Method and device for regulating distribution of sar hotspots, and electronic device

Abstract

The application provides a SAR hot spot distribution regulation method and device and electronic equipment. The electronic equipment comprises a reference floor and an antenna assembly arranged along a reference ground edge of the reference floor, the antenna assembly comprises a radiator and a signal source, the radiator comprises a main radiator and a parasitic radiator, and the method comprises: adjusting a strength difference value of a first resonant current on the main radiator and a second resonant current on the parasitic radiator to adjust a floor current strength distribution on the reference floor, so as to regulate a SAR hot spot distribution of the antenna assembly, wherein the SAR hot spot distribution is related to the first resonant current, the second resonant current and the floor current. The application can regulate the electromagnetic wave specific absorption rate value hot spot distribution and reduce unnecessary power backoff.

Description

Technical Field

[0001] This application relates to the field of communication technology, specifically to a method, apparatus, and electronic device for regulating SAR hotspot distribution. Background Technology

[0002] As communication requirements increase on mobile phones and other electronic devices, the number of antennas that need to be installed on these devices also increases. How to regulate the Specific Absorption Rate (SAR) hotspot distribution on these electronic devices and reduce unnecessary power backoff has become a technical problem that needs to be solved. Summary of the Invention

[0003] This application provides a method, apparatus, and electronic device for regulating the distribution of SAR hotspots by controlling the electromagnetic wave ratio absorptivity value and reducing unnecessary power backoff.

[0004] Firstly, this application provides a method for controlling SAR hotspot distribution, which is applied to electronic devices.

[0005] The electronic device includes a reference ground plane and an antenna assembly disposed along a reference ground edge of the reference ground plane. The antenna assembly includes a radiator and a signal source. The radiator includes a main radiator and a parasitic radiator. The main radiator includes a first ground terminal, a feed point, and a first free terminal disposed sequentially. The parasitic radiator includes a second free terminal and a second ground terminal. The first free terminal and the second free terminal are coupled together. Both the first ground terminal and the second ground terminal are electrically connected to the reference ground plane. The signal source is electrically connected to the feed point. The signal source is used to excite the main radiator and the parasitic radiator to jointly generate a target resonant mode supporting the target frequency band. The direction of the first resonant current of the target resonant mode on the main radiator is the same as the direction of the second resonant current of the target resonant mode on the parasitic radiator. The first resonant current and the second resonant current flow to the reference ground plane to form a ground current. The method includes:

[0006] The intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator is adjusted to regulate the ground current intensity distribution on the reference ground, thereby controlling the SAR hotspot distribution of the antenna assembly, wherein the SAR hotspot distribution is related to the first resonant current, the second resonant current, and the ground current.

[0007] Secondly, this application provides a SAR hotspot distribution control device applied to an electronic device, the electronic device including a reference floor and an antenna assembly disposed along a reference ground edge of the reference floor, the antenna assembly including a radiator and a signal source.

[0008] The electronic device includes a reference ground plane and an antenna assembly disposed along a reference ground edge of the reference ground plane. The antenna assembly includes a radiator and a signal source. The radiator includes a main radiator and a parasitic radiator. The main radiator includes a first ground terminal, a feed point, and a first free terminal disposed sequentially. The parasitic radiator includes a second free terminal and a second ground terminal. The first free terminal and the second free terminal are coupled together. Both the first ground terminal and the second ground terminal are electrically connected to the reference ground plane. The signal source is electrically connected to the feed point. The signal source is used to excite the main radiator and the parasitic radiator to jointly generate a target resonant mode supporting the target frequency band. The direction of the first resonant current of the target resonant mode on the main radiator is the same as the direction of the second resonant current of the target resonant mode on the parasitic radiator. The first resonant current and the second resonant current flow to the reference ground plane to form a ground current. The device includes:

[0009] An adjustment module is used to adjust the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator to adjust the ground current intensity distribution on the reference ground, thereby controlling the SAR hotspot distribution of the antenna assembly, wherein the SAR hotspot distribution is related to the first resonant current, the second resonant current and the ground current.

[0010] Thirdly, this application provides an electronic device including a memory and a processor, wherein the memory is used to store the method described herein, and the processor is used to execute the method described herein.

[0011] Fourthly, this application provides an electronic device comprising a reference ground plane and an antenna assembly. The antenna assembly is disposed along a reference ground edge of the reference ground plane. The antenna assembly includes a radiator and a signal source. The radiator includes a main radiator and a parasitic radiator. The main radiator includes a first ground terminal, a feed point, and a first free terminal arranged sequentially. The parasitic radiator includes a second free terminal and a second ground terminal. The first free terminal and the second free terminal are coupled together. Both the first ground terminal and the second ground terminal are electrically connected to the reference ground plane. The signal source is electrically connected to the feed point and is used to excite the main radiator and the parasitic radiator. Parasitic radiators jointly generate a target resonant mode supporting the target frequency band. The direction of the first resonant current of the target resonant mode on the main radiator is the same as the direction of the second resonant current of the target resonant mode on the parasitic radiator. The first resonant current and the second resonant current flow to the reference ground to form a ground current. The intensity difference between the first resonant current and the second resonant current is configured as a second preset current intensity to reduce the Sar hotspot intensity of the target area of ​​the electronic device. The Sar hotspot intensity of the target area of ​​the electronic device is related to the first resonant current, the second resonant current, and the ground current.

[0012] The SAR hotspot distribution control method, apparatus, and electronic equipment provided in this application adjust the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator to adjust the floor current distribution on the reference floor, thereby controlling the SAR hotspot distribution of the antenna assembly, and further controlling the electromagnetic wave ratio absorption rate hotspot distribution on the electronic equipment to reduce unnecessary power back-off. Attached Figure Description

[0013] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly described below.

[0014] Figure 1 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application;

[0015] Figure 2 This is an exploded view of the structure of an electronic device provided in an embodiment of this application;

[0016] Figure 3 This is a plan view of the antenna assembly provided in the first embodiment of this application in an electronic device;

[0017] Figure 4 This is a schematic diagram of the structure of an antenna assembly provided in the second embodiment of this application;

[0018] Figure 5This is a flowchart of the first SAR hotspot distribution control method provided in the embodiments of this application;

[0019] Figure 6 yes Figure 3 A schematic diagram of the current distribution of the provided antenna assembly and reference ground plane;

[0020] Figure 7 This is a schematic diagram of SAR hotspot distribution of an antenna assembly provided in the first embodiment of this application;

[0021] Figure 8 This is a schematic diagram of the magnetic field distribution of an antenna assembly provided in the first embodiment of this application;

[0022] Figure 9 This is a schematic diagram of the structure of an antenna assembly provided in the third embodiment of this application;

[0023] Figure 10 This is a schematic diagram of SAR hotspot distribution of an antenna assembly provided in the third embodiment of this application;

[0024] Figure 11 This is a schematic diagram of the magnetic field distribution of an antenna assembly provided in the third embodiment of this application;

[0025] Figure 12 This is a schematic diagram of the current distribution of an antenna assembly provided in the third embodiment of this application;

[0026] Figure 13 This is a flowchart of the third SAR hotspot distribution control method provided in the embodiments of this application;

[0027] Figure 14 This is a schematic diagram of SAR hotspot distribution of an antenna assembly provided in the second embodiment of this application;

[0028] Figure 15 This is a schematic diagram of the magnetic field distribution of the antenna assembly provided in the second embodiment of this application;

[0029] Figure 16 This is a schematic diagram of the current distribution of the antenna assembly provided in the second embodiment of this application;

[0030] Figure 17 This is a schematic diagram of the antenna assembly provided in the fourth embodiment of this application;

[0031] Figure 18 This is a schematic diagram of the SAR hotspot distribution of the antenna assembly provided in the fourth embodiment of this application;

[0032] Figure 19 This is a schematic diagram of the magnetic field distribution of the antenna assembly provided in the fourth embodiment of this application;

[0033] Figure 20 This is a flowchart of the first implementation method of a SAR hotspot distribution control method provided in the embodiments of this application;

[0034] Figure 21 This is a schematic diagram of the current distribution of the antenna assembly provided in the fourth embodiment of this application;

[0035] Figure 22 This is a SAR distribution diagram of the antenna assembly provided in the fourth embodiment of this application in scenario (a);

[0036] Figure 23 This is a flowchart of a second implementation method of a SAR hotspot distribution control method provided in this application embodiment;

[0037] Figure 24 This is a SAR distribution diagram of the antenna assembly provided in the fourth embodiment of this application in scenario (b);

[0038] Figure 25 This is a SAR distribution diagram of the antenna assembly provided in the fourth embodiment of this application in scenario (c);

[0039] Figure 26 This is a schematic diagram of the antenna assembly provided in the fourth embodiment of this application, which includes a first tuning circuit and a second tuning circuit.

[0040] Figure 27 This is a schematic diagram of the antenna assembly with a matching circuit provided in the fourth embodiment of this application;

[0041] Figure 28 This is a schematic diagram of the antenna assembly provided in the fifth embodiment of this application;

[0042] Figure 29 This is a schematic diagram of the antenna assembly provided in the sixth embodiment of this application;

[0043] Figure 30 This is a schematic diagram of the antenna assembly provided in the seventh embodiment of this application;

[0044] Figure 31 This is a schematic diagram of the SAR hotspot distribution control device for the antenna assembly provided in the embodiments of this application;

[0045] Figure 32 This is a structural block diagram of the electronic device provided in the embodiments of this application. Detailed Implementation

[0046] The technical solution of this application will now be clearly and completely described with reference to the accompanying drawings. Obviously, the embodiments described in this application are only a part of the embodiments, and not all of the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments provided in this application without creative effort are within the protection scope of this application.

[0047] In this application, the reference to "embodiment" means that a specific feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor is it a mutually exclusive, independent, or alternative embodiment to other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described in this application can be combined with other embodiments.

[0048] The terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish different objects, not to describe a particular order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, an assembly or device comprising one or more components is not limited to the one or more components listed, but may optionally also include one or more components not listed but inherent to the exemplified product, or one or more components that it should have based on the described function.

[0049] Please see Figure 1 , Figure 1 This is a schematic diagram of the structure of an electronic device 1000 provided in an embodiment of this application. The electronic device 1000 includes, but is not limited to, mobile phones, wearable devices, virtual reality (VR) controllers, VR glasses, VR headsets, and other devices with communication functions. This embodiment uses a mobile phone as an example for illustration; other electronic devices can refer to this embodiment.

[0050] Please see Figure 2 The electronic device 1000 includes an antenna assembly 100.

[0051] Please see Figure 2Taking a mobile phone as an example, the working environment of the antenna assembly 100 is illustrated below. The electronic device 1000 includes a display screen 200, a mid-frame 300, and a back cover 400 arranged sequentially along its thickness. The mid-frame 300 includes a mid-plate 310 and a frame 320 surrounding the mid-plate 310. Of course, in other embodiments, the electronic device 1000 may not have a mid-plate 310. The display screen 200, mid-plate 310, and back cover 400 are stacked sequentially, forming receiving spaces between the display screen 200 and the mid-plate 310, and between the mid-plate 310 and the back cover 400, to accommodate components such as the motherboard, camera module, receiver module, battery, and various sensors. One side of the frame 320 surrounds the edge of the display screen 200, and the other side of the frame 320 surrounds the edge of the back cover 400, forming the complete external structure of the electronic device 1000. In this embodiment, the frame 320 and the middle plate 310 are an integral structure, while the frame 320 and the back cover 400 can be separate structures. The above describes the working environment of the antenna assembly 100 using a mobile phone as an example, but the antenna assembly 100 of this application is not limited to the above working environment.

