Light emitting diode, manufacturing method and LED core particle

Abstract

The invention provides a light emitting diode, a manufacturing method and an LED core particle, a first laser cutting line is formed in a substrate of the light emitting diode through a laser implicit cutting process, and the first laser cutting line comprises a plurality of laser holes arranged at intervals. And finally, a longer and narrower laser hole is formed when the laser is focused in the substrate, and a deeper first laser cutting line is formed. And the internal scratches with increased depth are beneficial for releasing laser heat energy to the outside as soon as possible, and the internal influence of the heat energy on a processed object is reduced, so that the processing straightness is improved, and the problems of burrs, edge breakage and the like are reduced. Meanwhile, the relatively deep internal scratches also reduce the binding force between the connected chips, and are more beneficial to splitting so as to obtain flat and straight chip edges. Besides, shallow pits can be left in the side wall of a single core particle after the long and narrow laser holes are cracked, the side wall of the core particle cannot be corroded too much, and therefore the risk that the core particle is broken along the pits is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of light-emitting semiconductor manufacturing, and in particular to a light-emitting diode and a manufacturing method thereof, and an LED core particle. Background Art

[0002] A light emitting diode (LED) is a semiconductor light emitting element, which is usually a photoelectric element composed of a p-type semiconductor and an n-type semiconductor. The carriers of the p-type semiconductor and the n-type semiconductor recombine under the drive of current to emit light. It has the advantages of high luminous intensity, high efficiency, small size, and long service life. It can be widely used in optical display devices, traffic signs, data storage devices, communication devices, lighting devices, and medical equipment.

[0003] LED epitaxial growth and circuit chip preparation are all completed on wafers. Before application packaging, the wafer needs to be cut into smaller single chips. The traditional cutting method is to use blade cutting and laser ablation cutting, and the wafer material is crushed in the cutting path (called cutting road or cut). This method will leave charred debris in the cutting road, increase the cleaning process, and may cause problems such as debris and equipment damage.

[0004] In view of the shortcomings of the above-mentioned traditional cutting methods, invisible cutting laser technology is more widely used in actual production. It uses laser-induced perforation under the surface of the wafer and then expands it with tape to separate individual chips. However, as the chip package becomes narrower and the chip size continues to shrink, the straightness requirements for the chip edge are also getting higher and higher. Chips with uneven edges after cutting will cause certain process difficulties for subsequent packaging and reduce the success rate of packaging; and they are easily misdetected as double crystal abnormalities by AOI (Automated Optical Inspection, the full name in Chinese is automatic optical inspection) during appearance inspection, affecting the production rhythm. Summary of the invention

[0005] In view of the above-mentioned shortcomings of the prior art, the present invention improves the design of the laser light group so that when the laser beam is focused inside the substrate, a deeper laser cutting line is formed to improve the straightness of the chip edge during chip splitting.

[0006] To achieve the above-mentioned object and other related objects, the present invention provides a light-emitting diode, which includes a substrate and a semiconductor stacking layer formed on the surface of the substrate, wherein the semiconductor stacking layer includes a first semiconductor layer, an active layer, and a second semiconductor layer arranged in sequence;

[0007] A first laser cutting line is formed inside the substrate, and the first laser cutting line includes a plurality of laser holes arranged at intervals. The longitudinal section of the laser hole through the center point is an ellipse, and the major axis of the ellipse is parallel to the thickness direction of the substrate, and the minor axis of the ellipse is perpendicular to the major axis; wherein 15≤major axis length L1 / minor axis length L2≤50.

[0008] The present invention also provides a method for manufacturing a light emitting diode, comprising the following steps:

[0009] Providing a substrate, depositing a semiconductor stacking layer on the surface of the substrate, wherein the semiconductor stacking layer comprises a first semiconductor layer, an active layer, and a second semiconductor layer arranged in sequence;

[0010] A laser beam is provided to focus inside the substrate, and the laser beam is moved inside the substrate to form a first laser cutting line; the first laser cutting line includes a plurality of laser holes arranged at intervals, and the longitudinal section of the laser hole through the center point is an ellipse, the major axis of the ellipse is parallel to the thickness direction of the substrate, and the minor axis of the ellipse is perpendicular to the major axis; wherein 15≤major axis length L1 / minor axis length L2≤50.

