Air inlet device and semiconductor process equipment

Abstract

The invention provides an air inlet device and semiconductor process equipment. Wherein the gas inlet device comprises a gas inlet main body and a gas disturbance structure; a first gas channel and a second gas channel which are isolated from each other are arranged in the gas inlet main body, and the first gas channel and the second gas channel are respectively used for introducing a first reaction gas and a second reaction gas into the reaction chamber; the disturbance gas structure is arranged on the gas inlet main body and is isolated from the first gas channel and the second gas channel; the disturbance gas structure is provided with a gas outlet which is communicated with the reaction chamber and is used for outputting disturbance gas, the gas outlet is arranged corresponding to the central area of the reaction chamber, and the gas outlet direction of the gas outlet is inclined downwards in the direction close to the axis of the reaction chamber, so that reaction gas in the central area of the reaction chamber can be promoted to be mixed and react; therefore, the thickness of the thin film formed in the central area of the surface of the wafer can be improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor equipment manufacturing, and in particular to an air intake device and a semiconductor process equipment. Background Art

[0002] Metal-organic Chemical Vapor Deposition (MOCVD) is an important equipment for preparing high-brightness LED chips and semiconductor power devices. The MOCVD process is usually as follows: the first reaction gas and the second reaction gas are alternately introduced into the reaction chamber, and the wafer placed on the tray is heated to cause a chemical reaction during the flow and diffusion of the reaction gas, and a single crystal thin film is deposited on the wafer.

[0003] Among them, the first reaction gas and the second reaction gas need to be isolated from each other before entering the reaction chamber to avoid premature reaction to form pollutants; however, the first reaction gas and the second reaction gas need to be quickly mixed after reaching the reaction chamber, and finally fully react to form semiconductor crystals when reaching the substrate. Therefore, existing MOCVD equipment usually includes a tray that can drive the wafer to rotate at high speed, so as to use the force between the surface of the wafer and the reaction gas above it to drive it to rotate together, thereby promoting the chemical reaction of the reaction gas.

[0004] However, since the linear velocity at different locations on the wafer surface is not consistent, the gas flow field inside the reaction chamber will be unevenly distributed under the drive of the wafer, which will lead to uneven film deposition on the wafer surface. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes an air intake device and a semiconductor process equipment, which can increase the gas flow rate above the central area of ​​the wafer to increase the thickness of the film formed in the central area of ​​the wafer surface.

[0006] To achieve the purpose of the present invention, an air intake device is provided, which includes an air intake body and a gas disturbance structure;

[0007] The gas inlet body is provided with a first gas channel and a second gas channel isolated from each other, and the first gas channel and the second gas channel are used to respectively introduce a first reaction gas and a second reaction gas into the reaction chamber;

[0008] The disturbing gas structure is arranged on the gas inlet body and is isolated from the first gas channel and the second gas channel; the disturbing gas structure has an outlet connected to the reaction chamber and used to output the disturbing gas, the outlet is arranged corresponding to the central area of ​​the reaction chamber, and the outlet direction of the outlet is inclined downward toward the axial direction close to the reaction chamber.

[0009] Optionally, the disturbing gas structure includes a gas outlet nozzle and a gas inlet assembly;

[0010] The gas inlet body has a gas outlet surface exposed in the reaction chamber, the gas outlet nozzle is arranged on the gas outlet surface, and the outlet of the gas outlet nozzle is the gas outlet;

[0011] The air intake component penetrates the air intake body from a side of the air intake body away from the air outlet surface to a side of the air outlet surface, and is connected to the air outlet nozzle for conveying the disturbed gas to the air outlet nozzle.

[0012] Optionally, the gas outlet nozzle is in a curved tube shape, so that the gas outlet direction of the outlet of the gas outlet nozzle is inclined downward toward the axial direction close to the reaction chamber.

[0013] Optionally, there are multiple air outlet nozzles, which are arranged in a row along the first horizontal direction.

[0014] Optionally, there are two rows of gas outlet nozzles, and the two rows of gas outlet nozzles are symmetrically arranged relative to the axis of the reaction chamber.

