Solid-state imaging device

Abstract

The solid-state imaging device includes: a first electrode provided to surround a part of an outer periphery of a first pixel and to which a fixed voltage is supplied; a charge transport layer disposed at least in a region facing the first electrode and corresponding to the first pixel, and transporting charges; a photoelectric conversion layer provided on an opposite side of the charge transport layer from the first electrode, and converting light into charges; an electrode that is provided on the opposite side of the photoelectric conversion layer from the charge transport layer, and that supplies a voltage to the photoelectric conversion layer; a first storage electrode and a second storage electrode disposed to be separated from each other on an opposite side of the charge transport layer from the photoelectric conversion layer in a region corresponding to the first pixel, and respectively storing charges in the charge transport layer; and a first control electrode disposed between the first storage electrode and the second storage electrode, and transferring one of the charges stored by the first storage electrode and the second storage electrode.

Description

Technical Field

[0001] The present invention relates to a solid-state imaging device. Background Art

[0002] Patent document 1 discloses an imaging element. In the imaging element, a phase difference detection pixel for detecting a phase difference is arranged in a part of a pixel array unit in which a plurality of pixels are arranged. The detection of the phase difference by the phase difference detection pixel enables the detection of the focal position of the subject, thereby enabling automatic focusing for automatically focusing the imaging lens.

[0003] The pixels are configured by stacking a separate on-chip lens that individually condenses incident light for each pixel on a photoelectric conversion portion that converts incident light into electric charges.

[0004] Meanwhile, a phase difference detection pixel is formed by arranging two pixels adjacent to each other. A phase difference detection pixel is formed by stacking a common on-chip lens shared by two pixels on the photoelectric conversion parts of the two pixels. In the common on-chip lens, incident light incident on one side of one pixel is focused on the photoelectric conversion part of the other pixel, and incident light incident on one side of the other pixel is focused on the photoelectric conversion part of the one pixel.

[0005] Furthermore, Patent Document 2 discloses a solid-state imaging element. In this solid-state imaging element, in the same manner as the imaging element disclosed in Patent Document 1, phase difference detection pixels are arranged in a portion of a pixel array section where a plurality of pixels are arranged.

[0006] The pixel includes a photoelectric conversion film that converts incident light into electric charges, and electrodes that sandwich the photoelectric conversion film at upper and lower sides thereof.

[0007] Meanwhile, the phase difference detection pixel is composed of two pixels whose pixel areas vary from pixel to pixel. The change of the pixel area is achieved by changing the area of ​​the electrode.

[0008] Citation list

[0009] Patent Literature

[0010] Patent Document 1: International Publication No. WO2021 / 045139

[0011] Patent Document 2: Japanese Unexamined Patent Application Publication No. 2015-50331 Summary of the invention

[0012] In the imaging element disclosed in the above-mentioned patent document 1, part of a single on-chip lens is changed to a common on-chip lens to form a phase difference detection pixel. In addition, in the solid-state imaging element disclosed in patent document 2, the pixel area of ​​some pixels is changed to form a phase difference detection pixel. That is, the phase difference detection pixel is fixedly arranged at a predetermined position of the pixel array unit.

[0013] In the solid-state imaging device, it is desirable to simply arrange phase difference detection pixels in a predetermined area or on the entire surface of a pixel region (pixel array section).

[0014] According to a first aspect of the present invention, a solid-state imaging device includes: a first electrode, which is arranged to surround a part of the periphery of a first pixel and supply a fixed voltage thereto; a charge transfer layer, which is arranged at least in a region opposite to the first electrode and corresponding to the first pixel, the charge transfer layer transfers charges; a photoelectric conversion layer, which is arranged on the side of the charge transfer layer opposite to the first electrode, the light conversion layer converts light into charges; an electrode, which is arranged on the side of the photoelectric conversion layer opposite to the charge transfer layer, the electrode supplies a voltage to the photoelectric conversion layer; a first accumulation electrode and a second accumulation electrode, which are arranged to be spaced apart from each other on the side of the charge transfer layer opposite to the photoelectric conversion layer in the region corresponding to the first pixel, the first accumulation electrode and the second accumulation electrode respectively accumulate charges in the charge transfer layer; and a first control electrode, which is arranged between the first accumulation electrode and the second accumulation electrode, the first control electrode transfers one of the charges accumulated by the first accumulation electrode and the charges accumulated by the second accumulation electrode.

[0015] In a solid-state imaging device according to a second aspect of the present invention, in the solid-state imaging device according to the first embodiment, the first accumulation electrode and the second accumulation electrode are arranged to be spaced apart from each other in a first direction. In addition, in the solid-state imaging device according to the second embodiment, a second pixel is arranged in a second direction intersecting with the first direction relative to the first pixel. The second pixel includes: a first electrode, which is arranged to surround a part of the periphery of the second pixel and supply a fixed voltage thereto; a charge transfer layer, which is arranged at least in a region opposite to the first electrode and corresponding to the second pixel, the charge transfer layer transfers charges; a photoelectric conversion layer, which is arranged on the side of the charge transfer layer opposite to the first electrode, the photoelectric conversion layer converts light into charges; an electrode, which is arranged on the side of the photoelectric conversion layer opposite to the charge transfer layer, the electrode supplies a voltage to the photoelectric conversion layer; a third accumulation electrode and a fourth accumulation electrode, which are arranged to be spaced apart from each other along the first direction on the side of the charge transfer layer opposite to the photoelectric conversion layer in the region corresponding to the second pixel, the third accumulation electrode and the fourth accumulation electrode respectively accumulate charges in the charge transfer layer; and a second control electrode, which is arranged between the third accumulation electrode and the fourth accumulation electrode, the second control electrode transfers one of the charges accumulated by the third accumulation electrode and the charges accumulated by the fourth accumulation electrode. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a schematic plan view (chip layout diagram) of a solid-state imaging device according to a first embodiment of the present invention.

[0017] Figure 2 is a schematic plan view of a plurality of pixels of the solid-state imaging device according to the first embodiment.

[0018] Figure 3 yes Figure 2 A longitudinal cross-sectional view of the solid-state imaging device and pixel shown in FIG. Figure 2 AA cutting line shown in the figure).

[0019] Figure 4 yes Figure 2 and Figure 3 Energy potential diagram of the pixel shown during non-saturated accumulation.

[0020] Figure 5 yes Figure 2 and Figure 3 The pixels shown are Figure 2 and Figure 3 Energy potential diagram at the beginning of the transmission shown.

[0021] Figure 6 yes Figure 2 and Figure 3 Energy potential diagram of the pixel during transmission is shown.

[0022] Figure 7 yes Figure 2 and Figure 3 Energy potential diagram of the pixel at the end of the transmission is shown.

[0023] Figure 8 is supplied to Figure 2 and Figure 3 An illustrative timing diagram showing the relationship between voltage and time for a pixel is shown.

[0024] Fig. 9 is an explanatory timing chart of the relationship between voltage supplied to a pixel of the solid-state imaging device according to the first modification example of the first embodiment and time.

[0025] Fig.10 is an explanatory timing chart of the relationship between voltage supplied to a pixel of the solid-state imaging device according to the second modification example of the first embodiment and time.

[0026] Fig.11 A solid-state imaging device and a pixel according to a second embodiment of the present invention are provided. Figure 3 Corresponding longitudinal section view.

[0027] Fig.12 is a solid-state imaging device according to a third embodiment of the present invention. Figure 2 Corresponding schematic plan view.

[0028] Fig.13 is a solid-state imaging device according to a fourth embodiment of the present invention. Figure 2 Corresponding schematic plan view.

[0029] Fig.14 is a solid-state imaging device according to a fifth embodiment of the present invention. Figure 2 Corresponding schematic plan view.

[0030] Fig.15 is a solid-state imaging device according to a sixth embodiment of the present invention. Figure 2 Corresponding schematic plan view.

[0031] Fig.16 is a plurality of pixels of a solid-state imaging device according to a seventh embodiment of the present invention. Figure 2 Corresponding schematic plan view.

[0032] Fig.17 yes Fig.16 The pixel shown is compared with the Figure 4 The corresponding energy potential diagram.

[0033] Fig.18 yes Fig.16 The pixel shown at the beginning of the transmission is Figure 5 The corresponding energy potential diagram.

[0034] Fig.19 yes Fig.16 The pixel shown during the transmission is Figure 6 The corresponding energy potential diagram.

[0035] Fig. 20 yes Fig.16 The pixel shown at the end of the transfer is Figure 7 The corresponding energy potential diagram.

[0036] Fig.21 is provided to Fig.16 An illustrative timing diagram showing the relationship between voltage and time for a pixel is shown.

[0037] Fig. 22 is an explanatory timing chart of the relationship between voltage supplied to a pixel of the solid-state imaging device according to the first modification example of the seventh embodiment and time.

[0038] Fig.23 is an explanatory timing chart of the relationship between the voltage supplied to the pixel of the solid-state imaging device according to the second modification of the seventh embodiment and time.

[0039] Fig.24 is a solid-state imaging device according to an eighth embodiment of the present invention. Figure 2 Corresponding schematic plan view.

[0040] Fig.25 is with Figure 2 Correspondingly, a schematic plan view of a plurality of pixels of a solid-state imaging device according to a ninth embodiment of the present invention.

[0041] Fig.26 is a solid-state imaging device according to a tenth embodiment of the present invention. Figure 2 Corresponding schematic plan view.

[0042] Fig. 27 is a solid-state imaging device according to an eleventh embodiment of the present invention. Figure 2 Corresponding schematic plan view.

[0043] Fig.28 is a solid-state imaging device according to a twelfth embodiment of the present invention. Figure 3 Corresponding longitudinal section view.

[0044] Fig.29 is a solid-state imaging device according to a thirteenth embodiment of the present invention. Figure 3 Corresponding longitudinal section view.

[0045] Fig.30 is a solid-state imaging device according to a fourteenth embodiment of the present invention. Figure 3 Corresponding longitudinal section view.

[0046] Fig.31 is a block diagram of an electronic device according to a fifteenth embodiment of the present invention.

[0047] Fig.32 is a configuration diagram of a photodetection system having a photodetector according to a sixteenth embodiment of the present invention.

[0048] Fig.33 yes Fig.32 The circuit structure diagram of the photoelectric detection system shown.

[0049] Fig.34 is a block diagram showing an example of a schematic configuration of a vehicle control system.

[0050] Fig.35 It is a diagram for assisting in explaining an example of the installation positions of the vehicle exterior information detection unit and the imaging unit.

[0051] Fig.36 is a diagram showing an example of a schematic configuration of an endoscopic surgery system.

[0052] Fig.37 is a block diagram showing an example of the functional configuration of a camera head and a camera control unit (CCU). DETAILED DESCRIPTION

[0053] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Note that the description will be given in the following order.

[0054] 1. First Implementation Method

[0055] The first embodiment explains a first example in which the present technology is applied to a solid-state imaging device. The first embodiment explains the overall configuration of the solid-state imaging device, the configuration of pixels, and the operation of pixels.

[0056] 2. Second Implementation Method

[0057] The second embodiment explains a second example in which the cross-sectional structures of the accumulation electrode and the control electrode of the pixel are changed in the solid-state imaging device according to the first embodiment.

[0058] 3. Third Implementation Plan

[0059] Third Embodiment A third example in which the configuration of the control electrode is changed in the solid-state imaging device according to the first embodiment or the second embodiment is described.

[0060] 4. Fourth Implementation Method

[0061] Fourth Embodiment A fourth example in which the configuration of the control electrode is changed in the solid-state imaging device according to the first embodiment or the second embodiment is described.

[0062] 5. Fifth Implementation Method

[0063] Fifth Embodiment A fifth example in which an electrode is further provided in the solid-state imaging device according to the first embodiment or the second embodiment is described.

[0064] 6. Sixth Implementation Method

[0065] Sixth Embodiment A sixth example in which the solid-state imaging device according to the fourth embodiment and the solid-state imaging device according to the fifth embodiment are combined is described.

[0066] 7. Seventh Implementation Plan

[0067] The seventh embodiment explains a seventh example in which a switch element is further provided in the solid-state imaging device according to the fifth embodiment.

[0068] 8. Eighth Implementation Method

[0069] The eighth embodiment explains an eighth example in which a switching element is further provided in the solid-state imaging device according to the third embodiment.

[0070] 9. Ninth Implementation Plan

[0071] The ninth embodiment explains a ninth example in which a switching element is further provided in the solid-state imaging device according to the sixth embodiment.

[0072] 10. Tenth Implementation Plan

[0073] The Tenth Embodiment describes a tenth example in which the arrangement pattern of the accumulation electrodes and the control electrodes of the pixels is changed in the solid-state imaging device according to the first embodiment or the second embodiment.

[0074] 11. Eleventh Implementation Plan

[0075] Eleventh Embodiment An eleventh example in which the solid-state imaging device according to the fourth embodiment and the solid-state imaging device according to the tenth embodiment are combined is described.

[0076] 12. Twelfth Implementation Plan

[0077] The Twelfth Embodiment describes a twelfth example in which the cross-sectional structure of a pixel is changed in the solid-state imaging device according to the first embodiment.

[0078] 13. Thirteenth Implementation Plan

[0079] Thirteenth Embodiment A thirteenth example in which the cross-sectional structure of a pixel is changed in the solid-state imaging device according to the first embodiment is described.

[0080] 14. Fourteenth Implementation Plan

[0081] Fourteenth Embodiment A fourteenth example in which the cross-sectional structure of a pixel is changed in the solid-state imaging device according to the first embodiment is described.

[0082] 15. Fifteenth Implementation Plan

[0083] The Fifteenth Embodiment describes a fifteenth example in which the present technology is applied to electronic equipment including the solid-state imaging device according to any one of the first to fourteenth embodiments.

[0084] 16. Sixteenth Implementation Plan

[0085] Sixteenth Embodiment A sixteenth example in which the present technology is applied to a photodetection system including the solid-state imaging device according to any one of the first to fourteenth embodiments is described.

[0086] 17. Application examples of mobile objects

[0087] This application example explains an example in which the present technology is applied to a vehicle control system as an example of a mobile body control system.

[0088] 18. Application examples of endoscopic surgery systems

[0089] This application example illustrates an example of applying the present technology to an endoscopic surgical system.

[0090] 19. Other Implementation Schemes

[0091] <1. First Implementation Method>

[0092] Reference Figures 1 to 10 A solid-state imaging device 1 according to a first embodiment of the present invention will be described.

[0093] Here, for convenience, the arrow X direction shown appropriately in the figure indicates a plane direction of the solid-state imaging device 1 placed on a plane. The arrow Y direction indicates another plane direction orthogonal to the arrow X direction. In addition, the arrow Z direction indicates an upward direction orthogonal to the arrow X direction and the arrow Y direction. That is, the arrow X direction, the arrow Y direction, and the arrow Z direction are completely consistent with the X-axis direction, the Y-axis direction, and the Z-axis direction of the three-dimensional coordinate system, respectively.

[0094] It should be noted that each of these directions is shown to aid in understanding the description and is not intended to limit the directions used in the present technology.

[0095] [Structure of Solid-State Imaging Device 1]

[0096] (1) Overall Configuration of Solid-State Imaging Device 1

[0097] Figure 1 An example of a schematic planar configuration of an example of a solid-state imaging device 1 according to the first embodiment is shown. Here, the solid-state imaging device 1 is a CMOS solid-state imaging device. In addition, the solid-state imaging device 1 is a photodetector that converts incident light incident from the outside into electric charge.

[0098] The solid-state imaging device 1 is mainly composed of a semiconductor substrate Sub (eg, Si substrate) and includes a pixel region (pixel array section) 100 in which a plurality of pixels 10 are two-dimensionally and regularly arranged and peripheral circuits in the semiconductor substrate Sub.

[0099] The pixel 10 includes a photoelectric conversion element (not shown) that converts incident light into electric charges and a plurality of pixel transistors. The pixel transistors are composed of so-called insulated gate field effect transistors (IGFETs).

[0100] The plurality of pixel transistors include three types of transistors, for example, a transfer transistor, a reset transistor, and an amplifier transistor. In addition, by further adding a selection transistor, the pixel transistor can be composed of four types of transistors.

[0101] The equivalent circuit of the unit pixel is similar to that of a normal pixel, so its detailed illustration and description are omitted.

[0102] In addition, the pixel 10 may have a shared pixel structure including a plurality of photoelectric conversion elements, a plurality of transfer transistors, a shared floating diffusion, and a shared pixel transistor.

[0103] The peripheral circuit includes a vertical drive circuit VD, a column signal processing circuit CS, a horizontal drive circuit HD, an output circuit Out and a control circuit CC, etc.