[0052] Please see Figure 3 320mm border Figure 3 The frame formed by the dashed and solid lines includes a top edge 321 and a bottom edge 322 that are arranged opposite to each other, and a pair of side edges 323 connected to the top edge 321 and the bottom edge 322. The top edge 321 is the side away from the ground when the user holds and uses the electronic device 1000, and the bottom edge 322 is the side facing the ground when the user holds and uses the electronic device 1000.

[0053] Electronic devices are frequently used in handheld or close-to-the-head scenarios. Therefore, detecting SAR hotspots and regulating their distribution have become technical challenges that need to be addressed.

[0054] Please see Figure 3 The electronic device 1000 includes a reference ground plane 500 and an antenna assembly 100 disposed along a reference ground edge 510 of the reference ground plane 500. The antenna assembly 100 includes a radiator 10 and a signal source 20, the radiator 10 being electrically connected to the signal source 20 and the reference ground plane 500. The ground terminal of the radiator 10 is electrically connected to the reference ground plane 500.

[0055] The radiator 10 is disposed along and spaced apart from the reference ground edge 510. Further, the radiator 10 may be disposed substantially parallel to the reference ground edge 510. The reference ground edge 510 in this application includes, but is not limited to, at least one of the top edge, bottom edge, and a pair of side edges described above.

[0056] The signal source 20 is mounted on the mainboard of the electronic device 1000. The signal source 20 is electrically connected to a feed point A on the radiator 10. The feed point A may be located at one end of the radiator 10 or between the two ends of the radiator 10. This application does not specifically limit the type of antenna assembly 100. Optionally, the antenna assembly 100 may include, but is not limited to, a monopole antenna, an IFA antenna, a PFA antenna, a T-type antenna, etc.

[0057] This application does not limit the frequency band supported by the antenna assembly 100. Optionally, the frequency band supported by the antenna assembly 100 is the LB band (less than 1 GHz), and the fourth frequency band includes, but is not limited to, at least one of the MHB band (1-3 GHz), UHB band (greater than 3 GHz), and Wi-Fi band.

[0058] The reference floor 500 is made of conductive material and can be installed in the middle plate 310 of the electronic device 1000.

[0059] Optionally, the radiator 10 may take the form of, but is not limited to, a metal frame 320, a metal frame embedded in a plastic frame 320, a metal radiator 10 located within or on the surface of the frame 320, a flexible circuit board antenna formed on a flexible printed circuit board (FPC), a laser-directly formed antenna (LDS), a printed-directly formed antenna (PDS), or a conductive sheet antenna (e.g., a metal bracket antenna). In this embodiment, the radiator 10 being part of a metal frame is used as an example for illustration.

[0060] Please see Figure 4The radiator 10 further includes a main radiator 11 and a parasitic radiator 12. The main radiator 11 includes a first free end 111, a feed point A, and a first ground end 112 arranged sequentially. The feed point A is located between the first ground end 112 and the first free end 111. The parasitic radiator 12 includes a second ground end 121 and a second free end 122. Both the first ground end 112 and the second ground end 121 are electrically connected to the reference ground 500. The first free end 111 and the second free end 122 are coupled through a gap. The signal source 20 is electrically connected to the feed point A. The signal source 20 is used to excite the main radiator 11 and the parasitic radiator 12 to jointly generate a target resonant mode supporting the target frequency band. The direction of the first resonant current of the main radiator 11 in the target resonant mode is the same as the direction of the second resonant current of the parasitic radiator 12 in the target resonant mode. The first resonant current and the second resonant current flow to the reference ground 500 to form at least a portion of the ground current. The intensity difference between the first resonant current and the second resonant current is a second preset current intensity, which reduces the Sar hotspot intensity of the target area of ​​the electronic device 1000. The Sar hotspot intensity of the target area of ​​the electronic device 1000 is related to the first resonant current, the second resonant current, and the ground current. The target area includes, but is not limited to, areas close to the subject under test.

[0061] This application does not specifically limit the intensity difference between the first resonant current and the second resonant current. Optionally, the intensity of the first resonant current is greater than the intensity of the second resonant current, and the intensity difference between the first resonant current and the second resonant current is greater than or equal to a first preset current intensity. Optionally, the intensity difference between the first resonant current and the second resonant current is less than the first preset current intensity. Optionally, the intensity of the first resonant current is less than the intensity of the second resonant current, and the intensity difference between the second resonant current and the first resonant current is greater than or equal to the first preset current intensity.

[0062] Please see Figure 5 , Figure 5 This application also provides a flowchart of a method for controlling SAR hotspot distribution. The method for controlling SAR hotspot distribution is applied to an electronic device 1000. The main radiator 11 and the parasitic radiator 12 together form a resonant mode, which can also be called an EE (electric field-to-electric field) radiation mode. The method includes, but is not limited to, the following steps.

[0063] Step S100: Adjust the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 to adjust the ground current intensity distribution on the reference ground 500, so as to regulate the SAR hot spot distribution of the antenna assembly 100, wherein the SAR hot spot distribution is related to the first resonant current, the second resonant current and the ground current.

[0064] For details, please refer to Figure 5 The direction of the first resonant current of the target resonant mode on the main radiator 11 is the same as the direction of the second resonant current of the target resonant mode on the parasitic radiator 12. The first resonant current and the second resonant current flow towards the reference ground 500 to form at least a portion of the ground current. The ground current includes the distributed current of the resonant current on the radiator 10 flowing towards the reference ground 500, and the mirror current generated by the radiator 10 on the reference ground 500.

[0065] Generally, the distributed current formed by the radiator 10 on the reference ground 500 flows from the ground terminal of the radiator 10 along the reference ground edge 510 of the reference ground 500 in the opposite direction. The direction of the resonant current on the radiator 10 is opposite to the current on the portion of the reference ground 500 directly opposite to the radiator 10, thus the far-field energy of the resonant current on the radiator 10 at least partially cancels out the far-field energy of the floor current on the region of the reference ground 500 directly opposite the radiator 10. In this way, the floor current on the reference ground 500 and the resonant current on the radiator 10 are coupled in a canceling manner.

[0066] Understandably, the SAR hotspot of the antenna assembly 100 is jointly affected by the far-field energy of the ground current on the reference ground 500 and the far-field energy of the resonant current on the radiator 10. Since the energy of the resonant current on the radiator 10 cancels out the energy of the ground current on the opposing reference ground 500, the current after the ground current on the reference ground 500 is coupled with the resonant current on the radiator 10 after cancellation makes the main contribution to the SAR hotspot of the antenna assembly 100.

[0067] The location of the SAR hotspot of the antenna assembly 100 corresponds to the location of the strong current region after the ground current on the reference ground 500 is coupled with the resonant current on the radiator 10 to cancel each other out.

[0068] Among them, the intensity of SAR hotspots is strongest at the center of the hotspot, and the intensity of SAR hotspots gradually decreases from the center towards the periphery.

[0069] When the ground current on the reference ground 500 is coupled with the resonant current on the radiator 10 to cancel each other out, the current distribution along the reference ground edge 510 is divided into a weak current region, a strong current region, and a weak current region. Then, a strong current region corresponds to a SAR hot spot.

[0070] The following example, with reference to the accompanying drawings, illustrates the correspondence between the SAR hotspot of the antenna assembly 100 and the current distribution after the ground current on the reference ground 500 is coupled with the resonant current on the radiator 10 to cancel each other out.

[0071] Please see Figure 3 , Figure 3 This is a schematic diagram of an antenna assembly 100 provided in the first embodiment of this application. The antenna assembly 100 operates in the N78 band (around 3.5 GHz) and is located on the top edge (short top edge) of the mobile phone. Since the free space propagation wavelength corresponding to the N78 band is approximately 80-90 mm, the length of the short side of the mobile phone is close to one full wavelength. Figure 6 The first end of the reference ground edge 510 is A1, the ground end of the radiator 10 is B1, the free end of the radiator 10 is C1, and the second end of the reference ground edge 510 is D1. In this embodiment, the distance between the ground end B1 of the antenna assembly 100 and the first end A1 of the short side is approximately one-quarter of the short side.

[0072] Please see Figure 6 The resonant current on the main radiator 10 flows from the free end C1 to the ground end B1.

[0073] The floor current on the reference floor 500 includes the distributed current flowing from the ground terminal B1 of the radiator 10 to the reference floor 500, as well as the mirror current formed by the radiator 10 on the portion of the reference floor 500 directly opposite the radiator 10.

[0074] Among them, the distributed current flowing from the ground terminal B1 of the radiator 10 to the reference ground 500 is as follows: taking the ground terminal B1 of the antenna assembly 100 as the boundary, the left side of the ground terminal B1 is a quarter-wavelength current mode, and the right side of the ground terminal B1 is a three-quarter-wavelength current mode. It can also be said that there is a quarter-wavelength current mode on both the left and right sides of the ground terminal B1. This is the first outward propagating quarter-wave generated by the antenna excitation. The right side of the ground terminal B1 also has a half-wavelength that lags behind the quarter-wave.

[0075] Figure 7This is a schematic diagram of the SAR hotspot distribution of an antenna assembly 100 according to the first embodiment of this application. Measuring the body SAR distribution at a distance of 5 mm from the antenna assembly 100, it can be seen that the antenna assembly 100 supporting the N78 band in this embodiment generates two SAR hotspots on one side of the reference ground plane 500 at a distance of 80-90 mm. One stronger SAR hotspot is above the ground terminal of the antenna assembly 100, and the other weaker SAR hotspot is on the right side of the antenna assembly 100.

[0076] Please see Figure 8 , Figure 8 This is a schematic diagram of the magnetic field distribution of an antenna assembly 100 according to the first embodiment of this application. As can be seen, the magnetic field distribution on the antenna assembly 100 basically corresponds to the SAR hotspot distribution.

[0077] Please see Figure 6 , Figure 6 The resonant current on the main radiator 10 flows from the free end C1 to the ground end B1, generating a 1 / 4 wavelength mode ground current on the reference ground 500. This current flows from the ground end B1 to the first end A1 of the reference ground edge 510, a 1 / 4 wavelength mode ground current flows from the ground end B1 to near the midpoint of the reference ground edge 510, and a 1 / 2 wavelength mode ground current flows from near the midpoint of the reference ground edge 510 to the second end D1 of the reference ground edge 510. The intensity of the 1 / 2 wavelength mode ground current is less than that of the two 1 / 4 wavelength mode currents on the left. Furthermore, the radiator 10 also forms a mirror current on the reference ground 500 directly opposite to the radiator 10, with the direction of the mirror current opposite to that of the resonant current on the radiator 10.

[0078] The current in radiator 10 flows in the opposite direction to the current on the reference ground 500 directly below radiator 10. For example, the current in radiator 10 flows to the left, while the current on the reference ground 500 directly below radiator 10 flows to the right, and their magnetic fields cancel each other out. However, the current on the reference ground 500 in the quarter between the first terminal A1 and the ground terminal B1 of radiator 10 is very strong and there is no canceling current from radiator 10. Therefore, the main SAR hotspot is located slightly to the left directly above ground terminal B1. The overall current intensity in the halfway point between the reference ground 500 directly below C1 and the second terminal D1 of the reference ground edge 510 is weak, forming a second, weaker SAR hotspot. This embodiment illustrates that the SAR hotspot mainly originates from the contribution of the strong current on the reference ground 500 that is not canceled out by the resonant current on radiator 10.

