Semiconductor device, preparation method thereof and semiconductor equipment

Abstract

The embodiment of the invention relates to a semiconductor device, a preparation method thereof and semiconductor equipment. The preparation method comprises the following steps: placing a substrate on a bearing table of a deposition chamber, and forming an initial material layer on the surface of the substrate; a plurality of adsorption holes are formed in the bearing table, the bearing table is used for bearing and transmitting heat to the substrate, the initial material layer comprises an abnormal area, and projections of the adsorption holes on the substrate are located in the abnormal area; determining parameter information corresponding to the initial material layer of the abnormal area, wherein the parameter information is used for representing the thickness of the initial material layer; and according to the parameter information, adjusting a first grinding parameter for performing chemical mechanical grinding on the initial material layer of the abnormal region. Defects caused by the film thickness of the initial material layer of the abnormal region are avoided, and the product yield of the semiconductor device is improved.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to the field of semiconductor technology, and in particular, to a semiconductor device and a method for preparing the same, and a semiconductor device. Background Art

[0002] The Shallow Trench Isolation High Aspect Ratio Process (STI HARP) is mainly used for filling STI trenches, including: the first step is to form a silicon dioxide film layer on a substrate with a trench, the silicon dioxide film layer fills the trench and extends to the silicon nitride layer in the active area; the second step is to remove the excess silicon dioxide film layer on the surface of the substrate by chemical mechanical polishing, and retain the silicon dioxide film layer in the trench as a shallow trench isolation structure to achieve device insulation.

[0003] When the silicon dioxide film layer is locally thick, there will be silicon dioxide residue on the silicon nitride film layer after chemical mechanical polishing, which will affect the subsequent removal of the silicon nitride film layer, form silicon nitride residue, and reduce product yield. How to avoid silicon dioxide residue has become an urgent problem to be solved. Summary of the invention

[0004] The embodiments of the present disclosure provide a semiconductor device and a method for manufacturing the same, as well as a semiconductor device, which can reduce the impact of film thickness differences on product yield.

[0005] A method for preparing a semiconductor device, comprising:

[0006] Placing a substrate on a carrier platform of a deposition chamber and forming an initial material layer on the surface of the substrate; a plurality of adsorption holes are provided on the carrier platform, and the carrier platform is used to carry and transfer heat to the substrate;

[0007] forming an initial material layer on the surface of the substrate, wherein the initial material layer includes an abnormal region, and the orthographic projection of the adsorption hole on the substrate is located in the abnormal region;

[0008] confirming parameter information corresponding to the initial material layer of the abnormal area, wherein the parameter information is used to characterize the thickness of the initial material layer;

[0009] According to the parameter information, a first polishing parameter of chemical mechanical polishing of the initial material layer in the abnormal area is adjusted.

[0010] In one embodiment, the initial material layer includes a first test area surrounding the center of the substrate, the abnormal area is located in the first test area, and the parameter information corresponding to the initial material layer of the abnormal area is confirmed to include:

[0011] A plurality of first measurement points are selected in the first test area; the distance between the first measurement point and the center of the circle is equal to a preset value, and the plurality of first measurement points are evenly arranged along the circumference of the first test area, and the preset value is the distance between the center point of the orthographic projection of the adsorption hole on the substrate and the center of the circle;

[0012] Measure and obtain a first intermediate thickness of the initial material layer corresponding to each first measuring point;

[0013] The first thickness of the initial material layer is obtained according to the first intermediate thickness corresponding to each first measurement point, and the first thickness is used as the parameter information.

[0014] In one embodiment, there is at least one first measurement point whose distance between the orthographic projection on the supporting platform and the adjacent adsorption hole is less than or equal to a preset distance, and the preset distance is the maximum distance between the orthographic projection of the adsorption hole on the substrate and the edge of the abnormal area.

[0015] In one embodiment, the initial material layer further includes a plurality of second test areas surrounding the center of the circle, and the first test area is adjacent to at least one of the second test areas; and the method for preparing a semiconductor device further includes:

[0016] determining a second thickness of the initial material layer at each of the second test areas;

[0017] adjusting a second polishing parameter for chemical mechanical polishing of the initial material layer of each second test area according to the second thickness of each second test area;

[0018] The plurality of second test areas are arranged along the radius of the substrate, and the number of second measurement points corresponding to the second test areas close to the center of the circle is less than the number of second measurement points corresponding to the second test areas far from the center of the circle.

[0019] In one embodiment, the step of confirming parameter information corresponding to the initial material layer of the abnormal area includes:

[0020] In the step of depositing and forming the initial material layer, a first pressure of a vacuum line connected to the adsorption hole is measured and obtained, and the first pressure is used as the parameter information.

[0021] In one embodiment, the method for preparing a semiconductor device further includes:

[0022] According to the parameter information, the pressure of the vacuum pipeline connected to the adsorption hole is adjusted.

[0023] A semiconductor device comprising:

[0024] A deposition chamber, wherein a plurality of carriers are arranged in the deposition chamber, a plurality of adsorption holes are opened on the carriers, the carriers are used to carry and transfer heat to the substrate, the deposition chamber is used to form an initial material layer, the initial material layer includes an abnormal area, and the projection of the adsorption holes on the substrate is located in the abnormal area;

[0025] A vacuum pipeline is arranged corresponding to the carrying platform and is connected to the adsorption hole opened in the carrying platform;

[0026] A first vacuum pump is disposed corresponding to the deposition chamber and is respectively connected to the vacuum pipeline corresponding to each of the supporting platforms in the deposition chamber to extract gas from the vacuum pipeline connected thereto;

[0027] A control device, for generating a first control signal according to parameter information corresponding to the initial material layer of the abnormal area of ​​the preset substrate, wherein the first control signal is used to control the speed at which the first vacuum pump extracts gas from the vacuum pipeline corresponding to the preset carrier to adjust its pressure;

[0028] Wherein, during the process of forming the initial material layer, the preset substrate is located on the preset supporting platform, and the parameter information is used to characterize the thickness of the initial material layer.

[0029] In one embodiment, the semiconductor device further comprises:

[0030] a regulating valve, arranged corresponding to the vacuum pipeline, and used for adjusting the aperture of the gas flow in the corresponding vacuum pipeline according to the first control signal;

[0031] Wherein, the size of the regulating valve is the same as the aperture of the corresponding vacuum pipeline.

[0032] In one of the embodiments, the semiconductor device further comprises: a chamber vacuum line, communicating with the deposition chamber;

[0033] Wherein, the first vacuum pump is also connected to the chamber vacuum pipeline, and when the chamber vacuum pipeline is connected to the first vacuum pump, the gas in the deposition chamber is extracted; or the semiconductor device also includes: a second vacuum pump, which is connected to the chamber vacuum pipeline, and when the chamber vacuum pipeline is connected to the second vacuum pump, the gas in the deposition chamber is extracted.

[0034] In one embodiment, the semiconductor device further comprises:

[0035] A testing device, arranged corresponding to the deposition chamber, for detecting the pressure in the vacuum pipeline corresponding to a plurality of carriers in the deposition chamber, and generating a plurality of pressure detection signals;

[0036] Among them, multiple pressure detection signals correspond to multiple support platforms respectively, and the control device is also used to generate the first control signal according to the pressure detection signal corresponding to the preset support platform.

[0037] In one embodiment, the testing device comprises:

[0038] Multiple first test modules, multiple first test modules and multiple vacuum pipelines corresponding to the support platforms are respectively arranged correspondingly, and the first test modules are used to measure the pressure of the corresponding vacuum pipelines.

