Power module and inverter having the same
By arranging a buffer circuit in the power module attenuates high-frequency oscillation, the problems of low efficiency and large losses in the prior art are solved, and efficient and low-loss power conversion and fast switching are realized.
Patent Information
- Application Number
- CN202380044096.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2022-05-31
- Filing Date
- 2023-05-24
- Publication Date
- 2025-01-10
AI Technical Summary
The existing power modules have low efficiency and high losses when converting current or voltage, especially in electric-driven motor vehicles, which leads to slow switching speed of transistor switches and large losses.
A power module is designed, by arranging a buffer circuit on the circuit carrier, and placed directly and inductively at the source of high-frequency oscillation, using buffer circuits such as capacitors and resistors to attenuate high-frequency oscillation, maximizing efficiency, and achieving rapid switching and Low loss transistor switch.
Effectively prevent high-frequency oscillation from damage to power modules and other circuits, realize high power and low loss operation, and improve the efficiency and switching speed of power modules.
Smart Images
Figure CN119301763A_ABST
Abstract
Description
Technical field:
[0001] The present invention relates to a power module and an inverter having the power module.
[0002] Background technology and invention tasks:
[0003] Power modules with transistor switches for converting current or voltage and inverters with power modules, for example for providing phase currents for an electric machine, are known and are used in particular in drive systems of electrically driven motor vehicles.
[0004] There is a general demand to make power modules more efficient and at the same time have lower power losses.
[0005] Accordingly, the object of the present application is to provide a power module which has high efficiency and at the same time low losses. Summary of the invention:
[0006] This object is achieved by the subject matter of the independent claim. Advantageous embodiments are the subject matter of the dependent claims.
[0007] According to a first aspect of the invention, a power module for converting current or voltage, in particular for use in an inverter for providing a phase current for an electric machine of an electrically driven motor vehicle, is provided.
[0008] The power module has a circuit carrier in the form of a printed circuit board or a ceramic substrate or other known comparable circuit carriers, which has a first electrical connection surface for surface mounting a first transistor switch and a second electrical connection surface for surface mounting a second transistor switch as well as a plurality of third electrical connection surfaces.
[0009] Here, the first connection surface, the second connection surface and the third connection surface are embodied or arranged on the same side of the circuit carrier in a manner electrically insulated from one another. The first connection surface and the second connection surface each extend along the extension direction of the circuit carrier. The third connection surface is electrically insulated from one another (and from the first connection surface and the second connection surface) and is embodied or arranged side by side in the extension direction and between the first connection surface and the second connection surface.
[0010] The above-mentioned connection surfaces are respectively connected conductive surfaces made of metal or metal alloy, such as copper or copper alloy. In this case, depending on the application area of the power module, the connection surfaces are designed to conduct currents of up to several hundred amperes, with corresponding layer thicknesses and surface widths of the respective connection surfaces. In particular, depending on the power requirements of the power module, the connection surfaces are designed in a correspondingly planar manner for connecting a plurality of transistor switches in parallel.
[0011] The power module further comprises a plurality of buffer circuits or buffer elements, for example in the form of RC elements, which are respectively at least partially formed on a corresponding one of the plurality of (partial) regions on the upper side of the circuit carrier, wherein the regions respectively partially span one of the third connection surface and the second connection surface. Here, the regions respectively partially overlap with the corresponding third connection surface and the second connection surface. The regions respectively consist of an edge region of the third connection surface adjacent to the second connection surface, an edge region of the second connection surface adjacent to the third connection surface, and a possible intermediate region, which extends from the second connection surface to the third connection surface. The edge region is in particular only an area share of the base region, for example not more than 50%, 30%, 20% or 10%. The intermediate region in particular contains an electrical separation structure that electrically insulates the two connection surfaces, for example a groove between the connection surfaces. Here, conductive features that can have different potentials are referred to as "electrically insulating". In addition, an electrically insulating printed conductor section can be in the intermediate region, which is in particular used as a connecting element in the buffer circuit. The snubber circuit is therefore located in each case in the region in which the second connection area and the third connection area adjoin one another and in particular in the region between the circuit carrier on the one hand and the second or third busbar on the other hand.
