Optical-electric dual-mode flexible sensor array and preparation method thereof

Abstract

The invention provides an optical-electric dual-mode flexible sensor array and a preparation method thereof. The flexible sensor array comprises an upper flexible substrate, an upper electrode layer, an upper protective layer, and a lower protective layer, a lower electrode layer and a lower flexible substrate which are symmetrically arranged in sequence by taking a dielectric layer as a center, the electrode layer leads out the lead area through a wire; the dielectric layer comprises a stress light-emitting array; the method comprises the following steps: preprocessing a flexible substrate; printing a conductive material on the pretreated flexible substrate through a printing process, leading out the conductive material through a wire, and drying the conductive material to form an electrode layer; scraping a flexible high polymer material on the electrode layer, and curing to form a protective layer; carrying out 3D printing on a dielectric material prepared by mixing stress luminescent particles and a flexible high polymer material on the protective layer, and curing to form a dielectric layer; and packaging to obtain the product. The optical-electric dual-mode flexible sensor array has the characteristics of high sensitivity, high precision, visual stress distribution and the like. And the preparation process is simple, efficient and low in cost.

Description

Technical Field

[0001] The present invention relates to the field of sensor technology, and in particular to an optical-electrical dual-mode flexible sensor array and a preparation method thereof. Background Art

[0002] Sensors are the foundation of modern industry. From personal life, enterprise production to national strategic projects, stress sensors have been widely used in various fields. In recent years, emerging application markets such as artificial intelligence, metaverse, Internet of Things, and biotechnology have led to the diversification and specialization of stress sensors. Resolution, stretchability (flexibility), remote sensing, stress spatial distribution, and multimodal properties have become important performance characteristics of advanced stress sensing.

[0003] In many fields such as electronic skin, biomechanics / biomedical engineering, and engineering structure monitoring, the demand for stress detection spatial resolution has reached the sub-millimeter or even micron level. Traditional electronic sensors use a large number of independent sensor units to obtain spatial stress distribution through a passive matrix array. Currently, the resolution of most consumer-grade piezoresistive sensors is in the range of several millimeters to centimeters. For electronic sensors that need to achieve higher spatial resolution stress detection, the increase in resolution often leads to problems such as complex manufacturing processes, high costs, and difficulty in large-scale manufacturing.

[0004] Stress sensors based on mechanoluminescence (ML) materials are an excellent sensing strategy for stress distribution, which shows significant advantages in distributed detection and remote response to stress. In addition, since no electronic conduction is required, excellent stretchability, biocompatibility and self-powering capabilities can be achieved within the stress-photon conduction unit. However, the luminescent response of mechanoluminescence materials to stress magnitude is easily affected by the detection method, device preparation process and the material's own luminescence fatigue quenching. At present, stress sensors based on the stress luminescence phenomenon are severely limited in their application and development due to the inherent low sensitivity and low precision of the material.

[0005] Therefore, the present invention designs an optical-electrical dual-mode flexible sensor and a preparation method thereof which has a simple preparation process, low cost and is suitable for manufacturing large-area array sensors. Summary of the invention

[0006] The present invention provides an optical-electrical dual-mode flexible sensor array and a preparation method thereof, the purpose of which is to solve the above-mentioned problems existing in the background technology.

[0007] In order to achieve the above objectives, the present invention realizes a flexible sensor array with high sensitivity, high precision and visualized stress distribution through a simple, efficient and low-cost preparation scheme.

[0008] An embodiment of the present invention provides a method for preparing an optical-electrical dual-mode flexible sensor array, comprising the following steps:

[0009] S1: flexible substrate pretreatment;

[0010] S2: Printing the conductive material onto the pre-treated flexible substrate through a printing process, and leading out the lead area with a wire, drying, and forming an electrode layer;

[0011] S3: scraping a flexible polymer material on the electrode layer, and curing it to form a protective layer;

[0012] S4: The dielectric material prepared by mixing the stress luminescent particles with the flexible polymer material is 3D printed on the protective layer, and is cured to form a dielectric layer;

[0013] S5: Encapsulate the protective layer on the upper and lower surfaces of the dielectric layer respectively, and encapsulate the edge.

