Electro-optical modulator, preparation method thereof and electro-optical device

Abstract

The invention discloses an electro-optical modulator, a preparation method thereof and an electro-optical element, and relates to the technical field of photoelectronics, the electro-optical modulator comprises a base layer, a first functional layer and a second functional layer; the first functional layer is arranged on one side of the base layer, and one side, deviating from the base layer, of the first functional layer is provided with at least one of a waveguide layer and a modulation layer; the second functional layer wraps the first functional layer, and an electrode structure is arranged on one side, deviating from the first functional layer, of the second functional layer, so that the electrode structure and the first functional layer are mutually isolated; according to the technical scheme, the modulation efficiency of the electro-optical modulator can be improved.

Description

Technical Field

[0001] The present invention relates to the field of optoelectronic technology, and in particular to an electro-optic modulator and a preparation method thereof, and an electro-optic device. Background Art

[0002] In the related art, an electro-optic modulator generally includes a waveguide layer and a modulation layer, and also includes a metal electrode, which is generally directly disposed on the waveguide layer or the modulation layer. In this arrangement, since the metal electrode directly contacts the waveguide layer or the modulation layer, it will cause significant light absorption, thereby reducing the modulation efficiency of the electro-optic modulator. Summary of the invention

[0003] The main purpose of the present invention is to provide an electro-optic modulator and a preparation method thereof, and an electro-optic device, aiming to improve the modulation efficiency of the electro-optic modulator.

[0004] To achieve the above object, the electro-optic modulator proposed in the present invention comprises:

[0005] Grassroots;

[0006] a first functional layer, wherein the first functional layer is disposed on one side of the base layer, and at least one of a waveguide layer and a modulation layer is disposed on a side of the first functional layer away from the base layer; and

[0007] A second functional layer is coated on the first functional layer, and an electrode structure is provided on a side of the second functional layer facing away from the first functional layer, so that the electrode structure and the first functional layer are isolated from each other.

[0008] In one embodiment, the second functional layer includes an isolation layer, the isolation layer is provided on a side of the first functional layer away from the base layer, and the side of the isolation layer away from the first functional layer has the electrode mounting position;

[0009] The electrode structure is arranged at the electrode installation position and is spaced apart from the first functional layer.

[0010] In one embodiment, the isolation layer is provided with a through hole to form the electrode mounting position;

[0011] The second functional layer further includes a buffer layer, the buffer layer includes a buffer structure, the buffer structure is embedded in the through hole, and the electrode structure is arranged on a side of the buffer structure away from the first functional layer.

[0012] In one embodiment, the first functional layer includes the waveguide layer and the modulation layer, the waveguide layer is arranged on one side of the base layer, the modulation layer is arranged on one side of the base layer and covers the waveguide layer, and the second functional layer is stacked and arranged on a side of the modulation layer away from the base layer;

[0013] And / or, the first functional layer includes the waveguide layer and the modulation layer, the modulation layer is arranged on one side of the base layer, the waveguide layer is arranged on a side of the modulation layer away from the waveguide layer, and the second functional layer is stacked and arranged on a side of the modulation layer away from the base layer and coated on the waveguide layer;

[0014] And / or, the first functional layer includes the waveguide layer, the modulation layer and the dielectric layer, the waveguide layer is arranged on one side of the base layer, the dielectric layer is arranged on one side of the base layer and coated on the waveguide layer, and the modulation layer is stacked on a side of the dielectric layer away from the base layer.

[0015] In one embodiment, the material of the first functional layer and / or the second functional layer is an aluminum nitride-based material, and the aluminum nitride-based material includes an aluminum nitride-doped auxiliary material, and the auxiliary material includes one or more of boron, carbon, silicon, phosphorus, sulfur, lithium, beryllium, magnesium, sodium, potassium, rubidium, cesium, gallium, germanium, indium, tin, bismuth, arsenic, selenium, antimony, tellurium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, zinc, strontium, yttrium, zirconium, niobium, molybdenum, palladium, cadmium, hafnium, tantalum, tungsten, iridium, cerium, praseodymium, neodymium, samarium, europium, gadolinium, ytterbium, erbium, lutetium, and thulium.

