IGBT and silicon carbide MOSFET hybrid parallel power module, motor controller and vehicle

Abstract

The invention relates to the technical field of semiconductors, particularly provides an IGBT and silicon carbide MOSFET hybrid parallel power module, a motor controller and a vehicle, and aims to solve the problems of high cost and low yield of a power module manufactured by a full silicon carbide MOSFET chip. In order to achieve the purpose, the IGBT and silicon carbide MOSFET hybrid parallel power module comprises a mounting base, semiconductor modules distributed in an array mode are arranged on the mounting base, each semiconductor module comprises an upper bridge arm mechanism, a lower bridge arm mechanism and a substrate, and the upper bridge arm mechanisms and the lower bridge arm mechanisms are connected in series to form a half-bridge structure; the upper bridge arm mechanism comprises an IGBT chipset, a silicon carbide MOSFET chipset and an upper bridge gate signal terminal; a gate of the silicon carbide MOSFET chip of the upper bridge arm mechanism and a gate of the IGBT chip are connected with the upper bridge gate signal terminal; the lower bridge arm mechanism comprises an IGBT chip set, a silicon carbide MOSFET chip set and a lower bridge grid signal terminal. A grid of the silicon carbide MOSFET chip of the lower bridge arm mechanism and a grid of the IGBT chip are connected with the lower bridge grid signal terminal.

Description

Background Art

[0002] In the field of new energy vehicles, especially for 800V high-voltage systems, the main drive inverter often uses silicon-based IGBT devices or silicon carbide MOSFET devices as its core power conversion elements. Silicon carbide MOSFET is known for its higher power density and lower switching loss characteristics. These advantages enable the motor controller to achieve higher efficiency and peak power output. At the same time, with the continuous advancement of silicon carbide MOSFET power module packaging materials and technologies, these modules have also shown longer service life and higher reliability. However, the popularization of silicon carbide MOSFET chips still faces challenges: its production is limited by the complex manufacturing process of silicon carbide substrates, which makes it difficult to increase production on a large scale and meet the rapidly growing needs of the new energy vehicle market; coupled with the high cost of silicon carbide MOSFET chips, the cost of the entire vehicle is further increased.

[0003] Accordingly, the art needs a new power module solution to solve the above problems. Summary of the invention

[0004] In order to overcome the above-mentioned defects, the present application is proposed to solve or at least partially solve the technical problems that the output of silicon carbide MOSFET chips is difficult to increase on a large scale and meet the growing demand of the new energy vehicle market due to the complex manufacturing process of silicon carbide substrates. In addition, the high cost of silicon carbide MOSFET chips further leads to an increase in the cost of the entire vehicle.

[0005] In a first aspect, a power module of mixed parallel connection of IGBT and silicon carbide MOSFET is provided, comprising a mounting base, on which semiconductor modules distributed in an array are arranged, the semiconductor modules comprising an upper bridge arm mechanism, a lower bridge arm mechanism and a substrate, the upper bridge arm mechanism and the lower bridge arm mechanism are connected in series to form a half-bridge structure; the upper bridge arm mechanism comprises an IGBT chipset, a silicon carbide MOSFET chipset and an upper bridge gate signal terminal, the gate of the silicon carbide MOSFET chip of the upper bridge arm mechanism and the gate of the IGBT chip are connected to the upper bridge gate signal terminal; the lower bridge arm mechanism comprises an IGBT chipset, a silicon carbide MOSFET chipset and a lower bridge gate signal terminal, the gate of the silicon carbide MOSFET chip of the lower bridge arm mechanism and the gate of the IGBT chip are connected to the lower bridge gate signal terminal.

[0006] In a technical solution of the above-mentioned power module in which IGBT and silicon carbide MOSFET are mixed in parallel, the upper bridge arm mechanism includes a first common signal terminal and an output terminal, and the source of the silicon carbide MOSFET chip of the upper bridge arm mechanism and the emitter of the IGBT chip are connected to the first common signal terminal and the output terminal.

[0007] In a technical solution of the above-mentioned power module in which IGBT and silicon carbide MOSFET are mixed in parallel, the upper bridge arm mechanism includes a second common signal terminal and a positive input terminal, and the drain of the silicon carbide MOSFET chip of the upper bridge arm mechanism and the collector of the IGBT chip are connected to the second common signal terminal and the positive input terminal.

