Field effect transistor replacement method based on DX transmitter power amplification module

Abstract

The invention relates to a field effect transistor replacing method based on a DX transmitter power amplification module, which comprises the following steps of: S1, judging a fault of the power amplification module, and measuring resistance values between pins of a first field effect transistor group and a second field effect transistor group in a cut-off state and a conduction state through an ohm gear of a digital multimeter; s2, if it is judged that the first field-effect tube set and the second field-effect tube set are abnormal in the cut-off state and the on state, the first mold splitting component combination and the second mold splitting component combination are integrally dismantled and cleaned; s3, replacing the first field-effect tube group and the second field-effect tube group in the same batch, and installing a first split module assembly and a second split module assembly; and S4, releasing the mechanical matching stress between the first field-effect tube group and the second field-effect tube group during installation, and enabling the upper air ducts on the two sides to be communicated. According to the invention, the difficulty of correct positions of the field-effect tube, the insulation pad and the cooling fins is reduced, the replacement efficiency is improved, and the error rate is reduced.

Description

Technical Field

[0001] The invention relates to a method for replacing a field effect tube based on a DX transmitter power amplifier module. Background Art

[0002] The field effect tube heat dissipation part of the air-cooled power amplifier module is composed of a special-shaped heat sink assembly installed in a stacked manner to form an efficient heat dissipation combination. When replacing the field effect tube of a faulty module, maintenance personnel found that it was quite difficult to ensure the correct position of each field effect tube, insulation pad and heat sink.

[0003] The power amplifier module is an important component in the DX transmitter and the board with the largest number of uses. The pre-driver module, driver module, binary compensation module and large step module in the DX200 transmitter RF power amplifier path all use the same type of power amplifier module, totaling 239 pieces. Through the repair of the faulty modules, the causes of the failure are summarized as field effect tube damage, power fuse explosion, voltage regulator diode and diode performance deterioration, capacitor explosion and transistor breakdown, among which the field effect tube damage rate accounts for the highest proportion.

[0004] Therefore, a method for replacing a field effect tube based on a DX transmitter power amplifier module is provided. Summary of the invention

[0005] The purpose of the present invention is to overcome the existing defects and provide a method for replacing a field effect tube based on a DX transmitter power amplifier module, which reduces the difficulty of installing the field effect tube, the correct position between the insulating pad and the heat sink, improves the replacement efficiency and reduces the error rate.

[0006] The technical solution to achieve the above purpose is:

[0007] A method for replacing a field effect tube based on a DX transmitter power amplifier module, the power amplifier module comprising a first split-mode bulk combination and a second split-mode bulk combination, the first split-mode bulk combination comprising a first field effect tube group, a first V-shaped heat sink and a second V-shaped heat sink; the second split-mode bulk combination comprising a second field effect tube group, a first W-shaped heat sink and a second W-shaped heat sink; comprising:

[0008] Step S1, judging the fault of the power amplifier module, measuring the resistance between the pins of the first field effect tube group and the second field effect tube group in the cut-off state and the on-state by using the "ohm range" of a digital multimeter;

[0009] Step S2, if it is determined that the first field effect tube group and the second field effect tube group are abnormal in the cut-off state and the on state, the first split-mode bulk assembly and the second split-mode bulk assembly are completely dismantled and cleaned;

[0010] Step S3, replacing the first field effect transistor group and the second field effect transistor group of the same batch, and installing the first split-mode bulk assembly and the second split-mode bulk assembly;

[0011] Step S4, releasing the mechanical matching stress between the first field effect tube group and the second field effect tube group during installation and allowing the air ducts on both sides to penetrate;

[0012] Step S5, welding the first mold-partitioned assembly and the second mold-partitioned assembly;

[0013] Step S6, verifying the effectiveness of the repaired power amplifier module.

[0014] Preferably, in step S1, the first field effect tube group includes a first field effect tube, a second field effect tube, a third field effect tube and a fourth field effect tube, the first field effect tube and the second field effect tube are respectively padded with a first insulating pad and fixed on the first V-shaped heat sink, the third field effect tube and the fourth field effect tube are respectively padded with a first insulating pad and fixed on the second V-shaped heat sink; the second field effect tube group includes a fifth field effect tube, a sixth field effect tube, a seventh field effect tube and an eighth field effect tube, the fifth field effect tube and the sixth field effect tube are respectively padded with a second insulating pad and fixed on the first W-shaped heat sink, the seventh field effect tube and the eighth field effect tube are respectively padded with a second insulating pad and fixed on the second W-shaped heat sink;

[0015] Performing fault judgment on the first field effect transistor includes:

[0016] The pins of the first field effect tube are short-circuited at the same time to discharge the inside of the first field effect tube, which is now in the cut-off state;

[0017] Cut-off state verification: if the black test lead is connected to the D pole and the red test lead is connected to the S pole, the multimeter displays about 300kΩ; if the black test lead is connected to the S pole and the red test lead is connected to the D pole, the multimeter displays a megohm resistance or infinity, indicating that the first field effect tube is in the cut-off state and the built-in diode is normal, otherwise it is abnormal;

[0018] Connect the black test lead to the D pole, and touch the red test lead to the G pole. At this time, the first field effect tube is in the on state;

[0019] Conductive state verification, black test lead connected to D pole, red test lead connected to S pole, the multimeter shows about 0.3Ω, indicating that the first field effect tube is in the conductive state and the built-in diode is normal, otherwise it is abnormal;

[0020] The method of performing fault judgment on the first field effect tube is used to respectively perform fault judgment on the second field effect tube, the third field effect tube, the fourth field effect tube, the fifth field effect tube, the sixth field effect tube, the seventh field effect tube and the eighth field effect tube.

[0021] Preferably, when each field effect tube is in a cut-off state or a conducting state, the resistance between the G pole and the D pole or the S pole is infinite.

