Wafer stripping and cleaning device

Abstract

The invention provides a wafer peeling and cleaning apparatus, which can reduce the frequency of generation of defects such as edge breakage, improve the processing capability, or improve the quality of a single wafer. A wafer peeling and cleaning apparatus for peeling wafers cut from a wafer ingot and formed in a batch state from a slicing base one by one to singulate the wafers, and cleaning the peeled wafers by singulating the wafers, the wafer peeling and cleaning apparatus including: a peeling unit including an arm for holding the wafers and peeling the wafers from the slicing base; and an imaging unit that, when the wafer held by the arm is used as a first wafer, is disposed at a position at which an image of a region including a gap between the first wafer and a second wafer adjacent to the first wafer can be captured. The peeling unit starts the peeling operation of the first wafer when the width of the gap satisfies a predetermined reference as a result of the imaging.

Description

Technical Field

[0001] The present disclosure relates to a wafer peeling and cleaning device, and more particularly to a wafer peeling and cleaning device that peels wafers that are cut into a plurality of pieces at the same time by a wire saw and formed into a batch state (a bundled state) from a slicing base, separates them into individual pieces, and cleans them. Background Art

[0002] When the ingot is cut by a wire saw, the wafer is cut out while being adhered to the slicing base. Therefore, the wafer is peeled off from the slicing base and separated into individual pieces. As an apparatus for performing this process, a wafer peeling and cleaning apparatus disclosed in Patent Document 1 is known.

[0003] Prior art literature Patent Literature Patent Document 1: Japanese Patent Application Publication No. 2020-120094 Summary of the invention Problems to be solved by the invention The wafer stripping and cleaning device described in Patent Document 1 has excellent performance and is original. However, the quality required of the wafers after singulation and the processing capacity required of the device are continuously improved. In view of the current requirements, the conventional wafer stripping and cleaning devices have room for improvement in terms of the frequency of defects such as chipping, processing capacity, or the quality of the wafers after singulation.

[0004] The wafer peeling and cleaning apparatus disclosed in this specification can reduce the frequency of defects such as chipping, improve the processing capacity, or improve the quality of wafers after being singulated.

[0005] Means used to solve problems The first wafer stripping and cleaning device disclosed in the present specification is a wafer stripping and cleaning device as follows: wafers cut from a crystal ingot to form a batch state are stripped one by one from a slicing base to be singulated, and the wafers after stripping are cleaned individually, wherein the wafer stripping and cleaning device comprises: a stripping unit, including an arm for holding the wafer and stripping the wafer from the slicing base; and a photographing unit, when the wafer held by the arm is used as a first wafer, the photographing unit is arranged at a position capable of photographing an area including a gap between the first wafer and a second wafer adjacent to the first wafer, and when the result of the photographing is that the width of the gap satisfies a predetermined reference, the stripping unit starts the above-mentioned stripping action of the above-mentioned first wafer.

[0006] Effects of the Invention The wafer peeling and cleaning apparatus disclosed in this specification can reduce the frequency of defects such as chipping, improve the processing capacity, or improve the quality of wafers after being singulated. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 It is an overall top view of the wafer stripping and cleaning device.

[0008] Figure 2 is a top view of the stripping device.

[0009] Figure 3 This is a front view of the stripping device and the hot water tank.

[0010] Figure 4 It is the front view of the handover device.

[0011] Figure 5 It is an enlarged side view of the main part of the peeling unit.

[0012] Figure 6 It is an enlarged front view of the main part of the peeling unit.

[0013] Figure 7 It is a perspective view showing an air nozzle.

[0014] Figure 8 It is an explanatory diagram showing the effect of air during peeling.

[0015] Fig. 9 Schematic diagram of an image obtained by photographing the top of wafer W using a camera.

[0016] Fig.10 This is a diagram for explaining the function of the single chip removal adjustment section.

[0017] Fig.11 It is a top view showing the shape of the nozzle hole.

[0018] Description of Reference Numerals 1: wafer stripping cleaning device; 10: rough cleaning section; 12: rough cleaning device; 80, 81: air nozzle; 81-1, 81-2, 81-3: nozzle hole; 100: wafer stripping single wafer section; 112: hot water tank; 114: stripping device; 118: handover device; 120: hot water; 123: camera; 150: stripping unit; 190: arm; 200: first stripping adsorption pad; 201: second stripping adsorption pad; 216: single wafer removal adjustment section; 310: conveying section; 350: single wafer cleaning section; 352: brush cleaning section; 354: pre-rinsing section; 356: rinsing section; 400: detection section; 500: recovery section. DETAILED DESCRIPTION

[0019] The first wafer stripping and cleaning device disclosed in the present specification is a wafer stripping and cleaning device as follows: wafers cut from a crystal ingot to form a batch state are stripped one by one from a slicing base to be singulated, and the wafers after stripping are cleaned individually, wherein the wafer stripping and cleaning device comprises: a stripping unit, including an arm for holding the wafer and stripping the wafer from the slicing base; and a photographing unit, when the wafer held by the arm is used as a first wafer, the photographing unit is arranged at a position capable of photographing an area including a gap between the first wafer and a second wafer adjacent to the first wafer, and when the result of the photographing is that the width of the gap satisfies a predetermined reference, the stripping unit starts the above-mentioned stripping action of the above-mentioned first wafer.

[0020] When the wafers are cut from the ingot and held by the slicing base at one end (circumferential surface) in a state of being arranged one by one, and peeled off one by one, the parallel wafers are arranged so that their surfaces face each other, and water is sometimes interposed between them, causing the wafers to adsorb to each other. In particular, the end surface on the side opposite to the side held by the slicing base is in a so-called free state, so the wafers are easily contacted with each other by just a slight tilt, which easily causes adsorption.

[0021] If the adjacent wafers are adsorbed, it will become an obstacle when peeling one by one. Therefore, air is supplied between the wafers to separate the adsorbed wafers and perform the peeling operation. In addition, in order to improve the processing capacity per unit time of the peeling operation, sometimes air is supplied not only between the first and second wafers, but also between the second and third wafers, the third and fourth wafers, etc., and the preparation for peeling is carried out at the same time.

[0022] However, even when air is supplied, wafers may sometimes be attracted to each other. In this case, when the first wafer is peeled or transferred, the second wafer is moved along with it, which may cause defects such as scratches or defects.

[0023] The first wafer stripping and cleaning device is configured to use a photographing unit to photograph an area including a gap between a first wafer to be stripped and a second wafer adjacent thereto, and as a result, when the width of the gap satisfies a predetermined reference, the stripping operation is started. The predetermined reference is, for example, a certain range of values ​​including the size (design value) of the gap between the wafers when the wafers maintain a desired posture (approximately parallel). The situation in which the predetermined reference is satisfied means that there is a sufficient gap between the first wafer and the second wafer.

[0024] After the imaging unit confirms that the first wafer and the second wafer are sufficiently separated, that is, not in contact with each other, the peeling operation is started, so the frequency of occurrence of defects is reduced.

[0025] The second chip stripping and cleaning device disclosed in the present specification is a chip stripping and cleaning device as follows: based on the first chip stripping and cleaning device, the chip stripping and cleaning device has a hot water tank, and the hot water tank is configured to store hot water, at least immerse the above-mentioned slicing base in the above-mentioned hot water, and can adjust the bonding strength of the adhesive bonding the above-mentioned chip to the above-mentioned slicing base. The above-mentioned chip is maintained to protrude outward from the water surface of the above-mentioned hot water when the above-mentioned slicing base is immersed in the above-mentioned hot water, and the above-mentioned shooting unit is arranged at a position capable of shooting the above-mentioned area in the above-mentioned protruding part.

[0026] The second wafer stripping and cleaning device is equipped with a hot water tank. The slicing base side is immersed in hot water stored in the hot water tank, and the end portion on the opposite side (most of the wafer) is held in a manner protruding from the water surface, and the adhesive strength of the adhesive is adjusted (typically, softened), so that the wafer can be more easily stripped from the slicing base.

[0027] The imaging unit is configured to be able to image the area protruding from the water surface of the wafer bonded and held on the slicing base in a predetermined posture. The wafers are likely to come into contact with each other at the portion protruding from the water surface. This is because the wafers are bonded and held at a predetermined interval on the slicing base. According to the second wafer stripping and cleaning device configured so that the imaging unit can image this portion, the stripping operation can be started more reliably in a state where the wafers are not in contact with each other, thereby further suppressing the frequency of defective production.

[0028] The third chip stripping and cleaning device disclosed in the present specification is a chip stripping and cleaning device as follows: on the basis of the first chip stripping and cleaning device or the second chip stripping and cleaning device, the above-mentioned photographing unit is arranged at a position capable of photographing the above-mentioned area including the circumferential surface of the above-mentioned chip which is roughly symmetrical with the center of the chip clamped by the part held by the above-mentioned slicing base.

[0029] The wafers are likely to come into contact with each other at a portion (upper side) symmetrical to the portion (lower side) bonded to the slicing base with the center (reference) of the wafer sandwiched therebetween. This is because there is no member (slicing base) supporting the wafer at this portion. By using the imaging unit to capture the gap portion including the circumferential surface of the wafer in this portion, the gap is confirmed and the peeling operation is started, so that the peeling operation can be started more reliably in a state where the wafers are not adsorbed to each other, and the frequency of defective occurrence can be further suppressed.

[0030] The fourth wafer stripping and cleaning device disclosed in the present specification is a wafer stripping and cleaning device as follows: based on the second wafer stripping and cleaning device or the third wafer stripping and cleaning device, the wafer stripping and cleaning device has at least one air supply unit, and the air supply unit is configured to blow air along the surface of the wafer extending from the slicing base and from the slicing base side toward the wafer side, and when blowing the air, the camera unit photographs the area.

