Metasurface unit and metasurface system

Abstract

The invention provides a metasurface unit which comprises a radiation patch layer, the radiation patch layer comprises a radiation patch, a first mode switching module and a second mode switching module, the first mode switching module is located at the edge of the radiation patch, the second mode switching module is located in a slot in the radiation patch, and the first mode switching module is located at the edge of the radiation patch, and the second mode switching module is located in the slot in the radiation patch. The state of the first mode switching module and the state of the second mode switching module are mutually combined to form a multi-bit control state. The invention further provides a metasurface system.

Description

Technical Field

[0001] The present disclosure relates to the field of communications, and in particular, to a metasurface unit and a metasurface system. Background Art

[0002] Metasurfaces have been widely studied for their ability to efficiently and cost-effectively regulate electromagnetic waves in space. In particular, after metasurfaces are combined with adjustable devices to form reconfigurable metasurfaces, their flexibility has been greatly improved and can be applied to a variety of different scenarios. Therefore, various forms of reconfigurable metasurfaces have emerged in recent years, including high and low frequency, multi-bit and multi-polarization reconfigurable metasurfaces.

[0003] At present, the adjustable devices combined with metasurfaces mainly include separate state adjustable devices such as PIN tubes and continuous state adjustable devices such as varactors. PIN tubes have low loss and support high frequency bands, but they only have two states: on and off. Therefore, multiple PIN tubes are required when constructing multi-bit reconfigurable metasurfaces. The higher the number of bits, the more PIN tubes there are, which increases the loss. Compared with PIN tubes, varactors essentially have multi-bit characteristics, but their loss is larger, especially when realizing multi-bits, their control becomes complicated.

[0004] In addition, when transitioning from a single-polarization metasurface to a dual-polarization metasurface, there will be problems such as polarization crosstalk, AC / DC isolation, and surface waves, while when transitioning from single-bit to multi-bit, there will be problems such as increased loss, more control lines, and poor performance stability. Summary of the invention

[0005] The purpose of the present disclosure is to provide a metasurface unit and a metasurface system to achieve multi-bit dual-polarization spatial electromagnetic wave control.

[0006] According to a first embodiment of the present disclosure, a metasurface unit is provided, which includes a radiation patch layer, wherein the radiation patch layer includes a radiation patch, a first mode switching module and a second mode switching module, the first mode switching module is located at the edge of the radiation patch, the second mode switching module is located in a slot in the radiation patch, and wherein the state of the first mode switching module and the state of the second mode switching module are combined with each other to form a multi-bit control state.

[0007] According to a second embodiment of the present disclosure, a metasurface system is provided, which includes a plurality of metasurface units according to the first embodiment of the present disclosure.

[0008] According to the metasurface unit and metasurface system disclosed in the present invention, the working mode of the metasurface unit can be changed by controlling the state of the switching device, thereby changing the phase response of the metasurface unit to the electromagnetic field to achieve the regulation of spatial electromagnetic waves. According to the metasurface unit and metasurface system disclosed in the present invention, there is no need to introduce additional layers and structures outside the radiation patch, and multi-bit characteristics can be achieved while ensuring stable performance, and the loss of the metasurface unit will not deteriorate. According to the metasurface unit and metasurface system disclosed in the present invention, it can be applied to hot spot filling, dynamic signal transmission and beamforming of wireless networks to achieve multi-bit dual-polarization spatial electromagnetic wave regulation, and has broad application prospects in the field of spatial channel regulation. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the technical solution of the present disclosure, but do not constitute a limitation of the present disclosure. In the accompanying drawings:

[0010] Figure 1A is a perspective view showing a metasurface unit according to an embodiment of the present disclosure;

[0011] Figure 1B is a side view showing a metasurface unit according to an embodiment of the present disclosure;

[0012] Figure 2 is an exploded perspective view showing a metasurface unit according to an embodiment of the present disclosure;

[0013] Figure 3 is a top view showing a radiation patch layer in a metasurface unit according to an embodiment of the present disclosure;

[0014] Figure 4 is a top view showing a radiation formation in a metasurface unit according to an embodiment of the present disclosure;

[0015] Figure 5 and Figure 6 is a top view showing a filtering branch layer in a metasurface unit according to an embodiment of the present disclosure;

[0016] Figure 7 is a top view showing a control wiring layer in a metasurface unit according to an embodiment of the present disclosure;

