Inspection device and mounting table

Abstract

Provided is an inspection apparatus for inspecting a device to be inspected, the device to be inspected being a rear-surface-irradiation-type imaging device formed on an object to be inspected, light being capable of being incident on the imaging device from a rear surface of the imaging device, which is a surface on the opposite side from the side on which a wiring layer is provided, and light being capable of being emitted from the rear surface of the imaging device to the object to be inspected. The inspection apparatus includes a mounting table for supporting the object to be inspected so as to face the rear surface of the imaging device, the mounting table including: a top plate made of a light-transmitting material and having a mounting surface on which the object to be inspected is mounted; an irradiation unit disposed at a position facing the object to be inspected across the top plate and configured to irradiate light to the object to be inspected placed on the placement surface; and a temperature adjustment unit for adjusting the temperature of the device to be inspected of the object to be inspected placed on the placement surface, and the top plate has a pattern formed on at least one of the placement surface and a surface on the opposite side thereof and having a thickness capable of transmitting light and made of a metal material.

Description

Technical Field

[0001] The present invention relates to an inspection device and a mounting table. Background Art

[0002] The inspection device of Patent Document 1 is capable of inspecting an imaging device formed on an inspected object by causing light to enter the imaging device and making the contact terminal electrically contact with the wiring layer of the imaging device. In Patent Document 1, the imaging device is an imaging device that allows light to enter from the back side of the imaging device, which is the opposite side of the surface on which the wiring layer is provided. The inspection device of Patent Document 1 includes: a mounting table formed by a light-transmitting component, which is used to mount the inspected object in a manner opposite to the back side of the imaging device; and a light irradiation mechanism, which is arranged in a manner opposite to the inspected object across the mounting table and has a plurality of LEDs directed toward the inspected object.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-106491 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] The technology of the present invention enables accurate measurement of the temperature of an imaging device without causing adverse effects on light irradiated to the imaging device during inspection of a back-illuminated imaging device.

[0008] Means for solving technical problems

[0009] One embodiment of the present invention is an inspection device for inspecting an inspection object device, the inspection device being characterized in that: the inspection object device is a back-illuminated imaging device formed on an inspection object body, and light can be incident on the imaging device from the back side of the surface of the imaging device on the opposite side of the side where a wiring layer is provided, the inspection device includes a mounting table, which is used to support the inspection object in a manner opposite to the back side of the imaging device, the mounting table includes: a top plate made of a light-transmitting material, which has a mounting surface for mounting the inspection object body; an irradiation unit, which is arranged at a position opposite to the inspection object body with the top plate interposed therebetween, and is used to irradiate light to the inspection object body mounted on the mounting surface; and a temperature adjustment unit, which is used to adjust the temperature of the inspection object device of the inspection object body mounted on the mounting surface, the top plate having a pattern of a thickness that allows light to pass formed on at least either the mounting surface or the surface on the opposite side thereof, which is made of a metal material.

[0010] Effects of the Invention

[0011] According to the present invention, in the inspection of a back-illuminated imaging device, the temperature of the imaging device can be accurately measured without causing adverse effects on light irradiated to the imaging device. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a plan view schematically showing the structure of a substrate as an inspection object on which a back-illuminated imaging device is formed.

[0013] Figure 2 It is a cross-sectional view schematically showing the structure of a back-illuminated imaging device.

[0014] Figure 3 It is a perspective view schematically showing the structure of a probe as the inspection device according to the first embodiment.

[0015] Figure 4 This is a front view schematically showing the structure of a probe as the inspection device according to the first embodiment.

[0016] Figure 5 It is a cross-sectional view schematically showing the structure of the stage.

[0017] Figure 6 It is a top view of the top plate.

[0018] Figure 7 It is a diagram showing the structure of a temperature measurement circuit of a sensor pattern.

[0019] Figure 8 FIG. 1 is a diagram showing another example of the connection between the sensor pattern and the current source.

[0020] Fig. 9 This is a cross-sectional view schematically showing the structure of a stage included in a probe of an inspection device according to a second embodiment.

[0021] Fig.10 It is a diagram showing the configuration of a circuit related to a sensor pattern in the second embodiment.

[0022] Fig.11 It is a diagram showing another example of the irradiation unit.

[0023] Fig.12 It is a cross-sectional view schematically showing the structure of a stage included in a probe of an inspection device according to a third embodiment. DETAILED DESCRIPTION

[0024] In the semiconductor manufacturing process, a plurality of semiconductor devices having a predetermined circuit pattern are formed on a substrate such as a semiconductor wafer (hereinafter referred to as a "wafer"). The formed semiconductor devices are inspected for electrical characteristics and the like, and these semiconductor devices are screened into good and defective products. The inspection of semiconductor devices is performed, for example, using an inspection device called a prober, etc., in the substrate state before each semiconductor device is divided.

[0025] In the inspection device, a probe card having a plurality of probes as needle-shaped contact terminals is arranged above a stage for supporting a substrate. During inspection, the probe card is brought close to the wafer on the stage, and each probe of the probe card is brought into contact with each electrode of the semiconductor device formed on the substrate. In this state, an electrical signal is supplied to the semiconductor device via each probe from a test head arranged on the upper part of the probe card. Then, based on the electrical signal received from the semiconductor device by the test head via each probe, the semiconductor device is screened to see whether it is a defective product.

[0026] When the semiconductor device to be inspected is an imaging device such as a CMOS sensor, unlike other general semiconductor devices, the inspection is performed while irradiating light onto the imaging device.

[0027] In recent years, a back-illuminated imaging device has been developed as an imaging device that can receive light incident from the back side opposite to the front side of the imaging device where a wiring layer is formed.

[0028] In an inspection device for inspecting a back-illuminated imaging device, the mounting table supports a substrate in a manner opposed to the back surface of the imaging device. In addition, in an inspection device for inspecting a back-illuminated imaging device, the mounting table includes: a top plate made of a light-transmitting material having a mounting surface for mounting the substrate; and an irradiation unit disposed below the top plate for irradiating light to the substrate mounted on the mounting surface.

[0029] The irradiation unit includes, for example, a light guide plate having an opposing surface that is opposed to the substrate via a top plate, and a light source unit that is disposed in a region outside the side of the light guide plate and is used to emit light toward the light guide plate. In addition, in the irradiation unit, the light guide plate can reflect light emitted from the light source unit and incident from the side end surface of the light guide plate toward the opposing surface, and emit light from the opposing surface as planar light. In addition, hereinafter, the irradiation unit into which light is incident from the side end surface of the light guide plate is referred to as a side-incident type irradiation unit.

[0030] In addition, in the inspection of the back-illuminated imaging device, there is a case where a temperature adjustment unit for adjusting the temperature of the imaging device is provided on the mounting table of the inspection device so that the temperature of the imaging device is kept constant at a predetermined temperature. The temperature adjustment unit is provided, for example, below the top plate and below the irradiation unit of the side-incident type, and can heat or cool the substrate through the top plate. In order to perform the temperature adjustment as described above, it is necessary to measure the temperature of the imaging device.

