Super lens wafer, super lens wafer manufacturing process and super lens wafer manufacturing equipment

Abstract

The invention discloses a super lens wafer, a super lens wafer manufacturing process and super lens wafer manufacturing equipment, and belongs to the technical field of optical imaging equipment. The super lens wafer comprises a bearing substrate and a super lens wafer connected and fixed to the bearing substrate, and the manufacturing process comprises the following steps that a preset exposed position of the super lens wafer is etched through reactive ions so that an open groove can be formed in a target oxide layer of the super lens wafer, the slot penetrates through the target oxide layer along a preset direction; according to the method, the target oxide layer is cut in the direction from the open groove to the bearing substrate until the bearing substrate is cut through, the target oxide layer is cut in an etching mode, so that the problems of edge breakage and in-plane cracks caused by mechanical cutting of the target oxide layer can be well avoided, and the product yield of the super lens wafer is effectively improved.

Description

Technical Field

[0001] The present invention relates to the technical field of optical imaging equipment, and in particular to a metalens wafer, a metalens wafer manufacturing process and a manufacturing equipment thereof. Background Art

[0002] The optical lens system used in the existing optical imaging system is generally a traditional lens group, which mainly uses high refractive index dielectric materials such as glass, quartz, etc. Limited by the inherent phase accumulation control mechanism and material properties of the dielectric material, the size and weight of the traditional lens are large, and the spherical aberration caused by the manufacturing process, which then requires a lens group to eliminate the spherical aberration. The volume of the lens group formed in this way is difficult to further reduce. The super lens based on the metasurface can locally change the amplitude, phase, polarization and other characteristics of the incident light beam through the subwavelength microstructure array arranged on the two-dimensional plane, avoiding the spherical aberration caused by the traditional lens, and has the advantages of small size and light weight. Since the manufacturing process of the super lens is compatible with the CMOS process, silicon is generally used to make the subwavelength structure array, and silicon dioxide is used as the substrate material.

[0003] After the metalens wafer is produced, the metasurface is usually transferred to the carrier glass by adhesive bonding, and then mechanically cut into metalens of preset sizes. However, due to the brittleness of the oxide layer material of the metalens wafer, such as the silicon oxide layer, it is easy to have edge collapse and in-plane cracks during the mechanical cutting process due to the brittleness of silicon oxide, which seriously reduces the product yield. Summary of the invention

[0004] The present invention provides a metalens wafer, a metalens wafer manufacturing process and a manufacturing device thereof, aiming to solve the problems of edge collapse and in-plane cracks caused by the brittleness of the oxide layer in the metalens wafer process.

[0005] A first aspect of the present invention provides a process for manufacturing a metalens wafer, wherein the metalens wafer comprises a carrier substrate and a metalens wafer connected and fixed to the carrier substrate, and is characterized in that the process comprises the following steps:

[0006] Etching a preset exposed position of the superlens wafer using reactive ions to form a groove on a target oxide layer of the superlens wafer, wherein the groove penetrates the target oxide layer along a preset direction;

[0007] Cutting is performed along the slot toward the carrier substrate until the carrier substrate is cut through.

[0008] In some embodiments of the first aspect, the target oxide layer is a silicon oxide layer; in the step of etching a preset exposure position of the superlens wafer using reactive ions to form a groove on the target oxide layer of the superlens wafer, the step specifically comprises:

[0009] The preset exposed position of the super lens wafer is etched by using fluorine carbon ions to form a groove on the silicon oxide layer of the super lens wafer.

[0010] In some embodiments of the first aspect, the superlens wafer includes the target oxide layer and the base layer arranged in a stacked manner; the supporting base is connected and fixed to the target oxide layer, and the base layer and the supporting base are respectively located on both side surfaces of the target oxide layer.

[0011] In some embodiments of the first aspect, before the step of etching the preset exposure position of the superlens wafer using reactive ions, the superlens wafer and the supporting substrate are first fixed by bonding glue.

[0012] In some embodiments of the first aspect, the step of etching the preset exposed position of the superlens wafer by using reactive ions to form a groove on the target oxide layer of the superlens wafer is specifically as follows:

[0013] The preset exposure position is formed on the base layer, and the preset exposure position of the base layer is etched so that the groove extends from the base layer to the target oxide layer.

