Film forming apparatus, mask, film forming method, and method for manufacturing electronic device

Abstract

The invention relates to a film forming apparatus, a mask, a film forming method, and a method for manufacturing an electronic device, and provides a technology capable of improving the adhesion between a substrate and the mask even if the mask includes a portion with low rigidity. A film forming apparatus that forms a film on a substrate via a mask having: a pattern part on which a predetermined pattern is formed; a frame part which is used for supporting the pattern part; and a magnetic body provided on the pattern portion, the film forming apparatus having a magnetic attraction member that is disposed so as to face the mask across the substrate and attracts the magnetic body.

Description

Technical Field

[0001] The present invention relates to a film forming apparatus, a mask, a film forming method and a method for manufacturing an electronic device. Background Art

[0002] The following technology is known: a substrate and a mask are aligned, and then a film is formed on the substrate through the mask. The film formation is performed in a state where the aligned substrate and the mask are in close contact with each other. In order to make the substrate and the mask in close contact, a technology using magnetic force is known. For example, a substrate is arranged between a mask and a magnetic plate, and the magnetic force between the mask and the magnetic plate is used to make the substrate and the mask in close contact (for example, Patent Document 1).

[0003] Prior Art Literature

[0004] Patent Literature

[0005] Patent Document 1: International Publication No. 2017 / 222009 Pamphlet Summary of the invention

[0006] Problems to be solved by the invention

[0007] The rigidity of the pattern portion of the mask for forming a pattern on the substrate may be lower than the frame portion supporting the pattern portion. When the mask includes a portion with low rigidity, the adhesion between the substrate and the mask may be reduced.

[0008] The present invention provides a technology capable of improving the adhesion between a substrate and a mask even when the mask includes a portion with low rigidity.

[0009] Means for solving problems

[0010] According to the present invention, there is provided a film forming device for forming a film on a substrate via a mask, wherein:

[0011] The mask comprises:

[0012] a pattern portion, wherein the pattern portion is formed with a prescribed pattern;

[0013] a frame portion that supports the pattern portion; and

[0014] a magnetic body, wherein the magnetic body is arranged on the pattern portion,

[0015] The film forming device includes a magnetic attraction member that is disposed opposite to the mask with the substrate interposed therebetween and that attracts the magnetic body.

[0016] According to the present invention, there is provided a mask used in a film forming device for forming a film in a predetermined pattern on a substrate, wherein:

[0017] The mask comprises:

[0018] a pattern portion, wherein the pattern portion is formed with a prescribed pattern;

[0019] A magnetic body provided on the pattern portion adsorbed by a magnetic adsorption member of a film forming device disposed across the substrate; and

[0020] A frame portion supports the pattern portion.

[0021] According to the present invention, there is provided a film forming method for forming a film on a substrate via a mask, wherein:

[0022] The mask comprises:

[0023] a pattern portion, wherein the pattern portion is formed with a prescribed pattern;

[0024] a frame portion that supports the pattern portion; and

[0025] a magnetic body, wherein the magnetic body is arranged on the pattern portion,

[0026] The film forming method includes a magnetic attraction step in which the magnetic body is attracted so as to be arranged to face the mask with the substrate interposed therebetween.

[0027] Furthermore, according to the present invention, there is provided a method for manufacturing an electronic device, characterized in that the method includes a film forming step of forming a film on a substrate using the above-mentioned film forming apparatus.

[0028] Effects of the Invention

[0029] According to the present invention, even when the mask includes a portion with low rigidity, the adhesion between the substrate and the mask can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 A schematic diagram of a portion of a production line for electronic devices.

[0031] Figure 2 This is a schematic diagram of a film forming apparatus according to one embodiment of the present invention.

[0032] Figure 3 It is a three-dimensional diagram of the magnetic adsorption unit, substrate, and mask.

[0033] Figure 4(A) is Figure 3 FIG4(B) is a cross-sectional view taken along line AA of FIG4(A), and FIG4(B) is a cross-sectional view taken along line B of FIG4(A).

[0034] Figure 5 yes Figure 2A partial enlarged view of .

[0035] Figure 6 (A) and (B) are Figure 2 A diagram illustrating the operation of the film forming device.

[0036] Figure 7 (A) and (B) are Figure 2 A diagram illustrating the operation of the film forming device.

[0037] Figure 8 (A) and (B) are Figure 2 A diagram illustrating the operation of the film forming device.

[0038] Figure 9 (A) and (B) are Figure 2 A diagram illustrating the operation of the film forming device.

[0039] Figure 10 (A) and (B) are Figure 2 A diagram illustrating the operation of the film forming device.

[0040] 11(A) to (C) are plan views showing an example of arrangement of magnetic bodies.

[0041] Fig.12 It is a three-dimensional image and a partial enlarged image of the mask.

[0042] Fig.13 It is a diagram showing a structural example of a magnetic attraction portion.

[0043] FIG. 14(A) is a diagram showing an overall view of an organic EL display device, and FIG. 14(B) is a diagram showing a cross-sectional structure of one pixel.

[0044] Description of Reference Numerals

[0045] 1 film forming device, 2 substrate, 3 mask, 13 magnetic attraction part, 30 pattern part, 31 frame part, 32 magnetic body. DETAILED DESCRIPTION

[0046] The following embodiments are described in detail with reference to the accompanying drawings. In addition, the following embodiments do not limit the technical solutions of the claims. Although multiple features are described in the embodiments, not all of the multiple features are necessarily required features of the invention. In addition, multiple features can also be combined arbitrarily. Moreover, in the accompanying drawings, the same or similar structures are marked with the same figure numbers, and repeated descriptions are omitted.

