GaN-based semiconductor light-emitting element with two-dimensional hole injection layer

Abstract

The invention relates to the technical field of semiconductor photoelectric devices, and particularly discloses a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer. The GaN-based semiconductor light-emitting element with the two-dimensional hole injection layer sequentially comprises a substrate, an n-type semiconductor, a quantum well and a p-type semiconductor from bottom to top, and is characterized in that the two-dimensional hole injection layer and an electron blocking layer are arranged between the p-type semiconductor and the quantum well; according to the GaN-based semiconductor light-emitting element with the two-dimensional hole injection layer, the electron affinity of the interface among the two-dimensional hole injection layer, the electron blocking layer, the p-type semiconductor and the quantum well and the interface change angle and the interface uniformity of breakdown field strength are regulated and controlled; the hole injection barrier of the interface of the two-dimensional hole injection layer and the quantum well is reduced, the electron overflow barrier of the interface of the two-dimensional hole injection layer and the electron blocking layer is improved, the efficiency of hole injection of the quantum well is improved, and therefore the photoelectric conversion efficiency WPE of the semiconductor light-emitting element is improved.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor optoelectronic devices, and in particular relates to a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer. Background Art

[0002] Semiconductor components, especially semiconductor light-emitting components, have a wide adjustable wavelength range, high luminous efficiency, energy saving and environmental protection, a long service life of more than 100,000 hours, small size, multiple application scenarios, and strong designability. They have gradually replaced incandescent lamps and fluorescent lamps and become the light source for ordinary household lighting. They are also widely used in new scenarios, such as indoor high-resolution display screens, outdoor display screens, Mini-LED, Micro-LED, mobile TV backlight, backlighting, street lights, car headlights, daytime running lights, interior atmosphere lights, flashlights and other application fields.

[0003] Traditional nitride semiconductors are grown on sapphire substrates, which have large lattice mismatch and thermal mismatch, resulting in high defect density and polarization effect, reducing the luminous efficiency of semiconductor light-emitting elements; at the same time, the hole ionization efficiency of traditional nitride semiconductors is much lower than the electron ionization efficiency, resulting in a hole concentration that is more than one order of magnitude lower than the electron concentration. Excess electrons will overflow from the multi-quantum wells to the second conductive semiconductor to produce non-radiative recombination. The low hole ionization efficiency will make it difficult for the holes of the second conductive semiconductor to be effectively injected into the multi-quantum wells, and the efficiency of hole injection into the multi-quantum wells is low, resulting in multiple The luminescence efficiency of the sub-well is low; the nitride semiconductor structure has non-central symmetry, and will produce strong spontaneous polarization along the c-axis direction, superimposed with the piezoelectric polarization effect of lattice mismatch to form an intrinsic polarization field; this intrinsic polarization field is along the (001) direction, causing the multi-quantum well layer to produce a strong quantum confined Stark effect, causing energy band tilt and spatial separation of electron-hole wave functions, reducing the radiation recombination efficiency of electrons and holes; the refractive index, dielectric constant and other parameters of the semiconductor light-emitting element are greater than those of air, resulting in a small total reflection angle of light emitted from the quantum well when it is emitted, and a low light extraction efficiency. Summary of the invention

[0004] The purpose of the present invention is to provide a GaN-based semiconductor light-emitting element with a simple structure and reasonable design and a two-dimensional hole injection layer in order to solve the above problems.

[0005] The present invention achieves the above-mentioned purpose through the following technical solutions:

[0006] A GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer comprises, from bottom to top, a substrate, an n-type semiconductor, a quantum well and a p-type semiconductor, wherein a two-dimensional hole injection layer and an electron blocking layer are provided between the p-type semiconductor and the quantum well; the peak position of the electron affinity of the two-dimensional hole injection layer decreases at an angle α toward the quantum well, the peak position of the electron affinity of the two-dimensional hole injection layer decreases at an angle β toward the p-type semiconductor, the valley position of the electron affinity of the electron blocking layer increases at an angle γ toward the quantum well, and the valley position of the electron affinity of the electron blocking layer increases at an angle θ toward the p-type semiconductor, wherein: 20°≤γ≤β≤α≤θ≤90°, and the angle is the tangent inclination angle along the curve;

[0007] The rising angle of the valley position of the bandgap width of the two-dimensional hole injection layer toward the quantum well direction is δ, the rising angle of the valley position of the bandgap width of the two-dimensional hole injection layer toward the p-type semiconductor direction is σ, the descending angle of the peak position of the bandgap width of the electron blocking layer toward the quantum well direction is φ, and the descending angle of the peak position of the bandgap width of the electron blocking layer toward the p-type semiconductor direction is ψ, wherein: 10°≤φ≤σ≤δ≤ψ≤90°.

