Method for producing optoelectronic component and optoelectronic component
By structuring the cover on the electrical contact surface of the optoelectronic device and constructing the wavelength conversion element using the injection method, the problems of damage to the electrical contact surface and obstructed heat conduction in the prior art are solved, and effective protection and performance improvement of the optoelectronic device are achieved.
Patent Information
- Application Number
- CN202380040909.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2022-05-17
- Filing Date
- 2023-04-25
- Publication Date
- 2025-01-07
AI Technical Summary
The existing optoelectronic device manufacturing methods tend to damage the electrical contact surface when structuring wavelength conversion elements, and the thermal conduction is hindered, affecting device performance.
The cover is constructed on the electrical contact surface, which is limited to the electrical contact surface and does not cover other sections. The cover is constructed by a quantitative dosing method to protect the electrical contact surface, and an injection method is used when structuring the wavelength conversion element to reduce the risk of particle damage .
Effectively protect the electrical contact surface, reduce the risk of damage, ensure that heat conduction is not hindered, and improve the performance and reliability of optoelectronic devices.
Smart Images
Figure CN119278674A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a method for producing an optoelectronic component and an optoelectronic component.
[0002] This patent application claims the priority of German patent application DE 102022112355.3, the disclosure content of which is hereby incorporated by reference. Background Art
[0003] It is known to equip optoelectronic components with wavelength conversion elements. One known production method consists in spraying a wavelength conversion material onto the top side of an optoelectronic semiconductor chip. Summary of the invention
[0004] The object of the present invention is to specify a method for producing an optoelectronic component. Another object of the present invention is to provide an optoelectronic component. These objects are achieved by a method for producing an optoelectronic component and an optoelectronic component having the features of the independent claims. Different improvements are described in the dependent claims.
[0005] The method for producing an optoelectronic component comprises a step for providing an optoelectronic semiconductor chip having an electrical contact surface arranged at the top, a step for forming a cover on the electrical contact surface, wherein the cover is limited to the electrical contact surface and does not cover other sections of the top of the optoelectronic semiconductor chip, and a step for forming a wavelength conversion element at the top of the optoelectronic semiconductor chip. In this case, the cover is at least partially covered by the wavelength conversion element.
[0006] The advantage of the method is that the covering body formed on the electrical contact surface can protect the electrical contact surface from damage during the formation of the wavelength conversion element. If the covering body is limited to the electrical contact surface, it advantageously does not hinder or only hinders to a small extent the heat conduction from the wavelength conversion element to the optoelectronic semiconductor chip.
[0007] In one embodiment of the method, a further step for connecting the bonding wire to the electrical contact surface is performed before the cover is constructed. Here, the bonding wire is partially embedded in the cover. By connecting the bonding wire to the electrical contact surface before the cover is constructed, the cover advantageously does not interfere with the production of the connection between the bonding wire and the electrical contact surface.
[0008] In one embodiment of the method, the covering body is formed by a dosing method, in particular by needle dosing or by contactless needle dosing. Advantageously, this allows the covering body to be formed with a well-controlled position and size. In addition, the method advantageously allows the covering body to be produced without damaging the bonding wires connected to the electrical contact surfaces during the process.
[0009] In one embodiment of the method, the material of the covering body completely wets the electrical contact surface. This can be achieved, for example, by targeted pretreatment of the surface of the electrical contact surface. Advantageously, the method thus enables particularly precise management of the shape and size of the covering body formed on the electrical contact surface.
[0010] In one embodiment of the method, the wavelength conversion element is formed by a spraying method. Advantageously, the cover previously formed on the electrical contact surface can reduce the risk of the electrical contact surface being damaged by particles accelerated in the direction of the electrical contact surface during the spraying method.
[0011] In one embodiment of the method, a further step for arranging the optoelectronic semiconductor chip at the upper side of the carrier is performed before forming the covering body. In this case, the optoelectronic semiconductor chip is arranged such that the upper side of the optoelectronic semiconductor chip faces away from the upper side of the carrier. The method additionally comprises a step for forming an embedding body at the upper side of the carrier. In this case, the side surfaces of the optoelectronic semiconductor chip are at least partially covered by the embedding body. Advantageously, the embedding body formed in the method can form part of a housing of an optoelectronic component obtainable by the method.