[0011] The present invention also provides an LED core particle, which is obtained through a hidden cutting process and a splitting process. The hidden cutting process obtains a light-emitting diode with a first laser cutting line through the manufacturing method. The splitting process splits the light-emitting diode along the first laser cutting line to obtain a single LED core particle.

[0012] As described above, the present invention provides a light-emitting diode and a manufacturing method, and an LED core particle. A first laser cutting line is formed in the substrate of the light-emitting diode by a laser hidden cutting process. The first laser cutting line includes a plurality of laser holes arranged at intervals. The present invention increases the penetration path of the laser in the substrate, so that a narrower laser hole is finally formed when focusing on the inside of the substrate, forming a first laser cutting line that is deeper. The internal scratches with increased depth are conducive to the release of laser heat energy to the outside world as soon as possible, reducing the internal influence of heat energy on the processed object, thereby improving the processing straightness and reducing burrs, edge collapse and other problems. At the same time, the deeper internal scratches also reduce the bonding force between the connected chips, which is more conducive to the splitting to obtain a straight chip edge. In addition, the narrow and long laser hole has a more gentle side circumference, and after the splitting, a relatively shallow pit will be left on the side wall of a single core particle, which will not cause excessive erosion to the side wall of the core particle, thereby improving the anti-fracture performance of the light-emitting diode and reducing the risk of the core particle breaking along the pit. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a side view structural schematic diagram of depositing a semiconductor stacking layer on the surface of a substrate in the first embodiment of the present invention.

[0014] Figure 2 It is a schematic diagram of the side view structure of the first electrode and the second electrode in the first embodiment of the present invention.

[0015] Figure 3 It is a schematic side view of the structure of forming a reflective layer in the first embodiment of the present invention.

[0016] Figure 4 It is a side view structural schematic diagram of forming a first laser cutting line in the first embodiment of the present invention.

[0017] Figure 5 It is an enlarged schematic diagram of the side view structure of forming the first laser cutting line in the first embodiment of the present invention.

[0018] Figure 6 It shows a schematic diagram of the structure of a single core particle after splitting in Example 1 of the present invention.

[0019] Figure 7 It is a side view structural schematic diagram of depositing a semiconductor stacking layer on the surface of a substrate in the second embodiment of the present invention.

[0020] Figure 8 It is a schematic diagram of the side structure of the first contact electrode and the second contact electrode in the second embodiment of the present invention.

[0021] Fig. 9 It is a schematic diagram of the side view structure of the first pad electrode and the second pad electrode in the second embodiment of the present invention.

[0022] Fig.10 It is a side view structural schematic diagram of forming a first laser cutting line in the second embodiment of the present invention.

[0023] Fig.11 It shows a schematic diagram of the structure of a single core particle after splitting in Example 2 of the present invention.

[0024] Fig.12 Shown is a schematic diagram of a laser light group in the prior art.

[0025] Fig.13 Shown is a schematic diagram of the laser light group of the present invention.

[0026] Fig.14 Shown is a schematic side view of an internal scratch in the prior art.

[0027] Fig.15 Shown is a schematic side view of an internal scratch of the present invention.

[0028] Fig.16 The diagram shows the edge of a chip after splitting in the prior art.

[0029] Fig.17 Shown is a schematic diagram of the chip edge after splitting according to the present invention.

[0030] Component number description

[0031] 100 substrates

[0032] 101 First semiconductor layer

[0033] 102 Active layer

[0034] 103 Second semiconductor layer

[0035] 111 first contact electrode

[0036] 112 second contact electrode

[0037] 104 Insulation layer

[0038] 121 first pad electrode

[0039] 122 second pad electrode

[0040] 20 First laser cutting line

[0041] 210 Laser Hole

[0042] 131 First Electrode

[0043] 132 second electrode

[0044] 301 Reflection layer DETAILED DESCRIPTION

[0045] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0046] For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic view is only an example, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional space dimensions of length, width and depth should be included.

