Semiconductor power device with hot melting assembly

Abstract

The invention relates to a semiconductor power device with a hot melting component, which is applied to the field of semiconductor power devices, and comprises a transparent cover, a hot melting component and a hot melting component, the sealing assembly and the transparent cover are integrally formed; the sealing assembly and the base assembly are fixed in a plastic package mode; a reflective assembly; a pin assembly; the light reflecting assembly comprises a substrate arranged in the transparent cover, and the top of the substrate is covered with an N-type semiconductor. By adopting the hot melting assembly, the driving assembly and the pin assembly, a safety protection structure is arranged in the whole power device, automatic circuit breaking can be realized under the condition that the internal temperature of the power device is continuously overheated, and the condition of short circuit spontaneous combustion caused by continuous high temperature of the high-power semiconductor power device is avoided; and the sealing assembly and the base assembly are adopted, so that the overall sealing performance and stability of the whole high-power semiconductor power device are ensured.

Description

Technical Field

[0001] The present invention relates to a semiconductor power device, in particular to a semiconductor power device with a hot melt component applied in the field of semiconductor power devices. Background Art

[0002] Packaged semiconductor power devices are shells used to install semiconductor power devices. They play the role of placing, fixing, sealing, protecting devices and enhancing electrical and thermal performance. They are also bridges that connect the internal world of the device with the external circuit. The contacts on the device are connected to the pins of the package shell with wires, and these pins are connected to other devices through wires on the printed circuit board. Therefore, packaging plays an important role in semiconductor power devices. There are many types of semiconductor power devices, and diodes are one of the most common semiconductor power devices.

[0003] Since a high-power diode generates a large amount of heat during use, it is not convenient to perform efficient heat dissipation treatment on the high-power diode.

[0004] The specification of Chinese patent CN218867087U discloses a high-power diode, which aims to solve the technical problem that it is not convenient to perform efficient heat dissipation treatment on the high-power diode under the existing technology; an epoxy resin sealing layer is fixedly installed on the upper end of the mounting plate, a cooling component is arranged on the inner side of the mounting plate, a threaded joint is fixedly installed on the upper end of the mounting plate, a heat dissipation component is arranged on the outer side of the threaded joint, the heat dissipation component is located above the mounting plate, a chip is arranged on the inner side of the epoxy resin sealing layer, a negative electrode pin is arranged at the bottom end of the chip, a metal wire is arranged at the bottom end of the chip, and a positive electrode pin is arranged at the bottom end of the metal wire.

[0005] Based on the above search and in combination with the prior art, it is found that the existing semiconductor power devices can only dissipate heat efficiently, but when the temperature inside the device is too high, the semiconductor power device will cause fire if it continues to work, which poses a high safety hazard. Therefore, a semiconductor power device with a hot melt component is proposed to improve the above problem. Summary of the invention

[0006] In view of the above-mentioned prior art, the technical problem to be solved by the present invention is that the existing semiconductor power devices can only perform high-efficiency heat dissipation, but when the internal temperature of the device is too high, the continuous operation of the semiconductor power devices will cause short circuits or even fires, posing a high safety hazard.

[0007] To solve the above problems, the present invention provides a semiconductor power device with a hot melt assembly, comprising:

[0008] A transparent cover, wherein a reflective plate is arranged inside the transparent cover;

[0009] A sealing component, wherein the sealing component is integrally formed with the transparent cover;

[0010] A base assembly, wherein the sealing assembly is fixed to the base assembly by plastic sealing;

[0011] Reflective components;

[0012] Pin assembly;

[0013] Drive components;

[0014] A hot melt component, the hot melt component comprises a copper plate arranged at the bottom of the reflector, a heat conducting sheet is fixedly connected to the bottom outer wall of the copper plate, a first heat conducting block is fixedly connected to the bottom of the heat conducting sheet, a second heat conducting block is arranged at the bottom of the first heat conducting block, the cross sections of the first heat conducting block and the second heat conducting block are both semicircular, the inner diameter of the first heat conducting block is larger than the diameter of the second heat conducting block, a fixing seat is arranged below the second heat conducting block, a heat absorbing groove is arranged at the top of the fixing seat, an arc groove is arranged at the bottom of the heat absorbing groove, the arc groove cooperates with the second heat conducting block, a mounting groove is arranged inside the fixing seat, a thermoplastic tube is arranged inside the mounting groove, the inside of the thermoplastic tube is filled with packaging wax, a second spring is arranged inside the thermoplastic tube, the top end of the second spring is fixedly connected to the top inner wall of the mounting groove, the second spring is fixed to the inside of the thermoplastic tube by the packaging wax, and the second spring is in a compressed state inside the thermoplastic tube;

[0015] The entire power device has a safety protection structure inside, which can automatically cut off the circuit when the temperature inside the power device continues to overheat, avoiding the situation where the high-power semiconductor power device continues to be overheated and causes short circuit and spontaneous combustion.

