Diamond growth method, system, MPCVD equipment and medium based on molybdenum support assembly

Abstract

The present application discloses a diamond growth method, system, MPCVD equipment and medium based on a molybdenum support assembly, wherein the diamond growth method based on the molybdenum support assembly includes: after assembling a first molybdenum support, a second molybdenum support, a third molybdenum support and a molybdenum ring to form a molybdenum support assembly, placing a seed crystal on the third molybdenum support, wherein the first molybdenum support, the second molybdenum support and the molybdenum ring are placed on a substrate table of an MPCVD device; treating the growth environment of the seed crystal in the MPCVD device; heating the seed crystal to a diamond growth temperature for growth; after the seed crystal starts diamond growth for a preset time, treating the MPCVD device and taking out the diamond to obtain a target diamond. The present application can prevent the molybdenum ring from turning red due to excessively high temperature, uneven temperature distribution and easy collapse of polycrystalline diamond deposited on the molybdenum ring during the diamond growth process, thereby improving the stability of diamond growth and reducing the probability of impurities falling off the surface of single-crystal diamond.

Description

Technical Field

[0001] The present application relates to the field of diamond growth technology, and in particular to a diamond growth method, system, MPCVD equipment and medium based on a molybdenum support assembly. Background Art

[0002] Microwave Plasma Chemical Vapor Deposition (MPCVD) has become the mainstream method for growing diamonds. Diamond growth requires a certain temperature range. Too high or too low a temperature is not conducive to diamond growth. Diamonds grow in MPCVD equipment by placing diamond seed crystals on a molybdenum tray, which is placed on a substrate table.

[0003] However, the existing technical solutions will cause the molybdenum ring to turn red during the diamond growth process and the polycrystals on the molybdenum ring will easily crack, causing the MPCVD equipment to shut down abnormally. At the same time, it will cause the molybdenum support and the molybdenum ring to deform, which may easily cause sudden temperature changes during the diamond growth process, which is not conducive to a stable temperature environment for diamond growth.

[0004] Therefore, the prior art still needs to be improved and developed. Summary of the invention

[0005] The main purpose of the present application is to provide a diamond growth method, system, MPCVD equipment and medium based on a molybdenum support assembly, aiming to solve the problems in the prior art of diamond growth process, such as poor heat dissipation of the molybdenum ring, resulting in deformation of the molybdenum ring, excessive temperature of the molybdenum ring resulting in uneven overall temperature distribution, and easy cracking of polycrystalline diamonds on the molybdenum ring at high temperature, which affect the stable growth of diamond.

[0006] The first aspect of the embodiment of the present application provides a diamond growth method based on a molybdenum support assembly, and the diamond growth method based on the molybdenum support assembly is applied to the molybdenum support assembly, and the molybdenum support assembly includes a first molybdenum support, a second molybdenum support, a third molybdenum support and a molybdenum ring, the first molybdenum support is in a circular ring shape, the molybdenum ring is sleeved in a circular groove of the first molybdenum support, the second molybdenum support and the third molybdenum support are respectively sleeved in the molybdenum ring, and the third molybdenum support is located on the second molybdenum support; the diamond growth method based on the molybdenum support assembly includes: performing diamond growth on the first molybdenum support, the second molybdenum support, the third molybdenum support and the molybdenum ring After the molybdenum support assembly is assembled, the seed crystal is placed on the third molybdenum support, wherein the first molybdenum support, the second molybdenum support and the molybdenum ring are placed on the substrate stage of the MPCVD device; the growth environment of the seed crystal in the MPCVD device is processed; the seed crystal is heated to the diamond growth temperature for growth, wherein during the growth of the seed crystal, the heat of the molybdenum ring is directly transferred to the substrate stage for heat dissipation; after the seed crystal starts to grow diamond for a preset time, the MPCVD device is processed and the diamond is taken out to obtain the target diamond.

[0007] Optionally, in one embodiment of the present application, the lower surface of the third molybdenum support is provided with a circular pattern structure, and the outer wall of the molybdenum ring is inclined so that the upper surface thickness of the molybdenum ring is less than the lower surface thickness; the first molybdenum support, the second molybdenum support, the third molybdenum support and the molybdenum ring are assembled to form the molybdenum support assembly, specifically including: placing the molybdenum ring in the circular groove of the first molybdenum support so that the inner wall of the molybdenum ring is perpendicular to the first molybdenum support; placing the first molybdenum support with the molybdenum ring built in on a substrate table; placing the second molybdenum support in the molybdenum ring so that the second molybdenum support is located on the substrate table; placing the third molybdenum support in the molybdenum ring so that the third molybdenum support is located on the second molybdenum support through the circular pattern structure to form the molybdenum support assembly.

[0008] Optionally, in one embodiment of the present application, the processing of the growth environment of the seed crystal in the MPCVD device specifically includes: closing the cavity door of the MPCVD device to seal the MPCVD device; raising the substrate stage to a preset height, and using hydrogen to clean the cavity and gas path of the MPCVD device; starting a microwave source to ignite the hydrogen in the cavity.

