Display structure

Abstract

The invention provides a display structure. The display structure comprises a narrow-band absorber structure; the broadband absorber structure comprises a thin film composed of a dielectric layer and a metal layer, the metal layer is multi-layer and has loss, the K value is larger than a preset threshold value, and the broadband absorber structure is located on the narrow-band absorber structure and coupled with the narrow-band absorber structure to generate bright colors. The multi-layer metal layer with the high K value is adopted in the broadband absorber structure, the reflectivity of a non-target wave band can be restrained, rich colors are generated, the purity of the colors is improved, and the structural assembly has the advantages of being simple in structure, not prone to being influenced by the environment, insensitive to the angle and the like.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a display structure. Background Art

[0002] Nanostructures have attracted much attention for their diverse applications in optical devices, particularly in creating structural color filters and perfect absorbers. By tuning the parameters of these structures, their spectral response, including transmission, reflection, and absorption properties, can be precisely controlled. Color filters play a key role in several fields, including display / imaging devices, color printing, organic solar cells, and light-emitting devices. These devices traditionally rely on pigment dyes or pigments to produce color, but these materials are sensitive to high temperatures, ultraviolet light, and chemicals. Nanostructured color filters are an alternative due to their high resolution, high efficiency, and sustainability.

[0003] Nanostructure configurations based on plasmons, all-dielectric metasurfaces, and guided-mode resonances can produce efficient structural colors. However, these structures usually rely on surface plasmon resonances of metal nanostructures or scattering of metasurfaces, but the complex manufacturing process limits their application. Therefore, photolithography-free thin-film multilayer structures are favored due to their simple structure, high efficiency, and good scalability. In particular, asymmetric Fabry-Perot (FP) nanocavities based on the co-configuration of broadband absorbers and narrowband absorbers have attracted much attention because of their bright colors and angle insensitivity. However, the reflectivity of this structure in non-target peak areas is generally large, resulting in low color purity.

[0004] In existing display technologies, the display structures composed of broadband absorption structures and narrowband absorption structures based on dielectric layers and metal materials have very high reflectivity in non-target peak bands, which will greatly hinder their further application. Therefore, designing a display structure with high color purity has great practical significance. Summary of the invention

[0005] The present invention provides a display structure to solve the defect that the display structure based on asymmetric FP nanocavity in the prior art has a large reflectivity in non-target peak areas, resulting in low color purity. The color purity is improved by introducing multiple layers of metal in the FP cavity to suppress reflection of non-target bands.

[0006] The present invention provides a display structure, comprising:

[0007] Narrowband absorber structure;

[0008] The broadband absorber structure includes a thin film composed of a dielectric layer and a metal layer, wherein the metal layer is multi-layered and has loss, and a K value is greater than a preset threshold. The broadband absorber structure is located above the narrowband absorber structure and is coupled with the narrowband absorber structure to produce bright colors.

[0009] According to a display structure provided by the present invention, the metal layer includes a first metal layer and a second metal layer, and the second metal layer is located on the first metal layer.

[0010] According to a display structure provided by the present invention, the first metal layer is Ag, and the thickness of the first metal layer varies in the range of 10 nm to 100 nm;

[0011] The second metal layer is a Ge, Si or W metal material with a K value greater than the preset threshold, and the thickness of the second metal layer varies in the range of 5nm to 20nm.

[0012] A display structure provided according to the present invention further includes a third metal layer, and the third metal layer is located on the second metal layer.

[0013] According to a display structure provided by the present invention, the third metal layer is a Ti, Si or W metal material having a K value greater than the preset threshold, and the thickness of the third metal layer varies in the range of 5 nm to 20 nm.

[0014] According to a display structure provided by the present invention, the thickness of each metal layer is less than 30 nm.

[0015] According to a display structure provided by the present invention, the dielectric layer includes a first dielectric layer and a second dielectric layer, the second dielectric layer is located on the first dielectric layer, and the dielectric layer is located on the metal layer.

[0016] According to a display structure provided by the present invention, the first dielectric layer is Ta2O3.3, and the thickness of the first dielectric layer is 6nm;

[0017] The second dielectric layer is made of a material such as Ta2O3.5, Ta oxide, TiO2 or SiO2 with a K value of 0, and the thickness of the second dielectric layer varies in the range of 4nm to 500nm.

[0018] According to a display structure provided by the present invention, the narrow-band absorber structure includes a reflective layer, a third dielectric layer, a fourth dielectric layer and the first metal layer which are arranged in sequence from bottom to top.

