Preparation device and method of single crystal wire and application of preparation device and method

Abstract

The invention discloses a preparation device and method for a single crystal wire and application of the preparation device. The preparation device comprises a machine tool body, a lifting device arranged on the upper portion of the machine tool body, a wire conveying mechanism doing reciprocating linear motion on the machine tool body and a lifting driving mechanism. The wire conveying mechanism comprises a first cutting wheel set, a second cutting wheel set located below the first cutting wheel set and a turning roller arranged at the joint of the first cutting wheel set and the second cutting wheel set. A plurality of cutting lines are wound on the first cutting wheel set in the first line inlet direction, a plurality of cutting lines are wound on the second cutting wheel set in the second line inlet direction, the turning roller is connected to the first cutting wheel set and the second cutting wheel set through the cutting lines, and the angle between the first line inlet direction and the second line inlet direction is 1-90 degrees. Through the turning roller and the second cutting wheel set, the second cutting wheel set can change the wire inlet direction, the second cutting wheel set and the first cutting wheel set conduct feeding cutting at the same time to prepare the single crystal wire, and the preparation efficiency and quality of the metal single crystal wire are improved.

Description

Technical Field

[0001] The present application belongs to the technical field of crystal material processing, and specifically, relates to a single crystal wire preparation device, method and application thereof. Background Art

[0002] With the continuous breakthroughs in semiconductor technology, integrated circuit technology and the quality of electronic components, the rapid progress of related industries in the fields of electronics, communications, aerospace and medical care requires parts to develop in the direction of miniaturization and precision; at the same time, it also puts forward higher requirements on the quality of metal materials used in these fields. One of the development trends is to develop finer and thinner advanced materials: requiring good processability, strength, toughness and softness, as well as excellent conductivity, low line resistance loss and strong signal fidelity. Therefore, in order to improve the material quality of metal single crystal wires, it is necessary to further optimize the preparation process of metal single crystal wires.

[0003] In the prior art, the preparation of metal single crystal wires mainly utilizes a continuous casting method to grow metal single crystals or columnar crystal ingots, and forms long strips of metal single crystal wires by drawing. However, the drawing process easily causes the grains in the metal single crystal wires to slip, twin, and kink, thereby affecting the quality of the metal single crystal wires, and the drawing process consumes a long time.

[0004] Semiconductor single crystal wires are mainly prepared by cutting, and the single crystal ingot to be processed is ground by a high-speed cutting wire to achieve the purpose of cutting. For example, the Chinese patent application number CN201710704064.3 discloses a crystalline silicon multi-wire cutting machine and a crystalline silicon cutting method. However, the wire cutting equipment of crystalline silicon in this patent needs to be driven by a swing mechanism to swing the workpiece carrier, change the placement angle of the crystalline silicon carried by the cutting workpiece carrier, and cut. The operation is relatively cumbersome and cannot effectively improve the preparation efficiency of semiconductor single crystal wires. Summary of the invention

[0005] The technical problem to be solved by the present application is to provide a single crystal wire preparation device, method and application thereof, so as to improve the quality and preparation efficiency of metal single crystal wire and better meet the requirements of related industries for metal single crystal wire.

[0006] In order to solve the above-mentioned problems of the present application, the present application provides a single crystal wire preparation device, including a machine tool body, a lifting device arranged on the upper part of the machine tool body, a wire transport mechanism and a lifting drive mechanism that perform reciprocating linear motion on the machine tool body, the wire transport mechanism including a first cutting wheel group, a second cutting wheel group located below the first cutting wheel group, and a changing roller arranged at the junction of the first cutting wheel group and the second cutting wheel group; the first cutting wheel group is wound with multiple cutting wires along a first wire feed direction, and the second cutting wheel group is wound with multiple cutting wires along a second wire feed direction, and the changing roller is respectively connected to the first cutting wheel group and the second cutting wheel group through the cutting wires, and the angle between the first wire feed direction and the second wire feed direction is 1-90°.

[0007] The present application provides a single crystal wire preparation device that utilizes the wire feeding mechanism and lifting drive mechanism on the machine tool body, and realizes efficient and continuous single crystal wire cutting operations through a precisely controlled cutting wheel group and a change-direction roller. By adjusting the angle between the first and second cutting wire feed directions, flexible selection of different cutting angles and paths is achieved, thereby meeting the processing requirements of different single crystal wire products and enhancing the flexibility and adaptability of the preparation process.

