Laser

Abstract

The invention discloses a laser, and belongs to the technical field of photoelectricity. The laser comprises a diamond copper bottom plate, at least one diamond heat sink and at least one light-emitting chip. The heat conductivity coefficient of the diamond heat sink is high, and in the working process of the laser, heat generated by the light-emitting chip can be rapidly conducted to the diamond copper bottom plate through the diamond heat sink. Moreover, the heat conductivity coefficient of the composite material of the diamond and the copper is also high, so that heat conducted to the diamond copper bottom plate can be quickly dissipated, and the diamond copper bottom plate can conduct the heat to the outside for heat dissipation. Thus, when the laser works, heat emitted by the light-emitting chip in the laser can be rapidly dissipated, the working temperature of the light-emitting chip is low, the light-emitting effect of the light-emitting chip is good, it can be guaranteed that the light-emitting chip is not prone to being damaged due to too high temperature, and therefore it can be guaranteed that the reliability of the laser is high.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technology, and in particular to a laser. Background Art

[0002] With the development of optoelectronic technology, lasers are widely used.

[0003] The laser includes a light-emitting chip, which generates heat when emitting laser light. Moreover, as the light-emitting chip continues to emit light, the temperature of the light-emitting chip may exceed its normal operating temperature limit due to heat accumulation, which may affect the light-emitting effect of the light-emitting chip and may even damage the light-emitting chip.

[0004] Therefore, the reliability of current lasers is low. Summary of the invention

[0005] The embodiment of the present application provides a laser, which can solve the problem of low reliability of the laser in the prior art. The technical solution is as follows:

[0006] A laser is provided, characterized in that it comprises:

[0007] Diamond copper base plate;

[0008] At least one diamond heat sink located on one side of the diamond copper bottom plate, and each of the diamond heat sinks is fixedly connected to the diamond copper bottom plate;

[0009] and at least one light-emitting chip corresponding one-to-one to the at least one diamond heat sink, each of the light-emitting chips being located on a side of the corresponding diamond heat sink away from the diamond copper bottom plate, and each of the light-emitting chips being fixedly connected to the corresponding diamond heat sink;

[0010] Wherein, the thickness of the diamond heat sink ranges from 0.2 mm to 0.4 mm.

[0011] The beneficial effects brought by the technical solution provided by the embodiment of the present application include at least:

[0012] A laser includes: a diamond copper base plate, at least one diamond heat sink and at least one light-emitting chip. The thermal conductivity of the diamond heat sink is relatively high. During the operation of the laser, the heat generated by the light-emitting chip can be quickly conducted to the diamond copper base plate through the diamond heat sink. In addition, the thermal conductivity of the composite material of diamond and copper is also relatively high. Therefore, the heat conducted to the diamond copper base plate can be quickly dissipated, and the diamond copper base plate can conduct the heat to the outside for heat dissipation. In this way, when the laser is working, the heat emitted by the light-emitting chip in the laser can be quickly dissipated, so that the operating temperature of the light-emitting chip is relatively low, thereby making the light-emitting effect of the light-emitting chip better, and it can also ensure that the light-emitting chip is not easily damaged due to excessive temperature, thereby ensuring the high reliability of the laser. In addition, the thickness of the diamond heat sink ranges from 0.2 mm to 0.4 mm. The diamond heat sink within this thickness range can not only allow all the lasers emitted by the light-emitting chip to be directed toward the reflective surface of the reflective prism, thereby increasing the light output efficiency of the laser, but also ensure that the diamond heat sink has a high efficiency in conducting heat to the light-emitting chip, thereby further improving the heat dissipation efficiency of the light-emitting chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0014] Figure 1 is a side view of a laser provided in an embodiment of the present application;

[0015] Figure 2 is a light path diagram of laser light emitted by a light-emitting chip in a laser provided in an embodiment of the present application;

[0016] Figure 3 This is a light path diagram of a laser emitted by a light-emitting chip when the thickness of a diamond heat sink provided in an embodiment of the present application is small;

[0017] Figure 4 is a light path diagram of laser light emitted by another light-emitting chip provided in an embodiment of the present application;

[0018] Figure 5 It is a schematic diagram of a light-emitting chip fixed on a diamond heat sink provided in an embodiment of the present application;

[0019] Figure 6 is a schematic diagram of simulating the heating of a light-emitting chip provided in an embodiment of the present application;

[0020] Figure 7is a schematic structural diagram of a diamond heat sink provided in an embodiment of the present application;

[0021] Figure 8 is a top view of another laser provided in an embodiment of the present application;

[0022] Fig. 9 yes Figure 8 A cross-sectional view of the laser shown at AA';

[0023] Fig.10 is a cross-sectional schematic diagram of another laser provided in an embodiment of the present application;

[0024] Fig.11 It is a cross-sectional schematic diagram of another laser provided in an embodiment of the present application. DETAILED DESCRIPTION

[0025] In order to make the objectives, technical solutions and advantages of the present application clearer, the implementation methods of the present application will be further described in detail below with reference to the accompanying drawings.

