Light detection device

Abstract

The invention provides a light detection device having a pixel array unit. Each of a plurality of pixels of the pixel array unit includes: a photoelectric conversion element that generates an electric signal according to received light; and a color filter (CF) formed on a light receiving surface of the photoelectric conversion element. The plurality of pixels includes: a first pixel having a first CF for transmitting light of a first wavelength band; a second pixel adjacent to the first pixel and having a second CF for transmitting light of a second wavelength band; a third pixel adjacent to the first pixel and having a third CF for transmitting light of a third wavelength band, the peak wavelength of the third wavelength band being shorter than the peak wavelength of the second wavelength band; and a fourth pixel adjacent to the first pixel and having a fourth CF for transmitting light of a fourth wavelength band, the peak wavelength of the fourth wavelength band being shorter than the peak wavelength of the third wavelength band. The second pixel includes a first peripheral CF that is formed to surround an outer periphery of the second CF and transmits light of the third wavelength band.

Description

Technical Field

[0001] The present technology relates to a light detection device, and in particular, to a light detection device using color filters of multiple colors. Background Art

[0002] Light detection devices in which photoelectric conversion elements are arranged in an array and output electrical signals based on the accumulated charges according to the incident light are widely used in imaging devices such as cameras. The light detection device corresponding to a color image includes a color filter on the light receiving surface of each photoelectric conversion element, so that each photoelectric conversion element receives only light of any one color of red, green and blue (RGB). The structure in which such a photoelectric conversion element is included in the light detection device is called a "light receiving pixel" or simply a "pixel". In recent years, in order to improve high sensitivity and low illumination performance, a light detection device using a color filter including white (W) in addition to RGB has been provided.

[0003] In a light detection device using a color filter, in the case where light is obliquely incident on a light receiving surface, so-called color mixing (crosstalk) in which light passing through a color filter of an adjacent pixel enters a certain pixel is likely to occur. In particular, in a light detection device using a color filter having a four-color pixel array of RGBW, there is a problem that a pixel of a W color filter (W pixel) is easily affected by crosstalk, and the output characteristics of the W pixel are easily changed. Therefore, some techniques for suppressing changes in pixel output characteristics (sensitivity characteristics) have been proposed.

[0004] For example, the following patent document 1 discloses an image pickup device including a plurality of pixels having a color filter that scatters incident light and transmits incident light of a predetermined wavelength; and a photoelectric conversion unit that receives incident light transmitted through the color filter and generates signal charge. The image pickup device of patent document 1 includes a first pixel having a color filter having a first spectral characteristic, four second pixels having a color filter having a spectral characteristic similar to the first spectral characteristic and adjacent to the first pixel, and a partition wall disposed between each of the color filters of the first pixel and the second pixel and having a spectral characteristic different from the first spectral characteristic and the second spectral characteristic.

[0005] In addition, the following patent document 2 discloses a solid-state imaging element, which includes a W pixel as a specific pixel; at least one type of pixel among R pixels, G pixels and B pixels; and a shading film for physically shielding light between pixels, wherein the shading line width extends between the W pixel and an adjacent pixel adjacent to the W pixel in the pixel.

[0006] Citation list

[0007] Patent Literature

[0008] Patent Document 1: Japanese Patent Application Laid-Open No. 2020-150267

[0009] Patent Document 2: Japanese Patent Application Laid-Open No. 2016-096234 Summary of the invention

[0010] Problem that the invention aims to solve

[0011] However, in the case where there are multiple arrangement periods of pixels of other colors adjacent to the W pixel, there is a problem that the output of the W pixel itself is offset according to the number of arrangement periods, and an output step difference is generated. The imaging device disclosed in the above-mentioned patent document 1 can suppress the change of the output characteristic with respect to a specific pixel array, but there is a problem in that it is impossible to completely suppress the change of the color pixel array in which a step difference may occur in the output with respect to the W pixel.

[0012] Furthermore, the solid-state imaging element disclosed in Patent Document 2 can suppress output variation of the W pixel by forming a light shielding film having a large line width, but there is a problem that the output of the W pixel itself may decrease.

[0013] Therefore, the present invention proposes a technology capable of suppressing the variation in output characteristics of pixels due to crosstalk between pixels in a light detection device using a color filter.

[0014] More specifically, the present invention proposes a technology capable of suppressing crosstalk from adjacent pixel pairs W pixels in a light detection device using a color filter of a four-color pixel array, thereby effectively suppressing deviations in output characteristics and output step differences between W pixels.

[0015] Solutions to technical problems

[0016] The present technology for solving the above-mentioned problems includes the following matters specifying the present invention or technical features.

[0017] The present technology according to one aspect is a light detection device including a pixel array unit, in which a plurality of pixels are arranged in an array. Each of the plurality of pixels includes a photoelectric conversion element capable of generating an electrical signal corresponding to the received light; and a color filter, which is formed on a light receiving surface of the photoelectric conversion element receiving the light according to a predetermined color filter pattern and transmits light of a specific wavelength band in the light. In addition, the plurality of pixels include: a first pixel, which includes a first color filter that transmits light of a first wavelength band (e.g., white light); a second pixel, which is adjacent to the first pixel and includes a second color filter that transmits light of a second wavelength band (e.g., red light); a third pixel, which is adjacent to the first pixel and includes a third color filter that transmits light of a third wavelength band (e.g., green light), the peak wavelength of the third wavelength band being shorter than the peak wavelength of the second wavelength band; and a fourth pixel, which is adjacent to the first pixel and includes a fourth color filter that transmits light of a fourth wavelength band (e.g., blue light), the peak wavelength of the fourth wavelength band being shorter than the peak wavelength of the third wavelength band. In addition, the second pixel includes a first peripheral color filter formed to surround the second color filter and to transmit light of the third wavelength band.

[0018] Furthermore, the present technology according to another aspect is a light detection device, wherein the fourth pixel among the plurality of pixels includes a third peripheral color filter formed to surround the second color filter and to transmit light of the second wavelength band.

[0019] Furthermore, the present technology according to another aspect is a light detection device, wherein the second pixel among the plurality of pixels includes a fourth peripheral color filter formed to surround the second color filter and to transmit light of the second wavelength band.

[0020] Note that in this specification, etc., a device (means) refers not only to a physical device, but also includes a case where the function of a device is realized by software. In addition, the function of one device can be realized by two or more physical devices, or the functions of two or more devices can also be realized by one physical device. In addition, a "system" refers to a logical component of multiple devices (or functional modules that realize specific functions), and it is not important whether each device or each functional module is in a single housing.

[0021] Other technical features, purposes, effects or advantages of the present invention will be explained by the following embodiments described with reference to the accompanying drawings. The effects described herein are only examples, and the effects of this specification are not limited to these effects. Other effects can also be obtained. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1is an exploded perspective view for explaining a schematic structural example of a light detecting device according to a first embodiment of the present technology.

