Preparation method of high-resolution pattern and nanoimprint pattern master mask

Abstract

The invention provides a preparation method of a high-resolution pattern and a nanoimprint pattern mother set, and the preparation method utilizes the characteristics of high selection ratio and directivity of a deep silicon etching technology and high step coverage of a thin film deposition technology to reduce the size of the pattern in a mode of depositing a thin film in a pattern gap. Therefore, a nanoimprint pattern with higher resolution and smaller size can be obtained on the premise that the resolution of electron beam lithography does not need to be improved, meanwhile, control over different morphologies of the nanoimprint master mask and reduction or amplification of the size of the master mask pattern can be achieved by modifying parameters of etching and thin film deposition, and the method is suitable for large-scale production. And further obtaining the nanoimprint patterns with different feature sizes. Besides, according to the preparation method, the nanoimprint pattern with the adjustable size is obtained on the premise that the mask is not changed, that is, only one mask is used, the technological process is greatly simplified, and the cost is reduced.

Description

Technical Field

[0001] The present application relates to the technical field of nanoimprinting, and in particular to a method for preparing high-resolution graphics and a nanoimprinting graphic master. Background Art

[0002] Nanoimprint technology is a micro-nano manufacturing technology based on micro-nanoscale precision. It achieves nanometer-level precision and resolution by imprinting microstructure patterns onto substrates. It has broad application prospects in semiconductor manufacturing, MEMS (micro-electromechanical systems), biomedicine and other fields. Nanoimprint technology overcomes the difficulties of traditional photolithography in reducing feature size, and has the advantages of low cost, high resolution and high yield in low-end photolithography manufacturing. The preparation of nanoimprint masters is inseparable from high-resolution photolithography technologies such as electron beam lithography. To further improve the resolution of nanoimprint masters, the method usually adopted is to improve the resolution of electron beam lithography itself. However, there are technical constraints in improving the resolution of electron beam lithography, which is difficult and costly. Moreover, electron beam lithography itself has shortcomings such as long exposure time, high price and proximity effect, which restrict the further development and popularization of nanoimprint technology.

[0003] Therefore, how to obtain a nanoimprint master with high resolution and smaller size without improving the resolution of electron beam lithography itself is an urgent problem to be solved by those skilled in the art. Summary of the invention

[0004] In view of this, the present application provides a method for preparing high-resolution graphics and a nanoimprint graphic master, which can effectively solve the existing problems of difficulty and high cost in improving the resolution of electron beam lithography itself.

[0005] The present application provides a method for preparing a high-resolution graphic, comprising the following steps:

[0006] S100: providing a first substrate, and disposing a mask having a first pattern structure on the first substrate;

[0007] S200: using a deep silicon etching process to obtain a second graphic structure on the first substrate through the first graphic structure, and removing the mask;

[0008] S300: depositing a passivation layer on the side of the first substrate where the second graphic structure is located, so that the passivation layer covers the inner wall of the second graphic structure and the surface of the first substrate, thereby obtaining a first nanoimprint master;

[0009] S400: filling the pattern gap of the first nanoimprint master with a master adhesive so that the master adhesive is patterned into a master adhesive pattern, and transferring the master adhesive pattern through a soft film;

[0010] S500: providing a second substrate and coating a nanoimprint adhesive on the second substrate, pressing the master adhesive pattern onto the nanoimprint adhesive, performing UV curing on the nanoimprint adhesive, separating the master adhesive pattern, that is, forming a master pattern structure on the nanoimprint adhesive.

[0011] In one embodiment, the passivation layer is made of silicon dioxide or silicon nitride.

[0012] In one embodiment, the deposition method of the passivation layer includes low pressure chemical vapor deposition, thermal oxidation, atomic layer deposition or plasma enhanced chemical vapor deposition.

[0013] In one embodiment, the soft film is a flexible transparent material.

