Photoelectric device, preparation method thereof and display device

Abstract

The invention discloses a photoelectric device and a preparation method thereof, and a display device, the photoelectric device comprises an anode and a cathode which are oppositely arranged, and also comprises an electron transport layer arranged between the anode and the cathode, the photoelectric device also comprises an interface layer, the interface layer is located between the cathode and the electron transport layer, and the interface layer is located between the cathode and the electron transport layer. And the interface layer comprises zinc fluoride. The photoelectric device comprises the interface layer, the material of the interface layer comprises zinc fluoride, and the zinc fluoride can effectively reduce the injection barrier of electrons, so that the electron mobility of the photoelectric device is improved.

Description

Technical Field

[0001] The present application relates to the technical field of optoelectronic devices, and in particular to an optoelectronic device, a method for preparing an optoelectronic device, and a display device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting devices (OLED) and quantum dot light-emitting devices (QLED). OLED has become the mainstream technology in the field of display technology due to its excellent display performance such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display. QLED has the advantages of saturated color of emitted light, adjustable wavelength, low start-up voltage, good solution processability, easy fine control of quantum dots, and high quantum yield of photoluminescence and electroluminescence. In recent years, it has become a strong competitor of OLED.

[0003] The structure of traditional OLED and QLED devices generally includes an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode. Under the action of the electric field, the holes generated by the anode of the optoelectronic device and the electrons generated by the cathode move and are injected into the hole transport layer and the electron transport layer respectively, and finally migrate to the light-emitting layer. When the two meet in the light-emitting layer, energy excitons are generated, thereby exciting the light-emitting molecules and finally producing visible light.

[0004] The efficiency of existing optoelectronic devices is relatively low and needs to be further improved. Summary of the invention

[0005] In view of this, the present application provides a method for preparing a photoelectric device, aiming to improve the problem of low efficiency of the photoelectric device prepared by the existing preparation method.

[0006] An embodiment of the present application is implemented as follows: a photoelectric device includes an anode and a cathode arranged relatively to each other, and also includes an electron transport layer arranged between the anode and the cathode. The photoelectric device also includes an interface layer, and the interface layer is located between the cathode and the electron transport layer. The interface layer includes zinc fluoride.

[0007] Optionally, in some embodiments, the thickness of the interface layer is 5 to 15 nm, preferably, the thickness of the interface layer is 8 to 12 nm; and / or

[0008] The zinc fluoride is zinc fluoride particles, and the average particle size of the zinc fluoride particles is 3 to 6 nm.

[0009] Optionally, in some embodiments, the material of the electron transport layer includes inorganic semiconductor particles, wherein:

[0010] The average particle size of the inorganic semiconductor particles is in the range of 3 to 5 nm; and / or

[0011] The inorganic semiconductor particles include doped metal oxide particles, undoped metal oxide particles, one or more of IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials. The material of the undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA semiconductor materials include one or more of CuInS and CuGaS.

[0012] Optionally, in some embodiments, in the doped metal oxide particles, the mass fraction of the doping element in the doped metal oxide particles is 1-20%.

[0013] Optionally, in some embodiments, the interface layer is composed of zinc fluoride.

[0014] Optionally, in some embodiments, the optoelectronic device further comprises a light-emitting layer, wherein the light-emitting layer is located between the anode and the electron transport layer.

[0015] Optionally, in some embodiments, the anode includes a doped metal oxide electrode, a first composite electrode, a graphene electrode, a carbon nanotube electrode, a first metal single substance electrode or a first alloy electrode, the material of the doped metal oxide electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, and cadmium-doped zinc oxide, the first composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS or ZnS / Al / ZnS, and the material of the first metal single substance electrode includes one or more of Ni, Pt, Au, Ir, Cu, Mo, and / or

[0016] The cathode includes a second metal single substance electrode, a second alloy electrode or a second composite electrode, the material of the second metal single substance electrode includes Ag, Ca, Ba, Al or Mg; the second alloy electrode includes one or more of Au:Mg and Ag:Mg; the second composite electrode includes Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al or BaF2 / Ca / Al; and / or

[0017] The material of the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material, and the organic light-emitting material includes one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing covalent bonds of BN, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot luminescent material includes one or more of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material. The material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Zn STe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound includes SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, One or more of PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, the III-V group compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlN As, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, and the general structural formula of the inorganic perovskite semiconductor is AMX3, wherein A is Cs; + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; and / or

[0018] The photoelectric device also includes a hole transport layer located between the anode and the light-emitting layer, and the material of the hole transport layer includes 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3 -methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4- 4'-diamine, spiro NPB, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines , 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; and / or

[0019] The photoelectric device also includes a hole injection layer located between the anode and the light-emitting layer, and the material of the hole injection layer includes one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide.