[0008] Furthermore, the rising angle of the valley position of the conduction band effective state density of the two-dimensional hole injection layer toward the quantum well is μ, the rising angle of the valley position of the conduction band effective state density of the two-dimensional hole injection layer toward the p-type semiconductor is υ, the descending angle of the peak position of the conduction band effective state density of the electron blocking layer toward the quantum well is ρ, and the descending angle of the peak position of the conduction band effective state density of the electron blocking layer toward the p-type semiconductor is ω, wherein: 15°≤ρ≤υ≤μ≤ω≤90°.

[0009] Furthermore, the decreasing angle of the peak position of the breakdown field strength of the two-dimensional hole injection layer toward the quantum well is ε, the decreasing angle of the peak position of the breakdown field strength of the two-dimensional hole injection layer toward the p-type semiconductor is η, the increasing angle of the valley position of the breakdown field strength of the electron blocking layer toward the quantum well is κ, and the increasing angle of the valley position of the breakdown field strength of the electron blocking layer toward the p-type semiconductor is ζ, wherein: 17°≤κ≤η≤ε≤ζ≤90°.

[0010] Furthermore, the rising angle of the valley position of the thermal conductivity of the two-dimensional hole injection layer toward the quantum well is χ, the rising angle of the valley position of the thermal conductivity of the two-dimensional hole injection layer toward the p-type semiconductor is ν, the decreasing angle of the peak position of the thermal conductivity of the electron blocking layer toward the quantum well is π, and the decreasing angle of the peak position of the thermal conductivity of the electron blocking layer toward the p-type semiconductor is τ, wherein: 13°≤π≤ν≤χ≤τ≤90°.

[0011] Furthermore, the electron affinity and the peak position of the breakdown field strength of the two-dimensional hole injection layer have the following relationship in the direction of the quantum well: 10°≤δ≤χ≤μ≤ε≤α≤90°;

[0012] The decreasing angle of the peak position of the electron affinity and breakdown field strength of the two-dimensional hole injection layer toward the p-type semiconductor, and the increasing angle of the valley position of the band gap width, thermal conductivity, and conduction band effective state density of the two-dimensional hole injection layer toward the p-type semiconductor have the following relationship: 10°≤σ≤ν≤υ≤η≤β≤90°;

[0013] The electron affinity of the electron blocking layer, the rising angle of the valley position of the breakdown field strength toward the quantum well, and the band gap width, conduction band effective state density, and the falling angle of the peak position of the thermal conductivity of the electron blocking layer toward the quantum well have the following relationship: 10°≤φ≤π≤ρ≤κ≤γ≤90°;

[0014] The electron affinity of the electron blocking layer, the rising angle of the valley position of the breakdown field strength toward the p-type semiconductor, and the band gap width, conduction band effective state density, and the decreasing angle of the peak position of the thermal conductivity of the electron blocking layer toward the p-type semiconductor have the following relationship: 10°≤ψ≤τ≤ω≤ζ≤θ≤90°.

[0015] Furthermore, the angle of decrease of the peak position of the electron affinity and breakdown field strength of the two-dimensional hole injection layer toward the quantum well direction, the angle of increase of the bandgap width, conduction band effective state density, and thermal conductivity valley position toward the quantum well direction of the two-dimensional hole injection layer, the angle of decrease of the peak position of the electron affinity and breakdown field strength of the two-dimensional hole injection layer toward the p-type semiconductor direction, the angle of increase of the bandgap width, thermal conductivity, and conduction band effective state density valley position toward the p-type semiconductor direction of the two-dimensional hole injection layer, the angle of increase of the electron affinity and breakdown field strength valley position of the electron blocking layer toward the p-type semiconductor direction, and the angle of increase of the electron affinity and breakdown field strength valley position of the electron blocking layer toward the p-type semiconductor direction. The rising angle of the peak position of the electron blocking layer, the effective state density of the conduction band, and the thermal conductivity toward the quantum well direction, the falling angle of the electron affinity and the valley position of the breakdown field strength of the electron blocking layer toward the p-type semiconductor direction, and the falling angle of the bandgap width, conduction band effective state density, and the peak position of the thermal conductivity of the electron blocking layer toward the p-type semiconductor direction have the following relationship: 10°≤φ≤π≤ρ≤κ≤γ≤σ≤ν≤υ≤η≤β≤δ≤χ≤μ≤ε≤α≤ψ≤τ≤ω≤ζ≤θ≤90°.

