Device compatible with critical-size small-angle X-ray scattering measurement and X-ray reflectivity measurement

Abstract

The invention relates to the technical field of semiconductor critical dimension measurement, and particularly provides a device compatible with critical dimension small-angle X-ray scattering measurement and X-ray reflectivity measurement, which comprises an SAXS light source unit, an XRR light source unit, an SAXS detection unit, an XRR detection unit and a multi-degree-of-freedom sample table for bearing a sample and driving the sample to rotate, the SAXS measuring light and the XRR measuring light are perpendicular to each other in light path intersection point positions on the multi-degree-of-freedom sample table, the SAXS measuring light is transmitted and passes through a measuring point, the XRR measuring light is reflected by the measuring point, and when the multi-degree-of-freedom sample table rotates to a preset angle range, the SAXS detection unit and the XRR detection unit can synchronously perform SAXS measurement and XRR measurement on a sample, so that the SAXS measurement and the XRR measurement are synchronously performed. The consistency of data obtained by two measurement technologies in spatial positions is ensured, extra time required for transferring samples among different measurement systems is also avoided, and CD-SAXS measurement and XRR measurement of the same measurement point can be simultaneously and synchronously realized through one device.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor critical dimension measurement, and specifically provides a device compatible with critical dimension small-angle X-ray scattering measurement and X-ray reflectivity measurement. Background Art

[0002] Small-angle X-ray scattering (SAXS) is a technique for studying the structural properties of materials at the nanoscale. The process involves exposing a sample to an X-ray beam and measuring the distribution of the scattering intensity as a function of the scattering angle. The scattering intensity of SAXS is related to the spatial arrangement of atoms in the material, which enables researchers to obtain information such as the size, shape, and distribution of relevant nanoscale features in the material. SAXS technology has been widely used in fields such as life sciences and materials science research.

[0003] In the past decade, 3D NAND cache technology has made significant progress in high performance and storage capacity, but its manufacturing challenges are also severe. From chip to device, it takes thousands of processes, so process control is the key to new process development and mass production. At present, the key dimension (CD) measurement technology widely used in the industry for various devices is optical key dimension measurement technology (OCD). However, with the iterative development of 3D NAND manufacturing processes, the number of layers of stacked structures in 3D NAND is increasing, and CD is getting smaller and smaller, forming a unique high aspect ratio (HAR) structure in 3D NAND. Due to the limitations of its optical wavelength and reflectivity, the resolution of OCD is greatly limited. With the increase of HAR of 3D NAND, OCD technology will face increasing challenges in the accurate measurement of 3D NAND HAR structures. At present, the accurate CD measurement of 3D NAND HAR structures relies on destructive imaging techniques such as SEM (scanning electron microscope) and TEM (transmission electron microscope), but the equipment and consumables required for these methods are expensive and very time-consuming, and the statistical feedback for accurate process control is also very little.

[0004] Critical Dimension Small Angle X-ray Scattering (CD-SAXS) is a variable-angle transmission SAXS measurement technology. X-rays are scattered from periodic nanostructures to non-destructively determine the precise size and shape of the structure. And because the wavelength of X-rays is very small, CD-SAXS has unique advantages in measuring the nanostructure of 3D NAND devices. As the HAR of 3D NAND devices increases, the CD-SAXS measurement signal intensity will increase accordingly. At the same time, the deep penetration ability of high-energy X-rays also makes it possible to non-destructively measure complex HAR stacking structures. However, there is currently a lack of an independent device on the market that can effectively measure the complex HAR stacking structure of 3D NAND devices. In the existing SAXS measurement technology and XRR (X-ray reflectivity) measurement technology fusion solution, the SAXS technology refers to reflective small-angle X-ray scattering technology, which cannot be used to achieve some key dimension measurement requirements in the semiconductor industry. In addition, SAXS measurement and XRR measurement usually use the same set of X-ray light sources and detectors to perform SAXS measurement and XRR measurement respectively, which not only increases the measurement time, but may also cause problems such as assembly adjustment of the measurement system or transfer of measurement samples.