[0009] Optionally, in one embodiment of the present application, the step of heating the seed crystal to a diamond growth temperature for growth specifically includes: heating the seed crystal until the diamond growth temperature is reached; etching the seed crystal, and introducing methane into the cavity to start the diamond growth process.

[0010] Optionally, in one embodiment of the present application, after the diamond growth of the seed crystal starts for a preset time, the diamond is taken out after the MPCVD device is processed to obtain the target diamond, which specifically includes: after the diamond growth of the seed crystal starts for a preset time, the MPCVD device is cooled down; the MPCVD device is vacuum-broken, and the diamond on the third molybdenum support is taken out for processing to obtain the target diamond.

[0011] Optionally, in one embodiment of the present application, the breaking vacuum treatment of the MPCVD equipment and removing the diamonds on the third platinum support to obtain the target diamond specifically includes: breaking the vacuum treatment of the MPCVD equipment and removing the diamonds on the third platinum support to obtain an initial round of diamonds; taking out the third platinum support, replacing the third platinum support according to the growth state of the initial round of diamonds, and placing the initial round of diamonds on the replaced third platinum support to continue growing to obtain the target diamond; wherein the thickness of the replaced third platinum support is less than the thickness of the third platinum support.

[0012] Optionally, in one embodiment of the present application, the third platinum holder is replaced according to the growth state of the initial round of diamonds, and the initial round of diamonds is placed on the replaced third platinum holder to continue growing to obtain a target diamond, specifically including: determining a replaced third platinum holder according to the growth state of the initial round of diamonds, and placing the replaced third platinum holder in the molybdenum ring; placing the initial round of diamonds on the replaced third platinum holder so that the height difference between the initial round of diamonds and the surface of the molybdenum ring is within a preset range; heating the initial round of diamonds to the diamond growth temperature to continue growing, taking out the diamond after processing the MPCVD equipment, and obtaining the target diamond.

[0013] The second aspect of the embodiment of the present application further provides a diamond growth system based on a molybdenum support assembly, wherein the diamond growth system based on the molybdenum support assembly comprises:

[0014] A molybdenum support assembly module, used for placing a seed crystal on the third molybdenum support after assembling a first molybdenum support, a second molybdenum support, a third molybdenum support and a molybdenum ring to form a molybdenum support assembly, wherein the first molybdenum support, the second molybdenum support and the molybdenum ring are placed on a substrate stage of an MPCVD device;

[0015] An equipment preparation pretreatment module, used to treat the growth environment of the seed crystal in the MPCVD equipment;

[0016] A seed crystal temperature increasing growth module, used for increasing the temperature of the seed crystal to a diamond growth temperature for growth, wherein during the seed crystal growth process, the heat of the molybdenum ring is directly transferred to the substrate stage for heat dissipation;

[0017] The cooling and taking-out module is used to take out the diamond after processing the MPCVD equipment after the seed crystal starts to grow diamond for a preset time, so as to obtain the target diamond.

[0018] The third aspect of an embodiment of the present application also provides an MPCVD device, wherein the MPCVD device includes: a memory, a processor, and a diamond growth program based on a molybdenum support assembly stored in the memory and executable on the processor, wherein the diamond growth program based on the molybdenum support assembly implements the steps of the diamond growth method based on the molybdenum support assembly as described above when executed by the processor.

[0019] The fourth aspect of an embodiment of the present application also provides a computer-readable storage medium, wherein the computer-readable storage medium stores a diamond growth program based on a molybdenum support assembly, and when the diamond growth program based on the molybdenum support assembly is executed by a processor, the steps of the diamond growth method based on the molybdenum support assembly as described above are implemented.

[0020] Beneficial effects: The present application provides a diamond growth method, system, MPCVD equipment and medium based on a molybdenum tray assembly. The present application places a seed crystal in the third molybdenum tray of the molybdenum tray assembly and heats the diamond to grow. During the diamond growth process, the heat of the molybdenum ring is directly transferred to the substrate table for heat dissipation, thereby improving the heat dissipation capacity and being able to effectively reduce the heat of the molybdenum ring, thereby preventing the molybdenum ring from turning red due to excessive temperature during the diamond growth process, uneven temperature distribution and easy cracking of polycrystalline diamonds deposited on the molybdenum ring, thereby improving the stability of diamond growth and reducing the probability of impurities falling from the surface of single-crystal diamonds. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0022] Figure 1 This is a cross-sectional view of the assembled molybdenum support assembly in a preferred embodiment of the diamond growth method based on the molybdenum support assembly of the present application;

[0023] Figure 2 A three-dimensional diagram of a first molybdenum tray in a preferred embodiment of a diamond growth method based on a molybdenum tray assembly of the present application;

[0024] Figure 3 A three-dimensional diagram of a second molybdenum tray in a preferred embodiment of the diamond growth method based on a molybdenum tray assembly of the present application;

