Adsorption device and wafer processing method

Abstract

The present invention discloses an adsorption device and a wafer processing method, which belong to the field of wafer processing technology. The adsorption device includes an adsorption body; a channel mechanism, including a first channel component and a second channel component arranged around the first channel component; a filling mechanism, including a first filling piece filled in part of the second channel component, so that no fluid passes through part of the second channel component; the second channel component filled with the first filling piece forms a first filling area, and the remaining second channel component and the first channel component form an adsorption area, and the wafer orthographic projection overlaps with the first filling area; when vacuuming, the first filling piece makes the flow rate of the first airflow flowing through the adsorption area and the wafer greater than the flow rate of the second airflow flowing through the first filling area and the wafer. Through the above method, it can be ensured that the adsorption body can still maintain adsorption with the wafer for a period of time after the vacuum is removed, thereby avoiding problems such as slipping and bumping in subsequent processes.

Description

Technical Field

[0001] The invention belongs to the technical field of wafer processing, and in particular relates to an adsorption device and a wafer processing method. Background Art

[0002] Wafers are usually bonded and debonded during production and processing. Bonding is a wafer-level thinning and packaging technology used in the manufacture of microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics and optoelectronics to ensure a mechanically stable and sealed package.

[0003] For the thinned wafer, its physical structure and stability are greatly reduced due to the necessary grinding of the back side, making it easy to be damaged during the process of thin wafer processing and making a single microchip. Therefore, before thinning the wafer, a carrier wafer needs to be temporarily and firmly connected to the wafer to be processed. The above-mentioned carrier wafer can be a silicon wafer, a glass wafer or a sapphire wafer, etc. This process is called bonding, which helps to protect the wafer from damage in subsequent processing. That is, the wafer forms a bonding sheet after the bonding process, and the bonding sheet includes a glass sheet (as mentioned above, it can also be a silicon wafer or a sapphire wafer, etc.), a silicon wafer and a glue layer connecting the two. The debonding process is the opposite of the bonding process, which separates the glass sheet (or other carrier) and the silicon wafer (or other device wafer) by cutting off the glue layer connecting the bonding sheet.

[0004] The above bonding and debonding are also called temporary bonding and debonding. It is necessary to clean the residual adhesive layer on the surface of the wafer after temporary debonding, which requires a wafer cleaning module suitable for spraying cleaning liquid on the adhesive layer to clean the residual adhesive left on the surface of the wafer. Summary of the invention

[0005] Therefore, the technical problem to be solved by the present invention is how to prevent the cleaning liquid and bonding glue residue from seeping into the suction cup when the wafer is cleaned, or how to control the flow path of the fluid in the adsorption body to ensure that the adsorption body can maintain adsorption with the wafer for a period of time after debonding, so as to facilitate transfer and avoid problems in subsequent processes.

[0006] In order to solve the above technical problems, the present invention provides an adsorption device, comprising:

[0007] The adsorption body is suitable for placing the wafer and is vacuumed under the action of the vacuum generator to adsorb the wafer;

[0008] A channel mechanism, suitable for allowing fluid to flow through, and formed on the adsorption body; the channel mechanism comprises a first channel component and a second channel component, and the second channel component is arranged around the first channel component;

[0009] A filling mechanism, comprising a first filling member filled in a part of the second channel component, so that no fluid passes through the part of the second channel component; the second channel component filled with the first filling member forms a first filling area, and the remaining part of the second channel component and the first channel component form an adsorption area, and the orthographic projection of the wafer partially overlaps with the first filling area;

[0010] When the adsorption body is evacuated, the first filling member makes the flow rate of the first airflow flowing through the adsorption area and the wafer greater than the flow rate of the second airflow flowing through the first filling area and the wafer.

[0011] Optionally, in the above-mentioned adsorption device, the flow path of the first airflow includes a first flow section located between the adsorption body and the wafer, and the first flow section and the upper surface of the adsorption body are vertically or nearly vertically arranged.

[0012] Optionally, in the above-mentioned adsorption device, the flow path of the second airflow includes a second flow section from the outside to the gap between the adsorption body and the wafer, and a third flow section located between the adsorption body and the wafer;

[0013] An included angle between the second flow section and the upper surface of the adsorption body is less than 90°, and an included angle between the third flow section and the upper surface of the adsorption body is less than 90°.

[0014] Optionally, in the above-mentioned adsorption device, after the wafer is attracted to the adsorption device, the pressure between the first side surface of the wafer close to the adsorption body and the adsorption body is lower than the pressure of the wafer away from the adsorption body.