[0039] In one embodiment, the semiconductor device further comprises:

[0040] The gas pipeline is used to introduce gas into each of the vacuum pipelines corresponding to the deposition chamber to increase the pressure of the vacuum pipeline.

[0041] In one embodiment, a plurality of carriers are provided in the deposition chamber, and a plurality of substrates are respectively provided corresponding to the plurality of carriers, and the control device is further used to generate a second control signal according to parameter information corresponding to the initial material layer of the abnormal area on the surface of the plurality of substrates;

[0042] The second control signal is used to control the speed at which the first vacuum pump extracts gas from the vacuum pipelines corresponding to the plurality of carriers, so that the pressures of the vacuum pipelines corresponding to different carriers are the same.

[0043] A semiconductor device is manufactured by using the above-mentioned semiconductor device manufacturing method; or is manufactured by using the above-mentioned semiconductor equipment.

[0044] In the above-mentioned method for preparing the semiconductor device, the first grinding parameters of the chemical mechanical grinding of the initial material layer in the abnormal area are adjusted according to the parameter information characterizing the thickness of the initial material layer in the abnormal area, thereby avoiding defects caused by the film thickness of the initial material layer in the abnormal area and improving the product yield of the semiconductor device.

[0045] In the above-mentioned semiconductor equipment, the control device generates a first control signal based on parameter information characterizing the thickness of the initial material layer in the abnormal area on the surface of the preset substrate, controls the speed at which the first vacuum pump extracts the gas from the vacuum pipeline corresponding to the preset carrier platform, thereby adjusting the pressure of the vacuum pipeline corresponding to the preset carrier platform where the preset substrate is located during the formation of the initial material layer, avoiding abnormal film thickness of the initial material layer in the abnormal area on the surface of the preset substrate corresponding to the preset carrier platform, improving the utilization rate of the semiconductor equipment, and reducing the maintenance cost of the semiconductor equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or related technologies, the drawings required for use in the embodiments or related technical descriptions will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0047] FIG1 is a schematic flow chart of a method for preparing a semiconductor device in some embodiments;

[0048] FIG2A is a schematic top view of a substrate after an initial material layer is formed in some embodiments;

[0049] Figure 2B is a schematic cross-sectional view of a substrate after an initial material layer is formed in some embodiments;

[0050] Figure 3 is the relationship between the pressure and the thickness difference of the vacuum pipeline in some embodiments;

[0051] Figure 4 A schematic diagram of the structure of a semiconductor device in some embodiments;

[0052] Figure 5 A schematic diagram of the structure of a semiconductor device in some embodiments;

[0053] Figure 6 Schematic diagram of the structure of semiconductor devices in some embodiments.

[0054] Component number description:

[0055] Substrate 100, 406; abnormal area 102; initial material layer 103; first test area 104; second test area 106, 1061, 1062, 1063; support platform 200, 402; adsorption holes 201, 404; first measurement point 202; second measurement points 204, 2041, 2042, 2043; deposition chamber 302; vacuum line 304; control device 306; first vacuum pump 308; first communication control valve 310; vacuum valve 312; chamber vacuum line 314; isolation valve 316; second communication control valve 318; regulating valve 320; test device 322; second vacuum pump 324; gas line 326; first test module 408; second test module 410. DETAILED DESCRIPTION

[0056] In order to facilitate understanding of the embodiments of the present disclosure, the embodiments of the present disclosure will be described more fully below with reference to the relevant drawings. The preferred embodiments of the embodiments of the present disclosure are shown in the drawings. However, the embodiments of the present disclosure can be implemented in many different forms and are not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the embodiments of the present disclosure more thorough and comprehensive.

[0057] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which the disclosed embodiments belong. The terms used herein in the specification of the disclosed embodiments are only for the purpose of describing specific embodiments and are not intended to limit the disclosed embodiments. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0058] In the description of the embodiments of the present disclosure, it should be understood that the terms "upper", "lower", "vertical", "horizontal", "inside", "outside", etc. indicating orientations or positional relationships are based on the methods or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present disclosure and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the embodiments of the present disclosure.

[0059] It is understood that the terms "first", "second", etc. used in the present disclosure may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish a first element from another element. For example, without departing from the scope of the present disclosure, the first vacuum pump may be referred to as the second vacuum pump, and similarly, the second vacuum pump may be referred to as the first vacuum pump. Both the first vacuum pump and the second vacuum pump are vacuum pumps, but they are not the same vacuum pump.

[0060] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of the present disclosure, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. In the description of the present disclosure, the meaning of "several" is at least one, such as one, two, etc., unless otherwise clearly and specifically defined.

[0061] FIG. 1 is a schematic diagram of a process of manufacturing a semiconductor device in some embodiments, FIG. 2A is a schematic diagram of a top view of a substrate after an initial material layer is formed in some embodiments, Figure 2B 1, 2A, and 2B are cross-sectional views of a substrate after an initial material layer is formed in some embodiments. Figure 2BAs shown, in order to solve the above problems, in this embodiment, a method for preparing a semiconductor device is provided, comprising:

[0062] S102, placing the substrate on a carrier platform of a deposition chamber.

[0063] Specifically, a substrate 100 for forming a semiconductor device is provided. Exemplarily, the constituent material of the substrate 100 includes one or any combination of undoped single crystal silicon, single crystal silicon doped with impurities, silicon on insulator (SOI), stacked silicon on insulator (SSOI), stacked silicon germanium on insulator (S-SiGeOI), silicon germanium on insulator (SiGeOI), germanium on insulator (GeOI), gallium arsenide (GaAs), gallium nitride (GaN), and silicon carbide (SiC). Then, the substrate 100 is placed on a carrier 200 in a deposition chamber, the deposition chamber is a reaction chamber for forming an initial material layer, the reaction for forming the initial material layer is a thermal reaction, and the temperature has a relatively large effect on the thickness of the initial material layer; the carrier 200 is provided with a plurality of adsorption holes 201, and the carrier 200 is used to carry the substrate 100 and transfer heat from the carrier 200 to the substrate 100 to achieve heating of the substrate 100. After the substrate 100 is placed on the carrier 200, the opening of the adsorption hole 201 close to the substrate 100 is covered by the substrate 100, and the vacuum pump adsorbs the substrate 100 on the carrier 200 or releases the substrate 100 from the carrier 200 by controlling the pressure in the vacuum pipeline connected to the adsorption hole 201.

[0064] S104, forming an initial material layer on the surface of the substrate.

[0065] An initial material layer 103 is formed on the surface of the substrate 100. During the process of forming the initial material layer 103, the substrate 100 is adsorbed on the carrier 200 until the deposition of the initial material layer 103 is completed. Before taking out the substrate 100 with the initial material layer 103 formed on the surface from the deposition chamber, it is necessary to release the pressure in the adsorption holes 201 and the vacuum pipeline to release the substrate 100 from the carrier 200. The initial material layer 103 includes an abnormal area 102, which is a region where the thickness of the initial material layer 103 increases due to the adsorption holes 201. The orthographic projection of the adsorption holes 201 on the substrate 100 is located in the abnormal area 102. When the initial material layer 103 is subsequently removed by grinding using a chemical mechanical process with the same grinding parameters, the initial material layer will remain in the abnormal area 102.

