Broadband frequency conversion SIP assembly
By using the combination of InPHBT process frequency conversion multi-function chip and alumina ceramic substrate in the frequency conversion component, combined with SIP technology and high-lead soldering pillars, the existing frequency conversion components have solved the problems of low integration and average performance, and achieved high integration. , low power consumption and miniaturized broadband frequency conversion SIP components.
Patent Information
- Application Number
- CN202411349885.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-26
- Publication Date
- 2025-01-21
- Estimated Expiration
- Not applicable · inactive patent
AI Technical Summary
The existing frequency conversion components have low integration, simple circuit structure, and average performance, especially the spurious level. The ultra-wideband frequency conversion components using multi-chip assembly technology have low integration and large size.
Adopt inverter multifunctional chips based on the InphbT process, combined with alumina ceramic substrates, campaigns and lids, and the use of system -level packaging (SIP) technology and high lead welded pillars, realizing high -integrated broadband inverter SIP components And small.
It has achieved high integration, low power consumption, low spurious and miniaturized broadband frequency conversion components, significantly improved the spurious level, reduced the number and size of chips, and saved more than 50% of the cost.
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Figure CN119340318A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the field of microwave technology, and in particular relates to a broadband frequency conversion SIP component. Background Art
[0002] Frequency conversion components are an important part of modern radar systems, which realize the frequency conversion of radio frequency signals. At present, with the integration of detection, interference, reconnaissance, and communication, higher performance requirements are put forward for frequency conversion components, such as high bandwidth, low spurious, and small size. The frequency conversion components in the existing technology are not highly integrated, the circuit structure is simple, and the performance, especially the spurious level, is average. Ultra-wideband frequency conversion components using multi-chip assembly technology are also not highly integrated and are large in size. Summary of the invention
[0003] The present invention overcomes the disadvantage of low integration in the prior art and proposes a broadband variable frequency SIP component, which has the advantages of wide instantaneous bandwidth, high spurious, high dynamic, low power consumption, high integration and miniaturization, providing a new idea for subsequent technical personnel in this field to design broadband variable frequency SIP components.
[0004] A broadband frequency conversion SIP component of the present invention comprises a frequency conversion circuit, an alumina ceramic substrate, a Kovar alloy frame, a Kovar alloy cover plate and a high-lead solder column. The frequency conversion circuit is mounted on the alumina ceramic substrate using conductive adhesive, the Kovar alloy frame is welded on the alumina ceramic substrate using hard lead soldering, and the Kovar alloy cover plate is welded on the Kovar alloy frame using a parallel sealing process; the broadband frequency conversion SIP component uses a CCGA packaging architecture and is welded on a printed circuit board through high-lead solder columns; the CCGA solder columns and the internal through holes of the alumina ceramic substrate can realize the transmission of radio frequency, local oscillator, intermediate frequency signals, power supply, and control signals from the printed circuit board to the chip.
[0005] Furthermore, the frequency conversion circuit includes a broadband filter group chip 1, a bidirectional amplification multifunctional chip, a frequency conversion multifunctional chip 1, a broadband filter chip 2, a broadband filter chip 3 and a frequency conversion multifunctional chip 2 arranged in sequence. All chips are mounted on an alumina ceramic substrate using conductive adhesive, and the chip pins are fanned out to the metal pads on the surface of the ceramic substrate using a gold wire bonding process.
[0006] Preferably, the frequency conversion multifunctional chips 1 and 2 are both InPHBT frequency conversion multifunctional chips, integrating an amplifier, a mixer, a frequency multiplier, and a filter.
[0007] Preferably, the broadband filter chips 1, 2 and 3 are all GaAs chip filters with high out-of-band suppression.
[0008] Preferably, the bidirectional amplification multifunctional chip adopts GaAs FET technology, with low noise and fast switching speed.
[0009] The beneficial effects of the present invention are
[0010] (1) The use of frequency conversion multifunctional chips based on InPHBT technology has high linearity and can significantly improve the spurious level of broadband frequency conversion components. The chip has low power consumption and high integration, which is conducive to the realization of highly integrated and small-sized broadband frequency conversion components.
[0011] (2) The system-level packaging (SIP) technology is used to combine an alumina ceramic substrate with a Kovar alloy frame and cover to achieve miniaturization of the frequency conversion component.
[0012] (3) This technical solution is highly versatile and can be used as a reference for technicians in this field to design broadband frequency conversion SIP components.
[0013] (4) This technical solution achieves high integration of frequency conversion components and chips, effectively reduces the number and size of chips, eliminates redundant packaging, and can save more than 50% of costs. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] Figure 1 Schematic diagram of a link according to an embodiment of the present invention.