[0015] Optionally, in the above-mentioned adsorption device, the outer edge of the first filling area is located inside the outer edge of the adsorption body, or the outer edge of the first filling area is flush with the outer edge of the adsorption body.

[0016] Optionally, in the above-mentioned adsorption device, the filling mechanism further comprises a second filling member filled in a portion of the first channel component, and the portion of the first channel filled with the second filling member divides the adsorption area into a suction area and a second filling area;

[0017] When the adsorption body is evacuated, the second filling member makes the flow rate of the third airflow flowing through the suction area and the wafer greater than the flow rate of the fourth airflow flowing through the second filling area and the wafer.

[0018] The present invention also provides a wafer processing method, using the adsorption device as described above, comprising the following steps:

[0019] Placing a wafer on the adsorption body, with a gap between the wafer and the adsorption body;

[0020] operating a vacuum generator to form a negative pressure in the adsorption body to eliminate the gap between the wafer and the adsorption body;

[0021] Turning off the vacuum generator, causing the fluid in the adsorption body to flow back, so that the adsorption body and the wafer are separated;

[0022] Among them, there is a first airflow between the wafer and the adsorption area of ​​the adsorption body, and a second airflow between the wafer and the filling area of ​​the adsorption body. The second airflow flows from the outside through the gap and the adsorption area to the outside, and the first airflow flows through the adsorption area to the outside or from the outside to the adsorption area, so that the flow rate of the first airflow is greater than the flow rate of the second airflow, thereby making the adsorption speed between the adsorption area and the wafer greater than the adsorption speed between the filling area and the wafer, or making the detachment speed between the adsorption area and the wafer greater than the detachment speed between the filling area and the wafer.

[0023] The technical solution provided by the present invention has the following advantages: by providing a filling mechanism, the filling mechanism includes a first filling piece, and the first filling piece is filled in a second channel component that is partially provided in an adsorption body, so that a portion of the second channel component filled with the first filling piece forms a first filling area, and the first filling area prevents part or all of the fluid from passing through; the remaining second channel component and the first channel component form an adsorption area, and the adsorption area adsorbs the wafer on the adsorption body; the orthographic projection of the wafer on the adsorption body partially overlaps with the first filling area, thereby preventing the fluid from entering the adsorption body through the first filling area, affecting the subsequent process of the wafer and the final product effect;

[0024] Moreover, when the adsorption body is evacuated, due to the presence of the first filling piece, the flow rate of the first airflow flowing through the adsorption area and the wafer is greater than the flow rate of the second airflow flowing through the first filling area and the wafer. Therefore, when the vacuum is removed, the fluid flows back from the outside through the adsorption area to between the adsorption body and the wafer to separate the wafer and the adsorption body. At the same time, the flow rate of the first airflow flowing through the adsorption area and the wafer is still greater than the flow rate of the second airflow flowing through the first filling area and the wafer, so that the first filling area and the wafer remain adsorbed for a period of time, thereby facilitating the transfer of the wafer in subsequent processes, which is more convenient and quick. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0026] Figure 1 It is a structural schematic diagram of the adsorption body of the present invention without being filled with a filling mechanism;

[0027] Figure 2 for Figure 1 Schematic cross-sectional view of ;

[0028] Figure 3 It is a structural schematic diagram of an adsorption body in which the second channel assembly of the present invention is completely filled with the first filling member;

[0029] Figure 4 for Figure 3 Schematic cross-sectional view of ;

[0030] Figure 5 for Figure 3 Schematic diagram of the wafer and the adsorption body not being attracted when vacuuming;

[0031] Figure 6 for Figure 3 Schematic diagram of the state in which the wafer and the adsorption body are about to be completely attracted when evacuating the vacuum;

[0032] Figure 7 It is a structural schematic diagram of an adsorption body in which a second channel assembly of the present invention is partially filled with a first filling member;

[0033] Figure 8 It is a structural schematic diagram of an adsorption body of the present invention in which a second channel component is partially filled with a first filler, and a first channel component is partially filled with a second filler;

[0034] Fig. 9 for Figure 7 Schematic cross-sectional view of ;

[0035] Fig.10 for Figure 7 Schematic diagram of the wafer and the adsorption body not being attracted when vacuuming;

[0036] Fig.11 for Figure 7 Schematic diagram of the state in which the wafer and the adsorption body are about to be completely attracted when evacuating the vacuum;

[0037] Fig.12 It is a schematic diagram of the filling depth of the adsorption body when the second channel assembly of the present invention is completely filled with the first filling member;

[0038] Fig.13 It is a schematic diagram of the state in which the wafer and the adsorption body of the present invention are attracted to each other when the vacuum is evacuated;

[0039] Fig.14 It is a schematic diagram of a state in which the wafer and the adsorption body of the present invention switch from self-attraction to separation under the recoil effect of airflow when the wafer and the adsorption body are evacuated.