[0022] Preferably, step S2 comprises:

[0023] Step S21, remove the two M2.5X12 screws, the M2.5X6 screw, the first M2.5X16 screw, the second M2.5X16 screw, and the first insulating pad and the second insulating pad from the first split mold assembly and the second split mold assembly, and place them in a material box for safekeeping;

[0024] Step S22, removing the first V-shaped heat sink, the second V-shaped heat sink, the first W-shaped heat sink, and the second W-shaped heat sink, respectively, from the back side of the field effect tube, and removing them one by one;

[0025] Step S23, using diagonal pliers to cut off the G poles and S poles of the pins on both sides of the eight field effect tubes respectively;

[0026] Step S24, using an electric soldering iron with a suitable temperature to remove the eight field effect tubes and the remaining pin D poles from the circuit board, and using a solder sucker to clean the residual tin in the corresponding solder pads of the eight field effect tubes on the circuit board;

[0027] Step S25, residual tin cleaning effect inspection: a new field effect tube is used to test insert into the eight field effect tube welding positions on the circuit board respectively, and the pin of the new field effect tube can be smoothly inserted into the pad and there is a gap between the pin and the pad;

[0028] Step S26, checking and confirming that the pads and related circuit copper on the circuit board are not lifted or peeled off;

[0029] Step S27, cleaning the surfaces of the circuit board, the first V-shaped heat sink, the second V-shaped heat sink, the first W-shaped heat sink and the second W-shaped heat sink to create a good operating environment for the repair work.

[0030] Preferably, step S3 comprises:

[0031] Install the first split mold assembly:

[0032] Step S31, respectively screwing the two first M2.5X16 screws into the nut from the back side of the second V-shaped heat sink, with the end surface of the first M2.5X16 screw extending 5 mm beyond the front side of the second V-shaped heat sink;

[0033] Step S32, temporary suspension, protruding two of the first M2.5X16 screws from the front of the second V-shaped heat sink at the installation position, respectively, stringing the first insulating pad and the third field effect transistor on one of the first M2.5X16 screws, respectively, stringing the first insulating pad and the fourth field effect transistor on one of the first M2.5X16 screws, respectively, adjusting the screwing depth of the first M2.5X16 screw, so that the end surfaces of the two first M2.5X16 screws do not exceed the front of the third field effect transistor and the fourth field effect transistor respectively;

[0034] Step S33, facing the sharp corner of the second V-shaped heat sink, the back of the first V-shaped heat sink is respectively attached to the front of the third field effect tube and the fourth field effect tube, and the two side wings are wrapped around the side wings of the second V-shaped heat sink, and moved parallelly from top to bottom until the front and rear mounting holes of the first V-shaped heat sink and the second V-shaped heat sink are coaxial;

[0035] Step S34, clamping the first V-shaped heat sink and the second V-shaped heat sink from the top with two 25 mm dovetail clamps, so that the first insulating pad, the third field effect transistor and the fourth field effect transistor temporarily suspended on the second V-shaped heat sink are firmly clamped between the first V-shaped heat sink and the second V-shaped heat sink;

[0036] Step S35, making the fourth field effect tube mounting surface of the second V-shaped heat sink horizontal, and unscrewing the first M2.5X16 screw corresponding to the horizontal surface;

[0037] Step S36, use the first M2.5X16 screw to string the second field effect tube and the first insulating pad from top to bottom, then penetrate into the field effect tube mounting hole on the first V-shaped heat sink, and then pass through the fourth field effect tube and the first insulating pad sandwiched between the first V-shaped heat sink and the second V-shaped heat sink, and finally screw into the embedded nut on the second V-shaped heat sink, so as to install the first field effect tube and the first insulating pad on the other side. At this point, the installation of the first split-mode assembly is completed.

[0038] Preferably, the step S3 further comprises:

[0039] Install the second parting assembly:

[0040] Step S37, respectively screw the two second M2.5X16 screws into the embedded nuts from the back side of the first W-shaped heat sink, with the end surface of the second M2.5X16 screw extending 5 mm beyond the front side of the first W-shaped heat sink;

[0041] Step S38, two second M2.5X16 screws are protruded from the front of the first W-shaped heat sink at the installation position, the second insulating pad and the fifth field effect transistor are respectively strung on one of the second M2.5X16 screws, and the second insulating pad and the sixth field effect transistor are respectively strung on another of the second M2.5X16 screws, and the two second M2.5X16 screws are temporarily suspended and fine-tuned so that their end surfaces do not exceed the front of the fifth field effect transistor and the sixth field effect transistor respectively;

[0042] Step S39, covering the second W-shaped heat sink and making the field effect tube mounting hole on the second W-shaped heat sink coaxial with the first W-shaped heat sink;

[0043] Step S310, clamping the first W-shaped heat sink and the second W-shaped heat sink from the top with two 25 mm dovetail clamps, so that the fifth field effect transistor, the sixth field effect transistor and the second insulating pad suspended on the first W-shaped heat sink are firmly clamped between the first W-shaped heat sink and the second W-shaped heat sink;

[0044] Step S311, making the fifth field effect tube mounting surface of the first W-shaped heat sink horizontal, and unscrewing the second M2.5X16 screw temporarily suspending the fifth field effect tube;

[0045] Step S312, use the second M2.5X16 screw to string the seventh field effect transistor and the second insulating pad from top to bottom, then penetrate into the field effect transistor mounting hole on the second W-shaped heat sink, and then pass through the fifth field effect transistor and the second insulating pad sandwiched between the first W-shaped heat sink and the second W-shaped heat sink, and then screw into the embedded nut on the first W-shaped heat sink, so as to install the eighth field effect transistor and the second insulating pad on the other side. At this point, the installation of the second split-mode assembly is completed.

[0046] Preferably, the step S3 further comprises:

[0047] The first mold-parting assembly and the second mold-parting assembly are integrally installed:

[0048] Step S313, the second split-mode assembly is arranged with the pins of the fifth field effect transistor, the sixth field effect transistor, the seventh field effect transistor and the eighth field effect transistor facing upward, and a magnetic ring is connected in series to the middle pins of the fifth field effect transistor, the sixth field effect transistor, the seventh field effect transistor and the eighth field effect transistor respectively;

[0049] Step S314, keeping the second split-mode bulk assembly in the state in step S312, with the top layer of the circuit board facing downward, aligning the pads on the circuit board corresponding to the fifth field effect transistor, the sixth field effect transistor, the seventh field effect transistor and the eighth field effect transistor with the pins of the fifth field effect transistor, the sixth field effect transistor, the seventh field effect transistor and the eighth field effect transistor, and then vertically inserting them, and then respectively passing the two M2.5X6 screws through the fixing ears on the second W-shaped heat sink, and screwing them into the embedded nuts on the circuit board, that is, fixing the second split-mode bulk assembly on the circuit board;

[0050] Step S315, flip the circuit board with the top layer facing upward, align the pins of the first field effect transistor, the second field effect transistor, the third field effect transistor and the fourth field effect transistor on the first split-module assembly with the corresponding pads of the first field effect transistor, the second field effect transistor, the third field effect transistor and the fourth field effect transistor on the circuit board, and then install the M2.5X12 screws on both sides respectively to form a module to be welded.