[0047] For ease of description, spatial relational terms such as "under", "below", "below", "below", "above", "on", etc. may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatial relational terms are intended to include other directions of the device in use or operation in addition to the directions depicted in the drawings. In addition, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or there can be one or more intervening layers. As used herein, "between..." means including the end point values.

[0048] In the context of the present application, a structure in which a first feature is described as being "above" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0049] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and therefore the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0050] Embodiment 1

[0051] Take the regular chip as an example. Figures 1 to 6 As shown, this embodiment provides a method for manufacturing a light emitting diode, comprising the following steps:

[0052] S1: Provide a substrate 100, such as Figure 1 As shown, a semiconductor stack layer is epitaxially deposited on the upper surface of a substrate 100, and the semiconductor stack layer may include a first semiconductor layer 101 (which may be an N-type semiconductor layer), an active layer 102, and a second semiconductor layer 103 (which may be a P-type semiconductor layer) arranged in sequence. The first semiconductor layer 101, the active layer 102, and the second semiconductor layer 103 are only the basic constituent units of the semiconductor stack layer. In addition, other epitaxial layer structures may also be included, such as a superlattice stress buffer layer, an electron blocking layer, etc., to optimize the light-emitting performance. The semiconductor stack layer is obtained by epitaxial deposition, and its specific materials include but are not limited to aluminum gallium arsenide, gallium arsenide phosphide, aluminum gallium indium phosphide, gallium nitride, indium gallium nitride, zinc selenide or gallium phosphide.

[0053] The substrate 100 may be a transparent or translucent material, wherein the transparent substrate or the translucent substrate may allow the light radiated from the active layer 102 to pass through the substrate 100 and reach the side of the substrate 100 away from the semiconductor stack layer. For example, the substrate 100 may be any one of a sapphire flat substrate, a sapphire patterned substrate, a silicon substrate, a silicon carbide substrate, a gallium nitride substrate, and a glass substrate.

[0054] S2: Figure 2 As shown, a first step is formed by removing a portion of the second semiconductor layer 103 and the active layer 102 through an etching process, and the first step reveals the first semiconductor layer 101; a first electrode 131 is formed on the surface of the first step, and the first electrode 131 is electrically connected to the first semiconductor layer 101; a second electrode 132 is formed on the surface of the second semiconductor layer 103 away from the first semiconductor layer 101, and the second electrode 132 is electrically connected to the second semiconductor layer 103.

[0055] The materials of the first electrode 131 and the second electrode 132 are selected from metals such as gold (Au), silver (Ag), copper (Cu), chromium (Cr), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), tin (Sn), rhodium (Rh), etc., alloys or stacks of the above materials.

[0056] S3: Figure 3 As shown, a reflective layer 301 is formed on the lower surface of the substrate 100 away from the semiconductor stacking layer, and the reflective layer 301 is used to reflect the light emitted by the active layer, so as to achieve front light emission. The reflective layer 301 can be a DBR, that is, a multilayer structure formed by alternating two materials with different refractive indices, such as a stacked combination of silicon dioxide + titanium dioxide, or a stacked combination of silicon dioxide + titanium pentoxide.

[0057] S4: Figure 4 As shown, a laser beam is focused inside the substrate 100, and the laser beam is moved to form a first laser cutting line 20 inside the substrate 100;

[0058] Specifically, the laser beam is incident into the substrate 100 along the vertical direction, and moves in a horizontal or vertical linear direction to form a plurality of first laser cutting lines 20 that cross each other. The first laser cutting lines 20 include a plurality of laser holes 210 arranged at intervals, such as Figure 5 As shown, the longitudinal section of the laser hole 210 through the center point is an ellipse, the major axis of the ellipse is parallel to the thickness direction of the substrate 100, and the minor axis of the ellipse is perpendicular to the major axis. Among them, 15≤major axis length L1 / minor axis length L2≤50, 30μm≤major axis length L1≤45μm, 1μm≤minor axis length L2≤2μm.