[0040] Description of reference numerals:

[0041] 1-wafer; 2-adsorption body; 21-first filling area; 22-adsorption area; A-first channel component; B-second channel component. DETAILED DESCRIPTION

[0042] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. Preferred embodiments of the present invention are provided in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0043] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only.

[0044] In this document, spatially related terms such as "upper" and "lower" are defined with reference to the accompanying drawings. Therefore, it will be understood that "upper" and "lower" are used interchangeably. It will be understood that when a layer is referred to as being "on" another layer, it can be directly formed on the other layer, or intervening layers may also be present. Therefore, it will be understood that when a layer is referred to as being "directly on" another layer, there are no intervening layers interposed therebetween.

[0045] In the accompanying drawings, the sizes of layers and regions may be exaggerated for clarity. It is understood that when a layer or element is referred to as being "on" another layer or substrate, the layer or element may be directly on the other layer or substrate, or there may be intervening layers. In addition, it is also understood that when a layer is referred to as being "between" two layers, the layer may be the only layer between the two layers, or there may be one or more intervening layers. In addition, the same reference numerals always represent the same elements.

[0046] Hereinafter, although terms such as "first", "second", etc. may be used to describe various components, these components are not necessarily limited to the above terms. The above terms are only used to distinguish one component from another component. It will also be understood that expressions used in the singular form include plural expressions, unless the expression in the singular form has a significantly different meaning in the context. In addition, in the following embodiments, it will also be understood that the terms "comprising" and / or "having" used herein illustrate the presence of the stated features or components, but do not exclude the presence or addition of one or more other features or components.

[0047] In the following embodiments, when a layer, region, or element is "connected", it can be interpreted that the layer, region, or element is not only directly connected but also connected through other constituent elements placed therebetween. For example, when a layer, region, element, etc. is described as being connected or electrically connected, the layer, region, element, etc. can be connected or electrically connected not only directly or directly, but also through another layer, region, element, etc. placed therebetween.

[0048] As used in the application documents, the term "and / or" includes any and all combinations of one or more of the related listed items. When a statement such as "at least one (one) of..." is placed after a list of elements, it modifies the entire list of elements, rather than modifying the individual elements in the list.

[0049] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art to which the present invention pertains. The terms used herein in the specification of the application are only for the purpose of describing specific embodiments and are not intended to limit the present application. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0050] It should also be understood that the terms “include / comprises” or “having” and the like specify the presence of stated features, wholes, steps, operations, components, parts or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts or combinations thereof.

[0051] During the production and handling of wafers 1, bonding and debonding processes are usually used. Bonding is a wafer-level thinning and packaging technology used in the manufacture of microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics and optoelectronics to ensure a mechanically stable and sealed package.

[0052] For the thinned wafer 1, its physical structure and stability are greatly reduced due to the necessary grinding of the back side, making it vulnerable to damage during the process of thin wafer 1 processing and making a single microchip. Therefore, before thinning the wafer 1, a carrier wafer needs to be temporarily and firmly connected to the wafer 1 to be processed. The above-mentioned carrier wafer can be a silicon wafer, a glass wafer or a sapphire wafer, etc. This process is called bonding, which helps to protect the wafer 1 from damage in subsequent processing. That is, the wafer 1 forms a bonding wafer after the bonding process, and the bonding wafer includes a glass wafer (as mentioned above, it can also be a silicon wafer or a sapphire wafer, etc.), a silicon wafer and a glue layer connecting the two. The debonding process is the opposite of the bonding process, which separates the glass wafer (or other carrier wafer) and the silicon wafer (or other device wafer) by cutting off the glue layer connected in the bonding wafer.

[0053] The above bonding and debonding are also called temporary bonding and debonding. It is necessary to clean the residual adhesive layer on the surface of the wafer 1 after temporary debonding, which requires providing a wafer 1 cleaning module, which is suitable for spraying cleaning liquid on the adhesive layer to clean the residual adhesive left on the surface of the wafer 1.