[0016] In one embodiment, the weight ratio of the auxiliary material to the aluminum nitride-based material is in the range of 0.01 wt % to 10 wt %.

[0017] In one embodiment, the material of the first functional layer includes at least one of silicon, silicon nitride, borosilicate, polymethyl methacrylate, polydimethylsiloxane, aluminum nitride, indium phosphide, gallium arsenide, gallium nitride, lithium niobate, lithium niobate, rubidium niobate, sodium niobate, lithium tantalate, barium strontium niobate, barium titanate, lead zirconate titanate, tungsten disulfide, and molybdenum disulfide.

[0018] The present invention further provides a method for preparing an electro-optic modulator as described in any one of the above, the steps of the preparation method comprising:

[0019] Providing a base layer, and forming a first functional layer and a second functional layer on the base layer;

[0020] The process of forming the first functional layer and / or the second functional layer includes a doping deposition process and an annealing process.

[0021] In one embodiment, the annealing process includes at least one of thermal annealing, plasma annealing, and laser annealing.

[0022] The present invention further provides an electro-optical device, comprising the electro-optical modulator described in any one of the above, wherein the electro-optical modulator comprises a substrate;

[0023] a first functional layer, wherein the first functional layer is disposed on one side of the base layer, and at least one of a waveguide layer and a modulation layer is disposed on a side of the first functional layer away from the base layer; and

[0024] A second functional layer is coated on the first functional layer, and an electrode structure is provided on a side of the second functional layer facing away from the first functional layer, so that the electrode structure and the first functional layer are isolated from each other.

[0025] The electro-optic modulator of the technical solution of the present invention comprises a base layer, a first functional layer and a second functional layer which are stacked in sequence from bottom to top, and an electrode structure is provided at one end of the second functional layer which is away from the first functional layer. In this way, the electrode structure and the waveguide layer and the modulation layer in the first functional layer can be isolated from each other by the second functional layer to avoid direct contact of the metal electrode with the waveguide layer or the modulation layer, thereby effectively reducing the light absorption of the metal electrode and the light loss of the first functional layer, so as to improve the modulation efficiency of the electro-optic modulator. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0027] Figure 1 A schematic structural diagram of a first embodiment of an electro-optic modulator provided by the present invention;

[0028] Figure 2 A schematic structural diagram of a second embodiment of an electro-optic modulator provided by the present invention;

[0029] Figure 3 A schematic structural diagram of a third embodiment of an electro-optic modulator provided by the present invention;

[0030] Figure 4 This is a schematic structural diagram of a fourth embodiment of the electro-optic modulator provided by the present invention.

[0031] Description of Figure Numbers:

[0032] 100, electro-optic modulator; 10, first functional layer; 11, waveguide layer; 12, modulation layer; 13, dielectric layer; 20, second functional layer; 21, isolation layer; 211, through hole; 22, buffer layer; 30, electrode structure; 40, base layer.

[0033] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0034] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0035] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0036] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of technical features indicated. Therefore, the features limited to "first" and "second" may explicitly or implicitly include at least one of the features. In addition, if "and / or" or "and / or" appears in the full text, its meaning includes three parallel solutions. Taking "A and / or B" as an example, it includes solution A, solution B, or solutions that satisfy both A and B. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0037] In the related art, the electro-optic modulator 100 generally includes a waveguide layer 11 and a modulation layer 12. The electro-optic modulator 100 also includes a metal electrode, which is generally directly disposed on the waveguide layer 11 or the modulation layer 12. In this arrangement, since the metal electrode directly contacts the waveguide layer 11 or the modulation layer 12, significant light absorption will be caused, thereby reducing the modulation efficiency of the electro-optic modulator 100.

[0038] The present invention provides an electro-optic modulator 100 .