[0023] Figure 2 is a partial cross-sectional view showing a schematic structure of a pixel in a light detection device according to an embodiment of the present technology.

[0024] Figure 3 is a schematic diagram of an example of an RGBW pixel array in a conventional light detection device.

[0025] Figure 4 yes Figure 3 An enlarged view of a portion of an RGBW pixel array is shown.

[0026] Figure 5 is a graph showing the quantum efficiency (Qe) of each W pixel in an RGBW pixel array of a conventional light detection device.

[0027] Figure 6 1 is a partial plan view for explaining an example of a color arrangement configuration of peripheral color filters in an RGBW pixel array of a light detection device according to an embodiment of the present technology.

[0028] Figure 7 It is used to illustrate Figure 6 A partial cross-sectional view showing a schematic structure of a pixel in a cross section taken along line VII-VII' in the RGBW pixel array shown.

[0029] Figure 8 1 is a partial plan view for explaining another example of the color arrangement configuration of the peripheral color filters in the RGBW pixel array of the light detection device according to the embodiment of the present technology.

[0030] Fig. 9 1 is a partial plan view for explaining still another example of the color arrangement configuration of the peripheral color filters in the RGBW pixel array of the light detection device according to the embodiment of the present technology.

[0031] Fig.10 1 is a partial plan view for explaining still another example of the color arrangement configuration of the peripheral color filters in the RGBW pixel array of the light detection device according to the embodiment of the present technology.

[0032] Fig.11 : is a diagram for explaining an example of a method of forming a color filter in a manufacturing process of a light detecting device according to an embodiment of the present technology.

[0033] Fig.12 is a partial cross-sectional view showing a schematic structure of a pixel in a light detection device according to an embodiment of the present technology.

[0034] Fig.13 It is used to illustrate Fig.12 A partial plan view of a pixel shielding film in an RGBW pixel array is shown.

[0035] Fig.14 1 is a partial plan view for explaining an example of a color arrangement configuration of peripheral color filters in an RGBW pixel array of a light detection device according to an embodiment of the present technology.

[0036] Fig.15 1 is a partial plan view for explaining another example of the color arrangement configuration of the peripheral color filters in the RGBW pixel array of the light detection device according to the embodiment of the present technology.

[0037] Fig.16 1 is a partial plan view for explaining still another example of the color arrangement configuration of the peripheral color filters in the RGBW pixel array of the light detection device according to the embodiment of the present technology.

[0038] Fig.17 is a block diagram showing a schematic configuration example of a vehicle control system.

[0039] Fig.18 1 is an explanatory diagram showing an example of the installation positions of the vehicle exterior information detection unit and the imaging unit. DETAILED DESCRIPTION

[0040] Hereinafter, embodiments of the present technology will be described with reference to the accompanying drawings. However, the embodiments described below are only examples and are not intended to exclude the application of various modifications and technologies not explicitly described below. The present technology can be implemented within its scope through various modifications (for example, a combination of various embodiments, etc.). In addition, in the following description of the drawings, the same or similar parts are represented by the same or similar reference numerals. The drawings are merely schematic representations, and the dimensions and dimensional ratios therein are not necessarily consistent with the actual ones. Components with different dimensional relationships or ratios may be included in the drawings.

[0041] This section explains the following.

[0042] 1. First Implementation Method

[0043] 2. Second Implementation Method

[0044] 3. Third Implementation Plan

[0045] 4. Application examples for mobile objects

[0046] 5. Conclusion

[0047] <First embodiment>

[0048] Figure 11 is an exploded perspective view for explaining a schematic structural example of a light detection device according to an embodiment of the present technology. As shown in the figure, the light detection device 1 is an LSI chip in which a first semiconductor substrate 11 and a second semiconductor substrate 12 are stacked. The first semiconductor substrate 11 and the second semiconductor substrate 12 are joined by, for example, flip-chip mounting. As will be described later, the light detection device 1 can be applied to various products and can be used as a camera unit for capturing images.

[0049] The first semiconductor substrate 11 is, for example, a substrate on which a pixel array section 13 is formed, in which a plurality of light receiving elements constituting a pixel P are arranged in an array. Each light receiving element is a semiconductor element including a photoelectric conversion element such as a photodiode. A color filter 116 and an on-chip lens 117 are stacked and formed on the photoelectric conversion element to form a pixel P (refer to Figure 2 ). Light incident on each pixel P is converged by the on-chip lens 117, and light of wavelength bands other than a specific wavelength band is cut off by the color filter 116, and light that is not cut off reaches the photoelectric conversion element. The photoelectric conversion element generates a charge according to the intensity of the light received through the color filter 116, and outputs an electrical signal based on the generated charge. In the present invention, four types of color filters obtained by adding white (W) to three primary colors (red (R), green (G), and blue (B)) are used for the color filter 116, and are arranged and formed according to a predetermined color filter pattern.

[0050] The second semiconductor substrate 12 is a substrate on which various semiconductor integrated circuits 14 are formed. The semiconductor integrated circuit 14 includes, for example, a PLL circuit that generates a clock, a pixel control circuit that controls the operation of each pixel P, a drive circuit that drives a specific pixel P to read an electrical signal under the control of the pixel control circuit, a signal processing circuit that processes the read electrical signal, and an interface circuit for connecting to the outside, etc. For example, these circuits can be integrated into a system on chip (SoC) such as a CMOS LSI.

[0051] Note that in the present invention, the light detection device 1 has a two-layer stacked structure in which the first semiconductor substrate 11 and the second semiconductor substrate 12 are bonded, but is not limited thereto and may have a stacked structure of three or more layers. Alternatively, the light detection device 1 may have a structure in which the pixel array section 13 and the semiconductor integrated circuit 14 are juxtaposed on a single substrate.

[0052] Figure 2 is a partial cross-sectional view showing a schematic structure of a pixel P in the light detection device 1 according to an embodiment of the present technology. That is, Figure 2A part of the cross-sectional structure of the main part of the semiconductor substrate (LSI chip) in which the first semiconductor substrate 11 and the second semiconductor substrate 12 are bonded is shown. In the figure, the dot-dash line indicated by the reference numeral B indicates the bonding surface between the first semiconductor substrate 11 and the second semiconductor substrate 12. Note that in the present invention, the light detection device 1 is a back-illuminated CMOS image sensor, but is not limited thereto, and may be, for example, a front-illuminated CMOS image sensor.

[0053] As shown in the figure, the first semiconductor substrate 11 includes a Si semiconductor layer 111 of silicon single crystal and a wiring layer 112 stacked on the front surface (lower surface in the figure) of the Si semiconductor layer 111 .

[0054] The Si semiconductor layer 111 includes a semiconductor region 1111 constituting a light receiving element. The semiconductor region 1111 is a region where various semiconductor elements such as a photodiode and a transistor are formed, and is covered with a silicon oxide film 1112, for example.

