A horizontal magnetron sputtering thin film deposition equipment to reduce wafer surface damage

Abstract

The present invention discloses a horizontal magnetron sputtering thin film deposition device for reducing wafer surface damage, and relates to the technical field of thin film deposition devices. The device comprises a reaction gas input system, a vacuum system, a control system and a rack, wherein a reaction tube and a filter tube are sequentially arranged in the rack, an air inlet and an air outlet are arranged on the filter tube, the air inlet and the air outlet are respectively connected to the reaction gas input system and the upper end of the reaction tube through pipelines, the reaction tube is connected to the vacuum system through pipelines, a magnetic control is installed on the upper side of the reaction tube, a target material is installed below the magnetic control, a base is installed below the target material, a support shaft is arranged on the lower side of the base, and a detection tube is sleeved on the outer side of the support shaft; the base is used for preheating and carrying wafers, the vacuum system forms a vacuum inside the reaction tube, the reaction gas input system transports the reaction gas into the reaction tube, and the detection tube detects and adjusts the position of the base.

Description

Technical Field

[0001] The invention relates to the technical field of thin film deposition equipment, in particular to a horizontal magnetron sputtering thin film deposition equipment capable of reducing wafer surface damage. Background Art

[0002] Wafers are the core material in semiconductor manufacturing. They are mainly made of high-purity single-crystal silicon and are in the shape of round thin slices. The manufacturing process is complicated, including purifying polysilicon from quartz sand, then processing it to form single-crystal silicon rods, and finally slicing it to get wafers. Wafers come in a variety of sizes, such as 6 inches, 8 inches, 12 inches, etc. The larger the diameter, the higher the production efficiency and the lower the cost.

[0003] In integrated circuit manufacturing, the surface of the wafer undergoes thin film deposition, photolithography, doping, etching and other steps to form various circuit structures. These circuit structures are eventually cut into independent chips and packaged into electronic components, such as processors and memory. The quality, purity and processing accuracy of the wafer directly affect the performance and yield of the chip, and are the basis for manufacturing high-performance integrated circuits.

[0004] In the existing magnetron sputtering coating process, the pedestal is placed in a vacuum chamber or reaction chamber to support the wafer. Due to the influence of the assembly process and the installation position of the vacuum chamber, the levelness of the pedestal is often difficult to accurately control. Moreover, once the pedestal is assembled, the levelness cannot be corrected, which has a negative impact on the process accuracy and stability. Summary of the invention

[0005] The object of the present invention is to provide a horizontal magnetron sputtering thin film deposition device capable of reducing wafer surface damage, so as to solve the problems raised in the prior art.

[0006] To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a horizontal magnetron sputtering thin film deposition device for reducing wafer surface damage, comprising a reaction gas input system, a vacuum system and a control system, and a frame, wherein a reaction cylinder and a filter cylinder are sequentially arranged in the frame, and an air inlet and an air outlet are arranged on the filter cylinder, and the air inlet and the air outlet are respectively connected to the reaction gas input system and the upper end of the reaction cylinder through pipelines, and the reaction cylinder is connected to the vacuum system through a pipeline, a magnetic control is installed on the upper side of the reaction cylinder, a target material is installed below the magnetic control, a base is installed below the target material, a support shaft is arranged on the lower side of the base, and a detection cylinder is sleeved on the outer side of the support shaft;

[0007] The base is used to preheat and carry the wafer, the vacuum system forms a vacuum inside the reaction cylinder, the reaction gas input system transports the reaction gas into the reaction cylinder, the reaction gas input system, the vacuum system, the magnetic control and the target material cooperate to realize the thin film deposition of the wafer, and the detection cylinder detects and adjusts the position of the base.

[0008] The detection cylinder is arranged on the reaction cylinder, a sleeve is sleeved inside the detection cylinder, a partition is arranged on the upper side of the sleeve, an elastic sealing ring is arranged in the middle of the partition, multiple groups of fixed balls are arranged on the sleeve below the partition, and multiple groups of fixed balls on the side away from the sleeve are all provided with sliding shafts, and sliding cylinders and sliding balls are slidably mounted on the sliding shafts in sequence, and the sliding cylinders are arranged on the sliding balls, and a reset tension spring is connected between the fixed balls and the sliding balls, and the reset tension spring is sleeved on the sliding shaft and the sliding cylinder, a sealing plate is arranged at one end of the sliding cylinder, and a metal ring is arranged at the other end of the sliding cylinder;

[0009] A coil A is embedded in the sliding shaft, and the coil A is located inside the sliding cylinder and in sliding contact with the metal ring. The metal ring and the coil A are both electrically connected to the control system. A pressure sensor is provided on the sliding ball, and the pressure sensor is electrically connected to the control system.

[0010] A telescopic cylinder A and a telescopic cylinder B are connected between the fixed ball and the sliding ball. The telescopic cylinder A is located outside the reset tension spring, and the telescopic cylinder B is located outside the telescopic cylinder A. The telescopic cylinder A and the telescopic cylinder B are telescopic structures. The telescopic cylinder A is made of magnetic shielding material to separate the magnetic fields of the coil A and the coil B.