[0015] Optionally, the first gas channel has multiple outlets, which are arranged in a row on the gas outlet surface along the first horizontal direction, and the first gas channel has multiple rows of outlets, which are arranged at intervals along the second horizontal direction; the second horizontal direction is perpendicular to the first horizontal direction;

[0016] The outlets of the second gas channel are multiple and arranged in a row along the first horizontal direction on the gas outlet surface, and the outlets of the second gas channel are multiple rows and arranged at intervals along the second horizontal direction; the multiple rows of the outlets of the first gas channel and the multiple rows of the outlets of the second gas channel are arranged alternately;

[0017] The gas outlet nozzle is located in a space between an outlet of the first gas channel and an outlet of the second gas channel that are adjacent to each other.

[0018] Optionally, the disturbed gas structure includes a gas uniformity structure and a gas introduction structure, wherein the gas uniformity structure includes a disturbed gas uniformity cavity and a plurality of gas uniformity holes arranged in the gas inlet body, the plurality of gas uniformity holes are arranged in one-to-one correspondence with the plurality of gas outlet nozzles, and the two ends of each gas uniformity hole are respectively connected to the inlet of the disturbed gas uniformity cavity and the gas outlet nozzle;

[0019] The gas introduction structure passes through the gas inlet body from the side of the gas inlet body away from the gas outlet surface to the disturbance gas uniforming cavity, and is used for conveying the disturbance gas to the gas uniforming cavity.

[0020] Optionally, the first gas channel includes a first gas homogenizing cavity and a plurality of first gas outlet structures; the second gas channel includes a second gas homogenizing cavity and a plurality of second gas outlet structures; wherein the second gas homogenizing cavity is located on a side of the first gas homogenizing cavity close to the reaction chamber;

[0021] A plurality of the first gas outlet structures are all arranged through the second gas uniformizing cavity, and one end of each of the first gas outlet structures is connected to the first gas uniformizing cavity, and the other end is located at the gas outlet surface;

[0022] The plurality of second gas outlet structures are all located on one side of the second gas uniforming cavity close to the reaction chamber, and one end of each of the second gas outlet structures is connected to the second gas uniforming cavity, and the other end is located on the gas outlet surface.

[0023] Optionally, a connecting protrusion is provided in the second air uniforming cavity, one end of the connecting protrusion is connected to the bottom wall of the second air uniforming cavity, and the other end is sealed and connected to the top wall of the second air uniforming cavity; the disturbance air uniforming cavity and the plurality of air uniforming holes are formed in the connecting protrusion.

[0024] Optionally, the gas introduction structure includes a connecting portion and an air inlet interface, wherein the connecting portion is arranged in the first uniform gas cavity, and the two ends of the connecting portion are respectively sealed and connected to the top wall and the bottom wall of the first uniform gas cavity, and a first connecting hole is arranged in the connecting portion; a second connecting hole is arranged in the interval between the first uniform gas cavity and the second uniform gas cavity, and the two ends of the second connecting hole are respectively connected to the first connecting hole and the disturbance uniform gas cavity;

[0025] The air inlet interface is sealed and connected to a side of the air inlet body away from the air outlet surface, and a third connecting hole is provided in the air inlet body and located between the air inlet interface and the first connecting hole, respectively communicating with the two.

[0026] Optionally, the disturbance gas is the same as the first reaction gas and / or the second reaction gas.

[0027] As another technical solution, the present invention further provides a semiconductor process equipment, which includes a reaction chamber, a tray and an air intake device as described in any of the above embodiments;

[0028] The tray is arranged in the reaction chamber, and is used for carrying the wafer and driving the wafer to rotate.

