side of the main radiator 11 away from the parasitic radiator 12. The number of SAR hotspots of the antenna assembly 100 includes one or more. The target area is located on the side of the main radiator 11 facing the parasitic radiator 12.

[0153] In this embodiment, the first preset current strength is not specifically limited. The first preset current strength is set to illustrate that the strength of the first resonant current is slightly different from the strength of the second resonant current. The strength of the first resonant current is slightly different from the strength of the second resonant current, including that the strength of the first resonant current is substantially the same as or identical to the strength of the second resonant current.

[0154] See also Fig.24 , Fig.24 This is the SAR distribution diagram of the antenna assembly provided by the fourth embodiment of the present application in the (b) scenario. Taking the fourth embodiment as an example, the resonant current intensities on the main radiator 11 and the parasitic radiator 12 are basically similar, the J1R intensity is basically the same as the J2L intensity, the current on the left side of the parasitic radiator 12 on the reference floor 500 is basically offset, and the SAR hotspot in this area disappears. At this time, a relatively strong and unique SAR hotspot distribution is formed above the right reference floor 500.

[0155] In a third optional implementation, the intensity of the first resonant current is adjusted to be smaller than the intensity of the second resonant current, and the intensity difference between the intensity of the second resonant current and the first resonant current is greater than or equal to the first preset current intensity, so that the antenna assembly 100 forms a first SAR hotspot and a second SAR hotspot, and the first SAR hotspot is located on the side of the main radiator 11 facing the parasitic radiator 12. The second SAR hotspot is located on the side of the main radiator 11 away from the parasitic radiator 12. The difference between the intensity of the first SAR hotspot and the intensity of the second SAR hotspot is less than the first preset SAR intensity. The target area is located on the side of the main radiator 11 facing the parasitic radiator 12.

[0156] When the length of the reference ground edge 510 of the reference floor 500 is close to 4±1 / 8 times the electrical length of the radiator 10, and the distance between the first ground terminal 112 and one end of the reference ground edge 510 of the reference floor 500 is 1 / 4 wavelength±1 / 8 wavelength of the target frequency band, the intensity of the second SAR hotspot is greater than the intensity of the first SAR hotspot.

[0157] When the length of the reference ground edge 510 of the reference floor 500 is 4±1 / 8 times the electrical length of the radiator 10, and the distance between the ground end of the radiator 10 and the center position of the reference ground edge 510 of the reference floor 500 is less than or equal to 1 / 8 wavelength of the target frequency band, the intensity of the first SAR hotspot is less than the intensity of the second SAR hotspot.

[0158] See also Fig.25 , Fig.25 It is the SAR distribution diagram of the antenna assembly provided in the fourth embodiment of the present application in the (c) scenario. In this embodiment, the first resonant current J1 on the main radiator 11 is less than the second resonant current J2 on the parasitic radiator 12. Among them, the intensity of J1R is less than the intensity of J2L. At this time, there are still two SAR hotspots, one is located above the ground terminal of the parasitic radiator 12, and the other is located above the reference floor 500 on the right side of the main radiator 11. At this time, the strength of the SAR hotspot on the left depends on the strength difference between J1R and J2L. That is, at this time, by adjusting the current distribution ratio of the main radiator 11 and the parasitic radiator 12, the strength and distribution of the SAR hotspot can be flexibly controlled.

[0159] In this embodiment, the intensities of the two SAR hot spots generated by the main radiator 11 and the parasitic radiator 12 are relatively uniform, that is, this embodiment can balance the intensity distribution of the antenna assembly 100 .

[0160] In the present application, by designing the ground terminal of the main radiator 11 to be located near the center of the reference ground edge 510, and by changing the current difference between the main radiator 11 and the parasitic radiator 12, the SAR hotspot distribution can be regulated. The 5mm body SAR values ​​of the (a), (b), and (c) scenes are 2.59W / kg, 2.3W / kg, and 2.18W / kg, respectively. Compared with the (a) and (b) scenes, it is obvious that the resonant current on the main radiator 11 in the (c) scene is smaller than the resonant current on the parasitic radiator 12, and the SAR hotspot distribution is more uniform. The present application achieves a balanced SAR hotspot distribution by changing the current difference between the main radiator 11 and the parasitic radiator 12, thereby achieving the purpose of reducing SAR. In actual simulations, by balancing the SAR hotspot distribution, the same antenna assembly 100 can reduce SAR by 15% in the same environment.