[0020] Accordingly, an embodiment of the present application further provides a method for preparing a photoelectric device, comprising:

[0021] Providing a photovoltaic device preform, the photovoltaic device preform comprising a stacked anode and an electron transport layer;

[0022] Providing zinc fluoride, and disposing the zinc fluoride on the electron transport layer to obtain an interface layer;

[0023] forming a cathode on a surface of the interface layer away from the cathode to obtain a photoelectric device;

[0024] or,

[0025] Providing a photovoltaic device preform, wherein the photovoltaic device preform comprises a cathode;

[0026] Providing zinc fluoride, and disposing the zinc fluoride on the cathode to obtain an interface layer;

[0027] A stacked electron transport layer and an anode are prepared on the surface of the interface layer away from the cathode to obtain a photoelectric device.

[0028] Optionally, in some embodiments, the optoelectronic device preform comprises a stacked anode, a light-emitting layer and an electron transport layer; or

[0029] The step of preparing a stacked electron transport layer and an anode on a surface of the interface layer away from the cathode comprises: preparing a stacked electron transport layer, a light emitting layer and an anode on a surface of the interface layer away from the cathode.

[0030] Optionally, in some embodiments, the optoelectronic device preform comprises a stacked anode, a hole functional layer, a light-emitting layer and an electron transport layer; or

[0031] The step of preparing a stacked electron transport layer and an anode on a surface of the interface layer away from the cathode comprises: preparing a stacked electron transport layer, a light-emitting layer, a hole functional layer and an anode on a surface of the interface layer away from the cathode.

[0032] Optionally, in some embodiments, the method of disposing the zinc fluoride on the optoelectronic device preform is evaporation, wherein the evaporation rate is 1 to 10 angstroms / minute, and / or the evaporation time is 30 to 60 minutes.

[0033] Correspondingly, an embodiment of the present application further provides a display device, which includes the above-mentioned optoelectronic device.

[0034] The optoelectronic device described in the present application includes the interface layer, and the material of the interface layer includes the zinc fluoride. The zinc fluoride can effectively reduce the electron injection barrier, thereby improving the electron mobility of the optoelectronic device, and further improving the brightness of the optoelectronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0036] Figure 1 is a schematic structural diagram of an optoelectronic device provided in an embodiment of the present application;

[0037] Figure 2 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0038] Figure 3 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0039] Figure 4 is a flow chart of a method for preparing a photoelectric device provided in an embodiment of the present application;

[0040] Figure 5 This is a flow chart of another method for preparing a photoelectric device provided in an embodiment of the present application.

[0041] Reference numerals:

[0042] Optoelectronic device 100; anode 10; light-emitting layer 20; electron transport layer 30; interface layer 40; cathode 50; hole transport layer 60; hole injection layer 70. DETAILED DESCRIPTION

[0043] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0044] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0045] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0046] In the present application, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0047] In the present application, when a layer is formed "on" another layer, the so-called "on" is a broad concept, which may indicate that the formed another layer is adjacent to the certain layer, or may indicate that there are other spacing structural layers between the another layer and the certain layer. For example, when a second electrode is formed "on" the first carrier functional layer, the so-called "on" may indicate that the formed second electrode is adjacent to the first carrier functional layer, or may indicate that there are other spacing structural layers between the second electrode and the first carrier functional layer, such as a light-emitting layer.

[0048] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0049] The cathode material of the photoelectric device mainly adopts metal electrodes with low work function. These metal electrodes with low work function are relatively active and easily affected by the electron transport layer material and its ligands. They react with the lattice defects or ligands on the surface of the electron transport layer material and become oxidized, thereby affecting the electron injection of the photoelectric device, and further affecting the performance of the photoelectric device such as luminous efficiency and life span.

[0050] The technical solution of this application is as follows:

[0051] First, see Figure 1 The embodiment of the present application provides a photoelectric device 100, comprising an anode 10 and a cathode 50 arranged opposite to each other, and an electron transport layer 30 arranged between the anode 10 and the cathode 50. The photoelectric device 100 further comprises an interface layer 40, wherein the interface layer 40 is located between the electron transport layer 30 and the cathode 50, wherein the interface layer 40 comprises zinc fluoride.

[0052] The material of the electron transport layer 30 includes inorganic semiconductor particles.

[0053] The optoelectronic device 100 described in the present application includes the interface layer 40, and the material of the interface layer 40 includes the zinc fluoride. On the one hand, the zinc fluoride can separate the cathode 50 from the electron transport layer 30, thereby preventing the cathode 50 from reacting with the inorganic semiconductor particles in the electron transport layer 30 and / or the ligands connected to the inorganic semiconductor particles and being damaged, thereby improving the stability and life of the optoelectronic device 100; on the other hand, the zinc fluoride can also reduce the electron injection barrier, thereby improving the electron mobility of the optoelectronic device 100, and further improving the brightness, luminous efficiency and stability of the optoelectronic device 100.