[0029] The present invention has the following beneficial effects:

[0030] The gas inlet device provided by the embodiment of the present invention comprises a gas inlet body and a disturbing gas structure arranged on the gas inlet body. Among them, the gas inlet body is provided with a first gas channel and a second gas channel isolated from each other, and the two are used to respectively introduce the first reaction gas and the second reaction gas into the reaction chamber, so that the first reaction gas and the second reaction gas are mixed and reacted after entering the reaction chamber, thereby depositing a thin film on the surface of the wafer. The disturbing gas structure has a gas outlet connected to the reaction chamber, which is used to output the disturbing gas to the reaction chamber to disturb the first reaction gas flow and the second reaction gas flow inside the reaction chamber, thereby promoting the reaction between the two. Moreover, the gas outlet of the disturbing gas structure is arranged corresponding to the central area of ​​the reaction chamber, and the gas outlet direction of the gas outlet is inclined downward toward the axial direction close to the reaction chamber, that is, toward the central area of ​​the wafer, so that the output disturbing gas flow flows toward the central area of ​​the wafer, and can disturb the first reaction gas and the second reaction gas in the central area of ​​the reaction chamber to promote mixing and reaction, so as to increase the reaction rate occurring in the central area of ​​the reaction chamber, thereby increasing the thickness of the film formed in the central area of ​​the wafer surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 It is a structural diagram of the existing MOCVD process equipment;

[0032] Figure 2 A distribution diagram of the film thickness formed by using existing MOCVD process equipment;

[0033] Figure 3 A cross-sectional view of an air intake device provided by an embodiment of the present invention;

[0034] Figure 4 A distribution diagram of film thickness formed by a process using a process equipment having an air inlet device provided by an embodiment of the present invention;

[0035] Figure 5 A cross-sectional view of the air intake device provided by the embodiment of the present invention in another direction;

[0036] Figure 6 A bottom view of an air intake device provided by an embodiment of the present invention;

[0037] Figure 7A cross-sectional view of a disturbed gas structure provided by an embodiment of the present invention;

[0038] Figure 8 A schematic diagram of an air intake device provided in an embodiment of the present invention;

[0039] Fig. 9 A cross-sectional view of the air intake device provided by the embodiment of the present invention in another direction;

[0040] Fig.10 A top view of an air intake body provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0041] In order to enable those skilled in the art to better understand the technical solution of the present invention, the air intake device and semiconductor process equipment provided by the present invention are described in detail below in conjunction with the accompanying drawings.

[0042] like Figure 1 As shown, the MOCVD process equipment generally includes a reaction chamber 01, an air inlet device 02 disposed at the top of the reaction chamber 01, a tray 03 disposed inside the reaction chamber 01, and a driving device for driving the tray 03 to rotate. In addition, the MOCVD process equipment also includes a heater 04 disposed below the tray 03, which is used to heat the tray 03 and the wafer placed on the tray 03 to catalyze the reaction. Among them, the air inlet device 02 is used to transport the first reaction gas and the second reaction gas into the reaction chamber 01. The first reaction gas generally contains III-V group elements, such as gallium (Ga) gas; the second reaction gas is generally a nitrogen-containing gas, such as ammonia (NH3); after the two react, they can form III-V group nitrides with good semiconductor properties. Specifically, after the first reaction gas and the second reaction gas are transported to the inside of the reaction chamber 01 by the air inlet device 02, they will diffuse and mix and react to generate semiconductor crystals. At the same time, the mixed gas will flow downward to the surface of the wafer to be deposited into a thin film on the surface of the wafer. It can be seen that the mixing effect of the first reaction gas and the second reaction gas will have a key influence on the reaction rate, thereby affecting the quality of the deposited film.

[0043] Since there is an interaction force between the wafer surface and the gas above it, the movement of the wafer will affect the gas flow field inside the reaction chamber 01. Specifically, the farther away from the center of the wafer, the faster the linear speed of the wafer surface. Therefore, driven by the wafer, the gas flow rate at the edge of the wafer will be much greater than the gas flow rate in the center of the wafer. This will cause the mixing effect of the first reaction gas and the second reaction gas in the center of the wafer to be much worse than that in the edge area, which will cause the film deposited on the wafer surface to be too thin in the center, resulting in the defect of "thin in the center and thick at the edge". In addition, due to Figure 2The thickness distribution diagram of a film formed by a MOCVD process is shown, and it is clearly visible that the thickness of the central area of ​​the film is much smaller than the thickness of the edge area.