[0031] According to the fourth wafer stripping and cleaning device, air is supplied from the lower side to the upper side of the wafer by the air supply unit, so that even if the first wafer and the second wafer are in contact with each other, they can be separated. By photographing the gap portion while blowing air, the stripping operation can be started more reliably in a state where the wafers are not in contact with each other, so the frequency of defective occurrence can be further suppressed.

[0032] The fifth chip stripping and cleaning device disclosed in the present specification is a chip stripping and cleaning device as follows: based on the fourth chip stripping and cleaning device, the air supply unit is configured to blow the air within a predetermined time period before the stripping action of the first chip, and when the result of the photographing is that the width of the gap satisfies the reference, the blowing of the air is stopped before the time has passed.

[0033] The fifth wafer stripping and cleaning device is configured to stop blowing air within a predetermined time if the result of the photographing confirms that no contact has occurred, thereby suppressing the blowing of air more than necessary. In other words, only necessary and sufficient air is blown, thereby shortening the time required for the stripping operation of a wafer, and as a result, the processing capacity of the device (the number of wafers processed per unit time) is improved.

[0034] The sixth chip stripping and cleaning device disclosed in the present specification is the following chip stripping and cleaning device: on the basis of the first chip stripping and cleaning device, the chip stripping and cleaning device comprises: a hot water tank, configured to store hot water, at least immersing the above-mentioned slicing base in the above-mentioned hot water, and capable of adjusting the bonding strength of the adhesive bonding the above-mentioned chip to the above-mentioned slicing base; and a temperature regulating unit, regulating the temperature of the above-mentioned hot water, and when the result of the above-mentioned shooting is that the width of the above-mentioned gap does not meet the predetermined benchmark, the above-mentioned temperature regulating unit adjusts the above-mentioned temperature.

[0035] According to the sixth wafer stripping and cleaning device, when the width of the gap does not meet a predetermined reference, the temperature of the hot water is adjusted accordingly. The situation where the predetermined reference is not met, that is, contact occurs, can be cited as a situation where there is a problem with the adhesion between the slicing base and the wafer. For example, if the adhesion is too small, the posture of the wafer may not be maintained, and the parallelism of the wafers may be impaired. In such a case, the temperature is adjusted to maintain the adhesion. The specific temperature adjustment method depends on the characteristics of the adhesive, for example, lowering the temperature of the hot water, or preventing the temperature of the hot water from being excessively increased.

[0036] If the water temperature is adjusted, the width of the gap will easily meet the above criteria when the first wafer is peeled and the second and subsequent wafers are peeled in sequence. As a result, the peeling operation is performed more quickly as a whole, and the processing capacity of the device is further improved.

[0037] The seventh wafer stripping and cleaning device disclosed in the present specification is a wafer stripping and cleaning device as follows: based on the first wafer stripping and cleaning device, the wafer stripping and cleaning device has a single wafer removal adjustment part, the single wafer removal adjustment part includes a slit, the width of the slit is adjusted to allow the wafers transferred by the stripping unit after the stripping to pass through one by one, and the photographing part photographs the wafer stripped from the slicing base when it is transferred and passed through the slit while being held on the arm.

[0038] The seventh wafer stripping and cleaning device is equipped with a single wafer removal adjustment unit, so that "a single wafer" can be obtained more reliably. The single wafer removal adjustment unit functions, for example, when a second wafer to be stripped contacts a part of the first wafer during stripping or transfer, and the surfaces of the second wafer are closely attached to each other through water, and the second wafer is also transferred together, so that a "bonded state" occurs. In this case, the second wafer cannot pass through the slit of the single wafer removal adjustment unit, so only the first wafer is obtained.

[0039] However, at this time, the second wafer contacts the single wafer removal adjustment part and the close contact is released, so that defects such as cracks and defects may occur together with the first wafer (especially the second wafer). On the other hand, even if the bonding state is achieved, the wafer may pass through the slit plate of the single wafer removal adjustment part. Therefore, there is a possibility that a wafer with a potential for defects such as cracks and defects may be transferred to the next process.

[0040] In the seventh wafer stripping and cleaning device, since the photographing unit photographs the wafer when passing through the slit, the occurrence of an undesirable situation, such as a bonding state, can be recorded as image information. This image information can be used, for example, to detect the occurrence of a fault through image recognition and generate an alarm message, or to record the history of each wafer. That is, it can be used as basic information that helps improve the quality of the manufactured wafers.

[0041] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0042] In the following description, the wafers peeled from the slicing base are sometimes described as the first wafer, the second wafer, ..., the nth wafer, etc. The first wafer is not a term referring to a specific wafer set in the device, but a relative term referring to the wafer that is (predetermined) to be first peeled by the peeling unit among the set wafers. That is, after the first wafer is peeled from the slicing base, the wafer that was previously the "second wafer" becomes the new "first wafer", and the subsequent wafers that are peeled in sequence are also promoted to the second wafer, the third wafer, ..., the n-1th wafer, respectively. Finally, the last "first wafer" is peeled off, and a series of peeling actions are completed.

[0043] In this specification, the term “wafer surface” refers to a substantially circular surface (back surface) that is a major surface of a disk-shaped wafer, and the term “wafer circumferential surface” refers to a side surface of the wafer.

[0044] In addition, in this specification, the numerical range expressed using "~" means a range including the numerical values ​​described before and after "~" as the lower limit and the upper limit.

[0045] The embodiments described below are examples of actualizing the technical concept. The technical concept does not specify the material, shape, structure, and arrangement of the components to the embodiments described below. The drawings are schematic.

[0046] Figure 1 1 is an overall top view of the wafer peeling and cleaning device 1 according to the present invention. Figure 2 114 is a top view of the peeling device 114 .

[0047] The wafer peeling and cleaning apparatus 1 of the present embodiment mainly includes a rough cleaning unit 10 , a wafer peeling individual wafer unit 100 , a conveying unit 310 , an individual wafer cleaning unit 350 , a detection unit 400 , and a recovery unit 500 .

[0048] The rough cleaning section 10 performs spray cleaning on the wafers W (wafers W bonded to the slicing base S) formed into a batch state by cutting the ingot with a wire saw to remove the polishing liquid attached during cutting. The rough cleaning section 10 is equipped with a rough cleaning device 12 for cleaning the wafers W. In the rough cleaning device 12, the wafers W are immersed in the cleaning liquid with the mounting plate M as the upper side and the slicing groove as the lower side to be cleaned. During cleaning, the wafers W are shaken up and down while generating a water flow in the groove to clean. When cleaning is completed, the wafers W unloaded from the rough cleaning section 10 are transported to the wafer stripping unit 100 by the elevator.

[0049] The wafer stripping singulation unit 100 strips the wafers W in batches from the slicing base S one by one to separate them. The wafer stripping singulation unit 100 is mainly composed of a hot water tank 112, a stripping device 114, and a transfer device 118. The transfer device 118 receives the wafers W stripped from the slicing base S by the stripping device 114 and transfers them to the shuttle conveyor 312 of the conveying unit 310.

[0050] The transport unit 310 receives the wafer W singulated by the wafer separation singulation unit 100 and transports the wafer to the wafer cleaning unit 350. The transport from the transport unit 310 to the wafer cleaning unit 350 is performed by a shuttle conveyor 312.

[0051] The wafer cleaning section 350 cleans the wafers W after singulation one by one. The wafer cleaning section 350 is mainly composed of a brush cleaning section 352, a pre-rinsing section 354, and a rinse section 356. The brush cleaning section 352 performs brush cleaning while applying a cleaning liquid to the back and front of the wafer W being transported. After cleaning, compressed air is sprayed to remove the liquid so as not to carry the cleaning liquid into the next process. The wafer W after brush cleaning is transported to the pre-rinsing section 354.

[0052] The pre-rinsing section 354 applies pre-rinsing liquid from the pre-rinsing liquid nozzle to the back and front of the conveyed wafer W while brush cleaning with a rotating brush. After cleaning, compressed air is sprayed to remove liquid. After that, the wafer W is conveyed to the rinsing section 356.

[0053] The rinsing unit 356 performs brush cleaning by a rotating brush while applying a rinse liquid from a rinse liquid nozzle to the back and surface of the wafer W. After cleaning, the wafer W after liquid removal is transferred to the circular belt conveyor 411 of the inspection unit 400 and conveyed to a predetermined receiving position of the inspection unit 400.

[0054] The inspection unit 400 inspects each cleaned wafer W for cracks, defects, adhesive residues, etc., and measures the thickness of each wafer W. The inspected wafer W is transferred to the wafer transfer robot 508 of the recovery unit 500 .

[0055] The wafer conveying robot 508 is a multi-jointed robot, and a freely rotatable hand 520 is provided at the front end. The wafer W is conveyed by being adsorbed and held by an adsorption pad 522 provided at the front end of the hand 520. The recovery unit 500 distinguishes between wafers with adhesive residue and defective wafers (cracked wafers, defective wafers, wafers with poor thickness, or end materials). The recovery unit 500 is mainly composed of two wafer recovery units 502A and 502B for recovering normal wafers, a defective wafer recovery unit 504 for recovering defective wafers, and an adhesive residue wafer recovery unit 506 for recovering wafers with adhesive residue.

[0056] Then, the wafer transfer robot 508 receives the wafer W from the inspection unit 400 and stores the wafer W in the cassettes of the wafer recovery units 502A, 502B, 504, and 506 based on the inspection results.

[0057] Next, the wafer separation unit 100 will be described in detail. Figure 2 1 is a top view of a peeling device 114 which is one of the main devices of the wafer peeling unit 100. Figure 3 It is a front view of the stripping device 114 and the hot water tank 112. In addition, Figure 4 This is a front view of a transfer device 118 which is one of the main devices of the wafer separation unit 100 .