[0054] The inorganic semiconductor particles may include, but are not limited to, doped metal oxide particles, undoped metal oxide particles, one or more of Group IIB-VIA semiconductor materials, Group IIIA-VA semiconductor materials, and Group IB-IIIA-VIA semiconductor materials. The materials of the undoped metal oxide particles include, but are not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3, and the doping elements in the doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The Group IIB-VIA semiconductor materials include one or more of ZnS, ZnSe, and CdS, the Group IIIA-VA semiconductor materials include one or more of InP and GaP, and the Group IB-IIIA-VIA semiconductor materials include one or more of CuInS and CuGaS.

[0055] In some embodiments, in the doped metal oxide particles, the mass fraction of the doping element in the doped metal oxide particles is 1-20%, for example, 1-10%, 5-15%, 8-18%, 10-20%, etc. Within the range of the doping amount, the stability and electron transport performance of the electron transport layer 30 can be effectively improved.

[0056] The anode 10 is an electrode with a relatively high work function for a photoelectric device known in the art, for example, it may include but is not limited to a doped metal oxide electrode, a first composite electrode, a graphene electrode, a carbon nanotube electrode, a first metal single substance electrode or a first alloy electrode. The material of the doped metal oxide electrode may include but is not limited to one or more of indium doped tin oxide (ITO), fluorine doped tin oxide (FTO), antimony doped tin oxide (ATO), aluminum doped zinc oxide (AZO), gallium doped zinc oxide (GZO), indium doped zinc oxide (IZO), magnesium doped zinc oxide (MZO), aluminum doped magnesium oxide (AMO), and cadmium doped zinc oxide. The first composite electrode is an electrode formed by stacking two or more layers of conductive materials, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, etc., where " / " represents a stacked structure, for example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer and an AZO layer stacked in sequence. The material of the first metal single substance electrode may include but is not limited to one or more of Ni, Pt, Au, Ir, Cu, and Mo.

[0057] The cathode 50 is an electrode with a relatively low work function, for example, it may include but is not limited to a second metal single substance electrode with a relatively low work function, a second composite electrode with a relatively low work function, and a second alloy electrode with a relatively low work function. The material of the second metal single substance electrode with a relatively low work function includes but is not limited to Ag, Ca, Ba, Al or Mg. The second composite electrode with a relatively low work function includes but is not limited to Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc., where " / " represents a stacked arrangement, for example, Ca / Al represents a composite electrode formed by stacking a Ca layer and an Al layer. The material of the second alloy electrode with a relatively low work function includes but is not limited to one or more of Au:Mg and Ag:Mg.

[0058] In some embodiments, the average particle size of the inorganic semiconductor particles is in the range of 3 to 5 nm. Within the range, the inorganic semiconductor particles have high stability, and the thin film prepared from the inorganic semiconductor particles has good film-forming properties and fewer holes.

[0059] In some embodiments, the zinc fluoride is zinc fluoride particles. The average particle size of the zinc fluoride particles is 3 to 6 nm. Within the particle size range, the interface layer can have a better interface modification effect.

[0060] In some embodiments, the thickness of the interface layer 40 is 5 to 15 nm, for example, 5 to 10 nm, 8 to 12 nm, 10 to 15 nm, etc.; for example, 6 nm, 7 nm, 9 nm, 11 nm, 13 nm, 14 nm, etc. Within the thickness range, the contact interface between the electron transport layer 30 and the cathode 50 can be effectively optimized to avoid direct contact between the cathode 50 and the electron transport layer 30, thereby preventing the cathode 50 from being damaged by oxidation due to lattice defects or ligand reactions on the material surface of the electron transport layer 30, which is beneficial to improving the stability and life of the optoelectronic device 100, and improving the electron mobility, thereby improving the brightness, luminous efficiency and stability of the optoelectronic device 100.

[0061] Preferably, in at least one embodiment, the thickness of the interface layer 40 is 8 to 12 nm. Within the thickness range, the electron transport layer 30 and the cathode 50 can have a better interface contact, and at the same time, it is more conducive to making the optoelectronic device 100 have better stability, life, brightness, luminous efficiency and other performance.

[0062] In some embodiments, the interface layer 40 is composed of zinc fluoride.

[0063] See also Figure 2 In some embodiments, the optoelectronic device 100 further includes a light-emitting layer 20 located between the anode 10 and the electron transport layer 30. In this case, the optoelectronic device 100 is a light-emitting device, such as an organic light-emitting device or a quantum dot light-emitting device.

[0064] Please refer to Figure 3 In some embodiments, the optoelectronic device 100 further includes a hole functional layer, and the hole functional layer is located between the anode 10 and the light emitting layer 20. The hole functional layer includes one or both of a hole transport layer 60 and a hole injection layer 70.

[0065] The material of the light-emitting layer 20 may include, but is not limited to, one or more of an organic light-emitting material and a quantum dot light-emitting material.