[0026] Please refer to Figure 1 , Figure 1 The laser 000 may include: a diamond copper base plate 100 , at least one diamond heat sink 200 , and at least one light emitting chip 300 .

[0027] At least one diamond heat sink 200 in the laser 000 may be located on one side of the diamond copper base plate 100 , and each diamond heat sink 200 is fixedly connected to the diamond copper base plate 100 .

[0028] At least one light-emitting chip 300 in the laser 000 may correspond one-to-one to at least one diamond heat sink 200 , each light-emitting chip 300 may be located on a side of the corresponding diamond heat sink 200 away from the diamond copper base plate 100 , and each light-emitting chip 300 may be fixedly connected to the corresponding diamond heat sink 200 .

[0029] It should be noted that the diamond heat sink 200 in the laser 000 refers to a heat sink made of diamond, and the diamond copper bottom plate 100 in the laser 000 refers to a bottom plate made of a composite material of diamond and copper.

[0030] It should also be noted that the thermal conductivity of diamond is high, and its thermal conductivity is high. Here, the thermal conductivity of the material can be reflected by the thermal conductivity. The higher the thermal conductivity, the stronger the thermal conductivity of the material. The unit of thermal conductivity is watt / meter·K, which can also be written as W / (m·k). The thermal conductivity of diamond is as high as 2000W / (m·k), so the thermal conductivity of the heat sink made of diamond (that is, the diamond heat sink 200) is high. In this way, during the operation of the laser 000, the heat generated by the light-emitting chip 300 can be quickly conducted through the diamond heat sink 200 in a direction perpendicular to the diamond copper bottom plate 100, and can be conducted to the diamond copper bottom plate 100. In addition, the thermal conductivity of the composite material of diamond and copper is also high, so the heat conducted to the diamond copper bottom plate 100 can be quickly dispersed, and the diamond copper bottom plate 100 can conduct the heat to the outside world for heat dissipation. In this way, when the laser 000 is working, the heat emitted by the light-emitting chip 300 in the laser 000 can be quickly dissipated, so that the operating temperature of the light-emitting chip 300 is relatively low, thereby making the light-emitting effect of the light-emitting chip 300 better, and it can also ensure that the light-emitting chip 300 is not easily damaged due to excessive temperature, thereby ensuring that the reliability of the laser 000 is relatively high.

[0031] Optional, such as Figure 1 As shown, the laser 000 may further include: at least one reflective prism 400 located on one side of the diamond copper base plate 100. Each reflective prism 400 in the laser 000 may be fixedly connected to the diamond copper base plate 100, and at least one reflective prism 400 may correspond to at least one light-emitting chip 300 one by one, and the light-emitting surface of each light-emitting chip 300 may face the reflective surface S of the corresponding reflective prism 400.

[0032] The side of the reflective prism 400 facing the diamond copper bottom plate 100 is the bottom surface D of the reflective prism 400 . The bottom surface D of the reflective prism 400 can be fixed on the diamond copper bottom plate 100 , and the angle between the bottom surface D of the reflective prism 400 and the reflective surface 400 is an acute angle.

[0033] In this case, please refer to Figure 2 , Figure 2 000 is a light path diagram of a laser emitted by a light-emitting chip in a laser provided in an embodiment of the present application. The light-emitting chip 300 in the laser 000 emits laser light, which can be directed toward the corresponding reflection surface S of the reflection prism 400 and can be reflected by the reflection surface S of the reflection prism 400. Here, the laser light reflected by the reflection surface S of the reflection prism 400 can be transmitted in a direction away from the diamond copper bottom plate 100.

[0034] It should be noted that the cross-sectional shape of the reflective prism 400 perpendicular to the diamond copper bottom plate 100 can be a right-angled trapezoid. That is, the reflective prism 400 can be a prism with a right-angled trapezoidal cross-sectional shape. In this way, it is not only easy to process the reflective prism 400, but also it is possible to ensure that the difficulty of fixing the reflective cold processing prism 400 on the diamond copper bottom plate 100 is relatively low.

[0035] In the present application, since the reflective prism 400 in the laser 000 is directly fixed on the diamond copper base plate 100, and the light-emitting chip 300 in the laser 000 needs to be fixed on the diamond copper base plate 100 through the diamond heat sink 200, and the laser emitted by the light-emitting chip 300 in the laser 000 is usually in a divergent state. Therefore, the thickness h1 of the diamond heat sink 200 in the laser 000 will affect the light extraction efficiency of the light-emitting chip 300. Here, in the direction of the optical axis of each light-emitting chip 300 in the laser 000, the distance d between the light-emitting chip 300 and the reflective surface S of the reflective prism 400 will also affect the light extraction efficiency of the light-emitting chip 300. The following embodiments are all described by taking the distance d1 between the light-emitting chip 300 and the reflective surface S of the reflective prism 400 in the direction of the optical axis of each light-emitting chip 300 in the laser 000 as an example: 0.3 mm to 0.5 mm.