[0014] Preferably, in step S1, the flexible substrate is transparent, and the material is selected from any one of polyvinyl alcohol PVA, polyethylene terephthalate PET, polyethylene naphthalate PEN, and polyimide PI; the pretreatment process includes surface treatment using ultraviolet light, ozone, or corona; the printing process includes any one of screen printing, inkjet printing, or coating. In order to ensure that the image formed by stress luminescence can be effectively transmitted, the flexible substrate should have high transparency while having a certain degree of support.

[0015] Preferably, in step S2, the conductive material is translucent or transparent, and is selected from any one of carbon nanomaterials, poly(3,4-ethylenedioxythiophene): polystyrene sulfonate PEDOT:PSS, silver nanowires AgNWs, indium tin oxide ITO, and zinc aluminum oxide AZO; and the wire (such as copper wire) is fixed in the lead area by a silver paste dispensing process. In order to ensure that the image formed by stress luminescence can be effectively conducted, the conductive material should have good transparency while ensuring conductivity.

[0016] Preferably, in step S3, in addition to the scraping method, inkjet printing or coating methods can also be used.

[0017] Preferably, the flexible polymer material is translucent or transparent, and is selected from at least one of polydimethylsiloxane (PDMS), thermoplastic polyurethane elastomer (TPU), and copolymer of vinylidene fluoride and hexafluoropropylene (PVDF-HFP). In order to ensure that the image formed by stress luminescence can be effectively transmitted and suitable for printing on its surface, the flexible polymer material should have good affinity and good transparency.

[0018] Preferably, in step S4, the stress luminescent particles are pressure-induced stress luminescent materials, including sulfide systems such as ZnS:Mn 2+ , Sulfur oxide systems such as CaZnOS:Mn 2+ , titanate system, phosphate system, silicate system, with a particle size of 0.1 to 100 μm.

[0019] Preferably, in step S4, the process of preparing the dielectric material further includes adding 5% nano-silicon dioxide to adjust the rheological properties of the mixture; the stress luminescent particles and the flexible polymer material are mixed in a mass ratio of 1:5 to 5:1; and the 3D printing adopts a direct ink writing method.

[0020] Based on a general inventive concept, an embodiment of the present invention provides an optical-electrical dual-mode flexible sensor array, comprising:

[0021] Dielectric layer, protective layer, electrode layer, flexible substrate;

[0022] Wherein, the dielectric layer is arranged between the upper protective layer and the lower protective layer;

[0023] The upper protective layer is disposed on the upper electrode layer;

[0024] The upper electrode layer is disposed on the upper flexible substrate;

[0025] An upper flexible substrate, an upper electrode layer, an upper protective layer, a lower protective layer, a lower electrode layer, and a lower flexible substrate are symmetrically arranged in sequence with the dielectric layer as the center;

[0026] The upper electrode layer and the lower electrode layer lead out the lead area through wires;

[0027] The dielectric layer includes a stress luminous array, the lower protective layer provides attachment and support for the stress luminous array, and the dielectric layer also includes air, which together with the stress luminous array serves as a medium.

[0028] Preferably, the stress luminescence array comprises N×M conical stress luminescence sensing units.

[0029] Preferably, the bottom diameter of the stress luminescent sensor unit is 0.1-2 mm, the height is 0.1-2 mm, and the spacing between the stress luminescent sensor units is greater than the bottom diameter of the stress luminescent sensor unit. The spacing, number, size and shape of the stress luminescent sensor units can also be selected according to actual conditions.

[0030] Preferably, the response pressure of the optical-electrical dual-mode flexible sensor array is 0.21 to 160 kPa;

[0031] When the pressure exceeds 60kPa, the sensitivity reaches 1.212MPa -1 ;

[0032] When the pressure is 0.21~10kPa, the sensitivity reaches 21.816MPa -1 .

[0033] The above scheme of the present invention has the following beneficial effects:

[0034] (1) The present invention combines the advantages of traditional electronic sensors and new stress luminescence sensors. The stress luminescence sensor array can accurately display the stress distribution through the high-resolution luminescence imaging presented. Due to the stress concentration effect at the top of the stress luminescence sensing unit, when subjected to a small stress, a large stress will be generated locally, thereby greatly reducing the threshold of stress luminescence and increasing the intensity of stress luminescence. The capacitive flexible pressure sensor composed of the stress luminescence array, a flexible substrate, an electrode layer, and a protective layer can output the stress magnitude with high sensitivity and high accuracy.

