Substrate processing apparatus and substrate processing method

Abstract

Provided are a substrate processing apparatus and a substrate processing method capable of independently performing processing on a plurality of substrates in a multi-station chamber. A substrate processing apparatus includes a multi-station chamber, a gas supply unit, and a control unit. The multi-station chamber includes a first processing station, a second processing station, a third processing station, and a fourth processing station, each of which may independently perform processing and is configured to perform processing on a plurality of substrates. The gas supply unit is configured to supply a plurality of gases to the first processing station, the second processing station, the third processing station, and the fourth processing station, respectively. The control unit is configured to control the gas supply unit such that the plurality of gases are sequentially supplied to the first to fourth processing stations through the gases alternately supplied among the first, second, third, and fourth processing stations.

Description

Technical Field

[0001] The invention relates to a substrate processing device and a substrate processing method. Background Art

[0002] The present invention relates to a substrate processing device and a substrate processing method, and more particularly, to a substrate processing device and a substrate processing method capable of independently processing a plurality of substrates in a multi-station chamber.

[0003] The substrate processing equipment may be an equipment that deposits reactive particles contained in a processing gas injected into the processing space onto the substrate by a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method after placing the substrate to be processed in the processing space. The substrate processing equipment may be divided into a single wafer-type substrate processing equipment that can perform a processing process on one substrate, and a batch-type substrate processing equipment that can perform a processing process on multiple substrates at the same time.

[0004] Generally speaking, a batch type substrate processing apparatus may accommodate a plurality of substrates in a process tube having a vertical structure in a multi-layer manner to perform a processing process. In the batch type substrate processing apparatus, the process gas may not be vertically injected onto the deposition surface of the substrate, but may be injected laterally, resulting in a limitation that the deposition rate varies with the distance from the nozzle.

[0005] In addition, the single-wafer substrate processing equipment can only process one substrate in one chamber, and thus has the disadvantage of low process yield.

[0006] Therefore, there is a need for a substrate processing apparatus that can perform processes on multiple substrates in one chamber while vertically injecting processing gases onto the deposition surfaces of the substrates.

[0007] [Prior art documents]

[0008] [Patent document]

[0009] Korean Patent No. 10-2028202 Summary of the invention

[0010] The present disclosure provides a substrate processing device and a substrate processing method, wherein a plurality of gases are supplied to a plurality of processing stations respectively, and a different process is performed in each processing station.

[0011] According to one embodiment, a substrate processing device includes: a multi-station chamber, which includes a first processing station, a second processing station, a third processing station and a fourth processing station, each processing station independently performs a process and is configured to perform processes on multiple substrates; a gas supply unit, which is configured to supply a plurality of gases to the first processing station, the second processing station, the third processing station and the fourth processing station, respectively; and a control unit, which is configured to control the gas supply unit so that the plurality of gases are sequentially supplied to the first to fourth processing stations through the gases alternately supplied between the first processing station, the second processing station, the third processing station and the fourth processing station.

[0012] The gas supply unit may include: a first gas supply component configured to supply a first process gas to the multi-station chamber; a second gas supply component configured to supply a second process gas different from the first process gas to the multi-station chamber; a first purge supply component configured to supply the first purge gas to the multi-station chamber; and a second purge supply component configured to supply a second purge gas to the multi-station chamber.

[0013] The control unit can control the first gas supply component, the second gas supply component, the first purge supply component and the second purge supply component so that the first process gas, the second process gas, the first purge gas and the second purge gas are respectively supplied to different process stations of the first process station, the second process station, the third process station and the fourth process station.

[0014] The second processing station may be arranged in a first direction of the first processing station, the fourth processing station may be arranged in a second direction perpendicular to the first direction of the first processing station, and the third processing station may be arranged in a diagonal direction between the first direction and the second direction of the first processing station.

[0015] The control unit can be configured to: control the first gas supply component so that the first processing gas is supplied in the order of the first processing station, the second processing station, the third processing station and the fourth processing station; control the first purge supply component so that the first purge gas is supplied in the order of the fourth processing station, the first processing station, the second processing station and the third processing station; control the second gas supply component so that the second processing gas is supplied in the order of the third processing station, the fourth processing station, the first processing station and the second processing station; and control the second purge supply component so that the second purge gas is supplied in the order of the second processing station, the third processing station, the fourth processing station and the first processing station.

[0016] The first gas supply component may include a first gas storage connected to each of the first processing station, the second processing station, the third processing station, and the fourth processing station, and configured to store the first processing gas to selectively supply the first processing gas to the first processing station, the second processing station, the third processing station, and the fourth processing station; the second gas supply component may include a second gas storage connected to each of the first processing station, the second processing station, the third processing station, and the fourth processing station, and configured to store the second processing gas to selectively supply the second processing gas to the first processing station, the second processing station, the third processing station, and the fourth processing station; A purge supply component may include a first purge reservoir connected to each of the first processing station, the second processing station, the third processing station, and the fourth processing station, and configured to store a first purge gas to selectively supply the first purge gas to the first processing station, the second processing station, the third processing station, and the fourth processing station; and a second purge supply component may include a second purge reservoir connected to each of the first processing station, the second processing station, the third processing station, and the fourth processing station, and configured to store a second purge gas to selectively supply the second purge gas to the first processing station, the second processing station, the third processing station, and the fourth processing station.

[0017] Each of the first gas reservoir and the second gas reservoir may have a different size than each of the first purge reservoir and the second purge reservoir.

[0018] Each of the first purge reservoir and the second purge reservoir may have a size smaller than each of the first gas reservoir and the second gas reservoir.

[0019] The first purge reservoir and the second purge reservoir may have the same size.

[0020] The first gas supply component may also include a plurality of first gas valves, which are arranged between each of the first processing station, the second processing station, the third processing station and the fourth processing station and the first gas storage; the second gas supply component may also include a plurality of second gas valves, which are arranged between each of the first processing station, the second processing station, the third processing station and the fourth processing station and the second gas storage; the first purge supply component may also include a plurality of first purge valves, which are arranged between each of the first processing station, the second processing station, the third processing station and the fourth processing station and the first purge storage; and the second purge supply component may also include a plurality of second purge valves, which are arranged between each of the first processing station, the second processing station, the third processing station and the fourth processing station and the second purge storage.

[0021] The substrate processing apparatus may further include a plurality of valve blocks that respectively support the first gas valve, the second gas valve, the first purge valve, and the second purge valve and are respectively disposed above the first processing station, the second processing station, the third processing station, and the fourth processing station.

[0022] According to another exemplary embodiment, a substrate processing method using a multi-station chamber including a first processing station, a second processing station, a third processing station and a fourth processing station, wherein respective processing is performed independently at each processing station, including: a first process, wherein a plurality of gases are mainly supplied to the first processing station, the second processing station, the third processing station and the fourth processing station, respectively; a second process, wherein a plurality of gases are secondarily supplied, respectively, so that gases different from the gases supplied in the first processing are supplied to the first processing station, the second processing station, the third processing station and the fourth processing station, respectively; a third process, wherein a plurality of gases are supplied for a third time, respectively, so that gases different from the gases supplied in the second processing are supplied to the first processing station, the second processing station, the third processing station and the fourth processing station, respectively; and a fourth process, wherein a plurality of gases are supplied for a fourth time, respectively, so that gases different from the gases supplied in the third processing are supplied to the first processing station, the second processing station, the third processing station and the fourth processing station, respectively.

