Substrate / wafer processing device and processing method

Abstract

The invention relates to a substrate / wafer processing device and method, and the substrate / wafer processing device is located in a clean processing chamber. Comprising a substrate sublimation drying processing unit, a wafer rotating base device and a liquid nozzle unit, and the substrate sublimation drying processing unit is a porous tubular air extractor and / or a porous tubular air blowing device or a porous guide plate sublimation drying processing device; the processing device is provided with the substrate sublimation drying processing unit, so that uniform air exhaust and / or uniform air blowing processing is carried out on the surface of the wafer, uniform curing of a processing liquid film on the surface of the wafer and uniform sublimation of a cured film are realized, and pattern lodging caused by uneven stress action such as liquid surface tension in a local area is avoided; therefore, the yield of products is improved, the integrated processing of substrate / wafer cleaning and sublimation drying is realized, the process can be effectively simplified, the productivity can be improved, and the complexity of the process flow and the reduction of the productivity caused by the independent cleaning chamber and drying chamber are avoided.

Description

Technical Field

[0001] The present invention relates to the technical field of integrated circuit manufacturing industry, and in particular to a substrate / wafer processing device and a processing method. Background Art

[0002] In the manufacturing process of semiconductor wafers and other substrates, it is usually necessary to undergo wet cleaning and other treatment processes on the substrate surface to remove impurity particles, polymer residues or metal ions and other contaminants on the wafer surface. During the drying step of wet cleaning, the graphic structure with high aspect ratio, refinement, multi-layer and other characteristics on the wafer surface may fall over and be damaged due to the uneven effect of local stress, such as uneven surface tension of the liquid, thus affecting the performance and yield of the device.

[0003] In order to prevent the above-mentioned lodging of wafer surface patterns, technologies such as surface modification, IPA (isopropyl alcohol) drying, and Marangoni drying have been developed to reduce the effect of liquid surface tension on patterns. However, these technologies cannot meet the drying requirements of high aspect ratio and fragile fine patterns in advanced processes. The most cutting-edge drying technology also includes supercritical carbon dioxide drying technology, which can achieve non-lodging drying of wafer surface patterns in advanced processes, but the cost of this technology and related equipment is very high and the production capacity is low.

[0004] The schematic diagram of the sublimation drying process is as follows Figure 1 As shown, by selecting specific chemicals (chemical monomers or chemical mixtures) to replace the isopropyl alcohol (IPA) liquid film on the wafer surface in liquid form, and the freezing point of the chemicals is generally near room temperature. After the replacement of the chemicals and the formation of the chemical liquid film, the chemical liquid film is condensed into a solidified film by cooling and other methods. Finally, the solidified film is sublimated by precise control of the rotation speed, moderate heating, nitrogen purging or exhaust, so that the chemical solidified film covering the wafer surface is directly converted from solid to gas and detached from the wafer surface. This technology can effectively avoid the conversion process from liquid to gas on the wafer surface, as well as the surface tension effect and the pattern lodging on the wafer surface caused by it. Compared with supercritical processing technology, this method is simpler, less expensive, and has higher production capacity.

[0005] In order to solve the problem that the microscopic patterns on the surface of the substrate may collapse and be damaged due to the surface tension of the liquid during the drying process of wet cleaning, sublimation drying technology is currently used to remove the liquid on the surface of the substrate and dry the substrate.

[0006] DNS-US11851745B2 and DNS-CN116825612A use a two-in-one chemical cleaning processing chamber for cleaning and drying, integrating the chemical cleaning and sublimation drying functions of the wafer. The processing chamber is mainly composed of components such as a wafer chuck (with a rotating base), a guide wall, a chemical liquid nozzle, and a lifting shielding plate (with a central nozzle). Among them, the wafer chuck is used to fix the wafer, and the rotating base at the bottom is used to drive the wafer to rotate; the guide wall is used to collect the processing liquid or the cleaning liquid; the chemical liquid nozzle is used to spray the chemical liquid onto the wafer surface; the central nozzle of the shielding plate is used to spray the processing liquid onto the wafer surface; the shielding plate is used to protect the area between the shielding plate and the wafer below to prevent oxidation of the wafer surface and liquid backsplashing. However, for such a processing chamber design, the hardware structure is extremely complex, especially the lifting shielding plate component. The lifting shield plate needs to meet the following requirements: 1. It can be lifted and lowered according to different process requirements so that the shield plate is at a suitable height; 2. It can rotate at the same speed as the wafer under the shield plate, so as to prevent the liquid from splashing back onto the wafer surface as much as possible. Splashing back may cause contamination or defects on the wafer surface; 3. In addition to spraying the processing liquid, it can also introduce inactive gases such as nitrogen (N2) to the wafer surface to promote the volatilization of the processing liquid, the sublimation of the cured film, and protect the area between the shield plate and the wafer below. In order to meet the above goals, it is necessary to set up many complex mechanical and hardware structures such as lifting devices, rotating devices, liquid nozzles and pipelines, gas nozzles and pipelines for the shield plate. The integration of too much hardware and functions also puts high demands on the control system. In general, the shield plate has a complex structure, is difficult to process, and has strict requirements on the control system.

[0007] Although DNS-US10651058 does not use a shielding plate design, it requires the establishment of independent cleaning and drying chambers for chemical cleaning and sublimation drying of wafers, respectively. This solution requires the establishment of a separate drying chamber, resulting in a large footprint and more complex layout of the entire equipment. In addition, since the cleaned wafers need to be transferred to the drying chamber via a robot or other sample transfer device, the equipment's production capacity will also be severely reduced.

[0008] TEL-JP2011343869A and TEL-JP2015149410A use a method of exhausting air from the wafer surface to assist in removing volatile products after the solidified film on the wafer surface sublimates. Although this exhaust method sets up an air hood covering the wafer surface, the air holes for exhausting air are only concentrated in the center of the air hood, that is, the center area of ​​the wafer. This may cause the center area of ​​the wafer to be more affected by the airflow, and the solid film in the center area of ​​the wafer sublimates prematurely, resulting in uneven stress on the wafer surface pattern and lodging and damage of local patterns on the wafer surface, such as Figure 2In addition, in this solution, heat is transferred by the heating wire set in the wafer chuck. Because the wafer chuck (and the heating wire) do not directly contact the wafer, the heat transfer by thermal radiation may result in uneven radiation temperature, causing the liquid in a local area of ​​the wafer surface to evaporate prematurely or the solidified film to sublimate prematurely, thereby causing the local pattern on the wafer surface to fall over and be damaged due to the uneven force. Summary of the invention

[0009] In order to solve the defects of the prior art, the purpose of the present invention is to provide a substrate / wafer processing device, which is provided with a substrate sublimation drying processing unit, so as to perform uniform vacuum and / or uniform blowing treatment on the wafer surface, so as to achieve uniform solidification of the processing liquid film on the wafer surface and uniform sublimation of the solidified film, and avoid the collapse of the pattern due to uneven stress in local areas. The processing device is a wafer cleaning-drying two-in-one device. The substrate / wafer processing device is located in a clean room, and integrates the chemical cleaning and sublimation drying functions of the substrate.

[0010] In order to achieve the above purpose, the present invention adopts the following technical solutions:

[0011] A substrate / wafer processing device comprises a sublimation drying processing unit, a rotating base device 110, and a liquid nozzle unit 120; wherein the sublimation drying processing unit is a porous tubular exhaust device 130 and / or a porous tubular purge device 140.

[0012] The porous tubular exhaust device 130 includes a porous exhaust pipe 131, exhaust holes 131a, an exhaust pipeline 132, an exhaust switch valve 132a, an exhaust pipe lifting device 133 and an exhaust pipe vacuum exhaust device 134, wherein both ends of the porous exhaust pipe 131 are sealed, and a plurality of exhaust holes 131a are arranged on the side wall surface facing the substrate, 2-5 exhaust pipelines 132 are evenly arranged on the side wall surface of the porous exhaust pipe 131 facing away from the substrate, one end of the exhaust pipeline 132 is connected to the porous exhaust pipe 131, and the other end is connected to the exhaust pipe vacuum exhaust device 134 via the exhaust switch valve 132a, 2-3 exhaust pipe lifting devices 133 are evenly arranged on the porous exhaust pipe 131, and the exhaust pipe lifting device 133 can realize the lifting and lowering of the porous tubular exhaust device 130.