[0014] The present application also provides a method for preparing a high-resolution graphic, comprising the following steps:

[0015] H100: providing a first substrate, and disposing a mask having a first pattern structure on the first substrate;

[0016] H200: using a deep silicon etching process to obtain a second graphic structure on the first substrate through the first graphic structure, and removing the mask;

[0017] H300: depositing a passivation layer on the side of the first substrate where the second graphic structure is located, so that the passivation layer covers the inner wall of the second graphic structure and the surface of the first substrate;

[0018] H400: removing the portion of the passivation layer located on the surface of the first substrate and the portion of the bottom wall of the second graphic structure to obtain a second nanoimprint master;

[0019] H500: filling the pattern gap of the second nanoimprint master with a master glue so that the master glue is patterned into a master glue pattern, and transferring the master glue pattern through a soft film;

[0020] H600: Provide a second substrate and coat nanoimprint adhesive on the second substrate, press the master adhesive pattern onto the nanoimprint adhesive, perform UV curing on the nanoimprint adhesive, separate the master adhesive pattern, and form a master pattern structure on the nanoimprint adhesive.

[0021] In one embodiment, the step H400 also includes: removing the portion of the passivation layer located on the surface of the first substrate and the portion of the bottom wall of the second graphic structure by reactive ion etching, and thinning the passivation layer on the side wall of the second graphic structure by partial isotropic etching.

[0022] The present application also provides a method for preparing a high-resolution graphic, comprising the following steps:

[0023] Q100: providing a first substrate, and disposing a mask having a first graphic structure on the first substrate;

[0024] Q200: using a deep silicon etching process to obtain a second graphic structure on the first substrate through the first graphic structure, and removing the mask;

[0025] Q300: thermally oxidizing the surface of the first substrate to form an oxide layer, wherein the oxide layer covers the inner wall of the second graphic structure;

[0026] Q400: removing the oxide layer to obtain a third nanoimprint master;

[0027] Q500: Filling the pattern gap of the third nanoimprint master with a master glue so that the master glue is patterned into a master glue pattern, and transferring the master glue pattern through a soft film;

[0028] Q600: Provide a second substrate and coat nanoimprint adhesive on the second substrate, press the master adhesive pattern onto the nanoimprint adhesive, perform UV curing on the nanoimprint adhesive, separate the master adhesive pattern, and form a master pattern structure on the nanoimprint adhesive.

[0029] In one embodiment, in the step Q400, the oxide layer is removed by a buffered oxide etching solution or a dilute hydrofluoric acid solution.

[0030] In one embodiment, the thickness of the oxide layer is X, and the thickness of the first substrate consumed by thermal oxidation is 0.44X.

[0031] The present application also provides a nanoimprint pattern master, which is manufactured using the high-resolution pattern preparation method as described above.

[0032] In summary, the present application provides a method for preparing high-resolution graphics and a nanoimprint graphic master. The preparation method utilizes the high selectivity and directionality of deep silicon etching technology and the high step coverage of thin film deposition technology, and reduces the size of the graphics by depositing a thin film in the gap between the graphics, thereby obtaining a nanoimprint graphic with higher resolution and smaller size without increasing the resolution of the electron beam lithography itself. At the same time, by modifying the parameters of etching and thin film deposition, the control of different morphologies of the nanoimprint master and the reduction or enlargement of the size of the master graphic can be achieved, thereby obtaining nanoimprint graphics with different characteristic sizes. In addition, the preparation method of the present application obtains a nanoimprint graphic with adjustable size without changing the mask, that is, only one mask is used, which greatly simplifies the process flow and reduces costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 The figure is a schematic diagram of a process for preparing a high-resolution graphic in one embodiment of the present application.

[0034] Figure 2 for Figure 1 Schematic diagram of the process of preparing medium and high resolution graphics.

[0035] Figure 3 The figure is a schematic diagram of a process for preparing a high-resolution graphic in one embodiment of the present application.

[0036] Figure 4 for Figure 3 Schematic diagram of the process of preparing medium and high resolution graphics.

[0037] Figure 5 The figure is a schematic diagram of a process for preparing a high-resolution graphic in one embodiment of the present application.

[0038] Figure 6 for Figure 5 Schematic diagram of the process of preparing medium and high resolution graphics.