[0023] The multiple gases may include a first processing gas, a second processing gas different from the first processing gas, a first purge gas, and a second purge gas, wherein the first process may include a process of supplying the first processing gas, the second purge gas, the second processing gas, and the first purge gas to the first processing station, the second processing station, the third processing station, and the fourth processing station, respectively; the second process may include a process of supplying the first purge gas, the first processing gas, the second purge gas, and the second processing gas to the first processing station, the second processing station, the third processing station, and the fourth processing station, respectively; the third process may include a process of supplying the second processing gas, the first purge gas, the first processing gas, and the second purge gas to the first processing station, the second processing station, the third processing station, and the fourth processing station, respectively; and the fourth process may include a process of supplying the second purge gas, the second processing gas, the first purge gas, and the first processing gas to the first processing station, the second processing station, the third processing station, and the fourth processing station, respectively.

[0024] The second processing station may be disposed in a first direction of the first processing station, the fourth processing station may be disposed in a second direction perpendicular to the first direction of the first processing station, and the third processing station 113 may be disposed in a diagonal direction between the first direction and the second direction of the first processing station.

[0025] In the first process, the second process, the third process, and the fourth process, the first process gas and the second process gas may be different from the first purge gas and the second purge gas in at least one of an injection amount, an injection pressure, or an injection speed.

[0026] In the first process, the second process, the third process, and the fourth process, at least one of an injection amount, an injection pressure, or an injection speed of the first purge gas and the second purge gas may be the same. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Exemplary embodiments may be understood in more detail from the following description taken in conjunction with the accompanying drawings, in which:

[0028] Figure 1 is a schematic diagram of a substrate processing apparatus according to an exemplary embodiment;

[0029] Figure 2 is a schematic cross-sectional view of a multi-station chamber according to an exemplary embodiment;

[0030] Figure 3 is a conceptual diagram explaining supply of gas to each process station according to an exemplary embodiment;

[0031] Figure 4 is a flow chart of a substrate processing method according to another exemplary embodiment; and

[0032] Figure 5 is a conceptual diagram explaining supplying gas to each process station by time period according to another exemplary embodiment. DETAILED DESCRIPTION

[0033] Below, specific embodiments will be described in more detail with reference to the accompanying drawings. However, the present invention can be implemented in different forms and should not be construed as being limited to the embodiments described herein. On the contrary, these embodiments are provided so that the present disclosure will be thorough and complete and will fully convey the scope of the present invention to those with ordinary knowledge in the art. In the description, the same components are represented by the same reference numerals. In the figures, the sizes of layers and regions are exaggerated for clarity of description. Throughout the description, the same reference numerals refer to the same components.

[0034] Figure 1 is a schematic diagram of a substrate processing apparatus according to an exemplary embodiment.

[0035] Reference Figure 1According to an exemplary embodiment, a substrate processing device 100 may include a multi-station chamber 110, the multi-station chamber 110 includes a first processing station 111, a second processing station 112, a third processing station 113 and a fourth processing station 114, each processing station performs processing independently and is configured to perform processing on a plurality of substrates 10, a gas supply unit 120 supplies a plurality of gases to the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114, respectively, and a control unit 130 controls the gas supply unit 120 to supply a plurality of gases to the first to fourth processing stations 111, 112, 113 and 114 in sequence by alternately supplying gases between the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114.

[0036] The multi-station chamber 110 may include a first processing station 111, a second processing station 112, a third processing station 113, and a fourth processing station 114 to perform processing on a plurality of substrates 10, and each processing station performs processing independently. Here, the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 may be regionally divided within one multi-station chamber 110, and may be connected to each other, rather than being spatially separated (or isolated) by a partition like a plurality of chambers.

[0037] Here, the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114 can perform processing independently, respectively, and each processing station can include the same configuration, for example, a shower head and a substrate holder, and the number of processing stations may differ only by their location (or area).

[0038] Figure 2 is a schematic cross-sectional view of a multi-station chamber according to an exemplary embodiment. That is, Figure 1 Cross-sectional view of the multi-station chamber along line A-A'.

[0039] Reference Figure 2 Each of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 may include a shower head for injecting gas and a substrate holder for holding (one) substrate 10. The shower head may inject gas for processing the substrate onto the substrate 10, and the substrate holder may hold the substrate 10 to be processed. The gas may be injected onto the substrate 10 held on the substrate holder to perform substrate processing, such as deposition.

[0040] For example, the first processing station 111 may include a first substrate holder 111b for holding a first substrate 10, and a first shower head 111a disposed above the first substrate holder 111b to inject a gas for substrate processing onto the first substrate 10 held on the first substrate holder 111b. The second processing station 112 may include a second substrate holder 112b for holding a second substrate 10, and a second shower head 112a disposed above the second substrate holder 112b to inject a gas for substrate processing onto the second substrate 10 held on the second substrate holder 112b.

[0041] Each of the first shower head 111a and the second shower head 112a may be connected to the gas supply unit 120, and the first shower head 111a and the second shower head 112a may be respectively disposed at the first processing station 111 and the second processing station 112, so that one of a plurality of gases may be selectively supplied and the supplied gas may be injected. Here, the same gas or different gases may be supplied to the first shower head 111a and the second shower head 112a.

[0042] In addition, a first substrate holder 111b and a second substrate holder 112b may be respectively disposed in the first processing station 111 and the second processing station 112 to hold the first substrate 10 and the second substrate 10. Therefore, processing of a plurality of substrates 10 may be simultaneously performed in one multi-task station chamber 110, thereby improving process yield.

[0043] The gas supply unit 120 may selectively supply a plurality of gases to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively. The plurality of gases may be separated to be supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively. The gas supply unit 120 may supply the same gas to all of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. Alternatively, different gases may be supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, or a gas different from other process stations may be supplied to at least one of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. Here, the number of gas supply sources of the gas supply unit 120 may be the same as the number of the plurality of gases or the number of process stations, and the number of process stations and the number of the plurality of gases may also be the same.

[0044] Here, the gas supply unit 120 may include a gas supply source, and a gas supply line for supplying gas from the gas supply source to the first, second, third, and fourth process stations 111, 112, 113, and 114 of the multi-station chamber 110.

[0045] The control unit 130 controls the gas supply unit 120 by alternately supplying gas between the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114, so that a plurality of gases are sequentially (continuously) supplied to the first to fourth processing stations 111, 112, 113, 114, and the supplied gas can be alternately supplied to the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114, or can be supplied sequentially differently from the currently (or existing) supplied gas.

[0046] For example, a plurality of gases may be supplied in a predetermined order to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. Here, the gas to be supplied (next or later) may be determined based on the gas supplied previously, and the gas to be supplied may not overlap (or repeat) with the gas supplied previously.

[0047] Figure 3 is a conceptual diagram explaining supply of gas to each process station according to an embodiment. Figure 3 (a) shows a first process of supplying a first process gas to a first process station. Figure 3 (b) shows a second process of supplying the first process gas to the second process station. Figure 3 (c) shows a third process of supplying the first process gas to the third process station. Figure 3 (d) shows a fourth process of supplying the first process gas to the fourth process station. Here, the multiple gases can be circulated in the following order: first process gas→first purge gas→second process gas→second purge gas, and the first process gas can be supplied after the second purge gas. Since the (supply) starting gas of each process station is different, different gases can be supplied at the same time.