[0031] However, when a temperature sensor such as a thermocouple is provided on the placement surface, that is, the upper surface, of the top plate in order to measure the temperature of the imaging device, light from the irradiation unit may be blocked by the temperature sensor.

[0032] In addition, when the substrate is heated or cooled by the temperature adjustment unit provided below the side-incident type irradiation unit as described above, a temperature sensor may be provided on the lower surface of the light guide plate in order to measure the temperature of the imaging device. However, when this structure is adopted, if the light guide plate is formed of glass or the like which is inexpensive but has low thermal conductivity, the temperature of the imaging device cannot be accurately measured.

[0033] Therefore, the technology of the present invention enables accurate measurement of the temperature of an imaging device without causing adverse effects on light irradiated to the imaging device during inspection of a back-illuminated imaging device.

[0034] Hereinafter, the inspection device and the mounting table of the present embodiment will be described with reference to the drawings. In addition, in this specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals to omit repeated description.

[0035] In the technology of the present embodiment, the device to be inspected is a back-illuminated imaging device, and therefore the back-illuminated imaging device will be described first.

[0036] [Back-illuminated camera]

[0037] Figure 1 is a plan view schematically showing the structure of a substrate as an inspection object on which a back-illuminated imaging device is formed. Figure 2 It is a cross-sectional view schematically showing the structure of a back-illuminated imaging device.

[0038] like Figure 1 As shown in FIG. 1 , a plurality of back-illuminated imaging devices D are formed on a substantially disk-shaped wafer W as an example of a substrate.

[0039] The back-illuminated imaging device D is a solid-state imaging element, such as Figure 2As shown, it has: a photoelectric conversion unit PD as a photodiode; and a wiring layer PL including a plurality of wirings PLa. In addition, light can be incident on the back-illuminated imaging device D from the side of the back-illuminated imaging device D opposite to the side on which the wiring layer PL is provided, that is, the back side of the wafer W. The back-illuminated imaging device D can receive the light incident from the back side of the wafer W through the on-chip lens L and the filter F using the photoelectric conversion unit PD. The filter F includes a red filter FR, a blue filter FB, and a green filter FG.

[0040] In addition, an electrode E is formed on the front side Da of the back-illuminated imaging device D, that is, the front side of the wafer W, and the electrode E is electrically connected to the wiring PLa of the wiring layer PL. The wiring PLa is used to input an electrical signal to a circuit element inside the back-illuminated imaging device D, and output an electrical signal from the circuit element to the outside of the back-illuminated imaging device D. The wiring layer PL may include a pixel transistor for controlling a signal related to the photoelectric conversion unit.

[0041] (First Embodiment)

[0042] [Inspection device]

[0043] Next, the inspection device according to the first embodiment will be described.

[0044] Figure 3 and Figure 4 1 and 2 are a perspective view and a front view respectively showing the outline of the structure of the probe 1 as the inspection device of the first embodiment. Figure 4 In order to show Figure 3 Components built into the storage chamber and loading device of the detector 1 described later are partially shown in cross section.

[0045] The detector 1 is a component for inspecting the electrical characteristics of each of a plurality of back-illuminated imaging devices D (hereinafter, sometimes abbreviated as imaging devices D) formed on a wafer W. Figure 3 and Figure 4 As shown, the probe 1 includes: a storage chamber 2 ; a loading device 3 disposed adjacent to the storage chamber 2 ; and a tester 4 disposed so as to cover the storage chamber 2 .

[0046] The storage chamber 2 is a hollow housing, and has a stage 10 as a mounting table. As described later, the stage 10 supports the wafer W so that the back surface of the imaging device D faces the stage 10 .

[0047] The stage 10 is movable in the horizontal direction and the vertical direction, and can adjust the relative position of a probe card 11 to be described later and the wafer W so that the electrodes E on the front surface of the wafer W can contact the probes of the probe card to be described later.

[0048] A probe card 11 is disposed above the stage 10 in the storage chamber 2 so as to face the stage 10. The probe card 11 has a plurality of needle-shaped probes 11a as contact terminals. Each probe 11a is formed to be contactable with a corresponding electrode E on the front surface of the wafer W.

[0049] The probe card 11 is connected to the tester 4 via the interface 12. When inspecting the imaging device D, each probe 11a contacts the corresponding electrode E, supplies electric power input from the tester 4 via the interface 12 to the imaging device D, or transmits a signal from the imaging device D to the tester 4 via the interface 12.

[0050] The loader 3 can take out the wafer W stored in a FOUP (not shown) as a transport container and transport it to the stage 10 of the storage chamber 2. In addition, the loader 3 can receive the wafer W after the inspection of the electrical characteristics of the imaging device D from the stage 10 and store it in the FOUP.

[0051] The loading device 3 has a control unit 13 for performing various controls, etc. The control unit 13 is composed of a computer including a processor such as a CPU and a memory, and has a program storage unit. The program storage unit stores a program for controlling the operation of each component of the detector 1 during the electrical characteristic inspection. In addition, the program may be recorded in a computer-readable storage medium and installed from the storage medium to the control unit 13. The storage medium may be a temporary storage medium or a non-temporary storage medium.

[0052] In addition, the control unit 13 is connected to the stage 10 via a wiring 14, and is connected to the tester computer 16 via a wiring 15. The control unit 13 can control the irradiation operation of the light irradiation mechanism described later of the stage 10 based on the input signal from the tester computer 16. In addition, the control unit 13 can control the heater 51 described later of the stage 10. In addition, the control unit 13 can also be set in the storage room 2.

[0053] The tester 4 has a test board (not shown) for reproducing a part of the circuit structure of the main board on which the imaging device D is mounted. The test board is connected to the tester computer 16. The tester computer 16 determines whether the imaging device D is good or not based on the signal from the imaging device D. In the tester 4, by replacing the test board, the circuit structure of various main boards can be reproduced.

[0054] The detector 1 further includes a user interface 17. The user interface 17 is used to display information to the user or allow the user to input instructions, and is composed of, for example, a display panel having a touch panel and a keyboard.

[0055] In the probe 1 having the above-mentioned components, when inspecting the electrical characteristics of the imaging device D, the tester computer 16 sends data to a test board connected to the imaging device D via each probe 11a. Then, the tester computer 16 determines whether the sent data is correctly processed by the test board based on the electrical signal from the test board.

[0056] [Stage 10]

[0057] Next, the structure of the stage 10 will be described. Figure 5 It is a cross-sectional view schematically showing the structure of the stage 10 . Figure 6 It is a top view of the top plate 30 which will be described later. Figure 7 It is a diagram showing the configuration of a temperature measurement circuit of a sensor pattern described later.