[0047] <First embodiment>

[0048] <Electronic device production line>

[0049] Figure 1Schematic diagram showing a part of the structure of a production line 100 of electronic devices to which the film forming apparatus of the present invention can be applied. In each figure, arrows X and Y indicate mutually orthogonal horizontal directions, and arrow Z indicates the up-down direction (gravity direction). Figure 1 The production line 100 is used, for example, for manufacturing light-emitting elements of an organic EL display device. The production line 100 includes a transfer chamber 102 having an octagonal shape in a plan view. The substrate 2 is transferred from a transfer path 101a to the transfer chamber 102, and the substrate 2 after film formation is transferred from the transfer chamber 102 to the transfer path 101b.

[0050] A plurality of film forming apparatuses 1 for forming a film on a substrate 2 are arranged around the transfer chamber 102. A transfer chamber 103 is arranged adjacent to each film forming apparatus 1. A storage chamber 104 for storing a mask 3 is arranged around the transfer chamber 103 having an octagonal shape in a plan view.

[0051] The transport unit 105 for transporting the substrate 2 is arranged in the transport chamber 102. The transport unit 105 of this embodiment is a horizontal multi-joint robot, which carries the substrate 2 in a horizontal posture on its hand and transports it. The transport unit 105 performs a transport operation of transporting the substrate 2 transported from the transport path 101a to the film forming device 1 and a transport operation of transporting the substrate 2 after film formation in the film forming device 1 from the film forming chamber 1 to the transport path 101b.

[0052] Each transfer chamber 103 is provided with a transfer unit 106 for transferring the mask 3. The transfer unit 106 of this embodiment is a horizontal multi-joint robot, which carries the mask 3 in a horizontal posture on its hand and transfers it. The transfer unit 106 performs the operation of transferring the mask 3 from the storage chamber 104 to the film forming device 1 and the operation of transferring the mask 3 from the film forming device 1 to the storage chamber 104.

[0053] <Film forming equipment>

[0054] Figure 2 This is a schematic diagram of a film forming apparatus 1 according to an embodiment of the present invention. The film forming apparatus 1 is an apparatus for forming a film of a vapor deposition substance on a substrate 2, and a thin film of the vapor deposition substance in a predetermined pattern is formed using a mask 3. The material of the substrate 2 on which the film is formed in the film forming apparatus 1 can be appropriately selected from materials such as glass, resin, and metal. In particular, in this embodiment, the substrate 2 is, for example, a glass substrate on which a TFT (Thin Film Transistor) is formed, or a semiconductor wafer (silicon wafer) on which a semiconductor element is formed.

[0055] The evaporation material includes organic materials, inorganic materials (metals, metal oxides, etc.), etc. The film forming device 1 can be applied to, for example, a manufacturing device for manufacturing electronic devices such as display devices (flat panel displays, etc.), thin-film solar cells, organic photoelectric conversion elements (organic thin-film imaging elements), optical components, etc., and can be applied to a manufacturing device for manufacturing organic EL panels in particular. In the following description, an example is described in which the film forming device 1 forms a film on the substrate 2 by vacuum evaporation, but the present invention is not limited to this, and various film forming methods such as sputtering, CVD, and ALD can be applied.

[0056] The film forming apparatus 1 has a box-shaped vacuum chamber 10. The internal space of the vacuum chamber 10 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen. In the present embodiment, the vacuum chamber 10 is connected to a vacuum pump (not shown). A vapor deposition unit 17 is arranged in the internal space of the vacuum chamber 10. The vapor deposition unit 17 has a vapor deposition source that discharges a vapor deposition material upward. A baffle 17a that limits and releases the discharge of the vapor deposition material is arranged above the vapor deposition unit 17. The baffle 17a is opened and closed by an opening and closing mechanism (not shown). Figure 2 The shutter 17a is shown in a closed state, which restricts the release of the vapor deposition material by the vapor deposition unit 17. In addition, an anti-adhesion plate 10b is arranged above the vapor deposition unit 17. The anti-adhesion plate 10b prevents the vapor deposition material from being unnecessarily attached to the following structure arranged in the upper part of the internal space of the vacuum chamber 10.

[0057] A substrate support plate 11 that supports the substrate 2 in a horizontal posture is provided in the internal space of the vacuum chamber 10. In the case of the present embodiment, the substrate support plate 11 is an electrostatic chuck, and the substrate 2 is adsorbed and held by electrostatic force on its lower surface. A cooling plate 12 is fixed to the substrate support plate 11. The cooling plate 12 has, for example, a water cooling mechanism, and cools the substrate 2 via the substrate support plate 11 during film formation.

[0058] The substrate support plate 11 and the cooling plate 12 are suspended via a support portion 13a on a magnetic adsorption portion 13 that can be displaced in the Z direction. The magnetic adsorption portion 13 is a member that attracts the mask 3 by magnetic force. The magnetic adsorption portion 13 is arranged at a position facing the mask across the substrate 2. Since the substrate 2 is sandwiched between the magnetic adsorption portion 13 and the mask 3 by magnetic force during film formation, the adhesion between the substrate 2 and the mask 3 can be improved.

[0059] The film forming device 1 includes a mask supporting unit 14 that supports the mask 3 during film forming. In the case of the present embodiment, the mask supporting unit 14 also performs the transfer operation of the substrate 2 between the conveying unit 121 and the substrate supporting plate 11. The mask supporting unit 14 includes a pair of supporting members 14a separated in the X direction. Each supporting member 14a is raised and lowered by a corresponding actuator 14b. In the present embodiment, an actuator 14b is provided for each supporting member 14a, but a pair of supporting members 14a may be raised and lowered by one actuator 14b. The actuator 14b is, for example, an electric cylinder or an electric ball screw mechanism. The supporting member 14a includes a claw portion F1 at its lower end portion. The peripheral edge portions of the substrate 2 and the mask 3 are placed on the claw portion F1. Figure 2 In the example of FIG. 1 , the mask 3 is placed on the claw portion F1. The pair of support members 14a are raised and lowered synchronously to raise and lower the substrate 2 and the mask 3. The claw portion F1 may have a mechanism for releasably holding the mask 3.

