Crystal furnace operation control method, device, equipment and medium

Abstract

The invention discloses a crystal furnace operation control method, device and equipment and a medium, and relates to the technical field of crystal production and manufacturing. The control method comprises the following steps: acquiring a first image in the crystal furnace; the first image is used for reflecting the seed crystal clamping state of the tail end of the seed crystal clamping device; when the seed crystal clamped by the seed crystal clamping device is in contact with the melt raw material, obtaining a first clamping force applied to the seed crystal by the seed crystal clamping device; whether the first clamping force is larger than a preset clamping threshold value or not is judged, if yes, the crystal growth type is obtained, a preset speed calibration database is called, and the rotation speed corresponding to the first clamping force and the crystal type is obtained; if not, a first prompt signal is sent out to prompt a user that the seed crystal has the falling risk. The method can effectively improve the quality of the crystal and improve the structure and growth rate of the crystal.

Description

Technical Field

[0001] The present disclosure generally relates to the field of crystal production and manufacturing technology, and specifically relates to a crystal furnace operation control method, device, equipment and medium. Background Art

[0002] The Czochralski (CZ) method is a Czochralski growth technique for growing single crystals, which is widely used in the semiconductor industry to produce silicon wafers and synthesize other types of crystals. The main principle of the CZ method is to immerse a small single crystal seed crystal into the molten raw material, and then slowly pull and rotate the seed crystal to gradually grow it into a large single crystal.

[0003] Since the pulling growth technology has unique process means, in order to ensure the quality and efficiency of crystal growth, various methods of monitoring and controlling its growth have emerged. For example, crystal growth is controlled by randomly or regularly observing the changes in crystal growth weight. However, in long-term crystal cultivation, whether the crystal growth equipment can operate normally and stably has also become a key control factor in the quality of crystal growth.

[0004] The seed crystal holder is a key component in the crystal growth equipment for fixing and operating the seed crystal. Its design needs to ensure that the seed crystal remains stable during the growth process to adapt to different growth conditions and requirements. However, the clamping force applied by the seed crystal holder to the seed crystal is affected by many factors in the complex cultivation process, which brings unknown risks to whether the seed crystal can rotate stably. This will undoubtedly have a significant impact on the quality, structure and growth rate of the crystal. For this reason, we propose a crystal furnace operation control method. Summary of the invention

[0005] In view of the above-mentioned defects or deficiencies in the prior art, it is desirable to provide a crystal furnace operation control method, device, equipment and medium.

[0006] In a first aspect, the present application provides, including:

[0007] Acquire a first image in the crystal furnace; the first image is used to reflect the state of the seed crystal being clamped by the end of the seed crystal clamp;

[0008] When the seed crystal clamped by the seed crystal clamper has come into contact with the melt raw material, obtaining a first clamping force applied by the seed crystal clamper to the seed crystal;

[0009] Determine whether the first clamping force is greater than a preset clamping threshold value, and if so, obtain the crystal growth type, and call a preset speed calibration database to obtain a rotation speed corresponding to the first clamping force and the crystal growth type;

[0010] If not, a first prompt signal is issued to prompt the user that the seed crystal is at risk of falling off;

[0011] The preset speed calibration database includes crystal growth types, and a clamping force range and a rotation speed corresponding to each of the crystal growth types.

[0012] According to the technical solution provided by the present application, before acquiring the first image in the crystal furnace, the method further includes:

[0013] The state information of the crystal furnace is obtained to determine whether the crystal furnace has entered a ready-to-run state, and if so, a first image in the crystal furnace is obtained.

[0014] According to the technical solution provided in the present application, obtaining the first clamping force applied by the seed crystal clamper to the seed crystal specifically includes:

[0015] Within a first preset time period, a plurality of clamping force values ​​are collected at intervals;

[0016] The first clamping force is calculated based on a plurality of clamping force values.

[0017] According to the technical solution provided by this application, the method also includes:

[0018] Continuously monitoring the real-time clamping force applied by the seed crystal clamp to the seed crystal;

[0019] Based on the correlation between the real-time clamping force and the preset speed calibration database, the rotation speed of the seed crystal clamp is adjusted.

[0020] According to the technical solution provided by the present application, the preset speed calibration database is calibrated through test conditions, specifically including:

[0021] Under the same test environment and the control of the preset rotation speed, recording the time it takes for the growth weight of the same type of crystal to reach the preset weight when different clamping forces are applied to the seed crystal clamps of the plurality of groups;

[0022] According to the process requirements, for each type of crystal growth type, by changing its preset rotation speed, at least one corresponding standardized crystal is selected at each preset speed;

[0023] The standard clamping force and the preset rotation speed corresponding to all the standardized crystals are used as a benchmark to calculate the rotation speeds corresponding to different types of crystal growth types under different clamping forces, and then establish the preset speed calibration database.