[0058] First, the structure of the hot water tank 112 is described. Figure 3 ). The hot water tank 112 is formed in a rectangular box shape. Hot water 120 is stored inside the box. The chip W to be peeled off from the slicing base S is set in the hot water tank 112. In the hot water tank 112, the slicing base S bonded to the chip W is immersed in the hot water 120. At this time, most of the chip W protrudes outward from the water surface of the hot water 120 (protrudes upward). The hot water tank 112 is used to adjust the bonding strength of the adhesive bonding the chip W to the slicing base S. Therefore, it is sufficient to place at least the slicing base S and the contact area between the slicing base S and the chip W in the hot water 120. As described later, the surface of the chip W is supported by the arm 190 during the peeling action, so it is preferred that most of the chip W protrudes from the water surface of the hot water 120 and is located outside the hot water 120.

[0059] The hot water tank 112 is supplied with hot water or water from above, and has a heater H for heating the hot water 120 disposed therein, and a water level sensor 121 for managing the water level of the hot water 120 disposed on the upper portion. The heater H and the water level sensor 121 constitute a temperature control unit for controlling the temperature of the hot water.

[0060] The water level sensor 121 is preferably a pulse type liquid level sensor. The pulse type liquid level sensor irradiates the upper surface of the hot water 120 as the measurement target surface with an ultrasonic pulse, and measures the time until the ultrasonic pulse is reflected back. The pulse type liquid level sensor can also detect the amount of hot water 120 that has been reduced due to evaporation of water in the hot water tank 112 with high accuracy.

[0061] When the hot water 120 evaporates and the water level drops, the control device can supply water in a predetermined reduced amount each time. When absorbing water, the temperature adjustment unit can energize the heater H to further reduce the temperature change of the hot water 120.

[0062] In addition, the hot water tank 112 may be provided with a stirring blade (not shown). When the hot water 120 is circulated and flowed by the stirring blade, the occurrence of temperature unevenness is further suppressed.

[0063] In addition, as described later Figure 6 As shown by arrow K in FIG. 1 , hot water or water is supplied to the hot water tank 112 from near the center vertically above the wafer W (from the opposite side of the slicing base S with the center of the wafer W as a reference).

[0064] Next, the structure of the stripping device 114 is described (mainly Figure 2 , Figure 3 The peeling device 114 is a device for peeling the wafer W set in the hot water tank 112 from the slicing base S piece by piece. Figure 2 as well as Figure 3 As shown, a pair of first rails 136, 136 are provided near the right side of the hot water tank 112 along the longitudinal direction of the hot water tank 112. A first slide table 140 is slidably supported on the first rails 136, 136 via linear guides 138, 138.

[0065] A nut member 142 is fixed to the lower surface of the first slide table 140, and the nut member 142 is screwed with a screw rod 144 disposed between the pair of first guide rails 136, 136. Both ends of the screw rod 144 are supported to be rotatable, and a first feed motor (not shown) disposed at one end of the first guide rail 136, 136 is connected to one end of the screw rod 144. By driving the first feed motor (not shown), the screw rod 144 is rotated, and as a result, the first slide table 140 moves along the first guide rails 136, 136.

[0066] A peeling unit 150 for peeling the wafer W from the slicing base S is provided on the first slide table 140. The peeling unit 150 includes an arm guide 152 and an arm 190 supported by the arm guide 152 in a manner that allows for vertical sliding movement. The arm 190 can be moved up and down at a predetermined speed by a servo motor (not shown). The front end of the arm 190 is connected to a pad support plate 198. A pair of first peeling suction pads 200 and second peeling suction pads 201 are provided on the pad support plate 198 at a predetermined interval. The first peeling suction pad 200 and the second peeling suction pad 201 vacuum absorb and hold (absorption hold) the wafer W.

[0067] In addition, the pad support plate 198 is configured to be able to swing the first peeling suction pad 200 and the second peeling suction pad 201 in the front-rear direction.

[0068] The procedure of the peeling operation of the first peeling suction pad 200 and the second peeling suction pad 201 to peel the wafer W from the slicing base S is as follows.

[0069] First, the surface of the wafer W placed in the hot water tank 112 is held by the first peeling suction pad 200 and the second peeling suction pad 201. Next, the first peeling suction pad 200 and the second peeling suction pad 201 are swung a predetermined number of times in the front-back direction (the direction along the surface of the wafer W). Here, the adhesive bonding the wafer W to the slicing base S is softened by being immersed in the hot water 120. Therefore, the wafer W is peeled from the slicing base S by being swung a plurality of times.

[0070] In addition, the load applied to the arm 190 when the wafer W is peeled off from the slicing base S is measured by the strain gauge 192 (see Figure 3 ) is detected by the load detection unit. The load detection unit can also detect the size of the load based on the load current of the servo motor of the drive arm 190 on the basis of or instead of the strain gauge 192.

[0071] When the wafer W is peeled from the slicing base S, the servo motor is driven, and the first and second peeling suction pads 200 and 201 move upward at a predetermined speed while sucking the peeled wafer W. That is, the wafer W is transferred by the arm 190 .

[0072] When the first and second peeling suction pads 200 and 201 are lifted at a constant speed by the servo motor, the load (lifting load) of the arm 190 when the wafer W is transferred is detected by the load detection unit.

[0073] Next, the load detected by the load detection unit during peeling will be described. In addition, as described above, the load detection unit also detects the load when the wafer W is transferred, and the details thereof will be described later.

[0074] The magnitude of the load during peeling is related to the adhesion between the wafer W and the slicing base S.

[0075] The wafer W is preferably bonded to the slicing base S and supported in a self-supporting manner at the stage before peeling, and when the peeling action is started, it is preferably easily separated from the slicing base S by the stress from the arm 190. Such a preferred state is achieved by adjusting the adhesive force between the slicing base S and the wafer W. In other words, if the adhesive force is not properly adjusted, specifically, if the adhesive force is weak, the wafer floats or tilts from the slicing base before the peeling action, and the posture of the wafer W changes from the desired state, causing damage during peeling. On the contrary, if the adhesive force is strong, it is not possible to peel easily, and the peeling action needs to be repeated, or the wafer W is damaged during peeling.

[0076] By detecting the load of the arm 190 during peeling, the adhesive force can be indirectly monitored. It is suggested that when the load is abnormal (too small, too large), defects such as scratches and defects may occur on the wafer W. By using the data of the load of the arm 190 during peeling, it is possible to distinguish wafers W that may have defects (contain defects), or use this data as an indicator for the operation of the device. As a result, defects are less likely to occur, or the quality of the wafer W after singulation is improved, or the processing capacity is improved.

[0077] When the load during peeling is greater than the expected value, it is estimated that the bonding force between the wafer W and the slicing base S is too strong. When the bonding force is too strong, the peeling action sometimes takes time, or the peeling action is repeated. Furthermore, the operator needs to deal with the failure of peeling, which reduces the processing capacity. In this case, the temperature adjustment unit can adjust the temperature of the hot water 120 in a manner to reduce the bonding force. Whether to increase the temperature of the hot water 120 or to reduce the temperature of the hot water 120 can be appropriately determined according to the properties of the adhesive. As an example, when the load is too large, the temperature of the hot water 120 can be increased by the heater H to further soften the adhesive.

[0078] On the other hand, when the load during peeling is less than the expected value, it is estimated that the bonding force between the wafer W and the slicing base S is too small. When the bonding force is too small, the wafer W cannot maintain its posture before and / or during the peeling action, and sometimes a defect (scars, defects) occurs. In this case, the temperature adjustment unit can adjust the temperature of the hot water in a manner that increases the bonding force. As an example, the softening state of the adhesive can be adjusted in a manner that does not excessively increase the temperature of the hot water (hot water or water with a lower temperature can be added).

[0079] In addition, regarding the load during peeling, when the rising load is above a predetermined value and it is detected that the adhesive force is too strong, the peeling action can be stopped at that point in time without forcibly peeling, and the peeling action can be repeated, or an operator call can be made, etc. Thus, the wafer W can be protected without causing major damage.

[0080] Furthermore, regarding the load during peeling, a stage-by-stage judgment standard can be pre-set, and the subsequent processing can be changed accordingly. The judgment standard can be one or more. For example, the load size can be compared with the judgment standard, and based on this, the peeling can be performed again, or the peeling action can be stopped and an alarm message can be generated, or the temperature adjustment unit can be operated to adjust the temperature of the hot water 120.

[0081] Preferably, the judgment criteria are divided into a plurality of stages and predetermined, and subsequent processing is associated with the stage. For example, the judgment criteria may include a first threshold, a second threshold, and a third threshold. As an example of application, the following situations may be listed: the load size is substituted into each stage such as below the first threshold (normal: NM), greater than the first threshold and below the second threshold (abnormal: AOM1), greater than the second threshold and below the third threshold (abnormal: AOM2), and greater than the third threshold (abnormal: AOM3). In the case of AOM1, the stripping action is performed again, in the case of AOM2, the temperature of the hot water 120 is adjusted, and in the case of AOM3, the stripping action is terminated and a first alarm message is generated. The first alarm message may include an operator call to convey poor stripping.

[0082] Returning to the description of the structure of the peeling device 114. After the wafer W is peeled off, the first peeling suction pad 200 and the second peeling suction pad 201 stop at a predetermined handover position. The wafer W transferred to the handover position is handed over to the handover device 118 ( Figure 4 ) Thereafter, it is transferred to the shuttle conveyor 312 by the transfer device 118 and transported to the next process by the shuttle conveyor 312.

[0083] On the other hand, after the transfer of the wafer W is completed, the first and second peeling suction pads 200 and 201 are driven by the servo motor to move downward and return to their original peeling operation positions.

[0084] Next, the anti-falling plate 214 (mainly Figure 2 ) for explanation.

[0085] The wafer W held by the first and second peeling suction pads 200 and 201 is swung and peeled from the slicing base S. However, depending on the adhesive force between the slicing base S and the wafer W, the wafer W may be peeled from the slicing base S before the slicing is swung.