[0008] In a technical solution of the above-mentioned power module in which IGBT and silicon carbide MOSFET are mixed in parallel, the silicon carbide MOSFET chipset of the upper bridge arm mechanism includes at least three silicon carbide MOSFET chips distributed in an array, the IGBT chipset of the upper bridge arm mechanism includes at least three IGBT chips distributed in an array, the silicon carbide MOSFET chipset of the upper bridge arm mechanism is arranged close to the first side of the substrate, and the IGBT chipset of the upper bridge arm mechanism is arranged away from the first side of the substrate; or, the silicon carbide MOSFET chipset of the lower bridge arm mechanism includes at least three silicon carbide MOSFET chips distributed in an array, the IGBT chipset of the lower bridge arm mechanism includes at least three IGBT chips distributed in an array, the silicon carbide MOSFET chipset of the lower bridge arm mechanism is arranged close to the second side of the substrate, and the IGBT chipset of the lower bridge arm mechanism is arranged away from the second side of the substrate.

[0009] In a technical solution of the above-mentioned power module in which IGBT and silicon carbide MOSFET are mixed in parallel, the lower bridge arm mechanism includes a source signal terminal, the drain of the silicon carbide MOSFET chip of the lower bridge arm mechanism is connected to the source of the silicon carbide MOSFET chip of the upper bridge arm mechanism and the source signal terminal, and the collector of the IGBT chip of the lower bridge arm mechanism is connected to the emitter of the IGBT chip of the upper bridge arm mechanism and the source signal terminal.

[0010] In a technical solution of the above-mentioned power module in which IGBT and silicon carbide MOSFET are mixed in parallel, the lower bridge arm mechanism includes a third common signal terminal and a negative input terminal, and the source of the silicon carbide MOSFET chip and the emitter of the IGBT chip of the lower bridge arm mechanism are connected to the third common signal terminal and the negative input terminal.

[0011] In a technical solution of the above-mentioned power module with mixed parallel connection of IGBT and silicon carbide MOSFET, the substrate is a copper-clad ceramic substrate, the substrate is arranged on the mounting base, and the IGBT chipset and silicon carbide MOSFET chipset of the upper bridge arm mechanism and the lower bridge arm mechanism are arranged on the substrate.

[0012] In a technical solution of the above-mentioned power module in which IGBT and silicon carbide MOSFET are mixed and connected in parallel, the number of the semiconductor modules is at least three, and the at least three semiconductor modules are connected in parallel.

[0013] In a second aspect, a motor controller is provided, the motor controller comprising a power module in which the IGBT and the silicon carbide MOSFET are mixed and connected in parallel as described above.

[0014] In a third aspect, a vehicle is provided, comprising a motor controller as described above.

[0015] The above one or more technical solutions of the present application have at least one or more of the following beneficial effects:

[0016] The present application provides a power module in which IGBT and silicon carbide MOSFET are mixed and connected in parallel, comprising a mounting base, on which semiconductor modules distributed in an array are arranged, wherein the semiconductor modules comprise an upper bridge arm mechanism, a lower bridge arm mechanism and a substrate, wherein the upper bridge arm mechanism and the lower bridge arm mechanism are connected in series to form a half-bridge structure; the upper bridge arm mechanism comprises an IGBT chipset, a silicon carbide MOSFET chipset and an upper bridge gate signal terminal, wherein the gate of the silicon carbide MOSFET chip of the upper bridge arm mechanism and the gate of the IGBT chip are connected to the upper bridge gate signal terminal; the lower bridge arm mechanism comprises an IGBT chipset, a silicon carbide MOSFET chipset and a lower bridge gate signal terminal, wherein the gate of the silicon carbide MOSFET chip of the lower bridge arm mechanism and the gate of the IGBT chip are connected to the lower bridge gate signal terminal.

