Electronic load for simulating power utilization characteristics of TR assembly
By designing the electronic load of analog TR components, using high-speed MOS tubes and digital varistors to achieve accurate simulation of the electrical characteristics of high-dynamic current pulses of T/R components, the electronic load at high-speed current jump and flexible resistance in the prior art is solved. The selection is insufficient, suitable for testing and verification of active phased array radar antennas.
Patent Information
- Application Number
- CN202411334967.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-24
- Publication Date
- 2025-01-10
AI Technical Summary
The existing electronic loads are difficult to truly reflect the electrical usage characteristics of T/R components during high-speed current jump, and conventional designs are difficult to achieve high jump rate and flexible resistance selection, resulting in deviations from actual applications.
An electronic load that simulates the electrical characteristics of TR components is designed, including multiple T/R component simulators and total controllers, and is realized through PID adjustment using high-speed MOS tubes, high-speed gate drivers, voltage regulation modules and current monitoring modules. High-speed current jump, and a liquid-cooled heat dissipation module and digital varistor are used to quickly respond and adapt to different voltage and current conditions.
It realizes accurate simulation of the electrical characteristics of high dynamic current pulses of T/R components, and is suitable for testing and verification of active phased array radar antennas. It has the ability to change and expand rapidly, and improves the accuracy and flexibility of the test.
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Figure CN119291624A_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the technical field of power electronic equipment, and in particular to an electronic load for simulating the power consumption characteristics of a TR component. Background Art
[0002] In modern active phased array radar systems, the T / R component (Transmitter and Receiver, i.e. the radar antenna's transceiver component) is a key component, and the design of its power supply is crucial. The power consumption characteristics of the T / R component are usually high-frequency pulses and large currents, which requires the power supply to not only provide a stable output, but also be able to quickly respond to dynamic changes in the load.
[0003] When using conventional electronic loads to verify the power performance of T / R components, it is often difficult to truly reflect the power consumption of T / R components under actual working conditions. Conventional electronic loads have limitations when simulating high-speed current jumps, and their current jump slope di / dt is far lower than the actual application requirements, resulting in deviations between test results and actual applications.
[0004] To achieve a higher electronic load jump rate, the conventional design idea is to use MOSFET to disconnect the load resistor. Although this method is simple to implement, it has an obvious disadvantage in practical application: since the switching process of MOSFET is generally in the hundreds of nanoseconds, the load current jump rate is mainly limited by the ESL (equivalent series inductance) of the selected load resistor. Generally, sliding rheostats are winding resistors, and their ESL is often large, so it is difficult to achieve a high jump rate. If an independent non-inductive power resistor is selected, assuming that the test needs to cover load jumps under different voltages and currents, it is necessary to prepare a variety of resistors with different resistance values. If the voltage / current combination is more complex, more resistors with different resistance values will be required, and the corresponding resistors must be replaced when the test voltage or load current changes, which is very troublesome. Summary of the invention
[0005] The purpose of the present application is to provide an electronic load that simulates the power consumption characteristics of a TR component, so as to solve or alleviate at least one problem in the background technology.
[0006] The technical solution of the present application is: an electronic load simulating the power consumption characteristics of a TR component, comprising: a plurality of T / R component simulators and a master controller for controlling the operation of the plurality of T / R component simulators, wherein the T / R component simulator comprises: a plurality of T / R component simulation units, a simulator controller for controlling the operation of the T / R component simulation units, and a simulator communication control module for communication between the plurality of T / R component simulators, wherein:
[0007] The T / R component simulation unit further includes a high-speed MOS tube, a high-speed gate driver, a voltage regulation module, a controller module and a current monitoring module. The simulator controller is connected to the controller module to control the pulse signal generated by the controller module. The pulse signal generates a gate-source voltage with a predetermined amplitude and pulse width through the high-speed gate driver, thereby driving the high-speed MOS tube to realize the jump of its drain current;
[0008] The controller module controls the power supply adjustment module to output an adjustable voltage, thereby controlling the gate-source voltage output by the high-speed gate driver to change accordingly, thereby realizing the change of the drain current of the high-speed MOS tube, and finally making the high-speed MOS tube work in the constant current region;
[0009] The current monitoring module collects the drain current of the high-speed MOS tube to the controller module. The controller module compares the collected drain current with the target drain current. When the collected drain current and the target drain current exceed the threshold, the controller module uses PID to adjust the adjustable voltage output by the voltage regulation module, thereby adjusting the gate-source voltage output by the high-speed gate driver.