[0025] Figure 4 A three-dimensional diagram of a third molybdenum tray in a preferred embodiment of the diamond growth method based on a molybdenum tray assembly of the present application;

[0026] Figure 5 A stereogram of a molybdenum ring in a preferred embodiment of the diamond growth method based on a molybdenum support assembly of the present application;

[0027] Figure 6 A cross-sectional view of a molybdenum ring in a preferred embodiment of the diamond growth method based on a molybdenum support assembly of the present application;

[0028] Figure 7 It is a flow chart of a preferred embodiment of the diamond growth method based on the molybdenum support assembly of the present application;

[0029] Figure 8 It is a structural diagram of a preferred embodiment of the diamond growth system based on the molybdenum support assembly of the present application;

[0030] Fig. 9 This is a structural diagram of a preferred embodiment of the MPCVD equipment of the present application.

[0031] Description of reference numerals:

[0032] 11. first molybdenum support; 111. circular groove; 12. second molybdenum support; 13. third molybdenum support; 131. circular pattern structure; 14. molybdenum ring;

[0033] 100. Molybdenum support assembly module; 200. Equipment preparation and pretreatment module; 300. Seed crystal heating and growth module; 400. Cooling and removal module.

[0034] The above drawings have shown clear embodiments of the present application, which will be described in more detail later. These drawings and text descriptions are not intended to limit the scope of the present application in any way, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0035] In order to make the purpose, technical scheme and effect of the present application clearer and more specific, the technical scheme in the embodiments of the present application will be described clearly and completely in combination with the drawings in the embodiments of the present application. The described embodiments are only possible technical implementations of the present application, not all possible implementations. Based on the embodiments in the present application, those skilled in the art can completely combine the embodiments of the present application to obtain other embodiments without creative work, and these embodiments are also within the scope of protection of the present application.

[0036] In the related art, the redness of the molybdenum ring during the growth of diamond is caused by excessively high temperature. The molybdenum ring is located below the plasma, and the plasma temperature is relatively high. The polycrystals on the molybdenum ring are prone to cracking because the polycrystals will be deposited on the molybdenum ring. When the temperature is too high, the molybdenum ring will deform and the polycrystal will crack from the molybdenum ring (it should be noted that this application is for single-crystal diamond, and polycrystalline diamond is a by-product, which is an impurity relative to single-crystal diamond). The deformation of the molybdenum support and the molybdenum ring is caused by high temperature, which causes a sudden temperature change during the growth of diamond, because when the temperature in the cavity rises, the heat cannot be dissipated in time.

[0037] First, the terms involved in the embodiments of the present invention are introduced:

[0038] Diamond seed crystals are the starting material in the process of artificial diamond growth. They provide the basic surface for diamond growth. The seed crystals are placed in the reaction chamber of the MPCVD equipment, usually fixed on a molybdenum support or a similar material support to maintain stability during the growth process.

[0039] MPCVD equipment is a device that uses microwave plasma chemical vapor deposition technology to prepare diamond and other materials. The working principle of this equipment is to generate microwaves through a microwave source. Under the action of the microwave field, the reaction gas is excited into a plasma state, a spherical plasma is formed on the substrate and heated to a certain temperature to deposit a diamond film. It can be understood that the gas path of the MPCVD equipment includes a process air intake pipeline system, a cavity, and an exhaust pipeline system.

[0040] The following will be combined with the attached Figure 1-Figure 6 , the molybdenum support assembly of the embodiment of the present application is introduced.

[0041] In a possible embodiment, Figure 1 As shown, the molybdenum support assembly includes a first molybdenum support 11, a second molybdenum support 12, a third molybdenum support 13 and a molybdenum ring 14. The first molybdenum support 11 is in a circular ring shape. The molybdenum ring 14 is sleeved in a circular groove 111 of the first molybdenum support 11. The second molybdenum support 12 and the third molybdenum support 13 are respectively sleeved in the molybdenum ring 14, and the third molybdenum support 13 is located on the second molybdenum support 12. The first molybdenum support 11, the second molybdenum support 12 and the molybdenum ring 14 are placed on the substrate stage of the MPCVD equipment.

[0042] In a possible embodiment, a circular pattern structure 131 is provided on the lower surface of the third molybdenum support 13, and an outer wall of the molybdenum ring 14 is inclined, so that the thickness of the upper surface of the molybdenum ring 14 is smaller than the thickness of the lower surface.

