Lower electrode assembly and semiconductor process chamber

Abstract

The invention discloses a lower electrode assembly and a semiconductor process chamber, and belongs to the technical field of semiconductor processing. The lower electrode assembly is arranged in a chamber main body of the semiconductor process chamber, the lower electrode assembly comprises a base, at least two switching parts and at least two filters, the base is provided with a heating layer, the heating layer comprises at least two heating areas, and the at least two switching parts are in one-to-one correspondence with the at least two heating areas; the at least two filters are in one-to-one correspondence with the at least two heating areas, and each filter is electrically connected with the corresponding heating area through the corresponding switching part. According to the scheme, the distance between the filter and the base can be effectively shortened, so that the mutual coupling degree of radio frequencies between the switching parts is effectively reduced, concentrated distribution of the switching parts is effectively avoided, the situation of single-side concentrated feed-in is further avoided, the mutual coupling degree of the radio frequencies between the switching parts is further reduced, and the service life of the filter is prolonged. Therefore, the condition of poor process uniformity is avoided.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor processing technology, and specifically relates to a lower electrode assembly and a semiconductor process chamber. Background Art

[0002] The semiconductor process chamber mainly includes an upper electrode assembly, a lower electrode assembly and a chamber body. The lower electrode assembly is the main RF feed structure, which can excite the gas to form plasma and control the direction of movement of the plasma. The base is the core component of the lower electrode assembly. One of the important functions of the base is the zone heating function. The temperature of different areas can be used to separately control or adjust the process rate and uniformity of different areas of the wafer during the process. Since the lower electrode assembly is an RF environment, a filter is required to filter out the RF power in the semiconductor process chamber to prevent the RF from entering the heating power supply of the base and affecting the use of the heating power supply.

[0003] In the prior art, the filter is electrically connected to the multiple heating zones of the base through cables to prevent the radio frequency from entering the heating power supply of the base. However, since the filter is arranged on one side of the radio frequency feeding module and all the cables are concentrated on the filter, a single-sided concentrated feeding is formed. Thus, during the use of the semiconductor process chamber, the radio frequency coupling between the cables is serious, which easily leads to poor process uniformity. Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide a lower electrode assembly and a semiconductor process chamber, which can solve the problem in the related art that the radio frequency coupling between cables during use of the semiconductor process chamber is serious, resulting in poor process uniformity.

[0005] In a first aspect, an embodiment of the present application provides a lower electrode assembly for being disposed in a chamber body of a semiconductor process chamber, the lower electrode assembly comprising: A base is provided with a heating layer, wherein the heating layer includes at least two heating zones; At least two adapters corresponding to the at least two heating zones one by one; At least two filters correspond to the at least two heating zones one by one, and each filter is electrically connected to the corresponding heating zone through the corresponding adapter.

[0006] In a second aspect, an embodiment of the present application further provides a semiconductor process chamber, comprising a chamber body, an upper electrode assembly and the above-mentioned lower electrode assembly, wherein the lower electrode assembly is arranged in the chamber body, and the upper electrode assembly, the chamber body and the lower electrode assembly are connected to form a process space.

[0007] In an embodiment of the present application, the lower electrode assembly is arranged in the chamber body of the semiconductor process chamber, that is, the base and the filter of the lower electrode assembly are both arranged in the chamber body of the semiconductor process chamber, and the filter is electrically connected to the heating zone through a transition part, so that the distance between the filter and the base can be effectively shortened, and then the length of the transition part between the filter and the heating zone of the base can be effectively shortened, so that the degree of RF mutual coupling between the transition parts can be effectively reduced; and the lower electrode assembly includes at least two filters, at least two filters correspond to at least two heating zones one by one, and each filter is electrically connected to the corresponding heating zone through a corresponding transition part, so that each heating zone can be equipped with a filter separately, so as to effectively avoid the concentrated distribution of the transition parts, and then avoid the situation of unilateral concentrated feeding, so as to further reduce the degree of RF mutual coupling between the transition parts. In this way, it is beneficial to improve the consistency of the process rate, so as to avoid the situation of process eccentricity and poor process uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 is a cross-sectional view of a semiconductor process chamber disclosed in an embodiment of the present application; Figure 2 is an exploded view of the lower electrode assembly disclosed in the embodiment of the present application (hiding the RF feed module, the support ring and the cooling device); Figure 3 is a diagram showing the connection relationship between the adapter disclosed in the embodiment of the present application and the heating area and the filter respectively; Figure 4 It is a distribution diagram of the feed points of each heating zone and the connection points of each filter disclosed in the embodiment of the present application; Figure 5 It is a schematic diagram of the distribution of each heating zone disclosed in the embodiment of the present application; Figure 6 is a connection relationship diagram between a cooling device and a filter disclosed in an embodiment of the present application; Figure 7 is an exploded diagram of a cooling device and a filter disclosed in an embodiment of the present application; Figure 8 is an exploded view of the air-cooling air inlet component disclosed in the embodiment of the present application; Fig. 9 is a three-dimensional diagram of the air-cooling air inlet member disclosed in the embodiment of the present application; Fig.10 It is a schematic diagram of the internal air flow of the air-cooled air inlet component disclosed in the embodiment of the present application.