[0012] In this case, the snubber circuit includes not only the circuit components of the snubber element, such as capacitors and resistors (in the case of RC elements), but also the (internal) electrical connections between these circuit components, such as conductor tracks formed on the circuit carrier, and also the (external) electrical connections from the respective snubber element to the respective corresponding (external) circuit components of the power module, such as conductor tracks formed on the circuit carrier or bonding connections bonded to the corresponding components. The snubber circuit is electrically connected to the respective corresponding third connection surface and the second connection surface via these external electrical connections. The internal or external electrical connections of the circuit components and the respective snubber element are at least partially, preferably predominantly, in particular completely, implemented or arranged on a respective one of a plurality of regions on the upper side of the circuit carrier, wherein each individual region partially spans one of the third connection surface and the second connection surface and thus electrically connects the two connection surfaces via the shortest connection path.
[0013] Depending on the function, the power module generates high-frequency oscillations in the current with voltage peaks during operation, which can occur when switching inductive loads such as motors and can lead to functional disturbances or even to failures of the power module or other circuits electrically connected to the power module. These high-frequency oscillations prevent the power module from switching the transistor switches more quickly and thus from operating the power module at high power with low power loss.
[0014] The source of the high-frequency oscillations in the current with the voltage peaks is the transistor switches which are switched on / off in a clocked manner when the power module is operated and are therefore present in the (closed) circuit between the positive voltage side and negative voltage side supply current connections of the power module and the corresponding transistor switches. In the case of the above-described power module, the two supply current connections are each formed by the second connection surface or the third connection surface on the same upper side of the circuit carrier. If the power module is part of an inverter, the first connection surface is formed as a phase current connection of the power module.
[0015] By arranging or electrically connecting the buffer circuit as an attenuator directly on a corresponding area (such as the second connection surface or the third connection surface) on the same upper side of the circuit carrier, the buffer circuit is placed and electrically connected directly and with low inductance at the source of the high-frequency oscillation, and the corresponding area partially spans the second connection surface and the corresponding corresponding third connection surface and thus spans the two supply current connections (to the transistor switch). As a result, the buffer circuit can efficiently attenuate the high-frequency oscillation directly at its source before the high-frequency oscillation can propagate to other circuit components of the power module and other circuit devices connected to the power module via the supply current connection and may cause interruptions or other damage there. Due to the small distance of the buffer circuit to the source of the high-frequency oscillation, the efficiency of the buffer circuit is maximized. Accordingly, the transistor switch can be switched quickly and with low loss at a high switching speed. Therefore, the power module can be operated with high power and at the same time with low loss. In addition, this enables the power module to use fast-switching and low-loss transistor switches.
[0016] The power module described above can be used in (power) inverters, (power) DC voltage converters, (power) converters or comparable (power) electronic devices where high switching speeds are required with simultaneously low power losses in the transistor switches.
[0017] For example, the snubber circuits each have a capacitor and / or a resistor, wherein the capacitor and / or the resistor of the respective snubber circuit are each arranged on a respective corresponding region.
[0018] For example, the snubber circuits each have (at least) one bonding connection, wherein the bonding connection of the respective snubber circuit each (at least partially) spans the respective corresponding region.
[0019] For example, the snubber circuits each have at least one conductor track connection (or conductor track section) which is formed on the same upper side of the circuit carrier on which the connection surface is formed. The conductor track connection is electrically insulated or separated from the connection surface.
[0020] With the above capacitors, resistors, bonding connections and / or conductor track sections, the snubber circuit can be realized simply and cost-effectively using (only) standard components with many different implementations. In addition, the snubber circuit can be easily adapted to various requirements, such as different power requirements.
[0021] For example, the first connection pad and / or the second connection pad and / or the third connection pad are embodied as conductor tracks which are formed on the same side of the circuit carrier.
[0022] For example, the first connecting surface has a first connecting section, which extends transversely to the extension direction and in the direction toward the second connecting surface. Here, the first connecting section and the third connecting surface are arranged alternately or staggered with each other in the extension direction. Alternatively or additionally to this, the second connecting surface, for example, has a second connecting section, which extends transversely to the extension direction and in the direction toward the first connecting surface. In this case, the second connecting section and the third connecting surface are arranged alternately or staggered with each other in the extension direction.