[0012] In one embodiment of the method, the cover and the embedding are constructed in a common working process. In this case, the cover and the embedding can be constructed, for example, from the same material. Advantageously, this enables a particularly simple, fast and cost-effective execution of the method.
[0013] In one embodiment of the method, the method has an additional step of forming an optical lens above the wavelength conversion element. The optical lens can be used to shape the beam of light emitted by the optoelectronic component.
[0014] The optoelectronic component comprises an optoelectronic semiconductor chip having an electrical contact surface arranged on the upper side. A cover body is arranged on the electrical contact surface, wherein the cover body is limited to the electrical contact surface and does not cover other sections of the upper side of the optoelectronic semiconductor chip. A wavelength conversion element is arranged on the upper side of the optoelectronic semiconductor chip. The cover body is at least partially covered by the wavelength conversion element.
[0015] Advantageously, the cover arranged on the electrical contact surface can be used to protect the electrical contact surface during the production of the wavelength conversion element. As a result, in the optoelectronic component there is advantageously only a small risk of damaging the electrical contact surface of the optoelectronic semiconductor chip. If the cover is limited to the electrical contact surface, the cover advantageously does not restrict, or only to a very small extent, the heat conduction from the wavelength conversion element to the optoelectronic semiconductor chip.
[0016] In one embodiment of the optoelectronic component, the electrical contact area is completely covered by the covering body. Advantageously, the covering body thus enables particularly comprehensive protection of the electrical contact area of the optoelectronic semiconductor chip.
[0017] In one embodiment of the optoelectronic component, the bonding wire is connected to the electrical contact surface. Here, the bonding wire is partially embedded in the cover body. Advantageously, the cover body does not damage the connection between the bonding wire and the electrical contact surface.
[0018] In one embodiment of the optoelectronic component, the cover comprises silicone. Advantageously, such a cover can ensure very effective protection of the electrical contact areas.
[0019] In one embodiment of the optoelectronic component, the covering body has embedded particles, in particular particles of TiO 2 or ZrO 2. Advantageously, the covering body has high reflectivity in this case, whereby the top side of the optoelectronic semiconductor chip of the optoelectronic component has a higher reflectivity than if the covering body were not present.
[0020] In one embodiment of the optoelectronic component, the side surfaces of the optoelectronic semiconductor chip are at least partially covered by the embedding body. The embedding body can, for example, form a part of the housing of the optoelectronic component or even form the complete housing of the optoelectronic component.
[0021] In one embodiment of the optoelectronic component, an optical lens is arranged above the wavelength conversion element. The optical lens can be used to shape the beam of light radiated by the optoelectronic component. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] The nature, features and advantages of the present invention described above and the manner in which they are achieved can be more clearly understood in conjunction with the following description of the embodiments, which will be explained in more detail in conjunction with the accompanying drawings.
[0023] Figure 1 shows a sectional side view of an optoelectronic semiconductor chip having an electrical contact area arranged on a carrier;
[0024] Figure 2 An optoelectronic semiconductor chip is shown after being connected with a bonding wire;
[0025] Figure 3 The optoelectronic semiconductor chip and the carrier are shown after the embedding body has been formed;
[0026] Figure 4 The optoelectronic semiconductor chip is shown after a cover has been formed on the electrical contact surface;
[0027] Figure 5 shows a plan view of the upper side of an optoelectronic semiconductor chip;
[0028] Figure 6 shows an optoelectronic semiconductor chip after the formation of a wavelength conversion element; and
[0029] Figure 7 The optoelectronic component formed by the assembly is shown in a sectional side view after the optical lens has been formed. DETAILED DESCRIPTION
[0030] Figure 1 The optoelectronic semiconductor chip 200 is shown in a schematic sectional side view. The optoelectronic semiconductor chip 200 has a top side 201 and a bottom side 202 opposite the top side 201 . Side surfaces 203 of the optoelectronic semiconductor chip 200 are oriented substantially perpendicularly to the top side 201 and the bottom side 202 .
[0031] The optoelectronic semiconductor chip 200 is designed to emit electromagnetic radiation (light). The optoelectronic semiconductor chip 200 may be designed, for example, to emit light having a wavelength from the blue or ultraviolet spectral range.