[0044] Please refer to Figure 3 In order to solve the above technical problems, this embodiment provides an air intake device for semiconductor process equipment, which is arranged in a reaction chamber of the semiconductor process equipment, for example, arranged on the top of the reaction chamber of the semiconductor process equipment. The air intake device includes an air intake body 1 and a disturbing gas structure 2.

[0045] The gas inlet body 1 is provided with a first gas channel and a second gas channel isolated from each other. The first gas channel and the second gas channel are used to introduce the first reaction gas and the second reaction gas into the reaction chamber respectively, so as to avoid the first reaction gas and the second reaction gas from reacting before entering the reaction chamber, which causes the product to be unable to be deposited on the wafer surface, thereby forming contaminated particles.

[0046] The disturbing gas structure 2 is disposed on the gas inlet body 1. The disturbing gas structure 2 has a gas outlet, which is connected to the reaction chamber and is used to output the disturbing gas to deliver the disturbing gas to the reaction chamber. Moreover, the disturbing gas structure 2 is isolated from the first gas channel and the second gas channel to avoid the gas path being connected in series, resulting in the disturbing gas still passing into the reaction chamber from the first gas channel or the second gas channel, thereby exacerbating the difference between the reaction rates of the reaction gas in the center area and the edge area of ​​the wafer.

[0047] like Figure 8 As shown, the gas outlet of the disturbed gas structure 2 is arranged corresponding to the central area of ​​the reaction chamber, and the gas outlet direction of the gas outlet is inclined downward toward the axial direction close to the reaction chamber, that is, toward the central area of ​​the wafer, so that the output disturbed gas flow flows toward the central area of ​​the wafer, and can disturb the first reaction gas flow and the second reaction gas flow in the central area of ​​the reaction chamber to promote the mixing of the reaction gases, thereby offsetting the difference in the degree of mixing of the reaction gases in the central area and the edge area caused by the different surface linear velocities of various parts of the wafer, thereby increasing the reaction rate above the central area of ​​the wafer, thereby avoiding the occurrence of defects such as thin film center and thick edge.

[0048] Specifically, the location of the gas outlet of the disturbing gas structure 2 can be adaptively adjusted according to the size of the wafer and the size of the reaction chamber, so that the disturbing gas flow can flow into the area with a smaller film thickness near the wafer axis.

[0049] Figure 4 A distribution diagram of the film thickness formed by a MOCVD process is shown. The process adopts the air intake device proposed in this embodiment. It can be clearly seen that the defect of the film being thin in the center and thick at the edge has been significantly improved.

[0050] In some optional implementations, the disturbance gas is the same as the first reaction gas and / or the second reaction gas to avoid the introduction of gases irrelevant to the process, thereby reducing the risk of contamination of the reaction chamber, or to avoid the gas not participating in the reaction from reducing the concentration of the reaction gas and thus reducing the process efficiency. Specifically, taking the first reaction gas as gallium gas and the second reaction gas as ammonia gas as an example, the disturbance gas can be gallium gas, which is introduced synchronously with the first reaction gas; or, the disturbance gas can be ammonia gas, which is introduced synchronously with the second reaction gas; or, the disturbance gas can be gallium gas and ammonia gas, which are introduced synchronously with the first reaction gas and the second reaction gas, respectively.

[0051] Preferably, in some embodiments, a flow detector is provided at the inlet of the disturbance gas structure 2 or at the disturbance gas source, so as to monitor the total amount of the first reaction gas and / or the second reaction gas actually delivered to the interior of the reaction chamber, thereby facilitating the control of the process rate. Alternatively, in other embodiments, the disturbance gas structure 2 shares a gas source with the first gas channel and / or the second gas channel, so as to deliver the first reaction gas to the interior of the reaction chamber synchronously with the first gas channel and / or deliver the second reaction gas to the interior of the reaction chamber synchronously with the second gas channel.