[0016] Furthermore, the two-dimensional hole injection layer is any one or any combination of InGaN, InN, AlInN, GaN, AlGaN, AlInGaN, and AlN; and the electron blocking layer is any one or any combination of GaN, AlGaN, AlInGaN, AlInN, and AlN.

[0017] Furthermore, the bandgap width distribution of the two-dimensional hole injection layer has a function y=A*e x -x+B curve distribution; the thermal conductivity distribution of the two-dimensional hole injection layer has a function y=C*e x -x+D curve distribution; the conduction band effective state density distribution of the two-dimensional hole injection layer has a function y=E*e x -x+F curve distribution; the electron affinity energy distribution of the two-dimensional hole injection layer has a function y=G+x+1 / 2x third quadrant curve distribution; the breakdown field strength distribution of the two-dimensional hole injection layer has a function y=H+x+1 / 2x third quadrant curve distribution; wherein A, B, C, D, E, F, G, H are arbitrary values, and D≤B≤F;

[0018] The bandgap width distribution of the electron blocking layer has a function y=J*l nx / x+K curve distribution; the thermal conductivity distribution of the two-dimensional hole injection layer has a function y=L*x / e x +M curve distribution; the conduction band effective state density distribution of the two-dimensional hole injection layer has a function y = P*l nx / e x +Q curve distribution; the electron affinity energy distribution of the two-dimensional hole injection layer has a function y=R*(e x +e -x ) / (e x -e -x )+S first quadrant curve distribution; the breakdown field strength distribution of the two-dimensional hole injection layer has the function y=T+U*x / l nx first quadrant curve distribution; wherein J, K, L, M, P, Q, R, S, T, U are arbitrary values, and M≤K≤Q;.

[0019] Further, the quantum well is a periodic structure composed of a well layer and a barrier layer, and the well layer of the quantum well is any one or any combination of GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al N, GaAs, GaP, InP, Al GaAs, Al InGaAs, Al Ga InP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the well layer thickness is 5 to 200 angstroms; the barrier layer of the quantum well is GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al N N, GaAs, GaP, InP, Al GaAs, Al InGaAs, AlGa InP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, any one or any combination thereof, the barrier layer having a thickness of 10 to 400 angstroms;

[0020] The n-type semiconductor and the p-type semiconductor include any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; the thickness of the n-type semiconductor is 5 to 60,000 angstroms; the thickness of the p-type semiconductor is 10 to 9,000 angstroms.

[0021] Further, the substrate includes any one of sapphire, diamond, silicon, Ge, SiC, AlN, GaN, GaAs, I nP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / SiO2 / Si Nx composite substrate, sapphire / Si Nx / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / Si Nx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and Li GaO2 composite substrate.

[0022] The beneficial effects of the present invention are as follows: the present invention reduces the hole injection barrier at the interface between the two-dimensional hole injection layer and the quantum well and improves the electron overflow barrier at the interface between the two-dimensional hole injection layer and the electron blocking layer by regulating the interface variation angle and interface uniformity of the electron affinity and breakdown field strength at the interface between the two-dimensional hole injection layer, the electron blocking layer and the p-type semiconductor and the quantum well. At the same time, the interface variation degree and interface uniformity of the conduction band effective state density, bandgap width and thermal conductivity at the interface between the two-dimensional hole injection layer, the electron blocking layer and the p-type semiconductor and the quantum well are controlled, the hole transport efficiency at the interface between the two-dimensional hole injection layer and the quantum well is enhanced, the efficiency of hole injection into the quantum well is improved, and thus the photoelectric conversion efficiency WPE of the semiconductor light-emitting element is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic structural diagram of a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to an embodiment of the present invention;

[0024] Figure 2 This is a SIMS secondary ion mass spectrum of the structure of a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to an embodiment of the present invention;

[0025] Figure 3 This is a SIMS secondary ion mass spectrum of the structure of a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to an embodiment of the present invention (partially enlarged view);

[0026] Figure 4 This is a transmission electron microscope TEM image (p-type region) of a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to an embodiment of the present invention;

[0027] Figure 5 It is a transmission electron microscope TEM image (quantum well) of a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to an embodiment of the present invention;

[0028] Figure 6 It is a transmission electron microscope TEM image (quantum well) of a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to an embodiment of the present invention;

[0029] Figure 7 It is a transmission electron microscope TEM image (quantum well) of a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to an embodiment of the present invention.