[0017] Figure 8 is a logical topology diagram showing a metasurface unit according to an embodiment of the present disclosure;

[0018] Figures 9 to 16 is an equivalent circuit diagram showing a metasurface unit according to various embodiments of the present disclosure; and

[0019] Fig.17is a schematic diagram showing a metasurface system according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0020] In order to enable those skilled in the art to better understand the technical solutions of the present disclosure, the exemplary embodiments will be more fully described below with reference to the accompanying drawings, but the exemplary embodiments can be specifically implemented in different forms and should not be interpreted as being limited to the embodiments set forth herein. The purpose of providing these embodiments is to make the present disclosure thorough and complete, and to enable those skilled in the art to fully understand the scope of the present disclosure. It should be recognized that the accompanying drawings are only used to describe the embodiments of the present disclosure, and the sizes of the various elements or parts shown in the drawings are not drawn to actual scale.

[0021] As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0022] The terms used herein are only for the purpose of describing specific example embodiments and are not intended to limit the claimed subject matter. As used herein, the singular forms "a", "an", and "the" are intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that when the terms "include" and / or "including ..." are used in this specification, it is indicated that the features, wholes, steps, operations, elements, and / or components are present, but the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or groups thereof are not excluded.

[0023] It will be understood that, although the terms "first" and "second" etc. are used herein to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts are not limited by these terms. These terms are only used to distinguish an element, component, region, layer or part from another element, component, region, layer or part. Therefore, the first element, first component, first region, first layer or first part discussed below may be referred to as the second element, second component, second region, second layer or second part, without departing from the teaching disclosed herein. In addition, the first element, first component, first region, first layer or first part in one embodiment may be different from the first element, first component, first region, first layer or first part in another embodiment.

[0024] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the subject matter disclosed herein belongs. It will also be understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an idealized or overly formal manner unless such a definition is explicitly made herein.

[0025] It should also be understood that, unless otherwise clearly indicated in the context, the description of the features or aspects within each exemplary embodiment should generally be considered to be applicable to other similar features or aspects in other exemplary embodiments. In the absence of conflict, the various embodiments of the present disclosure and the various features in the various embodiments can be combined with each other.

[0026] A single-bit dual-polarization metasurface unit and a metasurface system are described in a Chinese patent application (application number: 202310074667.5). The disclosure of this application is hereby incorporated by reference in its entirety.

[0027] In order to further upgrade the single-bit dual-polarization metasurface to a multi-bit dual-polarization metasurface, according to the technical solution disclosed in the present invention, the working mode of the radiation patch is changed by adding a short-circuit point at the edge of the radiation patch and opening a groove in the middle of the radiation patch, thereby achieving different phase responses to the incident electromagnetic wave and achieving the purpose of controlling spatial beam synthesis.

[0028] The present invention discloses a multi-bit dual-polarization reconfigurable intelligent metasurface for applications such as blind spot filling and heat filling under wireless network coverage.

[0029] The embodiment of the present disclosure provides a metasurface unit, Figure 1A is a perspective view showing a metasurface unit according to an embodiment of the present disclosure, Figure 1B is a side view showing a metasurface unit according to an embodiment of the present disclosure, Figure 2 is an exploded perspective view showing a metasurface unit according to an embodiment of the present disclosure.

[0030] See also Figure 1A , Figure 1B and Figure 2 According to the embodiment of the present disclosure, the metasurface unit includes: a radiation patch layer 10, a radiation stratum 20, a filter branch layer 30, a first stratum 40, a control wiring layer 50 and a second stratum 60.

[0031] The radiation patch layer 10 includes a radiation patch 101 , a first mode switching module 110 and a second mode switching module 120 .

[0032] The radiation patch 101, the first mode switching module 110 and the second mode switching module 120 together constitute the radiation structure of the metasurface unit. By controlling the on and off of the adjustable device (e.g., the first switch 103 and the second switch 107) in the mode switching module, the working mode of the radiation structure can be adjusted, thereby adjusting the electromagnetic response of the radiation structure, that is, the state of the first mode switching module 110 and the state of the second mode switching module 120 can be combined to form a multi-bit control state. The radiation patch 101 can be in various forms such as a patch, a dipole, a slot, etc., which is not specifically limited in the present disclosure.

[0033] Figure 3 is a top view showing a radiation patch layer in a metasurface unit according to an embodiment of the present disclosure, Figure 4 is a top view showing a radiation formation in a metasurface unit according to an embodiment of the present disclosure.