[0079] Please see Figure 9 , Figure 9This is a schematic diagram of an antenna assembly 100 provided in the second embodiment of this application. Since the propagation wavelength in free space corresponding to the N78 band is approximately 80-90mm, the short side length of the mobile phone is close to a full wavelength. The ground terminal B1 of the antenna assembly 100 is located at the center of the top edge 321. After the resonant current on the radiator 10 flows to the reference ground plane 500, a ground current in half-wavelength mode is formed on both the left and right sides of the reference ground plane 500.

[0080] Please see Figure 10 , Figure 10 This is a schematic diagram of the SAR hotspot distribution of an antenna assembly 100 according to the second embodiment of this application. The antenna assembly 100 operates in the N78 band (around 3.5 GHz) and is located at the top edge 321 (short top edge) of the mobile phone. Measuring the body SAR distribution at a distance of 5 mm from the antenna assembly 100 reveals two SAR hotspots. One stronger SAR hotspot is above the ground terminal B1 of the antenna assembly 100, and the other, a very weak SAR hotspot, is on the right side of the antenna assembly 100. Unlike the first embodiment, in this embodiment, the ground terminal B1 of the monopole antenna is located near the center of the top edge 321 of the mobile phone. Measuring the body SAR distribution at a distance of 5 mm from the antenna assembly 100 shows that the antenna assembly 100 supporting the N78 band generates two SAR hotspots on one side of the reference ground plane 500 at a distance of 80-90 mm. One major SAR hotspot is above the free end C1 of the radiator 10, and a very weak SAR hotspot is on the right side, similar to the left side.

[0081] Traditionally, SAR hotspots are thought to originate primarily from the radiator 10, where the ground terminal B1 of the antenna assembly 100 experiences a large current and magnetic field, thus placing the SAR hotspot above the ground terminal B1. However, this application demonstrates through the first and second embodiments that the SAR hotspot is not directly above the ground terminal B1 of the antenna assembly 100. In the second embodiment, one SAR hotspot is above the free end C1, and the other is to the right of the ground terminal B1.

[0082] Please see Figure 11 , Figure 11 This is a schematic diagram of the magnetic field distribution of an antenna assembly 100 according to the second embodiment of this application. As can be seen, the magnetic field distribution on the antenna assembly 100 basically corresponds to the SAR hotspot distribution.

[0083] Please see Figure 12 , Figure 12This is a schematic diagram of the current distribution of an antenna assembly 100 provided in the second embodiment of this application. The resonant current on the main radiator 10 is directed to the right. The free end C1 of the main radiator 10 is located to the left of the ground end B1.

[0084] The floor current on the reference floor 500 includes the distributed current flowing from the ground terminal B1 of the radiator 10 to the reference floor 500, as well as the mirror current formed by the radiator 10 on the portion of the reference floor 500 directly opposite the radiator 10.

[0085] The distributed current flowing from the ground terminal B1 of the radiator 10 to the reference ground 500 is as follows: a strong half-wavelength current is excited between the first end A1 and the ground terminal B1 of the reference ground edge 510 on the reference ground 500, while a weaker half-wavelength current is excited between the ground terminal B1 and the second end D1 of the reference ground edge 510 on the reference ground 500, forming the two SAR hotspots mentioned above. Since the magnetic field of the resonant current of the main radiator 10 cancels out the magnetic field of the current on the portion of the reference ground 500 directly opposite the radiator 10, the main SAR hotspot is near the center of the left half-wavelength current, while the right half-wavelength current forms a weaker SAR hotspot.

[0086] In this embodiment, the SAR hotspots mentioned above occur in areas where the magnetic field of the strong current region on the reference floor 500 is not canceled out by the magnetic field of the resonant current on the radiator 10. The reason for the occurrence of these SAR hotspots is that the magnetic field of the strong current region on the reference floor 500 is not canceled out by the magnetic field of the resonant current on the radiator 10.

[0087] The floor current distribution on the reference floor 500 can be determined based on the length of the reference ground edge 510 of the reference floor 500, the wavelength of the target frequency band, and the position of the ground terminal B1 of the radiator 10 relative to the reference floor 500.

[0088] For example, when the length of the reference ground edge 510 is close to the wavelength of the target frequency band, when the ground terminal B1 of the radiator 10 is close to the 1 / 4 position on the reference ground 500, current distributions of 1 / 4 wavelength mode, 1 / 4 wavelength mode and 1 / 2 wavelength mode are formed on the reference ground 500.

[0089] When the ground terminal B1 of the radiator 10 approaches the 1 / 2 position on the reference ground 500, a 1 / 2 wavelength mode and a 1 / 2 wavelength mode current distribution are formed on the reference ground 500.

[0090] As the above analysis shows, the SAR hotspots are caused by the fact that the magnetic field of the strong current region on the reference ground 500 is not canceled by the magnetic field of the resonant current on the radiator 10. In this step, the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 is adjusted to regulate the ground current intensity distribution on the reference ground 500. This adjusts the current distribution of the ground current on the reference ground 500 after it is coupled with the resonant current on the radiator 10 to cancel each other out, thereby adjusting the SAR hotspot distribution of the antenna assembly 100.

[0091] Optionally, the electronic device 1000 also includes a proximity detector. The proximity detector is used to detect whether the subject under test is close to the antenna assembly 100.

[0092] Optionally, when the proximity detector detects the approach of the subject under test, the SAR hotspot distribution of the antenna assembly 100 can be adjusted so that the strong areas of the SAR hotspots are distributed in areas that are not approaching the subject under test or are not held by the subject under test, and the areas where the subject under test is approaching are set with weak SAR hotspots or no SAR hotspots are set, so as to avoid the antenna assembly 100 generating unnecessary power back-off.

[0093] Alternatively, when the proximity detector detects the approach of the subject, the SAR hotspot distribution of the antenna assembly 100 can be adjusted to reduce the intensity of the SAR hotspots, so that the SAR distribution around the antenna assembly 100 is balanced, and the intensity of some local SAR hotspots is avoided from being greater than the intensity required for power back-off, thereby avoiding unnecessary power back-off of the antenna assembly 100.

[0094] The SAR hotspot distribution control method, apparatus, and electronic device 1000 provided in this application adjust the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 to adjust the floor current intensity distribution on the reference floor 500, thereby controlling the SAR hotspot distribution of the antenna assembly, and further controlling the electromagnetic wave ratio absorptivity value hotspot distribution on the electronic device 1000 to reduce unnecessary power back-off.

[0095] For example, when the subject under test approaches, the electronic device 1000 adjusts the SAR hotspot of the area where the antenna assembly 100 approaches or contacts the subject under test to reduce power back-off.

[0096] For example, it can balance the SAR hotspot distribution of the antenna assembly 100, avoiding unnecessary power backoff caused by excessive intensity in certain areas.

[0097] Please see Figure 13Step S100: Adjust the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 to adjust the ground current intensity distribution on the reference ground 500, thereby controlling the SAR hotspot distribution of the antenna assembly 100. The SAR hotspot intensity of the target area of ​​the electronic device 1000 is related to the first resonant current, the second resonant current, and the ground current. Previously, the method also included the following steps:

[0098] Step S200: Detect the SAR value within the target area of ​​the electronic device 1000;

[0099] Step S300: When the SAR value in the target area of ​​the electronic device 1000 is greater than the second preset SAR intensity, the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 is adjusted to adjust the ground current intensity distribution on the reference ground 500, thereby controlling the SAR hotspot distribution of the antenna assembly 100, so that the SAR value in the target area of ​​the electronic device 1000 is reduced to less than the second preset SAR intensity. The target area of ​​the electronic device 1000 is the area in contact with or near the subject under test. This application does not specifically limit the second preset SAR intensity; optionally, the second preset SAR intensity should conform to general standards or specifications.

[0100] Optionally, the electronic device 1000 further includes a first detector for detecting the SAR value of the antenna assembly 100 and a second detector (the aforementioned proximity detector) for detecting whether a subject is approaching or contacting the target area of ​​the electronic device 1000. The target area of ​​the electronic device 1000 includes at least one of the following: the area where the user holds the electronic device 1000 with their left hand, the area where the user holds the electronic device 1000 with their right hand, the area where the user holds the electronic device 1000 horizontally with both hands, the area where the user holds the electronic device 1000 with their left hand near their head, and the area where the user holds the electronic device 1000 with their right hand near their head.

[0101] The first detector detects the SAR value of the antenna assembly 100 in or near the target area of ​​the electronic device 1000. When the SAR value in the target area of ​​the electronic device 1000 is greater than the second preset SAR strength, the SAR value in the target area of ​​the electronic device 1000 is reduced to less than the second preset SAR strength to avoid power back-off, thereby ensuring the signal strength and signal quality of the antenna assembly 100.

[0102] Specifically, the distribution of the floor current on the reference floor 500 is affected by the distance between the ground terminal of the radiator 10 and the two ends of the reference ground edge 510 of the reference floor 500, and the resonant current on the radiator 10.

[0103] For details, please refer to Figure 6 and Figure 11 The ground current on the reference ground 500 includes a first sub-current Q1, a second sub-current Q2, and a mirror current Q3. The first sub-current Q1 is distributed between the first end A1 of the reference ground edge 510 and the ground terminal of the radiator 10. The second sub-current Q2 is distributed between the second end D1 of the reference ground edge 510 and the ground terminal of the radiator 10. The directions of the first sub-current Q1 and the second sub-current Q2 are opposite. The current mode of the first sub-current Q1 includes at least one of a 1 / 4 wavelength mode, a 1 / 2 wavelength mode, a 3 / 4 wavelength mode, and a 1x wavelength mode. The current mode of the second sub-current Q2 includes at least one of a 1 / 4 wavelength mode, a 1 / 2 wavelength mode, a 3 / 4 wavelength mode, and a 1x wavelength mode. The mirror current Q3 is opposite in direction to the resonant current on the radiator 10.

[0104] For example, please see Figure 7 The length of the reference ground edge 510 of the reference ground 500 is 4 ± 1 / 8 times the electrical length of the radiator 10. In other words, the length of the reference ground edge 510 of the reference ground 500 is approximately one wavelength of the target frequency band. The distance between the ground terminal of the radiator 10 and one end of the reference ground edge 510 of the reference ground 500 is 1 / 4 wavelength ± 1 / 8 wavelength of the target frequency band. In other words, the distance between the ground terminal of the radiator 10 and one end of the reference ground edge 510 is approximately 1 / 4 wavelength of the target frequency band. The distance between the ground terminal of the radiator 10 and the other end of the reference ground edge 510 is approximately 3 / 4 wavelength of the target frequency band.

[0105] The current mode of the first sub-current Q1 is 1 / 4 wavelength mode, and the current mode of the second sub-current Q2 is 3 / 4 wavelength mode.

[0106] Specifically, the distance between the ground terminal of the radiator 10 and the first terminal A1 of the reference ground edge 510 is approximately 1 / 4 wavelength of the target frequency band. The distance between the ground terminal of the radiator 10 and the second terminal D1 of the reference ground edge 510 is approximately 3 / 4 wavelength of the target frequency band. The free end of the radiator 10 faces the second terminal D1 of the reference ground edge 510. The resonant current on the radiator 10 flows from the free end to the ground terminal. The first sub-current Q1 flows from the ground terminal of the radiator 10 to the first terminal A1 of the reference ground edge 510. A portion of the second sub-current Q2 flows from the ground terminal of the radiator 10 to near the center of the reference ground edge 510, and this portion of the current follows a 1 / 4 wavelength pattern. Another portion of the second sub-current Q2 flows from near the center of the reference ground edge 510 to the second terminal D1 of the reference ground edge 510, and this portion of the current follows a 1 / 2 wavelength pattern.