[0024] According to the technical solution provided by the present application, if a corresponding plurality of standardized crystals are selected at each preset rotation speed;

[0025] The standard clamping force and the preset rotation speed corresponding to all the standardized crystals are used as a reference to calculate the rotation speed corresponding to different types of crystal growth types under different clamping forces, specifically including:

[0026] The clamping forces corresponding to all the standardized crystals of the same type constitute a clamping force range;

[0027] The rotation speeds corresponding to different types of crystal growth types under different clamping force ranges are calculated based on the middle value of the clamping force range and the preset rotation speed.

[0028] According to the technical solution provided by this application, the method also includes:

[0029] Obtaining a clamping force curve corresponding to the seed crystal clamp after a crystal growth process is completed;

[0030] Based on the real-time clamping force curve, the difference between the lowest point value of the real-time clamping force curve and the preset clamping threshold is determined. If the difference is less than the preset difference range, it indicates that the seed crystal clamper needs to be replaced.

[0031] In a second aspect, the present application proposes a crystal furnace operation control device, comprising: an acquisition module, the acquisition module is used to acquire a first image in the crystal furnace; the first image is used to reflect the state of the seed crystal clamped by the end of the seed crystal clamp;

[0032] The acquisition module is also used to acquire a first clamping force applied by the seed crystal holder to the seed crystal when the seed crystal held by the seed crystal holder has come into contact with the melt raw material;

[0033] A judgment module, the judgment module is used to judge whether the first clamping force is greater than a preset clamping threshold value, and if so, obtain the crystal growth type, and call a preset speed calibration database to obtain a rotation speed corresponding to the first clamping force and the crystal growth type;

[0034] If not, a first prompt signal is issued to prompt the user that the seed crystal is at risk of falling off;

[0035] The preset speed calibration database includes crystal growth types, and a clamping force range and a rotation speed corresponding to each of the crystal growth types.

[0036] In a third aspect, the present application provides a terminal device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the above-mentioned crystal furnace operation control method when executing the computer program.

[0037] In a fourth aspect, the present application provides a computer-readable storage medium, wherein the computer-readable storage medium has a computer program, and when the computer program is executed by a processor, the steps of the above-mentioned crystal furnace operation control method are implemented.

[0038] In summary, the technical solution specifically discloses a crystal furnace operation control method, device, equipment and medium. Among them, the control method includes: obtaining a first image in the crystal furnace; the first image of the device is used to reflect the state of the seed crystal clamped by the end of the seed crystal clamp; when the device seed crystal clamped by the device seed crystal clamp has contacted the molten raw material, the first clamping force applied by the device seed crystal clamp to the device seed crystal is obtained; it is determined whether the first clamping force of the device is greater than the preset clamping threshold value, if so, the crystal growth type is obtained, and the preset speed calibration database is called to obtain the rotation speed corresponding to the first clamping force of the device; if not, a first prompt signal is issued to prompt the user that the device seed crystal is at risk of falling off; wherein the preset speed calibration database of the device includes the crystal growth type, and the clamping force range and rotation speed corresponding to each device crystal growth type.

[0039] The clamping force applied by the seed crystal holder to the seed crystal is affected by many factors in the complex cultivation process, which will undoubtedly have a significant impact on the quality, structure and growth rate of the crystal. The present application starts with the clamping force applied by the seed crystal holder, obtains the magnitude of the first clamping force and the corresponding crystal growth type, and obtains the corresponding rotation speed, which plays a role in correcting the original rotation speed, thereby improving the quality, structure and growth rate of the crystal. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Other features, objects and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings:

[0041] Figure 1 The present invention is a flow chart of a crystal furnace operation control method.

[0042] Figure 2 It is a schematic diagram of the expansion of step S200 in a crystal furnace operation control method.

[0043] Figure 3 The figure is a schematic diagram of the structure of a crystal furnace operation control device.

[0044] Figure 4 The figure is a functional block diagram of a terminal device.

[0045] Numbers in the figure: 500, terminal device; 501, CPU; 502, ROM; 503, RAM; 504, bus; 505, I / O interface; 506, input part; 507, output part; 508, storage part; 509, communication part; 510, drive; 511, removable medium; 600, operation control device; 601, acquisition module; 602, judgment module; 603, monitoring module. DETAILED DESCRIPTION

[0046] The present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the relevant invention, rather than to limit the invention. It is also necessary to explain that, for ease of description, only the parts related to the invention are shown in the accompanying drawings.

[0047] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0048] Example 1

[0049] In order to make the technical solution of the embodiment of the present application clearer and easier to understand, the application background of the embodiment of the present application is introduced below.

[0050] The Czochralski (CZ) method is a Czochralski growth technique for growing single crystals, which is widely used in the semiconductor industry to produce silicon wafers and synthesize other types of crystals. The main principle of the CZ method is to immerse a small single crystal seed crystal into the molten raw material, and then slowly pull and rotate the seed crystal to gradually grow it into a large single crystal.