[0161] The present application does not limit the specific means for determining the difference between the intensity of the first resonant current and the intensity of the second resonant current.

[0162] In the first implementation, see Fig.26 , the antenna assembly 100 further includes a first tuning circuit T1 and a second tuning circuit T2. The main radiator 11 is electrically connected to the reference floor 500 through the first tuning circuit T1. Specifically, the first ground terminal 112 of the main radiator 11 is electrically connected to the reference floor 500 through the first tuning circuit T1. The second ground terminal 121 of the parasitic radiator 12 is electrically connected to the reference floor 500 through the second tuning circuit T2. The first tuning circuit is used to adjust the electrical length of the main radiator, and the second tuning circuit is used to adjust the electrical length of the parasitic radiator, so that the intensity difference between the first resonant current and the second resonant current is a second preset current intensity.

[0163] Step S100, adjusting the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 to adjust the floor current intensity distribution on the reference floor 500 to regulate the SAR hotspot distribution of the antenna assembly 100, includes:

[0164] The difference between the electrical length of the main radiator 11 adjusted by the first tuning circuit T1 and the electrical length of the parasitic radiator 12 adjusted by the second tuning circuit T2 is adjusted to adjust the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 .

[0165] Optionally, the first tuning circuit T1 is a circuit with adjustable impedance.

[0166] Optionally, the first tuning circuit T1 includes an antenna switch and / or an adjustable capacitor.

[0167] See also Fig.26 Optionally, the first tuning circuit T1 further includes a first switch unit K1 and a plurality of first tuning branches T12. One end of each of the plurality of first tuning branches T12 is electrically connected to one end of the first switch unit K1, and the other end of the first switch unit K1 is electrically connected to the first ground terminal 112. That is, the first switch unit K1 includes but is not limited to a transistor, a field effect transistor, etc. The other ends of each of the plurality of first tuning branches T12 are grounded.

[0168] The impedance value of each first tuning branch T12 is different. For example, the plurality of first tuning branches T12 are a plurality of capacitors with different capacitance values. Alternatively, the plurality of first tuning branches T12 are a plurality of inductors with different inductance values. Alternatively, the plurality of first tuning branches T12 include a plurality of capacitors with different capacitance values ​​and a plurality of inductors with different inductance values. The impedance of the first tuning circuit T1 is adjusted by adjusting the first switch unit K1 to be electrically connected to different first tuning branches T12.

[0169] Of course, in other implementations, the first tuning circuit T1 may also be an adjustable capacitor.

[0170] The electronic device 1000 further includes a controller (not shown). The controller is electrically connected to the first switch unit K1. The controller controls the first switch unit K1 to switch to adjust the impedance value of the first tuning circuit T1, thereby adjusting the electrical length of the main radiator 11, thereby adjusting the current intensity of the resonant current on the main radiator 11, and thereby adjusting the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12.

[0171] Likewise, see Fig.26 The second tuning circuit T2 may include a second switch unit K2 and a plurality of second tuning branches T12, and the second tuning branch T12 refers to the first tuning branch T11. The connection and coordination relationship between the second switch unit K2 and the plurality of second tuning branches T12 may refer to the connection and coordination relationship between the first switch unit K1 and the plurality of first tuning branches T12, and may also be an adjustable capacitor to adjust the impedance of the second tuning circuit T2.

[0172] The controller is electrically connected to the second switch unit K2. The controller controls the second switch unit K2 to switch to adjust the impedance value of the second tuning circuit T2, thereby adjusting the electrical length of the parasitic radiator 12, thereby adjusting the current intensity of the resonant current on the parasitic radiator 12, and thereby adjusting the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12.

[0173] By adjusting the impedance of the first tuning circuit T1 to decrease, the current tends to be concentrated on the main radiator 11, and the first resonant current of the main radiator 11 increases.

[0174] By adjusting the impedance of the second tuning circuit T2 to decrease, the current tends to be concentrated on the parasitic radiator 12, and the second resonant current of the parasitic radiator 12 increases.

[0175] Optionally, in the electronic device 1000 provided in the present application, the controller is used to control the impedance value of the second tuning circuit T2 to be smaller than the impedance value of the second tuning circuit T2, so that the current on the radiator 10 is more concentrated on the parasitic radiator 12, thereby achieving that the intensity of the second resonant current is greater than the intensity of the first resonant current, and the two SAR hotspots generated by the main radiator 11 and the parasitic radiator 12 have relatively uniform intensities, balance the intensity distribution of the antenna assembly 100, avoid excessive local SAR intensity, and generate unnecessary power backoff of the antenna assembly 100.