[0019] According to a display structure provided by the present invention, the reflective layer is Ag, and the thickness of the reflective layer is greater than 50 nm;

[0020] The third dielectric layer is Ta2O3.3, and the thickness of the third dielectric layer is 6nm;

[0021] The fourth dielectric layer is made of Ta2O3.5, Ta oxide, TiO2 or SiO2 with a K value of 0, and the thickness of the fourth dielectric layer varies in the range of 10 nm to 1 micron;

[0022] The first metal layer is Ag, and the thickness of the first metal layer ranges from 10 nm to 100 nm.

[0023] The display structure provided by the present invention adopts multiple metal layers with high K values ​​in a broadband absorber structure to construct an asymmetric Fabry-Perot nanocavity based on the co-configuration of a broadband absorber structure and a narrowband absorber structure. The display structure based on the nanocavity can suppress the reflectivity of non-target bands to produce rich colors and improve the purity of colors. The structural component has the advantages of simple structure, not being easily affected by the environment, and being insensitive to angles. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0025] Figure 1 is a schematic diagram of a display structure provided by the present invention;

[0026] Figure 2 is a schematic diagram of a spectrum diagram of a broadband absorber structure in a display structure provided by the present invention;

[0027] Figure 3 is a diagram of the optical constants N and K values ​​of the first dielectric layer 107Ta2O3.3 in the display structure provided in this embodiment;

[0028] Figure 4 is a diagram of the optical constants N and K values ​​of the second dielectric layer 108Ta2O3.5 in the display structure provided in this embodiment;

[0029] Figure 5 is a schematic diagram of the spectrum of the narrowband absorber structure in the display structure provided in this embodiment and a schematic diagram of the spectrum of the coupling of the broadband and narrowband structures;

[0030] Figure 6 This is a spectrum diagram showing that the structure in which the broadband and narrowband structures are coupled in the display structure provided in this embodiment changes with the thickness of the underlying Ta2O3.5.

[0031] Reference numerals:

[0032] 101: reflective layer; 102: third dielectric layer; 103: fourth dielectric layer; 104: first metal layer; 105: second metal layer; 106: third metal layer; 107: first dielectric layer; 108: second dielectric layer. DETAILED DESCRIPTION

[0033] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0034] Combine the following Figure 1 A display structure of the present invention is described, comprising:

[0035] Narrowband absorber structure;

[0036] The broadband absorber structure includes a thin film composed of a dielectric layer and a metal layer, wherein the metal layer is multi-layered and has loss, and a K value is greater than a preset threshold. The broadband absorber structure is located above the narrowband absorber structure and is coupled with the narrowband absorber structure to produce bright colors.

[0037] The display structure in this embodiment mainly includes a broadband absorber structure and a narrowband absorber structure. When the two are combined, they are the broadband absorber structure and the narrowband absorber structure from top to bottom.

[0038] The broadband absorber structure is a thin film composed of a dielectric and multiple layers of metal with a high K value. It is designed to form a broadband absorber and is mainly used to couple with a narrowband absorber structure to produce bright colors. Moreover, the structure is stable, not easily oxidized, and not easily affected by temperature.

[0039] The broadband absorber structure is composed of multiple metal layers. The metal layers of this structure are two or more layers. The thickness of each metal layer does not exceed 30nm. Each metal layer uses a lossy metal material, that is, the extinction coefficient is not 0. Compared with the display structure composed of the traditional broadband absorber structure and the narrowband absorber structure, this design can better improve its color purity. By introducing multiple layers of metal in the FP cavity to suppress the reflection of non-standard target bands, the color purity can be improved.

[0040] Through this design, the color displayed by the display structure composed of a broadband absorber structure and a narrowband absorber structure can have high color purity to meet the demand for high color purity based on the reflective display market.

[0041] In general, this embodiment adopts a new display structure design idea and successfully develops a display structure that can suppress the high reflectivity of non-target bands. This technical strategy overcomes the inherent limitations of existing structures, has significant technological advancement significance, and opens up new possibilities for the further development of display technology.

[0042] This embodiment uses multiple metal layers with high K values ​​in a broadband absorber structure to construct an asymmetric Fabry-Perot nanocavity based on the co-configuration of a broadband absorber structure and a narrowband absorber structure. The display structure based on the nanocavity can suppress the reflectivity of non-target bands to produce rich colors and improve the purity of colors. The structural component has the advantages of simple structure, not being easily affected by the environment, and being insensitive to angles.

[0043] On the basis of the above embodiment, the metal layer in this embodiment includes a first metal layer 104 and a second metal layer 105 , and the second metal layer 105 is located on the first metal layer 104 .

[0044] The broadband absorber structure has two or more metal layers. The broadband absorber structure in this embodiment includes two metal layers, namely a first metal layer 104 and a second metal layer 105 .