[0066] The organic light-emitting material may include, but is not limited to, one or more of CBP:Ir(mppy)3(4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III)), TCTX:Ir(mmpy)(4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium), diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delay) materials, polymers containing covalent bonds of BN, HLCT (hybridized localized charge transfer excited state) materials, Exciplex (exciplex) light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives.

[0067] The quantum dot light-emitting material may include, but is not limited to, one or more of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials.

[0068] The material of the single structure quantum dots, the core material of the core-shell structure quantum dots and the shell material of the core-shell structure quantum dots may respectively include but are not limited to one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds may include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe. The IV-VI group compounds may include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compound may include, but is not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compound may include, but is not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0069] As an example, the core-shell structured quantum dots may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0070] The perovskite semiconductor material may include but is not limited to doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of .

[0071] The material of the hole transport layer 60 can be a material known in the art for a hole transport layer, for example, can be selected from but not limited to 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N ...1-naphthyl)-1,1'-biphenyl-4,4"-diamine (α-NPD), N (3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tri(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl -1,1'-biphenyl-4-4'-diamine (NPB), spiro NPB, poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazol-9-yl)benzene (MCP ), polyaniline, polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3, doped or undoped CuO. One or more.

[0072] The material of the hole injection layer 70 can also be a material known in the art for hole injection layer, for example, it can be selected from but not limited to 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO3 derivatives (PEDOT:PSS:s-MoO3), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinodimethane (F4-TCQN), copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide. One or more.

[0073] It is understood that in some embodiments, the optoelectronic device 100 may also include functional layers conventionally used in optoelectronic devices to help improve the performance of optoelectronic devices, such as an electron blocking layer, a hole blocking layer, an electron injection layer, an interface modification layer, etc.

[0074] It can be understood that the materials of each layer of the optoelectronic device 100 can be adjusted according to the light emitting requirements of the optoelectronic device 100 .

[0075] In some embodiments, the optoelectronic device 100 further includes a substrate, which is disposed on a surface of the anode 10 facing away from the light-emitting layer 20 , or the substrate is disposed on a surface of the cathode 50 facing away from the light-emitting layer 20 .

[0076] The substrate may be a rigid substrate or a flexible substrate. In some embodiments, the material of the substrate may include but is not limited to one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide and polyether sulfone.

[0077] It is understood that the optoelectronic device 100 may be an upright optoelectronic device or an inverted optoelectronic device. The optoelectronic device 100 may be a quantum dot optoelectronic device or an organic optoelectronic device.

[0078] Second, see Figure 4 and Figure 1 The present invention provides a method for preparing a photoelectric device, comprising the following steps:

[0079] Step S11, providing a photoelectric device preform, wherein the photoelectric device preform includes a stacked anode 10 and an electron transport layer 30;

[0080] Step S12, providing zinc fluoride, and disposing the zinc fluoride on the electron transport layer 30 to obtain an interface layer 40;

[0081] Step S13 , preparing a cathode 50 on a surface of the interface layer 40 away from the anode 10 to obtain a photoelectric device 100 .

[0082] In some embodiments, see Figure 2 The optoelectronic device preform further includes a light-emitting layer 20 located between the anode 10 and the electron transport layer 30 .

[0083] In some other embodiments, see Figure 3 The optoelectronic device preform further includes a hole functional layer located between the anode 10 and the light-emitting layer 20 , wherein the hole functional layer includes a hole transport layer 60 and / or a hole injection layer 70 .

[0084] It can be understood that when the hole functional layer includes a hole transport layer 60 and a hole injection layer 70 , the hole injection layer 70 is located between the anode 10 and the hole transport layer 60 .

[0085] Third, see Figure 5 and Figure 1 The present invention provides another method for preparing a photoelectric device, comprising the following steps:

[0086] Step S21, providing a photoelectric device preform, wherein the photoelectric device preform includes a cathode 50;

[0087] Step S22, providing zinc fluoride, and placing the zinc fluoride on the cathode 50 to obtain an interface layer 40;

[0088] Step S23 , sequentially preparing a stacked electron transport layer 30 and an anode 10 on a surface of the interface layer 40 away from the cathode 50 to obtain a photoelectric device 100 .

[0089] In some embodiments, see Figure 2 The step S23 includes: sequentially forming a stacked electron transport layer 30 , a light-emitting layer 20 and an anode 10 on a surface of the interface layer 40 away from the cathode 50 to obtain a photoelectric device 100 .

[0090] In some other embodiments, see Figure 3 , the step S23 comprises: sequentially forming a stacked electron transport layer 30, a light-emitting layer 20, a hole functional layer and an anode 10 on the surface of the interface layer 40 away from the cathode 50, wherein the hole functional layer comprises a hole transport layer 60 and / or a hole injection layer 70, to obtain a photoelectric device 100.