[0176] The step of adjusting the difference between the electrical length of the main radiator 11 by the first tuning circuit T1 and the electrical length of the parasitic radiator 12 by the second tuning circuit T2 to adjust the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 comprises:

[0177] The electrical length of the main radiator 11 is adjusted by the first tuning circuit T1 to be smaller than the electrical length of the parasitic radiator 12 adjusted by the second tuning circuit T2, so that the intensity of the first resonant current is smaller than the intensity of the second resonant current, and the intensity difference between the intensity of the second resonant current and the first resonant current is greater than or equal to the first preset current intensity, so that at least a first SAR hotspot is formed on the side of the main radiator 11 facing the parasitic radiator 12, and at least a second SAR hotspot is formed on the side of the main radiator 11 away from the parasitic radiator 12, and the difference between the intensity of the first SAR hotspot and the intensity of the second SAR hotspot is less than the first preset SAR intensity, so as to improve the balance of SAR hotspot distribution.

[0178] When the electrical length of the main radiator 11 is greater than the electrical length of the parasitic radiator 12 , the magnitude of the first resonant current on the main radiator 11 is greater than the magnitude of the second resonant current on the parasitic radiator 12 .

[0179] When the electrical length of the main radiator 11 is smaller than the electrical length of the parasitic radiator 12 , the magnitude of the first resonant current on the main radiator 11 is smaller than the magnitude of the second resonant current on the parasitic radiator 12 .

[0180] Optionally, the electrical length of the parasitic radiator 12 is greater than the electrical length of the main radiator 11, the intensity of the second resonant current is greater than the intensity of the first resonant current, and the intensities of the two SAR hotspots generated by the main radiator 11 and the parasitic radiator 12 are relatively uniform, thereby balancing the intensity distribution of the antenna component 100 and avoiding excessive local SAR intensity, which causes unnecessary power backoff of the antenna component 100.

[0181] When the electrical length of the main radiator 11 is close to the electrical length of the parasitic radiator 12 , the magnitude of the first resonant current on the main radiator 11 is close to the magnitude of the second resonant current on the parasitic radiator 12 .

[0182] In the second implementation, see Fig. 27 , the antenna assembly 100 further includes a matching circuit M. The matching circuit M is electrically connected between the signal source 20 and the feeding point A. The matching circuit M is used to adjust the difference between the resonant frequency of the target resonant mode and the target center frequency to a preset frequency difference, and the resonant frequency of the target resonant mode is located within the effective frequency band of the target center frequency, and the target center frequency is the frequency corresponding to 1 / 4 wavelength of the main radiator, so that the intensity difference between the first resonant current and the second resonant current is a second preset current intensity.

[0183] Furthermore, the matching circuit M includes a switch unit and a plurality of matching branches, wherein the matching branches are grounded inductance elements, capacitance elements, etc., and each matching branch has a different impedance value. The controller controls the switch unit to switch to different matching branches to adjust the resonant frequency of the target resonant mode. The controller is used to control the matching circuit M to adjust the resonant frequency of the target resonant mode.

[0184] The adjusting the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 to adjust the floor current intensity distribution on the reference floor 500 to control the SAR hotspot distribution of the antenna assembly 100 includes:

[0185] The difference between the resonant frequency of the target resonant mode and the target center frequency is adjusted by the matching circuit M, and the resonant frequency of the target resonant mode is located within the effective frequency band of the target center frequency, and the target center frequency is the frequency corresponding to 1 / 4 wavelength of the main radiator 11.

[0186] The resonant frequency of the target resonant mode is adjusted to be located at the high frequency side of the target center frequency through the matching circuit M, so that the intensity of the first resonant current is less than the intensity of the second resonant current, and the intensity difference between the intensity of the second resonant current and the first resonant current is greater than or equal to the first preset current intensity, so that at least a first SAR hotspot is formed on the side of the main radiator 11 facing the parasitic radiator 12, and at least a second SAR hotspot is formed on the side of the main radiator 11 away from the parasitic radiator 12, the difference between the intensity of the first SAR hotspot and the intensity of the second SAR hotspot is less than the first preset SAR intensity, the intensities of the two SAR hotspots generated by the main radiator 11 and the parasitic radiator 12 are relatively uniform, and the intensity distribution of the antenna assembly 100 is balanced, so as to avoid excessive local SAR intensity and unnecessary power backoff of the antenna assembly 100.

