X-band satellite-borne power amplifier assembly
By adopting the main and standby cold backup design and integrated circuit in the pre-amplifier assembly of the satellite-on-on-phase array antenna, the degradation problem of solid-state power devices under high temperature stress is solved, and the high reliability and long-term stability of the components are achieved, ensuring that The efficient operation of the antenna.
Patent Information
- Application Number
- CN202411341153.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-25
- Publication Date
- 2024-12-31
AI Technical Summary
The pre-amplifier components of the on-site phased array antenna are prone to deterioration of solid-state power devices under high temperature stress, causing system failures, and affecting the reliability and long-term stability of the antenna.
A X-band satellite-borne solid-state amplifier component with cold backup function was designed, adopting the main and backup cold backup design, including solid-state amplifier chain, power supply modulation circuit and radio frequency detection circuit, through RF input and output detection signals and secondary power supply telemetry signals Automatic switching is realized to ensure that the system switches to standby operation when the main circuit fails, improving the reliability and integration of components.
It realizes that the long-term reliability and high reliability of the satellite-on-mounted phased array antenna is improved while meeting the excitation power and amplitude phase stability, reduces power consumption, and improves the full temperature of the components through integrated design and thermal management. Amplitude phase stability.
Smart Images
Figure CN119232184A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the field of microwave technology, and in particular relates to an X-band satellite-borne power amplifier component. Background Art
[0002] With the rapid development of my country's aerospace technology, phased array antennas are being used more and more widely in the satellite field. Phased array antennas have greatly improved the efficiency and accuracy of observing targets due to their advantages such as adjustable beam, high directivity, fast tracking and spatial multiplexing. Phased array antennas are composed of thousands or even tens of thousands of active channels. Even if several active channels fail, it will not have a significant impact on the entire antenna system. However, the pre-amplifier component that provides excitation power for the active channels of the entire phased array antenna array is an important part of the reliability of the entire phased array antenna. The function of the pre-amplifier component is to amplify the small signal from the frequency source to a high-power signal to drive the active channel of the entire antenna array. Once the performance of the pre-amplifier component degrades or fails, the active channel of the entire antenna array will be affected or even unable to work. Therefore, designing a highly reliable pre-amplifier component is a necessary means to ensure the long-term reliability of satellite-borne phased array antennas.
[0003] The front-stage power amplifier component is developed with solid-state power devices, which have the advantages of small size, high integration, high working efficiency and good thermal stability. The front-stage power amplifier component works in pulse mode. The junction temperature of the high-power solid-state power device in the amplifier will rise rapidly under high duty cycle conditions. If the solid-state power device is under high temperature stress for a long time, it will degrade. Once the device fails, it will become a single point of failure that causes the entire antenna array to be paralyzed. This is unacceptable for the satellite-borne phased array antenna. Therefore, it is considered to design a main backup circuit with cold backup function to improve the reliability of the front-stage power amplifier component. Summary of the invention
[0004] In order to meet the high integration and high reliability requirements of satellite-borne phased array antennas, the present invention proposes a satellite-borne X-band solid-state power amplifier component with cold backup function, which can amplify milliwatt-level small signals to more than 20W, and integrates the corresponding power modulation circuit, radio frequency detection circuit and secondary power supply internally. Compared with traditional X-band power amplifier components, this X-band satellite-borne power amplifier component can have good long-term reliability while providing the excitation power and amplitude and phase stability required by phased array antennas, and is well adapted to the application scenarios of high reliability and long life of satellite-borne products.
[0005] An X-band satellite-borne high-reliability power amplifier assembly of the present invention is composed of a solid-state amplifier chain, a power modulation circuit, a radio frequency detection circuit, and a secondary power supply, and is specifically as follows:
[0006] The transmitting channel, power modulation circuit and secondary power supply of the solid-state amplifier chain inside the amplifier component all adopt a one-main-one-standby cold backup design. When the main circuit is working, the standby circuit is not powered. When the main circuit is judged to have a fault based on the RF input and RF output detection signals fed back by the RF detection circuit and the secondary power supply telemetry signal, the central electronic equipment will issue a command to switch to the standby circuit to continue working.