[0005] Therefore, developing an integrated CD-SAXS measurement device to perform XRR and CD-SAXS measurements on samples simultaneously is crucial to improving the accuracy and efficiency of the 3D NAND manufacturing process. Such a device will be able to provide fast and accurate measurement results, help optimize the manufacturing process, improve product yield, and reduce production costs. Summary of the invention

[0006] In order to solve the above problems, the present invention provides a device that is compatible with critical dimension small-angle X-ray scattering measurement and X-ray reflectivity measurement. By sharing a multi-degree-of-freedom sample stage (Stage system), simultaneous XRR and CD-SAXS measurements of samples are achieved, reducing the need and time loss for sample transfer between different systems, ensuring the compatibility of the two measurement technologies, and improving measurement efficiency and accuracy.

[0007] The device provided by the present invention is compatible with critical dimension small-angle X-ray scattering measurement and X-ray reflectivity measurement, comprising: A SAXS light source unit providing a first X-ray; an XRR light source unit providing a second X-ray; A multi-degree-of-freedom sample stage, which is arranged on the optical path of the first X-ray and the second X-ray, and the first X-ray is transmitted through the multi-degree-of-freedom sample stage, and the second X-ray is reflected at the position of the multi-degree-of-freedom sample stage; A SAXS detection unit is provided on the transmission path of the transmitted light of the first X-ray and is used to detect a scattered signal of the sample on the multi-degree-of-freedom sample stage; The XRR detection unit is arranged on the transmission path of the reflected light of the second X-ray and is used to detect the reflectivity signal of the sample on the multi-degree-of-freedom sample stage.

[0008] Preferably, the SAXS light source unit comprises a first X-ray light source and a collimating monochromator for performing collimation and monochromatic processing on the first X-rays.

[0009] Preferably, the XRR light source unit comprises a second X-ray light source, and a collimating monochromator for collimating and monochromating the second X-rays.

[0010] Preferably, a SAXS vacuum collimation unit is further provided on the optical path from the SAXS light source unit to the multi-degree-of-freedom sample stage, and the SAXS vacuum collimation unit is used to collimate the first X-ray and provide a vacuum transmission environment for the first X-ray.

[0011] Preferably, a SAXS vacuum scattering unit is further provided on the optical path from the multi-degree-of-freedom sample stage to the SAXS detection unit, and the SAXS vacuum scattering unit is used to provide a vacuum transmission environment for the first X-ray.

[0012] Preferably, the SAXS detection unit is composed of a two-dimensional array X-ray detector for detecting the intensity and angular distribution of the sample scattering signal.

[0013] Preferably, the XRR detection unit is composed of a one-dimensional array X-ray detector or a two-dimensional array X-ray detector, which is used to detect the film electron density and / or film thickness period of the sample.

[0014] Preferably, the optical path of the first X-ray intersects with the optical path of the second X-ray.

[0015] Preferably, the multi-degree-of-freedom sample stage is arranged at the intersection of the optical paths of the first X-ray and the second X-ray.

[0016] Preferably, the first X-ray and the second X-ray are perpendicular to each other at the intersection of the optical paths.

[0017] Preferably, the multi-degree-of-freedom sample stage is used to drive the sample to rotate around a rotation axis that is perpendicular to the first X-ray and the second X-ray and passes through the intersection of the optical paths; During the rotation process, the SAXS detection unit detects the intensity and angle distribution of the sample scattering signal. When the sample rotates to a preset angle range, the XRR detection unit simultaneously detects the film electron density and / or film thickness period of the sample.

[0018] Preferably, the preset angle range is 0 to 4 degrees, or 0 to 5 degrees, or 0 to 6 degrees.

[0019] Preferably, the XRR detection unit is composed of a single-point X-ray detector and a single-axis translation stage, and the single-axis translation stage is used to drive the single-point X-ray detector to move.