[0091] It is understandable that when the hole functional layer includes the hole transport layer 60 and the hole injection layer 70 , the hole transport layer 60 may be first formed on the light emitting layer 20 , and then the hole injection layer 70 may be formed on the hole transport layer 60 .

[0092] In the above two preparation methods, the method of forming the anode 10, the light-emitting layer 20, the electron transport layer 30, the cathode 50, the hole transport layer 60, and the hole injection layer 70, and the method of setting the zinc fluoride on the optoelectronic device preform, can be implemented by conventional techniques in the art, such as chemical methods or physical methods. Among them, the chemical method includes chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, electrolytic deposition, and coprecipitation. The physical method includes physical plating and solution method, among which the physical plating method includes: thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; the solution method can be spin coating, printing, inkjet printing, blade coating, printing, dip pulling, immersion, spraying, rolling, casting, slit coating, and strip coating.

[0093] In at least some embodiments, the method of disposing the zinc fluoride on the electron transport layer or the method of disposing the zinc fluoride on the cathode is evaporation.

[0094] In some embodiments, the evaporation rate is 1 to 10 angstroms / minute, for example, 1 to 6 angstroms / minute, 2 to 7 angstroms / minute, 3 to 8 angstroms / minute, 4 to 9 angstroms / minute, 5 to 10 angstroms / minute, etc., and for example, 2 angstroms / minute, 3 angstroms / minute, 4 angstroms / minute, 5 angstroms / minute, 6 angstroms / minute, 7 angstroms / minute, 8 angstroms / minute, 9 angstroms / minute, etc., and the evaporation time is 30 to 60 minutes, for example, 30 to 45 minutes, 35 to 50 minutes, 40 to 60 minutes, etc., and for example, 30 minutes, 35 minutes, 40 minutes, 45 minutes, 50 minutes, 55 minutes, etc. Within the evaporation rate range, it is beneficial to prepare an interface layer 40 with good film forming properties, good electron transport properties and suitable thickness.

[0095] The materials of the electron transport layer are as described above and will not be described again here.

[0096] It can be understood that the preparation method of the electron transport layer 30 can be the physical method or chemical method described above. Taking the material of the electron transport layer 30 as ZnO particles as an example, in at least one embodiment, the preparation method of the electron transport layer includes:

[0097] Step S31: providing a zinc salt and an organic solvent, mixing them to obtain a zinc salt solution;

[0098] Step S32: adding alkali to the zinc salt solution, mixing, reacting, adding a precipitant, and obtaining ZnO particles;

[0099] Step S33 : dispersing the ZnO particles in ethanol to obtain a ZnO particle dispersion, and placing the ZnO particle dispersion on a photoelectric device preform to obtain an electron transport layer 30 .

[0100] The zinc salt includes, but is not limited to, one or more of zinc chloride, zinc nitrate, and zinc acetate.

[0101] The organic solvent includes, but is not limited to, one or more of DMSO and DMF.

[0102] The base includes, but is not limited to, one or more of sodium hydroxide, potassium hydroxide, and tetramethylammonium hydroxide.

[0103] The precipitant is a known precipitant for preparing ZnO particles, such as acetone.

[0104] In the zinc salt solution, the concentration of the zinc salt is 0.1 to 1 M. Within the concentration range, it is beneficial to prepare ZnO particles.

[0105] The hydroxide ion OH in the base - The Zn in the zinc salt + The molar ratio of is in the range of (1.5-3.0): 1. Within the above range, it is beneficial to fully react the raw materials and prepare ZnO particles with good crystallinity.

[0106] Alkali is added to the zinc salt solution to adjust the pH of the solution system to 12 to 14. Within the pH range, it is beneficial to quickly and effectively prepare ZnO particles with good crystallinity.

[0107] In some embodiments, the alkali is an alkaline solution with a concentration of 0.1 to 1 M. Within the concentration range, it is beneficial to quickly and effectively prepare ZnO particles with good crystallinity.

[0108] In some embodiments, the solvent in the alkaline solution may include, but is not limited to, one or more of water, ethanol, methanol, DMSO (dimethyl sulfoxide), and DMF (dimethylformamide).

[0109] It can be understood that when the optoelectronic device 100 also includes functional layers conventionally used in optoelectronic devices that help improve the performance of the optoelectronic device, such as an electron blocking layer, a hole blocking layer, an electron injection layer, an interface modification layer, etc., the preparation method of the optoelectronic device 100 may also include the step of preparing the above-mentioned functional layers using conventional techniques in the field.

[0110] In a fourth aspect, the present application further relates to a display device, which includes the optoelectronic device 100 .