[0039] See also Figures 1 to 4 In one embodiment of the present invention, the electro-optic modulator 100 comprises:

[0040] Base 40;

[0041] a first functional layer 10, wherein the first functional layer 10 is disposed on one side of the base layer 40, and at least one of a waveguide layer 11 and a modulation layer 12 is disposed on a side of the first functional layer 10 away from the base layer 40; and

[0042] The second functional layer 20 is coated on the first functional layer 10 , and an electrode structure 30 is disposed on a side of the second functional layer 20 facing away from the first functional layer 10 , so that the electrode structure 30 and the first functional layer 10 are isolated from each other.

[0043] The electro-optic modulator 100 of the technical solution of the present invention comprises a base layer 40, a first functional layer 10 and a second functional layer 20 which are stacked in sequence from bottom to top, and an electrode structure 30 is provided at one end of the second functional layer 20 away from the first functional layer 10. The base layer 40 comprises a stacked substrate and a cladding, and the first functional layer 10 is provided on the side of the cladding away from the substrate. The electrode structure 30 is a metal electrode, which can be specifically configured as a ground electrode and a signal electrode. The electrode structure 30 and the waveguide layer 11 and the modulation layer 12 in the first functional layer 10 are isolated from each other by the second functional layer 20 to avoid direct contact of the metal electrode with the waveguide layer 11 or the modulation layer 12, thereby effectively reducing the light absorption of the metal electrode and the light loss of the first functional layer 10, thereby increasing the modulation bandwidth, reducing the driving voltage and VπL, thereby obtaining a high-bandwidth, low-energy electro-optic modulator 100, and ensuring the modulation efficiency of the electro-optic modulator 100.

[0044] Further, the electro-optic modulator 100 proposed in the present invention is an electro-optic modulator based on aluminum nitride 100. Specifically, the material of the first functional layer 10 and / or the second functional layer 20 is an aluminum nitride-based material, and the aluminum nitride-based material includes an aluminum nitride-doped auxiliary material, and the auxiliary material includes one or more of boron, carbon, silicon, phosphorus, sulfur, lithium, beryllium, magnesium, sodium, potassium, rubidium, cesium, gallium, germanium, indium, tin, bismuth, arsenic, selenium, antimony, tellurium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, zinc, strontium, yttrium, zirconium, niobium, molybdenum, palladium, cadmium, hafnium, tantalum, tungsten, iridium, cerium, praseodymium, neodymium, samarium, europium, gadolinium, ytterbium, erbium, lutetium, and thulium.

[0045] Furthermore, in an embodiment of the present invention, the mass ratio of the auxiliary material to the aluminum nitride-based material is in the range of 0.01wt% to 10wt%, for example, 0.01wt%, 0.05wt%, 0.1wt%, 0.5wt%, 10wt% and any value between 0.01wt% and 10wt%.

[0046] It should be noted that the aluminum nitride-based material can be used as an optical waveguide material for transmitting optical signals in the electro-optic modulator 100, based on its wide optical band gap of 6.2 eV, wide transparent window from ultraviolet to mid-infrared wavelength range, and refractive index of about 2.1 at 1550 nm, and optical loss can be as low as 0.4 dB / cm. In addition, the aluminum nitride-based material has significant second-order nonlinear optical properties based on its non-centrosymmetric crystal structure, which is also the basic condition for it to be used as the modulation layer 12 of the electro-optic modulator 100 of the present invention.

[0047] In addition, by effectively performing doping deposition and annealing processes on aluminum nitride as the main material, a semiconductor thin film material with high mobility and low carrier concentration can be obtained. The semiconductor thin film material can be arranged between the electrode and the waveguide layer 11 to avoid contact between the metal electrode and the waveguide, reduce light loss, and be used as a buffer layer 22. It can also be arranged between the waveguide layer 11 and the isolation layer 21, and by regulating the carrier concentration inside the material, the dielectric constant near-zero effect is stimulated, and the optical signal transmitted in the waveguide layer 11 is modulated, and it is used as a modulation layer 12 for electro-optical modulation.