[0058] The stage 10 is a member for supporting the wafer W in such a manner that the back side of the imaging device D faces the stage 10. Figure 5 As shown, there are a top plate 30 , an irradiation unit 40 and a base 50 .

[0059] The top plate 30 is a flat plate-shaped member made of a light-transmitting material, and its upper surface 30a serves as a mounting surface for mounting the wafer W. The top plate 30 can diffuse the planar light emitted from the irradiation unit 40 toward the wafer W while transmitting the light. That is, the top plate 30 is formed so as to function as a diffusion plate, for example. In addition, the top plate 30 is formed in a square shape, for example, in which the length of one side is larger than the diameter of the wafer W when viewed from above.

[0060] A more detailed structure of the top plate 30 will be described later.

[0061] The “light-transmitting material” mentioned above refers to a material that can transmit light having a wavelength within the inspection range (that is, light from the irradiation unit 40 ), and is, for example, glass.

[0062] The irradiation unit 40 is disposed at a position facing the wafer W on the mounting surface 30 a across the top plate 30 , that is, below the top plate 30 , and irradiates light to the wafer W mounted on the mounting surface 30 a .

[0063] The irradiation unit 40 includes, for example, a light guide plate 41 and a light source unit 42 .

[0064] The light guide plate 41 has an opposing surface 41a that opposes the wafer W on the mounting surface 30a via the top plate 30, and the light guide plate 41 is, for example, a member formed in the shape of a flat plate. The shape and size of the light guide plate 41 when viewed from above are, for example, the same as those of the top plate 30. In addition, the light guide plate 41 has a diffusion point 41b. The diffusion point 41b is formed, for example, on the surface opposite to the opposing surface 41a of the light guide plate 41, that is, on the lower surface. The light guide plate 41 is arranged in such a manner that when planar light is emitted to the wafer W as described later, the imaging device formation area of ​​the wafer W is included in the area where the planar light is emitted when viewed from above.

[0065] Furthermore, a reflection plate (not shown) for reflecting light from the light source unit 42 may be provided on the lower surface of the light guide plate 41 so as to be in contact with the lower surface.

[0066] The light source unit 42 is provided in the lateral outer region of the light guide plate 41 to emit light toward the side end surface of the light guide plate 41. The light source unit 42 includes, for example, a plurality of LEDs (not shown) provided along each side of the light guide plate 41.

[0067] In addition, in this embodiment, in order to release the heat of the LED of the light source unit 42 to the outside of the stage 10, a heat sink 43 is provided on the back of a substrate (not shown) for supporting the LED. The heat sink 43 is formed of, for example, a metal material. A path for a refrigerant such as water for cooling the LED of the light source unit 42 to flow may be formed in the heat sink 43.

[0068] In the detector 1, light emitted from the LED of the light source unit 42 and incident from the side end surface of the light guide plate 41 can be reflected and diffused by the diffusion point 41b, emitted as planar light from the opposite surface 41a opposite to the chip W, passed through the top plate 30, and was incident on the imaging device D of the chip W.

[0069] The LED of the light source unit 42 can emit light having a wavelength within the inspection range. The light having a wavelength within the inspection range may be light having a wavelength in the visible light region, or may be light outside the visible light region such as infrared light, depending on the type of the imaging device D.

[0070] The base 50 is disposed at a position opposite to the wafer W on the mounting surface 30a across the top plate 30 and the light guide plate 41, that is, below the light guide plate 41, and is used to support the top plate 30 and the irradiation unit 40. For example, the top plate 30 is held by the irradiation unit 40 by bonding with a transparent adhesive material, and the irradiation unit 40 is held by the base 50 by bonding with an adhesive material.

[0071] In addition, the base 50 has a built-in heater 51 as a temperature adjustment unit for adjusting the temperature of the imaging device D of the wafer W placed on the placement surface 30a. Specifically, the heater 51 can adjust the temperature of the imaging device D by heating the wafer W placed on the placement surface 30a. For example, a resistance heating heater can be used for the heater 51. The heater 51 is controlled by the control unit 13.

[0072] In addition, the heating amount of the heater 51 can be the same within the surface of the upper surface of the base 50, or the upper surface of the base 50 can be divided into multiple heating areas, and a heater 51 is provided for each heating area, so that the heating amount of the heater 51 can be adjusted according to each heating area.

[0073] Furthermore, in the present embodiment, a component such as a heater 51 for heating the chip W is provided as a temperature regulating unit, but a component for cooling the chip W (e.g., a flow path for a cooling refrigerant) may be provided instead of the heater 51, or a component for cooling the chip W (e.g., a flow path for a cooling refrigerant) may be provided in addition to the heater 51.

[0074] Furthermore, in the stage 10, a sensor pattern SP is formed on the mounting surface 30a of the top plate 30. The sensor pattern SP is a pattern made of a metal material with a thickness that allows light to pass through. Figure 6 As shown, the top plate 30 is divided into a plurality of regions in a plan view. In the example of the figure, the placement surface 30a of the top plate 30 is divided into 16 regions Z1 to Z16, and sensor patterns SP1 to SP16 are formed in the regions Z1 to Z16, respectively.

[0075] The sensor pattern SP may be formed on the lower surface of the top plate 30 instead of the mounting surface 30a of the top plate 30, or may be formed on the lower surface of the top plate 30 in addition to the mounting surface 30a of the top plate 30.

[0076] The metal material used in the sensor pattern SP includes, for example, at least one of silver, copper, and tungsten, and the temperature coefficient α of the resistance is preferably 3.9×10 -3 [1 / °C] or so. In addition, although the measurement related to the resistance of the sensor pattern SP is performed as described later, when the resistance of the sensor pattern SP is about 100Ω at room temperature, there is no problem with the accuracy in the above measurement.

[0077] The thickness of the sensor pattern SP, which is a thickness that allows light to pass through, is, for example, 1 / 10 or less of the wavelength of the light used in the inspection. When the inspection wavelength is determined, the thickness that allows light to pass through is 1 / 2 of the wavelength of the light used in the inspection.

[0078] like Figure 7 As shown in FIG. 1 , the sensor pattern SP is connected to a voltmeter 101 as a measuring unit for measuring the resistance of the sensor pattern SP. Specifically, the sensor patterns SP1 to SP16 are connected to the voltmeter 101 via, for example, a switching element 102 .

[0079] The switch element 102 is used to switch the sensor pattern SP electrically connected to the voltmeter 101 .

[0080] The voltmeter 101 is used to measure the voltage applied to the sensor pattern SP. Specifically, the voltmeter 101 is used to measure the voltage applied to each sensor pattern SP. More specifically, the voltmeter 101 is used to measure the voltage applied to the sensor pattern SP electrically connected to the voltmeter 101 through the switch element 102.

[0081] The sensor pattern SP is connected to the current source 111. Specifically, the sensor patterns SP1 to SP16 are connected to the current source 111 via the switch element 112. The switch element 112 is used to switch the sensor pattern SP electrically connected to the current source 111. The current source 111 is used to supply a DC current of a predetermined magnitude to the sensor pattern SP electrically connected to the current source 111 via the switch element 102.