[0013] The porous air extraction pipe 131 is rod-shaped, annular or semi-annular, with a circular or square cross section; the cross-sectional area is 1-4 cm 2 , arranged on the side of the rotating base device 110.

[0014] The vacuum exhaust device 134 of the exhaust pipe is a vacuum pump, and may also be composed of components such as a vacuum generator, a vacuum valve, and a vacuum pipeline, as long as it can achieve a negative pressure exhaust effect lower than the ambient pressure.

[0015] The vacuum pipe lifting device 133 may be composed of a known lifting rod and a lifting motor or a lifting cylinder. The porous tubular purge device 140 includes a porous purge air pipe 141, a purge air hole 141a, a purge air supply pipeline 142, a purge air switch valve 142a, a purge air pipe lifting device 143 and a purge air supply source 144, wherein both ends of the porous purge air pipe 141 are sealed, a plurality of purge air holes 141a are evenly arranged on the side wall surface facing the substrate, and 2-5 purge air supply valves 142a are evenly arranged on the side wall surface of the porous purge air pipe 141 facing away from the substrate. Pipeline 142, one end of the purge gas supply pipeline 142 is connected to the porous purge gas pipe 141, and the other end is connected to the purge gas supply source 144 through the purge gas switch valve 142a. 2-3 purge gas pipe lifting devices 143 are evenly arranged on the porous purge gas pipe 141. The purge gas pipe lifting device 143 can realize the rise and fall of the porous tubular purge device 140; the purge gas pipe lifting device 143 can be composed of a known lifting rod and a lifting motor or a lifting cylinder. The porous purge gas pipe 141 is rod-shaped, circular or semicircular, with a circular or square cross section; the cross-sectional area is 1-4cm 2 , arranged on the side of the rotating base device 110.

[0016] The apertures of the exhaust hole 131a and the purge hole 141a are 0.1 to 3 mm, the purge gas is one or more of high-purity N2, helium, and argon, and the pressure of the purge gas is 0.12 to 0.6 MPa.

[0017] When the porous exhaust pipe 131 and / or the porous purge pipe 141 are rod-shaped, their lengths are equal to or slightly larger than the diameter of the substrate / wafer base 113, and the distances between the porous exhaust pipe 131 and the porous purge pipe 141 and the edge of the substrate / wafer base 113 are 10-100 mm.

[0018] Further, when the porous exhaust pipe 131 and / or the porous purge air pipe 141 are in a circular ring shape or a semi-circular ring shape, the diameter of the porous exhaust pipe 131 and / or the porous purge air pipe 141 is slightly larger than the diameter of the substrate / wafer base 113, and the difference between the diameter of the porous exhaust pipe 131 and / or the porous purge air pipe 141 and the diameter of the substrate / wafer base 113 is 10-100 mm, but is not limited to this.

[0019] The exhaust rate of the porous exhaust pipe 131 is 5 to 50 L / min, and the blowing rate of the porous purge air pipe 141 is 5 to 50 L / min.

[0020] Further, the sublimation drying treatment unit can also be a porous guide plate sublimation drying treatment device 230, which includes a porous guide plate 231, an air guide cover 232, an air guide pipeline 233, a switch valve 233a, and a guide plate vacuum exhaust device 234, wherein the porous guide plate 231 is connected to the bottom surface of the air guide cover 232, and the top of the air guide cover 232 is provided with an air outlet connected to the air guide pipeline 233, one end of the air guide pipeline 233 is connected to the air outlet provided on the top of the air guide cover 232, and the other end is connected to the guide plate vacuum exhaust device 234 through the switch valve 233a, and a plurality of vents 231a penetrating up and down in the vertical direction are evenly arranged on the porous guide plate 231; 2-3 air guide cover lifting devices 235 are evenly arranged on the upper wall of the air guide cover 232;

[0021] The porous guide plate 231 is circular or square, and is disposed directly above the rotating base device 110. The diameter of the vent holes 231a disposed thereon is 0.1-3 mm.

[0022] The porous guide plate sublimation drying treatment device 230 is lifted and lowered by the air guide cover lifting device 235. The lifting device can be composed of a known lifting rod and a lifting motor or a lifting cylinder. The porous guide plate sublimation drying treatment device 230 is placed at different heights during different processing steps. For example, when performing a chemical liquid spraying process, the porous guide plate sublimation drying treatment device 230 is lifted and lowered to a position higher than the surface of the substrate / wafer W and the liquid guide wall 112 to prevent interference. This position is called an avoidance position. When the porous guide plate sublimation drying treatment device 230 is in the avoidance position, the porous guide plate sublimation drying treatment device 230 is lifted and lowered to a position higher than the surface of the substrate / wafer W and the liquid guide wall 112 to prevent interference. When the porous guide plate 231 is in the processing position, the height of the lower surface of the porous guide plate 231 from the upper surface of the substrate / wafer W can be, for example, 10 to 30 cm; when performing the thinning and sublimation process of the liquid film, the air guide cover lifting device 235 is operated to adjust the porous guide plate sublimation drying treatment device 230 to descend, so that it is at a position slightly higher than the surface height of the substrate / wafer W, so as to achieve a uniform and effective exhaust effect. This position is called the processing position. When the porous guide plate sublimation drying treatment device 230 is in the processing position, the height of the lower surface of the porous guide plate 231 from the upper surface of the wafer can be, for example, 0.5 to 5 cm. The guide plate vacuum exhaust device 234 is a vacuum pump, and can also be composed of devices such as a vacuum generator, a vacuum valve, and a vacuum pipeline, as long as it can achieve a negative pressure exhaust effect lower than the ambient pressure.

[0023] The rotating base device 110 includes a fixed clamping pin 111 , a liquid guide wall 112 (cup), a substrate / wafer base 113 , a base rotating support rod 114 and a base rotating motor 115 .

[0024] The liquid guide wall 112 (cup) is a well-known component in the field of chemical cleaning machines. It is in the shape of an annular cup symmetrical about the central axis and can be raised and lowered along the periphery of the substrate / wafer base 113. It is used to collect liquid overflowed during liquid spraying or wafer rotation, and discharge the collected liquid out of the processing chamber through the guide holes and guide pipes arranged at the bottom of the liquid guide wall 112.

[0025] The substrate / wafer base 113 is the main body for carrying the substrate / wafer, and is disc-shaped or cylindrical as a whole. A through hole is provided in the center of the substrate / wafer base 113, and more than two fixing pins 111 are provided on its edge for fixing the substrate / wafer W. The substrate / wafer base 113 is connected to the base rotating motor 115 via the base rotating support rod 114. The substrate / wafer base 113 rotates under the control of the base rotating motor 115, thereby driving the substrate / wafer W carried by it to rotate.

[0026] A through hole through which a back spray pipeline 118 passes is provided in the center of the base rotating support rod 114 along the longitudinal axis direction. One end of the back spray pipeline 118 passes through the through hole inside the base rotating support rod 114 and the through hole in the center of the substrate / wafer base 113 and is connected to the nozzle 118a. The other end of the back spray pipeline 118 passes through the side wall of the base rotating support rod 114 and is connected to one end of the cold medium pipeline 116 and the hot medium pipeline 117 respectively through a three-way joint. The other end of the cold medium pipeline 116 is connected to the cold medium supply source through the cold medium switch valve 116a, and the other end of the hot medium pipeline 117 is connected to the hot medium supply source through the hot medium switch valve 117a; the cold medium or the hot medium is sprayed toward the back side of the wafer through the nozzle 118a of the back spray pipeline 118.

[0027] When the porous tubular exhaust device 130 rises to a height of 5 to 10 cm above the upper surface of the substrate / wafer base 113, this position is called the avoidance position. When the height of the porous exhaust pipe 131 is flush with or nearly flush with the upper surface of the substrate / wafer base 113, this position is called the processing position, and at this time, the height difference between the porous exhaust pipe 131 and the upper surface of the substrate / wafer base 113 is 0 to 1 cm.

