Diamond semiconductor device and manufacturing method thereof

Abstract

The invention relates to a diamond semiconductor device and a manufacturing method thereof. The diamond semiconductor device includes: a device body; the gold electrode is arranged on the surface of the device main body; the dielectric layer is arranged on the surface of the device main body, and the dielectric layer surrounds the gold electrode; and the adhesion metal layer is respectively connected with the gold electrode and the dielectric layer, and the adhesion metal layer is used for leading out the electrode. The dielectric layer surrounding the gold electrode is arranged on the surface of the device body, the adhesion metal layer is arranged to be connected with the gold electrode and the dielectric layer, the electrode is led out through the adhesion metal layer and the gold electrode, and due to the fact that the adhesion between the dielectric layer and the device body is high, and the adhesion between the adhesion metal layer and the dielectric layer is high, the electrode is led out through the adhesion metal layer and the dielectric layer. The adhesion metal layer can play a role in reinforcing the gold electrode, and the situation that the gold electrode falls off during follow-up external packaging interconnection is reduced.

Description

Technical Field

[0001] The present application relates to the field of diamond semiconductor technology, and in particular to a diamond semiconductor device and a method for manufacturing the same. Background Art

[0002] As the fourth generation of ultra-wide bandgap semiconductor materials, diamond material has shown unique advantages and application prospects in many fields. As an allotrope of carbon, diamond has an extremely strong and stable crystal structure, and the carbon atoms in its structure are interconnected in an SP3 hybrid manner. This gives diamond a series of excellent physical properties, such as high breakdown field strength, high carrier mobility, strong heat dissipation ability, high temperature resistance, corrosion resistance, etc., especially in the semiconductor field.

[0003] The advantages of diamond semiconductors are mainly reflected in their high electron mobility and high thermal stability. At room temperature, the electron and hole mobility of diamond is much higher than that of the third-generation semiconductor materials GaN and SiC, which makes diamond semiconductors have great application potential in high-power electronic devices, high-frequency communications and microwave radar. In addition, the thermal conductivity of diamond semiconductors is extremely high, which is crucial for the preparation of high-performance semiconductor devices such as radio frequency power amplifiers and high-power lasers.

[0004] In the related art, gold electrodes are generally used when making the lead-out electrodes of diamond semiconductor devices. Gold contacts the surface of diamond that has been treated with hydrogen to form an ohmic contact, thereby forming an ohmic electrode. However, the adhesion between the gold electrode and the diamond is very poor, and the gold electrode is easily detached during subsequent external packaging interconnection. Summary of the invention

[0005] Based on this, it is necessary to provide a diamond semiconductor device and a manufacturing method thereof that can reduce the shedding of gold electrodes in order to solve the above technical problems.

[0006] In the first aspect, the present application proposes a diamond semiconductor device, comprising: a device body; a gold electrode, the gold electrode being arranged on the surface of the device body; a dielectric layer, the dielectric layer being arranged on the surface of the device body, the dielectric layer surrounding the gold electrode; an adhesive metal layer, the adhesive metal layer respectively connecting the gold electrode and the dielectric layer, the adhesive metal layer being used for leading out the electrode.

[0007] In one embodiment, the thickness of the dielectric layer is greater than the thickness of the gold electrode, and the dielectric layer covers a portion of the top surface of the gold electrode.

[0008] In one embodiment, the interface between the adhesion metal layer and the dielectric layer completely surrounds the interface between the adhesion metal layer and the gold electrode.

[0009] In one embodiment, the material of the dielectric layer is at least one of silicon dioxide, silicon nitride, and aluminum oxide.

[0010] In one embodiment, the material of the adhesion metal layer is at least one of titanium and nickel.

[0011] In one of the embodiments, it further includes: a reinforcement metal layer, wherein the reinforcement metal layer is disposed on the adhesion metal layer, and the reinforcement metal layer is used for leading out electrodes.

[0012] In one embodiment, the material of the reinforced metal layer is at least one of aluminum and gold.

[0013] In one embodiment, the dielectric layer has a thickness of 10 nanometers to 100 nanometers, the adhesion metal layer has a thickness of 10 nanometers to 50 nanometers, and the reinforcement metal layer has a thickness greater than 1 micrometer.

