Preparation method of optical information storage device and storage device

Abstract

The present disclosure provides a preparation method of an optical information storage device and a storage device, specifically relating to the field of semiconductor technology. The preparation method comprises: spin-coating photoresist on the surface of an inorganic wide bandgap material to form a first photoresist layer; exposing the first photoresist layer according to a first pattern; wherein first optical information is stored in the first pattern; developing the exposed first photoresist layer to generate a first mask; performing a first ion implantation on the inorganic wide bandgap material with the first mask to implant an implanted element as a luminescent color center into the inorganic wide bandgap material, wherein the implanted element directly replaces the element in the inorganic wide bandgap material to obtain a target device for storing optical information.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and more particularly, to a method for preparing an optical information storage device and the storage device. Background Art

[0002] In the information age, data storage has become a crucial foundation for the development of various industries. Currently, commonly used information storage media include magnetic disks and solid-state drives (SSDs), which pose risks of demagnetization and electrical leakage. However, information such as literary works, historical documents, and archival materials is infrequently accessed and requires long-term storage. Magnetic and electronic storage solutions are limited by storage lifespan and energy consumption, making them unsuitable for storing such information. Optical information storage, however, avoids these drawbacks.

[0003] Currently, commonly used optical information storage devices, such as optical discs, rely on spin-coating an organic material onto a substrate surface and then using lasers to induce a change in the organic material's refractive index to store optical information. This storage method suffers from poor robustness due to the vulnerability of the organic material to damage. Furthermore, information is written via direct laser writing, which is not conducive to large-scale and rapid production.

[0004] Therefore, there is an urgent need for a method for preparing a high-density optical information storage device with large-scale production capability. Summary of the Invention

[0005] In view of this, the present disclosure provides a method for preparing an optical information storage device and the optical information storage device.

[0006] One aspect of the present disclosure provides a method for preparing an optical information storage device, comprising: spin-coating photoresist on the surface of an inorganic wide bandgap material to form a first photoresist layer; exposing the first photoresist layer according to a first pattern; wherein first optical information is stored in the first pattern; developing the exposed first photoresist layer to generate a first mask; performing a first ion implantation on the inorganic wide bandgap material with the first mask to implant an implanted element as a luminescent color center into the inorganic wide bandgap material, wherein the implanted element directly replaces the element in the inorganic wide bandgap material to obtain a target device for storing optical information.

[0007] According to an embodiment of the present disclosure, the inorganic wide bandgap material includes diamond, the implanted element includes rare earth ions, the energy range of the rare earth ions includes: 10-400 keV; the dose range of the rare earth ions includes: e 12 -e 15 ions / cm 2 .

[0008] According to an embodiment of the present disclosure, the inorganic wide bandgap material includes silicon, the implanted element includes carbon, the energy range of the carbon element includes: 10-400 keV; the dose range of the carbon element includes: e 13 -e 16 ions / cm 2 .

[0009] According to an embodiment of the present disclosure, the above method also includes: debonding the inorganic wide bandgap material after the first ion implantation to obtain the inorganic wide bandgap material after debonding; positioning the above inorganic wide bandgap material after debonding through an overlay process to obtain the positioned inorganic wide bandgap material; spin-coating the above positioned inorganic wide bandgap material with photoresist to form a second photoresist layer; exposing the above second photoresist layer according to a second pattern; wherein the second optical information is stored in the above second pattern; developing the exposed second photoresist layer to generate a second mask; performing a second ion implantation on the inorganic wide bandgap material with the second mask to obtain the above target device; wherein the type of implanted element of the second ion implantation is different from that of the first ion implantation and / or the dosage of the implanted element is different.

[0010] According to an embodiment of the present disclosure, the second ion implantation and the first ion implantation have different implantation elements, so as to achieve spectrum multiplexing of the optical information storage device.

[0011] According to an embodiment of the present disclosure, the second ion implantation has a different dose of implanted elements from the first ion implantation, so as to achieve multiplexing of fluorescent grayscales of the optical information storage device.

[0012] According to an embodiment of the present disclosure, the method further includes: annealing the inorganic wide bandgap material after the first ion implantation to enhance the fluorescence effect generated by the implanted element as a luminescent color center in the inorganic wide bandgap material.