[0086] If the peeling is earlier than expected, the wafer W tilts or falls, it may sometimes cause obstacles to the adsorption and holding of the first peeling suction pad 200 and the second peeling suction pad 201. The anti-falling plate 214 is arranged in front of the first wafer W (between the wafer W and the arm 190 when viewed from above). The anti-falling plate 214 can prevent the wafer W from falling. In addition, the anti-falling plate 214 is set on the support plate 202 and can swing together with the first peeling suction pad 200 and the second peeling suction pad 201.

[0087] The first peeling suction pad 200 and the second peeling suction pad 201 are moved up and down through the passage 214a formed in the anti-falling plate 214. In addition, a single-piece removal adjustment part 216 ( Figure 2 ). The wafer W peeled from the slicing base S further passes through a slit provided in the single wafer removal adjustment section 216 and is transferred to a predetermined transfer position.

[0088] Fig.10 1 is an explanatory diagram of the function of the wafer taking-out adjustment section 216. The wafer taking-out adjustment section 216 includes a slit SLT whose width is adjusted so that the wafers transferred by the peeling unit 150 pass through one by one.

[0089] When the peeled wafer is transferred by the arm 190, the next wafer (second wafer) to be peeled may contact a part of the peeled wafer, and the surfaces may be closely attached to each other through water, and the second wafer may be transferred (bonded) together. The single wafer removal adjustment unit 216 uses the slit SLT to block the rise of the second and subsequent wafers W that are transferred.

[0090] At this time, since the second wafer hits the slit and falls, the surface may be damaged, cracked, or chipped, or may be damaged by edge chipping, microcracks, etc.

[0091] In the wafer peeling and cleaning apparatus of this embodiment, the blocking by the wafer removal adjustment unit 216 can be monitored by the load of the arm 190 when transferring the wafer W. The detection of the load when transferring the wafer W by the load detection unit will be described in detail below.

[0092] First, the load detection unit detects the load of the wafer W when it passes through the slit while being transferred while being held by the arm 190. If a load different from the usual load, such as a larger load, is detected when passing through the slit SLT, there is a high possibility that a defect has occurred in the wafer W or the "second wafer" W that is (supposed to be) peeled off next.

[0093] When bonding occurs, a load greater than usual is generated when passing through the slit SLT. In many cases, even if bonding occurs, the wafer W can pass through the slit SLT, so it is sometimes impossible to distinguish the wafer W from the wafer W that has been normally peeled only by this. However, as described above, there are many cases where some kind of defect (scar, defect) occurs on the wafer W before and after bonding occurs.

[0094] As already described, the load detection unit also detects the load when the wafer W is peeled off. The load data obtained by the load detection unit is typically data of time versus load. The load when peeling off and the load when passing through the slit SLT are extracted from the data. In other words, when there is a peak in the above data, the peak can be attributed to the load when peeling off or the load when passing through the slit SLT.

[0095] As an example, the attribution of the peak values ​​etc. is preferably performed according to the following steps. First, the rising (transfer) speed of the wafer by the arm 190 and the number of swings and time are configured to be constant. Then, by measuring the time from the signal of the start of the peeling operation, the current position of the wafer W can be grasped. Once the current position is grasped, since the initial position of the first wafer and the position of the single wafer removal adjustment unit 216 are fixed, it is possible to attribute each detected peak value etc. to the load during peeling or the load when passing through the slit SLT based on the data of time versus load.

[0096] The load on the chip when it is peeled off and the load on the chip when it passes through the slit are detected by the load detection unit, so that the history of the stress applied from the peeling of a chip to the passing of the slit is indirectly grasped based on the load on the arm 190, thereby detecting inherent defects and basic information for determining the process that may have caused the defect.

[0097] The wafer peeling and cleaning apparatus may generate second alarm information based on the magnitude of the load when the wafer passes through the slit SLT. The second alarm information includes detection information of the bonding state.

[0098] As described above, when bonding occurs, the wafer W passes through the slit in most cases. However, there is a possibility that a scratch, defect, etc. may occur on the wafer W or the second wafer W (or later wafers) to be peeled off. The second alarm information is information for recording and / or notifying that there is an abnormal load when passing through the slit SLT. Thus, it can be determined that a defective wafer W may have occurred.

[0099] In addition, the second alarm may include an "operator call" based on the abnormal load on the basis of or instead of the detection information of the bonding state. In addition, the transfer of the wafer W may be stopped based on the size of the load. In addition, the processing corresponding to each stage may be performed based on a reference divided into a plurality of pre-set stages. For example, the generation of the second alarm including the detection information of the bonding state and the operator call may also be selected and implemented based on the size of the load.

[0100] Here, the description of the peeling device 114 is temporarily ended. Next, based on Figure 4 The general structure of the delivery device 118 that receives the wafer W from the peeling device 114 is described. The delivery device 118 is a device that receives the wafer W peeled from the slicing base S by the first peeling suction pad 200 of the peeling device 114 and delivers it to the shuttle conveyor 312. Figure 4 As shown, the handover device 118 is arranged on the second slide table 240, and the second slide table 240 is slidably supported on the second guide rails 236 and 236 via the second linear guides 238 and 238. The second slide table 240 is screwed with a second screw 244 disposed between a pair of second guide rails 236 and 236. Both ends of the second screw 244 are supported to rotate freely, and a second feed motor (not shown) arranged at one end of the second guide rails 236 and 236 is connected to one end of the second screw 244. When the second feed motor (not shown) is driven, the second screw 244 moves along the second guide rails 236 and 236.

[0101] A support column 274 is vertically erected on the second slide table 240. A support frame 276 is vertically erected on the top of the support column 274, and a rotary actuator 278 is horizontally installed on the support frame 276. The output shaft of the rotary actuator 278 meshes with a drive gear 280, and the drive gear 280 meshes with a driven gear 282.

[0102] A support plate 296 is fixed to the front end of the rotating arm 294. The support plate 296 is provided with a transfer suction pad 300. The wafer W peeled by the first and second peeling suction pads 200 and 201 of the peeling device 114 is transferred to the transfer suction pad 300 after being transported to a predetermined transfer position.

[0103] The wafer W peeled from the slicing base S is lifted and transferred to a predetermined delivery position while being held by the first and second peeling suction pads 200 and 201. The delivery suction pad 300 waits at the delivery position. The delivery position is coaxial with the axis of the delivery suction pad 300.

[0104] When the wafer W is transferred to the handover position, the handover adsorption pad 300 advances a predetermined amount toward the wafer W at the handover position. As a result, the handover adsorption pad 300 is in close contact with the back side of the wafer W. Next, the handover adsorption pad 300 is driven, and the wafer W is held by adsorption by the handover adsorption pad 300. The fact that the wafer W is held by adsorption on the handover adsorption pad 300 is detected by a touch sensor (not shown) provided on the side of the handover adsorption pad 300. Then, according to the detection signal, the vacuum adsorption of the first peeling adsorption pad 200 is released, that is, air flows in. As a result, the wafer W is handed over from the first peeling adsorption pad 200 to the handover adsorption pad 300.

[0105] The transfer suction pad 300 receiving the wafer W retreats from the first peeling suction pad 200. The first peeling suction pad 200 receiving the wafer W begins to descend and returns to the original peeling operation position. When the transfer suction pad 300 retreats, the rotating arm 294 rotates 180 degrees. As a result, the wafer W is transferred to the upper position of the shuttle conveyor 312.

[0106] After the direction-changing rotary actuator 292 is driven, the delivery suction pad 300 moves forward a predetermined amount toward the shuttle conveyor 312. As a result, the wafer W is placed on the shuttle conveyor 312. When the wafer W is placed on the shuttle conveyor 312, the driving of the delivery suction pad 300 is stopped. Then, the delivery suction pad 300 moves backward from the shuttle conveyor 312.

[0107] After the wafer W is delivered, the delivery suction pad 300 returns to the original delivery position in the opposite manner to the above. On the other hand, the shuttle conveyor 312 that has delivered the wafer W is driven by a driving mechanism (not shown) to deliver the delivered wafer W to the next process. In addition, the drive of the wafer separation unit 100 is automatically controlled by a control device (not shown), and each component device operates based on a drive signal output from the control device.

[0108] Next, the details of the method of peeling the wafer W in the wafer peeling unit 100 will be described. In the state before starting, the first slide table 140 provided with the peeling unit 150 is located at the peeling operation start position of the first guide rail 136 .

[0109] The wafer W cut multiple times by the wire saw is set in the workpiece holding portion 122 provided in the hot water tank 112. Thus, the slicing base S to which the wafer W is bonded is immersed in the hot water 120 stored in the hot water tank 112. In addition, the wafer W can be set manually by an operator or automatically by a robot or the like. When the second slide table 240 is located at the start position of the handover operation, the peeling operation of the wafer W is started.

[0110] Figure 5 1 is an enlarged side view of a main part showing details of the peeling unit. Figure 6 This is an enlarged front view of the main part of the stripping unit. The anti-falling plate 214 is composed of a laminated plate in which a resin pressing plate 214-1 and a stainless steel plate 214-2 are laminated in order from the reference surface side, with the surface of the wafer W as the reference surface. The stainless steel plate 214-2 ensures the flatness of the pressing plate 214-1.

[0111] The first peeling suction pad 200 is arranged so that its center coincides with the center of the wafer W. The second peeling suction pad 201 is arranged at a lower side than the first peeling suction pad 200. In addition, the first peeling suction pad 200 is a flat vacuum pad suitable for conveying a workpiece with a flat surface. The first peeling suction pad 200 has a stronger suction force than the second peeling suction pad 201. In addition, the second peeling suction pad 201 is a bellows-type vacuum suction pad having a corrugated shape that expands and contracts in the axial direction.

[0112] The first peeling suction pad 200 and the second peeling suction pad 201 are used to absorb and maintain the wafer W as follows. First, the second peeling suction pad 201 contacts the surface of the wafer W. The second peeling suction pad 201 (1) is absorbed at a position lower than the center of the wafer W, and (2) the second peeling suction pad 201 is a bellows-type vacuum suction pad, so the base of the wafer W is pulled toward the anti-falling plate 214 side with the vicinity of the slicing base S as the center. In this way, the peeling operation is started reliably and efficiently.