[0048] Reference Figure 1 and Figure 3The gas supply unit 120 may include a first gas supply part 121 supplying a first process gas to the multi-station chamber 110, a second gas supply part 122 supplying a second process gas different from the first process gas to the multi-station chamber 110, a first purge supply part 123 supplying a first purge gas to the multi-station chamber 110, and a second purge supply part 124 supplying a second purge gas to the multi-station chamber 110. The first gas supply part 121 may supply the first process gas to the multi-station chamber 110, and may be connected to each of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 to supply the first process gas. For example, the first gas supply part 121 may include a first process gas supply source connected to a shower head of each of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, and a first process gas supply line that supplies the first process gas from the first process gas supply source to the shower head of each of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. Here, the first process gas may be a source gas S, and may include titanium tetrachloride (TiCl4), dichlorosilane (DCS, SiH2Cl2), or the like.

[0049] The second gas supply part 122 may supply a second process gas different from the first process gas to the multi-station chamber 110, and may be connected to each of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 to supply the second process gas. For example, the second gas supply part 122 may include a second process gas supply source connected to a shower head of each of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, and a second process gas supply line that supplies the second process gas from the second process gas supply source to the shower head of each of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. Here, the second process gas may be a reaction gas R that reacts with the source gas, and may include ammonia (NH3), hydrogen (H2), etc.

[0050] The first purge supply component 123 may supply the first purge gas to the multi-station chamber 110, and may be connected to each of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 to supply the first purge gas. For example, the first purge supply component 123 may include a first purge gas supply source connected to a shower head of each of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114, and a first purge gas supply line that supplies the first purge gas from the first purge gas supply source to the shower head of each of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114. Here, the first purge gas may be a source purge gas SP of a purge source gas (or a first processing gas), or may be an inert gas. The first purge gas may include nitrogen (nitrogen, N2), hydrogen (H2), and argon (argon, Ar), but is not particularly limited thereto.

[0051] The second purge supply component 124 can supply the second purge gas to the multi-station chamber 110, and can be connected to each of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 to supply the second purge gas. For example, the second purge supply component 124 may include a second purge gas supply source connected to the shower head of each of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114, and a second purge gas supply line that supplies the second purge gas from the second purge gas supply source to the shower head of each of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114. Here, the second purge gas may be a reactant purge gas RP of the purge reaction gas (or the second processing gas), or may be an inert gas. The second purge gas may include nitrogen (N2), hydrogen (H2), and argon (Ar), but is not particularly limited thereto. Here, the first purge gas and the second purge gas may be the same or different types of gases, and at least their functions and the supply (or injection) order according to the functions may be different. Depending on the function, at least one of the injection amount, injection pressure, or injection speed of the first purge gas and the second purge gas may be different, or the injection amount, injection pressure, and injection speed may be the same.

[0052] The control unit 130 may control the first gas supply component 121, the second gas supply component 122, the first purge supply component 123, and the second purge supply component 124, so that the first process gas, the second process gas, the first purge gas, and the second purge gas are respectively supplied to different process stations of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. The control unit 130 may control the first gas supply component 121, the second gas supply component 122, the first purge supply component 123, and the second purge supply component 124, so that the first process gas, the second process gas, the first purge gas, and the second purge gas are respectively supplied to different process stations of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, and supply the first process gas, the second process gas, the first purge gas, and the second purge gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively.

[0053] That is, as will be described in detail later in a substrate processing method according to another exemplary embodiment, different gases may be supplied to the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 to perform different processes during the same period (or time). Here, the different gases may be of the same type, but may include a case where the gases differ only in their functions.

[0054] For example, the first processing station 111 may be supplied with a first processing gas (first) to perform a process of depositing a first layer (e.g., a source material layer) or a first atomic layer, the second processing station 112 may be supplied with a second purge gas (first) to perform a process of purging (a second processing gas), the third processing station 113 may be supplied with a second processing gas (first) to perform a process of depositing a second layer (e.g., a reaction material layer) or a second atomic layer, and the fourth processing station 114 may be supplied with a first purge gas (first) to perform a process of purging (a first processing gas). The substrate processing equipment 100 of the present case can perform not only chemical vapor deposition (CVD) but also atomic layer deposition (ALD), and the first processing gas and the second processing gas can be deposited into atomic layer units.

[0055] Therefore, in the substrate processing apparatus 100 according to the exemplary embodiment, a plurality of gases (i.e., a first process gas, a second process gas, a first purge gas, and a second purge gas) may be respectively supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 of the multi-station chamber 110, thereby always supplying a certain amount of gas to the multi-station chamber 110. Therefore, the pressure within the multi-station chamber 110 may be controlled to a stable process pressure, and the process pressure within the multi-station chamber 110 may be constantly (or uniformly) maintained. Therefore, contamination of the multi-station chamber 110 caused by a rapid change in the process pressure within the multi-station chamber 110 due to a change in the gas may be improved.

[0056] In the prior art, since the same gas is simultaneously supplied to the plurality of process stations in the multi-station chamber 110, and the overall gas (or the gas supplied to the plurality of process stations simultaneously) is changed according to the sequence (or time), the process pressure in the multi-station chamber 110 changes rapidly according to the (overall) change of the gas. Therefore, since process residues, particles, etc. adhere to the inner wall of the multi-station chamber 110, the multi-station chamber 110 is easily contaminated, and there is a limitation.

[0057] However, in the present case, only the processing stations to which each gas is supplied are different, but under the same injection conditions (e.g., injection amount, injection pressure, injection speed, etc.), the first processing gas, the second processing gas, the first purge gas, and the second purge gas are always maintained in the multi-station chamber 110, so that the processing pressure in the multi-station chamber 110 can be constantly maintained without a sudden change in the processing pressure in the multi-station chamber 110, and the pressure in the multi-task station chamber 110 can be controlled to a stable processing pressure. Therefore, the limitation of the multi-station chamber 110 in the prior art that it is easily contaminated due to the rapid change in the processing pressure can be improved.

[0058] Here, the second processing station 112 may be arranged in a first direction of the first processing station 111, the fourth processing station 114 may be arranged in a second direction perpendicular to the first direction of the first processing station 111, and the third processing station 113 may be arranged in a diagonal direction between the first direction and the second direction of the first processing station 111. That is, the first processing station 111 and the third processing station 113 may be arranged in a diagonal direction to each other, the second processing station 112 and the fourth processing station 114 may be arranged in a diagonal direction to each other, and the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114 may be arranged in a clockwise or counterclockwise direction. Here, when the first processing gas and the second processing gas are respectively supplied to the first processing station 111 and the third processing station 113, the first purge gas and the second purge gas can be respectively supplied to the second processing station 112 and the fourth processing station 114, and when the first processing gas and the second processing gas are respectively supplied to the second processing station 112 and the fourth processing station 114, the first purge gas and the second purge gas can be respectively supplied to the first processing station 111 and the third processing station 113.

[0059] In this case, even if an additional (separate) air curtain is not configured, each of the first purge gas and the second purge gas can function as an air curtain in the diagonal direction, the process station (space) supplying the first process gas and the process station (space) supplying the second process gas can be separated (or divided), and deposition can be performed independently in the process station supplying the first process gas and the process station supplying the second process gas without affecting each other.

[0060] If a process station supplying a first process gas and a process station supplying a second process gas (for example, the first process station and the third process station or the second process station and the fourth process station) are arranged (contact each other) in the first direction or the second direction, the process station supplying the first process gas and the process station supplying the second process gas may be connected to each other, and therefore, the second process gas may affect the process station supplying the first process gas, and the first process gas may affect the process station supplying the second process gas.

[0061] However, in the present case, when the processing station for supplying the first processing gas and the processing station for supplying the second processing gas are arranged in a diagonal direction, the connection between them may be blocked by the first purge gas and the second purge gas of the processing station for supplying the first purge gas and the processing station for supplying the second purge gas, so as to isolate (separate) the processing station for supplying the first processing gas from the processing station for supplying the second processing gas.