[0066] The adsorption of the substrate 100 by the vacuum pump through the adsorption holes 201 will affect the heat conduction from the carrier 200 to the part of the substrate 100 covering the adsorption holes 201. The adsorption strength of the substrate 100 decreases with the increase of the pressure of the vacuum pipeline. The decrease in adsorption strength makes the heat conduction from the carrier 200 to the part of the substrate 100 covering the adsorption holes 201 (the substrate 100 in the area where the positive projection of the adsorption holes 201 on the substrate 100 is located) worse, thereby affecting the thickness of the initial material layer 103 in the abnormal area 102, making the thickness of the initial material layer 103 in the abnormal area 102 greater than the thickness of the initial material layer 103 in the area outside the abnormal area 102. Therefore, the pressure of the vacuum pipeline can reflect the thickness of the initial material layer 103 in the abnormal area 102.

[0067] S106, confirming parameter information corresponding to the initial material layer of the abnormal area.

[0068] Confirm parameter information corresponding to the initial material layer 103 of the abnormal region 102, where the parameter information is used to characterize the thickness of the initial material layer 103 of the abnormal region 102, that is, the parameter information includes parameters related to the thickness of the initial material layer 103. As an example, the parameter information includes pressure information of the vacuum line and thickness information of the initial material layer 103 of the abnormal region 102.

[0069] S108, adjusting a first polishing parameter for chemical mechanical polishing of the initial material layer in the abnormal area according to the parameter information.

[0070] According to the parameter information corresponding to the initial material layer 103 in the abnormal region 102, the first polishing parameter for chemical mechanical polishing of the initial material layer 103 in the abnormal region 102 is adjusted, and the first polishing parameter is a process parameter for chemical mechanical polishing of the initial material layer 103. After chemical mechanical polishing of the initial material layer 103 on the surface of the substrate 100, residual defects are avoided at the position corresponding to the abnormal region 102.

[0071] It can be understood that, during the chemical mechanical polishing of the initial material layer 103, the speed of polishing the initial material layer 103 in the abnormal region 102 can be adjusted by adjusting the pressure parameter in the polishing parameters corresponding to the initial material layer 103 in the abnormal region 102. Within a certain range, the speed of polishing the initial material layer 103 can be increased when the pressure parameter is increased, and the speed of polishing the initial material layer 103 can be reduced when the pressure parameter is reduced. The speed of polishing the initial material layer 103 is related to the product as the pressure parameter in the polishing parameters changes, and can be adjusted accordingly according to different products.

[0072] In the above-mentioned method for preparing the semiconductor device, the first grinding parameters of the chemical mechanical grinding of the initial material layer 103 in the abnormal region 102 are adjusted according to the parameter information characterizing the thickness of the initial material layer 103 in the abnormal region 102, thereby avoiding defects caused by the film thickness of the initial material layer 103 in the abnormal region 102 and improving the product yield of the semiconductor device.

[0073] As shown in Figure 2A, Figure 2B As shown, the initial material layer 103 includes a first test area 104 surrounding the center of the substrate 100, and the abnormal area 102 is located in the first test area 104; illustratively, two oppositely arranged adsorption holes 201 are arranged on the supporting platform 200, and the initial material layer 103 includes two oppositely arranged abnormal areas 102. When the initial material layer 103 is ground using the same grinding parameters, the thickness of the remaining initial material layer 103 in the abnormal area 102 is different from that in other areas; further, the first test area 104 completely surrounds the center of the substrate 100.

[0074] As shown in Figure 2A, Figure 2B As shown, in one embodiment, the parameter information is the first thickness of the initial material layer 103 of the abnormal region 102; the step of confirming the parameter information corresponding to the initial material layer 103 of the abnormal region 102 includes steps S202-S206.

[0075] S202 , selecting a plurality of first measuring points 202 in the first test area 104 .

[0076] S204 , measuring and obtaining the first intermediate thickness T0x of the initial material layer 103 corresponding to each first measuring point 202 .

[0077] S206 , obtaining a first thickness T0 of the initial material layer 103 according to the first intermediate thickness T0x corresponding to each first measurement point 202 .

[0078] Steps S202-S206 are specifically as follows: first, multiple first measurement points 202 are selected in the first test area 104, and the distance between the first measurement point 202 and the center of the circle of the substrate 100 is equal to a preset value, and the preset value is the distance between the center point of the positive projection of the adsorption hole 201 on the substrate 100 and the center of the circle. For example, the preset distance and the preset value are both 21 mm; secondly, the first intermediate thickness T0x of the initial material layer 103 corresponding to each first measurement point 202 is measured. The inline test of the product is to divide the measurement position according to the exposure area (shot). Due to the different chip sizes of semiconductor devices, the measurement positions of the measurement points of the inline test are different. The distance between the first measurement point 202 and the center of the circle is equal to the distance between the center point of the positive projection of the adsorption hole 201 on the substrate 100 and the center of the circle. Therefore, the thickness of the initial material layer 103 at the first measurement point 202 can reflect the thickness of the initial material layer 103 in the abnormal area 102. Thirdly, according to the first intermediate thickness T0x of the initial material layer 103 corresponding to each first measuring point 202 , the first thickness T0 of the initial material layer 103 is obtained.

[0079] It can be understood that the more the number of first measurement points 202 selected in the first test area 104 is, the more timely the abnormal thickness of the initial material layer 103 can be measured, and the smaller the deviation between the first thickness T0 obtained according to the first intermediate thickness T0x corresponding to each first measurement point 202 and the thickness of the initial material layer 103 in the abnormal area 102 is, the higher the product yield of the semiconductor device is. Exemplarily, the number of first measurement points 202 is greater than or equal to 12.

[0080] Adjusting the first grinding parameter of chemical mechanical grinding of the initial material layer 103 in the abnormal region 102 according to the parameter information includes: adjusting the first grinding parameter of chemical mechanical grinding of the initial material layer 103 in the abnormal region 102 according to the first thickness of the initial material layer 103 in the abnormal region 102 .

[0081] In some embodiments, according to the first intermediate thickness T0x of the initial material layer 103 corresponding to each first measurement point 202, the step of obtaining the first thickness T0 of the initial material layer 103 includes: obtaining the average value of the first intermediate thickness T0x of the initial material layer 103 corresponding to each first measurement point 202, and using it as the first thickness T0 of the initial material layer 103.

[0082] In some embodiments, according to the first intermediate thickness T0x of the initial material layer corresponding to each first measurement point 202, the step of obtaining the first thickness T0 of the initial material layer 103 includes: obtaining the maximum value of the first intermediate thickness T0x of the initial material layer 103 corresponding to each first measurement point 202, and using it as the first thickness T0 of the initial material layer 103.

[0083] In one embodiment, there is at least one first measuring point 202 whose distance between its orthographic projection on the supporting platform 200 and the adjacent adsorption hole 201 is less than or equal to a preset distance, and the preset distance is the maximum distance between the center point of the orthographic projection of the adsorption hole 201 on the substrate 100 and the edge of the abnormal area 102.

[0084] As shown in Figure 2A, Figure 2B As shown, in one embodiment, multiple first measurement points 202 are evenly arranged along the circumferential direction of the first test area 104, that is, the first measurement points 202 are set on a preset circle whose distance from the center of the circle is equal to a preset value, and the distances between adjacent first measurement points 202 on the circumference of the preset circle are the same, which simplifies the difficulty of selecting the first measurement points 202.

[0085] In one embodiment, multiple first measurement points 202 are randomly arranged along the circumferential direction of the first test area 104, that is, the first measurement points 202 are set on a preset circle whose distance from the center of the circle is equal to a preset value, and the distances between adjacent first measurement points 202 on the circumference of the preset circle are randomly set. This setting can avoid the problem that the thickness of the initial material layer at the first measurement point 202 cannot reflect the abnormal film thickness of the initial material layer.