[0023] The power module further comprises, for example, a plurality of first transistor switches which are mounted on the first connection surface and are respectively electrically connected to the corresponding third connection surface via a bonding connection. Here, one, two or more first transistor switches can be electrically connected to the same corresponding third connection surface.
[0024] The power module furthermore has, for example, a plurality of second transistor switches which are mounted on the second connection area and are each electrically connected to the first connection area via a bonding connection.
[0025] The first transistor switch and / or the second transistor switch are formed, for example, as silicon carbide transistor switches.
[0026] The snubber circuits enable fast and low-loss switching of transistor switches, since they are arranged directly at the source of the high-frequency oscillations and can effectively damp the high-frequency oscillations directly at the source and thus effectively prevent their indirect damage. Accordingly, fast-switching and low-loss silicon carbide transistor switches can be used in power modules.
[0027] The power module further comprises, for example, a first busbar, which is (for example, shaped like a comb and) has a first connection projection or connection tongue (or connection leg), via which the first busbar is placed on the first connection surface and is electrically connected to the first connection surface. Alternatively or in addition to the first busbar, the power module comprises a second busbar, which is (for example, also shaped like a comb and) has a second connection projection or connection tongue (or connection leg), via which the second busbar is placed on the second connection surface and is electrically connected to the second connection surface. Alternatively or in addition to the first or second busbar, the power module comprises a third busbar, which is (for example, also shaped like a comb and) has a third connection projection or connection tongue (or connection leg), via which the third busbar is placed on the respective third connection surface and is electrically connected to the respective third connection surface.
[0028] In the case of a power module having a second and a third busbar, the second and the third busbar are arranged, for example (particularly with the exception of the respective first connection lugs or the respective second connection lugs) to a large extent overlapping one another.
[0029] For example, the second and / or third connecting projection each extends at least partially across one of the following regions, which each partially spans one of the third connecting surface and the second connecting surface.
[0030] For example, the second and / or third connection protrusions are respectively shaped such that a (intermediate) space is located or formed between the respective second or respective third connection protrusion on the one hand and the respective corresponding region on the other hand, across which the respective second connection protrusion or the respective third connection protrusion extends. One of the buffer circuits is respectively at least partially arranged or placed in a respective one of these spaces.
[0031] These intermediate spaces allow a compact and space-saving design of the snubber circuit without requiring additional installation space which could result in larger dimensions of the structural volume of the power module, in particular an increase in the structural height of the power module.
[0032] Preferably, the first connection surface and the second connection surface each extend along the extension direction from a first end region of the circuit carrier to a second end region of the circuit carrier facing away from the first end region in the extension direction. In this case, the first connection surface and the second connection surface can extend in particular parallel to each other.
[0033] For example, the circuit carrier has two outer strip sections facing away from each other and a middle strip section between the two outer strip sections. Here, the strip section extends, for example, along the extension direction from a first end region of the circuit carrier to a second end region of the circuit carrier. Furthermore, the first and second connection surfaces are formed, for example, distributed on each of the two outer strip sections, wherein the third connection surface is formed, for example, on the middle strip section.
[0034] For example, the first or the second connecting section—depending on which of the connecting sections has the power module—is also formed on the middle strip section.
[0035] For example, the first connection area, the second connection area and the third connection area as well as the above-mentioned region are located on the same surface of the circuit carrier or are formed on the same surface of the circuit carrier.
[0036] According to a second aspect of the present invention, an inverter is provided, in particular for providing phase currents for an electric machine of an electrically driven motor vehicle.
[0037] The inverter has at least one of the above-described power modules, in particular for providing a phase current for an electric machine, and a driver circuit for operating the power module, as well as a housing, wherein the power module and the driver circuit are arranged in the housing and are electrically connected to one another.