[0017] The design of the power module of the present application adopts a hybrid parallel scheme of IGBT chips and silicon carbide MOSFET chips, and uses IGBT chips to replace the scheme of making power modules with full silicon carbide MOSFET chips, thereby reducing the number of silicon carbide MOSFET chips in the power module, and effectively reducing the cost of the overall power module while ensuring efficiency and power. The upper and lower bridge arm mechanisms both include an IGBT chipset, a silicon carbide MOSFET chipset, and a gate signal terminal, and adopt a symmetrical structural layout, which helps to improve the overall performance of the power module in terms of electrical characteristics and thermal management, thereby ensuring the stability and reliability of the power module. In addition, the gate of the IGBT chip and the gate of the silicon carbide MOSFET chip share a gate signal terminal, and a single gate signal can be used to synchronously control the opening and closing of the two chips, which can simplify the circuit design and improve the synchronous control effect of the chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The disclosure of the present application will become easier to understand with reference to the accompanying drawings. It is easy for those skilled in the art to understand that these drawings are only for illustrative purposes and are not intended to limit the scope of protection of the present application. Among them:

[0019] Figure 1 It is a schematic structural diagram of a semiconductor module of a power module in which IGBT and silicon carbide MOSFET are mixed and connected in parallel according to an embodiment of the present application;

[0020] Figure 2 This is a circuit connection diagram of a semiconductor module of a power module in which IGBT and silicon carbide MOSFET are mixed and connected in parallel according to an embodiment of the present application;

[0021] Figure 3 It is a schematic structural diagram of a power module in which IGBT and silicon carbide MOSFET are mixed and connected in parallel according to another embodiment of the present application.

[0022] Reference numerals:

[0023] 10. Semiconductor module half-bridge topology; 100. Upper bridge arm structure; 200. Lower bridge arm mechanism; 300. Mounting base; 101. NTC structure; 103. Substrate; 201. Silicon carbide MOSFET chip of lower bridge arm mechanism 200; 202. IGBT chip of lower bridge arm mechanism 200; 210. Silicon carbide MOSFET chip of upper bridge arm mechanism 100; 220. IGBT chip of upper bridge arm mechanism 100; 203. Source signal terminal; 204. Lower bridge gate signal terminal; 205. Third common signal terminal; 206. First common signal terminal; 207. Upper bridge gate signal terminal; 208. Second common signal terminal; 260. Positive input terminal; 270. Negative input terminal; 280. Output terminal. DETAILED DESCRIPTION

[0024] Some embodiments of the present application are described below with reference to the accompanying drawings. Those skilled in the art should understand that these embodiments are only used to explain the technical principles of the present application and are not intended to limit the protection scope of the present application.

[0025] In the description of the present application, "module" and "processor" may include hardware, software or a combination of the two. A module may include hardware circuits, various suitable sensors, communication ports, memory, and may also include software parts, such as program code, or a combination of software and hardware. The processor may be a central processing unit, a microprocessor, an image processor, a digital signal processor or any other suitable processor. The processor has data and / or signal processing functions. The processor may be implemented in software, hardware or a combination of the two. Computer-readable storage media include any suitable medium that can store program code, such as a disk, a hard disk, an optical disk, a flash memory, a read-only memory, a random access memory, etc. The term "A and / or B" means all possible combinations of A and B, such as only A, only B or A and B. The term "at least one A or B" or "at least one of A and B" has a similar meaning to "A and / or B" and may include only A, only B or A and B. The singular terms "one" and "the" may also include plural forms.

[0026] In the field of new energy vehicles, especially for 800V high-voltage systems, the main drive inverter often uses silicon-based IGBT devices or silicon carbide MOSFET devices as its core power conversion components. However, the production of silicon carbide MOSFET chips is limited by the complex manufacturing process of silicon carbide substrates, which makes it difficult to increase the output of silicon carbide MOSFET chips on a large scale and meet the growing demand of the new energy vehicle market. In addition, the high cost of silicon carbide MOSFET chips has further led to an increase in the cost of the entire vehicle.

[0027] To this end, the present application provides a power module in which IGBT and silicon carbide MOSFET are mixed in parallel, comprising a mounting base, on which semiconductor modules distributed in an array are arranged, the semiconductor modules comprising an upper bridge arm mechanism, a lower bridge arm mechanism and a substrate, the upper bridge arm mechanism and the lower bridge arm mechanism are connected in series to form a half-bridge structure; the upper bridge arm mechanism comprises an IGBT chipset, a silicon carbide MOSFET chipset and an upper bridge gate signal terminal, the gate of the silicon carbide MOSFET chip of the upper bridge arm mechanism and the gate of the IGBT chip are connected to the upper bridge gate signal terminal; the lower bridge arm mechanism comprises an IGBT chipset, a silicon carbide MOSFET chipset and a lower bridge gate signal terminal, the gate of the silicon carbide MOSFET chip of the lower bridge arm mechanism and the gate of the IGBT chip are connected to the lower bridge gate signal terminal.