[0051] Preferably, step S4 comprises:

[0052] Step S41, place the top layer of the circuit board upwards, slightly loosen the first M2.5X16 screw and the second M2.5X16 screw to release the mechanical matching stress between the eight field effect transistors during installation;

[0053] Step S42, slightly loosen the M2.5X12 screws on both sides, and fine-tune the first V-shaped heat sink, the second V-shaped heat sink, the first W-shaped heat sink, and the second W-shaped heat sink to make the air ducts on both sides connected.

[0054] Preferably, step S5 comprises:

[0055] Step S51, placing the module to be welded, padding one side of the circuit board of the module to be welded on an unmounted second W-shaped heat sink, and placing both horizontally on a desktop;

[0056] Step S52, using an anti-static soldering iron with the temperature set to about 385°C, soldering the pins of the eight field effect transistors in turn.

[0057] Preferably, step S6 comprises:

[0058] Step S61, resistance measurement: measuring the resistance of the eight field effect tube paths of the repaired power amplifier module, using the ohmmeter of a multimeter to measure the resistance between the power supply VCC and GND, and the value displayed by the multimeter changes gradually;

[0059] Step S62, power-on test: installing the repaired power amplifier module to the "power amplifier module test platform" for power-on test to check whether its working output waveform is normal;

[0060] Step S63, temperature measurement: thermal imaging or temperature measurement is performed on the power amplifier module that has completed the power-on test, and then image and data comparison is performed.

[0061] The beneficial effects of the present invention are as follows: the present invention reduces the difficulty of installing the field effect tube, the correct position between the insulating pad and the heat sink, and improves the replacement efficiency by judging whether the field effect tube in the power amplifier module is faulty, then dismantling, cleaning, installing, and welding it, and finally verifying the effectiveness of the power amplifier module after repair. BRIEF DESCRIPTION OF THE DRAWINGS

[0062] Figure 1 It is a flow chart of a method for replacing a field effect tube based on a DX transmitter power amplifier module of the present invention;

[0063] Figure 2 It is a flow chart of dismantling and cleaning the first sub-mold assembly and the second sub-mold assembly as a whole in the present invention;

[0064] Figure 3 It is a flow chart of installing the first split-mode assembly in the present invention;

[0065] Figure 4 is a flow chart of installing the second split-mode assembly in the present invention;

[0066] Figure 5 It is a flow chart of the overall installation of the first sub-mold assembly and the second sub-mold assembly in the present invention;

[0067] Figure 6 It is a flow chart of releasing the mechanical matching stress between the first field effect tube group and the second field effect tube group and allowing the air ducts on both sides to penetrate in the present invention;

[0068] Figure 7 It is a flow chart of welding the first mold-split combination and the second mold-split combination in the present invention;

[0069] Figure 8 It is a flow chart of installing the first split-mode assembly in the present invention;

[0070] Fig. 9 is a schematic diagram of a power amplifier module in the present invention;

[0071] Fig.10 It is a simplified diagram of the field effect tube configuration of the power amplifier module circuit in the present invention;

[0072] Fig.11 is a schematic diagram of a field effect transistor I RFP360 in the present invention;

[0073] Fig.12 This is a circuit diagram of the field effect transistor I RFP360 in the present invention;

[0074] Fig.13 It is a schematic diagram of installing the first M2.5X16 screw in the present invention;

[0075] Fig.14 is a schematic diagram of installing the third field effect tube and the fourth field effect tube in the present invention;

[0076] Fig.15 is a schematic diagram of installing a first V-shaped heat sink in the present invention;

[0077] Fig.16 is a schematic diagram of a dovetail clamp clamping a first V-shaped heat sink and a second V-shaped heat sink in the present invention;

[0078] Fig.17 It is a schematic diagram of unscrewing the first M2.5X16 screw in the present invention;

[0079] Fig.18 is a schematic diagram of installing the second field effect tube and the first insulating pad in the present invention;

[0080] Fig.19 It is a schematic diagram of unscrewing the first M2.5X16 screw on the other side of the first V-shaped heat sink in the present invention;

[0081] Fig. 20 is a schematic diagram of installing a first field effect tube and a first insulating pad in the present invention;

[0082] Fig.21 It is a schematic diagram of the first split-mode assembly in the present invention after installation is completed;

[0083] Fig. 22 It is a schematic diagram of installing the second M2.5X16 screw in the present invention;

[0084] Fig.23 is a schematic diagram of installing the fifth field effect transistor and the sixth field effect transistor in the present invention;

[0085] Fig.24 is a schematic diagram of installing a second W-shaped heat sink in the present invention;

[0086] Fig.25 is a schematic diagram of a dovetail clamp clamping a first W-shaped heat sink and a second W-shaped heat sink in the present invention;

[0087] Fig.26 It is a schematic diagram of unscrewing the second M2.5X16 screw in the present invention;

[0088] Fig. 27 is a schematic diagram of the seventh field effect transistor and the second insulating pad in the present invention;

[0089] Fig.28 is a schematic diagram of unscrewing the second M2.5X16 screw on the other side of the first W-shaped heat sink in the present invention;

[0090] Fig.29 is a schematic diagram of the eighth field effect transistor and the second insulating pad in the present invention;

[0091] Fig.30 It is a schematic diagram of the second split-mode assembly in the present invention after installation is completed;

[0092] Fig.31 It is a schematic diagram of installing the magnetic ring in the present invention;

[0093] Fig.32 is a schematic diagram of installing a circuit board in the present invention;

[0094] Fig.33 It is a schematic diagram of installing M2.5X12 screws in the present invention;

[0095] Fig.34 It is a schematic diagram of the air ducts on both sides of the second W-shaped heat sink in the present invention;

[0096] Fig.35 This is a schematic diagram of the arrangement of modules to be welded in the present invention;

[0097] Fig.36 It is a schematic diagram of the field effect tube portion of the bottom layer of the circuit board in the present invention;

[0098] Fig.37 This is a schematic diagram of a fault-free thermal imaging of a power amplifier module in the present invention;

[0099] Fig.38 It is a thermal imaging schematic diagram of a faulty power amplifier module after repair in the present invention.

[0100] In the figure: 1. first V-shaped heat sink; 2. second V-shaped heat sink; 3. first insulating pad; 4. first W-shaped heat sink; 5. second W-shaped heat sink; 6. second insulating pad; 7. circuit board; 8. M2.5X12 screw; 9. M2.5X6 screw; 101. first M2.5X16 screw; 102. second M2.5X16 screw; 11. first field effect transistor; 12. second field effect transistor; 13. third field effect transistor; 14. fourth field effect transistor; 15. fifth field effect transistor; 16. sixth field effect transistor; 17. seventh field effect transistor; 18. eighth field effect transistor; 19. dovetail clamp; 20. magnetic ring. DETAILED DESCRIPTION

[0101] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. In the description of the present invention, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside" and the like indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0102] The present invention will be further described below in conjunction with the accompanying drawings.