[0014] In the second aspect, the present application also proposes a method for manufacturing a diamond semiconductor device, the method comprising: providing a device body; wherein a gold electrode is provided on the surface of the device body; forming a dielectric layer on the surface of the device body; wherein the dielectric layer surrounds the gold electrode; opening a hole in the dielectric layer to expose the gold electrode; forming an adhesion metal layer on the dielectric layer and the gold electrode; wherein the adhesion metal layer connects the gold electrode and the dielectric layer respectively, and the adhesion metal layer is used to lead out the electrode.

[0015] In one of the embodiments, the method further comprises: forming a reinforcement metal layer on the adhesion metal layer; wherein the reinforcement metal layer is used for leading out electrodes.

[0016] The above-mentioned diamond semiconductor device and its manufacturing method are provided by arranging a dielectric layer surrounding the gold electrode on the surface of the device body, and arranging an adhesive metal layer to connect the gold electrode and the dielectric layer respectively, and leading out the electrode through the adhesive metal layer and the gold electrode. Since the adhesion between the dielectric layer and the device body is strong, and the adhesion between the adhesive metal layer and the dielectric layer is strong, the adhesive metal layer can play a role in reinforcing the gold electrode, thereby reducing the situation where the gold electrode falls off during subsequent external packaging interconnection. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0018] FIG1 is a schematic structural diagram of a diamond semiconductor device in one embodiment;

[0019] FIG2 is a schematic diagram of the structure of a dielectric layer and a gold electrode in one embodiment;

[0020] FIG3 is a schematic diagram of the structure of a dielectric layer and an adhesive metal layer in one embodiment;

[0021] FIG4 is a schematic structural diagram of a diamond semiconductor device in another embodiment;

[0022] FIG5 is a schematic structural diagram of a diamond semiconductor device in yet another embodiment;

[0023] FIG6 is a schematic structural diagram of a diamond semiconductor device in yet another embodiment;

[0024] FIG7 is a flow chart of a method for manufacturing a diamond semiconductor device in one embodiment;

[0025] FIG8 is a flow chart of a method for manufacturing a diamond semiconductor device in another embodiment;

[0026] FIG9 is a block diagram of a manufacturing apparatus for a diamond semiconductor device according to an embodiment;

[0027] Description of reference numerals:

[0028] The device body 110 , the gold electrode 120 , the dielectric layer 130 , the adhesive metal layer 140 , the reinforcement metal layer 150 , the device providing module 310 , the dielectric layer forming module 320 , the dielectric layer opening module 330 , and the metal layer forming module 340 . DETAILED DESCRIPTION

[0029] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0031] It can be understood that the terms "first", "second", etc. used in the present application can be used in this article to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish the first element from another element.

[0032] Spatial relationship terms such as "under", "below", "below", "under", "above", "above", etc., may be used herein to describe the relationship between an element or feature shown in the figures and other elements or features. It should be understood that in addition to the orientations shown in the figures, spatial relationship terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is turned over, the element or feature described as "under other elements" or "under it" or "under it" will be oriented as "on" other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0033] It should be noted that when an element is considered to be "connected" to another element, it can be directly connected to the other element, or connected to the other element through an intermediate element. In addition, the "connection" in the following embodiments should be understood as "electrical connection", "communication connection", etc. if there is transmission of electrical signals or data between the connected objects.

[0034] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" and the like specify the presence of stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. At the same time, the term "and / or" used in this specification includes any and all combinations of the relevant listed items.

[0035] As described in the background art, when gold electrodes are used as lead electrodes in diamond semiconductor devices in the prior art, the gold electrodes are prone to fall off during the subsequent external packaging interconnection process, resulting in reduced reliability of the diamond semiconductor devices. Studies have found that the reason for this problem is that the gold electrodes have poor adhesion when in contact with the diamond surface that has been treated with hydrogen.

[0036] Based on the above reasons, the present application provides a diamond semiconductor device and a method for manufacturing the same, which can reduce the risk of gold electrodes falling off during subsequent external packaging and interconnection.

[0037] In one embodiment, as shown in FIG. 1 , a diamond semiconductor device is provided, including: a device body 110, a gold electrode 120, a dielectric layer 130 and an adhesion metal layer 140, wherein the gold electrode 120 is arranged on the surface of the device body 110; the dielectric layer 130 is arranged on the surface of the device body 110, and the dielectric layer 130 surrounds the gold electrode 120; the adhesion metal layer 140 connects the gold electrode 120 and the dielectric layer 130 respectively, and the adhesion metal layer 140 is used for leading out the electrode.