[0187] In the EE radiation mode, the resonant frequency of the target resonant mode is located on the low-frequency side of the target center frequency or the target center frequency, the intensity of the first resonant current is greater than the intensity of the second resonant current, and the intensities of the two SAR hotspots generated by the main radiator 11 and the parasitic radiator 12 are biased toward the side where the parasitic radiator 12 is located.

[0188] The main radiator 11 is a monopole antenna, and the antenna assembly 100 is a first monopole antenna 14 + a first parasitic radiator 13. The inventive concept of the present application can also be extended to other antenna structures. In other embodiments, please refer to Fig.28 and Fig.29 , the main radiator 11 can also be an IFA antenna, that is, the antenna assembly 100 is a first IFA antenna 15 + a second parasitic radiator 16. In other embodiments, please refer to Fig.30 The antenna assembly 100 may also be a second IFA antenna 17 + a third IFA antenna 18, etc. The EE radiation pattern formed on the main radiator and the parasitic radiator, and the current distribution on the reference floor 500 may refer to the relevant description of the above embodiment.

[0189] In this application, the N78 frequency band supported by the main radiator 11 is only an example. It can also be the B41 frequency band, MHB, UHB, WIFI 2.4G and any other frequency band that needs to reduce SAR can adopt the method of balancing SAR hotspots or adjusting SAR hotspot distribution.

[0190] The present application provides a method for regulating the SAR hotspot distribution, which not only concludes that the SAR hotspot mainly comes from the contribution of the stronger current on the reference floor 500 that is not offset by the resonant current on the radiator 10; it also concludes that the parasitic radiator 12 has a current interception effect. When the EE mode current is mainly in the main radiator 11, the main current on the reference floor 500 is near the main radiator 11, and has a tendency to be cut off when flowing to the parasitic position; by allocating the current proportions of the main radiator 11 and the parasitic radiator 12, the SAR hotspot distribution intensity can be regulated.

[0191] See also Fig.31 , combined with Figure 1-Figure 30 The present application also provides a SAR hotspot distribution control device 600, which is applied to an electronic device 1000. The electronic device 1000 includes a reference floor 500 and an antenna assembly 100 arranged along a reference ground edge 510 of the reference floor 500. The antenna assembly 100 includes a radiator 10 and a signal source 20. The radiator 10 is electrically connected to the signal source 20 and the reference floor 500. The radiator 10 includes a main radiator 11 and a parasitic radiator 12. The main radiator 11 is electrically connected to the signal source 20. One end of the parasitic radiator 12 is coupled to the main radiator 11, and the other end of the parasitic radiator 12 is electrically connected to the reference floor 500. The signal source 20 of the antenna assembly 100 excites the main radiator 11 and the parasitic radiator 12 to jointly generate a target resonance mode supporting a target frequency band. The direction of the first resonance current of the target resonance mode on the main radiator 11 is the same as the direction of the second resonance current of the target resonance mode on the parasitic radiator 12.

[0192] The device includes an adjustment module 620. The adjustment module 620 adjusts the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 to adjust the floor current intensity distribution on the reference floor 500 to regulate the SAR hot spot distribution of the antenna assembly 100, wherein the SAR hot spot distribution is related to the first resonant current, the second resonant current and the floor current. For a specific implementation, reference may be made to the above step S100.

[0193] See also Fig.32 The present application also provides an electronic device 1000, including a memory 700 and a processor 800, wherein the memory 700 is used to store computer programs, and the processor 800 is used to call and run any one of the methods for controlling the SAR hotspot distribution described in the implementation examples.

[0194] The memory 700 may be a separate device independent of the processor 800 , or may be integrated into the processor 800 .

[0195] It should be understood that the processor 800 of the embodiment of the present application may be an integrated circuit chip with signal processing capabilities. The processor 800 includes the above-mentioned controller. In the implementation process, each step of the above-mentioned method embodiment can be completed by the hardware integrated logic circuit or software instructions in the processor 800. The above-mentioned processor 800 can be a general processor 800, a digital signal processor 800 (Digital Signal Processor, DSP), an application-specific integrated circuit (Application Specific Integrated Circuit, ASIC), a field programmable gate array (Field Programmable Gate Array, FPGA) or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components. The methods, steps and logic block diagrams disclosed in the embodiments of the present application can be implemented or executed. The general processor 800 can be a microprocessor 800 or the processor 800 can also be any conventional processor 800, etc. The steps of the method disclosed in conjunction with the embodiment of the present application can be directly embodied as a hardware decoding processor 800 to execute, or the hardware and software modules in the decoding processor 800 are combined and executed. The software module may be located in a storage medium mature in the art such as a random access memory 700, a flash memory, a read-only memory 700, a programmable read-only memory 700 or an electrically erasable programmable memory 700, a register, etc. The storage medium is located in the memory 700, and the processor 800 reads the information in the memory 700 and completes the steps of the above method in combination with its hardware.