[0034] See also Figure 2 , Figure 3 and Figure 4 The first mode switching module 110 includes a first branch 102 , a first switch 103 , a second branch 104 and a first control channel 201 .

[0035] like Figure 2 and Figure 3 As shown, the first branch 102 is connected to the side of the radiation patch 101, the second branch 104 is connected to the first control channel 201, and the first switch 103 is connected between the first branch 102 and the second branch 103. By changing the first control loop composed of the first control channel 201 and the third control channel 203 to be described later, the state of the first mode switching module 110 can be changed. According to the needs, the first control channel 201 can be selectively grounded or connected to the digital control interface of the back end, so that the mode switching of the metasurface unit can be achieved by controlling the short circuit and open circuit of the edge current of the radiation patch 101. The specific structure of the first switch 103 is not limited, and can be a PIN tube, a switch, a MEMS tube, a non-volatile device, etc.

[0036] See also Figure 3 The second mode switching module 120 includes a third branch 106 , a second switch 107 , a fourth branch 108 and a second control channel 202 .

[0037] like Figure 3As shown, a cross-shaped slot 109 is formed in the center of the radiation patch 101, and the second mode switching module 120 is located in the slot 109. The fourth branch 108 is connected to the radiation patch 101, the third branch 106 is connected to the second control channel 202, and the second switch 107 is connected between the third branch 106 and the fourth branch 108. By changing the second control loop composed of the second control channel 202 and the third control channel 203 to be described later, the state of the second mode switching module 120 can be changed. According to the requirements, the second control channel 202 can be selectively grounded or connected to the digital control interface of the back end, so that the path of the current on the radiation patch 101 can be changed by controlling the short circuit and open circuit of the current at the center of the radiation patch 101 to realize the mode switching of the metasurface unit. The specific structure of the second switch 107 is not limited, and can be a PIN tube, a switch, a MEMS tube, a non-volatile device, etc. The first mode switching module 110, the second mode switching module 120 and the slot 109 together constitute the mode adjustment structure of the metasurface unit. The shape of the slot 109 is not limited to the cross shape shown in the figure, but may include any shape such as an irregular polygon, a regular polygon, a circle, etc., which is not specifically limited in the present disclosure.

[0038] A second switch 107 is introduced at the slot 109 in the middle of the radiation patch 101, and the flow path of the current is changed by turning the second switch 107 on and off, thereby generating two modes; a first switch 103 is introduced at the edge of the radiation patch 101, and the current is in a maximum state and a minimum state by turning the first switch 103 on and off, thereby generating two modes. The multi-bit dual-polarization characteristics of the metasurface unit can be realized by reasonably fine-tuning these modes. In the following, the specific implementation of the multi-bit dual-polarization characteristics of the metasurface unit according to each embodiment of the present disclosure will be described in detail in conjunction with the accompanying drawings.

[0039] like Figure 2 and Figure 3 As shown, the radiation patch layer 10 also includes a microstrip frame 105, and a circle of conductive vias 205 is formed between the microstrip frame 105 and the radiation stratum 20 and the first stratum 40. The microstrip frame 105 and the conductive vias 205 together constitute the substrate back cavity surface wave suppression structure of the metasurface unit, and its main function is to suppress the surface waves in the metasurface array and improve the working angle. The radiation patch 101 is arranged as a whole in the cavity formed by the microstrip frame 105, the conductive vias 205 and the radiation stratum 20 to suppress the coupling between the metasurface units and improve the large-angle scanning performance.

[0040] like Figure 4As shown, a hole is formed in the radiation stratum 20, and the third control channel 203 and the fourth control channel 204 to be described later can pass through the hole in the radiation stratum 20, and the third control channel 203 can be connected to the radiation patch 101 to realize the dual-polarization characteristics of the metasurface unit.

[0041] Figure 5 and Figure 6 is a top view showing a filtering branch layer in a metasurface unit according to an embodiment of the present disclosure.

[0042] According to an embodiment of the present disclosure, the filter branch layer 30 includes a first filter branch layer and a second filter branch layer which are sequentially arranged. Figure 5 shows a top view of the first filter branch layer, and Figure 6 A top view of the second filter stub layer is shown.