[0032] The optoelectronic semiconductor chip 200 can be designed, for example, as a diode chip (LED chip). The optoelectronic semiconductor chip 200 can be designed, for example, as a surface-emitting diode chip. In this case, light is emitted primarily at the top 201 of the optoelectronic semiconductor chip 200 .
[0033] However, the optoelectronic semiconductor chip 200 can also be embodied as a body-emitting diode chip. In this case, electromagnetic radiation is emitted both at the top 201 and at the side surfaces 203 and, in some variants, also at the bottom 202 .
[0034] exist Figure 1 In the example shown in , the optoelectronic semiconductor chip 200 is arranged on the upper side 101 of the carrier 100. The carrier 100 can also be referred to as a substrate. The carrier 100 can be a temporary carrier, which is detached from the optoelectronic semiconductor chip 200 again in a subsequent processing step. However, the optoelectronic semiconductor chip 200 can also remain permanently on the carrier 100. In this case, the carrier 100 can be designed, for example, as a circuit board, a lead frame, a plastic carrier, a metal-structured ceramic substrate or a carrier made of a semiconductor material. Figure 1 In the example shown in , the carrier 100 has a bottom side 102 which is opposite the top side 101 .
[0035] The optoelectronic semiconductor chip 200 is arranged on the upper side 101 of the carrier 100 such that the upper side 201 of the optoelectronic semiconductor chip 200 faces away from the upper side 101 of the carrier 100 . The lower side 202 of the optoelectronic semiconductor chip 200 faces the upper side 101 of the carrier 100 .
[0036] The optoelectronic semiconductor chip 200 has an electrical contact area 210 on its top side 201. The electrical contact area 210 can also be referred to as a bonding pad. Voltage and current can be applied to the optoelectronic semiconductor chip 200 via the electrical contact area 210, whereby the optoelectronic semiconductor chip 200 emits electromagnetic radiation.
[0037] A further electrical contact area of the optoelectronic semiconductor chip 200 may be formed as an underside 202 of the optoelectronic semiconductor chip 200. If the optoelectronic semiconductor chip 200 remains permanently on the carrier 100, the electrical contact area 210 may be electrically conductively connected at the underside 202 of the optoelectronic semiconductor chip 200 to a mating contact area at the top side 101 of the carrier 100, for example by means of a solder connection or an electrically conductive adhesive connection.
[0038] Figure 2 The carrier 100 and the optoelectronic semiconductor chip 200 are shown following each other in time. Figure 1 Schematic sectional side view of the illustrated processing state.
[0039] The bonding wire 230 is connected to the electrical contact area 210 at the top 201 of the optoelectronic semiconductor chip 200. The bonding wire 230 establishes the electrical contact area 210 with the top 201 of the optoelectronic semiconductor chip 200. Figure 2 The mating contact surfaces may be arranged, for example, at the top 101 of the carrier 100 .
[0040] Figure 3 The optoelectronic semiconductor chip 200 and the carrier 100 are shown following each other in time. Figure 2 Schematic sectional side view of the illustrated processing state.
[0041] An inlay 300 is formed on the top 101 of the carrier 100. For this purpose, the material forming the inlay 300 is arranged on the top 101 of the carrier 100, for example by means of a dosing method, for example by needle dosing (dispensing) or by contactless needle dosing (jetting). The inlay 300 formed in this way at least partially covers the side surface 203 of the optoelectronic semiconductor chip 200.
[0042] The material of the embedding body 300 can include silicone, for example. In addition, the material of the embedding body 300 can include reflective particles, for example particles of TiO 2 or ZrO 2 .
[0043] The construction of the insert 300 may be omitted.
[0044] Figure 4 The carrier 100 , the optoelectronic semiconductor chip 200 , the bonding wire 230 and the embedding body 300 are shown following each other in time. Figure 3Schematic sectional side view of the illustrated processing state.
[0045] The cover 400 is formed on the electrical contact area 210 at the top 201 of the optoelectronic semiconductor chip 200. For this purpose, the material of the cover 400 is arranged on the electrical contact area 210, for example by means of a dosing method, for example by needle dosing (dispensing) or by contactless needle dosing (jetting).
[0046] The material of the covering body 400 can include silicone, for example. The material of the covering body 400 can also include embedded particles, in particular particles of TiO 2 .