[0104] The control circuit CC receives an input clock and data indicating an operation mode, etc., and outputs data such as internal information about the solid-state imaging device 1. That is, the control circuit CC generates a clock signal and a control signal used as a reference for the operation of the vertical drive circuit VD, the column signal processing circuit CS, the horizontal drive circuit HD, etc. based on the vertical synchronization signal, the horizontal synchronization signal, and the main clock. In addition, these signals are input to the vertical drive circuit VD, the column signal processing circuit CS, the horizontal drive circuit HD, etc.

[0105] The vertical drive circuit VD includes, for example, a shift register. The vertical drive circuit VD selects a pixel drive wiring and supplies a pulse to the selected pixel drive wiring to drive the pixel 10. The pixel 10 is driven in a row-by-row manner. That is, the vertical drive circuit VD sequentially and selectively scans the pixels 10 of the pixel area 100 in the vertical direction row by row. The signal charge generated in response to the amount of light received in the photoelectric conversion element of each pixel 10 is supplied to the column signal processing circuit CS through the vertical signal line Lv as a pixel signal.

[0106] The column signal processing circuit CS is arranged, for example, for each column of the pixel 10. In the column signal processing circuit CS, signal processing such as noise removal is performed on the signal output from the pixels 10 of one row for each pixel column. That is, the column signal processing circuit CS performs signal processing such as CDS (correlated double sampling) for removing fixed pattern noise peculiar to the pixel 10, signal amplification, and AD conversion. A horizontal selection switch not shown is connected between the output stage of the column signal processing circuit CS and the horizontal signal line Lh.

[0107] The horizontal drive circuit HD is constituted by, for example, a shift register. The horizontal drive circuit HD sequentially outputs horizontal scanning pulses to select each column signal processing circuit CS, and outputs pixel signals from each column signal processing circuit CS to the horizontal signal line Lh.

[0108] The output circuit Out performs signal processing on the signals sequentially supplied from the respective column signal processing circuits CS through the horizontal signal line Lh, and outputs the signals. For example, in the case where only buffering is performed, in some cases, the output circuit Out may perform black level adjustment, column dispersion correction, various types of digital signal processing, etc. The input / output terminal In exchanges signals between the solid-state imaging device 1 and the outside thereof.

[0109] (2) Structure of Pixel 10

[0110] Figure 2 An example of a schematic planar configuration of the pixel 10 of the solid-state imaging device 1 is shown. Figure 3 Shows Figure 2 An example of a longitudinal cross-sectional configuration of the pixel 10 is shown. Figure 3 Shown along Figure 2 The cross section is taken along the AA cutting line shown.

[0111] like Figure 3 As shown, the pixel 10 includes an inorganic photoelectric conversion unit 12 and an organic photoelectric conversion unit 20 (see FIG. Figure 1 Sub). Figure 2 and Figure 3As shown, when viewed in the arrow Z direction (hereinafter, simply referred to as a "plan view"), the pixel 10 is formed into a rectangular shape having two sides opposite to each other in the arrow X direction and two sides opposite to each other in the arrow Y direction. In addition, the pixel 10 includes an optical lens 22 for each pixel 10.

[0112] (3) Structure of the First Electrode 14

[0113] In one pixel 10, at least a portion of the periphery is surrounded by the first electrode 14. The first electrode 14 is shared by another pixel 10 arranged adjacent to the pixel 10 in the arrow X direction and the arrow Y direction.

[0114] The first electrode 14 extends in the arrow X direction and is arranged to be spaced at certain intervals in the arrow Y direction. In addition, the first electrode 14 extends in the arrow Y direction and is arranged to be spaced at certain intervals in the arrow X direction. That is, the first electrode 14 is formed in a lattice shape in a plan view. The pixel 10 is arranged in an area defined by the first electrode 14 formed in a lattice shape. A fixed voltage is supplied to the first electrode 14.

[0115] It should be noted that here, the first electrode 14 is not provided in the region where the floating diffusion 13 is provided and which is shared by adjacent pixels 10. Figure 2 , the pixel 10 arranged on the lower side corresponds to the "first pixel" according to the present technology. Figure 2 , the pixel 10 arranged on the upper side corresponds to a “second pixel” according to the present technology.

[0116] (4) Structure of Inorganic Photoelectric Conversion Section 12

[0117] The inorganic photoelectric conversion section 12 is provided in a light incident side semiconductor layer 11 stacked on a semiconductor substrate Sub. For example, a Si single crystal layer is used as the semiconductor layer 11. The semiconductor layer 11 is a p-type semiconductor region doped with a p-type impurity as a first conductivity type.

[0118] The inorganic photoelectric conversion unit 12 is provided in the semiconductor layer 11 and is formed of an n-type semiconductor region of a second conductivity type which is a conductivity type opposite to the first conductivity type. That is, the inorganic photoelectric conversion unit 12 is composed of a pn junction diode.

[0119] (5) Structure of the Organic Photoelectric Conversion Section 20

[0120] The organic photoelectric conversion section 20 is configured by sequentially stacking an accumulation electrode 201 , a charge transport layer 202 , a photoelectric conversion layer 203 , and an electrode 204 on the semiconductor layer 11 .

[0121] (5-1) Structure of the Accumulation Electrode 201

[0122] The accumulation electrode 201 is provided in a region corresponding to the pixel 10 on the semiconductor layer 11. In other words, the accumulation electrode 201 is provided on the side of the charge transport layer 202 opposite to the photoelectric conversion layer 203 between the semiconductor layer 11 and the charge transport layer 202. The accumulation electrode 201 is provided for each pixel 10. In other words, the accumulation electrode 201 is a lower electrode of the organic photoelectric conversion unit 20.

[0123] In the first embodiment, the accumulation electrode 201 includes two separated accumulation electrodes, that is, a first accumulation electrode 2011 and a second accumulation electrode 2012. In a plan view, the first accumulation electrode 2011 is formed into a rectangle whose length in the arrow Y direction is longer than the length in the arrow X direction, although its planar shape is not particularly limited. The second accumulation electrode 2012 is arranged to be spaced apart from the first accumulation electrode 2011 in the arrow X direction. In a plan view, the second accumulation electrode 2012 is formed to be line-symmetrical with respect to the first accumulation electrode 2011 about a virtual line Lc. The virtual line Lc extends between the first accumulation electrode 2011 and the second accumulation electrode 2012 in the arrow Y direction. That is, in the same manner as the first accumulation electrode 2011, the second accumulation electrode 2012 is formed into a rectangular shape.

[0124] The accumulation electrode 201 accumulates the charges converted from light in the photoelectric conversion layer 203 in the charge transport layer 202. In addition, the first accumulation electrode 2011 and the second accumulation electrode 2012 constitute a phase difference detection pixel that detects a phase difference.

[0125] The first accumulation electrode 2011 and the second accumulation electrode 2012 are respectively formed of the same conductive layer and the same conductive material. For example, an indium oxide-zinc oxide-based oxide (IZO: Indium Zinc Oxide) or an indium tin oxide (ITO: Indium Tin Oxide) is used for each of the first accumulation electrode 2011 and the second accumulation electrode 2012. The first accumulation electrode 2011 and the second accumulation electrode 2012 are respectively formed to have a film thickness of, for example, 10 nm or more and 100 nm or less.

[0126] Here, in the layout Figure 2 In the pixel (first pixel) 10 on the lower side of the , the first accumulation electrode 2011 corresponds to the "first accumulation electrode" according to the present technology, and the second accumulation electrode 2012 corresponds to the "second accumulation electrode" according to the present technology. Figure 2 In the pixel (second pixel) 10 on the upper side, the first accumulation electrode 2011 corresponds to the “third accumulation electrode” according to the present technology, and the second accumulation electrode 2012 corresponds to the “fourth accumulation electrode” according to the present technology.

[0127] (5-2) Structure of the Charge Transport Layer 202

[0128] The charge transport layer 202 is provided on the accumulation electrode 201 via the insulator 19. Here, the charge transport layer 202 is formed on a region corresponding to a plurality of pixels 10. The charge transport layer 202 is a transparent semiconductor that transmits electromagnetic waves in the visible light region. The charge transport layer 202 accumulates charges converted from light in the photoelectric conversion layer 203.

[0129] In addition, a part of the charge transfer layer 202 is connected to the floating diffusion 13. The floating diffusion 13 is connected to a pixel circuit not shown.

[0130] As the charge transport layer 202, for example, IGZO containing indium (In), gallium (Ga), zinc (Zn), and oxygen (O) is used. In addition, as the charge transport layer 202, for example, IGSiO containing In, Ga, Si, and O, or IAZO containing In, aluminum (Al), Zn, and O can be used.

[0131] For example, the charge transport layer 202 is formed to have a film thickness of 10 nm or more and 100 nm or less.

[0132] (5-3) Structure of Photoelectric Conversion Layer 203

[0133] The photoelectric conversion layer 203 is provided on the charge transport layer 202. Here, the photoelectric conversion layer 203 is formed on a region corresponding to the plurality of pixels 10 in the same manner as the charge transport layer 202. The photoelectric conversion layer 203 converts incident light into charges.

[0134] An organic material is used as the photoelectric conversion layer 203. As the organic material, any of a p-type organic semiconductor, an n-type organic semiconductor, a stacked structure of a p-type organic semiconductor and an n-type organic semiconductor, and a mixture (bulk heterostructure) of a p-type organic semiconductor and an n-type organic semiconductor can be used.

[0135] The stacked structure includes a p-type organic semiconductor, a mixture of a p-type organic semiconductor and an n-type organic semiconductor (bulk heterostructure), and a stacked structure in which n-type organic semiconductors are stacked separately. In addition, the stacked structure includes a stacked structure in which p-type organic semiconductors and a mixture of a p-type organic semiconductor and an n-type organic semiconductor (bulk heterostructure) are stacked separately. In addition, the stacked structure includes a stacked structure in which n-type organic semiconductors and a mixture of a p-type organic semiconductor and an n-type organic semiconductor (bulk heterostructure) are stacked separately. It should be noted that the stacking order of the stacked structure can be appropriately changed.

[0136] Examples of p-type organic semiconductors may include naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, perylene derivatives, tetracene derivatives, pentacene derivatives, quinacridone derivatives, thiophene derivatives, thienothiophene derivatives, benzothiophene derivatives, benzothienobenzothiophene derivatives, triallylamine derivatives, carbazole derivatives, perylene derivatives, picene derivatives, Examples of the present invention include chrysene derivatives, fluoranthene derivatives, phthalocyanine derivatives, subphthalocyanine derivatives, subporphyrazine derivatives, metal complexes including a heterocyclic compound as a ligand, polythiophene derivatives, polybenzothiadiazole derivatives, and polyfluorene derivatives.

[0137] Examples of n-type organic semiconductors include fullerenes and fullerene derivatives (e.g., fullerenes such as C60, C70, and C74 (higher fullerenes), endohedral fullerenes, etc.) or fullerene derivatives (e.g., fullerene fluorides, PCBM fullerene compounds, fullerene polymers, etc.), organic semiconductors having HOMO and LUMO that are larger (deeper) than p-type organic semiconductors, and transparent inorganic metal oxides.

[0138] As the n-type organic semiconductor, a heterocyclic compound containing a nitrogen atom, an oxygen atom or a sulfur atom can be specifically used. Examples of heterocyclic compounds include: organic molecules containing pyridine derivatives, pyrazine derivatives, pyrimidine derivatives, triazine derivatives, quinoline derivatives, quinoxaline derivatives, isoquinoline derivatives, acridine derivatives, phenazine derivatives, phenanthroline derivatives, tetrazole derivatives, pyrazole derivatives, imidazole derivatives, thiazole derivatives, oxazole derivatives, imidazole derivatives, benzimidazole derivatives, benzotriazole derivatives, benzomethoxazole derivatives, benzomethoxazole derivatives, carbazole derivatives, benzofuran derivatives, dibenzofuran derivatives, pyrazine derivatives, polyphenylene vinylene derivatives, polybenzothiadiazole derivatives, polyfluorene derivatives, etc. as part of the molecular skeleton, organic metal complexes and subphthalocyanine derivatives.

[0139] Examples of the groups contained in the fullerene derivatives include: halogen atoms; linear, branched or cyclic alkyl groups or phenyl groups; groups including linear or condensed aromatic compounds; groups including halides; partially fluoroalkyl groups; perfluoroalkyl groups; silyl groups; silylalkoxy groups; arylsilane groups; arylsulfane groups; alkylsulfane groups; arylsulfonyl groups; alkylsulfonyl groups; arylthioether groups; alkylthioether groups; amino groups; alkylamino groups; arylamino groups; hydroxyl groups; alkoxy groups; acylamino groups; acyloxy groups; carbonyl groups; carboxyl groups; formamide groups; alkoxycarbonyl groups; acyl groups; sulfonyl groups; cyano groups; nitro groups; groups including chalcogenides; phosphine groups; phosphonic acid groups and their derivatives.

[0140] For example, the thickness of the photoelectric conversion layer 203 formed of an organic material is, but not limited to, 1×10 -8 m or more and 5×10 -7 The thickness of the photoelectric conversion layer 203 is preferably 2.5×10 -8 m or more and 3×10 -7 m or less, more preferably 2.5×10 -8 m or more and 2×10 -7 m or less, and still more preferably, 1×10 -7 m or more and 1.8×10 -7 mm or less.

[0141] It should be noted that organic semiconductors are generally classified as p-type and n-type. P-type means that holes are easily transported. N-type means that electrons are easily transported. Therefore, organic semiconductors are not limited to the interpretation of having holes or electrons as the main carriers of thermal excitation as in inorganic semiconductors.

[0142] In addition, examples of a material forming the photoelectric conversion layer 203 that photoelectrically converts light having a green wavelength include a rhodamine-based dye, a merocyanine-based dye, a quinacridone derivative, a subphthalocyanine-based dye (subphthalocyanine derivative), and the like.

[0143] Examples of a material forming the photoelectric conversion layer 203 that photoelectrically converts light having a blue wavelength include coumaric acid dyes, tris-8-hydroxyquinoline aluminum (Alq3), merocyanine-based dyes, and the like.

[0144] Examples of a material forming the photoelectric conversion layer 203 that photoelectrically converts light having a red wavelength include phthalocyanine-based dyes, subphthalocyanine-based dyes (subphthalocyanine derivatives), and the like.

[0145] An inorganic material may also be used as the photoelectric conversion layer 203. As the inorganic material, crystalline silicon, amorphous silicon, microcrystalline silicon, crystalline selenium, amorphous selenium, a chalcopyrite-based compound, or a Group III-V compound semiconductor may be used.

[0146] Examples of chalcopyrite-based compounds include CIGS (CuInGaSe), CIS (CuInSe2), CuInS2, CuAlS2, CuAlSe2, CuGaS2, CuGaSe2, AgAlS2, AgAlSe2, AgInS2, and AgInSe2.

[0147] Examples of III-V compound semiconductors include GaAs, InP, AlGaAs, InGaP, AlGaInP, and InGaAsP, and further examples thereof include CdSe, CdS, In2Se3, In2S3, Bi2Se3, Bi2S3, ZnSe, ZnS, PbSe, and PbS.

[0148] Furthermore, quantum dots including these materials can also be used for the photoelectric conversion layer 203 .

[0149] In addition, although the illustration is omitted, the photoelectric conversion layer 203 may be composed of a stacked structure of a lower semiconductor layer and an upper photoelectric conversion layer. By providing the photoelectric conversion layer 203 having the lower semiconductor layer, the photoelectric conversion layer 203 can prevent recombination during charge accumulation, thereby making it possible to improve the efficiency of charge transfer to the charge transport layer 202. In addition, the generation of dark current can be effectively suppressed.

[0150] For the upper photoelectric conversion layer, a material can be appropriately selected from various materials forming the above-mentioned photoelectric conversion layer 203 .

[0151] Meanwhile, for the lower semiconductor layer, it is preferable to use a material having a large band gap value (for example, a band gap value of 3.0 eV or more) and having higher mobility than the material forming the photoelectric conversion layer 203. Specifically, organic semiconductor materials such as the above-mentioned oxide semiconductor materials (such as IGZO, etc.), transition metal chalcogenides, silicon carbide, diamond, graphene, carbon nanotubes, condensed polycyclic hydrocarbon compounds, and condensed heterocyclic compounds can be used.

[0152] In addition, for the lower semiconductor layer, in the case where the charges to be accumulated are electrons, a material having an ionization potential higher than that of the material forming the photoelectric conversion layer 203 can be used.

[0153] Meanwhile, for the lower semiconductor layer, in the case where the charges to be accumulated are holes, a material having an electron affinity smaller than that of the material forming the photoelectric conversion layer 203 can be used.