[0045] On the basis of the above embodiment, in this embodiment, the first metal layer 104 is Ag, and the thickness of the first metal layer 104 varies in the range of 10 nm to 100 nm;

[0046] The second metal layer 105 is a metal material such as Ge, Si or W with a K value greater than the preset threshold, and the thickness of the second metal layer 105 varies in the range of 5 nm to 20 nm.

[0047] When the thickness of the first metal layer 104Ag in the broadband absorber structure is 100 nm and the thickness of the second metal layer 105Ge is 12 nm, the spectrum of the broadband absorber structure is as follows: Figure 2 (A) shown.

[0048] When the thickness of the first metal layer 104Ag in the broadband absorber structure is 100 nm and the thickness of the second metal layer 105Ge is 18 nm, the spectrum of the broadband absorber structure is as follows: Figure 2 (B) shown.

[0049] contrast Figure 2 (A) Figure 2 (B) It can be found that as the thickness of Ge increases, its reflectivity becomes lower and the absorption effect becomes better.

[0050] On the basis of the above embodiment, this embodiment further includes a third metal layer 106 , and the third metal layer 106 is located on the second metal layer 105 .

[0051] The broadband absorber structure has two or more metal layers. The broadband absorber structure in this embodiment includes three metal layers, namely, a first metal layer 104 , a second metal layer 105 and a third metal layer 106 .

[0052] On the basis of the above embodiments, the third metal layer 106 in this embodiment is a metal material such as Ti, Si or W having a K value greater than the preset threshold, and the thickness of the third metal layer 106 varies in the range of 5nm to 20nm.

[0053] When the thickness of the first metal layer 104Ag in the broadband absorber structure is 100nm, the thickness of the second metal layer 105Ge is 12nm, and the thickness of the third metal layer 106Ti is 6nm, the spectrum of the broadband absorber structure is as follows: Figure 2 (C) shown.

[0054] contrast Figure 2 (A) Figure 2 (C) It can be found that Figure 2 (C) The overall absorption effect is better.

[0055] On the basis of the above embodiment, the dielectric layer in this embodiment includes a first dielectric layer 107 and a second dielectric layer 108 . The second dielectric layer 108 is located on the first dielectric layer 107 . The dielectric layer is located on the metal layer.

[0056] In this embodiment, the dielectric layer in the broadband absorber structure includes two layers, namely a first dielectric layer 107 and a second dielectric layer 108 .

[0057] When the broadband absorber structure includes two metal layers, the first dielectric layer 107 and the second dielectric layer 108 are located on the second metal layer 105 .

[0058] When the broadband absorber structure includes three metal layers, the first dielectric layer 107 and the second dielectric layer 108 are located on the third metal layer 106 .

[0059] Based on the above embodiments, in this embodiment, the first dielectric layer 107 is Ta2O3.3, the thickness of the first dielectric layer 107 is 6nm, the second dielectric layer 108 is Ta2O3.5 with a K value of 0, Ta oxide, TiO2 or SiO2 and other materials, and the thickness of the second dielectric layer 108 varies in the range of 4nm to 500nm.

[0060] The first dielectric layer 107 is mainly used to prevent oxidation of the bottom layer of Ag, and the second dielectric layer 108 is mainly used to improve the saturation of color display.

[0061] Figure 3 3 is a diagram of the optical constants N and K values ​​of the first dielectric layer 107Ta2O3.3 in the display structure provided in this embodiment. Figure 4 1 is a diagram of the optical constants N and K values ​​of the second dielectric layer 108Ta2O3.5 in the display structure provided in this embodiment.

[0062] When the broadband absorber structure includes two metal layers, the thickness of the first metal layer 104Ag is 100nm, the thickness of the second metal layer 105Ge is 12nm, the thickness of the first dielectric layer 107Ta2O3.3 is 6nm, and the thickness of the second dielectric layer 108Ta2O3.5 is 24nm, the spectrum of the broadband absorber structure is as follows: Figure 2 (D) as shown.

[0063] When the broadband absorber structure includes two metal layers, the thickness of the first metal layer 104Ag is 100nm, the thickness of the second metal layer 105Ge is 18nm, the thickness of the first dielectric layer 107Ta2O3.3 is 6nm, and the thickness of the second dielectric layer 108Ta2O3.5 is 24nm, the spectrum of the broadband absorber structure is as follows: Figure 2 (E) as shown.