[0196] It can be understood that the memory 700 in the embodiment of the present application can be a volatile memory 700 or a non-volatile memory 700, or can include both volatile and non-volatile memories 700. Among them, the non-volatile memory 700 can be a read-only memory 700 (Read-Only Memory, ROM), a programmable read-only memory 700 (Programmable ROM, PROM), an erasable programmable read-only memory 700 (Erasable PROM, EPROM), an electrically erasable programmable read-only memory 700 (Electrically EPROM, EEPROM) or a flash memory. The volatile memory 700 can be a random access memory 700 (Random Access Memory, RAM), which is used as an external cache. By way of example and not limitation, many forms of RAM are available, such as static random access memory 700 (SRAM), dynamic random access memory 700 (DRAM), synchronous dynamic random access memory 700 (SDRAM), double data rate synchronous dynamic random access memory 700 (DDR SDRAM), enhanced synchronous dynamic random access memory 700 (ESDRAM), synchronous link dynamic random access memory 700 (SLDRAM), and direct memory bus random access memory 700 (DRRAM). It should be noted that the memory 700 of the systems and methods described herein is intended to include, but is not limited to, these and any other suitable types of memory 700.

[0197] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in the field can change, modify, replace and modify the above embodiments within the scope of the present application, and these improvements and modifications are also regarded as the scope of protection of the present application.

Claims

1. A method for controlling SAR hotspot distribution, characterized in that: Applied to electronic equipment, the electronic equipment comprises a reference floor and an antenna assembly arranged along the reference ground edge of the reference floor, the antenna assembly comprises a radiator and a signal source, the radiator comprises a main radiator and a parasitic radiator, the main radiator comprises a first grounding end, a feeding point and a first free end arranged in sequence, the parasitic radiator comprises a second free end and a second grounding end, the first free end is coupled to the second free end, and the first grounding end and the second grounding end are both electrically connected to the reference floor; The signal source is electrically connected to the feeding point, and is used to excite the main radiator and the parasitic radiator to jointly generate a target resonance mode supporting a target frequency band, a direction of a first resonance current of the target resonance mode on the main radiator is the same as a direction of a second resonance current of the target resonance mode on the parasitic radiator, and the first resonance current and the second resonance current flow toward the reference floor to form at least a part of the floor current; The method comprises: The intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator is adjusted to adjust the floor current intensity distribution on the reference floor, so as to regulate the SAR hotspot distribution of the antenna assembly, wherein the SAR hotspot distribution is related to the first resonant current, the second resonant current and the floor current.

2. The method according to claim 1, characterized in that The step of adjusting the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator to adjust the floor current intensity distribution on the reference floor to regulate the SAR hotspot distribution of the antenna assembly includes: The intensity of the first resonant current is adjusted to be greater than the intensity of the second resonant current, and the intensity difference between the first resonant current and the second resonant current is greater than or equal to a first preset current intensity, so that the antenna assembly forms a first SAR hotspot and a second SAR hotspot, the first SAR hotspot is located on a side of the main radiator facing the parasitic radiator, the second SAR hotspot is located on a side of the main radiator away from the parasitic radiator, and the difference between the intensity of the first SAR hotspot and the intensity of the second SAR hotspot is greater than or equal to the first preset SAR intensity.

3. The method according to claim 2, characterized in that In the step of adjusting the intensity of the first resonant current to be greater than the intensity of the second resonant current, and the intensity difference between the intensity of the first resonant current and the intensity of the second resonant current is greater than or equal to the first preset current intensity, When the length of the reference ground edge of the reference floor is 4±1 / 8 times the electrical length of the radiator, and the distance between the ground end of the main radiator and one end of the reference ground edge of the reference floor is 1 / 4±1 / 8 wavelength of the target frequency band, the intensity of the second SAR hotspot is greater than the intensity of the first SAR hotspot; or, When the length of the reference ground edge of the reference floor is 4±1 / 8 times the electrical length of the radiator, and the distance between the ground end of the main radiator and the center position of the reference ground edge of the reference floor is less than or equal to 1 / 8 wavelength of the target frequency band, the intensity of the first SAR hotspot is greater than the intensity of the second SAR hotspot.

