Metal mask and manufacturing method thereof

Abstract

A metal mask having a porous region, a peripheral region, which is a region located around the porous region and has a non-porous surface, and an alignment region, which is a region surrounded by the porous region and has a non-porous surface and an alignment mark, the perforated region has a plurality of through-holes and a plurality of ridge lines, and the heights of the ridge lines have a predetermined relationship in a cross-section passing through a predetermined straight line L1.

Description

Technical Field

[0001] The present disclosure relates to a metal mask and a method for manufacturing the same. Background Art

[0002] The pixels of an organic EL display device are formed by attaching a material forming the pixels to a substrate by vapor deposition using a metal mask. Therefore, improving the performance of the metal mask is important for improving the image quality of the organic EL display device. For example, Patent Document 1 discloses a method for manufacturing a metal mask capable of forming through holes with high precision.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2015-163734 Summary of the invention

[0006] Problems to be solved by the invention

[0007] The metal mask is set on the frame and is used to pattern the organic material on the substrate in a desired pattern in the manufacture of the organic EL display device. Such a metal mask has, for example, a porous area, a peripheral area, and an alignment mark. The porous area is an area having a through hole for the evaporation material to pass through. In addition, the peripheral area is an area located around the porous area and supporting the porous area. The alignment mark can also be a through hole formed in the non-porous area.

[0008] Such an alignment mark can be used, for example, for positioning or position correction when the metal mask is set on a frame, or for positioning or position correction between a metal mask device and a substrate.

[0009] However, when the non-porous area with the alignment mark is adjacent to the porous area, the strength difference at the boundary becomes large. If the strength difference becomes large, it is easy to apply force locally when the metal mask is set on the frame or during evaporation. Moreover, such local force becomes the main cause of deformation or breakage of the metal mask.

[0010] The present disclosure has been made in view of the above-mentioned problems, and an object thereof is to provide a metal mask which is less likely to be deformed or broken at the boundary between a non-porous region having an alignment mark and a porous region, and a method for manufacturing the same.

[0011] Means for solving problems

[0012] A metal mask according to an embodiment of the present disclosure includes a hole region, a surrounding region, and an alignment region.

[0013] The surrounding area is an area located around the porous area.

[0014] The surrounding area has a non-porous surface,

[0015] The alignment area is an area surrounded by the hole area.

[0016] The alignment area has a non-porous surface and an alignment mark,

[0017] The perforated area has a plurality of through holes and a plurality of ridges,

[0018] The ridge lines divide the adjacent through holes.

[0019] The through holes include a first through hole, a second through hole, a third through hole, and a fourth through hole.

[0020] The ridge lines include a first ridge line, a second ridge line, and a third ridge line.

[0021] The first through hole is located adjacent to a boundary between the alignment area and the perforated area.

[0022] The second through hole is located adjacent to the first through hole across the first ridge line.

[0023] The third through hole is located adjacent to the second through hole across the second ridge line.

[0024] The fourth through hole is located adjacent to the third through hole across the third ridge line.

[0025] The boundary, the centroid of the first through hole, the centroid of the second through hole, and the centroid of the third through hole are located on the straight line L1 in this order.

[0026] The straight line L1 is a straight line where the distance between the center of gravity of the first through hole and the center of gravity of the fourth through hole is the shortest.

[0027] In the section passing through the straight line L1,

[0028] The boundary has a height H0,

[0029] The first ridgeline has a height H1,

[0030] The second ridgeline has a height H2,

[0031] The third edge line has a height H3,

[0032] The ratio of the height H0 to the height H1 (H0 / H1) is 2.10 or less,

[0033] The ratio of the height H1 to the height H2 (H1 / H2) is less than 2.10,

[0034] The ratio of the height H2 to the height H3 (H2 / H3) is 2.10 or less.

[0035] The method for manufacturing the metal mask according to one embodiment of the present disclosure comprises:

[0036] a step of preparing a metal plate having a first surface and a second surface located on the opposite side of the first surface; and

[0037] an etching step of forming the metal mask by etching the metal plate,

[0038] The metal mask comprises a hole area, a surrounding area and an alignment area.

[0039] The surrounding area is an area located around the porous area.

[0040] The surrounding area has a non-porous surface,

[0041] The alignment area is an area surrounded by the hole area.

[0042] The alignment area has a non-porous surface and an alignment mark,

[0043] The perforated area has a plurality of through holes and a plurality of ridges,

[0044] The ridge lines divide the adjacent through holes.

[0045] The through holes include a first through hole, a second through hole, a third through hole, and a fourth through hole.

[0046] The ridge lines include a first ridge line, a second ridge line, and a third ridge line.

[0047] The first through hole is located adjacent to a boundary between the alignment area and the perforated area.

[0048] The second through hole is located adjacent to the first through hole across the first ridge line.

[0049] The third through hole is located adjacent to the second through hole across the second ridge line.

[0050] The fourth through hole is located adjacent to the third through hole across the third ridge line.

[0051] The boundary, the centroid of the first through hole, the centroid of the second through hole, the centroid of the third through hole, and the centroid of the fourth through hole are located on the straight line L1 in this order,

[0052] The straight line L1 is a straight line where the distance between the center of gravity of the first through hole and the center of gravity of the fourth through hole is the shortest.

[0053] In the section passing through the straight line L1,

[0054] The boundary has a height H0,

[0055] The first ridgeline has a height H1,

[0056] The second ridgeline has a height H2,

[0057] The third edge line has a height H3,

[0058] The ratio of the height H0 to the height H1 (H0 / H1) is 2.10 or less,

[0059] The ratio of the height H1 to the height H2 (H1 / H2) is less than 2.10,

[0060] The ratio of the height H2 to the height H3 (H2 / H3) is 2.10 or less.

[0061] Effects of the Invention

[0062] In at least one embodiment of the present disclosure, a metal mask that is not easily deformed or broken at a boundary between a non-porous region having an alignment mark and a porous region and a method for manufacturing the same are provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0063] Figure 1A is a plan view showing a metal mask according to one embodiment of the present disclosure.

[0064] Figure 1B is a plan view showing a metal mask according to one embodiment of the present disclosure.

[0065] Figure 1C is a plan view showing a metal mask according to one embodiment of the present disclosure.

[0066] Figure 2A Viewed from the second side Figure 1B A top view of area S1 is shown.

[0067] Figure 2B Viewed from the second side Figure 1B Another top view of area S1 is shown.

[0068] Figure 3A Viewed from the second side Figure 2A A top view of region S3 is shown.

[0069] Figure 3B It is along Figure 3AA cross-sectional view taken along line II' is shown.

[0070] Figure 3C It is along Figure 3A A cross-sectional view taken along line II-II' is shown.

[0071] Figure 3D It is along Figure 3A A cross-sectional view along line III-III' is shown.

[0072] Figure 3E Viewed from the second side Figure 3A A stereoscopic view of area S4 is shown.

[0073] Figure 4 Viewed from the second side Figure 1B A top view of region S2 is shown.

[0074] Figure 5A This is a schematic diagram for explaining an example of a method for manufacturing a metal mask.

[0075] Figure 5B This is a diagram showing an example of a process of forming a resist film on a metal plate.

[0076] Figure 5C This is a diagram showing an example of a process of patterning a resist film.

[0077] Figure 5D This is a diagram showing an example of the first surface etching step.

[0078] Figure 5E This is a diagram showing an example of the second surface etching step.

[0079] Figure 6 FIG. 1 is a diagram showing a metal mask device according to an embodiment of the present disclosure.

[0080] Figure 7 : is a cross-sectional view which shows the vapor deposition device which concerns on one embodiment of this disclosure. DETAILED DESCRIPTION

[0081] Hereinafter, one embodiment of the present disclosure will be described with reference to the accompanying drawings. In addition, in the drawings attached to this specification, for the sake of convenience of illustration and understanding, the scale and the aspect ratio may be appropriately changed and exaggerated relative to the actual object.

[0082] Unless otherwise specified in the present specification and / or the drawings, the following explanations shall be given.

[0083] The terms indicating a substance that forms the basis of a certain structure may not be distinguished only by the difference in name. For example, the terms such as "substrate", "base material", "plate", "sheet" or "film" correspond to the above description.

[0084] The terms and / or numerical values ​​indicating shapes and / or geometric conditions need not be limited to strict meanings, and may also be interpreted as including a range of degrees in which the same function can be expected. For example, "parallel" and / or "orthogonal" etc. are equivalent to the above terms. In addition, "value of length" and / or "value of angle" etc. are equivalent to the above numerical values.