[0013] According to an embodiment of the present disclosure, the above method also includes: peeling off the inorganic wide bandgap material after annealing to generate an inorganic thin film; stacking the above inorganic thin film in layers to obtain the above target device; wherein the above inorganic thin film is used as an information storage substrate.

[0014] According to an embodiment of the present disclosure, information is read out from the optical information storage device by a confocal fluorescence microscope imaging method.

[0015] Another aspect of the present disclosure provides an optical information storage device prepared according to the above method.

[0016] According to the embodiments of the present disclosure, the mask preparation process can be used to realize large-scale preparation of optical information storage devices, overcoming the problem that the laser direct writing method cannot quickly prepare storage devices on a large scale. By using the method of ion implantation, the implanted element is implanted as a luminescent color center into the inorganic wide bandgap material, and the implanted element directly replaces the element in the inorganic wide bandgap material, and the element is replaced and retained at the atomic level, which can realize high-density optical information storage at the atomic level. The problem that the organic substance spin-coated on the surface of the device is easily destroyed is overcome. The implanted element is injected into the inorganic wide bandgap material to form a luminescent color center, which improves the robustness of the optical information storage device. Based on the semiconductor chip processing technology, the luminescent color center is prepared in the solid system of the inorganic wide bandgap material to realize high-density optical information storage, and the high-density optical information storage technology is combined with the semiconductor chip processing technology to provide a new method for the optical information storage industry. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0018] Figure 1 A flow chart schematically illustrates a method for preparing an optical information storage device according to an embodiment of the present disclosure;

[0019] Figure 2 Schematically shows a schematic diagram of a first mask in a method for manufacturing an optical information storage device according to an embodiment of the present disclosure;

[0020] Figure 3 Schematically shows an information readout result diagram of an optical information storage device according to an embodiment of the present disclosure;

[0021] Figure 4 A flow chart schematically illustrates a method for preparing an optical information storage device according to another embodiment of the present disclosure; and

[0022] Figure 5 The figure schematically shows a process flow diagram of preparing an optical information storage device according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0023] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present disclosure. In the detailed description below, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0024] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise," "include," etc. used herein indicate the presence of the features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0025] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0026] When expressions such as "at least one of A, B, and C, etc." are used, they should generally be interpreted in accordance with the meaning commonly understood by those skilled in the art (for example, "a system having at least one of A, B, and C" should include but is not limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc.).

[0027] In related technologies, optical information storage is mostly achieved through direct laser writing. The density of information written is also limited by the optical diffraction limit, which affects the resolution of information written and is not conducive to large-scale production. Currently, related technologies include the following four optical information storage systems.

[0028] 1. Metal nanorod surface plasmon resonance system. Through the surface plasmon resonance characteristics of gold nanorods, an optical information storage technology with five dimensions, including three spatial dimensions, wavelength, and polarization, is realized. This type of method writes information by using a laser pulse-induced temperature increase, causing the selected nanorods to deform into shorter rods or spherical particles when the melting point is reached. The information is read out through two-photon luminescence induced by longitudinal surface plasmon resonance. Due to the disadvantages of water solubility, poor thermal stability, and slow single-point writing speed, the metal nanorod surface plasmon resonance system is not suitable for storing information that requires long-term storage.

[0029] 2. Graphene-graphene oxide system. By controlling the intensity of the photoreduction of graphene oxide, refractive index changes of the order of 0.1-0.01 can be achieved. Combined with the fluorescent properties of graphene oxide polymers, this provides a new approach for utilizing this system to prepare optical information storage devices. This approach relies on far-field super-resolution writing technology. The energy transfer of rare-earth-doped upconversion nanoparticles triggers the reduction of graphene oxide to graphene, thereby enabling optical information writing with a spatial resolution of 50nm. For graphene-graphene oxide systems, since graphene and graphene oxide are inherently two-dimensional materials, the introduction of external forces and other factors can easily damage the storage medium, resulting in poor robustness of information storage.

[0030] 3. Thermofluorescence system. In the field of optical information storage, the thermofluorescence system utilizes the thermofluorescence phenomenon of trapped states to store optical information. It is a unique optical information storage method and also has the characteristic of "burn after reading". Because thermofluorescence readout requires a one-time readout through heating, it lacks the high spatial resolution of confocal readout, thus limiting storage density.