[0082] The voltmeter 101, the current source 111, and the switching elements 102 and 112 are controlled by the control unit 13. In addition, the measurement result of the voltmeter 101 is output to the control unit 13.

[0083] The control unit 13 can calculate the temperature of the sensor pattern SP as the temperature of the imaging device D based on the measurement result of the sensor pattern SP by the voltmeter 101. Specifically, the control unit 13 can calculate the temperature of the sensor pattern SP as the temperature of the imaging device D based on the measurement result of the sensor pattern SP in the region corresponding to the imaging device D among the plurality of regions Z1 to Z16 of the mounting surface 30a by the voltmeter 101.

[0084] The method of calculating the temperature of the sensor pattern SP based on the measurement result of the sensor pattern SP by the voltmeter 101 (specifically, the measurement of the voltage applied to the sensor pattern SP) is as follows, for example. That is, first, the resistance of the sensor pattern SP is calculated based on the measurement result of the voltage applied to the sensor pattern SP and the current (current value) supplied from the current source 111. Then, based on the calculated resistance of the sensor pattern SP, the temperature of the sensor pattern SP is calculated using the relationship between resistance and temperature acquired in advance.

[0085] Information necessary for calculating the temperature is stored in advance in a storage unit (not shown).

[0086] Note that the above-mentioned relational expression is stored in advance for each sensor pattern SP, and when calculating the temperature of the sensor pattern SP, the above-mentioned relational expression for the sensor pattern SP is used.

[0087] As described above, the sensor pattern SP is connected to the voltmeter 101 and the current source 111. The connection between the sensor pattern SP and the voltmeter 101 and the like is, for example, Figure 6 As shown, this is performed via the electrode pattern DP provided at the outer side of the sensor pattern SP in a plan view.

[0088] The sensor pattern SP is formed in a region overlapping with the wafer W in a plan view (specifically, a region overlapping with a portion of the wafer W where the imaging device is formed), and the electrode pattern DP is provided in a region outside the region.

[0089] In addition, the sensor pattern SP is formed in a narrow width, while the electrode pattern DP is formed in a wide width. Specifically, the sensor pattern SP has a pattern that meanders in a narrow width, while the electrode pattern DP has a continuous film-like pattern without gaps.

[0090] The thickness and material of the electrode pattern DP are, for example, the same as those of the sensor pattern SP, but may be different. However, by making the thickness and material of the electrode pattern DP the same as those of the sensor pattern SP, the electrode pattern DP and the sensor pattern SP can be formed simultaneously by sputtering or the like.

[0091] As long as the electrode pattern DP can independently measure the resistance of each sensor pattern SP, a part of the electrode pattern DP may be shared among the sensor patterns SP.

[0092] [Inspection Processing]

[0093] Next, an example of inspection processing of the wafer W using the probe 1 is described. In the following description, it is assumed that one imaging device D is inspected in one inspection. However, a plurality of imaging devices D may be inspected at once in one inspection using the probe 1. The following inspection processing is performed under the control of the control unit 13.

[0094] For example, first, a wafer W is taken out from a FOUP of the loader 3 and transported into the storage chamber 2. Then, the wafer W is placed on the placement surface 30a on which the sensor pattern SP is formed of the top plate 30 of the stage 10 in such a manner that the back surface of the imaging device D formed on the wafer W faces the stage 10 and the wafer W abuts against the stage 10.

[0095] Next, the stage 10 is moved, and the probe 11 a provided above the stage 10 comes into contact with the electrode E of the imaging device D as the inspection object.

[0096] Then, light is irradiated from the irradiation unit 40. Specifically, all LEDs of the light source unit 42 are turned on. As a result, light is incident from each LED onto the side end surface of the light guide plate 41. The light incident onto the light guide plate 41 is reflected and diffused toward the top plate 30 by the diffusion point 41b, and is emitted in a planar shape from the opposite surface 41a of the light guide plate 41 that is opposite to the wafer W.

[0097] The light emitted from the light guide plate 41 is diffused by the top plate 30 , passes through the top plate 30 , and enters the wafer W.

[0098] Simultaneously with the irradiation of light, a signal for inspection is input to the probe 11a. In this way, the imaging device D is inspected.

[0099] In the above inspection, the voltage applied to the sensor pattern SP is measured by the voltmeter 101, and the control unit 13 calculates the temperature of the sensor pattern SP as the temperature of the imaging device D based on the measurement result of the voltmeter 101. Specifically, the control unit 13 specifies the area closest to the center position of the imaging device D to be inspected from the plurality of areas Z1 to Z16 of the mounting surface 30a, and measures the voltage applied to the sensor pattern SP formed in the area by the voltmeter 101. Furthermore, the control unit 13 calculates the temperature of the sensor pattern SP formed in the area closest to the center position of the imaging device D based on the measurement result of the voltmeter 101, and regards it as the temperature of the imaging device D to be inspected.

[0100] Furthermore, in the above inspection, the heater 51 can be controlled by the control unit 13 based on the calculation result of the temperature. Specifically, for example, in the above inspection, the heater 51 can be controlled by the control unit 13 based on the calculation result of the temperature so that the temperature of the sensor pattern SP, that is, the temperature of the imaging device D as the inspection object, is kept constant at the target temperature T.

[0101] Thereafter, the same processing as described above is repeated until the inspection of all the imaging devices D is completed.

[0102] [Main effects of this embodiment]

[0103] As described above, in this embodiment, the stage 10 includes: the top plate 30 having the mounting surface 30a for mounting the wafer W; the irradiation unit 40, which is arranged at a position opposite to the wafer W across the top plate 30 and irradiates light to the wafer W mounted on the mounting surface 30a; and the heater 51, which is used to adjust the temperature of the imaging device D of the wafer W mounted on the mounting surface 30a. In addition, the top plate 30 has a sensor pattern SP made of a metal material and having a thickness that allows light to pass through formed on at least one of the mounting surface 30a of the top plate 30 and the surface on the opposite side thereof. Therefore, if the measurement related to the resistance of the sensor pattern SP is performed, the temperature of the sensor pattern SP can be calculated as the temperature of the imaging device D based on the measurement result. The sensor pattern SP is formed on the top plate 30, and the sensor pattern SP is close to the wafer W. Therefore, the temperature of the sensor pattern SP is substantially equal to the temperature of the wafer W, that is, the temperature of the imaging device D. That is, according to this embodiment, the temperature of the imaging device D can be accurately detected. Furthermore, the sensor pattern SP is formed to have a thickness that allows light to pass therethrough, so that the inspection light that passes through the top plate 30 toward the wafer W is not blocked by the sensor pattern SP. As described above, according to this embodiment, the temperature of the imaging device D can be accurately detected without adversely affecting the light irradiated thereto.