[0085] When expressing that a certain structure is "above", "below", "upper side", "lower side", "above" or "below" another structure, the following modes may be included: a mode in which a certain structure is directly connected to the other structure; and a mode in which the other structure is included between the certain structure and the other structure. In other words, the so-called mode in which the other structure is included between the certain structure and the other structure can also be expressed as that the certain structure is indirectly connected to the other structure. In addition, expressions such as "above", "upper side" or "above" can be interchanged with expressions such as "below", "lower side" or "below". In other words, the up and down directions can also be reversed.

[0086] When the same parts and / or parts having the same functions are marked with the same reference numerals or similar reference numerals, repeated descriptions are sometimes omitted. In addition, the dimensional ratios of the drawings are sometimes different from the actual ratios. In addition, a part of the structure of the embodiment is sometimes omitted from the drawings.

[0087] In the range that no contradiction occurs, one or more modes of the embodiment and one or more modes of the modification examples may be combined. In addition, in the range that no contradiction occurs, one or more modes of the embodiment may be combined with each other. In addition, in the range that no contradiction occurs, one or more modes of the modification examples may be combined with each other.

[0088] When a plurality of steps are disclosed in a method such as a manufacturing method, other steps that are not disclosed may be performed between the disclosed steps. In addition, the order of the steps is not limited within the scope that does not cause contradiction.

[0089] Numerical ranges represented by the symbol “to” and / or “-” include the numerical values ​​before and after the symbol “to” and / or “-”. For example, a numerical range expressed as “34 to 38 mass %” is the same as a numerical range expressed as “34 mass % or more and 38 mass % or less”.

[0090] Regarding the numerical values ​​described in this disclosure, the numerical range can be limited by combining any one of the multiple upper limit candidate values ​​with any one of the multiple lower limit candidate values. In addition, even if not specifically mentioned, the numerical range can be limited by combining any two of the multiple upper limit candidate values, and the numerical range can be limited by combining any two of the multiple lower limit candidate values.

[0091] An embodiment of the present disclosure is described in the following paragraphs. An embodiment of the present disclosure is an example of an embodiment of the present disclosure. The present disclosure is not limited to only one embodiment of the present disclosure.

[0092] The metal mask disclosed in the present invention can be used for various purposes. There is no particular limitation. For example, the metal mask of the present invention can be used as a metal mask that is used to pattern an organic material on a substrate in a desired pattern in the manufacture of an organic EL display device. In addition, the metal mask disclosed in the present invention can achieve a high pixel density composition. In the organic EL display device that can be manufactured, in addition to displays such as smartphones or televisions, it also includes a device for displaying or projecting images and videos for expressing virtual reality (VR) and augmented reality (AR).

[0093] In addition, in this specification and the drawings, unless otherwise specified, an example of a metal mask used when manufacturing an organic EL display device and a method for manufacturing the same will be described as one embodiment of the present invention.

[0094] A first aspect of the present disclosure is a metal mask, wherein:

[0095] The metal mask comprises a hole area, a surrounding area and an alignment area.

[0096] The surrounding area is an area located around the porous area.

[0097] The surrounding area has a non-porous surface,

[0098] The alignment area is an area surrounded by the hole area.

[0099] The alignment area has a non-porous surface and an alignment mark,

[0100] The perforated area has a plurality of through holes and a plurality of ridges,

[0101] The ridge lines divide the adjacent through holes.

[0102] The through holes include a first through hole, a second through hole, a third through hole, and a fourth through hole.

[0103] The ridge lines include a first ridge line, a second ridge line, and a third ridge line.

[0104] The first through hole is located adjacent to a boundary between the alignment area and the perforated area.

[0105] The second through hole is located adjacent to the first through hole across the first ridge line.

[0106] The third through hole is located adjacent to the second through hole across the second ridge line.

[0107] The fourth through hole is located adjacent to the third through hole across the third ridge line.

[0108] The boundary, the centroid of the first through hole, the centroid of the second through hole, and the centroid of the third through hole are located on the straight line L1 in this order.

[0109] The straight line L1 is a straight line where the distance between the center of gravity of the first through hole and the center of gravity of the fourth through hole is the shortest.

[0110] In the section passing through the straight line L1,

[0111] The boundary has a height H0,

[0112] The first ridgeline has a height H1,

[0113] The second ridgeline has a height H2,

[0114] The third edge line has a height H3,

[0115] The ratio of the height H0 to the height H1 (H0 / H1) is 2.10 or less,

[0116] The ratio of the height H1 to the height H2 (H1 / H2) is less than 2.10,

[0117] The ratio of the height H2 to the height H3 (H2 / H3) is 2.10 or less.

[0118] Regarding a second aspect of the present disclosure, in the metal mask of the first aspect described above,

[0119] The ratio of the height H0 to the height H1 (H0 / H1) may be greater than 1.20.

[0120] The ratio of the height H1 to the height H2 (H1 / H2) may be greater than 1.10.

[0121] The ratio of the height H2 to the height H3 (H2 / H3) may be greater than or equal to 1.00.

[0122] Regarding the third aspect of the present disclosure, in the metal mask of the first aspect or the second aspect, it may be,

[0123] The through hole has a fifth through hole,

[0124] The ridgeline has a fourth ridgeline,

[0125] The fifth through hole is located adjacent to the fourth through hole across the fourth ridge line.

[0126] The boundary, the centroid of the first through hole, the centroid of the second through hole, the centroid of the third through hole, the centroid of the fourth through hole, and the centroid of the fifth through hole are located on the straight line L1 in this order,

[0127] In the section passing through the straight line L1,

[0128] The fourth edge line has a height H4,

[0129] The ratio of the height H4 to the height H0 (H0 / H4) is greater than or equal to 1.25.

[0130] Regarding a fourth aspect of the present disclosure, in the metal mask of any one of the first to third aspects described above, it may be that:

[0131] The porous region comprises a first porous region and a second porous region,

[0132] The density of the through holes in the first perforated region is higher than the density of the through holes in the second perforated region.

[0133] Regarding a fifth aspect of the present disclosure, in the metal mask of the fourth aspect described above,

[0134] The second perforated region may be located at a position dividing the adjacent first perforated region.

[0135] A sixth aspect of the present disclosure is a method for manufacturing a metal mask, wherein:

[0136] The method for manufacturing the metal mask comprises:

[0137] a step of preparing a metal plate having a first surface and a second surface located on the opposite side of the first surface; and

[0138] an etching step of forming the metal mask by etching the metal plate,

[0139] The metal mask comprises a hole area, a surrounding area and an alignment area.

[0140] The surrounding area is an area located around the porous area.

[0141] The surrounding area has a non-porous surface,

[0142] The alignment area is an area surrounded by the hole area.

[0143] The alignment area has a non-porous surface and an alignment mark,

[0144] The perforated area has a plurality of through holes and a plurality of ridges,

[0145] The ridge lines divide the adjacent through holes.

[0146] The through holes include a first through hole, a second through hole, a third through hole, and a fourth through hole.

[0147] The ridge lines include a first ridge line, a second ridge line, and a third ridge line.

[0148] The first through hole is located adjacent to a boundary between the alignment area and the perforated area.

[0149] The second through hole is located adjacent to the first through hole across the first ridge line.

[0150] The third through hole is located adjacent to the second through hole across the second ridge line.

[0151] The fourth through hole is located adjacent to the third through hole across the third ridge line.

[0152] The boundary, the centroid of the first through hole, the centroid of the second through hole, the centroid of the third through hole, and the centroid of the fourth through hole are located on the straight line L1 in this order,

[0153] The straight line L1 is a straight line where the distance between the center of gravity of the first through hole and the center of gravity of the fourth through hole is the shortest.

[0154] In the section passing through the straight line L1,

[0155] The boundary has a height H0,

[0156] The first ridgeline has a height H1,

[0157] The second ridgeline has a height H2,

[0158] The third edge line has a height H3,

[0159] The ratio of the height H0 to the height H1 (H0 / H1) is 2.10 or less,

[0160] The ratio of the height H1 to the height H2 (H1 / H2) is less than 2.10,

[0161] The ratio of the height H2 to the height H3 (H2 / H3) is 2.10 or less.

[0162] The metal mask 20 of the present disclosure includes a hole region 22, a peripheral region 23, and an alignment region 24. The hole region 22 is a region where a plurality of through holes 25 are formed. In addition, the peripheral region 23 is a region located around the hole region 22. And, the alignment region 24 is a region surrounded by the hole region 22.

[0163] Figures 1A to 1C FIG. 2 shows a top view of the second surface 20b side of the metal mask 20 according to one embodiment of the present disclosure. Figures 1A to 1C As shown, the metal mask 20 may have a substantially rectangular outline in a plan view. In addition, in the present disclosure, “plan view” means observing the metal mask 20 from a plane along the plate surface of the metal mask 20 .