[0039] Figure numerals: 10 - first substrate; 12 - mask; 14 - first graphic structure; 16 - second graphic structure; 18 - passivation layer; 20 - first nanoimprint master; 22 - master glue pattern; 24 - soft film; 26 - second substrate; 28 - nanoimprint glue; 30 - master graphic structure; 32 - second nanoimprint master; 34 - oxide layer; 36 - third nanoimprint master. DETAILED DESCRIPTION

[0040] Before describing the embodiments in detail, it should be understood that the present application is not limited to the detailed structure or component arrangement described below or in the drawings in the present application. The present application may be an embodiment implemented in other ways. Moreover, it should be understood that the words and terms used herein are only used for descriptive purposes and should not be interpreted restrictively. The words "including", "comprising", "having" and the like used herein are meant to include the items listed thereafter, their equivalents and other additional items. In particular, when describing "a certain element", the present application does not limit the number of the element to one, but may also include multiple elements.

[0041] Embodiment 1

[0042] Please refer to Figure 1 As shown, the present application provides a method for preparing a high-resolution graphic, comprising the following steps:

[0043] S100: providing a first substrate 10, and disposing a mask 12 having a first pattern structure 14 on the first substrate 10;

[0044] S200: using a deep silicon etching process to form a second graphic structure 16 on the first substrate 10 through the first graphic structure 14, and removing the mask 12;

[0045] S300: depositing a passivation layer 18 on the side of the first substrate 10 where the second graphic structure 16 is located, so that the passivation layer 18 covers the inner wall of the second graphic structure 16 and the surface of the first substrate 10, thereby obtaining a first nanoimprint master 20;

[0046] S400: Filling the pattern gap of the first nanoimprint master 20 with a master glue so that the master glue is patterned into a master glue pattern 22, and transferring the master glue pattern 22 through the soft film 24;

[0047] S500: providing a second substrate 26 and coating a nanoimprint adhesive 28 on the second substrate 26 , pressing a master adhesive pattern 22 onto the nanoimprint adhesive 28 , performing UV curing on the nanoimprint adhesive 28 , separating the master adhesive pattern 22 , and forming a master pattern structure 30 on the nanoimprint adhesive 28 .

[0048] More specifically, if Figure 2 As shown, the specific technical solutions include:

[0049] A first substrate 10 is provided, and the first substrate 10 is made of silicon, for example. A mask 12 having a first graphic structure 14 is arranged on the first substrate 10, wherein the first graphic structure 14 is, for example, a hollow structure that is arranged through the mask 12. The mask 12 is, for example, a photolithography mask, and electron beam photoresist can be used. The electron beam photoresist can be selected to be positive or negative. The positive resist is, for example, PMMA (polymethyl methacrylate), ZEP-520A (a modified resist with a benzene ring added to PMMA, composed of a copolymer of α-chloromethylacrylate and α-methylstyrene), or AR-P 6200 (SCAR62), and the negative resist is, for example, HSQ (whose component is an inorganic compound based on silicon dioxide, composed of a hydrogen silicate resin in a methyl isobutyl ketone solvent). In this embodiment, the mask 12 uses a positive resist.

[0050] A second graphic structure 16 is formed on a first substrate 10 through a first graphic structure 14 by a deep silicon etching process. The second graphic structure 16 is, for example, a groove structure. A nanoimprint master pattern with a high aspect ratio is obtained by deep silicon etching. At this time, the gap width of the pattern is a1. Then, the mask 12 is removed by a dry treatment method such as oxygen plasma or argon plasma.

[0051] A passivation layer 18 is deposited on the side of the second graphic structure 16 of the first substrate 10. The passivation layer 18 can be made of materials such as silicon dioxide or silicon nitride. The obtained inorganic thin film will not have any imprint glue residue, can be used repeatedly for a long time, and is not afraid of high-temperature processes, so that the passivation layer 18 covers the inner wall of the second graphic structure 16 and the upper surface of the first substrate 10 to obtain a first nanoimprint master 20; optionally, the passivation layer 18 is deposited by low-pressure chemical vapor deposition, thermal oxidation, atomic layer deposition, or plasma-enhanced chemical vapor deposition. These deposition methods are commonly used semiconductor processes, which make the production line equipment more compatible and also make the first substrate 10 have high step coverage. At this time, the thickness and sidewall coverage of the deposited passivation layer 18 can be controlled by controlling the parameters, so that the passivation layer 18 does not affect the accuracy of the master pattern after deposition; the thickness of the passivation layer 18 deposited on the side wall of the second graphic structure 16 is b1, therefore, the gap width of the first nanoimprint master 20 is a1-2b1, so as to achieve the purpose of reducing the graphic size of the first nanoimprint master 20 and having a higher resolution.