[0007] The solid-state amplification chain is composed of an input duplexer (101), an output duplexer (105) and a main and standby transmission channel (10) in cascade. Each transmission channel includes an isolator (102), a pre-stage power amplifier (103) and a final stage power amplifier (104); after the radio frequency input signal enters the power amplifier component, it is sent to the main and standby transmission channel (10) by the input duplexer (101), and is amplified step by step by two-stage amplifiers in the channel and then output to the antenna array through the output duplexer (105). The gate voltage and drain voltage required by each transmission channel are provided by its corresponding power modulation circuit (20), and only one transmission channel can be powered on at the same time.
[0008] The power modulation circuit includes two main and backup paths, which correspond to the main and backup transmission channels respectively. Each power modulation circuit includes a differential converter (201), a modulator (202), a high-power MOS tube (203) and a negative reference circuit (204). The power modulation signal input of an X-band high-reliability power amplifier component of the present invention includes two main and backup TR2 signals, both of which are in differential form to improve the anti-interference ability. The differential converter (201) converts the differential modulation signal into a single-ended signal to drive the modulator (202), and the modulator inverts the modulation signal to control the high-power MOS tube (203) to achieve the pulse output of the drain voltage. The function of the negative reference circuit (204) is to provide the gate voltage required by the transmission channel. The power input of an X-band satellite-borne high-reliability power amplifier component of the present invention is a DC high voltage, which is converted into a low voltage type required by the power modulation circuit and the radio frequency detection circuit by an internal secondary power supply, and the main and backup switches of each type of power supply are controlled by a contact signal.
[0009] The beneficial effects of the present invention are
[0010] 1. High reliability: The transmitting channel, power modulation circuit and secondary power supply inside the power amplifier component all adopt a two-way main backup design. In actual operation, only one way is working, and the other way is in a power-off state. When the main path works abnormally, the radar central electronic equipment will send a command to switch to the power amplifier component backup path after judging the fault based on the telemetry signal, which will not cause any impact on the function and performance of the antenna array. The main and backup circuits of the transmitting channel, power modulation circuit and secondary power supply are all one-to-one corresponding to ensure the uniqueness and mutual exclusivity of the main and backup circuits when working.
[0011] 2. High integration: The amplifier component adopts the integrated design of main and backup structure. The main and backup power modulation circuit and the main and backup secondary power supply adopt the common cavity design. The main and backup transmission channels share a pair of input and output duplexers. The power amplifier component also has the real-time monitoring function of RF input and output signals and secondary power supply voltage. The four major functional circuits of RF circuit, low-frequency control and modulation circuit, state monitoring circuit and secondary power supply are integrated together, and the main and backup redundant design is realized, with a high degree of integration.
[0012] 3. High amplitude and phase stability: The pre-amplifier, final amplifier, isolator, and input and input duplex active and passive microwave devices on the solid-state amplification chain inside the power amplifier component are directly mounted and fixed on the metal shell of the power amplifier component, ensuring the integrity and continuity of the RF grounding and good heat conduction. In addition, by reasonably wrapping each level of the amplifier in a closed metal cavity, a good spatial isolation between the amplifier stages and the main and standby channels is achieved, and necessary isolators are added between each level of the amplifier. These measures have greatly improved the full-temperature amplitude and phase stability of the power amplifier component.
[0013] 4. Low power consumption: The solid-state amplification chain inside the power amplifier component works in pulse mode. The power modulation circuit realizes the modulation function of the DC power supply according to the TR2 signal. It draws power when working and shuts off the power when not working. The component has the characteristics of low power consumption. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] Figure 1 The present invention is a schematic diagram of a solid-state amplification chain and radio frequency detection circuit of an X-band satellite-borne high-reliability power amplifier assembly.
[0015] Figure 2 The present invention is a control principle diagram of an X-band satellite-borne high-reliability power amplifier assembly.
[0016] Figure 3 This is a layout diagram of a control and detection board for an X-band satellite-borne high-reliability power amplifier assembly according to the present invention.
[0017] Figure 4 The present invention is a structural diagram of an X-band satellite-borne high-reliability power amplifier assembly.