[0113] The wafer W is bonded to the slicing base S by an adhesive, and is placed on the workpiece holding portion 122 of the hot water tank 112 after being placed on the upper side relative to the mounting plate M. The adhesive bonding the wafer W to the slicing base S is softened by being immersed in the hot water 120.

[0114] The wafer W is held so that the slicing base S side is immersed in the hot water 120 stored in the hot water tank 112, and the end portion on the opposite side (most of the wafer W) protrudes from the water surface to soften the adhesive. In this way, the wafer W can be peeled from the slicing base S. The wafer W is held so that the entirety of it is not immersed in the hot water 120, and most of it protrudes outward from the water surface of the hot water 120.

[0115] The parallel wafers W are arranged approximately in parallel with their surfaces facing each other. When the wafers W are tilted, water may be interposed between the wafers W, causing the wafers W to be closely attached to each other. In particular, the end portion on the side opposite to the side held by the slicing base S is in a free state without support by the slicing base S, so the wafers W are easily in contact with each other by only a slight tilt, and water vapor (water) is easily interposed between the wafers W under the influence of the hot water 120, which is easy to cause adsorption.

[0116] If the adjacent wafers W are in close contact, it will become an obstacle when peeling one by one. Therefore, in the past, air is supplied between the wafers W to separate the wafers W that are in close contact and perform the peeling operation. In addition, at this time, in order to improve the processing capacity, sometimes air is supplied not only between the first wafer and the second wafer, but also between the second and subsequent wafers waiting for the peeling operation (the second wafer and the third wafer, the third wafer and the fourth wafer, etc.), and the peeling preparation is carried out at the same time.

[0117] The wafer peeling and cleaning apparatus of the present embodiment is provided with a pair of air nozzles 80 and 81 as air supply units for supplying the above-mentioned air near the slicing base S. These air supply units are sometimes referred to as "air knives".

[0118] The air nozzles 80 and 81 are disposed on both sides of the lower side of the wafer W in a manner of sandwiching the wafer W and facing each other. That is, a pair of air nozzles 80 and 81 are configured to sandwich the wafer W and face each other in a direction roughly along the surface of the wafer W. In addition, the air nozzles 80 and 81 are configured to blow air violently from the lower side to the upper side from two directions of the side of the wafer W. In other words, the blowing direction of the air is the direction along the surface of the wafer W extending from the slicing base S, and is the direction from the water surface toward the protruding direction of the wafer W (from bottom to top). In other words, the direction from the water surface toward the protruding direction of the wafer W (from bottom to top) is the direction from the slicing base S side toward the wafer W side.

[0119] The surface of the wafer W is required to be smoother, and a wafer with a larger diameter is required. Therefore, the wafers W are more likely to come into contact with each other, and when they do come into contact, the adhesion force is more likely to be higher than before.

[0120] In such an environment, simply blowing air into the gap between the wafers may not be sufficient to separate the wafers W that are in contact or in close contact with each other.

[0121] Conventional air nozzles have a nozzle hole of about φ1 mm and blow air to one point. Therefore, if the gap between wafers is offset, the air cannot be blown to the desired position, and sometimes the peeling performance is reduced. The main cause of the gap between wafers is the change in the wafer posture caused by the softening of the adhesive.

[0122] In addition, when air is supplied not only between the first and second wafers, but also between the second and third wafers, the third and fourth wafers, and other wafers after the second wafer, the wafers after the third wafer that are arranged adjacently may also swing due to the air. In particular, the wafers are prone to swing near the end surface on the opposite side of the slicing base. In this case, the second wafer is pressed due to the swing of the wafers after the third wafer, and as a result, the first wafer may contact the second wafer. As a result, the processing capacity may be reduced.

[0123] In order to solve the above-mentioned problems, the air supply unit of the wafer peeling and cleaning apparatus according to the present embodiment has the following characteristic points.

[0124] First, the nozzle holes (air outlets) of the air nozzles 80 and 81 as air supply units are formed into slit shapes (long holes), and the long side direction thereof is substantially parallel to the direction (T direction) in which the surface of the wafer W is facing. Thus, even if the position of the wafer W changes slightly, air can be blown into the gap between the wafers W. In other words, robustness is improved.

[0125] Next, the nozzle holes are arranged in parallel in the circumferential direction of the wafer W (specifically, arranged up and down), as shown by arrows F1, arrow F2, arrow G1, and arrow G2, respectively, forming two rows, and further, the length of one side of the nozzle holes respectively arranged in the air nozzle 80 and the air nozzle 81 in the long side direction and / or the short side direction is shorter than the other side. Thus, even when air is blown between the second and subsequent wafers at the same time, the first wafer W and the second wafer W can be reliably separated. Therefore, the peeling action of the first wafer can be reliably performed. Furthermore, air can be blown simultaneously to the subsequent wafers W after the second wafer, so the processing capacity (number of wafers) per unit time is also improved.

[0126] Next, the shapes of the nozzle holes included in the air nozzles 80 and 81 will be described.

[0127] Figure 7 : is a perspective view showing the air nozzle 81. In addition, Fig.11 (a) is a top view showing the shape of the air nozzle 81. The nozzle holes 81-1 and 81-2 are arranged in such a way that their long side directions are along the thickness direction of the wafer W (the direction roughly parallel to the direction in which the surface of the wafer W faces), that is, the direction of the arrow T. Since the long hole shape is long in the direction of the arrow T, air can be blown to a wider range in the direction of the arrow T. Therefore, it is easier to blow air between the first wafer and the second wafer, and between the wafers after the second wafer at the same time.

[0128] In addition, the nozzle holes 81-1 and the nozzle holes 81-2 are arranged in parallel along the circumferential direction of the wafer W. In addition, although not shown in the figure, the shape and arrangement of the nozzle holes in the air nozzle 80 are the same as those of the air nozzle 81. It is preferred that the shapes of the nozzle holes of the air nozzle 80 and the air nozzle 81, which are arranged opposite to each other with the wafer W sandwiched therebetween, are the same. In this way, the wafers W can be separated from each other more uniformly.

[0129] The nozzle holes 81-1 and 81-2 are formed in the shape of long holes (slits), and band-shaped air is blown out from the nozzle holes 81-1 and 81-2. Therefore, even if the position of the wafer W is offset (especially in the direction of arrow T), there will be no contact or bonding state, and the two wafers can be separated well, and the second and subsequent wafers can also be separated at the same time to prepare for peeling. In addition, the improvement of the separation performance shortens the time of the peeling operation, does not cause damage to the wafer W, and can improve the overall manufacturing efficiency before being transported to the single-wafer cleaning unit 350 by the transfer device 118.

[0130] and become Figure 6 The nozzle hole 81-2 corresponding to the lower side G1 ( Figure 7 ) is arranged at a position (position in the T direction) where air can be blown mainly between the first sheet and the second sheet. There is no particular limitation on which side (G1 or G2) the nozzle hole for blowing air between the first sheet and the second sheet is arranged, but it is preferred that the nozzle hole 81-2 on the side closer to the water surface (lower side) is mainly used to blow air between the first sheet and the second sheet.

[0131] The side closer to the water surface of the hot water 120 (lower side) means closer to the slicing base S. The wafers W are separated and bonded one by one in the slicing base S. In principle, the width of the gap is maintained. When the nozzle hole that blows air from the vicinity of the water surface closer to the slicing base S is mainly used to blow air between the first wafer and the second wafer, the first wafer and the second wafer can be separated more reliably.

[0132] In addition, Fig.11 In (a), the length of the nozzle hole 81-2 in the long side direction (T direction) and the length (width) in the short side direction are respectively configured to be shorter than the nozzle hole 81-1 arranged in parallel. Therefore, if air is supplied to the nozzle hole 81-1 and the nozzle hole 81-2 at the same air pressure, the air blown out from the nozzle hole 81-2 becomes relatively strong. In addition, it is not necessary to configure both the long side direction and the short side direction to be shorter. If either one is the same as the nozzle hole 81-1, the other one can be shorter. Among them, when the length in the long side direction is shorter, it is preferred in that it is easy to aim at the gap between the first wafer and the second wafer and blow air.

[0133] The nozzle hole 81 is adjusted so that the air to be blown is directed to the gap between the first and second wafers W. On the other hand, the nozzle hole 81-1 is adjusted to a position where the air can be blown between the first and second wafers W and between the second and subsequent wafers. With such a configuration, air from both the nozzle hole 81-1 and the nozzle hole 81-2 is blown between the first and second wafers W. As a result, the air is blown more strongly between the first and second wafers W.

[0134] Figure 8 1 is an explanatory diagram showing the effect of air during peeling. When peeling wafers W one by one, aiming at the gaps between the first wafer W1 to be peeled, the second and subsequent wafers W2, W3, W4, and W5 adjacent thereto, air nozzles 80 and 81 are blown along the surface of wafer W (in the directions indicated by arrows F1, F2, G1, and G2, see FIG. 1 ). Figure 6 ), air is blown from both sides of the wafer W. The air is blown from the water surface side of the wafer W toward the protruding side (from the lower side to the upper side). Regarding the wafers after the second wafer, there is no limitation on which wafer the air is blown to, and the air may be blown to the wafer W6, the wafer W7, or between the wafers after that.

[0135] Air is supplied most strongly between the first wafer W1 and the second wafer W2. At the same time, air is also supplied between the second wafer W2 and the third wafer W3, and between the third wafer W3 and the fourth wafer W4, thereby improving the processing capacity. However, during the peeling operation, the adhesive bonding the wafer W to the slicing base S may soften over time, so the number of wafers supplied with air or the air volume may be reduced as the peeling operation proceeds.