[0031] 4. Optical information storage methods that exceed the optical diffraction limit primarily utilize an information writing method based on inner-circle excitation and outer-circle suppression, achieving super-resolution writing by introducing Gaussian-Laguerre beams. Writing individual information voxels through point-by-point focusing takes a long time, requiring 100ms, and results in poor voxel morphology uniformity.

[0032] The current optical information storage method has the following defects to be solved:

[0033] 1. Weak large-scale production capabilities. Most optical information storage methods based on laser direct writing use a focused laser beam to create information voxels using the multi-photon nonlinear effect generated at the focal point. This single-point writing method takes a long time to prepare and is not conducive to large-scale production.

[0034] 2. Low information storage density. Based on laser direct writing to prepare information voxels, the storage density is limited by the optical diffraction limit, and therefore the storage density is also limited.

[0035] 3. Poor voxel preparation uniformity. When using materials with optical switching properties for information storage and Gaussian-Laguerre light for super-resolution information writing, the uniformity of the information voxels is poor. It is difficult to prepare information voxels with completely consistent fluorescence properties, which is prone to bit errors.

[0036] 4. High energy requirements for voxel preparation: When using Gaussian-Laguerre light for super-resolution information writing, higher-energy pulsed lasers are required for voxel preparation, but high-power pulsed lasers are expensive.

[0037] 5. Poor robustness of storage media. Storage solutions such as metal nanorod surface plasmon resonance systems and graphene-graphene oxide systems rely on coating metal rods on the substrate surface or using two-dimensional materials. These storage systems suffer from poor water solubility, acid and alkali resistance, and poor robustness, which can easily lead to information loss in harsh environments.

[0038] The present disclosure provides a method for preparing an optical information storage device and a storage device, in order to at least partially solve the above-mentioned defects.

[0039] An embodiment of the present disclosure provides a method for preparing an optical information storage device, comprising: spin-coating photoresist on the surface of an inorganic wide bandgap material to form a first photoresist layer; exposing the first photoresist layer according to a first pattern; wherein first optical information is stored in the first pattern; developing the exposed first photoresist layer to generate a first mask; performing a first ion implantation on the inorganic wide bandgap material with the first mask to implant the implanted element as a luminescent color center into the inorganic wide bandgap material, wherein the implanted element directly replaces the element in the inorganic wide bandgap material to obtain a target device for storing optical information.

[0040] The present disclosure utilizes a mask preparation process to enable large-scale production of optical information storage devices. By using ion implantation to store optical information, the information storage density is not limited by the optical diffraction limit, and storage accuracy can reach the atomic level. The information voxels stored using ion implantation are highly stable, uniform, and less prone to bit errors. The energy required to prepare the information voxels is very low. The implanted elements are implanted into the inorganic wide-bandgap material, giving the optical information storage device high robustness and an extremely long storage life.

[0041] The present disclosure applies semiconductor device manufacturing processes and micro-nanofabrication processes to the storage of optical information. Storage devices manufactured using micro-nanofabrication processes mostly rely on electrical and magnetic technologies for storage, such as USB flash drives, magnetic disks, and hard drives, and have not yet been applied to the storage of optical information. Furthermore, ion implantation in semiconductor manufacturing processes is mostly used to modify the carrier concentration of the substrate material. The implanted elements used in the ion implantation of the present disclosure possess fluorescent properties in the substrate material, such as implanting rare earth ions into rare earth-doped crystals, which exhibit fluorescent properties.

[0042] Figure 1 The flowchart of the method for preparing the optical information storage device according to the embodiment of the present disclosure is schematically shown.

[0043] like Figure 1 As shown, the method includes operations S101 to S104.

[0044] In operation S101 , a first photoresist layer is formed by spin-coating a surface of the inorganic wide bandgap material.

[0045] In operation S102 , the first photoresist layer is exposed according to a first pattern.

[0046] In operation S103 , the exposed first photoresist layer is developed to generate a first mask.

[0047] In operation S104 , a first ion implantation is performed on the inorganic wide bandgap material with the first mask to obtain a target device for storing optical information.