[0011] A heat-conducting medium is arranged between the outer side of the sliding shaft, the outer side of the sliding cylinder and the inner wall of the telescopic cylinder A. The heat-conducting medium is made of a material that expands when heated. A heating wire and a temperature sensor are arranged in sequence on the inner wall of the telescopic cylinder A. The heating wire is in contact with the heat-conducting medium. The heating wire is electrically connected to the control system. The temperature sensor detects the temperature of the heat-conducting medium.

[0012] The telescopic cylinder B is provided with a filling port and an exhaust port in sequence, a shaping chamber is formed between the outer side of the telescopic cylinder A and the inner side of the telescopic cylinder B, a coil B is buried in the telescopic cylinder B, the coil B is electrically connected to the control system, the filling port passes through the detection cylinder and the reaction cylinder through a pipeline and is connected to a filling system, the filling system is installed on the frame, the filling system is used to transport magnetorheological fluid into the shaping chamber, the filling port and the exhaust port are both installed with solenoid valves, the solenoid valves are electrically connected to the control system, the exhaust port and the solenoid valve installed inside thereof cooperate to realize the exhaust of the shaping chamber, so that the filling system can transport the magnetorheological fluid into the shaping chamber.

[0013] The filter cartridge is arranged on the frame, the interior of the filter cartridge is hollow, the air inlet and the air outlet are located on both sides of the filter cartridge, a spiral tube is arranged inside the filter cartridge, a spiral filter screen is sleeved inside the spiral tube, the spiral tube and the spiral filter screen are both made of spirals, a bracket is arranged in the middle of the spiral tube near the air inlet, a discharge plate is arranged on the inner wall of the spiral tube near the air outlet, a plurality of support plates are arranged on the inner wall of the spiral tube, the cross section of the spiral filter screen is cylindrical, one end of the spiral filter screen is arranged on the bracket, the middle of the spiral filter screen is respectively arranged on a plurality of support plates, and the other end of the spiral filter screen is arranged on the discharge plate;

[0014] The air inlet is connected to one end of the spiral tube, the air outlet passes through the middle of the discharge plate and is connected to the inside of the spiral filter screen, the discharge plate passes through the filter cartridge through a pipeline and is connected to the outside air, and another set of solenoid valves are installed in the pipeline, air inlet and air outlet connected to the discharge plate, and the other set of solenoid valves is electrically connected to the control system.

[0015] A driving motor is installed on the frame on one side of the reaction cylinder, and the driving motor is installed on the frame. A material tray is installed on one side of the driving motor, and the material tray is arranged on the frame. A proximity switch is arranged on the material tray, and the proximity switch is electrically connected to the control system. The material tray is used to store and place wafers. A rotating plate is installed on the output shaft of the driving motor, and a plurality of telescopic electric cylinders are installed on the rotating plate. A suction cup is installed on the telescopic rod of the telescopic electric cylinder, and the suction cup is connected to a negative pressure pump through a pipeline. The negative pressure pump is installed on the frame, and the negative pressure pump, the pipeline and the suction cup cooperate to realize the adsorption of the wafer;

[0016] A cover plate is installed on the upper side of the reaction cylinder, and a sealing connection is formed between the cover plate and the reaction cylinder.

[0017] Two groups of fixing frames are arranged on the frame on one side of the driving motor, and a carrier plate is rotatably mounted on both groups of fixing frames, one end of the carrier plate passes through the fixing frame and is connected to a rotating motor, the rotating motor is mounted on the frame, another group of suction cups is mounted on the fixing frame, and the suction cups on the fixing frame are connected to a negative pressure pump through a pipeline, and the rotating motor, the carrier plate and the other group of suction cups cooperate to realize the flipping of the wafer, so as to facilitate thin film deposition on the reverse side of the wafer;

[0018] A plurality of resistors are arranged on the base, and the plurality of resistors are electrically connected to the control system.

[0019] The reaction tube is arranged on the frame, the interior of the reaction tube is hollow, the magnetic control component and the target material are electrically connected to the control system, the magnetic control component and the target material are arranged on the reaction tube, and the base is inserted into the detection tube through the support shaft and contacts with the sliding ball.

[0020] The filling system includes a vacuum pump and a liquid storage tank, which are installed on a frame. Magnetorheological fluid is stored in the liquid storage tank. The inlet of the vacuum pump is connected to the liquid storage tank through a pipeline, and the outlet of the vacuum pump is connected to the filling port through a pipeline passing through a reaction cylinder and a detection cylinder. Another set of solenoid valves are installed in the filling port and the exhaust port.

[0021] A sliding door is slidably arranged on the frame, a control panel is arranged on the frame, and the control system is arranged in the control panel.

