Flow regulation method in substrate processing apparatus and substrate processing apparatus

Abstract

The present invention provides a flow rate adjusting method in a substrate processing apparatus and a substrate processing apparatus capable of suppressing variations in processing results among a plurality of liquid processing units. The flow adjusting method comprises a releasing step, a measuring step, a generating step and an adjusting step. In the releasing step, the mixed liquid is released under a plurality of releasing conditions in the first liquid processing part and the second liquid processing part. In the measurement step, a temperature sensor is used to measure the temperature of the mixed liquid for each processing condition. In the generation step, a correlation function between the temperature of the liquid mixture and the flow rate of sulfuric acid contained in the release condition is obtained for each of the first liquid processing unit and the second liquid processing unit on the basis of the temperature of the liquid mixture. A relational expression indicating the relationship of the flow rate of sulfuric acid when the temperature of the mixed liquid between the first liquid treatment unit and the second liquid treatment unit is the same is generated. In the adjustment step, the flow rate of sulfuric acid to the mixed liquid before mixing is adjusted in the second liquid treatment unit using the relational expression.

Description

Technical Field

[0001] The invention relates to a flow rate regulating method in a substrate processing device and the substrate processing device. Background Art

[0002] Conventionally, there is known a substrate processing apparatus for performing liquid processing by supplying a mixed liquid of sulfuric acid and hydrogen peroxide, that is, SPM (Sulfuric acid hydrogen peroxide mixture), to a substrate such as a semiconductor wafer.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2009-16497 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] The present invention provides a technology capable of suppressing variations in processing results among a plurality of liquid processing units.

[0008] Technical solutions for solving technical problems

[0009] A flow rate regulating method according to one embodiment of the present invention is a flow rate regulating method in a substrate processing device, wherein the substrate processing device includes a plurality of liquid processing units for supplying a mixed liquid of sulfuric acid and hydrogen peroxide to a substrate for liquid treatment, and the flow rate regulating method includes a release step, a measurement step, a generation step, and an adjustment step. In the release step, the mixed liquid is released under a plurality of release conditions in a first liquid processing unit and a second liquid processing unit selected from the plurality of liquid processing units. In the measurement step, a temperature sensor provided in each of the first liquid processing unit and the second liquid processing unit is used to measure the temperature of the mixed liquid according to each release condition. In the generation step, based on the measured temperature of the mixed liquid, a correlation function representing the correlation between the temperature of the mixed liquid and the flow rate of sulfuric acid contained in the release condition is obtained for each of the first liquid processing unit and the second liquid processing unit, and based on the correlation function, a relational expression representing the relationship between the flow rate of sulfuric acid when the temperature of the mixed liquid between the first liquid processing unit and the second liquid processing unit becomes the same is generated. In the adjustment step, the relational expression is used to adjust the flow rate of sulfuric acid before mixing to the mixed liquid in the second liquid processing unit.

[0010] Effects of the Invention

[0011] According to the present invention, it is possible to suppress variations in processing results among a plurality of liquid processing units. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1It is a diagram showing a schematic configuration of a substrate processing system according to an embodiment.

[0013] Figure 2 It is a diagram showing the structure of a processing unit according to an embodiment.

[0014] Figure 3 It is a diagram showing a specific configuration example of a processing liquid supply system in a substrate processing system according to an embodiment.

[0015] Figure 4 It is a flowchart showing the flow of flow rate adjustment processing according to the embodiment.

[0016] Figure 5 This is a diagram for explaining an example of derivation of a correlation function.

[0017] Figure 6 This is a diagram for explaining an example of generating a relational expression.

[0018] Description of Reference Numerals

[0019] 1. Substrate handling system

[0020] 16, 16O, 16R processing units

[0021] 18 Control Department

[0022] 19 Storage

[0023] 40 Nozzle

[0024] 72 Sulfuric acid supply path

[0025] 73 Flow meter

[0026] 74 Flow Regulator

[0027] 92 Hydrogen peroxide supply path

[0028] 79 Mixing Section

[0029] 80 Temperature Sensor

[0030] W chip. DETAILED DESCRIPTION

[0031] Hereinafter, a method for adjusting a flow rate in a substrate processing apparatus and a mode for implementing the substrate processing apparatus of the present invention (hereinafter referred to as an "embodiment") will be described in detail with reference to the accompanying drawings. The present invention is not limited to the embodiment.

