Elastic wave device and module

Abstract

The present application relates to an elastic wave device and module comprising a package substrate, a device chip, and a sealing part formed on one surface side of the package substrate. A transmitting-side external connection terminal is arranged near one of four corners of a functional surface of the device chip; the package substrate is provided with a heat dissipation wiring, and the heat dissipation wiring is connected with the sending side external connection terminal through a bump; a gap is also formed at any position between the outer edge of the device chip and the outer edge of the packaging substrate in the direction surrounding the center of the device chip; the interval of the first side, close to the sending side external connection terminal, of the device chip is larger than the interval of the third side opposite to the first side; the interval of a second side, which is close to the external connecting terminal on the transmitting side and is orthogonal to the first side, on the device chip is greater than the interval of a fourth side opposite to the second side; the center of the packaging substrate does not coincide with the center of the device chip, and through the structure, the heat dissipation performance of the elastic wave device is improved.

Description

Technical Field

[0001] The present invention relates to an improvement of an elastic wave device suitable for use as a duplexer in mobile communication equipment and the like. Background Art

[0002] The elastic wave device 100 is used as a duplexer in a mobile communication device, etc., and its structure is as follows: Figure 7 and Figure 8 shown.

[0003] The elastic wave device has a device chip 103 in the form of a quadrilateral plate mounted on a package substrate 101 in the form of a quadrilateral plate via bumps 102, and a sealing portion 104 made of resin is used to hermetically seal the gap between the package substrate 101 and the device chip 103 formed by the bumps 102 to form an internal space 105. On one surface of the device chip 103 located on the side of the internal space 105, a circuit 106 including a plurality of IDT electrodes 106a is formed of a metal film, and an external connection terminal 107 for connecting the circuit 106 to the package substrate 101 side is formed.

[0004] Here, in such elastic wave device 100, among the external connection terminals 107, the transmission side external connection terminal (Tx), for example Figure 7 A large amount of heat is easily generated near the external connection terminal 107a at the upper left corner of the circuit. Since this heat may cause damage to the IDT1 electrode, it is necessary to effectively release it to the outside.

[0005] The above-mentioned heat diffuses in the form of concentric circles with the sending-side external connection terminal 107a as the center, and is transferred to the above-mentioned sealing portion 104 and the packaging substrate 100. However, if the sending-side external connection terminal 107a is set near a corner 108 of the above-mentioned one side of the above-mentioned device chip 103, a wider heat transfer area can be ensured on the center side of the device chip 103, but on the opposite side, the heat transfer area is relatively narrow. Summary of the invention

[0006] The main problem to be solved by the present invention is to provide a new structure that can reasonably improve the heat dissipation of such an elastic wave device.

[0007] In a first aspect, the present application provides an elastic wave device having:

[0008] A packaging substrate, wherein the packaging substrate is in a quadrilateral plate shape;

[0009] A device chip, wherein the device chip is in a quadrilateral plate shape, the plate area of ​​the device chip is smaller than the plate area of ​​the package substrate, and one side of the package substrate has a functional surface facing the device chip mounted on the package substrate, the functional surface is opposite to a functional element including an IDT electrode;

[0010] A sealing portion, the sealing portion is formed on the one side of the package substrate; an internal space is formed between the functional surface of the device chip and the one side of the package substrate; and a transmission-side external connection terminal is provided near one of the four corners of the functional surface of the device chip;

[0011] The package substrate has a heat dissipation wiring, and the heat dissipation wiring is connected to the transmission-side external connection terminal via a bump;

[0012] In the direction surrounding the center of the device chip, a gap is also formed at any position between the outer edge of the device chip and the outer edge of the packaging substrate;

[0013] The interval on the first side of the device chip close to the external connection terminal on the transmitting side is greater than the interval on the third side opposite to the first side; the interval on the second side of the device chip close to the external connection terminal on the transmitting side and orthogonal to the first side is greater than the interval on the fourth side opposite to the second side; the center of the packaging substrate does not overlap with the center of the device chip.