[0062] In addition, the control unit 130 may control the first gas supply part 11 to supply the first process gas in the order of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. The control unit 130 may control the first purge supply part 123 to supply the first purge gas in the order of the fourth process station 114, the first process station 111, the second process station 112, and the third process station 113. The control unit 130 may control the second gas supply part 133 to supply the second process gas in the order of the third process station 113, the fourth process station 114, the first process station 111, and the second process station 112. The control unit 130 may control the second purge supply part 124 to supply the second purge gas in the order of the second process station 112, the third process station 113, the fourth process station 114, and the first process station 111.

[0063] That is, the gas may be supplied to the first process station 111 in the following order: first process gas S→first purge gas SP→second process gas R→second purge gas RP. The gas may be supplied to the second process station 112 in the following order: second purge gas RP→first process gas S→first purge gas SP→second process gas R. The gas may be supplied to the third process station 113 in the following order: second process gas R→second purge gas RP→first process gas S→first purge gas SP. The gas may be supplied to the fourth process station 114 in the following order: first purge gas SP→second process gas R→second purge gas RP→first process gas S.

[0064] Therefore, since different gases are supplied to each processing station at the same time, the amount and / or pressure of the gas supplied to the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114 can be controlled to remain constant, and the thickness uniformity of the film deposited at each processing station can be controlled to remain constant, thereby improving the thickness uniformity of the film deposited at each processing station. That is, since the first processing gas, the second processing gas, the first purge gas and the second purge gas are each (in sequence) supplied to the processing station, the amount and pressure of each gas can be immediately adjusted and reflected. When the same gas is supplied to two or more processing stations at the same time, the amount and / or pressure of the gas between the two or more processing stations may be different, and even if the amount and pressure of the gas are adjusted, the reflectivity of each processing station may be different, and the amount and pressure of the gas may not be well adjusted.

[0065] That is, in the substrate processing equipment 100 of the exemplary embodiment, different processes can be respectively performed in the processing stations by the substrate processing method according to the exemplary embodiment, wherein the first processing gas, the second processing gas, the first purge gas and the second purge gas are respectively supplied to the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114, so that the first processing gas, the first purge gas, the second processing gas and the second purge gas are sequentially supplied to each processing station, so that a thin film with uniform thickness can be deposited in each processing station, and the gas supply efficiency can be improved.

[0066] The first gas supply part 121 may include a first gas storage 121a. The first gas storage 121a is connected to each of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, and stores the first process gas to selectively supply the first process gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. The second gas supply part 122 may include a second gas storage 122a. The second gas storage 122a is connected to each of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, and stores the second process gas to selectively supply the second process gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. The first purge supply part 123 may include a first purge storage 123a. The first purge reservoir 123a is connected to each of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, and stores the first purge gas to selectively supply the first purge gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. The second purge supply part 124 may include a second purge reservoir 124a. The second purge reservoir 124a is connected to each of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, and stores the second purge gas to selectively supply the second purge gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. The first gas storage 121a may be disposed between (or in the middle of) the first process gas supply source and the multi-station chamber 110 to store the first process gas, and may be connected to each of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 to supply the first process gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. Even if instantaneous supply or blocking (or opening / closing) of the first process gas is repeated between the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 through the first gas storage 121a, the injection amount, injection pressure, and injection speed may be kept stable, and the injection amount, injection pressure, and injection speed of the first process gas of each of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 may be effectively controlled.

[0067] For example, the supply and blocking of the first process gas can be achieved by opening and closing a valve, and the supply and blocking of the first process gas as well as the injection amount, injection pressure and injection speed of the first process gas can be adjusted instantly according to the opening and closing of the valve.

[0068] The second gas storage 122a may be disposed between the second process gas supply source and the multi-station chamber 110 to store the second process gas, and may be connected to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 to supply the second process gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. Even if instantaneous supply or blocking of the second process gas is repeated between the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 through the second gas storage 122a, the injection amount, injection pressure, and injection speed may be kept stable, and the injection amount, injection pressure, and injection speed of the second process gas of each of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 may be effectively controlled.

[0069] For example, the supply and blocking of the second process gas can be achieved by opening and closing the valve, and the supply and blocking of the second process gas as well as the injection amount, injection pressure and injection speed of the second process gas can be adjusted instantly according to the opening and closing of the valve.

[0070] The first purge reservoir 123a may be disposed between the first purge gas supply source and the multi-station chamber 110 to store the first purge gas, and may be connected to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 to supply the first purge gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. Even if instantaneous supply or blocking of the first purge gas is repeated between the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 through the first purge reservoir 123a, the injection amount, injection pressure, and injection speed may be kept stable, and the injection amount, injection pressure, and injection speed of the first purge gas of each of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 may be effectively controlled.

[0071] For example, the supply and blocking of the first purge gas can be achieved by opening and closing the valve, and the supply and blocking of the first purge gas and the injection amount, injection pressure and injection speed of the first purge gas can be adjusted instantly according to the opening and closing of the valve.

[0072] The second purge reservoir 124a may be disposed between the second purge gas supply source and the multi-station chamber 110 to store the second purge gas, and may be connected to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 to supply the second purge gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. Even if instantaneous supply or blocking of the second purge gas is repeated between the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 through the second purge reservoir 124a, the injection amount, injection pressure, and injection speed may be kept stable, and the injection amount, injection pressure, and injection speed of the second purge gas of each of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 may be effectively controlled.

[0073] For example, the supply and blocking of the second purge gas can be achieved by opening and closing the valve, and the supply and blocking of the second purge gas and the injection amount, injection pressure and injection speed of the second purge gas can be immediately adjusted according to the opening and closing of the valve.

[0074] Here, the sizes of the first gas reservoir 121a and the second gas reservoir 122a may be different from the sizes of the first purge reservoir 123a and the second purge reservoir 124a. Since the first gas reservoir 121a and the second gas reservoir 122a store the process gases of the first process gas and the second process gas, and the first purge reservoir 123a and the second purge reservoir 124a store the purge gases of the first purge gas and the second purge gas, their sizes may be different from each other. Therefore, the first purge gas and the second purge gas can effectively play the role of an air curtain while performing the purge effect, and the first process gas and the second process gas can be effectively deposited on the substrate 10 without being affected by the first purge gas and the second purge gas.

[0075] Here, the first purge reservoir 121a and the second purge reservoir 122a may be (relatively) smaller than the first gas reservoir 123a and the second gas reservoir 124a. Since the first purge reservoir 121a and the second purge reservoir 122a are respectively smaller than the first gas reservoir 123a and the second gas reservoir 124a, the injection pressure and injection speed (or gas movement speed) of the first purge gas and the second purge gas may be increased, while the injection amount (per unit time) of each of the first purge gas and the second purge gas may be reduced. Therefore, by the high (or large) injection pressure and fast injection speed of each of the first purge gas and the second purge gas, the role of the air curtain can be effectively exerted, and the processing station supplied with the first process gas and the processing station supplied with the second process gas can be effectively separated (or isolated) from each other. In addition, since the first purge gas and the second purge gas each have a high injection pressure and a fast injection speed, the first purge gas and the second purge gas can be directly and quickly discharged without affecting the processing station supplied with the first process gas and the processing station supplied with the second process gas.

