Display panel

Abstract

The present invention provides a display panel comprising a thin-film transistor layer, a common electrode layer, and an in-plane common electrode signal line. The common electrode layer is connected to the in-plane common electrode signal line via a common electrode terminal on a first side of the thin-film transistor layer. An electrode opening and a conductive layer structure are provided on a second side of the thin-film transistor layer. Conductors are filled in the electrode openings, and the conductors are respectively connected to the conductive layer structure and the common electrode layer. The conductive layer structure is also connected to the in-plane common electrode signal line. By connecting the in-plane common electrode signal line to the common electrode layer via the common electrode terminal on the first side of the thin-film transistor layer, and providing an electrode opening and a conductive layer structure on the second side of the thin-film transistor layer to connect the in-plane common electrode signal line to the common electrode layer, common electrode signal input can be achieved on both sides of the thin-film transistor layer, thereby eliminating differences in the common electrode signal recovery capability and avoiding crosstalk or display unevenness.

Description

Technical Field

[0001] The present invention relates to the field of display, and in particular to a display panel. Background Art

[0002] In the prior art, an entire surface of ITO (Indium tin oxide) conductive glass is provided in the AA area of ​​a display panel to provide a common electrode signal COM. The common electrode signal line within the surface is connected to the ITO through the COF (Chip OnFlex) of the thin-film transistor TFT layer to access the COM signal. However, the COF is only provided on one side of the TFT layer. Due to the influence of the in-plane coupling capacitance and other factors, there is a difference in the COM signal recovery ability when the COM signal is transmitted from one side of the COF to the other side, thereby causing crosstalk and display unevenness. Summary of the Invention

[0003] The main purpose of the present invention is to provide a display panel, aiming to solve the problem of differences in COM signal recovery capabilities in the prior art.

[0004] To achieve the above-mentioned objectives, the present invention provides a display panel, which includes a thin film transistor layer, a common electrode layer and an in-plane common electrode signal line; the first side of the thin film transistor layer connects the common electrode layer to the in-plane common electrode signal line through the common electrode terminal; the second side of the thin film transistor layer is provided with an electrode opening and a conductive layer structure, wherein the second side is arranged opposite to the first side; the electrode opening is filled with a conductor, and the conductor is respectively connected to the conductive layer structure and the common electrode layer; the conductive layer structure is also connected to the in-plane common electrode signal line.

[0005] Optionally, the display panel further includes a filter layer and a sealant; wherein:

[0006] The filter layer and the thin film transistor layer are arranged opposite to each other, and the sealant is arranged between the side of the filter layer and the side of the thin film transistor layer;

[0007] A colloid through-hole is provided in the sealant in an area opposite to the electrode opening. The conductor is filled in the colloid through-hole and overflows through the electrode opening to connect with the common electrode layer.

[0008] Optionally, the filter layer includes an organic planar layer;

[0009] A light shielding layer provided on the organic flat surface;

[0010] a first substrate disposed on the light shielding layer;

[0011] A polarizing layer is provided on the first substrate.

[0012] Optionally, it is characterized in that the thin film transistor layer includes a second substrate, the conductive layer structure is provided on the second substrate, and the electrode opening is provided on the second substrate;

[0013] The conductive layer structure includes a first metal layer provided on the second substrate, the first metal layer being connected to the in-plane common electrode signal line;

[0014] a second metal layer disposed on the first metal layer;

[0015] A first conductive glass layer is disposed on the second metal layer, wherein the first conductive glass layer is in contact with the conductor.

[0016] Optionally, the thin film transistor layer further includes an organic film layer provided on the second metal layer;

[0017] The organic film layer is provided with a first opening opposite to the electrode opening, and the side of the first opening facing the electrode opening is sloped, and the first conductive glass layer covers the side of the organic film layer from above the organic film layer and extends to the second substrate;

[0018] A second opening is provided on the organic film layer, and the first conductive glass layer contacts the second metal layer through the second opening.