[0104] Furthermore, when the sensor pattern SP is formed on the mounting surface 30a of the top plate 30, the wafer W is mounted on the sensor pattern SP, and the sensor pattern SP is closer to the wafer W. Therefore, the temperature of the imaging device D can be measured more accurately based on the measurement result related to the resistance of the sensor pattern SP. In addition, when the sensor pattern SP is formed on the mounting surface 30a of the top plate 30, the above-mentioned effect can be obtained regardless of the material of the top plate 30 (specifically, the material of the base material of the top plate 30). That is, regardless of the material of the top plate 30, the temperature of the imaging device D can be detected more accurately without causing adverse effects on the light irradiated to the imaging device D.

[0105] Furthermore, since the temperature of the imaging device can be accurately detected as described above, the temperature of the imaging device can be kept constant at a desired temperature by controlling the heater 51 based on the detection result.

[0106] Furthermore, in the present embodiment, the sensor pattern SP is connected to the voltmeter 101 and the like via the electrode pattern DP. The electrode pattern DP is formed in a region outside the region overlapping with the imaging device D in a plan view, and is formed to be wider than the width of the sensor pattern SP, so that an operation for connecting the sensor pattern SP and the voltmeter 101 and the like (for example, an operation for connecting a terminal of a wiring to the electrode pattern DP) can be easily performed. Furthermore, the electrode pattern DP is formed to be wider than the width of the sensor pattern SP, so that the resistance of the electrode pattern DP can be suppressed from affecting the result of the measurement related to the resistance of the sensor pattern SP by the voltmeter 101. Therefore, the temperature of the imaging device D can be detected more accurately.

[0107] <Another example of the connection method of the sensor pattern SP>

[0108] Figure 8 11 is a diagram showing another example of the connection between the sensor pattern SP and the current source 111 .

[0109] In the above example, all sensor patterns SP1 to SP16 are connected to a common voltmeter 101. Alternatively, the sensor patterns SP1 to SP16 may be divided into a plurality of groups, and each group may be provided with a voltmeter 101. In this case, a different current source 111 may be provided for each group, or the current source 111 may be shared by all groups.

[0110] In addition, it can be Figure 8 As shown, the sensor patterns SP1 to SP16 are connected in series to the current source 111. In this case, the voltmeter 101 is provided for each sensor pattern SP, for example.

[0111] Alternatively, the sensor patterns SP1 to SP16 may be divided into a plurality of groups, and the sensor patterns SP belonging to the same group may be connected in series to the current source 111. In this case, a different current source 111 may be provided for each group, or the current source 111 may be shared by all groups and connected to the plurality of groups in parallel.

[0112] (Second Embodiment)

[0113] [Stage 10A]

[0114] Fig. 9 It is a cross-sectional view schematically showing the structure of a stage 10A included in a probe of an inspection device according to the second embodiment. Fig.10 It is a diagram showing the configuration of a circuit related to the sensor pattern SP.

[0115] In the first embodiment, a heater 51 is provided in the base 50. In the present embodiment, Fig. 9As shown in FIG. 1 , no heater is provided on the base 50A, but the sensor pattern SP is configured to also serve as a heater.

[0116] In addition, in the case of this embodiment, if Fig.10 As shown in FIG. 1 , the sensor pattern SP is connected to a voltage regulator 201 for regulating a voltage applied to the sensor pattern SP. Specifically, for example, the sensor patterns SP1 to SP16 are connected in series to the voltage regulator 201 .

[0117] Furthermore, in the present embodiment, an ammeter 202 for measuring the current flowing through the sensor patterns SP1 to SP16 is provided.

[0118] The voltage regulator 201 and the ammeter 202 are controlled by the control unit 13. In addition, the measurement result of the ammeter 202 is output to the control unit 13.

[0119] In this embodiment, as in the first embodiment, the voltage applied to the sensor pattern SP is measured by the voltmeter 101. In addition, in this embodiment, the current flowing through the sensor pattern SP is measured by the ammeter 202. Then, in this embodiment, the control unit 13 calculates the resistance of the sensor pattern SP based on the measurement results of the voltmeter 101 and the measurement results of the ammeter 202. Then, based on the calculated resistance of the sensor pattern SP, the temperature of the sensor pattern SP is calculated using the relationship between resistance and temperature acquired in advance.

[0120] In addition, in this embodiment, the control unit 13 can control the voltage regulator 201 based on the calculated temperature of the sensor pattern SP to adjust the voltage applied to the sensor pattern SP also serving as a heater. Thus, the temperature of the sensor pattern SP, that is, the temperature of the imaging device D to be inspected, can be kept constant at the target temperature T.

[0121] In addition, when the sensor pattern SP also serves as a heater as in the present embodiment, a Figure 5 The heater 51 is provided.

[0122] (Modification of the Irradiation Section)

[0123] Fig.11 It is a diagram showing another example of the irradiation unit.

[0124] Fig.11 The irradiation unit 40A includes a light source unit 300 which is disposed at a position opposite to the wafer W via the top plate 30 and can emit light toward the top plate 30 , that is, toward the wafer W.

[0125] The light source unit 300 includes a plurality of LEDs (Light Emitting Diodes) 301 as light sources, a substrate 302 , and a heat sink 303 .

[0126] Each of the LEDs 301 points in a direction toward the wafer W and can emit light of a wavelength within an inspection range.

[0127] In plan view, the region where the LEDs 301 are provided (hereinafter referred to as "LED formation region") overlaps with the wafer W mounted on the stage 10, and the size of the LED formation region is substantially equal to the wafer W. The LEDs 301 are provided at equal intervals in the LED formation region.

[0128] The light emission intensity of the LED 301 can be adjusted, for example, for each LED 301. Alternatively, the LED formation region may be divided into a plurality of regions, and the light emission intensity of the LED 301 may be adjusted for each region.

[0129] The substrate 302 is a member for holding the LED 301 , and is formed with a wiring pattern (not shown) for controlling the LED 301 .

[0130] The heat sink 303 is a member for releasing the heat of the LED 301 to the outside of the stage 10B, and is formed of, for example, a metal material. A path for circulating a coolant such as water for cooling the LED 301 may be formed in the heat sink 303 .

[0131] In the case of this example, the top plate 30 does not need to function as a diffusion plate.

[0132] By using the irradiation unit 40A of this example, it is possible to irradiate the imaging device D as the inspection object with inspection light of an intensity closer to a desired value compared to the above-mentioned irradiation unit 40. Figure 5 In the stage 10, use Fig.11 The irradiation unit 40A is replaced by the irradiation unit 40, but the LED 401 of the irradiation unit 40A is affected by the heat from the heater 51, making it difficult to make the intensity of the light irradiated to the wafer W a desired value. Fig.11 In the example of FIG. 1 , the sensor pattern SP functions as a heater, and therefore, the LED 401 of the irradiation unit 40A is less affected by the sensor pattern SP functioning as a heater.