[0103] like Fig. 9 As shown, the power amplifier module includes a first split-mode scattered combination and a second split-mode scattered combination, the first split-mode scattered combination includes a first field effect tube group, a first V-shaped heat sink 1 and a second V-shaped heat sink 2, the first field effect tube group includes a first field effect tube 11, a second field effect tube 12, a third field effect tube 13 and a fourth field effect tube 14, the first field effect tube 11 and the second field effect tube 12 are respectively padded with a first insulating pad 3 and fixed on the first V-shaped heat sink 1, and the third field effect tube 13 and the fourth field effect tube 14 are respectively padded with a first insulating pad 3 is fixed on the second V-shaped heat sink 2; the second split-mode heat sink group includes a second field effect tube group, a first W-shaped heat sink 4 and a second W-shaped heat sink 5, the second field effect tube group includes a fifth field effect tube 15, a sixth field effect tube 16, a seventh field effect tube 17 and an eighth field effect tube 18, the fifth field effect tube 15 and the sixth field effect tube 16 are respectively padded with a second insulating pad 6 and fixed on the first W-shaped heat sink 4, and the seventh field effect tube 17 and the eighth field effect tube 18 are respectively padded with a second insulating pad 6 and fixed on the second W-shaped heat sink 5.

[0104] like Figure 1 As shown, a method for replacing a field effect tube based on a DX transmitter power amplifier module includes:

[0105] Step S1, judging the fault of the power amplifier module, using the "ohm range" of a digital multimeter to measure the resistance between the pins of the first field effect tube group and the second field effect tube group in the cut-off state and the on-state.

[0106] The power amplifier module adopts a typical H-bridge circuit, such as Fig.10As shown, each group consists of two field effect transistors in parallel, which increases the overall redundancy to meet the high voltage and high current working environment and improves the working stability and service life of the module; the first field effect transistor 11, the second field effect transistor 12, the third field effect transistor 13, the fourth field effect transistor 14, the fifth field effect transistor 15, the sixth field effect transistor 16, the seventh field effect transistor 17 and the eighth field effect transistor 18 all adopt metal oxide semiconductor field effect transistor IRFP360.

[0107] Check and measure the power amplifier module that has been shut down due to a power fuse failure. Use the ohmmeter of a multimeter to measure the resistance of the path between VCC and GND of the two arms of the H-bridge circuit. It can be determined whether the first field effect tube group and the second field effect tube group have breakdown: if one of the field effect tubes is normal, the multimeter display value will change from large to small and then stabilize at around 478KΩ. If the display value directly shows 478KΩ, check whether the capacitance on the path is normal; when a field effect tube breaks down, the multimeter displays a resistance of 0.3Ω. At this time, because the component is soldered in the circuit On the board circuit, it is impossible to specifically locate which field effect tube is broken down and causes the path short circuit. The first sub-mode scattered combination and the second sub-mode scattered combination can be removed separately to divide the fault area, but sometimes the part removed first is normal, and the broken-down field effect tube is in another combination; sometimes the broken-down field effect tube is in the part removed first. Considering the overall performance and stability of the power amplifier module, the 8 field effect tubes have been working for the same length of time and the number of switching times is the same. When the field effect tube breakdown is found in the path resistance measurement, the 8 field effect tubes are replaced at the same time.

[0108] In the process of replacing the field effect tube of the power amplifier module, the focus is on the protection of the corresponding pad of the field effect tube on the circuit board 7 and the integrity of the copper plating of the circuit; considering the consistency of the electrical performance of the field effect tube, new field effect tubes from the same batch are selected for installation.

[0109] like Fig.11 , 12 As shown, the fault judgment of the first field effect transistor 11 includes:

[0110] Short-circuit the pins of the first field effect tube 11 at the same time to discharge the inside, and it is in the cut-off state at this time; verify the cut-off state, if the black test pen is connected to the D pole and the red test pen is connected to the S pole, the multimeter displays about 300kΩ; the black test pen is connected to the S pole and the red test pen is connected to the D pole, the multimeter displays a megohm resistance or infinity, indicating that the first field effect tube 11 is in the cut-off state and the built-in diode is normal, otherwise it is abnormal; the black test pen is connected to the D pole, and the red test pen touches the G pole, and the first field effect tube 11 is in the on state; verify the on state, the black test pen is connected to the D pole and the red test pen is connected to the S pole, and the multimeter displays about 0.3Ω, indicating that the first field effect tube 11 is in the on state and the built-in diode is normal, otherwise it is abnormal;

[0111] The fault judgment of the second field effect transistor 12, the third field effect transistor 13, the fourth field effect transistor 14, the fifth field effect transistor 15, the sixth field effect transistor 16, the seventh field effect transistor 17 and the eighth field effect transistor 18 are performed respectively by the method of performing fault judgment on the first field effect transistor 11; wherein, no matter whether the state of the first field effect transistor 11, the second field effect transistor 12, the third field effect transistor 13, the fourth field effect transistor 14, the fifth field effect transistor 15, the sixth field effect transistor 16, the seventh field effect transistor 17 and the eighth field effect transistor 18 is the cut-off state or the on state, the resistance between the G pole and the D pole or the S pole is infinite.

[0112] Step S2, if it is determined that the first field effect tube group and the second field effect tube group are abnormal in the cut-off state and the conduction state, the first sub-module assembly and the second sub-module assembly are completely dismantled and cleaned; Figure 2 As shown, specifically including:

[0113] Step S21, remove the two M2.5X12 screws 8, the M2.5X6 screw 9, the first M2.5X16 screw 101, the second M2.5X16 screw 102, the first insulating pad 3 and the second insulating pad 6 on the first split mold assembly and the second split mold assembly, and place them in a material box for safekeeping.

[0114] Step S22, removing the first V-shaped heat sink 1, the second V-shaped heat sink 2, the first W-shaped heat sink 4 and the second W-shaped heat sink 5, peeling them off from the back side of the field effect tube respectively, and removing them one by one.

