Novel semiconductor device and manufacturing method

Abstract

The novel semiconductor device comprises a diamond heat exchange layer, a buffer layer is arranged on the diamond heat exchange layer, an epitaxial layer is arranged on the buffer layer, a source electrode block, a grid electrode block and a drain electrode block are arranged on the side, opposite to the buffer layer, of the epitaxial layer, the grid electrode block is arranged between the source electrode block and the drain electrode block, and the drain electrode block is arranged between the source electrode block and the drain electrode block. The epitaxial layer comprises a channel layer, a barrier layer and a cap layer, the channel layer, the barrier layer and the cap layer are sequentially arranged in the direction from the position close to the buffer layer to the position away from the buffer layer, and the source electrode block, the grid electrode block and the drain electrode block all penetrate through the cap layer and are connected with the cap layer. And the distance of conducting heat generated in a device on the epitaxial layer to the diamond heat exchange layer is shortened, so that the overall heat dissipation performance and the chip performance are greatly improved.

Description

Technical Field

[0001] The present invention relates to the field of compound semiconductors and devices, and in particular to a novel semiconductor device and a manufacturing method thereof. Background Art

[0002] Devices based on compound semiconductors have developed rapidly in recent years and are increasingly widely used in lighting, optical communications, power semiconductor devices, and medium and high frequency wireless communications. Their main advantage is the wider bandgap. Compared with the bandgap width of silicon of 1.12eV, the bandgap widths of commonly used compound semiconductors are: gallium arsenide 1.43eV, indium phosphide 1.35eV, silicon carbide 3.25eV, gallium nitride 3.44eV, gallium oxide 4.8eV, diamond 5.5eV, aluminum nitride 6.2eV. Wide bandgap (bandgap width > 2.3eV) semiconductor materials have broad application prospects in the development of high-temperature, high-frequency, high-power microwave devices, radiation-resistant devices, ultraviolet detectors, short-wave light-emitting diodes, etc., and are urgently needed electronic devices in the fields of wireless communications, national defense, new energy, and autonomous driving.

[0003] Aluminum nitride material has the largest bandgap width and direct band gap among III-V compound semiconductors, and is an ultra-wide bandgap semiconductor material. With the advancement of technical fields such as aluminum nitride material growth and doping, aluminum nitride material with excellent properties such as high thermal conductivity, high resistivity, strong breakdown field, and small dielectric constant will be used in high-temperature, high-frequency and high-power semiconductor device fields. Summary of the invention

[0004] The purpose of the present invention is to provide a novel semiconductor device and a manufacturing method to improve the overall working efficiency in view of the above-mentioned problems and shortcomings.

[0005] The present invention solves at least one of the following technical problems:

[0006] (1) Aluminum nitride materials are difficult to dope;

[0007] (2) In high-power application scenarios, the existing technology has poor heat dissipation performance and cannot fully utilize the potential performance of the chip.

[0008] The objective of the present invention can be achieved through the following technical scheme: a novel semiconductor device comprises a diamond heat exchange layer, a buffer layer is arranged on the diamond heat exchange layer, an epitaxial layer is arranged on the buffer layer, a source block, a gate block and a drain block are respectively arranged on the side of the epitaxial layer facing away from the buffer layer, the gate block is arranged between the source block and the drain block, the epitaxial layer comprises a channel layer, a barrier layer and a cap layer, and the channel layer, the barrier layer and the cap layer are arranged in sequence from close to the buffer layer to away from it, and the source block, the gate block and the drain block all penetrate the cap layer and are connected to it.

[0009] As a further solution of the invention, a heat dissipation groove is opened on the buffer layer, and the heat dissipation groove penetrates the buffer layer. The bottom of the heat dissipation groove is located on the contact surface between the channel layer and the buffer layer. The diamond heat exchange layer grows from scratch on the side of the buffer layer away from the channel layer and on each surface of the heat dissipation groove. At this time, the thickness of the diamond heat exchange layer is 5-100um.

[0010] As a further solution of the invention, the diamond heat exchange layer is arranged under the buffer layer through a connecting medium.