[0008] As an improvement of the above-mentioned single crystal wire preparation device in the present application, the first cutting wheel group includes: a first wire-retracting and -releasing wheel and two first wire roller wheels arranged opposite to each other along the first wire feeding direction.

[0009] As an improvement of the above-mentioned single crystal wire preparation device in the present application, the second cutting wheel group includes: a second wire retracting and paying-out wheel and two second wire roller wheels arranged opposite to each other along the second wire feeding direction.

[0010] As an improvement of the single crystal wire preparation device of the present application, the cutting wire uses diamond as an abrasive.

[0011] Furthermore, the cutting wire is made of either diamond steel wire or diamond tungsten wire.

[0012] In order to solve the above-mentioned problems of the present application, the present application also provides a method for preparing a single crystal wire, comprising: fixing the single crystal ingot to be cut on a lifting device and lifting it to a preset position; adjusting the parameters of the cutting line according to the preset cutting size; the parameters include the spacing between each of the cutting lines and the angle between the second line feed direction and the first line feed direction; driving the line transport mechanism to make a linear upward movement toward the single crystal ingot, and the cutting line in the line transport mechanism simultaneously feeds upward along the first line feed direction and the second line feed direction to cut the single crystal ingot, so as to obtain a single crystal wire.

[0013] The present application provides a method for preparing a single crystal wire, which uses a cutting method that cuts in two directions at the same time, effectively shortening the cutting time and improving production efficiency. By accurately adjusting the spacing between each cutting line and the angle between the second cutting direction and the first cutting direction, the method can achieve high-precision cutting of single crystal ingots.

[0014] As an improvement of the present application to the above-mentioned method for preparing single crystal wire, the spacing between the cutting lines is 30μm-30cm; the angle between the second line feed direction and the first line feed direction is 1-90°.

[0015] As an improvement of the present application to the above-mentioned method for preparing single crystal wire, the feed speed of the cutting wire is 0.01-5 mm / min.

[0016] In order to solve the above-mentioned problems of the present application, the present application also provides a single crystal wire preparation device and method and their application in preparing metal single crystal wire.

[0017] Furthermore, the material of the metal single crystal wire includes any one of iron, copper, aluminum, titanium, iron alloy, copper alloy, titanium alloy and aluminum alloy.

[0018] The beneficial effects of this application are:

[0019] The single crystal wire preparation device provided by the present application sequentially installs a first cutting wheel group and a second cutting wheel group that can move up and down under the lifting device, and adjusts the cutting line of the second cutting wheel group to rotate in the horizontal direction through a changing roller, so as to form a two-layer multi-wire cutting. During the preparation process, the two layers of cutting lines simultaneously feed upward to cut the metal single crystal ingot into metal single crystal wires of the same size. During the cutting process, the metal single crystal wire will not be pulled, so the internal grains of the metal single crystal wire will not produce problems such as slippage, twinning or kinking due to plastic deformation, which effectively improves the preparation efficiency and quality of the metal single crystal wire. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a structural schematic diagram of a single crystal wire preparation device in an embodiment of the present application;

[0021] Figure 2 It is a structural schematic diagram of the wire transport mechanism in the embodiment of the present application;

[0022] Figure 3 is a top view of the distribution of cutting lines in an embodiment of the present application;

[0023] Figure 4 It is a schematic flow chart of a method for preparing a single crystal wire in an embodiment of the present application.

[0024] Description of reference numerals:

[0025] 1. Machine tool body; 2. Lifting device; 3. Wire transport mechanism; 31. First cutting wheel group; 311. First pay-off and take-up wheel; 312. First wire roller; 32. Second cutting wheel group; 321. Second pay-off and take-up wheel; 322. Second wire roller; 33. Direction-changing roller. DETAILED DESCRIPTION

[0026] The embodiments of the technical solution of the present application will be described in detail below. The following embodiments are only used to more clearly illustrate the technical solution of the present application, and are therefore only used as examples, and cannot be used to limit the scope of protection of the present application. In addition, the technical features involved in each embodiment of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0027] Example 1