[0009] Description of reference numerals: 100-base; 110-heating layer; 111-heating zone; 1101-core zone; 1102-first intermediate zone; 1103 - second middle area; 1104 - edge area; 1111 - positive electrode feeding point; 1112 - negative electrode feeding point; 200 - filter; 210 - filter connection part; 211 - second pin; 212 - positive connection point; 213 - negative electrode connection point; 220 - adapter; 2200 - adapter; 2201 - positive electrode adapter; 2202-negative electrode adapter; 221-first connecting piece; 222-second connecting piece; 230-air inlet; 300-RF feed module; 400-matching device; 500-lower electrode interface plate; 510-first through hole; 520 - second through hole; 600 - base interface plate; 610 - limit groove; 620 - fixing piece; 700-support ring; 800-cooling device; 810-air supply device; 820-air cooling air inlet; 821-air-cooling base; 822-air-cooling cover plate; 8221-connecting convex part; 823-air inlet cavity; 824-air outlet; 825-first sealing member; 826-fixing screw; 827-air inlet; 828-air cooling connection part; 829-connection cavity; 830-connection pipeline; 840-first joint; 850-second joint; 860-air cooling connector; 861-joint connector; 862-air inlet connector; 863 -connecting groove; 900 -chamber body; 910 -base ring; 920 -accommodating cavity; 1000 -upper electrode assembly. DETAILED DESCRIPTION

[0010] The following will be combined with the drawings in the embodiments of the present application to clearly describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments in the present application belong to the scope of protection of this application.

[0011] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0012] The lower electrode assembly and the semiconductor process chamber provided in the embodiments of the present application are described in detail below through specific embodiments and their application scenarios in combination with the accompanying drawings.

[0013] In the related art, the filter is arranged outside the chamber body 900 of the semiconductor process chamber, and the filter is electrically connected to multiple heating zones 111 of the base 100 through multiple cables. In order to avoid other components of the lower electrode assembly, multiple cables are gathered and extended vertically downward to be electrically connected to the filter outside the chamber body 900. This may easily lead to the multiple cables being parallel to each other in the vertical direction, which may easily lead to radio frequency mutual coupling. In addition, since the filter is located outside the chamber body 900, the distance between the filter and the base 100 is far, which in turn leads to longer cables, and radio frequency mutual coupling is more likely to occur between multiple cables.

[0014] refer to Figure 1-Figure 10 A lower electrode assembly is provided in an embodiment of the present application, and the lower electrode assembly is disposed as a whole in a chamber body 900 of a semiconductor process chamber. Specifically, the lower electrode assembly may include a base 100, at least two transition parts 220 and at least two filters 200, that is, the base 100, the transition parts 220 and the filters 200 are all disposed in the chamber body 900.

[0015] The base 100 may be provided with a heating layer 110, and the heating layer 110 may include at least two heating zones 111 to heat the wafer in different zones. Here, the temperature of each heating zone 111 is controlled separately, and the heating capacity of each heating zone 111 can be controlled separately, for example, the internal hardware of each heating zone 111 and the software parameters of each heating zone 111 can be adjusted separately, and then the process rate and uniformity of different areas of the wafer in the process can be adjusted to improve the uniformity of heating and enhance the process capability.

[0016] At least two adapters 220 can correspond one-to-one to at least two heating zones 111, at least two filters 200 can correspond one-to-one to at least two heating zones 111, and each filter 200 can be electrically connected to the corresponding heating zone 111 through the corresponding adapter 220. In this way, each heating zone 111 can be equipped with an independent filter 200 to filter each heating zone 111 separately, thereby preventing radio frequency from entering the heating power supply of the base 100 and affecting the use of the heating power supply, improving safety, and making it easier to arrange the adapter 220, which is beneficial to reducing the degree of radio frequency coupling between the adapters 220.