[0030] In the figure: 100, substrate; 101, n-type semiconductor; 102, quantum well; 102a, first sub-quantum well; 102b, second sub-quantum well; 102c, third sub-quantum well; 103, two-dimensional hole injection layer; 104, electron blocking layer; 105, p-type semiconductor. DETAILED DESCRIPTION

[0031] The present application is further described in detail below in conjunction with the accompanying drawings. It is necessary to point out here that the following specific implementation methods are only used to further illustrate the present application and cannot be understood as limiting the scope of protection of the present application. Technical personnel in this field can make some non-essential improvements and adjustments to the present application based on the above application content.

[0032] like Figure 1-Figure 7 As shown, a GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer 103 comprises, from bottom to top, a substrate 100, an n-type semiconductor 101, a quantum well 102 and a p-type semiconductor 105, wherein a two-dimensional hole injection layer 103 and an electron blocking layer 104 are provided between the p-type semiconductor 105 and the quantum well; the peak position of the electron affinity of the two-dimensional hole injection layer 103 decreases at an angle α toward the quantum well 102, the peak position of the electron affinity of the two-dimensional hole injection layer 103 decreases at an angle β toward the p-type semiconductor 105, the valley position of the electron affinity of the electron blocking layer 104 increases at an angle γ toward the quantum well 102, and the valley position of the electron affinity of the electron blocking layer 104 increases at an angle θ toward the p-type semiconductor 105, wherein: 20°≤γ≤β≤α≤θ≤90°, and the angle is the tangent inclination angle along the curve;

[0033] The quantum well 102 includes a first quantum well 102a, a second quantum well 102b and a third quantum well 102c;

[0034] The rising angle of the valley position of the bandgap width of the two-dimensional hole injection layer 103 toward the quantum well 102 is δ, the rising angle of the valley position of the bandgap width of the two-dimensional hole injection layer 103 toward the p-type semiconductor 105 is σ, the decreasing angle of the peak position of the bandgap width of the electron blocking layer 104 toward the quantum well 102 is φ, and the decreasing angle of the peak position of the bandgap width of the electron blocking layer 104 toward the p-type semiconductor 105 is ψ, wherein: 10°≤φ≤σ≤δ≤ψ≤90°.

[0035] Among them, the two-dimensional hole injection layer 103 refers to a thin layer structure specifically designed for effectively injecting and controlling holes (i.e., positive charge carriers); by introducing the two-dimensional hole injection layer 103, the energy loss and non-radiative recombination of carriers during the injection process can be effectively reduced, thereby improving the overall efficiency of the device, and the optimized hole injection layer helps to achieve higher light output power at a lower driving current and improve the performance indicators of the laser, such as spectral characteristics and stability.

[0036] Electron affinity refers to the energy released when an atom or molecule gains an extra electron. Specifically, electron affinity is defined as the energy released when a gaseous atom or molecule absorbs an electron and becomes a negative ion;

[0037] The bandgap refers to the energy gap between the conduction band and the valence band in a semiconductor material, which determines how electrons move in the material and how the material interacts with light.

[0038] In a specific embodiment, the rising angle of the valley position of the conduction band effective state density of the two-dimensional hole injection layer 103 toward the quantum well 102 is μ, the rising angle of the valley position of the conduction band effective state density of the two-dimensional hole injection layer 103 toward the p-type semiconductor 105 is υ, the descending angle of the peak position of the conduction band effective state density of the electron blocking layer 104 toward the quantum well 102 is ρ, and the descending angle of the peak position of the conduction band effective state density of the electron blocking layer 104 toward the p-type semiconductor 105 is ω, wherein: 15°≤ρ≤υ≤μ≤ω≤90°.

[0039] In a specific embodiment, the descending angle of the peak position of the breakdown field strength of the two-dimensional hole injection layer 103 toward the quantum well 102 is ε, the descending angle of the peak position of the breakdown field strength of the two-dimensional hole injection layer 103 toward the p-type semiconductor 105 is η, the rising angle of the valley position of the breakdown field strength of the electron blocking layer 104 toward the quantum well 102 is κ, and the rising angle of the valley position of the breakdown field strength of the electron blocking layer 104 toward the p-type semiconductor 105 is ζ, wherein: 17°≤κ≤η≤ε≤ζ≤90°.