[0052] In some optional implementations, such as Figure 6 As shown, the gas inlet body 1 has a gas outlet surface exposed in the reaction chamber. The disturbing gas structure 2 includes a gas outlet nozzle 21 and a gas inlet component. The gas outlet nozzle 21 is arranged on the gas outlet surface of the gas inlet body 1, and the outlet of the gas outlet nozzle 21 is the gas outlet of the disturbing gas structure 2.

[0053] The air intake assembly penetrates the air intake body 1 from the side of the air intake body 1 facing away from the air outlet surface to the side of the air outlet surface, and is connected to the air outlet nozzle 21 for conveying disturbed gas to the air outlet nozzle 21 .

[0054] In some optional implementations, such as Figure 3 As shown, the gas outlet nozzle 21 is in a curved tube shape, so that the gas outlet direction of the gas outlet nozzle 21 is inclined downward toward the axial direction close to the reaction chamber. Moreover, when the reaction gas flows out of the gas channel, its flow direction is usually parallel to the axial direction of the reaction chamber. Therefore, the disturbed airflow output by the gas outlet nozzle 21 is also inclined to the direction of the reaction airflow, thereby increasing the probability of the disturbed airflow colliding with the reaction airflow, thereby effectively promoting the mixing of the reaction gases.

[0055] Specifically, the angle between the axis of the gas outlet nozzle 21 and the axis of the reaction chamber is, for example, 45°.

[0056] In some optional implementations, there are multiple gas outlet nozzles 21, and they are arranged in a row along the first horizontal direction. Further, in some preferred implementations, there are two rows of gas outlet nozzles 21, and the two rows of gas outlet nozzles 21 are symmetrically arranged relative to the axis of the reaction chamber.

[0057] In some preferred embodiments, Figure 3 As shown, the outlet nozzle 21 protrudes from the outlet surface of the gas inlet body 1, that is, the outlet of the outlet nozzle 21 is closer to the wafer than the outlet of the first gas channel and the outlet of the second gas channel. Specifically, the outlet of the outlet nozzle 21 protrudes by 1 to 2 mm, for example.

[0058] In some optional implementations, such as Figure 6 As shown, there are multiple outlets of the first gas channel, and they are arranged in a row along the first horizontal direction on the gas outlet surface, and there are multiple rows of outlets of the first gas channel, and they are arranged at intervals along the second horizontal direction. The second horizontal direction is perpendicular to the first horizontal direction. There are multiple outlets of the second gas channel, and they are arranged in a row along the first horizontal direction on the gas outlet surface, and there are multiple rows of outlets of the second gas channel, and they are arranged at intervals along the second horizontal direction; the multiple rows of outlets of the first gas channel and the multiple rows of outlets of the second gas channel are arranged alternately. In this way, the outlets of the first gas channel and the outlets of the second gas channel can be distributed in an array on the gas outlet surface, so that the first reaction gas and the second reaction gas can be uniformly output.

[0059] The gas outlet nozzle 21 of the disturbing gas structure 2 is located in a space between an outlet of the adjacent first gas channel and an outlet of the adjacent second gas channel.

[0060] In some optional implementations, such as Figure 3 and Figure 5 As shown, the disturbed gas structure 2 includes a gas homogenizing structure 22 and a gas introduction structure 23. The gas homogenizing structure 22 includes a disturbed gas homogenizing cavity 221 disposed in the gas inlet body 1; the gas introduction structure 23 penetrates the gas inlet body 1 from the side of the gas inlet body 1 away from the gas outlet surface to the disturbed gas homogenizing cavity 221, and is used to transport disturbed gas to the gas homogenizing cavity.

[0061] The gas uniforming structure 22 also includes a plurality of gas uniforming holes 222, and the plurality of gas uniforming holes 222 are arranged one-to-one correspondingly to the plurality of gas outlet nozzles 21, and the two ends of each gas uniforming hole 222 are respectively connected to the disturbance gas uniforming cavity 221 and the inlet of the gas outlet nozzle 21, so that the disturbed gas inside the disturbance gas uniforming cavity 221 can flow into each gas uniforming hole 222 evenly, so that the gas outlet volume of each gas outlet nozzle 21 is consistent, thereby ensuring the uniformity of the thickness in the central area of ​​the film while increasing the thickness in the central area of ​​the film.