[0014] In some embodiments of the first aspect, before forming the preset exposure position on the base layer, the method further includes the following steps:

[0015] The base layer is thinned.

[0016] In some embodiments of the first aspect, the superlens wafer and the supporting substrate are fixed by bonding glue only after the step of etching the preset exposure position of the superlens wafer by using reactive ions.

[0017] In some embodiments of the first aspect, the step of etching the preset exposed position of the superlens wafer by using reactive ions to form a groove on the target oxide layer of the superlens wafer is specifically as follows:

[0018] The preset exposure position is formed on the target oxide layer, and the preset exposure position of the target oxide layer is etched so that the groove is formed on the target oxide layer.

[0019] In some embodiments of the first aspect, it is characterized in that after the groove is formed and the super lens wafer and the carrier substrate are bonded and fixed, before the carrier substrate is cut along the groove, the following steps are further included:

[0020] The base layer is removed.

[0021] In some embodiments of the first aspect, the method for forming the preset exposure position is specifically:

[0022] A photoresist is coated on the surface of the superlens wafer to form a photoresist layer, and the photoresist layer is subjected to photolithography processing to expose the surface of the superlens wafer to form the preset exposure position.

[0023] A second aspect of the present invention provides a metalens wafer manufacturing device, which applies the metalens wafer manufacturing process described in the first aspect, including:

[0024] A bonding mechanism, used to bond and fix the superlens wafer to the supporting substrate;

[0025] An etching mechanism, used to etch the preset exposure position of the superlens wafer using reactive ions, so as to form a groove on the target oxide layer of the superlens wafer;

[0026] A cutting mechanism, used for cutting the carrier substrate along the slot until the carrier substrate is cut through;

[0027] The computer terminal is used to obtain material information of the metalens wafer, and control the etching parameters of the etching mechanism and the working parameters of the cutting mechanism according to the material information, so as to process the metalens wafer manufacturing.

[0028] A third aspect of the present invention provides a metalens wafer, which is prepared by the metalens wafer manufacturing process described in the first aspect, comprising: the metalens wafer and the carrier substrate;

[0029] The super lens wafer includes a silicon oxide film made by a thermal oxidation process and an outermost silicon oxide layer made by a plasma enhanced chemical vapor deposition process. The outermost silicon oxide layer made by the plasma enhanced chemical vapor deposition process is bonded and fixed to the supporting substrate by bonding adhesive.

[0030] It can be seen from the above technical solutions that the present invention has the following advantages:

[0031] In the first aspect, an embodiment of the present invention provides a metalens wafer manufacturing process, by using reactive ions to etch preset exposure positions of a metalens wafer to form grooves on a target oxide layer of the metalens wafer, wherein the grooves penetrate the upper and lower surfaces of the target oxide layer, and then the carrier substrate is cut along the grooves until the carrier substrate is cut through to complete the cutting of the entire metalens wafer. Since the target oxide layer is divided by etching, the problems of edge collapse and in-plane cracks caused by mechanical cutting of the target oxide layer can be well avoided, thereby effectively improving the product yield of the metalens wafer.

[0032] In the second aspect, an embodiment of the present invention provides a metalens wafer manufacturing device. Since a computer terminal is configured, the computer terminal can identify the material information of the metalens wafer, determine the etching parameters and cutting parameters according to the material information, and then control the bonding mechanism, the etching mechanism and the cutting mechanism to execute the above-mentioned metalens wafer manufacturing process. It can adapt to different metalens wafer materials, realize the etching and segmentation of the target oxide layer, and avoid the problems of edge collapse and in-plane cracks caused by mechanical cutting of the target oxide layer.

[0033] In a third aspect, an embodiment of the present invention provides a metalens wafer manufactured by the above-mentioned device executing the metalens wafer manufacturing process. There will be no edge collapse and in-plane crack problems on the target oxide layer of the metalens wafer, and the performance is better. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0035] Figure 1 A schematic diagram of a process flow of metalens wafer manufacturing process provided in the first embodiment of the present invention;

[0036] Figure 2 A schematic diagram of a metalens wafer manufacturing process provided in Embodiment 1 of the present invention;

[0037] Figure 3 A schematic diagram of a metalens wafer manufacturing process step flow chart provided in Embodiment 2 of the present invention;

[0038] Figure 4 A schematic diagram of a metalens wafer manufacturing process provided in Embodiment 2 of the present invention;

[0039] Figure 5 A schematic diagram of a metalens wafer structure provided in Embodiment 1 of the present invention.