[0028] The design of the power module of the present application adopts a hybrid parallel scheme of IGBT chips and silicon carbide MOSFET chips, and uses IGBT chips to replace the scheme of making power modules with full silicon carbide MOSFET chips, thereby reducing the number of silicon carbide MOSFET chips in the power module, and effectively reducing the cost of the overall power module while ensuring efficiency and power. The upper and lower bridge arm mechanisms both include an IGBT chipset, a silicon carbide MOSFET chipset, and a gate signal terminal, and adopt a symmetrical structural layout, which helps to improve the overall performance of the power module in terms of electrical characteristics and thermal management, thereby ensuring the stability and reliability of the power module. In addition, the gate of the IGBT chip and the gate of the silicon carbide MOSFET chip share a gate signal terminal, and a single gate signal can be used to synchronously control the opening and closing of the two chips, which can simplify the circuit design and improve the synchronous control effect of the chip.

[0029] See attached Figure 1 , Attachment Figure 2 , Figure 1 It is a schematic structural diagram of a semiconductor module of a power module in which IGBT and silicon carbide MOSFET are mixed and connected in parallel according to an embodiment of the present application; Figure 2 is a circuit connection diagram of a semiconductor module according to an embodiment of the present application.

[0030] In one embodiment, a power module in which IGBT and silicon carbide MOSFET are mixed in parallel includes a mounting base 300, on which semiconductor modules 10 distributed in an array are arranged, and the semiconductor modules 10 include an upper bridge arm mechanism 100, a lower bridge arm mechanism 200 and a substrate 103, and the upper bridge arm mechanism 100 and the lower bridge arm mechanism 200 are connected in series to form a half-bridge structure; the upper bridge arm mechanism 100 includes an IGBT chipset, a silicon carbide MOSFET chipset and an upper bridge gate signal terminal 207, and the gate of the silicon carbide MOSFET chip 210 of the upper bridge arm mechanism 100 and the gate of the IGBT chip 220 are connected to the upper bridge gate signal terminal 207; the lower bridge arm mechanism 200 includes an IGBT chipset, a silicon carbide MOSFET chipset and a lower bridge gate signal terminal 204, and the gate of the silicon carbide MOSFET chip 201 of the lower bridge arm mechanism 200 and the gate of the IGBT chip 202 are connected to the lower bridge gate signal terminal 204.

[0031] Specifically, the power module of IGBT and silicon carbide MOSFET mixed in parallel includes a mounting base 300, on which three semiconductor modules 10 are arranged. The structure of the semiconductor module 10 is as follows: Figure 1 As shown, the circuit topology of the semiconductor module 10 is as follows Figure 2 shown.

[0032] The semiconductor module 10 includes an upper bridge arm mechanism 100 and a lower bridge arm mechanism 200, wherein the upper bridge arm mechanism 100 includes three silicon carbide MOSFET chips 210 distributed in an array and three IGBT chips 220 distributed in an array, and the lower bridge arm mechanism 200 includes three silicon carbide MOSFET chips 201 distributed in an array and three IGBT chips 202 distributed in an array. The symmetrical arrangement of the upper bridge arm mechanism 100 and the lower bridge arm mechanism 200 can ensure uniform thermal and electrical distribution of the chips and better consistency.

[0033] The silicon carbide MOSFET chip 210 and the IGBT chip 220 of the upper bridge arm mechanism 100 share an upper bridge gate signal terminal 207, and the upper bridge gate signal terminal 207 is arranged on the first side close to the substrate 103; the silicon carbide MOSFET chip 201 and the IGBT chip 202 of the lower bridge arm mechanism 200 share a lower bridge gate signal terminal 204, and the lower bridge gate signal terminal 204 is arranged on the second side close to the substrate 103; the silicon carbide MOSFET chip and the IGBT chip share the gate signal terminal, so that the opening and closing of the two groups of chips can be controlled simultaneously by a single gate signal.