[0040] Breakdown field strength refers to the phenomenon that when the electric field strength reaches a certain value in a semiconductor, the material breaks down. At this time, the resistance of the semiconductor drops sharply, causing the current to increase sharply. This value is usually used to measure the voltage resistance of semiconductor materials.

[0041] In a specific embodiment, the rising angle of the valley position of the thermal conductivity of the two-dimensional hole injection layer 103 toward the quantum well 102 is χ, the rising angle of the valley position of the thermal conductivity of the two-dimensional hole injection layer 103 toward the p-type semiconductor 105 is ν, the decreasing angle of the peak position of the thermal conductivity of the electron blocking layer 104 toward the quantum well 102 is π, and the decreasing angle of the peak position of the thermal conductivity of the electron blocking layer 104 toward the p-type semiconductor 105 is τ, wherein: 13°≤π≤ν≤χ≤τ≤90°.

[0042] Thermal conductivity refers to the ability of a material to conduct heat. It is usually used to describe the efficiency of semiconductors in the heat conduction process. It refers to the amount of heat conducted per unit area of ​​material under the action of a temperature gradient per unit time.

[0043] In a specific embodiment, the descending angle of the peak position of the electron affinity and breakdown field strength of the two-dimensional hole injection layer 103 toward the quantum well 102, and the rising angle of the valley position of the bandgap width, conduction band effective state density, and thermal conductivity of the two-dimensional hole injection layer 103 toward the quantum well 102 have the following relationship: 10°≤δ≤χ≤μ≤ε≤α≤90°;

[0044] The descending angle of the peak position of the electron affinity and breakdown field strength of the two-dimensional hole injection layer 103 toward the p-type semiconductor 105, and the rising angle of the valley position of the band gap width, thermal conductivity, and conduction band effective state density of the two-dimensional hole injection layer 103 toward the p-type semiconductor 105 have the following relationship: 10°≤σ≤ν≤υ≤η≤β≤90°;

[0045] The electron affinity of the electron blocking layer 104 and the rising angle of the valley position of the breakdown field strength toward the quantum well 102, and the band gap width, conduction band effective state density, and the falling angle of the peak position of the thermal conductivity of the electron blocking layer 104 toward the quantum well 102 have the following relationship: 10°≤φ≤π≤ρ≤κ≤γ≤90°;

[0046] The electron affinity of the electron blocking layer 104 and the rising angle of the valley position of the breakdown field strength toward the p-type semiconductor 105, and the band gap width, conduction band effective state density, and the decreasing angle of the peak position of the thermal conductivity of the electron blocking layer 104 toward the p-type semiconductor 105 have the following relationship: 10°≤ψ≤τ≤ω≤ζ≤θ≤90°.

[0047] In a specific embodiment, the electron affinity and breakdown field strength peak positions of the two-dimensional hole injection layer 103 are decreased at an angle toward the quantum well 102, the bandgap width, conduction band effective state density, and thermal conductivity valley position of the two-dimensional hole injection layer 103 are increased at an angle toward the quantum well 102, the electron affinity and breakdown field strength peak positions of the two-dimensional hole injection layer 103 are decreased at an angle toward the p-type semiconductor 105, the bandgap width, thermal conductivity, and conduction band effective state density valley position of the two-dimensional hole injection layer 103 are increased at an angle toward the p-type semiconductor 105, the electron affinity and breakdown field strength peak positions of the two-dimensional hole injection layer 103 are increased at an angle toward the p-type semiconductor 105, the electron affinity and breakdown field strength peak positions of the two-dimensional hole injection layer 104 ...3 are increased at an angle toward the p-type semiconductor 105, the electron affinity and breakdown field strength peak positions of the two-dimensional hole injection layer 104 are increased at an angle toward the p-type semiconductor 105, the electron affinity and breakdown field strength peak positions of the two-dimensional hole injection layer 104 are increased at an angle toward the p-type semiconductor 105, the electron affinity and breakdown field strength peak positions of the The rising angle of the valley position of the field intensity toward the quantum well 102, the decreasing angle of the bandgap width, conduction band effective state density, and thermal conductivity peak position of the electron blocking layer 104 toward the quantum well 102, the rising angle of the electron affinity and breakdown field intensity valley position of the electron blocking layer 104 toward the p-type semiconductor 105, and the decreasing angle of the bandgap width, conduction band effective state density, and thermal conductivity peak position of the electron blocking layer 104 toward the p-type semiconductor 105 have the following relationship: 10°≤φ≤π≤ρ≤κ≤γ≤σ≤ν≤υ≤η≤β≤δ≤χ≤μ≤ε≤α≤ψ≤τ≤ω≤ζ≤θ≤90°.