[0038] Specifically, the device body 110 is a semiconductor device using diamond material as the main structure, and its surface is diamond material. The device body 110 may include a diamond substrate and a diamond epitaxial layer. After being manufactured through a semiconductor process, a semiconductor device with different functions can be formed. Gold electrodes 120 are provided at positions on the surface of the device body 110 where electrodes need to be drawn out. The gold electrodes 120 contact the surface of the device body 110 that has been treated with hydrogen to form an ohmic contact, thereby forming an ohmic electrode. The number, shape and other parameters of the gold electrodes 120 can be arbitrarily set according to the needs of the semiconductor device, and are not limited here.

[0039] A dielectric layer 130 is also provided on the surface of the device body 110. The dielectric layer 130 is provided around the gold electrode 120, that is, the side of the gold electrode 120 is in contact with the dielectric layer 130, and the gold electrode 120 is located in the pores formed by the dielectric layer 130. An adhesive metal layer 140 is provided on the dielectric layer 130 and the gold electrode 120. The adhesive metal layer 140 is connected to the gold electrode 120 and the dielectric layer 130 respectively, and the adhesive metal layer 140 is used to lead out the electrode of the semiconductor device. Since the adhesion between the dielectric layer 130 and the device body 110 is strong, and the adhesion between the adhesive metal layer 140 and the dielectric layer 130 is strong, the adhesive metal layer 140 can play a role in reinforcing the gold electrode 120, thereby reducing the situation where the gold electrode 120 falls off during the subsequent external packaging interconnection.

[0040] In one embodiment, as shown in FIG. 2 , the thickness of the dielectric layer 130 is greater than the thickness of the gold electrode 120, and the dielectric layer 130 covers a portion of the top surface of the gold electrode 120. Specifically, in this embodiment, the thickness of the dielectric layer 130 is set to be greater than the thickness of the gold electrode 120. At this time, the dielectric layer 130 exceeds the portion of the gold electrode 120 in the thickness direction, and can extend to the top surface of the gold electrode 120, thereby covering a portion of the top surface of the gold electrode 120. In this case, the portion of the dielectric layer 130 covering the top surface of the gold electrode 120 will form a mechanical limiting structure, thereby further reinforcing the gold electrode 120. It can be understood that the shape of the contact surface between the dielectric layer 130 and the top surface of the gold electrode 120 can be various. In general, in order to facilitate the process, the gold electrode 120 is cylindrical, and the shape of the contact surface is annular, so as to fix the positions around the top surface of the gold electrode 120. In some other embodiments, the thickness of the dielectric layer 130 may also be equal to or less than the thickness of the gold electrode 120. In this case, the gold electrode 120 can be reinforced only by the adhesion between the adhesion metal layer 140 and the dielectric layer 130, thereby reducing the possibility of the gold electrode 120 falling off.

[0041] In one embodiment, as shown in FIG3 , the interface between the adhesion metal layer 140 and the dielectric layer 130 completely surrounds the interface between the adhesion metal layer 140 and the gold electrode 120. Specifically, in this embodiment, the interface between the adhesion metal layer 140 and the dielectric layer 130 completely surrounds the interface between the adhesion metal layer 140 and the gold electrode 120. In this case, the adhesion metal layer 140 completely covers the gold electrode 120, and covers the dielectric layer 130 after exceeding the top surface of the gold electrode 120. At this time, the adhesion metal layer 140 is covered around the top surface of the gold electrode 120. While increasing the connection area between the adhesion metal layer 140 and the dielectric layer 130, the reinforcement effect of the adhesion metal layer 140 on the gold electrode 120 is further enhanced. In some other embodiments, the adhesion metal layer 140 may also cover a portion of the top surface of the gold electrode 120.

[0042] In one embodiment, as shown in FIG. 4 , in the diamond semiconductor device of this embodiment, the thickness of the dielectric layer 130 is greater than the thickness of the gold electrode 120 , the dielectric layer 130 covers a portion of the top surface of the gold electrode 120 , and the interface between the adhesion metal layer 140 and the dielectric layer 130 completely surrounds the interface between the adhesion metal layer 140 and the gold electrode 120 . With this arrangement, while reinforcing the gold electrode 120 through the limiting structure of the dielectric layer 130 , the reinforcing capability of the gold electrode 120 can be further improved by increasing the contact area between the adhesion metal layer 140 and the dielectric layer 130 , thereby further reducing the possibility of the gold electrode 120 falling off.