[0060] The film forming apparatus 1 includes an alignment unit 15 for aligning the substrate 2 and the mask 3. The alignment unit 15 includes a drive mechanism 150 and a plurality of measurement units SR. The drive mechanism 150 includes a distance adjustment unit 151, a support shaft 152, a stage 153, and a position adjustment unit 154.

[0061] The distance adjustment unit 151 is a mechanism for raising and lowering the support shaft 152 in the Z direction, and is provided with, for example, an electric cylinder or an electric ball screw mechanism. A magnetic adsorption unit 13 is fixed to the lower end of the support shaft 152, and by raising and lowering the support shaft 152, the substrate support plate 11 is raised and lowered via the magnetic adsorption unit 13. By raising and lowering the substrate support plate 11, the distance between the substrate 2 and the mask 3 is adjusted, so that the substrate 2 and the mask 3 supported on the substrate support plate 11 are brought close to or separated (separated) in the thickness direction (Z direction) of the substrate 2. In other words, the distance adjustment unit 151 brings the substrate 2 and the mask 3 close to each other in the overlapping direction or separates them in the opposite direction. In addition, the "distance" adjusted by the distance adjustment unit 151 is the so-called vertical distance (or plumb distance), and the distance adjustment unit 151 can also be said to be a unit for adjusting the vertical position of the substrate 2. The distance adjustment unit 151 is mounted on the position adjustment unit 154 via the stand 153.

[0062] The position adjustment unit 154 adjusts the relative position of the substrate 2 with respect to the mask 3 by displacing the substrate support plate 11 on the XY plane. That is, the position adjustment unit 150 can also be said to be a unit that adjusts the horizontal position of the mask 3 and the substrate 2. The position adjustment unit 80 can displace the substrate support plate 11 in the X direction, the Y direction, and the rotation direction (θ direction) around the axis in the Z direction. In the present embodiment, the position of the mask 3 is fixed and the substrate 2 is displaced to adjust their relative position, but the mask 3 can be displaced to adjust, or both the substrate 2 and the mask 3 can be displaced.

[0063] The position adjustment unit 154 includes a fixed plate 154a and a movable plate 154b. The fixed plate 154a and the movable plate 154b are rectangular frame-shaped plates, and the fixed plate 154a is fixed to the upper wall portion 10a of the vacuum chamber 10. An actuator is provided between the fixed plate 154a and the movable plate 154b to displace the movable plate 154b relative to the fixed plate 154a in the X direction, the Y direction, and the rotation direction around the axis in the Z direction.

[0064] A frame-shaped stand 153 is mounted on the movable plate 154b, and the stand 153 supports the distance adjustment unit 151. When the movable plate 84b is displaced, the stand 153 and the distance adjustment unit 151 are displaced integrally. As a result, the substrate 2 can be displaced in the X direction, the Y direction, and the rotation direction around the axis in the Z direction. An opening portion through which the support shaft 152 and the support members 14a and 14b pass is formed in the upper wall portion 10a. These opening portions are sealed by a sealing member (bellows, etc.) not shown in the figure to maintain the airtightness in the vacuum chamber 10.

[0065] The measuring unit SR measures the positional offset between the substrate 2 and the mask 3. The measuring unit SR of the present embodiment is a photographing device (camera) for photographing an image. The measuring unit SR is disposed on the upper wall portion 20 and is capable of photographing an image within the vacuum chamber 10. Alignment marks (not shown) are formed on the substrate 2 and the mask 3, respectively. The measuring unit SR photographs each alignment mark of the substrate 2 and the mask 3. The positional offset between the substrate 2 and the mask 3 is calculated based on the position of each alignment mark, and the relative position of the substrate 2 and the mask 3 is adjusted by the position adjustment unit 154 in such a manner as to eliminate the positional offset.

[0066] The control device 16 controls the entire film forming device 1. The control device 16 includes a processing unit 160, a storage unit 161, an input / output interface (I / O) 162, and a communication unit 163. The processing unit 160 is a processor represented by a CPU, and controls the film forming device 1 by executing a program stored in the storage unit 162. The storage unit 161 is a storage device such as a ROM, RAM, HDD, etc., and stores various control information in addition to the program executed by the processing unit 160. The I / O 162 is an interface for sending and receiving signals between the processing unit 160 and an external device. The communication unit 163 is a communication device that communicates with a host device or other control devices via a communication line.

[0067] <Configuration example of magnetic attraction unit, substrate, and mask>

[0068] Figure 3 An example of the magnetic adsorption part 13, the substrate 2, and the mask 3 in the present embodiment is shown. The magnetic adsorption part 13 is a circular magnet plate. In addition, the magnetic adsorption part 13 may also be, for example, an electromagnet. The magnetic adsorption part 13 has a plurality of openings 130. In the present embodiment, each opening 130 passes through the magnetic adsorption part 13 in the thickness direction. The plurality of openings 130 are shaped to correspond to the frame part 31 of the mask 3 described later. That is, in the present embodiment, the magnetic adsorption part 13 is formed in a lattice shape.

[0069] The substrate 2 is a circular silicon wafer, and after film formation, a plurality of chips 2a are cut out from the substrate 2. In the example shown in the figure, it is assumed that a matrix pattern of a plurality of pixels of a predetermined color (e.g., red, blue, or green) is formed on each chip 2a using the film forming apparatus 1.

[0070] The mask 3 is a circular member similar to the substrate 2. The mask 3 is made of a non-magnetic material such as silicon (Si). Since the mask 3 is made of silicon, the opening 303 can be formed finely and precisely by applying semiconductor manufacturing technology.