[0028] Figure 1 FIG. 1 is a schematic diagram showing the structure of a single crystal wire preparation device in an embodiment of the present application. Figure 1 As shown, a single crystal wire preparation device provided in the present application includes: a machine tool body 1, a lifting device 2 arranged on the upper part of the machine tool body 1, a wire transport mechanism 3 and a lifting drive mechanism that perform reciprocating linear motion on the machine tool body 1, the wire transport mechanism 3 includes a first cutting wheel group 31, a second cutting wheel group 32 located below the first cutting wheel group 31, and a change-of-direction roller 33 arranged at the junction of the first cutting wheel group 31 and the second cutting wheel group 32;

[0029] The first cutting wheel group 31 is wound with multiple cutting wires along the first wire feeding direction, and the second cutting wheel group 32 is wound with multiple cutting wires along the second wire feeding direction. The direction-changing roller 33 is respectively connected to the first cutting wheel group 31 and the second cutting wheel group 32 through the cutting wires, and the angle between the first wire feeding direction and the second wire feeding direction is 1-90°.

[0030] Specifically, the lifting device 2 is driven by a motor and is used to lift the single crystal ingot to be cut to an appropriate position for subsequent cutting operations. The single crystal ingot can be fixed to the lifting device 2 at one end by glue or a clamp to ensure that the single crystal ingot is parallel to the wire feeding mechanism 3. The lifting drive mechanism is used to control the wire feeding mechanism 3 to reciprocate in the vertical direction to achieve cutting of the single crystal ingot on the lifting device 2. The lifting drive mechanism is also used to adjust the feed speed of the cutting line in the wire feeding mechanism 3.

[0031] The wire feeding mechanism 3 includes a first cutting wheel group 31 and a second cutting wheel group 32 which are horizontally arranged from top to bottom, wherein each cutting wheel group is parallelly arranged with a plurality of cutting wires in the horizontal direction. During the upward feeding process of the wire feeding mechanism 3, the cutting wires on the first cutting wheel group 31 and the second cutting wheel group 32 move to form a wire saw, and the two layers of cutting wires feed upward at the same time, grinding the single crystal ingot so as to cut it into a plurality of single crystal wires of the same size. During the cutting process, the single crystal wire is not easily subjected to the pulling effect, so the crystal grains inside it will not cause the problems of slippage, twinning or kinking due to plastic deformation. Moreover, in this embodiment, the first cutting wheel group 31 and the second cutting wheel group 32 are connected to the redirecting roller 33 at the intersection through the cutting wire. By adjusting the position and angle of the redirecting roller 33, the angle of the cutting wire in the second cutting wheel group 32 can be horizontally rotated by 1-90° relative to the first cutting wheel group 31, thereby realizing the precise cutting of the single crystal wire. Compared with the wire cutting equipment in the prior art which needs to change the angle of the tray carrying the single crystal ingot to be cut and perform cutting in multiple times, the preparation device of this embodiment does not need to change the direction or angle of the single crystal ingot. It can prepare the single crystal wire in one cutting process by flexibly adjusting the movement direction of the cutting wire. It is easy to operate and realizes efficient and precise preparation of the single crystal wire.

[0032] It should be understood that a large amount of heat will be generated due to friction during the cutting process, which may cause the single crystal wire to deform due to heat. In order to solve this technical problem, the single crystal wire preparation device also includes: a heat dissipation mechanism, which sprays cutting fluid on the surface of the cutting wire through a soft liquid outlet pipe with adjustable position and angle to reduce cutting force and cutting heat. Optionally, the heat dissipation mechanism is connected to the lifting drive mechanism and moves with the wire transport mechanism 3.

[0033] In order to reduce the material loss rate, the cutting gap of the single crystal ingot should be as small as possible. Optionally, the diameter of the cutting line is 0.1-0.4 mm.

[0034] Figure 2 is a schematic diagram of the structure of the wire transport mechanism in the embodiment of the present application, Figure 3 is a top view of the cutting line distribution in the embodiment of the present application. Figures 2-3 As shown, in one implementation, the first cutting wheel assembly 31 includes: a first wire-retracting and -releasing wheel 311 and two first wire roller wheels 312 that are arranged opposite to each other along the first wire-feeding direction.

[0035] Specifically, the first pay-off and take-up wheel 311 is located at the starting end of the wire transport mechanism 3, and is used to adjust the pay-off or tightening of the cutting line according to the cutting requirements, ensuring that the cutting line maintains appropriate tension and position during the cutting process. The two first wire rollers 312 are arranged relatively along the first feed direction of the single crystal wire to form a pair of clamping points for stabilizing the transmission path of the cutting line. Optionally, the first pay-off and take-up wheel 311 and the second pay-off and take-up wheel 321 can be driven by a motor. This embodiment can achieve efficient and precise cutting of single crystal wires by precisely controlling the rotation speed of the first pay-off and take-up wheel 311 and the clamping force of the first wire roller 312.