[0020] Compared with the prior art, the present invention can achieve the following beneficial effects: The present invention innovatively designs the compatibility between the transmission CD-SAXS measurement system and the XRR measurement system, and CD-SAXS measurement and XRR measurement of the same measurement point can be simultaneously and synchronously realized through one device. Since the CD-SAXS measurement system and the XRR measurement system share the same multi-degree-of-freedom sample stage, it can be ensured that the measurement points of the CD-SAXS measurement and the XRR measurement are the same, thereby improving the scanning compatibility of the two measurement technologies and avoiding the disadvantage of the traditional method that the sample needs to be transferred between the CD-SAXS measurement system and the XRR measurement system. The transfer process increases additional sample measurement time, which is of great significance for improving measurement efficiency and reducing costs. In addition, after the transfer, the measurement points of the CD-SAXS measurement and the XRR measurement are difficult to keep consistent, and errors are easily introduced. However, the present invention does not require sample transfer, and can ensure the consistency of the data obtained by the two measurement technologies in spatial position, thereby avoiding errors that may be introduced by the transfer of samples between different systems and improving the accuracy of the data. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 is a schematic diagram of the structure of a device compatible with critical dimension small-angle X-ray scattering measurement and X-ray reflectivity measurement provided in accordance with an embodiment of the present invention; Figure 2 is a schematic diagram of a maximum scanning angle of a CD-SAXS measurement provided by an embodiment of the present invention; Figure 3 is a schematic diagram of an XRR measurement scanning range provided according to an embodiment of the present invention; Figure 4 Schematic diagram of the minimum value of the CD-SAXS measurement scanning angle provided according to an embodiment of the present invention.

[0022] Reference numerals include: SAXS light source unit 1, SAXS vacuum collimation unit 2, SAXS vacuum scattering unit 3, SAXS detection unit 4; XRR light source unit 5, XRR detection unit 6; Multi-degree-of-freedom sample stage7. DETAILED DESCRIPTION

[0023] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the following description, the same modules are represented by the same reference numerals. In the case of the same reference numerals, their names and functions are also the same. Therefore, the detailed description thereof will not be repeated.

[0024] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and do not constitute a limitation of the present invention.

[0025] In one embodiment of the present invention, in order to overcome the problem that the existing CD-SAXS measurement equipment cannot obtain the phase information of scattered X-rays, which leads to the inability to accurately measure semiconductor structure parameters, a device compatible with critical dimension small-angle X-ray scattering measurement and X-ray reflectivity measurement is provided. The device innovatively adds an X-ray reflectivity measurement system in a direction perpendicular to the CD-SAXS optical path on the basis of the existing CD-SAXS measurement system to perform synchronous XRR measurement on the sample to be measured. In order to ensure the compatibility of CD-SAXS measurement and XRR measurement and avoid increasing the sample measurement time, the following design is performed: See also Figure 1 The device specifically includes: a SAXS light source unit 1, a SAXS vacuum collimation unit 2, a SAXS vacuum scattering unit 3, a SAXS detection unit 4, an XRR light source unit 5, an XRR detection unit 6 and a multi-degree-of-freedom sample stage 7 shared by CD-SAXS measurement and XRR measurement.

[0026] Along the CD-SAXS measurement optical path, there are arranged in sequence: SAXS light source unit 1, SAXS vacuum collimation unit 2, multi-degree-of-freedom sample stage 7, SAXS vacuum scattering unit 3 and SAXS detection unit 4, forming a critical dimension small-angle X-ray scattering (CD-SAXS) measurement system, wherein the SAXS light source unit 1 is used to provide X-rays for CD-SAXS measurement. Specifically, the SAXS light source unit 1 mainly includes an X-ray light source and a collimating monochromator, and the X-ray light source is used to generate a point-divergent X-ray beam during operation. The collimating monochromator is arranged on the subsequent optical path of the X-ray light source, and its function is to collimate and filter the point-divergent and complex-color X-ray beam emitted by the X-ray light source, so as to convert it into a quasi-monochromatic and quasi-parallel X-ray beam. For the convenience of description, this X-ray is recorded as the first X-ray. It is understandable that the design requirement is that the SAXS light source unit 1 can provide a theoretically completely parallel monochromatic X-ray beam. As for the actual working process, due to the influence of objective factors such as equipment, environment, and technical limitations, the X-ray beam cannot meet the theoretical requirements, which has little impact on the final result and does not fall within the scope of research and protection of the present invention.