[0014] In some of the embodiments, the heat dissipation wiring comprises: a first part, which is connected to the external connection terminal on the transmitting side under the device chip; and a second part, which is located in the gap and the heat dissipation wiring is connected to the sealing part in the second part.

[0015] In some of the embodiments, the device chip is a duplexer having a transmission-side filter and a reception-side filter as the functional elements, and the transmission-side external connection terminal is connected to the transmission-side filter.

[0016] In some of the embodiments, the device chip further includes a piezoelectric body, and a constituent material of the piezoelectric body includes lithium tantalate or lithium niobate.

[0017] In some embodiments, the IDT electrode is composed of electrode pairs, each electrode pair connects one end of a plurality of electrode fingers via a bus bar, and the electrode fingers are arranged in parallel so that the length direction of the electrode fingers intersects with the propagation direction of the elastic wave.

[0018] In some of the embodiments, the sealing portion is made of a synthetic resin, which includes a resin and a filler; and the thermal conductivity of the filler is higher than that of the resin.

[0019] In some embodiments, the content of the filler in the resin is 70 wt % to 90 wt %.

[0020] In some of the embodiments, the filler is made of at least one of aluminum oxide, aluminum nitride and powdered diamond.

[0021] In some of the embodiments, the device chip further includes a reflector, which connects ends of a plurality of electrode fingers via a bus bar, and the electrode fingers are arranged in parallel so that the length direction of the electrode fingers intersects with the propagation direction of the elastic wave.

[0022] In a second aspect, the present application further provides a module applicable to the elastic wave device described in any one of the first aspects above.

[0023] According to the elastic wave device of the present invention, by positioning the device chip on the packaging substrate so that the center of the packaging substrate is inconsistent with the center of the device chip, it is possible to ensure that the heat transfer area is sufficiently wide in the entire circumferential direction centered on the transmitting-side external connection terminal formed near a corner of the device chip, thereby effectively releasing the heat to the outside.

[0024] The details of one or more embodiments of the present application are set forth in the following drawings and description to make other features, objects, and advantages of the present application more readily apparent. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The drawings described herein are used to provide further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute improper limitations on the present application.

[0026] Figure 1 It is a three-dimensional structural diagram of an elastic wave device according to one embodiment of the present invention.

[0027] Figure 2 It is a planar structural diagram of the elastic wave device, and the description of the sealing part is omitted.

[0028] Figure 3 yes Figure 2 Cross-sectional structure diagram at line AA in the figure.

[0029] Figure 4 yes Figure 2 Cross-sectional structure diagram at line BB in .

[0030] Figure 5 FIG. 1 is a structural diagram showing an example of a circuit formed on a device chip constituting the elastic wave device.

[0031] Figure 6 FIG. 1 is a diagram showing a structure of an example of a resonator formed on a device chip constituting the elastic wave device.

[0032] Figure 7 FIG. 1 is a plan view showing a structure of an example of a conventional elastic wave device.

[0033] Figure 8 yes Figure 7 Cross-sectional structure diagram at the CC line position in .

[0034] In the figure: 1, elastic wave device; 2, packaging substrate; 2a, one side of the packaging substrate; 2b, the other side of the packaging substrate; 2c, wiring; 2d, 2da, external connection terminals; 2e, outer edge; 2f, side; 2g, heat dissipation wiring; 2ga, first part; 2gb, second part; 2gc, third part; 2h, center; 2i, corner of the packaging substrate; 2j, through hole; 3, device chip; 3a, functional surface; 3b, non-functional surface; 3c, center; 3d, outer edge; 3e, side; 3f, 3fa, corner of the device chip; 3ga, first side; 3gb, second side; 3gc, third side three sides; 3gd, the fourth side; 4, sealing part; 4a, lateral part; 4b, longitudinal part; 5, gap; 6, internal space; 7, functional element; 7a, 7aa, 7ab, resonator; 7b, IDT electrode; 7c, reflector; 7d, electrode finger; 7e, 7g, bus bar; 7f, electrode finger; 8, wiring; 9, external connection terminal; 9a, transmitting side external connection terminal; 10, bump; 11, circuit; 11a, transmitting side filter; 11b, receiving side filter; 12, ground terminal; S, S1, S2, S3, S4, interval; x, propagation direction; y, diagonal. DETAILED DESCRIPTION

[0035] In order to more clearly understand the purpose, technical solutions and advantages of the present application, the present application is described and illustrated below in conjunction with the accompanying drawings and embodiments.