[0034] In one embodiment, the upper bridge arm mechanism 100 includes a first common signal terminal 206 and an output terminal 280 , and the source of the silicon carbide MOSFET chip 210 and the emitter of the IGBT chip 220 of the upper bridge arm mechanism 100 are connected to the first common signal terminal 206 and the output terminal 280 .

[0035] Specifically, the first common signal terminal 206 of the upper bridge arm mechanism 100 is the source (S) / emitter (E) common signal terminal of the silicon carbide MOSFET chip 210 and the IGBT chip 220 of the upper bridge arm mechanism 100, the source of the silicon carbide MOSFET chip 210 is connected to the first common signal terminal 206, the emitter of the IGBT chip 220 is connected to the first common signal terminal 206, and the first common signal terminal 206 is arranged on the first side close to the substrate 103.

[0036] The output terminal 280 of the upper bridge arm mechanism 100 is an AC power output terminal, which is arranged near the first side of the substrate 103 . The output terminal 280 is a common power connection terminal of the silicon carbide MOSFET chipset and the IGBT chipset, and is used to output AC power.

[0037] In one embodiment, the upper bridge arm mechanism 100 includes a second common signal terminal 208 and a positive input terminal 260 , and the drain of the silicon carbide MOSFET chip 210 and the collector of the IGBT chip 220 of the upper bridge arm mechanism 100 are connected to the second common signal terminal 208 and the positive input terminal 260 .

[0038] Specifically, the second common signal terminal 208 of the upper bridge arm mechanism 100 is a drain (D) / collector (C) common signal terminal of the silicon carbide MOSFET chip 210 and the IGBT chip 220 of the upper bridge arm mechanism 100. The drain of the silicon carbide MOSFET chip 210 of the upper bridge arm mechanism 100 is connected to the second common signal terminal 208, and the collector of the IGBT chip 220 of the upper bridge arm mechanism 100 is connected to the second common signal terminal 208. The second common signal terminal 208 is arranged on the first side close to the substrate 103.

[0039] The positive input terminal 260 of the upper bridge arm mechanism 100 is a DC positive power input terminal (DC+) of the upper bridge arm mechanism 100 . The positive input terminal 260 is arranged on the second side close to the substrate 103 . Two positive input terminals 260 are symmetrically arranged for inputting positive DC power.

[0040] In this embodiment, the DC power supply enters the system through the positive input terminal 260 and the negative input terminal 270. Driven by the control signal, the silicon carbide MOSFET chipset and the IGBT chipset are quickly turned on and off, and the power supply voltage and current are controlled by fast switching, thereby converting direct current (DC) into alternating current (AC) of corresponding frequency and voltage, and then outputting the AC through the output terminal 280 to drive the load that requires AC power.

[0041] In one embodiment, the silicon carbide MOSFET chipset of the upper bridge arm mechanism 100 includes at least three silicon carbide MOSFET chips 210 distributed in an array, the IGBT chipset of the upper bridge arm mechanism 100 includes at least three IGBT chips 220 distributed in an array, the silicon carbide MOSFET chipset of the upper bridge arm mechanism 100 is arranged close to the first side of the substrate 103, and the IGBT chipset of the upper bridge arm mechanism 100 is arranged away from the first side of the substrate 103; or, the silicon carbide MOSFET chipset of the lower bridge arm mechanism 200 includes at least three silicon carbide MOSFET chips 201 distributed in an array, the IGBT chipset of the lower bridge arm mechanism 200 includes at least three IGBT chips 202 distributed in an array, the silicon carbide MOSFET chipset of the lower bridge arm mechanism 200 is arranged close to the second side of the substrate 103, and the IGBT chipset of the lower bridge arm mechanism 200 is arranged away from the second side of the substrate 103.

[0042] Specifically, the silicon carbide MOSFET chipset of the upper bridge arm mechanism 100 includes three silicon carbide MOSFET chips 210 distributed in an array, and the silicon carbide MOSFET chipset is arranged on a first side close to the substrate 103; the IGBT chipset of the upper bridge arm mechanism 100 includes three IGBT chips 220 distributed in an array, and the IGBT chipset is arranged on a first side away from the substrate 103, and the first side is a side close to the output terminal 280.

