Single crystal growth furnace

Abstract

The invention relates to the technical field of single crystals, and discloses a single crystal growth furnace which comprises a shell, the shell is movably sleeved with an electromagnetic limiting sleeve, the side face of the electromagnetic limiting sleeve is fixedly connected with a mounting plate, and the outer portion of the side face of the electromagnetic limiting sleeve is provided with a first mounting frame through a fastening bolt; a telescopic rod is mounted in the first mounting frame, a second mounting frame is mounted at the top end of the telescopic rod, an extension column is fixedly connected to the inner side of the second mounting frame, an upper cover is fixedly connected to the lower part of the extension column, and a first gear is mounted on the upper part of the extension column in a sleeving manner. According to the single crystal growth furnace, the electromagnetic limiting sleeve is installed outside the shell, the electromagnets are installed inside the electromagnetic limiting sleeve in an aligned mode, the temperature change of crystallization raw materials inside the shell is detected, the magnetic field of the electromagnets is controlled, the temperature is changed through the magnetic field, the stability of the raw materials during crystallization is ensured, and the crystallization quality is improved.

Description

Technical Field

[0001] The invention relates to the technical field of single crystals, in particular to a single crystal growth furnace. Background Art

[0002] Crystals are formed under the condition of phase transformation. There are three phases, namely gas phase, liquid phase and solid phase. Only crystals are real solids; crystals are formed when gas phase and liquid phase transform into solid phase, and solid phases can also transform directly; the general process of crystal formation is to generate crystal nuclei first, and then gradually grow, so it is necessary to use a single crystal growth furnace to assist its preparation.

[0003] Specifically, in the process of material crystallization, the crystallization of the single crystal in the growth furnace is disturbed by the temperature, and the crystallization is carried out in a uniform manner from all sides of the crystal column. When the local temperature of the material changes, the material at the local position will crystallize too fast or too slow, resulting in depression or protrusion in the single crystal structure, which in turn affects the quality of the single crystal. For this reason, we propose a single crystal growth furnace. Summary of the invention

[0004] In view of the shortcomings of the existing single crystal growth furnace, the present invention provides a single crystal growth furnace, which has an electromagnet installed on the outside of the shell. The electromagnet can control the magnetic field to perform crystallization processing at the crystallization temperature, and the crystallization rod and the crystallization furnace are kept in opposite rotations, thereby ensuring its crystallization efficiency and solving the problems raised in the above-mentioned background technology.

[0005] The present invention provides the following technical solution: a single crystal growth furnace, comprising an outer shell, an electromagnetic limit sleeve movably sleeved on the outside of the shell, a mounting plate fixedly connected to the side of the electromagnetic limit sleeve, a first mounting frame installed on the outside of the side of the electromagnetic limit sleeve by fastening bolts, a telescopic rod installed inside the first mounting frame, a second mounting frame installed on the top of the telescopic rod, an extension column fixedly connected to the inner side of the second mounting frame, an upper cover fixedly connected to the lower part of the extension column, a first gear sleeved on the upper part of the extension column, a first hydraulic telescopic device fixedly connected to the upper part of the first gear, a crystallization rod installed inside the first hydraulic telescopic device, a heating layer installed on the inner side of the shell, a temperature conduction tube installed on the inner side of the heating layer, an inner movably sleeved on the lower end of the shell, a connecting column movably sleeved in the middle of the connecting column, a second hydraulic telescopic device sleeved on the outer side of the lower end of the connecting column, and a crystallization furnace fixedly connected to the upper part of the connecting column.

[0006] Preferably, a positioning pin is installed inside the mounting plate, and the electromagnetic limiting sleeve is semicircular.

[0007] Preferably, a group of electromagnets are respectively installed on both sides of the electromagnetic limit sleeve, an electromagnetic induction coil is installed inside the electromagnet, and a temperature detector is arranged inside the shell.

[0008] Preferably, two sides of the first mounting frame are sleeved and mounted on the side surfaces of the mounting plate, and the fastening bolts pass through the first mounting frame and extend to the inside of the mounting plate, and the telescopic rod remains parallel to the housing.

[0009] Preferably, the extension column drives the upper cover to be arranged at the upper end of the outer shell, and the upper cover is sleeved on the outside of the upper end of the outer shell.

[0010] Preferably, the crystal rod is installed horizontally and vertically inside the second mounting frame, a single crystal is installed at the lower part of the crystal rod, and the single crystal is arranged inside the crystallization furnace.

[0011] Preferably, a first motor is installed on the side of the first gear, and the first motor is arranged on the side of the extension column.

[0012] Preferably, an arc-shaped opening is provided at the upper end of the temperature conduction tube, and a conical air outlet is installed at the lower end of the temperature conduction tube, and the air outlet is arranged at the lower end of the crystallization furnace.