[0048] That is, aluminum nitride-based materials can be used in the waveguide layer 11, modulation layer 12 and buffer layer 22 of the electro-optic modulator 100 to improve the material mobility of the buffer layer 22, reduce optical loss, and reduce energy consumption, thereby helping to improve the performance of the electro-optic modulator 100.

[0049] See also Figures 1 to 4 In an embodiment of the present invention, the second functional layer 20 includes an isolation layer 21, and the isolation layer 21 is arranged on a side of the first functional layer 10 away from the base layer 40, and the side of the isolation layer 21 away from the first functional layer 10 has the electrode mounting position;

[0050] The electrode structure 30 is disposed at the electrode installation position and is spaced apart from the first functional layer 10 .

[0051] The side of the isolation layer 21 facing away from the first functional layer 10 may have a plurality of electrode mounting positions; accordingly, a plurality of electrode structures 30 may be provided, and the plurality of electrode structures 30 include signal electrodes and ground electrodes, and each electrode structure 30 is correspondingly provided at an electrode mounting position.

[0052] In some embodiments, the surface of the isolation layer 21 facing away from the first functional layer 10 is a plane, and the electrode structure 30 can be as follows: Figure 1 and Figure 4As shown, it is directly arranged on the plane, and a through hole 211 can also be arranged on the side of the isolation layer 21 away from the first functional layer 10 as in the embodiment described later, and at least part of the electrode structure 30 is accommodated in the through hole 211. The specific implementation can be arranged according to actual needs and is not limited here.

[0053] See also Figure 2 and Figure 3 In an embodiment of the present invention, the isolation layer 21 is provided with a through hole 211 to form the electrode mounting position;

[0054] The second functional layer 20 further includes a buffer layer 22 . The buffer layer 22 includes a buffer structure. The buffer structure is embedded in the through hole 211 . The electrode structure 30 is disposed on a side of the buffer structure away from the first functional layer 10 .

[0055] In some embodiments, the buffer structure may fill the entire through hole 211 and protrude toward the top side of the through hole 211. Alternatively, the buffer structure may only fill the bottom of the through hole 211, and at least a portion of the electrode structure 30 may be accommodated in the through hole 211, and the bottom of the electrode structure 30 may abut against the buffer structure in the through hole 211.

[0056] Furthermore, the material of the electrode structure 30 includes at least one of aluminum, silver, niobium, nickel, copper, gold, platinum, titanium, vanadium, chromium, tungsten, aluminum-copper alloy, nickel-chromium alloy, titanium nitride, tantalum nitride, transparent conductive oxide, graphene, and carbon nanotubes.

[0057] Furthermore, the material of the waveguide layer 11 and the modulation layer 12 includes at least one of silicon, silicon nitride, borosilicate, polymethyl methacrylate, polydimethylsiloxane, aluminum nitride, indium phosphide, gallium arsenide, gallium nitride, lithium niobate, lithium niobate, rubidium niobate, sodium niobate, lithium tantalate, barium strontium niobate, barium titanate, lead zirconate titanate, tungsten disulfide, and molybdenum disulfide.

[0058] The material of the cladding, the dielectric layer 13 and the isolation layer 21 includes at least one of silicon dioxide, silicon oxide, aluminum oxide, hafnium oxide, zirconium oxide, tantalum oxide, silicon nitride, aluminum nitride, yttrium titanium pentoxide, yttrium trioxide, ytterbium trioxide, benzocyclobutene, polyvinyl pyrrolidone, polymethyl methacrylate and poly(vinylidene fluoride-trifluoroethylene).

[0059] The present invention further provides a method for preparing an electro-optic modulator 100. The specific structure of the electro-optic modulator 100 is referred to the above embodiment. In the embodiment of the present invention, the steps of the preparation method include:

[0060] Providing a base layer 40, and forming a first functional layer 10 and a second functional layer 20 on the base layer 40;

[0061] The process of forming the first functional layer 10 and / or the second functional layer 20 includes a doping deposition process and an annealing process.