[0054] The wafer 1 cleaning module includes a spray mechanism, an adsorption device, a carrier, a driving mechanism and a vacuum generator. The driving mechanism is connected to the carrier and is suitable for driving the carrier to rotate. In this embodiment, the driving mechanism is a driving motor. In other embodiments, the driving mechanism may also be a linear driving mechanism such as a driving cylinder or an electric cylinder, which is connected to the carrier through a transmission mechanism to drive the carrier to rotate. No specific limitation is made here, and it depends on the actual situation. The transmission mechanism may be a lead screw, etc.

[0055] The adsorption device is placed on the carrier platform and connected to the carrier platform. The vacuum generator is connected to the carrier platform, so that a vacuum negative pressure can be formed in the adsorption device to adsorb the wafer 1 placed on the surface of the adsorption device away from the carrier platform to the adsorption device, so as to ensure that the wafer 1 can continue the subsequent process and transfer work.

[0056] In addition, due to the environmental and condition requirements for the production of the adsorption device and the wafer 1, the flatness of the adsorption device is below 10um. When the adsorption device and the wafer 1 are bonded, under the action of negative vacuum, the air between the adsorption device and the wafer 1 is mostly extracted, and the wafer 1 is bonded to the adsorption device under the action of the air pressure on its upper side, so that the adsorption bonding between the adsorption device and the wafer 1 is similar to the adsorption bonding between two smooth surfaces, thereby ensuring the stability of the bonding between the adsorption device and the wafer 1.

[0057] The spray mechanism is arranged on one side of the carrier, and is suitable for spraying a cleaning liquid onto the wafer 1 adsorbed on the adsorption device. The cleaning liquid is a conventional cleaning liquid for the wafer 1, and the present application does not make corresponding improvements to the cleaning liquid. In addition, the spray mechanism includes a spray arm and a delivery pipe connecting the spray arm and the external cleaning liquid, which is also a conventional structure and will not be described in detail here.

[0058] See also Figure 1 and Figure 2 , the adsorption device in the present application includes an adsorption body 2 and a channel mechanism, wherein the adsorption body 2 is for placing the wafer 1, and is evacuated under the action of the vacuum generator to adsorb the wafer 1, and the channel mechanism is for the fluid to flow through, and is formed on the adsorption body 2. Among them, the channel mechanism is set throughout the adsorption body 2, and the channel mechanism includes a number of micron-level channels, and the extension direction of the several micron-level channels is mainly based on the height direction of the adsorption device, but the regularity of the extension direction of the several micron-level channels is not limited. That is, the extension direction of several micron-level channels can be vertically downward (i.e., cylindrical), or, the extension direction of several micron-level channels can be curved downward (in the shape of arcs, waves, etc.), etc., which is not specifically limited here, and depends on the actual situation. In addition, the extension directions of several micron-level channels can be different, or the same setting can be made according to the actual situation.

[0059] By providing micron-scale channels, when the thin wafer 1 is adsorbed on the adsorption device, the pressure applied by each channel on the thin wafer 1 is small, which will not cause the thin wafer 1 to break, while ensuring that the thin wafer 1 is firmly adsorbed.

[0060] As can be seen from the above, a number of micron-scale channels are provided on the adsorption body 2. Since the micron-scale channels on the adsorption device are connected, when the wafer 1 after debonding is cleaned, the cleaning liquid and the residual bonding glue will penetrate into the interior of the adsorption body 2 through the micron-scale channels not covered by the wafer 1. When the vacuum is removed, there is no negative pressure inside the adsorption device, and the air is backwashed, and the cleaning liquid and the residual bonding glue will flow back to between the adsorption body 2 and the wafer 1 with the airflow, causing the adsorption body 2 and the back of the wafer 1 to be contaminated by the cleaning liquid and the residual bonding glue.

[0061] In order to prevent the above problems from occurring, the adsorption device in this embodiment further includes a filling mechanism. And the above-mentioned plurality of micrometer-level channels include a first channel component A and a second channel component B, that is, the first channel component A and the second channel component B have the same structure (please refer to Figure 1 and Figure 2 , Figure 1 and Figure 2The dividing line between the first channel component A and the second channel component B does not exist in the actual product and is only illustrated in the figure for distinction). In addition, the second channel component B is arranged around the first channel component A, so that the first channel component A is arranged close to the center of the adsorption body 2, and the second channel component B is arranged close to the outer edge of the center of the adsorption body 2.