[0076] Since the first gas reservoir 123a and the second gas reservoir 124a are (relatively) larger than the first purge reservoir 121a and the second purge reservoir 122a, the injection amount (per unit time) of each of the first process gas and the second process gas may be (relatively) increased to prevent the first purge gas and / or the second purge gas from invading the area (or space) of the process station supplied with the first process gas and the process station supplied with the second process gas, thereby ensuring the deposition space of the first process gas or the second process gas. Therefore, the first process gas and the second process gas can be effectively and uniformly deposited on the substrate 10 without being affected by the first purge gas and the second purge gas. In addition, the injection pressure and injection speed of each of the first process gas and the second process gas can be prevented from being reduced, thereby causing the first process gas and the second process gas to be directly discharged without reacting (depositing) with the surface of the substrate 10.

[0077] In addition, the first purge reservoir 121a and the second purge reservoir 122a may have the same size. The first purge reservoir 121a and the second purge reservoir 122a may have the same size to generate an air curtain in a diagonal direction by the first purge gas and the second purge gas. Therefore, the (processing) pressure in each of the processing station supplied with the first process gas and the processing station supplied with the second process gas may be uniform overall, and the first process gas and the second process gas may be uniformly deposited on the entire surface of the substrate 10. Here, the first purge gas and the second purge gas may be the same type of gas, and the injection amount, injection pressure and injection speed may be the same.

[0078] The first gas reservoir 123a and the second gas reservoir 124a may have the same or different sizes depending on the first process gas and the second process gas.

[0079] The first gas supply component 121 may also include a plurality of first gas valves (not shown). The first gas valve is disposed between each of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 and the first gas storage 121a. The second gas supply component 122 may also include a plurality of second gas valves (not shown). The second gas valve is disposed between each of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 and the second gas storage 122a. The first purge supply component 123 may also include a plurality of first purge valves (not shown). The first purge valve is disposed between each of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 and the first purge storage 123a. The second purge supply component 124 may also include a plurality of second purge valves (not shown). The second purge valve is disposed between each of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 and the second purge reservoir 124a. A plurality of first gas valves (not shown) may be disposed between each of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 and the first gas reservoir 121a, and the control unit 130 may control the first gas supply part 121 so that the first process gas is supplied to the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 in the order of the plurality of first gas valves (not shown).

[0080] A plurality of second gas valves (not shown) may be disposed between each of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 and the second gas storage 122a, and the control unit 130 may control the second gas supply component 122 so that the second processing gas is supplied to the third processing station 113, the fourth processing station 114, the first processing station 111, and the second processing station 112 in the order thereof through the plurality of second gas valves (not shown).

[0081] A plurality of first purge valves (not shown) may be disposed between each of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 and the first purge storage 123a, and the control unit 130 may control the first purge supply component 123 so that the first purge gas is supplied to the fourth processing station 114, the first processing station 111, the second processing station 112, and the third processing station 113 in the order thereof through the plurality of first purge valves (not shown).

[0082] A plurality of second purge valves (not shown) may be disposed between each of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 and the second purge storage 124a, and the control unit 130 may control the second purge supply component 124 so that the second purge gas is supplied to the second processing station 112, the third processing station 113, the fourth processing station 114, and the first processing station 111 in the order thereof through the plurality of second purge valves (not shown).

[0083] Here, according to one embodiment, the substrate processing equipment 100 may further include a plurality of valve blocks (not shown), wherein each valve block supports a first gas valve (not shown), a second gas valve (not shown), a first purge valve (not shown) and a second purge valve (not shown), and the valve block is arranged on the upper part of each of the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114.

[0084] A plurality of valve blocks (not shown) may be disposed on the upper portion of each of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 to support a first gas valve (not shown), a second gas valve (not shown), a first purge valve (not shown), and a second purge valve (not shown) disposed on the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114, respectively.

[0085] For example, a plurality of valve blocks (not shown) may be installed near (or adjacent to) the shower head of each of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114, so that the first gas valve (not shown), the second gas valve (not shown), the first purge valve (not shown), and the second purge valve (not shown) are (directly) connected to (or communicated with) the (each) shower head. Therefore, the plurality of first gas valves (not shown), the plurality of second gas valves (not shown), the plurality of first purge valves (not shown), and the plurality of second purge valves (not shown) may be controlled by the control unit 130 so that each gas may be immediately (or instantaneously) injected (or supplied) or stopped (or blocked). That is, the first processing gas may be injected immediately through the shower head, or the injection of the first processing gas may be stopped according to the opening and closing of the plurality of first gas valves (not shown). The second processing gas may be injected immediately through the shower head, or the injection of the second processing gas may be stopped according to the opening and closing of the plurality of second gas valves (not shown). The first purge gas may be injected immediately through the shower head, or the injection of the first purge gas may be stopped according to the opening and closing of the plurality of first purge valves (not shown). The second purge gas may be immediately injected through the shower head, or the injection of the second purge gas may be stopped according to the opening and closing of a plurality of second purge valves (not shown).

[0086] Therefore, it is possible to suppress or prevent the (temporary) cut-off (or delay) of the gas supply due to the opening and closing of multiple first gas valves (not shown), multiple second gas valves (not shown), multiple first purge valves (not shown) and multiple second purge valves (not shown) according to the change of gas. According to the prior art, since the distance between the (each) shower head and each valve is large, even if the valve is opened, it takes a certain time for the gas to be supplied (or moved) from the valve to the (each) shower head, so the gas may not be directly injected from the (each) shower head. In addition, even if the valve is closed, the gas may still remain between the valve and the (each) shower head, so the gas may not be immediately blocked before all the remaining gas is injected, and the gas may continue to be injected. However, in the present case, a plurality of first gas valves (not shown), a plurality of second gas valves (not shown), a plurality of first purge valves (not shown) and a plurality of second purge valves (not shown) may be installed at a position (as close as possible) to the (each) shower head via a plurality of valve blocks (not shown), and therefore, the first process gas, the second process gas, the first purge gas and the second purge gas may be injected via the (each) shower head, or the injection may be immediately stopped according to the opening and closing of the plurality of first gas valves (not shown), the plurality of second gas valves (not shown), the plurality of first purge valves (not shown) and the plurality of second purge valves (not shown).

[0087] Figure 4 is a flow chart of a substrate processing method according to another exemplary embodiment.

[0088] Reference Figure 4 A method of processing a substrate 10 according to another exemplary embodiment is described. In describing the method of processing a substrate 10 according to another exemplary embodiment, repeated descriptions related to the substrate processing apparatus 100 according to the exemplary embodiment will be omitted.

[0089] According to another exemplary embodiment, a substrate 10 processing method using a multi-station chamber 110 including a first processing station 111, a second processing station 112, a third processing station 113, and a fourth processing station 114, wherein respective processes are independently performed in each processing station. The method may include: a first process S100 to separate multiple gases to mainly supply gases to the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114, a second process S200 to separate multiple gases to secondarily supply gases, so that gases different from the gases supplied in the first process S100 are respectively supplied to the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114, a third process S300 to separate multiple gases to thirdly supply gases, so that gases different from the gases supplied in the second process S200 are respectively supplied to the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114, and a fourth process S400 to separate multiple gases to fourthly supply gases, so that gases different from the gases supplied in the third process S300 are respectively supplied to the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114.

[0090] First, in the first process S100, a plurality of gases may be divided to be mainly supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. A plurality of gases may be divided to be mainly supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. Here, a gas different from a gas supplied to other process stations may be supplied to at least one of the first process station 111, the second process station 112, the third process station 113, or the fourth process station 114.

