Scanning magnetron device for PVD (Physical Vapor Deposition) rectangular plane target and thin film deposition equipment

Abstract

The invention relates to the technical field of vacuum deposition, and discloses a scanning magnetron device and thin film deposition equipment for a PVD (Physical Vapor Deposition) rectangular plane target. The driving device is used for driving the magnetron to move along the first direction and the second direction relative to the rectangular plane target, so that the magnetron reaches the limit position corresponding to each corner part of the rectangular plane target, and the moving stroke of the magnetron comprises a first stroke and a second stroke which are carried out in sequence, the magnetron moves between a first limit position and a second limit position in the first stroke, the magnetron moves between the first limit position and a third limit position or between the second limit position and the third limit position in the second stroke, and the first limit position, the second limit position and the third limit position are different limit positions. According to the embodiment of the invention, the reaching limit position of the magnetron after completing the second stroke is different from the starting or reaching limit position of the magnetron in the first stroke, so that the etching uniformity can be improved.

Description

Technical Field

[0001] The invention relates to the field of vacuum deposition technology, and in particular to a scanning magnetron device and thin film deposition equipment for a PVD rectangular plane target. Background Art

[0002] Since the birth of magnetron sputtering coating technology, the main issues of magnetron sputtering that have been concerned are: target utilization, deposition efficiency, film uniformity, film density, stability during the coating process, and meeting various complex film deposition requirements. For planar target magnetron sputtering, due to the effect of the orthogonal electromagnetic field on the sputtering ions, the ions and electrons are confined in the closed magnetic lines of force, causing the sputtering target to produce uneven etching during sputtering. Once the target material is etched through, the target material is scrapped, which results in the target material utilization rate being low, generally below 40%. The target material is the basic consumable in the magnetron sputtering process. Not only is the usage large, but the target material utilization rate also plays a vital role in the process and production cycle. Although the target material can be recycled and reused, the target material utilization rate still has a great impact on product cost control and improving product competitiveness. Therefore, it is inevitable to find ways to improve the target material utilization rate, and many manufacturers have also made many improvement measures.

[0003] The uneven etching of the PVD target surface, that is, the depth distribution of the grooves, and the resulting low target utilization rate are caused by the specific design and movement trajectory of the magnetron. The first inventor of the present invention, Yang, and other inventors have made a detailed description in US Pat. 7,186,319 on how to improve the target utilization rate of the planar circular target by optimizing the design of the rotating planar magnetron. Circular targets are commonly used in the PVD coating process of 6, 8 and 12 inch wafers.

[0004] Over the past two decades, magnetron sputtering of rectangular targets has been developed for the manufacture of flat panel displays, such as computer monitors and television screens. Magnetron sputtering is the method of choice for making the conductive layers of displays by depositing aluminum, molybdenum, and transparent conductors such as indium tin oxide (ITO) onto large, rectangular panels of glass or polymer. The resulting panels may contain thin-film transistors, plasma displays, field emitters, liquid crystal display (LCD) elements, or organic light-emitting diodes (OLEDs). Similar techniques can be used to coat optical thin film layers for window glass. The main difference between magnetron sputtering of rectangular targets and the long-established and more mature wafer magnetron sputtering technology is the large size and rectangular shape of the former, while the latter is a relatively smaller, round target.

[0005] Demaray et al. describe a flat sputtering device 20 in U.S. Pat. No. US Pat. 5565071A, such asFigure 1 As shown, the thin film deposition chamber mainly includes: a vacuum chamber 22; a rectangular sputtering base 24, which is usually electrically grounded; a rectangular glass panel or other substrate 26 supported by the base 24; and a rectangular sputtering rectangular planar target 28, which is parallel to the substrate 26. The material of the rectangular planar target 28 is the metal to be sputtered and deposited on the substrate. The rectangular planar target 28 is vacuum-sealed to the chamber 22 through a first insulating plate 30.

[0006] The rectangular planar target 28 to be sputtered is usually bonded to a backing plate 32 on which cooling water channels are formed to cool the rectangular planar target 28. The ions that bombard the target material to produce sputtering come from a gas, usually argon, added to the vacuum chamber 22. Advantageously, the back chamber 34 is vacuum-sealed to the back of the planar target backing plate 32 via a second insulating plate 36 and evacuated to a low pressure by a mechanical vacuum pump, thereby substantially eliminating the pressure difference across the large-area rectangular planar target 28 and its backing plate 32, as well as the large deformation that may be caused by the large pressure difference. Therefore, the large-area rectangular planar target 28 and its backing plate 32 can be made thinner.

[0007] The DC power supply applies a negative voltage to the rectangular planar target 28, i.e., the cathode. Note that the negative voltage here is relative to the base electrode, i.e., the base 24 or other electrically grounded components of the chamber such as a mask. An electric field is generated in the PVD vacuum chamber 22 to accelerate Ar ions to sputter the target material and generate electrons from the target material, which are used to generate and maintain plasma 38 near the surface of the target material. Positive argon ions are attracted to the rectangular planar target 28 to which the negative voltage is applied and bombard the rectangular planar target 28, and a portion of the sputtered metal atoms are deposited on the substrate 26, and a thin film layer containing at least a portion of the material components of the target material is generated thereon. Metal oxides or nitrides can be deposited in a process called "reactive magnetron sputtering" by additionally supplying oxygen or nitrogen to the vacuum chamber 22 during metal magnetron sputtering.

[0008] In order to increase the sputtering rate, a racetrack magnetron 40, such as Figure 2 As shown, it is conventionally placed on the back of the planar target backing plate 32. It has a middle magnetic pole 42 in the middle position, surrounded by an outer magnetic pole 44 with opposite magnetic polarity, to generate a magnetic field near the etching surface of the rectangular planar target 28 in the chamber. The middle magnetic pole 42 and the outer magnetic pole 44 are separated by a substantially constant magnetic pole gap 46, and the gap corresponds to the high-density closed-loop plasma 38 generated on the surface of the rectangular planar target 28. The outer magnetic pole 44 is composed of two straight sections 48 and two semicircular sections 50.

[0009] The racetrack magnetron 40 applies an external magnetic field to capture electrons and confine the plasma near the target, thereby increasing the density of the plasma and thus increasing the sputtering rate of the rectangular planar target 28. The closed shape of the magnetic field distributed along a single closed track creates a closed plasma loop generally formed along the magnetic pole gap 46 and effectively prevents the plasma from leaking out from the ends on both sides. It should also be noted that the size of the racetrack magnetron 40 is relatively small relative to the size of the rectangular planar target 28, and the racetrack magnetron 40 needs to scan back and forth behind the rectangular planar target 28 to achieve full-area etching of the target surface.