[0111] The display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0112] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0113] Example 1

[0114] Providing a conductive glass substrate having an ITO anode 10 with a thickness of 100 nm, cleaning the ITO conductive glass with a detergent to preliminarily remove stains on the surface, then ultrasonically cleaning it in deionized water, acetone, anhydrous ethanol, and deionized water for 20 minutes respectively to remove impurities on the surface, and finally drying it with high-purity nitrogen;

[0115] In a glove box, spin-coat the TFB material on the anode 10 at a spin-coating speed of 3000 rpm for 30 seconds and anneal at 150° C. for 30 minutes to obtain a hole transport layer 60 with a thickness of 40 nm;

[0116] Spin coating CdSe / ZnS red quantum dots on the hole transport layer 60, wherein the spin coating speed is 3000 rpm, the time is 30 s, and annealing is performed at 80° C. for 30 min to obtain a light emitting layer 20 with a thickness of 30 nm;

[0117] Spin-coat the luminescent layer 20 with an ethanol solution of ZnO at a speed of 4000 rpm for 30 seconds and anneal at 100° C. for 20 minutes to obtain an electron transport layer 30 with a thickness of 30 nm;

[0118] On the electron transport layer 30 , ZnF material is evaporated at a rate of 5 angstroms / minute for 60 minutes to obtain an interface layer 40 with a thickness of 10 nm;

[0119] Ag material is evaporated on the interface layer 40 at a rate of 5 angstroms / minute for 60 minutes to obtain a cathode 50 with a thickness of 70 nm;

[0120] The optoelectronic device 100 is obtained by packaging in an environment where both the oxygen content and the water content are lower than 0.1 ppm.

[0121] Example 2

[0122] Providing a conductive glass substrate having a Ag cathode 50 with a thickness of 100 nm, cleaning the conductive glass with a detergent to preliminarily remove stains on the surface, then ultrasonically cleaning in deionized water, acetone, anhydrous ethanol, and deionized water for 20 minutes respectively to remove impurities on the surface, and finally drying with high-purity nitrogen;

[0123] On the cathode 50 , ZnF material is evaporated at a rate of 5 angstroms / minute for 60 minutes to obtain an interface layer 40 with a thickness of 10 nm;

[0124] Spin-coat the interface layer 40 with an ethanol solution of ZnO at a speed of 4000 rpm for 30 seconds, and anneal at 100° C. for 20 minutes to obtain an electron transport layer 30 with a thickness of 40 nm;

[0125] Spin coating CdSeS / ZnSeS / ZnS blue quantum dots on the electron transport layer 30 at a speed of 3000 rpm for 30 seconds, and annealing at 80° C. for 30 minutes to obtain a light-emitting layer 20 with a thickness of 30 nm;

[0126] Spin coating TFB material on the light emitting layer 20 at a speed of 3000 rpm for 30 seconds, and annealing at 150° C. for 30 minutes to obtain a hole transport layer 60 with a thickness of 40 nm;

[0127] ITO material is evaporated on the hole transport layer 60 at a rate of 5 angstroms / minute for 60 minutes to obtain an anode 10 with a thickness of 50 nm;

[0128] The optoelectronic device 100 is obtained by packaging in an environment where both the oxygen content and the water content are lower than 0.1 ppm.

[0129] Example 3

[0130] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, the evaporation rate of zinc fluoride is 1 angstrom / minute, the time is 60 minutes, and the thickness of the interface layer 40 is 5 nm.

[0131] Example 4

[0132] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, the evaporation rate of zinc fluoride is 10 angstroms / minute, the time is 60 minutes, and the thickness of the interface layer 40 is 15 nm.

[0133] Example 5

[0134] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, an ethanol solution of ZnO doped with Mg is used to replace the ethanol solution of ZnO in Embodiment 1.

[0135] Example 6

[0136] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, an ethanol solution of TiO2 is used to replace the ethanol solution of ZnO in Embodiment 1.

[0137] Example 7

[0138] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, an ethanol solution of ZnS is used to replace the ethanol solution of ZnO in Embodiment 1.

[0139] Comparative Example 1

[0140] This comparative example is substantially the same as Example 1, except that the optoelectronic device of this comparative example does not include the interface layer 40 .

[0141] Comparative Example 2

[0142] This comparative example is substantially the same as Example 1, except that the material of the interface layer 40 of the optoelectronic device of this comparative example is CsF.

[0143] Comparative Example 3

[0144] This comparative example is substantially the same as Example 1, except that the material of the interface layer of the optoelectronic device of this comparative example is LiF.

[0145] Comparative Example 4

[0146] This comparative example is substantially the same as Example 1, except that the optoelectronic device of this comparative example does not include an interface layer, and the material of the electron transport layer includes ZnO particles and ZnF.

[0147] Comparative Example 5

[0148] This comparative example is substantially the same as Example 5, except that the optoelectronic device of this comparative example does not include an interface layer.

[0149] Comparative Example 6

[0150] This comparative example is substantially the same as Example 6, except that the optoelectronic device of this comparative example does not include an interface layer.

[0151] Comparative Example 7

[0152] This comparative example is substantially the same as Example 7, except that the optoelectronic device of this comparative example does not include an interface layer.