[0017] In this way, by setting the filter 200 in the chamber body 900 of the semiconductor process chamber, the distance between the filter 200 and the base 100 can be effectively shortened, and then the length of the adapter 220 between the filter 200 and the heating zone 111 of the base 100 can be effectively shortened, so that the degree of radio frequency mutual coupling between the adapters 220 can be effectively reduced; and, since at least two filters 200 correspond to at least two heating zones 111 one by one, each filter 200 is electrically connected to the corresponding heating zone 111 through the corresponding adapter 220, so that each heating zone 111 can be equipped with a filter 200 separately, so as to effectively avoid the concentrated distribution of the adapter 220, and then avoid the situation of unilateral concentrated feeding, so as to further reduce the degree of radio frequency mutual coupling between the adapters 220. In this way, it is beneficial to improve the consistency of the process rate, so as to avoid the situation of process eccentricity and poor process uniformity.

[0018] In a specific implementation, the lower electrode assembly may further include a base interface plate 600, a support ring 700, a lower electrode interface plate 500 and a radio frequency feed module 300, the number of filters 200 may be four, the base 100 may be an electrostatic chuck, and the base interface plate 600 may be a ceramic interface plate. The base 100, the radio frequency feed module 300 and the matcher 400 are connected to form a radio frequency feed loop (i.e., the radio frequency feed path is the base 100, the radio frequency feed module 300-matcher 400). The lower electrode interface disk 500 can be connected to the chamber body 900 of the semiconductor process chamber, and is used to receive the RF feed module 300. Here, the RF feed module 300 can occupy the center position of the entire lower electrode assembly, and the lower electrode interface disk 500 can receive the base 100 through the support ring 700 and the base interface disk 600, wherein the base interface disk 600 can be located below the base 100 to receive the base 100, and the support ring 700 can be arranged between the base interface disk 600 and the lower electrode interface disk 500, and is used to increase the distance between the base interface disk 600 and the lower electrode interface disk 500 to avoid insufficient ability to bombard the gas into plasma due to direct grounding of the RF.

[0019] Here, the base 100 is an important component of the RF feed-in. The base 100 can be a multi-layer adhesive structure to achieve functions such as adsorption, temperature control, and heating. The heating layer 110 on the base 100 can be controlled by direct current or alternating current to achieve the heating function of the base 100. In addition, the heating layer 110 can be provided with four heating zones 111, and the temperature of each heating zone 111 can be controlled separately. Since the RF can directly enter the heating power supply through the heating circuit of each heating zone 111 through the base 100, it is necessary to set the filter 200 in front of the heating power supply to filter out the RF. The RF feed-in circuit of each heating zone 111 is a heating power supply connected to each filter 200 through an adapter 220. Specifically, the filter 200 is connected to the heating layer 110 of the base 100 through a base interface plate 600 and an adapter 220.

[0020] In this embodiment, the heating zone 111 is a circular ring area, and each heating zone 111 is sequentially distributed along the radial direction of the base 100, and each heating zone 111 is provided with a heating element, and each adapter 220 is electrically connected to the heating element in each heating zone 111, where the heating element can be a heating wire or other heating structure. Along the radial direction of the base 100, the four heating zones 111 are respectively a core zone 1101, a first middle zone 1102, a second middle zone 1103, and an edge zone 1104.

[0021] In an optional embodiment of the present application, Figure 2 As shown, the lower electrode assembly includes the lower electrode interface disk 500 mentioned above, and the lower electrode interface disk 500 is arranged below the base 100. The filter 200 can be connected to the lower electrode interface disk 500, so that the filter 200 can be fixed, and the filter connecting part 210 of the filter 200 can pass through the lower electrode interface disk 500 and be electrically connected to the adapter part 220. In this way, the distance between the filter 200 and the base 100 can be further shortened, so that the filter connecting part 210 is directly electrically connected to the adapter part 220, thereby effectively reducing the degree of RF coupling.

[0022] Optionally, at least two first through holes 510 may be provided on the lower electrode interface plate 500 , and one end of the filter connecting part 210 of each filter 200 may pass through each first through hole 510 and be connected to each adapter part 220 , so that the filter 200 is conveniently connected to the adapter part 220 .

[0023] In other embodiments, the filter 200 may not be connected to the lower electrode interface disk 500, and the filter connecting portion 210 of the filter 200 may not pass through the lower electrode interface disk 500. Specifically, the filter 200 as a whole may be disposed below the lower electrode interface disk 500, and the filter connecting portion 210 of the filter 200 may be connected to the adapter portion 220 via a cable.