[0010] Halsey et al. disclosed in US Pat. 5,855,744 a structure and method for magnetron sputtering, which improves the thickness control and film thickness uniformity of deposited films by adjusting the distance between a magnetron or a portion of a magnetron and a sputtering target. When sputtering a rectangular substrate, the magnetron assembly scans the magnetron assembly back and forth, and the shim guide, the profile guide, the cam plate and the cam plate control follower are used to achieve the improvement of film thickness uniformity or film thickness control under the influence of magnetic field anomalies caused by magnetron scanning.

[0011] De Bosscher et al. describe coupled two-dimensional scanning of a racetrack magnetron in US Pat. 6322670 and US Pat. 6416630. The magnetron described by De Bosscher et al. was originally developed for rectangular panels with dimensions of approximately 400 mm x 600 mm. However, for economic reasons of mass production and to provide larger display screens, the size of the panels has increased over the years, and the size of the targets has also increased accordingly.

[0012] In one approach to accommodate larger area targets, Figure 2 The racetrack-shaped magnetron 40 is replicated up to 9 times in the first direction along the scanning direction to cover most of the target area, refer to US Pat. 5458759 of Hosokawa et al., but this solution still needs to average the distribution of the magnetic field through scanning.

[0013] Tepman discloses various magnetrons with a curly plasma loop in US patent application US2006 / 0049040 A1, in particular magnetrons with a rectangular profile. The magnetron can be arranged in a serpentine shape, with parallel straight sections connected by curved sections, or in a rectangular spiral shape, with straight sections arranged in orthogonal directions. The plasma loop is formed between inner and outer magnetic poles, with the inner magnetic pole being formed in a curly shape and the magnetic polarity of the outer magnetic pole being opposite to that of the inner magnetic pole. Figure 3 and 4The schematic diagrams of the design of the serpentine magnetron 52, spiral magnetron 56 and the corresponding serpentine plasma closed loop 54 and spiral plasma closed loop 58 provided by Tepman. Tepman also provided various magnetron scanning schemes. However, using the magnetron and scanning scheme proposed by Tempman, it is still difficult to achieve uniform etching of a large area in the center of the target material, and it does not solve the problem of full-area etching of the four corners of the rectangular target material.

[0014] As can be seen from the above, in order to solve the problem of full etching of target material and uniform coating of substrate, the usual practice is to scan the target material with a magnetron. However, when the magnetron scans in a direction perpendicular to its length, the arc end of the magnetron will etch the plane target deeper than the straight part, resulting in a relatively deep etching groove at the edge of the target. In short, the design and scanning scheme of the existing magnetron are not well optimized, making it difficult to achieve full area etching of the target.

[0015] Chen Xiaotong proposed a solution in Chinese patent CN 111910162 A, which sets a processor and a primary magnetic field source outside the cavity. The processor is used to obtain the consumption information of the target material during magnetron sputtering. It should be noted that the consumption information of the target material is used to reflect the consumption of the target material during magnetron sputtering, such as the thickness data of each area of ​​the target material, and the power and duration of bombarding the target material. The processor can determine the compensation information for compensating the uneven magnetic field generated by the magnet according to the consumption information. The secondary magnetic field source is arranged relative to the magnet and electrically connected to the processor, and is used to generate a corresponding secondary magnetic field according to the compensation information to compensate for the uneven magnetic field generated by the magnet, so that the magnetic field intensity in the area where the target material is consumed faster is reduced, thereby reducing the consumption speed in the area where the target material is consumed faster, or increasing the magnetic field intensity in the area where the target material is consumed slower, thereby accelerating the consumption speed in the area where the target material is consumed slower, thereby improving the uniformity of the target material consumption, thereby improving the utilization rate of the target material, and at the same time improving the uniformity of the film layer formed on the substrate. However, this method requires the setting up of a complex magnetic control structure and the introduction of a complex control process, which will also increase costs.

[0016] As mentioned above, the interior of the planar target can be etched relatively evenly through magnetron scanning. The problem of full-area etching of rectangular planar targets generally occurs at the four sides and four corners, especially the corners. In order to ensure full-area etching of the target, the magnetron needs to be able to reach the corners of the target regularly. However, the magnetron scanning track in the related technology can only reach part of the corners of the target, resulting in the other corners not being well etched, affecting the utilization rate of the target, and also causing particle problems caused by secondary deposition of the edges and corners of the planar target. Summary of the invention

[0017] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention provides a scanning magnetron device for a PVD rectangular planar target, which can improve the utilization rate of the target material.

[0018] The invention also provides a thin film deposition device.

[0019] A scanning magnetron device for a PVD rectangular planar target according to a first embodiment of the present invention comprises: Magnetron; A driving device, used for driving the magnetron to move relative to the rectangular planar target along a first direction and a second direction so that the magnetron reaches a limit position corresponding to each corner of the rectangular planar target, wherein the first direction is parallel to the width direction of the magnetron, and the second direction is parallel to the length direction of the magnetron; The moving stroke of the magnetron includes a first stroke and a second stroke performed sequentially, in which the magnetron moves between a first limit position and a second limit position, or between a third limit position and a fourth limit position, in the first stroke, the magnetron moves between the first limit position and the third limit position, or between the second limit position and the fourth limit position, in the second stroke, the magnetron moves between the first limit position and the third limit position, or between the second limit position and the fourth limit position, the first limit position, the second limit position, the third limit position and the fourth limit position are all different limit positions, and the first limit position and the second limit position as well as the third limit position and the fourth limit position are all distributed along the first direction, and the first limit position and the third limit position as well as the second limit position and the fourth limit position are all distributed along the diagonal direction of the rectangular plane target.

[0020] The magnetic control device according to the embodiment of the present invention has at least the following beneficial effects: Starting from the same starting position, the extreme position reached by the magnetron after completing the second stroke must be different from the extreme position started or reached by the magnetron in the first stroke. Therefore, after alternating cycles of the first stroke and the second stroke, the magnetron can reach each extreme position, and the magnetron at the extreme position can etch the corners of the rectangular plane target. Therefore, the magnetron of this embodiment can etch the corners of the rectangular plane target.