[0133] (Third Embodiment)

[0134] [Stage 10C]

[0135] Fig.12It is a cross-sectional view schematically showing the structure of a stage 10C included in a probe of an inspection device according to a third embodiment.

[0136] Fig.12 The stage 10C includes, in addition to the irradiation unit 40 and the base 50 , a top plate 30A, a base member 400 , and a frame 410 .

[0137] Top plate 30A and Figure 5 The sensor pattern SP is similarly formed on the top plate 30 shown in FIG. 1 and FIG. 2 . Specifically, the sensor pattern SP is formed on the lower surface of the top plate 30A which is the surface on the opposite side to the placement surface 30a.

[0138] However, the top plate 30A and Figure 5 The top plate 30A is different from the top plate 30 shown in the figure, and is composed of a porous glass with an average pore size of less than 30nm and light transmittance. The porous glass used in the top plate 30A is, specifically, a porous glass obtained in the following manner. That is, first, the raw glass (for example, Na2O-B2O3-SiO2 glass) is melted, and then, phase separation is performed by heat treatment, etc., so that a mesh composed of another phase (Na2O-B2O3 glass) is formed in a flat plate composed of one phase (SiO2 glass). Then, only the above-mentioned mesh is removed by acid treatment, etc., so as to obtain a porous glass in which a flat plate composed of the above-mentioned one phase (SiO2 glass) is penetrated non-linearly by multiple holes in the thickness direction. This porous glass can be used for the top plate 30A.

[0139] The top plate 30A is made of porous glass as described above, so that when the wafer W is placed on the top plate 30A, a hole that passes through the top plate 30A nonlinearly in the thickness direction is formed not only in the region that does not overlap with the imaging device D in a plan view, but also in the region that overlaps with the imaging device D in a plan view. In other words, a hole that passes through the top plate 30A nonlinearly in the thickness direction is formed on the entire surface of the top plate 30A.

[0140] The base member 400 is made of a light-transmitting material and is disposed between the top plate 30A and the irradiation unit 40 to form a space S for exhaust between the base member 400 and the top plate 30A. Specifically, the light-transmitting material used in the base member 400 is glass having substantially the same thermal expansion coefficient as the wafer W.

[0141] For example, the base member 400 has a recessed portion 401 in the center that is recessed toward the side opposite to the top plate 30A side, and the top plate 30A blocks the opening of the recessed portion 401 to form a space S. The space S can be exhausted by the exhaust mechanism 500 .

[0142] The exhaust mechanism 500 is controlled by the control unit 13, and has an exhaust pipe 501 in addition to a vacuum exhaust pump 502. One end of the exhaust pipe 501 is connected to the space S via the connection hole 402, and the other end of the exhaust pipe 501 is connected to the vacuum exhaust pump 502. A buffer tank 503 is provided in the exhaust pipe 501. The exhaust pipe 501 must be designed to be multiple and have low conductance so that the buffer tank 503 becomes substantially the same space.

[0143] In addition, a support portion 403 is provided in the recessed portion 401, which extends from the bottom of the recessed portion 401 toward the top plate 30A and supports the top plate 30A. The support portion 403, for example, includes a plurality of support posts 403a extending toward the top plate 30A and formed in a columnar shape. Alternatively, the support portion 403 may include a support wall formed in a spiral shape when viewed from above instead of the support posts 403a. Alternatively, the support portion 403 may include both the support posts 403a and the above-mentioned spiral support wall.

[0144] In order to make the space S airtight, for example, an O-ring 404 is provided between the top plate 30A and the base member 400. Specifically, the O-ring 404 is provided between the peripheral edge of the top plate 30A and the peripheral edge of the base member 400. Alternatively, the top plate 30A and the base member 400 may be bonded together using an adhesive.

[0145] The irradiation unit 40 holding the base member 400 is held by the frame 410 by, for example, bonding with an adhesive. In addition, the frame 410 is held by the base 50 by, for example, bonding with an adhesive.

[0146] [Inspection Processing]

[0147] In the inspection process of the wafer W using the probe having the stage 10C, when the wafer W is placed on the placement surface 10a of the top plate 30A of the stage 10C, the exhaust mechanism 500 exhausts the space S between the top plate 30C and the base member 400. The top plate 30A is made of porous glass, and therefore, by exhausting the space S as described above, the back side of the wafer W and the top plate 30A can be exhausted through the holes of the porous glass of the top plate 30A, so that the wafer W is adsorbed and held on the top plate 30A.

[0148] In the present embodiment, the top plate 30A is made of porous glass, and holes for adsorbing the wafer W are formed on the entire surface of the top plate 30A including the region overlapping with the imaging device D in a plan view. Therefore, even if the exhaust flow rate from the space S between the top plate 30A and the base member 400 is low, the wafer W can be adsorbed on the top plate 30A with a high vacuum adsorption force compared to a case where holes for adsorbing the wafer W are formed only in the region not overlapping with the imaging device D in a plan view. That is, according to the present embodiment, the wafer W can be adsorbed appropriately.

[0149] Furthermore, since the exhaust mechanism 500 includes the buffer tank 503 , the exhaust flow passing through the connection hole 402 can be reduced, and the suction force of the wafer W can be prevented from becoming high only in the vicinity of the connection hole 402 .

[0150] In the above inspection process, light is irradiated from the irradiation unit 40. Specifically, all LEDs of the light source unit 42 are turned on, and light is emitted in a planar form from the surface of the light guide plate 41 facing the wafer W. The light emitted from the light guide plate 41 enters the wafer W via the base member 400 and the top plate 30A.

[0151] Unlike the present embodiment, when the diameter of the hole that non-linearly penetrates the top plate 30A is equal to the wavelength of the light irradiated from the irradiation unit 40, the light is refracted or reflected by the hole, and as a result, there are parts where the light incident on the wafer W through the top plate 30A strengthens each other and parts where the light weakens each other. In this case, there is a case where the light irradiated from the irradiation unit 40 cannot be incident on the desired part of the wafer W (specifically, the part corresponding to the imaging device D as the inspection object) with the desired intensity. In the present embodiment, the diameter (average pore size) of the hole that non-linearly penetrates the top plate 30A is 30 nm or less, which is sufficiently small relative to the wavelength of the light irradiated from the irradiation unit 40, so that the hole is substantially equivalent to not existing. Therefore, in the present embodiment, the light is not refracted or reflected by the hole. Therefore, according to the present embodiment, as long as there is no unevenness in the plane of the light incident on the top plate 30A, there will be no unevenness in the plane of the light incident on the wafer W through the top plate 30A. Therefore, in the present embodiment, the light irradiated from the irradiation unit 40 can be made incident on a desired portion (specifically, a portion corresponding to the imaging device D to be inspected) on the wafer W with a desired intensity.