[0051] Specifically, it can be applied to the crystal growth process of silicon crystals, germanium crystals, III-V semiconductor crystals, sapphire and silicon carbide (SiC), without any special limitation.

[0052] The crystal growth system that the CZ method relies on includes: the core equipment - the crystal furnace, inside which is usually provided a graphite or ceramic crucible for containing molten raw materials, and a pulling mechanism that can be lifted and rotated; wherein, the pulling mechanism (Pulling Mechanism) includes a pulling rod (Pulling Rod) for hanging and pulling the crystal seed crystal, and a seed crystal clamp for clamping the seed crystal is formed at one end of the pulling rod extending into the crystal furnace; and the rotating device is used to rotate the pulling rod to ensure that the melt solidifies evenly around the seed crystal.

[0053] In addition, the crystal growth system will also include units such as heaters, cooling devices, atmosphere control devices, temperature control devices and observation devices; heaters are used to heat the crucible and melt the raw materials; cooling devices are used to control the temperature of the crucible to maintain a constant melt temperature; temperature control devices: including thermocouples and other temperature sensors for monitoring the temperature of the crucible and the melt; atmosphere control devices are used to control the atmosphere in the furnace, and usually inert gases such as argon are required to prevent oxidation and contamination; observation devices: including cameras and other optical equipment for real-time observation of the crystal growth process.

[0054] The CZ method can provide high-quality crystals without monitoring the process parameters of the entire crystal system (including but not limited to current power, thermal field resistance, current current and voltage, current weight, growth amount, pulling speed, seed crystal rod rotation state and speed, etc.). The crystals provided in the end have uniform crystal orientation and low defect density. These characteristics are crucial to ensure the performance of electronic devices. Therefore, when growing crystals, it is necessary to accurately control parameters such as temperature, pulling speed, rotation speed and melt composition to ensure the quality and size of the crystals.

[0055] Among them, the seed crystal holder is a key component in the crystal growth equipment for fixing and operating the seed crystal. Its design needs to ensure that the seed crystal remains stable during the growth process to adapt to different growth conditions and requirements. However, the clamping force applied by the seed crystal holder to the seed crystal is affected by many factors in the complex cultivation process, such as temperature changes, small air pressure fluctuations, material life, and mechanical vibrations or failures. These may affect the performance of the clamping element, thereby bringing unknown risks to whether the seed crystal can rotate stably, and this will undoubtedly have a significant impact on the quality, structure and growth rate of the crystal.

[0056] In view of this, based on the unpredictable risk that the clamping force applied by the seed crystal holder to the seed crystal has a certain degree of fluctuation risk, a crystal furnace operation control method is proposed, which can effectively improve the control of the quality, structure and growth rate of the crystal, please refer to Figure 1 The schematic flow chart of a crystal furnace operation control method provided in this embodiment includes:

[0057] S100, acquiring a first image in the crystal furnace; the first image is used to reflect the state of the seed crystal being clamped by the end of the seed crystal clamp;

[0058] S200, when the seed crystal clamped by the seed crystal clamper has come into contact with the molten raw material, obtaining a first clamping force applied by the seed crystal clamper to the seed crystal;

[0059] S300, determining whether the first clamping force is greater than a preset clamping threshold; if yes, executing S301; if no, executing S302;

[0060] S301. Obtain the crystal growth type, and call a preset speed calibration database to obtain the rotation speed corresponding to the first clamping force and the crystal type; wherein the preset speed calibration database includes the crystal growth type, and the clamping force range and rotation speed corresponding to each crystal growth type.

[0061] S302, issuing a first prompt signal to prompt a user that there is a risk of the seed crystal falling off;

[0062] Among them, the present application can determine when the first clamping force can be obtained through the first image, and then perform automated clamping force monitoring and judgment. At the same time, in the actual process, the initially clamped seed crystal may fluctuate in the process of gradually moving to the corresponding position, or the seed crystal holder may not fix the seed crystal at the beginning, causing the seed crystal to be unevenly stressed. In these cases, if the original set rotation speed is maintained, the contact time between the seed crystal and the molten raw material per unit time will inevitably be different, and the growth rate will also be affected. It cannot be ignored that in some extreme cases, for example, the clamping force fluctuates greatly, improper operation during clamping or equipment failure may occur, and there may even be a risk of seed crystal falling off, requiring immediate warning.

[0063] Accordingly, the method shown in the embodiment of the present application is applied to crystal furnace control development. Exemplarily, the method is executed by the coordinated cooperation of various devices in the crystal growth system, and its core execution component is the control device in the crystal growth system, which is used to perform actions such as judgment, processing and communication.

[0064] The following is based on the coordinated execution of various devices in the crystal growth system. The method includes: the image acquisition device in the observation device continuously obtains the first image in the crystal furnace, and analyzes the first image through the recognition module to obtain the state of the seed crystal clamped by the end of the seed crystal clamp at different times; when the recognition result output by the recognition module is that the seed crystal clamped by the clamp has contacted with the molten raw material, the first clamping force applied by the seed crystal clamp to the seed crystal can be obtained, and the control device can adjust the rotation speed of the lifting rod according to the size range of the first clamping force by calling the preset speed calibration database to ensure that the seed crystal will not have problems such as too long or too short contact time with the molten raw material, affecting the crystal quality, or abnormal growth rate.