[0064] When the broadband absorber structure includes three metal layers, the thickness of the first metal layer 104Ag is 100nm, the thickness of the second metal layer 105Ge is 12nm, the thickness of the third metal layer 106Ti is 6nm, the thickness of the first dielectric layer 107Ta2O3.3 is 6nm, and the thickness of the second dielectric layer 108Ta2O3.5 is 24nm, the spectrum of the broadband absorber structure is as follows: Figure 2 (F) As shown in the surface structure, Figure 2 (F) has a better overall absorption effect, and its reflectivity is better in the range of 400nm to 800nm.

[0065] contrast Figure 2 (D) Figure 2 (E) and Figure 2 (F) It can be found that after adding the dielectric layer Figure 2 (F) The corresponding broadband absorption structure has good curve absorption and low reflectivity in the overall range.

[0066] On the basis of the above-mentioned embodiment, the narrow-band absorber structure in this embodiment includes a reflective layer 101 , a third dielectric layer 102 , a fourth dielectric layer 103 and the first metal layer 104 arranged in sequence from bottom to top.

[0067] On the basis of the above embodiment, the reflective layer 101 in this embodiment is Ag, and the thickness of the reflective layer 101 is greater than 50 nm;

[0068] The third dielectric layer 102 is Ta2O3.3, and the thickness of the third dielectric layer 102 is 6 nm;

[0069] The fourth dielectric layer 103 is Ta2O3.5, and the thickness of the fourth dielectric layer 103 varies in the range of 10 nm to 1 micron;

[0070] The first metal layer 104 is Ag, and the thickness of the first metal layer 104 ranges from 10 nm to 100 nm.

[0071] The third dielectric layer 102 is mainly used to prevent oxidation of Ag in the reflective layer 101. The fourth dielectric layer 103 is mainly used to produce color, and its color will change when the thickness of the layer is changed.

[0072] When the thickness of the reflective layer 101Ag in the narrow-band absorber structure is 100nm, the thickness of the third dielectric layer 102Ta2O3.3 is 6nm, the thickness of the fourth dielectric layer 103Ta2O3.5 is 104nm, and the thickness of the first metal layer 104Ag is 25nm, the spectrum of the narrow-band absorber structure is as follows: Figure 5 (A) shown.

[0073] When the thickness of the reflective layer 101Ag in the narrow-band absorber structure is 100nm, the thickness of the third dielectric layer 102Ta2O3.3 is 6nm, the thickness of the fourth dielectric layer 103Ta2O3.5 is 104nm, and the thickness of the first metal layer 104Ag is 30nm, the spectrum of the narrow-band absorber structure is as follows: Figure 5 (B) shown.

[0074] When the thickness of the reflective layer 101Ag in the narrow-band absorber structure is 100nm, the thickness of the third dielectric layer 102Ta2O3.3 is 6nm, the thickness of the fourth dielectric layer 103Ta2O3.5 is 104nm, and the thickness of the first metal layer 104Ag is 35nm, the spectrum of the narrow-band absorber structure is as follows: Figure 5 (C) shown.

[0075] contrast Figure 5 (A) Figure 5 (B) and Figure 5 (C) It can be found that as the thickness of the Ag layer increases, the half-width of its narrow-band absorption structure becomes narrower.

[0076] When, in the display structure in which the broadband absorber structure is coupled with the narrowband absorber structure, the thickness of the reflective layer 101Ag is 100nm, the thickness of the third dielectric layer 102Ta2O3.3 is 6nm, the thickness of the fourth dielectric layer 103Ta2O3.5 is 104nm, the thickness of the first metal layer 104Ag is 25nm, the thickness of the second metal layer 105Ge is 12nm, the thickness of the third metal layer 106Ti is 6nm, the thickness of the first dielectric layer 107Ta2O3.3 is 6nm, and the thickness of the second dielectric layer 108Ta2O3.5 is 24nm, the spectrum of the display structure is as follows: Figure 5 (D) as shown.

[0077] When, in the display structure in which the broadband absorber structure is coupled with the narrowband absorber structure, the thickness of the reflective layer 101Ag is 100nm, the thickness of the third dielectric layer 102Ta2O3.3 is 6nm, the thickness of the fourth dielectric layer 103Ta2O3.5 is 108nm, the thickness of the first metal layer 104Ag is 30nm, the thickness of the second metal layer 105Ge is 18nm, the thickness of the third metal layer 106Ti is 6nm, the thickness of the first dielectric layer 107Ta2O3.3 is 6nm, and the thickness of the second dielectric layer 108Ta2O3.5 is 24nm, the spectrum of the display structure is as follows: Figure 5 (E) as shown.