[0043] like Figure 2 and Figure 5 As shown, the first filter branch layer includes two rectangular first filter branches 301 for isolating RF signals from DC signals (or digital signals) and reducing RF insertion loss. The two first filter branches 301 are connected to two third control channels 203 respectively.

[0044] like Figure 2 and Figure 6 As shown, the second filter branch layer includes two fan-shaped second filter branches 302 to further enhance the isolation capability between the RF signal and the DC signal (or digital signal). The two second filter branches 302 are connected to the two third control channels 203 respectively.

[0045] The first filter branch 301 and the second filter branch 302 can be used to reflect radio frequency waves of the same frequency band or radio frequency waves of different frequency bands. By setting multiple layers (for example, two layers) of filter branches, the reflection of radio frequency waves can be better realized to better achieve AC / DC isolation.

[0046] like Figure 2 , Figure 5 and Figure 6 As shown, in an embodiment of the present disclosure, the first filter branch 301 is arranged in a rectangular shape, and the second filter branch 302 is arranged in an arc shape, but the present disclosure is not limited to this, and the shapes of the first filter branch 301 and the second filter branch 302 can be other shapes, for example, polygons, etc. The difference in the shape and area of ​​the filter branches brings about the difference in the reflection frequency band, which can be adjusted as needed. In addition, although in an embodiment of the present disclosure, the filter branch layer 30 is implemented as a first filter branch layer and a second filter branch layer, the present disclosure is not limited to this, and the number of layers of the filter branch layer can be three or more layers.

[0047] like Figure 2 and Figure 6 As shown, two third control channels 203 connected to the radiation patch 101 are combined through a combining branch 303 to achieve dual-polarization co-control. The fourth control channel 204 is connected to the third control channel 203 through a control combining branch 304 (also called a "remote branch").

[0048] The first filter branch layer, the second filter branch layer, the remote branch 304 and the fourth control channel 204 together constitute the double-layer remote AC / DC isolation structure of the metasurface unit, which mainly plays the role of isolating AC and DC and reducing RF loss. In addition, the fourth control channel 204 can also assist the substrate back cavity surface wave suppression structure of the metasurface unit to suppress surface waves.

[0049] Figure 7 is a top view showing a control wiring layer in a metasurface unit according to an embodiment of the present disclosure.

[0050] like Figure 7 As shown, the fourth control channel 204 can be connected to the control structure (not shown in the figure) in the control wiring layer 50 through the connection branch 501 in the control wiring layer 50.

[0051] According to an embodiment of the present disclosure, the digital signal input from the control structure (not shown) in the control wiring layer 50 to the radiation patch 101 can enter the radiation patch 101 through the two third control channels 203 respectively; and the dual-polarized RF signal from the radiation patch 101 will be separated at the two third control channels 203, and respectively reflected to the radiation patch 101 by the two first filter branches 301 and the two second filter branches 302, thereby avoiding the mutual influence between the digital signal and the RF signal, and avoiding the RF signal from being conducted to the control structure and affecting the operation of the control structure. In this way, AC and DC isolation can be achieved, that is, isolation of digital signals and RF signals, and the problem of polarization crosstalk of the dual-polarized metasurface can be solved.

[0052] In addition, the control structure is connected to the two third control channels 203 through a fourth control channel 204 to extend the path from the control structure to the filter branch layer 30, thereby further reducing the remaining RF signal from the radiation patch 101 after passing through the filter branch layer 30 to reduce interference with the control structure.

[0053] In an embodiment of the present disclosure, the two third control channels 203 are connected to the control structure (not shown) in the control wiring layer 50 via the fourth control channel 204 after the two third control channels 203 are combined, so only one port can be set on the control structure, and two polarizations can be controlled by one port, so that the number of port settings can be reduced. However, the embodiments of the present disclosure are not limited to this. In other embodiments of the present disclosure, the fourth control channel 204 may not be set, and the two third control channels 203 may not be combined, but are respectively connected to the control structure in the control wiring layer 50.

[0054] Figure 8 is a logical topology diagram showing a super surface unit according to an embodiment of the present disclosure.

[0055] like Figure 8 As shown, in the metasurface unit according to the embodiment of the present disclosure, a control method in the form of total (control structure) - divided (two third control channels 203) - total (radiation patch 101) is adopted.

[0056] According to the embodiments of the present disclosure, Figure 2 As shown in FIG. 1 , the structure of the first stratum 40 is substantially the same as that of the radiation stratum 20, so it is not described in detail. Figure 2 It is clearly shown in the figure, so it will not be described in detail.