[0040] Reference numerals:

[0041] 1. Metalens wafer; 10. Carrier substrate; 11. Metalens wafer; 110. Target oxide layer; 1100. Outermost silicon oxide layer; 1101. Silicon oxide film; 111. Base layer; 112. Bonding adhesive layer; 113. Photoresist layer; 114. Pattern groove; 115. Grooving. DETAILED DESCRIPTION

[0042] The embodiments of the present invention provide a metalens wafer 1, a metalens wafer process and a manufacturing device thereof, which are intended to solve the problems of edge collapse and in-plane cracks caused by the brittleness of the oxide layer in the metalens wafer 11 process.

[0043] In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described below are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0044] See also Figures 1 to 5 In one embodiment of the present invention, a manufacturing process of a metalens wafer is provided, wherein the metalens wafer 1 includes a carrier substrate 10 and a metalens wafer 11 connected and fixed to the carrier substrate 10, and the manufacturing process includes the following steps:

[0045] Using reactive ions to etch the preset exposed position of the super lens wafer 11, so as to form a groove 115 on the target oxide layer 110 of the super lens wafer 11, wherein the groove 115 penetrates the target oxide layer 110 along a preset direction;

[0046] The cutting is performed along the slot 115 toward the carrier substrate 10 until the carrier substrate 10 is cut through.

[0047] In the present embodiment, reactive ions are used to etch the preset exposed positions of the metalens wafer 11, so that grooves 115 are formed on the target oxide layer 110 of the metalens wafer 11. Since the target oxide layer 110 is selectively divided by etching, the edge collapse and in-plane crack problems caused by mechanical cutting of the target oxide layer 110 can be well avoided. Subsequently, the carrier substrate 10 is cut along the grooves 115 until the carrier substrate 10 is cut through, thereby completing the cutting of the entire metalens wafer 1. Therefore, the solution provided in the present embodiment can effectively reduce the edge collapse and in-plane crack problems of the target oxide layer 110 of the metalens wafer 11 during division, and effectively improve the product yield of the metalens wafer 1.

[0048] The method for forming the preset exposure position of the lens wafer 11 may be to form an exposure pattern on the super lens wafer 11 by a photoresist process, and the position exposed on the super lens wafer 11 is the preset exposure position.

[0049] In addition, the preset direction of the slot 115 may be the up-down direction, or may be other required slot directions. As long as the direction of penetrating the target oxide layer 110 is satisfied, any person skilled in the art may make a selection.

[0050] Based on the above examples, the technical solution provided in this embodiment includes at least two steps. The target oxide layer 110 of the metalens wafer 11 with high brittleness is first processed by etching, and then the supporting substrate 10 is cut along the groove 115 by a suitable cutting method until the supporting substrate 10 is cut through. This avoids the problem of easy edge collapse and in-plane cracks in the overall metalens wafer 1 due to the high brittleness of the target oxide layer 110 during mechanical cutting, thereby effectively improving the product yield of the metalens wafer 1.

[0051] Embodiment 1

[0052] See also Figure 1 to Figure 2 When the first embodiment of the present invention adopts the above-mentioned metalens wafer process to manufacture the metalens wafer 1, the following steps are specifically included:

[0053] S1, providing a metalens wafer 1, such as Figure 2 (a) to Figure 2 As shown in (c), the metalens wafer 1 includes a supporting substrate 10 and a metalens wafer 11 , and the metalens wafer 11 is connected and fixed to the supporting substrate 10 .

[0054] like Figure 2 As shown in (a), the superlens wafer 11 includes a target oxide layer 110 and a base layer 111 which are stacked, wherein the target oxide layer 110 is a silicon oxide layer or a titanium oxide layer, the base layer 111 is a silicon base layer, and the supporting base 10 is a supporting glass; the supporting base 10 is connected and fixed to the target oxide layer 110, and after being fixed, the supporting base 10 and the base layer 111 are respectively located on both side surfaces of the target oxide layer 110 to form an integrated stacked body for subsequent etching and cutting, and then the fixed stacked body is fixed on a workbench and subsequent process steps are performed.