[0154] In addition, for the material forming the lower semiconductor layer, for example, it is preferable to have a 1×10 18 cm -3 The lower semiconductor layer may have a single-layer structure or a multi-layer structure. In addition, the material forming the lower semiconductor layer may be different in the region corresponding to the accumulation electrode 201 and the region corresponding to the floating diffusion 13.

[0155] (5-4) Structure of Electrode 204

[0156] The electrode 204 is provided on the photoelectric conversion layer 203. Here, the electrode 204 is formed on a region corresponding to the plurality of pixels 10. In the same manner as the accumulation electrode 201, for example, IZO or ITO is used as the electrode 204. For example, the electrode 204 is formed to have a film thickness of 20 nm or more and 100 nm or less. In other words, the electrode 204 is an upper electrode of the organic photoelectric conversion unit 20.

[0157] (5-5) Structure of Control Electrode 16

[0158] The solid-state imaging device 1 according to the first embodiment includes two separated accumulation electrodes (i.e., a first accumulation electrode 2011 and a second accumulation electrode 2012), and further includes a control electrode 16. The control electrode 16 is provided between the first accumulation electrode 2011 and the second accumulation electrode 2012. In the same manner as each of the first accumulation electrode 2011 and the second accumulation electrode 2012, the control electrode 16 is formed in a rectangular shape in a plan view whose length in the arrow Y direction is longer than that in the arrow X direction. Here, the length of the control electrode 16 in the arrow Y direction is formed to be the same as the length of each of the first accumulation electrode 2011 and the second accumulation electrode 2012 in the arrow Y direction.

[0159] In the first embodiment, the control electrode 16 is formed in the same conductive layer as each of the first accumulation electrode 2011 and the second accumulation electrode 2012. In addition, the control electrode 16 is formed of the same conductive material as each of the first accumulation electrode 2011 and the second accumulation electrode 2012. The control electrode 16 is supplied with a varying voltage. When the varying voltage is supplied to the control electrode 16, the height of the energy potential of the charge transport layer 202 is controlled.

[0160] Such a configuration enables selective transfer of one of charges accumulated in the charge transport layer 202 through the first accumulation electrode 2011 or charges accumulated in the charge transport layer 202 through the second accumulation electrode 2012 to the other. Charges are transferred to the floating diffusion 13 provided near each of the first accumulation electrode 2011 and the second accumulation electrode 2012.

[0161] Here, in the layout Figure 2 In the pixel (first pixel) 10 on the lower side of Figure 2 In the pixel (second pixel) 10 on the upper side, the control electrode 16 corresponds to the “second control electrode” according to the present technology.

[0162] (6) Structure of Optical Lens 22

[0163] In the region corresponding to the pixel 10, the optical lens 22 is provided on the electrode 204 of the organic photoelectric conversion unit 20 via the protective film 21. The optical lens 22 is formed into a circular shape in a plan view for each pixel 10. In addition, for each pixel 10, the optical lens 22 is formed into a curved shape that is curved toward the light incident side when viewed in the arrow Y direction (hereinafter, referred to as a "side view") to converge the incident light.

[0164] That is, the optical lens 22 is a so-called on-chip lens, and is formed integrally for each pixel 10 or across a plurality of pixels 10. For example, the optical lens 22 is formed of a transparent resin material.

[0165] (7) Structure of Pixel Region 100

[0166] In the solid-state imaging device 1 according to the first embodiment, as described above, the pixel 10 includes the first accumulation electrode 2011, the second accumulation electrode 2012, and the control electrode 16, and is configured as a phase difference detection pixel. In addition, a plurality of pixels 10 are arranged in the arrow X direction as a first direction and the arrow Y direction intersecting the first direction as a second direction; the plurality of pixels 10 constitute the pixel region 100. That is, the pixel region 100 is configured by arranging the phase difference detection pixels on the entire surface.

[0167] Note that the pixel 10 as a phase difference detection pixel may be arranged in a portion of the pixel region 100. Specifically, the pixel 10 may be arranged on at least a portion of the left and right sides of the pixel region 100 in the first direction and at least a portion of the upper and lower sides in the second direction.

[0168] [Operation of the Solid-State Imaging Device 1]

[0169] Next, the charge accumulation operation and the charge transfer operation of the pixel 10 of the solid-state imaging device 1 will be described.

[0170] Figure 4 An example of the energy potential of the pixel 10 during non-saturated accumulation is shown. Figure 5 An example of the energy potential of a pixel 10 at the start of transfer is shown. Figure 6An example of the energy potential of a pixel 10 during transmission is shown. Figure 7 An example of the energy potential of a pixel 10 at the end of a transfer is shown. Figures 4 to 7 In each of the above, the horizontal axis represents the floating diffusion 13, the first accumulation electrode 2011, the control electrode 16, the second accumulation electrode 2012 and the floating diffusion 13 of the pixel 10. That is, the horizontal axis represents the area along the above Figure 2 The BB cutting line shown represents each region. The vertical axis represents the energy potential of the charge transport layer 202.

[0171] also, Figure 8 An example of an illustrative timing diagram showing the relationship between time and voltage supplied to the pixel 10. Figure 8 In FIG. 1 , the horizontal axis represents time, and the vertical axis represents the respective voltages supplied to the first electrode 14, the first accumulation electrode 2011, the second accumulation electrode 2012, and the control electrode 16. Note that reference symbol OFB represents an overflow barrier.

[0172] (1) Non-saturated accumulation operation

[0173] In a non-saturated accumulation operation, such as Figure 8 As shown, a voltage higher than the voltage supplied to the first electrode 14 is supplied to each of the first accumulation electrode 2011 and the second accumulation electrode 2012 of the pixel 10 (time T1). A fixed voltage is supplied to the first electrode 14. At this time, a voltage lower than the voltage supplied to each of the first accumulation electrode 2011 and the second accumulation electrode 2012 and higher than the voltage supplied to the first electrode 14 is supplied to the control electrode 16.

[0174] like Figure 4 As shown, in the non-saturated accumulation operation, the charge q1 is accumulated in the energy potential region generated by the first accumulation electrode 2011 and the control electrode 16 in the charge transport layer 202. In the charge transport layer 202, an overflow barrier OFB is generated between the first accumulation electrode 2011 and the floating diffusion 13. The overflow barrier OFB blocks the flow of the charge q1 to the floating diffusion 13.

[0175] Meanwhile, in the non-saturated accumulation operation, the charge q2 is accumulated in the energy potential region generated by the second accumulation electrode 2012 and the control electrode 16 in the charge transport layer 202. In the charge transport layer 202, an overflow barrier OFB is generated between the second accumulation electrode 2012 and the floating diffusion 13. Likewise, the overflow barrier OFB blocks the flow of the charge q2 to the floating diffusion 13.

[0176] Each of the charge q1 and the charge q2 is condensed by the optical lens 22 , converted from light by the photoelectric conversion layer 203 , and accumulated in the charge transport layer 202 .

[0177] It is to be noted that the height of the energy potential becomes smaller in the order of the height of the energy potential generated by the overflow barrier OFB and the control electrode 16 and the height of the energy potential generated by the first accumulation electrode 2011 and the second accumulation electrode 2012 .

[0178] (2) Transmission start operation

[0179] Here, an operation in which the charge q1 accumulated in the charge transport layer 202 by the first accumulation electrode 2011 is transferred to the floating diffusion 13 is described.

[0180] In the transfer start operation, such as Figure 8 As shown in FIG. 1 , first, a low voltage starts to be supplied to the control electrode 16 (time T2). Figure 5 As shown, this causes the height of the energy potential generated by the control electrode 16 in the charge transport layer 202 to rise.

[0181] Next, a low voltage starts to be supplied to the first accumulation electrode 2011. Figure 5 As shown, this increases the height of the energy potential generated by the first accumulation electrode 2011 in the charge transport layer 202, thereby pushing up the charge q1.

[0182] (3)Transfer operation

[0183] In the transmission operation, such as Figure 8 As shown in FIG. 1 , a low voltage is supplied to the control electrode 16 and the first accumulation electrode 2011 (time T3). The voltage supplied to the control electrode 16 is lower than the voltage supplied to the first accumulation electrode 2011. This makes the energy potential generated by the first accumulation electrode 2011 in the charge transport layer 202 higher than the overflow barrier OFB, as shown in FIG. Figure 6 In addition, the barrier of the energy potential generated in the charge transport layer 202 by the control electrode 16 becomes higher than the barrier of the energy potential generated in the charge transport layer 202 by the first accumulation electrode 2011. This causes the charge q1 to flow toward the floating diffusion 13 and be transported.

[0184] (4) Transmission end operation

[0185] In the transfer end operation, first, a high voltage is supplied to the first accumulation electrode 2011 (see Figure 8 This makes the energy potential generated by the first accumulation electrode 2011 in the charge transport layer 202 lower than the overflow barrier OFB, as shown in FIG. Figure 7 shown.

[0186] Next, a high voltage is supplied to the control electrode 16 (see Figure 8 This makes the barrier of the energy potential generated by the first accumulation electrode 2011 in the charge transport layer 202 lower, thereby returning to the above-mentioned Figure 4 The state of non-saturated accumulation operation is shown.

[0187] Note that by sequentially performing the above-described transfer start operation, transfer operation, and transfer end operation, the charge q2 accumulated in the region of the energy potential generated in the charge transfer layer 202 by the second accumulation electrode 2012 is similarly transferred to the floating diffusion 13 .

[0188] [Function and Effect]

[0189] like Figure 2 and Figure 3 As shown, the solid-state imaging device 1 according to the first embodiment includes a first electrode 14 , a charge transport layer 202 , a photoelectric conversion layer 203 , an electrode 204 , a first accumulation electrode 2011 , a second accumulation electrode 2012 , and a control electrode 16 .

[0190] The first electrode 14 is provided to surround a portion of the periphery of the pixel (here, the first pixel) 10. The first electrode 14 is supplied with a fixed voltage. The charge transport layer 202 is provided at least in a region opposite to the first electrode 14 and corresponding to the pixel 10. The charge transport layer 202 transports charges. The photoelectric conversion layer 203 is provided on the side of the charge transport layer 202 opposite to the first electrode 14. The photoelectric conversion layer 203 converts light into charges. The electrode 204 is provided on the side of the photoelectric conversion layer 202 opposite to the charge transport layer 202. The electrode 204 supplies a voltage to the photoelectric conversion layer 203.

[0191] Here, the first accumulation electrode 2011 and the second accumulation electrode 2012 are provided to be spaced apart from each other on the opposite side of the charge transport layer 202 from the photoelectric conversion layer 203 in the region corresponding to the pixel 10. The first accumulation electrode 2011 and the second accumulation electrode 2012 accumulate the charge q1 and the charge q2 in the charge transport layer 202, respectively.

[0192] In addition, the control electrode (here, the first control electrode) 16 is provided between the first accumulation electrode 2011 and the second accumulation electrode 2012. Figures 4 to 8 As shown, the control electrode 16 transfers one of the charge q1 or the charge q2 accumulated by the first accumulation electrode 2011 and the second accumulation electrode 2012 .

[0193] This enables the pixel 10 to transfer one of the charge q1 accumulated in the charge transfer layer 202 by the first accumulation electrode 2011 or the charge q2 accumulated in the charge transfer layer 202 by the second accumulation electrode 2012, and to be configured as a phase difference detection pixel that detects a phase difference. The pixels 10 arranged on the entire surface of the pixel region 100 enable the phase difference detection pixel to be configured on the entire surface of the pixel region.

[0194] In addition, in the solid-state imaging device 1, there is no need to change the shape of the optical lens 22 in order to arrange the phase difference detection pixels. In addition, in the solid-state imaging device 1, there is no need to change the size of the pixel 10 in order to arrange the phase difference detection pixels. In addition, in the solid-state imaging device 1, there is no need to specially form a light blocking region in order to arrange the phase difference detection pixels.

[0195] In addition, in the solid-state imaging device 1, as Figure 2 and Figure 3 As shown, the first accumulation electrode 2011 and the second accumulation electrode 2012 are spaced apart from each other in the first direction.

[0196] In addition, in the solid-state imaging device, the pixel (here, the second pixel) 10 is arranged in a second direction intersecting the first direction relative to the pixel (first pixel) 10. In the same manner as the pixel 10 as the first pixel, the pixel 10 as the second pixel includes the first electrode 14, the charge transfer layer 202, the electrode 204, the first accumulation electrode 2011, the second accumulation electrode 2012, and the control electrode 16.

[0197] Here, in the pixel 10 as the second pixel, the first accumulation electrode 2011 corresponds to the “third accumulation electrode” according to the present technology, and the second accumulation electrode 2012 corresponds to the “fourth accumulation electrode” according to the present technology. In addition, the control electrode 16 corresponds to the “second control electrode” according to the present technology.

[0198] This enables the pixels 10 as phase difference detection pixels to be simply arranged in the second direction, thereby constituting the pixel region 100. Therefore, the phase difference detection pixels can be simply configured over the entire surface of the pixel region 100.

[0199] Note that in the present technology, in the solid-state imaging device 1 according to the first embodiment and in the modified examples and other embodiments to be described later, the “arrow X direction” can be read as the “second direction” and the “arrow Y direction” can be read as the “first direction”.

[0200] In addition, in the solid-state imaging device 1, as Figures 4 to 8 As shown in FIG. 1 , a varying voltage is supplied to the control electrode 16. Figure 5 , Figure 6 and Figure 8 As shown, in the transfer start operation to the transfer operation of the pixel 10, the supply of the voltage to the control electrode 16 starts before the supply of the voltage to the first accumulation electrode 2011.

[0201] When the voltage is first supplied to the control electrode 16, the height of the energy potential generated in the charge transport layer 202 becomes higher. Therefore, for example, the flow of the charge q1 accumulated in the charge transport layer 202 by the first accumulation electrode 2011 to the charge q2 accumulated in the charge transport layer 202 by the second accumulation electrode 2012 can be effectively suppressed or prevented. That is, blooming can be effectively suppressed or prevented.

[0202] In addition, in the solid-state imaging device 1, the control electrode 16 of the pixel 10 is provided in the same conductive layer as the first accumulation electrode 2011 and the second accumulation electrode 2012. That is, the distance between the control electrode 16 and the charge transfer layer 202 is close in such a manner that the distance between the charge transfer layer 202 and each of the first accumulation electrode 2011 and the second accumulation electrode 2012 is the same.

[0203] Therefore, the high controllability of the energy potential generated in the charge transport layer 202 can be improved by the electric field effect from the control electrode 16 .

[0204] [First Modification]

[0205] Reference Fig. 9 , a solid-state imaging device 1 according to a first modification example of the first embodiment will be described.

[0206] Note that in the first modification, subsequent modifications, and embodiments after the first embodiment, components identical or substantially identical to those of the solid-state imaging device 1 and pixel 10 according to the first embodiment are denoted by the same reference numerals, and redundant description is omitted.

[0207] [Operation of the Solid-State Imaging Device 1]

[0208] Fig. 9 An example of an illustrative timing diagram showing the relationship between time and voltage supplied to the pixel 10. Fig. 9 In FIG. 1 , the horizontal axis represents time, and the vertical axis represents the voltages supplied to the first electrode 14 , the first accumulation electrode 2011 , the second accumulation electrode 2012 , and the control electrode 16 .

[0209] like Fig. 9 As shown, in the solid-state imaging device 1 according to the first modification, the transfer start operation and the transfer operation are substantially performed at the same time, in contrast to the transfer start operation and the transfer operation of the solid-state imaging device 1 according to the first embodiment described above.

[0210] To explain this in more detail, in the transfer start operation, the supply of a low voltage to the control electrode 16 of the pixel 10 starts (time T2). Immediately after the transfer start operation and substantially simultaneously, the transfer operation is performed and the supply of a low voltage to the first accumulation electrode 2011 of the pixel 10 starts (time T3).

[0211] In the first modification example, the supply rate of the voltage to the first accumulation electrode 2011 is set to be slower than the supply rate of the voltage to the control electrode 16 .

[0212] Components other than the above-described components of the first modification are the same or substantially the same as those of the solid-state imaging device 1 and the pixel 10 according to the first embodiment.

[0213] [Function and Effect]

[0214] In the solid-state imaging device 1 according to the first modification, operations and effects similar to those obtained by the solid-state imaging device 1 according to the first embodiment can be obtained.

[0215] In addition, if Fig. 9 As shown, in the solid-state imaging device 1, the transfer start operation and the transfer operation are substantially performed simultaneously. Therefore, in the solid-state imaging device 1, the transfer speed of the charge q1 accumulated in the charge transfer layer 202 via the first accumulation electrode 2011 can be increased.