[0016] In the above, the reflective component includes a substrate arranged inside the transparent cover, the top of the substrate is covered with an N-type semiconductor, the top of the N-type semiconductor is covered with a P-type semiconductor, the tops of the N-type semiconductor and the P-type semiconductor are welded with wires, and the ends of the two groups of wires away from the N-type semiconductor and the P-type semiconductor are welded and fixed to the pin assembly, and a reflector is arranged outside the N-type semiconductor, the P-type semiconductor and the substrate, and the reflector is trumpet-shaped. The bottom of the reflector is filled with resin to form a transparent resin cover, and the transparent resin cover wraps the N-type semiconductor, the P-type semiconductor and the substrate.

[0017] As a further supplement to the present application, when the operating temperature of the power device is too high, the heat can be quickly transferred to the heat conductive sheet through the copper plate, and the multi-layer structure of the heat conductive sheet can transfer the heat to the first heat conductive block and the second heat conductive block. Since the cross-sections of the first heat conductive block and the second heat conductive block are both semicircular, and the inner diameter of the first heat conductive block is larger than the diameter of the second heat conductive block, the heat generated by the power device can be concentrated at the bottom of the second heat conductive block. At the same time, the second heat conductive block and the fixed seat are in close contact, and the heat absorbed by the second heat conductive block will be transferred to the packaging wax located inside the thermoplastic tube. The packaging wax will gradually melt when encountering continuous heat. When the packaging wax melts, it loses its fixing and limiting effect on the second spring.

[0018] As another improvement of the present application, the driving assembly includes a sliding column inserted into the fixed seat, one end of the second spring away from the top inner wall of the mounting groove is fixedly connected to the top outer wall of the sliding column, the bottom of the sliding column is fixedly connected to a rotating seat, one side of the rotating seat is rotatably connected to a push rod, and one end of the push rod away from the rotating seat is fixedly connected to the push column.

[0019] As another improvement supplement to the present application, during the process of the sliding column popping out from the inside of the fixing seat, the horizontal angle between the two sets of push rods connected to the bottom of the sliding column and the sliding column will become smaller, thereby driving the push column at one end of the push rod to push the metal sheet out of the contact groove.

[0020] As another improvement of the present application, the top outer wall of the sealing seat is fixedly connected with a fixing cover, the circumferential outer wall of the fixing cover is provided with a limiting groove, one end of the push rod passes through the inside of the limiting groove, the pin assembly includes an upper pin and a lower pin, the lower pin is fixedly connected to the sealing seat, the upper pin is fixedly connected to the transparent cover, a contact groove is provided on the top of the lower pin, the bottom end of the upper pin is rotatably connected with a rotating shaft, the upper pin is rotatably connected to a metal sheet via the rotating shaft, a first spring is fixedly connected to the outer wall of one side of the metal sheet, an end of the first spring away from the metal sheet is fixedly connected to the outer wall of one side of the upper pin, one side of the push column is in contact with the metal sheet, and the metal sheet is located inside the contact groove.

[0021] As another improvement supplement of the present application, the upper pin and the lower pin are disconnected to avoid short circuit and fire of the entire high-power semiconductor power device when working in a high-temperature environment for a long time, thereby improving safety.

[0022] As another improvement of the present application, the sealing assembly includes an extended ring plate arranged on the circumferential outer wall of the transparent cover, the top of the extended ring plate is provided with a packaging groove, the bottom of the packaging groove is provided with equidistant and circularly distributed clamping holes, the bottom of the extended ring plate is fixedly connected with a clamping ring plate, the base assembly includes a sealing seat arranged below the extended ring plate, the top of the sealing seat is provided with a clamping ring groove, the clamping ring plate is clamped with the clamping ring groove, the top of the sealing seat is fixedly connected with equidistant and circularly distributed clamping columns, one end of the clamping column passes through the inside of the clamping hole, and one side of the extended ring plate and the sealing seat are provided with a guide groove, and the guide groove is communicated with the clamping ring groove.