[0036] In this case, if the thickness h1 of the diamond heat sink 200 is too small, for example, the thickness h1 of the diamond heat sink 200 is less than 0.2 mm. Figure 3 , Figure 3 This is a light path diagram of the laser emitted by the light emitting chip when the thickness of the diamond heat sink is relatively small, provided in an embodiment of the present application. The laser emitted by the light emitting chip 300 in the laser 000 will not be completely emitted to the reflection surface S of the reflection prism 400. Among the lasers emitted by the light emitting chip 300, a part of the laser will be directly emitted to the diamond copper bottom plate 100, and this part of the laser cannot be reflected by the reflection surface S of the reflection prism 400, resulting in a part of the laser in the light emitting chip 300 being unable to be normally emitted from the laser 000, thereby resulting in a low light extraction efficiency of the laser 000.

[0037] Therefore, the thickness h1 of the diamond heat sink 200 in the embodiment of the present application cannot be too small. For example, the thickness h1 of the diamond heat sink 200 needs to be greater than or equal to 0.2 mm. Figure 4 As shown, Figure 4This is a light path diagram of a laser emitted by another light-emitting chip provided in an embodiment of the present application. When the thickness h1 of the diamond heat sink 200 is greater than or equal to 0.2 mm, all the lasers emitted by the light-emitting chip 300 in the laser 000 can be directed toward the reflecting surface S of the reflecting prism 400, so that the reflecting surface S of the reflecting prism 400 can emit all the lasers emitted by the light-emitting chip 300, thereby making most of the lasers emitted by the light-emitting chip 300 can be emitted from the laser 000, and the light extraction efficiency of the laser 000 is relatively high.

[0038] In addition, if the thickness h1 of the diamond heat sink 200 is large, then during the operation of the laser 000, the heat generated by the light-emitting chip 300 needs to pass through a longer heat conduction path to be conducted to the diamond copper base plate 100, resulting in a low efficiency in conducting the heat of the light-emitting chip 300.

[0039] For this reason, the thickness h1 of the diamond heat sink 200 in the embodiment of the present application cannot be too large. For example, the thickness h1 of the diamond heat sink 200 needs to be less than or equal to 0.4 mm. In this case, the heat conduction path through which the diamond heat sink 200 conducts the heat generated by the light-emitting chip 300 to the diamond copper base plate 100 is shorter, so that the diamond heat sink 200 conducts the heat of the light-emitting chip 300 more efficiently. In this way, the heat dissipation efficiency of the light-emitting chip 300 can be further improved through the cooperation of the diamond heat sink 200 and the diamond copper base plate 100.

[0040] Therefore, in the embodiment of the present application, the thickness h1 of the diamond heat sink 200 is in the range of 0.2 mm to 0.4 mm. The diamond heat sink 200 within this thickness h1 range can not only allow all the lasers emitted by the light-emitting chip 300 to be directed toward the reflecting surface S of the reflecting prism 400, thereby increasing the light extraction efficiency of the laser 000, but also ensure that the diamond heat sink 200 is more efficient in conducting heat to the light-emitting chip 300.

[0041] In summary, the laser provided in the embodiment of the present application comprises: a diamond copper base plate, at least one diamond heat sink and at least one light-emitting chip. The thermal conductivity of the diamond heat sink is relatively high. During the operation of the laser, the heat generated by the light-emitting chip can be quickly conducted to the diamond copper base plate through the diamond heat sink. In addition, the thermal conductivity of the composite material of diamond and copper is also relatively high. For this reason, the heat conducted to the diamond copper base plate can be quickly dispersed, and the diamond copper base plate can conduct the heat to the outside world for heat dissipation. In this way, when the laser is working, the heat emitted by the light-emitting chip in the laser can be quickly dissipated, so that the operating temperature of the light-emitting chip is relatively low, thereby making the light-emitting effect of the light-emitting chip better, and it can also ensure that the light-emitting chip is not easily damaged due to excessive temperature, thereby ensuring that the reliability of the laser is relatively high. In addition, the thickness of the diamond heat sink ranges from 0.2 mm to 0.4 mm. The diamond heat sink within this thickness range can not only allow all the lasers emitted by the light-emitting chip to be directed toward the reflective surface of the reflective prism, thereby increasing the light output efficiency of the laser, but also ensure that the diamond heat sink has a high efficiency in conducting heat to the light-emitting chip, thereby further improving the heat dissipation efficiency of the light-emitting chip.