[0055] Specifically, the super lens wafer 11 is connected to the carrier substrate 10 by bonding, that is, the carrier substrate 10 is connected and fixed to the target oxide layer 110 by vacuum adhesive bonding technology. Figure 2As shown in (b), a bonding adhesive / laminating bonding adhesive dry film is first coated on the target oxide layer 110 of the super lens wafer 11, and then the carrier substrate 10 is aligned and placed on the target oxide layer 110 of the super lens wafer 11, and then vacuum is evacuated, and the wafer is hot pressed in a vacuum environment to promote the flow and bonding of the adhesive, so as to achieve the bonding and fixing of the super lens wafer 11 and the carrier substrate 10. The fixed super lens wafer 11 and the carrier substrate 10 are as shown in FIG. Figure 2 (c) shown.

[0056] It should be understood that the bonding adhesive layer 112 is made of a highly light-transmitting material and needs to meet a light transmittance requirement of > 99.6%.

[0057] In order to prevent the contaminants on the wafer surface from affecting the cutting and separation process of the metalens wafer 1, before performing step S1, the surface of the metalens wafer 11 needs to be cleaned. After the cleaned metalens wafer 11 is connected to the supporting substrate 10, the deviation of the separation position due to contaminants can be avoided, and the problem of cracks caused by surface contaminants can be avoided, thereby improving the yield of the metalens wafer 1.

[0058] It should be noted that the specific cleaning method includes but is not limited to cleaning with a cleaning liquid or cleaning with a gas, and those skilled in the art may choose the cleaning method according to actual needs.

[0059] S2, using reactive ions to etch the preset exposed position of the superlens wafer 11, selectively forming a groove 115 on the target oxide layer 110 of the superlens wafer 11, wherein the groove 115 penetrates the target oxide layer from top to bottom, that is, the groove 115 divides the target oxide layer 110 into multiple isolated units.

[0060] For specific implementation, please refer to Figure 2 (d) to Figure 2 (h), step S2 specifically comprises the following steps:

[0061] S20, such as Figure 2 (e) forming a preset exposure position on the base layer 111. Specifically, a photoresist is coated on the surface of the base layer 111 to form a photoresist layer 113. Then, a pattern groove 114 is made on the photoresist layer 113 by a photolithography process. The pattern groove 114 exposes the surface of the base layer 111. The exposed position is the preset exposure position of the base layer 111. During subsequent etching, the etching material can etch the exposed preset exposure position.

[0062] In order to reduce the problem that the subsequent internal stress cannot be released in time, before forming the preset exposure position on the base layer 111 in step S20, the following steps are also included: Figure 2(d) Flip the entire stack so that the base layer 111 is on top and the supporting base 10 is on the bottom. Then, the base layer 111 is thinned. The thinned base layer 111 can avoid the existence of stress and reduce the problem of subsequent internal stress not being able to be released in time. At the same time, it can also save etching materials.

[0063] Specifically, the base layer 111 is thinned to 10-50 μm, and the specific thinning methods include but are not limited to mechanical grinding thinning or chemical dissolution thinning. As long as the thinning method can thin the base layer 111 to 10-50 μm, technicians in this field can choose it according to actual needs.

[0064] S21, such as Figure 2 (f) and Figure 2 As shown in (g), the preset exposed position of the metalens wafer 11 is etched by reactive ions, that is, the reactive ions react at the exposed preset exposed position, thereby etching a groove 115, and the groove 115 will sequentially penetrate the base layer 111 and the target oxide layer 110. The process can be seen in Figure 2 (f) to Figure 2 (g) such that the groove 115 extends from the base layer 111 to the target oxide layer 110 .

[0065] In a specific embodiment, the target oxide layer 110 is a silicon oxide layer. More specifically, the silicon oxide layer includes a silicon oxide film 1101 made by a thermal oxidation process, and an outermost silicon oxide 1100 made by a plasma enhanced chemical vapor deposition process. The silicon oxide layers made by the thermal oxidation process and the PECVD process are very brittle, and direct mechanical cutting is prone to edge collapse and in-plane cracking problems. In order to solve this problem, fluorine carbon ions are used to etch the preset exposed positions of the super lens wafer 11. During the plasma etching process, the fluorine carbon ions can be ionized to generate active fluorine atoms. These fluorine atoms can react with the silicon oxide layer to generate gaseous silicon fluoride (SiF4) and other products, thereby achieving etching, so that the outermost silicon oxide 1100 and the silicon oxide film 1101 of the super lens wafer 11 are grooved, that is, grooves 115 are formed in the silicon oxide layer, thereby dividing the silicon oxide layer into isolated units.