[0059] Specifically, an optical system is used to focus the pulsed laser beam to a point inside the wafer. When the laser beam reaches the peak power density at the focus, the wafer absorbs energy and forms a hole. The existing laser light source needs to pass through a beam expander, specifically, it first diverges through a concave lens and then converges through a convex lens to form the laser beam. Compared with the existing laser light group (such as Fig.12 As shown in FIG. 1 , this embodiment increases the distance f2 between the beam expanders in the laser light path (as shown in FIG. Fig.13 As shown), the laser spot irradiated on the inside of the substrate becomes smaller, while increasing the penetration path of the laser in the substrate, that is, reducing D1, so that a narrower laser hole is formed when focusing on the inside of the substrate 100, and finally a first laser cutting line 20 with a larger depth is formed.

[0060] Compared with the existing technical solutions (such as Fig.14 As shown in FIG. 1 , the depth of the first laser cutting line formed by adjusting the lens light group and increasing the penetration path in this embodiment also increases accordingly (as shown in FIG. 1 ). Fig.15 As shown in the figure, the deeper internal scratches are conducive to the release of laser heat energy to the outside world as soon as possible, reducing the internal impact of heat energy on the processed object, thereby improving the processing straightness and reducing burrs, edge collapse and other problems. At the same time, deeper internal scratches also reduce the bonding force between connected chips, which is more conducive to splitting and obtaining straight chips.

[0061] Furthermore, this embodiment also specifically defines the location of the first laser cutting line, such as Figure 5 As shown, the distance between the center of the first laser cutting line 20 in the vertical direction (i.e., the center of the laser hole 210) and the lower surface of the substrate is D1, and the thickness of the substrate is D2, 0.1≤D1 / D2≤0.5. Furthermore, when the thickness range of the substrate 100 is 100μm≤D2≤200μm, the thickness range of D1 is 15μm≤D1≤45μm. The height of the laser hole 210 in the vertical direction is 30μm, and the upper edge of the first laser cutting line 20 (i.e., the upper edge of the laser hole 210) is not less than 80μm from the upper surface of the substrate, that is, in the thickness direction, the first laser cutting line 20 is located in the middle and lower position, which increases the laser penetration path in the substrate, is more conducive to cracking and avoids damage to the semiconductor stack layer above.

[0062] Furthermore, before step S4, a film laminating process is also included, in which the surface of the substrate away from the semiconductor stack layer is laminated to the white film, specifically, the electrode surface is laminated to the white film. After step S4, a chipping process is also included, in which a chipping machine is used to chip the substrate to obtain individual LED core particles. Since a first laser cutting line 20 is formed inside the substrate 100 by step S4 before chipping, the edges of the single core particles obtained by chipping are regular and straight, which is different from the existing chipping morphology (such as Fig.16 As shown), the straightness is greatly improved, avoiding edge burrs and linear bending (as shown Fig.17 After the film is split, the process also includes mold inversion, film expansion and other processes, followed by testing, which will not be described in detail here.

[0063] Based on the above manufacturing method, this embodiment also provides a light emitting diode. It should be noted that the light emitting diode can be obtained by the above manufacturing method, but is not limited to the above manufacturing method. Figures 4 to 6 As shown, the light emitting diode comprises:

[0064] A substrate 100, a semiconductor stacking layer is deposited on the surface of the substrate 100, a reflective layer 301 is formed on the surface of the substrate 100 away from the semiconductor stacking layer, and the semiconductor stacking layer includes a first semiconductor layer 101 (which can be an N-type semiconductor layer), an active layer 102, and a second semiconductor layer 103 (which can be a P-type semiconductor layer) arranged in sequence.

[0065] A first laser cutting line 20 is formed inside the substrate 100. The first laser cutting line 20 includes a plurality of laser holes 210 arranged at intervals. The longitudinal section of the laser hole 210 through the center point is an ellipse. The major axis of the ellipse is parallel to the thickness direction of the substrate 100, and the minor axis of the ellipse is perpendicular to the major axis. Among them, 15≤major axis length L1 / minor axis length L2≤50, 30μm≤major axis length L1≤45μm, and 1μm≤minor axis length L2≤2μm.