[0043] Specifically, in the embodiments of the present application, Figure 1 and Figure 2As shown, the first molybdenum support 11 in the molybdenum support assembly is annular, and the molybdenum ring 14 can be placed in the hollowed-out portion of the first molybdenum support 11 (i.e., the circular groove 111), and the first molybdenum support 11 is placed on the substrate table; Figure 1 and Figure 3 As shown, the second molybdenum support 12 is located inside the molybdenum ring 14 and is placed on the substrate stage; Figure 1 and Figure 4 As shown, the third molybdenum support 13 is located above the second molybdenum support 12 and within the molybdenum ring 14, wherein the thickness of the third molybdenum support 13 is not unique, because the seed crystal is placed on the third molybdenum support 13 for growth, and in order to optimize the growth of the seed crystal, a certain height difference with the surface of the molybdenum ring 14 is required (the height difference is that the surface of the seed crystal is lower than the upper surface of the molybdenum ring 14, the seed crystal will grow thicker and thicker, and a thinner third molybdenum support 13 can be placed after a period of growth); Figure 1 , Figure 5 and Figure 6 As shown, the inner wall of the molybdenum ring 14 is perpendicular to the first molybdenum support 11, and the outer wall of the molybdenum ring 14 and the first molybdenum support 11 have an angle α, showing that the thickness of the lower surface of the molybdenum ring 14 is greater than the thickness of the upper surface. The angle is set to allow the lower surface of the molybdenum ring 14 to have more contact area with the substrate stage, which is convenient for better heat dissipation. In addition, the upper surface of the molybdenum ring 14 is chamfered to prevent too much energy from accumulating at the tip and to prevent the tip from overheating. The molybdenum ring 14 is thin on the top and thick on the bottom for better heat dissipation. The lower surface of the molybdenum ring 14 is in direct contact with the substrate stage, directly skipping the first molybdenum support 11 for heat dissipation, that is, the heat of the molybdenum ring 14 can be directly transferred to the substrate stage, and the first molybdenum support 11 is not needed as a heat dissipation medium. As shown in FIG. Figure 4 As shown, the lower surface of the third molybdenum support 13 has a circular pattern structure 131 to facilitate heat dissipation.

[0044] It is understandable that in order to keep a certain distance between the seed crystal and the molybdenum ring 14, the second molybdenum support 12 and the third molybdenum support 13 can be replaced with molybdenum supports of different thicknesses.

[0045] It should be noted that in the prior art, the molybdenum support is not hollowed out, and the molybdenum support is directly placed on the substrate stage, and the molybdenum ring 14 is placed on the molybdenum support, which is equivalent to adding a heat dissipation medium between the molybdenum ring 14 and the substrate stage, and the heat cannot be dissipated in time. However, the present application places the molybdenum ring 14 on the first molybdenum support 11 with a circular groove 111, so that the molybdenum ring 14 is in direct contact with the substrate stage, thereby achieving the purpose of timely heat dissipation.

[0046] Further, if Figure 6 As shown, the angle α between the outer wall of the molybdenum ring 14 and the first molybdenum support 11 ranges from 2° to 10°, including 2° and 10°. In the embodiment of the present application, the angle α is 6°.

[0047] The following describes the diamond growth method, system, MPCVD equipment and medium based on the molybdenum support assembly of the embodiment of the present application with reference to the accompanying drawings. In view of the problem that the diamond growth process in the above-mentioned related art is affected by the deformation of the molybdenum ring due to the poor heat dissipation of the molybdenum ring, the uneven overall temperature distribution caused by the high temperature of the molybdenum ring, and the easy collapse of the polycrystalline diamond on the molybdenum ring at high temperature, etc., which affects the stable growth of diamond, the present application provides a diamond growth method based on the molybdenum support assembly, in which the seed crystal is placed in the third molybdenum support of the molybdenum support assembly and the temperature is raised for diamond growth. During the diamond growth process, the heat of the molybdenum ring is directly transferred to the substrate table for heat dissipation, which improves the heat dissipation capacity and can effectively reduce the heat of the molybdenum ring, thereby preventing the molybdenum ring from turning red due to excessive temperature during the diamond growth process, uneven temperature distribution and easy collapse of the polycrystalline diamond deposited on the molybdenum ring, improving the stability of diamond growth and reducing the probability of impurities falling on the surface of the single crystal diamond. Thus, the technical problem that the molybdenum ring turns red and the polycrystalline on the molybdenum ring easily collapses due to excessive temperature in the diamond growth process in the related art is solved.

[0048] The technical solution of the present application is described in detail with specific embodiments below. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments.

[0049] The diamond growth method based on the molybdenum support assembly described in the preferred embodiment of the present application is as follows: Figure 7 As shown, the diamond growth method based on the molybdenum support assembly comprises the following steps:

[0050] In step S101, after the first molybdenum support, the second molybdenum support, the third molybdenum support and the molybdenum ring are assembled to form the molybdenum support assembly, the seed crystal is placed on the third molybdenum support, wherein the first molybdenum support, the second molybdenum support and the molybdenum ring are placed on the substrate table of the MPCVD equipment.

[0051] In a possible implementation, the molybdenum ring is placed in the circular groove of the first molybdenum support so that the inner wall of the molybdenum ring is perpendicular to the first molybdenum support; the first molybdenum support with the built-in molybdenum ring is placed on the substrate table; the second molybdenum support is placed in the molybdenum ring so that the second molybdenum support is located on the substrate table; the third molybdenum support is placed in the molybdenum ring so that the third molybdenum support is located on the second molybdenum support through the circular pattern structure to form the molybdenum support assembly.