[0066] In other embodiments, the target oxide layer 110 is a titanium oxide layer, and fluorine carbon ions are used to etch the preset exposure positions of the superlens wafer 11. During the plasma etching process, the fluorine carbon ions can be ionized to generate volatile titanium fluoride, such as TiF4, so as to achieve etching, so that the titanium oxide layer of the superlens wafer 11 forms grooves 115, thereby dividing the titanium oxide layer into isolated units.

[0067] It should be noted that the specific types of gases containing fluorocarbon ions include: carbon tetrafluoride (CF4), octafluoropropane (CH3CH2CH2F8), trifluoromethane (CHF3), etc., among which CF4 and CHF3 are commonly used; CF4 has a high etching rate but a poor selectivity for polysilicon, CHF3 has a high polymer production rate, and fluorocarbon ions in a non-plasma state have high chemical stability, and their chemical bonds are stronger than those of SiF, and will not react with silicon or silicon oxides. Generally, in fluorocarbon ion gas, the higher the proportion of carbon atoms, the more polymers are formed, which will result in a high etching selectivity, but the etching rate will also be lower; therefore, in some etching systems, fluorine atoms are added by adding a silicon source (silicon tetrafluoride) to change the fluorine-carbon atomic ratio.

[0068] S22, such as Figure 2 As shown in (g), the remaining photoresist layer 113 is removed by a wet process, that is, the chip is immersed in a specific chemical liquid to soften and peel off the photoresist, and finally the photoresist is peeled off from the surface of the wafer and removed. The types of chemical liquids include but are not limited to acetone, cyclopentanone and positive degumming liquid. The specific type and amount can be selected according to the type and thickness of the photoresist and the actual application requirements.

[0069] It can be seen from the embodiment of the above step S2 that the target oxide layer 110 of one embodiment is a silicon oxide layer, and the target oxide layer 110 of another embodiment is a titanium oxide layer, both of which are common target oxide layers 110 of the superlens wafer 11. After adopting this method, the target oxide layer 110 can be divided into multiple layers by etching, avoiding the situation that the target oxide layer 110 is brittle and prone to edge collapse and internal cracks due to mechanical cutting.

[0070] S3, such as Figure 2 (i) Cutting is performed along the groove 115 toward the carrier substrate 10 until the carrier substrate 10 is cut through to obtain a plurality of metalenses of a preset size. After adopting step S3, all structures except the target oxide layer 110 can be cut and separated, and the target oxide layer 110 which is prone to edge collapse and in-plane cracks is avoided during the mechanical cutting process.

[0071] It should be noted that mechanical cutting methods include but are not limited to blade cutting or laser cutting. When blade cutting is used, a soft knife is required to cut the remaining bonding glue and glass. The specifications of the soft knife are determined by the etching opening and the cutting offset. When laser cutting is used, laser cutting includes invisible cutting or laser burning. It is necessary to select the appropriate laser spot size according to the etching opening, and select the appropriate laser pulse and laser parameters according to the thickness of the bonding glue and glass.

[0072] In order to improve the stability and effect of cutting, before cutting, the following steps are also included: removing the base layer 111, such as Figure 2 (h) Since the superlens wafer 11 includes a target oxide layer 110 and a base layer 111, the base layer 111 has been initially thinned during the etching process, and then the entire base layer 111 is removed to expose the superlens wafer 11 and the supporting base 10. Since the superlens wafer 11 has been etched and separated, the subsequent cutting only needs to cut the supporting base 10 alone, avoiding cutting of multiple materials with different hardnesses at the same time, which can effectively prevent the occurrence of edge collapse and cracks, improve the stability and effect of cutting, thereby improving the quality of the product and greatly improving the yield of the product.

[0073] It should be noted that the methods for removing the base layer 111 include but are not limited to mechanical methods such as grinding, or chemical dissolution and thinning, and those skilled in the art can choose according to their actual needs.