[0216] Furthermore, in the solid-state imaging device 1, as Fig. 9 As shown, in the transfer operation, the supply rate of the voltage to the first accumulation electrode 2011 is slower than the supply rate of the voltage to the control electrode 16. That is, in the charge transfer layer 202, the potential barrier of the energy potential generated by the control electrode 16 first becomes higher than the potential barrier of the energy potential generated by the first accumulation electrode 2011 (refer to Figure 6 ).

[0217] Therefore, for example, the flow of the charge q1 accumulated in the charge transport layer 202 by the first accumulation electrode 2011 to the charge q2 to be accumulated in the charge transport layer 202 by the second accumulation electrode 2012 can be effectively suppressed or prevented. That is, blooming can be effectively suppressed or prevented.

[0218] [Second Modification]

[0219] Reference Fig.10 , a solid-state imaging device 1 according to a second modification example of the first embodiment will be described.

[0220] [Operation of the Solid-State Imaging Device 1]

[0221] Fig.10An example of an illustrative timing diagram showing the relationship between time and voltage supplied to the pixel 10. Fig.10 In FIG. 1 , the horizontal axis represents time, and the vertical axis represents the voltages supplied to the first electrode 14 , the first accumulation electrode 2011 , the second accumulation electrode 2012 , and the control electrode 16 .

[0222] like Fig.10 As shown, in the solid-state imaging device 1 according to the second modification, the transfer start operation and the transfer operation are changed, as opposed to those of the solid-state imaging device 1 according to the first embodiment described above.

[0223] To explain this in more detail, during the period from the non-saturated accumulation operation to the transfer end operation, a fixed low voltage is constantly supplied to the control electrode 16 of the pixel 10. The voltage supplied to the control electrode 16 is always higher than the voltage supplied to the first electrode 14, and is always lower than the respective voltages supplied to the first accumulation electrode 2011 and the second accumulation electrode 2012.

[0224] In the transfer start operation, a low voltage is started to be supplied to the first accumulation electrode 2011 of the pixel 10 (time T2). After the transfer start operation, the transfer operation is started (time T3). When the barrier of the energy potential generated by the first accumulation electrode 2011 in the charge transfer layer 202 becomes high, the charge q1 is transferred to the floating diffusion 13 outside the overflow barrier OFB.

[0225] Components other than the above-described components of the second modification are the same or substantially the same as those of the solid-state imaging device 1 and the pixel 10 according to the first embodiment.

[0226] [Function and Effect]

[0227] In the solid-state imaging device 1 according to the second modification, operations and effects similar to those obtained by the solid-state imaging device 1 according to the first embodiment can be obtained.

[0228] In addition, in the solid-state imaging device 1, as Fig.10 As shown, in the period from the non-saturated accumulation operation to the transfer end operation, a fixed low voltage is constantly supplied to the control electrode 16 of the pixel 10. For example, when a low voltage is supplied to the first accumulation electrode 2011, a transfer start operation is performed. That is, the transfer start operation and the transfer operation are performed when a voltage is supplied to the first accumulation electrode 2011, so that in the solid-state imaging device 1, the transfer speed of the charge q1 accumulated in the charge transfer layer 202 by the first accumulation electrode 2011 can be accelerated.

[0229] Furthermore, in the solid-state imaging device 1, as Fig.10As shown, in the period from the non-saturated accumulation operation to the transfer end operation, a low voltage is constantly supplied to the control electrode 16. That is, the control electrode 16 makes the energy potential barrier in the charge transfer layer 202 always high. (Refer to Figure 6 ).

[0230] Therefore, for example, the flow of the charge q1 accumulated in the charge transport layer 202 by the first accumulation electrode 2011 to the charge q2 to be accumulated in the charge transport layer 202 by the second accumulation electrode 2012 can be effectively suppressed or prevented. That is, blooming can be effectively suppressed or prevented.

[0231] <2. Second Implementation Method>

[0232] Reference Fig.11 , a solid-state imaging device 1 according to a second embodiment of the present invention will be described.

[0233] Fig.11 An example of a longitudinal cross-sectional configuration of the pixel 10 of the solid-state imaging device 1 is shown.

[0234] like Fig.11 As shown, in the solid-state imaging device 1 according to the second embodiment, the control electrode 16 of the pixel 10 is provided in a conductive layer different from the first accumulation electrode 2011 and the second accumulation electrode 2012. Here, the control electrode 16 is provided on the side closer to the semiconductor substrate Sub than the first accumulation electrode 2011 and the second accumulation electrode 2012.

[0235] In addition, in the second embodiment, a portion of each of the first accumulation electrode 2011 and the second accumulation electrode 2012 is configured to extend on the control electrode 16 side and overlap with the control electrode 16 in a side view.

[0236] Components other than the above-described components of the second embodiment are the same or substantially the same as those of the solid-state imaging device 1 and the pixel 10 according to the first embodiment.

[0237] [Function and Effect]

[0238] In the solid-state imaging device 1 according to the second embodiment, operations and effects similar to those obtained by the solid-state imaging device 1 according to the first embodiment can be obtained.

[0239] In addition, if Fig.11As shown, in the solid-state imaging device 1 according to the second embodiment, the control electrode 16 of the pixel 10 is configured to be provided in a conductive layer different from the first accumulation electrode 2011 and the second accumulation electrode 2012, and to overlap each of the first accumulation electrode 2011 and the second accumulation electrode 2012. Therefore, the area of ​​each of the first accumulation electrode 2011 and the second accumulation electrode 2012 can be increased, so that the amount of charge accumulated in the charge transport layer 202 can be increased.

[0240] <3. Third Implementation Plan>

[0241] Reference Fig.12 , a solid-state imaging device 1 according to a third embodiment of the present invention will be described.

[0242] Fig.12 An example of a schematic planar configuration of the pixel 10 of the solid-state imaging device 1 is shown.

[0243] like Fig.12 As shown, in the solid-state imaging device 1 according to the third embodiment, the control electrode 16 of the pixel 10 is provided in the same conductive layer as the first electrode 14 , the first accumulation electrode 2011 , and the second accumulation electrode 2012 , and is also electrically connected to the first electrode 14 .

[0244] Here, the control electrode 16 is formed integrally with the first electrode 14, and is supplied with the same fixed potential as the first electrode 14. That is, in the same manner as the solid-state imaging device 1 according to the second modification of the first embodiment described above, the potential barrier of the energy potential generated in the charge transfer layer 202 by the control electrode 16 is constantly maintained in a high state.

[0245] Components other than the above-described components of the third embodiment are the same or substantially the same as those of the solid-state imaging device 1 and the pixel 10 according to the first embodiment.

[0246] [Function and Effect]

[0247] In the solid-state imaging device 1 according to the third embodiment, it is possible to obtain operations and effects similar to those obtained by the solid-state imaging device 1 according to the first embodiment.

[0248] In addition, in the solid-state imaging device 1 according to the third embodiment, as Fig.12 As shown, the control electrode 16 is configured to be electrically connected to the first electrode 14, thereby making it possible to obtain actions and effects similar to those obtained by the solid-state imaging device 1 according to the second modification example of the first embodiment.

[0249] In addition, in the solid-state imaging device 1, since a fixed voltage is supplied from the first electrode 14 to the control electrode 16, it is not necessary to construct a voltage supply path using a separate wiring. Therefore, the structure of the solid-state imaging device can be simply realized.

[0250] <4. Fourth Implementation Plan>

[0251] Reference Fig.13 , a solid-state imaging device 1 according to a fourth embodiment of the present invention will be described.

[0252] Fig.13 An example of a schematic planar configuration of the pixel 10 of the solid-state imaging device 1 is shown.

[0253] like Fig.13 As shown, the solid-state imaging device 1 according to the fourth embodiment is a modification of the solid-state imaging device 1 according to the first embodiment or the second embodiment.

[0254] To explain this in more detail, in the solid-state imaging device 1, the control electrode (first control electrode) 16 of the pixel (first pixel) 10 extends in the direction of arrow Y. The extended control electrode (first control electrode) 16 is formed integrally with the control electrode (second control electrode) 16 of another pixel (second pixel) 10 adjacent to the pixel (first pixel) 10 in the direction of arrow Y. An equal voltage is supplied to the two integrally formed control electrodes 16.

[0255] In addition, in the solid-state imaging device 1 according to the first embodiment, the control electrode 16 is formed of the same conductive layer as the first electrode 14. Therefore, a portion (the middle portion in the direction of arrow X) of the first electrode 14 of the adjacent pixel 10 is removed, and the control electrode 16 extends to and is disposed in the removed region.

[0256] Meanwhile, in the solid-state imaging device 1 according to the second embodiment, the control electrode 16 is formed of a conductive layer different from the first electrode 14. Therefore, the control electrode 16 can extend in the arrow Y direction to intersect the first electrode 14 extending in the arrow X direction.

[0257] Components other than the above-described components of the fourth embodiment are the same or substantially the same as those of the solid-state imaging device 1 and the pixel 10 according to the first embodiment or the second embodiment.

[0258] [Function and Effect]

[0259] In the solid-state imaging device 1 according to the fourth embodiment, it is possible to obtain operations and effects similar to those obtained by the solid-state imaging device 1 according to the first embodiment or the second embodiment.

[0260] In addition, in the solid-state imaging device 1 according to the third embodiment, as Fig.12 As shown, the control electrodes 16 of the adjacent pixels 10 are connected together as a whole. In other words, the control electrodes 16 are electrically connected to each other.

[0261] Therefore, the number of connections between the control electrode 16 and the wiring (not shown) for supplying a voltage thereto can be reduced, and thus a simple structure can be achieved.

[0262] <5. Fifth Implementation Plan>

[0263] Reference Fig.14 , a solid-state imaging device 1 according to a fifth embodiment of the present invention will be described.

[0264] Fig.14 An example of a schematic planar configuration of the pixel 10 of the solid-state imaging device 1 is shown.

[0265] like Fig.14 As shown, the solid-state imaging device 1 according to the fifth embodiment is an example in which the solid-state imaging device 1 according to the first embodiment or the second embodiment and the solid-state imaging device 1 according to the third embodiment are combined.

[0266] To explain this in more detail, the solid-state imaging device 1 includes a second electrode 17 located between the first accumulation electrode 2011 and the second accumulation electrode of the pixel 10 and between the control electrode 16 and the floating diffusion 13. The second electrode 17 is formed in the same conductive layer as each of the first accumulation electrode 2011 and the second accumulation electrode 2012, and is formed of the same conductive material as each of them.

[0267] The fixed voltage supplied to the second electrode 17 is, for example, a low voltage that is equal to or close to the fixed voltage supplied to the first electrode 14 .

[0268] Components other than the above-described components of the fifth embodiment are the same or substantially the same as those of the solid-state imaging device 1 and the pixel 10 according to any one of the first to third embodiments.

[0269] [Function and Effect]

[0270] In the solid-state imaging device 1 according to the fifth embodiment, it is possible to obtain operations and effects similar to those obtained by the solid-state imaging device 1 according to the first embodiment or the second embodiment.

[0271] In addition, if Fig.14As shown, the solid-state imaging device 1 includes a second electrode 17 between the first accumulation electrode 2011 and the second accumulation electrode 2012 and between the control electrode 16 and the floating diffusion 13. The second electrode 17 is supplied with a fixed voltage, for example, the fixed voltage is equal to the fixed voltage supplied to the first electrode 14, so that the potential barrier of the energy potential generated in the charge transfer layer 202 can always be high. The potential barrier of the energy potential is formed as a guide wall that guides the charge q1 (refer to Figure 6 ) is guided to the floating diffusion 13. Similarly, the energy potential barrier is formed as a guide wall that guides the charge q2 (refer to Figure 6 ) is guided to the floating diffusion 13.

[0272] Therefore, for example, the flow of the charge q1 accumulated in the charge transport layer 202 by the first accumulation electrode 2011 toward the charge q2 accumulated in the charge transport layer 202 by the second accumulation electrode 2012 can be effectively suppressed or prevented. That is, blooming can be effectively suppressed or prevented.

[0273] <6. Sixth Implementation Plan>

[0274] Reference Fig.15 , a solid-state imaging device 1 according to a sixth embodiment of the present invention will be described.

[0275] Fig.15 An example of a schematic planar configuration of the pixel 10 of the solid-state imaging device 1 is shown.

[0276] like Fig.15 As shown, the solid-state imaging device 1 according to the sixth embodiment is an example in which the solid-state imaging device 1 according to the fourth embodiment and the solid-state imaging device 1 according to the fifth embodiment are combined.

[0277] To explain this in more detail, in the solid-state imaging device 1 , the control electrodes 16 of the pixels 10 adjacent to each other in the arrow Y direction are integrally formed, and the second electrode 17 is provided between the control electrode 16 and the floating diffusion 13 .

[0278] Components other than the above-described components of the sixth embodiment are the same or substantially the same as those of the solid-state imaging device 1 and the pixel 10 according to the fourth embodiment or the fifth embodiment.

[0279] [Function and Effect]

[0280] In the solid-state imaging device 1 according to the sixth embodiment, it is possible to obtain the combined effects of the effects obtained by the solid-state imaging device 1 according to the fourth embodiment and the effects obtained by the solid-state imaging device 1 according to the fifth embodiment.

[0281] <7. Seventh Implementation Plan>

[0282] Reference Fig.16 , a solid-state imaging device 1 according to a seventh embodiment of the present invention is described.

[0283] Fig.16 An example of a schematic planar configuration of the pixel 10 of the solid-state imaging device 1 is shown.

[0284] [Structure of Solid-State Imaging Device 1]

[0285] like Fig.16 As shown, the solid-state imaging device 1 according to the seventh embodiment is an application example of the solid-state imaging device 1 according to the fifth embodiment.

[0286] To explain this in more detail, in the solid-state imaging device 1, the switch element 18 is provided between the first accumulation electrode 2011 and the floating diffusion 13 of the pixel 10 and between the second accumulation electrode 2012 and the floating diffusion 13. Here, the switch element 18 is composed of an IGFET.

[0287] In one switching element 18, the charge transport layer 202 in the region corresponding to the first accumulation electrode 2011 is configured as one main electrode, and the charge transport layer 202 in the region corresponding to the floating diffusion 13 is configured as the other main electrode. In addition, in the switching element 18, a gate electrode 18G is provided via a gate insulating film in the region corresponding to the charge transport layer 202 between the main electrodes. The gate insulating film is formed of an insulator 19. The gate electrode 18G is formed, for example, in the same conductive layer as the first accumulation electrode 2011 and is formed of the same conductive material.

[0288] In another switching element 18, the charge transport layer 202 in the region corresponding to the second accumulation electrode 2012 is configured as one main electrode, and the charge transport layer 202 in the region corresponding to the floating diffusion 13 is configured as another main electrode. Likewise, the switching element 18 includes a gate insulating film and a gate electrode 18G.

[0289] In one switching element 18, when a voltage is supplied to the gate electrode 18G, the charge q1 accumulated in the charge transfer layer 202 by the first accumulation electrode 2011 is transferred to the floating diffusion 13. Similarly, in the other switching element 18, when a voltage is supplied to the gate electrode 18G, the charge q2 accumulated in the charge transfer layer 202 by the second accumulation electrode 2012 is transferred to the floating diffusion 13.

[0290] Components other than the above-described components of the seventh embodiment are the same or substantially the same as those of the solid-state imaging device 1 and the pixel 10 according to the fifth embodiment.

[0291] [Operation of the Solid-State Imaging Device 1]

[0292] Next, the charge accumulation operation and the charge transfer operation of the pixel 10 in the above-described solid-state imaging device 1 will be described.

[0293] Fig.17 An example of the energy potential of the pixel 10 during non-saturated accumulation is shown. Fig.18 An example of the energy potential of a pixel 10 during the start of a transfer is shown. Fig.19 An example of the energy potential of a pixel 10 during transmission is shown. Fig. 20 An example of the energy potential of a pixel 10 at the end of a transfer is shown. Figures 17 to 20 , the horizontal axis shows the respective regions of the floating diffusion 13, the switching element 18, the first accumulation electrode 2011, the control electrode 16, the second accumulation electrode 2012, the switching element 18, and the floating diffusion 13 of the pixel 10. That is, the horizontal axis corresponds to the region along the above Fig.16 The CC cutting line shown represents each region. The vertical axis represents the energy potential of the charge transport layer 202.

[0294] also, Fig.21 An example of an illustrative timing diagram showing the relationship between time and voltage supplied to the pixel 10. Fig.21 In FIG. 1 , the horizontal axis represents time, and the vertical axis represents voltages supplied to the first electrode 14 , the first accumulation electrode 2011 , the second accumulation electrode 2012 , the control electrode 16 , and the switching element 18 .