[0115] Step S23, using diagonal pliers to cut off the G poles and S poles of the pins on both sides of the first field effect transistor 11, the second field effect transistor 12, the third field effect transistor 13, the fourth field effect transistor 14, the fifth field effect transistor 15, the sixth field effect transistor 16, the seventh field effect transistor 17 and the eighth field effect transistor 18 respectively.

[0116] Step S24, use an electric soldering iron with appropriate temperature to desolder the first field effect transistor 11, the second field effect transistor 12, the third field effect transistor 13, the fourth field effect transistor 14, the fifth field effect transistor 15, the sixth field effect transistor 16, the seventh field effect transistor 17 and the eighth field effect transistor 18 as well as the remaining pin D pole from the circuit board 7, and use a solder sucker to clean the residual tin in the corresponding pads of the eight field effect transistors on the circuit board 7.

[0117] Step S25, residual tin cleaning effect inspection: a new field effect tube is used to test insert into the eight field effect tube welding positions on the circuit board 7, and the pin of the new field effect tube can be smoothly inserted into the pad and there is a gap between the pin and the pad.

[0118] Step S26, check and confirm that the copper coating of the pads and related circuits on the circuit board 7 is not lifted or peeled off.

[0119] Step S27, cleaning the surfaces of the circuit board 7, the first V-shaped heat sink 1, the second V-shaped heat sink 2, the first W-shaped heat sink 4 and the second W-shaped heat sink 5 to create a good operating environment for the repair work.

[0120] Step S3, replacing the first field effect tube group and the second field effect tube group of the same batch, and installing the first split-mode bulk assembly and the second split-mode bulk assembly.

[0121] Install the first mold assembly, such as Figure 3 As shown, specifically including:

[0122] Step S31, respectively screw two first M2.5X16 screws 101 into the nut from the back of the second V-shaped heat sink 2, and the depth is such that the end surface of the first M2.5X16 screw 101 exceeds the front surface of the second V-shaped heat sink 2 by 5 mm. Fig.13 shown.

[0123] Step S32, temporary suspension, two first M2.5X16 screws 101 protrude from the front of the second V-shaped heat sink 2 at the installation position, the first insulating pad 3 and the third field effect tube 13 are respectively strung on one first M2.5X16 screw 101, and the first insulating pad 3 and the fourth field effect tube 14 are respectively strung on one first M2.5X16 screw 101, and the screwing depth of the first M2.5X16 screw 101 is adjusted, and the end surfaces of the two first M2.5X16 screws 101 do not exceed the front of the third field effect tube 13 and the fourth field effect tube 14, respectively. Fig.14 shown.

[0124] Step S33, facing the sharp corner of the second V-shaped heat sink 2, with the overall angle slightly tilted backward, the back of the first V-shaped heat sink 1 is respectively attached to the front of the third field effect tube 13 and the fourth field effect tube 14, and the two side wings are wrapped around the side wings of the second V-shaped heat sink 2, and moved parallelly from top to bottom until the front and rear mounting holes of the first V-shaped heat sink 1 and the second V-shaped heat sink 2 are coaxial, such as Fig.15 shown.

[0125] Step S34, use two 25 mm dovetail clamps 19 to clamp the first V-shaped heat sink 1 and the second V-shaped heat sink 2 from the top, so that the first insulating pad 3, the third field effect transistor 13 and the fourth field effect transistor 14 temporarily suspended on the second V-shaped heat sink 2 are firmly clamped between the first V-shaped heat sink 1 and the second V-shaped heat sink 2, as shown in FIG. Fig.16 shown.

[0126] Step S35, make the mounting surface of the fourth field effect tube 14 of the second V-shaped heat sink 2 horizontal, and unscrew the first M2.5X16 screw 101 corresponding to the horizontal surface. Fig.17 shown.

[0127] Step S36, use the first M2.5X16 screw 101 to string the second field effect tube 12 and the first insulating pad 3 from top to bottom, then penetrate the field effect tube installation hole on the first V-shaped heat sink 1, and then penetrate the fourth field effect tube 14 and the first insulating pad 3 sandwiched between the first V-shaped heat sink 1 and the second V-shaped heat sink 2, and finally screw into the embedded nut on the second V-shaped heat sink 2, as shown in FIG. Fig.18 Then install the first field effect transistor 11 and the first insulating pad 3 on the other side, as shown Fig.19 , 20 As shown, at this point, the first split mold assembly is installed, as shown in FIG. Fig.21 shown.

[0128] Install the second split mold assembly, such as Figure 4 shown.

[0129] Step S37, screw two second M2.5X16 screws 102 into the embedded nuts from the back of the first W-shaped heat sink 4, and the depth is that the end surface of the second M2.5X16 screw 102 exceeds the front surface of the first W-shaped heat sink 4 by 5 mm. Fig. 22 shown.

[0130] Step S38, two second M2.5X16 screws 102 are protruded from the front of the first W-shaped heat sink 4 at the installation position, and the second insulating pad 6 and the fifth field effect transistor 15 are respectively strung on one second M2.5X16 screw 102, and the second insulating pad 6 and the sixth field effect transistor 16 are respectively strung on one second M2.5X16 screw 102, and the two second M2.5X16 screws 102 are temporarily suspended and fine-tuned so that their end surfaces do not exceed the front of the fifth field effect transistor 15 and the sixth field effect transistor 16, respectively, as shown in FIG. Fig.23 shown.

[0131] Step S39, cover the second W-shaped heat sink 5 and make the field effect tube mounting hole on the second W-shaped heat sink 5 coaxial with the first W-shaped heat sink 4, such as Fig.24 shown.

[0132] Step S310, use two 25 mm dovetail clips 19 to clamp the first W-shaped heat sink 4 and the second W-shaped heat sink 5 from the top, so that the fifth field effect transistor 15, the sixth field effect transistor 16 and the second insulating pad 6 suspended on the first W-shaped heat sink 4 are firmly clamped between the first W-shaped heat sink 4 and the second W-shaped heat sink 5, as shown in FIG. Fig.25 shown.

[0133] Step S311, make the mounting surface of the fifth field effect tube 15 of the first W-shaped heat sink 4 horizontal, unscrew the second M2.5X16 screw 102 for temporarily hanging the fifth field effect tube 15, as shown in FIG. Fig.26 shown.

[0134] Step S312, use the second M2.5X16 screw 102 to string the seventh field effect transistor 17 and the second insulating pad 6 from top to bottom, then penetrate the field effect transistor installation hole on the second W-shaped heat sink 5, and then penetrate the fifth field effect transistor 15 and the second insulating pad 6 sandwiched between the first W-shaped heat sink 4 and the second W-shaped heat sink 5, and finally screw into the embedded nut on the first W-shaped heat sink 4, such as Fig. 27 As shown; and then install the eighth field effect transistor 18 and the second insulating pad 6 on the other side, as Fig.28 , 29 As shown; At this point, the second split mold assembly is installed, as shown Fig.30 shown.