[0086] In one embodiment, the initial material layer also includes a plurality of second test areas 106 surrounding the center of the circle, and the first test area 104 is adjacent to at least one of the second test areas 106; as shown in FIG2A, illustratively, the second test area 106 includes a second test area 1061, a second test area 1062, and a second test area 1063, and the first test area 104 is adjacent to the second test area 1061 and the second test area 1062, respectively, for example, the second test area 1061, the first test area 104, the second test area 1062, and the second test area 1163 are respectively concentric circles or rings with radii from small to large.

[0087] In one embodiment, the method for preparing a semiconductor device further includes steps S302 - S304 .

[0088] S302 , confirming the second thickness T1x of the initial material layer in each of the second test areas 106 .

[0089] As shown in Figure 2A, Figure 2BAs shown, specifically, N1 second measurement points 2041 are selected in the second test area 1061, N2 second measurement points 2042 are selected in the second test area 1062, and N3 second measurement points 2043 are selected in the third test area 1063, wherein N1, N2 and N3 are integers greater than or equal to 1; according to the second thickness of the initial material layer corresponding to the N1 second measurement points 2041, the second thickness T11 of the initial material layer of the second test area 1061 is obtained; according to the second thickness of the initial material layer corresponding to the N2 second measurement points 2042, the second thickness T12 of the initial material layer of the second test area 1062 is obtained; according to the second thickness of the initial material layer corresponding to the N2 second measurement points 2042, the second thickness T13 of the initial material layer of the third test area 1063 is obtained.

[0090] In one embodiment, a plurality of second test areas 106 are arranged along the radius of the substrate, and the number of second measurement points 204 corresponding to the second test areas 106 close to the center of the circle is less than the number of second measurement points 204 corresponding to the second test areas 106 far from the center of the circle. This arrangement can improve the accuracy and test rate of measuring the second thickness of the initial material layer corresponding to each second test area 106.

[0091] For example, as shown in FIG. 2A, Figure 2B As shown, the second test area 1061, the second test area 1062 and the second test area 1063 are arranged along the radial direction of the substrate, from the center of the circle to the direction away from the center of the circle, the number N1 of the second measurement points 2041 is smaller than the number N2 of the second measurement points 2042, and smaller than the number N3 of the second measurement points 2043, and the number N2 of the second measurement points 2042 is smaller than the number N3 of the second measurement points 2043.

[0092] Furthermore, the size of the substrate is a circle with a diameter of 300 mm (for example, a 12-inch wafer), N1 second measurement points 2041 in the second test area 1061 are on a circle less than 50 mm from the center of the circle, N2 second measurement points 2042 in the second test area 1062 are on a circle with a distance of 97 mm from the center of the circle, and N3 second measurement points 2043 in the second test area 1063 are on a circle with a distance of 147 mm from the center of the circle.

[0093] S304 , adjusting second polishing parameters for chemical mechanical polishing of the initial material layer in each of the second test areas according to the second thickness T1x of each of the second test areas.

[0094] According to the second thickness T11 of the initial material layer in the second test area 1061, the second grinding parameter C11 for chemical mechanical grinding of the initial material layer in the second test area 1061 is adjusted; according to the second thickness T12 of the initial material layer in the second test area 1062, the second grinding parameter C12 for chemical mechanical grinding of the initial material layer in the second test area 1062 is adjusted; according to the second thickness T13 of the initial material layer in the second test area 1063, the second grinding parameter C13 for chemical mechanical grinding of the initial material layer in the second test area 1063 is adjusted.

[0095] In some embodiments, a second polishing parameter for chemical mechanical polishing the initial material layer in the second test area 106 is determined according to a second thickness T1x of the initial material layer in the second test area 106 and a first thickness T0 of the initial material layer in the abnormal area 102 .

[0096] Exemplarily, the thickness difference between the second thickness T1x and the first thickness T0 is ⊿T= T0-T1x, the first thickness T0 is greater than or equal to the second thickness T1x, and when the ⊿T corresponding to the second thickness T1x is between 0 angstroms and 100 angstroms, the pressure parameter for chemical mechanical polishing of the second test area 106 corresponding to the second thickness T1x is Y11; when the ⊿T corresponding to the second thickness T1x is between 100 angstroms and 200 angstroms, the pressure parameter for chemical mechanical polishing of the second test area 106 corresponding to the second thickness T1x is Y12; when the ⊿T corresponding to the second thickness T1x is between 200 angstroms and 250 angstroms, the pressure parameter for chemical mechanical polishing of the second test area 106 corresponding to the second thickness T1x is Y13; When the ⊿T corresponding to T1x is between 250 angstroms and 300 angstroms, the pressure parameter for chemical mechanical polishing of the second test area 106 corresponding to the second thickness T1x is Y14; when the ⊿T corresponding to the second thickness T1x is between 300 angstroms and 400 angstroms, the pressure parameter for chemical mechanical polishing of the second test area 106 corresponding to the second thickness T1x is Y15; the larger the difference ⊿T is, the larger the thickness of the initial material layer to be polished and removed is. Increasing the pressure parameter for chemical mechanical polishing can speed up the polishing of the initial material layer, reduce the difference between the second thickness T1x and the first thickness T0, and reduce the influence of the excessive thickness of the abnormal area 102 on the performance of the semiconductor device. Therefore, Y15 is greater than or equal to Y14, Y14 is greater than or equal to Y13, Y13 is greater than or equal to Y12, and Y12 is greater than or equal to Y11.

[0097] In one embodiment, the parameter information is the first pressure of the vacuum pipeline connected to the adsorption hole, and the step of confirming the parameter information corresponding to the initial material layer of the abnormal area includes: in the step of depositing the initial material layer, measuring the first pressure of the vacuum pipeline connected to the adsorption hole.

[0098] Specifically, the step of depositing and forming the initial material layer refers to a process in which the thickness of the initial material layer on the substrate increases with the increase of process time. After the initial material layer is formed on the substrate surface, when the thickness of the initial material layer is abnormal in the area corresponding to the substrate surface and the adsorption hole (abnormal area 102), the conventional practice is to replace the carrier or clean the vacuum pipeline. The cost of replacing the carrier is high, the probability of cleaning the vacuum pipeline to improve the abnormal film thickness is uncontrollable, and the process of cleaning the vacuum pipeline requires shutdown, which reduces the overall utilization rate of the machine. When the pressure in the vacuum pipeline is high, the adsorption force of the substrate on the carrier through the vacuum pipeline and the adsorption hole is small, the heat conduction between the carrier and the substrate becomes poor, and the film thickness of the initial material layer formed in the area corresponding to the substrate surface and the adsorption hole (abnormal area 102) is much greater than the film thickness of the initial material layer at other positions. Therefore, the first pressure of the vacuum pipeline connected to the adsorption hole can be used to characterize the thickness of the initial material layer 103 in the abnormal area 102.

[0099] Figure 3 is the relationship between the pressure of the vacuum line and the thickness difference in some embodiments, where the thickness difference is the difference between the thickness of the initial material layer 103 located in the abnormal area 102 and the thickness of the initial material layer 103 located in the second test area 106, such as Figure 3 As shown, taking the material of the initial material layer as silicon dioxide as an example, when the pressure of the vacuum pipeline is 6.2 Torr, the thickness difference is 200 angstroms; when the pressure of the vacuum pipeline is 5.9 Torr, the thickness difference is 70 angstroms; when the pressure of the vacuum pipeline is 5.5 Torr, the thickness difference is 60 angstroms; when the pressure of the vacuum pipeline is 4.9 Torr, the thickness difference is 50 angstroms. It can be seen that the pressure of the vacuum pipeline is highly correlated with the thickness of the initial material layer 103 at the projection position of the adsorption hole on the substrate in the abnormal area 102, and the thickness of the initial material layer 103 corresponding to the abnormal area 102 can be characterized by the pressure of the vacuum pipeline.