[0042] In the embodiment of the present application, since the laser beam emitted by the light emitting chip 300 is a beam diverging in the shape of a light cone, Figure 2 As shown, the end of the light emitting chip 300 facing the reflective prism 400 needs to protrude from the diamond heat sink 200 to ensure that the laser beam emitted by the light emitting chip 300 will not be directed toward the diamond heat sink 200, thereby improving the efficiency of the laser emitted by the light emitting chip 300 to be directed toward the reflective prism 400. Here, in the optical axis direction of the light emitting chip 300, the length d2 of the light emitting chip 300 protruding relative to the diamond heat sink 200 ranges from 5 microns to 10 microns. In this way, it can be ensured that all the lasers emitted by the light emitting chip 300 can be directed toward the reflective prism 400, and it can also be ensured that the contact area between the light emitting chip 300 and the diamond heat sink 200 is large, so as to ensure that the heat conduction efficiency of the diamond heat sink 200 to the light emitting chip 300 is high.

[0043] Optional, such as Figure 1 and Figure 2 As shown, since the diamond copper bottom plate 100 in the laser 000 is made of a composite material of diamond and copper, and the hardness of diamond is relatively large. Therefore, compared with a bottom plate made of oxygen-free copper, the hardness of the diamond copper bottom plate 100 is relatively large. In this way, the thickness h2 of the diamond copper bottom plate 100 does not need to be too thick, so that the diamond copper bottom plate 100 can play a good supporting effect on the light-emitting chip 300, and effectively reduce the heat conduction path of the diamond copper bottom plate 100.

[0044] For example, the thickness h2 of the diamond copper bottom plate 100 in the laser 000 ranges from 1 mm to 4 mm. In this way, after the diamond heat sink 200 conducts the heat generated by the light-emitting chip 300 to the diamond copper bottom plate 100, the diamond copper bottom plate 100 can conduct the heat to the outside for heat dissipation through a shorter heat conduction path. In this way, the heat dissipation efficiency of the light-emitting chip 300 can be further improved through the cooperation of the diamond heat sink 200 and the diamond copper bottom plate 100.

[0045] In the embodiment of the present application, the light emitting chip 300 in the laser 000 can be fixed on the diamond heat sink 200 by solder. For example, Figure 5 As shown, Figure 5 Schematic diagram of a light-emitting chip fixed on a diamond heat sink provided in an embodiment of the present application. The laser 000 may also include: a solder layer 500 located on the side of the diamond heat sink 200 away from the diamond copper base plate 100, and the diamond heat sink 200 may be fixedly connected to the corresponding light-emitting chip 300 through the solder layer 500. Here, the solder layer 500 may weld the light-emitting chip 300 after melting, so that the light-emitting chip 300 may be fixed on the diamond heat sink 200.

[0046] It should be noted that each diamond heat sink 200 in the laser 000 is provided with a solder layer 500 on the side facing away from the diamond copper base plate 100 , so that each light-emitting chip 300 can be fixed on the corresponding diamond heat sink 200 through the solder layer 500 on the corresponding diamond heat sink 200 .

[0047] Optionally, the material of the solder layer 500 may be a gold-tin alloy, wherein the proportion of gold may range from 75% to 80%.

[0048] In the present application, the light-emitting layer in the light-emitting chip 300 needs to be grown on a substrate, and the material of the substrate in the light-emitting chip 300 is usually gallium arsenide (GaAs) or gallium nitride (GaN), and the substrate in the light-emitting chip 300 needs to be fixed on the diamond copper base plate 100 through the solder layer 500. Since there is a certain difference between the thermal expansion coefficient of the material of the substrate in the light-emitting chip 300 and the expansion coefficient of the solder layer 500, the expansion degree of the light-emitting chip 300 and the solder layer 500 when heated is different. During the operation of the laser 000, if the operating temperature of the light-emitting chip 300 is high, the heat generated by the light-emitting chip 300 will make the difference between the expansion deformation of the light-emitting chip 300 and the expansion deformation of the solder layer 500 larger, resulting in greater thermal stress between the light-emitting chip 300 and the solder layer 500. The thickness of the solder layer 500 directly affects the operating temperature of the light emitting chip 300, which in turn affects the thermal expansion of the light emitting chip 300 and the solder layer 500, and ultimately affects the magnitude of the thermal stress generated between the light emitting chip 300 and the solder layer 500. Therefore, by optimizing the thickness of the solder layer 500, the thermal stress generated between the light emitting chip 300 and the solder layer 500 will not be too large.

