Microdefect detection method and device

Abstract

The invention provides a microdefect detection method and device, and the method comprises the steps: carrying out the excitation of the surface of a to-be-detected material, so as to enable electrons in the to-be-detected material to be excited from a valence band to a conduction band; detecting the electron energy dissipation process of the conduction band; and according to the detected electron energy dissipation process, determining defect areas of the to-be-detected material and the defect concentration of each defect area. Based on the high sensitivity of electron energy dissipation life to defects, high-precision, high-sensitivity and high-speed detection of ultra-low-concentration microdefects on the surface of the material is realized, and the method has important significance in reducing the manufacturing output of defective products and improving the performance limit of the products.

Description

Technical Field

[0001] The present invention relates to the technical field of micro defect detection, and in particular to a micro defect detection method and device. Background Art

[0002] During the manufacturing and service of high-end equipment, friction on the moving interface will inevitably produce microscopic defects, which may affect the excellent performance at the least, or shorten the life of the equipment and make it invalid at the worst, resulting in huge energy dissipation and economic losses. For example, aviation radial tires are easily affected by process and equipment factors during the molding process to form a variety of microscopic defects, resulting in uneven force and easy wear during the service of the tire, and serious accidents such as rupture, delamination, and tire blowout. High-end chips are prone to defects in each process of thin film, lithography, etching, and doping, resulting in a decrease in chip yield and internal current leakage, which directly limits the computing efficiency and service life of electronic devices. Therefore, it is of great significance to detect microscopic defects on the surface interface of equipment with high precision, high sensitivity, and high speed, and to promptly discover and analyze problems in the manufacturing process, in order to reduce the manufacturing output of defective products and improve the performance limit of high-end equipment.

[0003] In view of the high requirements of high-end equipment manufacturing industry for the detection of microscopic defects on the surface of materials, the common microscopic defect detection methods currently include ultrasonic testing, optical testing, machine vision testing, transmission electron microscopy testing, etc., but they all have limitations. The defect detection results of ultrasonic testing are not intuitive, and it is difficult to detect microscopic defects below the micron size. It is technically difficult and relies on experienced inspectors; optical testing and machine vision testing are limited by the optical diffraction limit, with limited resolution, and machine vision testing requires more samples for training to achieve high precision; the electron beam during transmission electron microscopy testing will generate new defects during the detection process, and the sample preparation requirements are harsh, the detection cost is high, and the speed is low.

[0004] Therefore, existing defect detection technologies cannot simultaneously meet the needs of high-precision, high-sensitivity, and high-speed micro-defect detection. Summary of the invention

[0005] The present invention provides a micro defect detection method and device to solve the shortcomings of the prior art, such as high detection cost, low speed and limitation on defect size, and realize high-precision, high-sensitivity and high-speed detection of ultra-low concentration micro defects on the surface of materials.

[0006] The present invention provides a micro defect detection method, comprising the following steps: Exciting the surface of the material to be detected so that electrons in the material to be detected are excited from the valence band to the conduction band; detecting the electron energy dissipation process of the conduction band; According to the detected electron energy dissipation process, the defect area of ​​the material to be detected and the defect concentration of each defect area are determined.

[0007] According to the micro defect detection method provided by the present invention, the step of exciting the surface of the material to be detected specifically includes: Ultrafast lasers are used to emit pump light and probe light; The pump light is used to excite the surface of the material to be detected, so as to excite electrons in the material to be detected from the valence band to the conduction band.

[0008] According to the micro defect detection method provided by the present invention, the wavelength range of the pump light is 340-800 nanometers.

[0009] According to the micro defect detection method provided by the present invention, the step of detecting the electron energy dissipation process of the conduction band specifically includes: Resonance is formed between the detection light and the excitons at the bottom of the conduction band; Monitoring the change of the intensity of the detection light, wherein the change of the intensity of the detection light is caused by the pump light, and the change of the intensity of the detection light is proportional to the electron density in the conduction band; Determine, according to the monitoring result, a curve of the intensity of the detection light changing over time; The curve of the variation of the light intensity of the detection light with time is determined as the electron energy dissipation decay curve in the conduction band.

[0010] According to the micro defect detection method provided by the present invention, the wavelength range of the detection light is 500-1600 nanometers.

[0011] According to the micro defect detection method provided by the present invention, the change of the light intensity of the detection light is monitored by using transient absorption ultrafast spectroscopy technology with a time resolution of 200 fs.

[0012] According to the micro defect detection method provided by the present invention, the step of determining the defect area of ​​the material to be detected and the defect concentration of each defect area according to the detected electron energy dissipation process specifically includes: The electron energy dissipation decay curve in the conduction band is fitted with a double exponential function to obtain the electron energy dissipation decay function: ; Among them, A 2 When it is zero or infinitely close to zero, it means that the detection area is a defect-free area. 1 and τ 1 It represents the intensity and lifetime of the electron energy dissipation component in the defect-free region; A 2When it is greater than zero, it means that the detection area is a defect area. 1 and τ 1 represents the intensity and lifetime of the first electron energy dissipation component in the defect region, A 2 and τ 2 represents the intensity and lifetime of the second electron energy dissipation component in the defect region; According to the electron energy dissipation decay function A 1 , τ 1 , A 2 , τ 2 The defect area of ​​the material to be detected and the defect concentration of each defect area are determined by taking the value of .