[0107] The mirror current is located on the part of the reference ground 500 directly opposite to the radiator 10, and the direction of the mirror current is opposite to the direction of the resonant current on the radiator 10.

[0108] Figure 12 The first subcurrent Q1 is in half-wavelength mode, and the second subcurrent Q2 is in half-wavelength mode.

[0109] In this application, the current distribution of the ground current on the reference ground 500 after being coupled with the resonant current on the radiator 10 can be determined based on the ground current on the reference ground 500 and the resonant current on the radiator 10. The intensity of this current distribution is positively correlated with the intensity of the SAR hotspots. In short, the number and location of the current intensity points of the current distribution after the ground current on the reference ground 500 is coupled with the resonant current on the radiator 10 correspond one-to-one with the location and number of SAR hotspots.

[0110] In this embodiment, the floor current distribution on the reference floor 500 is determined based on the distance between the grounding terminal of the main radiator 11 and the two ends of the reference ground edge 510 of the reference floor 500, the distance between the grounding terminal of the parasitic radiator 12 and the two ends of the reference ground edge 510 of the reference floor 500, the resonant current on the main radiator 11, and the resonant current on the parasitic radiator 12.

[0111] This application does not specify the grounding positions of the main radiator 11 and the parasitic radiator 12. The following description, in conjunction with the accompanying drawings, uses a third embodiment where the main radiator 11 is a monopole antenna, the frequency band supported by the main radiator 11 is N78, the total length of the reference ground edge 510 of the reference ground 500 is approximately one wavelength of the frequency band supported by the main radiator 11, the distance between the first ground terminal 112 of the main radiator 11 and the first end A1 of the reference ground edge 510 of the reference ground 500 is approximately one-quarter of the total length of the reference ground edge 510, and the second ground terminal 121 of the parasitic radiator 12 is located near the midpoint of the reference ground edge 510.

[0112] Please see Figure 4The first ground current flowing into the reference ground 500 when the main radiator 11 resonates includes a first current N1, a second current N2, and a first mirror current N5. The first current N1 is distributed between the first end A1 of the reference ground edge 510 and the ground terminal of the main radiator 11. The second current N2 is distributed between the second end D1 of the reference ground edge 510 and the ground terminal of the main radiator 11. The directions of the first current N1 and the second current N2 are opposite. The current mode of the first current N1 includes at least one of a 1 / 4 wavelength mode, a 1 / 2 wavelength mode, a 3 / 4 wavelength mode, and a 1x wavelength mode. The current mode of the second current N2 includes at least one of a 1 / 4 wavelength mode, a 1 / 2 wavelength mode, a 3 / 4 wavelength mode, and a 1x wavelength mode. The direction of the first mirror current N5 is opposite to that of the resonant current on the main radiator 11.

[0113] Please see Figure 4 The second ground current flowing into the reference ground 500 when the parasitic radiator 12 resonates includes a third current N3, a fourth current N4, and a second mirror current N6. The third current N3 is distributed between the first end A1 of the reference ground edge 510 and the grounding end of the parasitic radiator 12. The fourth current N4 is distributed between the second end D1 of the reference ground edge 510 and the grounding end of the parasitic radiator 12. The directions of the third current N3 and the fourth current N4 are opposite. The current mode of the third current N3 includes at least one of a 1 / 4 wavelength mode, a 1 / 2 wavelength mode, a 3 / 4 wavelength mode, and a 1x wavelength mode. The current mode of the fourth current N4 includes at least one of a 1 / 4 wavelength mode, a 1 / 2 wavelength mode, a 3 / 4 wavelength mode, and a 1x wavelength mode. The direction of the second mirror current N6 is opposite to the resonant current on the parasitic radiator 12.

[0114] Please see Figure 4In the electronic device 1000 provided in this application, the first floor current of the main radiator 11 on the reference floor 500 includes a first current N1, a second current N2, and a first mirror current N5. The first current N1 and the second current N2 flow from the first ground terminal 112 along the reference ground edge 510 in opposite directions or converge to the first ground terminal 112 from two opposite directions. The first mirror current N5 is located on the reference floor 500 directly opposite to the main radiator 11, and the direction of the first mirror current N5 is opposite to the current direction on the main radiator 11. The second floor current of the parasitic radiator 12 on the reference floor 500 includes a third current N3, a fourth current N4, and a second mirror current N6. The third current N3 and the fourth current N4 converge to the second ground terminal 121 from two opposite directions or flow from the second ground terminal 121 along the reference ground edge 510 in opposite directions. The portion of the third current N3 located on the side of the parasitic radiator 12 away from the main radiator 11 is opposite to the portion of the first current N1 located on the side of the parasitic radiator 12 away from the main radiator 11. The portion of the fourth current N4 located on the side of the main radiator 11 away from the parasitic radiator 12 is opposite to the portion of the second current N2 located on the side of the main radiator 11 away from the parasitic radiator 12. The second mirror current N6 is located at the position of the reference floor 500 directly opposite to the parasitic radiator 12, and the direction of the second mirror current N6 is opposite to the direction of the current on the parasitic radiator 12.

[0115] The magnetic field of the current on the reference floor 500 facing the main radiator 11 can cancel the magnetic field of the first resonant current on the main radiator 11, thereby reducing the SAR hotspot distribution corresponding to the main radiator 11; the magnetic field of the current on the reference floor 500 facing the parasitic radiator 12 can cancel the magnetic field of the second resonant current on the parasitic radiator 12, thereby reducing the SAR hotspot distribution corresponding to the parasitic radiator 12.

[0116] In one optional implementation, by adjusting the resonant current distribution on the main radiator 11 and the parasitic radiator 12 in the target resonant mode, the first floor current and the second floor current on the side of the parasitic radiator 12 away from the main radiator 11 are made to be opposite in direction. This causes the energy of the first floor current and the second floor current on the side of the parasitic radiator 12 away from the main radiator 11 on the reference floor 500 to cancel each other out, thereby reducing the current intensity on the side of the parasitic radiator 12 away from the main radiator 11 on the reference floor 500 and reducing the SAR hotspot distribution on the side of the parasitic radiator 12 away from the main radiator 11 on the reference floor 500.

[0117] In another optional implementation, by adjusting the resonant current distribution on the main radiator 11 and the parasitic radiator 12 in the target resonant mode, the first floor current and the second floor current on the side of the main radiator 11 away from the parasitic radiator 12 are made to be opposite in direction, thereby canceling out the energy of the first floor current and the second floor current on the side of the main radiator 11 away from the parasitic radiator 12, thereby reducing the current intensity on the side of the main radiator 11 away from the parasitic radiator 12 on the reference floor 500, and reducing the SAR hotspot distribution on the side of the main radiator 11 away from the parasitic radiator 12 on the reference floor 500.

[0118] One or both of the above implementation methods can be implemented to reduce the current intensity on the side of the main radiator 11 on the reference floor 500 away from the parasitic radiator 12 and on the side of the parasitic radiator 12 on the reference floor 500 away from the main radiator 11, thereby reducing the SAR hotspot intensity on the side of the main radiator 11 away from the parasitic radiator 12 and on the side of the parasitic radiator 12 on the reference floor 500 away from the main radiator 11.

[0119] The following examples illustrate the current distribution on the main radiator 11 and the parasitic radiator 12 with reference to the accompanying drawings.

[0120] Please see Figure 14 , Figure 14 This is a schematic diagram of the 5mm body SAR hotspot distribution of the antenna assembly 100 provided in the third embodiment of this application. A structural schematic diagram of the antenna assembly 100 provided in the third embodiment is shown below. Figure 15 As shown, a major SAR hotspot is located to the left front of the first grounding terminal 112 of the main radiator 11, while a very weak SAR hotspot is located to the right.

[0121] Please see Figure 15 , Figure 15 This is a schematic diagram of the magnetic field distribution of the antenna assembly 100 provided in the third embodiment of this application. As can be seen, the magnetic field distribution on the antenna assembly 100 basically corresponds to the SAR hotspot distribution.

[0122] Please see Figure 16 , Figure 16This is a schematic diagram of the current distribution of the antenna assembly 100 provided in the third embodiment of this application. The ground current of the reference ground 500 at this time includes a first ground current and a second ground current formed by the main radiator 11 on the reference ground 500. The first ground current includes a first current N1 and a second current N2 flowing from the first resonant current on the main radiator 11 to the reference ground 500, and a first mirror current N5 mirrored from the main radiator 11 onto the reference ground 500. The first current N1 and the second current N2 are in opposite directions. When the first resonant current flows from the first free end 111 to the first ground end 112, the first current N1 and the second current N2 flow from the first ground end 112 of the main radiator 11 along the reference ground edge 510 to the first end A1 and the second end D1, respectively. In this embodiment, the first current N1 is in a 1 / 4 wavelength mode. The second current N2 includes a 1 / 4 wavelength mode current located directly below the main radiator 11 and oriented to the left, a 1 / 4 wavelength mode current located directly below the parasitic radiator 12 and oriented to the left, and a 1 / 2 wavelength mode current located between the second ground terminal 121 of the parasitic radiator 12 and the second terminal D1 of the reference ground edge 510 and oriented to the left.

[0123] The first mirror current N5, which is mirrored onto the reference ground 500 by the main radiator 11, is in the opposite direction to the first resonant current on the main radiator 11, and the first mirror current N5 is located on the reference ground 500 directly opposite the main radiator 11.

[0124] The second floor current consists of the third current N3 and the fourth current N4 formed by the second resonant current on the parasitic radiator 12 flowing to the reference floor 500, and the second mirror current N6 parasitically mirrored onto the reference floor 500.

[0125] The third current N3 and the fourth current N4 are in opposite directions. When the second resonant current flows from the second ground terminal 121 to the second free terminal 122, the third current N3 and the fourth current N4 flow from the second ground terminal 121 of the parasitic radiator 12 along the reference ground edge 510 to the first terminal A1 and the second terminal D1, respectively.

[0126] The second mirror current N6, which is mirrored onto the reference floor 500 by the parasitic radiator 12, is in the opposite direction to the second resonant current on the parasitic radiator 12, and the second mirror current N6 is located on the reference floor 500 directly opposite the parasitic radiator 12.

[0127] In this embodiment, the main radiator 11 generates a mouth-to-mouth (EE) radiation mode, wherein the first resonant current on the main radiator 11 is dominant, and the reference ground 500 directly below the main radiator 11 and the parasitic radiator 12 will couple to generate a reverse current (relative to the resonant current on the radiator 10), which partially cancels out the magnetic field generated by the current of the main radiator 11 and the parasitic radiator 12.

[0128] The first resonant current flowing into the reference ground 500 from the main radiator 11 forms a quarter-wavelength current to the left, creating an upper SAR hotspot. The strongest point corresponds to the point of maximum quarter-wavelength current. A rightward current is also formed directly below the main radiator 11, which cancels out the magnetic field of the first resonant current on the main radiator 11. The second ground terminal 121 of the parasitic radiator 12, located near the center of the reference ground 500, forms a half-wavelength current to the right. Because the resonant current on the parasitic radiator 12 is weaker, the SAR hotspot is also weaker.