[0013] Preferably, the connecting column is sleeved and installed inside the movable sleeve, the lower part of the connecting column is fixedly connected to the second gear, a gear column is installed on one side of the lower part of the shell, the second gear and the gear column are meshed and connected with each other, and a motor is installed at one end of the gear column.

[0014] Compared with the existing single crystal growth furnace, the present invention has the following beneficial effects: 1. The single crystal growth furnace is equipped with an electromagnetic limit sleeve on the outside of the shell, and an electromagnet is aligned and installed inside the electromagnetic limit sleeve to detect the temperature change of the crystallization raw material inside the shell and control the magnetic field of the electromagnet, that is, to change the temperature by using the magnetic field, so as to ensure the stability of the raw material during crystallization and improve the crystallization quality.

[0015] 2. The single crystal growth furnace is arranged inside the shell through a temperature conduction tube. The top of the temperature conduction tube drives heat absorption, and the absorbed heat is transmitted to the lower end, ensuring that the heat circulates inside the shell and improves heat utilization.

[0016] 3. The single crystal growth furnace can drive the first gear to rotate by starting the first motor, and at the same time start the first hydraulic telescopic device to drive the crystallization rod to move upward, and at the same time start the tooth column to drive the crystallization furnace to rotate, that is, during the crystallization process of the raw material and the crystallization rod, the rotation state is maintained, thereby improving the coating efficiency of the crystallized material on the outside of the crystallization rod and improving the crystallization effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic diagram of the main structure of the present invention; Figure 2 It is a schematic diagram of the back structure of the main body of the present invention; Figure 3 It is a schematic diagram of the cross-sectional structure of the main body of the present invention; Figure 4 It is a schematic diagram of a partially enlarged structure of the electromagnetic device of the present invention; Figure 5 This is an enlarged structural schematic diagram of location A of the present invention; Figure 6 It is a schematic diagram of the enlarged structure of point B of the present invention.

[0018] In the figure: 1. shell; 2. electromagnetic limit sleeve; 3. mounting plate; 4. positioning pin; 5. electromagnet; 6. first mounting frame; 7. fastening bolt; 8. telescopic rod; 9. second mounting frame; 10. extension column; 11. upper cover; 12. first gear; 13. first hydraulic telescopic device; 14. crystallization rod; 15. single crystal; 16. first motor; 17. heating layer; 18. temperature conduction tube; 19. movable sleeve; 20. connecting column; 21. second hydraulic telescopic device; 22. crystallization furnace; 23. second gear; 24. gear column. DETAILED DESCRIPTION

[0019] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0020] See also Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 and Figure 6A single crystal growth furnace comprises a shell 1, an electromagnetic limit sleeve 2 is movably sleeved on the outside of the shell 1, the electromagnetic limit sleeve 2 is covered and installed on the outside of the shell 1, a mounting plate 3 is fixedly connected to the side of the electromagnetic limit sleeve 2, the mounting plate 3 drives the electromagnetic limit sleeve 2 to be spliced ​​and installed, a first mounting frame 6 is installed on the outside of the side of the electromagnetic limit sleeve 2 through a fastening bolt 7, a telescopic rod 8 is installed inside the first mounting frame 6, the telescopic rod 8 drives the height of the extension column 10 to adjust, and it is convenient to open the upper cover 11, a second mounting frame 9 is installed on the top of the telescopic rod 8, the inner side of the second mounting frame 9 is fixedly connected to the extension column 10, the lower part of the extension column 10 is fixedly connected to the upper cover 11, the upper part of the extension column 10 is sleeved and installed with a first gear 12, and the upper part of the first gear 12 A first hydraulic telescopic device 13 is fixedly connected, and the first hydraulic telescopic device 13 drives the height of the crystallization rod 14 to be adjusted. The crystallization rod 14 is installed inside the first hydraulic telescopic device 13. A heating layer 17 is installed on the inner side of the outer shell 1, and the heating layer 17 drives the inner part of the outer shell 1 to perform heating treatment. A temperature conduction tube 18 is installed on the inner side of the heating layer 17. The hot air generated after the temperature conduction tube 18 drives the inner part of the outer shell 1 to be heated will leak to the lower end, thereby improving the energy utilization rate. The inner movable sleeve of the lower end of the outer shell 1 is connected with a movable sleeve 19, and the middle movable sleeve of the movable sleeve 19 is connected with a connecting column 20. The outer part of the lower end of the connecting column 20 is connected with a second hydraulic telescopic device 21. The upper part of the connecting column 20 is fixedly connected with a crystallization furnace 22, and the crystallization furnace 22 drives the material to be heated and melted.