[0038] The second connection surface on the one hand and the third connection surface on the other hand are preferably supply potential connections (for DC voltage). The first connection surface is in particular a load connection surface. In the case of an equipped power module, the first transistor switches are connected in parallel to each other, wherein the second transistor switches are also connected in parallel to each other. The first transistors are in particular connected in parallel via a third busbar or connected in parallel via a connection to the same third connection surface. The first transistor and the second transistor form a half bridge in pairs. The first transistors in particular form the low-side switching elements of the half bridges, and the second transistors form the high-side switching elements of the half bridges. The connection point in the half bridge (i.e. the connection between the first transistor on the one hand and the second transistor on the other hand) corresponds to the first connection surface. The buffer circuit is located in the following area, i.e. at the area, the second connection surface corresponding to the first supply potential (connection) is adjacent to the third connection surface corresponding to the second supply potential (connection). Therefore, only a very short line is required to connect the buffer circuit to the supply potential. The connection of the supply potential (via the busbar) can be carried out from one side, while the opposite side can be used to connect the connection point (phase or load connection), for example by means of another busbar, and is therefore rarely coupled to the supply potential. The snubber circuit can be arranged between a busbar of the supply potential and the circuit carrier. Description of the drawings:
[0039] Exemplary embodiments of the present invention are explained in more detail below with reference to the accompanying drawings.
[0040] Figure 1 A first schematic top view shows a portion of a power module according to an exemplary embodiment of the present invention;
[0041] Figure 2 A second schematic top view shows Figure 1 The buffer circuit of the power module;
[0042] Figure 3A , 3B Two other schematic top views are shown Figure 1 other components of the power module; and
[0043] Figure 4 Shown in a schematic cross-sectional view Figure 1 Side view of a partial section of a power module. Specific implementation method:
[0044] Figure 1 A first schematic plan view shows a section of a power module LM according to an exemplary embodiment of the present invention.
[0045] In this embodiment, the power module LM is formed as a half-bridge module of an inverter for providing a phase current for an electric machine.
[0046] The power module LM has a circuit carrier ST in the form of a ceramic substrate, which has a first electrical connection surface F1, a second electrical connection surface F2 and a plurality of third electrical connection surfaces F3 on its upper side. The connection surfaces F1, F2, F3 are formed as printed conductors on the same upper side of the circuit carrier ST, which are electrically insulated or separated from each other. The first and second connection surfaces F1, F2 are located on two outer strip sections A1, A2 of the circuit carrier ST that face away from each other and extend in each case along the extension direction ER of the circuit carrier ST.
[0047] The first connection surface F1 has a plurality of wide connection sections AB which extend parallel to one another and transversely to the extension direction ER and in a serrated (or comb-shaped) manner in the direction toward the second connection surface F2 and thus extend between the two outer strip sections A1, A2 on the middle strip section A3 of the circuit carrier ST. The third connection surface F3 is formed on the middle strip section A3 and thus between the first and second connection surfaces F1, F2. Here, the third connection surfaces F3 and the connection sections AB alternate in the extension direction ER. The third connection surfaces F3 are electrically insulated from one another and from the first and second connection surfaces F1, F2 and thus also from the connection sections AB of the first connection surface F1.
[0048] In this case, the strip sections A1 , A2 , A3 extend parallel to one another and along an extension direction ER from a first end region E1 of the circuit carrier ST to a second end region E2 of the circuit carrier ST facing away from the first end region E1 .
[0049] Correspondingly, the first connection surface F1 and the second connection surface F2 also each extend along the extension direction ER from the first end region E1 to the second end region E2 of the circuit carrier ST and extend parallel to one another.
[0050] In this case, the first connection surface F1 , the second connection surface F2 and the third connection surface F3 as well as the region B are located on the same surface of the circuit carrier ST and therefore on the same plane.
[0051] The power module LM furthermore has a set of first transistor switches T1, which are surface-mounted on the first connection surface F1 in a manner placed one behind the other in the extension direction ER and are therefore electrically connected to the first connection surface F1 on the bottom side. The first transistor switches T1 are furthermore electrically connected to a respective one of the third connection surfaces F3 via a bonding connection V2. The power module LM furthermore has a set of second transistor switches T2, which are surface-mounted on the second connection surface F2 in a manner placed one behind the other in the extension direction ER and are therefore electrically connected to the second connection surface F2 on the bottom side. The second transistor switches T2 are furthermore electrically connected to a respective one of the corresponding connection sections AB of the first connection surface F1 and thus to the first connection surface F1 via a further bonding connection V3. In this embodiment, the first and second transistor switches T1, T2 are formed as fast-switching SiC transistors (SiC: “Silicon Carbide”).