[0052] The master pattern is transferred. Specifically, the first nanoimprint master 20 can be subjected to an anti-sticking treatment first, and then the master glue is filled in the pattern gap of the first nanoimprint master 20. For example, the filling can be performed by spin coating, so that the master glue is patterned into a master glue pattern 22. The anti-sticking treatment can reduce the adhesion between the master glue and the first nanoimprint master 20, so as to facilitate the subsequent transfer of the master glue; the master glue pattern 22 is combined and transferred out through the soft film 24. The soft film 24 can be made of flexible transparent materials such as PET (polyethylene terephthalate) to facilitate the UV curing treatment in the subsequent nanoimprint process.

[0053] A second substrate 26 is provided and a nanoimprint adhesive 28 is coated on the second substrate 26. The second substrate 26 is made of a transparent material, such as quartz glass or SiC wafer, and the nanoimprint adhesive 28 can be coated on the second substrate 26 by spin coating. The side of the soft film 24 where the master adhesive pattern 22 is provided is pressed onto the side of the second substrate 26 where the nanoimprint adhesive 28 is provided, and the soft film 24 is in close contact with the second substrate 26. The nanoimprint adhesive 28 is uniformly pressed so that the nanoimprint adhesive 28 is filled into the master adhesive pattern 22 under the action of surface tension, or the master adhesive pattern 22 is embedded in the nanoimprint adhesive 28. After the nanoimprint adhesive 28 is ultraviolet-cured for a period of time, the master adhesive pattern 22 is separated from the nanoimprint adhesive 28, that is, a high-resolution and small-size master pattern structure 30 (that is, a nanoimprint pattern master) is formed on the nanoimprint adhesive 28. At this time, the gap width of the master pattern structure 30 is a1′=a1-2b1.

[0054] Embodiment 2

[0055] Please refer to Figure 3 As shown, the present application provides a method for preparing a high-resolution graphic, comprising the following steps:

[0056] H100: providing a first substrate 10, and disposing a mask 12 having a first graphic structure 14 on the first substrate 10;

[0057] H200: using a deep silicon etching process to form a second graphic structure 16 on the first substrate 10 through the first graphic structure 14, and removing the mask 12;

[0058] H300: depositing a passivation layer 18 on the side of the first substrate 10 where the second graphic structure 16 is located, so that the passivation layer 18 covers the inner wall of the second graphic structure 16 and the surface of the first substrate 10;

[0059] H400: removing the portion of the passivation layer 18 located on the surface of the first substrate 10 and the portion of the bottom wall of the second pattern structure 16 to obtain a second nanoimprint master 32;

[0060] H500: Filling the pattern gap of the second nanoimprint master 32 with master glue, so that the master glue is patterned into a master glue pattern 22, and the master glue pattern 22 is combined and transferred out through the soft film 24;

[0061] H600: Provide a second substrate 26 and coat a nanoimprint adhesive 28 on the second substrate 26 , press the master adhesive pattern 22 onto the nanoimprint adhesive 28 , perform UV curing on the nanoimprint adhesive 28 , separate the master adhesive pattern 22 , and form a master pattern structure 30 on the nanoimprint adhesive 28 .

[0062] Furthermore, step H400 also includes: removing the portion of the passivation layer 18 located on the surface of the first substrate 10 and the portion of the bottom wall of the second graphic structure 16 by reactive ion etching, and thinning the passivation layer 18 on the side wall of the second graphic structure 16 by partial isotropic etching.

[0063] More specifically, if Figure 4 As shown, the specific technical solutions include:

[0064] A first substrate 10 is provided, and the first substrate 10 is made of silicon, for example. A mask 12 having a first graphic structure 14 is arranged on the first substrate 10, wherein the first graphic structure 14 is, for example, a hollow structure that is arranged through the mask 12. The mask 12 is, for example, a photolithography mask, and electron beam photoresist can be used. The electron beam photoresist can be selected to be positive or negative. The positive resist is, for example, PMMA (polymethyl methacrylate), ZEP-520A (a modified resist with a benzene ring added to PMMA, composed of a copolymer of α-chloromethylacrylate and α-methylstyrene), or AR-P 6200 (SCAR62), and the negative resist is, for example, HSQ (whose component is an inorganic compound based on silicon dioxide, composed of a hydrogen silicate resin in a methyl isobutyl ketone solvent). In this embodiment, the mask 12 uses a positive resist.