[0066] Furthermore, the distance between the center of the first laser cutting line 20 in the vertical direction (i.e., the center of the laser hole 210) and the lower surface of the substrate is D1, the thickness of the substrate is D2, 0.1≤D1 / D2≤0.5, and further, when the thickness range of the substrate 100 is 100μm≤D2≤200μm, the thickness range of D1 is 15μm≤D1≤45μm. The height of the laser hole 210 in the vertical direction is 30μm, and the upper edge of the first laser cutting line 20 (i.e., the upper edge of the laser hole 210) is not less than 80μm from the upper surface of the substrate, that is, in the thickness direction, the first laser cutting line 20 is located in the middle and lower position, which increases the laser penetration path in the substrate, is more conducive to cracking and avoids damage to the semiconductor stack layer above.

[0067] Furthermore, the semiconductor stack layer has a first step, and the active layer 102 and the second semiconductor layer above the first step are removed to reveal the first semiconductor layer 101; a first electrode 131 is formed on the surface of the first step, and the first electrode 131 is electrically connected to the first semiconductor layer 101; a second electrode 132 is formed on the surface of the second semiconductor layer 103 away from the first semiconductor layer 101, and the second electrode 132 is electrically connected to the second semiconductor layer 103.

[0068] Embodiment 2

[0069] Take flip chip as an example, Figures 7 to 11 As shown, this embodiment provides a method for manufacturing a light emitting diode, comprising the following steps:

[0070] S1: Provide a substrate 100, such as Figure 7 As shown, a semiconductor stack layer is epitaxially deposited on the surface of a substrate 100, and the semiconductor stack layer may include a first semiconductor layer 101 (which may be an N-type semiconductor layer), an active layer 102, and a second semiconductor layer 103 (which may be a P-type semiconductor layer) arranged in sequence. The first semiconductor layer 101, the active layer 102, and the second semiconductor layer 103 are only the basic constituent units of the semiconductor stack layer. In addition, other epitaxial layer structures may also be included, such as a superlattice stress buffer layer, an electron blocking layer, etc., to optimize the light-emitting performance. The semiconductor stack layer is obtained by epitaxial deposition, and its specific materials include but are not limited to aluminum gallium arsenide, gallium arsenide phosphide, aluminum gallium indium phosphide, gallium nitride, indium gallium nitride, zinc selenide or gallium phosphide.

[0071] The substrate 100 may be a transparent or translucent material, wherein the transparent substrate or the translucent substrate may allow the light radiated from the active layer 102 to pass through the substrate 100 and reach the side of the substrate 100 away from the semiconductor stack layer. For example, the substrate 100 may be any one of a sapphire flat substrate, a sapphire patterned substrate, a silicon substrate, a silicon carbide substrate, a gallium nitride substrate, and a glass substrate.

[0072] S2: Figure 8 As shown, a first step is formed by removing a portion of the second semiconductor layer 103 and the active layer 102 through an etching process, and the first step reveals the first semiconductor layer 101; a first contact electrode 111 is formed on the surface of the first step, and the first contact electrode 111 is electrically connected to the first semiconductor layer 101; a second contact electrode 112 is formed on the surface of the second semiconductor layer 103 away from the first semiconductor layer 101, and the second contact electrode 112 is electrically connected to the second semiconductor layer 103.

[0073] S3: Fig. 9As shown, an insulating layer 104 is coated on the surface of the substrate 100, and the insulating layer 104 covers the sidewalls and upper surfaces of the semiconductor stack layer, and the sidewalls and upper surfaces of the contact electrodes; the insulating layer 104 has an opening to expose the first contact electrode 111 and the second contact electrode 112. The first pad electrode 121 and the second pad electrode 122 are formed on the insulating layer 104 by photolithography and evaporation processes, and the first pad electrode 121 is electrically connected to the first contact electrode 111 through the opening penetrating the insulating layer 104, and the second pad electrode 122 is electrically connected to the second contact electrode 112 through the opening penetrating the insulating layer 104.

[0074] The material of the insulating layer 104 includes a non-conductive material. The non-conductive material is preferably an inorganic material or a dielectric material. The inorganic material includes silica gel or glass, and the dielectric material includes aluminum oxide, silicon nitride, silicon oxide, titanium oxide, or magnesium fluoride. For example, the insulating layer 104 can be silicon dioxide, silicon nitride, titanium oxide, tantalum oxide, niobium oxide, barium titanate, or a combination thereof, and the combination thereof can be, for example, a Bragg reflector (DBR) formed by repeatedly stacking two materials. In some embodiments, the insulating layer 104 is preferably a reflective insulating layer, which can effectively improve the light extraction efficiency of the light-emitting diode.