[0028] When the porous tubular purge device 140 rises to a point where the height of the porous purge air pipe 141 is 5 to 10 cm higher than the upper surface of the substrate / wafer base 113, this position is called the avoidance position. When the height of the porous purge air pipe 141 is flush with or nearly flush with the upper surface of the substrate / wafer base 113, this position is called the processing position, and at this time, the height difference between the porous purge air pipe 141 and the upper surface of the substrate / wafer base 113 is 0 to 1 cm.

[0029] The liquid nozzle unit 120 includes a liquid nozzle device and a movable swing arm 129;

[0030] The liquid nozzle device is a multi-channel liquid nozzle, including a chemical liquid nozzle 121, an ultrapure water (DIW) nozzle 122, an IPA nozzle 123 and a treatment liquid nozzle 124.

[0031] The chemical liquid nozzle 121 is connected to the chemical liquid supply source through the chemical liquid pipeline 125 and the chemical liquid switch valve 125a, the ultrapure water nozzle 122 is connected to the ultrapure water supply source through the ultrapure water pipeline 126 and the ultrapure water switch valve 126a, the IPA nozzle 123 is connected to the IPA supply source through the IPA pipeline 127 and the IPA switch valve 127a, and the treatment liquid nozzle 124 is connected to the treatment liquid supply source through the treatment liquid pipeline 128 and the treatment liquid switch valve 128a.

[0032] One end of the movable swing arm 129 is connected to the side wall surface of the liquid nozzle device close to the chemical liquid nozzle 121, and the other end is connected to the driving control device in the processing chamber. The driving control device can be a well-known moving part such as a stepping motor and a cylinder.

[0033] The substrate sublimation drying processing unit is disposed on the side or above the rotating base device 110 and can move, and the liquid nozzle unit 120 is disposed on the side of the rotating base device 110 and can move to the top of the substrate / wafer base (113).

[0034] The cold medium and the hot medium are fluids that can be cooled and heated, such as one or more of ultrapure water, alcohol organic substances, inactive gases (such as nitrogen, helium, argon), etc. The temperature range of the cold medium is -20°C to 20°C, and the temperature range of the hot medium is 25°C to 70°C.

[0035] The present invention also provides a method for processing a substrate / wafer using the above substrate / wafer processing device. The process flow chart of the method is as follows: Figure 3 As shown, the method specifically comprises the following steps:

[0036] (1) A substrate / wafer W to be processed is introduced into the substrate / wafer base 113, and the substrate / wafer W is fixed by the fixing pins 111, and then the liquid guide wall 112 is raised;

[0037] (2) Liquid film forming step: Turn on the base rotating motor 115 to rotate the substrate / wafer W at a speed of 500 to 1500 rpm / min, move the liquid nozzle device to the top of the substrate / wafer W, spray the substrate / wafer W with chemical liquid, ultrapure water, IPA and treatment liquid in sequence, and form a treatment liquid film on the surface of the substrate / wafer W;

[0038] (3) Liquid film thinning process: achieved through the synergistic effect of the following three methods:

[0039] 3.1) The rotation speed of the base rotating motor 115 is adjusted to 1000-2000 rpm / min, and the processing liquid film on the surface of the substrate / wafer W is partially separated from the surface of the substrate / wafer W under the action of centrifugal force;

[0040] 3.2) Adjust the sublimation drying processing unit to the processing position, and perform uniform exhaust and / or purge processing on the area horizontal to or above the surface of the substrate / wafer W to promote the volatilization of the solvent in the processing liquid film and the thinning of the liquid film;

[0041] 3.3) Open the heat medium switch valve 117a to supply heat medium to the back of the substrate / wafer W. The supply flow rate of the heat medium can be 100-2000 mL / min to promote the volatilization of the solvent in the processing liquid film and the thinning of the liquid film;

[0042] (4) Liquid film solidification process: while keeping the operating states of 3.1) and 3.2) in step (3) unchanged, close the hot medium switch valve 117a, open the cold medium switch valve 116a, and supply cold medium to the back side of the substrate / wafer W. The supply flow rate of the cold medium can be 100 to 2000 mL / min, so as to evenly cool the substrate / wafer W, so that the processing liquid film on the surface of the substrate / wafer W is condensed and solidified to form a solidified film; in addition, the endothermic effect caused by the volatilization of the solvent in the processing liquid film will also promote the condensation and solidification process of the liquid film;

[0043] (5) Cured film sublimation process: The sublimation of the cured film is achieved through the synergistic effect of the following three methods;

[0044] 5.1) Adjust the rotation speed of the base rotation motor 115 to 1500-2500 rpm / min, and increase the gas flow rate difference between the solidified film on the surface of the substrate / wafer W and the upper environment area through the high-speed rotation of the substrate / wafer W, thereby promoting the sublimation process of the solidified film on the surface of the substrate / wafer W;

[0045] 5.2) Adjust the sublimation drying processing unit to the processing position, and perform uniform exhaust and / or purge processing on the area above the surface of the substrate / wafer W to promote the sublimation process of the cured film;

[0046] 5.3) Open the heat medium switch valve 117a to supply heat medium to the back of the substrate / wafer W. The supply flow rate of the heat medium can be 100-2000 mL / min to promote the sublimation process of the cured film. It is necessary to control the temperature and flow rate of the supplied heat medium so as not to cause liquefaction of the cured film.

[0047] (6) After the solidified film sublimation process is completed, the substrate / wafer W is transferred out, and the cleaning and sublimation drying process of the substrate / wafer W is completed.

[0048] According to the method, in step (2), a treatment liquid film containing a sublimable substance is sprayed on the surface of the wafer; wherein the chemical liquid in the chemical liquid spraying is one or more of 1% by volume dilute hydrofluoric acid (dilute-HF, dHF), SC-1, SC-2, etc.; the chemical liquid spraying time is 30 to 110 seconds (preferably 30 to 90 seconds); the ultrapure water spraying time is 10 to 60 seconds (preferably 10 to 30 seconds), the IPA spraying time is 10 to 60 seconds (preferably 10 to 40 seconds), and the treatment liquid spraying time is 10 to 90 seconds (preferably 30 to 80 seconds). The thickness of the treatment liquid film finally prepared is 0.1 to 1000 microns.

[0049] The treatment liquid is composed of a sublimable substance and an organic solvent, the mass proportion of the sublimable substance in the treatment liquid is 1% to 50%, the sublimable substance can be a substance with a freezing point near room temperature, selected from one or more of heptafluorocyclopentane, tert-butyl alcohol, cyclohexanone oxime, camphor, 1,3,5-trioxane, naphthalene, etc.; the organic solvent is a liquid with a higher vapor pressure than the sublimable substance, selected from one or more of isopropyl alcohol (IPA), methanol, ethanol, acetone, etc., and the vapor pressure of the organic solvent is higher than that of the sublimable substance.

[0050] The treatment liquid can be a mixed treatment liquid consisting of a sublimable substance and an organic solvent, or a mixed treatment liquid consisting of multiple sublimable substances and an organic solvent, or a mixed treatment liquid consisting of a sublimable substance and multiple organic solvents, or a mixed treatment liquid consisting of multiple sublimable substances and multiple organic solvents. In addition, a surfactant can be added to the mixed treatment liquid to promote the solidification process of the treatment liquid film and the sublimation process of the solidified film.

[0051] In step (5), the temperature of the heat medium supplied to the back side of the substrate / wafer W is not higher than the melting point of the sublimable substance in the processing liquid.

[0052] In one embodiment of the present invention, a porous tubular exhaust device is arranged in the horizontal direction of the substrate / wafer to achieve uniform exhaust treatment on the surface of the substrate / wafer, so that the processing liquid film on the surface of the substrate / wafer is thinned, uniformly solidified, and the solidified film is uniformly sublimated.

[0053] Uniform exhaust treatment means that the exhaust effect (exhaust rate, partial pressure, etc.) is the same in all areas above the substrate / wafer surface. The exhaust process helps to promote the volatilization of the processing liquid by reducing the partial pressure of sublimable substances and organic solvents in the area above the substrate / wafer surface, thereby thinning the liquid film and reducing the processing liquid film to a suitable and uniform thickness.

[0054] In addition, during the liquid film thinning step of the substrate processing process, the substrate / wafer is rotated (spin) to use the centrifugal force to separate part of the processing liquid from the wafer surface, thereby achieving the purpose of thinning the liquid film.