4. The method according to claim 1, characterized in that The step of adjusting the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator to adjust the floor current intensity distribution on the reference floor to regulate the SAR hotspot distribution of the antenna assembly includes: The difference between the intensity of the first resonant current and the intensity of the second resonant current is adjusted to be smaller than a first preset current intensity, and the SAR hotspot of the antenna assembly is located on a side of the main radiator away from the parasitic radiator.

5. The method according to claim 1, characterized in that The step of adjusting the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator to adjust the floor current intensity distribution on the reference floor to regulate the SAR hotspot distribution of the antenna assembly includes: The intensity of the first resonant current is adjusted to be smaller than the intensity of the second resonant current, and the intensity difference between the intensity of the second resonant current and the first resonant current is greater than or equal to a first preset current intensity, so that the antenna assembly forms a first SAR hotspot and a second SAR hotspot, the first SAR hotspot is located on a side of the main radiator facing the parasitic radiator, the second SAR hotspot is located on a side of the main radiator away from the parasitic radiator, and the difference between the intensity of the first SAR hotspot and the intensity of the second SAR hotspot is less than the first preset SAR intensity.

6. The method according to claim 5, characterized in that In the step of adjusting the intensity of the first resonant current to be greater than the intensity of the second resonant current, and the intensity difference between the intensity of the first resonant current and the intensity of the second resonant current is greater than or equal to the first preset current intensity, When the length of the reference ground edge of the reference floor is 4±1 / 8 times the electrical length of the radiator, and the distance between the ground end of the main radiator and one end of the reference ground edge of the reference floor is 1 / 4±1 / 8 wavelength of the target frequency band, the intensity of the first SAR hotspot is greater than the intensity of the second SAR hotspot; When the length of the reference ground edge of the reference floor is 4±1 / 8 times the electrical length of the radiator, and the distance between the ground end of the main radiator and the center position of the reference ground edge of the reference floor is less than or equal to 1 / 8 wavelength of the target frequency band, the intensity of the first SAR hotspot is less than the intensity of the second SAR hotspot.

7. The method according to claim 1, characterized in that The antenna assembly further comprises a first tuning circuit and a second tuning circuit, the first ground end of the main radiator being electrically connected to the reference ground via the first tuning circuit, and the second ground end of the parasitic radiator being electrically connected to the reference ground via the second tuning circuit; The step of adjusting the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator to adjust the floor current intensity distribution on the reference floor to regulate the SAR hotspot distribution of the antenna assembly includes: The electrical length of the main radiator is adjusted by the first tuning circuit and / or the electrical length of the parasitic radiator is adjusted by the second tuning circuit to adjust the difference in intensity between the first resonant current on the main radiator and the second resonant current on the parasitic radiator.

8. The method according to claim 7, characterized in that The step of adjusting the electrical length of the main radiator by the first tuning circuit and / or adjusting the electrical length difference of the parasitic radiator by the second tuning circuit to adjust the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator comprises: The electrical length of the main radiator is adjusted by the first tuning circuit and / or the electrical length of the parasitic radiator is adjusted by the second tuning circuit, so that the electrical length of the main radiator is smaller than the electrical length of the parasitic radiator, the intensity of the first resonant current is smaller than the intensity of the second resonant current, and the intensity difference between the intensity of the second resonant current and the first resonant current is greater than or equal to a first preset current intensity.

9. The method according to claim 1, characterized in that The antenna assembly further includes a matching circuit electrically connected between the feed point and the signal source; The step of adjusting the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator to adjust the floor current intensity distribution on the reference floor to regulate the SAR hotspot distribution of the antenna assembly includes: The difference between the resonant frequency of the target resonant mode and the target center frequency is adjusted by a matching circuit, and the resonant frequency of the target resonant mode is located within the effective frequency band of the target center frequency, the target center frequency is the frequency corresponding to 1 / 4 wavelength of the main radiator, and the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator is adjusted.