[0057] The first control channel 201, the second control channel 202, the third control channel 203, the fourth control channel 204, the combining branch 303 and the control combining branch 304 together constitute an integrated separation control structure of the super surface unit. In the following, how to realize the multi-bit characteristics of the super surface unit according to each embodiment of the present disclosure through the integrated separation control structure will be described in detail in conjunction with the accompanying drawings.

[0058] Figures 9 to 16 is an equivalent circuit diagram showing a metasurface unit according to various embodiments of the present disclosure.

[0059] See also Fig. 9 , the first switch 103 and the second switch 107 are in a reverse connection state, the first control channel 201 and the second control channel 202 can be commonly connected to the radiation formation 20, and the voltage of the radiation formation 20 is a first ground voltage greater than 0V.

[0060] In the context of this application, the term "reverse connection state" means that the connection directions of the first switch 103 and the second switch 107 connected to the radiation patch 101 are opposite. Fig. 9As shown, when the ground voltage at one end connected to the first switch 103 is higher than the voltage of the radiation patch 101 connected to the other end of the first switch 103, the first switch 103 is turned on, and when the ground voltage at one end connected to the second switch 107 is higher than the voltage of the radiation patch 101 connected to the other end of the second switch 107, the second switch 107 is turned off; on the contrary, when the ground voltage at one end connected to the first switch 103 is lower than the voltage of the radiation patch 101 connected to the other end of the first switch 103, the first switch 103 is turned off, and when the ground voltage at one end connected to the second switch 107 is lower than the voltage of the radiation patch 101 connected to the other end of the second switch 107, the second switch 107 is turned on. On the other hand, the term "same connection state" opposite to the term "reverse connection state" means that the connection directions of the first switch 103 and the second switch 107 connected to the radiation patch 101 are the same.

[0061] like Fig. 9 As shown, the first switch 103 and the second switch 107 are shown as diodes (e.g., PIN transistors). Assuming that the on-voltages of the first switch 103 and the second switch 107 are both 1.3V, the first ground voltage is 1.3V. The first control channel 201 and the third control channel 203 form a first control loop to control the state change of the first mode switching module 110; the second control channel 202 and the third control channel 203 form a second control loop to control the state change of the second mode switching module 120. The control structure in the control wiring layer 50 outputs three states of 0V, 2.6V and high impedance (i.e., floating) to the radiation patch 101 through the third control channel 203. When 0V is output, the voltage of the radiation patch 101 is 0V, the first switch 103 is turned on, and the second switch 107 is turned off, that is, the first control loop is turned on, and the second control loop is turned off, so it corresponds to the state of the metasurface unit 10; when 2.6V is output, the voltage of the radiation patch 101 is 2.6V, the first switch 103 is turned off, and the second switch 107 is turned on, that is, the first control loop is turned off, and the second control loop is turned on, so it corresponds to the state of the metasurface unit 01; when the high-impedance state is output (that is, the third control channel 203 is suspended), no loop can be formed between the first switch 103 and the second switch 107, and the first switch 103 and the second switch 107 are both turned off, that is, the first control loop and the second control loop are both turned off, so it corresponds to the state of the metasurface unit 00. The control structure outputs three states of 0V, 2.6V and high impedance, which can correspond to the three states of the surface unit 10, 01 and 00 respectively, and the phase difference of each state is 120°.

[0062] It should be recognized that Fig. 9 The connection directions of the first switch 103 and the second switch 107 shown in the figure can be reversed, as long as the first switch 103 and the second switch 107 are ensured to be in a reverse connection state.

[0063] It should also be recognized that for clarity, due to the symmetry of the radiating patch, Fig. 9 Only one polarization control principle is shown, that is, only one third control channel 203, one first switch 103 and two second switches 107 are shown. In the figures described later, only one polarization control principle is shown, which will not be described again.

[0064] See also Fig.10 , the first switch 103 and the second switch 107 are in reverse connection, and the first control channel 201 and the second control channel 202 are connected to different ground voltages. Fig.10 As shown, the first switch 103 is connected to a second ground voltage greater than 0V, and the first switch 107 is connected to a ground voltage of 0V.