[0032] Conventionally, there is known a substrate processing apparatus that supplies a mixed liquid of sulfuric acid and hydrogen peroxide, that is, SPM liquid, to substrates such as semiconductor wafers for liquid processing. In addition, the substrate processing apparatus includes a plurality of liquid processing units that supply SPM liquid to substrates for liquid processing.

[0033] In addition, in a substrate processing apparatus having a plurality of liquid processing units, a processing result difference among the plurality of liquid processing units may occur due to a difference in the temperature of the SPM liquid released in each of the plurality of liquid processing units. The temperature of the SPM liquid between the plurality of liquid processing units depends on the flow rates of sulfuric acid and hydrogen peroxide before mixing of the SPM liquid in each liquid processing unit, in particular, the flow rate of sulfuric acid before mixing of the SPM liquid.

[0034] Therefore, it is desired to provide a technology for adjusting the flow rate of sulfuric acid to the SPM liquid before mixing so as to suppress the variation in the temperature of the SPM liquid among a plurality of liquid processing units.

[0035] The substrate processing apparatus of the embodiment releases the SPM liquid under a plurality of release conditions in a first liquid processing unit and a second liquid processing unit selected from a plurality of liquid processing units. In addition, the substrate processing apparatus of the embodiment uses a temperature sensor provided in each of the first liquid processing unit and the second liquid processing unit to measure the temperature of the SPM liquid for each release condition for the first liquid processing unit and the second liquid processing unit.

[0036] In addition, the substrate processing apparatus of the embodiment obtains the correlation function between the temperature of the SPM liquid and the flow rate of sulfuric acid included in the release condition for the first liquid processing unit and the second liquid processing unit, respectively, based on the measured temperature of the SPM liquid. In addition, the substrate processing apparatus of the embodiment generates a relational expression representing the relationship of the flow rate of sulfuric acid when the temperature of the SPM liquid becomes the same between the first liquid processing unit and the second liquid processing unit based on the correlation function. Moreover, the substrate processing apparatus of the embodiment uses the relational expression to adjust the flow rate of sulfuric acid to the SPM liquid before mixing in the second liquid processing unit.

[0037] Thus, in the substrate processing apparatus of the embodiment, the correlation between the temperature of the SPM liquid and the flow rate of sulfuric acid is obtained for each liquid processing unit, and the flow rate of sulfuric acid before mixing the SPM liquid is adjusted in each liquid processing unit using the relationship of the flow rate of sulfuric acid at which the temperature of the SPM liquid becomes the same among the plurality of liquid processing units. Therefore, according to the substrate processing apparatus of the embodiment, the deviation of the temperature of the SPM liquid among the plurality of liquid processing units can be suppressed, and thus the deviation of the processing results among the plurality of liquid processing units can be suppressed.

[0038] <Overview of substrate processing system>

[0039] Reference Figure 1 , a schematic structure of a substrate processing system 1 (an example of a substrate processing apparatus) according to an embodiment will be described. Figure 1 1 is a diagram showing a schematic configuration of a substrate processing system 1 according to an embodiment. In order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis are defined to be orthogonal to each other, and the positive direction of the Z-axis is defined as the vertical upward direction.

[0040] like Figure 1 As shown, the substrate processing system 1 includes a feeding station 2 and a processing station 3. The feeding station 2 and the processing station 3 are arranged adjacent to each other.

[0041] The loading and unloading station 2 includes a carrier placement unit 11 and a conveying unit 12. The carrier placement unit 11 can hold a plurality of carriers C storing a plurality of semiconductor wafers W (hereinafter referred to as wafers W (an example of substrates)) in a horizontal state.

[0042] The conveying unit 12 is disposed adjacent to the carrier mounting unit 11, and has a substrate conveying device 13 and an interface 14 therein. The substrate conveying device 13 includes a substrate holding mechanism for holding a wafer W. In addition, the substrate conveying device 13 is capable of moving in the horizontal direction and the vertical direction, and rotating about the vertical axis, and conveys the wafer W between the carrier C and the interface 14 using the substrate holding mechanism.

[0043] The processing station 3 is provided adjacent to the transport unit 12. The processing station 3 includes a transport unit 15 and a plurality of processing units 16 (an example of a liquid processing unit). The plurality of processing units 16 are provided on both sides of the transport unit 15 in a row.