[0035] (2) The simple structural design of the optical-electrical dual-mode flexible sensor of the present invention also makes the preparation process simpler, the preparation cost lower, and is suitable for the manufacture of large-area array sensors.

[0036] (3) The optical-electrical dual-mode flexible sensor of the present invention can be applied to wearable devices, electronic skin, large equipment, engineering stress detection and other fields. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0038] Figure 1 This is a schematic diagram of the overall structure of an optical-electrical dual-mode flexible sensor array according to an embodiment of the present invention;

[0039] Figure 2 A schematic diagram of a partial structure of an optical-electrical dual-mode flexible sensor array according to an embodiment of the present invention;

[0040] Figure 3 A top view of a stress luminescence array in an optical-electrical dual-mode flexible sensor array according to an embodiment of the present invention;

[0041] Figure 4 A schematic diagram of an optical-electrical dual-mode flexible sensor array plus an external object according to an embodiment of the present invention;

[0042] Figure 5 A sensing schematic diagram of an optical-electrical dual-mode flexible sensor array according to an embodiment of the present invention;

[0043] Figure 6 Schematic diagram of the force application process of the optical-electrical dual-mode flexible sensor array according to an embodiment of the present invention.

[0044] Figure 7 is a graph showing the relationship between sensitivity and stress of an optical-electrical dual-mode flexible sensor array according to an embodiment of the present invention;

[0045] Figure 8 A diagram showing the relationship between time and capacitance of an optical-electrical dual-mode flexible sensor array in a pressure test according to an embodiment of the present invention;

[0046] Fig. 9 This is a diagram of the stress distribution shape of the stress luminescence array of the optical-electrical dual-mode flexible sensor array according to an embodiment of the present invention, where I is a circle, II is a triangle, III is a square, and IV is a pentagon;

[0047] Fig.10 FIG. 4 is a graph showing the relationship between time and luminous intensity during a pressure test of an optical-electrical dual-mode flexible sensor array according to an embodiment of the present invention.

[0048] [Description of Reference Numerals]

[0049] 1-upper flexible substrate; 2-upper electrode layer; 3-upper protective layer; 4-lower protective layer; 5-lower electrode layer; 6-lower flexible substrate; 7-stress luminescent array; 8-lead area; 9-conducting wire; 10-air; 11-stress luminescent sensing unit; 12-external object; 13-optical-electrical dual-mode flexible sensor array; 14-stress luminescent area; 15-electronic conduction. DETAILED DESCRIPTION

[0050] In order to make the technical problems, technical solutions and advantages to be solved by the present invention more clear, a detailed description will be given below with reference to the accompanying drawings and specific embodiments.

[0051] Unless otherwise defined, all professional terms used below have the same meanings as those generally understood by those skilled in the art. The professional terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the scope of protection of the present invention.

[0052] Unless otherwise specified, various raw materials, reagents, instruments and equipment used in the present invention can be purchased from the market or prepared by existing methods.

[0053] In the description of the present application document, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. In the description of the present application document, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", and "set" should be understood in a broad sense, for example, they can be fixedly connected or set, or detachably connected or set, or connected or set in one piece. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to the specific circumstances.

[0054] The "addition of 5% nano-silicon dioxide" mentioned below specifically refers to a mass ratio of nano-silicon dioxide to flexible polymer material of 1:20.

[0055] In view of the existing problems, the present invention provides an optical-electrical dual-mode flexible sensor array 13 and a preparation method thereof. The overall structural schematic diagram of the optical-electrical dual-mode flexible sensor array 13 is shown in FIG. Figure 1 The preparation method comprises the following steps:

[0056] S1: flexible substrate pretreatment;

[0057] S2: Printing the conductive material onto the pre-treated flexible substrate through a printing process, and leading out the lead area 8 with a wire 9, drying, and forming an electrode layer;

[0058] S3: scraping a flexible polymer material on the electrode layer, and curing it to form a protective layer;

[0059] S4: The dielectric material prepared by mixing the stress luminescent particles with the flexible polymer material is 3D printed on the protective layer, and is cured to form a dielectric layer;

[0060] S5: Encapsulate the protective layer on the upper and lower surfaces of the dielectric layer respectively, and encapsulate the edge.