[0055] The wiring layer 112 includes various wiring patterns 1121. The semiconductor element in the semiconductor region 1111 is electrically connected to the wiring pattern 1121 via a via. Generally, the wiring layer 112 can be constructed by stacking a plurality of wiring layers with an interlayer insulating film disposed therebetween. For example, the wiring pattern 1121 includes a metal material such as aluminum (Al) or copper (Cu), but is not limited thereto.

[0056] The light shielding film 113 is formed on the back side (upper surface in the figure) of the Si semiconductor layer 111. That is, the light shielding film 113 is formed with a predetermined width along the periphery of the semiconductor region 1111, and defines the opening (light receiving region) of the light receiving element. The light shielding film 113 is formed, for example, of tungsten or the like. The light shielding film 113 suppresses the entry of light from adjacent pixels P, thereby helping to reduce crosstalk (color mixing). As described in other embodiments, the width of the light shielding film 113 is appropriately defined according to the wavelength characteristics of the color filter 116 so as to more effectively reduce color mixing. Note that the Si semiconductor layer 111 may be provided with a pixel separation portion 114 formed in a groove shape along the periphery of the semiconductor region 1111. The pixel separation portion 114 also effectively reduces the occurrence of crosstalk in the Si semiconductor layer 111.

[0057] In addition, on the back side of the Si semiconductor layer 111, for example, a color filter 116 is formed through a planarization film 115, and an on-chip lens 117 is also formed on the color filter 116. The color filter 116 includes, for example, an organic material to which a predetermined color material (any one of RGBW) is added for each pixel P, and is formed by using, for example, a photolithography / etching technique. Hereinafter, in the case of a pixel P having a color filter 116 that transmits light of any one of the RGBW wavelength bands for various color distinctions, for example, each pixel P is described as an "R pixel" or a "pixel P (R)". Note that since the W pixel is a pixel P that receives light of all wavelength bands in the visible light, the color filter 116W of the W pixel may include a transparent material such as an on-chip lens 117. That is, a portion of the on-chip lens 117 formed directly on the planarization film 115 is regarded as a color filter 116W. The W pixel, the R pixel, the G pixel, and the B pixel correspond to the first pixel, the second pixel, the third pixel, and the fourth pixel in the claims, respectively.

[0058] In addition, in the present invention, in order to suppress the difference in output level between W pixels, for each pixel P of RGB, a peripheral color filter 118 that transmits other colors is formed to surround the periphery of the color filter 116 (see Figure 6 As an example, a green peripheral color filter 118G may be formed around the color filter 116R of the R pixel and the color filter 116B of the B pixel. As another example, a red peripheral color filter 118R may be formed around the color filter 116B of the B pixel. As yet another example, a blue peripheral color filter 118R may be formed around the color filter 116R of the R pixel.

[0059] The on-chip lens 117 is an optical lens configured to effectively gather light or form an image of light incident from the outside on a pixel P (i.e., a photoelectric conversion element of the semiconductor region 1111). For example, the on-chip lens 117 is formed so that the incident light is combined for each pixel P. Alternatively, the on-chip lens 117 may be shared by a plurality of adjacent pixels P constituting a pixel block. In other words, one on-chip lens 117 may be provided for each pixel block. A pixel block corresponds to a pixel unit representing the resolution of an image to be reproduced.

[0060] The second semiconductor substrate 12 includes a Si semiconductor layer 121 and a wiring layer 122 stacked on the Si semiconductor layer 121. In the Si semiconductor layer 121, for example, the above-described various semiconductor integrated circuits 14 are formed. The wiring layer 122 may also generally include a plurality of wiring layers stacked with interlayer insulating films interposed therebetween.

[0061] Here, a typical RGBW pixel array (color filter pattern) of the light detection device 1 will be described. Figure 3is a diagram showing an example of an RGBW pixel array of a conventional light detection device. More specifically, Figure 3 (a) shows an example of an RGBW pixel array in which W pixels are arranged based on the Bayer array, and Figure 3 (b) shows an example of an RGBW pixel array in which W pixels are arranged based on a quad Bayer array. Note that, for convenience, the peripheral color filter 118 is not shown in the figure.

[0062] As shown in these figures, in the light detection device 1 , an RGBW pixel array in which RGB pixels are arranged around W pixels is constructed so as to output an electric signal capable of faithfully reproducing an image of received light.

[0063] In such an RGBW pixel array, there are three array patterns of pixels of colors other than W adjacent to the periphery of the W pixel. Figure 3 In the RGBW pixel array shown in (a), the array pattern includes a first array pattern in which the pixel P adjacent to the pixel P(W1) (first W pixel) is two G pixels and two R pixels, a second array pattern in which the pixel P adjacent to the pixel P(W2) (second W pixel) is two G pixels, one R pixel and one B pixel, and a third array pattern in which the pixel P adjacent to the pixel P(W3) (third W pixel) is two G pixels and two B pixels.

[0064] In addition, in Figure 3 In the RGBW pixel array shown in (b), the array pattern includes a first array pattern in which the pixels P adjacent to the pixel P(W1') (first W pixel) are two G pixels and two R pixels, a second array pattern in which the pixels adjacent to the pixel P(W2') (second W pixel) are two G pixels, one R pixel and one B pixel, and a third array pattern in which the pixels adjacent to the pixel P(W3') (third W pixel) are two G pixels and two B pixels.

[0065] Moreover, in this RGBW pixel array, the amount of light entering the W pixel from pixels adjacent to the W pixel relative to the amount of light directly incident on the W pixel is different for each of the three array patterns, and the output level of the electrical signal taken out from the W pixel itself produces a step difference.

[0066] For example, when irradiated with light of wavelength λ=550nm, Figure 3 Consider the output level (quantum efficiency Qe) of the electrical signal taken out of each W pixel in the case of the pixel P of the light detection device of the RGBW pixel array shown in (a), and when the pixel P is irradiated with light of wavelength λ=650nm. Figure 3In the RGBW pixel array shown in (a), Figure 4 The pixel P in the 6×6 area shown in the figure has 8 W pixels P(W1) to P(W8) in the 6×6 area (abbreviated as "W1", "W2", etc. in the figure). Figure 5 is a graph showing the quantum efficiency Qe of each of the pixels P( W1 ) to P( W8 ).

[0067] like Figure 5 As shown in (a), by irradiation with light of wavelength λ=550nm, the quantum efficiency Qe of W pixels P(W5) and P(W7) having a high ratio of adjacent G pixels to B pixels is about 88.9% (which is the highest), and the quantum efficiency of W pixels P(W2) and P(W4) having a high ratio of adjacent R pixels to G pixels is about 86.8 (which is the lowest). In addition, the quantum efficiency Qe of W pixels P(W1), P(W3), P, P(W6) and P(W8) is about 87.8%, which is a value between the maximum value and the minimum value.