[0071] The mask 3 includes: a pattern portion 30, the pattern portion 30 being formed with a predetermined pattern; and a frame portion 31, the frame portion 31 supporting the pattern portion 30. A plurality of pattern portions 30 are formed on the mask 3. In the present embodiment, the frame portion 31 is formed in a lattice shape surrounding each of the plurality of pattern portions 30. The frame portion 31 may be formed in a predetermined shape based on the shape of the chip 2a cut out from the substrate 2, for example. In other words, the frame portion 31 may also be in a shape that matches the scribe line of the substrate 2.

[0072] The mask 3 will be described with reference to Fig. 4(A) and Fig. 4(B). Fig. 4(A) is a diagram corresponding to Figure 3As shown in FIG4(A), the frame portion 31 is a thick-walled portion having a relatively thick wall thickness, and the pattern portion 30 is a thin-walled portion having a relatively thin wall thickness. The frame portion 31 has a higher rigidity than the pattern portion 30. Thus, the pattern portion 30 can be formed to be thinner without significantly reducing the overall rigidity of the mask 3.

[0073] A magnetic body 32 is formed on the pattern portion 30. The magnetic body 32 may also be a thin film of a magnetic material. The magnetic material may be, for example, iron (Fe), cobalt (Co), nickel (Ni), etc. Since the magnetic body 32 is formed on the pattern portion 30, even if the mask 3 is made of silicon, which is a non-magnetic body, the mask 3 and the substrate 2 can be closely attached during film formation by the magnetic force of the magnetic adsorption portion 13. In addition, as described above, the pattern portion 30 is also a thin-walled portion with a relatively thin wall thickness. In other words, the pattern portion 30 is also a portion with lower rigidity than the frame portion. The portion of the mask 3 with lower rigidity is easy to relax, and is also a portion where the close contact between the mask 3 and the substrate 2 is easily reduced. Therefore, by providing the magnetic body 32 on the pattern portion 30, the close contact between the substrate 2 and the mask 3 can be improved. By improving the close contact between the substrate 2 and the mask 3, the vapor deposition material passing through the opening 303 can be accurately formed on the target portion of the substrate 101.

[0074] In addition, in the present embodiment, an example is shown in which the magnetic body 32 is provided on the lower surface S2 side of the mask 3, but the present invention is not limited thereto. The magnetic body 32 may be provided on the upper surface S1 side of the mask 3, for example. Alternatively, the magnetic body 32 may be provided on both the lower surface S2 side and the upper surface S1 side of the mask 3. The lower surface S2 of the mask 3 refers to the surface on the vapor deposition unit 17 side of the mask 3, and also refers to the surface of the mask 3 on the side opposite to the substrate 2 side. The upper surface S1 of the mask 3 is the surface on the substrate 2 side of the mask 3.

[0075] FIG4(B) shows a top view of the pattern portion 30 in the present embodiment. FIG4(B) is equivalent to the B-direction view of FIG4(A), and is also a diagram showing an example of each pattern portion 30 of a plurality of pattern portions 30. As shown in FIG4(B), the pattern portion 30 is formed in a rectangular shape when the mask 3 is viewed from above. The pattern portion 30 includes a pattern area 300 and a peripheral area 301 surrounding the pattern area 300. A plurality of openings (through holes) 303 are formed in the pattern area 300 for the vapor deposition material to pass through the substrate 2. The film formation pattern on the substrate 2 is defined by the configuration of the openings 303. The plurality of openings 303 form a matrix-like pattern. In other words, the pattern area 300 is also a portion where a plurality of openings 303 are gathered.

[0076] In the present embodiment, a magnetic body 32a is provided in the peripheral portion 301a in the X direction in the peripheral region 301. The magnetic body 32a is formed along the peripheral portion 301a. In addition, a magnetic body 32b is also provided in the peripheral portion 301b facing the peripheral portion 301a. The magnetic body 32b is formed along the peripheral portion 301b. In other words, the peripheral portions 301a and 301b are also the side portions of the pattern portion 30. By providing the magnetic body 32 in two opposite locations of the peripheral region 301, it is possible to Figure 5 Thus, the magnetic attraction portion 13 applies tension to the pattern portion 30. Therefore, even when the mask 3 has a portion with low rigidity such as the pattern portion 30, the adhesion between the mask 3 and the substrate 2 can be further improved.

[0077] Reference Figure 5 , a case where the mask 3 and the substrate 2 are brought into close contact with each other by the magnetic force of the magnetic attraction portion 13 will be described. Figure 5 Too Figure 2 A partial enlarged view of . Figure 5 The figure shows a state in which the substrate 2 is supported on the substrate support plate 11 and the mask 3 is brought into close contact with the substrate 2 by the magnetic force of the magnetic adsorption part 13. In the present embodiment, as described above, the magnetic adsorption part 13 has an opening 130 corresponding to the shape of the frame part 31. That is, it can also be said that the magnetic adsorption part 13 has an opening 130 between the magnetic body 32a and the magnetic body 32b provided in the peripheral area 301 of the mask 3. The magnetic adsorption part 13 includes: an adsorption part 130a, which is arranged outside the magnetic body 32a and adsorbs the magnetic body 32a; and an adsorption part 130b, which is arranged outside the magnetic body 32b and adsorbs the magnetic body 32b. As a result, the magnetic body 30a and the magnetic body 30b provided in the peripheral area 301 of the pattern part 30 are attracted, for example, by the magnetic force of the magnetic adsorption part 13 in the directions (D1, D2) of the arrows shown in the figure. As described above, since the magnetic attraction portion 13 has the opening portion 130 corresponding to the shape of the pattern portion 30 , the magnetic attraction portion 13 can bring the substrate 2 and the mask 3 into close contact while applying tension to the pattern portion 30 .