[0061] Preferably, in step S1, the flexible substrate is transparent, and the material is selected from any one of polyvinyl alcohol PVA, polyethylene terephthalate PET, polyethylene naphthalate PEN, and polyimide PI; the pretreatment process includes surface treatment using ultraviolet light, ozone, or corona; the printing process includes any one of screen printing, inkjet printing, or coating. In order to ensure that the image formed by stress luminescence can be effectively transmitted, the flexible substrate should have high transparency while having a certain degree of support.

[0062] Preferably, in step S2, the conductive material is translucent or transparent, and is selected from any one of carbon nanomaterials, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate PEDOT:PSS, silver nanowires AgNWs, indium tin oxide ITO, and zinc aluminum oxide AZO; and the silver paste dispensing process is used to fix the wire 9 (such as a copper wire) in the lead area 8. In order to ensure that the image formed by stress luminescence can be effectively conducted, the conductive material should have good transparency while ensuring conductivity.

[0063] Preferably, in step S3, in addition to the scraping method, inkjet printing or coating methods can also be used.

[0064] Preferably, the flexible polymer material is at least one of polydimethylsiloxane (PDMS), thermoplastic polyurethane elastomer (TPU), and copolymer of vinylidene fluoride and hexafluoropropylene (PVDF-HFP). In order to ensure that the image formed by stress luminescence can be effectively transmitted and suitable for printing on its surface, the flexible polymer material should have good affinity and good transparency.

[0065] Preferably, in step S4, the stress luminescent particles are pressure-induced stress luminescent materials, including sulfide systems such as ZnS:Mn 2+ , Sulfur oxide systems such as CaZnOS:Mn 2+ , titanate system, phosphate system, silicate system, with a particle size of 0.1 to 100 μm.

[0066] Preferably, in step S4, the process of preparing the dielectric material further includes adding 5% nano-silicon dioxide to adjust the rheological properties of the mixture; the stress luminescent particles and the flexible polymer material are mixed in a mass ratio of 1:5 to 5:1; and the 3D printing adopts a direct ink writing method.

[0067] Based on an overall concept of the invention, an embodiment of the present invention provides an optical-electrical dual-mode flexible sensor array 13, comprising:

[0068] Dielectric layer, protective layer, electrode layer, flexible substrate;

[0069] Wherein, the dielectric layer is arranged between the upper protective layer 3 and the lower protective layer 4;

[0070] The upper protective layer 3 is arranged on the upper electrode layer 2;

[0071] The upper electrode layer 2 is arranged on the upper flexible substrate 1;

[0072] An upper flexible substrate 1, an upper electrode layer 2, an upper protective layer 3, a lower protective layer 4, a lower electrode layer 5, and a lower flexible substrate 6 are symmetrically arranged in sequence with the dielectric layer as the center;

[0073] The upper electrode layer 2 and the lower electrode layer 5 are led out to the lead area 8 through the wire 9;

[0074] The dielectric layer includes a stress luminous array 7, and the lower protective layer 4 provides adhesion and support for the stress luminous array 7. The dielectric layer also includes air 10, and the air 10 and the stress luminous array 7 serve as a medium together.

[0075] Preferably, the stress luminous array 7 includes N×M conical stress luminous sensing units 11. The spacing, quantity, size and shape of the stress luminous sensing units 11 in the stress luminous array 7 can be selected according to actual conditions.

[0076] Preferably, the stress luminescent sensing unit 11 has a bottom diameter of 0.1-2 mm and a height of 0.1-2 mm, and the spacing between the stress luminescent sensing units 11 is greater than the bottom diameter of the sensing unit.

[0077] Preferably, the response pressure of the optical-electrical dual-mode flexible sensor array 13 is 0.21 to 160 kPa;

[0078] When the pressure exceeds 60kPa, the sensitivity reaches 1.212MPa -1 ;

[0079] When the pressure is 0.21~10kPa, the sensitivity reaches 21.816MPa -1 .