[0065] like Fig.10 As shown, the first switch 103 and the second switch 107 are shown as diodes (e.g., PIN transistors). Assuming that the on-voltages of the first switch 103 and the second switch 107 are both 1.3V, the second ground voltage is 3.9V. The first control channel 201 and the third control channel 203 form a first control loop to control the state change of the first mode switching module 110; the second control channel 202 and the third control channel 203 form a second control loop to control the state change of the second mode switching module 120. The control structure in the control wiring layer 50 outputs three states of 0V, 3.9V and high impedance (i.e., floating) to the radiation patch 101 through the third control channel 203. When 0V is output, the voltage of the radiation patch 101 is 0V, the first switch 103 is turned on, and the second switch 107 is turned off, that is, the first control loop is turned on, and the second control loop is turned off, so it corresponds to the state of the metasurface unit 10; when 3.9V is output, the voltage of the radiation patch 101 is 3.9V, the first switch 103 is turned off, and the second switch 107 is turned on, that is, the first control loop is turned off, and the second control loop is turned on, so it corresponds to the state of the metasurface unit 01; when the high-impedance state is output (that is, the third control channel 203 is suspended), a loop is formed between the first switch 103 and the second switch 107, and the first switch 103 and the second switch 107 are both turned on, that is, the first control loop and the second control loop are both turned on, so it corresponds to the state of the metasurface unit 11. The control structure outputs three states of 0V, 3.9V and high impedance, which can correspond to the three states of the surface units 10, 01 and 11 respectively, and the phase difference of each state is 120°.

[0066] It should be recognized that Fig.10 The connection directions of the first switch 103 and the second switch 107 shown in the figure can be reversed, as long as the first switch 103 and the second switch 107 are ensured to be in a reverse connection state, and the connected ground voltage is adjusted accordingly.

[0067] according to Fig. 9 and Fig.10 The embodiment shown can realize the 1.5-bit feature of the super-surface unit, and only requires one control line (i.e., the third control channel 203 after combining) to realize the ability to regulate the phase of the super-surface unit, with low cost and low power consumption.

[0068] See also Fig.11 , the first switch 103 and the second switch 107 are in the same connection state, and the first control channel 201 and the second control channel 202 are respectively connected to two control ports in the control wiring layer 50 .

[0069] like Fig.11 As shown, the first switch 103 and the second switch 107 are connected to the radiation patch 101 in a co-connected manner. The first control channel 201 and the third control channel 203 form a first control loop to control the state change of the first mode switching module 110; the second control channel 202 and the third control channel 203 form a second control loop to control the state change of the second mode switching module 120. By respectively controlling the voltages connected to the first control channel 201, the second control channel 202 and the third control channel 203, it is possible to achieve that both the first switch 103 and the second switch 107 are disconnected, that is, both the first control loop and the second control loop are disconnected, thus corresponding to the state of the supersurface unit 00; it is possible to achieve that the first switch 103 is turned on while the second switch 107 is disconnected, that is, the first control loop is turned on and the second control loop is disconnected, thus corresponding to the state of the supersurface unit 10; it is possible to achieve that the first switch 103 is disconnected while the second switch 107 is turned on, that is, the first control loop is disconnected and the second control loop is turned on, thus corresponding to the state of the supersurface unit 01; and it is possible that both the first switch 103 and the second switch 107 are turned on, that is, both the first control loop and the second control loop are turned on, thus corresponding to the state of the supersurface unit 11.

[0070] See also Fig.12 , the first switch 103 and the second switch 107 are in a reverse connection state, and the first control channel 201 and the second control channel 202 are respectively connected to the ground voltage and the control port in the control wiring layer 50; or the first control channel 201 and the second control channel 202 are respectively connected to two control ports in the control wiring layer 50.

[0071] It should be recognized that Fig.12The figure shows the situation where the first control channel 201 and the second control channel 202 are respectively connected to two control ports in the control wiring layer 50, but it is also possible that one of the first control channel 201 and the second control channel 202 is connected to the ground voltage and the other of the first control channel 201 and the second control channel 202 is connected to the control port in the control wiring layer 50.