[0052] Specifically, prepare the first molybdenum holder, the second molybdenum holder, the third molybdenum holder and the molybdenum ring, place the molybdenum ring in the hollow (circular groove) of the first molybdenum holder, and ensure that the inner wall of the molybdenum ring is perpendicular to the first molybdenum holder; place the first molybdenum holder (with the molybdenum ring) on ​​the substrate stage; place the second molybdenum holder inside the molybdenum ring, and ensure that it is firmly located on the substrate stage; place the third molybdenum holder on top of the second molybdenum holder and inside the molybdenum ring, and pay attention to the thickness of the third molybdenum holder to meet the needs of diamond growth; place the diamond seed crystal on the third molybdenum holder, and ensure that the seed crystal is correctly and firmly positioned. Only after the molybdenum holder assembly and the diamond seed crystal are ready, can the equipment be assembled.

[0053] The present application can improve the heat dissipation capacity, thereby solving the problems of the reddening of the molybdenum ring during the diamond growth process, the easy cracking of the polycrystals on the molybdenum ring leading to abnormal shutdown, the deformation of the molybdenum support and the molybdenum ring, and sudden temperature changes. The present application can make the overall temperature of the diamond growth more uniform and stable.

[0054] In step S102, the growth environment of the seed crystal in the MPCVD equipment is processed.

[0055] In one possible implementation, the cavity door of the MPCVD device is closed to seal the MPCVD device; the substrate stage is raised to a preset height, and the cavity and gas path of the MPCVD device are cleaned with hydrogen; and a microwave source is started to ignite the hydrogen in the cavity.

[0056] Specifically, place the molybdenum support assembly (including diamond seed crystal) on the substrate stage of the MPCVD equipment, close the chamber door of the MPCVD equipment, and seal it; raise the substrate stage to a predetermined height, use H2 to clean the chamber and gas system to remove impurities and residual gas; turn on the microwave source, and perform ignition treatment on the H2 in the chamber to form a stable plasma. The ignition treatment is the prerequisite for heating, and the heating treatment is the basis for etching and growth. The etching treatment can remove defects and impurities on the surface of the diamond seed crystal, providing a good starting point for the growth of diamond. The growth process is carried out on the basis of the etching treatment.

[0057] In step S103, the seed crystal is heated to a diamond growth temperature for growth, wherein during the seed crystal growth process, the heat of the molybdenum ring is directly transferred to the substrate stage for heat dissipation.

[0058] In a possible implementation, the seed crystal is heated until it reaches a diamond growth temperature; the seed crystal is etched, and methane is introduced into the cavity to start the diamond growth process.

[0059] Specifically, the diamond seed crystal is heated until it reaches a temperature suitable for diamond growth; the diamond seed crystal is etched to remove surface defects and impurities; after etching, the carbon source gas methane is introduced to start the diamond growth process. Cooling treatment is a prerequisite for removing diamonds. Only by ensuring that the diamond is cooled at a suitable temperature can it be avoided from being affected by thermal stress.

[0060] In step S104, after the seed crystal starts to grow diamond for a preset time, the MPCVD device is processed and the diamond is taken out to obtain the target diamond.

[0061] In a possible implementation, after the seed crystal starts to grow diamond for a preset time, the MPCVD device is cooled down; the MPCVD device is vacuum-broken, and the diamond on the third molybdenum support is removed and processed to obtain the target diamond.

[0062] Specifically, after the diamond has grown for a predetermined time, the microwave source is turned off and the equipment is cooled down; after the cooling is completed, the vacuum is broken and the diamond is taken out, and the taken out diamond is cut, polished and other subsequent processes are performed on it to remove associated impurities and obtain the target diamond.

[0063] In another possible implementation, after the seed crystal starts to grow diamonds for a preset time, the MPCVD equipment is cooled; the MPCVD equipment is vacuum-broken, and the diamonds on the third platinum support are removed to obtain an initial round of diamonds; the third platinum support is removed, and the third platinum support is replaced according to the growth state of the initial round of diamonds, and the initial round of diamonds is placed on the replaced third platinum support to continue growing to obtain a target diamond; wherein the thickness of the replaced third platinum support is less than the thickness of the third platinum support.

[0064] In another possible implementation, the third molybdenum holder to be replaced is determined according to the growth state of the initial round of diamonds, and the replaced third molybdenum holder is placed in the molybdenum ring; the initial round of diamonds is placed on the replaced third molybdenum holder so that the height difference between the initial round of diamonds and the surface of the molybdenum ring is within a preset range; the initial round of diamonds is heated to the diamond growth temperature for continued growth, and the diamonds are taken out after processing the MPCVD equipment to obtain the target diamond.