[0048] According to the embodiments of the present disclosure, inorganic wide bandgap materials are used as information storage media, that is, as substrates, including the following materials: rare earth-doped crystals, such as YAG (yttrium aluminum garnet), YSO (yttrium silicate crystal), YVO4 (yttrium vanadate crystal), sapphire and other more than 300 kinds of rare earths; ion-doped bulk materials; wide bandgap semiconductor materials such as diamond and silicon carbide; narrow bandgap semiconductor materials such as silicon; perovskite materials; and Group III and V semiconductor materials such as quantum dots.

[0049] According to an embodiment of the present disclosure, the spin-on photoresist includes photoresist, electron beam glue, and ultraviolet glue.

[0050] According to an embodiment of the present disclosure, the first optical information is stored in a first pattern, and the first photoresist layer can be patterned exposed according to the first pattern by an electron beam exposure method.

[0051] According to an embodiment of the present disclosure,

[0052] According to an embodiment of the present disclosure, the exposed first photoresist layer may be placed in a developer for development to generate a first mask.

[0053] According to an embodiment of the present disclosure, the method of generating the first mask by patterned exposure may also include the following methods: two-photon and / or multi-photon laser direct writing based on nonlinear optics; ultraviolet laser direct writing; electron beam exposure; focused ion beam exposure; large-scale ultraviolet light exposure through a mask plate.

[0054] According to embodiments of the present disclosure, an implanted element is implanted as a luminescent color center into an inorganic wide bandgap material. The inorganic wide bandgap material is then subjected to a first ion implantation to produce fluorescent luminescent points that serve as information storage voxels. By implanting the implanted element as a luminescent color center into the inorganic wide bandgap material, the implanted element directly replaces an element in the inorganic wide bandgap material, resulting in a target device for storing optical information.

[0055] For example, inorganic wide bandgap material diamond is used as the substrate, and nitrogen is implanted to produce diamond nitrogen vacancy defect color centers.

[0056] For example, inorganic wide bandgap material silicon is used as the substrate, and carbon elements are injected to produce T color centers.

[0057] For example, the inorganic wide bandgap material YAG (yttrium aluminum garnet) is used as a substrate, rare earth ions are implanted, and the rare earth ions replace the Y in YAG (yttrium aluminum garnet).

[0058] According to the embodiments of the present disclosure, the mask preparation process can be used to achieve large-scale production of optical information storage devices. Using ion implantation to store optical information, the information storage density is not limited by the optical diffraction limit, and the storage accuracy can reach the atomic level. Using ion implantation to store optical information, the information voxels are highly stable and uniform, and are less prone to bit errors. The energy required to prepare the information voxels is very low. The implanted elements are injected into the inorganic wide bandgap material, making the optical information storage device highly robust and having an extremely long storage life.

[0059] According to an embodiment of the present disclosure, a first ion implantation is performed on an inorganic wide bandgap material with a first mask by using an ion implantation device, and the energy and dosage of the implanted elements need to be strictly controlled during the implantation.

[0060] According to an embodiment of the present disclosure, the portion of the first mask with photoresist will block the injected elements, so that the injected elements with specific energy will stay inside the photoresist; the portion of the first mask without photoresist will allow the injected elements to directly enter the interior of the inorganic wide bandgap material and stay on the surface of the inorganic wide bandgap material.

[0061] According to an embodiment of the present disclosure, the first mask uses photoresist. The photoresist with a thickness of 100 nanometers can block the implanted elements with energy below 60keV. The energy range of the implanted elements includes 10-60keV, for example, energy of 10keV, energy of 30keV, and energy of 60keV.

[0062] According to an embodiment of the present disclosure, a metal mask may also be used, and the energy range of the implanted elements may be expanded to include 10-400 keV, for example, energy of 10 keV, energy of 200 keV, and energy of 400 keV.

[0063] According to an embodiment of the present disclosure, the dose of the implanted element needs to ensure that the fluorescence emitted by the implanted element can be collected, and the dose range of the implanted element corresponds to the range from a single element to an element cluster.

[0064] According to an embodiment of the present disclosure, the inorganic wide bandgap material includes diamond, the implanted element includes rare earth ions, the energy range of the rare earth ions includes: 10-400 keV; the dose range of the rare earth ions includes: e 12 -e 15 ions / cm 2 .