[0295] (1) Non-saturated accumulation operation

[0296] In a non-saturated accumulation operation, such as Fig.21As shown, a voltage higher than the voltage supplied to the first electrode 14 is supplied to each of the first accumulation electrode 2011 and the second accumulation electrode 2012 of the pixel 10 (time T1). In the period from the non-saturated accumulation operation to the transfer end operation, a fixed voltage is supplied to each of the first accumulation electrode 2011 and the second accumulation electrode 2012. At the same time, a fixed voltage is also supplied to the first electrode 14. At this time, a voltage lower than the voltage supplied to each of the first accumulation electrode 2011 and the second accumulation electrode 2012 and higher than the voltage supplied to the first electrode 14 is supplied to the control electrode 16. In addition, a low voltage is supplied to the gate electrode 18G of the switching element 18 to make it enter the cut-off state. A voltage lower than the voltage supplied to the control electrode 16 and higher than the voltage supplied to the first electrode 14 is supplied to the gate electrode 18G.

[0297] like Fig.17 As shown, in the non-saturated accumulation operation, the charge q1 is accumulated in the energy potential region generated by the first accumulation electrode 2011, the control electrode 16 and the switching element 18 in the charge transfer layer 202. The switching element 18 enters the cut-off state, so the charge q1 accumulated in the charge transfer layer 202 by the first accumulation electrode 2011 is not transferred to the floating diffusion 13.

[0298] Meanwhile, in the non-saturated accumulation operation, the charge q2 is accumulated in the energy potential region generated in the charge transfer layer 202 by the second accumulation electrode 2012, the control electrode 16, and the switching element 18. The switching element 18 enters the cut-off state, so the charge q2 accumulated in the charge transfer layer 202 by the second accumulation electrode 2012 is not transferred to the floating diffusion 13.

[0299] Each of the charge q1 and the charge q2 is condensed by the optical lens 22 , converted from light by the photoelectric conversion layer 203 , and accumulated in the charge transport layer 202 .

[0300] Note that the height of the energy potential becomes smaller in the order of the height of the energy potential generated by the switching element 18 , the height of the energy potential generated by the control electrode 16 , and the height of the energy potential generated by the first accumulation electrode 2011 and the second accumulation electrode 2012 .

[0301] (2) Transmission start operation

[0302] Here, an operation in which the charge q1 accumulated in the charge transport layer 202 by the first accumulation electrode 2011 is transferred to the floating diffusion 13 is described.

[0303] In the transfer start operation, such as Fig.21 As shown in FIG. 1 , first, a low voltage starts to be supplied to the control electrode 16 (time T2). Fig.18As shown, this increases the height of the energy potential generated by the control electrode 16 in the charge transport layer 202.

[0304] (3)Transfer operation

[0305] In the transmission operation, such as Fig.21 As shown, a high voltage is supplied to the gate electrode 18G of the switch element 18 disposed between the first accumulation electrode 2011 and the floating diffusion 13, thereby turning the switch element 18 into an on state (time T3). Fig.19 As shown, this reduces the potential barrier between the energy potential generated in the charge transfer layer 202 by the first accumulation electrode 2011 and the energy potential generated in the charge transfer layer 202 by the floating diffusion 13. That is, the charge q1 accumulated in the charge transfer layer 202 by the first accumulation electrode 2011 flows to the floating diffusion 13 through the switching element 18 and is transferred.

[0306] (4) Transmission end operation

[0307] In the transfer end operation, a low voltage is supplied to the gate electrode 18G of the switch element 18 to turn the switch element 18 into an off state (see Fig.17 This increases the barrier of the energy potential generated in the charge transport layer 202 in the region corresponding to the switching element 18, thereby returning to the state of the non-saturated accumulation operation.

[0308] Note that the above-described transfer start operation, transfer operation, and transfer end operation are performed sequentially so that the charge q2 accumulated in the region of the energy potential generated in the charge transfer layer 202 by the second accumulation electrode 2012 can be transferred to the floating diffusion 13 in the same manner.

[0309] Components other than the above-described components of the seventh embodiment are the same or substantially the same as those of the solid-state imaging device 1 and the pixel 10 according to the fifth embodiment.

[0310] [Function and Effect]

[0311] In the solid-state imaging device 1 according to the seventh embodiment, operations and effects similar to those obtained by the solid-state imaging device 1 according to the fifth embodiment can be obtained.

[0312] In addition, if Fig.16 As shown, in the solid-state imaging device 1 , the respective switching elements 18 are arranged between the first accumulation electrode 2011 and the floating diffusion 13 of the pixel 10 and between the second accumulation electrode 2012 and the floating diffusion 13 .

[0313] Here, the first accumulation electrode 2011 and the second accumulation electrode 2012 are provided to be spaced apart from each other on the opposite side of the charge transport layer 202 from the photoelectric conversion layer 203 in the region corresponding to the pixel 10. The first accumulation electrode 2011 and the second accumulation electrode 2012 accumulate charges q1 and q2 in the charge transport layer 202, respectively.

[0314] In addition, the control electrode 16 is provided between the first accumulation electrode 2011 and the second accumulation electrode 2012. Figures 17 to 21 As shown, the switch element 18 and the control electrode 16 transfer one of the charge q1 or the charge q2 accumulated by the first accumulation electrode 2011 and the second accumulation electrode 2012 .

[0315] This enables the pixel 10 to transfer one of the charge q1 accumulated in the charge transfer layer 202 by the first accumulation electrode 2011 or the charge q2 accumulated in the charge transfer layer 202 by the second accumulation electrode 2012, and to be configured as a phase difference detection pixel that detects a phase difference. The pixels 10 arranged on the entire surface of the pixel region 100 enable the phase difference detection pixel to be configured on the entire surface of the pixel region 100.

[0316] In addition, in the solid-state imaging device 1, there is no need to change the shape of the optical lens 22 in order to arrange the phase difference detection pixels. In addition, in the solid-state imaging device 1, there is no need to change the size of the pixel 10 in order to arrange the phase difference detection pixels. In addition, in the solid-state imaging device 1, there is no need to specially form a light shielding region in order to arrange the phase difference detection pixels.

[0317] Furthermore, in the solid-state imaging device 1, as Fig.17 , Fig.18 and Fig.21 As shown, in the transfer start operation to the transfer operation of the pixel 10, a voltage is supplied to the control electrode 16. Then, in the transfer operation, the switching element 18 enters the on state. When the voltage is first supplied to the control electrode 16, the height of the energy potential generated in the charge transfer layer 202 becomes higher.

[0318] Therefore, for example, the charge q1 accumulated in the charge transport layer 202 by the first accumulation electrode 2011 can be effectively suppressed or prevented from flowing toward the charge q2 to be accumulated in the charge transport layer 202 by the second accumulation electrode 2012. That is, blooming can be effectively suppressed or prevented.

[0319] [First Modification]

[0320] Reference Fig. 22 , a solid-state imaging device 1 according to a first modification example of the seventh embodiment is described.

[0321] [Operation of the Solid-State Imaging Device 1]

[0322] Fig. 22 An example of an illustrative timing diagram showing the relationship between time and voltage supplied to the pixel 10. Fig. 22 In FIG. 1 , the horizontal axis represents time, and the vertical axis represents voltages supplied to the first electrode 14 , the first accumulation electrode 2011 , the second accumulation electrode 2012 , the control electrode 16 , and the switching element 18 .

[0323] In contrast to the transfer start operation and the transfer operation of the solid-state imaging device 1 according to the seventh embodiment, Fig. 22 As shown, in the solid-state imaging device 1 according to the first modification, the transfer start operation and the transfer operation are performed substantially simultaneously.

[0324] To explain this in more detail, in the transfer start operation, a low voltage is started to be supplied to the control electrode 16 of the pixel 10 (time T2). Immediately after the transfer start operation and substantially simultaneously, the transfer operation is performed, and a high voltage is started to be supplied to the gate electrode 18G of the switching element 18 of the pixel 10 (time T3). The supply rate of the voltage to the switching element 18 is set to be slower than the supply rate of the voltage to the control electrode 16.

[0325] Components other than the above-described components of the first modification example are the same or substantially the same as those of the solid-state imaging device 1 and the pixel 10 according to the seventh embodiment.

[0326] [Function and Effect]

[0327] In the solid-state imaging device 1 according to the first modification, operations and effects similar to those obtained by the solid-state imaging device 1 according to the seventh embodiment can be obtained.

[0328] In addition, if Fig. 22 As shown, in the solid-state imaging device 1, the transfer start operation and the transfer operation are substantially performed simultaneously. Therefore, in the solid-state imaging device 1, the transfer speed of the charge q1 accumulated in the charge transfer layer 202 by the first accumulation electrode 2011 can be increased.

[0329] Furthermore, in the solid-state imaging device 1, in the transfer operation, as shown in FIG. Fig. 22 As shown, the voltage supply rate to the switch element 18 is slower than the voltage supply rate to the control electrode 16. That is, in the charge transfer layer 202, the potential barrier of the energy potential generated by the control electrode 16 becomes high first, and then the switch element 18 enters the on state to transfer the charge q1 (refer to Fig.19 ).

[0330] Therefore, for example, the flow of the charge q1 accumulated in the charge transport layer 202 by the first accumulation electrode 2011 toward the charge q2 to be accumulated in the charge transport layer 202 by the second accumulation electrode 2012 can be effectively suppressed or prevented. That is, blooming can be effectively suppressed or prevented.

[0331] [Second Modification]

[0332] Reference Fig.23 , a solid-state imaging device 1 according to a second modification example of the seventh embodiment will be described.

[0333] [Operation of the Solid-State Imaging Device 1]

[0334] Fig.23 An example of an illustrative timing diagram showing the relationship between time and voltage supplied to the pixel 10. Fig.23 In FIG. 1 , the horizontal axis represents time, and the vertical axis represents voltages supplied to the first electrode 14 , the first accumulation electrode 2011 , the second accumulation electrode 2012 , the control electrode 16 , and the switching element 18 .

[0335] In contrast to the transfer start operation and the transfer operation of the solid-state imaging device 1 according to the seventh embodiment described above, Fig.23 As shown, the transfer start operation and the transfer operation are changed in the solid-state imaging device 1 according to the second modification.

[0336] To explain this in more detail, during the period from the non-saturated accumulation operation to the transfer end operation, a fixed low voltage is constantly supplied to the control electrode 16 of the pixel 10. The voltage supplied to the control electrode 16 is always higher than the voltage supplied to the first electrode 14, and is always lower than the respective voltages supplied to the first accumulation electrode 2011 and the second accumulation electrode 2012.

[0337] In the transfer start operation, the high voltage is started to be supplied to the switching element 18 of the pixel 10 (time T2). After the transfer start operation, the transfer operation is started (time T3). The charge q1 accumulated in the charge transfer layer 202 by the first accumulation electrode 2011 is transferred to the floating diffusion 13 through the switching element 18.

[0338] Components other than the above-described components of the second modification are the same or substantially the same as those of the solid-state imaging device 1 and the pixel 10 according to the seventh embodiment.

[0339] [Function and Effect]

[0340] In the solid-state imaging device 1 according to the second modification, operations and effects similar to those obtained by the solid-state imaging device 1 according to the seventh embodiment can be obtained.

[0341] In addition, in the solid-state imaging device 1, as Fig.23 As shown, in the period from the non-saturated accumulation operation to the transfer end operation, a fixed low voltage is constantly supplied to the control electrode 16 of the pixel 10. For example, when a high voltage is supplied to the switching element 18, the transfer start operation is performed. That is, the transfer start operation and the transfer operation are performed by bringing the switching element 18 into a conductive state, so that in the solid-state imaging device 1, the transfer speed of the charge q1 accumulated in the charge transfer layer 202 by the first accumulation electrode 2011 can be accelerated.

[0342] Furthermore, in the solid-state imaging device 1, as Fig.23 As shown, in the period from the non-saturated accumulation operation to the transfer end operation, a low voltage is constantly supplied to the control electrode 16. That is, the control electrode 16 makes the energy potential barrier always high in the charge transfer layer 202. (Refer to Fig.19 ).

[0343] Therefore, for example, the flow of the charge q1 accumulated in the charge transport layer 202 by the first accumulation electrode 2011 toward the charge q2 to be accumulated in the charge transport layer 202 by the second accumulation electrode 2012 can be effectively suppressed or prevented. That is, blooming can be effectively suppressed or prevented.

[0344] <8. Eighth Implementation Plan>

[0345] Reference Fig.24 , a solid-state imaging device 1 according to an eighth embodiment of the present invention is described.

[0346] Fig.24 An example of a schematic planar configuration of the pixel 10 of the solid-state imaging device 1 is shown.

[0347] like Fig.24 As shown, the solid-state imaging device 1 according to the eighth embodiment is an example in which the solid-state imaging device 1 according to the third embodiment and the solid-state imaging device 1 according to the seventh embodiment are combined.

[0348] To explain this in more detail, the solid-state imaging device 1 includes the control electrode 16 between the first accumulation electrode 2011 and the second accumulation electrode of the pixel 10 , and includes the switch element 18 between the floating diffusion 13 and each of the first accumulation electrode 2011 and the second accumulation electrode 2012 .

[0349] A fixed voltage is supplied to the control electrode 16 in the same manner as the control electrode 16 of the solid-state imaging device 1 according to the third embodiment. The fixed voltage is equal to the fixed voltage supplied to the first electrode 14. In addition, the switching element 18 is the same component as the switching element 18 of the solid-state imaging device 1 according to the seventh embodiment.

[0350] Components other than the above-described components of the eighth embodiment are the same or substantially the same as those of the solid-state imaging device 1 and the pixel 10 according to the third embodiment or the seventh embodiment.

[0351] [Function and Effect]

[0352] In the solid-state imaging device 1 according to the eighth embodiment, the actions and effects obtained by the solid-state imaging device according to the third embodiment combined with the actions and effects obtained by the solid-state imaging device 1 according to the seventh embodiment can be obtained.

[0353] <9. Ninth Implementation Plan>

[0354] Reference Fig.25 , a solid-state imaging device 1 according to a ninth embodiment of the present invention will be described.

[0355] Fig.25 An example of a schematic planar configuration of the pixel 10 of the solid-state imaging device 1 is shown.

[0356] like Fig.25 As shown, the solid-state imaging device 1 according to the ninth embodiment is an example in which the solid-state imaging device 1 according to the sixth embodiment and the solid-state imaging device 1 according to the seventh embodiment are combined.

[0357] To explain this in more detail, in the solid-state imaging device 1, in the same manner as the solid-state imaging device 1 according to the sixth embodiment, the respective control electrodes 16 of the pixels 10 adjacent to each other in the arrow Y direction are integrally formed, and the second electrode 17 is provided between the control electrode 16 and the floating diffusion 13. Furthermore, in the solid-state imaging device 1, the respective switching elements 18 are provided between the first accumulation electrode 2011 and the floating diffusion 13 of the pixel 10 and between the second accumulation electrode 2012 and the floating diffusion 13.

[0358] Components other than the above-described components of the ninth embodiment are the same or substantially the same as those of the solid-state imaging device 1 and the pixel 10 according to the sixth embodiment or the seventh embodiment.

[0359] [Function and Effect]

[0360] In the solid-state imaging device 1 according to the ninth embodiment, it is possible to obtain the actions and effects obtained by combining the actions and effects obtained by the solid-state imaging device 1 according to the sixth embodiment with the actions and effects obtained by the solid-state imaging device 1 according to the seventh embodiment.

[0361] <10. Tenth Implementation Plan>

[0362] Reference Fig.26, a solid-state imaging device 1 according to a tenth embodiment of the present invention will be described.

[0363] Fig.26 An example of a schematic planar configuration of the pixel 10 of the solid-state imaging device 1 is shown.

[0364] like Fig.26 As shown, in the solid-state imaging device 1 according to the tenth embodiment, the configuration of the pixel 10 of the solid-state imaging device 1 according to the first embodiment is changed.

[0365] To explain this in more detail, in the pixel 10 , the first accumulation electrode 2011 and the second accumulation electrode 2012 are disposed spaced apart from each other in the second direction of the arrow Y. The control electrode 16 is disposed between the first accumulation electrode 2011 and the second accumulation electrode 2012 .

[0366] At the same time, in another pixel 10 adjacent to the pixel 10 in the arrow X direction as the first direction, similarly, the first accumulation electrode 2011 and the second accumulation electrode 2012 are arranged to be spaced apart from each other in the arrow Y direction, and the control electrode 16 is arranged between the first accumulation electrode 2011 and the second accumulation electrode 2012.