[0043] The silicon carbide MOSFET chipset of the lower bridge arm mechanism 200 includes three silicon carbide MOSFET chips 201 distributed in an array, and the silicon carbide MOSFET chipset is arranged close to the second side of the substrate 103; the IGBT chipset of the lower bridge arm mechanism 200 includes three IGBT chips 202 distributed in an array, and the IGBT chipset is arranged away from the second side of the substrate 103, and the second side is the side close to the positive input terminal 260 and the negative input terminal 270.

[0044] In one embodiment, the lower bridge arm mechanism 200 includes a source signal terminal 203, the drain of the silicon carbide MOSFET chip 201 of the lower bridge arm mechanism 200 is connected to the source of the silicon carbide MOSFET chip 210 of the upper bridge arm mechanism 100 and the source signal terminal 203, and the collector of the IGBT chip 202 of the lower bridge arm mechanism 200 is connected to the emitter of the IGBT chip 220 of the upper bridge arm mechanism 100 and the source signal terminal 203.

[0045] Specifically, the drain of the silicon carbide MOSFET chip 201 of the lower bridge arm mechanism 200 is connected in series with the source of the silicon carbide MOSFET chip 210 of the upper bridge arm mechanism 100 and the source signal terminal 203; the collector of the IGBT chip 202 of the lower bridge arm mechanism 200 is connected in series with the emitter of the IGBT chip 220 of the upper bridge arm mechanism 100 and the source signal terminal 203.

[0046] In one embodiment, the lower bridge arm mechanism 200 includes a third common signal terminal 205 and a negative input terminal 270 , and the source of the silicon carbide MOSFET chip 210 and the emitter of the IGBT chip 220 of the lower bridge arm mechanism 200 are connected to the third common signal terminal 205 and the negative input terminal 270 .

[0047] Specifically, the third common signal terminal 205 of the lower bridge arm mechanism 200 is the source (S) / emitter (E) common signal terminal of the lower bridge arm mechanism 200, the negative input terminal 270 is the DC negative power input terminal (DC-) of the lower bridge arm mechanism 200, the source of the silicon carbide MOSFET chip 201 of the lower bridge arm mechanism 200 is connected to the third common signal terminal 205 and the negative input terminal 270, the emitter of the IGBT chip 202 of the lower bridge arm mechanism 200 is connected to the third common signal terminal 205 and the negative input terminal 270, and the negative input terminal 270 and the third common signal terminal 205 are arranged on the second side close to the substrate 103.

[0048] In one embodiment, the substrate 103 is a copper-clad ceramic substrate, the substrate 103 is disposed on the mounting base 300 , and the IGBT chipset and the silicon carbide MOSFET chipset of the upper bridge arm mechanism 100 and the lower bridge arm mechanism 200 are disposed on the substrate 103 .

[0049] Specifically, the substrate 103 may be a copper-clad ceramic substrate, and the substrate 103 may be fixed to the mounting base 300 by any of welding, silver sintering, copper sintering, etc. Optionally, the substrate 103 may be attached to the side wall of the mounting base 300 .

[0050] The IGBT chipset and the silicon carbide MOSFET chipset of the upper bridge arm mechanism 100 and the lower bridge arm mechanism 200 of the semiconductor module 10 are both welded on the substrate 103 . Optionally, the IGBT chipset and the silicon carbide MOSFET chipset of the upper bridge arm mechanism 100 and the lower bridge arm mechanism 200 can be welded on the side wall of the substrate 103 .

[0051] In one embodiment, the number of the semiconductor modules 10 is at least three, and the at least three semiconductor modules 10 are connected in parallel.

[0052] Specifically, the power module of IGBT and silicon carbide MOSFET mixed parallel connection includes three semiconductor modules 10, and the three semiconductor modules 10 are connected in parallel. The three-dimensional structure of the power module of IGBT and silicon carbide MOSFET mixed parallel connection is as follows: Figure 3 shown.

[0053] The interconnection method of the front power circuit and signal circuit of the silicon carbide MOSFET chip and the IGBT chip can be selected according to the specific application scenario and performance requirements. Specifically, the front power circuit of the silicon carbide MOSFET chip and the IGBT chip can be interconnected by copper or aluminum binding wires, or by copper clip welding or sintering. For the signal circuit, an aluminum wire series solution can be used. The power module as a whole can be protected by insulating medium glue filling or plastic sealing.