[0021] In other embodiments of the present invention, the first stroke includes a single movement stroke of the magnetron between the first extreme position and the second extreme position or a single movement stroke between the third extreme position and the fourth extreme position, and the second stroke includes a single movement stroke of the magnetron between the first extreme position and the third extreme position or a single movement stroke between the second extreme position and the fourth extreme position.

[0022] In other embodiments of the present invention, the magnetron moves synchronously along the first direction and the second direction to perform the first stroke, and / or the magnetron moves synchronously along the first direction and the second direction to perform the second stroke.

[0023] In other embodiments of the present invention, in the first stroke, the single scanning time length of the magnetron along the first direction is A times the single scanning time length along the second direction, and A satisfies the setting: A xa is an even number, where a is a positive integer; In the second stroke, a single scanning time length of the magnetron along the first direction is B times a single scanning time length along the second direction, and B satisfies the setting: B xb is an odd number, where b is a positive integer.

[0024] In other embodiments of the present invention, A is an even number, and B is an odd number.

[0025] In other embodiments of the present invention, the corner is an arc corner, the magnetron includes an outer magnetic assembly and an intermediate magnetic assembly disposed inside the outer magnetic assembly, the outer magnetic assembly includes straight line portions located on opposite sides of the intermediate magnetic assembly, and arc portions connected to the same end of the straight line portions on both sides, and the straight line portions are parallel to the second direction; Wherein, when the magnetron moves to the extreme position, the arc portion is concentric with the corresponding arc corner.

[0026] In other embodiments of the present invention, when the magnetron moves to the extreme position, the outer edge of the straight line portion on one side exceeds the corresponding side edge of the rectangular plane target by a set distance, and / or the outer edge of the arc portion at one end exceeds the outer edge of the arc corner portion of the rectangular plane target.

[0027] In other embodiments of the present invention, the magnetron includes an outer magnetic component and a middle magnetic component disposed inside the outer magnetic component, and the magnetic field strength of the middle magnetic component is greater than the magnetic field strength of the outer magnetic component.

[0028] In other embodiments of the present invention, the outer magnetic assembly includes a plurality of outer magnets, and the middle magnetic assembly includes a plurality of middle magnets. The heights of the outer magnets and the middle magnets from the rectangular plane target and their own heights are equal. Along a direction parallel to the rectangular plane target, the cross-sectional area of ​​the outer magnets is smaller than the cross-sectional area of ​​the middle magnets.

[0029] A thin film deposition device according to a second embodiment of the present invention includes: Vacuum chamber; The magnetic control device; A target mounting device, used for fixing the planar target in the vacuum chamber; The base is used to fix the substrate in the vacuum chamber.

[0030] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The present invention will be further described below with reference to the accompanying drawings and embodiments, wherein: Figure 1 is a schematic diagram of a typical magnetron sputtering device in the related art; Figure 2 is a schematic diagram of a magnetron in the related art; Figure 3 is a schematic diagram of a magnetron in the related art; Figure 4 is a schematic diagram of a magnetron in the related art; Figure 5 A schematic diagram of a magnetron scanning along a fixed track; Figure 6 A graph showing the relationship between the speed, time and position of the magnetron when the magnetron is scanning along a fixed track; Figure 7 A schematic diagram of a magnetron scanning through a variable trajectory; Figure 8 A graph showing the relationship between the speed, time and position of the magnetron when the magnetron is scanning along a variable trajectory; Fig. 9 for Figure 7 Schematic diagram of the magnetron; Fig.10 for Figure 7 Schematic diagram of a magnetron with an imbalance ratio less than 1 and a rectangular planar target.

[0032] Reference numerals: Flat sputtering device 20, vacuum chamber 22, base 24, substrate 26, rectangular planar target 28, first insulating plate 30, back plate 32, back cavity 34, second insulating plate 36, plasma 38, racetrack magnetron 40, middle magnetic pole 42, outer magnetic pole 44, magnetic pole gap 46, straight portion 48, semicircular portion 50, serpentine magnetron 52, serpentine plasma closed loop 54, spiral magnetron 56, spiral plasma closed loop 58, magnetron 60, outer magnetic assembly 62, middle magnetic assembly 64, gap 66, outer magnet 68, middle magnet 70, outer linear unit 72, outer arc unit 74, inner linear unit 76, inner arc unit 78, straight portion 80, arc portion 82, plasma center line 84, gap center line 86, magnetron first corner M 1 , Magnetron second corner M 2 , Magnetron third corner M 3 , the fourth corner of the magnetron M 4 , the first corner of the target T 1 , target second corner T 2 , the third corner T of the target 3 , the fourth corner T of the target 4 , single scan time in X direction t x , single scan time in Y direction t y . DETAILED DESCRIPTION

[0033] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0034] In the description of the present invention, it is necessary to understand that the orientations involved are only for the convenience of describing the present invention, and are not intended to indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting the present invention.

[0035] In the description of the present invention, the meaning of "plurality" is more than two. If there is a description of "first" or "second", it is only for the purpose of distinguishing the technical features, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0036] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific content of the technical solution.

[0037] In the description of the present invention, the description with reference to the terms "one embodiment", "some embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0038] To facilitate understanding, first combine Figure 1 The general principle of magnetron sputtering is explained. During sputtering, argon gas is passed through the vacuum chamber, and the racetrack-shaped magnetron 40 generates a magnetic field. The negative voltage of the power supply applied to the rectangular planar target 28 is used to generate an electric field. Under the action of the electric field, the electrons move from the rectangular planar target 28 to the substrate 26. During the movement, they collide with argon atoms, causing them to be ionized to generate argon ions and new electrons. Under the action of the electric field, the argon ions are accelerated to fly toward the rectangular planar target 28, bombarding the target surface to cause the target material to be sputtered. The sputtered target material particles are deposited on the surface of the substrate 26 to form a thin film. The electrons generated during sputtering and the argon ions and new electrons generated when the argon atoms collide with the electrons are used to form and maintain plasma 38 on the surface of the target material, so that the above-mentioned argon gas ionization and bombardment process can be repeated to achieve continuous magnetron sputtering film deposition.

[0039] Reference Figure 2 , which shows a typical racetrack-shaped magnetron 40, which includes a middle magnetic pole 42 and an outer magnetic pole 44, the outer magnetic pole 44 is arranged around the middle magnetic pole 42, and a magnetic pole gap 46 is formed between the two, and the outer magnetic pole 44 includes a straight portion 48 and a semicircular portion 50. When the magnetic field strengths of the middle magnetic pole 42 and the outer magnetic pole 44 are the same, the magnetic field strength at the center line of the magnetic pole gap 46 is the strongest, so the density of the correspondingly formed plasma is the highest at the center line of the magnetic pole gap 46, and the distribution law of the actual plasma density is roughly a normal distribution with the center line of the gap as the symmetry line, that is, the plasma density is the highest at the center line, and the closer to the magnetic poles on both sides, the lower the plasma density.