[0152] (Another example of porous glass constituting the top plate 30A)

[0153] In the above example, the porous glass constituting the top plate 30 is a light-transmitting porous glass having an average pore size of 30 nm or less, but may also be a light-transmitting porous glass having an average pore size of 10 μm or more. A light-transmitting porous glass having an average pore size of 10 μm or more can be obtained in the same manner as a light-transmitting porous glass having an average pore size of 30 nm or less.

[0154] Even in the case of using a light-transmitting porous glass having an average pore diameter of 10 μm or more, holes are formed that penetrate the top plate 30A nonlinearly in the thickness direction in the region that does not overlap with the imaging device D when viewed from above in the state where the wafer W is placed and in the region that overlaps with the imaging device D. That is, holes are formed that penetrate the top plate 30A nonlinearly in the thickness direction on the entire surface of the top plate 30A. Therefore, in the case of this example, even if the exhaust flow rate from the space S between the top plate 30A and the base member 400 is low, the wafer W can be adsorbed on the top plate 30 with a high vacuum adsorption force.

[0155] In addition, in this example, the diameter (average pore size) of the hole that passes through the top plate 30A non-linearly is 10 μm or more, which is sufficiently large compared to the wavelength of the light irradiated from the irradiation unit 40 and incident on the top plate 30A. In addition, the above-mentioned hole has a variety of shapes. Therefore, even if the light incident on the top plate 30A is refracted or reflected by the above-mentioned hole, the light incident on the chip W through the top plate 30A will not regularly produce mutually reinforcing parts and mutually weakening parts. In this example, the light incident on the top plate 30A is diffused by the top plate 30A and incident on the chip W. Therefore, in this example, as long as there is no unevenness in the plane of the light incident on the top plate 30A, the light incident on the chip W through the top plate 30A will not produce unevenness in the plane. On the contrary, the light incident on the chip W through the top plate 30A will become uniform in the plane compared with the light incident on the top plate 30A. Therefore, also in this example, the light irradiated from the irradiation unit 40 can be made incident on a desired portion of the wafer W (specifically, a portion corresponding to the imaging device D to be inspected) with a desired intensity.

[0156] (Another example of top plate 30A)

[0157] exist Fig.12 In the example of , the sensor pattern SP is formed on the lower surface of the top plate 30A made of porous glass. Alternatively, the sensor pattern SP may be formed on the upper surface of the top plate 30A, that is, the mounting surface 30a, instead of the lower surface of the top plate 30A. Alternatively, the sensor pattern SP may be formed on the upper surface of the top plate 30A, that is, the mounting surface 30a, in addition to the lower surface of the top plate 30A.

[0158] Furthermore, the placement surface 30a of the top plate 30A may be coated with silicone. Specifically, the placement surface 30a of the top plate 30A may be coated with silicone so that the pores of the porous glass constituting the top plate 30A are not blocked.

[0159] The method for producing the top plate 30A coated with silicone so that the holes are not blocked is as follows, for example. That is, after the entire surface of the porous glass is coated with silicone, before the silicone is cured, gas is blown to the back side to blow away the portion of the silicone covering the entire surface of the porous glass that overlaps with the holes of the top plate 30A. In this way, the top plate 30A coated with silicone so that the holes are not blocked can be produced.

[0160] In this example, when the wafer W is held by suction on the top plate 30A through the holes of the porous glass constituting the top plate 30A, even if the back surface of the wafer W (specifically, the on-chip lens L) contacts the top plate 30A, it is the silicone coating that contacts. Therefore, it is possible to suppress the back surface of the wafer W (specifically, the on-chip lens L) from being damaged due to contact with the top plate 30A.

[0161] In addition, both the silicone coating layer and the sensor pattern SP may be formed on the placement surface 30 a of the top plate 30A.

[0162] The embodiments disclosed herein should be considered illustrative and not restrictive in all respects. The above embodiments may be omitted, replaced, or changed in various ways without departing from the appended claims and their subject matter. For example, the constituent elements of the above embodiments may be combined arbitrarily. From this arbitrary combination, the functions and effects of each constituent element in the combination can certainly be obtained, and other functions and effects that are obvious to those skilled in the art based on the description of this specification can be obtained.

[0163] In addition, the effects described in this specification are only illustrative or exemplary, and are not restrictive. That is, the technology of the present invention can obtain the above-mentioned effects, and can also obtain other effects that are obvious to those skilled in the art based on the description of this specification, or the technology of the present invention can obtain other effects that are obvious to those skilled in the art based on the description of this specification to replace the above-mentioned effects.

[0164] In addition, the technical solutions described below also belong to the technical scope of the present invention.

[0165] [Supplementary Item 1]

[0166] A testing device for testing a device under test, the testing device being characterized in that: the device under test is a back-illuminated imaging device formed on a body under test, and light can be incident on the imaging device from the back side of a surface of the imaging device on the opposite side to a side on which a wiring layer is provided, the testing device comprising a mounting table for supporting the body under test in a manner opposite to the back side of the imaging device, the mounting table comprising: a top plate made of a light-transmitting material, having a mounting surface for mounting the body under test; an irradiation unit arranged at a position opposite to the body under test with the top plate interposed therebetween, for irradiating light to the body under test mounted on the mounting surface; and a temperature regulating unit for regulating the temperature of the device under test of the body under test mounted on the mounting surface, the top plate being provided with a pattern of thickness made of a metal material that allows light to pass through formed on at least one of the mounting surface and the surface on the opposite side thereof.

[0167] [Supplementary Item 2]

[0168] The inspection device according to Note 1 is characterized in that it also includes: a measuring unit, which is used to perform measurements related to the resistance of the pattern; and a control unit, which can calculate the temperature of the pattern as the temperature of the inspection object device based on the measurement results of the measuring unit.

[0169] [Supplementary item 3]

[0170] The inspection device according to Supplementary note 2 is characterized in that the control unit can control the temperature adjustment unit based on the calculation result of the temperature of the pattern.

[0171] [Supplementary Item 4]

[0172] The inspection device according to Supplementary Item 1 is characterized in that the top plate is divided into a plurality of regions, and the patterns are respectively formed in the plurality of regions.

[0173] [Supplementary Note 5]

[0174] The inspection device according to Note 4 is characterized in that it also includes: a measuring unit, which is used to perform measurements related to the resistance of each of the patterns; and a control unit, which can calculate the temperature of the pattern as the temperature of the inspection object device based on the measurement results of the pattern in the area corresponding to the inspection object device in the multiple areas by the measuring unit.

[0175] [Supplementary Item 6]

[0176] The inspection device according to Supplementary note 5 is characterized in that the control unit can control the temperature adjustment unit based on the calculation result of the temperature of the pattern.

[0177] [Supplementary Note 7]

[0178] An inspection device according to any one of Notes 2, 3, 5, and 6, characterized in that: the pattern forms an area overlapping with the inspection object device when viewed from above, and is connected to the measuring part via other patterns formed in an area outside the area, and the other patterns are formed to be wider than the pattern width.

