Monolithic multi-wavelength semiconductor laser with multi-angle beam control capability

Abstract

The present invention relates to the field of semiconductor laser technology, and in particular to a monolithic multi-wavelength semiconductor laser with a multi-angle beam control function, comprising an edge-emitting laser array, wherein the light-emitting ends of each edge-emitting laser enclose a space, and a beam angle control structure is prepared in the space, wherein the beam angle control structure and the light-emitting ends of each edge-emitting laser form an annular channel for injecting liquid, and the beam angle control structure comprises an electrosensitive material layer and a reflective film prepared on the side of the electrosensitive material layer for reflecting laser light, and the laser emission angle is adjusted by controlling the deformation amount of the deformable material layer and changing the type of injected liquid. The present invention improves the beam angle adjustment accuracy by injecting different types of liquids into the annular channel, cooperating with the deformation of the beam angle control structure, and completing the angle adjustment of the beam.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor lasers, and in particular relates to a monolithic multi-wavelength semiconductor laser with a multi-angle beam control function. Background Art

[0002] With the development of the information society, long-distance communications, industrial laser cutting, laser radar, laser rangefinder, optical scanner, face recognition, car automatic driving and even medical technology have put forward new requirements for the characteristics of semiconductor lasers such as light output direction, wavelength requirements, packaging complexity, beam quality, and integration. In general, the application field of laser output angle control is very wide, covering optical communication, optical processing, optical measurement, biomedicine and other fields. Due to the large divergence angle of the beam output by the traditional edge-emitting laser, the coupling efficiency is low, and it is difficult to integrate multiple edge-emitting lasers and their related functions into a two-dimensional microstructure or chip, making the development of multi-wavelength single-chip output integration a technical difficulty. Although the traditional vertical cavity surface emitting laser is easier to achieve two-dimensional integration, it is not suitable for high-power applications. How to balance the easy two-dimensional integration of beam direction control and high-power single-mode multi-wavelength output has become a research hotspot at home and abroad. Summary of the invention

[0003] In view of this, the present invention aims to provide a monolithic multi-wavelength semiconductor laser with multi-angle beam control function to solve the technical problem that existing color photovoltaic cells are difficult to achieve wide color gamut and large range wavelength control.

[0004] To achieve the above object, the technical solution created by the present invention is implemented as follows:

[0005] A monolithic multi-wavelength semiconductor laser with a multi-angle beam control function comprises an edge-emitting laser array, wherein the light-emitting ends of the edge-emitting lasers enclose a space, and a beam angle control structure is prepared in the space, wherein the beam angle control structure and the light-emitting ends of the edge-emitting lasers form an annular channel for injecting liquid, and the beam angle control structure comprises an electrosensitive material layer and a reflective film prepared on the side of the electrosensitive material layer for reflecting laser light, and the laser emission angle is adjusted by controlling the deformation amount of the deformable material layer and changing the type of injected liquid.

[0006] Furthermore, the deformable material layer is a truncated cone structure or a prism structure.

[0007] Furthermore, the electrosensitive material is polyvinyl alcohol, sodium polyacrylate or polyamide.

[0008] Furthermore, the edge emitting laser array is arranged in at least one layer. When the edge emitting laser array is arranged in two layers or more, the edge emitting lasers in each layer share a substrate, and an insulating layer is prepared between the upper and lower layers of edge emitting lasers.

[0009] Furthermore, when the edge-emitting laser array is arranged into two layers or more, an N-type electrode of each edge-emitting laser in this layer is prepared on the lower surface of each substrate layer, and an N-type confinement layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a P-type confinement layer and a P-type electrode of each edge-emitting laser in this layer are prepared in sequence on the upper surface of each substrate layer.

[0010] Furthermore, each edge emitting laser is an edge emitting single-mode laser and has a different output wavelength.

[0011] Furthermore, when the edge-emitting laser array is arranged in two layers or more, the deformation material layer of each layer is deposited on the substrate at the bottom layer.

[0012] Furthermore, when the edge emitting laser array is arranged in one layer, a transparent sealing layer is provided on the top of the annular channel; when the edge emitting laser array is arranged in two layers or more, a transparent sealing layer is provided on the top of the annular channel located on the top layer; and a liquid inlet channel and a liquid outlet channel penetrating the thickness are provided inside the transparent sealing layer.