[0100] At this time, adjusting the first polishing parameter of chemical mechanical polishing of the initial material layer in the abnormal area according to the parameter information includes: adjusting the first polishing parameter of chemical mechanical polishing of the initial material layer in the abnormal area according to the first pressure of the vacuum pipeline.

[0101] Exemplarily, in the step of forming the initial material layer, when the first pressure of the vacuum pipeline is 4.0 Torr-5.0 Torr, the pressure parameter for chemical mechanical polishing of the abnormal area 102 is Y21; in the step of forming the initial material layer, when the first pressure of the vacuum pipeline is 5.0 Torr-5.5 Torr, the pressure parameter for chemical mechanical polishing of the abnormal area 102 is Y22; in the step of forming the initial material layer, when the first pressure of the vacuum pipeline is 5.5 Torr-6.0 Torr, the pressure parameter for chemical mechanical polishing of the abnormal area 102 is Y2 3; In the step of forming the initial material layer, when the first pressure of the vacuum pipeline is 6.0Torr-6.5Torr, the pressure parameter for chemical mechanical polishing of the abnormal area 102 is Y24; the greater the first pressure of the vacuum pipeline, the worse the heat conduction, and the more obvious the thickness abnormality of the initial material layer in the abnormal area 102 compared with the second test area 106, and the faster the chemical mechanical polishing speed of the initial material layer in the abnormal area 102 is, and the speed of chemical mechanical polishing increases with the increase of the pressure parameter. Therefore, in order to achieve the purpose of defect improvement, Y24≥Y23≥Y22≥Y21.

[0102] In one of the embodiments, the method for preparing a semiconductor device further includes: adjusting the pressure of a vacuum line connected to the adsorption hole according to the parameter information. By adjusting the pressure of the vacuum line, the thickness of the initial material layer of the abnormal area subsequently formed by the deposition chamber can be adjusted, so as to avoid that the thickness of the initial material layer of the abnormal area is too large after the initial material layer is subsequently formed by the deposition chamber, thereby obtaining a substrate with an initial material layer having good film thickness uniformity, reducing the frequency of adjusting the first grinding parameter of chemical mechanical grinding of the initial material layer of the abnormal area, and simplifying the process steps.

[0103] In some embodiments, through Advanced Process Control (APC), the first grinding parameters and the pressure of the vacuum line for chemical mechanical grinding of the initial material layer in the abnormal area are adjusted according to the parameter information, so as to timely and effectively avoid the generation of defects.

[0104] It should be understood that, although the various steps in the flowchart of FIG. 1 are shown in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps is not strictly limited in order, and these steps can be executed in other orders. Moreover, at least a part of the steps in FIG. 1 may include a plurality of sub-steps or a plurality of stages, and these sub-steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these sub-steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the sub-steps or stages of other steps.

[0105] Figure 4 is a schematic diagram of the structure of a semiconductor device in some embodiments, such as Figure 4 As shown, in this embodiment, a semiconductor device is provided, including a deposition chamber 302, a vacuum pipeline 304, a control device 306 and a first vacuum pump 308; a plurality of carriers 402 are arranged in the deposition chamber 302, and a plurality of adsorption holes 404 are opened on the carrier 402, and the carrier 402 is used to carry and transfer heat to a substrate 406 located on the carrier 402, and the deposition chamber 302 is used to form an initial material layer, and the initial material layer includes an abnormal area, and the positive projection of the adsorption holes 404 on the substrate is located in the abnormal area; the vacuum pipeline 304 is arranged corresponding to the carrier 402, and is connected to the adsorption holes 404 opened in the carrier 402. 04 is connected; a first vacuum pump 308 is arranged corresponding to the deposition chamber 302, and is respectively connected to the vacuum pipeline 304 corresponding to each of the supporting platforms 402 in the deposition chamber 302, so as to extract the gas of the vacuum pipeline 304 connected thereto; the control device 306 is used to generate a first control signal according to the parameter information corresponding to the initial material layer of the abnormal area of ​​the preset substrate, and the first control signal is used to control the speed of the first vacuum pump 308 to extract the gas of the vacuum pipeline 304 corresponding to the preset supporting platform to adjust the pressure thereof; wherein, the preset substrate is located on the preset supporting platform during the process of forming the initial material layer, and the parameter information is used to characterize the thickness of the initial material layer.

[0106] For example, Figure 4As shown, two carriers 402 are provided in the deposition chamber 302. After the substrate 406 is placed on the carrier 402, the substrate 406 is adsorbed on the carrier 402 by changing the pressure of the vacuum line 304 corresponding to the carrier 402 where the substrate 406 is located. The deposition chamber 302 is used to form an initial material layer. In the process step of forming the initial material layer, a preset substrate is adsorbed on a preset carrier in the deposition chamber 302. The preset carrier transfers heat to a preset substrate located on the preset carrier, and an initial material layer is formed on the preset substrate through the deposition chamber 302.

[0107] The preset substrate is located on the preset supporting platform. By changing the pressure of the vacuum pipeline 304 corresponding to the preset supporting platform, the preset substrate is adsorbed on the preset supporting platform. The pressure of the vacuum pipeline 304 will affect the projection area of ​​the adsorption hole 404 on the preset substrate, and the thickness of the initial material layer formed in the area on the preset substrate with a certain distance from the projection area. These areas are collectively referred to as abnormal areas. Then, the initial material layer is formed on the surface of the preset substrate, and the initial material layer includes the abnormal area. The projection of the adsorption hole 404 in the preset supporting platform on the preset substrate is located in the abnormal area.

[0108] By controlling the speed at which the first vacuum pump 308 extracts gas from the vacuum pipeline 304 connected thereto, the pressure in the vacuum pipeline 304 connected to the first vacuum pump 308 can be adjusted to achieve the adjustment of the uniformity of the initial material layer. Increasing the pressure in the vacuum pipeline 304 can increase the thickness of the initial material layer in the abnormal area, and reducing the pressure in the vacuum pipeline 304 can reduce the thickness of the initial material layer in the abnormal area.

[0109] It is understandable that when the vacuum line 304 is connected to the first vacuum pump 308 , the pressure of the vacuum line 304 decreases as the speed at which the first vacuum pump 308 extracts gas from the vacuum line 304 (the suction force of the first vacuum pump 308 extracting gas from the vacuum line 304 ) increases.

[0110] The control device 306 generates a first control signal for adjusting the pressure of the vacuum pipeline 304 corresponding to the preset supporting platform according to the parameter information corresponding to the initial material layer in the abnormal area of ​​the preset substrate, thereby improving the thickness of the initial material layer in the adsorption area, and improving the uniformity of the thickness of the initial material layer subsequently formed on the preset substrate located on the preset substrate without replacing the supporting platform or cleaning the vacuum pipeline, thereby avoiding the residue of the initial material layer after chemical mechanical grinding of the initial material layer on the preset substrate.