[0019] Optionally, the conductive layer structure further includes a second insulating layer disposed between the first conductive glass layer and the organic film layer; the second insulating layer is provided with a third opening opposite to the electrode opening, and the third opening has a smaller aperture than the first opening; the second insulating layer is disconnected at a side edge of the organic film layer, and the first conductive glass layer forms a groove between the second insulating layer and the side edge of the organic film layer;

[0020] The second insulating layer opens at the second opening of the organic film layer.

[0021] Optionally, the conductive layer structure further includes a second conductive glass layer disposed between the second insulating layer and the organic film layer;

[0022] The second conductive glass layer covers the side of the organic film layer from above the organic film layer;

[0023] Between the first opening and the second opening of the organic film layer, a fourth opening is provided in the contact section of the first conductive glass layer with the sealant, and the second insulating layer contacts the sealant through the fourth opening;

[0024] The second insulating layer is provided with a fifth opening between the fourth opening and the second opening;

[0025] The first conductive glass layer contacts the second conductive glass layer through the fifth opening.

[0026] Optionally, the conductive layer structure further includes a gate insulating layer disposed between the first metal layer and the second metal layer; wherein:

[0027] The gate insulating layer is provided with a sixth opening at a position where the gate insulating layer contacts the first metal layer and the second metal layer at the same time, and the first metal layer contacts the second metal layer through the sixth opening.

[0028] Optionally, the conductive layer structure further includes a first insulating layer disposed above the gate insulating layer and the second metal layer and below the organic film layer; the first insulating layer opens at the second opening of the organic film layer.

[0029] Optionally, the conductor is conductive silver paste.

[0030] The present invention provides a display panel comprising a thin film transistor layer, a common electrode layer, and an in-plane common electrode signal line; a first side of the thin film transistor layer connects the common electrode layer to the in-plane common electrode signal line via a common electrode terminal; an electrode opening and a conductive layer structure are provided on a second side of the thin film transistor layer, wherein the second side is arranged opposite to the first side; a conductor is filled in the electrode opening, and the conductor is respectively connected to the conductive layer structure and the common electrode layer; and the conductive layer structure is also connected to the in-plane common electrode signal line. By connecting the in-plane common electrode signal line to the common electrode layer via the common electrode terminal on the first side of the thin film transistor layer, and providing the electrode opening and the conductive layer structure on the second side of the thin film transistor layer to connect the in-plane common electrode signal line to the common electrode layer, the common electrode signal can be input on both sides of the thin film transistor layer, thereby eliminating differences in the common electrode signal recovery capability and avoiding crosstalk or display unevenness. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0032] Figure 1 is a schematic structural diagram of an embodiment of a display panel of the present invention;

[0033] Figure 2It is a structural diagram of a display panel in the prior art;

[0034] Figure 3 The display panel of the present invention is Figure 1 A-A' cross-sectional view;

[0035] Figure 4 This is a front structural diagram of the display panel of the present invention at the electrode opening position;

[0036] Figure 5 Schematic diagram of the preparation process of the thin film transistor layer in the display panel of the present invention.

[0037] The purpose, features and advantages of the present invention will be further described with reference to the accompanying drawings and in conjunction with the embodiments.

[0038] Description of Figure Numbers:

[0039] Label name Label name 100 Thin-film transistor layer 200 Common electrode layer 110 Electrode opening COM1 In-plane common electrode signal line 120 Common electrode terminal B1 first substrate B2 Second substrate Seal sealant DETAILED DESCRIPTION

[0040] It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0041] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0042] It should be noted that all directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the various components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0043] In addition, the descriptions of "first", "second", etc. in the present invention are for descriptive purposes only and should not be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" or "second" may explicitly or implicitly include at least one of such features. In addition, the technical solutions between the various embodiments can be combined with each other, but this must be based on the fact that they can be implemented by ordinary technicians in this field. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0044] The present invention provides a display panel, see Figure 1 , Figure 1 This is a functional block diagram of an embodiment of a display panel according to the present invention. In this embodiment, the display panel includes a thin-film transistor layer 100, a common electrode layer 200, and an in-plane common electrode signal line COM1. A first side of the thin-film transistor layer 100 connects the common electrode layer 200 to the in-plane common electrode signal line COM1 via a common electrode terminal 120. An electrode opening 110 and a conductive layer structure are provided on a second side of the thin-film transistor layer 100, wherein the second side is opposite to the first side. A conductor is filled in the electrode opening 110, which is connected to the conductive layer structure and the common electrode layer 200, respectively. The conductive layer structure is also connected to the in-plane common electrode signal line COM1.