[0013] Furthermore, the monolithic multi-wavelength semiconductor laser with multi-angle beam control function also includes a liquid circulation device connected to the liquid inlet flow channel and the liquid outlet flow channel.

[0014] Furthermore, the liquid circulation device includes a liquid storage tank, a first temporary storage tank and a second temporary storage tank; wherein, the number of the liquid storage tanks is at least one; the first temporary storage tank has a liquid return port and liquid inlets which are the same in number as the liquid storage tanks, each liquid inlet of the first temporary storage tank is connected to a liquid outlet of the corresponding liquid storage tank through a pipeline, and the liquid outlet of the first temporary storage tank is connected to a liquid inlet channel; the second temporary storage tank has a liquid inlet and a liquid return port which is the same in number as the liquid storage tanks, the liquid inlet of the second temporary storage tank is connected to the liquid outlet channel, and each liquid outlet of the second temporary storage tank is connected to a liquid inlet of the corresponding liquid storage tank through a pipeline.

[0015] Compared with the prior art, the invention can achieve the following beneficial effects:

[0016] (1) The present invention prepares a beam angle control structure and an edge-emitting laser array that outputs multi-wavelength beams based on the same substrate. While realizing two-dimensional integration of edge-emitting lasers, the beam angle control structure is used to change the propagation direction of the multi-wavelength beams and control the angle of the multi-wavelength beams, thereby achieving the purpose of both two-dimensional integrated beam direction controllability and high-power single-mode multi-wavelength output.

[0017] (2) By injecting different types of liquids into the annular channel formed between the beam angle control structure and the edge-emitting laser, the angle of the beam is adjusted in coordination with the deformation of the beam angle control structure, thereby improving the angle adjustment accuracy.

[0018] (3) Multi-layered edge-emitting lasers can increase output power and achieve high power. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The drawings constituting part of the present invention are used to provide a further understanding of the present invention. The exemplary embodiments and descriptions of the present invention are used to explain the present invention and do not constitute an improper limitation on the present invention. In the drawings:

[0020] Figure 1 3 is a side view of a monolithic multi-wavelength semiconductor laser with a multi-angle beam control function according to Example 1 of the present invention;

[0021] Figure 2 It is a top view of the monolithic multi-wavelength semiconductor laser with multi-angle beam control function described in Example 1 of the present invention after omitting the liquid circulation device;

[0022] Figure 3 It is a side view of a monolithic multi-wavelength semiconductor laser with multi-angle beam control function as described in Example 2 of the present invention.

[0023] Description of reference numerals:

[0024] Embodiment 1: edge emitting laser 1a, substrate 11a, N-type confinement layer 12a, N-type waveguide layer 13a, active layer 14a, P-type waveguide layer 15a, P-type confinement layer 16a, P-type electrode 17a, N-type electrode 18a, beam angle control structure 2a, deformable material layer 21a, reflective film 22a, transparent sealing layer 3a, liquid inlet channel 31a, liquid outlet channel 32a, liquid storage tank 41a, first temporary storage tank 42a, second temporary storage tank 43a, annular channel 5a;

[0025] Embodiment 2: Insulating layer 1b. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical solution and advantages of the invention more clear, the invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described here are only used to explain the invention and do not constitute a limitation of the invention.

[0027] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments may be combined with each other.

[0028] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0029] In the description of the invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the invention can be understood according to specific circumstances.

[0030] The present invention will be described in detail below with reference to the drawings and in combination with embodiments.

[0031] Example 1

[0032] like Figure 1 and Figure 2 As shown, the present invention creates an integrated semiconductor laser based on beam angle control in embodiment 1, including an edge emitting laser array composed of multiple edge emitting lasers 1a, each edge emitting laser 1a is arranged in a layer and the light emitting end surrounds a space, and a beam angle control structure 2a is prepared in the space, and the beam angle control structure 2a includes a deformable material layer 21a and a reflective film 22a prepared on the surface of the deformable material layer 21a. The deformable material of the deformable material layer 21a adopts polyvinyl alcohol, sodium polyacrylate, polyamide and other electrosensitive materials sensitive to current, which can change the physical form under the change of current. When the injected current changes, the deformable material layer 21a is deformed, and the deformation amount of the deformable material layer 21a is controlled by adjusting the current, thereby adjusting the inclination angle of the reflective film 22a, and then adjusting the reflection angle of the reflective film 22a to the laser output by each edge emitting laser 1a.