[0065] A second graphic structure 16 is formed on the first substrate 10 through the first graphic structure 14 by a deep silicon etching process. The second graphic structure 16 is, for example, a groove structure. A nanoimprint master pattern with a high aspect ratio is obtained after deep silicon etching. At this time, the gap width of the pattern is a2. Then, the mask 12 is removed by a dry treatment method such as oxygen plasma or argon plasma.

[0066] A passivation layer 18 is deposited on the side of the first substrate 10 where the second graphic structure 16 is located. The passivation layer 18 can be made of materials such as silicon dioxide or silicon nitride, so that the passivation layer 18 covers the inner wall of the second graphic structure 16 and the upper surface of the first substrate 10; optionally, the passivation layer 18 is deposited by low-pressure chemical vapor deposition, thermal oxidation, atomic layer deposition or plasma enhanced chemical vapor deposition, so that the first substrate 10 has high step coverage. At this time, the thickness and sidewall coverage of the deposited passivation layer 18 can be controlled by controlling parameters, so that the accuracy of the master pattern is not affected after the passivation layer 18 is deposited.

[0067] The portion of the passivation layer 18 located on the surface of the first substrate 10 and the portion of the bottom wall of the second pattern structure 16 are removed to obtain a second nanoimprint master 32 . Specifically, the portion of the passivation layer 18 located on the surface of the first substrate 10 and the portion of the bottom wall of the second graphic structure 16 are removed by reactive ion etching, and at the same time, the passivation layer 18 on the side wall of the second graphic structure 16 is thinned by partial isotropic etching. For example, due to the etching directionality, the portion of the surface of the first substrate 10 and the portion of the bottom wall of the second graphic structure 16 will be etched first, and a layer of the passivation layer 18 on the side wall of the second graphic structure 16 will remain after thinning, further improving the aspect ratio of the graphic structure. The thickness of the passivation layer 18 on the side wall of the second graphic structure 16 after thinning is b2; in this way, when the accuracy of the target graphic is affected after the deposition of the passivation layer 18, the influence can be eliminated by etching to ensure the accuracy of the target graphic; therefore, the gap width of the second nanoimprint master 32 is a2-2b2, so as to achieve the purpose of reducing the graphic size of the second nanoimprint master 32 and having a higher resolution.

[0068] The master pattern is transferred. Specifically, the second nanoimprint master 32 can be treated with anti-sticking first, and then the master glue is filled in the pattern gap of the second nanoimprint master 32. For example, the filling can be performed by spin coating, so that the master glue is patterned into a master glue pattern 22. The anti-sticking treatment can reduce the adhesion between the master glue and the second nanoimprint master 32, so as to facilitate the subsequent transfer of the master glue; the master glue pattern 22 is combined and transferred out through the soft film 24. The soft film 24 can adopt a flexible transparent material such as PET (polyethylene terephthalate) to facilitate the UV curing treatment in the subsequent nanoimprint process.

[0069] A second substrate 26 is provided and a nanoimprint adhesive 28 is coated on the second substrate 26. The second substrate 26 is made of a transparent material, such as quartz glass or SiC wafer, and the nanoimprint adhesive 28 can be coated on the second substrate 26 by spin coating. The side of the soft film 24 where the master adhesive pattern 22 is provided is pressed onto the side of the second substrate 26 where the nanoimprint adhesive 28 is provided, and the soft film 24 is in close contact with the second substrate 26. The nanoimprint adhesive 28 is uniformly pressed so that the nanoimprint adhesive 28 is filled into the master adhesive pattern 22 under the action of surface tension, or the master adhesive pattern 22 is embedded in the nanoimprint adhesive 28. After the nanoimprint adhesive 28 is ultraviolet-cured for a period of time, the master adhesive pattern 22 is separated from the nanoimprint adhesive 28, that is, a high-resolution and small-size master pattern structure 30 (that is, a nanoimprint pattern master) is formed on the nanoimprint adhesive 28. At this time, the gap width of the master pattern structure 30 is a2′=a2-2b2.