[0027] The SAXS vacuum collimation unit 2 is arranged on the optical path from the SAXS light source unit 1 to the multi-degree-of-freedom sample stage 7. The SAXS vacuum collimation unit 2 is mainly used to further collimate the first X-ray, realize the precise control of the beam spot size of the first X-ray beam, and provide a vacuum transmission environment for light transmission, thereby reducing the attenuation effect of the air on the first X-ray. Specifically, the SAXS vacuum collimation unit 2 contains three slit systems, and these slits and the optical paths therebetween are all in a vacuum environment, thereby reducing the attenuation effect of the air on the first X-ray, because air and other media will absorb and scatter X-rays, thereby affecting the accuracy of the measurement results.

[0028] After being transmitted by the SAXS vacuum collimation unit 2, the first X-ray is irradiated on the multi-degree-of-freedom sample stage 7. The multi-degree-of-freedom sample stage 7 is a multi-degree-of-freedom stage system of the device of the present invention, which can realize the precise positioning of any point on the sample to be measured, that is, the multi-degree-of-freedom sample stage 7 includes high-precision X, Y, and Z motion axes, which can realize translational motion along the X, Y, and Z axes and rotation around the axis, so that the sample can be driven to perform angular deflection scanning relative to the axis of the CD-SAXS measurement optical path, and the position of the first X-ray irradiated on the sample is adjusted by the high-precision motion axis. It should be noted that here is the change of the spatial position of the sample, so that the first X-ray is irradiated on different positions of the sample, and the spatial position of the first X-ray does not change, so the spatial measurement point of the first X-ray will not change. The spatial measurement point of the first X-ray is actually the intersection of the CD-SAXS measurement optical path and the XRR measurement optical path described below.

[0029] The CD-SAXS measurement system of the device of the embodiment of the present invention is a transmission type. The first X-ray is transmitted through the sample on the multi-degree-of-freedom sample stage 7. The first X-ray that has transmitted through the sample continues to scatter in the subsequent optical path and enters the SAXS vacuum scattering unit 3. The SAXS vacuum scattering unit 3 is arranged on the optical path from the multi-degree-of-freedom sample stage 7 to the SAXS detection unit 4. The SAXS vacuum scattering unit 3 is a vacuum cavity, and its design purpose is to provide a highly vacuum transmission environment, which can significantly reduce the attenuation of the first X-ray during the transmission from the sample to the SAXS detection unit 4. In the CD-SAXS measurement process, the first X-ray will be scattered after irradiating the sample. These scattered signals carry information about the internal structure of the sample. Before reaching the SAXS detection unit 4, the scattered signal should avoid passing through the air or other media to avoid absorption by the transmission medium or re-scattering of the scattered signal, resulting in a weakening of the scattered signal intensity, thereby affecting the quality and accuracy of the measurement results.

[0030] The scattered signal is emitted from the SAXS vacuum scattering unit 3 and then irradiated onto the SAXS detection unit 4. The SAXS detection unit 4 is composed of a two-dimensional array X-ray detector and is used to detect information such as the intensity and angle distribution of the sample scattered signal.