[0045] First, see Figure 2 , Figure 2 Schematic diagram of the TFT layer in the prior art; in the prior art, one side of the TFT layer, i.e. Figure 2 In the example, a signal transmission device such as a COF or an FPC (Flexible Printed Circuit) is provided on the lower side; the common electrode signal line within the plane is connected to one end of the COF through the common electrode terminal D provided on the lower side of the TFT layer, and the other end of the COF is connected to the common electrode signal line outside the plane, thereby realizing the transmission of the common electrode signal outside the plane to the common electrode signal line within the plane; it can be understood that since only the common electrode terminal D located on the lower side of the TFT layer serves as the input of the common electrode signal, all common electrode signals within the plane are output by the common electrode terminal D, while for areas farther away from the common electrode terminal D, such as the upper side of the TFT layer, due to the presence of coupling capacitance in the circuit, the common electrode signal will suffer greater loss when being transmitted to the upper side of the TFT layer, thereby making the common electrode signal within the plane uneven, resulting in uneven display, such as crosstalk problems; especially for display panels in the FFS (Fringe Field Switch) mode, its coupling capacitance is larger than that of other display modes, so the greater the unevenness of the common electrode signal, the greater the unevenness.

[0046] In this embodiment, a common electrode terminal 120 is provided on the first side of the TFT layer, and the in-plane common electrode signal line COM1 is connected to the common electrode layer 200 through the common electrode terminal 120; the specific setting of the first side of the TFT layer can be selected based on actual needs; and the common electrode signal is input from the first side.

[0047] It can be understood that the common electrode layer 200 is a layer for providing common electrode signals. Specifically, the common electrode signals can be introduced from the common electrode layer 200 into corresponding wirings for transmission.

[0048] In this embodiment, in addition to setting a common electrode signal input on the first side of the TFT layer, a common electrode signal input is also set on the second side of the TFT layer. It can be understood that the first side of the TFT layer is opposite to the second side, and the common electrode signal is input from two opposite sides of the TFT layer, thereby eliminating or weakening the influence of the coupling capacitance.

[0049] Specifically, an electrode opening 110 is made on the second side of the TFT layer, and the common electrode layer 200 provides a common electrode signal at the position corresponding to the electrode opening 110. The specific way of providing the common electrode signal can be to set relevant signal lines or electrode points. Therefore, after the electrode opening 110 is made on the TFT layer, it can contact the common electrode layer 200 below the TFT layer through the electrode opening 110; at the same time, a conductor is filled in the electrode opening 110 so that the conductor can contact the common electrode layer 200; and a conductive layer structure is set between the conductor and the in-plane common electrode signal line COM1, so that the common electrode signal provided by the common electrode layer 200 can pass through the conductor and the conductive layer structure in sequence to reach the in-plane common electrode signal line COM1, thereby realizing the input of the common electrode signal on the second side of the TFT layer.

[0050] The specific material of the conductor can be selected based on actual needs, such as conductive silver paste Ag.

[0051] It should be noted that the number of electrode openings 110 can be one or more, and can be set based on actual needs; for each electrode opening 110, a corresponding conductive layer structure and a filling conductor are set respectively, so as to realize the input of common electrode signals at multiple points on the second side of the TFT layer; the specific opening method of the electrode opening 110 can be set based on actual needs, such as glass through-hole technology.

[0052] In this embodiment, the in-plane common electrode signal line COM1 is connected to the common electrode layer 200 through the common electrode terminal 120 on the first side of the thin film transistor layer 100, and the electrode opening 110 and the conductive layer structure are provided on the second side of the thin film transistor layer 100 to connect the in-plane common electrode signal line COM1 to the common electrode layer 200, so that the input of the common electrode signal can be realized on both sides of the thin film transistor layer 100, thereby eliminating the difference in the recovery ability of the common electrode signal and avoiding problems such as crosstalk or display unevenness.