[0055] Furthermore, the substrate / wafer can be appropriately heated in the liquid film thinning step of the substrate processing process, and the temperature can be used to promote the volatilization of the substrate / wafer surface treatment liquid to achieve thinning of the liquid film. Specifically, the substrate / wafer heating treatment can be achieved by back-spraying a heat medium on the bottom of the substrate / wafer. When back-spraying the heat medium, the substrate / wafer is rotated at a certain speed, so that the heat medium on the back of the substrate / wafer is evenly covered on the back of the wafer under the action of centrifugal force, achieving a uniform heat transfer treatment effect.

[0056] The thinned liquid film is conducive to the subsequent formation of a solidified film of appropriate thickness. If the solidified film is thicker, the sublimation process may take a long time, resulting in reduced production capacity and increased energy consumption.

[0057] After forming a uniform treatment liquid film with appropriate thickness, the liquid film solidification process begins, and the treatment liquid film on the substrate / wafer surface is further evacuated through a porous tubular exhaust device arranged in the horizontal direction of the substrate / wafer. Since the vapor pressure of the organic solvent in the treatment liquid is higher than that of the sublimable substance, the volatilization of the organic solvent will be more intense. When the volatilization of the organic solvent reaches a certain level, that is, when the proportion of the sublimable substance in the mixed treatment liquid increases to a certain level, the treatment liquid film on the substrate / wafer surface begins to condense and solidify because the freezing point of the mixed treatment liquid decreases with the increase in the proportion of the sublimable substance.

[0058] In addition, as the organic solvent in the treatment liquid absorbs heat during volatilization, the cooling effect of the volatilization heat absorption will also contribute to the solidification process of the treatment liquid film.

[0059] Furthermore, during the liquid film curing process, the substrate / wafer is rotated (spin) at an appropriate speed. The high-speed rotation increases the relative speed between the substrate / wafer surface and the upper ambient area, which is beneficial to the volatilization of the organic solvent and the cooling effect.

[0060] Furthermore, during the liquid film solidification process, a cold medium is sprayed on the back of the substrate, and the substrate / wafer is rotated to achieve uniform cooling of the substrate / wafer. Under the action of the uniform cooling treatment, the condensation and solidification process of the liquid film on the surface of the substrate / wafer is strengthened, thereby forming a uniform solidified film.

[0061] According to this method, the processing liquid film on the surface of the substrate / wafer solidifies under the effects of vacuum treatment, substrate / wafer rotation, back-spraying cold medium, etc., and finally forms a solidified film with appropriate and uniform thickness. The thickness of the solidified film can be 0.1 to 500um.

[0062] After the liquid film solidification process, the solidified film sublimation process is started, so that the solidified film on the surface of the substrate / wafer sublimates and transforms from a solid state to a gaseous volatile product, which is separated and removed from the surface of the substrate / wafer, avoiding the liquid process in the traditional drying process and the problem of pattern lodging that may be caused thereby.

[0063] Furthermore, in the solidified film sublimation process, the substrate / wafer surface is uniformly evacuated by a multi-hole tubular evacuation device arranged in the horizontal direction of the substrate / wafer. During the evacuation process of the sublimation process, the pressure of the substrate / wafer surface area is 1 to 300 Torr. The evacuation process can reduce the partial pressure of the sublimable substance in the substrate / wafer surface area, thereby promoting the sublimation and volatilization of the sublimable substance, which is beneficial to the sublimation and removal process of the sublimable substance.

[0064] The volatiles of the sublimated sublimation substances are then removed by the exhaust system, thereby achieving the separation of the sublimation substances from the substrate / wafer surface. When the sublimation substances are completely sublimated and removed, the sublimation process is completed. At this time, there is no sublimation substance residue or other solid and liquid residue on the substrate / wafer surface, and the sublimation drying of the substrate / wafer is achieved.

[0065] In addition, in the sublimation process, the substrate / wafer is rotated and the back-sprayed thermal medium is used to appropriately heat the substrate / wafer to assist the sublimation process of the cured film.

[0066] According to this method, in the solidified film sublimation process, uniform exhaust from a porous tubular exhaust device, high-speed rotation of the substrate / wafer, and back-spraying of uniform heat medium are used to achieve uniform sublimation of the solidified film on the substrate / wafer surface. The solidified film on the substrate / wafer surface sublimates at the same rate in each area, and premature sublimation in a local area will not occur, resulting in uneven local stress and the possible lodging of the pattern.

[0067] According to this method, whether it is a liquid film solidification process or a sublimation process, a uniform solidification process and a uniform sublimation process of the liquid film on the substrate / wafer surface can be achieved, and there will be no uneven thickness of the solidified film or premature sublimation of local areas, which will lead to local stress unevenness and the possible problem of pattern lodging, thereby well realizing the sublimation drying substrate processing method and substrate processing device.

[0068] In one embodiment of the present invention, the substrate sublimation drying processing unit is a combination of a porous tubular exhaust device and a porous tubular blowing device. The porous tubular exhaust device and the porous tubular blowing device arranged in the horizontal direction of the wafer are used to uniformly exhaust and blow the processing liquid film or the cured film on the surface of the substrate / wafer.

[0069] In the liquid film thinning process, the uniform exhaust and blowing treatment using a porous tubular exhaust device and a porous tubular blowing device can remove the volatilized organic solvent and sublimable substances from the wafer surface treatment liquid film, reduce the partial pressure of the organic solvent and sublimable substances, and help promote the volatilization of the treatment liquid, thereby thinning the liquid film and thinning the treatment liquid film to a suitable and uniform thickness.

[0070] Similarly, by utilizing the above-mentioned vacuuming and blowing processes, uniform solidification of the treated liquid film and uniform sublimation of the solidified film can also be achieved.

[0071] According to the method, in the solidified film sublimation process, uniform suction and blowing of a porous tubular exhaust device and a porous tubular blowing device, high-speed rotation of the substrate / wafer, and back-spraying of uniform heat medium are used to achieve uniform sublimation of the solidified film on the substrate / wafer surface. The solidified film on the substrate / wafer surface sublimates at the same rate in each area, and premature sublimation of a local area will not occur, resulting in local stress unevenness and the possible problem of pattern lodging.

[0072] According to this method, whether it is a curing process or a sublimation process, a uniform curing process and a uniform sublimation process of the liquid film on the surface of the substrate / wafer can be achieved, and there will be no uneven thickness of the cured film or premature sublimation of local areas, which will lead to uneven local stress and the possible problem of pattern lodging, thereby well realizing the sublimation drying substrate processing method and substrate processing device.

[0073] Furthermore, a uniform porous tubular exhaust device may be provided on one side of the substrate / wafer in the horizontal direction, and a uniform porous tubular purge device may be provided on the other side opposite thereto, so as to achieve more uniform and efficient gas circulation and volatile substance removal on the surface of the substrate / wafer by blowing and exhausting at the same time.

[0074] Compared with the prior art, the advantages of the present invention are:

[0075] The present invention does not need to set a complex shielding plate structure above the substrate / wafer, and uses a relatively simple structural design, such as a multi-hole tubular exhaust device and / or a multi-hole tubular purge device, to achieve sublimation drying treatment of the substrate / wafer after cleaning. Using the processing device and processing method of the present invention, the integration of substrate / wafer cleaning and sublimation drying can be achieved, that is, the cleaning and sublimation drying of the substrate / wafer are completed in the same processing chamber, which can effectively simplify the process and improve the production capacity, and avoid the complication of the process flow and the reduction of production capacity caused by independent cleaning chambers and drying chambers.

[0076] In addition, the present invention can achieve a drying treatment effect of uniform solidification of the liquid film on the surface of the substrate / wafer and uniform sublimation of the cured film through a porous tubular exhaust device and / or a porous tubular purge device, or a porous guide plate sublimation drying treatment device, thereby preventing uneven stress caused by uneven thickness of the cured film and premature sublimation of local areas of the cured film, thereby effectively avoiding the problem of pattern lodging on the surface of the substrate / wafer during the drying process. BRIEF DESCRIPTION OF THE DRAWINGS

[0077] Figure 1 Schematic diagram of the formation and sublimation drying process of the processing liquid film on the substrate / wafer surface, wherein (a) shows the IPA liquid film covering the substrate / wafer surface and the graphic structure; (b) shows the IPA liquid film on the substrate / wafer surface and the graphic structure is completely replaced by the processing liquid to form a processing liquid film; (c) shows the processing liquid film on the substrate / wafer surface begins to condense and solidify; (d) shows the processing liquid film on the substrate / wafer surface and part of the graphic structure condenses and solidifies; (e) shows the processing liquid film on the substrate / wafer surface and the graphic structure is completely condensed and solidified; (f) shows the solidified film on the substrate / wafer surface sublimates, realizing the sublimation drying treatment of the substrate / wafer surface.