[0074] It can be seen from the above embodiment 1 that the metalens wafer process proposed in embodiment 1 first connects and fixes the metalens wafer 11 to the carrier substrate 10, and then etches the preset exposure position of the metalens wafer 11 to form a groove 115 on the silicon oxide layer of the metalens wafer 11, and then cuts along the groove 115 toward the carrier substrate 10 until the carrier substrate 10 is cut through; when cutting the silicon oxide layer, the present invention uses an etching method instead of a cutting method, thereby avoiding the problem of edge collapse and in-plane cracks that are easy to occur during mechanical cutting due to the high brittleness of silicon oxide.

[0075] In some other embodiments, a metalens wafer process proposed in the present invention can also be used for segmenting a target oxide layer 110 of other structures, wherein the target oxide layer 110 can be a titanium oxide layer, and a groove 115 is formed on the titanium oxide layer by an etching method, and then cut, so as to realize a metalens wafer. Accordingly, the problem of edge collapse and in-plane cracks caused by the high brittleness of titanium oxide during mechanical cutting is avoided.

[0076] Based on the above metalens wafer process, the present invention also proposes a metalens wafer device for preparing a metalens wafer 1.

[0077] The present invention provides a metalens wafer device, comprising:

[0078] A bonding mechanism, used to bond and fix the superlens wafer 11 to the carrier substrate 10;

[0079] An etching mechanism, used to etch a preset exposed position of the superlens wafer 11 so as to form a groove 115 on the target oxide layer 110 of the superlens wafer 11;

[0080] A cutting mechanism, used for cutting the carrier substrate 10 along the slot 115 until the carrier substrate 10 is cut through;

[0081] The computer terminal is used to obtain material information of the metalens wafer 1, and control the etching parameters of the etching mechanism and the working parameters of the cutting mechanism according to the material information to process the metalens wafer.

[0082] The above-mentioned bonding mechanism, etching mechanism and cutting mechanism are all controlled by a computer terminal. The computer terminal can determine the corresponding bonding path, etching parameters and cutting parameters according to different materials. Then, the computer terminal determines the type and parameters of cutting according to the material information, and controls the bonding mechanism, etching mechanism and cutting mechanism to execute the above-mentioned process steps, thereby realizing the intelligence and automation of the metalens wafer process.

[0083] When facing different metalens wafers, the computer terminal first determines the type of the target oxide layer 110, such as a silicon oxide layer or a titanium oxide layer, and determines the materials and parameters required for etching; then the computer terminal determines the type of the supporting substrate, the parameters of mechanical cutting, and the bonding path and bonding size parameters, and then the computer terminal controls the bonding mechanism, the etching mechanism, and the cutting mechanism to perform the above process steps in sequence to complete the cutting of different metalens wafers.

[0084] Based on the above metalens wafer process and manufacturing equipment, the present invention also proposes a metalens wafer 1, which is prepared by the above metalens wafer process.

[0085] Please refer to Figure 5 , the present invention provides a metalens wafer 1, comprising: a metalens wafer 11 and a carrying substrate 10;

[0086] The superlens wafer includes a silicon oxide film 1101 made by a thermal oxidation process and an outermost silicon oxide 1100 made by a plasma enhanced chemical vapor deposition process. The outermost silicon oxide 1100 made by the plasma enhanced chemical vapor deposition process is fixed to the carrier substrate 10 by bonding adhesive.

[0087] After being prepared by the above-mentioned metalens wafer process, the cut surface of the metalens wafer 1 is neat, especially there will be no edge collapse and in-plane crack problems on the target oxide layer 110 (silicon oxide layer or titanium oxide layer), and the performance is better.

[0088] Embodiment 2

[0089] See also Figure 3 to Figure 4The second embodiment of the present invention adopts the above-mentioned metalens wafer process to manufacture the metalens wafer 1. The basic principle is basically the same as that of the first embodiment. In both embodiments, a through groove 115 is first etched on the target oxide layer 110, and then a cutting is performed along the groove 115 toward the carrier substrate 10 until the carrier substrate 10 is cut through. The difference is that the order of connecting and fixing the carrier substrate 10 and the metalens wafer 11 is different. In the first embodiment, the carrier substrate 10 and the metalens wafer 11 are first fixed and then the etching and cutting process is performed. In the second embodiment, the etching process is performed first, and then the carrier substrate 10 and the metalens wafer 11 are fixed, and finally the etching is performed.