[0044] The conveying section 15 has a substrate conveying device 17 therein. The substrate conveying device 17 has a substrate holding mechanism for holding the wafer W. In addition, the substrate conveying device 17 can move in the horizontal direction and the vertical direction, and rotate around the vertical axis, and conveys the wafer W between the interface 14 and the processing unit 16 using the substrate holding mechanism.

[0045] The processing unit 16 performs a predetermined substrate process on the wafer W transported by the substrate transport device 17 .

[0046] In addition, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs for controlling various processes performed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0047] In addition, the program may be recorded in a computer-readable storage medium and installed from the storage medium to the storage unit 19 of the control device 4. Examples of computer-readable storage media include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

[0048] In the substrate processing system 1 configured as described above, first, the substrate conveying device 13 of the in-and-out station 2 takes out a wafer W from the carrier C placed on the carrier placement portion 11, and places the taken-out wafer W on the delivery portion 14. The wafer W placed on the delivery portion 14 is taken out from the delivery portion 14 by the substrate conveying device 17 of the processing station 3 and is carried into the processing unit 16.

[0049] After being processed by the processing unit 16, the wafer W sent to the processing unit 16 is sent out from the processing unit 16 by the substrate conveying device 17 and placed on the delivery portion 14. Then, the substrate conveying device 13 returns the processed wafer W placed on the delivery portion 14 to the carrier C of the carrier placement portion 11.

[0050] <Overview of Processing Unit>

[0051] Next, refer to Figure 2 , the structure of the processing unit 16 is described. Figure 2 FIG. 1 is a diagram showing the structure of the processing unit 16 of the embodiment. The processing unit 16 of the embodiment supplies a mixed solution of sulfuric acid and hydrogen peroxide, that is, SPM liquid, to the wafer W. Figure 2 As shown, the processing unit 16 includes a chamber 20 , a substrate holding mechanism 30 , a nozzle 40 (an example of a release portion), a recovery cup 50 , a temperature sensor 80 , and an SPM supply mechanism 70 .

[0052] The chamber 20 accommodates the substrate holding mechanism 30, the nozzle 40, the recovery cup 50, and the temperature sensor 80. A fan filter unit (FFU) 21 is provided on the top of the chamber 20. The FFU 21 forms a downflow in the chamber 20.

[0053] The substrate holding mechanism 30 includes a holding portion 31, a support portion 32, and a driving portion 33. The holding portion 31 horizontally holds the wafer W. The support portion 32 is a member extending in the vertical direction, and the root end portion is rotatably supported by the driving portion 33, and the front end portion horizontally supports the holding portion 31. The driving portion 33 rotates the support portion 32 around the vertical axis. The substrate holding mechanism 30 rotates the support portion 32 using the driving portion 33 to rotate the holding portion 31 supported by the support portion 32, thereby rotating the wafer W held by the holding portion 31.

[0054] The nozzle 40 supplies the SPM liquid to the wafer W. The nozzle 40 is connected to an SPM supply mechanism 70 to be described later, and discharges the SPM liquid supplied from the SPM supply mechanism 70 to the wafer W.

[0055] The recovery cup 50 is arranged to surround the holding part 31, and collects the SPM liquid scattered from the wafer W due to the rotation of the holding part 31. A drain port 51 is formed at the bottom of the recovery cup 50, and the SPM liquid collected by the recovery cup 50 is discharged to the outside of the processing unit 16 from the drain port 51. In addition, an exhaust port 52 is formed at the bottom of the recovery cup 50 to exhaust the gas supplied from the FFU 21 to the outside of the processing unit 16.

[0056] The temperature sensor 80 is disposed above the wafer W and adjacent to the nozzle 40 to measure the temperature of the SPM liquid on the surface of the wafer W. The temperature sensor 80 is provided in each of the plurality of processing units 16 , and thus the temperature of the SPM liquid on the surface of the wafer W can be measured for each of the plurality of processing units 16 .

[0057] <Configuration Example of Processing Liquid Supply System>

[0058] Next, refer to Figure 3 , a specific configuration example of the processing liquid supply system in the substrate processing system 1 according to the embodiment is described. Figure 3 It is a diagram showing a specific configuration example of a processing liquid supply system in the substrate processing system 1 according to the embodiment.