[0129] Therefore, it can be seen that the parasitic radiator 12 has the function of current interception. In EE mode, the current is mainly in the main radiator 11 segment. At this time, the main current on the reference floor 500 is near the main radiator 11, and there is a tendency for the current to be cut off when it flows to the parasitic position.

[0130] The following description, in conjunction with the accompanying drawings, uses the fourth embodiment where the main radiator 11 is a monopole antenna, the frequency band supported by the main radiator 11 is N78, the total length of the reference ground edge 510 of the reference ground 500 is approximately one wavelength of the frequency band supported by the main radiator 11, the first ground terminal 112 of the main radiator 11 is located near the midpoint of the reference ground edge 510, and the distance between the second ground terminal 121 of the parasitic radiator 12 and the first terminal A1 of the reference ground edge 510 of the reference ground 500 is approximately one-quarter of the total length of the reference ground edge 510.

[0131] Please see Figure 17 , Figure 17 This is a schematic diagram of the antenna assembly 100 provided in the fourth embodiment of this application. The grounding terminal of the main radiator 11 is electrically connected to the vicinity of the midpoint of the reference ground edge 510, and the distance between the grounding terminal of the parasitic radiator 12 and the first end A1 of the reference ground edge 510 is approximately 1 / 4 of the total length of the reference ground edge 510.

[0132] Please see Figure 18 , Figure 18 This is a schematic diagram of the 5mm body SAR hotspot distribution of the antenna assembly 100 provided in the fourth embodiment of this application. At this time, a major SAR hotspot is located above and to the right of the parasitic radiator 12, while another SAR hotspot on the left is very weak.

[0133] Please see Figure 19 , Figure 19 This is a schematic diagram of the magnetic field distribution of the antenna assembly 100 provided in the fourth embodiment of this application. As can be seen, the magnetic field distribution on the antenna assembly 100 basically corresponds to the SAR hotspot distribution.

[0134] Please see Figure 17 , Figure 17The document provides a current distribution for the antenna assembly 100 according to a fourth embodiment. In this embodiment, the ground current of the reference ground 500 includes a first ground current and a second ground current formed by the main radiator 11 on the reference ground 500. The first ground current includes a first current N1 and a second current N2 flowing from the first resonant current on the main radiator 11 to the reference ground 500, and a first mirror current N5 mirrored from the main radiator 11 onto the reference ground 500. The first current N1 and the second current N2 are in opposite directions. When the first resonant current flows from the first ground terminal 112 to the first free terminal 111, the first current N1 and the second current N2 flow from the first terminal A1 and the second terminal D1 of the reference ground edge 510 to the first ground terminal 112 of the main radiator 11, respectively. In this embodiment, the first current N1 includes a 1 / 4 wavelength mode current from the first terminal A1 of the reference ground edge 510 to the second ground terminal 121 of the parasitic radiator 12, a 1 / 4 wavelength mode current to the right located directly below the parasitic radiator 12, and a 1 / 4 wavelength mode current to the right located directly below the main radiator 11. The second current N2 includes a 1 / 2 wavelength mode current to the left from the second terminal D1 of the reference ground edge 510 to the second ground terminal 121 of the main radiator 11.

[0135] The first mirror current N5, which is mirrored onto the reference ground 500 by the main radiator 11, is in the opposite direction to the first resonant current on the main radiator 11, and the first mirror current N5 is located on the reference ground 500 directly opposite the main radiator 11.

[0136] The second floor current consists of the third current N3 and the fourth current N4 formed by the second resonant current on the parasitic radiator 12 flowing to the reference floor 500, and the second mirror current N6 parasitically mirrored onto the reference floor 500.

[0137] The third current N3 and the fourth current N4 are in opposite directions. When the second resonant current flows from the second free end 122 to the second ground end 121, the third current N3 and the fourth current N4 flow from the second ground end 121 of the parasitic radiator 12 along the reference ground edge 510 to the first end A1 and the second end D1, respectively.

[0138] The second mirror current N6, which is mirrored onto the reference floor 500 by the parasitic radiator 12, is in the opposite direction to the second resonant current on the parasitic radiator 12, and the second mirror current N6 is located on the reference floor 500 directly opposite the parasitic radiator 12.

[0139] In this embodiment, the main radiator 11 generates a mouth-to-mouth (EE) radiation mode, wherein the resonant current on the main radiator 11 is dominant. The reference ground 500 directly below the main radiator 11 and the parasitic radiator 12 will couple to generate a current in the opposite direction (relative to the resonant current on the main radiator 11 and the parasitic radiator 12), which partially cancels the magnetic field generated by the resonant current of the main radiator 11 and the parasitic radiator 12. The first resonant current of the main radiator 11 flowing into the reference ground 500 will form a half-wavelength current to the left, forming an upper SAR hot spot. The strongest point corresponds to the point where the half-wavelength current is the largest. A right-hand current is also formed directly below the main radiator 11. The magnetic field of this right-hand current cancels the magnetic field of the current on the main radiator 11. The second ground terminal 121 of the parasitic radiator 12 is on the left side of the reference ground 500, forming a quarter-wavelength current to the left. Due to the current-cutting effect of the parasitic radiator 12, the current is mainly in the main radiator 11 segment when in EE mode. The quarter-wave current on the left side of the reference ground 500 is weaker. Therefore, the SAR hot spot on the side of the parasitic radiator 12 away from the main radiator 11 is weaker.

[0140] Please see Figure 17 , Figure 17 The current distribution of the antenna assembly 100 provided in the fourth embodiment is provided. It can be seen that the third current N3 on the reference ground 500 of the parasitic radiator 12 and the first current N1 on the reference ground 500 of the main radiator 11 still cancel each other out on the left side of the reference ground 500, which also illustrates the current-cutting effect of the parasitic radiator 12.

[0141] The above embodiments illustrate that after a parasitic radiator 12 is placed on one side of the main radiator 11, the parasitic radiator 12 can intercept the current on the reference floor 500. That is, after the parasitic radiator 12 is placed, the current on the side of the parasitic radiator 12 on the reference floor 500 away from the main radiator 11 is weakened, thereby weakening or even eliminating the SAR hotspot. One reason for this is that the main radiator 11 and the parasitic radiator 12 form an EE (electric field-to-electric field) radiation mode. In this mode, the current intensity is mainly concentrated on the main radiator 11, while the current intensity on the parasitic radiator 12 is weak, and the side of the parasitic radiator 12 on the reference floor 500 away from the main radiator 11 is also weaker. Another reason is that the first floor current and the second floor current on the side of the parasitic radiator 12 away from the main radiator 11 are in opposite directions and can cancel each other out, reducing the current intensity on the side of the parasitic radiator 12 away from the main radiator 11.

[0142] In this embodiment, by adjusting the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 in the target resonant mode, the intensity difference between the first floor current and the second floor current can be changed, thereby changing the current distribution intensity on the reference floor 500 after the resonant current on the radiator 10 cancels out, and thus adjusting the intensity distribution of the at least one SAR hot spot, so as to change the SAR hot spot distribution of the antenna assembly 100. When the subject under test approaches, the electronic device 1000 adjusts the SAR hot spot in the area of ​​the antenna assembly 100 that is close to or in contact with the subject under test to reduce the power backoff.

[0143] Step S100, adjusting the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 to adjust the ground current intensity distribution on the reference ground 500, thereby controlling the SAR hotspot distribution of the antenna assembly 100, includes:

[0144] In the first alternative implementation, please refer to Figure 20 Step S110: Adjust the intensity of the first resonant current to be greater than the intensity of the second resonant current, and ensure that the intensity difference between the first and second resonant currents is greater than or equal to a first preset current intensity, so that the antenna assembly forms a first SAR hotspot and a second SAR hotspot. The first SAR hotspot is located on the side of the main radiator 11 facing the parasitic radiator 12, and the second SAR hotspot is located on the side of the main radiator 11 away from the parasitic radiator 12. The intensity difference between the first and second SAR hotspots is greater than or equal to the first preset SAR intensity.

[0145] This application does not specifically limit the first preset current intensity. The first preset current intensity can be reflected in the distribution of SRA hot spots. The first preset current intensity causes two SAR hot spots to be formed on both sides of the main radiator 11, and the two SAR hot spots are obviously distributed with one being stronger and the other weaker.

[0146] When the length of the reference ground edge 510 of the reference floor 500 is 4 ± 1 / 8 times the electrical length of the radiator 10, and the distance between the first ground terminal 112 and one end of the reference ground edge 510 of the reference floor 500 is 1 / 4 wavelength ± 1 / 8 wavelength of the target frequency band, the intensity of the second SAR hotspot is greater than the intensity of the first SAR hotspot. The target region is located on the side of the main radiator 11 facing the parasitic radiator 12.

[0147] When the length of the reference ground edge 510 of the reference floor 500 is 4 ± 1 / 8 times the electrical length of the radiator 10, and the distance between the first ground terminal 112 and the center position of the reference ground edge 510 of the reference floor 500 is less than or equal to 1 / 8 wavelength of the target frequency band, the intensity of the first SAR hotspot is greater than the intensity of the second SAR hotspot. The target area is located on the side of the main radiator 11 away from the parasitic radiator 12.

[0148] Please see Figure 21 Taking the fourth embodiment as an example, assuming the main radiator 11 is still located near the center of the reference ground edge 510, the first resonant current on the main radiator 11 is J1, and its ground currents are denoted as J1L and J1R according to their left and right flow directions, respectively. It is easy to see that the intensity of J1L and J1R is proportional to J1. The current generated on the reference ground 500 by the mirror image of J1 is J1mirror. Similarly, the second resonant current on the parasitic radiator 12 is denoted as J2, and its ground currents are denoted as J2L and J2R according to their left and right flow directions, respectively. The intensity of J2L and J2R is proportional to J2, and the current generated on the reference ground 500 by the mirror image of J1 is J2mirror. The current diagram is shown below. Figure 22 As shown.

[0149] Please see Figure 22 , Figure 22 This is a SAR distribution diagram of the antenna assembly provided in the fourth embodiment of this application in scenario (a).

[0150] The J1 and J2 currents on radiator 10 are opposite to the J1R, J2R, J1mirror, and J2mirror below it, thus canceling out the magnetic field above radiator 10 and preventing the formation of a SAR hotspot. J1L, however, will form a SAR hotspot. For J1R and J2L, if the current J1 on the main radiator 11 is much greater than the current J2 on the parasitic radiator 12, then the intensity of J1R will be much greater than that of J2L, forming a SAR hotspot above the ground terminal of the parasitic radiator 12. Since the reference ground plane 500 distance of J1R is relatively short, the current distribution is concentrated, even higher than that of the J1L segment. Therefore, a primary SAR hotspot can be formed above the ground terminal of the parasitic radiator 12, while a weaker SAR hotspot distribution forms above the right reference ground plane 500. In other words, at least a first SAR hotspot is formed on the side of the main radiator 11 facing the parasitic radiator 12, and at least a second SAR hotspot is formed on the side of the main radiator 11 away from the parasitic radiator 12. The difference between the intensity of the first SAR hotspot and the intensity of the second SAR hotspot is greater than or equal to the first preset SAR intensity.

[0151] This application does not specifically limit the first preset SAR intensity. Optionally, using the first preset SAR intensity as a boundary is to illustrate that the two SAR hotspots are clearly distributed with one being stronger and the other weaker.