[0065] For example, the energy of the implanted rare earth ions is 10 keV, 30 keV, 60 keV, 200 keV, and 400 keV.

[0066] For example, the dose of implanted rare earth ions is e 12 ions / cm2 , the dose is e 13 ions / cm 2 , the dose is e 15 ions / cm 2 .

[0067] According to an embodiment of the present disclosure, the inorganic wide bandgap material includes silicon, the implanted element includes carbon, the energy range of the carbon element includes: 10-400 keV; the dose range of the carbon element includes: e 13 -e 16 ions / cm 2 .

[0068] For example, the energy of the implanted carbon element is 10 keV, 30 keV, 60 keV, 200 keV, and 400 keV.

[0069] For example, the dose of carbon element injected is e 13 ions / cm 2 , the dose is e 14 ions / cm 2 , the dose is e 16 ions / cm 2 .

[0070] According to the embodiments of the present disclosure, the energy required to prepare information voxels using ion implantation is very low. Implanted elements replace elements in inorganic wide-bandgap materials to complete the preparation of information voxels in storage devices. The energy range of the implanted elements is 10-400 keV. In contrast, the pulsed laser energy required for information writing using Gaussian-Laguerre light is 10-1000 GeV.

[0071] According to an embodiment of the present disclosure, the inorganic wide bandgap material after the first ion implantation is subjected to annealing treatment to enhance the fluorescence effect generated by the implanted elements as luminescent color centers in the inorganic wide bandgap material.

[0072] According to the embodiments of the present disclosure, appropriate parameters such as annealing atmosphere, annealing temperature, and annealing time are selected based on the properties of the inorganic wide bandgap material and the injected element, so as to optimize the fluorescence effect of the injected element as a luminescent color center in the inorganic wide bandgap material.

[0073] For example, inorganic wide bandgap material diamond is used as the substrate, and nitrogen elements are injected to produce NV color centers. Nitrogen atoms replace carbon atoms in the inorganic wide bandgap material, and nitrogen vacancy color centers are produced after annealing.

[0074] According to an embodiment of the present disclosure, information is read from an optical information storage device by using a confocal fluorescence microscope imaging method, thereby completing the entire process of writing, storing, and reading optical information.

[0075] According to the embodiments of the present disclosure, the methods for information readout include the following: laser scanning confocal readout; wide-field fluorescence readout; super-resolution readout such as excited state depletion; structured light illumination readout; near-field optical readout; upconversion microscopy readout; and two-photon microscopy readout.

[0076] Figure 2 The figure schematically shows a first mask in the method for manufacturing an optical information storage device according to an embodiment of the present disclosure.

[0077] Figure 3 The diagram schematically shows the information readout result of the optical information storage device according to the embodiment of the present disclosure.

[0078] According to an embodiment of the present disclosure, an inorganic wide bandgap material YAG (yttrium aluminum garnet) is used as an information storage medium, single-sided fine polishing is performed, and a YAG (yttrium aluminum garnet) block is used as a substrate.

[0079] According to the embodiment of the present disclosure, the mask is prepared by electron beam lithography, and electron beam photoresist is spin-coated on the surface of the substrate with a thickness of 100 nm. Patterned exposure and development are performed according to the first pattern to generate a first mask. The schematic diagram of the first mask is shown in FIG. Figure 2 shown.

[0080] According to an embodiment of the present disclosure, a first ion implantation is performed on a substrate with a first mask, wherein the implanted element is Ce ions, the implantation energy is 30 keV, and the implantation dose is 1.5×10 15 ions / cm 2 .

[0081] According to an embodiment of the present disclosure, the substrate after the first ion implantation is subjected to an annealing treatment, the annealing atmosphere is an air atmosphere, the annealing temperature is 1200° C., and the annealing time is 8 hours.

[0082] According to the embodiment of the present disclosure, information is read out using a confocal fluorescence microscope, the excitation wavelength of the readout platform is selected to be 450nm, and fluorescence in the 475nm-650nm band is collected for imaging. The information readout results are as follows: Figure 3 shown.

[0083] Figure 4 The flowchart schematically shows a method for preparing an optical information storage device according to another embodiment of the present disclosure.