[0080] The following will describe in detail a method for preparing a photoelectric dual-mode flexible sensor array 13 in conjunction with a specific implementation case, which specifically includes the following steps:

[0081] Step 1, pretreatment of the lower flexible substrate 6: take a clean flexible substrate PET film and perform UV surface treatment for 20 minutes;

[0082] Step 2, preparing the lower electrode layer 5: printing an alcohol solution of silver nanowires (AgNWs) on the pre-treated lower flexible substrate 6 by screen printing, and fixing the wire 9 made of copper wire in the lead area 8 by dispensing process with silver paste, and drying and solidifying;

[0083] Step 3, preparing the lower protective layer 4: scraping PDMS solution on the lower electrode layer 5 and curing at 80° C. for 1 h;

[0084] Step 4, preparing stress luminescent array 7: ZnS:Mn with an average particle size of 10 μm 2+ The powder particles are uniformly mixed with the PDMS solution as ink, and N×M conical stress luminescent sensing units 11 are printed on the lower protective layer 4 based on the direct ink writing 3D printing technology, and cured at 80° C. for 1 hour;

[0085] Step 5, assemble the optical-electrical dual-mode flexible sensor array 13: repeat steps 1 to 3 to prepare the upper flexible substrate 1, the upper electrode layer 2 and the upper protective layer 3, and install the upper flexible substrate 1, the upper electrode layer 2 and the upper protective layer 3 symmetrically with the lower protective layer 4, the lower electrode layer 5 and the lower flexible substrate 6 with the stress luminescent array 7 as the center, and encapsulate the edges.

[0086] Preferably, the step 2 comprises the following sub-steps:

[0087] Sub-step 21, preparing ink: diluting the alcohol solution of silver nanowires (AgNWs) to 5 mg / mL;

[0088] Sub-step 22, printing the electrode layer: printing ink on the lower flexible substrate 6 by screen printing process;

[0089] Sub-step 23, transferring the lower flexible substrate 6 printed with ink to 60° C. for curing for 5 min, and evaporating the alcohol solution;

[0090] Sub-step 24, repeat sub-steps 22-23 to print 4 layers.

[0091] Preferably, in step 3, the PDMS precursor and the curing agent are mixed in a mass ratio of 10:1, and stirred at 2500 r / min for 8 min in a vacuum defoamer to prepare a PDMS solution.

[0092] Preferably, the step 4 comprises the following sub-steps:

[0093] Sub-step 41, preparing 3D printing ink: mixing the PDMS solution prepared in step 3 with ZnS:Mn 2+ The powder particles were mixed in a mass ratio of 1:2.5 and 5% of nano-SiO 2 Adjust the rheology of the ink and stir until it is completely mixed;

[0094] Sub-step 42, rolling the mixed ink of sub-step 41 for 4 times to eliminate ZnS:Mn 2+ Agglomeration of powder particles followed by collection of ink;

[0095] Sub-step 43, debug the printing parameters, set the dot spacing to 1mm, use a printing needle with an inner diameter of 0.5mm to print a 20×18 cone array, the bottom diameter of a single cone is 0.6mm, and the height is 0.6mm, such as Figure 3 As shown, it was then placed in an oven at 80°C for curing for 1 h.

[0096] The working mechanism of the optical-electrical dual-mode flexible sensor array 13 of the present invention is as follows: Figure 4 , Figure 5 and Figure 6 As shown, when an external object 12 exerts pressure on the optical-electrical dual-mode flexible sensor array 13, the following signals can be received simultaneously: Figure 5 The specific changes are as follows: Figure 6 As shown, when pressure is applied, the stressed part will deform, resulting in a decrease in the distance between the upper and lower plates and an increase in capacitance. By detecting the capacitance value, the magnitude of the pressure can be accurately obtained. In addition, during the deformation of the upper structure, the pressure will be transferred to the stress luminescent array 7. The stress luminescent particles will emit light after being stressed, and the distribution of stress can be clearly observed through the generated stress luminescent area 14.

[0097] After testing, the optical-electrical dual-mode flexible sensor array 13 can well respond to the magnitude of stress and the distribution of applied stress. Figure 7 As shown, when a circular pressure with a diameter of 1 cm is applied to the surface of the optical-electrical dual-mode flexible sensor array 13, it can respond to pressures in the range of 0.21 kPa to 160 kPa. When the pressure is above 60 kPa, the sensitivity of the optical-electrical dual-mode flexible sensor array 13 is 1.212 MPa. -1 In the low stress area (0.21kPa-10kPa, the pressure range that the human body is subjected to in daily life), the sensitivity reaches 21.816MPa -1 In addition, in more than 10,000 pressure cycle tests, the optical-electrical dual-mode flexible sensor array 13 also showed excellent stability ( Figure 8 In addition to circular pressure, when other shapes such as triangles, squares, and pentagons are used to apply pressure to the sensor, not only can the capacitance value respond to the stress magnitude, but the stress luminescence phenomenon also responds to the distribution of stress ( Fig. 9 ).like Fig.10 As shown, the stress distribution response capability of the optical-electrical dual-mode flexible sensor array 13 also has good repeatability and self-recovery ability. After thousands of cycles, it can still provide luminous feedback and can self-recover the luminous performance.