[0043] In one embodiment, the material of the dielectric layer 130 is at least one of silicon dioxide, silicon nitride, and aluminum oxide. Specifically, silicon dioxide, silicon nitride, and aluminum oxide are insulating materials with good adhesion to diamond, and when used as an insulating layer, they can also be adhered to the adhesion metal layer 140. In some other embodiments, insulating materials such as polysilicon and zinc oxide can also be selected as the dielectric layer 130.

[0044] In one embodiment, the material of the adhesion metal layer 140 is at least one of titanium and nickel. Specifically, the adhesion metal layer 140 needs to have good adhesion with the dielectric layer 130 and needs to have excellent conductivity. Titanium and nickel have large work functions, good adhesion, can form good ohmic contacts with a variety of materials, and have low contact resistance when connected to the gold electrode 120. In some embodiments, gold can also be used as the material of the adhesion metal layer 140, which also has good adhesion when in contact with the dielectric layer 130.

[0045] In one embodiment, as shown in FIG5 , the diamond semiconductor device further includes: a reinforcement metal layer 150, the reinforcement metal layer 150 is disposed on the adhesion metal layer 140, and the reinforcement metal layer 150 is used to lead out the electrode. Specifically, in this embodiment, a reinforcement metal layer 150 is also disposed on the adhesion metal layer 140 to thicken the entire metal layer, and the reinforcement metal layer 150 is used to lead out the electrode, which can improve the reliability of the lead-out electrode. In one embodiment, the material of the reinforcement metal layer 150 is at least one of aluminum and gold. It can be understood that in the diamond semiconductor devices in the above embodiments, the reinforcement metal layer 150 can be disposed on the adhesion metal layer 140, and will not be repeated here one by one.

[0046] In a specific embodiment, as shown in FIG6 , in the diamond semiconductor device of this embodiment, the thickness of the dielectric layer 130 is greater than the thickness of the gold electrode 120, the dielectric layer 130 covers a portion of the top surface of the gold electrode 120, and the interface between the adhesion metal layer 140 and the dielectric layer 130 completely surrounds the interface between the adhesion metal layer 140 and the gold electrode 120, and a reinforcement metal layer 150 is provided on the adhesion metal layer 140. With this arrangement, in the case of reinforcing the gold electrode 120 through the limiting structure of the dielectric layer 130, the reinforcement capability of the gold electrode 120 can be further improved by increasing the contact area between the adhesion metal layer 140 and the dielectric layer 130 and adding the reinforcement metal layer 150, and the situation of the gold electrode 120 falling off can be further reduced.

[0047] In one embodiment, the dielectric layer 130 has a thickness of 10 nanometers to 100 nanometers, the adhesion metal layer 140 has a thickness of 10 nanometers to 50 nanometers, and the reinforcement metal layer 150 has a thickness greater than 1 micrometer.

[0048] In one embodiment, the present application also proposes a method for manufacturing a diamond semiconductor device, which is used to manufacture the diamond semiconductor device in the above embodiment.

[0049] In one embodiment, as shown in FIG. 7 , a method for manufacturing a diamond semiconductor device is applied to a semiconductor manufacturing system as an example for description. The method for manufacturing includes but is not limited to the following steps:

[0050] Step S210, providing a device body.

[0051] Specifically, the semiconductor manufacturing system first provides a device body 110 that needs to be reinforced with a gold electrode 120 . The device body 110 has completed the previous semiconductor manufacturing process, and the gold electrode 120 has been set on the surface of the device body 110 .

[0052] Step S220: forming a dielectric layer on the surface of the device body.

[0053] Specifically, the semiconductor manufacturing system can deposit a layer of dielectric on the surface of the device body 110 by chemical vapor deposition, and form a dielectric layer 130 with uniform thickness on the surface of the device body 110 by processes such as grinding, and the formed dielectric layer 130 surrounds the gold electrode 120. In some embodiments, the material of the dielectric layer 130 is at least one of silicon dioxide, silicon nitride, and aluminum oxide.

[0054] Step S230, opening a hole in the dielectric layer to expose the gold electrode.

