Switch matrix with composite substrate integrated with SiP

Abstract

The invention discloses a composite substrate integrated SiP switch matrix, which relates to the field of microwave radio frequency, and comprises a composite substrate, and M groups of power division switch modules and four one-from-M switches SIP which are arranged in the composite substrate, the power division switch module comprises four embedded one-to-four power divider circuits and a group of two-out-of-eight switches SIP (Session Initiation Protocol); an input port of the embedded one-to-four power divider circuit is connected with a radio frequency signal input port, and an output port of the embedded one-to-four power divider circuit is connected with an input port of the two-out-of-eight switch SIP. The output port of the two-out-of-eight switch SIP is connected with the input port of the one-out-of-M switch SIP, and the output port of the one-out-of-M switch SIP is connected with the radio frequency signal output port. According to the invention, any 4M-path radio frequency signal input can be converted into any four-path radio frequency signal output; meanwhile, the space utilization rate is high, the size is small, the isolation degree is high, and modularization integration on a composite substrate can be achieved.

Description

Technical Field

[0001] The present invention relates to the field of microwave radio frequency, and in particular to a switch matrix of a composite substrate integrated SiP. Background Art

[0002] The statements in this section merely provide background information related to the present disclosure and may not constitute prior art.

[0003] The multi-port RF switch matrix is ​​one of the most important components in RF automated testing. The matrix is ​​composed of different types of switches combined according to a certain topological structure. Its main function is to achieve the interconnection between the multi-port DUT and the test instrument, and to realize the automated control and switching of the RF test path.

[0004] Most of the existing switch matrices are chassis-type structures, which are composed of a variety of large-volume modules, are large in size and weight, and have low space utilization. Summary of the invention

[0005] The purpose of the present invention is to provide a switch matrix of SiP integrated with a composite substrate in view of the problems existing in the prior art, thereby solving the above problems.

[0006] The technical solution of the present invention is as follows:

[0007] A switch matrix with a composite substrate integrated SiP, having 4M radio frequency signal input ports and 4 radio frequency signal output ports, comprising: a composite substrate, and M groups of power division switch modules and 4 M-to-one switch SIPs arranged in the composite substrate;

[0008] The power division switch module comprises: 4 embedded one-to-four power divider circuits and 1 group of eight-to-two switch SIP; the input ports of the embedded one-to-four power divider circuits are respectively connected to the radio frequency signal input ports, and the output ports of the embedded one-to-four power divider circuits are connected to the input ports of the eight-to-two switch SIP; the output ports of the eight-to-two switch SIP are connected to the input ports of the M-to-one switch SIP, and the output ports of the M-to-one switch SIP are connected to the radio frequency signal output ports.

[0009] Furthermore, the composite substrate comprises: a TOP layer, a BOTTOM layer and three internal RF circuit layers, the three RF circuit layers are, from bottom to top, a first RF circuit layer, a second RF circuit layer, and a third RF circuit layer, and each RF circuit layer is separated by two ground layers.

[0010] Furthermore, the 4M-channel RF signal input ports and the 4-channel RF signal output ports are interconnected with the outside world using a vertical surface mount connector of the TOP layer.

[0011] Furthermore, 4M embedded one-to-four power divider circuits are placed on the first RF circuit layer of the composite substrate, and each embedded one-to-four power divider circuit is interconnected with a vertical surface mount connector of a RF signal input port.

[0012] Furthermore, M groups of eight-to-two switch SIPs are mounted on the TOP layer of the composite substrate, and each group of eight-to-two switch SIPs are arranged on both sides of the RF signal input port, and each group of eight-to-two switch SIPs selects 4 input signals.

[0013] Furthermore, the eight-to-two switch SIP is composed of six two-to-one switches, and the six two-to-one switches are packaged and integrated in one SIP.

[0014] Furthermore, four M-to-one switch SIPs are mounted on the TOP layer of the composite substrate, and are arranged in pairs on both sides of the eight-to-two switch SIP.

[0015] Furthermore, the M groups of eight-to-two switch SIPs and the four M-to-one switch SIPs are interconnected through strip lines on the second-layer RF circuit layer and the third-layer RF circuit layer.

[0016] Furthermore, two output ports of the eight-to-two switch SIP arranged on the left side of the 4M-channel RF signal input port are respectively interconnected with the M-to-one switch SIP on the same side;

[0017] The two output ports of the eight-to-two switch SIP arranged on the right side of the 4M-channel RF signal input port are respectively interconnected with the M-to-one switch SIP on the same side.

[0018] Furthermore, the value range of M is any positive integer.