[0022] Compared with the prior art, the present invention has the following beneficial effects:

[0023] 1. The automatic leveling of the base is realized to ensure the process accuracy and stability of the thin film deposition equipment. Multiple sliding balls move radially inward at the same time to position the support shaft, so that the support shaft is in a vertical state, and the base is set on the upper side of the support shaft, so the base is in a horizontal state, so that the wafer can be placed on the base; then the magnetorheological fluid in the liquid storage tank is transported to the shaping chamber between the telescopic cylinder A and the telescopic cylinder B through the filling port through the vacuum pump, so that the magnetorheological fluid fills the shaping chamber, and the gas in the shaping chamber is discharged through the exhaust port. The control system controls coil B to connect to the circuit, and coil B generates a magnetic field. The magnetic field of coil B changes the magnetorheological fluid from the original liquid state to a solid state, so that the shaping chamber remains stable and the horizontal stability of the base is ensured.

[0024] 2. Filter the reaction gas to prevent impurities from clogging the pipeline. The solenoid valves in the air inlet and air outlet are controlled to open. The control system delivers the reaction gas to the filter cylinder through the air inlet through the reaction gas input system. The reaction gas enters the spiral tube through the air inlet. After passing through the spiral filter, the reaction gas enters the reaction cylinder from the air outlet. The impurity particles cannot pass through the spiral filter. The impurity particles are deposited in the chamber between the outer side of the spiral filter and the inner wall of the spiral tube, realizing the separation of impurities and reaction gas, preventing the impurity particles from causing adverse effects on the inside of the reaction cylinder and preventing the impurity particles from clogging the pipeline.

[0025] 3. Wafer flipping can directly deposit thin films on the front and back of the wafer. The telescopic cylinder drives the wafer upward through the suction cup, and the wafer is placed on the base through the drive motor and the telescopic cylinder. Thin film deposition is performed again, which can save thin film deposition time and improve efficiency. At the same time, the suction cup and negative pressure pump are used to adsorb and position the wafer, which can reduce damage to the wafer surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0027] Figure 2 yes Figure 1 Schematic diagram of the structure after removing the sliding door and upper rack;

[0028] Figure 3 yes Figure 2 A schematic diagram of the structure of the left part of the middle part;

[0029] Figure 4 It is a schematic diagram of the internal structure of the reaction tube;

[0030] Figure 5 yes Figure 4 A partial enlarged view of the middle A area;

[0031] Figure 6 yes Figure 4 A partial enlarged view of the middle B area;

[0032] Figure 7 It is a schematic diagram of the structure of the spiral tube (the direction of the arrow is the flow direction of the reaction gas);

[0033] Figure 8 This is the front view of the spiral tube (partial cross-sectional views are made at both ends);

[0034] Fig. 9 yes Figure 8 A partial enlarged view of the middle C area;

[0035] Fig.10 yes Figure 8 A partial enlarged view of the D area in the middle.

[0036] In the figure: 1, control panel; 11, rack; 12, sliding door; 2, reaction cylinder; 201, cover plate; 21, magnetic control; 22, target; 23, base; 231, support shaft; 3, filter cylinder; 301, air inlet; 302, air outlet; 31, spiral tube; 311, bracket; 312, discharge plate; 313, support plate; 32, spiral filter; 4, detection cylinder; 41, sleeve; 42 , fixed ball; 421, sliding shaft; 43, sliding ball; 431, metal ring; 432, sliding cylinder; 44, telescopic cylinder A; 441, telescopic cylinder B; 442, filling port; 443, exhaust port; 45, coil B; 451, coil A; 5, driving motor; 51, material tray; 52, rotating plate; 53, telescopic electric cylinder; 54, suction cup; 6, fixed frame; 61, loading plate; 62, rotating motor. DETAILED DESCRIPTION

[0037] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0038] Example: Figure 1-Figure 10 As shown, the present invention provides a technical solution for a horizontal magnetron sputtering thin film deposition device for reducing wafer surface damage, including a reaction gas input system (not shown in the figure), a vacuum system (not shown in the figure), a control system and a frame 11, wherein a reaction tube 2 and a filter tube 3 are sequentially arranged in the frame 11, and an air inlet 301 and an air outlet 302 are arranged on the filter tube 3, and the air inlet 301 and the air outlet 302 are respectively connected to the reaction gas input system and the upper end of the reaction tube 2 through pipelines, and the reaction tube 2 is connected to the vacuum system through a pipeline, a magnetic control unit 21 is installed on the upper side of the reaction tube 2, a target material 22 is installed below the magnetic control unit 21, a base 23 is installed below the target material 22, a support shaft 231 is arranged on the lower side of the base 23, and a detection The measuring tube 4 and the reaction tube 2 are arranged on the frame 11. The interior of the reaction tube 2 is hollow. The magnetic control 21 and the target 22 are electrically connected to the control system. The magnetic control 21 and the target 22 are arranged on the reaction tube 2. The base 23 is inserted into the detection tube 4 through the support shaft 231 and contacts with the sliding ball 43; the base 23 is used for preheating and carrying the wafer, the vacuum system forms a vacuum inside the reaction tube 2, the reaction gas input system transports the reaction gas into the reaction tube 2, the reaction gas input system, the vacuum system, the magnetic control 21 and the target 22 cooperate to realize the thin film deposition of the wafer, the detection tube 4 detects and adjusts the position of the base 23, the frame 11 is slidingly provided with a sliding door 12, the frame 11 is provided with a control panel 1, and the control system is arranged in the control panel 1.