[0062] This setting can specifically control the grain size and arrangement in the film, reduce surface defects and impurities, thereby improving the crystallinity and conductivity of the film, reducing resistivity, and increasing carrier mobility by more than 150cm 2 / Vs.

[0063] In an embodiment of the present invention, the annealing process includes at least one of thermal annealing, plasma annealing, and laser annealing.

[0064] Among them, laser annealing can realize localized energy, so it can process specific areas without damaging the electro-optic modulator 100 substrate, thereby reducing the cost and loss in the preparation process. In addition, the preparation method of the electro-optic modulator 100 of the present invention is compatible with the CMOS process and does not increase the R&D and manufacturing costs.

[0065] The electro-optic modulator 100 proposed in the present invention has a waveguide loss lower than 0.5 dB / μm, a bandwidth exceeding 100 GHz, a bias voltage lower than 2.5 V, and an energy consumption lower than 10 fJ / bit. The modulated optical signal can be used for optical communication, optical sensing, and other optical applications.

[0066] The structure and preparation method of the electro-optic modulator 100 proposed by the present invention will be described below in a specific embodiment:

[0067] See also Figure 1 , Figure 1 It is a schematic diagram of the structure of the first embodiment of the electro-optic modulator 100 provided by the present invention. The aluminum nitride-based electro-optic modulator 100 includes a substrate, a cladding, a waveguide layer 11, and an isolation layer 21 from bottom to top. The top surface of the isolation layer 21 is provided with a ground electrode and a signal electrode side by side.

[0068] In this embodiment, the electro-optic modulator 100 can be specifically configured as a silicon substrate, a silicon dioxide cladding layer, a silicon dioxide isolation layer 21, a yttrium aluminum nitride waveguide layer 11, a gold-chromium alloy ground electrode, and a gold-chromium alloy signal electrode. The mass percentage of yttrium in the yttrium aluminum nitride material is 0.5wt%, and the yttrium aluminum nitride is prepared by radio frequency magnetron sputtering deposition and annealed at a temperature of 450°C for 2 hours in a vacuum environment with a pressure of 10-2Pa.

[0069] See also Figure 2 , Figure 2The figure shows a schematic diagram of the structure of the second embodiment of the electro-optic modulator 100 provided by the present invention. The aluminum nitride-based electro-optic modulator 100 includes, from bottom to top, a substrate, a cladding, a waveguide layer 11, a dielectric layer 13, a modulation layer 12, and an isolation layer 21. Three buffer structures of the buffer layer 22 are embedded in the isolation layer 21. The three buffer structures are arranged side by side, and the top surfaces of the three buffer structures are respectively provided with two ground electrodes and a signal electrode, and the signal electrode is located between the two ground electrodes.

[0070] In this embodiment, the electro-optic modulator 100 can be specifically configured as a sapphire substrate, an aluminum nitride cladding, a scandium aluminum nitride waveguide layer 11, a silicon dioxide dielectric layer 13, a strontium barium niobate modulation layer 12, a mixed isolation layer 21 of barium titanate and polymethyl methacrylate, an indium cerium oxide buffer layer 22, and a ground electrode and a signal electrode of a titanium niobium nitride alloy. The mass percentage of scandium in the scandium aluminum nitride material is 1.5wt%, and the scandium aluminum nitride is prepared by ion beam assisted deposition and annealed at a temperature of 1100°C for 3 hours in a nitrogen environment.

[0071] See also Figure 3 , Figure 3 The figure shows a schematic diagram of the structure of the third embodiment of the electro-optic modulator 100 provided by the present invention. The aluminum nitride-based electro-optic modulator 100 includes, from bottom to top, a substrate, a cladding, a modulation layer 12, a waveguide layer 11, and an isolation layer 21. Two buffer structures of the buffer layer 22 are embedded in the isolation layer 21. The two buffer structures are arranged on both sides of the waveguide structure and are arranged side by side with the waveguide structure. The top surfaces of the two buffer structures are provided with a ground electrode and a signal electrode, respectively.