[0011] A method for manufacturing a novel semiconductor device, the steps of the method are as follows:

[0012] Step 1: growing a buffer layer on a transfer substrate, wherein the material of the buffer layer includes but is not limited to aluminum nitride (AlN) or gallium nitride (GaN);

[0013] Step 2: fabricating an epitaxial layer on the buffer layer, firstly growing AlxGa(1-x)N on the buffer layer to form an aluminum gallium nitride layer, and using the aluminum gallium nitride layer as a channel layer of the epitaxial layer, and then growing AlN to form an aluminum nitride layer, and using the aluminum nitride layer as a barrier layer of the epitaxial layer;

[0014] Step 3: First, a source block and a drain block are made on the barrier layer, and then a gate block is made. Optionally, a cap layer is first formed on the barrier layer, and then a source block, a drain block and a gate block are made in sequence.

[0015] Step 4: prepare a transfer carrier and bonding glue, apply the bonding glue on the outer surface of the epitaxial layer, then mount the semiconductor device to be processed upside down on the transfer carrier so that the transfer substrate is vertically upward, and then peel off the transfer substrate;

[0016] Step 5: A heat dissipation groove is formed on the side of the buffer layer away from the channel layer by photolithography, dry etching, degumming and cleaning, and the bottom of the heat dissipation groove is located on the contact surface between the channel layer and the buffer layer, and the heat dissipation groove is located between the drain block and the gate block at the same time, and the width of the heat dissipation groove is at most the same as the spacing between the drain block and the gate block;

[0017] Step 6: Generate a diamond film on the side of the buffer layer away from the channel layer and on each surface of the heat dissipation groove by microwave plasma chemical vapor deposition (MPCVD) or plasma enhanced chemical vapor deposition (PECVD), and deposit the diamond film by introducing a mixed gas of methane (CH4) and hydrogen (H2) into the reaction chamber. During the deposition process, the concentration of CH4 in the mixed gas is between 1-2 vol%, the pressure of the mixed gas is 1-10 kPa, and the flow rate of the mixed gas is 50 sccm. The temperature of the substrate is 800-1000°C, thereby forming a diamond heat exchange layer and obtaining a product.

[0018] As a further scheme of the invention, in step one, aluminum nitride is used as a buffer layer. The sample is first heat treated with hydrogen at 1100-1200°C for 2-6 minutes, and then trimethylaluminum (TMAl) and ammonia (NH3) are used as aluminum source and nitrogen source respectively, and hydrogen is used as a carrier gas to grow 10-100nm aluminum nitride at 1000-1100°C as a buffer layer.

[0019] As a further scheme of the invention, in step 2, a metal organic compound chemical vapor deposition method is used to form a channel layer. During production, trimethylgallium (TMGa, C3H9Ga), trimethylaluminum (TMAl, C3H9Al) and ammonia (NH3) are used as gallium source, aluminum source and nitrogen source respectively, and hydrogen is used as a carrier gas. The thickness of the channel layer is 100-1000nm, and the aluminum component (X) is 0.1-0.9. The required components are obtained by adjusting the flow rate of the gas source, and the thickness and surface flatness of the channel layer after formation are adjusted by adjusting the temperature and pressure.

[0020] As a further solution of the invention, in step 2, a barrier layer is formed by metal organic compound chemical vapor deposition, trimethylaluminum (TMAl, C3H9Al) and ammonia (NH3) are used as aluminum source and nitrogen source respectively, hydrogen is used as carrier gas, and the thickness of the barrier layer is 3-30nm.