[0018] Figure 5 The present invention is a schematic diagram of heat dissipation of an X-band satellite-borne high-reliability power amplifier component. DETAILED DESCRIPTION
[0019] The technical solutions in the embodiments of the present invention are described clearly and completely below. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0020] like Figure 1 As shown, the solid-state amplification chain of an X-band satellite-borne high-reliability power amplifier assembly of the present invention is composed of an input duplexer 101 and an output duplexer 105 to connect the two independent RF transmission channels 10 of the main and standby channels in parallel to realize one output. The power protection assembly can amplify the excitation signal to more than 20W to drive the active channel on the antenna array. Each transmission channel includes an isolator 102, a pre-stage power amplifier 103 and a final stage power amplifier 104; each transmission channel receives an independent power supply modulation signal to realize pulse operation; two transmission channels share one input duplexer 101 and one output duplexer 105, and the input duplexer 101 and the output duplexer 105 are internally integrated with couplers, which can couple the RF input signal and the RF output signal to the RF detection module 106 to realize RF signal monitoring.
[0021] The RF signal flow of the power amplifier component is as follows: the input excitation signal provided by the frequency source is sent to the main and standby transmission channels respectively by the input duplexer 101. The excitation signal entering the RF transmission channel is amplified step by step by the isolator, the pre-stage power amplifier, the isolator, the final stage power amplifier, and the isolator to obtain a high-power signal, and finally output to the antenna array through the output duplexer 105.
[0022] like Figure 2 As shown, the control circuit part of the power amplifier component includes two main and standby power supply modulation circuits corresponding to the main and standby amplification channels respectively. Each power supply modulation circuit 20 includes a differential converter 201, a modulator 202, a high-power MOS tube 203 and a negative reference circuit 204. The control input of the power amplifier component includes two sets of control timings of TR2 main and standby, and adopts a differential form to improve the anti-interference ability. The differential converter 201 converts the TR2 input level in differential form into a single-ended signal level. The differential converter 201 converts the control timing into a single-ended TTL pulse signal and sends it to the modulator 202. The modulator 202 drives the high-power MOS tube 203 to provide the drain voltage to the corresponding transmission channel. In addition, the negative reference circuit 204 can achieve negative voltage output under typical applications through peripheral adjustment resistors of different proportions, providing a suitable gate voltage for the final power amplifier 104.
[0023] The isolator 102, the pre-amplifier 103, and the final amplifier 104 in the RF transmission channel 10 of the power amplifier component are all packaged discrete devices. The differential converter 201, the modulator 202, the high-power MOS tube 203, and the negative reference circuit 204 in the power modulation circuit 20 use packaged integrated circuits. The electrical performance and reliability of the devices can be individually evaluated, ensuring the high reliability and long life of the power amplifier component. At the same time, the main and standby power modulation circuits are integrated, such as Figure 3As shown, a differential converter 201 is installed in area 131 of the circuit printed board, a modulator 202 is installed in area 232, a negative reference circuit 203 is installed in area 333, and a high-power MOS tube 204 is installed in area 434.
[0024] like Figure 4 As shown, the power amplifier assembly adopts a dual-channel integrated design, and the main structural components include the assembly housing 40 and the transmission channel cover 45, and 5A05 aluminum alloy is used as the housing material. The pre-stage power amplifier 103 and the final stage power amplifier 104 of the solid-state power device with high heat consumption are installed on the assembly housing 40 and fastened by screws; other functional units include secondary power supply 44, low-frequency electrical connectors 41, 42, RF electrical connector 43, control circuit 46, etc., which are fastened to the assembly housing 40 by screws, and the input duplexer 101 and the output duplexer 105 are installed on the assembly housing 40 by large-area welding, which effectively solves the problem of discontinuous grounding of the RF circuit.