[0040] like Figure 5 As shown in FIG. 1 , the magnetron 60 of the present invention is a linear magnetron having a racetrack shape. However, the magnetron 60 may also be in other shapes, such as a square magnetron. Figure 3 and Figure 4As shown. The length of the rectangular planar target 28, that is, the size of the planar target along the second direction, can be similar to the length of the magnetron 60, and the influence of the width of the rectangular planar target 28 on the utilization of the target material is closely related to the width of the magnetron 60. If the width of the rectangular planar target 28 is very close to the width of the magnetron 60, the magnetron 60 can only be fixed and the utilization of the target material will be very low. When the rectangular planar target 28 is much wider than the magnetron 60 and the magnetron 60 can move back and forth along the first direction, the utilization of the target material can be rapidly improved.

[0041] However, although the problem of etching uniformity in the middle area of ​​the rectangular planar target 28 is solved by scanning the magnetron 60, the edges and corners of the rectangular planar target 28 still have the problem of uneven etching, especially the corners of the target material. This problem is caused in part by the fact that the magnetron 60 is usually scanned using a fixed track, and the magnetron 60 can only reach part of the corners, resulting in that the other corners cannot be fully etched. Specifically, refer to Figure 5 In the figure, the actual limit position of the magnetron 60 is marked by the solid line, and the other limit positions that the magnetron 60 can reach are marked by the dotted line. Here, the concept of "limit position" must be clarified. The limit position refers to the farthest position that the magnetron 60 can reach in the first direction and the second direction without affecting the normal operation of the magnetron 60. It usually refers to the position where the outermost side of the magnetic pole of the magnetron 60 is close to the edge of the rectangular plane target 28. For example, the four corners of the magnetron 60 are respectively named as the first corner M of the magnetron 1 , Magnetron second corner M 2 , Magnetron third corner M 3 , Magnetron fourth corner M 4 The four corners of the rectangular planar target 28 are respectively named as the first corners of the target material T 1 , target second corner T 2 , the third corner T of the target 3 , the fourth corner T of the target 4 , when the magnetron 60 is at different extreme positions of the upper left corner, the upper right corner, the lower right corner, and the lower left corner, the first corner M of the magnetron 1 The first corner T of the target can be 1 Etching is performed, and the second corner M of the magnetron 2 The second corner T of the target can be 2 Etching is performed, and the third corner M of the magnetron 3 The third corner T of the target can be 3 Etching is performed, and the fourth corner M of the magnetron 4 The fourth corner T of the target can be 4Here, M is the first letter of the English word "Magnetron" for magnetron 60 ; T is the first letter of the English word "Target" for rectangular planar target 28 .

[0042] like Figure 5 As shown, if the magnetron 60 is from the first corner T of the corresponding rectangular planar target 28 1 The limit position (such as the upper left corner) is scanned along the first direction L 1 If there is no displacement along the second direction, the magnetron 60 will reach the second corner T of the corresponding rectangular planar target 28. 2 If the magnetron 60 is moved from the second corner T corresponding to the rectangular planar target 28 2 The limit position of the scan along the second direction L 2 If there is no displacement along the first direction, the magnetron 60 will reach the third corner T of the corresponding rectangular planar target 28. 3 If the magnetron 60 is moved from the third corner T corresponding to the rectangular planar target 28 3 The limit position of the scan along the first direction L 1 If there is no displacement along the second direction, the magnetron 60 will reach the fourth corner T of the corresponding rectangular planar target 28. 4 (e.g., the lower left corner). In this way, if there is only one direction of movement at the same time, the magnetron 60 can reach any corner. However, in actual use, the magnetron 60 does not only scan in one direction, but often scans in two directions at the same time. In other words, the movement of the magnetron 60 is a composite movement including a first direction movement component and a second direction movement component, and its movement trajectory is similar to a sawtooth shape. Since the size of the rectangular planar target 28 along the first direction is significantly larger than the size of the magnetron 60 along the first direction, and the size of the rectangular planar target 28 along the second direction is relatively close to the size of the magnetron 60 along the second direction, the single scanning time t in the X direction for the magnetron 60 to move from one extreme position to another extreme position (e.g., from the upper left corner to the upper right corner) along the first direction is x , will also be significantly longer than the Y-direction single scanning time t of the magnetron 60 moving from one extreme position to another extreme position (for example, from the upper left corner to the lower left corner) along the second direction. y , and thus when the magnetron 60 is scanning from one extreme position to another extreme position along the first direction, it has performed multiple reciprocating scans along the second direction.

[0043] Usually, in order to simplify the control, the single scan time in the X direction is t x is the single scan duration in the Y direction t y Integer multiples, taking an even multiple as an example, if the magnetron 60 is Figure 5Starting from the extreme position of the upper left corner, after a single scan in the X direction for a duration of t x After reaching the upper right corner, it passes through twice the single scan time t in the X direction. x After that, it returns to the upper left corner limit position; Taking odd multiples as an example, if the magnetron 60 Figure 5 Starting from the extreme position of the upper left corner, after a single scan in the X direction for a duration of t x After reaching the limit position of the lower right corner, and after twice the single scanning time t in the X direction x Then return to the upper left corner limit position. This process can also be done by Figure 6 The speed of the magnetron 60 and the position of the magnetron 60 are shown in the figure. Figure 6 Curve 1 in FIG. 1 shows the time variation trend of the speed of the moving component of the magnetron 60 along the first direction and the time point when the magnetron 60 reaches the limit position. Figure 6 Curve 2 in Figure 2 shows that when t x With t y The ratio is an even number, for example, t x / t y =4, the changing trend of the speed of the moving component of the magnetron 60 along the second direction with time and the time point when the magnetron 60 reaches the limit position. Figure 6 Curve 3 in the figure shows that when t x With t y The ratio is an odd number, for example, t x / t y =5, the change trend of the speed of the moving component of the magnetron 60 along the second direction with time and the time point when the magnetron 60 reaches the limit position. Referring to curve 1, the single scanning time t in the X direction in the first stage x Inside, the magnetron 60 is from the corresponding first corner T 1 Starting from the extreme position of V 1X (=0) After gradual acceleration (the inclined section on the left), maintain V 2X After moving a certain distance, it gradually decelerates (the inclined section on the right) and decelerates to zero speed V 1X At the moment, the magnetron 60 reaches an extreme position, and then moves in the opposite direction to the original extreme position. Referring to curve 2, the single scan time t in the X direction in the first stage x In the second direction, the magnetron 60 undergoes multiple acceleration-uniform movement-deceleration. Combining the movement in the two directions, the magnetron 60 reaches the corresponding second corner T 2 The magnetron 60 then moves again, and after a second stage of single scanning in the X direction for a duration of t x After that, the magnetron 60 finally returns to the corresponding first corner T 1The difference between curve 3 and curve 2 is that after the first stage, the magnetron 60 corresponds to the third corner T 3 The extreme position, rather than the second corner T 2 limit position.