[0078] When, in the display structure in which the broadband absorber structure is coupled with the narrowband absorber structure, the thickness of the reflective layer 101Ag is 100nm, the thickness of the third dielectric layer 102Ta2O3.3 is 6nm, the thickness of the fourth dielectric layer 103Ta2O3.5 is 108nm, the thickness of the first metal layer 104Ag is 30nm, the thickness of the second metal layer 105Ge is 12nm, the thickness of the third metal layer 106Ti is 6nm, the thickness of the first dielectric layer 107Ta2O3.3 is 6nm, and the thickness of the second dielectric layer 108Ta2O3.5 is 24nm, the spectrum of the display structure is as follows: Figure 5 As shown in (F), the surface structure shows that the overall reflection of the structure is good, the reflectivity is good in the azimuth from 400nm to 800nm, the spectral peak pulse width is narrow, and the spectral reflectivity in the non-target area is low.

[0079] contrast Figure 5 (D) and Figure 5 (F) It can be found that the increase in the thickness of the first metal layer 104Ag will cause the peak to become lower, but the width of the entire peak area will become narrower and the color saturation will increase. Therefore, the thickness of the first metal layer 104Ag can be selected to be 30nm. Figure 5 (D) Figure 5 (E) and Figure 5(F) It can be found that the double-layer metal combination makes its reflectivity lower in non-target areas.

[0080] When, in a display structure in which a broadband absorber structure is coupled with a narrowband absorber structure, the thickness of the reflective layer 101Ag is 100nm, the thickness of the third dielectric layer 102Ta2O3.3 is 6nm, the thickness of the fourth dielectric layer 103Ta2O3.5 is t, the thickness of the first metal layer 104Ag is 30nm, the thickness of the second metal layer 105Ge is 12nm, the thickness of the third metal layer 106Ti is 6nm, the thickness of the first dielectric layer 107Ta2O3.3 is 6nm, and the thickness of the second dielectric layer 108Ta2O3.5 is 24nm, the spectrum of the thickness t of the fourth dielectric layer 103Ta2O3.5 changing from 54nm to 120nm is as shown in FIG. Figure 6 As shown, it can be seen that its spectral peak is narrow and the reflectivity of the non-target area is low.

[0081] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A display structure, characterized in that: include: Narrowband absorber structure; The broadband absorber structure includes a thin film composed of a dielectric layer and a metal layer, wherein the metal layer is multi-layered and has loss, and a K value is greater than a preset threshold. The broadband absorber structure is located above the narrowband absorber structure and is coupled with the narrowband absorber structure to produce bright colors.

2. The display structure according to claim 1, characterized in that: The metal layer includes a first metal layer and a second metal layer, wherein the second metal layer is located on the first metal layer.

3. The display structure according to claim 2, characterized in that: The first metal layer is Ag, and the thickness of the first metal layer varies in the range of 10nm to 100nm; The second metal layer is a Ge, Si or W metal material with a K value greater than the preset threshold, and the thickness of the second metal layer varies in the range of 5nm to 20nm.

4. The display structure according to claim 2, characterized in that: The invention also includes a third metal layer, wherein the third metal layer is located on the second metal layer.

5. The display structure according to claim 4, characterized in that: The third metal layer is a Ti, Si or W metal material with a K value greater than the preset threshold, and the thickness of the third metal layer varies in the range of 5nm to 20nm.

6. The display structure according to claim 1, characterized in that: The thickness of each metal layer is less than 30nm.

7. The display structure according to claim 2 or 4, characterized in that: The dielectric layer includes a first dielectric layer and a second dielectric layer, the second dielectric layer is located on the first dielectric layer, and the dielectric layer is located on the metal layer.

8. The display structure according to claim 7, characterized in that: The first dielectric layer is Ta2O3.3, which is used to prevent the bottom metal from being oxidized, and the thickness of the first dielectric layer is 6nm; The second dielectric layer is Ta2O3.5, Ta oxide, TiO2 or SiO2 with a K value of 0, and the thickness of the second dielectric layer varies in the range of 4nm to 500nm.

9. The display structure according to claim 2 or 4, characterized in that: The narrow-band absorber structure includes a reflective layer, a third dielectric layer, a fourth dielectric layer and the first metal layer which are arranged in sequence from bottom to top.

10. The display structure according to claim 9, characterized in that: The reflective layer is Ag, and the thickness of the reflective layer is greater than 50 nm; The third dielectric layer is Ta2O3.3, and the thickness of the third dielectric layer is 5 to 10 nm; The fourth dielectric layer is Ta2O3.5, Ta oxide, TiO2 or SiO2, the K value of the material is 0, and the thickness of the fourth dielectric layer varies in the range of 10nm to 1 micron; The first metal layer is Ag, and the thickness of the first metal layer ranges from 10 nm to 100 nm.

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