[0055] Specifically, after forming the dielectric layer 130 on the surface of the device body 110, the semiconductor manufacturing system can make a hole in the dielectric layer 130 to expose the gold electrode 120 in the dielectric layer 130. For example, in the case where the thickness of the dielectric layer 130 needs to be greater than the thickness of the gold electrode 120, a hole can be made in the dielectric layer 130 by photolithography, etching or corrosion to expose the gold electrode 120. It can be understood that by controlling the size of the hole, the top surface of the gold electrode 120 can be completely exposed, or only a portion of the top surface of the gold electrode 120 can be exposed. For example, in the case where the area of ​​the hole is smaller than the top surface of the gold electrode 120, the dielectric layer 130 covers a portion of the top surface of the gold electrode 120; in the case where the thickness of the dielectric layer 130 needs to be equal to the thickness of the gold electrode 120, the dielectric layer 130 can be ground by mechanical grinding until the top surface of the gold electrode 120 is exposed.

[0056] Step S240: forming an adhesion metal layer on the dielectric layer and the gold electrode.

[0057] Specifically, after the gold electrode 120 is exposed on the dielectric layer 130, the semiconductor manufacturing system can deposit the adhesion metal layer 140 on the dielectric layer 130 and the gold electrode 120 through a thin film deposition process such as chemical vapor deposition and physical vapor deposition. The obtained adhesion metal layer 140 is respectively connected to the gold electrode 120 and the dielectric layer 130, and the adhesion metal layer 140 is used to lead out the electrode. It can be understood that before the step of depositing the adhesion metal layer 140, the position where the adhesion metal layer 140 is not required to be deposited can be covered by depositing an auxiliary layer, so as to control the shape of the deposited adhesion metal layer 140. In some embodiments, the interface between the adhesion metal layer 140 and the dielectric layer 130 completely surrounds the interface between the adhesion metal layer 140 and the gold electrode 120. In some embodiments, the material of the adhesion metal layer 140 is at least one of titanium and nickel.

[0058] The manufacturing method of the above-mentioned diamond semiconductor device is provided by arranging a dielectric layer 130 surrounding the gold electrode 120 on the surface of the device body 110, and arranging an adhesive metal layer 140 to connect the gold electrode 120 and the dielectric layer 130 respectively, and leading out the electrode through the adhesive metal layer 140 and the gold electrode 120. Since the adhesion between the dielectric layer 130 and the device body 110 is strong, and the adhesion between the adhesive metal layer 140 and the dielectric layer 130 is strong, the adhesive metal layer 140 can play a role in reinforcing the gold electrode 120, thereby reducing the situation where the gold electrode 120 falls off during subsequent external packaging interconnection.

[0059] In one embodiment, as shown in FIG8 , the method for manufacturing a diamond semiconductor device further includes:

[0060] Step S250: forming a reinforcement metal layer on the adhesion metal layer.

[0061] Specifically, in this embodiment, after forming the adhesion metal layer 140, a reinforcement metal layer 150 is formed on the adhesion metal layer 140. The reinforcement metal layer 150 is used to thicken the entire metal layer. The reinforcement metal layer 150 is used to lead out electrodes, which can improve the reliability of the lead-out electrodes. In one embodiment, the material of the reinforcement metal layer 150 is at least one of aluminum and gold.

[0062] In one embodiment, the thickness of the dielectric layer 130 formed by the method for manufacturing a diamond semiconductor device is 10 nanometers to 100 nanometers, the thickness of the adhesion metal layer 140 is 10 nanometers to 50 nanometers, and the thickness of the reinforcement metal layer 150 is greater than 1 micrometer.

[0063] It should be understood that, although the various steps in the flowcharts involved in the above-mentioned embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps does not have a strict order restriction, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above-mentioned embodiments can include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0064] Based on the same inventive concept, the embodiment of the present application also provides a diamond semiconductor device manufacturing device for implementing the diamond semiconductor device manufacturing method involved above. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme recorded in the above method, so the specific limitations in the one or more diamond semiconductor device manufacturing device embodiments provided below can refer to the limitations of the diamond semiconductor device manufacturing method above, and will not be repeated here.

[0065] In one embodiment, as shown in FIG. 9 , a manufacturing device for a diamond semiconductor device is provided, comprising: a device providing module 310, a dielectric layer forming module 320, a dielectric layer opening module 330 and a metal layer forming module 340, wherein:

[0066] The device providing module 310 is used to provide a device body 110; wherein a gold electrode 120 is provided on the surface of the device body 110;

[0067] The dielectric layer forming module 320 is used to form a dielectric layer 130 on the surface of the device body 110; wherein the dielectric layer 130 surrounds the gold electrode 120;

[0068] The dielectric layer opening module 330 is used to open a hole in the dielectric layer 130 to expose the gold electrode 120;

[0069] The metal layer forming module 340 is used to form an adhesive metal layer 140 on the dielectric layer 130 and the gold electrode 120; wherein the adhesive metal layer 140 is respectively connected to the gold electrode 120 and the dielectric layer 130, and the adhesive metal layer 140 is used to lead out the electrode.