[0052] The power module LM further comprises a set of snubber circuits or snubber elements, each of which is at least partially formed on a corresponding one of the plurality of regions B of the circuit carrier ST. Here, the region B is located on the same surface of the circuit carrier ST as the above-mentioned connection surfaces F1, F2, F3, and each partially spans one of the third connection surface F3 and the second connection surface F2. The snubber circuits are electrically connected to the corresponding third connection surface F3 and the second connection surface F2, respectively.
[0053] Figure 2 A second schematic top view shows Figure 1 An exemplary embodiment of a snubber circuit of a power module LM is described below.
[0054] exist Figure 2In FIG. 1 , only one of the above-mentioned buffer circuits is drawn as an example. The buffer circuit has a printed conductor section L, a capacitor C and a resistor R arranged in a corresponding area B. Here, when viewed in the extension direction ER, the printed conductor section L is located between two adjacent connecting sections AB of the first connecting surface F1, and when viewed in a direction transverse to the extension direction ER, it is located between the corresponding third connecting surface F3 and the second connecting surface F2. The printed conductor section L is electrically insulated or separated from the two adjacent connecting sections AB, the corresponding third connecting surface F3 and the second connecting surface F2. The capacitor C is partially located on the corresponding third connecting surface F3 and partially located on the printed conductor section L and is electrically connected to the corresponding third connecting surface F3 and the printed conductor section L. Therefore, the capacitor C partially spans the corresponding third connecting surface F3 and the printed conductor section L. The resistor R is partially located on the printed conductor section L and partially located on the second connecting surface F2 and is electrically connected to the printed conductor section L and the second connecting surface F2. Therefore, the resistor R partially spans the printed conductor section L and the second connecting surface F2. Therefore, the snubber circuit connects the corresponding third connection surface F3 to the second connection surface F2 and is designed to reduce the high-frequency current component in the direct current of the power module LM flowing between the third connection surface F3 on the one hand and the second connection surface F2 on the other hand during operation of the power module LM and to limit the voltage peak in the direct current.
[0055] Figure 3A , 3B The above-mentioned power module LM is shown in other schematic top views respectively, and the power module has other circuit components: a busbar ("Busbar" in English) made of metal or metal alloy, especially made of copper or copper alloy, which respectively forms the phase current connection (first busbar P), the positive voltage side supply current connection (second busbar H+) or the negative voltage side supply current connection (third busbar H-) of the power module LM.
[0056] The three busbars P, H+, H− are substantially shaped like a rake or comb and each have a main portion HT1, HT2 shaped in a planar manner (see Figure 4 ), HT3 and connecting protrusions (or connecting tongues or connecting legs) Z1, Z2, Z3 formed in a pointed tooth shape (or comb shape) at the corresponding main parts HT1, HT2, HT3.
[0057] Here, the first busbar P is placed on the first connection surface F1 via its connection protrusion Z1 and is electrically contacted with the first connection surface F1 multiple times, such as Figure 3A The main part HT1 of the first busbar P extends substantially above the first connection face F1 and parallel to the upper side of the circuit carrier ST.
[0058] Similarly, the second busbar H+ is placed on the second connection surface F2 via its connection protrusion Z2, and is electrically contacted with the second connection surface F2 multiple times, such as Figure 3B The main part HT2 of the second busbar H+ extends substantially above the second connection surface F2 and parallel to the upper side of the circuit carrier ST, so that Figure 4 Illustrated in .
[0059] The third busbar H- is placed on the corresponding third connection surface F3 via its connection protrusion Z3 and is in electrical contact with the corresponding third connection surface F3, so that Figure 3B The main part HT3 of the third busbar H- also extends substantially above the second connection surface F2 and parallel to the upper side of the circuit carrier ST, so that Figure 3A Here, the second and third busbars H+, H- or their respective main parts HT2, HT3 overlap each other above the second connection surface F2. The second and third busbars H+, H- are electrically insulated or separated from each other, for example, by means of an electrically insulating layer arranged between the two busbars H+, H-.