[0062] In some optional implementations, the first gas channel includes a first uniform gas chamber 11 and a plurality of first gas outlet structures 13. The second gas channel includes a second uniform gas chamber 12 and a plurality of second gas outlet structures 14; wherein the second uniform gas chamber 12 is located on the side of the first uniform gas chamber 11 close to the reaction chamber. The plurality of first gas outlet structures 13 are all arranged throughout the second uniform gas chamber 12, and one end of each first gas outlet structure 13 is connected to the first uniform gas chamber 11, and the other end is located at the gas outlet surface, so as not to be connected to the second gas channel, so as to avoid the second reaction gas and the first reaction gas from mixing before entering the reaction chamber. The plurality of second gas outlet structures 14 are all located on the side of the second uniform gas chamber 12 close to the reaction chamber, and one end of each second gas outlet structure 14 is connected to the second uniform gas chamber 12, and the other end is located at the gas outlet surface.

[0063] In some optional embodiments, such as Fig. 9 As shown, the first gas homogenizing chamber 11 is connected to an external gas source through a first gas inlet pipe 111 .

[0064] In some optional implementations, such as Figure 3 and Figure 5 As shown, the second gas channel further includes an annular gas homogenizing cavity 15 ; the annular gas homogenizing cavity 15 is arranged around the second gas homogenizing cavity 12 , and can be connected to the second gas homogenizing cavity 12 and the second reaction gas source respectively to transport the second reaction gas into the second gas homogenizing cavity 12 .

[0065] In some optional embodiments, such as Figure 5 As shown, the annular gas-uniform cavity 15 is connected to an external gas source through a second gas inlet pipe 151. In some optional implementations, as Figure 6 As shown, the outlets of the first gas channels are distributed in an array, and the outer walls of the first gas outlet structures 13 corresponding to the same outlet are formed as one body.

[0066] In some optional implementations, a connecting convex portion is provided in the second gas homogenizing cavity 12, one end of the connecting convex portion is integrally connected to the bottom wall of the second gas homogenizing cavity 12, and the other end is sealedly connected to the top wall of the second gas homogenizing cavity 12. The above-mentioned disturbance gas homogenizing cavity 221 and a plurality of gas homogenizing holes 222 are formed in the connecting convex portion.

[0067] In some optional implementations, the gas introduction structure 23 includes a connection portion 231 and an air inlet interface 232, wherein the connection portion 231 is disposed in the first uniform gas chamber 11, and the two ends of the connection portion 231 are respectively sealed and connected to the top wall and the bottom wall of the first uniform gas chamber 11, and a first connection hole is disposed in the connection portion 231; a second connection hole 233 is disposed in the interval between the first uniform gas chamber 11 and the second uniform gas chamber 12, and the two ends of the second connection hole 233 are respectively connected to the first connection hole and the disturbance uniform gas chamber 221. The air inlet interface 232 is sealed and connected to the side of the air inlet body 1 away from the air outlet surface, and a third connection hole 234 is disposed in the air inlet body 1 and is located between the air inlet interface 232 and the first connection hole, and is respectively connected to the two. In this way, the air inlet interface 232, the third connecting hole 234, the first connecting hole, the second connecting hole 233, the disturbance gas uniformity chamber 221 and the gas uniformity hole 222 are connected in sequence to form a passage that can connect the external disturbance gas source and the gas outlet nozzle 21, thereby delivering the disturbance gas to the gas outlet nozzle 21.

[0068] In some optional embodiments, such as Fig.10 As shown, the two air inlet interfaces 232 are arranged in the central area of ​​the top of the air inlet body 1. Moreover, the first air inlet pipes 111 arranged in pairs and the second air inlet pipes 151 arranged in pairs are distributed in the edge area of ​​the top of the air inlet body 1.