[0025] like Figure 5 As shown, the two solid-state power devices, the pre-stage power amplifier 103 and the final stage power amplifier 104, selected in the power amplifier assembly have the characteristics of large heat consumption, and reasonable thermal design must be used to ensure that the junction temperature of the device meets the Class I derating standard. The pre-stage power amplifier 103 and the final stage power amplifier 104 of the solid-state power device adopt GaN technology, and the device is a metal tube shell package, which has a large difference in thermal expansion coefficient with the 5A05 aluminum alloy selected for the assembly housing 40. If these two power devices are directly welded to the assembly housing 40, thermal mismatch will occur, causing the internal chip of the power device to crack and fail. Therefore, the assembly of the present invention fastens the isolator 102, the pre-stage power amplifier 103 and the final stage power amplifier 104 to the assembly housing 40 through screws, and a layer of indium foil 48 is placed between the device and the housing, which ensures stable and reliable structural installation and good heat conduction. Other low-heat-consumption functional units inside the assembly, such as the secondary power supply 44, the transmission channel cover 45, the control circuit 46, etc., are all connected to the assembly housing 40 by screws. The entire power amplifier assembly is fixed to the mounting surface via the bottom bracket using screws.
[0026] The present invention is not limited to the above specific implementations, and the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made to the above implementations based on the technical essence of the present invention shall be included in the protection scope of the present invention.
Claims
1. An X-band satellite-borne power amplifier assembly, characterized in that: It includes a solid-state amplifier link, a power modulation circuit, a radio frequency detection circuit, and a secondary power supply; the solid-state amplifier link, the power modulation circuit, and the secondary power supply all adopt an integrated design of main and standby cold backup. When the main line is working, the standby line is not powered. When it is determined that the main line fails, it switches to the standby line to power on and continue working.
2. The X-band satellite-borne power amplifier assembly according to claim 1, characterized in that: The solid-state amplification link connects the two independent RF transmission channels of the main and standby channels in parallel by an input duplexer and an output duplexer to realize one output; each RF transmission channel includes an isolator, a pre-stage power amplifier and a final stage power amplifier; each transmission channel receives an independent power supply modulation signal to realize pulse operation; the two transmission channels share one input duplexer and one output duplexer, and the input duplexer and the output duplexer are internally integrated with a coupler, which can couple the RF input signal and the RF output signal to the RF detection module to realize RF signal monitoring; The solid-state amplification link is sent to the main and standby RF transmission channels respectively by the input duplexer according to the input excitation signal provided by the frequency source. The excitation signal entering the RF transmission channel is amplified step by step by isolator 1, pre-stage power amplifier, isolator 2, final stage power amplifier, and isolator 3 to obtain a high-power signal, and is finally output to the antenna array through the output duplexer 105.
3. The X-band satellite-borne power amplifier assembly according to claim 1, characterized in that: The main and standby power modulation circuits correspond to the main and standby RF transmission channels respectively. Each power modulation circuit includes a differential converter, a modulator, a high-power MOS tube and a negative reference circuit. The control input of the power amplifier component includes two sets of main and standby control timings. The differential converter converts the control timing into a single-ended TTL pulse signal and sends it to the modulator. The modulator drives the high-power MOS tube to provide a drain voltage to the corresponding RF transmission channel. The negative reference circuit realizes negative voltage output through external adjustment resistors of different proportions, which is the gate voltage of the final power amplifier.
4. An X-band satellite-borne power amplifier assembly according to claim 2 or 3, characterized in that: The isolator, pre-stage power amplifier and final-stage power amplifier in the RF transmission channel are all packaged discrete devices, and the differential converter, modulator, high-power MOS tube and negative reference circuit in the power modulation circuit use packaged integrated circuits.
5. The X-band satellite-borne power amplifier assembly according to claim 4, characterized in that: The power amplifier component adopts a dual-channel integrated design. The structural components include a component housing, a transmission channel cover, and a functional unit. The functional unit includes a secondary power supply, a low-frequency electrical connector, a radio frequency electrical connector, and a control circuit. The isolator, pre-stage power amplifier and final-stage power amplifier are installed on the component housing and fastened by screws; the secondary power supply, low-frequency electrical connector, radio frequency electrical connector, and control circuit are fastened to the component housing 40 by screws, and the input duplexer and output duplexer are installed on the component housing by large-area welding.
6. The X-band satellite-borne power amplifier assembly according to claim 5, characterized in that: A layer of indium foil is also placed between the isolator, the pre-stage power amplifier, the final stage power amplifier and the shell.