[0070] Embodiment 3

[0071] Please refer to Figure 5As shown, the present application provides a method for preparing a high-resolution graphic, comprising the following steps:

[0072] Q100: providing a first substrate 10, and disposing a mask 12 having a first graphic structure 14 on the first substrate 10;

[0073] Q200: using a deep silicon etching process to form a second graphic structure 16 on the first substrate 10 through the first graphic structure 14, and removing the mask 12;

[0074] Q300: thermally oxidizing the surface of the first substrate 10 to form an oxide layer 34, wherein the oxide layer 34 covers the inner wall of the second graphic structure 16;

[0075] Q400: removing the oxide layer 34 to obtain a third nanoimprint master 36;

[0076] Q500: Filling the pattern gap of the third nanoimprint master 36 with master glue, so that the master glue is patterned into a master glue pattern 22, and the master glue pattern 22 is combined and transferred out through the soft film 24;

[0077] Q600: Provide a second substrate 26 and coat a nanoimprint adhesive 28 on the second substrate 26 , press the master adhesive pattern 22 onto the nanoimprint adhesive 28 , perform UV curing on the nanoimprint adhesive 28 , separate the master adhesive pattern 22 , and form a master pattern structure 30 on the nanoimprint adhesive 28 .

[0078] Preferably, in step Q400, the oxide layer 34 is removed by a buffered oxide etching solution or a dilute hydrofluoric acid solution.

[0079] More specifically, if Figure 2 As shown, the specific technical solutions include:

[0080] A first substrate 10 is provided, and the first substrate 10 is made of silicon, for example. A mask 12 having a first graphic structure 14 is arranged on the first substrate 10, wherein the first graphic structure 14 is, for example, a hollow structure that is arranged through the mask 12. The mask 12 is, for example, a photolithography mask, and electron beam photoresist can be used. The electron beam photoresist can be selected to be positive or negative. The positive resist is, for example, PMMA (polymethyl methacrylate), ZEP-520A (a modified resist with a benzene ring added to PMMA, composed of a copolymer of α-chloromethylacrylate and α-methylstyrene), or AR-P 6200 (SCAR62), and the negative resist is, for example, HSQ (whose component is an inorganic compound based on silicon dioxide, composed of a hydrogen silicate resin in a methyl isobutyl ketone solvent). In this embodiment, the mask 12 uses a positive resist.

[0081] A second graphic structure 16 is formed on the first substrate 10 through the first graphic structure 14 by a deep silicon etching process. The second graphic structure 16 is, for example, a groove structure. A nanoimprint master pattern with a high aspect ratio is obtained after deep silicon etching. At this time, the gap width of the pattern is a3. Then, the mask 12 is removed by a dry treatment method such as oxygen plasma or argon plasma.

[0082] The space of the nano-imprint pattern is reduced by increasing the pattern gap of the second pattern structure 16, for example, by consuming the surface layer of the first substrate 10 by thermal oxidation to generate an oxide layer 34, and then removing the oxide layer 34. Specifically, the entire surface of the first substrate 10 is thermally oxidized to form an oxide layer 34, and the oxide layer 34 covers the inner wall of the second pattern structure 16, wherein the thickness of the oxide layer 34 is X, and the value range of the thickness X of the oxide layer 34 is 10A to 1000A, the surface thickness of the first substrate 10 consumed to form the oxide layer 34 is 0.44X, and the corresponding value range of the surface thickness 0.44X of the consumed first substrate 10 is 4.4A to 440A, wherein A is the thickness unit angstrom, and therefore, the thickness b3 of the sidewall thinning of the second pattern structure 16 is 0.44X.

[0083] The oxide layer 34 is removed by a wet solution such as a buffered oxide etchant or a dilute hydrofluoric acid solution to obtain a third nanoimprint master 36. In the process of removing the oxide layer 34, the side wall surface layer of the second graphic structure 16 is removed, thereby increasing the gap width of the second graphic structure 16, thereby achieving the purpose of increasing the graphic size of the third nanoimprint master 36 and having a higher resolution. The graphic gap width of the third nanoimprint master 36 is a3+2b3.

[0084] The master pattern is transferred. Specifically, the third nanoimprint master 36 can be treated with anti-sticking first, and then the master glue is filled in the pattern gap of the third nanoimprint master 36. For example, the filling can be performed by spin coating, so that the master glue is patterned into a master glue pattern 22. The anti-sticking treatment can reduce the adhesion between the master glue and the third nanoimprint master 36 to facilitate the subsequent transfer of the master glue; the master glue pattern 22 is combined and transferred out through the soft film 24. The soft film 24 can use flexible transparent materials such as PET (polyethylene terephthalate) to facilitate UV curing treatment in the subsequent nanoimprint process.