[0065] In the face of some extreme situations, when the first clamping force obtained is less than the preset clamping threshold, it is necessary to promptly remind the user that the seed crystal is at risk of falling off. The clamp here can be obtained by the sensor set by the observation system. In order to meet the use in the crystal growth environment, the selection of the sensor also needs to refer to its anti-interference ability, high temperature resistance and sensing accuracy and other parameters. In order to ensure the accuracy of the sensor, periodic maintenance and inspection are also required, which will not be elaborated here.

[0066] In a preferred embodiment, before step S100, obtaining the first image in the crystal furnace, the method further includes:

[0067] Step 1: Obtain status information of the crystal furnace to determine whether the crystal furnace has entered a ready-to-run state. If yes, obtain a first image inside the crystal furnace.

[0068] Since this method enables the automatic detection function, it is also necessary to respond to the signal prompt of whether the crystal furnace has entered the operation preparation state before the first image acquisition stage in the crystal furnace is carried out, that is, the signal image is collected when the lifting rod drives the seed crystal clamp and the seed crystal on it to move; when the recognition module recognizes through analysis of the first image that the seed crystal clamped by the seed crystal clamp has contacted with the molten raw material, or recognizes that the seed crystal has reached the target position (depending on the growth interface on the seed crystal), the following clamping force collection steps can be executed.

[0069] In this way, the waste of configuration resources can be further saved, and further resource sharing can be achieved. For example, the observation system itself needs to observe the preliminary situation in the crystal furnace, so a variety of required information can be identified from the first image.

[0070] In a preferred embodiment, if Figure 2 As shown, step S200, obtaining a first clamping force applied by the seed crystal clamper to the seed crystal, specifically includes:

[0071] S201, collecting multiple clamping force values ​​at intervals within a first preset time period;

[0072] S202: Calculate the first clamping force based on the multiple clamping force values.

[0073] Combined with the above description, it is not difficult to find that the first clamping force applied by the seed crystal clamper to the seed crystal may be uneven or fluctuate. In order to solve these problems, in the confirmation stage of the first clamping force, it is necessary to collect multiple clamping force values ​​at intervals within a first preset time length, and calculate the average value based on the obtained multiple clamping force values, and use this as the final first clamping force value as the basis for selecting the rotation speed;

[0074] It should be explained that in the calculation process of the first clamping force, singular values ​​also need to be eliminated. The more accurate the first clamping force value is, the more accurate the rotation speed will be to a certain extent. The first preset time here can be set to 30s or 1min. Because too much time cannot be wasted, it is best not to set it too long. It can be set according to actual conditions.

[0075] In a preferred embodiment, the method further comprises:

[0076] Step A1, continuously monitoring the real-time clamping force applied by the seed crystal clamper to the seed crystal;

[0077] Step A2: adjusting the rotation speed of the seed crystal holder based on the correlation between the real-time clamping force and the preset speed calibration database.

[0078] The CZ method usually includes the action of pulling and rotating the seed crystal or the heavy growing crystal, so the monitoring of the clamping force is a continuous process. The real-time clamping force applied by the seed crystal clamp to the seed crystal also needs to be monitored and adjusted in real time.

[0079] Here, the real-time clamping force monitoring also includes a situation, that is, the early warning of the falling of the growing crystal. During the whole process, if the real-time clamping force is found to be abnormal or less than the preset clamping threshold, the user can be reminded to pay attention to the risk of crystal falling by issuing a first prompt signal.

[0080] It should be explained that the correlation between the real-time clamping force and the preset speed calibration database can also be simply understood as the selection of the rotation speed according to the current crystal growth type and the real-time clamping force.

[0081] In a preferred embodiment, the preset speed calibration database is calibrated by a test condition, specifically including:

[0082] Step B1, under the same test environment and the control of a preset rotation speed, recording the moment when the weight of the crystal growth of the same type of crystal growth type reaches a preset weight when different clamping forces are applied by multiple groups of seed crystal clamps;

[0083] Step B2, according to the process requirements, for each type of crystal growth type, by changing its preset rotation speed, select at least one corresponding standardized crystal at each preset speed;

[0084] Step B3, using the standard clamping force and preset rotation speed corresponding to all the standardized crystals as a reference, calculate the rotation speed corresponding to different types of crystal growth types under different clamping forces, and then establish the preset speed calibration database.

[0085] The establishment process and structure example of the preset speed calibration database are described below in conjunction with steps B1-B3. First, when the technicians find this problem, they start to calibrate the speed calibration database through test conditions.