[0153] The maximum brightness L of the photoelectric devices of Examples 1 to 7 and Comparative Examples 1 to 7 was measured. max , external quantum efficiency EQE and lifetime T95@1000nit test. See Table 1 for test results.

[0154] Among them, the maximum brightness Lmax The test method for external quantum efficiency EQE is: using FPD optical property measurement equipment, controlling QE PRO spectrometer, Keithley 2400, and Keithley6485 through LabView, measuring parameters such as voltage, current, brightness, and luminous spectrum, and recording the maximum brightness L max And the external quantum efficiency EQE of the device is obtained by calculation;

[0155] The test method for life span T95@1000nit is: in CDA gas, under constant current or voltage drive, measure the time taken for the device brightness to decay to a certain proportion of the maximum brightness, and the time taken for the brightness to decay to 95% of the maximum brightness is defined as T95, and this life span is the measured life span. In order to shorten the life span test cycle, the device life span test is usually carried out at high brightness by accelerating device aging, and the life span at low brightness is obtained by fitting the decay fitting formula. For example, the life span at 1000nits is recorded as T95@1000nits, and the calculation formula is:

[0156]

[0157] Among them, T95 L The lifespan under low brightness, generally 1000nits, T95 H is the lifespan under high brightness, that is, the measured lifespan, L H is the maximum brightness that the device is accelerated to, L L Generally, it is 1000nits, A is the acceleration factor, which is 1.7. The constant current is 2mA.

[0158] Table 1:

[0159] <![CDATA[L max (cd / m 2 )]]> EQE(%) T95@1000nit(h) Example 1 4711 13.8 26.1 Example 2 4398 10.7 21.1 Example 3 4422 11.4 22.5 Example 4 4122 12.1 21.7 Example 5 4785 12.5 26.9 Example 6 3170 8.33 12.4 Example 7 2815 6.35 9.29 Comparative Example 1 922 2.11 2.25 Comparative Example 2 1051 1.20 0.92 Comparative Example 3 815 1.35 0.64 Comparative Example 4 710 2.54 0.52 Comparative Example 5 1293 3.75 6.1 Comparative Example 6 948 2.01 1.91 Comparative Example 7 676 1.63 0.92

[0160] From Table 1 we can see that:

[0161] Compared with the optoelectronic devices of comparative examples 1 to 7, the optoelectronic devices of embodiments 1 to 7 have higher brightness, higher luminous efficiency and longer life. The reason may be that a zinc fluoride interface layer is provided between the electron transport layer and the cathode of the optoelectronic devices of embodiments 1 to 7. The zinc fluoride interface layer can separate the cathode from the electron transport layer, thereby preventing the cathode from reacting with the inorganic semiconductor particles in the electron transport layer and / or the ligands connected to the inorganic semiconductor particles and being damaged, thereby improving the stability and life of the optoelectronic device. In addition, the zinc fluoride can also reduce the electron injection barrier, thereby improving the electron mobility of the optoelectronic device, and further improving the brightness, luminous efficiency and stability of the optoelectronic device.

[0162] Compared with the optoelectronic devices of Comparative Examples 1 and 5 to 7, the optoelectronic devices of Examples 1 and 5 to 7 have higher brightness, higher luminous efficiency and longer lifespan, which may be because a zinc fluoride interface layer is provided between the electron transport layer and the cathode of the optoelectronic devices of Examples 1 and 5 to 7, while no zinc fluoride interface layer is provided between the electron transport layer and the cathode of the optoelectronic devices of Comparative Examples 1 and 5 to 7;

[0163] Compared with the optoelectronic devices of Comparative Examples 2 to 3, the optoelectronic device of Example 1 has higher brightness, higher luminous efficiency and longer life. The reason may be that the material of the interface layer of the optoelectronic device of Example 1 is zinc fluoride, while the materials of the interface layers of Comparative Examples 2 to 3 are CsF and LiF, respectively. It can be seen that zinc fluoride as an interface layer can more effectively improve the brightness, luminous efficiency and life of the optoelectronic device;

[0164] Compared with the optoelectronic device of Comparative Example 4, the optoelectronic device of Example 1 has higher brightness, higher luminous efficiency and longer life. It can be seen that setting zinc fluoride as an interface layer between the electron transport layer and the cathode can more effectively improve the brightness, luminous efficiency and life of the optoelectronic device than doping zinc fluoride in the electron transport layer.

[0165] The optoelectronic devices and their preparation methods, and display devices provided in the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the methods and core ideas of the present application. At the same time, for technical personnel in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A photoelectric device, comprising an anode and a cathode arranged opposite to each other, and also comprising an electron transport layer arranged between the anode and the cathode, characterized in that: The photoelectric device further comprises an interface layer, wherein the interface layer is located between the cathode and the electron transport layer, and the interface layer comprises zinc fluoride.