[0023] As another improvement supplement of the present application, the overall sealing and stability of the entire high-power semiconductor power device are ensured. During the cooperation between the extension ring plate and the sealing seat, one end of the clamping column can be passed through the clamping hole first. At the same time, the clamping ring plate located at the bottom of the extension ring plate will be clamped in the clamping ring groove, and then the packaging glue is injected through the packaging groove, thereby ensuring the sealing and stability between the sealing assembly and the base assembly. During the process of injecting the packaging glue, due to the setting of the guide groove, the packaging glue can be tightly fixed to the sealing seat, the clamping column, the clamping ring plate and the extension ring plate, thereby further improving the stability of the entire power device.

[0024] In summary, after adopting the above structure, the present invention has the following advantages compared with the prior art:

[0025] 1. By using the above-mentioned hot melt assembly, drive assembly and pin assembly, the entire power device has a safety protection structure, which can realize automatic circuit breaking when the temperature inside the power device continues to overheat, and avoid the situation where the high-power semiconductor power device continues to be high in temperature and causes short circuit and spontaneous combustion. When the power device is working normally, the packaging wax inside the thermoplastic tube can ensure the stability of the second spring, so that the second spring is always in a compressed state inside the thermoplastic tube. When the operating temperature of the power device is too high, the heat can be quickly transferred to the heat conductive sheet through the copper plate. The multi-layer structure of the heat conductive sheet can transfer the heat to the first heat conductive block and the second heat conductive block. Since the cross-sections of the first heat conductive block and the second heat conductive block are both semicircular, and the inner diameter of the first heat conductive block is larger than the diameter of the second heat conductive block, the heat generated by the power device can be concentrated at the bottom of the second heat conductive block.

[0026] At the same time, the second heat-conducting block and the fixing seat are in close contact, and the heat absorbed by the second heat-conducting block will be transferred to the packaging wax inside the thermoplastic tube. The packaging wax will gradually melt when encountering continuous heat. When the packaging wax melts, it loses its fixing and limiting effect on the second spring. At this time, the second spring will quickly recover its deformation to pop out the sliding column below it. In the process of the sliding column popping out from the fixing seat, the two sets of push rods connected to the bottom of the sliding column will rotate and the horizontal angle between them will become smaller, so that the push column at one end of the push rod can be driven to push the metal sheet out of the contact groove, thereby realizing the disconnection of the upper pin and the lower pin, avoiding short circuit and fire of the entire high-power semiconductor power device when working in a high-temperature environment for a long time, and having higher safety.

[0027] 2. The above-mentioned sealing assembly and base assembly are used to ensure the overall sealing and stability of the entire high-power semiconductor power device. During the cooperation between the extension ring plate and the sealing seat, one end of the clamping column can be passed through the clamping hole first. At the same time, the clamping ring plate located at the bottom of the extension ring plate will be clamped in the clamping ring groove, and then the packaging glue is injected through the packaging groove to ensure the sealing and stability between the sealing assembly and the base assembly. During the injection of the packaging glue, due to the setting of the guide groove, the packaging glue can be tightly fixed to the sealing seat, clamping column, clamping ring plate and extension ring plate, further improving the stability of the entire power device. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 This is a schematic diagram of the overall half-section structure of the first embodiment of the present application;

[0029] Figure 2 This is a schematic diagram of the three-dimensional structure of the first embodiment of the present application;

[0030] Figure 3 This is the first implementation method of this application Figure 1 A schematic diagram of the enlarged structure at A in the middle;

[0031] Figure 4 This is the first implementation method of this application Figure 1 A schematic diagram of the enlarged structure at B in the middle;

[0032] Figure 5 This is the second implementation method of this application Figure 1 Schematic diagram of the enlarged structure at C in the middle;

[0033] Figure 6 This is a schematic diagram of the internal structure of the transparent cover in the first embodiment of the present application;

[0034] Figure 7 This is the first implementation method of this application Figure 6 The enlarged structural diagram at D in the middle;

[0035] Figure 8This is a schematic diagram of the movement process of the metal sheet in the first embodiment of the present application;

[0036] Fig. 9 This is a schematic diagram of the movement of two groups of push rods in the first embodiment of the present application;

[0037] Fig.10 This is a schematic diagram of the hot melt assembly structure of the first embodiment of the present application;

[0038] Fig.11 This is the first implementation method of this application Fig.10 Schematic diagram of the enlarged structure at E in the middle.