[0044] As can be seen from the previous section, for t x Yes y In the scenario of an even multiple of t, if the starting position of the magnetron 60 is the upper left corner or the upper right corner, the magnetron 60 can only reach the upper left corner and the upper right corner, and the lower left corner and the lower right corner of the rectangular planar target 28 cannot be etched; for t x Yes y In the scenario of an odd multiple of , if the starting position of the magnetron 60 is the upper left corner, the magnetron 60 can only reach the limit positions of the upper left corner and the lower right corner, and the lower left corner and the upper right corner of the rectangular planar target 28 cannot be etched, resulting in the rectangular planar target 28 not being fully etched.

[0045] Based on the above problems, the present invention proposes a scanning magnetron device for a PVD rectangular planar target, which includes a magnetron 60 and a driving device, wherein the driving device is used to drive the magnetron 60 to move.

[0046] Specifically, refer to Figure 5 The driving device is used to drive the magnetron 60 to move relative to the rectangular plane target 28 along the first direction and the second direction, so that the magnetron 60 reaches the limit position corresponding to each corner of the rectangular plane target 28, wherein each corner of the rectangular plane target 28 and each limit position of the magnetron 60 can be understood with reference to the above, wherein the first direction is parallel to the width direction of the magnetron 60, and the second direction is parallel to the length direction of the magnetron 60. It should be noted that the driving device is used to drive the magnetron 60 to move relative to the rectangular plane target 28 along the first direction and the second direction, which can refer to that the driving device drives the magnetron 60 to move along the first direction and the second direction at the same time, and can also refer to that the driving device drives the magnetron 60 to move only along the first direction or only along the second direction.

[0047] Reference Figure 7In the scanning process of this embodiment, the movement stroke of the magnetron 60 includes a first stroke and a second stroke performed sequentially, wherein in the first stroke, the magnetron 60 moves between the first limit position and the second limit position, or between the third limit position and the fourth limit position, and in the second stroke, the magnetron 60 moves between the first limit position and the third limit position, or between the second limit position and the fourth limit position, and the first limit position, the second limit position, the third limit position and the fourth limit position are all different limit positions. That is, in the first stroke, the magnetron 60 moves between two limit positions in a direction perpendicular to the long axis of the magnetron; in the second stroke, the magnetron 60 moves between two limit positions in a diagonal direction. In this way, starting from the same starting position, the limit position reached by the magnetron 60 after completing the second stroke must be different from the limit position reached by the magnetron 60 after the first stroke. Therefore, after alternating cycles of the first stroke and the second stroke, the magnetron 60 can reach each limit position, and the magnetron 60 at the limit position can etch the corners of the rectangular planar target 28. Therefore, the magnetron 60 of this embodiment can etch the corners of the rectangular planar target 28.

[0048] This process can also be done through Figure 8 The speed of the magnetron 60 and the position of the magnetron 60 are shown in the figure. Figure 8 Curve 1 in FIG. 1 shows the variation trend of the speed of the moving component of the magnetron 60 along the first direction with time, and curve 2 shows the variation trend of the speed of the moving component along the first direction with time when t x With t y The ratio is an even number, for example, t x / t y =4, the speed of the component moving in the second direction of the magnetron 60 changes with time. Curve 3 shows that when t x With t y The ratio is an odd number, for example, t x / t y =5, the speed of the moving component of the magnetron 60 along the second direction changes with time. Referring to curve 1, the single scanning time t in the X direction in the first stage x Inside, the magnetron 60 is from the corresponding first corner T 1 Starting from the extreme position of V 1X (=0) After gradual acceleration (the inclined section on the left), maintain V 2X After moving a certain distance, it gradually decelerates (the inclined section on the right side of the left trapezoid). On the other hand, referring to curve 2, the single scan time t in the X direction in the first stage xIn the second direction, the magnetron 60 undergoes multiple acceleration-uniform movement-deceleration. Combining the movement in the two directions, the magnetron 60 reaches the limit position corresponding to the second corner T2. Subsequently, the magnetron 60 moves again and undergoes a single scan in the X direction of the second stage for a duration of t x After that, the magnetron 60 finally reaches the corresponding fourth corner T 4 limit position. Figure 8 and Figure 6 The difference is: Figure 6 In the first and second stages, t x With t y The ratio is constant, Figure 8 In the first and second stages, t x With t y The ratio of has changed from an even number in the first stage to an odd number in the second stage.

[0049] It should be noted that in order to more clearly understand the present solution, it is necessary to clearly state the relevant concepts of the above embodiments. First, the first stroke and the second stroke mentioned above are not specific, but are concepts defined for the convenience of description. If the magnetron 60 always moves only between two extreme positions in a certain period of time, the scanning stroke of the magnetron 60 in this period of time is called the first stroke or the second stroke. For example, if the magnetron 60 moves from the first corner T corresponding to the target material 1 The limit position moves to the corresponding second corner T of the target 2 After reaching the limit position, the second corner T of the corresponding target is 2 The limit position returns to the first corner T of the target 1 The first stroke is called the first stroke no matter how many times the process is repeated. 1 The limit position or the corresponding second corner T of the target 2 After starting from the extreme position, the extreme position reached along the diagonal line corresponds to the third corner T of the target. 3 The limit position or the corresponding fourth corner T of the target 4 After the magnetron 60 reaches the limit position of the target, the subsequent movement can be called the second stroke. 1 The limit position moves to the corresponding second corner T of the target 2 The limit position, and then from the corresponding second corner T of the target 2 The limit position moves along the diagonal line to the fourth corner T of the corresponding target 4 The limit position will be from the first corner T of the target 1 Towards the second corner T of the target 2 The movement is called the first stroke, which moves from the second corner T of the target 2To the fourth corner T of the target 4 The movement is called the second stroke.