[0164] In the metal mask 20 of the present disclosure, one porous region 22 may also be configured to correspond to one organic EL display device. Figure 1A As shown in FIG. 1 , the metal mask 20 may also include a plurality of perforated regions 22 arranged in a row at predetermined intervals along a direction D2 parallel to the longitudinal direction. Figure 1C As shown, the metal mask 20 may also have a plurality of rows of porous regions 22. In other words, the plurality of porous regions 22 may also be arranged in a grid. Figure 1A and Figure 1C In the embodiment, the peripheral region 23 is located around each of the perforated regions 22. By using such a metal mask 20, a plurality of organic EL display devices can be deposited on the substrate 92.

[0165] In addition, one perforated area 22 may also be configured to correspond to a plurality of organic EL display devices. Figure 1B As shown in FIG. 1 , the perforated area 22 may also include a first perforated area 22a and a second perforated area 22b. In this example, one first perforated area 22a may be configured to correspond to one organic EL display device. In addition, the second perforated area 22b may also be located at a position that divides the adjacent first perforated area 22a. In other words, the first perforated area 22a may also be surrounded by the second perforated area 22b and the surrounding area 23.

[0166] In addition, when the plurality of first perforated regions 22a are arranged in a grid pattern, the first perforated regions 22a may be surrounded only by the second perforated regions 22b.

[0167] like Figure 4As shown, the density of through holes in the first perforated area 22a and the second perforated area 22b may be different. More specifically, the density of through holes in the first perforated area 22a may be higher than the density of through holes in the second perforated area 22b. Here, the density of through holes refers to the total area of ​​through holes per unit area. In addition, the area of ​​a through hole refers to the area of ​​the through hole that is the smallest opening when viewed from above. Here, the smallest opening of a through hole when viewed from above may be, for example, Figure 3C The opening is shown surrounded by the connection portion 41 .

[0168] like Figure 1B As shown, by providing the second perforated region 22b between the plurality of first perforated regions 22a instead of the surrounding region, it is possible to suppress the occurrence of wrinkles on the metal mask 20 during vapor deposition. Therefore, it is possible to suppress a decrease in vapor deposition accuracy due to the occurrence of wrinkles.

[0169] The material constituting the metal mask 20 is not particularly limited, and examples thereof include iron alloys containing nickel, iron alloys containing chromium such as stainless steel, nickel, and nickel-cobalt alloys.

[0170] Among them, an iron alloy containing nickel is preferred. By using an iron alloy containing nickel, the thermal expansion coefficient of the metal mask 20 can be made equal to the thermal expansion coefficient of the frame 15 or the thermal expansion coefficient of the substrate 92. As a result, during the evaporation process, the generation of positional deviation caused by the difference in dimensional changes of the metal mask 20, the frame 15, and the substrate 92 can be suppressed. Therefore, the reduction in dimensional accuracy or positional accuracy of the evaporation material 98 attached to the substrate 92 caused by the positional deviation can be suppressed.

[0171] The iron alloy containing nickel is not particularly limited, and examples thereof include super Invar materials containing cobalt in addition to 30 mass % to 34 mass % nickel, Invar materials containing 34 mass % to 38 mass % nickel, low thermal expansion Fe-Ni plated alloys containing 48 mass % to 54 mass % nickel, and other iron alloys containing 0 mass % to 54 mass % nickel.

[0172] Next, the details of the hole region 22 will be described. First, before describing the hole region 22 in detail, the surfaces of the metal mask 20 of the present disclosure will be described. The metal mask 20 of the present disclosure has a first surface 20a and a second surface 20b as front and back surfaces.

[0173] In the present disclosure, the first surface 20a and the second surface 20b of the metal mask 20 are distinguished according to the diameter of the through hole 25 in the front and back surfaces of the hole area 22. Specifically, the first surface 20a refers to the surface with a large opening area of ​​the through hole 25 in the hole area 22, and the second surface 20b refers to the surface with a small opening area of ​​the through hole 25. Figure 3E As shown in FIG. 1 and FIG. 2 , when the concave surfaces of adjacent through holes on the second surface 20b merge, the range closed by the ridgeline 33 surrounding one through hole 25 can also be regarded as the opening of the through hole 25. In this case, the range closed by the ridgeline 33 becomes the opening area.

[0174] In addition, from the perspective of the vapor deposition process, the first surface 20a may be a surface of the metal mask 20 that faces the substrate 92 when the metal mask device 10 is housed in the vapor deposition device 90 (see Figure 7 ). In addition, Figure 7 As shown, the second surface 20b may be a surface of the metal mask 20 that is located on the side of the crucible 94 holding the evaporation material 98 when the metal mask device 10 is accommodated in the evaporation device 90 (see Figure 7 ).

[0175] Figure 2A and Figure 2B The diagram shows the second surface 20b viewed from the side Figure 1B The top view of the area S1 shown in FIG. Figure 2A As shown in FIG. 1 , each perforated region 22 of the metal mask 20 has a plurality of through holes 25. The through holes 25 may also be formed in a desired pattern. For example, the through holes 25 may be arranged at a predetermined pitch along two mutually intersecting directions (D1, D2). Figure 2B As shown, the through holes 25 may be arranged in a staggered manner at a predetermined pitch along two directions ( D1 , D2 ) intersecting each other.

[0176] The first direction D1 and the second direction D2 may also be respectively consistent with the length direction or the width direction of the metal mask 20. The pitch of the through holes in the perforated region 22 is not particularly limited. For example, when the metal mask 20 is used to manufacture a display (about 0.5 inches or more and about 32 inches or less) of a mobile phone, a digital camera, etc., the pitch of the through holes 25 may be about 28 μm or more and about 254 μm or less in the first direction D1 and the second direction D2, respectively.

[0177] The through holes 25 penetrate from the first surface 20a to the second surface 20b of the metal mask 20 in the thickness direction N. In the vapor deposition process, the vapor deposition material 98 is attached to the substrate 92 through the through holes 25. That is, each through hole 25 defines a portion for the vapor deposition material to be attached to the substrate 92. The pattern of the through holes 25 in the perforated region 22 corresponds to the pattern for the vapor deposition material 98 to be attached.

[0178] When the pattern for attaching the vapor deposition material 98 differs depending on the type of the vapor deposition material 98, the metal mask 20 having different patterns of the through holes 25 may be used depending on the type of the vapor deposition material 98. In addition, when the pattern for attaching the vapor deposition material 98 is the same regardless of the color, the same metal mask 20 may be used. In this case, by relatively moving the metal mask 20 and the substrate 92, vapor deposition materials 98 of different colors can be attached in the same pattern.

[0179] In the present disclosure, the perforated area 22 includes a plurality of through holes 25 and a plurality of ridges 33. Figure 2A and Figure 2B As shown, the through hole 25 includes a first through hole 25a, a second through hole 25b, a third through hole 25c, and a fourth through hole 25d. In addition, the through hole 25 may also include a fifth through hole 25e. In addition, the ridge line 33 may also be located at a position that divides adjacent through holes 25. The ridge line 33 includes a first ridge line 33a, a second ridge line 33b, and a third ridge line 33c. In addition, the ridge line 33 may also include a fourth ridge line 33d.

[0180] The first through hole 25a is located adjacent to the boundary between the alignment region 24 and the perforated region 22. The second through hole 25b is located adjacent to the first through hole 25a across the first ridge line 33a. The third through hole 25c is located adjacent to the second through hole 25b across the second ridge line 33b. The fourth through hole 25d is located adjacent to the third through hole 25c across the third ridge line 33c. The fifth through hole 25e is located adjacent to the fourth through hole 25d across the fourth ridge line 33d.

[0181] like Figure 2A and Figure 2B As shown, the straight line L1 is a straight line that passes through the boundary 24b, the center of gravity of the first through hole 25a, the center of gravity of the second through hole 25b, the center of gravity of the third through hole 25c, and the center of gravity of the fourth through hole 25d in order. In addition, the fifth through hole 25e is also located on the straight line L1.

[0182] The straight line L1 is a straight line where the distance between the center of gravity of the first through hole and the center of gravity of the fourth through hole is the shortest. Figure 2AAs shown, multiple straight lines passing through multiple through holes can be drawn, such as straight line L1 and straight line L1'. However, since the distance between the center of gravity of the first through hole and the center of gravity of the fourth through hole is long, the straight line L1' does not correspond to the straight line L1 of the present disclosure.

[0183] In addition, in the present disclosure, the “center of gravity” refers to the geometric center of the smallest opening of the through hole 25 in a plan view.

[0184] In addition, Figure 2A and Figure 2B In FIG. 1 , the position where the edge line 33 intersects the straight line L1 is indicated by a dot. Figure 2A and Figure 2B The points shown do not mean that the first edge line 33a, the second edge line 33b, the third edge line 33c, and the fourth edge line 33d are not lines but points. Figure 3A , Figure 3E The same is true in .