[0039] Description of the numbers in the figure:

[0040] 1. Transparent cover; 2. Sealing assembly; 2001. Extension ring plate; 2002. Packaging groove; 2003. Snap ring plate; 2004. Guide groove; 3. Base assembly; 3001. Sealing seat; 3002. Snap column; 3003. Snap ring groove; 4. Pin assembly; 4001. Upper pin; 4002. Lower pin; 4003. Rotating shaft; 4004. First spring; 4005. Metal sheet; 4006. Contact groove; 5. Reflector; 6. Reflecting assembly; 6001. Wire; 6002. Substrate; 6003. N-type semiconductor body; 6004, P-type semiconductor; 6005, transparent resin cover; 6006, reflector; 7, driving assembly; 7001, sliding column; 7002, rotating seat; 7003, pushing rod; 7004, fixing cover; 7005, limiting groove; 7006, pushing column; 8, hot melt assembly; 8001, first heat conductive block; 8002, second heat conductive block; 8003, fixing seat; 8004, heat absorbing groove; 8005, thermoplastic tube; 8006, packaging wax; 8007, second spring; 8008, copper plate; 8009, heat conductive sheet. DETAILED DESCRIPTION

[0041] The following describes two implementation modes of the present application in detail with reference to the accompanying drawings.

[0042] The first implementation method:

[0043] The present invention provides a semiconductor power device having a hot melt component, see Figure 1-Figure 11 ,include:

[0044] A transparent cover 1, wherein a reflective plate 5 is arranged inside the transparent cover 1;

[0045] A sealing component 2, wherein the sealing component 2 is integrally formed with the transparent cover 1;

[0046] The base component 3, the sealing component 2 and the base component 3 are fixed by plastic sealing;

[0047] Reflective component 6;

[0048] Pin assembly 4;

[0049] The reflective component 6 includes a substrate 6002 disposed inside the transparent cover 1, the top of the substrate 6002 is covered with an N-type semiconductor 6003, the top of the N-type semiconductor 6003 is covered with a P-type semiconductor 6004, the tops of the N-type semiconductor 6003 and the P-type semiconductor 6004 are both welded with wires 6001, and one end of the two groups of wires 6001 away from the N-type semiconductor 6003 and the P-type semiconductor 6004 are both welded and fixed to the pin component 4, and a reflective cover 6006 is disposed outside the N-type semiconductor 6003, the P-type semiconductor 6004 and the substrate 6002, and the reflective cover 6006 is trumpet-shaped, and the bottom of the reflective cover 6006 is filled with resin to form a transparent resin cover 6005, and the transparent resin cover 6005 wraps the N-type semiconductor 6003, the P-type semiconductor 6004 and the substrate 6002;

[0050] Drive assembly 7;

[0051] Hot melt assembly 8, such as Figure 1 As shown, the entire power device has a safety protection structure inside, which can realize automatic circuit breaking when the temperature inside the power device continues to overheat, thereby avoiding the situation where the high-power semiconductor power device continues to be overheated and causes short circuit and spontaneous combustion.