[0053] Further, see Figure 1 、 Figure 3 、 Figure 4 The display panel further includes a filter layer and a sealant Seal; wherein:

[0054] The filter layer and the thin film transistor layer 100 are arranged opposite to each other, and the sealant Seal is arranged between the side of the filter layer and the side of the thin film transistor layer 100;

[0055] A colloid through-hole is provided in the sealant Seal in an area opposite to the electrode opening 110 , and the conductor is filled in the colloid through-hole and overflows through the electrode opening 110 to connect with the common electrode layer 200 .

[0056] The filter layer is a CF (Color Filter) layer; after the TFT layer and the CF layer are prepared separately, they are bonded together by sealant Seal. It can be understood that the sealant Seal is not light-transmissive. Therefore, in order to avoid affecting the pixel display in the surface, the sealant Seal is set on the side of the filter layer and the thin film transistor layer 100; that is, a structure of TFT layer, sealant Seal, and CF layer is formed from bottom to top; and in order to realize the input of the common electrode signal on the second side of the TFT layer, it is necessary to make an electrode opening 110 on the TFT layer and fill it with conductive silver paste Ag to establish a connection with the common electrode layer 200; after the electrode opening 110 is made in the TFT layer, the conductive silver paste Ag is filled. In order to ensure that the conductive silver paste Ag can contact the common electrode layer 200, when filling the conductive silver paste Ag, the conductive silver paste Ag needs to be filled to overflow, and the platform formed by the overflow part is used to contact the common electrode layer 200. It should be noted that the conductive silver paste Ag and the common electrode layer 200 can be in direct contact or indirect contact, such as by setting a flexible conductive glue on the common electrode layer 200 and then contacting the conductive silver paste Ag through the flexible conductive glue to achieve the input of the common electrode signal.

[0057] In order to provide a contact area between the conductive silver paste Ag and the conductive layer structure of the TFT layer, a colloidal through-hole is opened in the sealant Seal in the area opposite to the electrode opening 110. It can be understood that the colloidal through-hole is connected to the electrode opening 110. When filling the conductive silver paste Ag, the conductive silver paste Ag fills the colloidal through-hole and the electrode opening 110 and then overflows.

[0058] Furthermore, the filter layer includes an organic flat layer;

[0059] A light shielding layer BM is provided on the organic flat surface;

[0060] A first substrate B1 disposed on the light shielding layer;

[0061] A polarizing layer POL is provided on the first substrate B1.

[0062] The organic flat layer Organic is used to provide a flat surface for the upper structure; the light shielding layer BM is used to prevent light from leaking from the edge of the display screen; the first substrate B1 is a glass substrate; and the polarizing layer POL is used to eliminate reflected light from the external environment.

[0063] It can be understood that in actual preparation, the thin film transistor layer 100 and the CF layer need to be prepared separately and then aligned. Generally, the CF layer is turned upside down and aligned with the thin film transistor layer 100; therefore, when preparing the CF layer, the preparation order of each layer is opposite to the above structure. Specifically, the polarizing layer POL is prepared first, and the first substrate B1 is prepared on the polarizing layer POL, and the light shielding layer BM is prepared on the first substrate B1; after the prepared CF layer is turned upside down, the above structure is formed.

[0064] It should be noted that the specific structure of the filter layer can be set based on actual needs, and this embodiment exemplifies a feasible approach.

[0065] Furthermore, it is characterized in that the thin film transistor layer 100 includes a second substrate B2, the conductive layer structure is provided on the second substrate B2, and the electrode opening 110 is provided on the second substrate B2;

[0066] The conductive layer structure includes a first metal layer M1 provided on the second substrate B2, and the first metal layer M1 is connected to the in-plane common electrode signal line COM1;

[0067] a second metal layer M2 disposed on the first metal layer M1;

[0068] A first conductive glass layer ITO1 is disposed on the second metal layer M2 , and the first conductive glass layer ITO1 is in contact with the conductor.