[0075] S4: Fig.10 As shown, a laser beam is focused inside the substrate 100, and the laser beam is moved to form a first laser cutting line 20 inside the substrate 100;

[0076] Specifically, the laser beam is incident into the substrate 100 along the vertical direction, and moves in a horizontal or vertical linear direction to form a plurality of first laser cutting lines 20 that cross each other. The first laser cutting lines 20 include a plurality of laser holes 210 arranged at intervals, such as Figure 5 As shown, the longitudinal section of the laser hole 210 through the center point is an ellipse, the major axis of the ellipse is parallel to the thickness direction of the substrate 100, and the minor axis of the ellipse is perpendicular to the major axis. Among them, 15≤major axis length L1 / minor axis length L2≤50, 30μm≤major axis length L1≤45μm, 1μm≤minor axis length L2≤2μm.

[0077] Specifically, an optical system is used to focus the pulsed laser beam to a point inside the wafer. When the laser beam reaches the peak power density at the focus, the wafer absorbs energy and forms a hole. The existing laser light source needs to pass through a beam expander, specifically, it first diverges through a concave lens and then converges through a convex lens to form the laser beam. Compared with the existing laser light group (such as Fig.12 As shown in FIG. 1 , this embodiment increases the distance f2 between the beam expanders in the laser light path (as shown in FIG. Fig.13As shown), the laser spot irradiated on the inside of the substrate becomes smaller, while increasing the penetration path of the laser in the substrate, that is, reducing D1, so that a narrower laser hole is formed when focusing on the inside of the substrate 100, and finally a first laser cutting line 20 with a larger depth is formed.

[0078] Compared with the existing technical solutions (such as Fig.14 As shown in FIG. 1 , the depth of the first laser cutting line formed by adjusting the lens light group and increasing the penetration path in this embodiment also increases accordingly (as shown in FIG. 1 ). Fig.15 As shown in the figure, the deeper internal scratches are conducive to the release of laser heat energy to the outside world as soon as possible, reducing the internal impact of heat energy on the processed object, thereby improving the processing straightness and reducing burrs, edge collapse and other problems. At the same time, the deeper internal scratches also reduce the bonding force between the connected chips, which is more conducive to the splitting and thus obtaining a straight chip edge.

[0079] Furthermore, this embodiment also specifically defines the location of the first laser cutting line, such as Fig.11 As shown, the distance between the center of the first laser cutting line 20 in the vertical direction (i.e., the center of the laser hole 210) and the lower surface of the substrate is D1, and the thickness of the substrate is D2, 0.1≤D1 / D2≤0.5. Furthermore, when the thickness range of the substrate 100 is 100μm≤D2≤200μm, the thickness range of D1 is 15μm≤D1≤45μm. The height of the laser hole 210 in the vertical direction is 30μm, and the upper edge of the first laser cutting line 20 (i.e., the upper edge of the laser hole 210) is not less than 80μm from the upper surface of the substrate, that is, in the thickness direction, the first laser cutting line 20 is located in the middle and lower position, which increases the laser penetration path in the substrate, is more conducive to cracking and avoids damage to the semiconductor stack layer above.

[0080] Furthermore, before step S4, a film laminating process is also included, in which the surface of the substrate away from the semiconductor stack layer is laminated to the white film, specifically, the electrode surface is laminated to the white film. After step S4, a chipping process is also included, in which a chipping machine is used to chip the substrate to obtain individual LED core particles. Since a first laser cutting line 20 is formed inside the substrate 100 by step S4 before chipping, the edges of the single core particles obtained by chipping are regular and straight, which is different from the existing chipping morphology (such as Fig.16 As shown), the straightness is greatly improved, avoiding edge burrs and linear bending (as shown Fig.17 After the film is split, the process also includes mold inversion, film expansion and other processes, followed by testing, which will not be described in detail here.