[0062] Please combine Figures 3 to 12 The filling mechanism includes a first filling member filled in at least part of the second channel component B, so that the second channel component B filled with the first filling member forms a first filling area 21, and the remaining part of the second channel component B forms an adsorption area 22. The adsorption area 22 is used to adsorb the wafer 1 on the adsorption body 2, and the first filling area 21 prevents the cleaning liquid and the residual bonding glue from flowing into the space between the wafer 1 and the adsorption body 2. In addition, the positive projection of the wafer 1 on the adsorption body 2 overlaps with the first filling area 21. When the wafer 1 is adsorbed on the adsorption body 2, the first filling area 21 exists outside the edge of the wafer 1, and the fluid cannot flow into the adsorption body 2 through the first filling area 21, so as to prevent the cleaning liquid and the bonding glue from flowing back to the space between the wafer 1 and the adsorption body 2 when the vacuum is removed to contaminate the wafer 1, thereby improving the cleaning efficiency of the wafer 1.

[0063] When the second channel component B is completely filled with the first filling member, its shape is as follows: Figure 3 and Figure 4 When the second channel component B is partially filled with the first filler, its shape is as shown Figure 7 and Figure 8 As shown, this application does not specifically limit the filling quantity of the second channel component B, which is determined according to actual conditions. Figure 4 and Fig.12 The filling depth of the first filling piece in the second channel assembly B can also be set according to actual conditions, and this application does not make any specific limitations.

[0064] Please combine Figure 5 and Figure 6 Moreover, by providing the first filling area 21, when the adsorption body 2 is evacuated, the portion of the wafer 1 located in the adsorption area 22 can be quickly attached to the adsorption body 2, while the portion of the wafer 1 located in the first filling area 21 needs to rely on the airflow of the adsorption area 22 outside the first filling area 21 to form a vacuum, so that the airflow velocity of the first filling area 21 is relatively low, thereby making the bonding speed of the portion of the wafer 1 located in the adsorption area 22 and the adsorption body 2 faster than the bonding speed of the portion of the wafer 1 located in the first filling area 21 and the adsorption body 2. Please combine Fig.13 and Fig.14On the contrary, when the vacuum is removed, the part of the wafer 1 located in the adsorption area 22 can be quickly separated from the adsorption body 2 under the recoil of the airflow, while the part of the wafer 1 located in the first filling area 21 needs to be pushed away by the slow backflow of the airflow when the external atmospheric pressure is greater than the internal pressure, and then it takes a certain amount of time, so that the wafer 1 can still maintain adsorption with the adsorption body 2 for a period of time after the vacuum is removed.

[0065] Specifically, the airflow between the adsorption area 22 and the wafer 1 is defined as the first airflow (pointed by the arrow a in the figure), and the airflow between the first filling area 21 and the wafer 1 is defined as the second airflow (pointed by the arrow b in the figure), then the flow rate of the first airflow is greater than the flow rate of the first airflow. The above-mentioned first airflow and second airflow are not limited in direction, that is, when vacuuming, the airflow between the adsorption area 22 and the wafer 1 is the first airflow, and when vacuuming, the airflow between the adsorption area 22 and the wafer 1 is still the first airflow; similarly, when vacuuming, the airflow between the first filling area 21 and the wafer 1 is the second airflow, and when vacuuming, the airflow between the first filling area 21 and the wafer 1 is still the second airflow.

[0066] See also Figure 5 and Figure 6 , Fig.10 and Fig.11 , the flow path of the first airflow includes a first flow section located between the adsorption body 2 and the wafer 1, and the angle between the first flow section and the upper surface of the adsorption body 2 is greater than 90° and less than or equal to 80°. That is, the first flow section and the adsorption body 2 are vertically or vertically arranged. That is, the first airflow is in a downward natural flow state (as can be seen from the above, the adsorption body 2 is placed on the carrier, and the two are stacked up and down), and it is not blocked during the flow process, because it will not affect the flow rate of the first airflow.

[0067] The flow path of the second airflow includes a second flow section from the outside to the gap between the adsorption body 2 and the wafer 1, and a third flow section located between the adsorption body 2 and the wafer 1. Since part of the first filling area 21 is exposed to the outside of the wafer 1, the second airflow will enter the gap between the adsorption body 2 and the wafer 1 from the outside during vacuuming and gradually form an adsorption bonding state. Among them, due to the existence of the first filling member, the second airflow cannot flow downward naturally, and needs to flow to the outer edge of the adsorption body 2 through the adsorption area 22 located on one side of the first filling area 21. Therefore, the angle between the second flow section and the upper surface of the adsorption body 2 is less than 90°, and the angle between the third flow section and the upper surface of the adsorption body 2 is less than 90°. Such a flow path will inevitably affect the flow rate of the second airflow, so the flow rate of the second airflow is less than the flow rate of the first airflow, so that the bonding speed of the wafer 1 and the adsorption body 2 at the first filling area 21 is less than the bonding speed of the wafer 1 and the adsorption body 2 at the adsorption area 22.