[0084] like Figure 4 As shown, the method includes operations S401 to S410.

[0085] In operation S401 , a photoresist is spin-coated on a surface of the inorganic wide bandgap material to form a first photoresist layer.

[0086] In operation S402 , the first photoresist layer is exposed according to a first pattern.

[0087] In operation S403 , the exposed first photoresist layer is developed to generate an inorganic wide bandgap material with a first mask.

[0088] In operation S404 , a first ion implantation is performed on the inorganic wide bandgap material with the first mask.

[0089] In operation S405 , the inorganic wide bandgap material after the first ion implantation is subjected to a debonding process to obtain a debonded inorganic wide bandgap material.

[0090] In operation S406 , the inorganic wide bandgap material after the resist is removed is positioned through an overlay process to obtain a positioned inorganic wide bandgap material.

[0091] In operation S407 , the positioned inorganic wide bandgap material is spin-coated as a photoresist to form a second photoresist layer.

[0092] In operation S408 , the second photoresist layer is exposed according to a second pattern; wherein the second optical information is stored in the second pattern.

[0093] In operation S409 , the exposed second photoresist layer is developed to generate a second mask.

[0094] In operation S410 , a second ion implantation is performed on the inorganic wide bandgap material with the second mask to obtain a target device.

[0095] According to an embodiment of the present disclosure, the desmearing process may be a chemical cleaning method, a specific wet etching method, or a specific dry etching method.

[0096] According to an embodiment of the present disclosure, the second ion implantation and the first ion implantation have different implantation element types and / or different implantation element dosages.

[0097] For example, an inorganic wide bandgap material YAG (yttrium aluminum garnet) is selected as the substrate. After the first mask is generated on the substrate, the first ion implantation is performed. The implanted element is the rare earth ion cerium. The energy of the implanted element is 60 keV and the implantation dose is 1.5×10 15 ions / cm 2 After desmearing and overprinting, a second mask is generated on the substrate after the first ion implantation, and then the second ion implantation is performed. The implanted element is the rare earth ion praseodymium, the implanted element energy is 60keV, and the implantation dose is 1.5×10 15 ions / cm 2 ; Get the target device.

[0098] According to an embodiment of the present disclosure, the first mask and the second mask represent different optical information that needs to be written into the inorganic wide bandgap material.

[0099] According to an embodiment of the present disclosure, a laser with a wavelength of 450 nm is used to excite the target device, and fluorescence in the 475 nm-650 nm band is collected, so that the signal of the implanted element cerium of the first ion implantation can be read out, that is, the optical information of the first ion implantation; a laser with a wavelength of 488 nm is used to excite the target device, and fluorescence in the 300 nm-450 nm band is collected, so that the signal of the implanted element praseodymium of the second ion implantation can be read out, that is, the optical information of the second ion implantation.

[0100] According to the embodiments of the present disclosure, the second ion implantation uses different elements and / or different doses than the first ion implantation, resulting in different fluorescent colors and grayscales. This second ion implantation allows for different information to be read out when lasers of different wavelengths are used to excite the target device, enriching the fluorescence effect of the luminescent color center. This also allows for higher storage density in the spatial dimension, expanding the storage density of optical information storage devices.

[0101] According to an embodiment of the present disclosure, the second ion implantation has a different type of implantation element from the first ion implantation to achieve spectrum multiplexing of the optical information storage device.

[0102] According to the embodiments of the present disclosure, spectral multiplexing refers to using different laser wavelengths to excite injected elements in the same spatial region, generating different fluorescence signals. The fluorescence signals originate from different types of injected elements, and different injected elements produce different fluorescence colors when excited by different laser wavelengths.

[0103] For example, on a YAG (yttrium aluminum garnet) substrate, the first ion implantation is performed, the implanted element is praseodymium, the implanted element energy is 30 keV, and the implanted element dose is 1.5×10 15 ions / cm 2 ; The second ion implantation was performed, the implanted element was cerium, the implanted element energy was 30keV, and the implanted element dose was 1.5×10 15 ions / cm 2 In multiplexing, the laser wavelength used to excite praseodymium is 488 nm, and the laser wavelength used to excite cerium is 450 nm.