[0019] Compared with the prior art, the present invention has the following beneficial effects:

[0020] 1. A switch matrix with a composite substrate integrated with SIP proposed in the present invention can realize the conversion of any 4M-channel RF signal input to any 4-channel RF signal output.

[0021] 2. The switch matrix of a composite substrate integrated SIP proposed by the present invention has high space utilization, small size, high isolation, and can be modularly integrated on the composite substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a principle block diagram of a switch matrix of a composite substrate integrated SiP of the present invention;

[0023] Figure 2 This is a structural layout diagram of a switch matrix of a composite substrate integrated SiP of the present invention (taking M=5 as an example);

[0024] Figure 3This is a schematic layout diagram of a switch matrix of a composite substrate integrated SiP according to the present invention (taking M=5 as an example).

[0025] Figure numerals: 1-composite substrate, 2-embedded one-to-four power divider circuit, 3-eight-to-two switch SIP, 4-5-to-one switch SIP. DETAILED DESCRIPTION

[0026] It should be noted that relational terms such as "first" and "second" are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0027] The features and performance of the present invention are further described in detail below in conjunction with the embodiments.

[0028] Embodiment 1

[0029] See also Figure 1 A switch matrix with a composite substrate integrated SiP has 4M RF signal input ports and 4 RF signal output ports, which can realize the conversion of any 4M RF signal input to any 4 RF signal output, including:

[0030] A composite substrate, and M groups of power division switch modules and four M-to-one switch SIPs arranged in the composite substrate;

[0031] The power division switch module includes: 4 embedded one-to-four power divider circuits and 1 group of eight-to-two switch SIPs; that is, a total of 4M embedded one-to-four power divider circuits and M groups of eight-to-two switch SIPs;

[0032] The input ports of the embedded one-to-four power divider circuit are respectively connected to the RF signal input ports, and the output port of the embedded one-to-four power divider circuit is connected to the input port of the eight-to-two switch SIP; the output port of the eight-to-two switch SIP is connected to the input port of the M-to-one switch SIP, and the output port of the M-to-one switch SIP is connected to the RF signal output port;

[0033] It should be noted that the value range of M is any positive integer.

[0034] In this embodiment, specifically, the composite substrate comprises: a TOP layer, a BOTTOM layer and three internal RF circuit layers, the three RF circuit layers are the first RF circuit layer, the second RF circuit layer and the third RF circuit layer from bottom to top, and each RF circuit layer is separated by two ground layers.

[0035] In this embodiment, specifically, the 4M-channel RF signal input ports and the 4-channel RF signal output ports are interconnected with the outside world using a vertical surface mount connector of the TOP layer. It should be noted that the vertical surface mount connector model may be SMPM or SMP.

[0036] In this embodiment, specifically, 4M embedded one-to-four power divider circuits are placed on the first RF circuit layer of the composite substrate, and each embedded one-to-four power divider circuit is interconnected with a vertical surface mount connector of a RF signal input port.

[0037] In this embodiment, specifically, M groups of eight-to-two switch SIPs are mounted on the TOP layer of the composite substrate, and each group of eight-to-two switch SIPs is arranged on both sides of the RF signal input port, and each group of eight-to-two switch SIPs selects four input signals.

[0038] In this embodiment, specifically, the eight-to-two switch SIP is composed of six two-to-one switches, and the six two-to-one switches are packaged and integrated in one SIP.

[0039] In this embodiment, specifically, four M-to-1 switch SIPs are mounted on the TOP layer of the composite substrate, and are arranged in pairs on both sides of the eight-to-2 switch SIP.

[0040] In this embodiment, specifically, M groups of eight-to-two switches SIP and four M-to-one switches SIP are interconnected through strip lines on the second RF circuit layer and the third RF circuit layer. This layout can effectively avoid the crossing of RF strip lines inside the composite substrate, effectively save space, and improve the isolation between different channels.

[0041] In this embodiment, specifically, two output ports of the eight-to-two switch SIP arranged on the left side of the 4M-channel RF signal input port are respectively interconnected with the M-to-one switch SIP on the same side;

[0042] The two output ports of the eight-to-two switch SIP arranged on the right side of the 4M-channel RF signal input port are respectively interconnected with the M-to-one switch SIP on the same side.

[0043] It should also be noted that the switch matrix of the composite substrate integrated SIP proposed in this embodiment can be used in reverse, and can realize the conversion of any 4-way input RF signal to any 4M-way RF signal output.

[0044] Embodiment 2

[0045] See also Figure 2 and Figure 3 In this embodiment, M=5 is taken as an example to further illustrate the first embodiment. A switch matrix of a composite substrate integrated SiP is composed of a composite substrate 1, 5 groups of 8-to-2 switches SIP3, 20 embedded 1-to-4 power divider circuits 2, and 4 5-to-1 switches SIP4. The switch matrix has 20 signal input ports and 4 signal output ports, and can realize the conversion of any 20 RF signal inputs to any 4 RF signal outputs.