[0024] In addition, in the related art, in order to avoid other components of the lower electrode assembly, multiple cables electrically connecting the filter and the multiple heating zones 111 may be parallel to each other in the horizontal direction during the process of being gathered together, which makes the RF coupling between the multiple cables more serious.

[0025] In an optional embodiment of the present application, Figure 4 As shown, the heating zone 111 may be provided with a positive feeding point 1111 and a negative feeding point 1112, and the adapter 220 may include two strip-shaped adapters 2200, which may be a positive adapter 2201 and a negative adapter 2202, respectively, and the two ends of the positive adapter 2201 may be respectively electrically connected to the positive feeding point 1111 and the positive output end of the filter 200, and the two ends of the negative adapter 2202 may be respectively electrically connected to the negative feeding point 1112 and the negative output end of the filter 200, so that each filter 200 may form a loop with each heating zone 111, so as to filter each heating zone 111.

[0026] Here, the positive output end of the filter 200 may be provided with a positive connection point 212, and the positive adapter 2201 is electrically connected to the positive connection point 212. The negative output end of the filter 200 may be provided with a negative connection point 213, and the negative adapter 2202 is electrically connected to the negative connection point 213.

[0027] Furthermore, in order to solve the above problem, the orthographic projections of the two adapters 2200 in the same adapter part 220 on the heating layer 110 may intersect along the extension lines of their respective length directions. In this way, the situation that the orthographic projections of the two adapters 2200 in the same adapter part 220 on the heating layer 110 are parallel in their own length directions can be eliminated, thereby reducing the degree of RF coupling between the adapters 2200, which is conducive to further improving the consistency of the process rate, so as to avoid the situation of process eccentricity and poor process uniformity.

[0028] In other embodiments, the extension lines of the orthographic projections of two adapters 2200 in the same adapter portion 220 on the heating layer 110 along their respective length directions may also be parallel.

[0029] Optionally, the orthographic projections of the adapters 2200 of all adapters 220 on the heating layer 110 along the extension lines of their respective length directions intersect, that is, the orthographic projections of all adapters 2200 on the heating layer 110 along the extension lines of their respective length directions intersect, so that the parallelism of the adapters 2200 can be further eliminated, and the degree of RF coupling between the adapters 2200 can be further reduced. Of course, the orthographic projections of the adapters 2200 belonging to different adapters 220 on the heating layer 110 along the extension lines of their respective length directions can also be parallel.

[0030] In an optional embodiment, if Figure 4 As shown, the length of the positive electrode adapter 2201 and the negative electrode adapter 2202 belonging to the same adapter 220 on the heating layer 110 is the same. In this way, the phenomenon of uneven feeding efficiency caused by hardware differences can be avoided, and the heating capacity of the base 100 can be further improved to ensure that the heating of each heating area 111 does not affect each other, so as to improve the uniformity of the process. Optionally, the positive electrode adapter 2201 and the negative electrode adapter 2202 belonging to the same adapter 220 have the same length in space. In this way, a balanced current path can be formed when transmitting current, which helps to reduce the generation of electromagnetic fields. Since the balanced current path can better control the distribution of electromagnetic fields, unnecessary radiation can be reduced.

[0031] Moreover, the orthographic projections of the positive electrode adapter 2201 and the negative electrode adapter 2202 in the same adapter portion 220 on the heating layer 110 can be symmetrical about the perpendicular bisector of the line connecting the positive electrode feeding point 1111 and the negative electrode feeding point 1112. In this way, the degree of RF coupling can be further reduced, and at the same time, the stability and reliability of the loop formed by the filter 200 and the heating area 111 can be improved.

[0032] Of course, the lengths of the orthographic projections of the positive electrode adapter 2201 and the negative electrode adapter 2202 in the same adapter part 220 on the heating layer 110 may not be the same, and the orthographic projections of the positive electrode adapter 2201 and the negative electrode adapter 2202 in the same adapter part 220 on the heating layer 110 may not be symmetrical about the perpendicular bisector of the line connecting the positive electrode feeding point 1111 and the negative electrode feeding point 1112.

[0033] In an optional embodiment of the present application, the adapter 2200 may be a rigid structure, specifically, the adapter 2200 may be made of a rigid metal rod. In this way, the connection stability of the adapter 2200 may be improved and the consistency of each adapter 2200 may be ensured. Of course, in other embodiments, the adapter 2200 may also be a flexible structure.