[0065] Specifically, after the diamond grows to a predetermined time, the microwave source is turned off and the equipment is cooled down; after the cooling is completed, the vacuum is broken and the diamond is taken out, and the taken out diamond is cut, polished and other subsequent treatments are performed to remove the associated impurities to obtain the initial round of diamonds. According to the diamond growth situation, it is replaced with a thinner third molybdenum holder, and the above steps are repeated to grow the next round of diamonds. Subsequent treatment is to perform necessary treatment on the taken out diamond to remove impurities, and the replacement of the third molybdenum holder is to ensure the height difference requirements for the next round of diamond growth. The repeated operation is the cycle of the entire diamond growth process.

[0066] The diamond growth method based on the molybdenum support assembly of the present application is further described below through specific embodiments:

[0067] The method for growing diamond using the aforementioned molybdenum support assembly is to place the diamond seed crystal on the molybdenum support assembly, specifically on the third molybdenum support, and place the molybdenum support assembly on the substrate stage in the MPCVD device. Close the cavity door and seal the cavity. Raise the substrate stage to a predetermined height, and then use H2 to clean the cavity and the gas path system. After the cleaning is completed, turn on the microwave source to ignite the H2 in the cavity, and then heat the diamond seed crystal to reach a suitable temperature for the growth of the diamond seed crystal, and etch the diamond. After the etching is completed, introduce the carbon source gas methane. The diamond seed crystal begins to grow. After the diamond grows to a predetermined time, the equipment is cooled and the vacuum is broken, and then the diamond is taken out. The diamond needs to be taken out for cutting, grinding and polishing (in order to remove the associated impurities of the single crystal diamond, such as polycrystalline and graphite). After completing the above operations, the third molybdenum support in the molybdenum support assembly needs to be replaced with a thinner molybdenum support. This is because the thickness of the diamond increases after a period of growth. In order to ensure the height difference between the diamond surface and the molybdenum ring surface, it needs to be replaced with a thinner molybdenum support. Then continue to repeat the previous operations. During the growth of diamond, the heat of the molybdenum ring can be directly transferred to the substrate stage without passing through the molybdenum support, thereby effectively reducing the heat of the molybdenum ring.

[0068] Next, a diamond growth system based on a molybdenum support assembly according to an embodiment of the present application will be described with reference to the accompanying drawings.

[0069] Figure 8 It is a structural diagram of a diamond growth system based on a molybdenum support assembly according to an embodiment of the present application.

[0070] like Figure 8 As shown, the diamond growth system based on the molybdenum support assembly includes: a molybdenum support assembly module 100, an equipment preparation and pretreatment module 200, a seed crystal temperature rising growth module 300 and a cooling and removal module 400.

[0071] Specifically, the molybdenum support assembly module 100 is used to place the seed crystal on the third molybdenum support after the first molybdenum support, the second molybdenum support, the third molybdenum support and the molybdenum ring are assembled to form a molybdenum support assembly, wherein the first molybdenum support, the second molybdenum support and the molybdenum ring are placed on the substrate stage of the MPCVD device;

[0072] An equipment preparation pre-processing module 200 is used to process the growth environment of the seed crystal in the MPCVD equipment;

[0073] A seed crystal temperature increasing growth module 300 is used to increase the temperature of the seed crystal to a diamond growth temperature for growth, wherein during the seed crystal growth process, the heat of the molybdenum ring is directly transferred to the substrate stage for heat dissipation;

[0074] The cooling and taking-out module 400 is used to take out the diamond after the seed crystal starts to grow diamond for a preset time, and obtain the target diamond after processing the MPCVD equipment.

[0075] Fig. 9 This is a structural diagram of the MPCVD device provided in the embodiment of the present application. The MPCVD device may include:

[0076] A memory 501 , a processor 502 , and a computer program stored in the memory 501 and executable on the processor 502 .

[0077] When the processor 502 executes the program, the diamond growth method based on the molybdenum support assembly provided in the above embodiment is implemented.

[0078] Furthermore, the MPCVD device further comprises:

[0079] The communication interface 503 is used for communication between the memory 501 and the processor 502 .

[0080] The memory 501 is used to store computer programs that can be executed on the processor 502 .

[0081] The memory 501 may include a high-speed RAM memory, and may also include a non-volatile memory (non-volatile memory), such as at least one disk memory.

[0082] If the memory 501, the processor 502 and the communication interface 503 are implemented independently, the communication interface 503, the memory 501 and the processor 502 can be connected to each other through a bus and communicate with each other. The bus can be an Industry Standard Architecture (ISA) bus, a Peripheral Component (PCI) bus or an Extended Industry Standard Architecture (EIS) bus. The bus can be divided into an address bus, a data bus, a control bus, etc. For ease of representation, Fig. 9 Only one thick line is used in the diagram, but this does not mean that there is only one bus or only one type of bus.