[0052] In the present invention, the hot melt assembly 8 includes a copper plate 8008 arranged at the bottom of the reflector 6006, the bottom outer wall of the copper plate 8008 is fixedly connected with a heat conductive sheet 8009, the bottom of the heat conductive sheet 8009 is fixedly connected with a first heat conductive block 8001, the bottom of the first heat conductive block 8001 is arranged with a second heat conductive block 8002, the cross-sections of the first heat conductive block 8001 and the second heat conductive block 8002 are both semicircular, the inner diameter of the first heat conductive block 8001 is larger than the diameter of the second heat conductive block 8002, a fixing seat 8003 is arranged below the second heat conductive block 8002, and a heat absorbing groove is provided on the top of the fixing seat 8003 8004, a circular arc groove is provided at the bottom of the heat absorption groove 8004, and the circular arc groove cooperates with the second heat conducting block 8002. A mounting groove is provided inside the fixing seat 8003, and a thermoplastic tube 8005 is provided inside the mounting groove. The interior of the thermoplastic tube 8005 is filled with packaging wax 8006, and a second spring 8007 is provided inside the thermoplastic tube 8005. The top end of the second spring 8007 is fixedly connected to the top inner wall of the mounting groove. The second spring 8007 is fixed inside the thermoplastic tube 8005 through the packaging wax 8006. The second spring 8007 is in a compressed state inside the thermoplastic tube 8005. Figure 1 , 3-4, when the operating temperature of the power device is too high, the heat can be quickly transferred to the heat conductive sheet 8009 through the copper plate 8008, and the multi-layer structure of the heat conductive sheet 8009 can transfer the heat to the first heat conductive block 8001 and the second heat conductive block 8002. Since the cross-sections of the first heat conductive block 8001 and the second heat conductive block 8002 are both semicircular, and the inner diameter of the first heat conductive block 8001 is larger than the diameter of the second heat conductive block 8002, the heat generated by the power device can be concentrated on the bottom of the second heat conductive block 8002. At the same time, the second heat conductive block 8002 and the fixing seat 8003 are in close contact, and the heat absorbed by the second heat conductive block 8002 will be transferred to the packaging wax 8006 located inside the thermoplastic tube 8005. The packaging wax 8006 will gradually melt when encountering continuous heat. When the packaging wax 8006 melts, it loses the fixing and limiting effect on the second spring 8007.

[0053] In the present invention, the driving assembly 7 includes a slide column 7001 inserted into the fixed seat 8003, one end of the second spring 8007 away from the top inner wall of the installation groove is fixedly connected to the top outer wall of the slide column 7001, the bottom of the slide column 7001 is fixedly connected to the rotating seat 7002, one side of the rotating seat 7002 is rotatably connected to the push rod 7003, and the end of the push rod 7003 away from the rotating seat 7002 is fixedly connected to the push column 7006. Figure 6-7 As shown, during the process of the sliding column 7001 popping out from the interior of the fixing seat 8003, the horizontal angle between the two groups of push rods 7003 connected to the bottom of the sliding column 7001 and the sliding column 7001 will become smaller.

[0054] In the present invention, the top outer wall of the sealing seat 3001 is fixedly connected with a fixing cover 7004, the circumferential outer wall of the fixing cover 7004 is provided with a limiting groove 7005, one end of the push rod 7003 passes through the inside of the limiting groove 7005, the pin assembly 4 includes an upper pin 4001 and a lower pin 4002, the lower pin 4002 is fixedly connected to the sealing seat 3001, the upper pin 4001 is fixedly connected to the transparent cover 1, and the top of the lower pin 4002 is provided with a contact groove 4006. The bottom end of the upper pin 4001 is rotatably connected to a rotating shaft 4003, and the upper pin 4001 is rotatably connected to a metal sheet 4005 via the rotating shaft 4003. A first spring 4004 is fixedly connected to an outer wall of one side of the metal sheet 4005. One end of the first spring 4004 away from the metal sheet 4005 is fixedly connected to an outer wall of one side of the upper pin 4001. One side of the push column 7006 contacts the metal sheet 4005, and the metal sheet 4005 is located inside the contact groove 4006. Figure 7 As shown, the push column 7006 at one end of the push rod 7003 can be driven to push the metal sheet 4005 out from the inside of the contact groove 4006, thereby achieving the disconnection of the upper pin 4001 and the lower pin 4002, avoiding short circuit and fire of the entire high-power semiconductor power device when working in a high-temperature environment for a long time, and improving safety.