[0036] Unless otherwise defined, the technical terms or scientific terms involved in this application shall have the general meaning understood by people with ordinary skills in the technical field to which this application belongs. The words "one", "a", "a", "the", "these" and the like in this application do not represent quantitative restrictions, and they can be singular or plural. The terms "include", "comprise", "have" and any variants thereof involved in this application are intended to cover non-exclusive inclusions; for example, a process, method and system, product or device comprising a series of steps or modules (units) is not limited to the listed steps or modules (units), but may include unlisted steps or modules (units), or may include other steps or modules (units) inherent to these processes, methods, products or devices. The words "connect", "connected", "coupled" and the like involved in this application are not limited to physical or mechanical connections, but may include electrical connections, whether directly or indirectly. The "multiple" involved in this application refers to two or more. "And / or" describes the association relationship of associated objects, indicating that there can be three relationships. For example, "A and / or B" can mean: A exists alone, A and B exist at the same time, and B exists alone. Usually, the character " / " indicates that the objects associated with each other are in an "or" relationship. The terms "first", "second", "third", etc. involved in this application are only used to distinguish similar objects and do not represent a specific ordering of the objects.

[0037] The following is based on Figure 1 to Figure 6 A typical embodiment of the present invention will be described below. The elastic wave device 1 in this embodiment is suitable for use as a duplexer in mobile communication equipment and the like.

[0038] The elastic wave device 1 includes a device chip 3 mounted on one surface 2 a of a package substrate 2 . A functional element 7 , typically a resonator 7 a , including an IDT electrode 7 b is formed on a functional surface 3 a of the device chip 3 , and the functional surface 3 a faces the one surface 2 a of the package substrate 2 .

[0039] Typically, the device chip 3 is formed in a plate shape, which is a quadrilateral with a side length of 0.5 mm to 1 mm and a thickness of 0.15 mm to 0.2 mm. In addition, the package substrate 2 is formed in a plate shape, which is a quadrilateral with a side length of 0.7 mm to 3 mm and a thickness of 0.15 mm to 0.2 mm. The thickness of the elastic wave device 1 is about 0.4 mm to 0.6 mm.

[0040] The cross-sectional structure is Figure 3 and Figure 4Reference numeral 3 in the figure denotes a device chip, reference numeral 3a denotes its functional surface, reference numeral 3b denotes a non-functional surface facing the functional surface 3a, reference numeral 7 denotes a functional element, and reference numeral 9 denotes a wiring 8 formed on the functional surface 3a (see Figure 5 ) at the end of the external output terminal.

[0041] Bumps 10 (projecting electrodes) are interposed between the device chip 3 and the package substrate 2 . The bumps 10 electrically connect the external output terminals 9 to the wiring 2 c formed on the package substrate 2 side, and gaps 5 corresponding to the height of the bumps 10 are formed.

[0042] External connection terminals 2 d are formed on a surface 2 b of the package substrate 2 opposite to the surface 2 a on which the device chip 3 is mounted. The external connection terminals 2 d are used to connect the elastic wave device 1 to a module substrate (not shown) or the like.

[0043] In the example shown in the figure, the package substrate 2 is in a flat hexahedral shape, one surface 2 a and another surface 2 b facing the same are both rectangular, and these surfaces are both rectangular when viewed in a direction perpendicular to the surfaces.