[0033] Each edge-emitting laser 1a is an edge-emitting single-mode laser and the output wavelengths of each edge-emitting laser 1a are the same or different. When different wavelengths are output, the angle control of multi-wavelength lasers can be achieved. The present invention can prepare edge-emitting single-mode lasers of different wavelengths by designing material systems and parameters, including but not limited to GaAs, GaN, InP and other material systems. Of course, the present invention can also use edge-emitting lasers that output corresponding mode lasers according to actual application requirements.

[0034] Each edge emitting laser 1a shares a substrate 11a. An N-type confinement layer 12a, an N-type waveguide layer 13a, an active layer 14a, a P-type waveguide layer 15a, a P-type confinement layer 16a, and a P-type electrode 17a of each edge emitting laser 1a are prepared in sequence on the upper surface of the substrate 11a. An N-type electrode 18a of each edge emitting laser 1a is prepared on the lower surface of the substrate 11a.

[0035] When preparing the epitaxial structure of the laser on the substrate 11a, the position of the beam angle control structure 2a is reserved in advance. After completing the preparation of each edge-emitting laser 1a, a deformable material is deposited at the reserved position on the substrate 11a to form a deformable material layer 21a. The deformable material layer 21a is then etched into a truncated cone structure or a prism structure through an etching process, so that the side of the deformable material layer 21a is an inclined surface, and a metal material is evaporated on the side of the deformable material layer 21a to form a reflective film 22a. The reflective film 22a can change the original light emitting direction of the edge-emitting laser 1a, so that the laser is emitted in a vertical direction of approximately 90°.

[0036] The specific preparation method of the edge-emitting laser array and the beam angle control structure 2a comprises the following steps:

[0037] S1: Prepare an edge emitting laser array on a substrate, and the light emitting ends of each edge emitting laser 1a enclose a space.

[0038] The space enclosed by each edge-emitting laser 1a is the position reserved for preparing the beam angle control structure 2a. For example, multiple layers of AlGaAs with different components are grown on a GaAs substrate by metal organic chemical vapor deposition (MOCVD) to form an N-type confinement layer 12a and an N-type waveguide layer 13a. Then, an active layer 14a is grown on the N-type waveguide layer 13a. Multiple layers of AlGaAs with different components are grown on the active layer 14a to form a P-type waveguide layer 15a and a P-type confinement layer 16a. Ti / Pt / Au metal is evaporated on the P-type confinement layer 16a to form a P-type electrode 17a. Finally, the GaAs substrate is thinned and polished, and Ni / AuGe / Pt / Au metal materials are deposited to form an N-type electrode 18a. Compared with pure gold electrodes, the P-type electrode 17a and the N-type electrode 18a using mixed metal electrodes have the following advantages:

[0039] 1) Improved conductivity: In some cases, the conductivity of mixed metals can be better than that of a single metal, especially in composite materials, which can provide better electron conduction paths.

[0040] 2) Reduced cost: By using a combination of low-cost or rare metals, mixed metal electrodes can reduce the need for the use of precious metals while maintaining good performance, thereby reducing overall manufacturing costs.

[0041] 3) Improved stability: Mixed metal electrodes exhibit better corrosion resistance and stability in many applications, especially in extreme environments (such as high temperature, high pH, ​​etc.).

[0042] 4) Tuning performance: By combining different metals, the performance of the electrode can be precisely tuned to meet the needs of specific applications, such as optimizing reaction selectivity or current density.

[0043] S2: Depositing a deformable material in the space enclosed by the edge emitting laser array on the substrate to form a deformable material layer 21a.

[0044] A plurality of layers of deformable material are deposited at a reserved position on the substrate to form a deformable material layer 21a, and then the deformable material layer 21a is etched into a truncated cone structure or a prism structure through an etching process, so that the side surface of the deformable material layer 21a is an inclined surface.

[0045] S3: a metal material is evaporated on the surface of the deformable material layer 21 a to form a reflective film 22 a , and the reflective film 22 a and the deformable material layer 21 a constitute a beam angle control structure 2 a .

[0046] A metal material is evaporated on the side of the truncated cone or prism structure deformable material layer 21a to form a reflective film 22a, or a metal material is evaporated on the side and top of the truncated cone or prism structure deformable material layer 21a to form a reflective film 22a.