[0090] Embodiment 2 specifically includes the following steps:

[0091] S1, such as Figure 4 (a) providing a metalens wafer 1, the metalens wafer 1 comprising a carrier substrate 10 and a metalens wafer 11, that is, in this embodiment, the carrier substrate 10 and the metalens wafer 11 have not been connected and fixed, so only Figure 4 (a) schematically shows a superlens wafer 11.

[0092] S2, such as Figure 4 (b) to Figure 4 As shown in (d), the preset exposed position of the super lens wafer 11 is etched by reactive ions to form a groove 115 on the target oxide layer 110 of the super lens wafer 11, wherein the groove 115 penetrates the upper surface and the lower surface of the target oxide layer 110.

[0093] Preferably, step S2 specifically includes the following steps:

[0094] S20, such as Figure 4 (b) forming a preset exposure position on the target oxide layer 110. Specifically, a photoresist layer 113 is coated on the surface of the target oxide layer 110, and then a pattern groove 114 is made by a photolithography process. The pattern groove 114 exposes the surface of the target oxide layer 110. The exposed position is the preset exposure position of the target oxide layer 110. It can be seen that the difference between the second embodiment and the first embodiment is that the location where the preset exposure position is formed is changed from the base layer 111 of the first embodiment to the target oxide layer 110. At the same time, there is no need to perform additional thinning on the oxide layer, and there are fewer steps.

[0095] S21, such as Figure 4 (c) Using reactive ions to etch the preset exposed positions of the metalens wafer 11, that is, the reactive ions react at the exposed preset exposed positions, thereby etching the grooves 115 until the grooves 115 penetrate the target oxide layer 110. It can be seen that the grooves 115 of the second embodiment do not need to extend to the base layer 111, and less etching material is used.

[0096] S22, such as Figure 4 (d) Using a wet process to remove the remaining photoresist, that is, immersing the chip in a specific chemical liquid to soften and peel off the photoresist, and finally peeling off the photoresist from the wafer surface. The types of chemical liquids include but are not limited to acetone, cyclopentanone and positive stripping liquid. The specific type and amount can be selected according to the type and thickness of the photoresist and the actual application requirements.

[0097] S3, such as Figure 4 (e) and Figure 4 (f) Connect and fix the super lens wafer 11 to the carrier substrate 10. Specifically, the method of fixing the super lens wafer 11 to the carrier substrate 10 by bonding is the same as that in the first embodiment, and will not be described in detail herein.

[0098] S4, Figure 4 (h) Cutting is performed along the slot 115 toward the supporting substrate 10 until the supporting substrate 10 is cut through to obtain a plurality of metalenses of a preset size. Specifically, the cutting method is the same as that in the first embodiment and will not be described in detail herein.

[0099] In order to improve the stability and effect of cutting, before cutting, the following steps are also included: removing the base layer 111, such as Figure 4 (g) Specifically, the removal method and effect are the same as those in the first embodiment, and will not be described in detail here.

[0100] It can be seen from the above embodiment 2 that a metalens wafer process proposed in embodiment 2 uses reactive ions to first etch the preset exposure position of the metalens wafer 11 to form a groove 115 on the target oxide layer 110 of the metalens wafer 11, and then the metalens wafer 11 is connected and fixed to the supporting substrate 10, and finally cut along the groove 115 toward the supporting substrate 10 until the supporting substrate 10 is cut through; when cutting the target oxide layer 110, the present invention uses an etching method to replace the cutting method, thereby avoiding the problem of edge collapse and in-plane cracks that are easy to occur during mechanical cutting due to the high brittleness of the target oxide layer 110.

[0101] It can be seen that the biggest difference between Example 2 and Example 1 is that the order of bonding and etching is different. Example 1 is first bonded and then etched. Since each step of segmenting the metalens wafer 1 is performed after bonding, the integrity of the metalens wafer 1 is better. In Example 2, etching is performed first and then bonded. Since the metalens wafer 11 is processed first, if defective products are encountered, they can be removed, which has better flexibility. In addition, compared with Example 1, the thinning process and etching materials are reduced, the cost is lower, and at the same time, the technical prejudice of bonding first and then segmenting is eliminated.

[0102] The similarities between the two are that a groove 115 is first formed on the target oxide layer 110 of the superlens wafer 11, and then cutting is performed along the groove 115 toward the supporting substrate 10 until the supporting substrate 10 is cut through. Accordingly, both the first embodiment and the second embodiment can solve the problem of edge collapse and in-plane cracks caused by mechanical cutting due to the brittleness of the oxide layer material.