[0068] On the other hand, Figure 5 As shown in (b), by irradiation with light of wavelength λ=650nm, the quantum efficiency Qe of W pixels P(W2) and P(W4) having a high ratio of adjacent R pixels to G pixels is about 74.4% (which is the highest), and the quantum efficiency Qe of W pixels P(W5) and P(W7) having a high ratio of adjacent G pixels to B pixels is about 70.8% (which is the lowest). In addition, the quantum efficiency Qe of W pixels P(W1), P(W3), P(W6) and P(W8) is about 72.7%, which is a value between the maximum value and the minimum value.

[0069] As described above, it can be seen that the output level of each W pixel shows a different value under the influence of the wavelength of the incident light and the color of the adjacent pixel P. This difference in the output level (output step difference) between the W pixels appears as a periodic luminance step difference in the reproduced image and affects the image quality. Therefore, as described below, the light detection device 1 of the present invention is configured to eliminate this output step difference between the W pixels in the RGBW four-color pixel array using the peripheral color filter 118.

[0070] Figure 6 : is a partial plan view for explaining an example of a color arrangement configuration of a peripheral color filter in an RGBW pixel array of the light detection device 1 according to an embodiment of the present technology. Figure 7 It is used to illustrate Figure 6 FIG. 1 is a partial cross-sectional view of the schematic structure of a pixel P in the VII-VII' cross section of the RGBW pixel array shown in FIG. 1 . Note that, for ease of understanding, Figure 7 In a further simplified manner, Figure 2 The schematic structure of a pixel P is shown.

[0071] As shown in these figures, green peripheral color filters 118G1 and 118G2 are formed around the color filter 116R of the R pixel and the color filter 116B of the B pixel. Therefore, the arrangement period of the color filter around each W pixel is unified to green. The peripheral color filters 118G1 and 118G2 can be continuous with the color filter 116G of the adjacent G pixel.

[0072] In addition, in this example, the width of the peripheral color filter 118G1 around the R pixel is formed to be wider than the width of the peripheral color filter 118G2 around the B pixel (refer to Figure 7 ). That is, the width of the peripheral color filter 118 is formed wider for a pixel P that receives light of a longer wavelength. This is because, due to chromatic aberration, light with a longer wavelength has the characteristic of being less likely to be converged, and therefore, while suppressing color mixing between adjacent pixels P, degradation of sensitivity is suppressed. Therefore, as in this example, by forming the width of the peripheral color filter 118G1 around the R pixel to be wider than the width of the peripheral color filter 118G2 around the B pixel, degradation of the sensitivity of the B pixel can be suppressed while further suppressing color mixing from the R pixel to the W pixel. The peripheral color filters 118G1 and G2 correspond to the first peripheral color filter and the second peripheral color filter in the claims.

[0073] As described above, the output step difference between the first W pixel (i.e., a W pixel surrounded by 2 G pixels and 2 R pixels) and the second W pixel (i.e., a W pixel surrounded by 2 G pixels, 1 R pixel and 1 B pixel) in the RGBW pixel array and the output step difference between the second W pixel and the third W pixel (i.e., a W pixel surrounded by 2 G pixels and 2 B pixels) can be suppressed.

[0074] (Variation Example)

[0075] In the above example, the color filter color arrangement configuration in which the green peripheral color filter 118G is formed around the R pixel and the B pixel has been described. However, the present invention is not limited thereto, and various color arrangement configurations of the peripheral color filter 118 may be adopted for the color of the pixel P to suppress the output step difference of the W pixel.

[0076] Figure 81 is a partial plan view of another example of the color arrangement structure of the peripheral color filter in the RGBW pixel array of the light detection device 1 according to the embodiment of the present technology. As shown in the figure, the color arrangement structure of the peripheral color filter 118 of this example is formed by forming a red peripheral color filter 118R around the B pixel. Therefore, the arrangement period of the color filter 116 around the W pixel is unified to 2 green and 2 red. Therefore, the output step difference between the W pixels can be eliminated. Note that the peripheral color filter 118R corresponds to the third peripheral color filter in the claims.

[0077] Fig. 9 1 is a partial plan view of another example of the color arrangement structure of the peripheral color filter in the RGBW pixel array of the light detection device 1 according to the embodiment of the present technology. As shown in the figure, in the peripheral color filter 118 of this example, the blue peripheral color filter 118B is formed around the R pixel. Therefore, the arrangement period of the color filter 116 around the W pixel is unified to 2 green and 2 blue. Therefore, the output step difference between the W pixels can be eliminated. Note that the peripheral color filter 118B corresponds to the fourth peripheral color filter in the claims.

[0078] Fig.10 1 is a partial plan view for explaining another example of the color arrangement structure of the peripheral color filter in the RGBW pixel array of the light detection device 1 according to the embodiment of the present technology. Figure 6 The difference shown is that the peripheral color filter 118 is not formed in the portion C where the pixels P intersect each other at the corner. That is, the peripheral color filter 118 surrounding the pixel P is not necessarily formed continuously, and may also be partially missing (discontinuous).

[0079] In the process of forming the peripheral color filter 118, the portion where the pixels P intersect each other at the corners is likely to be formed into a circle, and the effective area of ​​the surrounding pixels P (i.e., W pixels) is likely to be reduced accordingly. Therefore, as in this example, the peripheral color filter 118 is formed to avoid the intersection C of the corners of the pixels P, thereby ensuring the effective area of ​​the W pixels. Therefore, while suppressing the output step difference between the W pixels, the degradation of the sensitivity of the W pixels can be suppressed.

[0080] Note that since the width of the peripheral color filter 118G2 is narrower than that of the peripheral color filter 118G1, the effect on the effective area of ​​the W pixel is small. Therefore, the peripheral color filter 118G1 may not be formed only at the intersection of the corners of the R pixel.

[0081] Next, a method of forming the color filter 116 in the manufacturing process of the light detecting device 1 will be described. Fig.111 is a diagram for explaining an example of a method of forming a color filter in a manufacturing process of a light detecting device according to an embodiment of the present technology. Fig.11 (a) to Fig.11 In (e), the upper figure is a schematic plan view of the light detecting device 1 in the manufacturing process, and the lower figure is a schematic partial cross-sectional view of the corresponding cross section.

[0082] First, the back surface of the deposited Si semiconductor layer 111 is ground, and then a planarization film 115 ( Fig.11 (a)). Note that, although not shown, a light shielding film 113 is formed on the back surface of the Si semiconductor layer 111.

[0083] After the planarization film 115 is formed, the RGB color filters 116 are respectively formed. In this example, it is assumed that the color filters 116 are formed in the order of GRB. Note that, for example, the W pixel is formed by using the material of the on-chip lens 117.