[0104] According to an embodiment of the present disclosure, the second ion implantation has a different dose of implanted elements from the first ion implantation to achieve multiplexing of fluorescent grayscales of the optical information storage device.

[0105] According to the embodiments of the present disclosure, fluorescence grayscale multiplexing refers to using the same laser wavelength to excite the injected elements in the same spatial region to generate different fluorescence signals. The same injected element, but different injection doses, will produce different fluorescence grayscales.

[0106] According to an embodiment of the present disclosure, different doses of rare earth ions are successively implanted on a YAG (yttrium aluminum garnet) substrate. When using four grayscales, four implantations are required, using different masks, and the masks need to be designed according to the four grayscales.

[0107] For example, on a YAG (yttrium aluminum garnet) substrate, four ion implantations are performed, the implanted element is cerium, the implanted element energy is 60 keV, and the implanted element dose of the first ion implantation is 3×10 14 ions / cm 2 The dose of the implanted element in the second ion implantation is 6×10 14 ions / cm 2 The dose of the implanted element in the third ion implantation is 9×10 14 ions / cm 2 The dose of the implanted element in the fourth ion implantation is 1.2×10 15 ions / cm 2 A laser with a wavelength of 450 nm was used to excite the target device and collect fluorescence in the 475 nm-650 nm band.

[0108] According to the embodiments of the present disclosure, the fluorescence intensity has a proportional relationship of 1-4 times. When reading information using a confocal fluorescence microscope, different doses of the injected element correspond to different fluorescence counts at the injection site, which can be inverted to obtain the original information. This further expands the storage density of optical information storage devices.

[0109] According to embodiments of the present disclosure, methods for improving information storage density also include the following:

[0110] 1. Utilize the polarization characteristics of light to achieve polarization-scale multiplexing;

[0111] 2. Utilize the lifetime characteristics of different ion excited states to achieve time-scale multiplexing;

[0112] 3. By using different concentrations of injected ions or different hole sizes in the mask, different numbers of ions are excited at the optical diffraction limit, resulting in different fluorescence brightness at each point. The fluorescence brightness is converted into grayscale to achieve multiplexing of fluorescence grayscale scales;

[0113] 4. Use exposure masks to make circular, triangular, square and other patterns to achieve pattern multiplexing.

[0114] According to an embodiment of the present disclosure, the inorganic wide bandgap material after annealing is peeled off to generate an inorganic thin film; the inorganic thin film is stacked in layers to obtain a target device; wherein the inorganic thin film serves as an information storage substrate.

[0115] According to the embodiments of the present disclosure, the injected element produces a luminescent color center effect only in the surface layer of the inorganic wide bandgap material. This surface layer refers to the surface layer of the inorganic wide bandgap material at a depth of micrometers, for example, 10 μm. Therefore, the surface layer of the inorganic wide bandgap material after annealing can be stripped to produce an inorganic thin film.

[0116] According to an embodiment of the present disclosure, after the first ion implantation and annealing, or after the second ion implantation and annealing, or after multiple ion implantations and annealing, an inorganic thin film is prepared and used as an information storage substrate for interlayer stacking.

[0117] According to the embodiments of the present disclosure, the interlayer stacking methods include the following: Smart Cut technology; wet transfer of thin films and two-dimensional materials; mechanical peeling and transfer of thin films and two-dimensional materials; thin film material bonding; substrate CVD, ALD, evaporation, magnetic co-sputtering and other regrowth methods.

[0118] Figure 5 The figure schematically shows a process flow diagram of preparing an optical information storage device according to an embodiment of the present disclosure.

[0119] like Figure 5 As shown, the first step is to prepare a mask by patterned exposure; the second step is to store optical information in the inorganic wide bandgap material by ion implantation into the inorganic wide bandgap material substrate with the mask; the third step is to remove the glue and anneal; the fourth step is to overlay the inorganic wide bandgap erased substrate, change the type and dose of implanted ions, and then perform ion implantation; the fifth step is to complete the interlayer stacking using Smart Cut technology.

[0120] like Figure 5 As shown, Smart Cut technology is used to peel off inorganic thin films from an inorganic wide bandgap material substrate and then stack them. Each layer of inorganic thin film stores different optical information, and each layer produces a different fluorescence effect.