[0031] An XRR measurement optical path is also provided in the vertical direction of the CD-SAXS measurement optical path. The intersection of the CD-SAXS measurement optical path and the XRR measurement optical path is the common measurement point. Specifically, an XRR light source unit 5, a multi-degree-of-freedom sample stage 7 and an XRR detection unit 6 are provided in sequence along the XRR measurement optical path to form an X-ray reflectivity (XRR) measurement system, wherein the XRR light source unit 5 is used to provide X-rays for XRR measurement. Specifically, the XRR light source unit 5 includes an X-ray micro-focus light source and a collimating monochromator. The X-ray micro-focus light source is used to generate a point-divergent X-ray beam. The collimating monochromator is provided on the subsequent optical path of the X-ray micro-focus light source to convert the point-divergent X-rays emitted by the X-ray micro-focus light source into a collimated monochromatic quasi-parallel X-ray beam. For ease of description, the X-ray is recorded as the second X-ray. Similarly, the design requirement for the second X-ray is also a theoretically completely parallel monochromatic X-ray beam.

[0032] Furthermore, the second X-ray and the first X-ray are preferably designed to be perpendicular to each other at the measurement point, which can achieve the best effect. When considering other factors, the second X-ray and the first X-ray can also be designed to be not completely perpendicular at the measurement point, and can be tilted positively or negatively by 0 to 2 degrees relative to the vertical state.

[0033] The second X-ray provided by the XRR light source unit 5 is irradiated onto the multi-degree-of-freedom sample stage 7 shared by the CD-SAXS measurement and the XRR measurement, and the sample on the multi-degree-of-freedom sample stage 7 reflects the second X-ray from the measurement point to the XRR detection unit 6. The XRR detection unit 6 collects the reflectivity signal of the sample, and the XRR detection unit 6 is composed of a one-dimensional array X-ray detector or a two-dimensional array X-ray detector. According to the reflectivity signal, the data such as the electron density of the film layer and the film thickness period of the sample can be obtained. The data such as the electron density of the film layer and the film thickness period of the sample are obtained by XRR measurement, and a numerical simulation model of the sample and a numerical simulation model of small-angle X-ray scattering are constructed. The parameters representing the internal structure of the sample in the numerical simulation model of the sample are iteratively calculated, and the numerical simulation results obtained by the numerical simulation model of small-angle X-ray scattering are fitted with the measurement results of the SAXS detection unit 4 through a regression algorithm to obtain the phase information of the scattering signal measured by CD-SAXS, thereby improving the accuracy of the CD-SAXS measurement results.

[0034] As a preferred embodiment, the XRR detection unit 6 may be composed of a single-point X-ray detector and a single-axis translation stage. The single-point X-ray detector is fixed on the single-axis translation stage, and the single-point X-ray detector is driven by the single-axis translation stage to perform array displacement to receive the reflectivity signal measured by XRR. The advantage of such a design is that the angular resolution of the XRR measurement is no longer limited by the pixel size of the X-ray detector, but is determined by the stepping accuracy of the single-axis translation stage. In theory, a higher angular resolution can be achieved, but it is also necessary to add a single-axis translation stage and its control system, which increases the complexity of the system structure and control to a certain extent. Therefore, this solution is suitable for systems that have high requirements for the angular resolution of the XRR signal and low requirements for system stability.