[0055] In summary: the working principle of the first embodiment: when the operating temperature of the power device is too high, the heat can be quickly transferred to the heat conductive sheet 8009 through the copper plate 8008, and the multi-layer structure of the heat conductive sheet 8009 can transfer the heat to the first heat conductive block 8001 and the second heat conductive block 8002. Since the cross-sections of the first heat conductive block 8001 and the second heat conductive block 8002 are both semicircular, and the inner diameter of the first heat conductive block 8001 is larger than the diameter of the second heat conductive block 8002, the heat generated by the power device can be concentrated at the bottom of the second heat conductive block 8002. At the same time, the second heat conductive block 8002 and the fixing seat 8003 are in close contact, and the heat absorbed by the second heat conductive block 8002 will be transferred to the packaging wax 8006 located inside the thermoplastic tube 8005. In the process of the sliding column 7001 popping out from the inside of the fixing seat 8003, the two sets of push rods 7003 connected to the bottom of the sliding column 7001 will rotate and the horizontal angle between them will become smaller, thereby driving the push column 7006 at one end of the push rod 7003 to push the metal sheet 4005 out of the contact groove 4006, thereby realizing the disconnection of the upper pin 4001 and the lower pin 4002, avoiding the short circuit and fire of the entire high-power semiconductor power device when working in a high-temperature environment for a long time, and having higher safety.

[0056] Second implementation method:

[0057] This embodiment adds the following structure on the basis of embodiment 1, and the specific configuration is as follows: Figure 5As shown, the sealing component 2 includes an extended ring plate 2001 arranged on the circumferential outer wall of the transparent cover 1, a packaging groove 2002 is provided on the top of the extended ring plate 2001, and clamping holes equidistantly distributed in a circle are provided on the bottom of the packaging groove 2002, and a clamping plate 2003 is fixedly connected to the bottom of the extended ring plate 2001, and the base component 3 includes a sealing seat 3001 arranged below the extended ring plate 2001, a clamping ring groove 3003 is provided on the top of the sealing seat 3001, and the clamping ring plate 2003 is clamped with the clamping ring groove 3003, and a clamping column 3002 equidistantly distributed in a circle is fixedly connected to the top of the sealing seat 3001, and one end of the clamping column 3002 passes through the inside of the clamping hole, and a guide groove 2004 is provided on one side of the extended ring plate 2001 and the sealing seat 3001. 2004 is connected with the retaining ring groove 3003, which ensures the overall sealing and stability of the entire high-power semiconductor power device. During the cooperation between the extended ring plate 2001 and the sealing seat 3001, one end of the clamping column 3002 can be passed through the clamping hole first. At the same time, the retaining ring plate 2003 located at the bottom of the extended ring plate 2001 will be clamped in the retaining ring groove 3003, and then the packaging glue is injected through the packaging groove 2002 to ensure the sealing and stability between the sealing component 2 and the base component 3. During the injection of the packaging glue, due to the setting of the guide groove 2004, the packaging glue can be tightly fixed to the sealing seat 3001, the clamping column 3002, the retaining ring plate 2003 and the extended ring plate 2001, further improving the stability of the entire power device.

[0058] In view of current practical needs, the above-mentioned implementation mode adopted in this application is not limited to the scope of protection. Various changes made within the knowledge scope of technical personnel in this field without departing from the concept of this application still fall within the scope of protection of the present invention.

Claims

1. A semiconductor power device having a hot melt component, characterized in that: include: A transparent cover (1), wherein a reflective plate (5) is arranged inside the transparent cover (1); A sealing component (2), wherein the sealing component (2) and the transparent cover (1) are integrally formed; A base assembly (3), wherein the sealing assembly (2) and the base assembly (3) are fixed by plastic sealing; Reflective component (6); Pin assembly (4); A drive assembly (7); The hot melt assembly (8) comprises a copper plate (8008) arranged at the bottom of the reflector (6006), a heat conducting sheet (8009) is fixedly connected to the outer wall of the bottom of the copper plate (8008), a first heat conducting block (8001) is fixedly connected to the bottom of the heat conducting sheet (8009), a second heat conducting block (8002) is arranged at the bottom of the first heat conducting block (8001), and the driving assembly (7) comprises a heat conducting block (8002) plugged into the fixing seat (8006) 003), one end of the second spring (8007) away from the top inner wall of the mounting groove is fixedly connected to the top outer wall of the sliding column (7001), the bottom of the sliding column (7001) is fixedly connected to a rotating seat (7002), one side of the rotating seat (7002) is rotatably connected to a push rod (7003), and one end of the push rod (7003) away from the rotating seat (7002) is fixedly connected to a push column (7006).

2. A semiconductor power device with a hot melt assembly according to claim 1, characterized in that: The sealing assembly (2) comprises an extended ring plate (2001) arranged on the circumferential outer wall of the transparent cover (1); a packaging groove (2002) is provided on the top of the extended ring plate (2001); clamping holes distributed in a circular shape and at equal distances are provided on the bottom of the packaging groove (2002); and a clamping ring plate (2003) is fixedly connected to the bottom of the extended ring plate (2001).