[0034] Optionally, each adapter 2200 may be distributed in the same plane, and the axes of each adapter 2200 may intersect, so that the degree of RF coupling may be further reduced. Specifically, each adapter 2200 may be arranged on a surface of the base interface plate 600 described below close to the filter 200 .

[0035] In an optional embodiment, a first connector 221 and a second connector 222 may be respectively provided at both ends of the adapter 2200. The first connector 221 may be located above the adapter 2200 and electrically connected to the heating zone 111, and the second connector 222 may be located below the adapter 2200 and electrically connected to the filter 200. In this way, it is convenient to realize the electrical connection between the adapter 2200 and the heating zone 111 and the filter 200.

[0036] Among them, the first connector 221 can be a first pin, the second connector 222 and the filter 200 can include a second pin 211, and the other can include a socket, and the socket can be plugged with the second pin 211. This arrangement facilitates the quick connection of the filter 200 and the base 100, thereby saving installation time and improving process efficiency. Here, the filter 200 includes a socket, and the second connector 222 includes a second pin 211. It should be noted that the socket can be located in the space surrounded by the support ring 700 described above.

[0037] Of course, the first connector 221 may not be the first pin, and the second connector 222 and the filter 200 may not include the second pin 211 and the socket. Specifically, the first connector 221 and the second connector 222 may both be cables.

[0038] Optionally, the lower electrode assembly may further include the base interface plate 600 described above, which may be used to support the base 100. In order to facilitate the installation of the adapter 2200, a plurality of limiting grooves 610 may be provided on the base interface plate 600, and each adapter 2200 may be located in each limiting groove 610.

[0039] Of course, the base interface plate 600 may not be provided with the limiting groove 610 , and the adapter 2200 may be fixed to the base interface plate 600 by a clamp, or the adapter 2200 may be bonded to the base interface plate 600 .

[0040] Furthermore, one end of each first connector 221 can extend into the base 100 through the base interface plate 600 to facilitate electrical connection with the heating area 111 , and one end of each second connector 222 can extend out of the limiting groove 610 to facilitate electrical connection with the filter 200 .

[0041] Here, the first connector 221 of the positive pole adapter 2201 can be electrically connected to the positive pole feeding point 1111, and the second connector 222 of the negative pole adapter 2202 can be electrically connected to the negative pole feeding point 1112; the second connector 222 of the positive pole adapter 2201 can be electrically connected to the positive pole output terminal of the filter 200, and the second connector 222 of the negative pole adapter 2202 can be electrically connected to the negative pole output terminal of the filter 200.

[0042] In addition, the adapter 2200 and the base interface plate 600 can be connected through the fixing member 620, so that the stability of the connection between the adapter 2200 and the base interface plate 600 can be improved, and the consistency of each adapter 2200 can be further improved. Of course, the adapter 2200 can also be only embedded in the limiting groove 610, and not connected to the base interface plate 600 through the fixing member 620.

[0043] Here, the fixing member 620 may be a nut, and a stud may be provided on the base interface plate 600, the stud may be located in the limiting groove 610 and connected to the groove wall of the limiting groove 610, a space for the adapter 2200 to extend into may be provided between the stud and the groove bottom of the limiting groove 610, the nut may be threadedly connected to the stud, and the nut may be screwed on the stud to tighten the adapter 2200 so that the adapter 2200 is fixed in the limiting groove 610. Optionally, the adapter 2200 and the base interface plate 600 may be connected through two fixing members 620 to improve the stability of the connection between the adapter 2200 and the base interface plate 600. Specifically, two studs may be provided on the base interface plate 600, the two studs may be respectively provided near the two ends of the limiting groove 610, and the two nuts may be respectively threadedly connected to the two studs.

[0044] In an optional embodiment of the present application, the lower electrode assembly may further include a cooling device 800, which may be connected to each filter 200 and may be used to cool each filter 200. In this way, the filter 200 may be prevented from overheating during operation, thereby causing damage and failure of the filter elements in the filter 200.

[0045] In other embodiments, the lower electrode assembly may not include the cooling device 800 .

[0046] In an optional embodiment, each filter 200 may include a filter housing and a filter element. The filter element may be disposed in the filter housing, and the filter element may be electrically connected to the adapter 2200 and the heating power supply to form a loop between the heating zone 111 and the heating power supply.

[0047] The filter housing may be provided with an air inlet 230 for air to enter the filter housing to cool the filter element. Optionally, in order to prevent dust from entering the filter 200, a filter may be provided at the air inlet 230 to filter the air.