[0048] By regulating the interface variation angle and interface uniformity of the electron affinity and breakdown field strength at the interface between the two-dimensional hole injection layer 103, the electron blocking layer 104 and the p-type semiconductor 105 and the quantum well 102, the hole injection barrier at the interface between the two-dimensional hole injection layer 103 and the quantum well 102 is reduced and the electron overflow barrier at the interface between the two-dimensional hole injection layer 103 and the electron blocking layer 104 is increased. At the same time, the interface variation degree and interface uniformity of the conduction band effective state density, bandgap width and thermal conductivity at the interface between the two-dimensional hole injection layer 103, the electron blocking layer 104 and the p-type semiconductor 105 and the quantum well 102 are controlled to enhance the hole transport efficiency at the interface between the two-dimensional hole injection layer 103 and the quantum well 102, and improve the efficiency of hole injection into the quantum well 102, thereby improving the photoelectric conversion efficiency WPE of the semiconductor light-emitting element, and the photoelectric conversion efficiency is increased from 40% to 60% to 60% to 85%.

[0049] In a specific implementation, the two-dimensional hole injection layer 103 is any one or any combination of InGaN, InN, AlInN, GaN, AlGaN, AlInGaN, and AlN; the electron blocking layer 104 is any one or any combination of GaN, AlGaN, AlInGaN, AlInN, and AlN.

[0050] In a specific embodiment, the bandgap width distribution of the two-dimensional hole injection layer 103 has a function y=A*e x-x+B curve distribution; the thermal conductivity distribution of the two-dimensional hole injection layer 103 has a function y=C*e x -x+D curve distribution; the conduction band effective state density distribution of the two-dimensional hole injection layer 103 has a function y=E*e x -x+F curve distribution; the electron affinity energy distribution of the two-dimensional hole injection layer 103 has a function y=G+x+1 / 2x third quadrant curve distribution; the breakdown field strength distribution of the two-dimensional hole injection layer 103 has a function y=H+x+1 / 2x third quadrant curve distribution; wherein A, B, C, D, E, F, G, H are arbitrary values, and D≤B≤F;

[0051] The bandgap width distribution of the electron blocking layer 104 has a function y=J*l nx / x+K curve distribution; the thermal conductivity distribution of the two-dimensional hole injection layer 103 has a function y=L*x / e x +M curve distribution; the conduction band effective state density distribution of the two-dimensional hole injection layer 103 has a function y=P*l nx / e x +Q curve distribution; the electron affinity energy distribution of the two-dimensional hole injection layer 103 has a function y=R*(e x +e -x ) / (e x -e -x )+S first quadrant curve distribution; the breakdown field strength distribution of the two-dimensional hole injection layer 103 has a first quadrant curve distribution of the function y=T+U*x / l nx; wherein J, K, L, M, P, Q, R, S, T, and U are arbitrary values, and M≤K≤Q.

[0052] In a specific embodiment, the quantum well 102 is a periodic structure composed of a well layer and a barrier layer, and the well layer of the quantum well 102 is any one or any combination of GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al N, GaAs, GaP, InP, Al GaAs, Al InGaAs, Al Ga InP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the well layer thickness is 5 to 200 angstroms; the barrier layer of the quantum well 102 is GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al N, GaAs, GaP, InP, Al GaAs, Al InGaAs, Al GaInP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, any one or any combination thereof, the barrier layer having a thickness of 10 to 400 angstroms;

[0053] The n-type semiconductor 101 and the p-type semiconductor 105 include any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; the thickness of the n-type semiconductor 101 is 5 to 60,000 angstroms; the thickness of the p-type semiconductor 105 is 10 to 9,000 angstroms.