[0047] The construction of the cover body 400 can be carried out in a common working process with the construction of the insert body 300. In this case, the insert body 300 and the cover body 400 can be made of the same material. However, it is also possible to construct the insert body 300 and the cover body 400 in separate working processes.
[0048] During the formation of the cover 400 on the electrical contact surface 210 , the bonding wire 230 connected to the electrical contact surface 210 is already embedded in places in the cover 400 .
[0049] Figure 5 Shown in Figure 4 2 shows a plan view of the top side 201 of the optoelectronic semiconductor chip 200 in the processed state.
[0050] In the example shown, the electrical contact area 210 on the top 201 of the optoelectronic semiconductor chip 200 has a metallization region 220 and a passivation region 225 surrounding the metallization region 220. A bonding wire 230 is connected to the metallization region 220. The section of the bonding wire 230 connected to the metallization region 220 is embedded in the cover 400.
[0051] It is expedient for the cover 400 arranged on the electrical contact area 210 to completely cover the electrical contact area 210. In this case, the cover 400 covers both the metallization region 220 and the passivation region 225. However, it is also possible that the cover 400 does not completely cover the electrical contact area 210. The cover 400 is limited to the electrical contact area 210 and does not cover other sections of the top 201 of the optoelectronic semiconductor chip 200.
[0052] The substantially complete covering of the electrical contact areas 210 by the cover 400 and the limitation of the cover 400 to the electrical contact areas 210 can be achieved, for example, by selecting the wetting properties of the electrical contact areas 210, the remaining sections of the upper side 201 of the optoelectronic semiconductor chip 200 and the material of the cover 400 in such a way that the material of the cover 400 completely wets the electrical contact areas 210 but does not wet the remaining sections of the upper side 201 of the optoelectronic semiconductor chip 200. In this case, the material of the cover 400 can be added during the formation of the cover 400, for example by means of a dosing method, starting from the edge region of the upper side 201 of the optoelectronic semiconductor chip 200 or from the upper side of the embedding body 300 adjacent to the side surface 203 of the optoelectronic semiconductor chip 200, and then wets the electrical contact areas 210 in the desired manner.
[0053] The cover 400 can also be designed such that it covers only the metallization region 220 of the electrical contact area 210 , but not the passivation region 225 . It is also possible that the electrical contact area 210 is not divided into the metallization region 220 and the surrounding passivation region 225 .
[0054] Figure 6 Shown also Figure 4 The components shown in the Figure 4 Schematic sectional side view of the illustrated processing state.
[0055] from Figure 4 and Figure 5 Based on the processing state shown in , the wavelength conversion element 500 is already formed on the top side 201 of the optoelectronic semiconductor chip 200 . In this case, the cover body 400 is already at least partially covered by the wavelength conversion element 500 . Figure 6 In the example shown in , the cover body 400 is already completely covered by the wavelength conversion element 500 . Sections of the bonding wires 230 are embedded in the wavelength conversion element 500 .
[0056] The wavelength conversion element 500 comprises a matrix material and wavelength conversion particles embedded in the matrix material. The matrix material may comprise silicone, for example.
[0057] The wavelength conversion element 500 is provided for at least partially converting light radiated from the optoelectronic semiconductor chip 200 into light of another wavelength. For example, the wavelength conversion element 500 may be designed for converting light emitted from the optoelectronic semiconductor chip 200 having a blue or ultraviolet light color into white light.
[0058] The formation of the wavelength conversion element 500 can be carried out, for example, by a spraying method. In this case, the material of the wavelength conversion element 500 is sprayed onto the upper side 201 of the optoelectronic semiconductor chip 200. In this case, the wavelength conversion particles contained in the material of the wavelength conversion element 500 can hit the upper side 201 of the optoelectronic semiconductor chip 200 at a high speed and hit the cover 400. In this case, the cover 400 has prevented the electrical contact area 210 of the optoelectronic semiconductor chip 200 from being damaged by the impinging particles.
[0059] Figure 7 A schematic cross-sectional side view of a portion of an optoelectronic component 10 is shown, which has been further processed in Figure 6 The components shown in FIG.
[0060] from Figure 6 Starting from the processing state shown in , the optical lens 600 is already formed above the wavelength conversion element 500. The optical lens 600 can be formed, for example, by a shaping method (molding method), for example by compression molding. The optical lens 600 can include silicone, for example.