[0070] In one embodiment, the metal layer forming module 340 is further used to form a reinforcement metal layer 150 on the adhesion metal layer 140; wherein the reinforcement metal layer 150 is used to lead out electrodes.

[0071] In one embodiment, the thickness of the dielectric layer 130 is greater than the thickness of the gold electrode 120 , and the dielectric layer 130 covers a portion of the top surface of the gold electrode 120 .

[0072] In one embodiment, the interface between the adhesion metal layer 140 and the dielectric layer 130 completely surrounds the interface between the adhesion metal layer 140 and the gold electrode 120 .

[0073] In one embodiment, the material of the dielectric layer 130 is at least one of silicon dioxide, silicon nitride, and aluminum oxide.

[0074] In one embodiment, the material of the adhesion metal layer 140 is at least one of titanium and nickel.

[0075] In one embodiment, the reinforcement metal layer 150 is disposed on the adhesion metal layer 140 , and the reinforcement metal layer 150 is used to lead out the electrode.

[0076] In one embodiment, the material of the reinforcement metal layer 150 is at least one of aluminum and gold.

[0077] In one embodiment, the dielectric layer 130 has a thickness of 10 nanometers to 100 nanometers, the adhesion metal layer 140 has a thickness of 10 nanometers to 50 nanometers, and the reinforcement metal layer 150 has a thickness greater than 1 micrometer.

[0078] Each module in the above-mentioned diamond semiconductor device manufacturing device can be implemented in whole or in part by software, hardware and their combination. Each of the above-mentioned modules can be embedded in or independent of the processor in the computer device in the form of hardware, or can be stored in the memory of the computer device in the form of software, so that the processor can call and execute the corresponding operations of each of the above modules.

[0079] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "specific embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0080] The technical features of the above embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0081] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A diamond semiconductor device, characterized in that: include: Device body; A gold electrode, wherein the gold electrode is disposed on the surface of the device body; A dielectric layer, the dielectric layer is arranged on the surface of the device body, and the dielectric layer surrounds the gold electrode; An adhesive metal layer is provided, wherein the adhesive metal layer is respectively connected to the gold electrode and the dielectric layer, and the adhesive metal layer is used for leading out the electrode.

2. The diamond semiconductor device according to claim 1, characterized in that The thickness of the dielectric layer is greater than the thickness of the gold electrode, and the dielectric layer covers a portion of the top surface of the gold electrode.

3. The diamond semiconductor device according to claim 1, characterized in that The interface between the adhesion metal layer and the dielectric layer completely surrounds the interface between the adhesion metal layer and the gold electrode.

4. The diamond semiconductor device according to claim 1, characterized in that The material of the dielectric layer is at least one of silicon dioxide, silicon nitride and aluminum oxide.

5. The diamond semiconductor device according to claim 1, characterized in that: The material of the adhesion metal layer is at least one of titanium and nickel.

6. The diamond semiconductor device according to any one of claims 1 to 5, characterized in that: Also includes: A reinforcing metal layer is disposed on the adhesive metal layer, and the reinforcing metal layer is used for leading out electrodes.

7. The diamond semiconductor device according to claim 6, characterized in that: The material of the reinforced metal layer is at least one of aluminum and gold.

8. The diamond semiconductor device according to claim 6, characterized in that The thickness of the dielectric layer is 10 nanometers to 100 nanometers, the thickness of the adhesion metal layer is 10 nanometers to 50 nanometers, and the thickness of the reinforcement metal layer is greater than 1 micrometer.

9. A method for manufacturing a diamond semiconductor device, characterized in that: The method comprises: Providing a device body; wherein a gold electrode is provided on the surface of the device body; forming a dielectric layer on the surface of the device body; wherein the dielectric layer surrounds the gold electrode; Opening a hole in the dielectric layer to expose the gold electrode; An adhesive metal layer is formed on the dielectric layer and the gold electrode; wherein the adhesive metal layer is respectively connected to the gold electrode and the dielectric layer, and the adhesive metal layer is used for leading out the electrode.

10. The method for manufacturing a diamond semiconductor device according to claim 9, characterized in that: The method further comprises: A reinforcement metal layer is formed on the adhesion metal layer; wherein the reinforcement metal layer is used for leading out electrodes.

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