[0054] In a specific embodiment, the substrate 100 includes any one of sapphire, diamond, silicon, Ge, SiC, Al N, GaN, GaAs, InP, I nAs, GaSb, sapphire / SiO2 composite substrate, sapphire / SiO2 / SiNx composite substrate, sapphire / SiNx / SiO2 composite substrate, sapphire / Al N composite substrate, sapphire / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0055] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the present invention. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention.

Claims

1. A GaN-based semiconductor light-emitting element having a two-dimensional hole injection layer, comprising, from bottom to top, a substrate, an n-type semiconductor, a quantum well and a p-type semiconductor, characterized in that: A two-dimensional hole injection layer and an electron blocking layer are provided between the p-type semiconductor and the quantum well; the peak position of the electron affinity of the two-dimensional hole injection layer decreases at an angle α toward the quantum well, the peak position of the electron affinity of the two-dimensional hole injection layer decreases at an angle β toward the p-type semiconductor, the valley position of the electron affinity of the electron blocking layer increases at an angle γ toward the quantum well, and the valley position of the electron affinity of the electron blocking layer increases at an angle θ toward the p-type semiconductor, wherein: 20°≤γ≤β≤α≤θ≤90°, and the angle is the inclination angle of the tangent along the curve; The rising angle of the valley position of the bandgap width of the two-dimensional hole injection layer toward the quantum well direction is δ, the rising angle of the valley position of the bandgap width of the two-dimensional hole injection layer toward the p-type semiconductor direction is σ, the descending angle of the peak position of the bandgap width of the electron blocking layer toward the quantum well direction is φ, and the descending angle of the peak position of the bandgap width of the electron blocking layer toward the p-type semiconductor direction is ψ, wherein: 10°≤φ≤σ≤δ≤ψ≤90°.

2. A GaN-based semiconductor light-emitting element having a two-dimensional hole injection layer according to claim 1, characterized in that: The rising angle of the valley position of the conduction band effective state density of the two-dimensional hole injection layer toward the quantum well is μ, the rising angle of the valley position of the conduction band effective state density of the two-dimensional hole injection layer toward the p-type semiconductor is υ, the descending angle of the peak position of the conduction band effective state density of the electron blocking layer toward the quantum well is ρ, and the descending angle of the peak position of the conduction band effective state density of the electron blocking layer toward the p-type semiconductor is ω, wherein: 15°≤ρ≤υ≤μ≤ω≤90°.

3. A GaN-based semiconductor light-emitting element having a two-dimensional hole injection layer according to claim 2, characterized in that: The descending angle of the peak position of the breakdown field strength of the two-dimensional hole injection layer toward the quantum well is ε, the descending angle of the peak position of the breakdown field strength of the two-dimensional hole injection layer toward the p-type semiconductor is η, the rising angle of the valley position of the breakdown field strength of the electron blocking layer toward the quantum well is κ, and the rising angle of the valley position of the breakdown field strength of the electron blocking layer toward the p-type semiconductor is ζ, wherein: 17°≤κ≤η≤ε≤ζ≤90°.

4. A GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to claim 3, characterized in that: The rising angle of the valley position of the thermal conductivity of the two-dimensional hole injection layer toward the quantum well is χ, the rising angle of the valley position of the thermal conductivity of the two-dimensional hole injection layer toward the p-type semiconductor is ν, the decreasing angle of the peak position of the thermal conductivity of the electron blocking layer toward the quantum well is π, and the decreasing angle of the peak position of the thermal conductivity of the electron blocking layer toward the p-type semiconductor is τ, wherein: 13°≤π≤ν≤χ≤τ≤90°.

5. A GaN-based semiconductor light-emitting element having a two-dimensional hole injection layer according to claim 4, characterized in that: The descending angle of the peak position of the electron affinity and breakdown field strength of the two-dimensional hole injection layer toward the quantum well, and the rising angle of the band gap width, conduction band effective state density, and thermal conductivity valley position toward the quantum well of the two-dimensional hole injection layer have the following relationship: 10°≤δ≤χ≤μ≤ε≤α≤90°; The decreasing angle of the peak position of the electron affinity and breakdown field strength of the two-dimensional hole injection layer toward the p-type semiconductor, and the increasing angle of the valley position of the band gap width, thermal conductivity, and conduction band effective state density of the two-dimensional hole injection layer toward the p-type semiconductor have the following relationship: 10°≤σ≤ν≤υ≤η≤β≤90°; The electron affinity of the electron blocking layer, the rising angle of the valley position of the breakdown field strength toward the quantum well, and the band gap width, conduction band effective state density, and the falling angle of the peak position of the thermal conductivity of the electron blocking layer toward the quantum well have the following relationship: 10°≤φ≤π≤ρ≤κ≤γ≤90°; The electron affinity of the electron blocking layer, the rising angle of the valley position of the breakdown field strength toward the p-type semiconductor, and the band gap width, conduction band effective state density, and the decreasing angle of the peak position of the thermal conductivity of the electron blocking layer toward the p-type semiconductor have the following relationship: 10°≤ψ≤τ≤ω≤ζ≤θ≤90°.