[0049] For example, Figure 6 As shown, Figure 6 : is a schematic diagram of simulating the heating of a light-emitting chip provided by an embodiment of the present application. Assume that the thickness of the diamond heat sink 200 is 0.28 mm; the length of the light-emitting chip 300 is 1.5 mm, the width is 0.3 mm, and the thickness is 0.1 mm; the thermal power of the light-emitting chip 300 is 5 watts; and the light-emitting chip 300 is arranged at the center of the diamond heat sink 200. Then, when the thickness of the solder layer 500 is 2 microns, the highest operating temperature of the light-emitting chip 300 is 35.071°C, and the maximum thermal stress between the light-emitting chip 300 and the solder layer 500 is 6.285×10 7 N / m 2 (N / m2); when the thickness of the solder layer 500 is 4 μm, the maximum operating temperature of the light emitting chip 300 is 35.448°C, and the maximum thermal stress between the light emitting chip 300 and the solder layer 500 is 7.050×10 7 N / m 2 When the thickness of the solder layer 500 is 6 μm, the maximum operating temperature of the light emitting chip 300 is 35.822°C, and the maximum thermal stress between the light emitting chip 300 and the solder layer 500 is 8.021×10 7 N / m 2 .

[0050] It can be seen that the thermal conductivity of the solder layer 500 is low. As the thickness of the solder layer 500 increases, the heat generated by the light emission of the light-emitting chip 300 is difficult to be immediately dissipated, resulting in a high overall operating temperature of the light-emitting chip 300, which in turn leads to a large thermal stress between the light-emitting chip 300 and the solder layer 500. In addition, if the thickness of the solder layer 500 is too thick, the solder between the light-emitting chip 300 and the diamond heat sink 200 may also overflow. The smaller the thickness of the solder layer 500, the lower the overall operating temperature of the light-emitting chip 300, and the smaller the thermal stress between the light-emitting chip 300 and the solder layer 500. However, if the thickness of the solder layer 500 is too small, the welding firmness of the light-emitting chip 300 and the solder layer 500 may be low, resulting in the undesirable phenomenon of voids inside the solder layer 500, which in turn leads to a low fixation firmness between the light-emitting chip 300 and the diamond heat sink 200.

[0051] To this end, the thickness of the solder layer 500 cannot be too thick, and the thickness of the solder layer 500 needs to be less than or equal to 5 microns; the thickness of the solder layer 500 cannot be too thin, and the thickness of the solder layer 500 needs to be greater than or equal to 2 microns. That is, the thickness of the solder layer 500 ranges from 2 microns to 5 microns. In this way, it can be ensured that the light-emitting chip 300 can be firmly fixed on the diamond heat sink 200 through the solder layer 500, and it can also be ensured that the heat generated by the light-emitting chip 300 can be immediately dissipated through the diamond heat sink 200, so that the overall operating temperature of the light-emitting chip 300 is low, and then the thermal response between the light-emitting chip 300 and the solder layer 500 is small.

[0052] It should be noted that Figure 6 The example of the central position of the light-emitting chip on the diamond heat sink is used to illustrate the heating mode of the light-emitting chip. In actual products, the light-emitting end of the light-emitting chip needs to protrude from the diamond heat sink.

[0053] Optional, please refer to Figure 7 , Figure 7 The laser 000 may further include: a first metal layer 600 located between the solder layer 500 and the diamond heat sink 200 , and a second metal layer 700 located between the diamond heat sink 200 and the diamond copper bottom plate 100 .

[0054] For example, the first metal layer 600 between the solder layer 500 and the diamond heat sink 200 in the laser 000 may include a stacked titanium layer 601, a platinum layer 602 and a gold layer 603. The titanium layer 601 in the first metal layer 600 may be fixedly connected to the surface of the diamond heat sink 200.

[0055] In this way, the gold layer 603 in the first metal layer 600 is the metal layer closest to the light-emitting chip 300 in the first metal layer 600, so that the gold layer 603 in the first metal layer 600 can be used as a conductive layer and electrically connected to the electrode (which can be a positive electrode or a negative electrode) of the light-emitting chip 300. Here, since a solder layer 500 is also provided between the gold layer 603 in the first metal layer 600 and the light-emitting chip 300, and the material of the solder layer 500 is a gold-tin alloy. Therefore, the gold layer 603 in the first metal layer 600 can be connected to a power source through a wire to achieve the purpose of the power supply supplying power to the light-emitting chip 300 through the gold layer 603 and the gold-tin alloy in the first metal layer 600. Optionally, the gold layer 603 in the first metal layer 600 can also have strong corrosion resistance, so that the gold layer 603 in the first metal layer 600 can protect the light-emitting chip 300 and prevent the electrode of the light-emitting chip 300 from being oxidized.

[0056] The platinum layer 602 and the titanium layer 601 in the first metal layer 600 can both be used as adhesive layers to fix the gold layer 603 in the first metal layer 600 on the diamond heat sink 200 .

[0057] It should be noted that it is difficult to directly plate the gold layer 603 on the diamond heat sink 200. Therefore, in the present application, the titanium layer 601 and the platinum layer 602 are first plated in sequence on the side of the diamond heat sink 200 away from the diamond copper base plate 100, and then the gold layer 603 is plated on the platinum layer 602, thereby ensuring that the gold layer 603 can be firmly set on the diamond heat sink 200. In addition, the platinum layer 602 and the titanium layer 601 in the first metal layer 600 both have high thermal conductivity, so the heat generated by the light-emitting chip 300 can be better conducted to the diamond heat sink 200 through the first metal layer 600.