[0152] In the second alternative implementation, step S120, please refer to... Figure 23 The intensity difference between the first resonant current and the second resonant current is adjusted to be less than a first preset current intensity. The SAR hotspot of the antenna assembly 100 is located on the side of the main radiator 11 away from the parasitic radiator 12. The number of SAR hotspots of the antenna assembly 100 may include one or more. The target region is located on the side of the main radiator 11 facing the parasitic radiator 12.

[0153] In this embodiment, the first preset current intensity is not specifically limited. Setting a first preset current intensity indicates that the intensity of the first resonant current and the intensity of the second resonant current are similar. A small difference between the intensity of the first resonant current and the second resonant current includes the intensity of the first resonant current being substantially the same or identical to the intensity of the second resonant current.

[0154] Please see Figure 24 , Figure 24 This is a SAR distribution diagram of the antenna assembly provided in the fourth embodiment of this application in scenario (b). Taking the fourth embodiment as an example, the resonant current intensities on the main radiator 11 and the parasitic radiator 12 are basically similar, the intensity of J1R is basically the same as the intensity of J2L, the current on the left side of the parasitic radiator 12 on the reference floor 500 is basically canceled out, the SAR hotspot in this area disappears, and at this time a strong and unique SAR hotspot distribution is formed above the reference floor 500 on the right side.

[0155] In a third optional embodiment, the intensity of the first resonant current is adjusted to be less than the intensity of the second resonant current, and the intensity difference between the second resonant current and the first resonant current is greater than or equal to a first preset current intensity, so that the antenna assembly 100 forms a first SAR hotspot and a second SAR hotspot. The first SAR hotspot is located on the side of the main radiator 11 facing the parasitic radiator 12. The second SAR hotspot is located on the side of the main radiator 11 away from the parasitic radiator 12. The intensity difference between the first SAR hotspot and the second SAR hotspot is less than the first preset SAR intensity. The target area is located on the side of the main radiator 11 facing the parasitic radiator 12.

[0156] When the length of the reference ground edge 510 of the reference floor 500 is approximately 4 ± 1 / 8 times the electrical length of the radiator 10, and the distance between the first ground terminal 112 and one end of the reference ground edge 510 of the reference floor 500 is 1 / 4 wavelength ± 1 / 8 wavelength of the target frequency band, the intensity of the second SAR hotspot is greater than the intensity of the first SAR hotspot.

[0157] When the length of the reference ground edge 510 of the reference floor 500 is 4 ± 1 / 8 times the electrical length of the radiator 10, and the distance between the ground terminal of the radiator 10 and the center position of the reference ground edge 510 of the reference floor 500 is less than or equal to 1 / 8 wavelength of the target frequency band, the intensity of the first SAR hotspot is less than the intensity of the second SAR hotspot.

[0158] Please see Figure 25 , Figure 25 This is a SAR distribution diagram of the antenna assembly provided in the fourth embodiment of this application under scenario (c). In this embodiment, the first resonant current J1 on the main radiator 11 is less than the second resonant current J2 on the parasitic radiator 12. The intensity of J1R is less than the intensity of J2L. At this time, there will still be two SAR hotspots, one located above the ground terminal of the parasitic radiator 12 and the other located above the reference ground 500 on the right side of the main radiator 11. The strength of the SAR hotspot on the left side depends on the intensity difference between J1R and J2L. That is, by adjusting the current distribution ratio of the main radiator 11 and the parasitic radiator 12, the strength and distribution of the SAR hotspots can be flexibly controlled.

[0159] In this embodiment, the two SAR hotspots generated by the main radiator 11 and the parasitic radiator 12 have relatively uniform intensity, that is, this embodiment can balance the intensity distribution of the antenna assembly 100.

[0160] In this application, by designing the grounding terminal of the main radiator 11 to be located near the center of the reference ground edge 510, the distribution of SAR hotspots can be controlled by changing the current difference between the main radiator 11 and the parasitic radiator 12. The 5mm body SAR values ​​for scenarios (a), (b), and (c) are 2.59 W / kg, 2.3 W / kg, and 2.18 W / kg, respectively. Compared to scenarios (a) and (b), it is clear that the resonant current on the main radiator 11 in scenario (c) is smaller than the resonant current on the parasitic radiator 12, resulting in a more uniform SAR hotspot distribution. This application achieves balanced SAR hotspot distribution by changing the current difference between the main radiator 11 and the parasitic radiator 12, thereby reducing SAR. In actual simulations, by balancing the SAR hotspot distribution, the same antenna assembly 100 can reduce SAR by up to 15% in the same environment.

[0161] This application does not limit the specific means by which the intensity difference between the first resonant current and the second resonant current is calculated. The following description, in conjunction with the accompanying drawings, provides illustrative examples of embodiments.

[0162] In the first implementation, please refer to Figure 26 The antenna assembly 100 further includes a first tuning circuit T1 and a second tuning circuit T2. The main radiator 11 is electrically connected to the reference ground plane 500 through the first tuning circuit T1. Specifically, the first ground terminal 112 of the main radiator 11 is electrically connected to the reference ground plane 500 through the first tuning circuit T1. The second ground terminal 121 of the parasitic radiator 12 is electrically connected to the reference ground plane 500 through the second tuning circuit T2. The first tuning circuit is used to adjust the electrical length of the main radiator, and the second tuning circuit is used to adjust the electrical length of the parasitic radiator, so that the intensity difference between the first resonant current and the second resonant current is a second preset current intensity.

[0163] Step S100, adjusting the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 to adjust the ground current intensity distribution on the reference ground 500, thereby controlling the SAR hotspot distribution of the antenna assembly 100, includes:

[0164] The difference between the electrical length of the main radiator 11 and the electrical length of the parasitic radiator 12 is adjusted by the first tuning circuit T1 and the second tuning circuit T2, thereby adjusting the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12.

[0165] Optionally, the first tuning circuit T1 is an adjustable impedance circuit.

[0166] Optionally, the first tuning circuit T1 includes an antenna switch and / or an adjustable capacitor.

[0167] Please see Figure 26 Optionally, the first tuning circuit T1 further includes a first switching unit K1 and multiple first tuning branches T12. One end of each of the multiple first tuning branches T12 is electrically connected to one end of the first switching unit K1, and the other end of the first switching unit K1 is electrically connected to a first ground terminal 112. That is, the first switching unit K1 includes, but is not limited to, a transistor, a field-effect transistor, etc. The other ends of each of the multiple first tuning branches T12 are grounded.

[0168] Each of the first tuning branches T12 has a different impedance value. For example, the multiple first tuning branches T12 are multiple capacitors with different capacitance values. Alternatively, the multiple first tuning branches T12 are multiple inductors with different inductance values. Or, the multiple first tuning branches T12 include multiple capacitors with different capacitance values ​​and multiple inductors with different inductance values. The impedance of the first tuning circuit T1 is adjusted by adjusting the electrical connection of the first switching unit K1 to different first tuning branches T12.

[0169] Of course, in other embodiments, the first tuning circuit T1 can also be an adjustable capacitor.

[0170] The electronic device 1000 also includes a controller (not shown). The controller is electrically connected to a first switching unit K1. The controller controls the switching of the first switching unit K1 to adjust the impedance value of the first tuning circuit T1, thereby adjusting the electrical length of the main radiator 11, thereby adjusting the current intensity of the resonant current on the main radiator 11, and thereby adjusting the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12.

[0171] Similarly, please see Figure 26 The second tuning circuit T2 may include a second switching unit K2 and multiple second tuning branches T12, with the second tuning branches T12 referring to the first tuning branch T11 described above. The connection and coordination between the second switching unit K2 and the multiple second tuning branches T12 can refer to the connection and coordination between the first switching unit K1 and the multiple first tuning branches T12, or it can be an adjustable capacitor to adjust the impedance of the second tuning circuit T2.

[0172] The controller is electrically connected to the second switching unit K2. The controller controls the switching of the second switching unit K2 to adjust the impedance value of the second tuning circuit T2, thereby adjusting the electrical length of the parasitic radiator 12, thereby adjusting the current intensity of the resonant current on the parasitic radiator 12, and thereby adjusting the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12.

[0173] By adjusting the impedance of the first tuning circuit T1 to decrease, the current is more concentrated in the main radiator 11, and the first resonant current of the main radiator 11 increases.

[0174] By adjusting the impedance of the second tuning circuit T2, the current is more concentrated in the parasitic radiator 12, and the second resonant current of the parasitic radiator 12 increases.

[0175] Optionally, in the electronic device 1000 provided in this application, the controller is used to control the impedance value of the second tuning circuit T2 to be less than the impedance value of the second tuning circuit T2, so that the current on the radiator 10 is more concentrated on the parasitic radiator 12, thereby realizing that the intensity of the second resonant current is greater than the intensity of the first resonant current, and the two SAR hot spots generated by the main radiator 11 and the parasitic radiator 12 are relatively uniform in intensity, balancing the intensity distribution of the antenna assembly 100, avoiding excessively high local SAR intensity, and causing unnecessary power back-off of the antenna assembly 100.

[0176] The step of adjusting the difference between the electrical length of the main radiator 11 and the electrical length of the parasitic radiator 12 through the first tuning circuit T1 and the second tuning circuit T2 to adjust the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 includes:

[0177] The first tuning circuit T1 adjusts the electrical length of the main radiator 11 to be less than the electrical length of the parasitic radiator 12 adjusted by the second tuning circuit T2, so that the intensity of the first resonant current is less than the intensity of the second resonant current, and the intensity difference between the second resonant current and the first resonant current is greater than or equal to the first preset current intensity. This causes at least a first SAR hotspot to form on the side of the main radiator 11 facing the parasitic radiator 12, and at least a second SAR hotspot to form on the side of the main radiator 11 away from the parasitic radiator 12. The intensity difference between the first SAR hotspot and the second SAR hotspot is less than the first preset SAR intensity, thereby improving the uniformity of the SAR hotspot distribution.

[0178] When the electrical length of the main radiator 11 is greater than the electrical length of the parasitic radiator 12, the magnitude of the first resonant current on the main radiator 11 is greater than the magnitude of the second resonant current on the parasitic radiator 12.

[0179] When the electrical length of the main radiator 11 is less than the electrical length of the parasitic radiator 12, the magnitude of the first resonant current on the main radiator 11 is less than the magnitude of the second resonant current on the parasitic radiator 12.

[0180] Optionally, the electrical length of the parasitic radiator 12 is greater than that of the main radiator 11, the intensity of the second resonant current is greater than that of the first resonant current, and the two SAR hotspots generated by the main radiator 11 and the parasitic radiator 12 are relatively uniform in intensity, thus balancing the intensity distribution of the antenna assembly 100 and avoiding excessively high local SAR intensity, which could lead to unnecessary power back-off of the antenna assembly 100.

[0181] When the electrical length of the main radiator 11 is close to the electrical length of the parasitic radiator 12, the magnitude of the first resonant current on the main radiator 11 is close to the magnitude of the second resonant current on the parasitic radiator 12.

[0182] In the second implementation, please refer to Figure 27 The antenna assembly 100 further includes a matching circuit M. The matching circuit M is electrically connected between the signal source 20 and the feed point A. The matching circuit M is used to adjust the difference between the resonant frequency of the target resonant mode and the target center frequency to a preset frequency difference, wherein the resonant frequency of the target resonant mode is located within the effective frequency band of the target center frequency, which is the frequency corresponding to 1 / 4 wavelength of the main radiator, so that the intensity difference between the first resonant current and the second resonant current is a second preset current intensity.