[0103] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A process for manufacturing a metalens wafer, wherein the metalens wafer comprises a carrier substrate and a metalens wafer connected and fixed to the carrier substrate, characterized in that: The following steps are involved: Etching a preset exposed position of the superlens wafer using reactive ions to form a groove on a target oxide layer of the superlens wafer, wherein the groove penetrates the target oxide layer along a preset direction; Cutting is performed along the slot toward the carrier substrate until the carrier substrate is cut through.

2. A metalens wafer manufacturing process according to claim 1, characterized in that: The target oxide layer is a silicon oxide layer; the preset exposure position of the super lens wafer is etched by using reactive ions to form a groove on the target oxide layer of the super lens wafer. In this step, specifically: The preset exposed position of the super lens wafer is etched by using fluorine carbon ions to form a groove on the silicon oxide layer of the super lens wafer.

3. A metalens wafer manufacturing process according to claim 1, characterized in that: The super lens wafer includes the target oxide layer and the base layer which are stacked; the supporting base is connected and fixed to the target oxide layer, and the base layer and the supporting base are respectively located on two side surfaces of the target oxide layer.

4. A metalens wafer manufacturing process according to claim 3, characterized in that: Before the step of etching the preset exposed position of the super lens wafer by using reactive ions, the super lens wafer and the supporting substrate are first fixed by bonding glue.

5. A metalens wafer manufacturing process according to claim 4, characterized in that: The step of etching the preset exposed position of the super lens wafer by using reactive ions to form a groove on the target oxide layer of the super lens wafer is specifically as follows: The preset exposure position is formed on the base layer, and the preset exposure position of the base layer is etched so that the groove extends from the base layer to the target oxide layer.

6. A metalens wafer manufacturing process according to claim 5, characterized in that: Before forming the preset exposure position on the base layer, the method further includes the following steps: The base layer is thinned.

7. A metalens wafer manufacturing process according to claim 3, characterized in that: After the step of etching the preset exposed position of the super lens wafer by using reactive ions, the super lens wafer and the supporting substrate are fixed by bonding glue.

8. A metalens wafer manufacturing process according to claim 7, characterized in that: The step of etching the preset exposed position of the super lens wafer by using reactive ions to form a groove on the target oxide layer of the super lens wafer is specifically as follows: The preset exposure position is formed on the target oxide layer, and the preset exposure position of the target oxide layer is etched so that the groove is formed on the target oxide layer.

9. A metalens wafer manufacturing process according to any one of claims 5 or 8, characterized in that: After the grooves are formed and the super lens wafer and the carrier substrate are bonded and fixed, and before the carrier substrate is cut along the grooves, the following steps are also included: The base layer is removed.

10. A metalens wafer manufacturing process according to claim 1, characterized in that: The method for forming the preset exposure position is specifically as follows: A photoresist is coated on the surface of the superlens wafer to form a photoresist layer, and the photoresist layer is subjected to photolithography processing to expose the surface of the superlens wafer to form the preset exposure position.

11. A metalens wafer manufacturing device, characterized in that: The metalens wafer manufacturing process according to any one of claims 1 to 10 is applied, comprising: A bonding mechanism, used to bond and fix the superlens wafer to the supporting substrate; An etching mechanism, used to etch the preset exposure position of the superlens wafer using reactive ions, so as to form a groove on the target oxide layer of the superlens wafer; A cutting mechanism, used for cutting the carrier substrate along the slot until the carrier substrate is cut through; The computer terminal is used to obtain material information of the metalens wafer, and control the etching parameters of the etching mechanism and the working parameters of the cutting mechanism according to the material information, so as to process the metalens wafer manufacturing.

12. A metalens wafer, characterized in that: Prepared by the metalens wafer manufacturing process according to any one of claims 1 to 10, comprising: a metalens wafer and a supporting substrate; The super lens wafer includes a silicon oxide film made by a thermal oxidation process and an outermost silicon oxide layer made by a plasma enhanced chemical vapor deposition process. The outermost silicon oxide layer made by the plasma enhanced chemical vapor deposition process is bonded and fixed to the supporting substrate by bonding adhesive.

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