[0039] The detection tube 4 is arranged on the reaction tube 2, and a sleeve 41 is sleeved inside the detection tube 4. A partition is arranged on the upper side of the sleeve 41, and an elastic sealing ring is arranged in the middle of the partition. A plurality of groups of fixed balls 42 are arranged on the sleeve 41 below the partition. A sliding shaft 421 is arranged on each of the plurality of fixed balls 42 on the side away from the sleeve 41. A sliding tube 432 and a sliding ball 43 are slidably mounted on the sliding shaft 421 in sequence. The sliding tube 432 is arranged on the sliding ball 43. A reset spring is connected between the fixed ball 42 and the sliding ball 43. The reset spring sleeve is arranged on the sliding shaft 421. On the sliding shaft 421 and the sliding cylinder 432, a sealing plate is arranged at one end of the sliding cylinder 432, and the sealing plate prevents the heat-conducting medium from entering the interior of the sliding cylinder 432. A metal ring 431 is arranged at the other end of the sliding cylinder 432. A coil A451 is buried on the sliding shaft 421, and the coil A451 is located inside the sliding cylinder 432 and is in sliding contact with the metal ring 431. The metal ring 431 and the coil A451 are both electrically connected to the control system. A pressure sensor is arranged on the sliding ball 43, and the pressure sensor is electrically connected to the control system.

[0040] A telescopic cylinder A44 and a telescopic cylinder B441 are connected between the fixed ball 42 and the sliding ball 43. The telescopic cylinder A44 is located on the outside of the reset tension spring, and the telescopic cylinder B441 is located on the outside of the telescopic cylinder A44. The telescopic cylinder A44 and the telescopic cylinder B441 are telescopic structures. A heat-conducting medium (not shown in the figure) is arranged between the outside of the sliding shaft 421, the outside of the sliding cylinder 432 and the inner wall of the telescopic cylinder A44. The heat-conducting medium is made of a material that expands when heated. A heating wire and a temperature sensor are arranged on the inner wall of the telescopic cylinder A44 in sequence. The heating wire is in contact with the heat-conducting medium, and the heating wire is electrically connected to the control system. The temperature sensor detects the temperature of the heat-conducting medium. A filling port 442 and an exhaust port 443 are arranged on the telescopic cylinder B441 in sequence. A shaping chamber is formed between the outside of the telescopic cylinder A44 and the inside of the telescopic cylinder B441. A coil B45 is buried in the telescopic cylinder B441. The coil B45 and the control system are electrically connected to the control system. The temperature sensor detects the temperature of the heat-conducting medium. A filling port 442 and an exhaust port 443 are arranged on the telescopic cylinder B441 in sequence. A shaping chamber is formed between the outside of the telescopic cylinder A44 and the inside of the telescopic cylinder B441. A coil B45 is buried in the telescopic cylinder B441. The control system is electrically connected, and the filling port 442 passes through the detection tube 4 and the reaction tube 2 through a pipeline and is connected to the filling system. The filling system is installed on the frame 11. The filling system is used to transport the magnetorheological fluid into the molding chamber. The filling port 442 and the exhaust port 443 are both equipped with solenoid valves. The solenoid valve is electrically connected to the control system. The exhaust port 443 and the solenoid valve installed inside cooperate to achieve the exhaust of the molding chamber, so that the filling system can transport the magnetorheological fluid into the molding chamber. The filling system includes a vacuum pump and a liquid storage tank. The vacuum pump and the liquid storage tank (not shown in the figure) are installed on the frame 11. The magnetorheological fluid is stored in the liquid storage tank. The inlet of the vacuum pump is connected to the liquid storage tank through a pipeline, and the outlet of the vacuum pump (not shown in the figure) passes through the reaction tube 2 and the detection tube 4 through a pipeline and is connected to the filling port 442. Another set of solenoid valves are installed in the filling port 442 and the exhaust port 443.

[0041] The filter cartridge 3 is arranged on the frame 11. The filter cartridge 3 is hollow inside. The air inlet 301 and the air outlet 302 are located on both sides of the filter cartridge 3. A spiral tube 31 is arranged inside the filter cartridge 3. A spiral filter screen 32 is sleeved inside the spiral tube 31. Both the spiral tube 31 and the spiral filter screen 32 are made of spirals. A bracket 311 is arranged in the middle of the spiral tube 31 near the air inlet 301. A discharge plate 312 is arranged on the inner wall of the spiral tube 31 near the air outlet 302. A plurality of support plates 313 are arranged on the inner wall of the spiral tube 31. The cross section of the spiral filter screen 32 is cylindrical. One end of the spiral filter 32 is arranged on the bracket 311, the middle part of the spiral filter 32 is respectively arranged on several support plates 313, and the other end of the spiral filter 32 is arranged on the discharge plate 312; the air inlet 301 is connected with one end of the spiral tube 31, the air outlet 302 passes through the middle part of the discharge plate 312 and is connected with the inside of the spiral filter 32, the discharge plate 312 passes through the filter cartridge 3 through the pipeline and is connected with the external air, and another group of solenoid valves are installed in the pipeline connected to the discharge plate 312, the air inlet 301 and the air outlet 302, and the other group of solenoid valves are electrically connected to the control system.