[0072] In this embodiment, the electro-optic modulator 100 can be specifically configured as a silicon substrate, a silicon dioxide cladding, a barium titanate modulation layer 12, a silicon nitride waveguide layer 11, a silicon dioxide isolation layer 21, a silicon nitride aluminum buffer layer 22, a copper-aluminum alloy grounding electrode and a copper-aluminum alloy signal electrode. The mass percentage of germanium in the germanium aluminum nitride material is 0.25wt%, and the preparation of the germanium aluminum nitride adopts reactive magnetron sputtering deposition, and a KrF excimer laser is used in an air environment to irradiate the above-mentioned germanium aluminum nitride with 20,000 laser pulses per second.

[0073] See also Figure 4 , Figure 4 The figure shows a schematic structural diagram of a fourth embodiment of an electro-optic modulator 100 provided by the present invention. The aluminum nitride-based electro-optic modulator 100 includes, from bottom to top, a substrate, a cladding, a waveguide layer 11, and a modulation layer 12. A ground electrode is provided in a top surface area of ​​the modulation layer 12 away from the waveguide layer 11, and an isolation layer 21 and a signal electrode are provided in a top surface area adjacent to the waveguide layer 11.

[0074] In this embodiment, the electro-optic modulator 100 can be specifically configured as a silicon substrate, a silicon dioxide cladding, a lithium niobate waveguide layer 11, a silicon aluminum nitride modulation layer 12, a hafnium dioxide isolation layer 21, a copper aluminum alloy grounding electrode and a copper aluminum alloy signal electrode. Among them, the mass percentage of silicon in the silicon aluminum nitride material is 0.15wt%, and the silicon aluminum nitride is deposited by metal organic chemical vapor deposition, and then the plasma source generated by a mixture of argon and nitrogen is used to plasma anneal the silicon aluminum nitride, and the substrate is kept at a temperature of 350°C for 1 hour.

[0075] In this way, the aluminum silicon nitride has a diameter greater than 300 cm 2 / Vs mobility. By applying an external electric field on the aluminum silicon nitride film, the concentration and distribution of carriers in the film can be changed, thereby changing the frequency and oscillation intensity of the plasma. The above process will cause a controllable change in the refractive index of the film, thereby realizing the modulation of the optical signal.

[0076] Of course, the technical solution of the present invention is not limited to this. In another feasible embodiment, the electro-optic modulator 100 can be specifically configured as a silicon substrate, a silicon dioxide cladding, an aluminum nitride waveguide layer 11, a zirconium aluminum nitride modulation layer 12, a hafnium dioxide isolation layer 21, a gold-chromium alloy ground electrode and a gold-chromium alloy signal electrode. Among them, the mass percentage of zirconium in the silicon aluminum nitride material is 10wt%, and the zirconium aluminum nitride is deposited by radio frequency magnetron sputtering in a vacuum environment with a pressure of 0.1Pa. At this time, the substrate is kept at a temperature of 350°C for 1 hour. Then, the above-mentioned zirconium aluminum nitride film can be irradiated and annealed in an air environment using a KrF excimer laser at 35,000 laser pulses per second.

[0077] The present invention also proposes an electro-optical element, which includes an electro-optical modulator 100. The specific structure of the electro-optical modulator 100 refers to the above-mentioned embodiment. Since the present electro-optical element adopts all the technical solutions of all the above-mentioned embodiments, it has at least all the beneficial effects brought by the technical solutions of the above-mentioned embodiments, which will not be described one by one here.

[0078] The above description is only an exemplary embodiment of the present invention, and does not limit the patent scope of the present invention. All equivalent structural changes made by using the contents of the present invention specification and drawings under the technical concept of the present invention, or directly / indirectly applied in other related technical fields are included in the patent protection scope of the present invention.