[0069] The second substrate B2 provides stable support and protection for the liquid crystal panel; the second substrate B2 can be a glass substrate.

[0070] It can be understood that the second substrate B2 is the bottom layer of the conductive layer structure. Therefore, the common electrode layer 200 is arranged below the TFT layer. Therefore, by setting the electrode opening 110 on the second substrate B2, the connection between the upper structure and the common electrode layer 200 can be achieved.

[0071] It can be understood that the first metal layer M1, the second metal layer M2 and the first conductive glass layer ITO1 are all layer structures with conductive capabilities;

[0072] It can be understood that in the original TFT layer preparation, it has a certain layer structure, such as the first metal layer M1 is used to prepare the gate of the TFT, the second metal layer M2 is used to prepare the source and drain of the TFT, and the first conductive glass layer ITO1 is used to prepare the common electrode of the TFT; therefore, in this embodiment, although the electrode opening 110 is made on the second side of the TFT, which belongs to an independent area relative to the in-plane, in order to facilitate the implementation of the solution, the conductive layer structure around the electrode opening 110 can be designed based on the existing layer structure; that is, the conductive layer structure described in this embodiment has an independent layer similar to that in the plane, but the role of the specific layer is different. This design is based on common electrode signal input, and differs from the functions and design principles of the corresponding layers in the in-plane TFT structure. For example, taking the first metal layer M1, the second metal layer M2, and the first conductive glass layer ITO1 as an example, in this embodiment, the first conductive glass layer ITO1 is used to contact the conductive silver paste Ag, the first metal layer M1 is used to connect to the in-plane common electrode signal line COM1, and the second metal layer M2 transmits electrical signals between the first conductive glass layer ITO1 and the first metal layer M1. While the corresponding layers in the in-plane TFT structure share the same names and materials, their functions and configurations are significantly different. The same applies to the other layers, and will not be further described.

[0073] In this embodiment, by providing a conductive layer structure including a first metal layer M1 , a second metal layer M2 and a first conductive glass layer ITO1 , the common electrode signal is transmitted from the conductive silver paste Ag to the in-plane common electrode signal line COM1 .

[0074] Furthermore, the thin film transistor layer further includes an organic film layer provided on the second metal layer M2;

[0075] The organic film layer has a first opening O1 opposite to the electrode opening 110. The first opening O1 is sloped toward the electrode opening 110. The first conductive glass layer ITO1 extends from above the organic film layer to cover the side of the organic film layer and to the second substrate B2.

[0076] A second opening O2 is provided on the organic film layer, and the first conductive glass layer ITO1 is in contact with the second metal layer M2 through the second opening O2.

[0077] The PFA (Polymer Film On Array, organic film) layer is used to achieve planarization and provide a flat surface for the upper structure.

[0078] The PFA layer defines a first opening O1 opposite the electrode opening 110, thereby enabling communication between the electrode opening 110 and the sealant's colloid through-hole. After being filled with conductive silver paste, the conductive silver paste can contact the entire first opening O1 of the PFA layer and the portion contacting the colloid through-hole. The first conductive glass layer (ITO1) needs to contact the conductive silver paste to transmit the common electrode signal. Therefore, the first conductive glass is placed over the PFA layer at a position opposite the conductive silver paste, thereby maximizing contact between the first conductive glass and the conductive silver paste. Furthermore, the sloped side of the PFA layer facing the electrode opening 110 also increases the contact area between the first conductive glass and the conductive silver paste after coverage.

[0079] It can be understood that the PFA layer is insulating, and the PFA layer is arranged on the second metal layer M2, and the first conductive glass is arranged on the PFA layer. Therefore, the first conductive glass and the second metal layer M2 cannot be electrically connected through the PFA layer. Therefore, it is necessary to set a second opening O2 on the PFA layer so that the first conductive glass can directly contact the second metal layer M2 through the second opening O2 to achieve electrical conduction.