[0015] Figure 2 FIG. 4 is a cross-sectional view of a SIP according to an embodiment of the present invention. DETAILED DESCRIPTION
[0016] The technical solutions in the embodiments of the present invention are described clearly and completely below. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0017] A broadband frequency conversion SIP component of the present invention comprises: Figure 1 As shown in the frequency conversion link, 101 is a broadband filter group chip, 102 is a bidirectional amplification multifunctional chip, 103 is a frequency conversion multifunctional chip, 104 is a broadband filter chip, 105 is a broadband filter chip, and 106 is a frequency conversion multifunctional chip. Figure 2 As shown, the broadband frequency conversion SIP component, in addition to the above-mentioned MMIC chip, also includes 201 an alumina ceramic substrate, 202 a Kovar alloy frame, 203 a Kovar alloy cover plate and 204 a high-lead solder column.
[0018] The frequency conversion multifunctional chips 103 and 106 adopt the InP HBT process, integrate amplifiers, mixers, frequency multipliers, and filters, have high gain, low power consumption, and low intermodulation product power, and are the prerequisite for the technical solution to achieve high integration, low transmit and receive spurious signals, and low power consumption.
[0019] The 101 broadband filter group chip, 104 broadband filter chip, and 105 broadband filter chip are all GaAs chip filters with high out-of-band suppression.
[0020] The 102 bidirectional amplification multifunctional chip adopts GaAs FET technology, has low noise and fast switching speed.
[0021] The chips are all mounted on a 201 alumina ceramic substrate using conductive adhesive, and the chip pins are fanned out to the metal pads on the surface of the ceramic substrate using a gold wire bonding process.
[0022] The chip RF pins are bonded with two gold wires, and the power pins are decoupled by adding chip capacitance.
[0023] The 202 Kovar alloy frame is welded on the 201 alumina ceramic substrate by using hard lead welding.
[0024] The 203 Kovar alloy cover plate is welded to the 202 Kovar alloy frame by using a parallel sealing welding process.
[0025] The broadband frequency conversion SIP uses a CCGA (ceramic solder column array) packaging architecture and is soldered on a printed circuit board through 204 high-lead solder columns to be used as a packaging device.
[0026] The CCGA solder column and the internal through hole of the alumina ceramic substrate can realize the transmission of radio frequency, local oscillator, intermediate frequency signals as well as power supply and control signals from the printed circuit board to the chip.
[0027] Practice has proved that the ultra-wideband frequency conversion SIP of this embodiment can achieve the following technical indicators:
[0028] (1) Working temperature: -55~125℃;
[0029] (2) Receive gain: 30dB;
[0030] (3) Transmitting power: 15dBm;
[0031] (4) Receive spurious suppression: ≥55dBc@2GHz band;
[0032] (5) Spurious emission suppression: ≥45dBc@2GHz band;
[0033] The present invention has high integration, small size, wide instantaneous working frequency band and long service life.
[0034] The present invention is not limited to the above specific implementations, and the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made to the above implementations based on the technical essence of the present invention shall be included in the protection scope of the present invention.
Claims
1. A broadband frequency conversion SIP component, characterized in that: It includes a frequency conversion circuit, an alumina ceramic substrate, a Kovar alloy frame, a Kovar alloy cover plate and high-lead solder columns; the frequency conversion circuit is mounted on the alumina ceramic substrate using conductive glue, the Kovar alloy frame is welded to the alumina ceramic substrate using hard lead soldering, and the Kovar alloy cover plate is welded to the Kovar alloy frame using a parallel sealing process; the broadband frequency conversion SIP component uses a CCGA packaging architecture and is welded on a printed circuit board via high-lead solder columns; the CCGA solder columns and the internal through holes of the alumina ceramic substrate can realize the transmission of radio frequency, local oscillator, intermediate frequency signals as well as power supply and control signals from the printed circuit board to the chip.
2. A broadband frequency conversion SIP component according to claim 1, characterized in that: The frequency conversion circuit includes a broadband filter group chip 1, a bidirectional amplification multifunctional chip, a frequency conversion multifunctional chip 1, a broadband filter chip 2, a broadband filter chip 3 and a frequency conversion multifunctional chip 2 arranged in sequence. All chips are mounted on an alumina ceramic substrate using conductive adhesive, and the chip pins are fanned out to the metal pads on the surface of the ceramic substrate using a gold wire bonding process.
3. A broadband frequency conversion SIP component according to claim 2, characterized in that: The frequency conversion multifunctional chips 1 and 2 are both InP HBT frequency conversion multifunctional chips, integrating an amplifier, a mixer, a frequency multiplier, and a filter.
4. A broadband frequency conversion SIP component according to claim 2, characterized in that: The broadband filter chips 1, 2 and 3 are all GaAs chip filters with high out-of-band suppression.
5. A broadband frequency conversion SIP component according to claim 2, characterized in that: The bidirectional amplification multifunctional chip adopts GaAs FET technology, has low noise and fast switching speed.
Citation Information
Patent Citations
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