[0111] In the above-mentioned semiconductor equipment, the control device 306 generates a first control signal according to parameter information characterizing the thickness of the initial material layer in the abnormal area on the surface of the preset substrate, controls the speed at which the first vacuum pump extracts the gas from the vacuum pipeline corresponding to the preset carrier, thereby adjusting the pressure of the vacuum pipeline 304 corresponding to the preset carrier where the preset substrate is located during the formation of the initial material layer, avoiding abnormal film thickness of the initial material layer in the abnormal area on the surface of the preset substrate corresponding to the preset carrier, thereby improving the utilization rate of the semiconductor equipment, reducing the maintenance cost of the semiconductor equipment, and improving the yield of semiconductor devices prepared using the semiconductor equipment.

[0112] like Figure 4 As shown, each vacuum pipeline 304 corresponding to each carrier 402 in the deposition chamber 302 is connected to the first vacuum pump 308 through the vacuum main line, and the semiconductor device further includes a first communication control valve 310, which is arranged corresponding to the vacuum pipeline 304 and is used to control the connection and disconnection between the corresponding vacuum pipeline 304 and the vacuum main line. Exemplarily, when the first communication control valve 310 corresponding to the vacuum pipeline 304 is opened, the vacuum pipeline 304 is connected to the vacuum main line; when the first communication control valve 310 corresponding to the vacuum pipeline 304 is closed, the vacuum pipeline 304 is disconnected from the vacuum main line.

[0113] like Figure 4 As shown, in some embodiments, the semiconductor device further includes a vacuum valve 312, which is arranged corresponding to the vacuum main line and is used to control the connection and disconnection between the vacuum main line and the first vacuum pump 308. Exemplarily, when the vacuum valve 312 is opened, the vacuum main line is connected to the first vacuum pump 308, and the gas of the vacuum line 304 connected to the vacuum main line can be extracted through the first vacuum pump 308; when the vacuum valve 312 is closed, the vacuum main line is disconnected from the first vacuum pump 308, and the gas of the vacuum line 304 connected to the vacuum main line cannot be extracted through the first vacuum pump 308.

[0114] Exemplarily, a preset substrate is placed on the surface of a preset carrier platform in a preset deposition chamber, a preset vacuum pipeline corresponds to the preset carrier platform, a preset first connecting control valve is arranged corresponding to the preset vacuum pipeline, and the connection and disconnection between the vacuum main pipeline corresponding to the preset deposition chamber and the first vacuum pump 308 are controlled by the preset vacuum valve; when the preset first connecting control valve and the preset vacuum valve are opened, the preset vacuum pipeline is connected to the first vacuum pump 308, and the first vacuum pump 308 controls the pressure in the preset vacuum pipeline by extracting gas in the preset vacuum pipeline, thereby adsorbing the preset substrate on the preset carrier platform.

[0115] like Figure 4As shown, in some embodiments, the semiconductor device further includes a chamber vacuum line 314, which is arranged corresponding to the deposition chamber 302 and communicated with the deposition chamber 302, and the pressure of the chamber vacuum line 314 is the same as the chamber pressure in the deposition chamber 302. The first vacuum pump 308 is also connected to the chamber vacuum line 314, and when the chamber vacuum line 314 (the deposition chamber 302) is communicated with the first vacuum pump 308, the gas in the deposition chamber 302 is extracted, thereby controlling the chamber pressure in the deposition chamber 302. When one first vacuum pump 308 is used to extract the gas in the vacuum line 304 and the deposition chamber 302, the number of vacuum pumps can be reduced, thereby reducing the cost of the semiconductor device.

[0116] like Figure 4 As shown, in some embodiments, the semiconductor device further includes an isolation valve 316, which is disposed corresponding to the chamber vacuum line 314 and is used to control the connection and isolation between the chamber vacuum line 314 and the first vacuum pump 308. Exemplarily, when the isolation valve 316 is opened, the chamber vacuum line 314 is connected to the first vacuum pump 308, and the gas in the deposition chamber 302 is extracted by the first vacuum pump 308 to control the chamber pressure in the deposition chamber 302; when the isolation valve 316 is closed, the chamber vacuum line 314 is isolated from the first vacuum pump 308.

[0117] like Figure 4 As shown, in some embodiments, the semiconductor device further includes a second communication control valve 318 , which is disposed corresponding to the vacuum main line and is used to control the communication and isolation between the vacuum main line and the chamber vacuum line 314 .

[0118] Illustratively, when the second connecting control valve 318 is opened, the vacuum main line is connected to the chamber vacuum line 314, the pressure of the vacuum main line is the same as the chamber pressure in the deposition chamber 302, a preset substrate is placed on the carrier 402 corresponding to the vacuum line 304 connected to the vacuum main line, the pressure in the vacuum line 304 connected to the vacuum main line is the same as the chamber pressure in the deposition chamber 302, so that the front and back sides of the preset substrate that are relatively set are subjected to the same pressure, the pressure on the back side of the preset substrate is relieved, and the preset substrate on the preset carrier is released; when the second connecting control valve 318 is closed, the vacuum main line is isolated from the chamber vacuum line 314, at this time, the vacuum valve 312 can be opened to connect the vacuum main line to the first vacuum pump 308.

[0119] Exemplarily, the second communication control valve 318 and the vacuum valve 312 have opposite states, including open and closed.

[0120] Figure 5 is a schematic diagram of the structure of a semiconductor device in some embodiments, such as Figure 5 As shown, in one embodiment, the semiconductor device further includes a regulating valve 320, which is arranged corresponding to the vacuum pipeline 304 and is used to adjust the aperture of the gas flow in the corresponding vacuum pipeline 304 according to the first control signal; wherein the size of the regulating valve 320 is the same as the aperture of the corresponding vacuum pipeline 304, and the same here means that the size of the regulating valve 320 satisfies that the aperture of the gas flow in the corresponding vacuum pipeline 304 can be adjusted by the regulating valve 320. Exemplarily, the regulating valve 320 includes a quarter-inch needle valve. By adjusting the aperture of the gas flow in the preset vacuum pipeline in the vacuum pipeline 304, the flux of the preset vacuum pipeline can be adjusted, and then the speed of the first vacuum pump 308 extracting the gas from the preset vacuum pipeline can be adjusted, so as to achieve the purpose of adjusting the pressure of the preset vacuum pipeline and the purpose of adjusting the uniformity of the initial material layer on the surface of the substrate formed on the carrier 402 corresponding to the preset vacuum pipeline.

[0121] It is understandable that after increasing the flux of the vacuum pipeline 304, the gas in the vacuum pipeline 304 is more easily pumped out, and the pressure of the vacuum pipeline 304 will be reduced when the pumping speed of the first vacuum pump 308 remains unchanged; after reducing the flux of the vacuum pipeline 304, the difficulty of pumping out the gas in the vacuum pipeline 304 increases, and the pressure of the vacuum pipeline 304 will be increased when the pumping speed of the first vacuum pump 308 remains unchanged. Exemplarily, reducing the pressure of the vacuum pipeline 304 improves heat conduction and increases the uniformity of the initial material layer on the surface of the substrate formed on the carrier 402 corresponding to the vacuum pipeline 304; increasing the pressure of the vacuum pipeline 304 deteriorates heat conduction and reduces the uniformity of the initial material layer on the surface of the substrate formed on the carrier 402 corresponding to the vacuum pipeline 304.