[0059] like Figure 3 As shown, the SPM supply mechanism 70 includes a sulfuric acid supply source 71, a sulfuric acid supply path 72 (an example of a first path), a flow meter 73, a flow regulator 74, and a valve 75 as a supply system of sulfuric acid (H2SO4). The sulfuric acid supply source 71 supplies sulfuric acid at a temperature set by the control unit 18. The sulfuric acid supply path 72 connects the sulfuric acid supply source 71 to a mixing unit 79 described later, and allows the sulfuric acid supplied from the sulfuric acid supply source 71 to flow.

[0060] The flow meter 73 is provided in the sulfuric acid supply path 72, and measures the flow rate of sulfuric acid flowing in the sulfuric acid supply path 72. The flow regulator 74 regulates the flow rate of sulfuric acid flowing in the sulfuric acid supply path 72. Specifically, the flow regulator 74 regulates the flow rate of sulfuric acid flowing in the sulfuric acid supply path 72 based on the set flow rate set by the control unit 18 so that the measured value of the flow meter 73 approaches the set flow rate. The valve 75 opens and closes the sulfuric acid supply path 72.

[0061] In addition, the SPM supply mechanism 70 includes a hydrogen peroxide supply source 91, a hydrogen peroxide supply path 92 (an example of a second path), a flow meter 93, a flow regulator 94, and a valve 95 as a supply system of hydrogen peroxide (H2O2). The hydrogen peroxide supply source 91 supplies hydrogen peroxide at normal temperature (room temperature). The hydrogen peroxide supply path 92 connects the hydrogen peroxide supply source 91 to the mixing unit 79 described later, and allows the hydrogen peroxide supplied from the hydrogen peroxide supply source 91 to flow.

[0062] The flow meter 93 is provided in the hydrogen peroxide supply path 92, and measures the flow rate of hydrogen peroxide flowing in the hydrogen peroxide supply path 92. The flow regulator 94 regulates the flow rate of hydrogen peroxide flowing in the hydrogen peroxide supply path 92. Specifically, the flow regulator 94 regulates the flow rate of hydrogen peroxide flowing in the hydrogen peroxide supply path 92 based on the set flow rate set by the control unit 18 so that the measured value of the flow meter 93 approaches the set flow rate. The valve 95 opens and closes the hydrogen peroxide supply path 92.

[0063] The SPM supply mechanism 70 includes a mixing unit 79. The mixing unit 79 mixes sulfuric acid supplied from the sulfuric acid supply path 72 and hydrogen peroxide supplied from the hydrogen peroxide supply path 92 at a predetermined mixing ratio to generate SPM liquid as a mixed liquid. The generated SPM liquid is supplied to the nozzle 40 and discharged from the nozzle 40.

[0064] <Flow Control Processing>

[0065] Next, refer to Figure 4 Next, the content of the flow rate adjustment process of sulfuric acid before mixing with the SPM liquid executed by the control unit 18 of the embodiment will be described. Figure 4 It is a flowchart showing the flow of flow rate adjustment processing according to the embodiment.

[0066] Figure 4 The flow rate adjustment process shown is performed, for example, before substrate processing (liquid processing) is performed on the wafer W using the processing unit 16. Figure 4 The flow rate adjustment process shown may be performed at any timing other than the timing before substrate processing (liquid processing), at a designated timing, at a periodic timing, or the like.

[0067] First, the control unit 18 selects a reference processing unit (an example of the first liquid processing unit) and a target processing unit (an example of the second liquid processing unit) from the plurality of processing units 16 (step S101). The reference processing unit refers to a processing unit 16 that serves as a reference for the flow rate regulation of sulfuric acid among the plurality of processing units 16. The target processing unit refers to a processing unit 16 that serves as a target for the flow rate regulation of sulfuric acid among the plurality of processing units 16. In the following description, the reference processing unit is referred to as "processing unit 16R" and the target processing unit is referred to as "processing unit 16O".

[0068] Next, the control unit 18 sets one of the multiple release conditions used when releasing the SPM liquid in the processing units 16R and 16O (step S102). The multiple release conditions are conditions composed of the temperature of sulfuric acid, the flow rate of sulfuric acid, and the flow rate of hydrogen peroxide. Among the multiple release conditions, at least one of the temperature of sulfuric acid, the flow rate of sulfuric acid, and the flow rate of hydrogen peroxide is different from each other. The control unit 18 sets the temperature of sulfuric acid, the flow rate of sulfuric acid, and the flow rate of hydrogen peroxide included in one of the multiple release conditions to the sulfuric acid supply source 71, the flow regulator 74, and the flow regulator 94 in the processing units 16R and 16O.