[0091] Next, in the second process S200, a plurality of gases may be divided to be secondarily supplied so that a gas different from the gas supplied in the first process S100 is supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. A plurality of gases may be divided to be secondarily supplied so that a gas different from the gas supplied in the first process S100 is supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, a gas different from the gas supplied to the other process stations may be supplied to at least one of the first process station 111, the second process station 112, the third process station 113, or the fourth process station 114, and a gas different from the gas supplied in the first process S100 may be supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively.

[0092] Then, in the third process S300, the plurality of gases may be divided to be supplied for a third time so that a gas different from the gas supplied in the second process S200 is supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. The plurality of gases may be divided to be supplied for a third time so that a gas different from the gas supplied in the second process S200 is supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. Here, a gas different from the gas supplied to the other process stations may be supplied to at least one of the first process station 111, the second process station 112, the third process station 113, or the fourth process station 114, and a gas different from the gas supplied in the second process S200 may be supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively. Here, in the third process S300, the gas supplied to the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114 may be different from or the same as the gas supplied in the first process S100 as long as the gas is different from the gas supplied in the second process S200.

[0093] In addition, in the fourth process S400, the plurality of gases may be divided to be supplied a fourth time so that a gas different from the gas supplied in the third process S300 is supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. The plurality of gases may be divided to be supplied a fourth time so that a gas different from the gas supplied in the third process S300 is supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, a gas different from the gas supplied to the other process stations may be supplied to at least one of the first process station 111, the second process station 112, the third process station 113, or the fourth process station 114, and a gas different from the gas supplied in the third process S300 may be supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively. Here, in the fourth process S400, the gas supplied to the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114 may be different from or the same as the gas supplied in the first process S100 and / or the second process S200, as long as the gas is different from the gas supplied in the third process S300.

[0094] Figure 5 is a conceptual diagram explaining supplying gas to each process station by time period according to another exemplary embodiment.

[0095] Reference Figure 5The plurality of gases may include a first process gas, a second process gas different from the first process gas, a first purge gas, and a second purge gas. The first process gas may be a source gas S, and may include titanium tetrachloride (TiCl4), dichlorosilane (DCS, SiH2Cl2), and the like.

[0096] The second process gas may be different from the first process gas and may be a reactant gas R that reacts with the source gas S, and may include ammonia (NH 3 ), hydrogen (H 2 ), or the like.

[0097] The first purge gas may purge the first process gas. The first purge gas may be a source purge gas SP for purging the source gas, and may be an inert gas. The first purge gas may be an inert gas, and may include nitrogen (N2), hydrogen (H2), and argon (Ar), but is not particularly limited thereto.

[0098] The second purge gas can purge the second process gas. The second purge gas can be a reactive purge gas (reactive purge gas) RP for purging the reaction gas, and the second purge gas can be an inert gas. The second purge gas may include nitrogen (N2), hydrogen (H2) and argon (Ar), but is not particularly limited thereto. Here, the first purge gas and the second purge gas may be gases of the same or different types, and at least their functions and the supply (or injection) sequence according to the functions may be different. Depending on the function, at least one of the injection amount, injection pressure or injection rate of the first purge gas and the second purge gas may be different, or the injection amount, injection pressure and injection rate may be the same.

[0099] Here, when the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114 are arranged in a clockwise direction, the supply of the first processing gas can be moved in a clockwise direction in the order of the first processing station 111→the second processing station 112→the third processing station 113→the fourth processing station 114, and the supply of the second processing gas, the first purge gas and the second purge gas can also be moved in a clockwise direction along the arrangement direction of the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114. When the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114 are arranged in a counterclockwise direction, the supply of the first processing gas can move in a counterclockwise direction in the order of the first processing station 111→the second processing station 112→the third processing station 113→the fourth processing station 114, and the supply of the second processing gas, the first purge gas and the second purge gas can also move in a counterclockwise direction along the arrangement direction of the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114.

[0100] In each process, the arrangement direction of each processing station supplying the first processing gas, the first purge gas, the second processing gas, and the second purge gas may be opposite to the arrangement direction of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114. When the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 are arranged in a clockwise direction, the processing stations supplying the first processing gas, the first purge gas, the second processing gas, and the second purge gas may be arranged in a counterclockwise direction; when the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 are arranged in a counterclockwise direction, the processing stations supplying the first processing gas, the first purge gas, the second processing gas, and the second purge gas may be arranged in a clockwise direction.

[0101] Here, the first process S100 may include a process of supplying a first process gas, a second purge gas, a second process gas, and a first purge gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively. The second process S200 may include a process of supplying a first purge gas, a first process gas, a second purge gas, and a second process gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively. The third process S300 may include a process of supplying a second process gas, a first purge gas, a first process gas, and a second purge gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively. The fourth process S400 may include a process of supplying a second purge gas, a second process gas, a first purge gas, and a first process gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively.

[0102] The first process gas, the second purge gas, the second process gas, and the first purge gas may be respectively supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. The first process gas, the second purge gas, the second process gas, and the first purge gas may first be respectively supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, and different gases may be respectively supplied to each process station.

[0103] In addition, the first purge gas SP, the first process gas, the second purge gas RP, and the second process gas may be respectively supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. The first purge gas SP, the first process gas, the second purge gas RP, and the second process gas may be respectively supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, and different gases may be respectively supplied to the respective process stations.

[0104] Next, the second process gas, the first purge gas, the first process gas, and the second purge gas may be respectively supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. The second process gas, the first purge gas, the first process gas, and the second purge gas may be respectively supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, and different gases may be respectively supplied to each process station.

[0105] In addition, the second purge gas, the second process gas, the first purge gas, and the first process gas may be respectively supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. The second purge gas, the second process gas, the first purge gas, and the first process gas may be respectively supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, and different gases may be respectively supplied to the respective process stations.

[0106] That is, the gas may be supplied to the first process station 111 in the following order: first process gas S→first purge gas SP→second process gas R→second purge gas RP. The gas may be supplied to the second process station 112 in the following order: second purge gas RP→first process gas S→first purge gas SP→second process gas R. The gas may be supplied to the third process station 113 in the following order: second process gas R→second purge gas RP→first process gas S→first purge gas SP. The gas may be supplied to the fourth process station 114 in the following order: first purge gas SP→second process gas R→second purge gas RP→first process gas.

[0107] Therefore, since different gases are supplied to each processing station at the same time, the amount and / or pressure of the gas supplied to the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 can be controlled to be constant, so that the thickness uniformity of the film deposited at each processing station is controlled to be constant, thereby improving the thickness uniformity of the film deposited at each processing station. That is, since the first processing gas, the second processing gas, the first purge gas, and the second purge gas are supplied to each processing station respectively (in sequence), the amount and pressure of each gas can be adjusted and reflected in real time. When the same gas is supplied to two or more processing stations at the same time, the amount and / or pressure of the gas between the two or more processing stations may be different, and even if the amount and pressure of the gas are adjusted, the reflectivity of each processing station may be different, and the amount and pressure of the gas may not be well adjusted.

[0108] Therefore, in the substrate processing method according to the embodiment, the first processing gas, the second processing gas, the first purge gas, and the second purge gas can be respectively supplied to the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114, so that the first processing gas, the first purge gas, the second processing gas, and the second purge gas are sequentially supplied to each processing station, so that different processes can be performed at each processing station. Therefore, a thin film with a uniform thickness can be deposited at each processing station, and the gas supply efficiency can be improved.