[0058] Optionally, the thickness of the first metal layer 600 may be less than 1 micrometer to ensure that after the heat generated by the light-emitting chip 300 is conducted to the first metal layer 600 , the first metal layer 600 can quickly conduct the heat to the diamond heat sink 200 .

[0059] The second metal layer 700 in the laser 000 may also include: a stacked titanium layer 701, a platinum layer 702 and a gold layer 703. The titanium layer 701 in the first metal layer 700 may also be fixedly connected to the surface of the diamond heat sink 200.

[0060] Here, each metal layer in the second metal layer 700 between the diamond heat sink 200 and the diamond copper bottom plate 100 in the laser 000 can be used as an adhesive layer to fix the diamond heat sink 200 on the diamond copper bottom plate 100 .

[0061] It should be noted that it is difficult to directly fix the diamond heat sink 200 on the diamond copper bottom plate 100. For this reason, the second metal layer 700 needs to be provided on the side of the diamond heat sink 200 close to the diamond copper bottom plate 100 in the present application, so that the diamond heat sink 200 can be fixed on the diamond copper bottom plate 100 through the second metal layer 700. In addition, since it is relatively easy to fix the gold layer 703 to the diamond copper bottom plate 100, and relatively easy to fix the gold layer 703 to the diamond heat sink 200, and relatively easy to fix the titanium layer 701 to the diamond heat sink 200, the platinum layer 702 can be used as a transition layer between the gold layer 703 and the titanium layer 701, and can be better combined with the gold layer 703 and the titanium layer 701. Therefore, when the titanium layer 701, the platinum layer 702 and the gold layer 703 in the second metal layer 700 are respectively plated on the side of the diamond heat sink 200 close to the diamond copper base plate 100, not only the difficulty of fixing the diamond heat sink 200 on the diamond copper base plate 100 can be reduced, but also the diamond heat sink 200 can be ensured to be firmly set on the diamond copper base plate 100.

[0062] In addition, the titanium layer 701, the platinum layer 702 and the gold layer 703 in the second metal layer 700 all have high thermal conductivity. Therefore, after the heat generated by the light-emitting chip 300 is conducted to the diamond heat sink 200, the heat conducted to the diamond heat sink 200 can be better conducted to the diamond copper base plate 100 through the second metal layer 700.

[0063] Optionally, the thickness of the second metal layer 700 may be less than 1 micron to ensure that the heat conducted to the diamond heat sink 200 can be quickly conducted to the diamond copper base plate 10 by the second metal layer 700 after being conducted to the second metal layer 700 .

[0064] In the embodiment of the present application, the thickness of the titanium layer 601 in the first metal layer 600 and the titanium layer 701 in the second metal layer 700 may be equal, the thickness of the platinum layer 602 in the first metal layer 600 and the platinum layer 702 in the second metal layer 700 may be equal, and the thickness of the gold layer 603 in the first metal layer 600 and the gold layer 703 in the second metal layer 700 may be equal. Of course, in other possible implementations, the thickness of the titanium layer 601 in the first metal layer 600 and the titanium layer 701 in the second metal layer 700 may also be different, the thickness of the platinum layer 602 in the first metal layer 600 and the platinum layer 702 in the second metal layer 700 may also be different, and the thickness of the gold layer 603 in the first metal layer 600 and the gold layer 703 in the second metal layer 700 may also be different. The embodiment of the present application does not limit this.

[0065] For example, the thickness range of the titanium layer in the first metal layer 600 and the second metal layer 700 can be 0.04 microns to 0.08 microns, the thickness range of the platinum layer in the first metal layer 600 and the second metal layer 700 can be 0.1 microns to 0.3 microns, and the thickness range of the gold layer in the first metal layer 600 and the second metal layer 700 can be 0.4 microns to 0.8 microns.

[0066] In the embodiment of the present application, the bottom surface D of the reflective prism 400 in the laser 000 may also be plated with a gold layer, and the reflective prism 400 may be fixed on the diamond copper bottom plate 100 through the gold layer. Here, since the gold layer plated on the bottom surface of the reflective prism 400 has good thermal conductivity, even if the temperature of the reflective prism 400 increases after the laser emitted by the light-emitting chip 3000 irradiates the reflective prism 400, it can be ensured that the reflective prism 400 can quickly conduct the heat to the diamond copper bottom plate 100 through the gold layer set on the bottom surface D for heat dissipation. To this end, the reflective prism 400 can also be cooled through the diamond copper bottom plate 100 to ensure that the reflective prism 400 will not produce a large expansion deformation due to excessive temperature, so that the laser emitted by the light-emitting chip 300 can always be irradiated on the reflection surface S of the reflective prism 400, thereby ensuring that the light output effect of the laser 000 is good.