[0069] The control unit 18 uses the substrate transport device 17 (see Figure 1 ) The wafer W is sent into the chambers 20 of the processing units 16O and 16R, and the wafer W is held by the holding portion 31 of the substrate holding mechanism 30. The wafer W may be a product wafer or a dummy wafer for flow rate adjustment. Afterwards, the control unit 18 rotates the holding portion 31 around the vertical axis using the driving unit 33 in the processing units 16O and 16R, thereby rotating the wafer W.

[0070] Next, in a state where one of the plurality of processing conditions is set for the processing units 16R and 16O, the control unit 18 opens the valves 75 and 95 in the processing units 16R and 16O to discharge the SPM liquid from the nozzle 40 toward the wafer W (step S103). When the SPM liquid starts to be discharged toward the wafer W, the flow regulator 74 of the processing units 16R and 16O adjusts the flow rate of sulfuric acid flowing through the sulfuric acid supply path 72 so that the measured value of the flow meter 73 approaches the set flow rate. In addition, the flow regulator 94 of the processing units 16R and 16O adjusts the flow rate of hydrogen peroxide flowing through the hydrogen peroxide supply path 92 so that the measured value of the flow meter 93 approaches the set flow rate.

[0071] Next, the control unit 18 obtains the temperature of the SPM liquid in the process unit 16R and the temperature of the SPM liquid in the process unit 16O from the temperature sensors 80 of the process units 16R and 16O (step S104). The control unit 18 obtains the temperature of the SPM liquid in the process unit 16R and the temperature of the SPM liquid in the process unit 16O for each release condition.

[0072] Next, the control unit 18 determines whether all release conditions have been set for the processing units 16R and 16O (step S105). If not (step S105: No), the control unit 18 sets the next release condition for the processing units 16R and 16O (step S106). Then, the process returns to step S103.

[0073] On the other hand, when all release conditions have been set (step S105: Yes), the control unit 18 obtains a correlation function between the temperature of the SPM liquid and the flow rate of sulfuric acid included in the release conditions for each of the processing units 16R and 16O based on the temperature of the SPM liquid (step S107).

[0074] Figure 5 The inventors of the present application conducted intensive research and found that the relationship between the temperature of the SPM liquid in each treatment unit 16, the temperature of sulfuric acid before mixing, and the flow rates of sulfuric acid and hydrogen peroxide before mixing can be expressed by the following formula (1).

[0075] (Temperature of the SPM liquid in each treatment unit 16) = a + b (Temperature of sulfuric acid before mixing) + c (Flow rate of hydrogen peroxide before mixing) / {(Flow rate of sulfuric acid before mixing) + (Flow rate of hydrogen peroxide before mixing)} ... (1)

[0076] Here, a, b, and c are coefficients obtained by analysis or experiment.

[0077] As can be seen from equation (1), there is a correlation between the temperature of the SPM liquid in each treatment unit 16 and the inverse of the flow rate of sulfuric acid (sulfuric acid flowing through the sulfuric acid supply path 72 ) before mixing with the SPM liquid.

[0078] Therefore, the control unit 18 plots the temperature of the SPM liquid and the flow rate of sulfuric acid included in the corresponding release condition on a two-dimensional plane with the temperature of the SPM liquid of each processing unit 16 and the inverse of the flow rate of sulfuric acid before mixing with the SPM liquid as each dimension. Then, the control unit 18 obtains an approximate straight line when the temperature of the SPM liquid and the flow rate of sulfuric acid are plotted on the two-dimensional plane for each processing unit 16R and 16O as a correlation function between the temperature of the SPM liquid of each processing unit 16 and the flow rate of sulfuric acid before mixing with the SPM liquid. Specifically, the control unit 18 can obtain the correlation function between the temperature of the SPM liquid and the flow rate of sulfuric acid before mixing with the SPM liquid for each processing unit 16R and 16O using the approximate straight line represented by the following equations (2) and (3).