[0042] A driving motor 5 is installed on the frame 11 on one side of the reaction cylinder 2. The driving motor 5 is installed on the frame 11. A material tray 51 is installed on one side of the driving motor 5. The material tray 51 is arranged on the frame 11. A proximity switch is arranged on the material tray 51. The proximity switch is electrically connected to the control system. The material tray 51 is used to store and place wafers. A rotating plate 52 is installed on the output shaft of the driving motor 5. A plurality of telescopic electric cylinders 53 are installed on the rotating plate 52. A suction cup 54 is installed on the telescopic rod of the telescopic electric cylinder 53. The suction cup 54 is connected to the negative pressure pump through a pipeline. The negative pressure pump is installed on the frame 11. The negative pressure pump, the pipeline and the suction cup 54 cooperate to realize the adsorption of the wafer; a vacuum pump 54 is installed on the upper side of the reaction cylinder 2. There is a cover plate 201, and a sealed connection is formed between the cover plate 201 and the reaction tube 2; two groups of fixed frames 6 are arranged on the frame 11 on one side of the driving motor 5, and a carrier plate 61 is rotatably installed on the two groups of fixed frames 6, and one end of the carrier plate 61 passes through the fixed frame 6 and is connected to a rotating motor 62, which is installed on the frame 11, and another group of suction cups 54 are installed on the fixed frame 6, and the suction cups 54 on the fixed frame 6 are connected to the negative pressure pump through a pipeline, and the rotating motor 62, the carrier plate 61 and the other group of suction cups 54 cooperate to realize the flipping of the wafer, so as to facilitate the thin film deposition on the back side of the wafer; a plurality of resistors are arranged on the base 23, and the plurality of resistors are electrically connected to the control system.

[0043] Working principle: the staff pushes the sliding door 12 to move to the right, and inserts the support shaft 231 on the lower side of the base 23 into the detection cylinder 4 through the elastic sealing ring on the partition. After the support shaft 231 enters the detection cylinder 4, it contacts with multiple sliding balls 43. The support shaft 231 pushes the multiple sliding balls 43 to move outward (away from the support shaft 231) and compresses the reset spring. The sliding ball 43 synchronously drives the sliding cylinder 432 and the metal ring 431 to slide on the sliding shaft 421, so that the metal ring 431 slides a certain distance on the coil A451.

[0044] After the support shaft 231 is inserted into the detection cylinder 4, the staff closes the sliding door 12 and presses the automatic positioning button on the control panel 1. The control system first detects the tilt angle of the support shaft 231 and then adjusts the support shaft 231 to a vertical position.

[0045] The control system connects the metal ring 431 and one end of the coil A451 to the circuit (the other end of the coil A451 is in a disconnected state), and the current enters the coil A451 from the metal ring 431, flows through the coil A451, and then flows out from one end to the control system. The control system detects the current and calculates the distance that the support shaft 231 pushes the sliding ball 43 to move. Since there are multiple sliding balls 43 in the detection cylinder 4 that are in contact with the support shaft 231, the control system can obtain the distances that the support shaft 231 pushes the multiple sliding balls 43 respectively, and record them as actual distances.

[0046] After the control system obtains the actual distances corresponding to the multiple sliding balls 43, it compares the actual distance with the standard distance (the standard distance is set by the staff through the control panel 1). When the actual distance is equal to the standard distance, that is, the support shaft 231 is in a vertical state, no adjustment is made; when the actual distance is less than or greater than the standard distance, that is, the support shaft 231 is in a tilted state, adjustment is required.

[0047] When the support shaft 231 is in a tilted state, the control system connects the heating wire on the inner wall of the telescopic cylinder A44 on one side of each sliding ball 43 to the circuit. The heating wire generates heat and transfers the heat to the heat-conducting medium. The heat-conducting medium expands and pushes the sliding ball 43 to move inward (toward the side close to the support shaft 231). Since a plurality of sliding balls 43 are arranged on the outside of the support shaft 231, the plurality of sliding balls 43 move radially inward at the same time to position the support shaft 231, so that the support shaft 231 is in a vertical state, and the base 23 is arranged on the upper side of the support shaft 231, so the base 23 is in a horizontal state, so as to facilitate the placement of the wafer on the base 23.