[0086] The first step is to observe the growth of different types of crystals, such as silicon crystals, germanium crystals and sapphire; then the seed crystal types and corresponding growth conditions corresponding to these three crystal types will constitute the "crystal growth type" parameters in the preset speed calibration database; such a design, firstly, takes into account that different types of seed crystals may have different characteristics, such as the smoothness of the seed crystal surface or the difference in shape; secondly, for the same type of seed crystal, if the growth conditions are different, the corresponding clamping force fluctuations will also be different, so they need to be distinguished.

[0087] The second step is to conduct the following tests for each crystal growth type;

[0088] (1) Using the initial clamping force parameter as a distinction, multiple groups of experiments were conducted under the same crystal growth type; wherein the initial clamping force here refers to the first clamping force corresponding to when the seed crystal has contacted with the melt raw material;

[0089] (2) Based on different initial clamping forces, the same crystal growth type cultivation process is executed. During the process, all parameters (excluding rotation speed) need to be set consistently (temperature, vacuum degree, temperature gradient and other parameters) to eliminate the influence of variable factors on the experiment; it can be assumed that 5 groups of experiments are performed. In this process, human operations can be performed. For example, when the seed crystal is initially clamped, the clamping can be looser or tighter accordingly, so that several groups of experiments can have a certain span range to ensure the accuracy of subsequent data processing.

[0090] (4) When crystal cultivation begins, it is necessary to record the time taken for the crystal growth weight to reach the preset weight when different clamping forces are applied to multiple sets of seed crystal clamps. For details, please refer to the first test data table shown in Table 1 below, where F1-F5 correspond to different test clamping forces, and T1-T5 are the corresponding time. The crystal growth weight here is collected by the crystal growth system, which is one of the important parameters to ensure crystal quality and optimize growth.

[0091] It should be explained that one can also try to set multiple preset weight points in the cultivation process to obtain the growth time corresponding to the multiple preset weight points. This will be more conducive to improving the numerical value to a certain extent when excluding singular data.

[0092] Table 1 Example of the first test data table

[0093]

[0094] (5) After the crystal cultivation begins, the quality of the final crystals obtained from each group can be tested through conventional inspection and analysis, such as appearance analysis or optical inspection. Standardized crystals are obtained through inspection and analysis, and the corresponding initial clamping force is used as the standard clamping force. Finally, the standard clamping force and its corresponding rotation speed are used as a set of benchmark data. Next, it is necessary to repeat the test at a preset rotation speed to obtain multiple sets of data with different standard clamping forces and preset rotation speeds corresponding to the standard clamping forces.

[0095] Here is a brief explanation. If the benchmark data corresponding to the standardized crystal obtained under two different preset rotation speeds for a crystal growth type is (F1, V6) and (F5, V4), then we can obtain multiple sets of different standard clamping forces and preset rotation speed data corresponding to the standard clamping forces according to the linear relationship of this data. In fact, if we can collect multiple sets of benchmark data, the corresponding fitting accuracy will be higher.

[0096] (6) Data collection and corresponding processing can use mathematical calculation models or some data analysis software to derive correlation relationships based on multiple sets of benchmark data obtained under each crystal type, such as linear function relationships, to obtain derived data covering more different clamping forces and preset rotation speeds;

[0097] (7) Finally, the derived data obtained based on multiple sets of benchmark data and the corresponding crystal types are integrated to obtain the final preset speed calibration database. The specific structure can be seen in Table 2, where F1, F3, F4, F9 and F N All are clamping force, V2, V4, V8, V6, V5, V N are the corresponding rotation speeds.

[0098] Table 2 Example of the first preset speed calibration database

[0099]

[0100] It needs to be explained that the above test calibration process can be interspersed in the regular crystal growth process, and it is not necessary to carry out a comprehensive calibration in the early stage. It is a process of gradual accumulation and enrichment. Because conducting a large number of tests in a unified manner is also a very time-consuming and resource-intensive process, these data can be specifically collected and calibrated during the normal crystal growth process.

[0101] In a preferred embodiment, in step B2, if a corresponding plurality of standardized crystals are selected at each preset rotation speed;

[0102] Step B21, using the standard clamping force and the preset rotation speed corresponding to all the standardized crystals as a reference, calculating the rotation speed corresponding to different types of crystal growth types under different clamping forces, specifically including:

[0103] Step B22, the clamping forces corresponding to all the standardized crystals of the same type constitute a clamping force range;

[0104] Step B23, using the middle value of the clamping force range and the preset rotation speed as a reference, calculate the rotation speeds corresponding to different types of crystal growth types under different clamping force ranges.