[0036] In one implementation, the second cutting wheel assembly 32 includes: a second wire-retracting and -releasing wheel 321 and two second wire roller wheels 322 that are arranged opposite to each other along the second wire-feeding direction.

[0037] The specific implementation of this embodiment can refer to the implementation and effect of the first cutting wheel set 31 in the previous embodiment, which will not be repeated here.

[0038] In one implementation, the cutting wire uses diamond as an abrasive.

[0039] Specifically, diamond has high hardness and wear resistance. Evenly consolidating diamond abrasive on the surface of the substrate of the cutting wire can improve the cutting force and service life of the cutting wire, reduce the frequency of cutting wire replacement, and improve the preparation efficiency of single crystal wire. Preferably, the material of the cutting wire is any one of diamond steel wire and diamond tungsten wire.

[0040] The single crystal wire preparation device provided in the embodiment of the present application sequentially installs a first cutting wheel group 31 and a second cutting wheel group 32 that can move up and down under the lifting device 2, and adjusts the cutting line of the second cutting wheel group 32 to rotate in the horizontal direction through the changing roller 33, so as to form two-layer multi-wire cutting. During the preparation process, the two layers of cutting lines are simultaneously fed upward to cut the metal single crystal ingot into metal single crystal wires of the same size. During the cutting process, the metal single crystal wire will not be pulled, so the internal grains of the metal single crystal wire will not produce problems such as slippage, twinning or kinking due to plastic deformation, which effectively improves the preparation efficiency and quality of the metal single crystal wire.

[0041] Example 2

[0042] Figure 4 FIG. 1 is a schematic diagram showing a process for preparing a single crystal wire in an embodiment of the present application. Figure 4 As shown, the present application provides a method for preparing a single crystal wire, comprising:

[0043] S1: Fix the single crystal ingot to be cut on the lifting device and lift it to a preset position;

[0044] Optionally, the length and width of the single crystal ingot to be cut are 5cm-50cm, or the diameter is 5cm-50cm, and the height is 5cm-500cm. Preferably, the length and width of the single crystal ingot to be cut are 10cm-30cm, or the diameter is 10cm-30cm, and the height is 200cm-400cm.

[0045] S2: Adjust the parameters of the cutting line according to the preset cutting size;

[0046] Specifically, the parameters include the spacing between each of the cutting lines and the angle between the second line direction and the first line direction. Optionally, the spacing between each of the cutting lines is 30 μm-30 cm; the angle between the second line direction and the first line direction is 1-90°. Preferably, the spacing between each of the cutting lines is 1 mm-10 mm; the angle between the second line direction and the first line direction is 60-90°.

[0047] S3: driving the wire transport mechanism to perform a linear upward movement toward the single crystal ingot, and allowing the cutting wire in the wire transport mechanism to simultaneously advance upward along the first wire feed direction and the second wire feed direction to cut the single crystal ingot, to obtain a single crystal wire.

[0048] Specifically, the feed speed of the cutting wire is affected by multiple factors such as the physical properties of the ingot, the cutting requirements, and the material of the cutting wire. In order to ensure the stability of the cutting process and the quality of the single crystal wire, the feed speed of the cutting wire is optionally 0.01-5 mm / min. Preferably, the feed speed is 0.5-2 mm / min.

[0049] After step S3, the method for preparing the single crystal wire further includes: removing the cut single crystal wire from the lifting device of the cutting area, cleaning it to remove impurities such as cutting chips and oil stains on the surface of the single crystal wire, and then performing testing and processing to confirm that the single crystal wire meets the design requirements.

[0050] The method for preparing a single crystal wire provided in an embodiment of the present application increases the flexibility of the cutting process by precisely controlling the layout of the cutting wires, including the spacing and the angle of the wire feed direction. Controlling the cutting wires to simultaneously feed upward along the first wire feed direction and the second wire feed direction to cut the single crystal ingot helps to reduce vibration and deformation during the cutting process, thereby reducing the probability of plastic deformation of the single crystal wire. In addition, the use of diamond abrasives also helps to improve the finish of the cutting surface and reduce cutting damage, thereby ensuring the quality of the single crystal wire.