[0079] (Temperature of the SPM liquid in the treatment unit 16R) = α0 + α1·1 / (Flow rate of sulfuric acid before mixing) (2)

[0080] (Temperature of the SPM liquid in the treatment unit 160) = α2 + α3·1 / (Flow rate of sulfuric acid before mixing) (3)

[0081] exist Figure 5In FIG. 1 , the correlation line 110 is a straight line representing the correlation function between the temperature of the SPM liquid in the processing unit 16R and the flow rate of sulfuric acid before mixing with the SPM liquid (i.e., the correlation function of equation (2)). Figure 5 In FIG. 1 , the correlation line 111 is a line representing the correlation function between the temperature of the SPM liquid in the processing unit 160 and the flow rate of sulfuric acid before mixing with the SPM liquid (ie, the correlation function of equation (3)).

[0082] return Figure 4 Next, the control unit 18 generates a relational expression representing the relationship between the flow rates of sulfuric acid when the temperatures of the SPM liquids are the same between the processing unit 16R and the processing unit 16O based on the obtained correlation function (correlation lines 110 and 111) (step S108).

[0083] Figure 6 is a diagram for explaining an example of generating a relational expression. The control unit 18 generates a correlation line 110 and a correlation line 111 (see Figure 5 ) to obtain the flow rate of sulfuric acid when the temperature of the SPM liquid becomes the same between the processing unit 16R and the processing unit 16O. For example, the control unit 18 sets the correlation lines 110 and 111 (refer to Figure 5 ) to obtain the values ​​Fr1 and Fo1 corresponding to the temperature T1 of the SPM fluid. In addition, the control unit 18 generates the correlation lines 110 and 111 (see Figure 5 ) to obtain the values ​​Fr2 and Fo2 corresponding to the temperature T2 of the SPM liquid.

[0084] Then, if Figure 6 As shown, the control unit 18 plots the values ​​Fr1, Fo1 and the values ​​Fr2, Fo2 on a two-dimensional plane with the inverse of the flow rate of sulfuric acid before mixing in the processing unit 16R and the inverse of the flow rate of sulfuric acid before mixing in the processing unit 16O as the dimensions. Then, the control unit 18 generates an equation representing an approximate straight line when the values ​​Fr1, Fo1 and the values ​​Fr2, Fo2 are plotted on the two-dimensional plane as a relational expression. Specifically, the control unit 18 can generate a relational expression representing the relationship of the flow rate of sulfuric acid when the temperature of the SPM liquid becomes the same between the processing unit 16R and the processing unit 16O using the approximate straight line represented by the following equation (4).

[0085] 1 / (flow rate of sulfuric acid before mixing in treatment unit 16R)=β0+β1·1 / (flow rate of sulfuric acid before mixing in treatment unit 16O)...(4)

[0086] return Figure 4Next, the control unit 18 uses the relational expression to adjust the flow rate of sulfuric acid to the SPM liquid before mixing in the processing unit 16O. That is, the control unit 18 applies the "specified value" set for the set flow rate in the flow regulator 74 of the processing unit 16R to the relational expression to calculate the adjustment value of the set flow rate in the flow regulator 74 of the processing unit 16O (step S109). As the "specified value", for example, a value specified by the processing scheme for substrate processing (liquid processing) of the wafer W can be used. The specified value may also be a value set in common for the set flow rates in the flow regulators 74 of the processing units 16R and 16O.

[0087] Next, the control unit 18 changes the set flow rate in the flow regulator 74 of the processing unit 16O from the "prescribed value" to the adjustment value calculated in step S109 (step S110). When the set flow rate is changed, the flow regulator 74 of the processing unit 16O adjusts the flow rate of sulfuric acid flowing in the sulfuric acid supply path 72 so that the measured value of the flow meter 73 is close to the changed set flow rate (i.e., the adjustment value). Here, the adjustment value is a value calculated based on a relationship formula representing the relationship between the flow rate of sulfuric acid when the temperature of the SPM liquid becomes the same between the processing unit 16R and the processing unit 16O. Therefore, the control unit 18 can adjust the flow rate of sulfuric acid (i.e., sulfuric acid before mixing with the SPM liquid) flowing in the sulfuric acid supply path 72 of the processing unit 16O so that the temperature of the SPM liquid is the same between the processing unit 16R and the processing unit 16O.

[0088] In this way, the control unit 18 obtains the correlation between the temperature of the SPM liquid and the flow rate of sulfuric acid for each of the processing units 16R and 16O, and generates a relationship equation for the flow rate of sulfuric acid that makes the temperature of the SPM liquid the same between the processing units. Then, the control unit 18 uses this relationship equation to adjust the flow rate of sulfuric acid before mixing with the SPM liquid in the processing unit 16O. Therefore, the deviation of the temperature of the SPM liquid between the processing unit 16R and the processing unit 16O can be suppressed, and thus the deviation of the processing results between the processing unit 16R and the processing unit 16O can be suppressed.