[0010] In a preferred embodiment of the present application, the T / R component simulator further comprises a motherboard, and the plurality of T / R component simulation units are mounted on the motherboard.
[0011] In a preferred embodiment of the present application, the T / R component simulator further includes a heat dissipation module for dissipating heat for the T / R component simulation unit.
[0012] In a preferred embodiment of the present application, the heat dissipation module is a liquid-cooled heat dissipation module, which fixes the T / R component simulation unit through an embedded heat dissipation copper tube frame and dissipates heat for the T / R component simulation unit through liquid cooling.
[0013] In a preferred embodiment of the present application, the high-speed MOS tube is an N-type MOSFET.
[0014] In a preferred embodiment of the present application, the voltage regulating module includes a buck converter and a feedback resistor connected to the buck converter, and the adjustable voltage output by the power regulating module is changed by adjusting the resistance value of the feedback resistor.
[0015] In a preferred embodiment of the present application, the period of the voltage drop converter is at the ns level.
[0016] In a preferred embodiment of the present application, the feedback resistor is a digital variable resistor with a serial peripheral interface. The digital variable resistor is connected to an simulator controller via the serial peripheral interface, and the resistance value of the digital variable resistor is changed by the simulator controller.
[0017] The electronic load simulating the power consumption characteristics of the TR component of the present application has the following advantages:
[0018] 1) By arbitrarily selecting the number of T / R component simulation units and / or T / R component simulators of high-speed loads, the power consumption characteristics of the T / R components of the active phased array radar antenna array under different T / R component scales in the transmission, reception, standby and other states, as well as the large dynamic current pulse power consumption characteristics when the antenna array surface is converted between the receiving and transmitting states in time-sharing and partitioning;
[0019] 2) It can simulate the power consumption characteristics of radar when the duty cycle is continuously adjustable and changes rapidly. It is suitable for the test and verification of centralized power supply and distributed power supply of active phased array radar antenna array, and other power supply test and verification that requires rapid changes in load current, and has expansion capabilities. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] In order to more clearly illustrate the technical solution provided by the present application, the following is a brief introduction to the accompanying drawings. Obviously, the accompanying drawings described below are only some embodiments of the present application.
[0021] Figure 1 This is a schematic diagram of the electronic load composition of this application.
[0022] Figure 2 This is a schematic diagram of the electronic load installation of this application.
[0023] Figure 3 This is a schematic diagram of the T / R component simulation unit composition of the present application.
[0024] Figure 4 A schematic diagram of a power supply regulation module according to an embodiment of the present application
[0025] Figure 5 This is a schematic diagram of a digital resistor according to an embodiment of the present application. DETAILED DESCRIPTION
[0026] In order to make the purpose, technical solutions and advantages of the implementation of this application clearer, the technical solutions in the embodiments of this application will be described in more detail below in conjunction with the drawings in the embodiments of this application.
[0027] In order to simulate the large dynamic change of power consumption mode when the T / R components are switched at high speed, the output current can be adjusted quickly according to the needs, the power consumption requirements of the T / R components under different duty cycle conditions can be adapted, and the wide operating voltage range can be met. At the same time, the changes in the power supply voltage of T / R components of different process materials, such as gallium arsenide T / R components and gallium nitride T / R components, ensure the reliability and stability of the power supply system in practical applications, this application proposes an electronic load that simulates the power consumption characteristics of TR components.
[0028] like Figure 1 and Figure 2 As shown, the electronic load for simulating the power consumption characteristics of a TR component provided by the present application includes: a plurality of T / R component simulators 10 and a master controller 20 for controlling the operation of the plurality of T / R component simulators 10, wherein the T / R component simulator 10 includes: a plurality of T / R component simulation units 11, a simulator controller 12 for controlling the operation of the T / R component simulation units 11, a simulator communication control module 13 for communication between the plurality of T / R component simulators 10, and a plurality of
[0029] In some embodiments of the present application, every N T / R component simulators 11 constitute a T / R component simulator assembly, and every M T / R component simulator assemblies 10 constitute an overall electronic load. A maximum of N×M T / R component simulation units 11 can be used. By arbitrarily selecting the number of T / R component simulators 11, the power consumption characteristics of the active phased array radar antenna surface under different T / R component scales can be simulated.