[0098] The above is a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A method for preparing an optical-electrical dual-mode flexible sensor array, characterized in that: The steps include: S1: flexible substrate pretreatment; S2: Printing the conductive material onto the pre-treated flexible substrate through a printing process, and leading out the lead area with a wire, drying, and forming an electrode layer; S3: scraping a flexible polymer material on the electrode layer, and curing it to form a protective layer; S4: The dielectric material prepared by mixing the stress luminescent particles with the flexible polymer material is 3D printed on the protective layer, and is cured to form a dielectric layer; S5: Encapsulate the protective layer on the upper and lower surfaces of the dielectric layer respectively, and encapsulate the edge.

2. The method for preparing a photoelectric dual-mode flexible sensor array according to claim 1, characterized in that: In step S1, the flexible substrate is transparent, and the material is selected from any one of polyvinyl alcohol, polyethylene terephthalate, polyethylene naphthalate, and polyimide; the pretreatment process includes surface treatment using ultraviolet light, ozone, or corona; the printing process includes any one of screen printing, inkjet printing, or coating.

3. The method for preparing a photoelectric dual-mode flexible sensor array according to claim 1, characterized in that: In step S2, the conductive material is translucent or transparent, and is selected from any one of carbon nanomaterials, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate, silver nanowires, indium tin oxide, and zinc aluminum oxide; the lead area is prepared by silver paste dispensing; and the conductor is copper wire.

4. The method for preparing a photoelectric dual-mode flexible sensor array according to claim 1, characterized in that: The flexible polymer material is translucent or transparent and is selected from at least one of polydimethylsiloxane, thermoplastic polyurethane elastomer, and a copolymer of vinylidene fluoride and hexafluoropropylene.

5. The method for preparing a photoelectric dual-mode flexible sensor array according to claim 1, characterized in that: In step S4, the stress luminescent particles are pressure-induced stress luminescent materials, including sulfide systems, sulfur oxide systems, titanate systems, phosphate systems, and silicate systems, and the particle size is 0.1 to 100 μm.

6. The method for preparing a photoelectric dual-mode flexible sensor array according to claim 1, characterized in that: In step S4, the process of preparing the dielectric material also includes adding 5% nano-silicon dioxide; the stress luminescent particles and the flexible polymer material are mixed in a mass ratio of 1:5 to 5:1; and the 3D printing adopts a direct ink writing method.

7. An optical-electrical dual-mode flexible sensor array, characterized in that: include: Dielectric layer, protective layer, electrode layer, flexible substrate; Wherein, the dielectric layer is arranged between the upper protective layer and the lower protective layer; The upper protective layer is disposed on the upper electrode layer; The upper electrode layer is disposed on the upper flexible substrate; An upper flexible substrate, an upper electrode layer, an upper protective layer, a lower protective layer, a lower electrode layer, and a lower flexible substrate are symmetrically arranged in sequence with the dielectric layer as the center; The upper electrode layer and the lower electrode layer lead out the lead area through wires; The dielectric layer includes a stress-luminescent array.

8. The optical-electrical dual-mode flexible sensor array according to claim 7, characterized in that: The stress luminescence array includes N×M conical stress luminescence sensing units.

9. The optical-electrical dual-mode flexible sensor array according to claim 8, characterized in that: The bottom diameter of the stress luminescent sensing unit is 0.1-2 mm, and the height is 0.1-2 mm. The spacing between the stress luminescent sensing units is greater than the bottom diameter of the stress luminescent sensing unit.

10. The optical-electrical dual-mode flexible sensor array according to claim 7, characterized in that: The response pressure of the optical-electrical dual-mode flexible sensor array is 0.21-160 kPa; When the pressure exceeds 60kPa, the sensitivity reaches 1.212MPa -1 ; When the pressure is 0.21~10kPa, the sensitivity reaches 21.816MPa -1 .

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