[0183] Furthermore, the matching circuit M includes a switching unit and multiple matching branches. Each matching branch is a grounded inductor, capacitor, or other similar element. Each matching branch has a different impedance value. The controller switches the switching unit to different matching branches to adjust the resonant frequency of the target resonant mode. The controller is used to control the matching circuit M to adjust the resonant frequency of the target resonant mode.

[0184] Adjusting the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 to adjust the floor current intensity distribution on the reference floor 500, thereby controlling the SAR hotspot distribution of the antenna assembly 100, includes:

[0185] The difference between the resonant frequency of the target resonant mode and the target center frequency is adjusted by the matching circuit M, and the resonant frequency of the target resonant mode is located within the effective frequency band of the target center frequency, which is the frequency corresponding to 1 / 4 wavelength of the main radiator 11.

[0186] By adjusting the resonant frequency of the target resonant mode to the high-frequency side of the target center frequency through the matching circuit M, the intensity of the first resonant current is less than the intensity of the second resonant current, and the intensity difference between the second resonant current and the first resonant current is greater than or equal to the first preset current intensity. This causes at least a first SAR hot spot to be formed on the side of the main radiator 11 facing the parasitic radiator 12, and at least a second SAR hot spot to be formed on the side of the main radiator 11 away from the parasitic radiator 12. The intensity difference between the first SAR hot spot and the second SAR hot spot is less than the first preset SAR intensity. The two SAR hot spots generated by the main radiator 11 and the parasitic radiator 12 have relatively uniform in intensity, balancing the intensity distribution of the antenna assembly 100 and avoiding excessively high local SAR intensity, which would cause unnecessary power back-off of the antenna assembly 100.

[0187] In the EE radiation mode, the resonant frequency of the target resonant mode is located on the low-frequency side of the target center frequency or the target center frequency. The intensity of the first resonant current is greater than the intensity of the second resonant current. The intensity of the two SAR hotspots generated by the main radiator 11 and the parasitic radiator 12 is biased towards the side where the parasitic radiator 12 is located.

[0188] The main radiator 11 described above is a monopole antenna, and the antenna assembly 100 consists of a first monopole antenna 14 and a first parasitic radiator 13. The inventive concept of this application can also be extended to other antenna structures. For other embodiments, please refer to... Figure 28 and Figure 29 The main radiator 11 can also be an IFA antenna, that is, the antenna assembly 100 consists of a first IFA antenna 15 and a second parasitic radiator 16. For other embodiments, please refer to [link to relevant documentation]. Figure 30 The antenna assembly 100 can also be a second IFA antenna 17 and a third IFA antenna 18, etc. The EE radiation patterns formed on the main radiator and the parasitic radiator, and the current distribution on the reference ground 500, can be found in the relevant descriptions of the above embodiments.

[0189] In this application, the N78 band supported by the main radiator 11 is only an example. It can also be the B41 band, MHB, UHB, WIFI 2.4G, or any other band that needs to reduce SAR. The method of balancing SAR hotspots or adjusting the distribution of SAR hotspots can be adopted.

[0190] This application provides a method for controlling the distribution of SAR hotspots. It not only shows that SAR hotspots mainly originate from the contribution of strong currents on the reference floor 500 that are not canceled out by the resonant current on the radiator 10, but also that the parasitic radiator 12 has a current-cutting effect. When the EE mode current is mainly in the main radiator 11, the main current on the reference floor 500 is near the main radiator 11, and tends to be cut off when it flows to the parasitic position. By allocating the current ratio between the main radiator 11 and the parasitic radiator 12, the intensity of the SAR hotspot distribution can be controlled.

[0191] Please see Figure 31 , combined Figures 1-30 This application also provides a SAR hotspot distribution control device 600, applied to an electronic device 1000. The electronic device 1000 includes a reference ground plane 500 and an antenna assembly 100 disposed along a reference ground edge 510 of the reference ground plane 500. The antenna assembly 100 includes a radiator 10 and a signal source 20. The radiator 10 is electrically connected to the signal source 20 and the reference ground plane 500. The radiator 10 includes a main radiator 11 and a parasitic radiator 12. The main radiator 11 is electrically connected to the signal source 20. One end of the parasitic radiator 12 is coupled to the main radiator 11, and the other end of the parasitic radiator 12 is electrically connected to the reference ground plane 500. The signal source 20 of the antenna assembly 100 excites the main radiator 11 and the parasitic radiator 12 to jointly generate a target resonant mode supporting the target frequency band. The direction of the first resonant current of the target resonant mode on the main radiator 11 is the same as the direction of the second resonant current of the target resonant mode on the parasitic radiator 12.

[0192] The device includes an adjustment module 620. The adjustment module 620 adjusts the intensity difference between the first resonant current on the main radiator 11 and the second resonant current on the parasitic radiator 12 to adjust the ground current intensity distribution on the reference ground 500, thereby controlling the SAR hotspot distribution of the antenna assembly 100. The SAR hotspot distribution is related to the first resonant current, the second resonant current, and the ground current. For a detailed implementation, refer to step S100 described above.

[0193] Please see Figure 32 This application also provides an electronic device 1000, including a memory 700 and a processor 800. The memory 700 is used to store computer programs, and the processor 800 is used to call and run any of the SAR hotspot distribution control methods described in the embodiments.

[0194] The memory 700 can be a separate device independent of the processor 800, or it can be integrated into the processor 800.

[0195] It should be understood that the processor 800 in this application embodiment may be an integrated circuit chip with signal processing capabilities. The processor 800 includes the controller described above. In implementation, each step of the above method embodiment can be completed by the integrated logic circuit in the hardware of the processor 800 or by instructions in the form of software. The processor 800 described above may be a general-purpose processor 800, a digital signal processor 800 (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. It can implement or execute the various methods, steps, and logic block diagrams disclosed in the embodiments of this application. The general-purpose processor 800 may be a microprocessor 800 or any conventional processor 800, etc. The steps of the methods disclosed in the embodiments of this application can be directly embodied in the execution of the hardware decoding processor 800, or executed by a combination of hardware and software modules in the decoding processor 800. The software module can reside in a random access memory 700, flash memory, read-only memory 700, programmable read-only memory 700, electrically erasable programmable memory 700, registers, or other mature storage media in the art. This storage medium is located in memory 700, and the processor 800 reads information from memory 700 and, in conjunction with its hardware, completes the steps of the above method.

[0196] It is understood that the memory 700 in the embodiments of this application can be a volatile memory 700 or a non-volatile memory 700, or may include both volatile and non-volatile memory 700. The non-volatile memory 700 can be a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), or flash memory. The volatile memory 700 can be a random access memory (RAM) 700, which serves as an external cache. By way of example, but not limitation, many forms of RAM are available, such as Static RAM (SRAM), Dynamic RAM (DRAM), Synchronous DRAM (SDRAM), Double Data Rate SDRAM (DDR SDRAM), Enhanced Synchronous DRAM (ESDRAM), Synchronous Link DRAM (SLDRAM), and Direct Rambus RAM (DRRAM). It should be noted that the memory 700 of the systems and methods described herein is intended to include, but is not limited to, these and any other suitable types of memory 700.

[0197] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application, and such improvements and refinements are also considered to be within the protection scope of this application.

Claims

1. A method for regulating SAR hotspot distribution, characterized in that, The invention relates to an electronic device, which includes a reference ground plane and an antenna assembly disposed along a reference ground edge of the reference ground plane. The antenna assembly includes a radiator and a signal source. The radiator includes a main radiator and a parasitic radiator. The main radiator includes a first ground terminal, a feed point, and a first free terminal disposed sequentially. The parasitic radiator includes a second free terminal and a second ground terminal. The first free terminal and the second free terminal are coupled together. Both the first ground terminal and the second ground terminal are electrically connected to the reference ground plane. The signal source is electrically connected to the feed point. The signal source is used to excite the main radiator and the parasitic radiator to jointly generate a target resonant mode that supports the target frequency band. The direction of the first resonant current of the target resonant mode on the main radiator is the same as the direction of the second resonant current of the target resonant mode on the parasitic radiator. The first resonant current and the second resonant current flow to the reference ground to form at least a portion of the ground current. The method includes: The intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator is adjusted to regulate the ground current intensity distribution on the reference ground, thereby controlling the SAR hotspot distribution of the antenna assembly, wherein the SAR hotspot distribution is related to the first resonant current, the second resonant current, and the ground current.

2. The method as described in claim 1, characterized in that, Adjusting the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator to adjust the floor current intensity distribution on the reference floor, thereby regulating the SAR hotspot distribution of the antenna assembly, includes: The intensity of the first resonant current is adjusted to be greater than that of the second resonant current, and the intensity difference between the first resonant current and the second resonant current is greater than or equal to a first preset current intensity, so that the antenna assembly forms a first SAR hot spot and a second SAR hot spot. The first SAR hot spot is located on the side of the main radiator facing the parasitic radiator, and the second SAR hot spot is located on the side of the main radiator away from the parasitic radiator. The intensity difference between the first SAR hot spot and the second SAR hot spot is greater than or equal to a first preset SAR intensity.

3. The method as described in claim 2, characterized in that, In the step of adjusting the intensity of the first resonant current to be greater than the intensity of the second resonant current, and the intensity difference between the first resonant current and the second resonant current being greater than or equal to the first preset current intensity, When the length of the reference ground edge of the reference floor is 4 ± 1 / 8 times the electrical length of the radiator, and the distance between the ground terminal of the main radiator and one end of the reference ground edge of the reference floor is 1 / 4 wavelength ± 1 / 8 wavelength of the target frequency band, the intensity of the second SAR hotspot is greater than the intensity of the first SAR hotspot; or, When the length of the reference ground edge of the reference floor is 4 ± 1 / 8 times the electrical length of the radiator, and the distance between the ground terminal of the main radiator and the center position of the reference ground edge of the reference floor is less than or equal to 1 / 8 of the wavelength of the target frequency band, the intensity of the first SAR hot spot is greater than the intensity of the second SAR hot spot.

4. The method as described in claim 1, characterized in that, Adjusting the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator to adjust the floor current intensity distribution on the reference floor, thereby regulating the SAR hotspot distribution of the antenna assembly, includes: The intensity difference between the first resonant current and the second resonant current is adjusted to be less than the first preset current intensity, and the SAR hot spot of the antenna assembly is located on the side of the main radiator away from the parasitic radiator.

5. The method as described in claim 1, characterized in that, Adjusting the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator to adjust the floor current intensity distribution on the reference floor, thereby regulating the SAR hotspot distribution of the antenna assembly, includes: The intensity of the first resonant current is adjusted to be less than the intensity of the second resonant current, and the intensity difference between the second resonant current and the first resonant current is greater than or equal to the first preset current intensity, so that the antenna assembly forms a first SAR hot spot and a second SAR hot spot. The first SAR hot spot is located on the side of the main radiator facing the parasitic radiator, and the second SAR hot spot is located on the side of the main radiator away from the parasitic radiator. The intensity difference between the first SAR hot spot and the second SAR hot spot is less than the first preset SAR intensity.