[0048] After the multiple sliding balls 43 position the support shaft 231, the control system opens the solenoid valves in the filling port 442 and the exhaust port 443, and uses the vacuum pump to transport the magnetorheological fluid in the liquid storage tank through the filling port 442 to the shaping chamber between the telescopic cylinder A44 and the telescopic cylinder B441, so that the magnetorheological fluid fills the shaping chamber, and the gas in the shaping chamber is discharged through the exhaust port 443. The vacuum pump feeds back the flow data of the magnetorheological fluid to the control system. After that, the control system controls the coil B45 to connect to the circuit, and the coil B45 generates a magnetic field. The magnetic field of the coil B45 causes the magnetorheological fluid (not shown in the figure) to change from the original liquid state to a solid state, so that the shaping chamber remains stable, thereby ensuring the stable positioning of the support shaft 231.

[0049] After the adjustment of the support shaft 231 or the base 23 is completed, the staff presses the start button on the control panel 1, the thin film deposition equipment starts, the staff opens the sliding door 12, and removes the cover 201, and finally places the wafer on the tray 51, the tray 51 positions the wafer, and the proximity switch on the tray 51 feeds back the position data of the wafer to the control system, the control system first connects the resistor on the base 23 to the circuit, so that the resistor heats the base 23, and then the control system controls the drive motor 5 to drive the rotating plate 52 to rotate a certain angle, so that the suction cup 54 on the rotating plate 52 is opposite to the wafer on the tray 51, and the telescopic electric cylinder 53 drives the suction cup 54 on the rotating plate 52 to move downward, so that the suction cup 54 on the rotating plate 52 and the negative pressure pump cooperate to adsorb and position the wafer, and the suction cup 54 on the rotating plate 52 adsorbs the wafer to reduce the damage to the wafer surface.

[0050] After the suction cup 54 on the rotating plate 52 sucks and positions the wafer, the negative pressure pump feeds back the pressure data to the control system, and the control system controls the telescopic electric cylinder 53 to drive the suction cup 54 on the rotating plate 52 and the wafer to move upward. The driving motor 5 drives the wafer to be located directly above the reaction tube 2 through the rotating plate 52, the telescopic electric cylinder 53 and the suction cup 54 (the suction cup 54 on the rotating plate 52). The telescopic electric cylinder 53 drives the suction cup 54 on the rotating plate 52 and the wafer to move downward, so that the wafer contacts the upper side of the base 23. The negative pressure pump and the suction cup 54 on the rotating plate 52 cooperate to loosen the wafer, so that the wafer is placed on the base 23.

[0051] After the wafer is placed on the base 23, the resistor preheats the wafer to increase the wafer temperature to facilitate subsequent thin film deposition. The telescopic electric cylinder 53 feeds back the displacement data of the wafer to the control system. The control system controls the telescopic electric cylinder 53 to drive the suction cup 54 on the rotating plate 52 to move upward. The drive motor 5 drives the telescopic electric cylinder 53 and the suction cup 54 (the suction cup 54 on the rotating plate 52) away from the wafer through the rotating plate 52. Afterwards, the staff closes the reaction tube 2 again through the cover plate 201 to achieve the sealing of the reaction tube 2.

[0052] After the reaction tube 2 is sealed, the control system makes the interior of the reaction tube 2 in a vacuum state through the vacuum system and the pipeline. Then the control system controls the electromagnetic valves in the air inlet 301 and the air outlet 302 to open. The control system transports the reaction gas to the filter tube 3 through the air inlet 301 through the reaction gas input system. The reaction gas enters the spiral tube 31 through the air inlet 301. The reaction gas passes through the spiral filter 32 and then enters the reaction tube 2 from the air outlet 302. Impurity particles cannot pass through the spiral filter 32. Impurity particles are deposited in the chamber between the outer side of the spiral filter 32 and the inner wall of the spiral tube 31, thereby realizing the separation of impurities and reaction gas and preventing impurity particles from causing adverse effects on the interior of the reaction tube 2.

[0053] When the reaction gas enters the reaction tube 2 , the reaction gas input system feeds back data to the control system, and the control system realizes thin film deposition on the wafer through the cooperation of the magnetic control 21 , the target material 22 and the base 23 .

[0054] After the thin film on the front side of the wafer is deposited, the staff removes the cover plate 201. Then, the driving motor 5 drives the telescopic electric cylinder 53 and the suction cup 54 (the suction cup 54 on the rotating plate 52) to be located directly above the wafer through the rotating plate 52. The telescopic electric cylinder 53 drives the suction cup 54 on the rotating plate 52 to adsorb the wafer and drive it to move upward. Then, the driving motor 5 drives the wafer to move to the suction cups 54 on the two groups of carrier plates 61 through the rotating plate 52, the telescopic electric cylinder 53 and the suction cup 54. The wafer is adsorbed and positioned by the cooperation of the suction cups 54 on the carrier plates 61 and the negative pressure pump. Then, the control system cooperates the suction cup 54 on the telescopic electric cylinder 53 (the suction cup 54 on the rotating plate 52) and the negative pressure pump to release the wafer.