10. The method according to claim 9, characterized in that The method of adjusting the difference between the resonant frequency of the target resonant mode and the target center frequency by a matching circuit, wherein the resonant frequency of the target resonant mode is located within the effective frequency band of the target center frequency, and the target center frequency is the frequency corresponding to 1 / 4 wavelength of the main radiator, comprises: The resonant frequency of the target resonant mode is adjusted to be on the high-frequency side of the target center frequency through a matching circuit, so that the intensity of the first resonant current is less than the intensity of the second resonant current, and the intensity difference between the intensity of the second resonant current and the first resonant current is greater than or equal to a first preset current intensity.

11. The method according to any one of claims 1 to 10, characterized in that: Before adjusting the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator to adjust the floor current intensity distribution on the reference floor to regulate the SAR hotspot distribution of the antenna assembly, the method further includes: Detecting the SAR value within a target area of ​​the electronic device; When the SAR value in the target area of ​​the electronic device is greater than a second preset SAR intensity, the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator is adjusted to adjust the floor current intensity distribution on the reference floor, so that the SAR value in the target area of ​​the electronic device is reduced to less than the second preset SAR intensity, wherein the target area of ​​the electronic device is an area that is in contact with or close to the subject to be measured.

12. A SAR hotspot distribution control device, characterized in that: Applied to electronic equipment, the electronic equipment comprises a reference floor and an antenna assembly arranged along the reference ground edge of the reference floor, the antenna assembly comprises a radiator and a signal source, the radiator comprises a main radiator and a parasitic radiator, the main radiator comprises a first grounding end, a feeding point and a first free end arranged in sequence, the parasitic radiator comprises a second free end and a second grounding end, the first free end is coupled to the second free end, and the first grounding end and the second grounding end are both electrically connected to the reference floor; The signal source is electrically connected to the feeding point, and is used to excite the main radiator and the parasitic radiator to jointly generate a target resonance mode supporting a target frequency band, a direction of a first resonance current of the target resonance mode on the main radiator is the same as a direction of a second resonance current of the target resonance mode on the parasitic radiator, and the first resonance current and the second resonance current flow toward the reference floor to form at least a part of the floor current; The device comprises: An adjustment module is used to adjust the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator to adjust the floor current intensity distribution on the reference floor, so as to regulate the SAR hotspot distribution of the antenna assembly, wherein the SAR hotspot distribution is related to the first resonant current, the second resonant current and the floor current.

13. An electronic device, characterized in that: The method comprises a memory and a processor, wherein the memory is used to store a computer program, and the processor is used to call and run the computer program stored in the memory to execute the method according to any one of claims 1 to 11.

14. An electronic device, characterized in that: The electronic device comprises a reference floor and an antenna assembly, wherein the antenna assembly is arranged along the reference ground edge of the reference floor, the antenna assembly comprises a radiator and a signal source, the radiator comprises a main radiator and a parasitic radiator, the main radiator comprises a first grounding end, a feeding point and a first free end arranged in sequence, the parasitic radiator comprises a second free end and a second grounding end, the first free end is coupled to the second free end, and the first grounding end and the second grounding end are both electrically connected to the reference floor; The signal source is electrically connected to the feeding point, and is used to excite the main radiator and the parasitic radiator to jointly generate a target resonance mode supporting a target frequency band, a direction of a first resonance current of the target resonance mode on the main radiator is the same as a direction of a second resonance current of the target resonance mode on the parasitic radiator, and the first resonance current and the second resonance current flow toward the reference floor to form at least a part of the floor current; The intensity difference between the first resonant current and the second resonant current is configured as a second preset current intensity to reduce the Sar hotspot intensity of the target area of ​​the electronic device, wherein the Sar hotspot intensity of the target area of ​​the electronic device is related to the first resonant current, the second resonant current and the floor current.

15. The electronic device according to claim 14, characterized in that: The first floor current flowing into the reference floor by the main radiator during resonance includes a first current, a second current, and a first mirror current; the first current and the second current flow from the first ground end along the reference ground edge in opposite directions or converge to the first ground end from two opposite directions, the first mirror current is located at a position where the reference floor is directly opposite to the main radiator, and the direction of the first mirror current is opposite to the direction of the current on the main radiator; The second floor current flowing into the reference floor by the parasitic radiator during resonance includes a third current, a fourth current, and a second mirror current; The third current and the fourth current converge to the second ground terminal from two opposite directions or flow from the second ground terminal to opposite directions along the reference ground edge, and a portion of the third current located on a side of the parasitic radiator away from the main radiator is opposite to a portion of the first current located on a side of the parasitic radiator away from the main radiator; The portion of the fourth current located on the side of the main radiator away from the parasitic radiator is opposite to the portion of the second current located on the side of the main radiator away from the parasitic radiator; The second image current is located at a position where the reference ground plane is directly opposite to the parasitic radiator, and the direction of the second image current is opposite to the direction of the current on the parasitic radiator.