[0078] Figure 2 Schematic diagram of the pattern collapse caused by uneven local stress during the sublimation drying process of the processing liquid film on the substrate / wafer surface.

[0079] Figure 3 It is a schematic diagram of the structure of the substrate / wafer processing device of Example 1, wherein (a) is a schematic diagram of the structure of the substrate / wafer processing device, (b) is a schematic diagram of the front structure of the sublimation drying processing unit, and (c) is a top view of the sublimation drying processing unit.

[0080] Figure 4 Schematic diagram of the structure of the substrate / wafer sublimation drying processing unit of Example 2, wherein (a) is a schematic diagram of the front structure of the sublimation drying processing unit, and (b) is a top view of the sublimation drying processing unit.

[0081] Figure 5 Schematic diagram of the structure of the substrate / wafer sublimation drying processing unit of Example 3, wherein (a) is a schematic diagram of the front structure of the sublimation drying processing unit, and (b) is a top view of the sublimation drying processing unit.

[0082] Figure 6 The substrate / wafer sublimation drying processing unit of Example 4 is a structural schematic diagram of a porous guide plate sublimation drying processing device.

[0083] Among them, 110 is a rotating base device, 120 is a liquid nozzle unit, 130 is a porous tubular exhaust device, 140 is a porous tubular purge device, 111 is a fixed card needle, 112 is a liquid guide wall, 113 is a substrate / wafer base, 114 is a base rotation support rod, 115 is a base rotation motor, 116 is a cold medium pipeline, 116a is a cold medium switch valve, 117 is a hot medium pipeline, 117a is a hot medium switch valve, 118 is a back spray pipeline, 118a is a nozzle, 121 is a chemical liquid nozzle, 122 is an ultrapure water nozzle, 123 is an IPA nozzle, 124 is a processing liquid nozzle, 125 is a chemical liquid pipeline, 125a is a chemical liquid switch valve, 126 is an ultrapure water pipeline, 126a is an ultrapure water switch valve, 127 is an IPA pipeline , 127a is an IPA switch valve, 128 is a treatment liquid pipeline, 128a is a treatment liquid switch valve, 129 is a movable swing arm, 131 is a multi-porous exhaust pipe, 131a is an exhaust hole, 132 is an exhaust pipeline, 132a is an exhaust switch valve, 133 is an exhaust pipe lifting device, 134 is an exhaust pipe vacuum exhaust device, 141 is a multi-porous purge air pipe, 141a is a purge air hole, 142 is a purge gas supply pipeline, 142a is a purge gas switch valve, 143 is a purge air pipe lifting device, 144 is a purge gas supply source, 230 is a multi-porous guide plate sublimation drying treatment device, 231 is a multi-porous guide plate, 232 is an air guide hood, 233 is an air guide pipeline, 233a is a switch valve, 234 is a guide plate vacuum exhaust device, and 235 is an air guide hood lifting device.

[0084] Figure 7 The process flow chart of substrate / wafer processing. DETAILED DESCRIPTION

[0085] In order to make the purpose, technical solutions and advantages of the present invention more clear, the present invention is described in detail below with reference to the accompanying drawings and specific embodiments.

[0086] Example 1

[0087] like Figure 3 As shown, a substrate / wafer processing device 100 includes a sublimation drying processing unit, a rotating base device 110 and a liquid nozzle unit 120, wherein the sublimation drying processing unit is composed of a porous tubular exhaust device 130 and a porous tubular purge device 140, and the porous tubular exhaust device 130 and the porous tubular purge device 140 are respectively arranged at relative positions of the rotating base device 110;

[0088] The porous tubular exhaust device 130 includes a porous exhaust pipe 131, exhaust holes 131a, an exhaust pipeline 132, an exhaust switch valve 132a, an exhaust pipe lifting device 133 and an exhaust pipe vacuum exhaust device 134, wherein the porous exhaust pipe 131 is a hollow straight pipe with two ends sealed, and a plurality of exhaust holes 131a are evenly arranged on the side wall surface facing the substrate, and two exhaust pipelines 132 are evenly arranged on the side wall surface of the porous exhaust pipe 131 facing away from the substrate. One end is connected to the porous exhaust pipe 131, and the other end is connected to the exhaust pipe vacuum exhaust device 134 through the exhaust switch valve 132a. Two exhaust pipe lifting devices 133 are evenly arranged on the porous exhaust pipe 131. The exhaust pipe lifting device 133 is composed of a lifting rod and a lifting motor. One end of the lifting rod is connected to the porous exhaust pipe 131, and the other end is connected to the lifting motor. The porous tubular exhaust device 130 can be raised and lowered to make the porous exhaust pipe 131 in an avoidance position or a processing position.

[0089] The porous tubular purge device 140 includes a porous purge gas pipe 141, a purge gas hole 141a, a purge gas supply pipeline 142, a purge gas switch valve 142a, a purge gas pipe lifting device 143 and a purge gas supply source 144, wherein both ends of the porous purge gas pipe 141 are sealed, a plurality of purge gas holes 141a are evenly arranged on the side wall surface facing the substrate, two purge gas supply pipelines 142 are evenly arranged on the side wall surface of the porous purge gas pipe 141 facing away from the substrate, and the purge gas supply pipeline 142 One end of the lifting rod is connected to the porous purge air pipe 141, and the other end is connected to the purge air supply source 144 via the purge air switch valve 142a. Two purge air pipe lifting devices 143 are evenly arranged on the porous purge air pipe 141. The purge air pipe lifting device 143 consists of a lifting rod and a lifting motor. One end of the lifting rod is connected to the porous purge air pipe 141, and the other end is connected to the lifting motor. The porous tubular purge device 140 can be raised and lowered to place the porous tubular purge device 140 in an avoidance position or a processing position.

[0090] The porous exhaust pipe 131 and the porous purge pipe 141 are of the same shape and size, in the form of a straight rod, with a length equal to the diameter of the substrate / wafer base 113, a square cross-section, and a cross-sectional area of ​​1 cm 2 The distance between the porous exhaust pipe 131 and the porous purge gas pipe 141 and the edge of the substrate / wafer base 113 is 50 mm, and the purge gas supply source 144 supplies N2 to the substrate / wafer surface through the purge gas hole 141a to realize N2 purge treatment in the horizontal direction of the substrate / wafer surface.

[0091] The exhaust pipe 132 and the purge gas supply pipe 142 are made of PFA. The exhaust pipe vacuum exhaust device 134 is a vacuum pump.

[0092] The rotating base device 110 includes a fixed card pin 111, a liquid guide wall 112, a substrate / wafer base 113, a base rotation support rod 114 and a base rotation motor 115, wherein the substrate / wafer base 113 is a main body for carrying a substrate / wafer, and is cylindrical, and four fixed card pins 111 are evenly arranged on its edge for fixing the substrate / wafer. The substrate / wafer base 113 is connected to the base rotation motor 115 via the base rotation support rod 114. The substrate / wafer base 113 rotates under the control of the base rotation motor 115, thereby driving the substrate / wafer carried by it to rotate;

[0093] The liquid guide wall 112 is in the shape of an annular cup symmetrical about the central axis, and can be raised and lowered along the periphery of the substrate / wafer to collect liquid overflowed during liquid spraying or substrate / wafer rotation, and discharge the collected liquid from the chamber through the guide holes and guide pipes arranged at the bottom of the liquid guide wall 112.