[0051] Example 3

[0052] The present application also provides an application of a single crystal wire preparation device and method in preparing a metal single crystal wire. The material of the metal single crystal wire includes any one of iron, copper, aluminum, titanium, iron alloy, copper alloy, titanium alloy and aluminum alloy.

[0053] Optionally, the metal single crystal ingot used to prepare the above-mentioned metal single crystal wire can be prepared by at least one of the following methods: Czochralski method, crucible descent method, cold crucible method, kyvo method, zone melting method or casting method. Preferably, the metal single crystal ingot to be cut is prepared by the Czochralski method.

[0054] In order to verify the effect of the single crystal wire preparation device and method described in Examples 1 and 2 above in the preparation of metal single crystal wires, some specific experiments have been conducted on this application according to the implementation method provided by this application, that is, by controlling the type, preparation method and cutting parameters of metal single crystal ingots and other variables, different metal single crystal wires are prepared. It can be seen from these examples that the scheme provided by this application has achieved good results. It should be noted that the following examples are only used to explain the present invention in detail and do not limit the scope of protection of the invention in any way.

[0055] Example 4

[0056] S1: Fix the single crystal copper ingot to be cut on the lifting device and lift it to a preset position;

[0057] S2: Adjust the parameters of the cutting line according to the preset cutting size;

[0058] S3: driving the wire transport mechanism to perform a linear upward movement toward the single crystal ingot, and allowing the cutting wire in the wire transport mechanism to simultaneously advance upward along the first wire feed direction and the second wire feed direction to cut the single crystal ingot, to obtain a single crystal wire.

[0059] The above-mentioned single crystal copper ingot is an equal diameter growth part of a metal single crystal ingot with a diameter of 100 mm and a length of 2 m prepared by a Czochralski method, and one end of the single crystal copper ingot is bonded to a lifting device by glue. The material of the above-mentioned cutting wire is a diamond steel wire, the cutting wire spacing is 1 mm, the feed speed is 1 mm / min, and the angle between the second layer of multi-wire cutting and the first layer of multi-wire cutting is 90°.

[0060] Example 5

[0061] The same preparation method as in Example 4 is adopted, except that the single crystal ingot to be cut is an equal diameter growth portion of a single crystal Fe-Ga ingot with a diameter of 150 mm and a length of 1 m prepared by a crucible lowering method, and one end of the single crystal Fe-Ga ingot is bonded to the lifting device by glue. The material of the cutting wire is diamond tungsten wire, the cutting wire spacing is 5 mm, the feed speed is 0.1 mm / min, and the angle between the second layer of multi-wire cutting and the first layer of multi-wire cutting is 60°.

[0062] Example 6

[0063] The same preparation method as in Example 4 is adopted, except that the single crystal ingot to be cut is an equal diameter growth portion of a single crystal titanium ingot with a diameter of 80 mm and a length of 3 m prepared by a zone melting method, and one end of the single crystal titanium ingot is bonded to a lifting device by glue. The material of the cutting wire is a diamond steel wire, the cutting wire spacing is 3 mm, the feed speed is 0.2 mm / min, and the angle between the second layer of multi-wire cutting and the first layer of multi-wire cutting is 90°.

[0064] Comparative Example 1

[0065] The same metal single crystal ingot as in Example 1 was used to prepare metal single crystal wires of the same quantity and size by a pulling method.

[0066] Comparative Example 2

[0067] Use the same metal single crystal ingot as in Example 1 and cut the ingot multiple times using the single wire cutting method. The metal single crystal ingot is cut into a metal sheet with a thickness of 1 mm for the first time. The metal sheet is rotated 90° and then cut for a second time to be a metal single crystal wire with a width of 1 mm.

[0068] Comparative Example 3

[0069] The same preparation method as in Example 4 is adopted, except that the material of the cutting wire is steel wire.

[0070] The data of the cutting process of the above Examples 4 to 6 and Comparative Examples 1 to 3 were recorded, and the geometric parameters, surface quality, internal structure and performance of the finished metal single crystal wires were tested respectively. The test results are detailed in Table 1.