[0044] In addition, the device chip 3 is a flat hexahedron, and its functional surface 3a and the non-functional surface 3b facing it are both rectangular when observed in a direction orthogonal to these surfaces, and the areas of these surfaces are smaller than the areas of one surface 2a and the other surface 2b of the packaging substrate 2.

[0045] Furthermore, the device chip 3 is mounted on the package substrate 2 so that the device chip 3 is surrounded by a center 3c (see Figure 2 ) direction, a gap S is formed between the outer edge 3d of the device chip 3 (the portion where the functional surface 3a of the device chip 3 is connected to the side surface 3e which becomes the thickness) and the outer edge 2e of the packaging substrate 2 (the portion where one surface 2a of the packaging substrate 2 is connected to the side surface which becomes its thickness).

[0046] After the device chip 3 is mounted on the one surface 2 a of the package substrate 2 in this manner, the sealing portion 4 is formed on the one surface 2 a of the package substrate 2 .

[0047] Typically, the sealing portion 4 is made of a synthetic resin having insulating properties.

[0048] The sealing portion 4 comprises: a transverse portion 4a, which covers the non-functional surface 3b of the device chip 3 facing the functional surface 3a of the device chip 3; and a longitudinal portion 4b, which follows the transverse portion 4a, covers the side surface 3e between the functional surface 3a and the non-functional surface 3b, which serves as the thickness of the device chip 3, and extends to the one surface 2a of the packaging substrate 2, thereby forming an internal space 6 (hollow structure portion or air cavity) between the functional surface 3a of the device chip 3 and the one surface 2a of the packaging substrate 2.

[0049] The longitudinal portion 4 a of the sealing part 4 hermetically seals the gap 5 along the entire circumference of the device chip 3 , thereby forming the internal space 6 between the functional surface 3 a of the device chip 3 and the one surface 2 a of the package substrate 2 .

[0050] In the example shown in the figure, the elastic device 1 having a hexahedral appearance is sealed by the sealing portion 4 .

[0051] The device chip 3 includes a functional element 7 including an IDT electrode 7 b in a portion of the functional surface 3 a facing the internal space 6 . In the example shown in the figure, the functional element 7 includes a resonator 7 a .

[0052] The device chip 3 has the function of propagating elastic waves. Typically, the device chip 3 uses lithium tantalate or lithium niobate as a piezoelectric body. In addition, in other embodiments, the device chip 3 can be composed of lithium tantalate or lithium niobate, stacked with sapphire, silicon, aluminum oxide, spinel, quartz or glass.

[0053] Figure 5 1 shows a conceptual example of a circuit 11 provided on one device chip 3. Reference numeral 11a denotes a transmission-side filter, reference numeral 11b denotes a reception-side filter, reference numeral 9 denotes an external connection terminal, reference numeral 9a denotes a transmission-side external connection terminal of the transmission-side filter 11a connected to the external connection terminal 9, reference numeral 7aa denotes a resonator 7a connected in series between the external connection terminals 9, reference numeral 7ab denotes a resonator 7a connected in parallel between the external connection terminals 9, reference numeral 12 denotes a ground terminal, and reference numeral 8 denotes wiring. The number and arrangement of the resonators 7a may be changed as required.

[0054] Figure 6An example of a resonator 7a constituting a duplexer is shown. The resonator 7a has an IDT electrode 7b and a reflector 7c formed in a manner of sandwiching the IDT electrode 7b. The IDT electrode 7b is composed of an electrode pair, each of which connects one end of a plurality of electrode fingers 7d through a bus bar 7e, and the plurality of electrode fingers 7d are arranged in parallel so that the length direction of the electrode fingers 7d intersects with the propagation direction x of the elastic wave. The reflector 7c connects the ends of a plurality of electrode fingers 7f through a bus bar 7g, and the plurality of electrode fingers 7f are arranged in parallel so that the length direction of the electrode fingers 7f intersects with the propagation direction x of the elastic wave.

[0055] Typically, the resonator 7a is composed of a conductive metal film formed by photolithography technology.

[0056] The device chip 3 has a transmission-side external connection terminal 9a on the functional surface 3a near one corner 3fa among four corners 3f of the functional surface 3a.