[0021] refer to Figure 4 A positioning pin 4 is installed inside the mounting plate 3, the electromagnetic limit sleeve 2 is semicircular, and the electromagnetic limit sleeve 2 is circular. Two groups of electromagnetic limit sleeves 2 are sleeved and installed on the outside of the shell 1, and the positioning pin 4 is used to pass through the inside of the mounting plate 3, that is, the positioning pin 4 is used to squeeze and limit the position of the mounting plate 3, thereby improving the stability of the electromagnetic limit sleeve 2 when it is spliced ​​and limited at the position outside the shell 1.

[0022] refer to Figure 4 A group of electromagnets 5 are respectively installed on both sides of the electromagnetic limit sleeve 2, and an electromagnetic induction coil is installed inside the electromagnet 5. At the same time, a temperature detector is arranged inside the shell 1. By installing the electromagnet 5 inside the electromagnetic limit sleeve 2, the electromagnet 5 can be confined inside the electromagnetic limit sleeve 2, thereby improving the convenience of disassembly and replacement of the electromagnet 5. At the same time, the magnetic field can be changed according to the different crystallization states of the silicon element inside the crystallization furnace 22. By changing the magnetic field, the heating stability can be controlled to ensure the convenience of temperature control and the crystallization efficiency.

[0023] refer to Figure 5The two sides of the first mounting frame 6 are sleeved and installed on the sides of the mounting plate 3, and the fastening bolts 7 pass through the first mounting frame 6 and extend to the inside of the mounting plate 3. The telescopic rod 8 remains parallel to the shell 1. The first mounting frame 6 is sleeved and installed on the outside of the mounting plate 3 by controlling the first mounting frame 6. At the same time, the position of the first mounting frame 6 outside the mounting plate 3 is spliced ​​and limited by the fastening bolts 7, thereby improving the stability of the first mounting frame 6 when being limited, and reinforcing the position of the mounting plate 3.

[0024] refer to Figure 3 The extension column 10 drives the upper cover 11 to be set at the upper end of the shell 1, and the upper cover 11 is sleeved on the outside of the upper end of the shell 1. The telescopic rod 8 is adjusted by telescopic adjustment, and the telescopic rod 8 drives the height of the extension column 10 to be adjusted, that is, the upper cover 11 is controlled to be opened or closed, which improves convenience.

[0025] refer to Figure 3 The crystal rod 14 is installed horizontally and vertically inside the second mounting frame 9, a single crystal 15 is installed at the lower part of the crystal rod 14, and the single crystal 15 is arranged inside the crystallization furnace 22. The crystal rod 14 is installed inside the first hydraulic telescopic device 13, and the first hydraulic telescopic device 13 controls the expansion and contraction of the crystal rod 14, that is, controls the bottom end of the crystal rod 14 to contact with the melt inside the crystallization furnace 22, and at the same time, silicon element can be crystallized into a single crystal 15 at the lower end of the crystal rod 14.

[0026] refer to Figure 2 A first motor 16 is installed on the side of the first gear 12, and the first motor 16 is arranged on the side of the extension column 10. By starting the first motor 16, the first motor 16 drives the first gear 12 to rotate, and the first gear 12 drives the crystallization rod 14 to rotate. That is, when the single crystal 15 is crystallized, the crystallization rod 14 rotates to drive the material crystallization process, thereby improving the material crystallization efficiency.

[0027] refer to Figure 3 An arc-shaped opening is provided at the upper end of the temperature conduction tube 18, and a conical air outlet is installed at the lower end of the temperature conduction tube 18. The air outlet is arranged at the lower end of the crystallization furnace 22. The temperature conduction tube 18 is arranged inside the shell 1, and the heating layer 17 is controlled to heat and melt the material inside the crystallization furnace 22. At the same time, the upper end of the temperature conduction tube 18 is arranged on the upper part of the crystallization furnace 22. The heat generated by the heating of the crystallization furnace 22 will be transmitted to the inside of the temperature conduction tube 18. Under the guidance of the temperature conduction tube 18, the hot air is driven to be transported downward, that is, the heat circulates inside the shell 1, thereby improving the heat utilization rate.

[0028] refer to Figure 3The connecting column 20 is sleeved and installed inside the movable sleeve 19. The lower part of the connecting column 20 is fixedly connected to the second gear 23. A tooth column 24 is installed on one side of the lower part of the shell 1. The second gear 23 and the tooth column 24 are meshed and connected with each other. At the same time, a motor is installed at one end of the tooth column 24. By starting the motor installed outside the tooth column 24, the motor drives the tooth column 24 and the second gear 23 to perform threaded movement. That is, during the crystallization process, the crystallization furnace 22 is rotated synchronously. During the rotation of the crystallization furnace 22, the crystallization efficiency can be improved to avoid uneven crystallization during crystallization.