6. The method as described in claim 5, characterized in that, In the step of adjusting the intensity of the first resonant current to be greater than the intensity of the second resonant current, and the intensity difference between the first resonant current and the second resonant current being greater than or equal to the first preset current intensity, When the length of the reference ground edge of the reference floor is 4 ± 1 / 8 times the electrical length of the radiator, and the distance between the ground terminal of the main radiator and one end of the reference ground edge of the reference floor is 1 / 4 wavelength ± 1 / 8 wavelength of the target frequency band, the intensity of the first SAR hot spot is greater than the intensity of the second SAR hot spot. When the length of the reference ground edge of the reference floor is 4 ± 1 / 8 times the electrical length of the radiator, and the distance between the ground terminal of the main radiator and the center position of the reference ground edge of the reference floor is less than or equal to 1 / 8 of the wavelength of the target frequency band, the intensity of the first SAR hot spot is less than the intensity of the second SAR hot spot.

7. The method as described in claim 1, characterized in that, The antenna assembly further includes a first tuning circuit and a second tuning circuit. The first ground terminal of the main radiator is electrically connected to the reference ground through the first tuning circuit, and the second ground terminal of the parasitic radiator is electrically connected to the reference ground through the second tuning circuit. Adjusting the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator to adjust the floor current intensity distribution on the reference floor, thereby regulating the SAR hotspot distribution of the antenna assembly, includes: The difference in electrical length between the main radiator and the parasitic radiator is adjusted by adjusting the electrical length difference through the first tuning circuit and / or through the second tuning circuit, thereby adjusting the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator.

8. The method as described in claim 7, characterized in that, The step of adjusting the difference in electrical length between the main radiator and the parasitic radiator by adjusting the difference in electrical length between the main radiator and the parasitic radiator through the first tuning circuit and / or through the second tuning circuit to adjust the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator includes: The electrical length of the main radiator is adjusted by the first tuning circuit and / or the electrical length of the parasitic radiator is adjusted by the second tuning circuit, so that the electrical length of the main radiator is less than the electrical length of the parasitic radiator, the intensity of the first resonant current is less than the intensity of the second resonant current, and the intensity difference between the intensity of the second resonant current and the first resonant current is greater than or equal to the intensity of the first preset current.

9. The method as described in claim 1, characterized in that, The antenna assembly further includes a matching circuit, which is electrically connected between the feed point and the signal source; Adjusting the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator to adjust the floor current intensity distribution on the reference floor, thereby regulating the SAR hotspot distribution of the antenna assembly, includes: The difference between the resonant frequency of the target resonant mode and the target center frequency is adjusted by a matching circuit, and the resonant frequency of the target resonant mode is located within the effective frequency band of the target center frequency, which is the frequency corresponding to 1 / 4 wavelength of the main radiator. The intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator is adjusted.

10. The method as described in claim 9, characterized in that, The step of adjusting the difference between the resonant frequency of the target resonant mode and the target center frequency through a matching circuit, wherein the resonant frequency of the target resonant mode is located within the effective frequency band of the target center frequency, and the target center frequency is the frequency corresponding to 1 / 4 wavelength of the main radiator, includes: The resonant frequency of the target resonant mode is adjusted to be on the high-frequency side of the target center frequency by the matching circuit, so that the intensity of the first resonant current is less than the intensity of the second resonant current, and the intensity difference between the second resonant current and the first resonant current is greater than or equal to the first preset current intensity.

11. The method according to any one of claims 1-10, characterized in that, Before adjusting the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator to adjust the floor current intensity distribution on the reference floor, thereby controlling the SAR hotspot distribution of the antenna assembly, the method further includes: Detect the SAR value within the target area of ​​the electronic device; When the SAR value in the target area of ​​the electronic device is greater than the second preset SAR intensity, the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator is adjusted to adjust the floor current intensity distribution on the reference floor, so that the SAR value in the target area of ​​the electronic device is reduced to less than the second preset SAR intensity, wherein the target area of ​​the electronic device is the area that the subject under test is in contact with or near.

12. A control device for SAR hotspot distribution, characterized in that, The invention relates to an electronic device, which includes a reference ground plane and an antenna assembly disposed along a reference ground edge of the reference ground plane. The antenna assembly includes a radiator and a signal source. The radiator includes a main radiator and a parasitic radiator. The main radiator includes a first ground terminal, a feed point, and a first free terminal disposed sequentially. The parasitic radiator includes a second free terminal and a second ground terminal. The first free terminal and the second free terminal are coupled together. Both the first ground terminal and the second ground terminal are electrically connected to the reference ground plane. The signal source is electrically connected to the feed point. The signal source is used to excite the main radiator and the parasitic radiator to jointly generate a target resonant mode that supports the target frequency band. The direction of the first resonant current of the target resonant mode on the main radiator is the same as the direction of the second resonant current of the target resonant mode on the parasitic radiator. The first resonant current and the second resonant current flow to the reference ground to form at least a portion of the ground current. The device includes: An adjustment module is used to adjust the intensity difference between the first resonant current on the main radiator and the second resonant current on the parasitic radiator to adjust the ground current intensity distribution on the reference ground, thereby controlling the SAR hotspot distribution of the antenna assembly, wherein the SAR hotspot distribution is related to the first resonant current, the second resonant current and the ground current.

13. An electronic device, characterized in that, The device includes a memory and a processor, wherein the memory is used to store a computer program, and the processor is used to call and run the computer program stored in the memory to perform the method as described in any one of claims 1 to 11.

14. An electronic device, characterized in that, The electronic device includes a reference ground plane and an antenna assembly. The antenna assembly is disposed along the reference ground edge of the reference ground plane. The antenna assembly includes a radiator and a signal source. The radiator includes a main radiator and a parasitic radiator. The main radiator includes a first ground terminal, a feed point and a first free terminal disposed sequentially. The parasitic radiator includes a second free terminal and a second ground terminal. The first free terminal and the second free terminal are coupled together. Both the first ground terminal and the second ground terminal are electrically connected to the reference ground plane. The signal source is electrically connected to the feed point. The signal source is used to excite the main radiator and the parasitic radiator to jointly generate a target resonant mode that supports the target frequency band. The direction of the first resonant current of the target resonant mode on the main radiator is the same as the direction of the second resonant current of the target resonant mode on the parasitic radiator. The first resonant current and the second resonant current flow to the reference ground to form at least a portion of the ground current. The intensity difference between the first resonant current and the second resonant current is configured as a second preset current intensity to reduce the Sar hotspot intensity of the target area of ​​the electronic device, wherein the Sar hotspot intensity of the target area of ​​the electronic device is related to the first resonant current, the second resonant current and the ground current.

15. The electronic device as claimed in claim 14, characterized in that, The first floor current flowing into the reference floor when the main radiator is in resonance includes a first current, a second current, and a first mirror current; the first current and the second current flow from the first ground terminal along the edge of the reference ground in opposite directions or converge to the first ground terminal from two opposite directions, and the first mirror current is located at the position of the reference floor directly opposite to the main radiator, and the direction of the first mirror current is opposite to the direction of the current on the main radiator; The second floor current flowing into the reference floor at resonance of the parasitic radiator includes a third current, a fourth current, and a second mirror current; The third current and the fourth current converge at the second grounding terminal from two opposite directions or flow from the second grounding terminal along the reference ground edge in opposite directions. The portion of the third current located on the side of the parasitic radiator away from the main radiator is opposite to the portion of the first current located on the side of the parasitic radiator away from the main radiator. The portion of the fourth current located on the side of the main radiator away from the parasitic radiator is opposite to the portion of the second current located on the side of the main radiator away from the parasitic radiator. The second mirror current is located at the position of the reference ground directly opposite to the parasitic radiator, and the direction of the second mirror current is opposite to the direction of the current on the parasitic radiator.

16. The electronic device as claimed in claim 14, characterized in that, The intensity of the first resonant current is greater than the intensity of the second resonant current, and the intensity difference between the first resonant current and the second resonant current is greater than or equal to the first preset current intensity. The antenna assembly forms a first SAR hotspot and a second SAR hotspot. The first SAR hotspot is located on the side of the main radiator facing the parasitic radiator, and the second SAR hotspot is located on the side of the main radiator away from the parasitic radiator. The intensity difference between the first SAR hotspot and the second SAR hotspot is greater than or equal to the first preset SAR intensity. The length of the reference ground edge of the reference floor is 4 ± 1 / 8 times the electrical length of the radiator; the distance between the first ground terminal and one end of the reference ground edge of the reference floor is 1 / 4 wavelength ± 1 / 8 wavelength of the target frequency band; the intensity of the first SAR hotspot is less than the intensity of the second SAR hotspot; the target region is located on the side of the main radiator facing the parasitic radiator; or, The length of the reference ground edge of the reference floor is 4 ± 1 / 8 times the electrical length of the radiator. The distance between the first ground terminal and the center position of the reference ground edge of the reference floor is less than or equal to 1 / 8 wavelength of the target frequency band. The intensity of the first SAR hot spot is greater than the intensity of the second SAR hot spot. The target area is located on the side of the main radiator away from the parasitic radiator.

17. The electronic device as claimed in claim 14, characterized in that, The difference between the intensity of the first resonant current and the intensity of the second resonant current is less than the intensity of the first preset current. The SAR hotspot of the antenna assembly is located on the side of the main radiator away from the parasitic radiator, and the target area is located on the side of the main radiator facing the parasitic radiator.

18. The electronic device as claimed in claim 14, characterized in that, The intensity of the first resonant current is less than the intensity of the second resonant current, and the intensity difference between the second resonant current and the first resonant current is greater than or equal to the first preset current intensity. The antenna assembly forms a first SAR hotspot and a second SAR hotspot. The first SAR hotspot is located on the side of the main radiator facing the parasitic radiator, and the second SAR hotspot is located on the side of the main radiator away from the parasitic radiator. The intensity difference between the first SAR hotspot and the second SAR hotspot is less than the first preset SAR intensity. The length of the reference ground edge of the reference floor is 4 ± 1 / 8 times the electrical length of the radiator; the distance between the first ground terminal and one end of the reference ground edge of the reference floor is 1 / 4 wavelength ± 1 / 8 wavelength of the target frequency band; the intensity of the first SAR hotspot is greater than the intensity of the second SAR hotspot; the target region is located on the side of the main radiator away from the parasitic radiator; or... The length of the reference ground edge of the reference floor is 4 ± 1 / 8 times the electrical length of the radiator. The distance between the first ground terminal and the center position of the reference ground edge of the reference floor is less than or equal to 1 / 8 wavelength of the target frequency band. The intensity of the first SAR hot spot is less than the intensity of the second SAR hot spot. The target area is located on the side of the main radiator facing the parasitic radiator.

19. The electronic device as claimed in claim 14, characterized in that, The antenna assembly further includes a first tuning circuit and a second tuning circuit. The first ground terminal of the main radiator is electrically connected to the reference ground through the first tuning circuit, and the second ground terminal of the parasitic radiator is electrically connected to the reference ground through the second tuning circuit. The first tuning circuit is used to adjust the electrical length of the main radiator, and the second tuning circuit is used to adjust the electrical length of the parasitic radiator, so that the intensity difference between the first resonant current and the second resonant current is a second preset current intensity.

20. The electronic device as claimed in claim 14, characterized in that, The antenna assembly further includes a matching circuit electrically connected between the feed point and the signal source. The matching circuit is used to adjust the difference between the resonant frequency of the target resonant mode and the target center frequency to a preset frequency difference, and the resonant frequency of the target resonant mode is located within the effective frequency band of the target center frequency, which is the frequency corresponding to 1 / 4 wavelength of the main radiator, so that the intensity difference between the first resonant current and the second resonant current is a second preset current intensity.

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