16. The electronic device according to claim 14, characterized in that: The intensity of the first resonant current is greater than the intensity of the second resonant current, and the intensity difference between the first resonant current and the second resonant current is greater than or equal to a first preset current intensity, the antenna assembly forms a first SAR hotspot and a second SAR hotspot, the first SAR hotspot is located on a side of the main radiator facing the parasitic radiator, the second SAR hotspot is located on a side of the main radiator away from the parasitic radiator, and the difference between the intensity of the first SAR hotspot and the intensity of the second SAR hotspot is greater than or equal to a first preset SAR intensity; The length of the reference ground edge of the reference floor is 4±1 / 8 times the electrical length of the radiator, the distance between the first ground terminal and one end of the reference ground edge of the reference floor is 1 / 4 wavelength±1 / 8 wavelength of the target frequency band, the intensity of the first SAR hotspot is less than the intensity of the second SAR hotspot, and the target area is located on a side of the main radiator facing the parasitic radiator; or, The length of the reference ground edge of the reference floor is 4±1 / 8 times the electrical length of the radiator, the distance between the first ground end and the center position of the reference ground edge of the reference floor is less than or equal to 1 / 8 wavelength of the target frequency band, the intensity of the first SAR hotspot is greater than the intensity of the second SAR hotspot, and the target area is located on a side of the main radiator away from the parasitic radiator.

17. The electronic device according to claim 14, characterized in that: The difference between the intensity of the first resonant current and the intensity of the second resonant current is less than a first preset current intensity, the SAR hotspot of the antenna assembly is located on a side of the main radiator away from the parasitic radiator, and the target area is located on a side of the main radiator facing the parasitic radiator.

18. The electronic device according to claim 14, characterized in that: The intensity of the first resonant current is less than the intensity of the second resonant current, and the intensity difference between the intensity of the second resonant current and the first resonant current is greater than or equal to a first preset current intensity, the antenna assembly forms a first SAR hotspot and a second SAR hotspot, the first SAR hotspot is located on a side of the main radiator facing the parasitic radiator, the second SAR hotspot is located on a side of the main radiator away from the parasitic radiator, and the difference between the intensity of the first SAR hotspot and the intensity of the second SAR hotspot is less than the first preset SAR intensity; The length of the reference ground edge of the reference floor is 4±1 / 8 times the electrical length of the radiator, the distance between the first ground terminal and one end of the reference ground edge of the reference floor is 1 / 4±1 / 8 wavelength of the target frequency band, the intensity of the first SAR hotspot is greater than the intensity of the second SAR hotspot, and the target area is located on a side of the main radiator away from the parasitic radiator; or, The length of the reference ground edge of the reference floor is 4±1 / 8 times the electrical length of the radiator, the distance between the first ground end and the center position of the reference ground edge of the reference floor is less than or equal to 1 / 8 wavelength of the target frequency band, the intensity of the first SAR hotspot is less than the intensity of the second SAR hotspot, and the target area is located on a side of the main radiator facing the parasitic radiator.

19. The electronic device according to claim 14, characterized in that: The antenna assembly further comprises a first tuning circuit and a second tuning circuit, the first ground end of the main radiator being electrically connected to the reference ground via the first tuning circuit, and the second ground end of the parasitic radiator being electrically connected to the reference ground via the second tuning circuit; The first tuning circuit is used to adjust the electrical length of the main radiator, and the second tuning circuit is used to adjust the electrical length of the parasitic radiator so that the intensity difference between the first resonant current and the second resonant current is a second preset current intensity.

20. The electronic device according to claim 14, characterized in that: The antenna assembly also includes a matching circuit, which is electrically connected between the feeding point and the signal source; the matching circuit is used to adjust the difference between the resonant frequency of the target resonant mode and the target center frequency to a preset frequency difference, and the resonant frequency of the target resonant mode is located within the effective frequency band of the target center frequency, and the target center frequency is the frequency corresponding to 1 / 4 wavelength of the main radiator, so that the intensity difference between the first resonant current and the second resonant current is a second preset current intensity.

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