[0083] Optionally, in a specific implementation, if the memory 501, the processor 502 and the communication interface 503 are integrated on a chip, the memory 501, the processor 502 and the communication interface 503 can communicate with each other through an internal interface.

[0084] The processor 502 may be a central processing unit (CPU), or an application specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of the present application.

[0085] This embodiment also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the above-mentioned diamond growth method based on a molybdenum support assembly.

[0086] One embodiment of the present application provides a computer program product, including a computer program, which, when executed by a processor, implements the present application Figure 7 Any of the corresponding embodiments provides a diamond growth method based on a molybdenum support assembly.

[0087] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or N embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0088] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, "N" means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0089] Any process or method description in a flowchart or otherwise described herein may be understood to represent a module, fragment or portion of code comprising one or N executable instructions for implementing the steps of a custom logical function or process, and the scope of the preferred embodiments of the present application includes alternative implementations in which functions may not be performed in the order shown or discussed, including performing functions in a substantially simultaneous manner or in reverse order depending on the functions involved, which should be understood by technicians in the technical field to which the embodiments of the present application belong.

[0090] The logic and / or steps represented in the flowchart or otherwise described herein, for example, can be considered as an ordered list of executable instructions for implementing logical functions, and can be embodied in any computer-readable storage medium for use by an instruction execution system, device or apparatus (such as a computer-based system, a system including a processor, or other system that can fetch instructions from an instruction execution system, device or apparatus and execute instructions), or in combination with these instruction execution systems, devices or apparatuses. For the purposes of this specification, a "computer-readable storage medium" can be any device that can contain, store, communicate, propagate or transmit a program for use by an instruction execution system, device or apparatus, or in combination with these instruction execution systems, devices or apparatuses. More specific examples (non-exhaustive list) of computer-readable storage media include the following: an electrical connection with one or N wirings (electronic device), a portable computer disk box (magnetic device), a random access memory (RAM), a read-only memory (ROM), an erasable and programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disk read-only memory (CDROM). In addition, the computer-readable storage medium may even be paper or other suitable medium on which the program is printed, since the program can be obtained electronically by optically scanning the paper or other medium and then editing, interpreting or processing in other suitable ways as necessary, and then storing it in a computer memory.

[0091] It should be understood that the various parts of the present application can be implemented by hardware, software, firmware or a combination thereof. In the above embodiment, N steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented by hardware, as in another embodiment, it can be implemented by any one of the following technologies known in the art or their combination: a discrete logic circuit having a logic gate circuit for implementing a logic function for a data signal, a dedicated integrated circuit having a suitable combination of logic gate circuits, a programmable gate array (PGA), a field programmable gate array (FPGA), etc.

[0092] A person skilled in the art may understand that all or part of the steps in the method for implementing the above-mentioned embodiment may be completed by instructing related hardware through a program, and the program may be stored in a computer-readable storage medium, which, when executed, includes one or a combination of the steps of the method embodiment.

[0093] In addition, each functional unit in each embodiment of the present application may be integrated into a processing module, or each unit may exist physically separately, or two or more units may be integrated into one module. The above-mentioned integrated module may be implemented in the form of hardware or in the form of a software functional module. If the integrated module is implemented in the form of a software functional module and sold or used as an independent product, it may also be stored in a computer-readable storage medium.

[0094] The storage medium mentioned above may be a read-only memory, a magnetic disk or an optical disk, etc. Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limiting the present application. A person of ordinary skill in the art may change, modify, replace and modify the above embodiments within the scope of the present application.

[0095] It should be understood that the application of the present application is not limited to the above examples. For ordinary technicians in this field, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to this application.

[0096] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A diamond growth method based on a molybdenum support assembly, characterized in that: The diamond growth method based on the molybdenum support assembly is applied to the molybdenum support assembly, the molybdenum support assembly includes a first molybdenum support, a second molybdenum support, a third molybdenum support and a molybdenum ring, the first molybdenum support is in a circular ring shape, the molybdenum ring is sleeved in a circular groove of the first molybdenum support, the second molybdenum support and the third molybdenum support are respectively sleeved in the molybdenum ring, and the third molybdenum support is located on the second molybdenum support; The diamond growth method based on the molybdenum support assembly comprises: After the first molybdenum support, the second molybdenum support, the third molybdenum support and the molybdenum ring are assembled to form the molybdenum support assembly, placing the seed crystal on the third molybdenum support, wherein the first molybdenum support, the second molybdenum support and the molybdenum ring are placed on the substrate stage of the MPCVD device; Processing the growth environment of the seed crystal in the MPCVD device; The seed crystal is heated to a diamond growth temperature for growth, wherein during the growth of the seed crystal, the heat of the molybdenum ring is directly transferred to the substrate stage for heat dissipation; After the seed crystal starts to grow diamond for a preset time, the MPCVD device is processed and the diamond is taken out to obtain the target diamond; The lower surface of the third molybdenum support is provided with a circular pattern structure, and the outer wall of the molybdenum ring is inclined so that the thickness of the upper surface of the molybdenum ring is smaller than the thickness of the lower surface; The first molybdenum support, the second molybdenum support, the third molybdenum support and the molybdenum ring are assembled to form the molybdenum support assembly, specifically comprising: Placing the molybdenum ring in the circular groove of the first molybdenum support so that the inner wall of the molybdenum ring is perpendicular to the first molybdenum support; Placing the first molybdenum support with the molybdenum ring built in it on the substrate table; Placing the second molybdenum support in the molybdenum ring so that the second molybdenum support is located on the substrate stage; The third molybdenum support is placed in the molybdenum ring so that the third molybdenum support is located on the second molybdenum support through the circular pattern structure to form the molybdenum support assembly.