[0080] Furthermore, the conductive layer structure further includes a second insulating layer Pass2 disposed between the first conductive glass layer ITO1 and the organic film layer; the second insulating layer Pass2 defines a third opening O3 relative to the electrode opening 110, and the third opening O3 has a smaller aperture than the first opening O1; the second insulating layer Pass2 is disconnected at a side edge of the organic film layer, and the first conductive glass layer ITO1 forms a groove A1 between the second insulating layer Pass2 and the side edge of the organic film layer;

[0081] The second insulating layer Pass2 is opened at the second opening O2 of the organic film layer to form Pass2+PFAH.

[0082] The second insulating layer Pass2 is used to achieve insulation between different conductive layers. In this embodiment, the second insulating layer Pass2 is provided with a third opening O3 relative to the electrode opening 110, so that the electrode opening 110 can be connected to the colloid through-hole of the sealant Seal. At the same time, the aperture of the third opening O3 is smaller than the first opening O1, so that the second insulating layer Pass2 will exist at a position closer to the electrode opening 110, and no PFA layer will exist. At the same time, the second insulating layer Pass2 is disconnected at the PFA side, so that there is only the PFA layer at the disconnected position and no second insulating layer Pass2. The second insulating layer Pass2 is provided between the first conductive glass layer ITO1 and the PFA layer. When the first conductive glass layer ITO1 is prepared, the first conductive glass layer ITO1 will simultaneously cover the second conductive glass layer ITO1. The second insulating layer Pass2 and the PFA layer; thereby, the first conductive glass layer ITO1 on the second insulating layer Pass2 near the electrode opening 110 is higher, while the first conductive glass layer ITO1 above the position where the second insulating layer Pass2 is disconnected is lower, and the first conductive glass layer ITO1 on the side of the PFA layer gradually rises, so that the first conductive glass layer ITO1 forms a groove between the second insulating layer Pass2 and the side of the organic film layer; the presence of the groove further increases the contact area between the first conductive glass layer ITO1 and the conductive silver paste Ag; at the same time, the first conductive glass layer ITO1 is prone to cracks when covering the side of the PFA layer, and the provision of the groove structure can improve the stability of the first conductive glass layer ITO1 and prevent the occurrence of cracks.

[0083] It can be understood that the second insulating layer Pass2 is insulating, and the second insulating layer Pass2 is arranged on the second metal layer M2, and the first conductive glass is arranged on the second insulating layer Pass2. Therefore, the first conductive glass and the second metal layer M2 cannot be electrically connected through the second insulating layer Pass2. Therefore, it is necessary to set an opening on the second insulating layer Pass2 so that the first conductive glass can directly contact the second metal layer M2 through the second opening O2 to achieve electrical conduction.

[0084] Furthermore, the conductive layer structure further includes a second conductive glass layer ITO2 disposed between the second insulating layer Pass2 and the organic film layer;

[0085] The second conductive glass layer ITO2 covers the side of the organic film layer from above the organic film layer;

[0086] Between the first opening O1 and the second opening O2 of the organic film layer, a fourth opening O4 is provided in the contact section of the first conductive glass layer ITO1 with the sealant Seal, and the second insulating layer Pass2 contacts the sealant Seal through the fourth opening O4;

[0087] The second insulating layer Pass2 defines a fifth opening O5 between the fourth opening O4 and the second opening O2;

[0088] The first conductive glass layer ITO1 contacts the second conductive glass layer ITO2 through the fifth opening O5 .

[0089] It can be understood that the first conductive glass layer ITO1 is the top layer of the TFT layer, so the sealant Seal will adhere to the first conductive glass layer ITO1; and due to material properties, the adhesion between the second insulating layer Pass2 and the sealant Seal is better than the first conductive glass layer ITO1. Therefore, in this embodiment, relevant settings are used to ensure adhesion between the second insulating layer Pass2 and the sealant Seal, thereby improving airtightness.

[0090] Specifically, a fourth opening O4 is provided on the portion of the first conductive glass layer ITO1 that contacts the sealant Seal. Since the second insulating layer Pass2 is located below the first conductive glass, the second insulating layer Pass2 can contact the sealant Seal through the fourth opening O4, thereby improving airtightness.