[0061] The optical lens 600 is provided for shaping (for example converging or scattering) the light emitted from the optoelectronic semiconductor chip 200 and converted by the wavelength conversion element 500. In the example shown, the optical lens 600 is designed as a converging lens.
[0062] In an alternative variant of the optoelectronic component 10 , the optical lens 600 may be omitted.
[0063] The present invention has been explained and described in more detail according to the preferred embodiments. However, the present invention is not limited to the disclosed examples. Other variations can be derived by those skilled in the art.
[0064] Reference numerals list
[0065] 10Optoelectronic devices
[0066] 100 vectors
[0067] 101 upper side
[0068] 102 lower side
[0069] 200 optoelectronic semiconductor chips
[0070] 201 upper side
[0071] 202 lower side
[0072] 203 side
[0073] 210 electrical contact surface
[0074] 220 metallized area
[0075] 225 passivation area
[0076] 230 bonding wire
[0077] 300 Embedded
[0078] 400 Covering Body
[0079] 500 wavelength conversion elements
[0080] 600 optical lens.
Claims
1. A method for manufacturing an optoelectronic device (10), comprising the following steps: - providing an optoelectronic semiconductor chip (200) having an electrical contact area (210) arranged on the top side (201); - forming a covering body (400) on the electrical contact surface (210), wherein the covering body (400) is limited to the electrical contact surface (210) and does not cover any other section of the top side (201) of the optoelectronic semiconductor chip (200); - forming a wavelength conversion element (500) on the upper side (201) of the optoelectronic semiconductor chip (200), The covering body (400) is at least partially covered by the wavelength conversion element (500).
2. The method according to claim 1, The following steps are performed before constructing the covering body (400): - connecting a bonding wire (230) to the electrical contact surface (210); The joining wire (230) is partially embedded in the covering body (400).
3. The method according to any one of the preceding claims, The covering body (400) is formed by a dosing method, in particular by needle dosing or by contactless needle dosing.
4. The method according to claim 3, The material of the covering body (400) completely wets the electrical contact surface (210).
5. The method according to any one of the preceding claims, The wavelength conversion element (500) is constructed by a spraying method.
6. The method according to any one of the preceding claims, The following steps are performed before constructing the covering body (400): - arranging the optoelectronic semiconductor chip (200) on the upper side (101) of the carrier (100) such that the upper side (201) of the optoelectronic semiconductor chip (200) faces away from the upper side (101) of the carrier (100), The method further comprises the following steps: - forming an embedding body (300) on the top side (101) of the carrier (100), wherein a side surface (203) of the optoelectronic semiconductor chip (200) is at least partially covered by the embedding body (300).
7. The method according to claim 6, The covering body (400) and the insert body (300) are formed in a common working process.
8. The method according to any one of the preceding claims, The method further comprises the following steps: - constructing an optical lens (600) above the wavelength conversion element (500).
9. An optoelectronic component (10) comprising an optoelectronic semiconductor chip (200) having an electrical contact area (210) arranged on a top side (201), wherein a cover (400) is arranged on the electrical contact area (210), wherein the cover (400) is limited to the electrical contact area (210) and does not cover any other section of the top side (201) of the optoelectronic semiconductor chip (200), wherein a wavelength conversion element (500) is arranged on the upper side (201) of the optoelectronic semiconductor chip (200), The covering body (400) is at least partially covered by the wavelength conversion element (500).
10. The optoelectronic component (10) according to claim 9, wherein the electrical contact area (210) is completely covered by the covering body (400).
11. The optoelectronic device (10) according to any one of claims 9 and 10, wherein a bonding wire (230) is connected to the electrical contact surface; The joining wire (230) is partially embedded in the covering body (400).
12. The optoelectronic device (10) according to any one of claims 9 to 11, The covering body (400) comprises silicone.
13. The optoelectronic device (10) according to any one of claims 9 to 12, The covering body (400) comprises embedded particles, in particular particles of TiO2 or ZrO2.
14. The optoelectronic device (10) according to any one of claims 9 to 13, The side surfaces (203) of the optoelectronic semiconductor chip (200) are at least partially covered by the embedding body (300).
15. The optoelectronic device (10) according to any one of claims 9 to 14, An optical lens (600) is arranged above the wavelength conversion element (500).