[0021] A method for manufacturing a novel semiconductor device, the steps of the method are as follows:

[0022] Step 1: growing a buffer layer on a transfer substrate;

[0023] Step 2: forming an epitaxial layer on the buffer layer, first growing a channel layer on the buffer layer, and then growing a barrier layer;

[0024] Step 3: Making a source block, a drain block and a gate block on the barrier layer;

[0025] Step 4: prepare a transfer carrier and bonding glue, apply the bonding glue on the outer surface of the epitaxial layer, then mount the semiconductor device to be processed upside down on the transfer carrier so that the transfer substrate is vertically upward, and then peel off the transfer substrate;

[0026] Step 5: prepare a diamond carrier and apply a connecting medium on the surface of the diamond carrier;

[0027] Step 6: Plasma activation treatment is performed on the side of the diamond carrier having the connecting medium and the surface of the buffer layer;

[0028] Step 7: Clean the diamond carrier and semiconductor device and dry them with nitrogen;

[0029] Step 8: contact and align the side of the diamond carrier with the connecting medium with the surface of the buffer layer, and then bond them;

[0030] Step nine: Implement the debonding process, eliminate the bonding glue, remove the transfer carrier, and obtain the product.

[0031] As a further solution of the invention, the thickness of the diamond heat exchange layer is 100-500um.

[0032] As a further embodiment of the invention, the connecting medium includes but is not limited to GaN, SiN, AlN, and SiC, and the thickness of the connecting medium is 5-100 nm.

[0033] Beneficial effects of the present invention:

[0034] (1) When making the barrier layer, a gas source of tri(cyanadienyl) scandium (chemical formula: C15H15Sc) is added to form a ScAlN film, thereby increasing the concentration of the two-dimensional electron gas formed at the heterojunction interface and further improving the performance of the semiconductor device;

[0035] (2) By setting up the heat dissipation grooves, the distance between the heat source and the diamond heat exchange layer is shortened, and the heat conduction from the semiconductor device area to the diamond substrate is enhanced, thereby greatly improving the overall heat dissipation performance and device performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to facilitate understanding by those skilled in the art, the present invention is further described below with reference to the accompanying drawings.

[0037] Figure 1 It is a front view of the overall structure of the semiconductor device according to the second embodiment of the present invention;

[0038] Figures 2 to 4 This is a schematic diagram of the process of Embodiment 1 of the present invention;

[0039] Figures 5 to 8 This is a schematic diagram of the process of Embodiment 2 of the present invention;

[0040] Figures 9 to 11 This is a schematic diagram of the process of Embodiment 3 of the present invention;

[0041] In the figure: 101, transfer substrate; 102, buffer layer; 103, epitaxial layer; 104, source block; 105, gate block; 106, drain block; 107, heat dissipation groove; 108, diamond heat exchange layer; 201, channel layer; 202, barrier layer; 203, cap layer; 301, transfer carrier; 302, bonding glue; 401, connecting medium; 501, two-dimensional electron gas. DETAILED DESCRIPTION

[0042] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined invention purpose, the specific implementation mode, structure, characteristics and effects of the present invention are described in detail below in combination with the accompanying drawings and preferred embodiments.

[0043] Embodiment 1:

[0044] See also Figure 1-4 As shown: A new type of semiconductor device, including a diamond heat exchange layer 108, a buffer layer 102 is arranged on the diamond heat exchange layer 108, an epitaxial layer 103 is arranged on the buffer layer 102, a source block 104, a gate block 105 and a drain block 106 are respectively arranged on the side of the epitaxial layer 103 facing away from the buffer layer 102, the gate block 105 is arranged between the source block 104 and the drain block 106, the epitaxial layer 103 includes a channel layer 201, a barrier layer 202 and a cap layer 203, and the channel layer 201, the barrier layer 202 and the cap layer 203 are arranged in sequence from close to the buffer layer 102 to away from it, and the source block 104, the gate block 105 and the drain block 106 all penetrate the cap layer 203 and are connected to it.