[0068] And from the above, it can be known that the adsorption and bonding of the adsorption body 2 and the wafer 1 is similar to the adsorption and bonding of two smooth surfaces, so that the effect of the adsorption and bonding of the adsorption body 2 and the wafer 1 is stable, and the pressure between the first side surface of the wafer 1 close to the adsorption body 2 and the adsorption body 2 is less than the pressure of the wafer 1 away from the adsorption body 2. When the vacuum is removed, since the first airflow and the second airflow still return in the original direction, the separation speed of the wafer 1 and the adsorption body 2 at the first filling area 21 is less than the separation speed of the wafer 1 and the adsorption body 2 in the adsorption area 22, so that after the vacuum is removed, the wafer 1 can still be adsorbed to the adsorption body 2 for a period of time.

[0069] The first filler has a first state and a second state, and the hardness of the first state is less than that of the second state. In this embodiment, the first state is a flowing state, and the second state is a solid state. When the first filler is in the first state, the first filler can flow along the extension direction of the micropores. At this time, the first filler can be filled in the second channel component B; when the first filler is in the second state, the first filler is fixed in the second channel component B, and in the height direction of the adsorption body 2, the top of the first filler is flush with or tends to be flush with the upper surface of the adsorption body 2. That is, when the first filler is in the first state, it is a manufacturing state when filling in the second channel component B; when the first filler is in the second state, the first filler has been formed in the second channel component B. In addition, during the use of the adsorption body 2, the state of the first filler filled in the second channel component B will not change, and it will continue to remain in a solid state, that is, the second state.

[0070] The tendency to be flush here means that the top of the first filling piece is flush with the upper surface of the adsorption body 2 in visual effect, but there is a gap between the top of the first filling piece and the upper surface of the adsorption body 2 in a subtle environment. In order to ensure that the aforementioned thin wafer 1 will not be damaged and the corresponding process is carried out, even if there is a gap between the top of the first filling piece and the upper surface of the adsorption body 2 in a subtle environment, the top of the first filling piece should be on the lower side of the upper surface of the adsorption body 2, and the first filling piece only needs to achieve the function of blocking.

[0071] It is worth noting that even though the first state is a flowing state, the flowing state is a viscous flowable state rather than a water flow state, so that the first filling piece can flow in the micropores and will not quickly flow out of the micropores. At the same time, the flowing state also provides time for the first filling piece to be converted from the first state to the second state, so that when the first filling piece is converted from the first state to the second state, it still remains in the micropores, thereby blocking the micropores.

[0072] The conversion of the first state and the second state of the first filling member can be through temperature, that is, the change of the external temperature causes the first filling member to convert between the first state and the second state. The conversion of the first state and the second state of the first filling member can also be through pressure, that is, the external pressure causes the first filling member to convert between the first state and the second state. As can be seen from the above, the extension direction of the micropores in the present application is irregular, so the conversion of the first state and the second state of the first filling member is preferably through temperature.

[0073] And the first state is liquid, and the second state is solid, then the temperature rises so that the first filling member is converted from the second state to the first state, and the temperature decreases so that the first filling member is converted from the first state to the second state. Of course, what is discussed here is only one of the situations of the medium state change, and the temperature decrease may also cause the first filling member to be converted from the second state to the first state, and the temperature increase may cause the first filling member to be converted from the first state to the second state, which can be specifically limited according to the properties of the medium.

[0074] The first filling member in the present application is preferably a resin material. In other embodiments, the first filling member may also be other materials, such as silica gel, rubber, etc., which are not specifically limited here and are determined according to actual conditions.

[0075] Among them, the outer edge of the first filling area 21 is located on the inner side of the outer edge of the adsorption body 2 (as shown in the figure), or the outer edge of the first filling area 21 is flush with the outer edge of the adsorption body 2 (as shown in the figure). This application does not make specific limitations and depends on actual conditions.