[0054] In one embodiment, the semiconductor module 10 further includes a thermistor 101 .

[0055] Specifically, the thermistor 101 can be a negative temperature coefficient thermistor (NTC), which is used to output different resistance values ​​according to different temperatures of the power module, so that a device connected to the thermistor 101 can indirectly know the temperature of the power module by measuring the resistance value of the thermistor, and perform temperature control or thermal protection operations according to the temperature of the power module.

[0056] In the power module of the hybrid parallel connection of IGBT and silicon carbide MOSFET of the present application, during the transient opening process, the threshold voltage Vgsth of the silicon carbide MOSFET chip is lower than the threshold voltage Vgeth of the IGBT chip. When both receive the turn-on signal through the gate signal terminal at the same time, due to the difference in threshold voltages, the silicon carbide MOSFET chip will be turned on before the IGBT chip; at the moment of opening, since the silicon carbide MOSFET chip is turned on first, its turn-on loss will dominate, while the loss of the IGBT chip is relatively small. Therefore, the characteristics of the entire opening process are mainly determined by the turn-on characteristics of the silicon carbide MOSFET chip.

[0057] During the shutdown transient process, the threshold voltage Vgsth of the silicon carbide MOSFET chip is lower than the threshold voltage Vgeth of the IGBT chip. When they are turned off simultaneously through gate control, the IGBT chip will be turned off before the silicon carbide MOSFET chip. Since the IGBT chip is connected in parallel with the silicon carbide MOSFET chip, the parasitic capacitance of the parallel IGBT chip can suppress the turn-off stress generated by the silicon carbide MOSFET chip during the shutdown process at the moment of shutdown, thereby allowing the use of smaller turn-off drive parameters and reducing turn-off losses.

[0058] During the freewheeling process, the system uses the parasitic diode of the silicon carbide MOSFET chip for freewheeling. Compared with the traditional silicon-based fast recovery diode (FRD), the use of the parasitic diode of the silicon carbide MOSFET chip for freewheeling can significantly reduce the loss. This is because the silicon carbide material has higher thermal conductivity and lower resistivity, which makes its parasitic diode generate less heat during the freewheeling process and more efficient.

[0059] Based on the above-mentioned embodiment of the power module of mixed parallel connection of IGBT and silicon carbide MOSFET, the present application also provides a motor controller, which may include the power module of mixed parallel connection of IGBT and silicon carbide MOSFET described in the above-mentioned embodiment of the power module of mixed parallel connection of IGBT and silicon carbide MOSFET.

[0060] Furthermore, based on the above motor controller embodiment, the present application also provides a vehicle, which may include the motor controller described in the above motor controller embodiment.

[0061] Technicians in the relevant technical field can clearly understand that, for the convenience and conciseness of description, the specific working process and related instructions of the motor controller and vehicle embodiments of the present application can refer to the corresponding process in the aforementioned IGBT and silicon carbide MOSFET mixed parallel power module embodiment, and have the same beneficial effects as the above-mentioned IGBT and silicon carbide MOSFET mixed parallel power module, which will not be repeated here.

[0062] So far, the technical solution of the present application has been described in conjunction with an embodiment shown in the accompanying drawings, but it is easy for those skilled in the art to understand that the protection scope of the present application is obviously not limited to these specific embodiments. Without departing from the principles of the present application, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will fall within the protection scope of the present application.

Claims

1. A power module in which IGBT and silicon carbide MOSFET are mixed and connected in parallel, comprising a mounting base (300), characterized in that: The mounting base (300) is provided with semiconductor modules (10) distributed in an array, the semiconductor modules (10) comprising an upper bridge arm mechanism (100), a lower bridge arm mechanism (200) and a substrate (103), the upper bridge arm mechanism (100) and the lower bridge arm mechanism (200) being connected in series to form a half-bridge structure; the upper bridge arm mechanism (100) comprising an IGBT chipset, a silicon carbide MOSFET chipset and an upper bridge gate signal terminal (207), the gate of the silicon carbide MOSFET chip (210) of the upper bridge arm mechanism (100) and the gate of the IGBT chip (220) being connected to the upper bridge gate signal terminal (207); the lower bridge arm mechanism (200) comprising an IGBT chipset, a silicon carbide MOSFET chipset and a lower bridge gate signal terminal (204), the gate of the silicon carbide MOSFET chip (201) of the lower bridge arm mechanism (200) and the IGBT chip (220) being connected to the upper bridge gate signal terminal (207); The gate of the GBT chip (202) is connected to the lower bridge gate signal terminal (204).