[0045] Specifically, the method for manufacturing the semiconductor device includes the following steps:

[0046] Step 1: growing a buffer layer 102 on the transfer substrate 101, wherein the material of the buffer layer 102 includes but is not limited to aluminum nitride (AlN) or gallium nitride (GaN);

[0047] Step 2: forming an epitaxial layer 103 on the buffer layer 102, firstly growing AlxGa(1-x)N on the buffer layer 102 to form an aluminum gallium nitride layer, and using the aluminum gallium nitride layer as the channel layer 201 of the epitaxial layer 103, then growing AlN to form an aluminum nitride layer, and using the aluminum nitride layer as the barrier layer 202 of the epitaxial layer 103;

[0048] Step 3: First, a source block 104 and a drain block 106 are fabricated on the barrier layer 202, and then a gate block 105 is fabricated. Optionally, a cap layer 203 is first formed on the barrier layer 202, and then the source block 104, the drain block 106 and the gate block 105 are fabricated in sequence.

[0049] Step 4: Peel off the transfer substrate 101 and install the diamond heat exchange layer 108 .

[0050] In step one, aluminum nitride is used as the buffer layer 102. First, the sample is heat treated with hydrogen at 1100-1200°C for 2-6 minutes. Then, trimethylaluminum (TMAl) and ammonia (NH3) are used as aluminum source and nitrogen source respectively, and hydrogen is used as a carrier gas to grow 10-100nm aluminum nitride as the buffer layer 102 at 1000-1100°C.

[0051] In step 2, a metal organic compound chemical vapor deposition method is used to form the channel layer 201. During production, trimethylgallium (TMGa, C3H9Ga), trimethylaluminum (TMAl, C3H9Al) and ammonia (NH3) are used as gallium source, aluminum source and nitrogen source, respectively, and hydrogen is used as a carrier gas. The thickness of the channel layer 201 is 100-1000nm, and the aluminum component (X) is 0.1-0.9. The required components are obtained by adjusting the flow rate of the gas source. For example, in order to obtain a higher aluminum component, the flow rate of the aluminum-containing gas source, such as TMAl (trimethylaluminum, C3H9Al), is increased. In order to obtain a higher gallium component, the flow rate of the gallium-containing gas source, such as TMGa (trimethylgallium, C3H9Ga), can be increased. By adjusting the temperature and pressure, the thickness and surface flatness of the channel layer 201 after formation are adjusted.

[0052] In step 2, a barrier layer 202 is formed by metal organic chemical vapor deposition, trimethylaluminum (TMAl, C3H9Al) and ammonia (NH3) are used as aluminum source and nitrogen source respectively, and hydrogen is used as carrier gas. The thickness of the barrier layer 202 is 3-30nm.

[0053] In step 3, the steps of making the source block 104 and the drain block 106 are as follows: coating, alignment, exposure, development, metal deposition, metal stripping, debonding, cleaning and annealing;

[0054] The materials of the source block 104 and the drain block 106 include Ti, Al, Ni, Pt, Au or others, which can be one metal or a combination of two to four metals. The present embodiment adopts four metal compositions, Ti, Al, Ti, Au, with thickness ranges of 2-25nm, 30-300nm, 20-100nm, 50-500nm, respectively. Optionally, the present embodiment adopts Ti 25nm, Al 50nm, Ti 100nm, Au250nm, with a total thickness of 450nm, a temperature between 900-1200°C, and is carried out in an argon or nitrogen environment for 30 seconds to 90 seconds to form an ohmic contact, thereby reducing resistance.

[0055] In step 3, the manufacturing steps of the gate block 105 are as follows: coating, alignment, exposure, development, metal deposition, metal stripping, debonding, cleaning and annealing;

[0056] The material of the gate block 105 includes Pt, Ni, Au, Ti or others, and can be a single metal or a combination of two to four metals. This embodiment uses two metal compositions, Pt / Au or Ni / Au, with thicknesses ranging from 10-50nm and 50-250nm, respectively.

[0057] In step three, the material of the cap layer 203 includes but is not limited to gallium nitride, silicon nitride or aluminum gallium nitride with an aluminum content lower than 0.2, and the thickness of the cap layer 203 is 2-30 nm.

[0058] The structure of the epitaxial layer 103 is an AlN / AlxGa(1-x)N heterostructure, wherein the barrier layer 202 is AlN, and its bandgap is 6.2 eV;

[0059] The bandgap of the channel layer 201 depends on the composition of aluminum and gallium: if the aluminum composition (x) is between 0.2 and 0.8, the bandgap of the channel layer 201 is between 3.96-5.64 eV.