3. A semiconductor power device with a hot melt assembly according to claim 2, characterized in that: The base assembly (3) comprises a sealing seat (3001) arranged below the extension ring plate (2001); a snap ring groove (3003) is provided on the top of the sealing seat (3001); the snap ring plate (2003) is snap-connected with the snap ring groove (3003); the top of the sealing seat (3001) is fixedly connected with snap columns (3002) distributed in a circular shape and at equal distances; one end of the snap columns (3002) passes through the inside of the snap hole; a guide groove (2004) is provided on one side of the extension ring plate (2001) and the sealing seat (3001); the guide groove (2004) is communicated with the snap ring groove (3003).

4. A semiconductor power device with a hot melt assembly according to claim 3, characterized in that: The reflective component (6) comprises a substrate (6002) arranged inside the transparent cover (1); the top of the substrate (6002) is covered with an N-type semiconductor (6003); the top of the N-type semiconductor (6003) is covered with a P-type semiconductor (6004); the tops of the N-type semiconductor (6003) and the P-type semiconductor (6004) are both welded with wires (6001); two groups of the wires (6001) are separated from one side of the N-type semiconductor (6003) and the P-type semiconductor (6004); The ends are welded and fixed to the pin assembly (4); a reflector (6006) is arranged outside the N-type semiconductor (6003), the P-type semiconductor (6004) and the substrate (6002); the reflector (6006) is trumpet-shaped; the bottom of the reflector (6006) is filled with resin to form a transparent resin cover (6005); the transparent resin cover (6005) wraps the N-type semiconductor (6003), the P-type semiconductor (6004) and the substrate (6002).

5. A semiconductor power device with a hot melt assembly according to claim 4, characterized in that: The cross-sections of the first heat-conducting block (8001) and the second heat-conducting block (8002) are both semicircular, and the inner diameter of the first heat-conducting block (8001) is greater than the diameter of the second heat-conducting block (8002).

6. A semiconductor power device with a hot melt assembly according to claim 5, characterized in that: A fixing seat (8003) is arranged below the second heat-conducting block (8002), a heat-absorbing groove (8004) is arranged on the top of the fixing seat (8003), a circular arc groove is arranged on the bottom of the heat-absorbing groove (8004), and the circular arc groove cooperates with the second heat-conducting block (8002), a mounting groove is arranged inside the fixing seat (8003), a thermoplastic tube (8005) is arranged inside the mounting groove, the thermoplastic tube (8005) is filled with packaging wax (8006), a second spring (8007) is arranged inside the thermoplastic tube (8005), the top end of the second spring (8007) is fixedly connected to the top inner wall of the mounting groove, the second spring (8007) is fixed inside the thermoplastic tube (8005) through the packaging wax (8006), and the second spring (8007) is in a compressed state inside the thermoplastic tube (8005).

7. A semiconductor power device with a hot melt assembly according to claim 2, characterized in that: The top outer wall of the sealing seat (3001) is fixedly connected with a fixing cover (7004), and a limiting groove (7005) is provided on the circumferential outer wall of the fixing cover (7004), and one end of the push rod (7003) passes through the inside of the limiting groove (7005).

8. A semiconductor power device with a hot melt assembly according to claim 7, characterized in that: The pin assembly (4) comprises an upper pin (4001) and a lower pin (4002), wherein the lower pin (4002) is fixedly connected to the sealing seat (3001), and the upper pin (4001) is fixedly connected to the transparent cover (1).

9. A semiconductor power device with a hot melt assembly according to claim 8, characterized in that: A contact groove (4006) is provided at the top of the lower pin (4002); the bottom end of the upper pin (4001) is rotatably connected to a rotating shaft (4003); the upper pin (4001) is rotatably connected to a metal sheet (4005) via the rotating shaft (4003); a first spring (4004) is fixedly connected to an outer wall of one side of the metal sheet (4005); one end of the first spring (4004) away from the metal sheet (4005) is fixedly connected to an outer wall of one side of the upper pin (4001); one side of the push column (7006) is in contact with the metal sheet (4005); and the metal sheet (4005) is located inside the contact groove (4006).

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