[0084] That is, a green color filter material is formed on the planarization film 115, and is further exposed through a photomask pattern and then etched. Thus, a green color filter 116G is formed, and at the same time, a peripheral color filter 116G1 around the R pixel and a peripheral color filter 116G2 around the B pixel are formed ( Fig.11 (b)).

[0085] Next, a red color filter material is formed on the planarization film 115, and is further exposed through a photomask pattern and then etched, thereby forming a red color filter 116R ( Fig.11 (c)).

[0086] Next, a red color filter material is formed on the planarization film 115, and is further exposed through a photomask pattern and then etched, thereby forming a red color filter 116B ( Fig.11 (d), however, in Fig.11 In (d), the cross section is offset by one pixel to illustrate the G pixel).

[0087] After the color filter 116 is formed using the RGB color filter material, a transparent material of the on-chip lens 117 is formed thereon. The amount of the transparent material is adjusted so that the portion corresponding to the W pixel is well filled. Next, the transparent material is reflowed to form a lens curved surface, thereby forming the on-chip lens 117 ( Fig.11 (e)).

[0088] As described above, when the color filter 116 of the same color is formed, the peripheral color filter 118 can be formed at the same time by following the mask pattern. Therefore, since no additional manufacturing process and equipment for forming the peripheral color filter 118 are required, the above-mentioned output step difference between W pixels can be eliminated while avoiding an increase in manufacturing cost.

[0089] As described above, according to the present embodiment, by forming the peripheral color filter 118, light of a specific wavelength band is effectively suppressed or regulated from entering the W pixel from the pixel P adjacent to the W pixel, so that the output step difference between the W pixels can be eliminated or ignored. Therefore, good image quality can be obtained without periodic brightness step differences appearing in the reproduced image.

[0090] In particular, since the width of the peripheral color filter 118 is set according to the color of the color filter 116 of the pixel P, it is possible to more effectively suppress or regulate light of a specific wavelength band from entering the W pixel from the adjacent pixel P.

[0091] <Second Implementation Method>

[0092] This embodiment is a modification of the first embodiment, and is characterized in that the width of the light shielding film 113 formed on the Si semiconductor layer 111 is defined according to the wavelength characteristics of each RGB color filter 116 .

[0093] Fig.12 : is a partial cross-sectional view showing a schematic structure of a pixel in a light detection device according to an embodiment of the present technology. In addition, Fig.13 It is used to illustrate Fig.12 1 is a partial plan view of a pixel shielding film in an RGBW pixel array shown in FIG. The light detecting device 1 according to the present embodiment is different from the light detecting device 1 according to the first embodiment in that the width of the light shielding film 113 defining the opening (light receiving area) of the light receiving element is different depending on the wavelength of light passing through the color filter 116. Note that in the following description, Figure 6 The color arrangement configuration of the peripheral color filter 118 in the illustrated RGBW pixel array is described as an example, but the present invention is not limited thereto, and other color arrangement configurations may be used.

[0094] That is, light diffraction occurs because part of the light passing through the color filter 116 is blocked by the light shielding film 113. Since the diffracted light diffracts into the adjacent semiconductor region 1111, color mixing occurs and image quality deteriorates. At this time, since the diffraction angle increases as the wavelength of light increases, the influence of diffraction increases particularly in the R pixel through which light having a red wavelength passes.

[0095] Therefore, in this embodiment, if Fig.12 and Fig.13As shown, a light shielding film 113 is formed surrounding each pixel P of RGB, so that the width of the light shielding film 113 surrounding the R pixel is the narrowest first width δ1, the width of the light shielding film 113 surrounding the G pixel is the second width δ2 wider than the first width δ1, and the width of the light shielding film 113 surrounding the B pixel is the third width δ3 wider than the second width δ2 (i.e., δ1<δ2<δ3). That is, as the width of the light shielding film 113 surrounding the pixel P becomes narrower, the size of the opening defined by it becomes larger, thereby reducing the influence of diffraction.

[0096] Furthermore, the width portion of the light shielding film 113 defining the opening of the W pixel may be bilaterally symmetrical about the boundary of the pixel P. That is, the width d of the portion extending inward from the boundary line between the W pixel and the adjacent pixel P to define the opening of the W pixel is the same.

[0097] As described above, according to the present embodiment, while suppressing the influence of diffraction of each wavelength, it is possible to further suppress the influence of color mixing due to the asymmetry of each pixel P adjacent to the W pixel.

[0098] <Third Implementation Method>

[0099] The present embodiment is a modified example of the first or second embodiment, and is characterized in that the peripheral color filter 118 is applied to an RGBW pixel array in which W pixels are arranged based on a quad-Bayer array.

[0100] In the RGBW pixel array where the W pixels are arranged based on a four-Bayer array, a group of four pixels P (refer to Figure 3 (b)) to form block pixels, and one W pixel is included in each group of four pixels P. Even in this RGBW pixel array, the amount of light entering from the pixel P adjacent to the W pixel relative to the amount of light directly incident on the W pixel is different for each of the three array patterns, and a step difference is generated in the output level itself of the electrical signal taken out from the W pixel. Therefore, by forming the peripheral color filter 118 around the color filter 116, the output step difference between the W pixels is suppressed.

[0101] Fig.14 1 is a partial plan view of an example of a color arrangement configuration of a peripheral color filter in an RGBW pixel array of a light detection device 1 according to an embodiment of the present technology. As shown in the figure, in the RGBW pixel array, peripheral color filters 118G1 and 118G2 are formed in R pixels and B pixels, respectively. Therefore, the arrangement period of the color filter around each W pixel is unified to green. In addition, similar to the above-mentioned embodiment, the width of the peripheral color filter 118G1 around the R pixel is formed to be wider than the width of the peripheral color filter 118G2 around the B pixel.

[0102] Therefore, while further suppressing the color mixing from the R pixel to the W pixel, it is possible to suppress the degradation of the sensitivity of the B pixel. Note that in this example, the peripheral color filter 118G1 is formed in all three R pixels, but for the R pixel adjacent to the G pixel (i.e., the upper left R pixel), the formation of the peripheral color filter 118G1 can be omitted.

[0103] (Variation Example)

[0104] Fig.15 1 is a partial plan view for explaining another example of the color arrangement structure of the peripheral color filter in the RGBW pixel array of the light detection device 1 according to the embodiment of the present technology. As shown in the figure, the color arrangement structure of the peripheral color filter 118 of this example is constructed by forming a red peripheral color filter 118R around the B pixel. Therefore, the arrangement period of the color filter around the W pixel is unified to 2 green and 2 red. Therefore, the output step difference between the W pixels can be eliminated.