[0035] Since the device of the embodiment of the present invention has been designed to be compatible with the CD-SAXS measurement system and the XRR measurement system, the two share the multi-degree-of-freedom sample stage 7, and the measurement points of the two systems are the same, which avoids the need to transfer between different system devices during CD-SAXS measurement and XRR measurement, and the device of the embodiment of the present invention can be used to perform CD-SAXS measurement and XRR measurement at the same time, avoiding the increase of additional XRR measurement time during the CD-SAXS measurement process, and improving the efficiency of critical dimension measurement of semiconductor structures. Specifically, when measuring the sample, the first X-ray penetrates the sample measurement point in a transmission manner, and the second X-ray needs to irradiate the measurement point on the sample surface at a small angle and then be reflected by the sample. Therefore, when measuring CD-SAXS, it is necessary to control the multi-degree-of-freedom sample stage 7 to drive the sample to rotate around a rotation axis that is perpendicular to both the CD-SAXS measurement optical path and the XRR measurement optical path and passes through the measurement point. During the rotation, the SAXS detection unit 4 performs angle scanning measurement with a certain angle step, that is, the sample scattering signal is collected once every certain angle. When the surface of the multi-DOF sample stage 7 is perpendicular to the first X-ray, the spatial angle of the multi-DOF sample stage 7 is defined as 0 degrees, and the angle scanning range (or the range of the rotation angle of the multi-DOF sample stage 7) is symmetrical about 0 degrees, that is, the angle scanning range is , usually the angle scanning range is -30°~30°, and there are also other angle scanning ranges, such as -25°~25° or -20°~20°, etc. Within this range, the SAXS detection unit 4 will collect a scattering signal image of the sample at every set step angle, and use the scattering signal image to calculate the sample structure parameters.

[0036] During XRR measurement, the angle between the second X-ray and the DOF sample stage 7 is required to be small. Figure 2 In the case shown, at large angles, only the CD-SAXS measurement system performs CD-SAXS measurement, while the XRR measurement system does not work. Figure 2, when the rotation angle reaches the preset angle range The XRR detection system can collect the sample reflectivity signal while the SAXS detection unit 4 collects the sample scattering image. Under normal circumstances, the preset angle range of XRR measurement is The minimum value of the preset angle range is usually 0°, but the maximum value is sufficient as long as the XRR detection unit 6 can receive the reflected signal. Therefore, it is usually not fixed for different systems. It is understandable that there are , Or other angles. The scanning angle is Within the range, the CD-SAXS measurement optical path and the XRR measurement optical path can simultaneously and synchronously collect scattering images and reflectivity signals from the same measurement point on the sample, without adding additional sample measurement time or sample transfer. The XRR measurement results can provide a data basis for CD-SAXS measurement and further simulation calculations. Figure 2 and 4 When the scanning angle is less than 0° or greater than 5°, the XRR detection unit 6 cannot collect any signal. Therefore, the device compatible with critical dimension small-angle X-ray scattering measurement and X-ray reflectivity measurement provided by the embodiment of the present invention can simultaneously realize the scanning angle range of CD-SAXS measurement and XRR measurement. .

[0037] As a preferred embodiment, the device compatible with critical dimension small-angle X-ray scattering measurement and X-ray reflectivity measurement provided in the embodiment of the present invention is also equipped with a software structure for data processing, mainly including an XRR operation system and a SAXS operation system, wherein the XRR operation system is used to receive the reflectivity signal collected by the XRR detection unit 6, and the XRR operation system can obtain data such as the film electron density and film thickness period of the sample based on the reflectivity signal, and transmit the calculated film electron density and film thickness period data as prior knowledge sharing to the SAXS operation system. The SAXS operation system calculates the structural parameters of the sample measurement point position based on the prior knowledge received from the XRR operation system and the scattering signal synchronously collected by the SAXS detection unit 4, which can greatly improve the calculation accuracy of the sample structural parameters, while also reducing the data processing time and simplifying the data processing flow.

[0038] Although the embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and cannot be understood as limiting the present invention. Any other corresponding changes and modifications made according to the technical concept of the present invention should be included in the protection scope of the claims of the present invention. Those of ordinary skill in the art can change, modify, replace and modify the above embodiments within the scope of the present invention.

Claims

1. A device compatible with critical dimension small angle X-ray scattering measurement and X-ray reflectivity measurement, characterized in that: include: A SAXS light source unit providing a first X-ray; an XRR light source unit providing a second X-ray; A multi-degree-of-freedom sample stage, which is arranged on the optical path of the first X-ray and the second X-ray, and the first X-ray is transmitted through the multi-degree-of-freedom sample stage, and the second X-ray is reflected at the position of the multi-degree-of-freedom sample stage; A SAXS detection unit is provided on the transmission path of the transmitted light of the first X-ray and is used to detect a scattered signal of the sample on the multi-degree-of-freedom sample stage; The XRR detection unit is arranged on the transmission path of the reflected light of the second X-ray and is used to detect the reflectivity signal of the sample on the multi-degree-of-freedom sample stage.