[0069] In some specific embodiments, Figure 3 As shown, the air intake body 1 includes an air intake top plate 16 and an air homogenizing block 17. A first annular flange 161 is formed on the bottom surface of the air intake top plate 16, and a second annular flange 162 is also formed on the bottom surface of the first annular flange 161, and the width of the second annular flange 162 is smaller than the width of the first annular flange 161. The air homogenizing block 17 is connected and fixed to the first annular flange 161, and the outer circumference of the air homogenizing block 17 is sealed with the inner circumference of the second annular flange 162, and the bottom surface of the first annular flange 161 in the top surface edge area of ​​the air homogenizing block 17 abuts against each other, so that the top surface of the air homogenizing block 17, the inner circumference of the first annular flange 161 and the bottom surface of the air intake top plate 16 can enclose the above-mentioned first air homogenizing cavity 11.

[0070] Moreover, if Figure 3 As shown, the gas homogenizing block 17 includes a first porous plate 171 and a second porous plate 172 arranged at intervals and a gas homogenizing ring 173 surrounding the first porous plate 171 and the second porous plate 172 to enclose the second gas homogenizing cavity 12. Moreover, there are a plurality of pipes between the first porous plate 171 and the second porous plate 172 used as the plurality of first gas outlet structures 13, and both ends of the pipes are sealed and connected to the first porous plate 171 and the second porous plate 172 to avoid communication with the second gas homogenizing cavity 12. The second porous plate 172 is provided with a plurality of through holes used as the second gas outlet structures 14.

[0071] The annular uniform gas chamber 15 is arranged inside the uniform gas ring 173, and the multiple gas outlets of the annular uniform gas chamber 15 are evenly distributed on the inner circumference of the uniform gas ring 173. As another technical solution, this embodiment also provides a semiconductor process equipment, which includes a reaction chamber, a chuck device and an air intake device as described above. The chuck device is arranged in the reaction chamber to carry the wafer and drive the wafer to rotate. The air intake device is arranged at the top of the reaction chamber to transport gas to the inside of the reaction chamber.

[0072] As described above, the gas inlet body and the semiconductor process equipment provided in this embodiment are provided with a disturbing gas structure on the gas inlet body, and the gas outlet of the disturbing gas structure is provided corresponding to the central area of ​​the reaction chamber, so as to utilize the disturbing gas structure to transport the disturbing gas to the central area of ​​the reaction chamber, thereby disturbing the first reaction gas and the second reaction gas in the central area of ​​the reaction chamber, thereby promoting the mixing and reaction of the reaction gases in the central area of ​​the reaction chamber, and further increasing the thickness of the thin film formed in the central area of ​​the wafer surface.

[0073] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. An air intake device, applied to semiconductor process equipment, arranged in a reaction chamber of the semiconductor process equipment; characterized in that: The air intake device comprises an air intake body and a gas disturbance structure; The gas inlet body is provided with a first gas channel and a second gas channel isolated from each other, and the first gas channel and the second gas channel are used to respectively introduce a first reaction gas and a second reaction gas into the reaction chamber; The disturbing gas structure is arranged on the gas inlet body and is isolated from the first gas channel and the second gas channel; the disturbing gas structure has an outlet connected to the reaction chamber and used to output the disturbing gas, the outlet is arranged corresponding to the central area of ​​the reaction chamber, and the outlet direction of the outlet is inclined downward toward the axial direction close to the reaction chamber.

2. The air intake device according to claim 1, characterized in that: The disturbing gas structure includes an air outlet nozzle and an air inlet assembly; The gas inlet body has a gas outlet surface exposed in the reaction chamber, the gas outlet nozzle is arranged on the gas outlet surface, and the outlet of the gas outlet nozzle is the gas outlet; The air intake component penetrates the air intake body from a side of the air intake body away from the air outlet surface to a side of the air outlet surface, and is connected to the air outlet nozzle for conveying the disturbed gas to the air outlet nozzle.

3. The air intake device according to claim 2, characterized in that: The gas outlet nozzle is in a curved tube shape, so that the gas outlet direction of the outlet of the gas outlet nozzle is inclined downward toward the axial direction close to the reaction chamber.