[0067] Optionally, the above embodiments are schematically described by taking the laser including one diamond heat sink 200 and one light emitting chip 300 as an example. When the laser 000 includes multiple diamond heat sinks 200 and multiple light emitting chips 300, as shown in FIG. Figure 8 As shown, Figure 8 It is a top view of another laser provided by an embodiment of the present application. In the laser 000, multiple diamond heat sinks 200 can be arranged in an array in multiple rows and columns, and each diamond heat sink 200 is fixed with a corresponding light-emitting chip 300 on the side away from the diamond copper bottom plate 100. Here, the number of reflective prisms 400 in the laser 000 can also be multiple, and each reflective prism 400 can be fixed on the side of the diamond copper bottom plate 100 facing the diamond heat sink 200, and the multiple reflective prisms 400 can correspond to the multiple light-emitting chips 300 one by one, and each reflective prism 400 can be located on the side facing the light-emitting surface of the corresponding light-emitting chip 300, so that the reflective surface of each reflective prism 400 can reflect the laser emitted by the corresponding light-emitting chip 300.

[0068] In the embodiments of the present application, Figure 8 and Fig. 9 As shown, Fig. 9 yes Figure 8The laser 000 is shown in a cross-sectional view at AA'. The laser 000 may also include: a frame 800 fixedly connected to one side of the diamond copper base plate 100. Each diamond heat sink 200, each reflective prism 400 and the frame 800 in the laser 000 may be fixed on the same side of the diamond copper base plate 100, and each diamond heat sink 200, each light-emitting chip 300 and each reflective prism 400 in the laser 000 may be located in the area surrounded by the frame 800.

[0069] Here, the structure obtained by fixing the diamond copper bottom plate 100 and the frame 800 in the laser 000 can be called a tube shell. Optionally, the material of the frame 800 and the diamond copper bottom plate 100 can be the same or different. For example, when the frame 800 is also made of a composite material of diamond and copper, the diamond copper bottom plate 100 and the frame 800 can be an integrally formed structure. Of course, the diamond copper bottom plate 100 and the frame 800 can also be two independent structures, and the two can be fixed by welding.

[0070] Optional, such as Figure 8 As shown, the laser 000 may further include: a plurality of electrode pins 900 fixed to the frame 800. The electrode pins 900 may communicate the inside and outside of the enclosed area of ​​the frame 800, and the electrode pins 900 may be electrically connected to the light-emitting chip 300 to deliver current to the light-emitting chip 300. For example, the electrode pins 900 may be a metal columnar structure. The frame 800 may have a plurality of mounting holes corresponding to the plurality of electrode pins 900, each electrode pin 900 may be inserted into the corresponding mounting hole, and the electrode pins 900 may be fixed to the frame 800 by a sealing material, and the mounting holes may be filled and sealed to ensure the sealing of the accommodating space.

[0071] In the embodiments of the present application, Fig. 9 As shown, the frame 800 in the laser 000 has a light opening K on one side away from the diamond copper bottom plate 100. After the reflective surface S of each reflective prism 400 in the laser 000 reflects the laser emitted by the corresponding light emitting chip 300, the reflected laser can be emitted toward the light opening K of the frame 800, so that the laser can be emitted from the laser 000 through the light opening K.

[0072] Optional, please refer to Fig.10 , Fig.10 The laser 000 may further include: a light-transmitting sealing component 1100 located at the light opening K of the frame 800 , and a collimating lens 1200 located on the side of the light-transmitting sealing component 1100 away from the diamond copper bottom plate 100 .

[0073] The light-transmitting sealing component 1100 can be fixed to the frame 800 to seal the accommodation space enclosed by the diamond copper bottom plate 100 and the frame 800 to prevent external moisture and other substances from damaging the light-emitting chip 300. The light-emitting chip 300 can emit a laser to the corresponding reflective prism 50 under the action of the current, and the reflective prism 50 can reflect the received laser to the light-transmitting sealing component 1100. The laser passes through the light-transmitting sealing component 1100 and is emitted to the collimating lens 1200. The collimating lens 1200 can collimate the received laser and then emit it.

[0074] Optionally, the material of the light-transmitting sealing component 1100 may be BK7 glass, sapphire, quartz, etc. The collimating lens 1200 may be a free-form surface lens, an aspherical lens, or a Fresnel lens.

[0075] It should be noted that there are many ways to connect the light-transmitting sealing component 1100 and the frame 800. The present application embodiment will take the following two cases as examples for illustration:

[0076] The first case, such as Fig.10 As shown, the light-transmitting sealing component 1100 can be fixed to the frame 800 by using gold-tin solder or sealing glue.