[0057] In the example shown in the figure, the device chip 3 is located at Figure 2 A transmission-side external connection terminal 9a is formed near the upper left corner 3fa of the display.

[0058] On the other hand, the package substrate 2 has a heat dissipation wiring 2 g connected to the transmission-side external connection terminal 9 a via a bump 10 .

[0059] In addition, the device chip 3 and the packaging substrate 2 are combined in such a way that at any position in the direction surrounding the center 3c of the device chip 3, there is a certain distance between the outer edge 3d of the device chip 3 and the outer edge 2e of the packaging substrate 2, forming a gap S.

[0060] At the same time, while keeping the center 2h of the above-mentioned packaging substrate 2 and the center 3c of the above-mentioned device chip 3 non-overlapping, the above-mentioned device chip 3 is located on the above-mentioned packaging substrate 2, and the spacing S1 on the first side 3ga of the transmitting side external connection terminal 9a of the device chip 3 close to the above-mentioned corner 3fa is larger than the spacing S2 on the third side 3gc opposite to the first side 3ga; the spacing S3 on the second side 3gb orthogonal to the first side 3ga of the transmitting side external connection terminal 9a of the device chip 3 close to the above-mentioned corner 3fa is larger than the spacing S4 on the fourth side 3gd opposite to the second side 3gb.

[0061] In the example shown in the figure, the upper and lower sides of the device chip 3 are located at Figure 2 The upper side of the device chip 3 is used as the first side 3ga, and the left and right sides of the device chip 3 are located at Figure 2 The left side of the device chip 3 is used as the second side 3gb, and the upper and lower sides of the device chip 3 are located at Figure 2 The lower side of the device chip 3 is taken as the third side 3gc, and the left and right sides of the device chip 3 are located at Figure 2 The right side of is used as the fourth side 3gd mentioned above.

[0062] Furthermore, the first side 3ga and Figure 2 The interval S1 between the outer edge 2e of the package substrate 2 located on the upper side thereof is greater than the interval S1 between the third side 3gc and the Figure 2 At the same time, the second side 3gb and the outer edge 2e of the package substrate 2 located below are spaced S2 apart. Figure 2 The interval S3 between the outer edge 2e of the package substrate 2 located on the left side is greater than the interval S3 between the fourth side 3gd and the outer edge 2e of the package substrate 2 located on the left side. Figure 2 The interval S4 between the outer edge 2e of the packaging substrate 2 located on the right side thereof.

[0063] More specifically, the first side 3ga is substantially parallel to the outer edge 2e of the packaging substrate 2 on its side, and the interval S1 is formed between the two over the entire length of the first side 3ga, and the second side 3gb is substantially parallel to the outer edge 2e of the packaging substrate 2 on its side, and the interval S3 is formed between the two over the entire length of the second side 3gb.

[0064] In such elastic wave device 1, a large amount of heat is likely to be generated in the external connection terminals 9, especially near the transmission-side external connection terminals 9a (Tx). This heat may damage the IDT electrodes, so it is necessary to effectively release the heat to the outside.

[0065] The heat diffuses in a concentric circle around the transmission-side external connection terminal 9 a when the elastic wave device 1 is viewed from a direction perpendicular to the functional surface 3 a , and is transferred to the sealing portion 4 and the package substrate 2 .

[0066] In this embodiment, as described above, by positioning the device chip 3 on the package substrate 2 so that the center 2h of the package substrate 2 is not consistent with the center 3c of the device chip 3, it is possible to ensure that the heat transfer area is widely distributed in the entire circumferential direction around the transmission-side external connection terminal 9a formed near one corner 3fa of the device chip 3. That is, the heat transfer area is not limited to the center 3c side of the device chip 3 based on the transmission-side external connection terminal 9a, but also includes the corner 3fa, the first side 3ga, the second side 3gb, and the area between the outer edge 2e of the package substrate 2 positioned outside these sides through the intervals S1 and S3, thereby ensuring the required width. As a result, the heat can be effectively released to the outside.