[0136] For example, as shown by arrows L1, L2, L3, and L4, the air supply between the second and subsequent wafers may be gradually reduced. When peeling a wafer W, air may be introduced strongly between the first and second wafers, and then gradually reduced between the second and third wafers. If air is blown most strongly between the first and second wafers, the same strength may be used for the second and subsequent wafers, or the strength may be gradually reduced.

[0137] In particular, by supplying air between the first wafer W1 and the second wafer W2, and between the second wafer W2 and the third wafer W3, it is also possible to avoid the next waiting wafer W (the second wafer) of the lifted wafer W from being closely attached to the next waiting wafer W (the third wafer). Thus, the efficiency can be improved while the peeling operation is continued in sequence.

[0138] Fig.11 (b) is a top view of another embodiment of the nozzle hole. The length (width) of the nozzle hole 81-3 in the short side direction becomes wider at the position corresponding to the gap between the first and second wafers. On the other hand, the width becomes relatively narrower at the position corresponding to the gap between the subsequent second and subsequent wafers. When air of a predetermined pressure is supplied to the nozzle hole 81-3, the air is blown more strongly at the wide portion.

[0139] In addition, Fig.11 In (b), the length (width) in the short side direction increases continuously, but it may also increase in stages. As long as the air is blown more strongly between the first sheet and the second sheet, the shape of the long hole is not limited. On the other hand, in the case of forming Fig.11 In the case of a rectangular long hole shape as in (a), processing is easy, and as a result, it is easy to be cost-effective.

[0140] Next, the photographing section including the camera 123 will be described.

[0141] like Figure 6 As shown, the peeling device 114 is provided with a camera 123. The camera 123 captures the state of the wafer W during peeling. Specifically, the camera captures the region including the gap between the first wafer and the second wafer. Based on the obtained image, the width of the gap between the first wafer and the second wafer is measured by image processing. In this specification, a set of hardware and software including the camera 123 and realizing the function of measuring the width of the gap between the first wafer and the second wafer based on the image obtained by the camera 123 is defined as a capturing unit.

[0142] The imaging unit monitors the gap between the first wafer W and the second wafer W. Originally, a gap of a predetermined width is required between the first wafer W and the second wafer W. However, due to some reasons, the posture of the wafer W changes from the desired state, and sometimes the first wafer and the second wafer come into contact. When the first wafer and the second wafer come into contact, they sometimes fall into the above-mentioned bonding state. By using the imaging unit to monitor the above-mentioned gap, the occurrence of the above-mentioned adverse situation can be prevented, recorded, and notified.

[0143] The wafer stripping and cleaning device of this embodiment starts the stripping action of the first wafer when the width of the gap obtained from the image satisfies a predetermined reference. The predetermined reference refers to a reference value that can be judged as sufficient separation of the first wafer and the second wafer. Typically, it is a predetermined numerical range for the width of the gap.

[0144] The width of the gap can be measured based on the image acquired when the air is supplied. When the width of the gap satisfies the above-mentioned reference, it is inferred that the above-mentioned unfavorable situation (i.e., the first wafer is separated from the second wafer) has not occurred. After confirming this situation, the peeling action of the first wafer is started. In addition, as a specific embodiment, the gap between the wafers W is, for example, mostly about 0.1 mm, so the reference can be set within the range including the reference. Typically, the imaging unit detects the gap in 20 ms.

[0145] Fig. 9 1 is a schematic diagram of an image obtained by photographing the top of the wafer W using the camera 123. The wafer W is bonded to the slicing base S immersed in the hot water tank 112 and is held in a state where most of it protrudes from the water surface. The camera 123 is configured to be able to photograph an area including the circumferential surface of the first wafer, the circumferential surface of the second wafer, and the gap between them, among the portion protruding from the water surface.

[0146] Among the parts protruding from the water surface, the area to be photographed more preferably includes the circumferential surface of the wafer W and the gap therebetween, which is approximately symmetrical with the part held by the slicing base S with respect to the center of the wafer W. In short, it is the area of ​​the upper half of the wafer W. The reason is as follows.

[0147] First, the wafers W are likely to come into contact with each other at the portion protruding from the water surface. This is because the wafers are bonded and held at a predetermined interval on the slicing base S. Therefore, the wafers are likely to come into contact with each other at the portion (upper side) symmetrical to the portion (lower side) bonded and held on the slicing base S with respect to the center of the slicing base S (with the center as a reference).

[0148] When the camera unit is configured to be able to capture the image of the portion, the peeling operation can be started more reliably without the wafers contacting each other, thereby further reducing the frequency of defective products. The camera 123 is preferably disposed at a position where the above-mentioned image can be acquired, specifically, disposed further up, as an example, disposed at a position facing the slicing base S with the wafer W sandwiched therebetween, in other words, disposed at a position where the upper half of the wafer can be captured.

[0149] Next, a specific example of a method of measuring the gap based on the image acquired by the camera 123 is described. Fig. 9 , the gap C between the first wafer W1 and the second wafer W2 appears black as shown in the figure. This is because the light from the light source (not shown) is reflected by the circumferential surfaces of the wafers W1 and W2 and appears white, whereas the reflection does not occur in the gap. In addition, when the light from the light source is transmitted from the opposite side and the image is taken, the gap appears white and the circumferential surfaces of the wafers W1 and W2 appear black.

[0150] Back to Fig. 9 By measuring the width of the black portion (or the white portion when it is transmitted and photographed) based on the image, the width of the gap between the chips W1 and W2 can be obtained.

[0151] After the air is supplied, the separation of the first sheet and the second sheet is confirmed by the camera 123, and the peeling operation of the first sheet is started.

[0152] Typically, air is blown for a predetermined time before the first wafer is peeled off. Under this premise, it is preferably configured so that, if the width of the gap satisfies the above-mentioned criterion as a result of imaging, the air blowing is stopped before the time has elapsed.

[0153] In addition, the peeling unit typically starts the peeling action after blowing air for a predetermined time (eg, several seconds). Under this premise, it is preferably configured so that when the width of the gap meets the above-mentioned criteria as a result of the imaging, the peeling action is started before the elapsed time.

[0154] According to the above structure, even within the predetermined time, the blowing of air is stopped and the peeling operation is started, so that the blowing of air more than necessary can be suppressed. The operation of blowing air further before the predetermined time is reached even though the wafers W have been separated from each other can be suppressed.

[0155] In other words, since the air is blown only for a sufficient time, the time required for the peeling operation of one wafer can be shortened, and as a result, the processing capacity of the device (the number of wafers processed per unit time) is further improved.

[0156] After the air is supplied, if the camera determines that the first sheet and the second sheet are not sufficiently separated (the width of the gap does not meet the predetermined reference), the first sheet may be stopped from rising and the peeling operation may be performed again. In the past, the air supply was performed for a predetermined time of about 3 seconds, and the peeling operation was performed thereafter regardless of whether the sheets were actually separated.

[0157] In contrast, in the configuration in which the rise is stopped according to the determination result of the imaging unit, the rise is not performed when the wafer W is not separated, so there is no damage to the wafer W. In addition, since the peeling abnormality is confirmed before the peeling operation, the throughput can be increased and the productivity can be improved.

[0158] If the image capturing unit determines that the gap width does not satisfy a predetermined standard, the temperature of the hot water 120 in the hot water tank may be adjusted by the temperature control unit. The first sheet and the second sheet are in contact, typically when there is a problem in the adhesion between the slicing base S and the wafer W.

[0159] For example, if the adhesive force is too weak, the wafer W may not be able to maintain its posture, the wafer W may tilt, and the parallelism between the wafers may be impaired. In such a case, in order to maintain the adhesive force, the temperature of the hot water 120 may be adjusted. The specific temperature adjustment method depends on the characteristics of the adhesive, for example, the water temperature of the hot water may not be excessively increased.

[0160] If the water temperature of the hot water 120 is adjusted, after the first wafer is peeled off, when the second wafer which is lifted up in sequence and becomes the "first wafer" is peeled off, the width of the gap between the second wafer which was originally the "third wafer" is likely to meet the above-mentioned criteria. As a result, the peeling operation is performed more quickly as a whole, and the processing capacity of the device is further improved.

[0161] The photographing unit can also obtain an image when the wafer W is raised. Specifically, the wafer W can be photographed when passing through the slit SLT, and the occurrence of an undesirable situation headed by the bonding state can be recorded as image information. Based on the image information, the occurrence of a fault can be detected using image recognition technology to generate alarm information. In addition, the image information can be used as a record of the singulation process for each wafer. The image information can be used as basic information that helps to improve the quality of the singulated wafers.

[0162] In addition, the defect detection by the imaging unit and the detection by the load detection unit can be used together. The imaging unit is affected by the posture of the wafer W and the water vapor generated from the hot water 120, and sometimes cannot obtain sufficient information to help determine whether the wafers W are in contact with each other. By using the load detection unit together, it is easy to obtain sufficient information for more accurate determination.

[0163] For example, when two or more wafers W are transferred by the peeling unit 150 , this can be detected by imaging, or by the load detection unit based on the load of the slit SLT of the wafer removal adjustment unit 216 .

[0164] When the wafer W is peeled from the slicing base S, the imaging unit confirms that the first wafer and the second wafer are not in contact (the gap satisfies the reference), and the load detection unit confirms that there is no abnormality in the load during peeling.

[0165] By providing the imaging unit and / or the load detection unit, the frequency of occurrence of defects can be further reduced, or the occurrence of defects can be appropriately detected to improve the quality of singulated wafers.

[0166] (Other Implementation 1) Next, a wafer peeling and cleaning apparatus according to another embodiment disclosed in this specification will be further described.

[0167] The 1C wafer stripping and cleaning device disclosed in the present specification is a wafer stripping and cleaning device as follows: wafers cut from a crystal ingot to form a batch state are stripped one by one from a slicing base to be singulated, and the wafers after stripping are cleaned individually, wherein the wafer stripping and cleaning device comprises: a stripping unit, including an arm for holding the wafer and stripping the wafer from the slicing base; and a load detection unit, for detecting the load of the arm, wherein the load detection unit at least detects the load when the wafer is stripped from the slicing base.