[0094] A through hole through which a back spray pipeline 118 passes is provided in the center of the base rotating support rod 114 along the longitudinal axis direction. One end of the back spray pipeline passes through the through hole inside the base rotating support rod 114 and the through hole in the center of the substrate / wafer base 113 and is connected to the nozzle (118a). The other end of the back spray pipeline 118 passes through the side wall of the base rotating support rod 114 and is connected to one end of the cold medium pipeline 116 and the hot medium pipeline 117 respectively through a three-way joint. The other end of the cold medium pipeline 116 is connected to the cold medium supply source through a cold medium switching valve 116a, and the other end of the hot medium pipeline 117 is connected to the hot medium supply source through a hot medium switching valve 117a. The cold medium or the hot medium is sprayed toward the back side of the substrate / wafer through the nozzle 118a of the back spray pipeline 118.

[0095] The cold medium is ultrapure water at a temperature of 5°C, and the hot medium is ultrapure water at a temperature of 50°C.

[0096] The liquid nozzle unit 120 includes a liquid nozzle device and a movable swing arm 129. The liquid nozzle device is a multi-channel liquid nozzle, including a chemical liquid nozzle 121, an ultrapure water (DIW) nozzle 122, an IPA nozzle 123 and a treatment liquid nozzle 124. The chemical liquid nozzle 121 is connected to a chemical liquid supply source through a chemical liquid pipeline 125 and a chemical liquid switch valve 125a. The ultrapure water nozzle 122 is connected to an ultrapure water supply source through an ultrapure water pipeline 126 and an ultrapure water switch valve 126a. The IPA nozzle 123 is connected to an IPA supply source through an IPA pipeline 127 and an IPA switch valve 127a. The treatment liquid nozzle 124 is connected to a treatment liquid supply source through a treatment liquid pipeline 128 and a treatment liquid switch valve 128a.

[0097] like Figure 3 As shown, a chemical liquid nozzle 121, an ultrapure water (DIW) nozzle 122, an IPA nozzle 123 and a treatment liquid nozzle 124 are each provided;

[0098] One end of the movable swing arm 129 is connected to the side wall surface of the liquid nozzle device close to the chemical liquid nozzle 121, and the other end is connected to the driving control device, which is a stepping motor.

[0099] The liquid nozzle device can be moved to the center position above the substrate / wafer under the drive of the movable swing arm 129 to spray liquid onto the front surface of the substrate / wafer.

[0100] Example 2

[0101] like Figure 4 As shown, this embodiment is a variation of the substrate / wafer processing device in Embodiment 1, and is different from the substrate / wafer processing device in Embodiment 1 in that the sublimation drying processing unit is only a porous tubular exhaust device 130, and the uniform exhaust treatment of the porous tubular exhaust device 130 is used to realize the liquid film thinning process, the curing process and the sublimation process on the surface of the substrate / wafer. The arrangement of other components is the same as that in Embodiment 1.

[0102] The porous tubular exhaust device 130 includes a porous exhaust pipe 131, an exhaust hole 131a, an exhaust pipeline 132, an exhaust switch valve 132a, an exhaust pipe lifting device 133 and an exhaust pipe vacuum exhaust device 134, wherein both ends of the porous exhaust pipe 131 are sealed, and a plurality of exhaust holes 131a are evenly arranged on the side wall surface facing the substrate, with a hole diameter of 2mm, and two exhaust pipes are arranged on the side wall surface of the two ends of the porous exhaust pipe 131 facing away from the substrate. One end of the exhaust pipe 132 is connected to the porous exhaust pipe 131, and the other end is connected to the exhaust pipe vacuum exhaust device 134 through the exhaust switch valve 132a. Two exhaust pipe lifting devices 133 are arranged on the porous exhaust pipe 131. The exhaust pipe lifting device 133 is composed of a lifting rod and a lifting motor. One end of the lifting rod is connected to the porous exhaust pipe 131, and the other end is connected to the lifting motor, so as to realize the rising and falling of the porous tubular exhaust device 130.

[0103] The porous tubular exhaust device 130 is disposed on one side of the rotating base device 110 , and the distance between the porous exhaust pipe 131 and the edge of the substrate / wafer base 113 is 40 mm;

[0104] The porous exhaust pipe 131 is in the shape of a straight rod, whose length is equal to the diameter of the substrate / wafer base 113, and the cross-section is rectangular. The length of the cross-section is 2 cm and the width is 1 cm. The side length of the porous exhaust pipe 131 facing the substrate is 2 cm. The porous exhaust pipe 131 and the exhaust pipeline 132 are made of PFA material.

[0105] The exhaust pipe vacuum exhaust device 134 is a vacuum pump.

[0106] Example 3

[0107] like Figure 5 As shown, this embodiment is a variation of the substrate / wafer processing device in Example 2, and is different from the substrate / wafer processing device in Example 2 in that the porous exhaust pipe 131 in the porous tubular exhaust device 130 is a circular porous manifold, and the arrangements of other components are the same as those in Example 2.

[0108] The porous tubular exhaust device 130 includes a porous exhaust pipe 131, exhaust holes 131a, an exhaust pipeline 132, an exhaust switch valve 132a, an exhaust pipe lifting device 133 and an exhaust pipe vacuum exhaust device 134, wherein a plurality of exhaust holes 131a are evenly arranged on the side wall surface of the porous exhaust pipe 131 facing the substrate, four exhaust pipelines 132 are evenly arranged on the side wall surface of the porous exhaust pipe 131 facing away from the substrate, one end of the exhaust pipeline 132 is connected to the porous exhaust pipe 131, and the other end is connected to the exhaust pipe vacuum exhaust device 134 via the exhaust switch valve 132a, and two exhaust pipe lifting devices 133 are evenly arranged on the porous exhaust pipe 131, and the exhaust pipe lifting device 133 can realize the rising and falling of the porous tubular exhaust device 130.

[0109] The porous exhaust pipe 131 is in a circular shape. The difference between the inner diameter of the circular porous exhaust pipe 131 and the diameter of the substrate / wafer base 113 is 40 mm. The inner diameter of the porous exhaust pipe 131 is 2 cm. The exhaust pipe 132 is made of PFA.

[0110] The exhaust pipe vacuum exhaust device 134 is a vacuum pump.

[0111] Example 4

[0112] like Figure 6 As shown, this embodiment is a variation of the substrate / wafer processing device in Example 1, and is different from the substrate / wafer processing device in Example 1 in that the sublimation drying processing unit is a porous guide plate sublimation drying processing device 230, and the rest is the same as Example 1.

[0113] The porous guide plate sublimation drying treatment device 230 is disposed directly above the rotating base device 110 and is used for uniformly guiding the gas or volatile substances in the area above the substrate / wafer surface. The porous guide plate sublimation drying treatment device 230 includes a porous guide plate 231, an air guide cover 232, an air guide pipeline 233, a switch valve 233a, a guide plate vacuum exhaust device 234 and an air guide cover lifting device 235, wherein the porous guide plate 231 is connected to the bottom surface of the air guide cover 232, and the top of the air guide cover 232 is provided with an air outlet connected to the air guide pipeline 233, one end of the air guide pipeline 233 is connected to the air outlet provided on the top of the air guide cover 232, and the other end is connected to the guide plate vacuum exhaust device 234 through the switch valve 233a, a plurality of air vents 231a penetrating up and down in the vertical direction are evenly arranged on the porous guide plate 231, and two air guide cover lifting devices 235 are evenly arranged on the air guide cover 232; the air guide cover lifting device 235 is composed of a lifting rod fixed to the upper wall of the air guide cover 232 and a lifting motor controlling the lifting rod.

[0114] The porous guide plate 231 is a circular porous guide plate, and its diameter is the same as the diameter of the substrate / wafer base 113. The diameter of the vent 231a is 2 mm. The air guide cover 232 is an inverted funnel shape, and the bottom surface is connected to the porous guide plate 231. The air guide pipe 233 is made of PFA (Perfluoroalkoxy, fusible polytetrafluoroethylene) material, and the guide plate vacuum exhaust device 234 is a vacuum pump.

[0115] Example 5

[0116] The substrate / wafer processing device in Example 1 is used to clean and dry a 12-inch wafer W (with a diameter of 30 cm). Figure 7 As shown, the specific process is:

[0117] First, check that all components of the substrate / wafer processing device are in normal state, the multi-hole exhaust pipe 131 and the multi-hole purge pipe 141 are in a evacuation position 10 cm above the surface of the substrate / wafer base 113, the liquid guide wall 112 is in a descending position below the substrate / wafer base 113, and the liquid nozzle device is in the origin position (home position) away from the wafer W; all valves are in a closed state;

[0118] (1) A wafer W is introduced into the substrate / wafer base 113, and the wafer W is fixed by four fixing pins 111, and the liquid guide wall 112 is raised;

[0119] (2) Liquid film forming process: the rotation speed of the susceptor rotating motor 115 is set to 1000 rpm / min, and the susceptor rotating motor 115 is turned on to rotate the wafer W.