[0072] like Fig.12 As shown, the first switch 103 and the second switch 107 are connected to the radiation patch 101 in a reverse connection. The first control channel 201 and the third control channel 203 form a first control loop to control the state change of the first mode switching module 110; the second control channel 202 and the third control channel 203 form a second control loop to control the state change of the second mode switching module 120. By respectively controlling the voltages connected to the first control channel 201, the second control channel 202 and the third control channel 203, it is possible to achieve that both the first switch 103 and the second switch 107 are disconnected, that is, both the first control loop and the second control loop are disconnected, thus corresponding to the state of the supersurface unit 00; it is possible to achieve that the first switch 103 is turned on while the second switch 107 is disconnected, that is, the first control loop is turned on and the second control loop is disconnected, thus corresponding to the state of the supersurface unit 10; it is possible to achieve that the first switch 103 is disconnected while the second switch 107 is turned on, that is, the first control loop is disconnected and the second control loop is turned on, thus corresponding to the state of the supersurface unit 01; and it is possible that both the first switch 103 and the second switch 107 are turned on, that is, both the first control loop and the second control loop are turned on, thus corresponding to the state of the supersurface unit 11.

[0073] It should be recognized that Fig.11 and Fig.12 The switching directions of the first switch 103 and the second switch 107 shown in FIG. 1 can be reversed.

[0074] according to Fig.11 and Fig.12 The illustrated embodiment can realize the 2-bit feature of the super-standard plane unit, requires two (or more) control lines, has stronger control capability, and is suitable for application scenarios with higher performance requirements.

[0075] Figures 13 to 16 The embodiments shown correspond to Figures 9 to 12 The embodiment shown is different in that Figures 9 to 12 The two second switches 107 shown in FIG. Figures 13 to 16 is implemented as a second switch 107. Figure 3Any two adjacent second switches 107 among the four second switches 107 shown in the figure are replaced with conductive structures (eg, copper sheets), while the other two second switches 107 are retained. In other aspects, Figures 13 to 16 The embodiments shown are respectively Figures 9 to 12 The embodiments shown are the same or corresponding and will not be described in detail here.

[0076] According to the metasurface unit disclosed in the present invention, by controlling the state of the switch device or the adjustable device (for example, the first switch 103 and the second switch 107), the working mode of the metasurface unit can be changed, thereby changing the phase response of the metasurface unit to the electromagnetic field to achieve the regulation of spatial electromagnetic waves. According to the metasurface unit disclosed in the present invention, there is no need to introduce additional layers and structures outside the radiation patch, and the multi-bit characteristics can be achieved while ensuring stable performance, and the loss of the metasurface unit will not deteriorate. According to the metasurface unit disclosed in the present invention, it can be applied to hot spot compensation, dynamic signal transmission and beamforming of wireless networks, which is a key technology of 6G communication technology. According to the metasurface unit disclosed in the present invention, multi-bit dual-polarization spatial electromagnetic wave regulation can be achieved, which has broad application prospects in the field of spatial channel regulation.

[0077] Fig.17 is a schematic diagram showing a metasurface system according to an embodiment of the present disclosure.

[0078] An embodiment of the present disclosure also provides a metasurface system, comprising a plurality of metasurface units according to various embodiments of the present disclosure.

[0079] According to an embodiment of the present disclosure, the multiple super-surface units are arranged in a matrix, but the present disclosure is not limited to this. The specific arrangement of the multiple super-surface units can be set according to actual needs, and the present disclosure does not limit the number of the multiple super-surface units.

[0080] According to an embodiment of the present disclosure, the multiple metasurface units can work in an array manner, and the array can be controlled by a single or multiple field programmable gate arrays (FPGA), erasable programmable logic devices (EPLD), digital signal processors (DSP) and other logic chips.

[0081] According to the metasurface system disclosed in the present invention, by controlling the state of the switch device or adjustable device (for example, the first switch 103 and the second switch 107) of each metasurface unit, the working mode of the metasurface unit can be changed, thereby changing the phase response of the metasurface unit to the electromagnetic field to achieve the regulation of space electromagnetic waves. According to the metasurface system disclosed in the present invention, there is no need to introduce additional layers and structures outside the radiation patch of the metasurface unit, and the multi-bit characteristics can be achieved while ensuring stable performance, and the loss of the metasurface unit will not deteriorate. According to the metasurface system disclosed in the present invention, it can be applied to heat and blind spot compensation, dynamic signal transmission and beamforming of wireless networks, which is a key technology of 6G communication technology. According to the metasurface system disclosed in the present invention, multi-bit dual-polarization space electromagnetic wave regulation can be achieved, which has broad application prospects in the field of space channel regulation.