[0168] The 1C wafer stripping and cleaning device is configured to have a load detection unit for detecting the load of the arm, and detects the load when the wafer is stripped from the slicing base, so that abnormalities during stripping can be accurately detected. The wafer is preferably bonded to the slicing base and supported in a self-supporting manner in the stage before stripping, and if the stripping action starts, it is preferably simply separated from the slicing base by the stress from the arm. This preferred condition can be achieved by adjusting the bonding force between the slicing base and the wafer. In other words, when the bonding force is not properly adjusted, specifically, when the bonding force is weak, before the stripping action, the wafer floats and tilts from the slicing base, and the posture changes from the desired state, and is damaged during stripping. On the contrary, when the bonding force is strong, it cannot be simply stripped, and the stripping action needs to be repeated, or the wafer is damaged during stripping.

[0169] The 1C wafer stripping and cleaning device can indirectly monitor the adhesive force by detecting the load of the arm during stripping. In the case where the load is abnormal (too small, too large), it can be confirmed that defects such as scratches and defects may have occurred on the wafer. The 1C wafer stripping and cleaning device can detect the load of the arm during stripping, so as long as the data is used, it is possible to distinguish wafers that may have defects (contain defects), or use the data as an indicator for the operation of the device. As a result, defects are less likely to occur, or the quality of the wafers after singulation is improved, or the processing capacity is improved.

[0170] The 2C wafer stripping and cleaning device disclosed in the present specification is a wafer stripping and cleaning device as follows: based on the 1C wafer stripping and cleaning device, the wafer stripping and cleaning device has a single wafer removal adjustment unit, the single wafer removal adjustment unit includes a slit, the width of the slit is adjusted to allow the wafers transferred by the stripping unit after the stripping to pass through one by one, and the load detection unit detects the load when the wafer stripped from the slicing base is transferred and passed through the slit while being held on the arm.

[0171] The 2C wafer stripping and cleaning device is equipped with a single wafer removal adjustment unit, so that a "single" wafer can be obtained more reliably. Furthermore, the load detection unit also detects the load when the wafer stripped from the slicing base passes through the slit of the single wafer removal adjustment unit, so the possibility of defectiveness at this stage can be detected.

[0172] When passing through the slit, if a load different from the usual load, such as a larger load, is detected, there is a high possibility of a defect. For example, when transferring a peeled wafer, sometimes the next wafer (the second wafer) to be peeled comes into contact with a part of it, and the surfaces are closely attached to each other through water, etc., and the second wafer is also transferred together (linking). When linking occurs, a load greater than usual is generated when passing through the slit. In most cases, even if linking occurs, the wafer can pass through the slit, but there are many cases where some kind of defect (scars, defects) occurs on the wafer (the first wafer, the second wafer) that has been linked. Since the 2C wafer peeling and cleaning device can monitor the load when passing through the slit, it can detect the possibility of defects that may occur when passing through the slit, including linking. As a result, defects are less likely to occur, or the quality of the wafer after singulation is improved.

[0173] The 3C wafer stripping and cleaning device disclosed in the present specification is a wafer stripping and cleaning device as follows: on the basis of the 2C wafer stripping and cleaning device, the stripping unit is configured to be able to transfer the wafer held on the arm at a predetermined speed, and the load detection part determines whether the detected load is the load during the stripping or the load when passing through the slit based on the current position of the wafer calculated based on the time from the start of the stripping performed by the stripping unit.

[0174] The 3C wafer peeling and cleaning device can distinguish whether the load detected by the load detection unit over time is the load during peeling or the load during slit passage. If the stress history of a wafer from peeling to slit passage is understood based on the load information, peeling and slit passage are distinguished, and the load size becomes the basic information for judging the possibility of defective occurrence in each stage.

[0175] This determination is made based on the current position of the wafer calculated based on the time from the start of peeling. By keeping the time and number of swinging actions during peeling and the wafer moving speed constant, the current position of the wafer can be grasped based on the time from the start of the peeling action. On this basis, if the initial position of the wafer as a fixed position and the position of the slit plate are taken into account, each detected peak can be attributed to peeling or slit passing based on the load value data of the time-to-stress.

[0176] The 4C chip stripping and cleaning device is a chip stripping and cleaning device as follows: on the basis of the 1C chip stripping and cleaning device to the 3C chip stripping and cleaning device, the chip stripping and cleaning device comprises: a hot water tank, configured to store hot water, at least immersing the above-mentioned slicing base in the above-mentioned hot water, and capable of adjusting the bonding strength of the adhesive bonding the above-mentioned chip to the above-mentioned slicing base; and a temperature regulating unit, regulating the temperature of the above-mentioned hot water, and the above-mentioned temperature regulating unit regulates the temperature of the above-mentioned hot water based on the size of the above-mentioned load during the above-mentioned stripping.

[0177] When the load during peeling is greater than the expected value, it is estimated that the bonding force between the wafer and the slicing base is too strong. When the bonding force is too strong, the peeling action sometimes takes time, or the peeling action is repeated. Furthermore, peeling cannot be performed and the operator needs to deal with it, which reduces the processing capacity. In this case, the temperature adjustment unit adjusts the temperature of the hot water in a manner that reduces the bonding force. Whether to increase or decrease the temperature of the hot water is implemented according to the properties of the adhesive. As an example, when the load is too large, the temperature of the hot water is increased to further soften the adhesive.

[0178] On the other hand, when the load during peeling is less than the expected value, it is estimated that the bonding force between the wafer and the slicing base is too small. When the bonding force is too small, the first and / or second wafers cannot maintain their posture before and / or during the peeling action, which sometimes hinders the holding of the arm, or the wafers contact each other and produce defects (scars, defects). In this case, the temperature control unit adjusts the temperature of the hot water in a way that increases the bonding force. As an example, the softening state of the adhesive is adjusted in a way that does not excessively increase the temperature of the hot water.

[0179] As described above, the 4C wafer stripping and cleaning apparatus is configured to adjust the temperature of the hot water according to the load during stripping, so that the processing capacity is further improved or the frequency of defective occurrence is further reduced.

[0180] The 5C chip stripping and cleaning device disclosed in the present specification is a chip stripping and cleaning device as follows: on the basis of the 1C chip stripping and cleaning device to the 3C chip stripping and cleaning device, the chip stripping and cleaning device comprises: a hot water tank, configured to store hot water, at least immersing the above-mentioned slicing base in the above-mentioned hot water, and capable of adjusting the bonding strength of the adhesive bonding the above-mentioned chip to the above-mentioned slicing base; and a temperature regulating unit, regulating the temperature of the above-mentioned hot water, and the judgment criteria for the size of the load during the above-mentioned stripping are pre-defined in at least two stages, and according to the stage to which the size of the above-mentioned load belongs, the temperature of the above-mentioned hot water is adjusted by the above-mentioned temperature regulating unit, and either the above-mentioned stripping action is performed again, or the above-mentioned stripping action is terminated and a first alarm message is generated.

[0181] The 5C wafer stripping and cleaning device prepares multiple stages of judgment criteria for the size of the load during stripping, and divides the corresponding processing according to each stage. As an example of preparing multiple stages of judgment criteria, it can be listed that the judgment criteria include a first threshold, a second threshold, and a third threshold. As a specific application, the size of the load is substituted into each stage such as below the first threshold (normal: NM), greater than the first threshold and below the second threshold (abnormal: AOM1), greater than the second threshold and below the third threshold (abnormal: AOM2), and greater than the third threshold (abnormal: AOM3), and the subsequent processing is separated. Specifically, it can be listed as: in the case of AOM1, the stripping action is performed again, in the case of AOM2, the temperature of the hot water is adjusted, and in the case of AOM3, the stripping action is terminated and the first alarm information is generated. As the first alarm information, for example, it can be listed as a so-called "operator call" that conveys poor stripping.

[0182] According to the 5C wafer stripping and cleaning apparatus, a pre-set appropriate process is performed according to the magnitude of the load during stripping, so that the processing capacity is further improved or the frequency of defective occurrence is further reduced.

[0183] The 6C wafer stripping and cleaning device disclosed in this specification is a wafer stripping and cleaning device that generates second alarm information based on the magnitude of the load when passing through the slit, based on the 2C wafer stripping and cleaning device or the 3C wafer stripping and cleaning device.

[0184] As described above, even when bonding occurs, a wafer may pass through the slit. However, scratches, defects, etc. may occur on the wafer or the next wafer that is (supposedly) waiting for the peeling operation. The second alarm information records and / or notifies that there is an abnormal load when passing through the slit, thereby determining that a defective wafer may have occurred.

[0185] (Other implementation 2) Next, a wafer peeling and cleaning apparatus according to another embodiment disclosed in this specification will be further described.

[0186] The 1A wafer stripping and cleaning device disclosed in the present specification is a stripping and cleaning device as follows: wafers cut from a crystal ingot to form a batch state are stripped one by one from a slicing base to be singulated, and the wafers after stripping are cleaned individually, wherein the wafer stripping and cleaning device comprises: a stripping adsorption pad for adsorbing and holding a surface of one side of the wafer; and at least one air supply unit, which is configured to be able to blow air along the surface of the wafer and from the slicing base side toward the wafer side, the air supply unit being configured to, when the adsorbed and held wafer is set as the first wafer, blow the air between the first wafer and the second wafer adjacent to the first wafer, and between the wafers adjacent to each other in sequence after the second wafer, and the air blown between the first wafer and the second wafer is stronger than the air blown between the wafers after the second wafer.

[0187] When the wafers cut from the ingot and held by the slicing base at one end (a part of the circumferential surface) are peeled off one by one in a state of being arranged one by one, the parallel wafers are arranged so that their surfaces face each other. The wafers are held by the slicing base in a state of being arranged roughly in parallel until peeling. However, when the posture of the wafers changes (for example, tilts) for some reason, the wafers may contact each other.