[0089] After changing the set flow rate in the flow regulator 74 of the processing unit 16O, the control unit 18 corrects the measured value of the flow meter 73 of the processing unit 16O to the "predetermined value" (step S111). This can eliminate the error in the measured value of the flow meter 73 caused by individual differences in the flow meters 73 between the processing units 16.

[0090] As described above, the flow rate regulating method of the embodiment is a flow rate regulating method in a substrate processing device (as an example, a substrate processing system 1), the substrate processing device includes a plurality of liquid processing parts (as an example, a processing unit 16) for supplying a mixed liquid of sulfuric acid and hydrogen peroxide (as an example, an SPM liquid) to a substrate (as an example, a wafer W) for liquid treatment, and the flow rate regulating method includes a release step, a measurement step, a generation step, and a regulation step. In the release step, the mixed liquid is released under a plurality of release conditions in a first liquid processing part (as an example, a processing unit 16R) and a second liquid processing part (as an example, a processing unit 16O) selected from the plurality of liquid processing parts. In the measurement step, a temperature sensor (as an example, a temperature sensor 80) provided in each of the first liquid processing part and the second liquid processing part is used to measure the temperature of the mixed liquid according to each release condition. In the generation step, based on the measured temperature of the mixed liquid, a correlation function (as an example, equations (2) and (3)) representing the correlation between the temperature of the mixed liquid and the flow rate of sulfuric acid included in the release condition is obtained for each of the first liquid processing unit and the second liquid processing unit, and based on the correlation function, a relational expression (as an example, equation (4)) representing the relationship between the flow rates of sulfuric acid when the temperatures of the mixed liquids are the same between the first liquid processing unit and the second liquid processing unit is generated. In the adjustment step, the relational expression is used to adjust the flow rate of sulfuric acid to the mixed liquid before mixing in the second liquid processing unit. Thus, according to the flow rate adjustment method of the embodiment, it is possible to suppress the deviation of the processing results between multiple liquid processing units.

[0091] In addition, each of the plurality of liquid processing units may have a first path (for example, a sulfuric acid supply path 72), a second path (for example, a hydrogen peroxide supply path 92), a mixing unit (for example, a mixing unit 79), a release unit (for example, a nozzle 40), a flow meter (for example, a flow meter 73) and a flow regulator (for example, a flow regulator 74). The first path is for sulfuric acid to flow. The second path is for hydrogen peroxide to flow. The mixing unit mixes sulfuric acid from the first path and hydrogen peroxide from the second path to generate a mixed liquid. The release unit releases the mixed liquid generated by the mixing unit to the substrate. The flow meter is disposed in the first path to measure the flow rate of sulfuric acid flowing in the first path. The flow regulator is disposed in the first path to adjust the flow rate of sulfuric acid flowing in the first path based on a set set flow rate so that the measured value of the flow meter is close to the set flow rate. In addition, in the adjustment step, the prescribed value set for the set flow rate in the flow regulator of the first liquid processing unit is applied to the relational expression to calculate the adjustment value of the set flow rate in the flow regulator of the second liquid processing unit. Furthermore, in the adjustment step, the flow rate of sulfuric acid flowing in the first path of the second liquid processing unit may be adjusted by changing the set flow rate in the flow regulator of the second liquid processing unit from a specified value to an adjusted value. Thus, according to the flow rate adjustment method of the embodiment, it is possible to suppress the deviation of the treatment results between the plurality of liquid processing units.

[0092] In addition, in the measuring step, the temperature of the mixed liquid on the surface of the substrate may be measured using a temperature sensor disposed adjacent to the release portion. Thus, according to the flow rate adjustment method of the embodiment, the temperature of the mixed liquid on the surface of the substrate can be easily measured.

[0093] <Modification>

[0094] In the above-mentioned embodiment, the temperature sensor 80 is arranged adjacent to the nozzle 40, but the arrangement position of the temperature sensor 80 is not limited thereto. For example, the temperature sensor 80 may be arranged in the piping connecting the mixing section 79 and the nozzle 40 or in the nozzle 40. In this case, in the measuring step, the temperature of the SPM liquid before being released from the nozzle 40 may be measured using the temperature sensor 80 arranged in the piping connecting the mixing section 79 and the nozzle 40 or in the nozzle 40. Thus, the temperature of the mixed liquid before being released can be easily measured.