[0047] The present invention integrates edge-emitting lasers of different structures by controlling the thickness, composition and structure of the growing material in a partitioned growth manner to achieve multifunctional output. In addition, each edge-emitting laser has an independent electrode and can be powered separately. Each edge-emitting laser 1a can work independently, and the number of edge-emitting lasers can be increased or decreased according to the actual application requirements of the light beam, ultimately achieving the purpose of outputting light beams of different wavelengths and the same mode, outputting light beams of different wavelengths and different modes, and outputting light beams of different directions.

[0048] An annular channel 5a for injecting liquid is formed between the etched beam angle control structure 2a and the light-emitting end of each edge-emitting laser 1a. Different types of liquids have different densities and different electrical conductivities. By injecting different types of liquids into the annular channel 5a, the light-emitting direction of the light beam is changed. In order to achieve the sealing of the liquid, a transparent sealing layer 3a is arranged above the beam angle control structure 2a. The transparent sealing layer 3a is made of transparent polymer materials such as polycarbonate, polymethyl methacrylate, polystyrene, and polydimethylsiloxane. The transparent sealing layer 3a is connected to the P-type electrode 17a by bonding or electron beam welding. A liquid inlet channel 31a and a liquid outlet channel 32a that penetrate the thickness are opened inside the transparent sealing layer 3a to achieve liquid circulation.

[0049] The integrated semiconductor laser based on beam angle control also includes a liquid circulation device, which includes a liquid storage tank 41a, a first temporary storage tank 42a, a second temporary storage tank 43a and an annular channel 5a; wherein the number of the liquid storage tank 41a is at least one, and each liquid storage tank 41a stores different types of liquids. Figure 2 The situation of a liquid storage tank is shown; the first temporary storage tank 42a has a liquid return port and the same number of liquid inlets as the liquid storage tank 41a, the liquid inlets of the first temporary storage tank 42a are respectively connected to the corresponding liquid outlets of the liquid storage tank 41a through pipes, and the liquid outlet of the first temporary storage tank 42a is connected to the liquid inlet channel 31a; the second temporary storage tank 43a has a liquid inlet and the same number of liquid return ports as the liquid storage tanks, the liquid inlet of the second temporary storage tank 43a is connected to the liquid outlet channel 32a, and the liquid outlets of the second temporary storage tank 43a are respectively connected to the corresponding liquid inlets of the liquid storage tank 41a through pipes.

[0050] The liquid flowing out of the liquid storage tank 41a flows through the first temporary storage tank 42a and then is injected into the annular channel 5a through the liquid inlet channel 31a, then enters the second temporary storage tank 43a from the liquid outlet channel 32a, and finally flows back to the liquid storage tank 41a, completing one cycle. By switching the liquid storage tank 41a, different types of liquids can be injected into the annular channel 5a.

[0051] By controlling the type of liquid injected into the annular channel 5a and the size of the current injected into the electrosensitive material, the change of the beam angle can be regulated. By combining the two controls, more precise beam direction regulation can be achieved. In addition, the flow of liquid can also take away the heat on the surface of the laser, thereby enhancing the heat dissipation of the laser and reducing the operating temperature of the laser.

[0052] Example 2

[0053] like Figure 3As shown, the difference between the integrated semiconductor laser based on beam angle control provided by Example 2 of the present invention and Example 1 is that the edge emitting laser array is arranged into two or more layers, the edge emitting lasers in each layer share a substrate, and an insulating layer 1b is prepared between the upper and lower layers of edge emitting lasers.

[0054] Each deformable material layer is deposited on the bottom substrate in sequence, and the inclination angles of the sides of each deformable material layer can be the same or different. The film system of each reflective film corresponds to the output wavelength of the edge-emitting laser of the layer.

[0055] When preparing the integrated semiconductor laser of Example 2, the bottom edge emitting laser is used as the first layer. The first layer of edge emitting laser is prepared first, and then an insulating material is deposited on the surface of the P-type electrode of the first layer of edge emitting laser to form an insulating layer 1b. Then, a second layer of edge emitting laser is generated on the insulating layer 1b until the preparation of the top edge emitting laser is completed.