4. The air intake device according to claim 2, characterized in that: There are multiple air outlet nozzles, which are arranged in a row along the first horizontal direction.

5. The air intake device according to claim 4, characterized in that: The gas outlet nozzles are arranged in two rows, and the two rows of gas outlet nozzles are symmetrically arranged relative to the axis of the reaction chamber.

6. The air intake device according to claim 4, characterized in that: The first gas channel has a plurality of outlets arranged in a row along the first horizontal direction on the gas outlet surface, and the first gas channel has a plurality of outlets arranged in rows at intervals along the second horizontal direction; the second horizontal direction is perpendicular to the first horizontal direction; The outlets of the second gas channel are multiple and arranged in a row along the first horizontal direction on the gas outlet surface, and the outlets of the second gas channel are multiple rows and arranged at intervals along the second horizontal direction; the multiple rows of the outlets of the first gas channel and the multiple rows of the outlets of the second gas channel are arranged alternately; The gas outlet nozzle is located in a space between an outlet of the first gas channel and an outlet of the second gas channel that are adjacent to each other.

7. The air intake device according to claim 4, characterized in that: The disturbed gas structure includes a gas uniformity structure and a gas introduction structure, wherein the gas uniformity structure includes a disturbed gas uniformity cavity and a plurality of gas uniformity holes arranged in the gas inlet body, the plurality of gas uniformity holes are arranged one-to-one correspondingly to the plurality of gas outlet nozzles, and the two ends of each gas uniformity hole are respectively connected to the inlet of the disturbed gas uniformity cavity and the gas outlet nozzle; The gas introduction structure passes through the gas inlet body from the side of the gas inlet body away from the gas outlet surface to the disturbance gas uniforming cavity, and is used for conveying the disturbance gas to the gas uniforming cavity.

8. The air intake device according to claim 7, characterized in that: The first gas channel includes a first gas-homogenizing cavity and a plurality of first gas outlet structures; the second gas channel includes a second gas-homogenizing cavity and a plurality of second gas outlet structures; wherein the second gas-homogenizing cavity is located on a side of the first gas-homogenizing cavity close to the reaction chamber; A plurality of the first gas outlet structures are all arranged through the second gas uniformizing cavity, and one end of each of the first gas outlet structures is connected to the first gas uniformizing cavity, and the other end is located at the gas outlet surface; The plurality of second gas outlet structures are all located on one side of the second gas uniforming cavity close to the reaction chamber, and one end of each of the second gas outlet structures is communicated with the second gas uniforming cavity, and the other end is located on the gas outlet surface.

9. The air intake device according to claim 8, characterized in that: A connecting protrusion is provided in the second uniform air cavity, one end of the connecting protrusion is connected to the bottom wall of the second uniform air cavity, and the other end is sealed and connected to the top wall of the second uniform air cavity; the disturbing uniform air cavity and a plurality of the uniform air holes are formed in the connecting protrusion.

10. The air intake device according to claim 9, characterized in that: The gas introduction structure includes a connecting portion and an air inlet interface, wherein the connecting portion is arranged in the first gas homogenizing cavity, and the two ends of the connecting portion are respectively sealed and connected to the top wall and the bottom wall of the first gas homogenizing cavity, and a first connecting hole is arranged in the connecting portion; a second connecting hole is arranged in the interval between the first gas homogenizing cavity and the second gas homogenizing cavity, and the two ends of the second connecting hole are respectively connected to the first connecting hole and the disturbance gas homogenizing cavity; The air inlet interface is sealed and connected to a side of the air inlet body away from the air outlet surface, and a third connecting hole is provided in the air inlet body and located between the air inlet interface and the first connecting hole, respectively communicating with the two.

11. The air intake device according to claim 1, characterized in that: The disturbance gas is the same as the first reaction gas and / or the second reaction gas.

12. A semiconductor process equipment, characterized in that: comprising a reaction chamber, a tray and an air intake device as claimed in any one of claims 1 to 11; The tray is arranged in the reaction chamber, and is used for carrying the wafer and driving the wafer to rotate.

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