6. A GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to claim 5, characterized in that: The descending angle of the peak position of the electron affinity and breakdown field strength of the two-dimensional hole injection layer toward the quantum well direction, the rising angle of the bandgap width, conduction band effective state density, and thermal conductivity valley position of the two-dimensional hole injection layer toward the quantum well direction, the descending angle of the peak position of the electron affinity and breakdown field strength of the two-dimensional hole injection layer toward the p-type semiconductor direction, the rising angle of the bandgap width, thermal conductivity, and conduction band effective state density valley position of the two-dimensional hole injection layer toward the p-type semiconductor direction, the electron affinity and breakdown field strength valley position of the electron blocking layer The rising angle toward the quantum well, the descending angle of the bandgap width, conduction band effective state density, and peak position of thermal conductivity of the electron blocking layer toward the quantum well, the rising angle of the electron affinity and valley position of the breakdown field strength of the electron blocking layer toward the p-type semiconductor, and the descending angle of the bandgap width, conduction band effective state density, and peak position of thermal conductivity of the electron blocking layer toward the p-type semiconductor have the following relationship: 10°≤φ≤π≤ρ≤κ≤γ≤σ≤ν≤υ≤η≤β≤δ≤χ≤μ≤ε≤α≤ψ≤τ≤ω≤ζ≤θ≤90°.

7. A GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to claim 6, characterized in that: The two-dimensional hole injection layer is any one or any combination of InGaN, InN, AlInN, GaN, AlGaN, AlInGaN, and AlN; the electron blocking layer is any one or any combination of GaN, AlGaN, AlInGaN, AlInN, and AlN.

8. The GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to claim 7, characterized in that: The bandgap width distribution of the two-dimensional hole injection layer has a function y=A*e x -x+B curve distribution; the thermal conductivity distribution of the two-dimensional hole injection layer has a function y=C*e x -x+D curve distribution; the conduction band effective state density distribution of the two-dimensional hole injection layer has a function y=E*e x -x+F curve distribution; the electron affinity energy distribution of the two-dimensional hole injection layer has a function y=G+x+1 / 2x third quadrant curve distribution; the breakdown field strength distribution of the two-dimensional hole injection layer has a function y=H+x+1 / 2x third quadrant curve distribution; wherein A, B, C, D, E, F, G, H are arbitrary values, and D≤B≤F; The bandgap width distribution of the electron blocking layer has a function y=J*lnx / x+K curve distribution; the thermal conductivity distribution of the two-dimensional hole injection layer has a function y=L*x / e x +M curve distribution; the conduction band effective state density distribution of the two-dimensional hole injection layer has a function y=P*lnx / e x +Q curve distribution; the electron affinity energy distribution of the two-dimensional hole injection layer has a function y=R*(e x +e -x ) / (e x -e -x )+S first quadrant curve distribution; the breakdown field strength distribution of the two-dimensional hole injection layer has a first quadrant curve distribution of the function y=T+U*x / lnx; wherein J, K, L, M, P, Q, R, S, T, and U are arbitrary values, and M≤K≤Q.

9. The GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to claim 1, characterized in that: The quantum well is a periodic structure composed of a well layer and a barrier layer, and the well layer of the quantum well is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, Al Any one or any combination of InAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the well layer thickness is 5 to 200 angstroms; the barrier layer of the quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the barrier layer thickness is 10 to 400 angstroms; The n-type semiconductor and the p-type semiconductor include any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; the thickness of the n-type semiconductor is 5 to 60,000 angstroms; the thickness of the p-type semiconductor is 10 to 9,000 angstroms.

10. The GaN-based semiconductor light-emitting element with a two-dimensional hole injection layer according to claim 1, characterized in that: The substrate includes any one of sapphire, diamond, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / SiO2 / SiNx composite substrate, sapphire / SiNx / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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