[0085] A second substrate 26 is provided and a nanoimprint adhesive 28 is coated on the second substrate 26. The second substrate 26 is made of a transparent material, such as quartz glass or SiC wafer, and the nanoimprint adhesive 28 can be coated on the second substrate 26 by spin coating. The side of the soft film 24 where the master adhesive pattern 22 is provided is pressed onto the side of the second substrate 26 where the nanoimprint adhesive 28 is provided, and the soft film 24 is in close contact with the second substrate 26. The nanoimprint adhesive 28 is uniformly pressed so that the nanoimprint adhesive 28 is filled into the master adhesive pattern 22 under the action of surface tension, or the master adhesive pattern 22 is embedded in the nanoimprint adhesive 28. After the nanoimprint adhesive 28 is ultraviolet-cured for a period of time, the master adhesive pattern 22 is separated from the nanoimprint adhesive 28, that is, a high-resolution and small-size master pattern structure 30 (that is, a nanoimprint pattern master) is formed on the nanoimprint adhesive 28. At this time, the gap width of the master pattern structure 30 is a3′=a3+2b3.

[0086] In addition, the present application also provides a nanoimprint pattern master, which is manufactured using the high-resolution pattern preparation method as described above.

[0087] The present application provides a method for controlling the size of nanoimprint patterns. Specifically, in Example 1 and Example 2, a small-sized nanoimprint pattern is obtained by reducing the pattern gap after depositing a passivation layer; in Example 3, the pattern gap is increased by thermal oxidation and then removed to reduce the space of the nanoimprint pattern; it should also be understood that in other embodiments, step Q400 can also be removed in Example 3, that is, the oxide layer formed after thermal oxidation is not removed, and the pattern gap can be reduced to obtain a small-sized nanoimprint pattern, or, in Example 1 and Example 2, the passivation layer is implemented as an oxide layer. The present application achieves the reduction or enlargement of the size of the master pattern by pre-treating the substrate, that is, depositing a thin film on the surface of the substrate and controlling the film thickness and step coverage ability. Small-sized pattern transfer can be successfully achieved through the nanoimprint process; high-resolution small-sized patterns can be further obtained by optimizing the mask pattern design.

[0088] In summary, the present application provides a method for preparing high-resolution graphics and nanoimprint graphics. The preparation method utilizes the high selectivity and directionality of deep silicon etching technology and the high step coverage of thin film deposition technology, and reduces the size of the graphics by depositing thin films in the gaps between the graphics. Thus, nanoimprint graphics with higher resolution and smaller size can be obtained without increasing the resolution of electron beam lithography itself. At the same time, the parameters of etching and thin film deposition can be modified to control the different morphologies of the nanoimprint master and reduce or enlarge the size of the master graphics, thereby obtaining nanoimprint graphics with different characteristic sizes. In addition, the preparation method of the present application obtains nanoimprint graphics with adjustable size without changing the mask, that is, only one mask is needed, which greatly simplifies the process and reduces costs.

[0089] The concepts described herein may be implemented in other forms without departing from their spirit and characteristics. The specific embodiments disclosed should be considered illustrative rather than restrictive. Therefore, the scope of this application is determined by the appended claims rather than by the preceding description. Any changes within the literal meaning and equivalent scope of the claims should fall within the scope of these claims.

Claims

1. A method for preparing high-resolution graphics, characterized in that: The following steps are involved: S100: providing a first substrate (10), and arranging a mask (12) having a first pattern structure (14) on the first substrate (10); S200: using a deep silicon etching process to obtain a second graphic structure (16) on the first substrate (10) through the first graphic structure (14), and removing the mask (12); S300: depositing a passivation layer (18) on the side of the first substrate (10) where the second graphic structure (16) is located, so that the passivation layer (18) covers the inner wall of the second graphic structure (16) and the surface of the first substrate (10), thereby obtaining a first nanoimprint master (20); S400: filling the pattern gap of the first nanoimprint master (20) with a master glue so that the master glue is patterned into a master glue pattern (22), and transferring the master glue pattern (22) through a soft film (24); S5 00: A second substrate (26) is provided and a nanoimprint adhesive (28) is coated on the second substrate (26), the master adhesive pattern (22) is pressed onto the nanoimprint adhesive (28), the nanoimprint adhesive (28) is subjected to ultraviolet curing treatment, and the master adhesive pattern (22) is separated, so as to form a master pattern structure (30) on the nanoimprint adhesive (28).