[0048] like Figure 7 As shown, the cooling device 800 may include an air supply device 810 and an air-cooling air inlet 820, and the air-cooling air inlet 820 may be provided with an air inlet cavity 823 and at least two air outlets 824, each of which may be communicated with the air inlet cavity 823, the air inlet cavity 823 may be communicated with the air supply device 810, and each of which may be communicated with each of which may be correspondingly communicated with each of which may be correspondingly communicated with each of which may be respectively ...

[0049] In other embodiments, the cooling device 800 may also only include the air supply device 810 , and the outlet of the air supply device 810 may be respectively connected to the air inlet 230 of each filter 200 through a plurality of connecting pipes 830 .

[0050] Optionally, the air supply device 810 may be a blower. Of course, the air supply device 810 may also be a fan, or other devices capable of supplying air.

[0051] In order to avoid air leakage, a first seal 825 can be provided at the connection between each air outlet 824 and each air inlet 230. Specifically, the first seal 825 can be connected to the air-cooling inlet 820, part of the first seal 825 is connected to the air outlet 824, and another part of the first seal 825 can extend into the air inlet 230.

[0052] In this embodiment, the air-cooling air inlet 820 can be connected to the filter housing of each filter 200. Specifically, at least two connecting protrusions 8221 can be provided on the air-cooling air inlet 820, each connecting protrusion 8221 can correspond to each filter 200 respectively, and each connecting protrusion 8221 can be connected to the filter housing of each filter 200 respectively through connecting screws.

[0053] In an optional embodiment, the lower electrode assembly also includes the RF feed module 300 described above, and the RF feed module 300 is electrically connected to the lower electrode on the base 100 to provide the RF power required for the process. At least two filters 200 can be distributed around the RF feed module 300 along the circumference of the RF feed module 300. In this way, it is possible to avoid all filters 200 from being concentrated on one side of the RF feed module 300. On the one hand, the degree of RF coupling between the filter connecting parts 210 of each filter 200 or between the second connecting parts 222 can be reduced. On the other hand, the parallel distribution of the adapter 2200 can be reduced to further eliminate or reduce the degree of RF coupling. Of course, each filter 200 can also be located on one side of the RF feed module 300.

[0054] Here, the lower electrode interface plate 500 may also be provided with a second through hole 520 , and the second through hole 520 may be used for partially passing the RF feeding module 300 , so as to facilitate the connection between the RF feeding module 300 and the base 100 .

[0055] In a specific implementation, in order to avoid gas pipelines (such as helium supply pipelines) and power supply components (such as DC-DC devices) connected to the process space of the semiconductor process chamber, the filters 200 are not distributed uniformly around the RF feeding module 300.

[0056] In addition, the air cooling air inlet 820 can be a ring structure, and the air cooling air inlet 820 can be arranged around the RF feeding module 300, so that it is convenient to connect the air cooling air inlet 820 with each filter 200, ensuring that the air cooling air inlet 820 can provide compressed air to each filter 200 at the same time.

[0057] In other embodiments, the air-cooling air inlet piece 820 may not be configured as a ring structure, and the air-cooling air inlet piece 820 may be configured as a strip structure, or the air-cooling air inlet piece 820 may be protrudingly provided with at least two air outlet connection parts, each air outlet connection part is respectively connected to each filter 200, and each air outlet 824 may be respectively provided on each air outlet connection part.

[0058] In an optional embodiment, if Figure 8As shown, the air-cooling air inlet member 820 may include an air-cooling base 821 and an air-cooling cover plate 822. The air-cooling base 821 may be provided with an air inlet groove, each air outlet 824 may be connected to the air inlet groove, and each air outlet 824 may be provided on the side wall of the air-cooling base 821. Specifically, each air outlet 824 may be provided on the side wall of the air-cooling base 821 away from the RF feed module 300, so that each air outlet 824 is respectively connected to each air inlet 230. The air-cooling cover plate 822 may be connected to the air-cooling base 821 and close the notch of the air inlet groove to form an air inlet cavity 823. In this way, the air-cooling air inlet member 820 is provided as a split structure for easy processing. Here, the air-cooling cover plate 822 and the air-cooling base 821 may be connected by fixing screws 826. Of course, the air-cooling air inlet member 820 may also be an integrated structure.

[0059] Optionally, in order to ensure the sealing of the air-cooling air inlet member 820 , a second sealing member may be provided at the connection between the air-cooling cover plate 822 and the air-cooling base body 821 .