[0060] Since the bandgap widths of the channel layer 201 and the barrier layer 202 are different, there is a band step difference between the bottom of the conduction bands of the two. The band step difference of the conduction band will cause the energy band at the bottom of the conduction band to bend. The energy band bending forms a two-dimensional potential well at the heterojunction interface. The two-dimensional potential well confines the electrons therein. These electrons can only move in two dimensions along a plane parallel to the heterojunction interface in the potential well, thus forming a two-dimensional electron gas 501.

[0061] In step 2, when making the barrier layer 202, a gas source of tri(cyanadienyl) scandium (chemical formula: C15H15Sc) is added to dope the AlN. The doping concentration can be 5-50%, or even higher, to form a ScAlN film, thereby increasing the concentration of the two-dimensional electron gas formed at the heterojunction interface, thereby improving the performance of the device.

[0062] Embodiment 2:

[0063] like Figure 1 and Figures 5 to 8 As shown, on the basis of embodiment one, a heat dissipation groove 107 is opened on the buffer layer 102, and the heat dissipation groove 107 penetrates the buffer layer 102. The bottom of the heat dissipation groove 107 is located on the contact surface between the channel layer 201 and the buffer layer 102. The diamond heat exchange layer 108 grows from scratch on the side of the buffer layer 102 away from the channel layer 201 and on each surface of the heat dissipation groove 107. At this time, the thickness of the diamond heat exchange layer 108 is 5-100um.

[0064] Specifically, the following steps are performed after step 3 of embodiment 1:

[0065] Step 4: prepare a transfer carrier 301 and a bonding adhesive 302, apply the bonding adhesive 302 on the outer surface of the epitaxial layer 103, then mount the semiconductor device to be processed upside down on the transfer carrier 301 so that the transfer substrate 101 is vertically upward, and then peel off the transfer substrate 101;

[0066] Step 5: A heat dissipation groove 107 is formed on the side of the buffer layer 102 away from the channel layer 201 by photolithography, dry etching, degumming, and cleaning, and the bottom of the heat dissipation groove 107 is located on the contact surface between the channel layer 201 and the buffer layer 102, and the heat dissipation groove 107 is located between the drain block 106 and the gate block 105, and the width of the heat dissipation groove 107 is consistent with the distance between the drain block 106 and the gate block 105;

[0067] Step 6: Generate a diamond film on the side of the buffer layer 102 away from the channel layer 201 and on each surface of the heat dissipation groove 107 by microwave plasma chemical vapor deposition (MPCVD) or plasma enhanced chemical vapor deposition (PECVD), and deposit the diamond film by introducing a mixed gas of methane (CH4) and hydrogen (H2) into the reaction chamber. During the deposition process, the concentration of CH4 in the mixed gas is between 1-2 vol%, the pressure of the mixed gas is 1-10 kPa, and the flow rate of the mixed gas is 50 sccm. The temperature of the substrate is 800-1000°C, thereby forming a diamond heat exchange layer 108 and obtaining a product.

[0068] Embodiment three:

[0069] like Figures 9 to 11 On the basis of Example 1, a diamond carrier is selected as the diamond heat exchange layer 108, and the diamond heat exchange layer 108 is arranged under the buffer layer 102 through a connecting medium 401. The thickness of the diamond heat exchange layer 108 is 100-500um. The connecting medium 401 includes but is not limited to GaN, SiN, AlN, and SiC. The thickness of the connecting medium 401 is 5-100nm.