[0082] Example embodiments have been disclosed herein, and although specific terms are employed, they are used and should be interpreted only in a general illustrative sense and not for limiting purposes. In some instances, it will be apparent to those skilled in the art that, unless otherwise expressly noted, features, characteristics, and / or elements described in conjunction with a particular embodiment may be used alone or in combination with features, characteristics, and / or elements described in conjunction with other embodiments. Therefore, those skilled in the art will appreciate that various changes in form and detail may be made without departing from the scope of the present disclosure as set forth in the appended claims.

Claims

1. A metasurface unit, comprising a radiation patch layer, wherein: The radiation patch layer includes a radiation patch, a first mode switching module and a second mode switching module, wherein the first mode switching module is located at an edge of the radiation patch, and the second mode switching module is located in a slot in the radiation patch, and The state of the first mode switching module and the state of the second mode switching module are combined with each other to form a multi-bit control state.

2. The metasurface unit according to claim 1, wherein: The first mode switching module includes a first branch, a first switch, a second branch and a first control channel. The first branch is connected to a side of the radiation patch, the second branch is connected to the first control channel, and the first switch is connected between the first branch and the second branch.

3. The metasurface unit according to claim 2, wherein: The second mode switching module includes a third branch, a second switch, a fourth branch and a second control channel. The fourth branch is connected to the radiation patch, the third branch is connected to the second control channel, and the second switch is connected between the third branch and the fourth branch.

4. The metasurface unit according to claim 1 further comprises a radiation formation, wherein: The radiation patch layer further includes a microstrip frame, and a conductive through hole is formed between the microstrip frame and the radiation ground layer. The radiation patch is arranged as a whole in a cavity formed by the microstrip frame, the conductive through hole and the radiation stratum.

5. The metasurface unit according to claim 1 further comprises a filtering branch layer, wherein: The filter branch layer includes a first filter branch layer and a second filter branch layer which are arranged in sequence.

6. The supersurface unit according to claim 5 further includes a control wiring layer and two third control channels, the filter branch layer is arranged between the radiation patch layer and the control wiring layer, the radiation patch is connected to the control structure in the control wiring layer via the two third control channels, and the first filter branch layer and the second filter branch layer are connected to the two third control channels.

7. The metasurface unit according to claim 6, wherein: The first filter branch layer includes two first filter branches, and the second filter branch layer includes two second filter branches. The two first filter branches are respectively connected to the two third control channels, and the two second filter branches are respectively connected to the two third control channels.

8. The metasurface unit according to claim 7, wherein: The two third control channels are combined into one third control channel in the filter branch layer, and the combined third control channel is connected to a port of the control structure in the control wiring layer.

9. The metasurface unit according to claim 6 further includes a fourth control channel, wherein the radiation patch is connected to the fourth control channel in the filter branch layer via the two third control channels, and the fourth control channel is connected to a port of the control structure in the control wiring layer.

10. The super surface unit according to claim 3 further comprises a radiation formation, wherein: The first switch and the second switch are in a reverse connection state, the first control channel and the second control channel are commonly connected to the radiation ground layer, and the voltage of the radiation ground layer is a first ground voltage greater than 0V.

11. The metasurface unit according to claim 3, wherein: The first switch and the second switch are in a reverse connection state, one of the first control channel and the second control channel is connected to a ground voltage of 0V, and the other of the first control channel and the second control channel is connected to a second ground voltage greater than 0V.

12. The metasurface unit according to claim 3 further comprises a control wiring layer, wherein: The first switch and the second switch are in a common connection state, and the first control channel and the second control channel are respectively connected to two control ports in the control wiring layer.

13. The metasurface unit according to claim 3 further comprises a control wiring layer, wherein: The first switch and the second switch are in a reverse connection state, one of the first control channel and the second control channel is connected to a ground voltage, and the other of the first control channel and the second control channel is connected to a control port in the control wiring layer; or The first control channel and the second control channel are respectively connected to two control ports in the control wiring layer.

14. A metasurface unit, comprising a radiation patch layer, a radiation ground layer, a filter branch layer, a first ground layer, a control wiring layer and a second ground layer stacked in sequence, wherein: The radiation patch layer includes a radiation patch, a first mode switching module and a second mode switching module, wherein the first mode switching module is located at an edge of the radiation patch, and the second mode switching module is located in a slot in the radiation patch, and The state of the first mode switching module and the state of the second mode switching module are combined with each other to form a multi-bit control state.

15. A metasurface system, comprising a plurality of metasurface units according to any one of claims 1 to 14.

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