2. The optoelectronic device according to claim 1, characterized in that The thickness of the interface layer is 5 to 15 nm, preferably, the thickness of the interface layer is 8 to 12 nm; and / or The zinc fluoride is zinc fluoride particles, and the average particle size of the zinc fluoride particles is 3 to 6 nm.

3. The optoelectronic device according to claim 1, characterized in that The material of the electron transport layer includes inorganic semiconductor particles, wherein: The average particle size of the inorganic semiconductor particles is in the range of 3 to 5 nm; and / or The inorganic semiconductor particles include one or more of doped metal oxide particles, undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials, and IB-IIIA-VIA semiconductor materials.

4. The optoelectronic device according to claim 3, characterized in that The material of the non-doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5; and / or The metal oxide in the doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, and the doping elements in the doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga; and / or The IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, and CdS; and / or The IIIA-VA semiconductor material includes one or more of InP and GaP; and / or The IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS; and / or In the doped metal oxide particles, the mass fraction of the doping element in the doped metal oxide particles is 1 to 20%.

5. The optoelectronic device according to claim 1, wherein: The interface layer consists of the zinc fluoride.

6. The optoelectronic device according to claim 1, wherein: The optoelectronic device further includes a light-emitting layer located between the anode and the electron transport layer.

7. The optoelectronic device according to claim 6, characterized in that The anode includes a doped metal oxide electrode, a first composite electrode, a graphene electrode, a carbon nanotube electrode, a first metal single substance electrode or a first alloy electrode, the material of the doped metal oxide electrode includes one or more of indium doped tin oxide, fluorine doped tin oxide, antimony doped tin oxide, aluminum doped zinc oxide, gallium doped zinc oxide, indium doped zinc oxide, magnesium doped zinc oxide, aluminum doped magnesium oxide, and cadmium doped zinc oxide, the first composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS or ZnS / Al / ZnS, the material of the first metal single substance electrode includes one or more of Ni, Pt, Au, Ir, Cu, Mo, and / or The cathode includes a second metal single substance electrode, a second alloy electrode or a second composite electrode, the material of the second metal single substance electrode includes Ag, Ca, Ba, Al or Mg; the second alloy electrode includes one or more of Au:Mg and Ag:Mg; the second composite electrode includes Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al or BaF2 / Ca / Al; and / or The material of the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material, and the organic light-emitting material includes one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing covalent bonds of BN, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot luminescent material includes one or more of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material. The material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Zn STe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound includes SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, One or more of PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, the III-V group compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlN As, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, and the general structural formula of the inorganic perovskite semiconductor is AMX3, wherein A is Cs; + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; and / or The photoelectric device also includes a hole transport layer located between the anode and the light-emitting layer, and the material of the hole transport layer includes 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3 -methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4- 4'-diamine, spiro NPB, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines , 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; and / or The photoelectric device also includes a hole injection layer located between the anode and the light-emitting layer, and the material of the hole injection layer includes one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide.

8. A method for preparing a photoelectric device, characterized in that: include: Providing a photovoltaic device preform, the photovoltaic device preform comprising a stacked anode and an electron transport layer; Providing zinc fluoride, and disposing the zinc fluoride on the electron transport layer to obtain an interface layer; Prepare a cathode on the surface of the interface layer away from the anode to obtain a photoelectric device; or, Providing a photovoltaic device preform, wherein the photovoltaic device preform comprises a cathode; Providing zinc fluoride, and disposing the zinc fluoride on the cathode to obtain an interface layer; A stacked electron transport layer and an anode are prepared on the surface of the interface layer away from the cathode to obtain a photoelectric device.

9. The preparation method according to claim 8, characterized in that: The photoelectric device preform comprises a stacked anode, a light-emitting layer and an electron transport layer; or The step of preparing a stacked electron transport layer and an anode on a surface of the interface layer away from the cathode comprises: preparing a stacked electron transport layer, a light emitting layer and an anode on a surface of the interface layer away from the cathode.

10. The preparation method according to claim 8, characterized in that: The photoelectric device preform comprises a stacked anode, a hole functional layer, a light-emitting layer and an electron transport layer; or The step of preparing a stacked electron transport layer and an anode on a surface of the interface layer away from the cathode comprises: preparing a stacked electron transport layer, a light-emitting layer, a hole functional layer and an anode on a surface of the interface layer away from the cathode.

11. The preparation method according to claim 8, characterized in that: The method of disposing the zinc fluoride on the electron transport layer or the method of disposing the zinc fluoride on the cathode is evaporation, wherein, The evaporation rate is 1 to 10 angstroms per minute; and / or The evaporation time is 30 to 60 minutes.

12. A display device, characterized in that: The display device comprises the optoelectronic device according to any one of claims 1 to 7, or the display device comprises the optoelectronic device prepared by the preparation method according to any one of claims 8 to 11.

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