[0105] The above steps B21-B23 propose another situation in the preset speed calibration database, that is, the situation that more than one standardized crystal is found in the process of selecting standardized crystals. In fact, this situation is quite common, because the influence of clamping force fluctuation is too much, so the span range of the initial clamping force is not strictly controllable, so it is possible that the quality of the standardized crystal obtained in the end is not much different, so here it is necessary to form a clamping force range with the clamping force corresponding to all standardized crystals under each crystal type, and the preset rotation speed corresponding to the clamping force range is consistent (based on the instructions issued by the rotating device, so the preset rotation speed is consistent); then in the subsequent data integration process, the average clamping force value or the middle value corresponding to the clamping force range can be used as a set of benchmark data with the preset rotation speed. Of course, each clamping force and the same preset rotation speed can also be directly used as benchmark data, and then in the data integration stage, the data with smaller differences can be adaptively merged to obtain the rotation speed corresponding to different clamping force ranges, as shown in Table 3 below.

[0106] It should be explained that the adaptive merging of data with smaller differences here is usually based on the preset rotation speed or can also refer to the recorded time (because the data analysis software can extend many related values ​​according to the functional relationship of the key points). If the difference in the preset rotation speed is very small, the motor in the rotating device cannot even respond accordingly when the control command is issued, then you can consider merging. If the difference in the time length recorded under different clamping forces is very small, you can also consider merging. This essentially reflects that the impact of the fluctuation of the clamping force in this range is not large.

[0107] Table 3 Example of the second preset speed calibration database

[0108]

[0109]

[0110] In a preferred embodiment, the method further comprises:

[0111] Step D1, obtaining a real-time clamping force curve corresponding to the seed crystal clamp after a crystal growth process is completed;

[0112] Step D2: Based on the real-time clamping force curve, determine the difference between the lowest point value of the real-time clamping force curve and the preset clamping threshold value. If the difference is less than the preset difference range, it indicates that the seed crystal clamper needs to be replaced.

[0113] Since the embodiment of the present application also has an early warning mode, namely, whether the first clamping force is greater than a preset clamping threshold, the performance of the seed crystal clamp is tested based on this situation and in combination with the collected data.

[0114] Specifically, after a crystal growth process is completed, the clamping force of the seed crystal holder at different times during the entire growth process is obtained to form a clamping force change curve. The difference between the lowest point value of the clamping force curve and the preset clamping threshold is used to determine whether the seed crystal holder needs to be replaced. The life reminder of the seed crystal holder can be in the form of a message box on the control interface.

[0115] Specifically, the reference difference is obtained by subtracting the clamping force value corresponding to the lowest point of the change curve from the preset clamping threshold. Based on the reference difference, it is judged whether the seed crystal clamp will be at risk in subsequent use. The preset difference range here can be 2N to 3N. This preset difference range can also be adjusted according to actual conditions and is not specifically limited here. At the same time, the preset clamping threshold can be 10N or 15N, and can be adaptively adjusted for different crystal growth processes.

[0116] Based on the above content, it can be seen that the present application proposes a crystal furnace operation control method, which includes: obtaining a first image inside the crystal furnace; the first image is used to reflect the state of the seed crystal clamped by the end of the seed crystal clamp; when the seed crystal clamped by the seed crystal clamp has contacted the molten raw material, obtaining the first clamping force applied by the seed crystal clamp to the seed crystal; judging whether the first clamping force is greater than a preset clamping threshold, if so, obtaining the crystal growth type, and calling the preset speed calibration database to obtain the rotation speed corresponding to the first clamping force; if not, issuing a first prompt signal to prompt the user that the seed crystal is at risk of falling off; wherein the preset speed calibration database includes the crystal growth type, and the clamping force range and rotation speed corresponding to each crystal type.

[0117] On the one hand, the method provides a seed crystal falling warning based on the clamping force value. When it is found that the first clamping force is less than the preset clamping threshold, a first prompt signal is issued, which can promptly prompt the user whether it is necessary to suspend adjustment to prevent subsequent seed crystal falling from adversely affecting the production plan.

[0118] Secondly, since the fluctuation of clamping force will affect the ability of seed crystal to overcome the resistance of molten raw material during rotation, if the rotating device is still driven at a fixed speed under different clamping force values, it will affect the contact time between seed crystal and molten raw material and the overall crystal growth rate. Therefore, the real-time first clamping force collected can be used to calibrate the database through the preset speed to obtain the corresponding rotation speed, which can also be regarded as a correction to the rotation speed.

[0119] Thirdly, the method also proposes a means of establishing a preset speed calibration database. The speed calibration database can be obtained by constructing key point data, which eliminates multiple test steps. At the same time, it can also be interspersed in the normal crystal production process, greatly saving resources and time costs.

[0120] Example 2

[0121] like Figure 3 As shown, based on the crystal furnace operation control method described in Example 1, this embodiment provides a crystal furnace operation control device, and the operation control device 600 includes:

[0122] An acquisition module 601, wherein the acquisition module 601 is used to acquire a first image in the crystal furnace; the first image is used to reflect the state of the seed crystal being clamped by the end of the seed crystal clamp;

[0123] The acquisition module 601 is also used to acquire a first clamping force applied by the seed crystal holder to the seed crystal when the seed crystal held by the seed crystal holder has come into contact with the melt raw material;

[0124] A judgment module 602 is used to judge whether the first clamping force is greater than a preset clamping threshold value. If yes, the crystal growth type is obtained, and a preset speed calibration database is called to obtain a rotation speed corresponding to the first clamping force and the crystal type; if no, a first prompt signal is issued to prompt the user that the seed crystal is at risk of falling off;

[0125] The preset speed calibration database includes crystal growth types, and a clamping force range and a rotation speed corresponding to each of the crystal types.