[0055] After the wafer is sucked and positioned by the suction cup 54 on the carrier plate 61, the negative pressure pump feeds back data to the control system, and the control system controls the rotating motor 62 to drive the carrier plate 61 to flip, and the carrier plate 61 drives the wafer to flip so that the back side of the wafer faces upward to facilitate thin film deposition on the back side. After that, the driving motor 5 drives the telescopic electric cylinder 53 and its suction cup 54 to move to the top of the wafer through the rotating plate 52, and the telescopic electric cylinder 53 drives the suction cup 54 on the rotating plate 52 to move downward to suck and position the back side of the wafer, and the carrier plate 61 drives the wafer to flip so that the back side of the wafer faces upward to facilitate thin film deposition on the back side. 1 and the negative pressure pump cooperate to release the wafer, the telescopic electric cylinder 53 continues to drive the wafer downward through the suction cup 54 on the rotating plate 52, the driving motor 5 drives the wafer away from the carrier plate 61 through the rotating plate 52, the telescopic electric cylinder 53, and the suction cup 54 (the suction cup 54 on the rotating plate 52), and then the telescopic electric cylinder 53 drives the wafer upward through the suction cup 54 on the rotating plate 52, and the driving motor 5 and the telescopic electric cylinder 53 cooperate to place the wafer on the base 23, and perform thin film deposition again.

[0056] It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above and that the invention can be implemented in other specific forms without departing from the spirit or essential features of the invention. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations falling within the meaning and scope of the equivalent elements of the claims be included in the invention. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.

Claims

1. A horizontal magnetron sputtering thin film deposition device for reducing wafer surface damage, comprising a reaction gas input system, a vacuum system and a control system, characterized in that: The invention comprises a frame (11), wherein a reaction cylinder (2) and a filter cylinder (3) are sequentially arranged in the frame (11), an air inlet (301) and an air outlet (302) are arranged on the filter cylinder (3), the air inlet (301) and the air outlet (302) are respectively connected to a reaction gas input system and an upper end of the reaction cylinder (2) through pipelines, the reaction cylinder (2) is connected to a vacuum system through pipelines, a magnetic control unit (21) is installed on the upper side of the reaction cylinder (2), a target material (22) is installed below the magnetic control unit (21), a base (23) is installed below the target material (22), a support shaft (231) is arranged on the lower side of the base (23), and a detection cylinder (4) is sleeved on the outer side of the support shaft (231); The base (23) is used for preheating and carrying wafers, the vacuum system forms a vacuum inside the reaction tube (2), the reaction gas input system transports the reaction gas into the reaction tube (2), the reaction gas input system, the vacuum system, the magnetic control unit (21) and the target material (22) cooperate to achieve thin film deposition on the wafer, and the detection tube (4) detects and adjusts the position of the base (23); The detection cylinder (4) is arranged on the reaction cylinder (2), a sleeve (41) is sleeved inside the detection cylinder (4), a partition is arranged on the upper side of the sleeve (41), an elastic sealing ring is arranged in the middle of the partition, a plurality of groups of fixed balls (42) are arranged on the sleeve (41) below the partition, a sliding shaft (421) is arranged on the plurality of groups of fixed balls (42) on the side away from the sleeve (41), a sliding cylinder (432) and a sliding ball (43) are slidably mounted on the sliding shaft (421) in sequence, the sliding cylinder (432) is arranged on the sliding ball (43), a reset tension spring is connected between the fixed ball (42) and the sliding ball (43), the reset tension spring is sleeved on the sliding shaft (421) and the sliding cylinder (432), a sealing plate is arranged at one end of the sliding cylinder (432), and a metal ring (431) is arranged at the other end of the sliding cylinder (432); A coil A (451) is embedded in the sliding shaft (421). The coil A (451) is located inside the sliding cylinder (432) and is in sliding contact with the metal ring (431). Both the metal ring (431) and the coil A (451) are electrically connected to a control system. A pressure sensor is provided on the sliding ball (43), and the pressure sensor is electrically connected to the control system.

2. The horizontal magnetron sputtering thin film deposition device for reducing wafer surface damage according to claim 1, characterized in that: A telescopic cylinder A (44) and a telescopic cylinder B (441) are connected between the fixed ball (42) and the sliding ball (43); the telescopic cylinder A (44) is located outside the return tension spring, and the telescopic cylinder B (441) is located outside the telescopic cylinder A (44); the telescopic cylinder A (44) and the telescopic cylinder B (441) are telescopic structures; A heat-conducting medium is arranged between the outer side of the sliding shaft (421), the outer side of the sliding cylinder (432) and the inner wall of the telescopic cylinder A (44); the heat-conducting medium is made of a material that expands when heated; a heating wire and a temperature sensor are arranged on the inner wall of the telescopic cylinder A (44) in sequence; the heating wire is in contact with the heat-conducting medium, and the heating wire is electrically connected to a control system.