[0185] Next, through Figure 2A The through hole, ridge line and straight line L1 are further illustrated in detail in the enlarged view. Figure 3A Shown is the view from the second side Figure 2A A top view of region S3 is shown. Figure 3B Shown along Figure 3A The cross-sectional view of the line I-I' is shown. Figure 3A and Figure 3B In the example, the I-I' line is consistent with the L1 line. Figure 3B The cross-sectional view shown is a diagram showing an example of a cross section passing through the straight line L1. Figure 3B The cross-sectional view shown is also a cross-sectional view when the hole area 22 and the alignment area 24 are cut by the straight line L1.

[0186] in addition, Figure 3E The diagram shows the second surface 20b viewed from the side Figure 3A The stereogram of the area S4 shown in FIG. Figure 3E As shown, the ridge lines 33 divide the adjacent through holes 25. Figure 3E As shown in FIG. 2 , on the second surface 20 b side of the perforated region 22, each through hole 25 may be surrounded by a plurality of ridges 33. Figure 3E As shown, the straight line L1 may pass through a particularly low-height portion of the ridge line 33. The low-height portion of the ridge line 33 tends to have weak mechanical strength and is prone to wrinkles and bends.

[0187] In the present disclosure, the heights of the first ridgeline 33a, the second ridgeline 33b, and the third ridgeline 33c in the cross section passing through the straight line L1 defined as above are specified. Figure 3B As shown, in the present disclosure, the height of the ridge line 33 tends to become higher as it approaches the alignment region 24. In other words, in the present disclosure, the height of the ridge line 33 may gradually decrease at a predetermined ratio as it moves away from the alignment region 24. The height relationship will be described in detail below.

[0188] In the cross section passing through the straight line L1, the boundary 24b has a height H0. The height H0 is the height from the first surface 20a to the second surface 20b in the alignment region 24. The height H0 may preferably be 50 μm or less, 45 μm or less, 40 μm or less, 35 μm or less, 30 μm or less, 25 μm or less, or 20 μm or less. In addition, the height H0 may preferably be 2.5 μm or more, 5 μm or more, 10 μm or more, or 15 μm or more. By increasing the height H0, there is a tendency for the strength of the metal mask 20 to be further improved. As a result, for example, there is a tendency for deformation or fracture of the porous region 22 to be further suppressed.

[0189] The height H0 may be equal to the thickness of the portion of the metal mask 20 where the first recess 30 and the second recess 35 are not formed. In other words, the height H0 may be equal to the thickness of the surrounding region 23 or the thickness of the metal plate 51 of the metal mask 20.

[0190] In the cross section passing through the straight line L1, the first ridgeline 33a has a height H1. The height H1 is the height from the first surface 20a to the top of the first ridgeline 33a. The height H1 may preferably be 45 μm or less, 40 μm or less, 35 μm or less, 30 μm or less, 25 μm or less, or 20 μm or less. In addition, the height H1 may preferably be 2.5 μm or more, 5 μm or more, 10 μm or more, 12.5 μm or more, 15 μm or more, or 17.5 μm or more.

[0191] In the cross section passing through the straight line L1, the second ridgeline 33b has a height H2. The height H2 is the height from the first surface 20a to the top of the second ridgeline 33b. The height H2 may preferably be 40 μm or less, 35 μm or less, 30 μm or less, 25 μm or less, 20 μm or less, 17.5 μm or less, or 15 μm or less. In addition, the height H2 may preferably be 2.5 μm or more, 5 μm or more, 7.5 μm or more, 10 μm or more, or 12.5 μm or more.

[0192] In the cross section passing through the straight line L1, the third ridgeline 33c has a height H3. The height H3 is the height from the first surface 20a to the top of the third ridgeline 33c. The height H3 may preferably be 35 μm or less, 30 μm or less, 25 μm or less, 20 μm or less, 17.5 μm or less, 15 μm or less, or 12.5 μm or less. In addition, the height H3 may preferably be 2.5 μm or more, 5 μm or more, 7.5 μm or more, 10 μm or more, or 12.5 μm or more.

[0193] In the cross section passing through the straight line L1, the fourth ridgeline 33d has a height H4. The height H4 is the height from the first surface 20a to the top of the fourth ridgeline 33d. The height H4 may preferably be 30 μm or less, 25 μm or less, 20 μm or less, 17.5 μm or less, 15 μm or less, 12.5 μm or less, or 10 μm or less. In addition, the height H4 may preferably be 2.5 μm or more, 5 μm or more, or 7.5 μm or more.

[0194] By making the heights H0, H1, H2, H3, and H4 equal to or greater than the lower limit, there is a tendency to further suppress deformation or breakage of the porous region 22. In addition, by making the heights H0, H1, H2, H3, and H4 equal to or less than the upper limit, the porous region 22 can be made thinner by etching or the like, and there is a tendency to suppress adhesion of the vapor deposition material 98 to the second wall surface 36 of the second recess 35 during the vapor deposition process. Therefore, there is a tendency to further improve the utilization efficiency of the vapor deposition material 98 and the vapor deposition accuracy.

[0195] Furthermore, the ranges of the heights H0, H1, H2, H3, and H4 may be limited by a combination of any one of the plurality of candidate values ​​for the lower limit described above and any one of the plurality of candidate values ​​for the upper limit described above.

[0196] The ratio of height H0 to height H1 (H0 / H1) is 2.10 or less, preferably 2.00 or less, 1.90 or less, 1.80 or less, 1.70 or less, or 1.60 or less. The ratio of height H0 to height H1 (H0 / H1) is preferably 0.90 or more, 1.00 or more, 1.05 or more, 1.10 or more, 1.15 or more, 1.20 or more, 1.25 or more, 1.30 or more, 1.35 or more, or 1.40 or more.

[0197] The ratio of height H1 to height H2 (H1 / H2) is 2.10 or less, preferably 2.00 or less, 1.90 or less, 1.80 or less, 1.70 or less, 1.60 or less, 1.50 or less, 1.40 or less, or 1.30 or less. The ratio of height H1 to height H2 (H1 / H2) is preferably 0.90 or more, 1.00 or more, 1.05 or more, 1.10 or more, 1.15 or more, 1.20 or more, 1.25 or more, or 1.30 or more.

[0198] The ratio of height H2 to height H3 (H2 / H3) is 2.10 or less, preferably 2.00 or less, 1.90 or less, 1.80 or less, 1.70 or less, 1.60 or less, 1.50 or less, 1.40 or less, or 1.30 or less. The ratio of height H2 to height H3 (H2 / H3) is preferably 0.90 or more, 1.00 or more, 1.05 or more, 1.10 or more, or 1.15 or more.

[0199] The ratio of height H3 to height H4 (H3 / H4) is preferably 2.10 or less, 2.00 or less, 1.90 or less, 1.80 or less, 1.70 or less, 1.60 or less, 1.50 or less, 1.40 or less, or 1.30 or less. The ratio of height H3 to height H4 (H3 / H4) is preferably 0.90 or more, 1.00 or more, 1.05 or more, 1.10 or more, or 1.15 or more.

[0200] The ratio of the height H0 to the height H3 (H0 / H3) may preferably be 5.50 or less, 5.00 or less, 4.50 or less, 4.00 or less, or 3.50 or less. The ratio of the height H0 to the height H3 (H0 / H3) may preferably be 1.25 or more, 1.50 or more, 1.75 or more, 2.00 or more, or 2.25 or more.

[0201] The ratio of height H0 to height H4 (H0 / H4) may preferably be 6.00 or less, 5.50 or less, 5.00 or less, 4.50 or less, 4.00 or less, or 3.50 or less. The ratio of height H0 to height H4 (H0 / H4) may preferably be 1.25 or more, 1.50 or more, 1.75 or more, 2.00 or more, 2.25 or more, 2.50 or more, 2.75 or more, or 3.00 or more.

[0202] By making the height ratio (H0 / H1), the height ratio (H1 / H2), the height ratio (H2 / H3), and the height ratio (H3 / H4) equal to or greater than the above lower limit, the porous region 22 can be made thinner by etching or the like, and there is a tendency to suppress the deposition material 98 from adhering to the second wall surface 36 of the second recess 35 during the deposition process. Therefore, there is a tendency to further improve the utilization efficiency of the deposition material 98 and the deposition accuracy. In addition, by making the ratio (H0 / H1), the ratio (H1 / H2), the ratio (H2 / H3), and the ratio (H3 / H4) equal to or less than the above upper limit, there is a tendency to further suppress the deformation or fracture of the porous region 22.

[0203] Furthermore, the lower limits of one or more of the ratio (H0 / H1), the ratio (H1 / H2), the ratio (H2 / H3), and the ratio (H3 / H4) may be 1.05 or more.