[0095] The embodiments disclosed herein are illustrative and non-restrictive in all aspects. In fact, the above embodiments can be implemented in many ways. In addition, the above embodiments can also be omitted, replaced, and changed in various ways without departing from the scope of the invention and its purpose.

Claims

1. A flow rate regulation method in a substrate processing device, characterized in that: The substrate processing device includes a plurality of liquid processing units for supplying a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate for liquid processing. The flow regulation method comprises: A releasing step, in a first liquid processing part and a second liquid processing part selected from the plurality of liquid processing parts, releasing the mixed liquid under a plurality of releasing conditions; a measuring step of measuring the temperature of the mixed liquid according to each of the release conditions using a temperature sensor provided in each of the first liquid processing section and the second liquid processing section; A generating step of obtaining a correlation function between the temperature of the mixed liquid and the flow rate of sulfuric acid included in the release condition for each of the first liquid processing section and the second liquid processing section based on the measured temperature of the mixed liquid, and generating a relational expression representing the relationship between the flow rate of sulfuric acid when the temperature of the mixed liquid becomes the same between the first liquid processing section and the second liquid processing section according to the correlation function; and The step of adjusting the flow rate of sulfuric acid to the mixed liquid before mixing is adjusted in the second liquid processing section using the relational expression.

2. The flow rate regulation method according to claim 1, characterized in that: Each of the plurality of liquid processing sections comprises: A first path for sulfuric acid to flow; a second pathway for hydrogen peroxide to flow; a mixing unit that mixes the sulfuric acid from the first path and the hydrogen peroxide from the second path to generate a mixed liquid; and a releasing part that releases the mixed liquid generated by the mixing part to the substrate, a flow meter provided in the first path and measuring a flow rate of sulfuric acid flowing in the first path; and a flow regulator provided in the first path, regulating the flow rate of sulfuric acid flowing in the first path based on a set flow rate so that the measured value of the flow meter approaches the set flow rate, In the adjustment step: applying a prescribed value set for the set flow rate in the flow rate regulator of the first liquid processing section to the relational expression to calculate a regulation value for the set flow rate in the flow rate regulator of the second liquid processing section, The set flow rate in the flow regulator of the second liquid processing section is changed from the prescribed value to the adjustment value, thereby adjusting the flow rate of sulfuric acid flowing through the first path of the second liquid processing section.

3. The flow rate regulation method according to claim 2, characterized in that: In the adjustment step, after the set flow rate is changed, the measured value of the flow meter of the second liquid processing section is corrected to the predetermined value.

4. The flow rate regulation method according to claim 2, characterized in that: In the measuring step, the temperature of the mixed liquid on the surface of the substrate is measured using the temperature sensor disposed adjacent to the release portion.

5. The flow rate regulation method according to claim 2, characterized in that: In the measuring step, the temperature of the mixed liquid before being released from the release section is measured using the temperature sensor disposed in a pipe connecting the mixing section and the release section or in the release section.

6. A substrate processing device, characterized in that: include: A plurality of liquid treatment units for supplying a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate for liquid treatment; a temperature sensor disposed in each of the plurality of liquid processing parts to measure the temperature of the mixed liquid; and Control Department, The control unit enables each unit to execute the flow rate adjustment method. The flow regulation method comprises: a step of releasing the mixed liquid under a plurality of release conditions in a first liquid processing unit and a second liquid processing unit selected from the plurality of liquid processing units; A step of measuring the temperature of the mixed liquid for each of the release conditions using a temperature sensor provided in each of the first liquid processing section and the second liquid processing section; The steps of obtaining, for each of the first liquid processing unit and the second liquid processing unit, a correlation function between the temperature of the mixed liquid and the flow rate of sulfuric acid included in the release condition based on the measured temperature of the mixed liquid, and generating, based on the correlation function, a relational expression representing the relationship between the flow rate of sulfuric acid when the temperature of the mixed liquid becomes the same between the first liquid processing unit and the second liquid processing unit; and A step of adjusting, in the second liquid processing section, a flow rate of sulfuric acid to the mixed liquid before mixing, using the relational expression.

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