[0060] In some embodiments, the air-cooling air inlet 820 may be provided with an air inlet hole 827, the air inlet hole 827 is connected to the air inlet cavity 823, and a connecting pipe 830 may be provided between the air supply device 810 and the air-cooling air inlet 820, a first joint 840 may be provided on the air-cooling air inlet 820, and a second joint 850 may be provided at the outlet of the air supply device 810, and the first joint 840 and the second joint 850 may be respectively connected to both ends of the connecting pipe 830 to achieve the connection between the air supply device 810 and the air-cooling air inlet 820. Here, the air inlet hole 827 may be connected to the air supply device 810 through the connecting pipe 830, so that the compressed air enters the air inlet cavity 823 through the air inlet hole 827.

[0061] Optionally, an air-cooling connection portion 828 may be protruding from the air-cooling air inlet member 820, a connecting cavity 829 communicating with the air inlet cavity 823 may be provided inside the air-cooling connection portion 828, and an air inlet hole 827 may be provided on the air-cooling connection portion 828, and the air inlet hole 827 may be respectively communicated with the connecting cavity 829 and the inner cavity of the first joint 840.

[0062] Further optionally, the first joint 840 can be connected to the air-cooling connection part 828 via an air-cooling connection part 860. Specifically, the air-cooling connection part 860 can include a joint connection part 861 and an air inlet piece connection part 862 connected to the joint connection part 861. The joint connection part 861 can be connected to the first joint 840, and the joint connection part 861 can be provided with ventilation holes, and the ventilation holes can be respectively connected to the inner cavity of the first joint 840 and the air inlet hole 827. The air inlet piece connection part 862 can be provided with a connecting groove 863. The air-cooling connection part 828 can be embedded in the connecting groove 863 and connected to the groove wall of the connecting groove 863 by screws. In this way, the connection strength between the air-cooling connection part 860 and the air-cooling connection part 828 can be improved.

[0063] Here, the end of the air-cooling connection part 828 facing away from the air-cooling air inlet 820 can be fitted with the joint connection part 861, so that the sealing between the air-cooling connection part 860 and the air-cooling connection part 828 can be improved. In order to further improve the sealing between the air-cooling connection part 828 and the air-cooling connection part 860, a third sealing member can be provided between the air-cooling connection part 828 and the air-cooling connection part 860.

[0064] Based on the lower electrode assembly provided in the embodiment of the present application, the embodiment of the present application further provides a semiconductor process chamber, which may include a chamber body 900, an upper electrode assembly 1000 and the lower electrode assembly described in any of the above embodiments, the lower electrode assembly is arranged in the chamber body 900, and the upper electrode assembly 1000, the chamber body 900 and the lower electrode assembly are connected to form a process space. The process space can be used for wafers to enter, and the wafers can be processed in the process space, such as etching the wafers.

[0065] The beneficial effects achieved by the semiconductor process chamber provided in the embodiment of the present application are consistent with the beneficial effects achieved by the lower electrode assembly provided in the embodiment of the present application, and will not be repeated here.

[0066] In an optional embodiment, a base ring 910 may be provided at the bottom of the chamber body 900, and the base ring 910 may be located in the chamber body 900, and the lower electrode assembly may further include an RF feed module 300, and the base ring 910 may be used to support the base 100. Specifically, the base ring 910 may support the lower electrode interface plate 500, and the base ring 910 may enclose a receiving cavity 920, and the receiving cavity 920 may be used to receive at least part of the RF feed module 300 and at least part of each filter 200. In this way, at least part of the filter 200 may be disposed in the chamber body 900, which may effectively shorten the distance between the filter 200 and the base 100 to effectively reduce the degree of RF coupling, and on the other hand, may help reduce the volume of the semiconductor process chamber.

[0067] Optionally, the semiconductor process chamber may further include a matcher 400, which may be disposed outside the chamber body 900 of the semiconductor process chamber, and the matcher 400 is electrically connected to the RF feeding module 300, so that the matcher 400, the RF feeding module 300 and the base 100 may constitute an RF feeding loop.

[0068] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A lower electrode assembly, characterized in that: Used to be arranged in a chamber body (900) of a semiconductor process chamber, the lower electrode assembly comprises: A base (100) is provided with a heating layer (110), wherein the heating layer (110) comprises at least two heating areas (111); At least two adapter portions (220), corresponding one-to-one to the at least two heating zones (111); At least two filters (200) correspond one-to-one to the at least two heating zones (111), and each filter (200) is electrically connected to the corresponding heating zone (111) via the corresponding adapter (220).