[0050] Secondly, the first limit position, the second limit position, the third limit position and the fourth limit position mentioned above are also not specific. Each limit position satisfies the condition that the first limit position and the second limit position are distributed along the first direction (that is, the width direction of the magnetron 60), the third limit position and the fourth limit position are distributed along the first direction, the first limit position and the third limit position are distributed along the diagonal direction of the rectangular plane target 28, and the second limit position and the fourth limit position are distributed along the diagonal direction of the rectangular plane target 28. For example, the first limit position is when the magnetron 60 reaches the first corner T of the rectangular plane target 28. 1 The second limit position is when the magnetron 60 reaches the second corner T of the rectangular planar target 28. 2 The third limit position is when the magnetron 60 reaches the third corner T of the rectangular planar target 28. 3 The fourth limit position is when the magnetron 60 reaches the fourth corner T of the rectangular planar target 28. 4 (that is, the lower left corner).

[0051] On the basis of this embodiment, the first stroke includes a single movement stroke of the magnetron 60 between the first limit position and the second limit position or a single movement stroke between the third limit position and the fourth limit position, and the second stroke includes a single movement stroke of the magnetron 60 from the first limit position to the third limit position or a single movement stroke between the second limit position and the fourth limit position, that is, the first stroke and the second stroke in this embodiment do not include repeated movement between the two limit positions, and each time the magnetron 60 completes a stroke, the end point of the stroke it reaches is not used as the starting point of the stroke, so that the corners of the rectangular planar target 28 can be etched more evenly. For example, if the magnetron 60 moves from the first corner T corresponding to the target material 1 Starting from the first extreme position of the target, its movement trajectory within one cycle is: first perform a first stroke to move from the first extreme position of the upper left corner of the target to the second extreme position of the upper right corner of the target, then perform a second stroke to move from the second extreme position of the upper right corner of the target to the fourth extreme position of the lower left corner of the target, then perform a first stroke to move from the fourth extreme position of the lower left corner of the target to the third extreme position of the lower right corner of the target, and finally perform a second stroke to return from the third extreme position of the lower right corner of the target to the first extreme position of the upper left corner of the target.

[0052] In other embodiments, the first stroke includes multiple reciprocating strokes of the magnetron 60 between the first extreme position and the second extreme position or multiple reciprocating strokes between the third extreme position and the fourth extreme position, and the second stroke includes multiple reciprocating strokes of the magnetron 60 between the first extreme position and the third extreme position or multiple reciprocating strokes between the second extreme position and the fourth extreme position. Exemplarily, the magnetron 60 moves from the first corner T corresponding to the target material 1 Starting from the first limit position, in the first stroke, the magnetron 60 is at the first limit position and is in contact with the second corner T of the corresponding target material. 2 Repeat the movement between the second limit position 3 times or other odd number of times, so that the magnetron 60 can always reach the second limit position, and then in the second stroke, the second limit position is aligned with the fourth corner T of the corresponding target material. 4 The fourth limit position is repeatedly moved 3 times or other odd numbers of times, so that the magnetron 60 can always reach the fourth limit position in the end, and so on to form other positions. In this way, after running for a relatively long time, each corner of the rectangular planar target 28 is etched relatively evenly.

[0053] In some embodiments of the present invention, the magnetron 60 moves synchronously along the first direction and the second direction to perform the first stroke, and in other embodiments, the magnetron 60 moves synchronously along the first direction and the second direction to perform the second stroke. In this way, the scanning track of the magnetron 60 can be extended and the scanning area of ​​the magnetron 60 can be increased.

[0054] On the basis of the above-mentioned embodiments, in some embodiments of the present invention, in the first stroke, the single scanning time length of the magnetron 60 along the first direction is A times the single scanning time length along the second direction, and A satisfies the setting: A xa is an even number, where a is a positive integer; similarly, in the second stroke, the single scanning time length of the magnetron 60 along the first direction is B times the single scanning time length along the second direction, and B satisfies the setting: B xb is an odd number, where b is a positive integer. The single scanning time length of the magnetron 60 along the first direction refers to the time length required for the magnetron 60 to move from one side of the first direction to the other side, that is, the aforementioned single scanning time length t in the X direction x The single scanning time along the second direction refers to the time required for the magnetron 60 to move from one side to the other side in the second direction, which is the single scanning time t in the Y direction mentioned above. y .

[0055] In some specific embodiments, A is an even number and B is an odd number, in which case both a and b can be 1. In the first and second strokes of this embodiment, by setting the single scan duration in the first direction to an integer multiple of the single scan duration in the second direction, it can be ensured that when the magnetron 60 starts from a certain extreme position and passes through the single scan duration in the first direction, the magnetron 60 will inevitably reach another extreme position, thereby simplifying the control. At the same time, A and B are an even number and an odd number, respectively, which can ensure that the magnetron 60 reaches each corner of the rectangular planar target 28. For example, referring to Figure 7 , Figure 8 The magnetron 60 starts from the upper left corner of the target and scans in the X direction for a single time t x The single scan time in the Y direction is t y Scanning in an even-numbered manner, a single scan in the X direction takes t x After reaching the upper right corner of the target, it scans in the X direction for a single time t x The single scan time in the Y direction is t y Scanning in odd multiples, a single scan in the X direction takes t x After reaching the lower left corner of the target, it scans in the X direction for a single time t x The single scan time in the Y direction is t y Scanning in an even-numbered manner, a single scan in the X direction takes t x After reaching the lower right corner of the corresponding target, it scans in the X direction for a single time t x The single scan time in the Y direction is t y Scanning in odd multiples, a single scan in the X direction takes t x Then it returns to the upper left corner of the corresponding target material to complete a cycle. In this way, the four corners of the rectangular planar target 28 can be etched in each cycle, thereby achieving comprehensive etching of the rectangular planar target 28.

[0056] It should be noted that, in other embodiments, the aforementioned A and B do not need to be limited to integers. In this case, the magnetron 60 needs to scan a times along the first direction to complete the first stroke (in this case, a is a positive integer greater than 1), and the magnetron 60 needs to scan b times along the second direction to complete the first stroke (in this case, b is a positive integer greater than 1). In other words, even if the magnetron 60 cannot reach a certain limit position after a single scan along the first direction, it can still reach a certain limit position after multiple scans. Exemplarily, A is 4.6, a is 10, and the product of the two, 46, is an even number, which means that the magnetron 60 completes the first stroke after 10 scans along the first direction, and at this time, the magnetron 60 reaches the limit position. Alternatively, B is 5.3, b is 10, and the product of the two, 53, is an odd number, which means that the magnetron 60 completes the second stroke after 10 scans along the first direction, and at this time, the magnetron 60 reaches the limit position.