2. The diamond growth method based on the molybdenum support assembly according to claim 1, characterized in that: The processing of the growth environment of the seed crystal in the MPCVD device specifically includes: Closing the chamber door of the MPCVD device to seal the MPCVD device; Raise the substrate stage to a preset height, and use hydrogen to clean the cavity and gas path of the MPCVD equipment; The microwave source is started to perform ignition treatment on the hydrogen in the cavity.

3. The diamond growth method based on the molybdenum support assembly according to claim 2, characterized in that: The step of heating the seed crystal to a diamond growth temperature for growth specifically includes: The seed crystal is heated until it reaches the diamond growth temperature; The seed crystal is etched, and methane is introduced into the cavity to start the diamond growth process.

4. The diamond growth method based on the molybdenum support assembly according to claim 1, characterized in that: After the seed crystal starts to grow diamond for a preset time, the MPCVD device is processed to take out the diamond to obtain the target diamond, which specifically includes: After the seed crystal starts diamond growth for a preset time, cooling the MPCVD device; The MPCVD equipment is subjected to vacuum breaking treatment, and the diamond on the third molybdenum support is taken out for treatment to obtain the target diamond.

5. The diamond growth method based on the molybdenum support assembly according to claim 4, characterized in that: The vacuum breaking process of the MPCVD device and taking out the diamond on the third molybdenum support to obtain the target diamond specifically includes: Performing vacuum breaking treatment on the MPCVD device, taking out the diamonds on the third molybdenum support, and obtaining an initial wheel of diamonds; The third molybdenum holder is taken out, and the third molybdenum holder is replaced according to the growth state of the initial round of diamonds, and the initial round of diamonds is placed on the replaced third molybdenum holder to continue growing, so as to obtain the target diamond; Wherein, the thickness of the replaced third molybdenum support is smaller than the thickness of the third molybdenum support.

6. The diamond growth method based on the molybdenum support assembly according to claim 5, characterized in that: The step of replacing the third molybdenum holder according to the growth state of the initial round of diamonds, and placing the initial round of diamonds on the replaced third molybdenum holder to continue growing to obtain the target diamonds specifically includes: According to the growth state of the initial round of diamond, determine the third molybdenum holder to be replaced, and place the third molybdenum holder to be replaced in the molybdenum ring; Placing the initial wheel diamond on the replaced third molybdenum holder so that the height difference between the initial wheel diamond and the surface of the molybdenum ring is within a preset range; The initial round of diamonds is heated to the diamond growth temperature to continue growing, and the diamonds are taken out after processing the MPCVD equipment to obtain the target diamonds.

7. A diamond growth system based on a molybdenum support assembly based on the diamond growth method based on a molybdenum support assembly according to any one of claims 1 to 6, characterized in that: The diamond growth system based on the molybdenum support assembly includes: A molybdenum support assembly module, used for placing a seed crystal on the third molybdenum support after assembling a first molybdenum support, a second molybdenum support, a third molybdenum support and a molybdenum ring to form a molybdenum support assembly, wherein the first molybdenum support, the second molybdenum support and the molybdenum ring are placed on a substrate stage of an MPCVD device; An equipment preparation pretreatment module, used to treat the growth environment of the seed crystal in the MPCVD equipment; A seed crystal temperature increasing growth module, used for increasing the temperature of the seed crystal to a diamond growth temperature for growth, wherein during the seed crystal growth process, the heat of the molybdenum ring is directly transferred to the substrate stage for heat dissipation; The cooling and taking-out module is used to take out the diamond after the seed crystal starts to grow diamond for a preset time, and obtain the target diamond after processing the MPCVD equipment.

8. An MPCVD device, characterized in that: The MPCVD equipment includes: a memory, a processor, and a diamond growth program based on a molybdenum support assembly stored in the memory and executable on the processor. When the diamond growth program based on the molybdenum support assembly is executed by the processor, the steps of the diamond growth method based on the molybdenum support assembly as described in any one of claims 1 to 6 are implemented.

9. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a diamond growth program based on a molybdenum support assembly, and when the diamond growth program based on the molybdenum support assembly is executed by a processor, the steps of the diamond growth method based on the molybdenum support assembly as described in any one of claims 1-6 are implemented.

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