[0029] Working principle: When in use, the interior of the crystallization furnace 22 is filled with raw materials, and the heating layer 17 is started at the same time. The heating layer 17 drives the raw materials inside the crystallization furnace 22 to be heated. At the same time, the heat generated by the heating is guided to the lower end through the temperature conduction tube 18 to improve the heat utilization rate. At the same time, the telescopic rod 8 is started to control the upper cover 11 to be sealed on the upper part of the shell 1, and the first hydraulic telescopic device 13 drives the crystallization rod 14 to extend to the interior of the crystallization furnace 22. The crystallization rod 14 contacts the raw materials. At the same time, the first motor 16 and the gear column 24 are started, that is, the crystallization rod 14 and the crystallization furnace 22 are driven to rotate synchronously in the opposite direction. The crystallized material rotates and adheres to the outside of the crystallization rod 14, and is coated to form a single crystal 15. In the crystallization process, the first hydraulic telescopic device 13 is started to control the crystallization rod 14 to move upward, that is, the crystallized material extends upward in a cylindrical shape. A temperature detection device is arranged inside the shell 1 to detect the heating temperature of the raw materials inside the crystallization furnace 22. According to the demand, the electromagnet 5 is started, and the electromagnet 5 controls the heating magnetic field to change, so as to ensure that the temperature is kept uniform during heating and improve the crystallization efficiency of the equipment.

[0030] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A single crystal growth furnace, comprising a housing (1), an outer movably sleeved electromagnetic limit sleeve (2) on the housing (1), a side of the electromagnetic limit sleeve (2) fixedly connected to a mounting plate (3), characterized in that: A first mounting frame (6) is mounted on the outside of the side of the electromagnetic limit sleeve (2) via a fastening bolt (7); a telescopic rod (8) is mounted inside the first mounting frame (6); a second mounting frame (9) is mounted on the top of the telescopic rod (8); an extension column (10) is fixedly connected to the inside of the second mounting frame (9); a top cover (11) is fixedly connected to the bottom of the extension column (10); a first gear (12) is sleeved and mounted on the top of the extension column (10); and a first hydraulic telescopic device is fixedly connected to the top of the first gear (12). (13), a crystallization rod (14) is installed inside the first hydraulic telescopic device (13), a heating layer (17) is installed on the inner side of the outer shell (1), a temperature conduction tube (18) is installed on the inner side of the heating layer (17), a movable sleeve (19) is movably sleeved inside the lower end of the outer shell (1), a connecting column (20) is movably sleeved in the middle of the movable sleeve (19), a second hydraulic telescopic device (21) is sleeved outside the lower end of the connecting column (20), and a crystallization furnace (22) is fixedly connected to the upper part of the connecting column (20).

2. A single crystal growth furnace according to claim 1, characterized in that: A positioning pin (4) is installed inside the mounting plate (3), and the electromagnetic limiting sleeve (2) is semicircular.

3. A single crystal growth furnace according to claim 1, characterized in that: A group of electromagnets (5) are respectively installed on both sides of the electromagnetic limit sleeve (2), and an electromagnetic induction coil is installed inside the electromagnet (5). A temperature detector is also arranged inside the housing (1).

4. A single crystal growth furnace according to claim 1, characterized in that: The two sides of the first mounting frame (6) are sleeved and mounted on the side surfaces of the mounting plate (3), while the fastening bolts (7) pass through the first mounting frame (6) and extend into the interior of the mounting plate (3), and the telescopic rod (8) remains parallel to the housing (1).

5. The single crystal growth furnace according to claim 1, characterized in that: The extension column (10) drives the upper cover (11) to be arranged at the upper end of the outer shell (1), and the upper cover (11) is sleeved on the outside of the upper end of the outer shell (1).

6. A single crystal growth furnace according to claim 1, characterized in that: The crystallization rod (14) is installed horizontally and vertically inside the second installation frame (9), a single crystal (15) is installed at the bottom of the crystallization rod (14), and the single crystal (15) is arranged inside the crystallization furnace (22).

7. The single crystal growth furnace according to claim 1, characterized in that: A first motor (16) is installed on the side of the first gear (12), and the first motor (16) is arranged on the side of the extension column (10).

8. The single crystal growth furnace according to claim 1, characterized in that: The upper end of the temperature conduction tube (18) is provided with an arc-shaped opening, and the lower end of the temperature conduction tube (18) is provided with a conical air outlet, and the air outlet is arranged at the lower end of the crystallization furnace (22).

9. The single crystal growth furnace according to claim 1, characterized in that: The connecting column (20) is sleeved and installed inside the movable sleeve (19); a second gear (23) is fixedly connected to the lower part of the connecting column (20); a gear column (24) is installed on one side of the lower part of the housing (1); the second gear (23) and the gear column (24) are meshed and connected with each other; and a motor is installed at one end of the gear column (24).

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