[0105] Fig.16 1 is a partial plan view for explaining another example of the color arrangement structure of the peripheral color filter in the RGBW pixel array of the light detection device 1 according to the embodiment of the present technology. As shown in the figure, in the peripheral color filter 118 of this example, the blue peripheral color filter 118R is formed around the R pixel. Therefore, the arrangement period of the color filter around the W pixel is unified to 2 green and 2 blue. Therefore, the output step difference between the W pixels can be eliminated.

[0106] Note that in this embodiment, the width of the light shielding film 113 formed on the Si semiconductor layer 111 is constant, but the present invention is not limited thereto. As described in the second embodiment, the width of the light shielding film 113 can be appropriately set according to the wavelength characteristics of each RGB color filter 116.

[0107] <4. Application examples for mobile objects>

[0108] The technology according to the present invention (the present technology) can be applied to various products. For example, the technology according to the present invention can be implemented in the form of a device installed on any type of mobile body such as an automobile, an electric car, a hybrid car, a motorcycle, a bicycle, a personal mobile device, an airplane, an unmanned aerial vehicle, a ship, a robot, etc.

[0109] Fig.17 : is a block diagram showing a schematic configuration example of a vehicle control system as an example of a moving body control system to which the technology according to the present invention can be applied.

[0110] The vehicle control system 12000 includes a plurality of electronic control units connected to each other via a communication network 12001. Fig.17In the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. In addition, as a functional configuration of the integrated control unit 12050, a microcomputer 12051, a sound / image output unit 12052, and an in-vehicle network interface (I / F) 12053 are shown.

[0111] The drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various types of programs. For example, the drive system control unit 12010 serves as a control device for the following devices: a drive force generating device such as an internal combustion engine or a drive motor for generating a vehicle drive force, a drive force transmitting mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a vehicle braking force.

[0112] The body system control unit 12020 controls the operation of various types of devices provided on the vehicle body according to various types of programs. For example, the body system control unit 12020 is used as a control device for a keyless entry system, a smart key system, a power window device, or various lights such as a headlight, a reverse light, a brake light, a turn signal light, or a fog light. In this case, a radio wave transmitted from a mobile device that replaces the key or a signal of various types of switches may be input to the body system control unit 12020. The body system control unit 12020 receives input of these radio waves or signals, and controls a door lock device, a power window device, or a light, etc. of the vehicle.

[0113] The vehicle exterior information detection unit 12030 detects information outside the vehicle on which the vehicle control system 12000 is installed. For example, the vehicle exterior information detection unit 12030 is connected to the camera unit 12031. The vehicle exterior information detection unit 12030 causes the camera unit 12031 to capture an image of the vehicle exterior and receives the captured image. Based on the received image, the vehicle exterior information detection unit 12030 can perform detection processing of objects such as people, vehicles, obstacles, signs, or characters on the road surface, or can perform detection processing of the distance to the above-mentioned objects.

[0114] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or can output the electrical signal as distance measurement information. In addition, the light received by the imaging unit 12031 can be visible light, or can be invisible light such as infrared rays.

[0115] The in-vehicle information detection unit 12040 detects information about the interior of the vehicle. The in-vehicle information detection unit 12040 is connected to, for example, a driver state detection unit 12041 that detects the driver's state. The driver state detection unit 12041 includes, for example, a camera that takes a picture of the driver. Based on the detection information input from the driver state detection unit 12041, the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or the driver's concentration level, or can determine whether the driver is dozing off.

[0116] The microcomputer 12051 can calculate the control target value of the driving force generating device, the steering mechanism or the braking device based on the information outside or inside the vehicle obtained by the vehicle outside information detection unit 12030 or the vehicle inside information detection unit 12040, and output the control command to the driving system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of the advanced driver assistance system (ADAS), including collision avoidance or impact mitigation of the vehicle, following driving based on the vehicle-to-vehicle distance, speed keeping driving, vehicle collision warning or vehicle lane departure warning, etc.

[0117] In addition, by controlling the driving force generating device, steering mechanism or braking device, etc. based on the information outside or inside the vehicle obtained by the external information detection unit 12030 or the internal information detection unit 12040, the microcomputer 12051 is able to perform collaborative control aimed at achieving automatic driving, etc., wherein the automatic driving enables the vehicle to drive autonomously without relying on the driver's operation.

[0118] Furthermore, based on the information outside the vehicle obtained by the vehicle exterior information detection unit 12030, the microcomputer 12051 may output a control command to the body system control unit 12030. For example, the microcomputer 12051 may perform cooperative control aimed at preventing glare by controlling the headlights to change from high beam to low beam, for example, according to the position of a preceding vehicle or an oncoming vehicle detected by the vehicle exterior information detection unit 12030.

[0119] The sound / image output unit 12052 sends an output signal of at least one of sound or image to an output device capable of visually or auditorily notifying the vehicle's passengers or the outside of the vehicle of the information. Fig.17 In the example of , as output devices, an audio speaker 12061, a display portion 12062, and an instrument panel 12063 are shown. For example, the display portion 12062 may include at least one of an in-vehicle display or a head-up display.

[0120] Fig.18 12031 is a diagram showing an example of the installation position of the camera unit 12031.

[0121] exist Fig.18 In the figure, the camera unit 12031 includes camera units 12101, 12102, 12103, 12104 and 12105.

[0122] For example, the camera units 12101, 12102, 12103, 12104, and 12105 are arranged at positions on the front nose, rearview mirror, rear bumper, and rear door of the vehicle 12100, and at the upper portion of the windshield in the interior of the vehicle. The camera unit 12101 arranged at the front nose and the camera unit 12105 arranged at the upper portion of the windshield in the vehicle compartment mainly obtain images in front of the vehicle 12100. The camera units 12102 and 12103 arranged at the rearview mirror mainly obtain images on both sides of the vehicle 12100. The camera unit 12104 arranged at the rear bumper or rear door mainly obtains images behind the vehicle 12100. The camera unit 12105 arranged at the upper portion of the windshield in the interior of the vehicle is mainly used to detect the front vehicle, pedestrians, obstacles, signal lights, traffic signs, lanes, etc.

[0123] Note that, Fig.18 An example of the imaging range of the imaging units 12101 to 12104 is shown. The imaging range 12111 indicates the imaging range of the imaging unit 12101 provided at the front nose. The imaging ranges 12112 and 12113 respectively indicate the imaging ranges of the imaging units 12102 and 12103 provided at the rearview mirror. The imaging range 12114 indicates the imaging range of the imaging unit 12104 provided at the rear bumper or the rear door. For example, by superimposing the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 observed from above is obtained.

[0124] At least one of the imaging units 12101 to 12104 may have a function of obtaining distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera composed of a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.