[0046] Take the example of realizing the signal input from IN1 and output from OUT1. The signal is input from the surface mount connector IN1. After the signal passes through the embedded power divider circuit PD1, the single-pole double-throw switch S1 selects to connect PD1, and then the single-pole double-throw switch S3 selects to connect switch S1. Finally, the single-pole five-throw switch S13 is closed to realize the signal output from OUT1.

[0047] Take the example of realizing the signal input from IN2 and output from OUT1. The signal is input from the surface mount connector IN2. After the signal passes through the embedded power divider circuit PD2, the single-pole double-throw switch S1 selects to connect PD2, and then the single-pole double-throw switch S3 selects to connect switch S1. Finally, the single-pole five-throw switch S13 is closed to realize the signal output from OUT1.

[0048] The same applies to other situations.

[0049] The above-mentioned embodiments only express the specific implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the protection scope of the present application. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the technical solution concept of the present application, and these all belong to the protection scope of the present application.

[0050] This background section is provided to generally present the context of the invention, and the work of the presently named inventors, the work to the extent described in this background section, and aspects of this section that did not constitute prior art at the time of application are neither explicitly nor implicitly admitted to be prior art to the present invention.

Claims

1. A switch matrix of a composite substrate integrated SiP, characterized in that: It has 4M radio frequency signal input ports and 4 radio frequency signal output ports, including: a composite substrate, and M groups of power division switch modules and 4 M-to-one switch SIPs arranged in the composite substrate; The power division switch module comprises: 4 embedded one-to-four power divider circuits and 1 group of eight-to-two switch SIP; the input ports of the embedded one-to-four power divider circuits are respectively connected to the radio frequency signal input ports, and the output ports of the embedded one-to-four power divider circuits are connected to the input ports of the eight-to-two switch SIP; the output ports of the eight-to-two switch SIP are connected to the input ports of the M-to-one switch SIP, and the output ports of the M-to-one switch SIP are connected to the radio frequency signal output ports.

2. A switch matrix of a composite substrate integrated SiP according to claim 1, characterized in that: The composite substrate comprises: a TOP layer, a BOTTOM layer and three internal radio frequency circuit layers, wherein the three radio frequency circuit layers are, from bottom to top, a first radio frequency circuit layer, a second radio frequency circuit layer and a third radio frequency circuit layer, and each radio frequency circuit layer is separated by two ground layers.

3. The switch matrix of a composite substrate integrated SiP according to claim 2, characterized in that: The 4M-channel RF signal input port and the 4-channel RF signal output port are interconnected with the outside world using the vertical surface mount connector on the TOP layer.

4. The switch matrix of the composite substrate integrated SiP according to claim 3, characterized in that: 4M embedded one-to-four power divider circuits are placed on the first RF circuit layer of the composite substrate, and each embedded one-to-four power divider circuit is interconnected with a vertical surface mount connector of a RF signal input port.

5. The switch matrix of a composite substrate integrated SiP according to claim 3, characterized in that: M groups of eight-to-two switch SIPs are mounted on the TOP layer of the composite substrate, and each group of eight-to-two switch SIPs is arranged on both sides of the RF signal input port, and each group of eight-to-two switch SIPs selects 4 input signals.

6. The switch matrix of the composite substrate integrated SiP according to claim 5, characterized in that: The eight-to-two switch SIP is composed of six two-to-one switches, and the six two-to-one switches are packaged and integrated in one SIP.

7. The switch matrix of the composite substrate integrated SiP according to claim 6, characterized in that: The four M-to-one switch SIPs are mounted on the TOP layer of the composite substrate and are arranged in pairs on both sides of the eight-to-two switch SIP.

8. The switch matrix of the composite substrate integrated SiP according to claim 7, characterized in that: The M groups of eight-to-two switch SIPs and the four M-to-one switch SIPs are interconnected through strip lines on the second-layer RF circuit layer and the third-layer RF circuit layer.

9. The switch matrix of the composite substrate integrated SiP according to claim 8, characterized in that: The two output ports of the 8-to-2 switch SIP arranged on the left side of the 4M-channel RF signal input port are respectively interconnected with the M-to-1 switch SIP on the same side; The two output ports of the eight-to-two switch SIP arranged on the right side of the 4M-channel RF signal input port are respectively interconnected with the M-to-one switch SIP on the same side.

10. The switch matrix of the composite substrate integrated SiP according to claim 9, characterized in that: The value range of M is any positive integer.

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