[0367] Between the pixels 10 adjacent to each other in the direction of arrow X, a floating diffusion 13 shared by both of them is provided near the first accumulation electrodes 2011 of the adjacent pixels *. Similarly, between the pixels 10 adjacent to each other in the direction of arrow X, a floating diffusion 13 shared by both of them is provided near the second accumulation electrodes 2012 of the adjacent pixels *.

[0368] Components other than the above-described components of the tenth embodiment are the same or substantially the same as those of the solid-state imaging device 1 and the pixel 10 according to the first embodiment.

[0369] [Function and Effect]

[0370] In the solid-state imaging device 1 according to the tenth embodiment, operations and effects similar to those obtained by the solid-state imaging device 1 according to the first embodiment can be obtained.

[0371] In particular, the solid-state imaging device 1 is effective in the case where the pixels 10 are driven in the arrow Y direction as the second direction for phase difference detection.

[0372] <11. Eleventh Implementation Plan>

[0373] Reference Fig. 27 , a solid-state imaging device 1 according to an eleventh embodiment of the present invention is described.

[0374] Fig. 27An example of a schematic planar configuration of the pixel 10 of the solid-state imaging device 1 is shown.

[0375] like Fig. 27 As shown, the solid-state imaging device 1 according to the eleventh embodiment is an example in which the solid-state imaging device 1 according to the fourth embodiment and the solid-state imaging device 1 according to the tenth embodiment are combined.

[0376] To explain this in more detail, the respective control electrodes of the pixels 10 adjacent to each other in the arrow X direction as the first direction are integrally formed.

[0377] Components other than the above-described components of the eleventh embodiment are the same or substantially the same as those of the solid-state imaging device 1 and the pixel 10 according to the fourth embodiment or the tenth embodiment.

[0378] [Function and Effect]

[0379] In the solid-state imaging device 1 according to the eleventh embodiment, it is possible to obtain the actions and effects obtained by combining the actions and effects obtained by the solid-state imaging device 1 according to the fourth embodiment with the actions and effects obtained by the solid-state imaging device 1 according to the tenth embodiment.

[0380] <12. Twelfth Implementation Plan>

[0381] Reference Fig.28 , a solid-state imaging device 1 according to a twelfth embodiment of the present invention is described.

[0382] Fig.28 An example of a longitudinal cross-sectional configuration of the pixel 10 of the solid-state imaging device 1 is shown.

[0383] [Structure of Solid-State Imaging Device 1]

[0384] like Fig.28 As shown, the solid-state imaging device 1 includes a color filter 30 in the pixel 10. Although its planar configuration is omitted, in the solid-state imaging device 1, two pixels 10 arranged in the arrow X direction and two pixels 10 arranged in the arrow Y direction are configured as a pixel unit, and a plurality of such pixel units are arranged.

[0385] For each pixel 10, a color filter 30 is provided between the protective film 21 and the optical lens 22. The color filter 30 selectively transmits red light (R), green light (G) or blue light (B). For example, two pixels 10 arranged on one diagonal line of the pixel unit are provided with a color filter 30 that selectively transmits green light. In addition, two pixels 10 arranged on another diagonal line of the pixel unit are provided with a color filter 30 that selectively transmits red light and a color filter 30 that selectively transmits blue light. That is, the pixels 10 are arranged in a Bayer shape.

[0386] The organic photoelectric conversion section 20 detects light in the visible light region corresponding to each color of the color filter 30. Meanwhile, the inorganic photoelectric conversion section 12 detects light of a different wavelength from the light detected by the organic photoelectric conversion section 20. For example, the light of a different wavelength refers to infrared light (IR) in an infrared light region having a wavelength of 700 nm or more and 1000 nm or less.

[0387] Components other than the above-described components of the twelfth embodiment are the same or substantially the same as those of the solid-state imaging device 1 and the pixel 10 according to any one of the first to eleventh embodiments.

[0388] [Function and Effect]

[0389] In the solid-state imaging device 1 according to the twelfth embodiment, it is possible to obtain operations and effects similar to those obtained by the solid-state imaging device 1 according to any one of the first to eleventh embodiments.

[0390] In addition, in the solid-state imaging device 1 , it is possible to configure phase difference detection pixels corresponding to visible light.

[0391] <13. Thirteenth Implementation Plan>

[0392] Reference Fig.29 , a solid-state imaging device 1 according to a thirteenth embodiment of the present invention is described.

[0393] Fig.29 An example of a longitudinal cross-sectional configuration of the pixel 10 of the solid-state imaging device 1 is shown.

[0394] [Structure of Solid-State Imaging Device 1]

[0395] like Fig.29 As shown, the solid-state imaging device 1 is a modification example of the solid-state imaging device 1 according to the twelfth embodiment.

[0396] To explain this in more detail, in the solid-state imaging device, the color filter 30 is provided between the inorganic photoelectric conversion unit 12 and the organic photoelectric conversion unit 20. Two pixels 10 arranged on one diagonal line of the above-mentioned pixel unit are provided with the color filter 30 that selectively transmits red light. At the same time, two pixels 10 arranged on the other diagonal line of the pixel unit are provided with the color filter 30 that selectively transmits blue light.

[0397] The organic photoelectric conversion section 20 is configured to selectively absorb green light.

[0398] The inorganic photoelectric conversion section 12 acquires signals corresponding to red light (R) and blue light (B).

[0399] Components other than the above-described components of the thirteenth embodiment are the same or substantially the same as those of the solid-state imaging device 1 and the pixel 10 according to any one of the first to eleventh embodiments.

[0400] [Function and Effect]

[0401] In the solid-state imaging device 1 according to the thirteenth embodiment, it is possible to obtain operations and effects similar to those obtained by the solid-state imaging device 1 according to any one of the first to eleventh embodiments.

[0402] In addition, in the solid-state imaging device 1, the areas of the inorganic photoelectric conversion section 12 and the organic photoelectric conversion section 20 that detect red, blue, and green light can be increased compared to the case with the conventional Bayer arrangement. Therefore, a phase difference detection pixel that can improve the S / N ratio can be configured.

[0403] <14. Fourteenth Implementation Plan>

[0404] Reference Fig.30 A solid-state imaging device 1 according to a fourteenth embodiment of the present invention will be described.

[0405] Fig.30 An example of a longitudinal cross-sectional configuration of the pixel 10 of the solid-state imaging device 1 is shown.

[0406] [Structure of Solid-State Imaging Device 1]

[0407] like Fig.30 As shown, the solid-state imaging device 1 is a modified example of the solid-state imaging device 1 according to any one of the first to eleventh embodiments.

[0408] To explain this in more detail, in the solid-state imaging device 1 according to the first embodiment, the solid-state imaging device further includes an organic photoelectric conversion unit (second organic photoelectric conversion unit) 23 between the organic photoelectric conversion unit (first organic photoelectric conversion unit) 20 and the optical lens 22. That is, the solid-state imaging device 1 has a structure in which the inorganic photoelectric conversion unit 12, the organic photoelectric conversion unit 20, and the organic photoelectric conversion unit 23 are stacked in this order.

[0409] The inorganic photoelectric conversion section 12 is, for example, a photoelectric conversion section that absorbs red light having a wavelength of 600 nm to 700 nm to generate electric charges.

[0410] The organic photoelectric conversion unit 20 is a photoelectric conversion unit that absorbs green light having a wavelength of 500 nm or more and less than 600 nm and generates electric charges, for example.

[0411] In addition, the organic photoelectric conversion section 23 is, for example, a photoelectric conversion section that absorbs blue light having a wavelength of 400 nm or more and less than 500 nm and generates electric charges.

[0412] It is to be noted that, for example, the organic photoelectric conversion section 20 and the organic photoelectric conversion section 23 may be replaced with each other as appropriate.

[0413] The organic photoelectric conversion section 23 includes an accumulation electrode 230, a charge transport layer 232, a photoelectric conversion layer 233, and an electrode 234 in the same manner as the organic photoelectric conversion section 20. The accumulation electrode 230 includes a first accumulation electrode 2301 and a second accumulation electrode 2302 disposed to be spaced apart from each other. In addition, the control electrode 16 is disposed between the first accumulation electrode 2301 and the second accumulation electrode 2302.

[0414] Components other than the above-described components of the fourteenth embodiment are the same or substantially the same as those of the solid-state imaging device 1 and the pixel 10 according to any one of the first to eleventh embodiments.

[0415] [Function and Effect]

[0416] In the solid-state imaging device 1 according to the fourteenth embodiment, it is possible to obtain operations and effects similar to those obtained by the solid-state imaging device 1 according to any one of the first to eleventh embodiments.

[0417] In addition, the solid-state imaging device 1 has a stacked structure in which the inorganic photoelectric converter 12, the organic photoelectric converter 20, and the organic photoelectric converter 23 are stacked in this order. Therefore, in the solid-state imaging device 1, a phase difference detection pixel capable of detecting red, blue, and green light can be simply configured.

[0418] <15. Fifteenth Implementation Plan>

[0419] Reference Fig.31 , a solid-state imaging device 1 according to a fifteenth embodiment of the present invention is described.

[0420] Fig.31 An example of a block configuration of the electronic device 7 is shown.

[0421] [Structure of electronic device 7]

[0422] like Fig.31 As shown, the electronic device 7 includes the solid-state imaging device 1 according to any one of the first embodiment to the fourteenth embodiment as a photodetector 70. The photodetector 70 is applied to various types of electronic devices including imaging systems such as digital cameras and video cameras, mobile phones with imaging functions, or other devices with imaging functions, for example.

[0423] The electronic device 7 includes an optical system 71, a photodetector 70, and a DSP (digital signal processor) 72. In the electronic device 7, the DSP 72, a display device 73, an operating system 74, a memory 75, a recording device 76, and a power supply system 77 are connected to each other via a bus 78. The electronic device 7 is capable of capturing still images and moving images.

[0424] The optical system 71 includes one or more lenses. The optical system 71 guides image light (incident light) from a subject to the photodetector 70 to form an image on a light receiving surface (sensor portion) of the photodetector 70.

[0425] For example, the solid-state imaging device 1 according to any one of the first to fourteenth embodiments is used as the photodetector 70. In the photodetector 70, electrons are accumulated for a certain period of time in response to an image formed on a light receiving surface by the optical system 71. Then, a signal corresponding to the electrons accumulated in the photodetector 70 is supplied to the DSP 72.

[0426] The DSP 72 performs various types of signal processing on the signal from the photodetector 70 to acquire an image, and causes the memory 75 to temporarily store data on the image. The data on the image stored in the memory 75 is recorded in the recording device 76. In addition, the data on the image stored in the memory 75 is supplied to the display device 73, and the image is displayed in the display device 73. In addition, the operating system 74 accepts various operations of the user, and supplies operation signals to the various blocks of the electronic device 7. The power supply system 77 supplies power required to drive the various blocks of the electronic device 7.

[0427] [Function and Effect]

[0428] like Fig.31 As shown, the electronic device 7 according to the fifteenth embodiment includes a photodetector 70. As described with respect to the solid-state imaging device 1 according to any one of the first to fourteenth embodiments, the photodetector 70 is formed to include phase difference detection pixels, for example, on the entire surface of the pixel region 100. Therefore, the phase difference detection accuracy of the electronic device 7 can be improved.

[0429] <16. Sixteenth Implementation Plan>

[0430] Reference Fig.32 and 33 , a photoelectric detection system 2000 according to a sixteenth embodiment of the present invention is described.

[0431] Fig.32 An example of a system configuration of a photodetection system 2000 including a photodetector 2002 is shown. Fig.33 Shows Fig.32 An example of a circuit configuration of a photodetection system 2000 is shown.

[0432] The photodetection system 2000 includes a light emitting device 2001 that emits infrared light L2 as a light source and a photodetector 2002 having a photoelectric conversion element as a light receiving unit. The above-mentioned solid-state imaging device 1 can be used as the photodetector 2002. The photodetection system 2000 may further include a system control unit 2003, a light source driving unit 2004, a sensor control unit 2005, a light source side optical system 2006, and a camera side optical system 2007.

[0433] The photodetector 2002 is capable of detecting light L1 and light L2. Light L1 is reflected light of ambient light from the outside reflected by the subject (measurement object) 2100. Light L2 is light reflected by the subject 2100 after being emitted by the light emitting device 2001. Light L1 is, for example, visible light, and light L2 is, for example, infrared light. Light L1 is detectable at the photoelectric conversion portion of the photodetector 2002. Light L2 is detectable at the photoelectric conversion region of the photodetector 2002. Image information about the subject 2100 can be acquired from light L1, and information about the distance between the subject 2100 and the photodetection system 2000 can be acquired from light L2.

[0434] For example, the photodetection system 2000 may be mounted on an electronic device such as a smartphone or mounted on a moving body such as a car. For example, the light emitting device 2001 may be constructed by a semiconductor laser, a surface emitting semiconductor laser, or a vertical resonator surface emitting laser (VCSEL).

[0435] For example, an iTOF method may be used as a method for the photodetector 2002 to detect the light L2 emitted from the light emitting device 2001. It should be noted that this method is not limited. For example, in the iTOF method, the photoelectric conversion unit measures the distance to the subject 2100 by the time of flight (TOF) of light. As a method for the photodetector 2002 to detect the light L2 emitted from the light emitting device 2001, for example, a structured light method or a stereoscopic vision method may be used.

[0436] For example, in the structured light method, light having a predetermined pattern is projected on the subject 2100 , and distortion of the pattern is analyzed, thereby enabling measurement of the distance between the photodetection system 2000 and the subject 2100 .

[0437] In addition, in the stereoscopic vision method, for example, two or more cameras are used to obtain two or more images of the subject 2100 observed from two or more different viewpoints, thereby enabling measurement of the distance between the photodetection system 2000 and the subject. It should be noted that the system control unit 2003 synchronously controls the light emitting device 2001 and the photodetector 2002.

[0438] <17. Application examples of mobile objects>

[0439] The technology according to the embodiments of the present invention (the present technology) is applicable to various products. For example, the technology according to the embodiments of the present invention can be implemented in the form of a device installed on any type of mobile body. Non-limiting examples of mobile bodies can include automobiles, electric vehicles, hybrid vehicles, motorcycles, bicycles, personal mobile devices, airplanes, unmanned aerial vehicles (UAVs), ships, and robots.

[0440] Fig.34 : is a block diagram showing an example of a schematic configuration of a vehicle control system as an example of a moving body control system to which the technology according to the embodiment of the present invention can be applied.

[0441] The vehicle control system 12000 includes a plurality of electronic control units connected to each other via a communication network 12001. Fig.34 In the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. In addition, as a functional configuration of the integrated control unit 12050, a microcomputer 12051, a sound and image output unit 12052, and an in-vehicle network interface (I / F) 12053 are shown.

[0442] The drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various types of programs. For example, the drive system control unit 12010 serves as a control device for the following devices: a drive force generating device such as an internal combustion engine or a drive motor for generating a vehicle drive force, a drive force transmitting mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a vehicle braking force.

[0443] The body system control unit 12020 controls the operation of various types of devices provided on the vehicle body according to various types of programs. For example, the body system control unit 12020 is used as a control device for a keyless entry system, a smart key system, a power window device, or various lights such as a headlight, a reverse light, a brake light, a turn signal light, or a fog light. In this case, a radio wave transmitted from a mobile device that replaces the key or a signal of various types of switches may be input to the body system control unit 12020. The body system control unit 12020 receives input of these radio waves or signals, and controls a door lock device, a power window device, or a light, etc. of the vehicle.

[0444] The vehicle exterior information detection unit 12030 detects information outside the vehicle including the vehicle control system 12000. For example, the vehicle exterior information detection unit 12030 is connected to the camera unit 12031. The vehicle exterior information detection unit 12030 causes the camera unit 12031 to capture an image of the vehicle exterior and receives the captured image. Based on the received image, the vehicle exterior information detection unit 12030 may perform detection processing of objects such as people, vehicles, obstacles, signs, or characters on the road surface, or may perform detection processing of the distance to the above-mentioned objects.

[0445] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 may output the electrical signal as an image, or may output the electrical signal as distance measurement information. In addition, the light received by the imaging unit 12031 may be visible light, or may be invisible light such as infrared rays.

[0446] The in-vehicle information detection unit 12040 detects information about the interior of the vehicle. The in-vehicle information detection unit 12040 is connected to, for example, a driver state detection unit 12041 that detects the driver's state. The driver state detection unit 12041 includes, for example, a camera that takes a picture of the driver. Based on the detection information input from the driver state detection unit 12041, the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or the driver's concentration level, or can determine whether the driver is dozing off.