[0067] In other words, in elastic wave device 1 of this embodiment, the heat transfer region can be ensured as wide as possible without changing the size thereof, that is, without changing the size of package substrate 2 .

[0068] In addition, in this embodiment, the above-mentioned heat dissipation wiring 2g formed on the packaging substrate 2 has a first part 2ga located below the above-mentioned device chip 3 and connected to the above-mentioned sending side external connection terminal 9a, and a second part 2gb located in the above-mentioned interval S, and the second part 2gb is connected to the above-mentioned sealing part 4.

[0069] Preferably, the width of the heat dissipation wiring 2g is configured to be wider than that of a normal wiring.

[0070] In the example shown in the figure, the first portion 2ga and the second portion 2gb of the heat dissipation wiring 2g are both formed on one side 2a of the package substrate 2. The second portion 2gb is formed along an imaginary diagonal line y (see FIG. 2 ) passing through the center 2h of the package substrate 2 and the corner 2i of the one side 2a of the package substrate 2. Figure 2 One end of the second portion 2gb is connected to the first portion 2ga, and the other end of the second portion 2gb extends to the outside of the corner 3fa of the device chip 3 located near the transmission side external connection terminal 9a and is located within the above-mentioned interval S.

[0071] More specifically, on the diagonal line y passing through the center 2h of the packaging substrate 2 and through the position formed by the sending side external connection terminal 9a, the above-mentioned space S is formed between the corners 3fa of the device chip 3 near the sending side external connection terminal 9a at the two corners 2i of the packaging substrate 2, and the above-mentioned second part 2gb is located between the corner 2i of the packaging substrate 2 and the corner 3fa of the above-mentioned device chip 3.

[0072] Furthermore, the longitudinal portion 4b of the seal portion 4 is in contact with the second portion 2gb at the interval S described above.

[0073] Therefore, in the present embodiment, the heat generated in the vicinity of the transmission-side external connection terminal 9 a can be more easily released to the outside through the sealing portion 4 .

[0074] In the example shown in the figure, the other end of the second portion 2gb of the heat dissipation wiring 2g is further connected to a third portion 2gc (internal wiring) formed in a through hole 2j penetrating the package substrate 2, and the elastic wave device 1 has an external connection terminal 2da for heat dissipation on the other surface 2b of the package substrate 2 through the third portion 2gc. Thus, by connecting the external connection terminal 2da for heat dissipation to the side of the module substrate (not shown), the heat can be released to the side of the module substrate (not shown).

[0075] In this embodiment, the sealing portion 4 is formed of a resin with high thermal conductivity, which can further improve the heat dissipation performance. Such a high thermal conductivity resin generally uses a filler composed of a substance with a higher thermal conductivity than the resin, and the content of the filler in the resin as the base material is controlled within the range of 70wt% to 90wt%. Typically, the filler is composed of granules with a diameter of about 10μm.

[0076] Specifically, the resin constituting the inner layer 4c may be selected from epoxy resin containing fillers or phenolic resin containing fillers. Typically, aluminum oxide, aluminum nitride, or powdered diamond may be used as the filler.

[0077] The present application also provides a module applicable to the first to fourth embodiments, wherein the module includes a package substrate, a plurality of external connection terminals, an integrated circuit component, an elastic wave device, an inductor, and a sealing portion.

[0078] A plurality of external connection terminals are formed on the lower surface of the package substrate and are mounted on a motherboard of a preset mobile communication terminal.

[0079] For example, an integrated circuit component is mounted inside the package substrate. The integrated circuit component includes a switch circuit and a low noise amplifier.

[0080] The elastic wave device is mounted on the main surface of the package substrate.

[0081] Inductors are integrated passive devices (IPDs). They are mounted on the main surface of a package substrate and are used for impedance matching.

[0082] The sealing portion seals a plurality of electronic components including the elastic wave device.