[0077] The second case, such as Fig.11 As shown, Fig.11 1 is a cross-sectional schematic diagram of another laser provided in an embodiment of the present application. The light-transmitting sealing component 1100 can also be fixed to the frame 800 by parallel seam welding. The light-transmitting sealing component 1100 can include a light-transmitting sealing layer 1101 and a sealing frame 1102. The light-transmitting sealing layer 1101 is fixed to the sealing frame 1102. The sealing frame 1102 can be fixed to the frame 800 by parallel seam welding.

[0078] In summary, the laser provided in the embodiment of the present application comprises: a diamond copper base plate, at least one diamond heat sink and at least one light-emitting chip. The thermal conductivity of the diamond heat sink is relatively high. During the operation of the laser, the heat generated by the light-emitting chip can be quickly conducted to the diamond copper base plate through the diamond heat sink. In addition, the thermal conductivity of the composite material of diamond and copper is also relatively high. For this reason, the heat conducted to the diamond copper base plate can be quickly dispersed, and the diamond copper base plate can conduct the heat to the outside world for heat dissipation. In this way, when the laser is working, the heat emitted by the light-emitting chip in the laser can be quickly dissipated, so that the operating temperature of the light-emitting chip is relatively low, thereby making the light-emitting effect of the light-emitting chip better, and it can also ensure that the light-emitting chip is not easily damaged due to excessive temperature, thereby ensuring that the reliability of the laser is relatively high. In addition, the thickness of the diamond heat sink ranges from 0.2 mm to 0.4 mm. The diamond heat sink within this thickness range can not only allow all the lasers emitted by the light-emitting chip to be directed toward the reflective surface of the reflective prism, thereby increasing the light output efficiency of the laser, but also ensure that the diamond heat sink has a high efficiency in conducting heat to the light-emitting chip, thereby further improving the heat dissipation efficiency of the light-emitting chip.

[0079] In the present application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance. The term "plurality" refers to two or more than two, unless otherwise clearly defined.

[0080] The above description is only an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A laser, characterized in that: include: Diamond copper base plate; At least one diamond heat sink located on one side of the diamond copper bottom plate, and each of the diamond heat sinks is fixedly connected to the diamond copper bottom plate; and at least one light-emitting chip corresponding one-to-one to the at least one diamond heat sink, each of the light-emitting chips being located on a side of the corresponding diamond heat sink away from the diamond copper bottom plate, and each of the light-emitting chips being fixedly connected to the corresponding diamond heat sink; Wherein, the thickness of the diamond heat sink ranges from 0.2 mm to 0.4 mm.

2. The laser according to claim 1, characterized in that The laser also includes: at least one reflecting prism located on one side of the diamond copper, each of the reflecting prisms is fixedly connected to the diamond copper bottom plate, and the at least one reflecting prism corresponds to the at least one light-emitting chip one by one, and the light-emitting surface of each light-emitting chip faces the reflecting surface of the corresponding reflecting prism.

3. The laser according to claim 2, characterized in that In the direction of the optical axis of each light-emitting chip, the distance between the light-emitting chip and the reflective surface of the reflective prism ranges from 0.3 mm to 0.5 mm.

4. The laser according to claim 2, characterized in that The end of the light emitting chip facing the reflective prism protrudes from the diamond heat sink, and in the optical axis direction of the light emitting chip, the length of the light emitting chip protruding relative to the diamond heat sink ranges from 5 microns to 10 microns.

5. The laser according to any one of claims 1 to 4, characterized in that: The laser further comprises: a solder layer located on a side of the diamond heat sink away from the diamond copper bottom plate, and the diamond heat sink is fixedly connected to the corresponding light-emitting chip through the solder layer.

6. The laser according to claim 5, characterized in that The thickness of the solder layer is in a range of 2 micrometers to 5 micrometers.

7. The laser according to claim 5, characterized in that The laser further includes: a first metal layer located between the solder layer and the diamond heat sink, and a second metal layer located between the diamond heat sink and the diamond copper bottom plate.

8. The laser according to claim 7, characterized in that The first metal layer and the second metal layer both include: a titanium layer, a platinum layer and a gold layer which are stacked, and the titanium layer in the first metal layer and the second metal layer is fixedly connected to the surface of the diamond heat sink; The thickness of the titanium layer ranges from 0.04 micrometers to 0.08 micrometers, the thickness of the platinum layer ranges from 0.1 micrometers to 0.3 micrometers, and the thickness of the gold layer ranges from 0.4 micrometers to 0.8 micrometers.

9. The laser according to any one of claims 1-4, 6-8, characterized in that: The thickness of the diamond copper bottom plate ranges from 1 mm to 4 mm.

10. The laser according to any one of claims 1-4, 6-8, characterized in that: The laser further comprises: a frame body fixedly connected to one side of the diamond copper bottom plate, and the at least one diamond heat sink and the at least one light-emitting chip are both located in the area enclosed by the frame body.

Images