[0078] <Control Example>

[0079] An example of control of the film forming apparatus 1 executed by the processing unit 90 of the control unit 9 will be described. Figure 6(A) to Figure 10(B) This is an operation explanation diagram of the film forming apparatus 1 , and shows an example from the loading of the substrate 2 to the film formation and unloading.

[0080] FIG6(A) shows the state where the substrate 2 is carried into the vacuum chamber 10. The substrate 2 is carried to the bottom of the substrate support plate 11 by the transport robot 105. The substrate adsorption surface 11a of the lower surface of the substrate support plate 11 is horizontal. Next, the substrate 2 is transferred from the transport robot 105 to the substrate support plate 11 by the mask support unit 14. FIG6(B) shows its action. By raising the support member 14a, the periphery of the substrate 2 is placed on the claw F1, and the substrate 2 is raised from the transport robot 105 and pressed against the substrate adsorption surface 11a of the substrate support plate 11. The electrostatic suction cup of the substrate support plate 11 is operated to adsorb and hold the substrate 2.

[0081] Next, the mask 3 is moved into the vacuum chamber 10. FIG. 7(A) shows the state in which the mask 3 is moved into the vacuum chamber 10. The mask 3 is moved from the storage chamber 104 into the vacuum chamber 10 by the transport robot 106. The mask 3 is located directly below the substrate 2. Next, the mask 3 is transferred from the transport robot 106 to the mask support unit 14 and is located at the alignment position. FIG. 7(B) shows its action. The support member 14a is raised so that the periphery of the mask 3 is placed on the claw F1, and the mask 3 is raised from the transport robot 106. The mask 3 becomes supported by the support member 14a, and is located at the alignment position by further rising. In the present embodiment, the mask 3 is raised so that the mask 3 is located at the alignment position, but it may also be a structure in which the substrate 2 is lowered so that the substrate 2 is located at the alignment position.

[0082] Next, an alignment operation is performed. As shown in FIG8(A), the relative positions of the alignment marks of the substrate 2 and the alignment marks of the mask 3 are measured by the measurement unit SR. If the measurement result (the positional offset between the substrate 2 and the mask 3) is within the allowable range, the alignment operation is terminated. If the measurement result is outside the allowable range, a control amount (displacement of the substrate 2) is set based on the measurement result to make the positional offset converge to within the allowable range.

[0083] The "position shift amount" is defined by the distance and direction (X, Y, θ) of the position shift. Based on the set control amount, the position adjustment unit 80 is operated as shown in FIG. 8(B). As a result, the substrate support plate 11 is displaced on the XY plane to adjust the relative position of the substrate 2 with respect to the mask 3.

[0084] Whether or not the measurement result is within the allowable range can be determined by, for example, calculating the distances between the alignment marks and comparing the average value and the sum of squares of the distances with a preset threshold value.

[0085] After the relative position is adjusted, the relative position of the alignment mark of the substrate 2 and the alignment mark of the mask 3 is measured again by the measurement unit SR. If the measurement result is within the allowable range, the alignment operation is terminated. If the measurement result is outside the allowable range, the relative position of the substrate 2 with respect to the mask 3 is adjusted again. Thereafter, the measurement and relative position adjustment are repeated until the measurement result is within the allowable range.

[0086] Next, the film forming operation is performed. First, the substrate 2 and the mask 3 are overlapped. FIG9(A) shows the operation. When the substrate support plate 11 is lowered, the substrate 2 is placed on the mask 3, and the entire processed surface of the substrate 2 is in contact with the mask 3. The magnetic adsorption portion 13 abuts against the cooling plate 12, and the magnetic adsorption portion 13, the cooling plate 12, the substrate support plate 11, the substrate 2 and the mask 3 are brought into close contact in sequence from the upper side. The mask 3 is attracted by the magnetic force of the magnetic adsorption portion 13, so that the mask 3 and the substrate 2 can be in close contact as a whole. Since a magnetic body 32 is formed on the pattern portion 30 of the mask 3 (refer to FIGS. 4 and Figure 5 ), so that a magnetic attraction force can be obtained. As described above, according to this embodiment, even when the mask 3 has a portion with low rigidity, the adhesion between the substrate 2 and the mask 3 can be improved. The magnetic body 32 provided in the peripheral area 301 of the pattern portion 30 is attracted by the magnetic attraction portion 13 having the opening portion 130 (see Figure 5 ). That is, by applying tension to the pattern portion 30, the adhesion between the substrate 2 and the mask 3 can be further improved. In addition, by applying tension to the pattern portion 30 in this way, deformation and damage of the pattern portion 30 can be prevented compared to the case where tension is applied to the frame portion 31. In addition, by providing the magnetic body 32 in the pattern portion 30 in this way, even if the mask 3 is a non-magnetic body, the substrate 2 and the mask 3 can be made to be in close contact.

[0087] Through the above steps, the preparation for film formation is completed, and then, as shown in FIG9(B), the shutter 17a is opened to release the vapor deposition material from the vapor deposition unit 17. The vapor deposition material is vapor deposited onto the substrate 2 through the mask 3.

[0088] When the film formation is completed, the mask 3 and the substrate 2 are respectively carried out. FIG. 10(A) shows the operation of carrying out the mask 3. First, the magnetic adsorption unit 13 is raised, and the substrate 2 and the mask 3 are separated. After the hand of the transport robot 106 is placed under the mask 3, the support member 14a of the mask support unit 14 is lowered, and the mask 3 is transferred from the support member 14a to the transport robot 106. The transport robot 106 transports the mask 3 to the storage chamber 104.

[0089] Next, the substrate 2 on which film formation has been completed is carried out. The support member 14a of the mask support unit 14 is raised, and the substrate 2 is supported from the bottom by the claw F1. The adsorption of the substrate 2 by the substrate support unit 3 is released, and the substrate 2 is transferred to the support member 14a. After the hand of the transport robot 105 is placed under the substrate 2, the support member 14a of the mask support unit 14 is lowered as shown in FIG. 10(B), and the substrate 2 is transferred from the support member 14a to the transport robot 105. The transport robot 105 transports the substrate 2 to the transport path 101b. Through the above steps, the actions from carrying in the substrate 2 to film formation and carrying out are completed.