[0060] Figure 4 A schematic cross-sectional view of a partial section of the aforementioned power module LM is shown in a side view, wherein the side sections of the aforementioned busbars P, H+, H− are clearly depicted.
[0061] The connecting projections Z1, Z2, Z3 of the respective busbars P, H+, H- are substantially S-shaped and extend from the respective main parts HT1, HT2, HT3 in the direction toward the respective corresponding connection surfaces F1, F2, F3 and are physically and electrically connected to the respective corresponding connection surfaces F1, F2, F3, for example by joining, soldering, welding, sintering or similar. Here, the connecting projections Z2, Z3 of the second and respective third busbars H+, H- respectively extend at least partially across a respective one of the aforementioned areas B on the upper side of the circuit carrier ST. Here, the connecting projections Z2 of the second busbar H+ are additionally bent at their respective sections AS facing the second connection surface F2, so that these sections AS are suspended above the second connection surface F2 at a distance from the second connection surface F2 and respectively form small low-inductance "loops" (low-inductance intermediate circuits). A space RM is formed by the “loop” on the respective region B of the top side of the circuit carrier ST between, on the one hand, the section AS of the respective connecting projection Z2 and, on the other hand, the second connecting surface F2 .
[0062] One of the aforementioned buffer circuits is respectively arranged in the corresponding space RM in a manner that saves installation space. Figure 4In the embodiment depicted in FIG. 1 , the snubber circuit has a bonding connection V1, an RC element RC with a capacitor and a resistor (as standard components). The snubber circuit or its RC element RC is electrically contacted with the corresponding third connection face F3 via the bonding connection V1. The RC element RC is placed on the second connection face F2 and is in electrical contact with the second connection face F2. Due to the low-inductance "loop" and the effectively placed snubber circuit, high switching speeds can be achieved. High-frequency oscillations in the current with voltage peaks that occur when operating a power module LM with fast-switching SiC transistor switches T1, T2 are directly attenuated by the corresponding snubber circuit (in the corresponding region B) connected in a low-inductance manner in the immediate vicinity.
[0063] Indirect damage due to these oscillations at the power module LM itself or at other circuit components of the inverter is therefore effectively prevented.
Claims
1. A power module (LM), comprising: a circuit carrier (ST) having a top side on which a first electrical connection surface (F1) for surface mounting a first transistor switch (T1) and a second electrical connection surface (F2) as well as a third electrical connection surface (F3) for surface mounting a second transistor switch (T2) are formed, wherein the first connection surface (F1) and the second connection surface (F2) are electrically insulated from one another and extend in each case along an extension direction (ER) of the circuit carrier (ST), and the third connection surface (F3) is electrically insulated from one another and from the first connection surface (F1) and the second connection surface (F2) and is arranged side by side in the extension direction (ER) and between the first connection surface (F1) and the second connection surface (F2); a buffer circuit, each of which is at least partially formed on a respective one of a plurality of regions (B) of the circuit carrier (ST), wherein each of the regions (B) partially spans over one of the third connection surface (F3) and the second connection surface (F2); - wherein the buffer circuit is electrically connected to the corresponding third connection surface (F3) and the second connection surface (F2) respectively.
2. A power module (LM) according to claim 1, wherein: The snubber circuits each have a capacitor (C) and / or a resistor (R), wherein the capacitor (C) and / or the resistor (R) of the respective snubber circuit is each arranged in a respective corresponding region (B).
3. A power module (LM) according to claim 1 or 2, wherein: The snubber circuits each have at least one first bonding connection (V1), wherein the first bonding connection (V1) of the respective snubber circuit each at least partially spans the respective corresponding region (B).
4. A power module (LM) according to any one of the preceding claims, wherein: The snubber circuits each have at least one conductor track connection (L), wherein the conductor track connection (L) is formed on the top side of the circuit carrier (ST).
5. A power module (LM) according to any one of the preceding claims, wherein: The first connection area ( F1 ) and / or the second connection area ( F2 ) and / or the third connection area ( F3 ) are embodied as conductor tracks.