[0030] In a single T / R component simulator 10 of the present application, N T / R component simulation units 11 are installed on a motherboard 15 (Matherboard), and a heat dissipation module 14 is installed on the N T / R component simulation units 11. The heat dissipation module 14 is a liquid cooling heat dissipation module, and an embedded heat dissipation copper pipe frame is used to fix the T / R component simulation unit 11 and dissipate heat for the T / R component simulation unit 11 by liquid cooling. By packaging the above components, a T / R component simulator 10 package component with a predetermined number of T / R component simulation units 11 can be obtained.
[0031] like Figure 3 As shown in the schematic diagram of the T / R component simulation unit implementation, the T / R component simulation unit 11 of the present application further includes a high-speed MOS tube 111, a high-speed gate driver 112, a voltage regulation module 113, a controller module 114 and a current monitoring module 115.
[0032] In the preferred embodiment of the present application, the high-speed MOS tube is an N-type MOSFET tube. The high-speed MOS tube 111 works in the constant current region, and the simulator controller 12 is connected to the controller module 114, so that the pulse signal generated by the controller module 114 passes through the high-speed gate driver 112 to generate a gate-source (GS) voltage of a certain amplitude and pulse width, and the gate voltage further drives the high-speed MOS tube 111 to realize the jump of its drain current (load current).
[0033] The controller module 114 is connected to the voltage regulating module 113, which controls the voltage regulating module 113 to output an adjustable DC voltage. The adjustable DC voltage controls the gate-source voltage output by the gate driver 112 to change accordingly, thereby ultimately achieving a change in the drain current of the high-speed MOS tube 111, and ultimately making the high-speed MOS tube 111 operate in a constant current region.
[0034] The current monitoring module 115 is connected to the high-speed MOS tube 111, and is used to collect the drain current of the high-speed MOS tube 111 back to the controller module 114. The controller module 114 compares the collected drain current with the target drain current. When the difference between the collected drain current and the target drain current is too large and exceeds a threshold value (for example, 50mA), the controller module 114 uses PID to adjust the adjustable voltage output by the voltage regulation module 113, and then adjusts the gate-source voltage output by the high-speed gate driver 112, so as to realize closed-loop control of the drain current of the high-speed MOS tube 111, thereby reducing the influence of temperature drift of the high-speed MOS tube.
[0035] The pulse current of the electronic load is controlled by the output voltage of the voltage regulating module 113. The voltage regulating module 113 includes a buck converter and a feedback resistor connected to the buck converter, and the output adjustable voltage of the power module 113 is changed by adjusting the resistance value of the feedback resistor.
[0036] like Figure 4 The schematic diagram of the power supply adjustment module in one embodiment of the present application is shown in FIG. Figure 5 As shown is the schematic diagram of the digital rheostat used in this embodiment of the present application, the voltage step-down converter is TPS54560, and its cycle can reach hundreds of ns. The output voltage is changed by efficiently and synchronously adjusting the feedback resistance of the buck converter TPS54560. The feedback resistor is a digital rheostat AD5270 with a serial peripheral interface (SPI). The digital rheostat AD5270 is connected to the simulator controller 12 through the serial peripheral interface. The simulator controller 12 changes the resistance value of the digital rheostat AD5270 through the serial peripheral interface SPI, thereby changing the adjustable voltage output by the voltage regulation module 113.
[0037] Compared with the constant current control of electronic loads in the prior art, which generally compares the feedback voltage with the reference voltage and then adjusts the gate voltage through the operational amplifier circuit to keep the current of the MOSFET constant at the set value, but the output rise time of the operational amplifier circuit is relatively slow. In this application, a high-speed gate driver is used to generate control PWM, and the rise time and the switching process of the high-speed MOS tube are both in the ns level, which is close to open-loop control. At the same time, the feedback drain current is used to dynamically adjust the gate GS peak voltage through PID to stabilize the drain current near the set value, obtain a high rise time and obtain a relatively stable pulse control current. In addition, a modular design mode is adopted in this application. The T / R component simulator is used as the expansion unit in hardware, and a serial port is used for communication control for each T / R component simulator in software. By adding one more sub-array and adding the configuration information of one serial port, the overall verification system can be expanded.