[0090] <Second embodiment>

[0091] In the first embodiment, an example is shown in which the magnetic body 32 is provided in the peripheral area of ​​the pattern portion 30, and the peripheral portion 301a and the peripheral portion 301b face each other in the X direction. The arrangement of the magnetic body 32 provided in the pattern portion 30 is not limited to this. FIG. 11 (A) to (C) are diagrams showing an example of the arrangement of the magnetic body. FIG. 11 (A) to (C) are also top views of the pattern portion 30.

[0092] Fig. 11 (A) shows an example in which a magnetic body 32c is provided in a peripheral portion 301c in the Y direction and a magnetic body 32d is provided in a peripheral portion 301d facing the peripheral portion 301c in the peripheral region 301 surrounding the pattern region 300. In this way, in the peripheral region 301, the direction in which the magnetic body 32 is arranged may be either the X direction or the Y direction.

[0093] FIG. 11(B) shows an example in which a magnetic body 32 is provided in each peripheral portion 32a to 32d. In the peripheral region 301 of the pattern portion 30, a magnetic body 32a is provided in the peripheral portion 301a in the X direction, and a magnetic body 32b is provided in the peripheral portion 301b facing the peripheral portion 301a. Moreover, a magnetic body 32c is provided in the peripheral portion 301c in the Y direction intersecting the X direction, and a magnetic body 32d is provided in the peripheral portion 301d facing the peripheral portion 301c. In this way, by providing the magnetic body 32 in four directions surrounding the pattern region 300, the tension acting on the pattern portion 30 can be increased. For example, as shown in FIG. 11(C), the magnetic body 32 can be provided in the peripheral region 301 in a manner surrounding the outer periphery of the pattern region 300. Even if the magnetic body 32 is provided in the peripheral region 301 in this way, the tension acting on the pattern portion 30 can be increased.

[0094] In addition, in the first embodiment and the present embodiment, an example in which the magnetic body 32 is formed in a straight line along the pattern area 300 is shown, but it is not limited to this. The magnetic body 32 can also be set in the peripheral area 301 in a curved shape, for example. In addition, the width and thickness of the magnetic body 32 can be appropriately designed. In addition, the position where the magnetic body 32 is set can be appropriately designed. In the peripheral area 301, the position where the magnetic body 32 is set can also be determined based on, for example, the shape of the pattern area 300, the shape of the pattern part 30, the shape of the frame part 31, etc. The position where the magnetic body 32 is set can also be determined based on, for example, the size (area) of the pattern part 30. Alternatively, it can also be determined based on the aspect ratio of the pattern part 30, etc.

[0095] <Third embodiment>

[0096] In the first embodiment, an example is described in which the frame portion 31 is formed in a lattice shape surrounding each of the plurality of pattern portions 30. The shapes of the pattern portions 30 and the frame portion 31 of the mask 3 are not limited thereto. Fig.12 An example is shown in which the frame portion 31' surrounded by the pattern portion 30' is formed in a linear shape. Fig.12 An enlarged view of the pattern portion 30 ′ is also shown.

[0097] like Fig.12 As shown, the shape of the frame portion 31' can also be formed into a linear shape. In addition, the pattern portion 30' is provided with a magnetic body 32c' in the peripheral portion 301c' in the Y direction of the peripheral area 301', and a magnetic body 32d' is provided in the peripheral portion 301d' facing the peripheral portion 301c'. In addition, as described above, the magnetic body 32 can also be provided in the peripheral portion 301a' and the peripheral portion 301b' facing each other along the X direction. The magnetic body 32 can also be provided to surround the pattern area 300. Even if it is a mask 3 with such a frame portion 31' and a pattern portion 30', the close contact between the mask 3 and the substrate 2 can be improved.

[0098] <Fourth embodiment>

[0099] In the first embodiment, the example in which the plurality of openings 130 formed in the magnetic attraction portion 13 penetrates is described. The plurality of openings 130 of the magnetic attraction portion 13 are not limited thereto. Fig.13 As shown, the opening 130' of the magnetic adsorption part 13 may also be a recessed part. The recessed part is a part that is recessed along the thickness direction of the magnetic adsorption part 13. Even with such a shape of the magnetic adsorption part 13, the magnetic adsorption part 13 can adsorb the magnetic body 32 formed on the mask 3 by magnetic force, and can apply tension to the pattern part 30.

[0100] <Fifth embodiment>

[0101] Next, an example of a method for manufacturing an electronic device is described. Hereinafter, as an example of an electronic device, a structure and a method for manufacturing an organic EL display device are described.

[0102] First, an organic EL display device to be manufactured will be described. Fig. 14(A) is a diagram showing an overall view of an organic EL display device 50, and Fig. 14(B) is a diagram showing a cross-sectional structure of one pixel.

[0103] 14A , a plurality of pixels 52 including a plurality of light emitting elements are arranged in a matrix in a display region 51 of an organic EL display device 50. Although details will be described later, each light emitting element has a structure including an organic layer sandwiched between a pair of electrodes.

[0104] In addition, the pixel mentioned here refers to the minimum unit that can display the desired color in the display area 51. In the case of a color organic EL display device, a pixel 52 is formed by a combination of a plurality of pixels (referred to as sub-pixels to distinguish them from the overall pixels) of a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B that show different light emission. The pixel 52 is usually composed of a combination of three sub-pixels of a red (R) light-emitting element, a green (G) light-emitting element, and a blue (B) light-emitting element, but is not limited to this. The pixel 52 only needs to include at least one sub-pixel, preferably includes two or more sub-pixels, and more preferably includes three or more sub-pixels. As the sub-pixels constituting the pixel 52, for example, it can also be a combination of four sub-pixels of a red (R) light-emitting element, a green (G) light-emitting element, a blue (B) light-emitting element, and a yellow (Y) light-emitting element.