[0179] [Supplementary Item 8]

[0180] The inspection device according to any one of Supplementary Items 1 to 7, wherein the temperature adjustment section includes a heater for heating the inspection target device of the inspection target body placed on the placement surface, and the pattern also serves as the heater.

[0181] [Supplementary Item 9]

[0182] The inspection device according to any one of Notes 1 to 8 is characterized in that the irradiation unit includes: a light guide plate having an opposite surface opposite to the inspection object via the top plate; and a light source unit, which is arranged in an area on the outside of the side of the light guide plate and is used to emit light to the side end surface of the light guide plate, and the light guide plate is capable of reflecting light emitted from the light source unit and incident from the side end surface of the light guide plate toward the opposite surface, and emitting light from the opposite surface as planar light.

[0183] [Supplementary Item 10]

[0184] The inspection device according to Supplementary item 9 is characterized in that the temperature adjustment section is arranged at a position facing the inspection object via the top plate and the light guide plate.

[0185] [Supplementary Item 11]

[0186] The inspection device according to Supplementary Item 8 is characterized in that the irradiation unit includes a light source unit, which is arranged at a position opposite to the inspection object with the top plate interposed therebetween and is used to emit light toward the top plate.

[0187] [Supplementary Item 12]

[0188] The inspection device according to any one of the annexes 1 to 11 is characterized in that: the mounting table also has a base component made of a light-transmitting material, which is arranged between the top plate and the irradiation part, and is used to form a space for exhaust between the base component and the top plate, and the top plate is made of porous glass with an average pore diameter of less than 30nm or more than 10μm.

[0189] [Supplementary Item 13]

[0190] A loading platform, which is a loading platform of an inspection device for inspecting an inspection object device, characterized in that: the inspection object device is a back-illuminated imaging device formed on the inspection object body, and light can be incident on the imaging device from the back side of the surface of the imaging device on the opposite side of the side where a wiring layer is provided, and the loading platform is used to support the inspection object in a manner opposite to the back side of the imaging device, and the loading platform includes: a top plate made of a light-transmitting material, which has a loading surface for loading the inspection object body; an irradiation part, which is arranged at a position opposite to the inspection object body across the top plate, and is used to irradiate light to the inspection object body loaded on the loading surface; and a temperature adjustment part, which is used to adjust the temperature of the inspection object device of the inspection object body loaded on the loading surface, and the top plate is formed with a pattern of thickness made of metal material that allows light to pass through on the loading surface.

[0191] Description of Reference Numerals

[0192] 1 detector, 10, 10A, 10B stage, 30 top plate, 30a mounting surface, 40, 40A irradiation section, 51 heater, 101 voltmeter, D back-side illumination type imaging device, SP (SP1 to SP16) sensor pattern, W wafer.

Claims

1. An inspection device for inspecting an inspection target device, wherein: The inspection target device is a back-illuminated imaging device formed on the inspection target body, and light can enter the imaging device from the back side of the surface of the imaging device on the opposite side to the side where the wiring layer is provided. The inspection device includes a mounting table for supporting the inspection object so as to face the back surface of the imaging device. The mounting platform comprises: A top plate made of a light-transmitting material, having a placement surface for placing the inspection object; an irradiation unit disposed at a position opposite to the inspection object via the top plate, and configured to irradiate light to the inspection object placed on the placement surface; and a temperature adjustment unit for adjusting the temperature of the inspection target device of the inspection target body placed on the placement surface, The top plate has a pattern of a thickness allowing light to pass therethrough formed on at least one of the placement surface and the surface opposite thereto, which is made of a metal material.

2. The inspection device according to claim 1, characterized in that Also includes: a measuring section for performing measurements related to the resistance of the pattern; and Control Department, The control unit can calculate the temperature of the pattern as the temperature of the inspection target device based on the measurement result of the measurement unit.

3. The inspection device according to claim 2, characterized in that: The control unit may control the temperature adjustment unit based on a calculation result of the temperature of the pattern.

4. The inspection device according to claim 1, characterized in that: The top plate is divided into multiple areas. The patterns are formed in the plurality of regions, respectively.

5. The inspection device according to claim 4, characterized in that: Also includes: a measuring unit configured to perform measurement related to the resistance of each of the patterns; and Control Department, The control unit can calculate a temperature of the pattern as the temperature of the device under inspection based on a measurement result of the pattern of a region corresponding to the device under inspection among the plurality of regions by the measurement unit.

6. The inspection device according to claim 5, characterized in that: The control unit may control the temperature adjustment unit based on a calculation result of the temperature of the pattern.

7. The inspection device according to any one of claims 2, 3, 5 and 6, characterized in that: The pattern is formed in a region overlapping with the device under inspection in a plan view, and is connected to the measuring unit via another pattern formed in a region outside the region. The other pattern is formed wider than the pattern width.

8. The inspection device according to any one of claims 1 to 6, characterized in that: The temperature adjustment section includes a heater for heating the inspection target device of the inspection target body placed on the placement surface. The pattern also serves as the heater.

9. The inspection device according to any one of claims 1 to 6, characterized in that: The irradiation unit comprises: a light guide plate having an opposing surface opposed to the inspection object via the top plate; and a light source portion, which is arranged in the area outside the side of the light guide plate and is used to emit light to the side end surface of the light guide plate, The light guide plate can reflect light emitted from the light source unit and incident from a side end surface of the light guide plate toward the opposing surface, and emit the light from the opposing surface as planar light.

10. The inspection device according to claim 9, characterized in that: The temperature adjustment section is disposed at a position facing the inspection object via the top plate and the light guide plate.

11. The inspection device according to claim 8, characterized in that: The irradiation unit includes a light source unit that is disposed at a position facing the inspection object across the top plate and emits light toward the top plate.

12. The inspection device according to any one of claims 1 to 6, characterized in that: The mounting table further includes a base member made of a light-transmitting material, which is disposed between the top plate and the irradiation unit and is used to form a space for exhaust between the base member and the top plate. The top plate is made of porous glass having an average pore diameter of 30 nm or less or 10 μm or more.

13. A mounting table, which is a mounting table of an inspection device for inspecting an inspection target device, characterized in that: The inspection target device is a back-illuminated imaging device formed on the inspection target body, and light can enter the imaging device from the back side of the surface of the imaging device on the opposite side to the side where the wiring layer is provided. The mounting table is used to support the inspection object in a manner facing the back surface of the imaging device. The mounting platform comprises: A top plate made of a light-transmitting material, having a placement surface for placing the inspection object; an irradiation unit disposed at a position opposed to the inspection object via the top plate, and configured to irradiate light toward the inspection object placed on the placement surface; and a temperature adjustment unit for adjusting the temperature of the inspection target device of the inspection target body placed on the placement surface, The top plate has a pattern of a metal material having a thickness that allows light to pass therethrough formed on the placement surface.

Images