[0204] In addition, the ratio (H0 / H1), the ratio (H1 / H2), the ratio (H2 / H3), and the ratio (H3 / H4) may be limited by a combination of any one of the above-mentioned multiple lower limit candidate values ​​and any one of the above-mentioned multiple upper limit candidate values.

[0205] Next, the measurement method of the heights H0, H1, H2, H3 and H4 is described. First, a sample 20s for measuring the heights H0, H1, H2, H3 and H4 is collected from the metal mask 20. Next, the cross section of the portion whose height is to be measured is observed using a scanning electron microscope, etc., thereby the heights H0, H1, H2, H3 and H4 can be measured. Then, for a plurality of samples 20s, the heights H0, H1, H2, H3 and H4 are measured based on the above method, and the average value is calculated. The average value can be used as the heights H0, H1, H2, H3 and H4. In addition, the magnification of the scanning electron microscope can also be 500 to 2000 times. In addition, as a scanning electron microscope, for example, FlexSEM1000 of Hitachi High-Technologies Co., Ltd. can be used.

[0206] For example, when the second wall surfaces 36 of the adjacent second recesses 35 do not merge, the portion remaining as the second surface 20b between the adjacent second recesses 35 becomes the ridge line 33 that divides the adjacent through holes 25. In this case, the height of the ridge line 33 may also be a constant height from the first surface 20a to the second surface 20b.

[0207] On the other hand, when the second wall surfaces 36 of the adjacent second recesses 35 merge, as shown in FIG. Figure 3E As shown in FIG. 3 , the ridge line 33 is formed by the merged second wall surface 36. Figure 3EAs shown in FIG. 1 , the height of the ridge line 33 formed by the merged second wall surface 36 may not be constant but may vary according to the distance from the center of the through hole 25. For example, Figure 3E As shown, the longer the distance from the center of the through hole 25 to the ridge line 33 is, the higher the height of the ridge line 33 is.

[0208] Figure 3C It is along Figure 3A A cross-sectional view taken along line II-II' is shown. Figure 3C The cross-sectional view shown is a cross-sectional view when the hole region 22 is cut in a direction crossing the through hole 25 and the ridge line 33. The II-II' line may be substantially parallel to the boundary indicating one side of the cross-sectional view in the boundary existing in a rectangle around the alignment region 24. In the II-II' line, the height of the ridge line 33 may be substantially the same.

[0209] Figure 3D It is along Figure 3A A cross-sectional view along line III-III' is shown. Figure 3D The cross-sectional view shown is a cross-sectional view when the perforated region 22 is cut in a direction passing through the through hole 25 and the tops 32a, 32b, 32c, and 32d. Here, the tops 32a, 32b, 32c, and 32d are portions with a maximum height in the perforated region 22. Alternatively, the tops 32a, 32b, 32c, and 32d may be portions with a maximum height in the ridge line 33. Figure 3D The cross-sectional view shown is also a cross-sectional view through a plurality of through holes. However, the distance between the through holes along line III-III' is not the shortest. Therefore, line III-III' is not the straight line L1.

[0210] like Figure 3B to Figure 3D As shown, the through hole 25 may be formed by connecting the first recess 30 on the first surface 20a side with the second recess 35 on the second surface 20b side. In this case, the area of ​​the first recess 30 when viewed from above may gradually decrease from the first surface 20a toward the second surface 20b. In addition, the area of ​​the second recess 35 when viewed from above may gradually decrease from the second surface 20b toward the first surface 20a.

[0211] In addition, the first recessed portion 30 may be configured as a recessed portion having a smaller diameter than the second recessed portion 35. Thus, the first surface 20a has a smaller area of ​​the metal plate 51 that is not etched in the perforated region 22.

[0212] On the first surface 20a side of the perforated region 22, two adjacent through holes 25 may be separated along the surface direction of the first surface 20a. In other words, the first surface 51a of the metal plate 51 may remain between two adjacent first recesses 30. Such through holes 25 may be formed by etching the metal plate 51 so that the first surface 51a of the metal plate 51 remains between two adjacent first recesses 30, as in the manufacturing method described later. The first surface 51a of the metal plate 51 corresponds to the first surface 20a of the metal mask 20.

[0213] In addition, the second recessed portion 35 may be configured as a recessed portion having a larger diameter than the first recessed portion 30. Thus, the second surface 20b has a larger area of ​​the metal plate 51 that is not etched in the hole region 22.

[0214] On the second surface 20b side of the perforated region 22, the second recesses 35 of two adjacent through holes 25 may be connected. In other words, the second surface 51b of the metal plate 51 constituting the metal mask 20 may not remain between the two adjacent second recesses 35. Such a through hole 25 may also be formed by etching the metal plate 51 in such a manner that the second surface 51b of the metal plate 51 does not remain between the two adjacent second recesses 35 as in the manufacturing method described later. The second surface 51b of the metal plate 51 corresponds to the second surface 20b of the metal mask 20.

[0215] In addition, the first surface 51a of the metal plate 51 may not remain on the entire second surface 20b in the perforated region 22. In other words, the second surface 20b of the metal plate 51 may be etched over the entire perforated region 22. Thus, there is a tendency that the utilization efficiency of the vapor deposition material 98 is further improved.

[0216] like Figure 3B to Figure 3E As shown, the first wall surface 31 of the first recess 30 and the second wall surface 36 of the second recess 35 may also be connected via a circumferential connecting portion 41. The connecting portion 41 is an edge portion connecting the first recess 30 and the second recess 35. In the connecting portion 41, the expansion direction of the wall surface of the through hole 25 changes discontinuously. In one embodiment of the present disclosure, it may also be that in the connecting portion 41, the opening area of ​​the through hole 25 when viewed from above is the smallest. In addition, outside the connecting portion 41, the opening area of ​​the through hole 25 when viewed from above may also be the smallest.

[0217] In the vapor deposition process, the vapor deposition material 98 adheres to the substrate 92 through the second recess 35. At this time, there is a case where a part of the vapor deposition material 98 does not reach the substrate 92 but adheres to the second wall surface 36. The higher the ratio of the vapor deposition material 98 adhering to the second wall surface 36, the more likely it is that the utilization efficiency of the vapor deposition material 98 in the vapor deposition process is reduced, or the vapor deposition accuracy is reduced.

[0218] To suppress this, Figure 3E As shown, it is preferable that the minimum angle θmin is larger. Here, the minimum angle θmin is the smallest angle among the angles θ formed by the straight line K1 and the thickness direction N in a certain through hole 25. In addition, the straight line K1 is a straight line passing through an arbitrary position P2 of the second wall surface 36 and an arbitrary position P1 of the connecting portion 41 in a certain through hole 25. The straight line K1 can be determined for each through hole 25. In addition, the minimum angle θmin can also be determined for each through hole 25.

[0219] The first through hole 25a has an angle θ1. The angle θ1 is the minimum angle θmin in the first through hole 25a. The angle θ1 may preferably be greater than 17.5 degrees, greater than 20.0 degrees, greater than 22.5 degrees, greater than 25.0 degrees, or greater than 30.0 degrees. The angle θ1 may preferably be less than 50.0 degrees, less than 47.5 degrees, less than 45.0 degrees, less than 42.5 degrees, less than 40.0 degrees, or less than 37.5 degrees.

[0220] The second through hole 25b has an angle θ2. The angle θ2 is the minimum angle θmin in the second through hole 25b. The angle θ2 may preferably be greater than 20.0 degrees, greater than 25.0 degrees, greater than 35.0 degrees, or greater than 40.0 degrees. The angle θ2 may preferably be less than 60.0 degrees, less than 57.5 degrees, less than 55.0 degrees, less than 52.5 degrees, less than 50.0 degrees, less than 47.5 degrees, or less than 45.0 degrees.

[0221] The third through hole 25c has an angle θ3. The angle θ3 is the minimum angle θmin in the third through hole 25c. The angle θ3 may preferably be greater than 20.0 degrees, greater than 25.0 degrees, greater than 35.0 degrees, or greater than 40.0 degrees. The angle θ3 may preferably be less than 65.0 degrees, less than 62.5 degrees, less than 60.0 degrees, less than 57.5 degrees, less than 55.0 degrees, less than 52.5 degrees, less than 50.0 degrees, less than 47.5 degrees, or less than 45.0 degrees.

[0222] The fourth through hole 25d has an angle θ4. The angle θ4 is the minimum angle θmin in the fourth through hole 25d. The angle θ4 may preferably be greater than 20.0 degrees, greater than 25.0 degrees, greater than 35.0 degrees, greater than 40.0 degrees, greater than 45.0 degrees, or greater than 50.0 degrees. The angle θ4 may preferably be less than 70.0 degrees, less than 67.5 degrees, less than 65.0 degrees, less than 62.5 degrees, less than 60.0 degrees, less than 57.5 degrees, or less than 55.0 degrees.