[0125] For example, the microcomputer 12051 determines the distance of each three-dimensional object within the imaging range 12111 to 12114 and the time change of the distance (relative speed relative to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104, thereby being able to extract the nearest three-dimensional object as the front vehicle, in particular, the three-dimensional object exists on the driving path of the vehicle 12100 and travels in the same direction as the vehicle 12100 at a predetermined speed (e.g., equal to or greater than 0 km / h). In addition, the microcomputer 12051 can pre-set the inter-vehicle distance to be maintained with the front vehicle, and perform automatic braking control (including follow-up stop control) or automatic acceleration control (including follow-up start control), etc. Therefore, cooperative control such as automatic driving, which aims to make the vehicle travel autonomously without relying on the operation of the driver, can be performed.

[0126] For example, based on the distance information obtained from the camera units 12101 to 12104, the microcomputer 12501 can classify the three-dimensional object data of the three-dimensional object into three-dimensional object data of two-wheeled vehicles, standard vehicles, large vehicles, pedestrians, telephone poles and other three-dimensional objects, extract the classified three-dimensional object data, and use the extracted three-dimensional object data to automatically avoid obstacles. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that the driver of the vehicle 12100 can visually identify and obstacles that the driver of the vehicle 12100 is difficult to visually identify. Then, the microcomputer 12051 determines a collision risk for indicating the risk of collision with each obstacle. In the case where the collision risk is higher than or equal to the set value and therefore there is a possibility of collision, the microcomputer 12051 can output a warning to the driver via the audio speaker 12061 or the display unit 12062, and perform forced deceleration or evasive steering via the drive system control unit 12010. Therefore, the microcomputer 12051 can assist driving to avoid collisions.

[0127] At least one of the camera units 12101 to 12104 may be an infrared camera that detects infrared rays. The microcomputer 12051 may identify a pedestrian, for example, by determining whether a pedestrian exists in the camera images of the camera units 12101 to 12104. For example, such identification of pedestrians is performed by the following steps: a step of extracting feature points in the camera images of the camera units 12101 to 12104 as infrared cameras; and a step of performing pattern matching processing on a series of feature points representing the contour of an object to determine whether it is a pedestrian. If the microcomputer 12051 determines that a pedestrian exists in the camera images of the camera units 12101 to 12104 and thus identifies the pedestrian, the sound / image output unit 12052 controls the display unit 12062 so that a square contour line for emphasis is displayed in a manner superimposed on the identified pedestrian. In addition, the sound / image output unit 12052 may also control the display unit 12062 so that an icon representing a pedestrian or the like is displayed at a desired position.

[0128] An example of a vehicle control system to which the technology according to the present invention can be applied has been described above. The technology according to the present invention can be applied to, for example, the camera unit 12031 in the above-mentioned components. Specifically, Figure 1 The light detection device 1 shown can be applied to the camera 12031. By applying the technology according to the present invention to the camera 12031, the output step difference between W pixels is suppressed, and a more accurate and easier to view captured image can be obtained, thereby reducing the fatigue of the driver.

[0129] <5. Conclusion>

[0130] Each of the above-mentioned embodiments is an example for explaining the present technology, and is not intended to limit the present technology to only these embodiments. The present technology can be implemented in various forms without departing from the gist thereof.

[0131] For example, in the methods disclosed in this specification, steps, operations or functions may be performed in parallel or in different orders, as long as there are no inconsistencies in the results. The steps, operations and functions described are provided only as examples, and some steps, operations or functions may be omitted, combined and integrated, or other steps, operations or functions may be added without departing from the technical purpose.

[0132] In addition, although various embodiments are disclosed in this specification, certain features (technical matters) in one embodiment may be added to or replaced with certain features of other embodiments while being appropriately modified, and these forms are also included in the gist of the present invention.

[0133] Furthermore, the present technology may include the following technical matters. (1)

[0135] A light detection device comprising a pixel array section in which a plurality of pixels are arranged in an array,

[0136] Wherein, each of the plurality of pixels comprises:

[0137] a photoelectric conversion element capable of generating an electrical signal corresponding to the received light; and

[0138] a color filter formed on a light receiving surface of the photoelectric conversion element that receives the light according to a predetermined color filter pattern, and the color filter transmits light of a specific wavelength band in the light, and

[0139] The plurality of pixels comprises:

[0140] a first pixel comprising a first color filter that transmits light of a first wavelength band;

[0141] a second pixel adjacent to the first pixel and including a second color filter that transmits light of a second wavelength band;

[0142] a third pixel adjacent to the first pixel and including a third color filter that transmits light of a third wavelength band having a peak wavelength shorter than a peak wavelength of the second wavelength band; and

[0143] a fourth pixel adjacent to the first pixel and including a fourth color filter that transmits light of a fourth wavelength band having a peak wavelength shorter than a peak wavelength of the third wavelength band, and

[0144] The second pixel includes a first peripheral color filter formed to surround an outer circumference of the second color filter and to transmit light of the third wavelength band. (2)

[0146] According to the light detection device described in (1),

[0147] The fourth pixel includes a second peripheral color filter, and the second peripheral color filter is formed to surround the second color filter and transmit the light of the third wavelength band. (3)

[0149] According to the light detection device described in (2),

[0150] Wherein, in a plane parallel to the light receiving surface, the width of the first peripheral color filter is wider than the width of the second peripheral color filter. (4)

[0152] According to the light detection device described in (2) or (3),

[0153] wherein the first peripheral color filter is formed to avoid a portion where corners of the second pixel intersect each other, and

[0154] The second peripheral color filter is formed to avoid a portion where corner portions of the fourth pixel meet each other. (5)

[0156] The light detection device according to any one of (1) to (3),

[0157] Each of the plurality of pixels includes a light shielding film, which is formed between a light receiving surface of the photoelectric conversion element and the color filter and defines a light receiving region of the photoelectric conversion element. (6)

[0159] According to the light detection device described in (5),

[0160] The width of the light shielding film is defined according to a specific wavelength of the light transmitted by the color filter formed in the pixel. (7)

[0162] According to the light detection device described in (6),

[0163] The light receiving area of ​​the second pixel defined by the light shielding film is wider than the light receiving area of ​​the fourth pixel defined by the light shielding film. (8)

[0165] A light detection device comprising a pixel array section in which a plurality of pixels are arranged in an array,

[0166] wherein each of the plurality of pixels comprises:

[0167] a photoelectric conversion element capable of generating an electrical signal corresponding to the received light; and

[0168] a color filter formed on a light receiving surface of the photoelectric conversion element that receives the light according to a predetermined color filter pattern, and the color filter transmits light of a specific wavelength band in the light, and

[0169] The plurality of pixels comprises:

[0170] a first pixel comprising a first color filter that transmits light of a first wavelength band;

[0171] a second pixel adjacent to the first pixel and including a second color filter that transmits light of a second wavelength band;

[0172] a third pixel adjacent to the first pixel and including a third color filter that transmits light of a third wavelength band having a peak wavelength shorter than a peak wavelength of the second wavelength band; and