[0109] Here, the second process station 112 may be arranged in a first direction of the first process station 111, the fourth process station 114 may be arranged in a second direction perpendicular to the first direction of the first process station 111, and the third process station 113 may be arranged in a diagonal direction between the first direction and the second direction of the first process station 111. That is, the first process station 111 and the third process station 113 may be arranged in a diagonal direction to each other, and the second process station 112 and the fourth process station 114 may be arranged in a diagonal direction. Here, when the first process gas and the second process gas are respectively supplied to the first process station 111 and the third process station 113, the first purge gas and the second purge gas may be respectively supplied to the second process station 112 and the fourth process station 114. When the first process gas and the second process gas are respectively supplied to the second process station 112 and the fourth process station 114, the first purge gas SP and the second purge gas RP may be respectively supplied to the first process station 111 and the third process station 113.

[0110] In this case, the first purge gas and the second purge gas can each function as an air curtain in the diagonal direction, the process station (the space) supplied with the first process gas and the process station (the space) supplied with the second process gas can be separated (or divided), and deposition can be performed independently in the process station supplied with the first process gas and the process station supplied with the second process gas without affecting each other.

[0111] If the process station supplied with the first process gas and the process station supplied with the second process gas (for example, the first process station 111 and the third process station 113, or the second process station 112 and the fourth process station 114) are arranged in the first direction or the second direction (contact each other), the process station supplied with the first process gas and the process station supplied with the second process gas may be connected to each other. Therefore, the second process gas may affect the process station supplied with the first process gas, and the first process gas may affect the process station supplied with the second process gas.

[0112] However, as in the present case, when the processing station supplied with the first processing gas and the processing station supplied with the second processing gas are arranged in a diagonal direction, the connection between them may be blocked by the first purge gas and the second purge gas of the processing station supplied with the first purge gas and the processing station supplied with the second purge gas, so as to isolate (separate) the processing station supplied with the first processing gas from the processing station supplied with the second processing gas 114.

[0113] Here, at least one of the injection amount, injection pressure or injection speed of the first process gas and the second process gas in the first process S100, the second process S200, the third process S300 and the fourth process S400 is different from the first purge gas and the second purge gas. At least one of the injection amount (per unit time), injection pressure or injection speed (or gas movement speed) of the first process gas and the second process gas in the first process S100, the second process S200, the third process S300 and the fourth process S400 may be different from the first purge gas and the second purge gas. Therefore, the first purge gas and the second purge gas can effectively play the role of air curtain while performing the purge function, and the first process gas and the second process gas can be effectively deposited on the substrate 10 without being affected by the first purge gas and the second purge gas.

[0114] For example, due to the size difference between the first gas reservoir 121a, the second gas reservoir 122a, the first purge reservoir 123a, and the second purge reservoir 124a, at least one of the injection amount, injection pressure, or injection speed of the first process gas and the second process gas may be different from that of the first purge gas and the second purge gas.

[0115] In addition, in the first process S100, the second process S200, the third process S300, and the fourth process S400, at least one of the injection amount, injection pressure, or injection speed of the first purge gas and the second purge gas may be the same. At least one of the injection amount, injection pressure, or injection speed of the first purge gas and the second purge gas in the first process S100 may be the same, and thus, the air curtain formed by the first purge gas and the second purge gas may be formed in a diagonal direction. Therefore, the (processing) pressure in the processing station supplied with the first process gas and the processing station supplied with the second process gas may be uniform in general, and the first process gas and the second process gas may be uniformly deposited on the entire surface of the substrate 10. For example, the first purge reservoir 123a and the second purge reservoir 124a may have the same size, and thus, at least one of the injection amount, injection pressure, or injection speed of the first purge gas and the second purge gas may be the same.

[0116] The first process S100 to the fourth process S400 may be a cycle, and according to the required deposition thickness, the first process S100 to the fourth process S400 may be repeated in sequence (or in a cycle). Here, the substrate processing method according to the embodiment may further include a process S450 of supplying the first purge gas and / or the second purge gas to at least the second processing station 112 and the fourth processing station 114 among the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114.

[0117] The first purge gas and / or the second purge gas may be supplied to at least the second process station 112 and the fourth process station 114 among the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. After repeating the cycle as many times as n required, the first purge gas and / or the second purge gas may be supplied to at least the second process station 112 and the fourth process station 114 among the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, and in the cycle, since the respective processes are completed using the first process gas and the second process gas in the fourth process station 114 and the second process station 112, respectively, the purge of the second process gas and the purge of the first process gas may not be performed in the second process station 112 and the fourth process station 114. Therefore, the residual gas (water) of the second process gas and the residual gas (water) of the first process gas may remain. Therefore, the first purge gas and / or the second purge gas may be supplied to at least the second processing station 112 and the fourth processing station 114 among the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114, so that the residual gas of the second processing gas can be removed from the second processing station 112, and the residual gas of the first processing gas can be removed from the fourth processing station 114.

[0118] When only the first purge gas and / or the second purge gas is supplied to the second processing station 112 and the fourth processing station 114, due to the pressure difference of each processing station, the residual gas (water) of the second processing gas and the residual gas (water) of the first processing gas diffuse to the first processing station 111 and / or the third processing station 113, so the first purge gas and / or the second purge gas can be supplied to all of the first processing station 111, the second processing station 112, the third processing station 113 and the fourth processing station 114.

[0119] As described above, in the present case, a plurality of gases may be supplied to the first processing station, the second processing station, the third processing station and the fourth processing station of the multi-station chamber, respectively, so as to always supply a certain amount of gas to the multi-station chamber. Therefore, the stable process pressure in the multi-station chamber can be controlled, and the multi-station chamber contamination caused by the rapid change of the process pressure in the multi-station chamber 110 due to the change of gas can be improved. In addition, the amount and / or pressure of gas supplied between the first processing station, the second processing station, the third processing station and the fourth processing station can be constantly controlled to improve the thickness uniformity of the film deposited in each processing station. That is, the first processing gas, the second processing gas, the first purge gas and the second purge gas may be supplied to the first processing station, the second processing station, the third processing station and the fourth processing station, respectively, so as to sequentially supply the first processing gas, the first purge gas, the second processing gas and the second purge gas to each processing station. Therefore, each processing station can perform different processes. Therefore, a film with uniform thickness can be deposited in each processing station, and the gas supply efficiency can be improved. In addition, a first process gas, a first purge gas, a second process gas, and a second purge gas may be sequentially supplied to perform atomic layer deposition of a thin film, and the supply of each of the first process gas, the first purge gas, the second process gas, and the second purge gas may be precisely controlled so that the thin film is uniformly deposited at an atomic level over the entire surface of the substrate.

[0120] The substrate processing apparatus according to the exemplary embodiment can supply a plurality of gases to the first processing station, the second processing station, the third processing station and the fourth processing station of the multi-station chamber respectively, so as to always supply a certain amount of gas to the multi-station chamber. Therefore, a stable process pressure in the multi-station chamber can be controlled, and contamination of the multi-station chamber caused by a rapid change in process pressure in the multi-station chamber due to gas changes can be improved.

[0121] Furthermore, the amount and / or pressure of gas supplied between the first, second, third, and fourth process stations may be constantly controlled to improve thickness uniformity of a thin film deposited in each process station.

[0122] That is, through the substrate processing method, the first processing gas, the second processing gas, the first purge gas and the second purge gas can be supplied to the first processing station, the second processing station, the third processing station and the fourth processing station, respectively, so as to sequentially supply the first processing gas, the first purge gas, the second processing gas and the second purge gas to each processing station, thereby performing different processes in the processing stations, respectively. Therefore, a thin film with uniform thickness can be deposited in each processing station, and the gas supply efficiency can be improved.