Claims

1. An electro-optic modulator, characterized in that: include: Grassroots; A first functional layer, wherein the first functional layer is disposed on one side of the base layer, and at least one of a waveguide layer and a modulation layer is disposed on a side of the first functional layer away from the base layer; as well as A second functional layer is coated on the first functional layer, and an electrode structure is provided on a side of the second functional layer facing away from the first functional layer, so that the electrode structure and the first functional layer are isolated from each other.

2. The electro-optic modulator according to claim 1, characterized in that The second functional layer comprises an isolation layer, the isolation layer is arranged on a side of the first functional layer away from the base layer, and the side of the isolation layer away from the first functional layer has the electrode mounting position; The electrode structure is arranged at the electrode installation position and is spaced apart from the first functional layer.

3. The electro-optic modulator according to claim 2, characterized in that The isolation layer is provided with a through hole to form the electrode mounting position; The second functional layer further includes a buffer layer, the buffer layer includes a buffer structure, the buffer structure is embedded in the through hole, and the electrode structure is arranged on a side of the buffer structure away from the first functional layer.

4. The electro-optic modulator according to claim 1, wherein: The first functional layer includes the waveguide layer and the modulation layer, the waveguide layer is arranged on one side of the base layer, the modulation layer is arranged on one side of the base layer and covers the waveguide layer, and the second functional layer is stacked and arranged on a side of the modulation layer away from the base layer; And / or, the first functional layer includes the waveguide layer and the modulation layer, the modulation layer is arranged on one side of the base layer, the waveguide layer is arranged on a side of the modulation layer away from the waveguide layer, and the second functional layer is stacked and arranged on a side of the modulation layer away from the base layer and coated on the waveguide layer; And / or, the first functional layer includes the waveguide layer, the modulation layer and the dielectric layer, the waveguide layer is arranged on one side of the base layer, the dielectric layer is arranged on one side of the base layer and coated on the waveguide layer, and the modulation layer is stacked on a side of the dielectric layer away from the base layer.

5. The electro-optic modulator according to any one of claims 1 to 4, characterized in that: The material of the first functional layer and / or the second functional layer is an aluminum nitride-based material, and the aluminum nitride-based material includes an aluminum nitride-doped auxiliary material, and the auxiliary material includes one or more of boron, carbon, silicon, phosphorus, sulfur, lithium, beryllium, magnesium, sodium, potassium, rubidium, cesium, gallium, germanium, indium, tin, bismuth, arsenic, selenium, antimony, tellurium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, zinc, strontium, yttrium, zirconium, niobium, molybdenum, palladium, cadmium, hafnium, tantalum, tungsten, iridium, cerium, praseodymium, neodymium, samarium, europium, gadolinium, ytterbium, erbium, lutetium, and thulium.

6. The electro-optic modulator according to claim 5, characterized in that The mass ratio of the auxiliary material to the aluminum nitride-based material is in the range of 0.01 wt % to 10 wt %.

7. The electro-optic modulator according to any one of claims 1 to 4, characterized in that: The material of the first functional layer includes at least one of silicon, silicon nitride, borosilicate, polymethyl methacrylate, polydimethylsiloxane, aluminum nitride, indium phosphide, gallium arsenide, gallium nitride, lithium niobate, lithium niobate, rubidium niobate, sodium niobate, lithium tantalate, barium strontium niobate, barium titanate, lead zirconate titanate, tungsten disulfide, and molybdenum disulfide.

8. A method for preparing an electro-optic modulator according to any one of claims 1 to 7, characterized in that: The steps of the preparation method include: Providing a base layer, and forming a first functional layer and a second functional layer on the base layer; The process of forming the first functional layer and / or the second functional layer includes a doping deposition process and an annealing process.

9. The electro-optic modulator according to claim 8, characterized in that The annealing process includes at least one of thermal annealing, plasma annealing, and laser annealing.

10. An electro-optical device, characterized in that: Comprising an electro-optical modulator as claimed in any one of claims 1 to 7.

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