2. The device for measuring critical dimension small angle X-ray scattering and X-ray reflectivity as claimed in claim 1, characterized in that: The SAXS light source unit includes a first X-ray light source and a collimating monochromator for collimating and monochromatizing the first X-rays.

3. The device for compatible critical dimension small angle X-ray scattering measurement and X-ray reflectivity measurement as claimed in claim 1, characterized in that: The XRR light source unit includes a second X-ray light source and a collimating monochromator for collimating and monochromatizing the second X-rays.

4. The device for compatible critical dimension small angle X-ray scattering measurement and X-ray reflectivity measurement as claimed in claim 1, characterized in that: A SAXS vacuum collimation unit is also provided on the optical path from the SAXS light source unit to the multi-degree-of-freedom sample stage, and the SAXS vacuum collimation unit is used to collimate the first X-ray and provide a vacuum transmission environment for the first X-ray.

5. The device for compatible critical dimension small angle X-ray scattering measurement and X-ray reflectivity measurement as claimed in claim 4, characterized in that: A SAXS vacuum scattering unit is also provided on the optical path from the multi-degree-of-freedom sample stage to the SAXS detection unit, and the SAXS vacuum scattering unit is used to provide a vacuum transmission environment for the first X-ray.

6. The device for compatible critical dimension small angle X-ray scattering measurement and X-ray reflectivity measurement as claimed in claim 1, characterized in that: The SAXS detection unit is composed of a two-dimensional array X-ray detector, which is used to detect the intensity and angular distribution of the sample scattering signal.

7. The device for compatible critical dimension small angle X-ray scattering measurement and X-ray reflectivity measurement as claimed in claim 6, characterized in that: The XRR detection unit is composed of a one-dimensional array X-ray detector or a two-dimensional array X-ray detector, and is used to detect the film electron density and / or film thickness period of the sample.

8. The device for compatible critical dimension small angle X-ray scattering measurement and X-ray reflectivity measurement as claimed in claim 1, characterized in that: The optical path of the first X-ray intersects the optical path of the second X-ray.

9. The device for compatible critical dimension small angle X-ray scattering measurement and X-ray reflectivity measurement as claimed in claim 8, characterized in that: The multi-degree-of-freedom sample stage is arranged at the intersection of the optical paths of the first X-ray and the second X-ray.

10. The device for compatible critical dimension small angle X-ray scattering measurement and X-ray reflectivity measurement according to claim 8 or 9, characterized in that: The first X-ray and the second X-ray are perpendicular to each other at the intersection of the optical paths.

11. The device for compatible critical dimension small angle X-ray scattering measurement and X-ray reflectivity measurement as claimed in claim 10, characterized in that: The multi-degree-of-freedom sample stage is used to drive the sample to rotate around a rotation axis that is perpendicular to the first X-ray and the second X-ray and passes through the intersection of the optical paths; During the rotation process, the SAXS detection unit detects the intensity and angle distribution of the sample scattering signal. When the sample rotates to a preset angle range, the XRR detection unit simultaneously detects the film electron density and / or film thickness period of the sample.

12. The device for compatible critical dimension small angle X-ray scattering measurement and X-ray reflectivity measurement as claimed in claim 11, characterized in that: The preset angle range is 0 to 4 degrees, or 0 to 5 degrees, or 0 to 6 degrees.

13. The device for compatible critical dimension small angle X-ray scattering measurement and X-ray reflectivity measurement as claimed in claim 1, characterized in that: The XRR detection unit is composed of a single-point X-ray detector and a single-axis translation stage, and the single-axis translation stage is used to drive the single-point X-ray detector to move.

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