[0122] In some embodiments, different carriers 402 in the same deposition chamber 302 correspond to different regulating valves 320; when the regulating valve 320 adjusts the aperture of the gas flow in the vacuum pipeline 304 corresponding to the regulating valve 320 according to the first control signal, the pressure in the vacuum pipeline 304 corresponding to other carriers 402 in the same deposition chamber 302 will change, so that the deviation between the pressures in the vacuum pipeline 304 corresponding to different carriers 402 in the same deposition chamber 302 becomes smaller, and when initial material layers are formed on different substrate surfaces on different carriers 402 in the same deposition chamber 302, the deviation between the film thicknesses of the initial material layers on different substrate surfaces is reduced, thereby reducing the difference in film thicknesses between different substrates.

[0123] Exemplarily, assuming that a carrier platform A1 and a carrier platform A2 are provided in the deposition chamber 302, the vacuum pipeline B1 is connected to the adsorption hole 404 in the carrier platform A1, and the vacuum pipeline B2 is connected to the adsorption hole 404 in the carrier platform A2. When the sum of the pressures of the vacuum pipeline B1 and the vacuum pipeline B2 remains unchanged, the regulating valve 320 corresponding to the vacuum pipeline B1 can be adjusted to adjust the pressure of the vacuum pipeline B2. For example, when the pressure of the vacuum pipeline B1 is increased, the pressure of the vacuum pipeline B2 will decrease, thereby achieving the matching of the pressure of the vacuum pipeline B1 and the pressure of the vacuum pipeline B2, reducing the difference between the two, and reducing the thickness difference between the initial material layers formed on the surfaces of the substrates located on the carrier platforms A1 and A2.

[0124] In one embodiment, a plurality of carriers 402 are provided in the deposition chamber 302, and a plurality of substrates are respectively provided corresponding to the plurality of carriers 402, and the control device 306 is further used to generate a second control signal according to parameter information corresponding to the initial material layer of the abnormal area on the surfaces of the plurality of substrates; wherein the second control signal is used to control the first vacuum pump 308 to extract and adjust the speed of the gas in the vacuum pipeline 304 corresponding to the plurality of carriers 402, so that the pressures of the vacuum pipelines 304 corresponding to different carriers 402 are the same, thereby achieving pressure matching between the vacuum pipelines 304 corresponding to different carriers 402 in the same deposition chamber 302, and reducing the difference in film thickness of the initial material layers on the plurality of substrates respectively provided corresponding to the plurality of carriers 402 in the same deposition chamber 302.

[0125] The same pressure means that the difference between the pressures in the vacuum pipeline 304 corresponding to different carriers 402 in the same deposition chamber 302 is less than or equal to the pressure deviation. The pressure deviation refers to the maximum difference in the pressures of the vacuum pipeline 304 corresponding to the initial material layer when the defects caused by the film thickness deviation between the initial material layers of different film thicknesses are acceptable.

[0126] like Figure 5 As shown, in one embodiment, a plurality of carriers 402 are arranged in the deposition chamber, and the semiconductor equipment further includes a testing device 322; the testing device 322 is arranged corresponding to the deposition chamber 302, and is used to detect the pressure in the vacuum pipeline 304 corresponding to the plurality of carriers 402 in the deposition chamber 302, and generate a plurality of pressure detection signals; wherein the plurality of pressure detection signals correspond to the plurality of carriers 402 respectively, and the control device 306 is further used to generate the first control signal according to the pressure detection signal corresponding to the preset carrier; the pressure of the vacuum pipeline 304 is detected by the testing device 322, thereby improving the efficiency and accuracy of adjusting the pressure of the vacuum pipeline 304 corresponding to the preset carrier.

[0127] like Figure 5As shown, in some embodiments, the test device 322 includes a plurality of first test modules 408, and the plurality of first test modules 408 and the vacuum pipelines 304 corresponding to the plurality of carriers 402 are respectively set correspondingly, and the first test modules 408 are used to measure the pressure of the corresponding vacuum pipeline 304. The pressure of the vacuum pipeline 304 can be measured by the first test module 408, and the pressure of each vacuum pipeline 304 can be detected simultaneously, thereby improving the efficiency of adjusting the pressure of the vacuum pipeline 304 corresponding to the plurality of preset carriers according to the first control signal. Exemplarily, the first test module 408 includes a pressure detector.

[0128] like Figure 5 As shown, in some embodiments, the testing device 322 further includes a second testing module 410, which is arranged corresponding to the vacuum main line. The pressure of the vacuum main line can be measured by the second testing module 410, and the pressure of the plurality of vacuum lines 304 corresponding to the deposition chamber 302 and connected to the vacuum main line can be obtained by the second testing module 410, so as to further determine the pressure and eliminate the influence of the abnormality of the first testing module 408 on the pressure measurement. Exemplarily, the second testing module 410 includes a pressure detector.

[0129] Figure 6 is a schematic diagram of the structure of a semiconductor device in some embodiments, such as Figure 6 As shown, in one embodiment, the semiconductor device further includes a second vacuum pump 324, which is disposed corresponding to the deposition chamber 302 and docked with the chamber vacuum line 314, and is used to extract the gas in the deposition chamber 302 when the deposition chamber 302 is connected to the second vacuum pump 324. By separating the vacuum line 304 from the vacuum pump corresponding to the deposition chamber 302, dust in the deposition chamber 302 can be prevented from contaminating the vacuum line, the frequency of adjusting the pressure of the vacuum line 304 can be reduced, and the utilization rate of the semiconductor device can be improved.

[0130] Exemplarily, the range of the first test module 408 and the second test module 410 is greater than 0 and less than or equal to a preset pressure; the preset pressure is the maximum pressure in the vacuum pipeline 304 when each vacuum pipeline 304 corresponding to the deposition chamber 302 is connected to the vacuum pump and the vacuum pump does not extract the gas in the vacuum pipeline 304. Further, when the vacuum pump extracts air to make the vacuum pipeline 304 close to vacuum, the pressure in the vacuum pipeline 304 is 6Torr, and the preset pressure is 600Torr.

[0131] It is understandable that the isolation valve 316 is provided corresponding to the chamber vacuum line 314, and is used to control the connection and isolation between the chamber vacuum line 314 and the second vacuum pump 324. Exemplarily, when the isolation valve 316 is opened, the chamber vacuum line 316 is connected to the second vacuum pump 324, and the gas in the deposition chamber 302 is extracted by the second vacuum pump 324 to control the chamber pressure in the deposition chamber 302; when the isolation valve 316 is closed, the chamber vacuum line 316 is isolated from the second vacuum pump 324. By providing different vacuum pumps to extract the gas from the vacuum line 304 and the deposition chamber 302 respectively, it is convenient to control the pressure of the vacuum line 304, avoid the contamination of the inside of the vacuum line 304 by the contamination in the deposition chamber 302, reduce the accumulation of dust in the vacuum line 304, reduce the frequency of adjusting the pressure of the vacuum line 304, and improve the utilization rate of semiconductor equipment.

[0132] like Figure 6 As shown, in one embodiment, the semiconductor device further includes a gas pipeline 326, and the gas pipeline 326 is used to pass gas into each of the vacuum pipelines 304 corresponding to the deposition chamber 302 to increase the pressure of the vacuum pipeline 304. The pressure of the vacuum pipeline 304 can be increased by the gas pipeline 326, so that the pressure of the vacuum pipeline 304 is the same as the chamber pressure of the deposition chamber 302, thereby releasing the pressure on the back side of the substrate on the carrier 402. The gas pipeline 326 improves the balance efficiency of the pressure of the vacuum pipeline 304 and the chamber pressure of the deposition chamber 302, shortens the process time, and improves the utilization rate of the semiconductor device.