[0091] However, the projection of the fourth opening O4 is set between the first opening O1 and the second opening O2 of the PFA layer. Therefore, the first conductive glass cannot establish an electrical connection between the conductive silver paste Ag and the second metal layer M2 due to the disconnection of the fourth opening O4. Therefore, in this embodiment, a fifth opening O5 is set in the PFA layer to form Pass2H, and a second conductive glass is set. The coverage of the second conductive glass extends from above the PFA layer to the side of the PFA. It should be noted that when the second conductive glass covers the PFA layer, it needs to cover the position below the fifth opening O5. At this time, due to the second insulating layer Pass 2 is disconnected at the side of the PFA layer. Therefore, the first conductive glass and the second conductive glass can contact each other at the side of the PFA layer. At the same time, because the fifth opening O5 of the second insulating layer Pass2 is arranged between the fourth opening O4 and the second opening O2, the first conductive glass and the second conductive glass can contact each other at the fifth opening O5. Therefore, the common electrode signal output by the conductive silver paste Ag can pass through the first conductive glass, the second conductive glass on the side of the PFA layer, and the second conductive glass at the fifth opening O5 in sequence to reach the second metal layer M2. While achieving improved airtightness, the transmission path of the common electrode signal is guaranteed.

[0092] Furthermore, the conductive layer structure further includes a gate insulating layer disposed between the first metal layer M1 and the second metal layer M2; wherein:

[0093] The gate insulating layer is provided with a sixth opening O6 at a position where the gate insulating layer contacts both the first metal layer M1 and the second metal layer M2 . The first metal layer M1 contacts the second metal layer M2 through the sixth opening O6 .

[0094] The GI (Gate Insulator) layer is arranged on the first metal layer M1, and the gate insulating layer is insulating. Therefore, no electrical connection can be established between the first metal layer M1 and the second metal layer M2; therefore, in this embodiment, a sixth opening O6 is provided on the gate insulating layer to form a GIH, and the sixth opening O6 is positioned to contact the first metal layer M1 and the second metal layer M2 at the same time, so that the first metal layer M1 and the second metal layer M2 can be electrically connected through the sixth opening O6.

[0095] Furthermore, the conductive layer structure further includes a first insulating layer Pass1 disposed on the gate insulating layer and the second metal layer M2 and below the organic film layer; the first insulating layer Pass1 opens at the second opening O2 of the organic film layer.

[0096] By providing the first insulating layer Pass1 to wrap the underlying layer structure, the airtightness can be further improved. However, since the first insulating layer Pass1 is an insulating layer, after providing the first insulating layer Pass1, the second metal layer M2 and the first conductive glass layer ITO1 will not be electrically connected due to the presence of the first insulating layer Pass1. Therefore, in this embodiment, an opening is made in the first insulating layer Pass1 at a position corresponding to the second opening O2, thereby enabling contact between the first conductive glass layer ITO1 and the second metal layer M2.

[0097] See also Figure 5 ,based on Figure 5 The preparation process of the TFT layer in this application is described as follows:

[0098] It should be noted that this embodiment is described by taking 8 masks and 2 dry etching processes as an example. In practical applications, a specific preparation process can also be set based on actual needs.

[0099] 1. Prepare a second substrate B2, and prepare a first metal layer M1 on the second substrate B2 based on the mask;

[0100] 2. Prepare a gate insulating layer based on a mask to avoid the electrode opening 110, and open the hole through a dry process;

[0101] 3. Prepare a second metal layer M2 based on the mask;

[0102] 4. Prepare the first insulating layer Pass1;

[0103] 5. Prepare a PFA layer based on the mask, avoiding the electrode opening 110 and the second opening O2;

[0104] 6. Prepare the second conductive glass layer ITO2 based on the mask to avoid the electrode opening 110;

[0105] 7. Prepare the second insulating layer Pass2 based on the mask to avoid the electrode opening 110, and open holes from the second insulating layer Pass2 to the first insulating layer Pass1 through a dry process;

[0106] 8. Prepare the first conductive glass layer ITO1 based on the mask, avoiding the electrode opening 110 and the fourth opening O4.