[0135] The first sub-mold assembly and the second sub-mold assembly are installed as a whole. Figure 5 Shown

[0136] Step S313, the pins of the fifth field effect transistor 15, the sixth field effect transistor 16, the seventh field effect transistor 17 and the eighth field effect transistor 18 of the second split-mode assembly are facing upward, and a magnetic ring 20 is connected in series to the middle pins of the fifth field effect transistor 15, the sixth field effect transistor 16, the seventh field effect transistor 17 and the eighth field effect transistor 18, respectively. Fig.31 shown.

[0137] Step S314, keeping the second split-mode bulk assembly in the shape in step S312, the top layer of the circuit board 7 is facing downward, the pads corresponding to the fifth field effect transistor 15, the sixth field effect transistor 16, the seventh field effect transistor 17 and the eighth field effect transistor 18 on the circuit board 7 are aligned with the pins of the fifth field effect transistor 15, the sixth field effect transistor 16, the seventh field effect transistor 17 and the eighth field effect transistor 18, and then vertically inserted, and then two M2.5X6 screws 9 are respectively passed through the fixing ears on the second W-shaped heat sink 5, and screwed into the embedded nuts on the circuit board 7, that is, the second split-mode bulk assembly is fixed on the circuit board 7; Fig.32 shown.

[0138] Step S315, flip the circuit board 7 so that the top layer faces upward, align the pins of the first field effect transistor 11, the second field effect transistor 12, the third field effect transistor 13 and the fourth field effect transistor 14 on the first split-module assembly with the corresponding pads of the first field effect transistor 11, the second field effect transistor 12, the third field effect transistor 13 and the fourth field effect transistor 14 on the circuit board 7, and vertically insert them, and then install the M2.5X12 screws 8 on both sides respectively to form a module to be welded, such as Fig.33 shown.

[0139] Step S4, releasing the mechanical matching stress between the first field effect tube group and the second field effect tube group during installation and making the air ducts on both sides connected, such as Figure 6 As shown, specifically including.

[0140] Step S41, place the top layer of the circuit board 7 upwards, slightly loosen the first M2.5X16 screw 101 and the second M2.5X16 screw 102, and release the mechanical matching stress between the first field effect transistor 11, the second field effect transistor 12, the third field effect transistor 13, the fourth field effect transistor 14, the fifth field effect transistor 15, the sixth field effect transistor 16, the seventh field effect transistor 17 and the eighth field effect transistor 18 during installation.

[0141] Step S42, slightly loosen the M2.5X12 screws 8 on both sides, and fine-tune the first V-shaped heat sink 1, the second V-shaped heat sink 2, the first W-shaped heat sink 4, and the second W-shaped heat sink 5, so that the four air ducts on both sides are connected, as shown in FIG. Fig.34 As shown; it helps to improve the heat dissipation of the field effect tube in the sandwich of the first V-shaped heat sink 1, the second V-shaped heat sink 2, the first W-shaped heat sink 4, and the second W-shaped heat sink 5.

[0142] Step S5, welding the first mold assembly and the second mold assembly; Figure 7 As shown, specifically including.

[0143] Step S51, the module to be welded is placed, and one side of the circuit board 7 of the module to be welded is placed on an unmounted second W-shaped heat sink 5, and both are placed horizontally on the desktop. Fig.35 As shown, the purpose is to make the module to be welded fit in a vertical relationship with the circuit board 7 to prevent the circuit board 7 from warping, tilting or bending relative to the module assembly.

[0144] Step S52, using an antistatic soldering iron, setting the temperature to about 385°C, sequentially solder the pins of the first field effect transistor 11, the second field effect transistor 12, the third field effect transistor 13, the fourth field effect transistor 14, the fifth field effect transistor 15, the sixth field effect transistor 16, the seventh field effect transistor 17 and the eighth field effect transistor 18; the large area of ​​green in the bottom line of the circuit board 7 is covered with solder resist material. The solder resist material is mainly used for copper plating of the circuit board line: tin resistance, oxidation resistance, short circuit and short circuit resistance, etc. The field effect tube line is partially not covered with solder resist material. When welding, the partially exposed copper plating of the line should be tinned to increase its thickness. Fig.36 As shown, the purpose is to increase the current carrying capacity of the copper plating of the circuit and cope with the high temperature generated when the field effect tube is working, thereby improving the overall stability.

[0145] Step S6, verify the effectiveness of the repaired power amplifier module, such as Figure 8 As shown, specifically including.

[0146] Step S61, resistance measurement: resistance measurement is performed on the first field effect transistor 11, the second field effect transistor 12, the third field effect transistor 13, the fourth field effect transistor 14, the fifth field effect transistor 15, the sixth field effect transistor 16, the seventh field effect transistor 17 and the eighth field effect transistor 18 of the repaired power amplifier module, and the resistance between the power supply VCC and GND is measured using the ohm range of a multimeter. The value displayed on the multimeter gradually changes and then stabilizes to about 478KΩ.

[0147] Step S62, power-on test: install the repaired power amplifier module to the "power amplifier module test platform" for power-on test to check whether its working output waveform is normal.

[0148] Step S63, temperature measurement: thermal imaging or temperature measurement is performed on the power amplifier module that has completed the power-on test, and then image and data comparison is performed, such as Fig.37 , 38 As shown, by comparing the thermal images, it can be seen that the heating characteristics of the field effect tube heat dissipation area of ​​the power amplifier module without fault and the power amplifier module with fault are consistent after repair; the highest temperature of the field effect tube of the repaired power amplifier module is 54.8℃. Therefore, this method can achieve high-quality repair of the faulty power amplifier module.