[0447] The microcomputer 12051 can calculate the control target value of the driving force generating device, the steering mechanism or the braking device based on the information outside or inside the vehicle obtained by the vehicle outside information detection unit 12030 or the vehicle inside information detection unit 12040, and output the control command to the driving system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of the advanced driver assistance system (ADAS), including collision avoidance or impact mitigation of the vehicle, following driving based on the vehicle-to-vehicle distance, speed maintenance driving, vehicle collision warning or vehicle lane departure warning, etc.

[0448] In addition, by controlling the driving force generating device, steering mechanism or braking device, etc. based on the information outside or inside the vehicle obtained by the external information detection unit 12030 or the internal information detection unit 12040, the microcomputer 12051 can perform collaborative control aimed at achieving automatic driving, etc., wherein the automatic driving enables the vehicle to drive autonomously without relying on the driver's operation.

[0449] In addition, based on the information outside the vehicle obtained by the vehicle exterior information detection unit 12030, the microcomputer 12051 can output a control command to the body system control unit 12020. For example, the microcomputer 12051 can perform cooperative control aimed at preventing glare by controlling the headlights to change from high beam to low beam, for example, according to the position of the preceding vehicle or the oncoming vehicle detected by the vehicle exterior information detection unit 12030.

[0450] The audio and video output unit 12052 sends an output signal of at least one of audio and video to an output device capable of visually or auditorily notifying the vehicle's passengers or the outside of the vehicle of the information. Fig.34 In the example of , as the output device, an audio speaker 12061, a display portion 12062, and an instrument panel 12063 are shown. For example, the display portion 12062 may include at least one of an in-vehicle display and a head-up display.

[0451] Fig.35 12031 is a diagram showing an example of the installation position of the camera unit 12031.

[0452] exist Fig.35 In the figure, the camera unit 12031 includes camera units 12101, 12102, 12103, 12104 and 12105.

[0453] The camera units 12101, 12102, 12103, 12104 and 12105 are, for example, arranged at the front nose, rearview mirror, rear bumper and rear door of the vehicle 12100 and at the upper part of the windshield in the vehicle compartment. The camera unit 12101 arranged at the front nose and the camera unit 12105 arranged at the upper part of the windshield in the vehicle compartment mainly obtain images in front of the vehicle 12100. The camera units 12102 and 12103 arranged at the rearview mirror mainly obtain images on both sides of the vehicle 12100. The camera unit 12104 arranged at the rear bumper or rear door mainly obtains images behind the vehicle 12100. The camera unit 12105 arranged at the upper part of the windshield in the vehicle compartment is mainly used to detect vehicles in front, pedestrians, obstacles, traffic lights, traffic signs or lanes, etc.

[0454] By the way, Fig.35An example of the imaging range of the imaging units 12101 to 12104 is shown. The imaging range 12111 indicates the imaging range of the imaging unit 12101 provided at the front nose. The imaging ranges 12112 and 12113 respectively indicate the imaging ranges of the imaging units 12102 and 12103 provided at the rearview mirror. The imaging range 12114 indicates the imaging range of the imaging unit 12104 provided at the rear bumper or the rear door. For example, by superimposing the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 observed from above is obtained.

[0455] At least one of the imaging units 12101 to 12104 may have a function of obtaining distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera composed of a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.

[0456] For example, based on the distance information obtained from the camera units 12101 to 12104, the microcomputer 12051 can determine the distance to each three-dimensional object within the camera ranges 12111 to 12114 and the time change of the distance (relative speed with respect to the vehicle 12100), thereby extracting the nearest three-dimensional object as the front vehicle, in particular, the three-dimensional object exists on the driving path of the vehicle 12100 and travels in the same direction as the vehicle 12100 at a predetermined speed (e.g., equal to or greater than 0 km / h). In addition, the microcomputer 12051 can pre-set the inter-vehicle distance to be maintained with the front vehicle, and perform automatic braking control (including follow-up stop control) or automatic acceleration control (including follow-up start control), etc. Therefore, cooperative control such as automatic driving, which aims to make the vehicle travel autonomously without relying on the driver's operation, can be performed.

[0457] For example, based on the distance information obtained from the camera units 12101 to 12104, the microcomputer 12501 can classify the three-dimensional object data of the three-dimensional object into three-dimensional object data such as two-wheeled vehicles, standard vehicles, large vehicles, pedestrians, telephone poles and other three-dimensional objects, extract the classified three-dimensional object data, and use the extracted three-dimensional object data to automatically avoid obstacles. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that the driver of the vehicle 12100 can visually identify and obstacles that the driver of the vehicle 12100 is difficult to visually identify. Then, the microcomputer 12051 determines a collision risk for indicating the risk of collision with each obstacle. In the case where the collision risk is equal to or higher than the set value and therefore there is a possibility of collision, the microcomputer 12051 outputs a warning to the driver via the audio speaker 12061 or the display unit 12062, and performs forced deceleration or evasive steering via the drive system control unit 12010. Therefore, the microcomputer 12051 can assist driving to avoid collisions.

[0458] At least one of the camera units 12101 to 12104 may be an infrared camera that detects infrared rays. The microcomputer 12051 is capable of identifying pedestrians, for example, by determining whether there are pedestrians in the camera images of the camera units 12101 to 12104. For example, such identification of pedestrians is performed by the following steps: extracting feature points in the camera images of the camera units 12101 to 12104 as infrared cameras; and performing pattern matching processing on a series of feature points representing the contour of the object to determine whether it is a pedestrian. If the microcomputer 12051 determines that there are pedestrians in the camera images of the camera units 12101 to 12104 and thus identifies the pedestrian, the sound image output unit 12052 controls the display unit 12062 so that a square contour line for emphasis is displayed in a manner superimposed on the identified pedestrian. The sound image output unit 12052 may also control the display unit 12062 so that an icon representing a pedestrian or the like is displayed at a desired position.

[0459] An example of a vehicle control system to which the technology according to an embodiment of the present invention can be applied has been described above. The technology according to an embodiment of the present invention can be applied to the camera unit 12031 in the above-mentioned structured components. Applying the technology according to an embodiment of the present invention to the camera unit 12031 enables the camera unit 12031 of a simple structure to be realized.

[0460] <18. Application examples of endoscopic surgery systems>

[0461] The technology according to the embodiment of the present invention (the present technology) is applicable to various products. For example, the technology according to the embodiment of the present invention can be applied to an endoscopic surgery system.

[0462] Fig.36 : is a diagram showing a schematic configuration example of an endoscopic surgery system to which the technology according to the embodiment of the present invention (the present technology) can be applied.

[0463] exist Fig.36 , a state is shown in which a surgeon (doctor) 11131 is using an endoscopic surgery system 11000 to perform surgery on a patient 11132 on a bed 11133. As shown in the figure, the endoscopic surgery system 11000 includes an endoscope 11100, other surgical tools 11110 (such as a pneumoperitoneum tube 11111 and an energy device 11112), a support arm device 11120 (on which the endoscope 11100 is supported), and a cart 11200, on which various devices used for endoscopic surgery are loaded.

[0464] The endoscope 11100 includes a lens barrel 11101 and a camera 11102 connected to the proximal end of the lens barrel 11101, and the lens barrel 11101 has a region of a predetermined length from its distal end for insertion into a body cavity of a patient 11132. In the illustrated example, the endoscope 11100 is illustrated as a rigid endoscope including the lens barrel 11101 as having a hard type. However, the endoscope 11100 may also be a flexible endoscope including the lens barrel 11101 as having flexibility.

[0465] The lens barrel 11101 has an opening at its distal end for mounting an objective lens. The light source device 11203 is connected to the endoscope 11100 so that the light generated by the light source device 11203 is guided to the distal end of the lens barrel 11101 through a light guide extending inside the lens barrel 11101 and irradiated toward an observation target in the body cavity of the patient 11132 through the objective lens. It should be noted that the endoscope 11100 may be a forward-looking endoscope, or may be an oblique-looking endoscope or a side-looking endoscope.

[0466] An optical system and an imaging element are provided inside the camera head 11102, so that the reflected light (observation light) from the observation target is gathered on the imaging element by the optical system. The imaging element performs photoelectric conversion on the observation light to generate an electrical signal corresponding to the observation light, that is, an image signal corresponding to the observation image. The image signal is transmitted to the camera control unit (CCU) 11201 as raw data.

[0467] The CCU 11201 includes a central processing unit (CPU), a graphics processing unit (GPU), etc., and centrally controls the operations of the endoscope 11100 and the display device 11202. In addition, the CCU 11201 receives an image signal from the camera 11102, and performs various image processing for displaying an image based on the image signal, such as development processing (demosaic processing), on the image signal.

[0468] The display device 11202 displays an image based on an image signal that has been image-processed by the CCU 11201 under the control of the CCU 11201 .

[0469] The light source device 11203 includes a light source such as, for example, a light emitting diode (LED), and provides illumination light to the endoscope 11100 when imaging a surgical area or the like.

[0470] The input device 11204 is an input interface for the endoscopic surgery system 11000. The user can input various types of information or instructions to the endoscopic surgery system 11000 through the input device 11204. For example, the user will input instructions through the endoscope 11100 to change image capturing conditions (type of irradiation light, magnification or focal length, etc.).

[0471] The treatment tool control device 11205 controls the driving of the energy device 11112 for cauterizing or cutting tissue, sealing blood vessels, etc. The pneumoperitoneum device 11206 delivers gas into the body cavity of the patient 11132 through the pneumoperitoneum tube 11111 to inflate the body cavity to ensure the field of view of the endoscope 11100 and to ensure the working space of the surgeon. The recorder 11207 is a device capable of recording various types of information related to the operation. The printer 11208 is a device capable of printing various types of information related to the operation in various forms (such as text, images, or graphics).

[0472] It should be noted that the light source device 11203 that provides the irradiation light when the surgical area is to be imaged to the endoscope 11100 may include a white light source such as an LED, a laser light source, or a combination thereof. In the case where the white light source includes a combination of red, green, and blue (RGB) laser light sources, since the output intensity and output timing of each color (each wavelength) can be controlled with high precision, the white balance adjustment of the captured image can be performed by the light source device 11203. In addition, in this case, if the laser beams from each RGB laser light source are irradiated onto the observation target in a time-sharing manner, and the drive of the imaging element of the camera 11102 is controlled synchronously with the irradiation timing, it is also possible to capture images corresponding to each of R, G, and B in a time-sharing manner. According to this method, a color image can be obtained even if a color filter is not provided for the imaging element.

[0473] In addition, the light source device 11203 can be controlled so that the intensity of the light to be output changes at predetermined intervals. By controlling the driving of the camera device of the camera 11102 in synchronization with the timing of the change in light intensity to acquire images in a time-sharing manner and synthesize the images, it is possible to create an image with a high dynamic range without underexposed shadows and overexposed highlights.

[0474] In addition, the light source device 11203 can be configured to provide light of a predetermined wavelength band that can be used for special light observation. In special light observation, for example, by utilizing the wavelength dependence of light absorption in human tissue to irradiate light of a narrower wavelength band than the irradiation light (i.e., white light) for ordinary observation, narrow-band light observation for imaging predetermined tissues (e.g., blood vessels on the surface of mucous membranes, etc.) with high contrast is performed. Alternatively, in special light observation, fluorescence observation for obtaining images by fluorescence generated by irradiation with excitation light can be performed. In fluorescence observation, fluorescence from body tissue can be observed by irradiating excitation light onto body tissue (autofluorescence observation) or a fluorescent image can be obtained by locally injecting an agent (such as indocyanine green (ICG)) and irradiating excitation light corresponding to the fluorescence wavelength of the agent onto human tissue. The light source device 11203 can be configured to provide narrow-band light and / or excitation light suitable for the above-mentioned special light observation.

[0475] Fig.37 It shows Fig.36 A block diagram of an example of the functional configuration of the camera 11102 and the CCU 11201 shown.

[0476] The camera 11102 includes a lens unit 11401, an imaging unit 11402, a driving unit 11403, a communication unit 11404, and a camera control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera 11102 and the CCU 11201 are connected to each other through a transmission cable 11400 for communication.

[0477] The lens unit 11401 is an optical system provided at a connection position with the lens barrel 11101. Observation light taken from the distal end of the lens barrel 11101 is guided to the camera head 11102 and introduced into the lens unit 11401. The lens unit 11401 includes a combination of a plurality of lenses including a zoom lens and a focus lens.

[0478] The number of imaging elements included in the imaging unit 11402 can be one (single-board type) or multiple (multi-board type). For example, in the case where the imaging unit 11402 is configured as a multi-board type imaging unit, image signals corresponding to each of R, G and B are generated by the imaging element, and the image signals can be synthesized to obtain a color image. The imaging unit 11402 can also be constructed to have a pair of imaging elements for respectively acquiring image signals for the right eye and for the left eye, thereby being used for three-dimensional (3D) display. If 3D display is performed, the surgeon 11131 can more accurately understand the depth of living tissue in the surgical area. It should be noted that in the case where the imaging unit 11402 is configured as a stereoscopic type imaging unit, multiple systems of lens units 11401 are provided corresponding to each imaging element.

[0479] In addition, the imaging unit 11402 does not have to be provided on the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101 just behind the objective lens.

[0480] The driving unit 11403 includes an actuator and moves the zoom lens and the focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera control unit 11405. Therefore, the magnification and focus of the image captured by the camera unit 11402 can be appropriately adjusted.

[0481] The communication unit 11404 includes a communication device for sending and receiving various types of information to and from the CCU 11201. The communication unit 11404 sends an image signal acquired from the imaging unit 11402 to the CCU 11201 through the transmission cable 11400 as RAW data.

[0482] In addition, the communication unit 11404 receives a control signal for controlling the driving of the camera 11102 from the CCU 11201, and provides the control signal to the camera control unit 11405. The control information includes information related to imaging conditions, such as information specifying a frame rate for capturing an image, information specifying an exposure value when capturing an image, and / or information specifying a magnification and a focus for capturing an image.

[0483] It should be noted that image capturing conditions such as frame rate, exposure value, magnification, or focus may be specified by a user or may be automatically set based on an acquired image signal by the control unit 11413 of the CCU 11201. In the latter case, the endoscope 11100 includes an automatic exposure (AE) function, an automatic focus (AF) function, and an automatic white balance (AWB) function.

[0484] The camera control unit 11405 controls the driving of the camera 11102 based on the control signal received from the CCU 11201 through the communication unit 11404 .

[0485] The communication unit 11411 includes a communication device for sending various types of information to the camera 11102 and receiving various types of information from the camera 11102. Through the transmission cable 11400, the communication unit 11411 receives an image signal sent thereto from the camera 11102.

[0486] In addition, the communication unit 11411 sends a control signal for controlling the driving of the camera 11102 to the camera 11102. The image signal and the control signal can be transmitted through electrical communication, optical communication, etc.

[0487] The image processing unit 11412 performs various image processing on the image signal in the form of RAW data sent thereto from the camera 11102 .

[0488] The control unit 11413 performs various types of control related to imaging of the operation area, etc. by the endoscope 11100 and display of a captured image obtained by imaging the operation area, etc. For example, the control unit 11413 creates a control signal for controlling the driving of the camera head 11102 .

[0489] In addition, the control unit 11413 controls the display device 11202 to display a captured image of the surgical area, etc., based on the image signal that has been image-processed by the image processing unit 11412. Therefore, the control unit 11413 can use various image recognition technologies to recognize various objects in the captured image. For example, the control unit 11413 can recognize surgical tools such as forceps, specific living areas, bleeding, fog when the energy device 11112 is used, etc. by detecting the shape, color, etc. of the edge of the object contained in the captured image. When the control unit 11413 controls the display device 11202 to display the captured image, the control unit 11413 can use the recognition result to display various types of surgical support information in a manner overlapping with the image of the surgical area. When the surgical support information is displayed in an overlapping manner and presented to the surgeon 11131, the burden of the surgeon 11131 can be reduced, and the surgeon 11131 can perform the operation with confidence.

[0490] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 to each other is an electric signal cable capable of being used for electric signal communication, an optical fiber capable of being used for optical communication, or a composite cable capable of being used for electric communication and optical communication.

[0491] Here, although in the illustrated example, communication is performed by wired communication using the transmission cable 11400, communication between the camera 11102 and the CCU 11201 may be performed by wireless communication.

[0492] An example of an endoscopic surgical system to which the technology according to an embodiment of the present invention can be applied has been described above. The technology according to an embodiment of the present invention can be applied to, for example, the imaging unit 11402 of the endoscope 11100 or the camera 11102. Specifically, a phase difference detection pixel for detecting a phase difference is configured in the imaging unit 11402. Applying the technology according to an embodiment of the present invention makes it possible to simplify the arrangement of the phase difference detection pixels in a predetermined area of ​​the pixel area in the imaging unit 11402 or on the entire surface.