[0188] If the wafers are in contact with each other, water vapor etc. is sometimes present in the gap between the wafers to make the wafers close to each other. In particular, the end face on the side opposite to the side held by the slicing base is in a so-called free state, so the wafers are only slightly tilted and easily contact each other, which easily causes contact.

[0189] If adjacent wafers are in contact, it will become an obstacle when peeling one by one. Therefore, in the past, air was supplied between the wafers to separate the wafers and then perform the peeling operation. In addition, in order to improve the processing capacity per unit time of the peeling operation, sometimes air is not only supplied between the first and second wafers, but also between the second and third wafers, the third and fourth wafers, etc., and the preparation for peeling is carried out at the same time.

[0190] However, when air is blown strongly into the gap between wafers, the wafers may swing due to the adhesion force with the slicing base. Therefore, for example, if the swing of the third and subsequent wafers presses the second wafer, the first wafer may come into contact with the second wafer. That is, it is difficult to fully improve the processing capacity by only blowing air into the gap between wafers.

[0191] The 1A wafer stripping and cleaning device disclosed in this specification is configured such that the air blown between the first wafer and the second wafer is stronger than the air blown between the wafers after the second wafer, so that even when the air is blown between the wafers after the second wafer at the same time, the first wafer and the second wafer can be reliably separated. Therefore, the stripping operation of the first wafer can be reliably performed, and further, the air can be blown simultaneously for the subsequent wafers after the second wafer, so the processing capacity (number of wafers) per unit time is also improved.

[0192] The 2A wafer peeling and cleaning apparatus disclosed in this specification is the following peeling and cleaning apparatus: in addition to the 1A wafer peeling and cleaning apparatus, the air supply part has at least one long hole-shaped air blowing outlet in the thickness direction of the wafer.

[0193] The 2A wafer stripping and cleaning device has at least one long hole-shaped air blowing outlet in the thickness direction of the wafer, so it is easier to blow air between the first wafer and the second wafer and between the second and subsequent wafers at the same time. In addition, the air blowing outlet can have a direction substantially parallel to the direction in which the surface of the wafer faces as the long side direction.

[0194] When the adhesive force between the slicing base and the wafer is adjusted and typically weakened using hot water in a hot water tank, the wafer may move from a desired position (a position where the first wafer should be sucked and held, and a position where the second and subsequent wafers should wait).

[0195] The 2A wafer peeling and cleaning apparatus includes an air blowing port in the form of a long hole that is long in the arrangement direction of the wafers. Therefore, even if the position of the wafer is slightly deviated from the desired position, air can be blown into the target position.

[0196] The 3A wafer stripping and cleaning device disclosed in this specification is the following stripping and cleaning device: based on the 2A wafer stripping and cleaning device, the above-mentioned at least one long hole-shaped air blowing outlet includes a plurality of the above-mentioned long hole-shaped air blowing outlets.

[0197] The wafer cleaning device 3A can be provided with two long hole-shaped air blowing outlets, for example, so that one of the two outlets can be used mainly for blowing air between the first wafer and the second wafer, and the other of the two outlets can be used mainly for blowing air between the second wafer and the subsequent wafers. When configured in this way, it is easier to adjust the air blown between the first wafer and the second wafer to be stronger. At this time, it is preferred that each air blowing outlet is connected to an independent (may also include a regulator) compressor or air piping, etc., to supply air at approximately the same pressure.

[0198] The 4A chip stripping and cleaning device disclosed in this specification is the following chip stripping and cleaning device: on the basis of the 3A chip stripping and cleaning device, for at least two or more of the above-mentioned multiple long-hole-shaped air outlets, the lengths in the long side direction and / or the lengths in the short side direction are different from each other.

[0199] When the wafer stripping and cleaning device 4A has two long hole-shaped air outlets, the lengths in the long side direction and / or the lengths (widths) in the short side direction are different from each other. Typically, one is a smaller air outlet and the other is a larger air outlet.

[0200] When air is supplied at the same pressure, the air outlets having different sizes blow out air at different intensities, so that it is easier to blow air more strongly between the first sheet and the second sheet.

[0201] For example, if the smaller side (the stronger side) is used mainly to blow air between the first and second chips, and the larger side (the weaker side) is used mainly to blow air between the second and subsequent chips, the air blown between the first and second chips can be easily adjusted to be stronger.

[0202] When the two air outlets are connected to different compressors (of different systems) and supply air at the same pressure, the air outlet with a shorter length blows out air more strongly than the other air outlets. Therefore, the air outlet is suitable for blowing air mainly between the first sheet and the second sheet.

[0203] On the other hand, when the two air outlets are supplied with air from the same compressor or the like (the same pipe is branched, etc.), the longer air outlet may be used mainly to blow air between the first sheet and the second sheet.

[0204] The wafer stripping and cleaning device 4A has two long hole-shaped air outlets of different lengths, so the strength of the air blown out from each air outlet can be easily adjusted, and different functions can be easily given to each air outlet. That is, it is easy to realize a structure in which air is blown more strongly between the first wafer and the second wafer with a simpler structure.

[0205] The 5A chip stripping and cleaning device disclosed in the present specification is a chip stripping and cleaning device as follows: based on the 2A chip stripping and cleaning device, the at least one long hole-shaped air blowing outlet is constructed so that the length in the short side direction is shortened step by step and / or continuously in the direction in which the surface of the chip is facing, that is, in the direction from the first chip toward the second chip.

[0206] The air outlet of the air supply unit of the wafer stripping and cleaning device No. 5A has a length (width) in the short side direction that is shortened in stages and / or continuously in the direction from the first wafer toward the second wafer, so that by supplying compressed air to one air outlet only through one system, it is possible to apply a desired gradient to the intensity of the air blown out from the outlet. That is, if the air is supplied at a predetermined pressure, strong air is ejected in the wide width portion, and weak air is ejected in the narrow width portion. By adopting a simpler structure in which the width is narrowed in the direction from the first wafer toward the second wafer, it is possible to strongly blow air between the first wafer and the second wafer.

[0207] The 6A chip stripping and cleaning device disclosed in the present specification is a chip stripping and cleaning device as follows: on the basis of the 1A chip stripping and cleaning device, the at least one air supply unit includes a plurality of air supply units, and at least one pair of the air supply units among the plurality of air supply units are arranged opposite to each other with the chip clamped in a direction along the surface of the chip.

[0208] The wafer stripping and cleaning device 6A has, for example, two air supply units that are arranged opposite to each other in a direction along the surface of the wafer with the wafer sandwiched therebetween. In other words, the two air supply units are arranged on both sides of the end surface (circumferential surface) of the wafer, so that air can be evenly supplied from both sides, and each wafer can be stably separated. In addition, it is preferred to blow air evenly from both sides of the wafer. By blowing air evenly, the wafer can be separated more reliably.

[0209] For example, when the air blown from the air supply units has substantially the same strength, the numbers of the opposing air supply units are preferably the same. That is, it is preferable to provide a plurality of pairs of air supply units.

[0210] In addition, each air supply unit may include one air outlet, or may include two or more air outlets.

Claims

1. A wafer peeling and cleaning device, which peels wafers cut from a crystal ingot into a batch state one by one from a slicing base to separate them into individual wafers, and cleans the wafers after peeling, wherein: The wafer stripping and cleaning device comprises: a peeling unit including an arm for holding the wafer and peeling the wafer from the slicing base; and an imaging unit, wherein when the wafer held by the arm is a first wafer, the imaging unit is arranged at a position capable of imaging a region including a gap between the first wafer and a second wafer adjacent to the first wafer, When the imaging result shows that the width of the gap satisfies a predetermined reference, the peeling unit starts the peeling operation of the first wafer.

2. The wafer stripping and cleaning device according to claim 1, wherein: The wafer peeling and cleaning device includes a hot water tank configured to store hot water, and at least the slicing base is immersed in the hot water, so that the adhesive strength of the adhesive bonding the wafer to the slicing base can be adjusted. The wafer is held so as to protrude outward from a water surface of the hot water in a state where the slicing base is immersed in the hot water, and the imaging unit is disposed at a position capable of imaging the region in the protruding portion.

3. The wafer stripping and cleaning device according to claim 1 or 2, wherein: The imaging unit is disposed at a position capable of imaging the region including a circumferential surface of the wafer at a position symmetrical to a portion of the wafer held by the slicing base with respect to the center of the wafer.

4. The wafer stripping and cleaning device according to claim 3, wherein: The wafer peeling and cleaning device includes at least one air supply unit configured to blow air along the surface of the wafer extending from the slicing base and from the slicing base side toward the wafer side. The imaging unit images the area while the air is being blown.

5. The wafer stripping and cleaning device according to claim 4, wherein: The air supply unit is configured to blow the air for a predetermined period of time before the peeling operation of the first wafer, and If the image capturing result shows that the width of the gap satisfies the reference, the blowing of the air is stopped before the time elapses.

6. The wafer stripping and cleaning device according to claim 1, wherein: The wafer stripping and cleaning device comprises: a hot water tank configured to store hot water, wherein at least the slicing base is immersed in the hot water, and the adhesive force of the adhesive bonding the wafer to the slicing base can be adjusted; as well as A temperature adjustment unit adjusts the temperature of the hot water. The temperature adjustment unit adjusts the temperature when the width of the gap does not satisfy a predetermined reference as a result of the imaging.

7. The wafer stripping and cleaning device according to claim 1, wherein: The wafer peeling and cleaning device includes a single wafer taking-out adjustment unit including a slit, the width of the slit being adjusted so that the wafers transferred by the peeling unit after the peeling pass through one by one. The imaging unit images the wafer after being peeled from the slicing base when the wafer is transferred while being held by the arm and passes through the slit.

Images