2. The power module of IGBT and silicon carbide MOSFET mixed in parallel according to claim 1, characterized in that: The upper bridge arm mechanism (100) comprises a first common signal terminal (206) and an output terminal (280); the source of a silicon carbide MOSFET chip (210) and the emitter of an IGBT chip (220) of the upper bridge arm mechanism (100) are connected to the first common signal terminal (206) and the output terminal (280).

3. The power module of IGBT and silicon carbide MOSFET mixed in parallel according to claim 1, characterized in that: The upper bridge arm mechanism (100) comprises a second common signal terminal (208) and a positive input terminal (260); the drain of the silicon carbide MOSFET chip (210) and the collector of the IGBT chip (220) of the upper bridge arm mechanism (100) are connected to the second common signal terminal (208) and the positive input terminal (260).

4. The power module of IGBT and silicon carbide MOSFET mixed in parallel according to claim 1, characterized in that: The silicon carbide MOSFET chipset of the upper bridge arm mechanism (100) comprises at least three silicon carbide MOSFET chips (210) distributed in an array, the IGBT chipset of the upper bridge arm mechanism (100) comprises at least three IGBT chips (220) distributed in an array, the silicon carbide MOSFET chipset of the upper bridge arm mechanism (100) is arranged close to the first side edge of the substrate (103), and the IGBT chipset of the upper bridge arm mechanism (100) is arranged away from the first side edge of the substrate (103); or, The silicon carbide MOSFET chipset of the lower bridge arm mechanism (200) comprises at least three silicon carbide MOSFET chips (201) distributed in an array, the IGBT chipset of the lower bridge arm mechanism (200) comprises at least three IGBT chips (202) distributed in an array, the silicon carbide MOSFET chipset of the lower bridge arm mechanism (200) is arranged close to the second side edge of the substrate (103), and the IGBT chipset of the lower bridge arm mechanism (200) is arranged away from the second side edge of the substrate (103).

5. The power module of IGBT and silicon carbide MOSFET mixed in parallel according to claim 1, characterized in that: The lower bridge arm mechanism (200) comprises a source signal terminal (203); the drain of the silicon carbide MOSFET chip (201) of the lower bridge arm mechanism (200) is connected to the source of the silicon carbide MOSFET chip (210) of the upper bridge arm mechanism (100) and the source signal terminal (203); the collector of the IGBT chip (202) of the lower bridge arm mechanism (200) is connected to the emitter of the IGBT chip (220) of the upper bridge arm mechanism (100) and the source signal terminal (203).

6. The power module of IGBT and silicon carbide MOSFET mixed in parallel according to claim 1, characterized in that: The lower bridge arm mechanism (200) comprises a third common signal terminal (205) and a negative input terminal (270); the source of the silicon carbide MOSFET chip (201) and the emitter of the IGBT chip (202) of the lower bridge arm mechanism (200) are connected to the third common signal terminal (205) and the negative input terminal (270).

7. The power module of IGBT and silicon carbide MOSFET mixed in parallel according to claim 1, characterized in that: The substrate (103) is a copper-clad ceramic substrate, the substrate (103) is arranged on the mounting base (300), and the IGBT chipset and the silicon carbide MOSFET chipset of the upper bridge arm mechanism (100) and the lower bridge arm mechanism (200) are arranged on the substrate (103).

8. The power module of IGBT and silicon carbide MOSFET mixed in parallel according to claim 1, characterized in that: The number of the semiconductor modules (10) is at least three, and the at least three semiconductor modules (10) are connected in parallel.

9. A motor controller, characterized in that: The motor controller comprises a power module in which the IGBT and the silicon carbide MOSFET according to any one of claims 1 to 8 are mixed and connected in parallel.

10. A vehicle, characterized in that: The vehicle includes the motor controller of claim 9.

Images