[0149] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions described in the above embodiments may still be modified, or some or all of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for replacing a field effect tube based on a DX transmitter power amplifier module, the power amplifier module comprising a first split-mode bulk combination and a second split-mode bulk combination, the first split-mode bulk combination comprising a first field effect tube group, a first V-shaped heat sink (1) and a second V-shaped heat sink (2); the second split-mode bulk combination comprising a second field effect tube group, a first W-shaped heat sink (4) and a second W-shaped heat sink (5); characterized in that: include: Step S1, judging the fault of the power amplifier module, measuring the resistance between the pins of the first field effect tube group and the second field effect tube group in the cut-off state and the on-state by using the "ohm range" of a digital multimeter; Step S2, if it is determined that the first field effect tube group and the second field effect tube group are abnormal in the cut-off state and the on state, the first split-mode bulk assembly and the second split-mode bulk assembly are completely dismantled and cleaned; Step S3, replacing the first field effect transistor group and the second field effect transistor group of the same batch, and installing the first split-mode bulk assembly and the second split-mode bulk assembly; Step S4, releasing the mechanical matching stress between the first field effect tube group and the second field effect tube group during installation and allowing the air ducts on both sides to penetrate; Step S5, welding the first mold-partitioned assembly and the second mold-partitioned assembly; Step S6, verifying the effectiveness of the repaired power amplifier module.

2. A method for replacing a field effect tube based on a DX transmitter power amplifier module according to claim 1, characterized in that: In the step S1, the first field effect tube group comprises a first field effect tube (11), a second field effect tube (12), a third field effect tube (13) and a fourth field effect tube (14); the first field effect tube (11) and the second field effect tube (12) are respectively padded with a first insulating pad (3) and fixed on the first V-shaped heat sink (1); the third field effect tube (13) and the fourth field effect tube (14) are respectively padded with a first insulating pad (3) and fixed on the second V-shaped heat sink (2); the second field effect tube group comprises a fifth field effect tube (15), a sixth field effect tube (16), a seventh field effect tube (17) and an eighth field effect tube (18); the fifth field effect tube (15) and the sixth field effect tube (16) are respectively padded with a second insulating pad (6) and fixed on the first W-shaped heat sink (4); the seventh field effect tube (17) and the eighth field effect tube (18) are respectively padded with a second insulating pad (6) and fixed on the second W-shaped heat sink (5); Performing fault judgment on the first field effect transistor (11), comprising: The pins of the first field effect tube (11) are short-circuited at the same time to discharge the inside of the first field effect tube (11), which is now in a cut-off state; Verification of the cut-off state: if the black test lead is connected to the D pole and the red test lead is connected to the S pole, the multimeter displays about 300 kΩ; if the black test lead is connected to the S pole and the red test lead is connected to the D pole, the multimeter displays a megohm resistance or infinity, indicating that the first field effect tube (11) is in the cut-off state and the built-in diode is normal, otherwise it is abnormal; The black test lead is connected to the D pole, and the red test lead touches the G pole, and at this time, the first field effect transistor (11) is in the on state; Conductive state verification, the black test lead is connected to the D pole, the red test lead is connected to the S pole, and the multimeter displays about 0.3Ω, indicating that the first field effect tube (11) is in the conductive state and the built-in diode is normal, otherwise it is abnormal; The method of performing fault judgment on the first field effect tube (11) is used to respectively perform fault judgment on the second field effect tube (12), the third field effect tube (13), the fourth field effect tube (14), the fifth field effect tube (15), the sixth field effect tube (16), the seventh field effect tube (17) and the eighth field effect tube (18).

3. A method for replacing a field effect tube based on a DX transmitter power amplifier module according to claim 2, characterized in that: When each field effect tube is in the cut-off state or the on state, the resistance between the G pole and the D pole or the S pole is infinite.

4. The method for replacing a field effect tube based on a DX transmitter power amplifier module according to claim 1, characterized in that: The step S2 comprises: Step S21, remove the two M2.5X12 screws (8), the M2.5X6 screw (9), the first M2.5X16 screw (101), the second M2.5X16 screw (102), the first insulating pad (3) and the second insulating pad (6) from the first split mold assembly and the second split mold assembly, and place them in a material box for safekeeping; Step S22, removing the first V-shaped heat sink (1), the second V-shaped heat sink (2), the first W-shaped heat sink (4) and the second W-shaped heat sink (5), peeling them off from the back side of the field effect tube respectively, and removing them one by one; Step S23, using diagonal pliers to cut off the G poles and S poles of the pins on both sides of the eight field effect tubes respectively; Step S24, using an electric soldering iron of suitable temperature to remove the eight field effect tubes and the remaining D poles of the pins from the circuit board (7), and using a solder sucker to clean the residual tin in the corresponding solder pads of the eight field effect tubes on the circuit board (7); Step S25, residual tin cleaning effect inspection: a new field effect tube is used to test-insert into the eight field effect tube welding positions on the circuit board (7), and the pin of the new field effect tube can be smoothly inserted into the welding pad and there is a gap between the pin and the welding pad; Step S26, checking and confirming that the copper coating of the pads and related circuits on the circuit board (7) is not lifted or peeled off; Step S27, cleaning the surfaces of the circuit board (7), the first V-shaped heat sink (1), the second V-shaped heat sink (2), the first W-shaped heat sink (4) and the second W-shaped heat sink (5) to create a good operating environment for the repair work.

5. A method for replacing a field effect tube based on a DX transmitter power amplifier module according to claim 4, characterized in that: The step S3 comprises: Install the first split mold assembly: Step S31, respectively screwing the two first M2.5X16 screws (101) into the nut from the back side of the second V-shaped heat sink (2), with the depth being that the end surface of the first M2.5X16 screw (101) protrudes 5 mm from the front side of the second V-shaped heat sink (2); Step S32, temporary suspension, two of the first M2.5X16 screws (101) are protruded from the front of the second V-shaped heat sink (2) at the installation position, the first insulating pad (3) and the third field effect transistor (13) are respectively strung on one of the first M2.5X16 screws (101), and the first insulating pad (3) and the fourth field effect transistor (14) are respectively strung on one of the first M2.5X16 screws (101), and the screwing depth of the first M2.5X16 screw (101) is adjusted so that the end surfaces of the two first M2.5X16 screws (101) do not exceed the front of the third field effect transistor (13) and the fourth field effect transistor (14); Step S33, facing the sharp corner of the second V-shaped heat sink (2) suspended therefrom, the back side of the first V-shaped heat sink (1) is respectively attached to the front sides of the third field effect tube (13) and the fourth field effect tube (14), and the two side wings are wrapped around the side wings of the second V-shaped heat sink (2), and are moved parallel to each other from top to bottom until the front and rear mounting holes of the first V-shaped heat sink (1) and the second V-shaped heat sink (2) are coaxial; Step S34, using two 25 mm dovetail clamps (19) to clamp the first V-shaped heat sink (1) and the second V-shaped heat sink (2) from the top, so that the first insulating pad (3), the third field effect transistor (13) and the fourth field effect transistor (14) temporarily suspended on the second V-shaped heat sink (2) are firmly clamped between the first V-shaped heat sink (1) and the second V-shaped heat sink (2); Step S35, making the mounting surface of the fourth field effect tube (14) of the second V-shaped heat sink (2) horizontal, and unscrewing the first M2.5X16 screw (101) corresponding to the horizontal surface; Step S36, use the first M2.5X16 screw (101) to string the second field effect tube (12) and the first insulating pad (3) from top to bottom, then penetrate the field effect tube installation hole on the first V-shaped heat sink (1), and then penetrate the fourth field effect tube (14) and the first insulating pad (3) sandwiched between the first V-shaped heat sink (1) and the second V-shaped heat sink (2), and then screw into the embedded nut on the second V-shaped heat sink (2), so as to install the first field effect tube (11) and the first insulating pad (3) on the other side. At this point, the installation of the first split-mode assembly is completed.