[0081] Based on the above manufacturing method, this embodiment also provides a light emitting diode, which can be obtained by the above manufacturing method, but is not limited to the above manufacturing method. Figure 10 to Figure 11 As shown, the light emitting diode comprises:

[0082] The substrate 100 has a semiconductor stacking layer deposited on its surface. The semiconductor stacking layer includes a first semiconductor layer 101 (which may be an N-type semiconductor layer), an active layer 102, and a second semiconductor layer 103 (which may be a P-type semiconductor layer) arranged in sequence.

[0083] A first laser cutting line 20 is formed inside the substrate 100. The first laser cutting line 20 includes a plurality of laser holes 210 arranged at intervals. The longitudinal section of the laser hole 210 through the center point is an ellipse. The major axis of the ellipse is parallel to the thickness direction of the substrate 100, and the minor axis of the ellipse is perpendicular to the major axis. Among them, 15≤major axis length L1 / minor axis length L2≤50, 30μm≤major axis length L1≤45μm, and 1μm≤minor axis length L2≤2μm.

[0084] Furthermore, the distance between the center of the first laser cutting line 20 in the vertical direction (i.e., the center of the laser hole 210) and the lower surface of the substrate is D1, the thickness of the substrate is D2, 0.1≤D1 / D2≤0.5, and further, when the substrate thickness range is 100μm≤D2≤200μm, the thickness range of D1 is 15μm≤D1≤45μm. That is, in the thickness direction, the first laser cutting line 20 is located in the middle and lower position, which is more conducive to splitting and avoids damage to the semiconductor stack layer above.

[0085] Furthermore, the semiconductor stacking layer has a first step, and the active layer 102 and the second semiconductor layer above the first step are removed to reveal the first semiconductor layer 101; a first contact electrode 111 is formed on the surface of the first step, and the first contact electrode 111 is electrically connected to the first semiconductor layer 101; a second contact electrode 112 is formed on the surface of the second semiconductor layer 103 away from the first semiconductor layer 101, and the second contact electrode 112 is electrically connected to the second semiconductor layer 103.

[0086] Furthermore, the light emitting diode further comprises an insulating layer 104, the insulating layer 104 covers the sidewalls and upper surface of the semiconductor stack layer 120, and the sidewalls and upper surface of the contact electrode; the insulating layer 104 has an opening to expose the first contact electrode 111 and the second contact electrode 112. A first pad electrode 121 and a second pad electrode 122 are formed on the insulating layer 104, the first pad electrode 121 is electrically connected to the first contact electrode 111 through the opening penetrating the insulating layer 104, and the second contact electrode 112 is electrically connected to the second contact electrode 112 through the opening penetrating the insulating layer 104.

[0087] In summary, the present invention provides a light-emitting diode and a manufacturing method, and an LED core particle. A first laser cutting line is formed in the substrate of the light-emitting diode by a laser hidden cutting process. The first laser cutting line includes a plurality of laser holes arranged at intervals. The present invention increases the penetration path of the laser in the substrate, so that a narrower laser hole is finally formed when focusing on the inside of the substrate, forming a first laser cutting line that is deeper. The internal scratches with increased depth are conducive to the release of laser heat energy to the outside world as soon as possible, reducing the internal influence of heat energy on the processed object, thereby improving the processing straightness and reducing burrs, edge collapse and other problems. At the same time, the deeper internal scratches also reduce the bonding force between the connected chips, which is more conducive to the splitting to obtain a straight chip edge. In addition, the narrow laser hole has a more gentle side circumference, and after the splitting, a relatively shallow pit will be left on the side wall of a single core particle, which will not cause excessive erosion to the side wall of the core particle, thereby improving the anti-fracture performance of the light-emitting diode and preventing the core particle from being broken along the pit.

[0088] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A light emitting diode, characterized in that: The light emitting diode comprises a substrate and a semiconductor stacking layer formed on a surface of the substrate, wherein the semiconductor stacking layer comprises a first semiconductor layer, an active layer, and a second semiconductor layer arranged in sequence; A first laser cutting line is formed inside the substrate, and the first laser cutting line includes a plurality of laser holes arranged at intervals. The longitudinal section of the laser hole through the center point is an ellipse, and the major axis of the ellipse is parallel to the thickness direction of the substrate, and the minor axis of the ellipse is perpendicular to the major axis; wherein 15≤major axis length L1 / minor axis length L2≤50.