[0133] Furthermore, the gas pipeline 326 is connected to the vacuum main pipeline, and the gas enters the vacuum pipeline 304 from the gas pipeline through the vacuum main pipeline. Exemplarily, the gas introduced into the gas pipeline 326 includes nitrogen, which is cheap, stable in activity, and easy to obtain.

[0134] In some embodiments, a semiconductor device is provided, which is manufactured using the above-mentioned method for manufacturing a semiconductor device; or is manufactured using the above-mentioned semiconductor equipment.

[0135] In some embodiments, an electronic device is provided, comprising the semiconductor device described above. The electronic device may include a smart phone, a computer, a tablet computer, an artificial intelligence, a wearable device, or a smart mobile terminal. The embodiments of the present application do not impose any special restrictions on the specific form of the electronic device described above.

[0136] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0137] The above-mentioned embodiments only express several implementation methods of the embodiments of the present disclosure, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the embodiments of the present disclosure, and these all belong to the protection scope of the embodiments of the present disclosure.

Claims

1. A method for preparing a semiconductor device, characterized in that: include: Placing the substrate on a carrier platform in a deposition chamber; the carrier platform is provided with a plurality of adsorption holes, and the carrier platform is used to carry and transfer heat to the substrate; forming an initial material layer on the surface of the substrate, wherein the initial material layer comprises an abnormal region, and the orthographic projection of the adsorption hole on the substrate is located in the abnormal region; confirming parameter information corresponding to the initial material layer of the abnormal area, wherein the parameter information is used to characterize the thickness of the initial material layer; According to the parameter information, a first polishing parameter for chemical mechanical polishing of the initial material layer in the abnormal area is adjusted.

2. The method for preparing a semiconductor device according to claim 1, wherein: The initial material layer includes a first test area surrounding the center of the substrate, the abnormal area is located in the first test area, and the parameter information corresponding to the initial material layer of the abnormal area is confirmed, including: A plurality of first measurement points are selected in the first test area; the distance between the first measurement point and the center of the circle is equal to a preset value, and the plurality of first measurement points are evenly arranged along the circumference of the first test area, and the preset value is the distance between the center point of the orthographic projection of the adsorption hole on the substrate and the center of the circle; measuring and obtaining a first intermediate thickness of the initial material layer corresponding to each of the first measuring points; The first thickness of the initial material layer is obtained according to the first intermediate thickness corresponding to each of the first measurement points, and the first thickness is used as the parameter information.

3. The method for preparing a semiconductor device according to claim 2, characterized in that: There is at least one first measurement point whose distance between the orthographic projection on the support platform and the adjacent adsorption hole is less than or equal to a preset distance, and the preset distance is the maximum distance between the orthographic projection of the adsorption hole on the substrate and the edge of the abnormal area.

4. The method for preparing a semiconductor device according to claim 2, characterized in that: The initial material layer further includes a plurality of second test areas surrounding the center of the circle, and the first test area is adjacent to at least one of the second test areas; the method for preparing the semiconductor device further includes: determining a second thickness of the initial material layer at each of the second test areas; adjusting a second polishing parameter for chemical mechanical polishing of the initial material layer of each second test area according to the second thickness of each second test area; The plurality of second test areas are arranged along the radius of the substrate, and the number of second measurement points corresponding to the second test areas close to the center of the circle is less than the number of second measurement points corresponding to the second test areas far from the center of the circle.

5. The method for preparing a semiconductor device according to claim 1, characterized in that: The step of confirming parameter information corresponding to the initial material layer of the abnormal area comprises: In the step of depositing and forming the initial material layer, a first pressure of a vacuum line connected to the adsorption hole is measured and obtained, and the first pressure is used as the parameter information.

6. The method for preparing a semiconductor device according to any one of claims 1 to 5, characterized in that: The method for preparing the semiconductor device further includes: According to the parameter information, the pressure of the vacuum pipeline connected to the adsorption hole is adjusted.

7. A semiconductor device, characterized in that: include: A deposition chamber, wherein a plurality of carriers are arranged in the deposition chamber, a plurality of adsorption holes are opened on the carriers, the carriers are used to carry and transfer heat to the substrate, the deposition chamber is used to form an initial material layer, the initial material layer includes an abnormal area, and the orthographic projection of the adsorption holes on the substrate is located in the abnormal area; A vacuum pipeline is arranged corresponding to the carrying platform and is connected to the adsorption hole opened in the carrying platform; A first vacuum pump is disposed corresponding to the deposition chamber and is respectively connected to the vacuum pipeline corresponding to each of the supporting platforms in the deposition chamber to extract gas from the vacuum pipeline connected thereto; A control device, for generating a first control signal according to parameter information corresponding to the initial material layer of the abnormal area of ​​the preset substrate, wherein the first control signal is used to control the speed at which the first vacuum pump extracts gas from the vacuum pipeline corresponding to the preset carrier to adjust its pressure; Wherein, during the process of forming the initial material layer, the preset substrate is located on the preset supporting platform, and the parameter information is used to characterize the thickness of the initial material layer.

8. The semiconductor device according to claim 7, wherein: Semiconductor equipment also includes: a regulating valve, arranged corresponding to the vacuum pipeline, and used for adjusting the aperture of the gas flow in the corresponding vacuum pipeline according to the first control signal; Wherein, the size of the regulating valve is the same as the aperture of the corresponding vacuum pipeline.

9. The semiconductor device according to claim 7, wherein: The semiconductor device further comprises: a chamber vacuum pipeline, communicating with the deposition chamber; Wherein, the first vacuum pump is also connected to the chamber vacuum pipeline, and when the chamber vacuum pipeline is connected to the first vacuum pump, the gas in the deposition chamber is extracted; or the semiconductor device also includes: a second vacuum pump, which is connected to the chamber vacuum pipeline, and when the chamber vacuum pipeline is connected to the second vacuum pump, the gas in the deposition chamber is extracted.

10. The semiconductor device according to claim 7, wherein: A plurality of carriers are arranged in the deposition chamber, and the semiconductor device further comprises: A testing device, arranged corresponding to the deposition chamber, for detecting the pressure in the vacuum pipeline corresponding to a plurality of carriers in the deposition chamber, and generating a plurality of pressure detection signals; Among them, multiple pressure detection signals correspond to multiple support platforms respectively, and the control device is also used to generate the first control signal according to the pressure detection signal corresponding to the preset support platform.

11. The semiconductor device according to claim 10, characterized in that The testing device comprises: Multiple first test modules, multiple first test modules and multiple vacuum pipelines corresponding to the support platforms are respectively arranged correspondingly, and the first test modules are used to measure the pressure of the corresponding vacuum pipelines.

12. The semiconductor device according to claim 7, wherein: Semiconductor equipment also includes: The gas pipeline is used to introduce gas into each of the vacuum pipelines corresponding to the deposition chamber to increase the pressure of the vacuum pipeline.

13. The semiconductor device according to claim 7, wherein: The deposition chamber is provided with a plurality of carriers, and the plurality of substrates are respectively provided corresponding to the plurality of carriers. The control device is further used to generate a second control signal according to parameter information corresponding to the initial material layer of the abnormal area on the surface of the plurality of substrates; The second control signal is used to control the speed at which the first vacuum pump extracts gas from the vacuum pipelines corresponding to the plurality of carriers, so that the pressures of the vacuum pipelines corresponding to different carriers are the same.

14. A semiconductor device, characterized in that: It is manufactured by the method for preparing a semiconductor device according to any one of claims 1 to 6; or it is manufactured by the semiconductor device according to any one of claims 7 to 13.

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