[0070] Specifically, the following steps are performed after step 3 of embodiment 1:

[0071] Step 4: prepare a transfer carrier 301 and a bonding adhesive 302, apply the bonding adhesive 302 on the outer surface of the epitaxial layer 103, then mount the semiconductor device to be processed upside down on the transfer carrier 301 so that the transfer substrate 101 is vertically upward, and then peel off the transfer substrate 101;

[0072] Step 5: prepare a diamond carrier and apply a connecting medium 401 on the surface of the diamond carrier;

[0073] Step 6: Plasma activation treatment is performed on the side of the diamond carrier having the connecting medium 401 and the surface of the buffer layer 102;

[0074] Step 7: Clean the diamond carrier and semiconductor device and dry them with nitrogen;

[0075] Step 8: contact and align the surface of the buffer layer 102 with the side of the diamond carrier having the connecting medium 401, and then bond them;

[0076] Step nine: implement a debonding process, eliminate the bonding glue 302, remove the transfer carrier 301, and obtain the product.

[0077] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. Although the present invention has been disclosed as a preferred embodiment as above, it is not used to limit the present invention. Any technical personnel in this field can make some changes or modify the technical contents disclosed above into equivalent embodiments without departing from the scope of the technical solution of the present invention. However, any brief modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention are still within the scope of the technical solution of the present invention.

Claims

1. A novel semiconductor device, characterized in that: The invention comprises a diamond heat exchange layer (108), a buffer layer (102) is arranged on the diamond heat exchange layer (108), an epitaxial layer (103) is arranged on the buffer layer (102), a source block (104), a gate block (105) and a drain block (106) are respectively arranged on the side of the epitaxial layer (103) facing away from the buffer layer (102), the gate block (105) is arranged between the source block (104) and the drain block (106), the epitaxial layer (103) comprises a channel layer (201), a barrier layer (202) and a cap layer (203), and the channel layer (201), the barrier layer (202) and the cap layer (203) are arranged in sequence from close to the buffer layer (102) to away from it, and the source block (104), the gate block (105) and the drain block (106) all penetrate the cap layer (203) and are connected to it.

2. A novel semiconductor device according to claim 1, characterized in that: The buffer layer (102) is provided with a heat dissipation groove (107), the heat dissipation groove (107) penetrates the buffer layer (102), the groove bottom of the heat dissipation groove (107) is located on the contact surface between the channel layer (201) and the buffer layer (102), and the diamond heat exchange layer (108) is grown from scratch on a side of the buffer layer (102) away from the channel layer (201) and on each surface of the heat dissipation groove (107), and the thickness of the diamond heat exchange layer 108 is 5-100 um.

3. A novel semiconductor device according to claim 1, characterized in that: The diamond heat exchange layer (108) is arranged under the buffer layer (102) via a connecting medium (401).

4. A method for manufacturing a novel semiconductor device, based on the novel semiconductor device according to claim 2, characterized in that: The steps of this method are as follows: Step 1: growing a buffer layer (102) on a transfer substrate (101), wherein the material of the buffer layer (102) includes but is not limited to aluminum nitride (AlN) or gallium nitride (GaN); Step 2: fabricating an epitaxial layer (103) on the buffer layer (102), firstly growing AlxGa(1-x)N on the buffer layer (102) to form an aluminum gallium nitride layer, and using the aluminum gallium nitride layer as a channel layer (201) of the epitaxial layer (103), and then growing AlN to form an aluminum nitride layer, and using the aluminum nitride layer as a barrier layer (202) of the epitaxial layer (103); Step 3: First, a source block (104) and a drain block (106) are fabricated on the barrier layer (202), and then a gate block (105) is fabricated. Optionally, a cap layer (203) is first formed on the barrier layer (202), and then a source block (104), a drain block (106), and a gate block (105) are fabricated in sequence. Step 4: prepare a transfer carrier (301) and a bonding adhesive (302), apply the bonding adhesive (302) on the outer surface of the epitaxial layer (103), then mount the semiconductor device to be processed upside down on the transfer carrier (301) so that the transfer substrate (101) is vertically upward, and then peel off the transfer substrate (101); Step 5: a heat dissipation groove (107) is provided on the side of the buffer layer (102) away from the channel layer (201) by photolithography, dry etching, degumming and cleaning, and the bottom of the heat dissipation groove (107) is located on the contact surface between the channel layer (201) and the buffer layer (102), and the heat dissipation groove (107) is located between the drain block (106) and the gate block (105), and the width of the heat dissipation groove (107) is consistent with the distance between the drain block (106) and the gate block (105); Step 6: Generate a diamond film on the side of the buffer layer (102) away from the channel layer (201) and on each surface of the heat dissipation groove (107) by microwave plasma chemical vapor deposition (MPCVD) or plasma enhanced chemical vapor deposition (PECVD), introduce a mixed gas of methane (CH4) and hydrogen (H2) into the reaction chamber to deposit the diamond film, and during the deposition process, the concentration of CH4 in the mixed gas is between 1-2 vol%, the pressure of the mixed gas is 1-10 kPa, and the flow rate of the mixed gas is 50 sccm. The temperature of the substrate is 800-1000° C., thereby forming a diamond heat exchange layer (108) and obtaining a product.