[0056] When preparing a stacked edge-emitting laser, a position for a beam angle control structure is reserved in advance. After the preparation of all edge-emitting lasers is completed, a deformable material layer is first generated on the substrate of the first layer of edge-emitting lasers, and then the deformable material layer is etched. A reflective film is then evaporated on the side of the etched deformable material layer to complete the preparation of the first layer of beam angle control structure. Then, dielectric material is filled into the etched gaps until the gaps are filled. Then, a second layer of beam angle control structure is prepared on top of the first layer of beam angle control structure until the preparation of the topmost layer of beam angle control structure is completed.

[0057] The stacked edge-emitting laser array can increase the output power and achieve high-power, multi-angle output.

[0058] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the disclosure of the present invention can be performed in parallel, sequentially or in different orders, as long as the desired results of the technical solution disclosed in the present invention can be achieved, and this document does not limit this.

[0059] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A monolithic multi-wavelength semiconductor laser with multi-angle beam control function, characterized in that: It includes an edge-emitting laser array, and the light-emitting ends of each edge-emitting laser form a space. A beam angle control structure is prepared in the space. The beam angle control structure and the light-emitting ends of each edge-emitting laser form an annular channel for injecting liquid. The beam angle control structure includes a deformable material layer made of an electro-sensitive material and a reflective film prepared on the side of the deformable material layer for reflecting laser light. The laser emission angle is adjusted by controlling the deformation amount of the deformable material layer and changing the type of injected liquid.

2. The monolithic multi-wavelength semiconductor laser with multi-angle beam control function according to claim 1, characterized in that: The deformable material layer is a truncated cone structure or a prism structure.

3. The monolithic multi-wavelength semiconductor laser with multi-angle beam control function according to claim 1 or 2, characterized in that: The electrosensitive material is polyvinyl alcohol, sodium polyacrylate or polyamide.

4. The monolithic multi-wavelength semiconductor laser with multi-angle beam control function according to claim 1, characterized in that: The edge emitting laser array is arranged in at least one layer. When the edge emitting laser array is arranged in two layers or more, the edge emitting lasers in each layer share a substrate, and an insulating layer is prepared between the upper and lower layers of edge emitting lasers.

5. The monolithic multi-wavelength semiconductor laser with multi-angle beam control function according to claim 4, characterized in that: When the edge-emitting laser array is arranged into two layers or more, an N-type electrode of each edge-emitting laser in this layer is prepared on the lower surface of each substrate layer, and an N-type confinement layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a P-type confinement layer and a P-type electrode of each edge-emitting laser in this layer are sequentially prepared on the upper surface of each substrate layer.

6. The monolithic multi-wavelength semiconductor laser with multi-angle beam control function according to claim 1, characterized in that: Each edge emitting laser is an edge emitting single mode laser and has a different output wavelength.

7. The monolithic multi-wavelength semiconductor laser with multi-angle beam control function according to any one of claims 4 to 6, characterized in that: When the edge-emitting laser array is arranged in two or more layers, the deformation material layer of each layer is deposited on the substrate at the bottom layer.

8. The monolithic multi-wavelength semiconductor laser with multi-angle beam control function according to claim 4, characterized in that: When the edge emitting laser array is arranged in one layer, a transparent sealing layer is arranged on the top of the annular channel; when the edge emitting laser array is arranged in two layers or more, a transparent sealing layer is arranged on the top of the annular channel located in the top layer; a liquid inlet channel and a liquid outlet channel that penetrate the thickness are opened inside the transparent sealing layer.

9. The monolithic multi-wavelength semiconductor laser with multi-angle beam control function according to claim 8, characterized in that: It also includes a liquid circulation device connected with the liquid inlet flow channel and the liquid outlet flow channel.

10. The monolithic multi-wavelength semiconductor laser with multi-angle beam control function according to claim 9, characterized in that: The liquid circulation device includes a liquid storage tank, a first temporary storage tank and a second temporary storage tank; wherein, the number of the liquid storage tanks is at least one; the first temporary storage tank has a liquid return port and liquid inlets having the same number as the liquid storage tanks, each liquid inlet of the first temporary storage tank is connected to a liquid outlet of the corresponding liquid storage tank through a pipeline, and the liquid outlet of the first temporary storage tank is connected to a liquid inlet flow channel; the second temporary storage tank has a liquid inlet and a liquid return port having the same number as the liquid storage tanks, the liquid inlet of the second temporary storage tank is connected to the liquid outlet flow channel, and each liquid outlet of the second temporary storage tank is connected to a liquid inlet of the corresponding liquid storage tank through a pipeline.

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