[0223] By making the angles θ1, θ2, θ3, and θ4 equal to or greater than the lower limit, there is a tendency that the utilization efficiency of the vapor deposition material 98 and the vapor deposition accuracy in the vapor deposition process are further improved. In addition, by making the angles θ1, θ2, θ3, and θ4 equal to or less than the upper limit, there is a tendency that the deformation or breakage of the perforated region 22 can be further suppressed. In addition, the range of the angles θ1, θ2, θ3, and θ4 can also be limited by a combination of any one of the multiple lower limit candidate values ​​and any one of the multiple upper limit candidate values.

[0224] The ratio of angle θ4 to angle θ1 (θ4 / θ1) may preferably be 1.00 or more, 1.05 or more, 1.10 or more, 1.15 or more, 1.20 or more, 1.25 or more, 1.30 or more, 1.40 or more, or 1.50 or more. In addition, the ratio of angle θ4 to angle θ1 (θ4 / θ1) may preferably be 3.50 or less, 3.00 or less, 2.75 or less, 2.50 or less, 2.25 or less, or 2.00 or less.

[0225] By making the ratio (θ4 / θ1) equal to or greater than the above lower limit, there is a tendency to further improve the utilization efficiency and deposition accuracy of the vapor deposition material 98. In addition, by making the ratio (θ4 / θ1) equal to or less than the above upper limit, there is a tendency to further suppress deformation or breakage of the porous region 22.

[0226] There is no particular limitation on the method of increasing the minimum angle θmin, and for example, the thickness of the metal mask 20 can be reduced, or the ridgeline 33 can be lowered. As a result, the height of the second wall surface 36 of the second recess 35 becomes smaller. Therefore, the minimum angle θmin tends to become larger. There is no particular limitation on the method of lowering the ridgeline 33, and for example, the etching amount can be adjusted in such a way that the second wall surfaces 36 of two adjacent second recesses 35 merge.

[0227] The surrounding area 23 is an area located around the porous area 22. The surrounding area 23 may also be located at a position surrounding the porous area 22. The surrounding area 23 may also be an area that supports the porous area 22 by being located around the porous area 22. In addition, the surrounding area 23 may also be an area that intentionally prevents the vapor deposition material 98 from passing through. From this point of view, the surrounding area 23 mainly has a non-porous surface in which no through holes are formed. However, for various purposes, the surrounding area 23 may also have a non-porous surface, and partially have through holes other than the non-porous surface that are not intended to allow the vapor deposition material to pass through. In addition, a recessed portion formed by half etching or the like may also be formed on the non-porous surface. In the present disclosure, a "non-porous surface" refers to a surface that does not have a through hole.

[0228] As described later, the metal mask 20 is fixed to the frame 15 to form the metal mask device 10. The peripheral region 23 may also have an end portion 23a fixed to the frame 15. Figure 1A As shown, in the case where the metal mask 20 is in the shape of a long bar, the end portions 23a may be located at both ends in the length direction D2. In addition, the end portions 23a may also have a U-shaped cutout or the like. Figure 1C As shown, when the metal mask 20 has a plurality of rows of the hole regions 22, one metal mask 20 may be mounted on one frame 15. In this case, the end portion 23a may be located at the periphery of the metal mask 20.

[0229] The end portion 23a may be configured so that a portion thereof can be cut off after the metal mask 20 is fixed to the frame 15. Figures 1A to 1C As shown, the end portion 23a may be formed integrally with the other surrounding regions 23, or may be formed of a member different from the other surrounding regions. In this case, the end portion may also be joined to the other parts of the surrounding region by welding, for example.

[0230] The height from the first surface 20a to the second surface 20b in the surrounding area is preferably 45 μm or less, 40 μm or less, 35 μm or less, 30 μm or less, 25 μm or less, or 20 μm or less. By reducing the height of the surrounding area, the porous area 22 can be made thinner by etching or the like, and there is a tendency to suppress the deposition material 98 from adhering to the second wall surface 36 of the second recess 35 during the deposition process.

[0231] The height from the first surface 20a to the second surface 20b in the peripheral region may preferably be 2.5 μm or more, 5 μm or more, 10 μm or more, or 15 μm or more. By increasing the height of the peripheral region, there is a tendency to further improve the strength of the metal mask 20. Thus, for example, there is a tendency to further suppress deformation or fracture of the porous region 22.

[0232] The alignment region 24 is a region where an alignment mark 24a is formed. The alignment region 24 has a non-porous surface and an alignment mark 24a. Regarding the alignment mark 24a, any pattern that can be detected by various conventionally known detectors such as an image detector can be exemplified without limitation. Regarding the use of the alignment mark 24a, conventionally known uses such as facilitating alignment can also be exemplified without limitation. Regarding the alignment mark 24a, as an example, any pattern formed by a through hole, a concave portion, a convex portion, etc. can be cited.

[0233] In addition, in the alignment region 24, an alignment mark 24a is formed on the non-porous surface. In the case where the alignment mark 24a has a through hole, the through hole is a through hole that is not intended to allow the vapor deposition material to pass through. That is, the alignment region 24 may also have a non-porous surface and partially have a through hole that is not intended to allow the vapor deposition material to pass through. In addition, a recessed portion formed by half etching or the like may also be formed on the non-porous surface.

[0234] In the present disclosure, the alignment area 24 is the area surrounded by the apertured area 22. In particular, Figure 1B As shown in FIG. 1 , in the case of a continuous long strip of perforated area 22, the surrounding area 23 is relatively narrow. Therefore, it is conceivable to form a non-perforated surface in the perforated area 22 and form the alignment mark 24a there. Figure 1B As shown in the figure, in the case of a continuous long perforated area 22, it is preferable to form an alignment area 24 surrounded by the perforated area 22. However, by forming it in this way, deformation caused by strength difference is likely to occur near the boundary between the perforated area 22 and the alignment area 24 having a non-perforated surface. Therefore, it is preferable to configure as in the present disclosure that the height of the ridge line 33 gradually decreases at a predetermined ratio as it moves away from the alignment area 24.

[0235] The method for manufacturing a metal mask according to an embodiment of the present disclosure includes a preparation step of preparing a metal plate 51 having a first surface 51 a and a second surface 51 b located opposite to the first surface 51 a , and an etching step of forming the metal mask 20 by etching the metal plate 51 .

[0236] In addition, a method of manufacturing the metal mask 20 by etching will be described below, but the metal mask 20 may be formed by etching or by laser processing.

[0237] Main reference Figure 5A to Figure 5E A method for manufacturing the metal mask 20 according to one embodiment of the present disclosure will be described. Figure 5A 2 is a schematic diagram showing a manufacturing apparatus 70 for manufacturing a metal mask 20 using a metal plate 51 together with its processing sequence. Figure 5A, an example of continuously supplying the metal plate 51 from the resist film forming device 71 to the stripping device 74 is shown. However, the manufacturing method of the metal mask 20 disclosed in the present invention is not limited to this, and for example, the metal plate 51 may be wound up to form a wound body each time it passes through the processing of each device. In addition, when the metal plate 51 is supplied to each device, the metal plate 51 may be unwound from the wound body for supply.

[0238] Hereinafter, each step of the method for manufacturing the metal mask 20 will be described in detail.

[0239] First, a metal plate 51 having a desired thickness is prepared (preparation step). The metal plate 51 may be in the form of a winding body 50 wound around a core 52. There are no particular limitations on the method for producing the metal plate 51 having a desired thickness, and examples thereof include rolling methods, plating film forming methods, and the like.

[0240] Next, using the resist film forming apparatus 71, resist films 53a and 53b are formed on the first surface 51a and the second surface 51b of the metal plate 51 ( Figure 5B Specifically, the resist films 53a and 53b may be formed by pasting a dry film resist on the first surface 51a and the second surface 51b. In addition, the resist films 53a and 53b may be formed by applying a coating liquid containing a photosensitive resist material on the first surface 51a and the second surface 51b and drying the coating liquid.

[0241] There is no particular limitation on the dry film resist or coating liquid, and any conventionally known dry film resist or coating liquid can be used. In addition, the resist films 53a and 53b formed in this way can be either negative resists or positive resists. Among them, negative resists are preferably used.

[0242] The thickness of the resist films 53a and 53b may be 15 μm or less, 10 μm or less, 6 μm or less, or 4 μm or less. In addition, the thickness of the resist films 53a and 53b may be 1 μm or more, 3 μm or more, 5 μm or more, or 7 μm or more. The range of the thickness of the resist films 53a and 53b may also be limited by a combination of any one of the above-mentioned multiple upper limit candidate values ​​and any one of the above-mentioned multiple lower limit candidate values.