[0057] In some embodiments of the present invention, reference Figure 7 and Fig. 9 , each corner of the rectangular plane target 28 is an arc corner, that is, the overall shape of the rectangular plane target 28 is the shape after the four corners of the rectangular body are replaced by arc surfaces. Specifically, the circumferential side surface of the rectangular plane target 28 includes a first plane parallel to the first direction and a second plane parallel to the second direction, and arc surfaces tangent to the first plane and the second plane respectively.

[0058] Based on the above structure, refer to Figure 7 and Fig. 9 The magnetron 60 of this embodiment includes an outer magnetic assembly 62 and a middle magnetic assembly 64, wherein the outer magnetic assembly 62 is arranged around the outer side of the middle magnetic assembly 64. The outer magnetic assembly 62 and the middle magnetic assembly 64 are arranged at intervals to form a gap 66. The outer magnetic assembly 62 and the middle magnetic assembly 64 each include a plurality of magnets. For the convenience of distinction, the magnets included in the outer magnetic assembly 62 and the middle magnetic assembly 64 are respectively named as outer magnet 68 and middle magnet 70 (shown in FIG. Fig.10 In the figure, the magnets in the outer magnetic assembly 62 and the middle magnetic assembly 64 are symmetrically distributed with the center line of the magnetron 60 as the symmetry axis.

[0059] The outer magnetic assembly 62 includes an outer linear unit 72 and an outer arc unit 74 connected to the end of the outer linear unit 72, wherein the outer linear unit 72 includes a plurality of outer magnets 68, and the plurality of outer magnets 68 are sequentially arranged along the second direction. The outer arc unit 74 is configured as an arc structure, specifically, as an arc structure, and the outer arc unit 74 can be an integral structure, or can include a plurality of outer magnets 68 distributed along the arc.

[0060] There are two outer linear units 72, which are arranged in parallel on opposite sides of the middle magnetic assembly 64. The outer linear units 72 are spaced apart from the middle magnetic assembly 64 to form a gap 66. In the illustrated embodiment, the two outer linear units 72 are symmetrically arranged relative to the middle magnetic assembly 64. The two ends of the outer arc unit 74 are respectively connected to the same end of the outer linear units 72 on both sides.

[0061] The intermediate magnetic assembly 64 includes an inner linear unit 76 and an inner arc unit 78 connected to the end of the inner linear unit 76, wherein the inner linear unit 76 includes a plurality of intermediate magnets 70, and the plurality of intermediate magnets 70 are sequentially arranged along the second direction. The inner arc unit 78 is configured as an arc structure, specifically, as an arc structure, and the inner arc unit 78 is generally an integral structure, and may also include a plurality of intermediate magnets 70 distributed along the arc.

[0062] It should be noted that, in some embodiments, the outer linear unit 72 and the inner linear unit 76 form a linear portion 80 of the magnetron 60. The linear portion 80 includes two outer linear units 72, and the two opposite ends of the linear portion 80 are connected with arc portions 82, thereby forming a racetrack-shaped magnetron. In other embodiments, the linear portion 80 may also include a larger number of outer linear units 72 and inner linear units 76 to form a wider magnetron.

[0063] In this embodiment, the magnetron 60 can also achieve etching at the rounded corners of the rectangular planar target 28, so as to further improve the utilization rate of the rectangular planar target 28. When the magnetron 60 is in the extreme position, the outer arc unit 74 of the magnetron 60 is concentrically arranged with the corresponding arc corner on the rectangular planar target 28. For example, when the magnetron 60 is in the extreme position on the upper left side of the figure, the arc portion 82 is concentrically arranged with the arc corner on the upper left of the rectangular planar target 28, so that the plasma 38 corresponding to the outer arc unit 74 can be distributed roughly along the contour of the arc corner, thereby achieving full-area etching at the arc corner.

[0064] It should be noted that the "concentric" referred to in the above embodiment should be understood as approximately concentric, that is, the center of the outer arc unit 74 of the magnetron 60 can deviate from the center of the arc corner of the plane target within a small range, so as to ensure that the outer arc unit 74 of the magnetron 60 can approximately correspond to the arc corner.

[0065] In some embodiments, reference Figure 7When the magnetron 60 is in the extreme position, the outer edge of the magnetron 60 will exceed the outer edge of the rectangular plane target 28 by a certain distance. As mentioned above, the distribution law of the plasma density is roughly a normal distribution with the center line of the gap as the symmetry line. The plasma density is highest at the center line. When the outer edge of the magnetron 60 exceeds the rectangular plane target 28, the middle straight line part with stronger etching ability can be closer to the edge of the rectangular plane target 28, thereby increasing the etching uniformity of the edge area of ​​the rectangular plane target 28. Combined with the above-mentioned setting of the outer arc unit 74 of the magnetron 60 at the extreme position to be concentric with the arc corner of the rectangular plane target 28, the rounded corner can be better etched. In some specific embodiments, when the magnetron 60 moves to the extreme position, the outer edge of the outer straight line unit 72 on one side exceeds the corresponding side edge of the corresponding rectangular plane target 28 by a set distance. For example, Figure 7 The left outer edge of the left outer linear unit 72 exceeds the left edge of the rectangular planar target 28 by a certain distance d x In other specific embodiments, the outer edge of the outer arc unit 74 at one end exceeds the outer edge of the arc corner of the corresponding rectangular plane target 28, for example, Figure 7 The outer edge of the outer arc unit 74 at the upper middle end exceeds the outer edge of the arc corner portion of the upper left corner of the rectangular plane target 28 by a certain distance d y It should be noted that the distance of the outer edge of the magnetron 60 beyond the target edge should not affect the continued magnetron sputtering. In some embodiments, the distance of the outer edge of the magnetron 60 beyond the target edge is no more than 15 mm.