[0076] See also Figure 8 , and the filling mechanism also includes a second filling piece filled in part of the first channel component A, and the part of the first channel filled with the second filling piece divides the adsorption area 22 into a suction area and a second filling area; when the adsorption body 2 is evacuated, the second filling piece makes the flow rate of the third airflow flowing through the suction area and the wafer 1 greater than the flow rate of the fourth airflow flowing through the second filling area and the wafer 1. The second filling piece is the same as the above-mentioned first filling piece, and the third airflow is the same as the above-mentioned first airflow, and the fourth airflow is the same as the above-mentioned second airflow. The purpose of this setting is to set the filling area according to the actual situation while ensuring the adsorption effect, and further reduce the possibility of the cleaning liquid and bonding glue flowing back to between the adsorption body 2 and the wafer 1.

[0077] As can be seen from the above, the carrier rotates under the driving action of the driving mechanism, and the driving mechanism continues to work when the spraying mechanism sprays and cleans the wafer 1. At this time, the flowing cleaning liquid will be affected by three forces, namely gravity, centrifugal force and adsorption force. Among them, the adsorption force is the force generated when the adsorption area 22 is evacuated, and the centrifugal force and adsorption force are the main forces.

[0078] When the centrifugal force is greater than the adsorption force, that is, the driving mechanism drives the carrier and the adsorption body 2 to rotate at a faster speed, the flowing cleaning liquid will be thrown out to the outside of the adsorption body 2 under the action of the centrifugal force. When the centrifugal force is less than the adsorption force, part of the flowing cleaning liquid will flow to the boundary of the wafer 1, and then be sucked out to the outside of the adsorption body 2 through the micropores under the action of the adsorption force. At the same time, part of the cleaning liquid will still be thrown out to the outside of the adsorption body 2 under the action of the centrifugal force.

[0079] However, when the driving mechanism drives the carrier and the adsorption body 2 to rotate at a fast speed, it is easy to damage the thin wafer 1. Therefore, in this application, it can be selected according to the size and thickness of the wafer 1. In addition, due to the presence of the first filler, the air flow direction of the adsorption area 22 located near the filling area can only be through lateral flow. Therefore, the air flow speed of the adsorption area 22 located outside the filling area is slower. When the vacuum generator stops working (equivalent to evacuating the vacuum), since the air flow speed here is slower, part of the adsorption force can still be maintained, so that the wafer 1 can still be adsorbed on the adsorption body 2 after the vacuum generator stops running, so as to maintain the subsequent process and transportation of the wafer 1.

[0080] The present invention also provides a wafer 1 processing method, using the above-mentioned adsorption device, comprising the following steps:

[0081] The wafer 1 is placed on the adsorption body 2, and there is a gap between the wafer 1 and the adsorption body 2;

[0082] The vacuum generator is operated to form a negative pressure in the adsorption body 2 to eliminate the gap between the wafer 1 and the adsorption body 2;

[0083] Turn off the vacuum generator, and allow the fluid in the adsorption body 2 to flow back, so that the adsorption body 2 and the wafer 1 are separated;

[0084] Among them, there is a first airflow between the wafer 1 and the adsorption area 22 of the adsorption body 2, and a second airflow between the wafer 1 and the filling area of ​​the adsorption body 2. The second airflow flows from the outside through the gap and the adsorption area 22 to the outside, and the first airflow flows through the adsorption area 22 to the outside or from the outside to the adsorption area 22, so that the flow rate of the first airflow is greater than the flow rate of the second airflow, thereby making the adsorption speed between the adsorption area 22 and the wafer 1 greater than the adsorption speed between the filling area and the wafer 1, or making the detachment speed between the adsorption area 22 and the wafer 1 greater than the detachment speed between the filling area and the wafer 1.

[0085] In summary: by providing a blocking area on the adsorption body 2, the blocking area prevents part or all of the fluid from passing through, and thus prevents the fluid from entering the adsorption body 2, thereby achieving the effect of controlling the flow path of the fluid in the adsorption body 2; wherein, the area of ​​the adsorption area 22 on the adsorption body 2 is greater than or equal to the area of ​​the blocking area, so that the wafer 1 can be stably adsorbed on the adsorption body 2 through the adsorption area 22, and the orthographic projection of the wafer 1 on the adsorption body 2 at least covers part of the blocking area, so that there is an overlap between the wafer 1 and the blocking area, thereby preventing the fluid from entering the adsorption body 2 through the blocking area, affecting the subsequent process of the wafer 1 and the final product effect;

[0086] In addition, due to the existence of the blocking area, the airflow in the area near the blocking area can only flow sideways, thereby reducing the airflow velocity there; at the same time, since the adsorption and bonding between the adsorption device and the wafer 1 is similar to the adsorption and bonding between two smooth surfaces, the bonding between the two is more stable. Therefore, when the vacuum is removed, the lateral airflow in the area near the blocking area has a slower flow rate, so that the adsorption body 2 and the wafer 1 can still maintain adsorption for a period of time, which makes it easier to transfer the wafer 1 in the subsequent process, which is more convenient and quick. At the same time, most application scenarios of the adsorption device are to clean the wafer with cleaning liquid sprayed from above under high-speed horizontal rotation, and the problem of the cleaning liquid being sucked into the edge channel is also solved.