[0120] Then, operate the movable swing arm 129 to move the liquid nozzle device above the wafer so that the chemical liquid nozzle 121 is located directly above the center of the wafer surface, open the chemical liquid on-off valve 125a, spray 1% dHF chemical liquid onto the surface of wafer W, the spraying time is 60s, and then close the chemical liquid on-off valve 125a.

[0121] Next, the ultrapure water nozzle 122 is moved to the top of the center of the wafer W surface, the ultrapure water on-off valve 126a is opened, and ultrapure water is sprayed onto the wafer W surface to rinse the chemical liquid dHF on the wafer W surface. The spraying time is 30s. After the spraying is completed, the chemical liquid on-off valve 125a is closed.

[0122] Subsequently, the IPA nozzle 123 is moved to the top of the center of the wafer W surface, the IPA on-off valve 127a is opened, and IPA is sprayed onto the wafer W surface to replace the ultrapure water on the wafer W surface. The spraying time is 30 seconds. After the spraying is completed, the IPA on-off valve 127a is closed.

[0123] Finally, move the processing liquid nozzle 124 to just above the center of the surface of wafer W, open the processing liquid on-off valve 128a, and spray the processing liquid onto the surface of wafer W for 60 seconds. After spraying, close the processing liquid on-off valve 128a to form a processing liquid film with a thickness of 500 microns; the processing liquid is a mixed processing liquid composed of 40wt.% cyclohexanone oxime and 60wt.% isopropanol.

[0124] (3) Liquid film thinning process. The liquid film thinning process is mainly achieved through the following three coordinated methods: ①. Adjust the rotation speed of the base rotation motor 115 to 2000 rpm / min, so that the wafer W rotates at a high speed, and the processing liquid film on the surface of the wafer W is partially separated from the surface of the wafer W under the action of centrifugal force; ②. Lower the porous tubular purge device 140 and the porous tubular exhaust device 130 to the processing position flush with the height of the wafer W, and open the purge gas switch valve 142a and the exhaust switch valve 132a at the same time to achieve the above The surface of the wafer W is Uniform blowing and exhaust treatment of regional nitrogen N2, the exhaust rate of the porous exhaust pipe 131 is 20L / min, and the blowing rate of the porous purge pipe 141 is 20L / min, taking away the volatilized organic solvents and sublimation substances of the surface treatment liquid film of wafer W, reducing the partial pressure of organic solvents and sublimation substances, promoting the volatilization of organic solvents and sublimation substances, thereby thinning the liquid film; ③. Open the heat medium switch valve 117a, and supply heat medium to the back of wafer W. The heat medium is ultrapure water (DIW) at a temperature of 50°C. The heat medium is evenly coated on the back of wafer W under the centrifugal force of the high-speed rotation of wafer W, accelerating the volatilization process of organic solvents and sublimation substances, and thinning the liquid film. The above three methods are run simultaneously to achieve uniform thinning of the surface treatment liquid film of wafer W, and the duration is 40s, so that a uniform and appropriate treatment liquid film is formed on the surface of wafer W. The thickness of the thinned treatment liquid film is 200um. The thinned treatment liquid film is beneficial to reducing the thickness of the subsequent solidified film and the time consumption of the sublimation process.

[0125] (4) Liquid film solidification process: Keep the operating states of ① and ② in step (3) unchanged, and realize the uniform blowing and exhausting of nitrogen N2 in the area above the surface of wafer W. Since the vapor pressure of the organic solvent in the processing liquid is higher than that of the sublimable substance, the volatilization of the organic solvent will be more intense, and the volatilization of the organic solvent will absorb heat, so that the temperature of the processing liquid film is reduced, thereby condensing and solidifying. At the same time, close the hot medium switch valve 117a, open the cold medium switch valve 116a, and supply a cold medium of ultrapure water with a temperature of 5°C to the back of wafer W. The cold medium is evenly coated on the back of wafer W under the centrifugal force of the high-speed rotation of the wafer, and the wafer W is evenly cooled, so that the processing liquid film on the surface of wafer W is condensed and solidified. The freezing point of the mixed processing liquid composed of organic solvent and sublimable substance will decrease with the increase of the proportion (concentration) of sublimable substance. When the organic solvent in the processing liquid film evaporates to a certain extent, that is, when the proportion of sublimable substances in the processing liquid film increases to a certain extent, the processing liquid film on the surface of the wafer W begins to condense and solidify to form a solidified film. The duration of the liquid film solidification process is 40 seconds.

[0126] (5) Solidified film sublimation process: The solidified film sublimation process is the same as the thinning method of the liquid film in step (3), and is mainly achieved in coordination through the following three methods: ① Maintain the porous tubular purge device 140 and the porous tubular exhaust device 130 in the processing position, keep the purge gas switch valve 142a and the exhaust switch valve 132a in the open state, and achieve uniform blowing and uniform exhaust treatment of nitrogen N2 in the area above the surface of wafer W, thereby reducing the partial pressure of sublimable substances and promoting the sublimation process; ②. Maintain the rotation speed of the base rotation motor 115 at 2000rpm / min, so that the wafer W rotates at a high speed, and the high-speed rotation of the wafer W increases the relative movement speed of the solidified film on the surface of the wafer W and the upper environmental area, thereby promoting the sublimation process; ③. Turn off the cold medium The switch valve 116a is opened, and the heat medium switch valve 117a is opened to supply a heat medium of ultrapure water at a temperature of 50°C to the back side of the wafer W. The heat medium is evenly coated on the back side of the wafer W under the centrifugal force of the high-speed rotation of the wafer, and the volatilization process of the sublimable substance is accelerated by the effect of temperature. Since the temperature of the heat medium is lower than the melting point of the sublimable substance (cyclohexanone oxime), part of the sublimable substance in the solidified film is prevented from melting into a liquid state (when the liquid sublimable substance evaporates, the problem of pattern collapse may occur due to the effect of the surface tension of the liquid); the duration of the solidified film sublimation process is 30s, the heat medium switch valve 117a is closed, the base rotation motor 115 is turned off, the rotation of the wafer W is stopped, and the purge gas switch valve 142a and the exhaust switch valve 132a are closed.

[0127] (6) After the sublimation process is completed, the sublimable substances on the surface of the wafer W are completely sublimated and drying is completed. The liquid guide wall 112 is lowered, the liquid nozzle device is moved to the origin position away from the wafer W, and the porous tubular purge device 140 and the porous tubular exhaust device 130 are raised to the avoidance position; the wafer W is transferred out, and the cleaning and sublimation drying process of the wafer W is completed.

[0128] Reasonable deformation or changes based on this patent and its embodiments should also be protected by this patent, such as changing the shape or position of the porous guide plate or porous manifold.

Claims

1. A substrate / wafer processing device, characterized in that: The device comprises a sublimation drying processing unit, a rotating base device (110), and a liquid nozzle unit (120); wherein the sublimation drying processing unit is a porous tubular exhaust device (130) and / or a porous tubular purge device (140), The multi-porous tubular exhaust device (130) comprises a multi-porous exhaust pipe (131), exhaust holes (131a), an exhaust pipeline (132), an exhaust switch valve (132a), an exhaust pipe lifting device (133) and an exhaust pipe vacuum exhaust device (134), wherein both ends of the multi-porous exhaust pipe (131) are sealed, a plurality of exhaust holes (131a) are arranged on the side wall surface facing the substrate, 2 to 5 exhaust pipelines (132) are evenly arranged on the side wall surface of the multi-porous exhaust pipe (131) facing away from the substrate, one end of the exhaust pipeline (132) is connected to the multi-porous exhaust pipe (131), and the other end is connected to the exhaust pipe vacuum exhaust device (134) via the exhaust switch valve (132a), and 2 to 3 exhaust pipe lifting devices (133) are evenly arranged on the multi-porous exhaust pipe (131); The multi-porous tubular purge device (140) comprises a multi-porous purge air pipe (141), purge air holes (141a), a purge air supply pipeline (142), a purge air switch valve (142a), a purge air pipe lifting device (143) and a purge air supply source (144), wherein both ends of the multi-porous purge air pipe (141) are sealed, a plurality of purge air holes (141a) are arranged on the side wall surface facing the substrate, 2-5 purge air supply pipelines (142) are evenly arranged on the side wall surface of the multi-porous purge air pipe (141) facing away from the substrate, one end of the purge air supply pipeline (142) is connected to the multi-porous purge air pipe (141), and the other end is connected to the purge air supply source (144) via the purge air switch valve (142a), and 2-3 purge air pipe lifting devices (143) are evenly arranged on the multi-porous purge air pipe (141).