2. The lower electrode assembly according to claim 1, characterized in that: The lower electrode assembly further comprises a lower electrode interface plate (500), the lower electrode interface plate (500) being arranged below the base (100), the filter (200) being connected to the lower electrode interface plate (500), and the filter connection portion (210) of the filter (200) passing through the lower electrode interface plate (500) being electrically connected to the adapter portion (220).

3. The lower electrode assembly according to claim 2, characterized in that: The heating area (111) is provided with a positive electrode feeding point (1111) and a negative electrode feeding point (1112); The adapter part (220) comprises two bar-shaped adapters (2200), the two adapters (2200) being respectively a positive adapter (2201) and a negative adapter (2202), the two ends of the positive adapter (2201) being respectively electrically connected to the positive feeding point (1111) and the positive output end of the filter (200), and the two ends of the negative adapter (2202) being respectively electrically connected to the negative feeding point (1112) and the negative output end of the filter (200), The orthographic projections of the two adapters (2200) belonging to the same adapter portion (220) on the heating layer (110) intersect along the extension lines in their respective length directions.

4. The lower electrode assembly according to claim 3, characterized in that: The orthographic projections of the positive electrode adapter (2201) and the negative electrode adapter (2202) in the same adapter portion (220) on the heating layer (110) are the same in length, and the orthographic projections of the positive electrode adapter (2201) and the negative electrode adapter (2202) in the same adapter portion (220) on the heating layer (110) are symmetrical about a perpendicular bisector of a line connecting the positive electrode feeding point (1111) and the negative electrode feeding point (1112).

5. The lower electrode assembly according to claim 3, characterized in that: The adapter (2200) is a rigid structure.

6. The lower electrode assembly according to claim 3, characterized in that: A first connecting member (221) and a second connecting member (222) are respectively provided at two ends of the adapter (2200); the first connecting member (221) is located above the adapter (2200) and is electrically connected to the heating zone (111); the second connecting member (222) is located below the adapter (2200) and is electrically connected to the filter (200); the first connecting member (221) is a first plug pin; one of the second connecting member (222) and the filter (200) comprises a second plug pin (211), and the other comprises a socket plugged into the second plug pin (211).

7. The lower electrode assembly according to claim 6, characterized in that: The lower electrode assembly further comprises a base interface plate (600) for supporting the base (100), a plurality of limit grooves (610) being arranged on the base interface plate (600), each of the adapters (2200) being located in each of the limit grooves (610), one end of each of the first connecting members (221) passing through the base interface plate (600) and extending into the base (100), one end of each of the second connecting members (222) extending out of the limit groove (610), and the adapter (2200) and the base interface plate (600) being connected via a fixing member (620).

8. The lower electrode assembly according to claim 1, characterized in that: The lower electrode assembly further comprises a cooling device (800), wherein the cooling device (800) is respectively connected to each filter (200) and is used to cool each filter (200).

9. The lower electrode assembly according to claim 8, characterized in that: Each of the filters (200) comprises a filter housing and a filter element disposed in the filter housing, the filter element being used to be electrically connected to the adapter (220) and a heating power source, and an air inlet (230) is disposed on the filter housing; The cooling device (800) comprises an air supply device (810) and an air-cooling air inlet member (820); the air-cooling air inlet member (820) is provided with an air inlet cavity (823) and at least two air outlets (824) connected to the air inlet cavity (823); the air inlet cavity (823) is connected to the air supply device (810), and each of the air outlets (824) is connected to a corresponding air inlet (230).

10. The lower electrode assembly according to claim 9, characterized in that: The lower electrode assembly further comprises a radio frequency feed module (300), the at least two filters (200) are distributed around the radio frequency feed module (300) along the circumference of the radio frequency feed module (300), the air cooling air inlet member (820) is a ring-shaped structure, and the air cooling air inlet member (820) is arranged around the radio frequency feed module (300).

11. The lower electrode assembly according to claim 9, characterized in that: The air-cooling air inlet component (820) comprises an air-cooling base (821) and an air-cooling cover plate (822); an air inlet groove is provided on the air-cooling base (821); each of the air outlets (824) is provided on a side wall of the air-cooling base (821) and is connected to the air inlet groove; the air-cooling cover plate (822) is connected to the air-cooling base (821) and closes the notch of the air inlet groove to form the air inlet cavity (823).

12. A semiconductor process chamber, characterized in that: It comprises a chamber body (900), an upper electrode assembly (1000) and a lower electrode assembly as described in any one of claims 1 to 11, wherein the lower electrode assembly is arranged in the chamber body (900), and the upper electrode assembly (1000), the chamber body (900) and the lower electrode assembly are connected to form a process space.

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