[0243] Next, the resist films 53a and 53b are exposed and developed using the exposure / development device 72. Figure 5CAs shown, a first resist pattern 53c can be formed on the first surface 51a, and a second resist pattern 53d can be formed on the second surface 51b. For example, when a negative resist film is used, a glass substrate that prevents light from penetrating the region to be removed in the resist film can be arranged on the resist film, and the resist film can be exposed through the glass substrate, and then the resist film can be developed.

[0244] Next, the metal plate 51 is etched using the first resist pattern 53c and the second resist pattern 53d as masks using the etching device 73 (etching step). The etching step may include a first surface etching step and a second surface etching step.

[0245] exist Figure 5D 1 is a schematic diagram showing an example of the first surface etching process. In the first surface etching process, an etching liquid is used to etch the area of ​​the first surface 51a that is not covered by the first resist pattern 53c. At this time, the second surface 51b may also be covered with a resin or the like that is resistant to the etching liquid.

[0246] The etching liquid causes the first surface 51a not covered by the first resist pattern 53c to be eroded ( Figure 5D ). Thus, a plurality of first recesses 30 are formed on the first surface 51a. In addition, the etching of the metal plate 51 can be performed isotropically from the holes of the resist pattern toward various directions. Therefore, the cross-sectional areas of the first recesses 30 and the second recesses 35 at various positions along the thickness direction of the metal mask 20 are gradually reduced as they proceed from the surface to the thickness direction.

[0247] exist Figure 5E , a schematic diagram showing an example of the second surface etching process is shown. In the second surface etching process, an etching liquid is used to etch the area of ​​the second surface 51b that is not covered by the second resist pattern 53d. At this time, the film or the like covering the second surface 51b in the first surface etching process may be peeled off in advance. In addition, the first surface 51a may also be covered with a resin 54 or the like that is resistant to the etching liquid.

[0248] The etching liquid causes the first surface 51a not covered by the first resist pattern 53c to be eroded ( Figure 5E ). Thus, the second recess 35 is formed on the second surface 51b. Furthermore, the first recess 30 and the second recess 35 are communicated with each other, thereby forming the through hole 25.

[0249] The etching liquid is not particularly limited as long as it is a conventionally known etching liquid, and examples thereof include etching liquids containing ferric chloride solution and hydrochloric acid.

[0250] In the second side etching process, if Figure 5EAs shown, etching may be performed until two adjacent second recesses 35 are connected. At the portion where two adjacent second recesses 35 are connected, the two adjacent second recesses 35 merge to form a ridge 33. In addition, the ridge 33 is separated from the second resist pattern 53d, and at the top of the ridge 33, erosion caused by etching also proceeds in the thickness direction of the metal plate 51. Thus, the second resist pattern 53d is peeled off from the metal plate 51. In addition, the second surface 51b may be partially left between two adjacent second recesses 35.

[0251] Furthermore, the resist pattern or the resin resistant to the etching solution is peeled off from the metal plate 51 using the peeling device 74. Then, a separation step is performed in which the long metal plate 51 is cut using the separation device 75, thereby separating the metal mask 20 composed of a single metal plate from the metal plate 51. In this way, the metal mask 20 can be obtained.

[0252] The metal mask device 10 according to one embodiment of the present disclosure includes a frame 15 and the metal mask 20 provided on the frame 15. The metal mask 20 may be provided on the frame 15 in such a manner that the second surface 20b contacts the frame 15. Figure 6 2 shows a top view of the metal mask device 10 viewed from the first surface 20a side of the metal mask 20. Figure 7 A cross-sectional view showing a vapor deposition device is shown.

[0253] In the metal mask device 10 of the present disclosure, a plurality of metal masks 20 ( Figure 6 In this case, the plurality of metal masks 20 may be arranged in the width direction (the first direction D1) intersecting the length direction (the second direction D2) of the metal mask 20. In addition, each metal mask 20 may be fixed to the frame 15 at both ends 23a of the metal mask 20 in the length direction D2.

[0254] In addition, it is also possible to install a frame 15 Figure 1C Here, the metal mask 20 may be fixed to the frame 15 at the end 23a of the peripheral region 23.

[0255] The method of fixing to the frame 15 is not particularly limited, and examples thereof include welding and the like.

[0256] The metal mask device 10 may also include a component that is fixed to the frame 15 and partially overlaps with the metal mask 20 in the thickness direction of the metal mask 20. Examples of such a component are not particularly limited, and examples thereof include a component that extends in a direction intersecting the length direction of the metal mask 20 and supports the metal mask 20, and a component that overlaps with a gap between two adjacent metal masks.

[0257] Next, refer to Figure 7 A method of manufacturing an organic EL display device using the metal mask 20 of the present disclosure will be described. The organic EL display device may include a substrate 92 and a vapor deposition layer including a vapor deposition material 98 provided in a pattern in a stacked state.

[0258] The method for manufacturing the organic EL display device according to one embodiment of the present disclosure is not particularly limited, and includes, for example, a vapor deposition step of vapor depositing the vapor deposition material 98 on a substrate such as the substrate 92 using the metal mask 20 .

[0259] In the vapor deposition process, first, the metal mask device 10 is arranged so that the metal mask 20 and the substrate 92 face each other. Figure 7 As shown, the first surface 20a of the metal mask 20 may be opposed to the substrate 92. Here, the metal mask 20 such as a glass substrate of the substrate 92 is a vapor deposition object.

[0260] like Figure 7 As shown, when the metal mask device 10 is housed in the evaporation device 90, the surface of the metal mask 20 facing the substrate 92 is the first surface 20a, and the surface of the metal mask 20 located on the crucible 94 side holding the evaporation material 98 is the second surface 20b. In the evaporation device 90, the metal mask 20 is arranged on the surface of the substrate 92 on the crucible 94 side. Here, the metal mask 20 and the substrate 92 can also be closely attached by magnetic force.

[0261] In the evaporation device 90, a crucible 94 for storing the evaporation material 98 and a heater 96 for heating the crucible 94 may be arranged below the metal mask device 10. Here, as an example, the evaporation material 98 may also be an organic light-emitting material. The evaporation material 98 in the crucible 94 is vaporized or sublimated by the heating from the heater 96. The vaporized or sublimated evaporation material 98 is attached to the substrate 92 through the through hole 25 of the metal mask 20. Thus, the evaporation material 98 is formed on the surface of the substrate 92 in a desired pattern corresponding to the position of the through hole 25 of the metal mask 20. In addition, in the evaporation process, the interior of the evaporation device 90 may also be a vacuum atmosphere.

[0262] When different types of deposition materials are to be deposited according to pixels such as RGB, different metal masks 20 may be used according to the types of deposition materials 98 to form the deposition materials 98 on the surface of the substrate 92. For example, the deposition material 98 for red, the deposition material 98 for green, and the deposition material 98 for blue may be sequentially deposited on the substrate 92. In addition, the metal mask 20 (metal mask device 10) and the substrate 92 may be relatively moved little by little along the arrangement direction of the through holes 25 (the aforementioned one direction), and the deposition material 98 for red, the deposition material 98 for green, and the deposition material 98 for blue may be sequentially deposited.

[0263] In addition, in the method for manufacturing an organic EL display device, in addition to the vapor deposition step of vapor-depositing the vapor deposition material 98 on a substrate such as a substrate 92 using the metal mask 20, various steps may be included. For example, the method for manufacturing an organic EL display device may also include a step of forming a first electrode on a substrate. The vapor deposition layer is formed on the first electrode. In addition, the method for manufacturing an organic EL display device may also include a step of forming a second electrode on the vapor deposition layer. In addition, the method for manufacturing an organic EL display device may also include a sealing step of sealing the first electrode, the vapor deposition layer, and the second electrode provided on the substrate 92.

[0264] The vapor deposition layer formed on the substrate 92 or the like using the metal mask 20 is not limited to the light-emitting layer formed by vapor deposition of the above-mentioned organic light-emitting material, but may also include other layers. For example, the vapor deposition layer may include a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, etc. in order from the first electrode side. In this case, the vapor deposition process using the metal mask 20 corresponding to each layer may also be implemented separately.

[0265] In addition, various changes can be made to the above-mentioned embodiment. Below, the modified example is described with reference to the accompanying drawings as needed. In the following description and the accompanying drawings used in the following description, for the parts that can be constructed in the same way as the above-mentioned embodiment, the same reference numerals as those used for the corresponding parts in the above-mentioned embodiment are used, and repeated descriptions are omitted. In addition, in the case where it is obvious that the effects obtained in the above-mentioned embodiment can also be obtained in the modified example, its description is sometimes omitted.

[0266] (Variation Example)

[0267] As a first modification, the step of forming the second recessed portion 35 may be performed before the step of forming the first recessed portion 30 , or the step of forming the first recessed portion 30 and the step of forming the second recessed portion 35 may be performed in parallel.

[0268] As a second modification, a through hole may be formed from the inside of the first recess 30 or the second recess 35 to the other surface of the metal plate 51 by irradiating the first recess 30 or the second recess 35 with a laser beam using a laser irradiator.