6. A method for replacing a field effect tube based on a DX transmitter power amplifier module according to claim 5, characterized in that: The step S3 further comprises: Install the second parting assembly: Step S37, respectively screw the two second M2.5X16 screws (102) into the embedded nuts from the back side of the first W-shaped heat sink (4), with the depth being that the end surface of the second M2.5X16 screw (102) protrudes 5 mm from the front side of the first W-shaped heat sink (4); Step S38, two second M2.5X16 screws (102) are protruded from the front of the first W-shaped heat sink (4) at the installation position, and the second insulating pad (6) and the fifth field effect transistor (15) are respectively strung on one of the second M2.5X16 screws (102), and the second insulating pad (6) and the sixth field effect transistor (16) are respectively strung on one of the second M2.5X16 screws (102), and the two second M2.5X16 screws (102) are temporarily suspended and fine-tuned so that their end surfaces do not exceed the front of the fifth field effect transistor (15) and the sixth field effect transistor (16); Step S39, covering the second W-shaped heat sink (5) and making the field effect tube mounting hole on the second W-shaped heat sink (5) coaxial with the first W-shaped heat sink (4); Step S310, using two 25 mm dovetail clamps (19) to clamp the first W-shaped heat sink (4) and the second W-shaped heat sink (5) from the top, so that the fifth field effect transistor (15), the sixth field effect transistor (16) and the second insulating pad (6) suspended on the first W-shaped heat sink (4) are firmly clamped between the first W-shaped heat sink (4) and the second W-shaped heat sink (5); Step S311, making the mounting surface of the fifth field effect transistor (15) of the first W-shaped heat sink (4) horizontal, and unscrewing the second M2.5X16 screw (102) temporarily suspending the fifth field effect transistor (15); Step S312, use the second M2.5X16 screw (102) to string the seventh field effect transistor (17) and the second insulating pad (6) from top to bottom, then insert it into the field effect transistor installation hole on the second W-shaped heat sink (5), and then pass through the fifth field effect transistor (15) and the second insulating pad (6) sandwiched between the first W-shaped heat sink (4) and the second W-shaped heat sink (5), and then screw into the embedded nut on the first W-shaped heat sink (4), so as to install the eighth field effect transistor (18) and the second insulating pad (6) on the other side. At this point, the installation of the second split-mode assembly is completed.

7. A method for replacing a field effect tube based on a DX transmitter power amplifier module according to claim 6, characterized in that: The step S3 further comprises: The first mold-parting assembly and the second mold-parting assembly are integrally installed: Step S313, the second split-mode assembly is assembled with the pins of the fifth field effect transistor (15), the sixth field effect transistor (16), the seventh field effect transistor (17) and the eighth field effect transistor (18) facing upwards, and a magnetic ring (20) is respectively connected in series to the middle pins of the fifth field effect transistor (15), the sixth field effect transistor (16), the seventh field effect transistor (17) and the eighth field effect transistor (18); Step S314, keeping the second split-mode bulk assembly in the shape in step S312, the top layer of the circuit board (7) is facing downward, the pads on the circuit board (7) corresponding to the fifth field effect transistor (15), the sixth field effect transistor (16), the seventh field effect transistor (17) and the eighth field effect transistor (18) are aligned with the pins of the fifth field effect transistor (15), the sixth field effect transistor (16), the seventh field effect transistor (17) and the eighth field effect transistor (18) and then vertically inserted, and then two of the M2.5X6 screws (9) are respectively passed through the fixing ears on the second W-shaped heat sink (5) and screwed into the embedded nuts on the circuit board (7), so as to fix the second split-mode bulk assembly on the circuit board (7); Step S315, flip the circuit board (7) with the top layer facing upward, align the pins of the first field effect transistor (11), the second field effect transistor (12), the third field effect transistor (13) and the fourth field effect transistor (14) on the first split-module assembly with the corresponding soldering pads of the first field effect transistor (11), the second field effect transistor (12), the third field effect transistor (13) and the fourth field effect transistor (14) on the circuit board (7), and vertically insert them, and then install the M2.5X12 screws (8) on both sides respectively to form a module to be welded.

8. The method for replacing a field effect tube based on a DX transmitter power amplifier module according to claim 7, characterized in that: The step S4 comprises: Step S41, place the top layer of the circuit board (7) upwards, slightly loosen the first M2.5X16 screw (101) and the second M2.5X16 screw (102), and release the mechanical matching stress between the eight field effect transistors during installation; Step S42, slightly loosen the M2.5X12 screws (8) on both sides, and fine-tune the first V-shaped heat sink (1), the second V-shaped heat sink (2), the first W-shaped heat sink (4) and the second W-shaped heat sink (5) to make the air ducts on both sides connected.

9. A method for replacing a field effect tube based on a DX transmitter power amplifier module according to claim 8, characterized in that: The step S5 comprises: Step S51, placing the module to be welded, placing one side of the circuit board (7) of the module to be welded on an unmounted second W-shaped heat sink (5), and placing both horizontally on a desktop; Step S52, using an anti-static soldering iron with the temperature set to about 385°C, soldering the pins of the eight field effect transistors in turn.

10. The method for replacing a field effect tube based on a DX transmitter power amplifier module according to claim 7, characterized in that: The step S6 comprises: Step S61, resistance measurement: measuring the resistance of the eight field effect tube paths of the repaired power amplifier module, using the ohmmeter of a multimeter to measure the resistance between the power supply VCC and GND, and the value displayed by the multimeter changes gradually; Step S62, power-on test: installing the repaired power amplifier module to the "power amplifier module test platform" for power-on test to check whether its working output waveform is normal; Step S63, temperature measurement: thermal imaging or temperature measurement is performed on the power amplifier module that has completed the power-on test, and then image and data comparison is performed.

Images