[0126] In some embodiments, the acquisition module 601 is further used to acquire the status information of the crystal furnace, determine whether the crystal furnace has entered the operation preparation state, and if so, acquire the first image inside the crystal furnace.

[0127] In some embodiments, the acquisition module 601 is further used to collect multiple clamping force values ​​at intervals within a first preset time period and calculate the first clamping force based on the multiple clamping force values.

[0128] In some embodiments, the control device 600 also includes a monitoring module 603, which is used to continuously monitor the real-time clamping force applied by the seed crystal holder to the seed crystal and adjust the rotation speed of the seed crystal holder based on the correlation between the real-time clamping force and the preset speed calibration database.

[0129] In some embodiments, the acquisition module 601 is also used to obtain the clamping force curve corresponding to the seed crystal clamp after a crystal growth process is completed, and based on the real-time clamping force curve, determine the difference between the lowest point value of the real-time clamping force curve and the preset clamping threshold. If the difference is less than the preset difference range, it indicates that the seed crystal clamp needs to be replaced.

[0130] Example 3

[0131] A terminal device comprises a memory, a processor and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of a crystal furnace operation control method as described in Example 1 when executing the computer program.

[0132] In this embodiment, if Figure 4As shown, terminal device 500 includes CPU (central processing unit) 501, which can perform various appropriate actions and processes according to the program stored in ROM (read-only memory) 502 or the program loaded from the storage part into RAM (random access memory) 503. In RAM503, various programs and data required for system operation are also stored. CPU501, ROM502 and RAM503 are connected to each other through bus 504. I / O (input / output) interface 505 is also connected to bus 504.

[0133] The following components are connected to the I / O interface 505: an input section 506 including a keyboard, a mouse, etc.; an output section 507 including a cathode ray tube (CRT), a liquid crystal display (LCD), etc., and a speaker, etc.; a storage section 508 including a hard disk, etc.; and a communication section 509 including a network interface card such as a LAN card, a modem, etc. The communication section 509 performs communication processing via a network such as the Internet. A drive is also connected to the I / O interface 505 as needed. A removable medium 511, such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, etc., is installed on the drive 510 as needed, so that a computer program read therefrom is installed into the storage section 508 as needed.

[0134] In particular, according to an embodiment of the present invention, the above reference process diagram Figure 1 The described process can be implemented as a computer software program. For example, embodiment 3 of the present invention includes a computer program product, which includes a computer program carried on a computer readable medium, and the computer program contains program code for executing the method shown in the flow chart. In such an embodiment, the computer program can be downloaded and installed from a network through a communication part, and / or installed from a removable medium. When the computer program is executed by a central processing unit (CPU) 501, the above-mentioned functions defined in the system of the present invention are executed.

[0135] It should be noted that the computer-readable medium shown in the present invention may be a computer-readable signal medium or a computer-readable storage medium or any combination of the above two. The computer-readable storage medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device or device, or any combination of the above. More specific examples of computer-readable storage media may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM) 503, a read-only memory (ROM) 502, an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In the present invention, a computer-readable storage medium may be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, device or device. In the present invention, a computer-readable signal medium may include a data signal propagated in a baseband or as part of a carrier wave, which carries a computer-readable program code. This propagated data signal may take a variety of forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination of the above. Computer-readable signal media may also be any computer-readable medium other than computer-readable storage media, which may send, propagate or transmit a program for use by or in conjunction with an instruction execution system, apparatus or device. The program code contained on the computer-readable medium may be transmitted using any appropriate medium, including but not limited to: wireless, wire, optical cable, RF, etc., or any suitable combination of the above.

[0136] The flow chart and block diagram in the accompanying drawings illustrate the possible architecture, function and operation of the system, method and computer program product according to various embodiments of the present invention. In this regard, each box in the flow chart or block diagram can represent a module, a program segment, or a part of a code, and the above-mentioned module, program segment, or a part of a code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram or flow chart, and the combination of the boxes in the block diagram or flow chart can be implemented with a dedicated hardware-based system that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.

[0137] The units involved in the embodiments of the present invention may be implemented by software or hardware, and the units described may also be arranged in a processor. The names of these units do not, in some cases, constitute limitations on the units themselves. The units or modules described may also be arranged in a processor, for example, they may be described as: a processor includes a first generation module, an acquisition module, a search module, a second generation module, and a merging module. The names of these units or modules do not, in some cases, constitute limitations on the units or modules themselves, for example, the acquisition module may also be described as "an acquisition module for acquiring multiple instances to be detected in the basic table."