[0123] In addition, a first processing gas, a first purge gas, a second processing gas, and a second purge gas can be supplied in sequence to perform atomic layer deposition (ALD) of the thin film, and the supply of the first processing gas, the first purge gas, the second processing gas, and the second purge gas can be stably and precisely controlled so that the thin film is uniformly deposited at the atomic level on the entire surface of the substrate.

[0124] Although the embodiments have been described with reference to a number of exemplary embodiments, the embodiments are not limited to the foregoing embodiments, and therefore, it should be understood that a person skilled in the art may design many other modifications and embodiments that fall within the spirit and scope of the principles of the present disclosure. Therefore, the true protection scope of the present invention should be determined by the technical scope of the appended claims.

Claims

1. A substrate processing device, characterized in that: include: a multi-station chamber including a first processing station, a second processing station, a third processing station, and a fourth processing station, each processing station independently performing a process and configured to perform a process on a plurality of substrates; a gas supply unit configured to supply a plurality of gases to the first processing station, the second processing station, the third processing station, and the fourth processing station, respectively; as well as The control unit is configured to control the gas supply unit so that the plurality of gases are sequentially supplied to the first to fourth processing stations by alternately supplying gases among the first, second, third and fourth processing stations.

2. The substrate processing equipment according to claim 1, characterized in that: The gas supply unit comprises: a first gas supply component configured to supply a first process gas to the multi-station chamber; a second gas supply component configured to supply a second process gas different from the first process gas to the multi-station chamber; a first purge supply component configured to supply a first purge gas to the multi-station chamber; and The second purge supply component is configured to supply a second purge gas to the multi-station chamber.

3. The substrate processing equipment according to claim 2, characterized in that: The control unit controls the first gas supply component, the second gas supply component, the first purge supply component, and the second purge supply component so that the first process gas, the second process gas, the first purge gas, and the second purge gas are respectively supplied to different process stations among the first process station, the second process station, the third process station, and the fourth process station.

4. The substrate processing equipment according to claim 3, characterized in that: The second processing station is arranged in a first direction of the first processing station, The fourth processing station is arranged in a second direction perpendicular to the first direction, and The third processing station is disposed in a diagonal direction between the first direction and the second direction of the first processing station.

5. The substrate processing equipment according to claim 4, characterized in that: The control unit is configured to: controlling the first gas supply component so that the first process gas is supplied in the order of the first process station, the second process station, the third process station, and the fourth process station; controlling the first purge supply component so that the first purge gas is supplied in the order of the fourth processing station, the first processing station, the second processing station, and the third processing station; controlling the second gas supply component so that the second process gas is supplied in the order of the third process station, the fourth process station, the first process station, and the second process station; as well as The second purge supply part is controlled so that the second purge gas is supplied in the order of the second process station, the third process station, the fourth process station and the first process station.

6. The substrate processing equipment according to claim 2, characterized in that: The first gas supply part includes a first gas storage connected to each of the first process station, the second process station, the third process station, and the fourth process station and configured to store the first process gas to selectively supply the first process gas to the first process station, the second process station, the third process station, and the fourth process station, The second gas supply part includes a second gas storage connected to each of the first process station, the second process station, the third process station, and the fourth process station and configured to store the second process gas to selectively supply the second process gas to the first process station, the second process station, the third process station, and the fourth process station, the first purge supply part includes a first purge reservoir connected to each of the first process station, the second process station, the third process station, and the fourth process station and configured to store the first purge gas to selectively supply the first purge gas to the first process station, the second process station, the third process station, and the fourth process station, and The second purge supply part includes a second purge reservoir connected to each of the first process station, the second process station, the third process station, and the fourth process station and configured to store the second purge gas to selectively supply the second purge gas to the first process station, the second process station, the third process station, and the fourth process station.

7. The substrate processing equipment according to claim 6, characterized in that: Each of the first gas reservoir and the second gas reservoir has a size different from each of the first purge reservoir and the second purge reservoir.

8. The substrate processing equipment according to claim 7, characterized in that: Each of the first purge reservoir and the second purge reservoir has a size smaller than each of the first gas reservoir and the second gas reservoir.

9. The substrate processing equipment according to claim 6, characterized in that: The first purge reservoir and the second purge reservoir have the same size.

10. The substrate processing equipment according to claim 6, characterized in that: The first gas supply component further includes a plurality of first gas valves, the plurality of first gas valves being disposed between each of the first processing station, the second processing station, the third processing station, and the fourth processing station and the first gas storage. The second gas supply component further includes a plurality of second gas valves, and the plurality of second gas valves are disposed between each of the first processing station, the second processing station, the third processing station, and the fourth processing station and the second gas storage. The first purge supply component further includes a plurality of first purge valves, the plurality of first purge valves being disposed between each of the first processing station, the second processing station, the third processing station, and the fourth processing station and the first purge reservoir, and The second purge supply part further includes a plurality of second purge valves disposed between each of the first, second, third, and fourth processing stations and the second purge reservoir.

11. The substrate processing equipment according to claim 10, characterized in that: It also includes a plurality of valve blocks, the first gas valve, the second gas valve, the first purge valve and the second purge valve are respectively held on the plurality of valve blocks, and the plurality of valve blocks are respectively arranged on the upper parts of the first processing station, the second processing station, the third processing station and the fourth processing station.

12. A substrate processing method using a multi-station chamber, characterized in that: The multi-station chamber includes a first processing station, a second processing station, a third processing station and a fourth processing station, wherein each process is performed independently, and the substrate processing method includes: In a first process, a plurality of gases are mainly supplied to the first processing station, the second processing station, the third processing station and the fourth processing station respectively; In a second process, the plurality of gases are respectively and secondarily supplied so that gases different from the gases supplied in the first process are respectively supplied to the first processing station, the second processing station, the third processing station and the fourth processing station; a third process, supplying the plurality of gases for a third time respectively, so that gases different from the gases supplied in the second process are supplied to the first processing station, the second processing station, the third processing station, and the fourth processing station respectively; and In a fourth process, the plurality of gases are supplied for a fourth time, so that gases different from the gases supplied in the third process are supplied to the first processing station, the second processing station, the third processing station, and the fourth processing station, respectively.

13. The substrate processing method according to claim 12, characterized in that: The plurality of gases include a first process gas, a second process gas different from the first process gas, a first purge gas, and a second purge gas, The first process includes supplying the first processing gas, the second purge gas, the second processing gas and the first purge gas to the first processing station, the second processing station, the third processing station and the fourth processing station respectively; The second process includes supplying the first purge gas, the first process gas, the second purge gas, and the second process gas to the first process station, the second process station, the third process station, and the fourth process station, respectively; The third process includes supplying the second process gas, the first purge gas, the first process gas, and the second purge gas to the first process station, the second process station, the third process station, and the fourth process station, respectively; as well as The fourth process includes supplying the second purge gas, the second process gas, the first purge gas, and the first process gas to the first process station, the second process station, the third process station, and the fourth process station, respectively.

14. The substrate processing method according to claim 13, characterized in that: The second processing station is arranged in a first direction of the first processing station, The fourth processing station is arranged in a second direction perpendicular to the first direction, and The third processing station is disposed in a diagonal direction between the first direction and the second direction of the first processing station.

15. The substrate processing method according to claim 14, characterized in that: In the first process, the second process, the third process, and the fourth process, the first process gas and the second process gas are different from the first purge gas and the second purge gas in at least one of injection amount, injection pressure, or injection speed.

16. The substrate processing method according to claim 14, characterized in that: In the first process, the second process, the third process, and the fourth process, at least one of an injection amount, an injection pressure, or an injection speed of the first purge gas and the second purge gas is the same.

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