2. The processing device according to claim 1, characterized in that The porous exhaust pipe (131) and the porous purge pipe (141) are rod-shaped, annular or semi-annular, with a circular or square cross section, and are arranged on the side of the rotating base device (110); The multi-hole exhaust pipe (131) and the multi-hole purge pipe (141) can be raised and lowered under the action of the exhaust pipe lifting device (133) and the purge pipe lifting device (143).

3. The processing device according to claim 1, characterized in that The sublimation drying treatment unit may also be a porous guide plate sublimation drying treatment device (230), wherein the porous guide plate sublimation drying treatment device (230) comprises a porous guide plate (231), an air guide cover (232), an air guide pipeline (233), a switch valve (233a), and a guide plate vacuum exhaust device (234), wherein the porous guide plate (231) is connected to the bottom surface of the air guide cover (232), and the top of the air guide cover (232) is provided with An air outlet connected to the air guide pipe (233), one end of the air guide pipe (233) is connected to the air outlet arranged on the top of the air guide cover (232), and the other end is connected to the guide plate vacuum exhaust device (234) through the switch valve (233a), and a plurality of air holes (231a) penetrating vertically are evenly arranged on the porous guide plate (231); 2-3 air guide cover lifting devices (235) are evenly arranged on the upper wall of the air guide cover (232); The porous guide plate sublimation drying treatment device (230) is arranged directly above the rotating base device (110); The porous guide plate sublimation drying treatment device (230) can be raised and lowered under the action of the air guide cover lifting device (235).

4. The processing device according to claim 1, characterized in that The rotating base device (110) comprises a fixed clamping pin (111), a liquid guide wall (112), a substrate / wafer base (113), a base rotating support rod (114) and a base rotating motor (115); The substrate / wafer base (113) is a main body for carrying the substrate / wafer, and is in the shape of a disk or a cylinder as a whole. A through hole is provided in the center of the substrate / wafer base (113), and more than two fixing pins (111) are provided on its edge for fixing the substrate / wafer. The substrate / wafer base (113) is connected to the base rotating motor (115) via the base rotating support rod (114). The substrate / wafer base (113) rotates under the control of the base rotating motor (115), thereby driving the substrate / wafer carried by it to rotate; A through hole through which a back spray pipeline (118) passes is provided in the center of the base rotating support rod (114) along the longitudinal axis direction. One end of the back spray pipeline (118) passes through the through hole inside the base rotating support rod (114) and the through hole in the center of the substrate / wafer base (113) and is connected to a nozzle (118a). The other end of the back spray pipeline (118) passes through the side wall surface of the base rotating support rod (114) and is connected to one end of a cold medium pipeline (116) and a hot medium pipeline (117) respectively through a three-way joint. The other end of the cold medium pipeline (116) is connected to a cold medium supply source through a cold medium switch valve (116a), and the other end of the hot medium pipeline (117) is connected to a hot medium supply source through a hot medium switch valve (117a). The cold medium or hot medium is sprayed toward the back of the substrate / wafer through the nozzle (118a) of the back spray pipeline (118).

5. The processing device according to claim 1, characterized in that The liquid nozzle unit (120) comprises a liquid nozzle device and a movable swing arm (129); The liquid nozzle device is a multi-channel liquid nozzle, comprising a chemical liquid nozzle (121), an ultrapure water (DIW) nozzle (122), an IPA nozzle (123) and a treatment liquid nozzle (124). The chemical liquid nozzle (121) is connected to a chemical liquid supply source via a chemical liquid pipeline (125) and a chemical liquid switch valve (125a); the ultrapure water nozzle (122) is connected to an ultrapure water supply source via an ultrapure water pipeline (126) and an ultrapure water switch valve (126a); the IPA nozzle (123) is connected to an IPA supply source via an IPA pipeline (127) and an IPA switch valve (127a); the treatment liquid nozzle (124) is connected to a treatment liquid supply source via a treatment liquid pipeline (128) and a treatment liquid switch valve (128a); One end of the movable swing arm (129) is connected to the side wall surface of the liquid nozzle device close to the chemical liquid nozzle (121), and the other end is connected to the driving control device in the processing chamber.

6. The processing device according to claim 1, characterized in that The substrate sublimation drying processing unit is arranged on the side or above the rotating base device (110) and can move, and the liquid nozzle unit (120) is arranged on the side of the rotating base device (110) and can move to the top of the substrate / wafer base (113).

7. The processing device according to claim 1, characterized in that The cold medium and the hot medium are fluids that can be cooled and heated, such as one or more of ultrapure water, alcohol organic substances, inactive gases (such as nitrogen, helium, argon), etc. The temperature range of the cold medium is -20°C to 20°C, and the temperature range of the hot medium is 25°C to 70°C.

8. A method for processing a substrate / wafer using the substrate / wafer processing device according to any one of claims 1 to 7, characterized in that: The method specifically comprises the following steps: (1) a substrate / wafer W to be processed is introduced into the substrate / wafer base (113), and the substrate / wafer W is fixed by a fixing pin (111), and then the liquid guide wall (112) is raised; (2) Liquid film forming step: turning on the base rotating motor (115) to rotate the substrate / wafer W at a speed of 500 to 1500 rpm / min, moving the liquid nozzle device to the top of the substrate / wafer, spraying the substrate / wafer with chemical liquid, ultrapure water, IPA and processing liquid in sequence, and forming a processing liquid film on the surface of the substrate / wafer; (3) Liquid film thinning process: achieved through the synergistic effect of the following three methods: ①, adjusting the rotation speed of the base rotating motor (115) to 1000-2000 rpm / min, so that the processing liquid film on the surface of the substrate / wafer W is partially separated from the surface of the substrate / wafer W under the action of centrifugal force; ②. Adjust the sublimation drying processing unit to the processing position, and perform uniform exhaust and / or purge processing on the horizontal or upper area of ​​the substrate / wafer W surface; ③. Open the heat medium switch valve (117a) to supply heat medium to the back side of the substrate / wafer W; (4) Liquid film solidification process: while keeping the operating states of ① and ② in step (3) unchanged, close the hot medium switch valve (117a), open the cold medium switch valve (116a), supply cold medium to the back side of the substrate / wafer W, and cool the substrate / wafer W evenly, so that the processing liquid film on the surface of the substrate / wafer W is condensed and solidified to form a solidified film; (5) Cured film sublimation step: sublimation of the cured film is achieved in the same manner as step (3); (6) After the solidified film sublimation process is completed, the substrate / wafer W is transferred out, and the cleaning and sublimation drying process of the substrate / wafer W is completed.

9. The method according to claim 8, characterized in that The chemical liquid in step (2) is one or more of 1% by volume dilute hydrofluoric acid (dilute-HF, dHF), SC-1 (Standard clean-1), SC-2 (Standard clean-2), etc.; The treatment liquid is composed of a sublimable substance and an organic solvent, and the mass proportion of the sublimable substance in the treatment liquid is 1% to 50%. The sublimable substance is one or more of heptafluorocyclopentane, tert-butyl alcohol, cyclohexanone oxime, camphor, 1,3,5-trioxane, naphthalene, etc.; The organic solvent is one or more of isopropyl alcohol (IPA), methanol, ethanol, acetone, etc., and the vapor pressure of the organic solvent is higher than that of the sublimable substance.

10. The method according to claim 9, characterized in that In step (5), the temperature of the heat medium supplied to the back side of the substrate / wafer W is not higher than the melting point of the sublimable substance in the processing liquid.

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