[0066] In some embodiments of the present invention, the magnetic field strength of the middle magnetic assembly 64 is greater than the magnetic field strength of the outer magnetic assembly 62. The normal distribution of plasma density is based on the premise that the magnetic field strengths of the inner and outer magnetic assemblies are equal. If the magnetic field strength of the middle magnetic assembly 64 is greater than the magnetic field strength of the outer magnetic assembly 62, the plasma center line 84 (i.e., the position with the highest density) will be offset outward relative to the gap center line 86 of the gap 66, such as Fig.10 As shown, the deepest point of plasma etching is offset outward by a distance d relative to the gap center line 86 of the gap 66. In this way, when the magnetron 60 is in the extreme position, even if the outer edge of the magnetron 60 does not exceed the outer edge of the rectangular plane target 28, or the excess distance is reduced, the full-area etching requirements can be met.

[0067] When the magnetic field strength of the middle magnetic assembly 64 is greater than the magnetic field strength of the outer magnetic assembly 62, in some embodiments of the present invention, the outer magnetic assembly 62 includes a plurality of outer magnets 68, and the middle magnetic assembly 64 includes a plurality of middle magnets 70. Fig.10The height of the outer magnet 68 and the middle magnet 70 from the rectangular plane target 28 and the height of the outer magnet 68 and the middle magnet 70 are equal. In the direction parallel to the rectangular plane target 28, the cross-sectional area of ​​the outer magnet 68 is smaller than the cross-sectional area of ​​the middle magnet 70, which is reflected in Fig.10 In the embodiment, the width of the middle magnet 70 is greater than the width of the outer magnet 68 , so that the magnetic field strength of the middle magnetic assembly 64 can be greater than the magnetic field strength of the outer magnetic assembly 62 , and the design and manufacture of the magnetron 60 is facilitated.

[0068] In other embodiments, the middle magnet 70 may be made of a material with stronger magnetic force than the outer magnet 68 , which can also achieve the effect that the magnetic field strength of the middle magnetic component 64 is greater than the magnetic field strength of the outer magnetic component 62 .

[0069] The present invention also proposes a thin film deposition device suitable for a planar target, referring to Figure 1 It is understood that it includes a vacuum chamber 22, a base 24, a target mounting device and the magnetron device of the aforementioned embodiments, wherein the target mounting device is used to fix the rectangular planar target 28 in the vacuum chamber 22, the target mounting device can be the aforementioned first insulating plate 30 and second insulating plate 36, and the base 24 is used to fix the substrate in the vacuum chamber 22 so as to deposit a film layer on the substrate.

[0070] The embodiments of the present invention are described in detail above in conjunction with the accompanying drawings, but the present invention is not limited to the above embodiments. Various changes can be made within the knowledge of ordinary technicians in the relevant technical field without departing from the purpose of the present invention. In addition, the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict.

Claims

1. A scanning magnetron device for PVD rectangular planar targets, characterized in that: include: Magnetron; A driving device, used for driving the magnetron to move relative to the rectangular plane target along a first direction and a second direction so that the magnetron reaches a limit position corresponding to each corner of the rectangular plane target, wherein the first direction is parallel to the width direction of the magnetron, and the second direction is parallel to the length direction of the magnetron; The moving stroke of the magnetron includes a first stroke and a second stroke which are performed sequentially. In the first stroke, the magnetron moves between a first limit position and a second limit position, or between a third limit position and a fourth limit position. In the second stroke, the magnetron moves between the first limit position and the third limit position, or between the second limit position and the fourth limit position. The first limit position, the second limit position, the third limit position and the fourth limit position are all different limit positions, and the first limit position and the second limit position as well as the third limit position and the fourth limit position are all distributed along the first direction. The first limit position and the third limit position as well as the second limit position and the fourth limit position are all distributed along the diagonal direction of the rectangular plane target.

2. The scanning magnetron device for PVD rectangular planar target according to claim 1, characterized in that: The first stroke includes a single movement stroke of the magnetron between the first extreme position and the second extreme position or a single movement stroke between the third extreme position and the fourth extreme position, and the second stroke includes a single movement stroke of the magnetron between the first extreme position and the third extreme position or a single movement stroke between the second extreme position and the fourth extreme position.

3. The scanning magnetron device for PVD rectangular planar target according to claim 1, characterized in that: The magnetron moves synchronously along the first direction and the second direction to perform the first stroke, and / or the magnetron moves synchronously along the first direction and the second direction to perform the second stroke.

4. The scanning magnetron device for PVD rectangular planar target according to claim 3, characterized in that: In the first stroke, the single scanning time length of the magnetron along the first direction is A times the single scanning time length along the second direction, and A satisfies the setting: A xa is an even number, where a is a positive integer; In the second stroke, a single scanning time length of the magnetron along the first direction is B times a single scanning time length along the second direction, and B satisfies the setting: B xb is an odd number, where b is a positive integer.

5. The scanning magnetron device for PVD rectangular planar target according to claim 4, characterized in that: A is an even number and B is an odd number.

6. The scanning magnetron device for PVD rectangular planar target according to claim 1, characterized in that: The corner is an arc corner, the magnetron includes an outer magnetic assembly and a middle magnetic assembly arranged inside the outer magnetic assembly, the outer magnetic assembly includes straight line portions located on two opposite sides of the middle magnetic assembly, and arc portions connected to the same end of the straight line portions on both sides, and the straight line portions are parallel to the second direction; Wherein, when the magnetron moves to the extreme position, the arc portion is concentric with the corresponding arc corner.

7. The scanning magnetron device for PVD rectangular planar target according to claim 6, characterized in that: When the magnetron moves to the extreme position, the outer edge of the straight line portion on one side exceeds the corresponding side edge of the rectangular plane target by a set distance, and / or the outer edge of the arc portion at one end exceeds the outer edge of the arc corner portion of the rectangular plane target.

8. The scanning magnetron device for PVD rectangular planar target according to claim 1, characterized in that: The magnetron includes an outer magnetic component and a middle magnetic component arranged inside the outer magnetic component, and the magnetic field strength of the middle magnetic component is greater than the magnetic field strength of the outer magnetic component.

9. The scanning magnetron device for PVD rectangular planar target according to claim 8, characterized in that: The outer magnetic assembly includes a plurality of outer magnets, and the middle magnetic assembly includes a plurality of middle magnets. The heights of the outer magnets and the middle magnets from the rectangular plane target and their own heights are equal. Along a direction parallel to the rectangular plane target, the cross-sectional area of ​​the outer magnets is smaller than the cross-sectional area of ​​the middle magnets.

10. A thin film deposition device, characterized in that: include: Vacuum chamber; A scanning magnetron device for a PVD rectangular planar target according to any one of claims 1 to 9; A target mounting device, used for fixing the planar target in the vacuum chamber; The base is used to fix the substrate in the vacuum chamber.

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