[0105] FIG14(B) is a partial cross-sectional schematic diagram at line AB of FIG14(A). The pixel 52 has a plurality of sub-pixels composed of organic EL elements on a substrate 53, and the organic EL element includes a first electrode (anode) 54, a hole transport layer 55, any one of a red layer 56R / a green layer 56G / a blue layer 56B, an electron transport layer 57, and a second electrode (cathode) 58. The hole transport layer 55, the red layer 56R, the green layer 56G, the blue layer 56B, and the electron transport layer 57 are equivalent to organic layers. The red layer 56R, the green layer 56G, and the blue layer 56B are formed into patterns corresponding to light-emitting elements (sometimes also referred to as organic EL elements) that emit red light, green light, and blue light, respectively.

[0106] In addition, the first electrode 54 is formed separately for each light-emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed in common throughout the plurality of light-emitting elements 52R, 52G, and 52B, or may be formed for each light-emitting element. That is, as shown in FIG14(B), the red layer 56R, the green layer 56G, and the blue layer 56B may be formed separately for each sub-pixel region on the basis that the hole transport layer 55 is formed as a common layer throughout the plurality of sub-pixel regions, and then the electron transport layer 57 and the second electrode 58 are formed as a common layer over the plurality of sub-pixel regions.

[0107] In order to prevent short circuits between adjacent first electrodes 54, an insulating layer 59 is provided between the first electrodes 54. Furthermore, since the organic EL layer is degraded by moisture and oxygen, a protective layer 60 is provided to protect the organic EL element from moisture and oxygen.

[0108] In FIG. 14 (B), the hole transport layer 55 and the electron transport layer 57 are represented by one layer, but depending on the structure of the organic EL display element, they can also be formed by multiple layers having a hole blocking layer and an electron blocking layer. In addition, a hole injection layer having the following energy band structure can be formed between the first electrode 54 and the hole transport layer 55, and the energy band structure can smoothly inject holes from the first electrode 54 to the hole transport layer 55. Similarly, an electron injection layer can also be formed between the second electrode 58 and the electron transport layer 57.

[0109] Each of the red layer 56R, the green layer 56G, and the blue layer 56B can be formed by a single light-emitting layer or by stacking a plurality of layers. For example, the red layer 56R can be formed by two layers, with the red light-emitting layer forming the upper layer, and the hole transport layer or the electron blocking layer forming the lower layer. Alternatively, the lower layer can be formed by the red light-emitting layer, and the upper layer can be formed by the electron transport layer or the hole blocking layer. By arranging a layer on the lower side or the upper side of the light-emitting layer in this way, the light-emitting position of the light-emitting layer is adjusted, and by adjusting the optical path length, the color purity of the light-emitting element is improved.

[0110] In addition, although the example of the red layer 56R is shown here, the same structure can also be used in the green layer 56G and the blue layer 56B. In addition, the number of stacked layers can also be two or more. Moreover, layers of different materials can be stacked, such as the light-emitting layer and the electron blocking layer, or layers of the same material can be stacked, such as stacking two or more light-emitting layers.

[0111] Next, an example of a method for manufacturing an organic EL display device is specifically described. Here, it is assumed that the red layer 56R is composed of two layers, the lower layer 56R1 and the upper layer 56R2, and the green layer 56G and the blue layer 56B are composed of a single light-emitting layer. It is assumed that six film-forming chambers of the film-forming device 1 are arranged.

[0112] First, a substrate 53 is prepared on which a circuit (not shown) for driving the organic EL display device and a first electrode 54 are formed. The material of the substrate 53 is not particularly limited, and can be made of glass, plastic, metal, etc. In this embodiment, as the substrate 53, a substrate in which a polyimide film is laminated on a glass substrate is used.

[0113] A resin layer such as acrylic acid or polyimide is coated on the substrate 53 on which the first electrode 54 is formed by bar coating or spin coating, and the resin layer is patterned by photolithography to form an opening in the portion where the first electrode 54 is formed, and an insulating layer 59 is formed. The opening corresponds to the light-emitting region where the light-emitting element actually emits light. In addition, in this embodiment, before forming the insulating layer 59, the large substrate is processed, and after forming the insulating layer 59, a dividing step of dividing the substrate 53 is performed.

[0114] The substrate 53 with the patterned insulating layer 59 is carried into the first film forming chamber, and the hole transport layer 55 is formed as a common layer on the first electrode 54 in the display region. The hole transport layer 55 is formed using a mask having openings formed in each display region 51 that will eventually become the panel portion of each organic EL display device.

[0115] Next, the substrate 53 formed up to the hole transport layer 55 is moved into the second film forming chamber. The substrate 53 and the mask are aligned, the substrate is placed on the mask, and the red layer 56R is formed on the portion of the hole transport layer 55 where the red light emitting element of the substrate 53 is arranged (the region forming the red sub-pixel). Here, the mask used in the second film forming chamber is a high-precision mask having openings formed only in the multiple regions on the substrate 53 that become the sub-pixels of the organic EL display device, which are the multiple regions that become the red sub-pixels. Thus, the red layer 56R including the red light emitting layer is formed only in the region that becomes the red sub-pixel among the regions on the substrate 53 that become the multiple sub-pixels. In other words, the red layer 56R is not formed in the region that becomes the blue sub-pixel and the region that becomes the green sub-pixel among the regions on the substrate 53 that become the multiple sub-pixels, and is selectively formed in the region that becomes the red sub-pixel.