[0087] Obviously, the embodiments described above are only some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, ordinary technicians in this field can make other different forms of changes or modifications without creative work, which should fall within the scope of protection of the present invention.

Claims

1. An adsorption device, characterized in that: include: The adsorption body is suitable for placing the wafer and is vacuumed under the action of the vacuum generator to adsorb the wafer; A channel mechanism, suitable for allowing fluid to flow through, and formed on the adsorption body; the channel mechanism includes a plurality of micrometer-level channels, and the plurality of micrometer-level channels extend along the height direction of the adsorption device; the plurality of micrometer-level channels include a first channel component and a second channel component, and the second channel component is arranged around the first channel component; A filling mechanism, comprising a first filling member filled in at least a portion of the second channel component, so that no fluid passes through at least a portion of the second channel component; the second channel component filled with the first filling member forms a first filling area, and the remaining portion of the second channel component and the first channel component form an adsorption area, and the orthographic projection of the wafer overlaps with the first filling area; The first filling member has a first state and a second state, and the hardness of the first state is less than the hardness of the second state; when the first filling member is in the first state, it can flow along the extension direction of the micropores and can be filled in the second channel component; when the first filling member is in the second state, it is fixed in the second channel component, and in the height direction of the adsorption body, the top of the first filling member is flush with the upper surface of the adsorption body; The filling mechanism further includes a second filling member filled in a portion of the first channel component, and the portion of the first channel filled with the second filling member divides the adsorption area into a suction area and a second filling area; wherein the first filling member and the second filling member are resins; Among them, when the adsorption body is evacuated, the first filling piece makes the flow rate of the first airflow flowing through the adsorption area and the wafer greater than the flow rate of the second airflow flowing through the first filling area and the wafer; the second filling piece makes the flow rate of the third airflow flowing through the adsorption area and the wafer greater than the flow rate of the fourth airflow flowing through the second filling area and the wafer.

2. The adsorption device according to claim 1, characterized in that: The flow path of the first airflow includes a first flow section located between the adsorption body and the wafer, and the first flow section and the upper surface of the adsorption body are arranged vertically or nearly vertically.

3. The adsorption device according to claim 1, characterized in that: The flow path of the second airflow includes a second flow section from the outside to the gap between the adsorption body and the wafer, and a third flow section between the adsorption body and the wafer; An included angle between the second flow section and the upper surface of the adsorption body is less than 90°, and an included angle between the third flow section and the upper surface of the adsorption body is less than 90°.

4. The adsorption device according to any one of claims 1 to 3, characterized in that: After the wafer is attracted to the adsorption device, the pressure between the first side surface of the wafer close to the adsorption body and the adsorption body is lower than the pressure of the wafer away from the adsorption body.

5. The adsorption device according to any one of claims 1 to 3, characterized in that: The outer edge of the first filling area is located inside the outer edge of the adsorption body, or the outer edge of the first filling area is flush with the outer edge of the adsorption body.

6. A wafer processing method, characterized in that: The adsorption device according to any one of claims 1 to 5 comprises the following steps: Placing a wafer on the adsorption body, with a gap between the wafer and the adsorption body; operating a vacuum generator to form a negative pressure in the adsorption body to eliminate the gap between the wafer and the adsorption body; Turning off the vacuum generator, causing the fluid in the adsorption body to flow back, so that the adsorption body and the wafer are separated; Among them, there is a first airflow between the wafer and the adsorption area of ​​the adsorption body, and a second airflow between the wafer and the filling area of ​​the adsorption body. The second airflow flows from the outside through the gap and the adsorption area to the outside, and the first airflow flows through the adsorption area to the outside or from the outside to the adsorption area, so that the flow rate of the first airflow is greater than the flow rate of the second airflow, thereby making the adsorption speed between the adsorption area and the wafer greater than the adsorption speed between the filling area and the wafer, or making the detachment speed between the adsorption area and the wafer greater than the detachment speed between the filling area and the wafer.

Images