[0138] Example 4

[0139] The present invention also provides a computer-readable medium, which may be included in the electronic device described in the above embodiment; or may exist independently without being assembled into the electronic device. The above computer-readable medium carries one or more programs, and when the above one or more programs are executed by an electronic device, the electronic device implements a crystal furnace operation control method as described in the above embodiment.

[0140] The above description is only a preferred embodiment of the present application and an explanation of the technical principles used. Those skilled in the art should understand that the scope of the invention involved in the present application is not limited to the technical solution formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept. For example, the above features are replaced with (but not limited to) technical features with similar functions disclosed in the present application.

Claims

1. A crystal furnace operation control method, characterized in that: include: Acquire a first image inside the crystal furnace; The first image is used to reflect the state of the seed crystal being clamped by the end of the seed crystal clamp; When the seed crystal clamped by the seed crystal clamper has come into contact with the melt raw material, obtaining a first clamping force applied by the seed crystal clamper to the seed crystal; Determine whether the first clamping force is greater than a preset clamping threshold value, and if so, obtain the crystal growth type, and call a preset speed calibration database to obtain a rotation speed corresponding to the first clamping force and the crystal type; If not, a first prompt signal is issued to prompt the user that the seed crystal is at risk of falling off; The preset speed calibration database includes crystal growth types, and a clamping force range and a rotation speed corresponding to each of the crystal growth types.

2. A crystal furnace operation control method according to claim 1, characterized in that: Before acquiring the first image inside the crystal furnace, it also includes: The state information of the crystal furnace is obtained to determine whether the crystal furnace has entered a ready-to-run state, and if so, a first image in the crystal furnace is obtained.

3. A crystal furnace operation control method according to claim 1, characterized in that: Acquiring a first clamping force applied by the seed crystal clamper to the seed crystal specifically includes: Within a first preset time period, a plurality of clamping force values ​​are collected at intervals; The first clamping force is calculated based on a plurality of clamping force values.

4. A crystal furnace operation control method according to claim 1, characterized in that: The method further includes: Continuously monitoring the real-time clamping force applied by the seed crystal clamp to the seed crystal; Based on the correlation between the real-time clamping force and the preset speed calibration database, the rotation speed of the seed crystal clamp is adjusted.

5. A crystal furnace operation control method according to claim 4, characterized in that: The preset speed calibration database is calibrated through test conditions, specifically including: Under the same test environment and the control of the preset rotation speed, recording the time it takes for the crystal growth weight of the same crystal growth type to reach the preset weight when different clamping forces are applied by multiple groups of the seed crystal clamps; According to the process requirements, for each type of crystal growth type, by changing its preset rotation speed, at least one corresponding standardized crystal is selected at each preset speed; The standard clamping force and the preset rotation speed corresponding to all the standardized crystals are used as a benchmark to calculate the rotation speeds corresponding to different types of crystal growth types under different clamping forces, and then establish the preset speed calibration database.

6. A crystal furnace operation control method according to claim 5, characterized in that: If a plurality of corresponding standardized crystals are selected at each preset rotation speed; The standard clamping force and the preset rotation speed corresponding to all the standardized crystals are used as a reference to calculate the rotation speed corresponding to different types of crystal growth types under different clamping forces, specifically including: The clamping forces corresponding to all the standardized crystals of the same type constitute a clamping force range; The middle value of the clamping force range and the preset rotation speed are used as references to calculate the rotation speeds corresponding to different types of crystal growth types under different clamping force ranges.

7. A crystal furnace operation control method according to claim 1, characterized in that: The method further includes: Obtaining a clamping force curve corresponding to the seed crystal clamp after a crystal growth process is completed; Based on the real-time clamping force curve, the difference between the lowest point value of the real-time clamping force curve and the preset clamping threshold is determined. If the difference is less than the preset difference range, it indicates that the seed crystal clamper needs to be replaced.

8. A crystal furnace operation control device, characterized in that: include: An acquisition module, the acquisition module is used to acquire a first image in the crystal furnace; the first image is used to reflect the state of the seed crystal being clamped by the end of the seed crystal clamp; The acquisition module is also used to acquire a first clamping force applied by the seed crystal holder to the seed crystal when the seed crystal held by the seed crystal holder has come into contact with the melt raw material; A judgment module, the judgment module is used to judge whether the first clamping force is greater than a preset clamping threshold value, and if so, obtain the crystal growth type, and call a preset speed calibration database to obtain a rotation speed corresponding to the first clamping force and the crystal growth type; If not, a first prompt signal is issued to prompt the user that the seed crystal is at risk of falling off; The preset speed calibration database includes crystal growth types, and a clamping force range and a rotation speed corresponding to each of the crystal growth types.

9. A terminal device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the computer program, the steps of the crystal furnace operation control method according to any one of claims 1 to 7 are implemented.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of a crystal furnace operation control method as described in any one of claims 1 to 7 are implemented.

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