[0493] It should be noted that although an endoscopic surgery system is described here as an example, the technology according to the embodiment of the present invention can also be applied to, for example, a microsurgery system and the like.

[0494] <19. Other Implementation Schemes>

[0495] The present technology is not limited to the above-described embodiments, and various modifications may be made without departing from the gist of the present technology.

[0496] For example, in the solid-state imaging devices according to the above-described first to sixteenth embodiments, the solid-state imaging devices according to two or more embodiments may be combined.

[0497] A solid-state imaging device according to a first embodiment of the present invention includes a first electrode, a charge transfer layer, a photoelectric conversion layer, an electrode, first and second accumulation electrodes, and a first control electrode.

[0498] The first electrode is arranged to surround a portion of the periphery of the first pixel. The first electrode is supplied with a fixed voltage. A charge transfer layer is arranged at least in a region opposite to the first electrode and corresponding to the first pixel. The charge transfer layer transfers charges. A photoelectric conversion layer is arranged on a side of the charge transfer layer opposite to the first electrode. The photoelectric conversion layer converts light into charges. An electrode is arranged on a side of the photoelectric conversion layer opposite to the charge transfer layer. The electrode supplies a voltage to the photoelectric conversion layer.

[0499] Here, the first accumulation electrode and the second accumulation electrode are arranged to be spaced apart from each other on the side of the charge transport layer opposite to the photoelectric conversion layer in the region corresponding to the first pixel. Each of the first accumulation electrode and the second accumulation electrode accumulates charges in the charge transport layer.

[0500] Furthermore, the first control electrode is provided between the first accumulation electrode and the second accumulation electrode. The first control electrode transfers one of the charges accumulated by the first accumulation electrode and the second accumulation electrode.

[0501] This enables the first pixel to transfer one of the charges accumulated in the charge transfer layer by the first accumulation electrode or the charges accumulated in the charge transfer layer by the second accumulation electrode, and to be configured as a phase difference detection pixel that detects a phase difference. The first pixels arranged over the entire surface of the pixel area enable the phase difference detection pixel to be configured over the entire surface of the pixel area.

[0502] In a solid-state imaging device according to a second embodiment of the present invention, in the solid-state imaging device according to the first embodiment, a first accumulation electrode and a second accumulation electrode are arranged to be spaced apart from each other in a first direction. In addition, in the solid-state imaging device according to the second embodiment, a second pixel is arranged in a second direction intersecting with the first direction relative to the first pixel.

[0503] The second pixel includes a first electrode, a charge transfer layer, a photoelectric conversion layer, an electrode, third and fourth accumulation electrodes, and a second control electrode.

[0504] The first electrode is arranged to surround a part of the periphery of the second pixel. The first electrode is supplied with a fixed voltage. A charge transfer layer is arranged at least in a region opposite to the first electrode and corresponding to the second pixel. The charge transfer layer transfers charges. A photoelectric conversion layer is arranged on a side of the charge transfer layer opposite to the first electrode. The photoelectric conversion layer converts light into charges. An electrode is arranged on a side of the photoelectric conversion layer opposite to the charge transfer layer. The electrode supplies a voltage to the photoelectric conversion layer.

[0505] Here, the third accumulation electrode and the fourth accumulation electrode are arranged to be spaced apart from each other on the side of the charge transport layer opposite to the photoelectric conversion layer in the region corresponding to the second pixel. Each of the third accumulation electrode and the fourth accumulation electrode accumulates charges in the charge transport layer.

[0506] Furthermore, the second control electrode is provided between the third accumulation electrode and the fourth accumulation electrode. The second control electrode transfers one of the charges accumulated by the third accumulation electrode and the fourth accumulation electrode.

[0507] This enables the second pixel to transfer one of the charges accumulated in the charge transfer layer by the third accumulation electrode or the charges accumulated in the charge transfer layer by the fourth accumulation electrode, and to be configured as a phase difference detection pixel for detecting a phase difference. The first pixel and the second pixel arranged on the entire surface of the pixel area enable the phase difference detection pixel to be configured on the entire surface of the pixel area.

[0508] <Structure of this technology>

[0509] The present technology has the following configuration. According to the present technology configured as follows, in the solid-state imaging device, it is possible to simply arrange the phase difference detection pixels in a predetermined area of ​​the pixel area or on the entire surface. (1)

[0511] A solid-state imaging device, comprising:

[0512] a first electrode disposed to surround a portion of a periphery of the first pixel and supplied with a fixed voltage;

[0513] a charge transport layer, which is provided at least in a region opposite to the first electrode and corresponding to the first pixel, and the charge transport layer transports charges;

[0514] A photoelectric conversion layer, which is disposed on a side of the charge transport layer opposite to the first electrode, and the photoelectric conversion layer converts light into charges;

[0515] an electrode disposed on a side of the photoelectric conversion layer opposite to the charge transport layer, the electrode supplying a voltage to the photoelectric conversion layer;

[0516] a first accumulation electrode and a second accumulation electrode which are provided at a distance from each other on a side of the charge transport layer opposite to the photoelectric conversion layer in a region corresponding to the first pixel, the first accumulation electrode and the second accumulation electrode respectively accumulating charges in the charge transport layer; and

[0517] A first control electrode is provided between the first accumulation electrode and the second accumulation electrode, and the first control electrode transfers one of the charges accumulated by the first accumulation electrode and the charges accumulated by the second accumulation electrode. (2)

[0519] The solid-state imaging device according to the above (1), wherein the first pixel is a phase difference detection pixel that detects a phase difference. (3)

[0521] The solid-state imaging device according to (1) or (2) above, wherein a varying voltage is supplied to the first control electrode. (4)

[0523] The solid-state imaging device according to (1) or (2) above, wherein a fixed voltage is supplied to the first control electrode. (5)

[0525] The solid-state imaging device according to any one of (1) to (4), wherein a floating diffusion for transferring accumulated charges is provided near each of the first accumulation electrode and the second accumulation electrode. (6)

[0527] The solid-state imaging device according to any one of (1) to (5), wherein the first accumulation electrode and the second accumulation electrode are provided to be spaced apart from each other in the first direction. (7)

[0529] The solid-state imaging device according to (6) above, wherein:

[0530] The second pixel is arranged in a second direction relative to the first pixel, the second direction intersecting the first direction, and

[0531] The second pixel comprises:

[0532] the first electrode disposed to surround a portion of the periphery of the second pixel and supplied with a fixed voltage;

[0533] The charge transport layer is disposed at least in a region opposite to the first electrode and corresponding to the second pixel, and the charge transport layer transports charges;

[0534] The photoelectric conversion layer is disposed on a side of the charge transport layer opposite to the first electrode, and the photoelectric conversion layer converts light into charges;

[0535] The electrode is disposed on a side of the photoelectric conversion layer opposite to the charge transport layer, and the electrode applies a voltage to the photoelectric conversion layer;

[0536] a third accumulation electrode and a fourth accumulation electrode which are provided at a distance from each other on a side of the charge transport layer opposite to the photoelectric conversion layer in a region corresponding to the second pixel, the third accumulation electrode and the fourth accumulation electrode respectively accumulating charges in the charge transport layer, and

[0537] A second control electrode is provided between the third accumulation electrode and the fourth accumulation electrode, and the second control circuit transfers one of the charges accumulated by the third accumulation electrode and the charges accumulated by the fourth accumulation electrode. (8)

[0539] The solid-state imaging device according to the above (7), wherein the second control electrode is formed integrally with the first control electrode. (9)

[0541] The solid-state imaging device according to (7) or (8) above, wherein a second electrode is provided between the floating diffusion and each of the first control electrode and the second control electrode, and a fixed voltage is supplied to the second electrode. (10)

[0543] The solid-state imaging device according to the above (9), wherein the fixed voltage supplied to the second electrode is equal to the fixed voltage supplied to the first electrode. (11)

[0545] The solid-state imaging device according to any one of (1) to (10) above, wherein a switching element is provided between the first accumulation electrode and the floating diffusion and between the second accumulation electrode and the floating diffusion, respectively. (12)

[0547] The solid-state imaging device according to any one of (1) to (5), wherein:

[0548] The first accumulation electrode and the second accumulation electrode are arranged to be spaced apart from each other in a second direction,

[0549] The second pixel is arranged in a first direction relative to the first pixel, the first direction intersects the second direction, and

[0550] The second pixel comprises:

[0551] the first electrode being arranged to surround a portion of the periphery of the second pixel and to supply a fixed voltage thereto;

[0552] The charge transport layer is disposed at least in a region opposite to the first electrode and corresponding to the second pixel, and the charge transport layer transports charges;

[0553] The photoelectric conversion layer is disposed on the side of the charge transport layer opposite to the first electrode, and the photoelectric conversion layer converts light into charges;

[0554] The electrode is disposed on a side of the photoelectric conversion layer opposite to the charge transport layer, and the electrode supplies a voltage to the photoelectric conversion layer;

[0555] a third accumulation electrode and a fourth accumulation electrode which are provided in a region corresponding to the second pixel on a side of the charge transport layer opposite to the photoelectric conversion layer and are spaced apart from each other along the second direction, the third accumulation electrode and the fourth accumulation electrode respectively accumulating charges in the charge transport layer; and

[0556] A second control electrode is provided between the third accumulation electrode and the fourth accumulation electrode, and the second control electrode transfers one of the charges accumulated by the third accumulation electrode and the charges accumulated by the fourth accumulation electrode. (13)

[0558] The solid-state imaging device according to the above (12), wherein a floating diffusion for transferring accumulated charges is provided near each of the first accumulation electrode and the third accumulation electrode and near each of the second accumulation electrode and the fourth accumulation electrode. (14)

[0560] The solid-state imaging device according to (9) above, wherein the first control electrode and the second control electrode are formed in the same conductive layer as each of the first accumulation electrode, the second accumulation electrode, the third accumulation electrode, and the fourth accumulation electrode. (15)

[0562] The solid-state imaging device described in (9) above, wherein the first control electrode and the second control electrode are formed in a conductive layer different from each of the first accumulation electrode, the second accumulation electrode, the third accumulation electrode, and the fourth accumulation electrode. (16)

[0564] The solid-state imaging device according to (7) or (12) above, wherein the plurality of the first pixels and the plurality of the second pixels are arranged along the first direction and the second direction, respectively, and constitute a pixel area. (17)

[0566] A solid-state imaging device according to (7) or (12) above, wherein, in each region corresponding to the first pixel and the second pixel, an optical lens having a circular shape in a plan view is arranged on the electrode on the side opposite to the photoelectric conversion layer.

[0567] This application claims priority from Japanese Patent Application JP2022-099008 filed with the Japan Patent Office on June 20, 2022, and the entire contents are incorporated herein by reference.

[0568] It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions may be made according to design requirements and other factors within the scope of the appended claims or the equivalents thereof.

Claims

1. A solid-state imaging device, comprising: a first electrode disposed to surround a portion of a periphery of the first pixel and supplied with a fixed voltage; a charge transport layer, which is provided at least in a region opposite to the first electrode and corresponding to the first pixel, and the charge transport layer transports charges; A photoelectric conversion layer, which is disposed on a side of the charge transport layer opposite to the first electrode, and the photoelectric conversion layer converts light into charges; an electrode disposed on a side of the photoelectric conversion layer opposite to the charge transport layer, the electrode supplying a voltage to the photoelectric conversion layer; a first accumulation electrode and a second accumulation electrode, which are provided at a distance from each other on a side of the charge transport layer opposite to the photoelectric conversion layer in a region corresponding to the first pixel, the first accumulation electrode and the second accumulation electrode respectively accumulating charges in the charge transport layer; and A first control electrode is provided between the first accumulation electrode and the second accumulation electrode, and the first control electrode transfers one of the charges accumulated by the first accumulation electrode and the charges accumulated by the second accumulation electrode.

2. The solid-state imaging device according to claim 1, wherein The first pixel is a phase difference detection pixel that detects a phase difference.

3. The solid-state imaging device according to claim 2, wherein: The first control electrode is supplied with a varying voltage.

4. The solid-state imaging device according to claim 2, wherein: The first control electrode is supplied with a fixed voltage.

5. The solid-state imaging device according to claim 1, wherein A floating diffusion that transfers accumulated charges is provided in the vicinity of each of the first accumulation electrode and the second accumulation electrode.

6. The solid-state imaging device according to claim 1, wherein The first accumulation electrode and the second accumulation electrode are disposed to be spaced apart from each other in a first direction.

7. The solid-state imaging device according to claim 6, wherein: The second pixel is arranged in a second direction relative to the first pixel, the second direction intersecting the first direction, and The second pixel comprises: the first electrode disposed to surround a portion of the periphery of the second pixel and supplied with a fixed voltage; The charge transport layer is disposed at least in a region opposite to the first electrode and corresponding to the second pixel, and the charge transport layer transports charges; The photoelectric conversion layer is disposed on a side of the charge transport layer opposite to the first electrode, and the photoelectric conversion layer converts light into charges; The electrode is disposed on a side of the photoelectric conversion layer opposite to the charge transport layer, and the electrode applies a voltage to the photoelectric conversion layer; a third accumulation electrode and a fourth accumulation electrode which are provided at a distance from each other on a side of the charge transport layer opposite to the photoelectric conversion layer in a region corresponding to the second pixel, the third accumulation electrode and the fourth accumulation electrode respectively accumulating charges in the charge transport layer, and A second control electrode is provided between the third accumulation electrode and the fourth accumulation electrode, and the second control circuit transfers one of the charges accumulated by the third accumulation electrode and the charges accumulated by the fourth accumulation electrode.

8. The solid-state imaging device according to claim 7, wherein: The second control electrode is formed integrally with the first control electrode.

9. The solid-state imaging device according to claim 7, wherein: A second electrode is provided between the floating diffusion and each of the first control electrode and the second control electrode, and the second electrode is supplied with a fixed voltage.

10. The solid-state imaging device according to claim 9, wherein The fixed voltage supplied to the second electrode is equal to the fixed voltage supplied to the first electrode.

11. The solid-state imaging device according to claim 5, wherein: Switching elements are provided between the first accumulation electrode and the floating diffusion and between the second accumulation electrode and the floating diffusion, respectively.

12. The solid-state imaging device according to claim 1, wherein The first accumulation electrode and the second accumulation electrode are arranged to be spaced apart from each other in a second direction, The second pixel is arranged in a first direction relative to the first pixel, the first direction intersects the second direction, and The second pixel comprises: the first electrode being arranged to surround a portion of the periphery of the second pixel and to supply a fixed voltage thereto; The charge transport layer is disposed at least in a region opposite to the first electrode and corresponding to the second pixel, and the charge transport layer transports charges; The photoelectric conversion layer is disposed on the side of the charge transport layer opposite to the first electrode, and the photoelectric conversion layer converts light into charges; The electrode is disposed on a side of the photoelectric conversion layer opposite to the charge transport layer, and the electrode supplies a voltage to the photoelectric conversion layer; a third accumulation electrode and a fourth accumulation electrode which are provided in a region corresponding to the second pixel on a side of the charge transport layer opposite to the photoelectric conversion layer and are spaced apart from each other along the second direction, the third accumulation electrode and the fourth accumulation electrode respectively accumulating charges in the charge transport layer; and A second control electrode is provided between the third accumulation electrode and the fourth accumulation electrode, and the second control electrode transfers one of the charges accumulated by the third accumulation electrode and the charges accumulated by the fourth accumulation electrode.

13. The solid-state imaging device according to claim 12, wherein: A floating diffusion that transfers accumulated charges is provided in the vicinity of each of the first accumulation electrode and the third accumulation electrode and in the vicinity of each of the second accumulation electrode and the fourth accumulation electrode.

14. The solid-state imaging device according to claim 9, wherein The first control electrode and the second control electrode are formed in the same conductive layer as each of the first accumulation electrode, the second accumulation electrode, the third accumulation electrode, and the fourth accumulation electrode.

15. The solid-state imaging device according to claim 9, wherein The first control electrode and the second control electrode are formed in a conductive layer different from each of the first accumulation electrode, the second accumulation electrode, the third accumulation electrode, and the fourth accumulation electrode.

16. The solid-state imaging device according to claim 7, wherein: A plurality of the first pixels and a plurality of the second pixels are arranged along the first direction and the second direction, respectively, and constitute a pixel area.

17. The solid-state imaging device according to claim 7, wherein: In each of the regions corresponding to the first pixel and the second pixel, an optical lens having a circular shape in a plan view is arranged on the electrode on a side opposite to the photoelectric conversion layer.

Images