[0083] Furthermore, it is needless to say that the present invention is not limited to the above-described embodiments, but includes all embodiments that can achieve the object of the present invention.

[0084] The expressions and terms used in the present invention are for illustrative purposes only and should not be considered as limiting. The use of "include", "have", "have", "include" and their variations as used herein means including the following listed items, their equivalents and additional items.

[0085] The term "embodiment" in this application refers to a specific feature, structure or characteristic described in conjunction with the embodiment that can be included in at least one embodiment of the present application. The appearance of this phrase in various locations in the specification does not necessarily mean the same embodiment, nor does it mean that it is mutually exclusive with other embodiments and is independent or optional. It is clearly or implicitly understood by those of ordinary skill in the art that the embodiments described in this application can be combined with other embodiments without conflict.

[0086] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of patent protection. It should be pointed out that, for a person of ordinary skill in the art, several variations, corrections and improvements can be made without departing from the concept of the present application, and these all belong to the scope of protection of the present application. Therefore, the scope of protection of the present application shall be subject to the attached claims.

Claims

1. An elastic wave device, characterized in that: have: A packaging substrate, wherein the packaging substrate is in a quadrilateral plate shape; A device chip, wherein the device chip is in a quadrilateral plate shape, the plate area of ​​the device chip is smaller than the plate area of ​​the package substrate, and one side of the package substrate has a functional surface facing the device chip mounted on the package substrate, the functional surface is opposite to a functional element including an IDT electrode; A sealing portion, the sealing portion is formed on the one side of the package substrate; an internal space is formed between the functional surface of the device chip and the one side of the package substrate; and a transmission-side external connection terminal is provided near one of the four corners of the functional surface of the device chip; The package substrate has a heat dissipation wiring, and the heat dissipation wiring is connected to the transmission-side external connection terminal via a bump; In the direction surrounding the center of the device chip, a gap is also formed at any position between the outer edge of the device chip and the outer edge of the packaging substrate; The interval on the first side of the device chip close to the external connection terminal on the transmitting side is greater than the interval on the third side opposite to the first side; the interval on the second side of the device chip close to the external connection terminal on the transmitting side and orthogonal to the first side is greater than the interval on the fourth side opposite to the second side; the center of the packaging substrate does not overlap with the center of the device chip.

2. The elastic wave device according to claim 1, characterized in that: The heat dissipation wiring includes a first portion connected to the transmission-side external connection terminal under the device chip and a second portion located in the gap and in contact with the sealing portion.

3. The elastic wave device according to claim 1, characterized in that: The device chip is a duplexer including a transmission-side filter and a reception-side filter as the functional elements, and the transmission-side external connection terminal is connected to the transmission-side filter.

4. The elastic wave device according to claim 1, characterized in that: The device chip further includes a piezoelectric body, and a constituent material of the piezoelectric body includes lithium tantalate or lithium niobate.

5. The elastic wave device according to claim 1, characterized in that: The IDT electrode is composed of an electrode pair, each electrode pair connects one end of a plurality of electrode fingers via a bus bar, and the electrode fingers are arranged in parallel so that the length direction of the electrode fingers intersects with the propagation direction of the elastic wave. 6 . The elastic wave device according to claim 1 , wherein the sealing portion is made of a synthetic resin, the synthetic resin comprising a resin and a filler, and the thermal conductivity of the filler is higher than the thermal conductivity of the resin. 7 . The elastic wave device according to claim 6 , wherein the content of the filler in the resin is 70 wt % to 90 wt %. 8 . The elastic wave device according to claim 6 , wherein a constituent material of the filler includes at least one of aluminum oxide, aluminum nitride, and powdered diamond.

9. The elastic wave device according to claim 1, characterized in that: The device chip also includes a reflector, which connects the ends of a plurality of electrode fingers through a bus bar. The electrode fingers are arranged in parallel so that the length direction of the electrode fingers intersects with the propagation direction of the elastic wave.

10. A module, characterized in that: A method comprising the elastic wave device according to any one of claims 1 to 9.

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