5. The method for manufacturing a novel semiconductor device according to claim 4, characterized in that: In step 1, an aluminum nitride film is prepared as a buffer layer (102). First, the sample is heat treated with hydrogen at 1100-1200°C for 2-6 minutes, and then trimethylaluminum (TMAl) and ammonia (NH3) are used as aluminum source and nitrogen source respectively, and hydrogen is used as a carrier gas to grow 10-100nm aluminum nitride at 1000-1100°C as a buffer layer (102).

6. The method for manufacturing a novel semiconductor device according to claim 4, characterized in that: In step 2, a metal organic compound chemical vapor deposition method is used to form a channel layer (201). During production, trimethylgallium (TMGa, C3H9Ga), trimethylaluminum (TMAl, C3H9Al) and ammonia (NH3) are used as gallium source, aluminum source and nitrogen source respectively, and hydrogen is used as a carrier gas. The thickness of the channel layer (201) is 100-1000nm, and the aluminum component (X) is 0.1-0.

9. The required components are obtained by adjusting the flow rate of the gas source, and the thickness and surface flatness of the formed channel layer (201) are adjusted by adjusting the temperature and pressure.

7. The method for manufacturing a novel semiconductor device according to claim 4, characterized in that: In step 2, a barrier layer (202) is formed by metal organic chemical vapor deposition, trimethylaluminum (TMAl, C3H9Al) and ammonia (NH3) are used as aluminum source and nitrogen source respectively, and hydrogen is used as carrier gas. The thickness of the barrier layer 202 is 3-30nm.

8. A method for manufacturing a novel semiconductor device, based on the novel semiconductor device according to claim 3, characterized in that: The steps of this method are as follows: Step 1: growing a buffer layer (102) on a transfer substrate (101); Step 2: forming an epitaxial layer (103) on the buffer layer (102), firstly growing a channel layer (201) on the buffer layer (102), and then growing a barrier layer (202); Step 3: fabricating a source block (104), a drain block (106) and a gate block (105) on the barrier layer (202); Step 4: prepare a transfer carrier (301) and a bonding adhesive (302), apply the bonding adhesive (302) on the outer surface of the epitaxial layer (103), then mount the semiconductor device to be processed upside down on the transfer carrier (301) so that the transfer substrate (101) is vertically upward, and then peel off the transfer substrate (101); Step 5: prepare a diamond carrier and apply a connecting medium (401) on the surface of the diamond carrier; Step 6: Plasma activation treatment is performed on the side of the diamond carrier having the connecting medium (401) and the surface of the buffer layer (102); Step 7: Clean the diamond carrier and semiconductor device and dry them with nitrogen; Step 8: contact and align the surface of the diamond carrier with the connecting medium (401) and the surface of the buffer layer (102), and then bond them; Step nine: Implement a debonding process to eliminate the bonding glue (302), remove the transfer carrier (301), and obtain the product.

9. The method for manufacturing a novel semiconductor device according to claim 8, characterized in that: The thickness of the diamond heat exchange layer (108) is 100-500 um.

10. The method for manufacturing a novel semiconductor device according to claim 8, characterized in that: The connecting medium (401) includes but is not limited to GaN, SiN, AlN, and SiC, and the thickness of the connecting medium (401) is 5-100 nm.

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