2. The light emitting diode according to claim 1, characterized in that: 30μm≤major axis length L1≤45μm.

3. The light emitting diode according to claim 1, characterized in that: 1μm≤minor axis length L2≤2μm.

4. The light emitting diode according to claim 1, characterized in that: The distance between the center of the first laser cutting line in the vertical direction and the lower surface of the substrate is D1, the thickness of the substrate is D2, and 0.1≤D1 / D2≤0.

5.

5. The light emitting diode according to claim 4, characterized in that: D2 thickness range is 100μm≤D2≤200μm, The thickness range of D1 is 15μm≤D1≤45μm.

6. The light emitting diode according to claim 1, characterized in that: The upper edge of the first laser cutting line is not less than 80 μm away from the upper surface of the substrate.

7. The light emitting diode according to claim 1, characterized in that: The semiconductor stacking layer has a first step, a first electrode is formed on the surface of the first step, and the first electrode is electrically connected to the first semiconductor layer; a second electrode is formed on the surface of the second semiconductor layer away from the first semiconductor layer, and the second electrode is electrically connected to the second semiconductor layer.

8. The light emitting diode according to claim 1, characterized in that: The light emitting diode further includes a reflective layer, and the reflective layer is located on a surface of the substrate away from the semiconductor stacking layer.

9. A method for manufacturing a light emitting diode, characterized in that: The steps include: Providing a substrate, depositing a semiconductor stacking layer on a surface of the substrate, wherein the semiconductor stacking layer comprises a first semiconductor layer, an active layer, and a second semiconductor layer arranged in sequence; A laser beam is provided to focus inside the substrate, and the laser beam is moved to form a first laser cutting line inside the substrate; the first laser cutting line includes a plurality of laser holes arranged at intervals, and the longitudinal section of the laser hole through the center point is an ellipse, the major axis of the ellipse is parallel to the thickness direction of the substrate, and the minor axis of the ellipse is perpendicular to the major axis; wherein 15≤major axis length L1 / minor axis length L2≤50.

10. The method for manufacturing a light emitting diode according to claim 9, characterized in that: 30μm≤major axis length L1≤45μm.

11. The method for manufacturing a light emitting diode according to claim 9, characterized in that: 1μm≤minor axis length L2≤2μm.

12. The method for manufacturing a light emitting diode according to claim 1, characterized in that: The distance between the center of the first laser cutting line in the vertical direction and the lower surface of the substrate is D1, the thickness of the substrate is D2, and 0.1≤D1 / D2≤0.

5.

13. The method for manufacturing a light emitting diode according to claim 12, characterized in that: The thickness range of D2 is 100μm≤D2≤200μm, and the thickness range of D1 is 15μm≤D1≤45μm.

14. The light emitting diode according to claim 9, characterized in that: The upper edge of the first laser cutting line is not less than 80 μm from the upper surface of the substrate.

15. The method for manufacturing a light emitting diode according to claim 9, characterized in that: After depositing the semiconductor stack layer on the surface of the substrate, the method further comprises: The second semiconductor layer and the active layer are partially removed through an etching process to form a first step, and the first step exposes the first semiconductor layer; a first electrode is formed on the surface of the first step, and the first electrode is electrically connected to the first semiconductor layer; a second electrode is formed on the surface of the second semiconductor layer away from the first semiconductor layer, and the second electrode is electrically connected to the second semiconductor layer.

16. The method for manufacturing a light emitting diode according to claim 9, characterized in that: A reflective layer is formed on a surface of the substrate away from the semiconductor stacking layer.

17. An LED chip, characterized in that: The LED core particles are obtained through hidden cutting process and splitting process. The hidden cutting process obtains a light-emitting diode with a first laser cutting line through the manufacturing method described in any one of claims 9-16. The splitting process splits the light-emitting diode along the first laser cutting line to obtain a single LED core particle.

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