[0071] Table 1 Preparation process data of metal single crystal wire and finished product test results

[0072]

[0073]

[0074] Experimental conclusion:

[0075] Through the experimental data of the above Examples 4 to 6 and Comparative Example 1, it is possible to calculate and analyze the effects of the single crystal wire preparation method of the present application on the quality and various parameters of the single crystal wire compared to the drawing method, and conclude that the metal single crystal wire prepared by the single crystal wire preparation method of the present application has a high degree of internal grain integrity and does not have polycrystalline phenomenon, which can effectively improve the quality of the metal single crystal wire.

[0076] Through the experimental data of the above Examples 4 to 6 and Comparative Example 2, it can be calculated and analyzed that the influence of the single crystal wire preparation method of the present application on the quality and various parameters of the single crystal wire compared with the single wire cutting method, and it is concluded that the metal single crystal wire prepared by the single crystal wire preparation method of the present application has a better surface condition, a high qualified rate of finished products and a low loss of cutting wire, and there is no need to frequently replace the cutting wire, which effectively improves the preparation efficiency of the metal single crystal wire.

[0077] Through the experimental data of the above Examples 4 to 6 and Comparative Example 3, it can be calculated and analyzed that the use of diamond as a steel wire abrasive in the present application affects the quality and various parameters of single crystal wires compared to ordinary steel wire cutting, and it is concluded that the use of diamond as a cutting wire abrasive can effectively reduce the loss of the cutting wire, eliminate the need for frequent replacement of the cutting wire, and improve the preparation efficiency of metal single crystal wires.

[0078] In summary, it can be seen from the embodiments provided in the present application that the embodiments of the present application effectively improve the preparation efficiency and quality of metal single crystal wires by optimizing the preparation device and method of metal single crystal wires.

[0079] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A single crystal wire preparation device, characterized in that: include: A machine tool body (1), a lifting device (2) arranged on the upper part of the machine tool body (1), a wire transport mechanism (3) and a lifting drive mechanism that perform reciprocating linear motion on the machine tool body (1), wherein the wire transport mechanism (3) comprises a first cutting wheel group (31), a second cutting wheel group (32) located below the first cutting wheel group (31), and a direction-changing roller (33) arranged at the junction of the first cutting wheel group (31) and the second cutting wheel group (32); The first cutting wheel group (31) is wound with a plurality of cutting wires along a first wire feeding direction, the second cutting wheel group (32) is wound with a plurality of cutting wires along a second wire feeding direction, the direction-changing roller (33) is respectively connected to the first cutting wheel group (31) and the second cutting wheel group (32) through the cutting wires, and the angle between the first wire feeding direction and the second wire feeding direction is 1-90°.

2. The single crystal wire preparation device according to claim 1, characterized in that: The first cutting wheel assembly (31) comprises: a first wire-retracting and -releasing wheel (311) and two first wire roller wheels (312) arranged opposite to each other along the first wire-feeding direction.

3. The single crystal wire manufacturing device according to claim 1, characterized in that: The second cutting wheel assembly (32) comprises: a second wire-retracting and -releasing wheel (321) and two second wire roller wheels (322) arranged opposite to each other along the second wire-feeding direction.

4. A single crystal wire manufacturing device according to any one of claims 1 to 3, characterized in that: The cutting wire uses diamond as abrasive.

5. The single crystal wire manufacturing device according to claim 4, characterized in that: The cutting wire is made of either diamond steel wire or diamond tungsten wire.

6. A method for preparing a single crystal wire, characterized in that: include: Fix the single crystal ingot to be cut on the lifting device and lift it to a preset position; According to the preset cutting size, adjusting the parameters of the cutting lines; the parameters include the spacing between each of the cutting lines and the angle between the second line direction and the first line direction; The wire transport mechanism is driven to perform a linear upward movement toward the single crystal ingot, and the cutting wire in the wire transport mechanism simultaneously advances upward along the first wire feed direction and the second wire feed direction to cut the single crystal ingot to obtain a single crystal wire.

7. The method for preparing a single crystal wire according to claim 6, characterized in that: The spacing between the cutting lines is 30 μm-30 cm; The angle between the second line-in direction and the first line-in direction is 1-90°.

8. The method for preparing a single crystal wire according to claim 6, characterized in that: The cutting line has a feed speed of 0.01-5 mm / min.

9. Application of a single crystal wire preparation device and method in preparing metal single crystal wire.

10. Use of the single crystal wire preparation device and method according to claim 9 in preparing metal single crystal wire, characterized in that: The material of the metal single crystal wire includes any one of iron, copper, aluminum, titanium, iron alloy, copper alloy, titanium alloy and aluminum alloy.

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