[0269] As a third variation, the shape of the through hole 25 may be a circle or an ellipse, or other polygonal shape. Figure 2A The grid-like Figure 2B In addition to the staggered arrangement shown, a conventionally known arrangement such as a diamond type arrangement may be used.

[0270] Example

[0271] Hereinafter, the present disclosure will be described in more detail using examples and comparative examples. The present disclosure is not limited to the following examples in any way.

[0272] (Example)

[0273] By the above-mentioned method for manufacturing a metal mask, the first recess and the second recess are formed on the metal plate, and a metal mask having a through hole formed by the first recess and the second recess is manufactured. At this time, the height H0 of the boundary in the cross section passing through the straight line L1, the height H1 of the first ridge line, the height H2 of the second ridge line, the height H3 of the third ridge line, and the height H4 of the fourth ridge line have the prescribed height relationship described in Table 1.

[0274] In the metal mask, Figure 1B As shown, the perforated region includes a first perforated region and a second perforated region having different through hole densities. In addition, the second perforated region is located at a position that divides the adjacent first perforated region. The metal plate as the raw material of the metal mask is an Invar alloy material.

[0275] (Comparative Example)

[0276] A metal mask was obtained in the same manner as in the example except that the height H0 of the boundary in the cross section passing through the straight line L1, the height H1 of the first ridgeline, the height H2 of the second ridgeline, the height H3 of the third ridgeline, and the height H4 of the fourth ridgeline had the prescribed height relationship described in Table 1.

[0277] (evaluate)

[0278] From the metal mask manufacturing process to the metal mask being mounted and welded to the frame, it was visually confirmed whether the metal mask was deformed or broken, and the results are shown in Table 1. In addition, folds and wrinkles were confirmed as deformations generated in the metal mask.

[0279] Here, "crease" refers to a slight depression or bend that occurs locally in a prescribed process. In addition, "wrinkle" refers to a stripe that occurs locally in a prescribed process. These creases or wrinkles may occur when the strength of the metal mask is insufficient or when stress is concentrated on a weak portion. It should be noted that the above-mentioned "prescribed process" refers to a series of processes including manufacturing a metal mask, mounting and welding the manufactured metal mask on a frame to manufacture a metal mask device, using the obtained metal mask device for vapor deposition, and cleaning the metal mask device and using it again for vapor deposition.

[0280] [Table 1]

[0281]

[0282] In the metal mask of the embodiment, the ridge lines of the hole area near the alignment area have a predetermined height relationship. Therefore, it is considered that the strength of the boundary portion between the hole area and the alignment area is further improved. As a result, as shown in Table 1, no deformation or breakage was confirmed in the metal mask from the metal mask manufacturing process to the metal mask being mounted and welded to the frame.

[0283] On the other hand, in the comparative example where the ridges do not have a predetermined height relationship, it is known that the metal mask has deformation such as folds or wrinkles. The reason for this is that in the comparative example where the ridges do not have a predetermined height relationship, there is a strength difference between the hole area and the alignment area, so stress is concentrated on the boundary portion of the hole area and the alignment area, resulting in folds or wrinkles. However, the reason is not limited to this.

[0284] Possibility of Industrial Application

[0285] The metal mask of the present invention has industrial applicability as a metal mask used in the production of an organic EL display device, etc.

[0286] Description of symbols

[0287] 10…metal mask device; 15…frame; 20…metal mask; 20a…first surface; 20b…second surface; 20s…sample; 22…perforated area; 22a…first perforated area; 22b…second perforated area; 23…peripheral area; 23a…end; 24…alignment area; 24a…alignment mark; 24b…boundary; 25…through hole; 25a…first through hole; 25b…second through hole; 25c…third through hole; 25d…fourth through hole; 25e…fifth through hole; 30…first recess; 31…first wall; 32a…top; 32b…top; 32c…top; 32d…top; 33…ridgeline; 33a… 1st ridge; 33b…2nd ridge; 33c…3rd ridge; 33d…4th ridge; 35…2nd recess; 36…2nd wall; 41…connecting portion; 50…winding body; 51…metal plate; 51a…1st surface; 51b…2nd surface; 52…core; 53a…resist film; 53b…resist film; 53c…1st resist pattern; 53d…2nd resist pattern; 54…resin; 70…manufacturing device; 71…resist film forming device; 72…exposure / developing device; 73…etching device; 74…peeling device; 75…separating device; 90…evaporation device; 92…substrate; 94…crucible; 96…heater; 98…evaporation material.

Claims

1. A metal mask, wherein: The metal mask comprises a hole area, a surrounding area and an alignment area. The surrounding area is an area located around the porous area. The surrounding area has a non-porous surface, The alignment area is an area surrounded by the hole area. The alignment area has a non-porous surface and an alignment mark, The perforated area has a plurality of through holes and a plurality of ridges, The ridge lines divide the adjacent through holes. The through holes include a first through hole, a second through hole, a third through hole, and a fourth through hole. The ridge lines include a first ridge line, a second ridge line, and a third ridge line. The first through hole is located adjacent to a boundary between the alignment area and the perforated area. The second through hole is located adjacent to the first through hole across the first ridge line. The third through hole is located adjacent to the second through hole across the second ridge line. The fourth through hole is located adjacent to the third through hole across the third ridge line. The boundary, the centroid of the first through hole, the centroid of the second through hole, and the centroid of the third through hole are located on the straight line L1 in this order. The straight line L1 is a straight line where the distance between the center of gravity of the first through hole and the center of gravity of the fourth through hole is the shortest. In the section passing through the straight line L1, The boundary has a height H0, The first ridgeline has a height H1, The second ridgeline has a height H2, The third edge line has a height H3, The ratio of the height H0 to the height H1 (H0 / H1) is 2.10 or less, The ratio of the height H1 to the height H2 (H1 / H2) is less than 2.10, The ratio of the height H2 to the height H3 (H2 / H3) is 2.10 or less.

2. The metal mask according to claim 1, wherein: The ratio of the height H0 to the height H1 (H0 / H1) is greater than 1.20, The ratio of the height H1 to the height H2 (H1 / H2) is greater than 1.10, The ratio of the height H2 to the height H3 (H2 / H3) is greater than or equal to 1.

00.

3. The metal mask according to claim 1, wherein: The through hole has a fifth through hole, The ridgeline has a fourth ridgeline, The fifth through hole is located adjacent to the fourth through hole across the fourth ridge line. The boundary, the centroid of the first through hole, the centroid of the second through hole, the centroid of the third through hole, the centroid of the fourth through hole, and the centroid of the fifth through hole are located on the straight line L1 in this order, In the section passing through the straight line L1, The fourth edge line has a height H4, The ratio of the height H4 to the height H0 (H0 / H4) is greater than or equal to 1.

25.

4. The metal mask according to claim 1, wherein: The porous region comprises a first porous region and a second porous region, The density of the through holes in the first perforated region is higher than the density of the through holes in the second perforated region.

5. The metal mask according to claim 4, wherein: The second perforated region is located at a position dividing the adjacent first perforated region.

6. A method for manufacturing a metal mask, wherein: The method for manufacturing the metal mask comprises: a step of preparing a metal plate having a first surface and a second surface located on the opposite side of the first surface; and an etching step of forming the metal mask by etching the metal plate, The metal mask comprises a hole area, a surrounding area and an alignment area. The surrounding area is an area located around the porous area. The surrounding area has a non-porous surface, The alignment area is an area surrounded by the hole area. The alignment area has a non-porous surface and an alignment mark, The perforated area has a plurality of through holes and a plurality of ridges, The ridge lines divide the adjacent through holes. The through holes include a first through hole, a second through hole, a third through hole, and a fourth through hole. The ridge lines include a first ridge line, a second ridge line, and a third ridge line. The first through hole is located adjacent to a boundary between the alignment area and the perforated area. The second through hole is located adjacent to the first through hole across the first ridge line. The third through hole is located adjacent to the second through hole across the second ridge line. The fourth through hole is located adjacent to the third through hole across the third ridge line. The boundary, the centroid of the first through hole, the centroid of the second through hole, the centroid of the third through hole, and the centroid of the fourth through hole are located on the straight line L1 in this order, The straight line L1 is a straight line where the distance between the center of gravity of the first through hole and the center of gravity of the fourth through hole is the shortest. In the section passing through the straight line L1, The boundary has a height H0, The first ridgeline has a height H1, The second ridgeline has a height H2, The third edge line has a height H3, The ratio of the height H0 to the height H1 (H0 / H1) is 2.10 or less, The ratio of the height H1 to the height H2 (H1 / H2) is less than 2.10, The ratio of the height H2 to the height H3 (H2 / H3) is 2.10 or less.

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