[0116] Similar to the formation of the red layer 56R, the green layer 56G is formed in the third film forming chamber, and the blue layer 56B is formed in the fourth film forming chamber. After the formation of the red layer 56R, the green layer 56G, and the blue layer 56B is completed, the electron transport layer 57 is formed in the entire display area 51 in the fifth film forming chamber. The electron transport layer 57 is formed as a common layer in the three color layers 56R, 56G, and 56B.

[0117] The substrate formed up to the electron transport layer 57 is moved to the sixth film forming chamber, and the second electrode 58 is formed into a film. In the present embodiment, each layer is formed into a film by vacuum evaporation in the first film forming chamber to the sixth film forming chamber. However, the present invention is not limited to this. For example, for the film formation of the second electrode 58 in the sixth film forming chamber, the film formation can also be performed by sputtering. After that, the substrate formed up to the second electrode 58 is moved to the sealing device, and the protective layer 60 is formed into a film by plasma CVD (sealing process), and the organic EL display device 50 is completed. In addition, here, it is assumed that the protective layer 60 is formed by the CVD method, but it is not limited to this, and it can also be formed by the ALD method or the inkjet method.

[0118] Here, for film formation in the first to sixth film forming chambers, film formation is performed using a mask having openings corresponding to the patterns of the respective layers to be formed. During film formation, after the relative positions of the substrate 53 and the mask are adjusted (aligned), the substrate 53 is placed on the mask and film formation is performed.

[0119] <Other embodiments>

[0120] The present invention can also be implemented by the following process: a program that implements one or more functions of the above-mentioned embodiments is supplied to a system or device via a network or a storage medium, and the program is read and executed by one or more processors in a computer of the system or device. In addition, the present invention can also be implemented by a circuit (such as an ASIC) that implements one or more functions.

[0121] The present invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the following claims are attached to disclose the scope of the invention.

Claims

1. A film forming device, which forms a film on a substrate via a mask, characterized in that: The mask comprises: a pattern portion, wherein the pattern portion is formed with a prescribed pattern; a frame portion that supports the pattern portion; and a magnetic body, wherein the magnetic body is arranged on the pattern portion, The film forming device includes a magnetic attraction member that is disposed opposite to the mask with the substrate interposed therebetween and that attracts the magnetic body.

2. The film forming device according to claim 1, characterized in that: The pattern portion has: a pattern region, wherein a plurality of openings are formed in the pattern region; and a peripheral region, the peripheral region surrounding the pattern region, The magnetic body is formed in the peripheral region of the pattern region and the peripheral region.

3. The film forming device according to claim 2, characterized in that: A first magnetic body is provided at a first peripheral portion of the peripheral region, A second magnetic body is provided at a second peripheral portion of the peripheral region facing the first peripheral portion in the first direction.

4. The film forming device according to claim 3, characterized in that: The magnetic adsorption component has: a first adsorption portion, the first adsorption portion being arranged outside the first magnetic body in the first direction and adsorbing the first magnetic body; as well as The second adsorption portion is arranged outside the second magnetic body in the first direction and adsorbs the second magnetic body.

5. The film forming device according to claim 4, characterized in that: The magnetic attraction member has an opening between the first attraction portion and the second attraction portion.

6. The film forming device according to claim 5, characterized in that: The magnetic adsorption component is a magnet. The opening portion is a portion penetrating the magnet in a thickness direction or a recessed portion.

7. The film forming device according to claim 3, characterized in that: The pattern portion is formed in a rectangular shape when the mask is viewed from above. The first peripheral portion and the second peripheral portion are portions along the side of the pattern portion formed into the rectangular shape, The first magnetic body and the second magnetic body are arranged along the side.

8. The film forming device according to claim 7, characterized in that: The mask has a plurality of pattern parts. The frame portion is formed in a lattice shape or a line shape surrounding each of the plurality of pattern portions.

9. The film forming device according to claim 4, characterized in that: The magnetic body is provided with a third magnetic body at a third peripheral portion between the first peripheral portion and the second peripheral portion of the pattern portion in a second direction intersecting the first direction. In the second direction, a fourth magnetic body is provided at a fourth peripheral portion between the first peripheral portion and the second peripheral portion of the pattern portion and facing the third peripheral portion. The magnetic adsorption component has: a third adsorption portion, the third adsorption portion being arranged outside the third magnetic body in the second direction and adsorbing the third magnetic body; as well as A fourth adsorption portion is arranged outside the fourth magnetic body in the second direction and adsorbs the fourth magnetic body.

10. The film forming device according to claim 1, characterized in that: The pattern portion is a portion thinner than the frame portion.

11. The film forming device according to claim 1, characterized in that: The substrate is a semiconductor wafer.

12. The film forming device according to claim 1, characterized in that: The mask is a non-magnetic body.

13. The film forming device according to claim 12, characterized in that: The mask is made of silicon.

14. The film forming device according to claim 1, characterized in that: The film forming device includes a film forming member that forms a film of a vapor deposition substance on a substrate.

15. A mask used in a film forming device for forming a film in a predetermined pattern on a substrate, characterized in that: The mask comprises: a pattern portion, wherein the pattern portion is formed with a prescribed pattern; A magnetic body provided on the pattern portion adsorbed by a magnetic adsorption member of a film forming device disposed across the substrate; and A frame portion supports the pattern portion.

16. A film forming method, wherein a film is formed on a substrate via a mask, wherein: The mask comprises: a pattern portion, wherein the pattern portion is formed with a prescribed pattern; a frame portion that supports the pattern portion; and a magnetic body, wherein the magnetic body is arranged on the pattern portion, The film forming method includes a magnetic attraction step in which the magnetic body is attracted so as to be arranged to face the mask with the substrate interposed therebetween.

17. A method for manufacturing an electronic device, characterized in that: The method for manufacturing an electronic device includes a film forming step of forming a film on a substrate using the film forming apparatus according to claim 1 .

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