[0121] According to the embodiments of the present disclosure, the optical information storage device obtained by interlayer stacking expands the storage space dimension from two dimensions to three dimensions, making the pattern information read out richer and further improving the storage density of the optical information storage device.

[0122] According to the embodiments of the present disclosure, optical information storage units can be prepared quickly and on a large scale through semiconductor chip preparation processes such as mask preparation, ion implantation, annealing and etching, as well as key and mature processes of micro-nano processing. Through semiconductor chips and micro-nano processing technology, the size of storage voxels can be increased from the optical diffraction limit to the nanometer scale, and the storage voxels have better uniformity, which can reduce the bit error rate, thereby achieving high-density, large-capacity optical information storage. At the same time, the ion implantation method improves the robustness of information storage and has an ultra-long storage life. Therefore, the present disclosure provides a new method for large-scale and rapid preparation of highly stable, long-life, and large-capacity optical information storage devices.

[0123] The above describes the embodiments of the present disclosure. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of the present disclosure. Although each embodiment has been described separately above, this does not mean that the measures in each embodiment cannot be advantageously used in combination. Without departing from the scope of the present disclosure, those skilled in the art may make various substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. A method for preparing an optical information storage device, characterized in that: include: Spin-coating optical resin on the surface of the inorganic wide bandgap material to form a first optical resin layer; exposing the first photoresist layer according to a first pattern; wherein first optical information is stored in the first pattern; developing the exposed first photoresist layer to generate a first mask; A first ion implantation is performed on the inorganic wide bandgap material with a first mask to implant an implanted element as a luminescent color center into the inorganic wide bandgap material. The implanted element directly replaces the element in the inorganic wide bandgap material to obtain a target device for storing optical information.

2. The method for preparing an optical information storage device according to claim 1, wherein: The inorganic wide bandgap material includes diamond, the implanted element includes rare earth ions, the energy range of the rare earth ions includes: 10-400keV; the dosage range of the rare earth ions includes: e 12 -e 15 ions / cm 2 .

3. The method for preparing an optical information storage device according to claim 1, wherein: The inorganic wide bandgap material includes silicon, the implanted element includes carbon, the energy range of the carbon element includes: 10-400 keV; the dose range of the carbon element includes: e 13 -e 16 ions / cm 2 .

4. The method for preparing an optical information storage device according to claim 1, wherein: Also includes: performing a debonding treatment on the inorganic wide bandgap material after the first ion implantation to obtain a debonded inorganic wide bandgap material; Positioning the inorganic wide bandgap material after the debonding through an overlay process to obtain a positioned inorganic wide bandgap material; Spin-coating the positioned inorganic wide bandgap material with a photoresist to form a second photoresist layer; exposing the second photoresist layer according to a second pattern; wherein second optical information is stored in the second pattern; developing the exposed second photoresist layer to generate a second mask; A second ion implantation is performed on the inorganic wide bandgap material with a second mask to obtain the target device; wherein the second ion implantation is different from the first ion implantation in terms of the type of implanted element and / or the dose of the implanted element.

5. The method for preparing an optical information storage device according to claim 4, wherein: The second ion implantation has an implantation element of a different type from that of the first ion implantation, so as to achieve spectrum multiplexing of the optical information storage device.

6. The method for preparing an optical information storage device according to claim 4, wherein: The second ion implantation has a different dose of an implanted element from that of the first ion implantation, so as to achieve multiplexing of fluorescent grayscales of the optical information storage device.

7. The method for preparing an optical information storage device according to claim 1, wherein: Also includes: The inorganic wide bandgap material after the first ion implantation is subjected to annealing treatment to enhance the fluorescence effect generated by the implanted element as a luminescent color center in the inorganic wide bandgap material.

8. The method for preparing an optical information storage device according to claim 7, wherein: Also includes: peeling off the inorganic wide bandgap material after annealing to generate an inorganic thin film; The inorganic thin films are stacked in layers to obtain the target device; wherein the inorganic thin films serve as information storage substrates.

9. The method for preparing an optical information storage device according to any one of claims 1 to 8, characterized in that: Information is read out from the optical information storage device by a confocal fluorescence microscope imaging method.

10. An optical information storage device prepared by the method according to any one of claims 1-8.

Images