3. The horizontal magnetron sputtering thin film deposition device for reducing wafer surface damage according to claim 2, characterized in that: The telescopic cylinder B (441) is provided with a filling port (442) and an exhaust port (443) in sequence, a shaping chamber is formed between the outer side of the telescopic cylinder A (44) and the inner side of the telescopic cylinder B (441), a coil B (45) is buried in the telescopic cylinder B (441), the coil B (45) is electrically connected to a control system, the filling port (442) passes through a pipeline through the detection cylinder (4) and the reaction cylinder (2) and is connected to a filling system, the filling system is installed on the frame (11), and solenoid valves are installed in both the filling port (442) and the exhaust port (443), the solenoid valves are electrically connected to the control system.

4. The horizontal magnetron sputtering thin film deposition device for reducing wafer surface damage according to claim 3, characterized in that: The filter cartridge (3) is arranged on the frame (11); the interior of the filter cartridge (3) is hollow; the air inlet (301) and the air outlet (302) are located on both sides of the filter cartridge (3); a spiral tube (31) is arranged inside the filter cartridge (3); a spiral filter screen (32) is sleeved inside the spiral tube (31); the spiral tube (31) and the spiral filter screen (32) are both made of spirals; a bracket (31) is arranged in the middle of the spiral tube (31) near the air inlet (301). 1), a discharge plate (312) is arranged on the inner wall of the spiral tube (31) near the air outlet (302), a plurality of support plates (313) are arranged on the inner wall of the spiral tube (31), the cross section of the spiral filter screen (32) is cylindrical, one end of the spiral filter screen (32) is arranged on the bracket (311), the middle part of the spiral filter screen (32) is respectively arranged on the plurality of support plates (313), and the other end of the spiral filter screen (32) is arranged on the discharge plate (312); The air inlet (301) is connected to one end of the spiral tube (31), the air outlet (302) passes through the middle of the discharge plate (312) and is connected to the inside of the spiral filter screen (32), the discharge plate (312) passes through the filter cartridge (3) through a pipeline and is connected to the external air, and another set of solenoid valves are installed in the pipeline connected to the discharge plate (312), the air inlet (301) and the air outlet (302), and the other set of solenoid valves is electrically connected to the control system.

5. The horizontal magnetron sputtering thin film deposition device for reducing wafer surface damage according to claim 4, characterized in that: A driving motor (5) is mounted on the frame (11) on one side of the reaction cylinder (2), the driving motor (5) being mounted on the frame (11), a material tray (51) being mounted on one side of the driving motor (5), the material tray (51) being arranged on the frame (11), a proximity switch being arranged on the material tray (51), the proximity switch being electrically connected to a control system, a rotating plate (52) being mounted on the output shaft of the driving motor (5), a plurality of telescopic electric cylinders (53) being mounted on the rotating plate (52), a suction cup (54) being mounted on the telescopic rod of the telescopic electric cylinder (53), the suction cup (54) being connected to a negative pressure pump via a pipeline, the negative pressure pump being mounted on the frame (11); A cover plate (201) is installed on the upper side of the reaction cylinder (2), and a sealed connection is formed between the cover plate (201) and the reaction cylinder (2).

6. The horizontal magnetron sputtering thin film deposition device for reducing wafer surface damage according to claim 5, characterized in that: Two groups of fixing frames (6) are arranged on the frame (11) on one side of the driving motor (5), and a loading plate (61) is rotatably mounted on both groups of the fixing frames (6), one end of the loading plate (61) passes through the fixing frame (6) and is connected to a rotating motor (62), and the rotating motor (62) is mounted on the frame (11); another group of suction cups (54) is mounted on the fixing frame (6), and the suction cups (54) on the fixing frame (6) are connected to a negative pressure pump through a pipeline; a plurality of resistors are arranged on the base (23), and the plurality of resistors are electrically connected to a control system.

7. The horizontal magnetron sputtering thin film deposition device for reducing wafer surface damage according to claim 6, characterized in that: The reaction tube (2) is arranged on the frame (11), the interior of the reaction tube (2) is hollow, the magnetic control unit (21) and the target material (22) are electrically connected to the control system, the magnetic control unit (21) and the target material (22) are arranged on the reaction tube (2), and the base (23) is inserted into the detection tube (4) through the support shaft (231) and contacts with the sliding ball (43).

8. The horizontal magnetron sputtering thin film deposition device for reducing wafer surface damage according to claim 7, characterized in that: The filling system comprises a vacuum pump and a liquid storage tank, the vacuum pump and the liquid storage tank being mounted on a frame (11), the liquid storage tank storing magnetorheological fluid, the inlet of the vacuum pump being connected to the liquid storage tank via a pipeline, the outlet of the vacuum pump being connected to a filling port (442) via a pipeline passing through a reaction cylinder (2) and a detection cylinder (4), and another set of solenoid valves being mounted in the filling port (442) and the exhaust port (443).

9. The horizontal magnetron sputtering thin film deposition device for reducing wafer surface damage according to claim 8, characterized in that: A sliding door (12) is slidably provided on the frame (11), a control panel (1) is provided on the frame (11), and the control system is provided in the control panel (1).

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