[0038] The electronic load simulating the power consumption characteristics of the TR component of the present application has the following advantages:
[0039] 1) By arbitrarily selecting the number of T / R component simulation units and / or T / R component simulators of high-speed loads, the power consumption characteristics of the T / R components of the active phased array radar antenna array under different T / R component scales in the transmission, reception, standby and other states, as well as the large dynamic current pulse power consumption characteristics when the antenna array surface is converted between the receiving and transmitting states in time-sharing and partitioning;
[0040] 2) It can simulate the power consumption characteristics of radar when the duty cycle is continuously adjustable and changes rapidly. It is suitable for the test and verification of centralized power supply and distributed power supply of active phased array radar antenna array, and other power supply test and verification that requires rapid changes in load current, and has expansion capabilities.
[0041] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed in the present application should be included in the protection scope of the present application. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.
Claims
1. An electronic load simulating the electrical characteristics of a TR component, characterized in that: include: A plurality of T / R component simulators (10) and a master controller (20) for controlling the operation of the plurality of T / R component simulators (10), wherein the T / R component simulator (10) comprises: a plurality of T / R component simulation units (11), a simulator controller (12) for controlling the operation of the T / R component simulation units (11), and a simulator communication control module (13) for communication between the plurality of T / R component simulators (10), wherein: The T / R component simulation unit (10) further comprises a high-speed MOS tube (111), a high-speed gate driver (112), a voltage regulation module (113), a controller module (114) and a current monitoring module (115); the simulator controller (12) is connected to the controller module (114) to control the pulse signal generated by the controller module (114); the pulse signal generates a gate-source voltage with a predetermined amplitude and pulse width through the high-speed gate driver (112), thereby driving the high-speed MOS tube (111) to realize the jump of its drain current; The controller module (114) controls the power supply adjustment module (113) to output an adjustable voltage, thereby controlling the gate-source voltage output by the high-speed gate driver (112) to change accordingly, thereby achieving a change in the drain current of the high-speed MOS tube (111), and ultimately making the high-speed MOS tube (111) operate in a constant current region; The current monitoring module (115) collects the drain current of the high-speed MOS tube (111) and transmits it to the controller module (114). The controller module (114) compares the collected drain current with a target drain current. When the collected drain current and the target drain current exceed a threshold value, the controller module (114) uses PID to adjust the adjustable voltage output by the voltage regulation module (113), thereby adjusting the gate-source voltage output by the high-speed gate driver (112).
2. The electronic load simulating the electrical characteristics of a TR component according to claim 1, characterized in that: The T / R component simulator (10) further includes a motherboard (15), and the plurality of T / R component simulation units (11) are mounted on the motherboard (15).
3. The electronic load for simulating the electrical characteristics of a TR component according to claim 1, characterized in that: The T / R component simulator (10) further comprises a heat dissipation module (14) for dissipating heat for the T / R component simulation unit (11).
4. The electronic load for simulating the electrical characteristics of a TR component as claimed in claim 3, characterized in that: The heat dissipation module (14) is a liquid-cooled heat dissipation module, which fixes the T / R component simulation unit (11) through an embedded heat dissipation copper tube frame and dissipates heat for the T / R component simulation unit (11) through liquid cooling.
5. The electronic load for simulating the electrical characteristics of a TR component according to any one of claims 1 to 4, characterized in that: The high-speed MOS tube (111) is an N-type MOSFET.
6. The electronic load for simulating the electrical characteristics of a TR component as claimed in claim 5, characterized in that: The voltage regulating module (113) comprises a buck converter and a feedback resistor connected to the buck converter, and the adjustable voltage output by the power regulating module (113) is changed by adjusting the resistance value of the feedback resistor.
7. The electronic load for simulating the electrical characteristics of a TR component according to claim 6, characterized in that: The period of the buck converter is in the nanosecond order.
8. The electronic load for simulating the electrical characteristics of a TR component according to claim 6, characterized in that: The feedback resistor is a digital variable resistor with a serial peripheral interface. The digital variable resistor is connected to an analog controller (12) via the serial peripheral interface, and the resistance value of the digital variable resistor is changed by the analog controller (12).