[0173] a fourth pixel adjacent to the first pixel and including a fourth color filter that transmits light of a fourth wavelength band having a peak wavelength shorter than a peak wavelength of the third wavelength band, and

[0174] The fourth pixel includes a third peripheral color filter formed to surround the second color filter and to transmit light of the second wavelength band. (9)

[0176] A light detection device comprising a pixel array section in which a plurality of pixels are arranged in an array,

[0177] wherein each of the plurality of pixels comprises:

[0178] a photoelectric conversion element capable of generating an electrical signal corresponding to the received light; and

[0179] a color filter formed on a light receiving surface of the photoelectric conversion element that receives the light according to a predetermined color filter pattern, and the color filter transmits light of a specific wavelength band in the light, and

[0180] The plurality of pixels comprises:

[0181] a first pixel comprising a first color filter that transmits light of a first wavelength band;

[0182] a second pixel adjacent to the first pixel and including a second color filter that transmits light of a second wavelength band;

[0183] a third pixel adjacent to the first pixel and including a third color filter that transmits light of a third wavelength band having a peak wavelength shorter than a peak wavelength of the second wavelength band; and

[0184] a fourth pixel adjacent to the first pixel and including a fourth color filter that transmits light of a fourth wavelength band having a peak wavelength shorter than a peak wavelength of the third wavelength band, and

[0185] The second pixel includes a fourth peripheral color filter formed to surround the second color filter and to transmit light of the second wavelength band. (10)

[0187] The light detection device according to any one of (1) to (9),

[0188] The array of the plurality of pixels includes an RGBW pixel array, in which the first pixels are arranged based on a Bayer array. (11)

[0190] The light detection device according to any one of (1) to (9),

[0191] The array of the plurality of pixels comprises an RGBW pixel array, in which the first pixels are arranged based on a quad-Bayer array.

[0192] Reference numerals list

[0193] 1. Light detection device

[0194] 11 first semiconductor substrate

[0195] 111 Si semiconductor layer

[0196] 1111 Semiconductor Area

[0197] 1112 Silicon oxide film

[0198] 112 wiring layer

[0199] 113 light-shielding film

[0200] 114 pixel divider

[0201] 115 flattening film

[0202] 116 color filters

[0203] 117 On-chip lens

[0204] 118 peripheral color filter

[0205] 12 second semiconductor substrate 12

[0206] 121 Si semiconductor layer

[0207] 122 wiring layer

[0208] 13 Pixel array unit

[0209] P Pixel

Claims

1. A light detection device comprising a pixel array section in which a plurality of pixels are arranged in an array, in, Each of the plurality of pixels comprises: a photoelectric conversion element capable of generating an electrical signal corresponding to the received light; and a color filter formed on a light receiving surface of the photoelectric conversion element that receives the light according to a predetermined color filter pattern, and the color filter transmits light of a specific wavelength band in the light, and The plurality of pixels comprises: a first pixel comprising a first color filter that transmits light of a first wavelength band; a second pixel adjacent to the first pixel and including a second color filter that transmits light of a second wavelength band; a third pixel adjacent to the first pixel and including a third color filter that transmits light of a third wavelength band having a peak wavelength shorter than a peak wavelength of the second wavelength band; and a fourth pixel adjacent to the first pixel and including a fourth color filter that transmits light of a fourth wavelength band having a peak wavelength shorter than a peak wavelength of the third wavelength band, and The second pixel includes a first peripheral color filter formed to surround an outer circumference of the second color filter and to transmit light of the third wavelength band.

2. The light detection device according to claim 1, in, The fourth pixel includes a second peripheral color filter formed to surround the second color filter and to transmit light of the third wavelength band.

3. The light detection device according to claim 2, in, In a plane parallel to the light receiving surface, a width of the first peripheral color filter is wider than a width of the second peripheral color filter.

4. The light detection device according to claim 2, in, The first peripheral color filter is formed to avoid a portion where corners of the second pixel intersect each other, and The second peripheral color filter is formed to avoid a portion where corner portions of the fourth pixel meet each other.

5. The light detection device according to claim 3, in, Each of the plurality of pixels includes a light shielding film which is formed between a light receiving surface of the photoelectric conversion element and the color filter and defines a light receiving region of the photoelectric conversion element.

6. The light detection device according to claim 5, in, The width of the light shielding film is defined according to a specific wavelength of the light transmitted by the color filter formed in the pixel.

7. The light detection device according to claim 6, in, The light receiving area of ​​the second pixel defined by the light shielding film is wider than the light receiving area of ​​the fourth pixel defined by the light shielding film.

8. A light detection device comprising a pixel array section in which a plurality of pixels are arranged in an array, wherein each of the plurality of pixels comprises: A photoelectric conversion element capable of generating an electrical signal corresponding to the received light; and a color filter formed on a light receiving surface of the photoelectric conversion element that receives the light according to a predetermined color filter pattern, and the color filter transmits light of a specific wavelength band in the light, and The plurality of pixels comprises: a first pixel comprising a first color filter that transmits light of a first wavelength band; a second pixel adjacent to the first pixel and including a second color filter that transmits light of a second wavelength band; a third pixel adjacent to the first pixel and including a third color filter that transmits light of a third wavelength band having a peak wavelength shorter than a peak wavelength of the second wavelength band; and a fourth pixel adjacent to the first pixel and including a fourth color filter that transmits light of a fourth wavelength band having a peak wavelength shorter than a peak wavelength of the third wavelength band, and The fourth pixel includes a third peripheral color filter formed to surround the second color filter and transmit light of the second wavelength band.

9. A light detection device comprising a pixel array section in which a plurality of pixels are arranged in an array, wherein each of the plurality of pixels comprises: A photoelectric conversion element capable of generating an electrical signal corresponding to the received light; and a color filter formed on a light receiving surface of the photoelectric conversion element that receives the light according to a predetermined color filter pattern, and the color filter transmits light of a specific wavelength band in the light, and The plurality of pixels comprises: a first pixel comprising a first color filter that transmits light of a first wavelength band; a second pixel adjacent to the first pixel and including a second color filter that transmits light of a second wavelength band; a third pixel adjacent to the first pixel and including a third color filter that transmits light of a third wavelength band having a peak wavelength shorter than a peak wavelength of the second wavelength band; and a fourth pixel adjacent to the first pixel and including a fourth color filter that transmits light of a fourth wavelength band having a peak wavelength shorter than a peak wavelength of the third wavelength band, and The second pixel includes a fourth peripheral color filter formed to surround the second color filter and to transmit light of the second wavelength band.

10. The light detection device according to claim 1, in, The array of the plurality of pixels includes an RGBW pixel array in which the first pixels are arranged based on a Bayer array.

11. The light detection device according to claim 1, The array of the plurality of pixels comprises an RGBW pixel array, in which the first pixels are arranged based on a quad-Bayer array.

Images