6. A power module (LM) according to any one of the preceding claims, wherein: - the first connecting surface (F1) has a first connecting section (AB), which extends transversely to the extension direction (ER) and in the direction towards the second connecting surface (F2), wherein the first connecting section (AB) and the third connecting surface (F3) alternate in the extension direction (ER); and / or The second connecting surface (F2) has a second connecting section which extends transversely to the extension direction (ER) in the direction towards the first connecting surface (F1), wherein the second connecting section and the third connecting surface (F3) alternate in the extension direction (ER).
7. The power module (LM) according to any of the preceding claims, further comprising: - a first transistor switch (T1) which is surface mounted on the first connection surface (F1) and is electrically connected to a respective one of the third connection surfaces (F3) via a second bonding connection (V2); and / or - a second transistor switch (T2) which is surface mounted on the second connection surface (F2) and is electrically connected to the first connection surface (F1) via a third bonding connection (V3).
8. A power module (LM) according to claim 7, wherein: - The transistor switches (T1, T2) are silicon carbide transistor switches.
9. The power module (LM) according to any of the preceding claims, further comprising: - a first busbar (P) having a first connecting protrusion (Z1), the first busbar (P) being placed on the first connecting surface (F1) via the first connecting protrusion (Z1) and being electrically connected to the first connecting surface (F1); and / or a second busbar (H+) having a second connection protrusion (Z2), the second busbar (H+) being placed on the second connection surface (F2) via the second connection protrusion and being electrically connected to the second connection surface (F2); and / or A third busbar (H-) having a third connecting lug (Z3), the third busbar (H-) being placed on the respective third connecting surface (F3) via the third connecting lug and being electrically connected to the respective third connecting surface (F3).
10. The power module (LM) according to claim 9, wherein: In the case where the power module (LM) has a second busbar (H+) and a third busbar (H−), the second busbar (H+) and the third busbar (H−) are arranged to overlap each other to a large extent.
11. A power module (LM) according to claim 10, wherein: The second connecting projection (Z2) and / or the third connecting projection (Z3) each extend at least partially across a respective one of the regions (B).
12. A power module (LM) according to claim 11, wherein: -The second connecting protrusion (Z2) and / or the third connecting protrusion (Z3) are respectively shaped so that a space (R) is located between the corresponding second connecting protrusion (Z2) and / or the corresponding third connecting protrusion (Z3) on the one hand and the corresponding corresponding area (B) on the other hand, and one of the buffer circuits is respectively at least partially arranged in the space.
13. A power module (LM) according to any of the preceding claims, wherein the first connection surface (F1) and the second connection surface (F2) respectively extend along the extension direction (ER) from a first end region (E1) of the circuit carrier (ST) to a second end region (E2) of the circuit carrier (ST) facing away from the first end region (E1) in the extension direction (ER).
14. The power module (LM) according to claim 13, wherein the first connection surface (F1) and the second connection surface (F2) extend parallel to each other.
15. A power module (LM) according to any one of the preceding claims, wherein: the circuit carrier (ST) comprises two outer strip sections (A1, A2) facing away from one another and a central strip section (A3) between the two outer strip sections (A1, A2), wherein the strip sections (A1, A2, A3) extend along the extension direction (ER) from a first end region (E1) of the circuit carrier (ST) to a second end region (E2) of the circuit carrier (ST); - wherein the first and second connection surfaces (F1, F2) are respectively formed distributed on each of the two outer strip sections A1, A2, and the third connection surface (F3) is formed on the middle strip section (A3).
16. The power module (LM) according to claim 6 and 15, wherein the first connecting section (AB) or the second connecting section is formed on the middle strip section (A3).
17. The power module (LM) according to claim 1, wherein the first connection surface (F1), the second connection surface (F2) and the third connection surface (F3) and the region (B) of the circuit carrier (ST) are located on the same surface of the circuit carrier (ST).
18. An inverter comprising: - A power module (LM) according to any one of the preceding claims; - a driver circuit for operating said power module (LM); - a housing, wherein the power module (LM) and the driver circuit are arranged in the housing.