[0107] It should be noted that, in this article, the terms "comprises", "includes" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or system comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or system. In the absence of further restrictions, an element defined by the sentence "comprises a..." does not exclude the presence of other identical elements in the process, method, article or system comprising the element. The serial numbers of the above-mentioned embodiments of the present invention are for description only and do not represent the advantages and disadvantages of the embodiments.

[0108] The above are only preferred embodiments of the present invention and are not intended to limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made using the contents of the present invention description and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A display panel, characterized in that: The display panel includes a thin film transistor layer, a common electrode layer, and an in-plane common electrode signal line; a first side of the thin film transistor layer connects the common electrode layer to the in-plane common electrode signal line via a common electrode terminal; an electrode opening and a conductive layer structure are provided on a second side of the thin film transistor layer, wherein the second side is arranged opposite to the first side; a conductor is filled in the electrode opening, and the conductor is respectively connected to the conductive layer structure and the common electrode layer; the conductive layer structure is also connected to the in-plane common electrode signal line; The thin film transistor layer includes a second substrate, the conductive layer structure is arranged on the second substrate, and the electrode opening is arranged on the second substrate; The conductive layer structure includes a first metal layer provided on the second substrate, the first metal layer being connected to the in-plane common electrode signal line; a second metal layer disposed on the first metal layer; a first conductive glass layer disposed on the second metal layer, wherein the first conductive glass layer is in contact with the conductor; The thin film transistor layer further includes an organic film layer disposed on the second metal layer; The organic film layer is provided with a first opening opposite to the electrode opening, and the side of the first opening facing the electrode opening is sloped, and the first conductive glass layer covers the side of the organic film layer from above the organic film layer and extends to the second substrate; A second opening is provided on the organic film layer, and the first conductive glass layer contacts the second metal layer through the second opening; The conductive layer structure further includes a second insulating layer disposed between the first conductive glass layer and the organic film layer; the second insulating layer is provided with a third opening opposite to the electrode opening, the third opening having a smaller aperture than the first opening; the second insulating layer is disconnected at a side edge of the organic film layer, and the first conductive glass layer forms a groove between the second insulating layer and the side edge of the organic film layer; The second insulating layer opens at the second opening of the organic film layer.

2. The display panel according to claim 1, wherein The display panel further includes a filter layer and a sealant; wherein: The filter layer and the thin film transistor layer are arranged opposite to each other, and the sealant is arranged between the side of the filter layer and the side of the thin film transistor layer; A colloid through-hole is provided in the sealant in an area opposite to the electrode opening. The conductor is filled in the colloid through-hole and overflows through the electrode opening to connect with the common electrode layer.

3. The display panel according to claim 2, wherein: The filter layer includes an organic flat layer; A light shielding layer provided on the organic flat surface; a first substrate disposed on the light-shielding layer; A polarizing layer is provided on the first substrate.

4. The display panel according to claim 1, wherein: The conductive layer structure further includes a second conductive glass layer disposed between the second insulating layer and the organic film layer; The second conductive glass layer covers the side of the organic film layer from above the organic film layer; Between the first opening and the second opening of the organic film layer, a fourth opening is provided in the contact section of the first conductive glass layer with the sealant, and the second insulating layer contacts the sealant through the fourth opening; The second insulating layer is provided with a fifth opening between the fourth opening and the second opening; The first conductive glass layer contacts the second conductive glass layer through the fifth opening.

5. The display panel according to claim 1, wherein The conductive layer structure further includes a gate insulating layer disposed between the first metal layer and the second metal layer; wherein: The gate insulating layer is provided with a sixth opening at a position where the gate insulating layer contacts the first metal layer and the second metal layer at the same time, and the first metal layer contacts the second metal layer through the sixth opening.

6. The display panel according to claim 5, wherein: The conductive layer structure further includes a first insulating layer disposed on the gate insulating layer and the second metal layer and below the organic film layer; the first insulating layer opens at the second opening of the organic film layer.

7. The display panel according to claim 1, wherein: The conductor is conductive silver paste.

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