2. The method for preparing high-resolution graphics according to claim 1, characterized in that: The passivation layer (18) is made of silicon dioxide or silicon nitride.

3. The method for preparing high-resolution graphics according to claim 1, characterized in that: The deposition method of the passivation layer (18) includes low pressure chemical vapor deposition, thermal oxidation, atomic layer deposition or plasma enhanced chemical vapor deposition.

4. The method for preparing high-resolution graphics according to claim 1, characterized in that: The soft film (24) is made of a flexible and transparent material.

5. A method for preparing high-resolution graphics, characterized in that: The following steps are involved: H100: providing a first substrate (10), and arranging a mask (12) having a first graphic structure (14) on the first substrate (10); H200: using a deep silicon etching process to obtain a second graphic structure (16) on the first substrate (10) through the first graphic structure (14), and removing the mask (12); H300: depositing a passivation layer (18) on the side of the first substrate (10) where the second graphic structure (16) is located, so that the passivation layer (18) covers the inner wall of the second graphic structure (16) and the surface of the first substrate (10); H400: removing the portion of the passivation layer (18) located on the surface of the first substrate (10) and the portion of the bottom wall of the second graphic structure (16) to obtain a second nanoimprint master (32); H500: filling the pattern gap of the second nanoimprint master (32) with a master glue so that the master glue is patterned into a master glue pattern (22), and transferring the master glue pattern (22) through a soft film (24); H600: A second substrate (26) is provided and a nanoimprint adhesive (28) is coated on the second substrate (26), the master adhesive pattern (22) is pressed onto the nanoimprint adhesive (28), the nanoimprint adhesive (28) is subjected to ultraviolet curing treatment, and the master adhesive pattern (22) is separated, so as to form a master pattern structure (30) on the nanoimprint adhesive (28).

6. The method for preparing high-resolution graphics according to claim 5, characterized in that: The step H400 also includes: removing the portion of the passivation layer (18) located on the surface of the first substrate (10) and the portion of the bottom wall of the second graphic structure (16) by reactive ion etching, and thinning the passivation layer (18) on the side wall of the second graphic structure (16) by partial isotropic etching.

7. A method for preparing high-resolution graphics, characterized in that: The following steps are involved: Q100: providing a first substrate (10), and arranging a mask (12) having a first graphic structure (14) on the first substrate (10); Q200: using a deep silicon etching process to obtain a second graphic structure (16) on the first substrate (10) through the first graphic structure (14), and removing the mask (12); Q300: thermally oxidizing the surface of the first substrate (10) to form an oxide layer (34), wherein the oxide layer (34) covers the inner wall of the second graphic structure (16); Q400: removing the oxide layer (34) to obtain a third nanoimprint master (36); Q500: Filling the pattern gap of the third nanoimprint master (36) with a master glue so that the master glue is patterned into a master glue pattern (22), and transferring the master glue pattern (22) through a soft film (24); Q600: Provide a second substrate (26) and coat a nanoimprint adhesive (28) on the second substrate (26), press the master adhesive pattern (22) onto the nanoimprint adhesive (28), perform ultraviolet curing treatment on the nanoimprint adhesive (28), separate the master adhesive pattern (22), and form a master pattern structure (30) on the nanoimprint adhesive (28).

8. The method for preparing high-resolution graphics according to claim 7, characterized in that: In the step Q400, the oxide layer (34) is removed by using a buffered oxide etching solution or a dilute hydrofluoric acid solution.

9. The method for preparing high-resolution graphics according to claim 7, characterized in that: The thickness of the oxide layer (34) is X, and the thickness of the first substrate (10) consumed by thermal oxidation is 0.44X.

10. A nanoimprint pattern master, characterized in that: The nanoimprint pattern master is manufactured by the method for preparing high-resolution patterns according to any one of claims 1 to 9.

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