[0013] The present invention also provides a micro defect detection device, comprising the following modules: An excitation module, used for exciting the surface of the material to be detected, so that the electrons in the material to be detected are excited from the valence band to the conduction band; A detection module, used for detecting the electron energy dissipation process of the conduction band; The defect determination module is used to determine the defect area of ​​the material to be detected and the defect concentration of each defect area according to the detected electron energy dissipation process.

[0014] The present invention also provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the computer program, any of the above-described micro defect detection methods is implemented.

[0015] The present invention also provides a non-transitory computer-readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the micro defect detection method as described in any one of the above is implemented.

[0016] The present invention also provides a computer program product, comprising a computer program, wherein when the computer program is executed by a processor, the micro defect detection method as described above is implemented.

[0017] The present invention provides a method and device for detecting microscopic defects, which excite the surface of a material to be detected so that electrons in the material to be detected are excited from a valence band to a conduction band; the electron energy dissipation process of the conduction band is detected; based on the detected electron energy dissipation process, the defect area of ​​the material to be detected and the defect concentration of each defect area are determined; and ultra-low concentration microscopic defect detection is achieved by utilizing the high sensitivity of the electron energy dissipation lifetime to defects and detecting the ultrafast dynamic process of electron capture by defect energy levels. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0019] Figure 1 It is a schematic flow chart of the micro defect detection method provided by the present invention.

[0020] Figure 2 It is a schematic diagram of the principle of micro defect detection based on electron energy dissipation lifetime provided by the present invention.

[0021] Figure 3 The single-layer WS provided by the present invention 2 Comparison of atomic force topography before and after probe friction.

[0022] Figure 4 The single-layer WS provided by the present invention 2 Raman spectra of regions with different defect concentrations.

[0023] Figure 5 The single-layer WS provided by the present invention 2 Photoluminescence (PL) spectra of regions with different defect concentrations.

[0024] Figure 6 The single-layer WS provided by the present invention 2 Low-temperature PL spectra of the original area and the defect area after probe sliding friction.

[0025] Figure 7 The single-layer WS provided by the present invention 2 Electron energy dissipation lifetime diagram for different defect concentration regions.

[0026] Figure 8 This is a comparison chart of the lower limit capabilities of microscopic defect detection of several defect detection methods provided by the present invention.

[0027] Fig. 9 It is a schematic structural diagram of the micro defect detection device provided by the present invention.

[0028] Fig.10 It is a structural schematic diagram of the electronic device provided by the present invention. DETAILED DESCRIPTION

[0029] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0030] The present invention is described in detail below in conjunction with the accompanying drawings of the specification. The specific operating method in the method embodiment can also be applied to the device embodiment or the system embodiment. In the description of the present invention, unless otherwise specified, "at least one" includes one or more. "Multiple" refers to two or more. For example, at least one of A, B and C includes: A exists alone, B exists alone, A and B exist at the same time, A and C exist at the same time, B and C exist at the same time, and A, B and C exist at the same time. In the present invention, " / " means or, for example, A / B can mean A or B; "and / or" in this article is only a kind of association relationship that describes the associated objects, indicating that there can be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone.

[0031] In real applications, microscopic defects are inevitably generated during the manufacturing and use of equipment due to friction on the moving interface, which may affect the excellent performance at the least, or shorten the life of the equipment and make it fail, resulting in huge energy dissipation and economic losses. For example, during the molding process of aviation radial tires, it is easy to be affected by process and equipment factors to form a variety of microscopic defects, resulting in uneven force and easy wear during the use of the tire, resulting in serious accidents such as rupture, delamination, and tire blowout; or high-end chips are very easy to introduce defects in each process of film, lithography, etching, and doping, resulting in a decrease in chip yield and internal current leakage, directly limiting the computing efficiency and service life of electronic devices. Therefore, it is of great significance to detect microscopic defects on the surface interface of equipment with high precision, high sensitivity, and high speed, and to timely discover and analyze problems in the manufacturing process, which is of great significance to reducing the manufacturing output of defective products and improving the performance limit of equipment.

[0032] At present, common micro defect detection methods include ultrasonic detection, optical detection, machine vision detection, transmission electron microscope detection, etc., but all of them have limitations. Among them, ultrasonic detection has high sensitivity and low cost, but the defect detection results are not intuitive, it is difficult to detect micro defects below the micron size, and the technology is difficult and relies on experienced inspectors; optical detection and machine vision detection are fast, but they are limited by the optical diffraction limit, the resolution is limited, and machine vision detection requires more samples for training to achieve high precision; transmission electron microscope detection has high accuracy, but the electron beam will generate new defects during the detection process, and the sample preparation requirements are harsh, the detection cost is high, and the speed is low. Therefore, the existing defect detection technology cannot simultaneously meet the needs of high-precision, high-sensitivity, and high-speed micro defect detection.

[0033] In view of this, an embodiment of the present invention provides a method and device for detecting microscopic defects. Based on the high sensitivity of electron energy dissipation lifetime to defects, femtosecond transient absorption spectroscopy technology is used to achieve high-precision, high-sensitivity, and high-speed detection of microscopic defects on the surface of materials, clarify the mechanism of how defect energy levels capture electrons to increase energy dissipation, and provide guidance for suppressing the generation of material interface defects.

[0034] The present invention will be described in detail below in conjunction with specific implementation modes.

[0035] In some specific embodiments of the present invention, Figure 1 As shown, the present invention provides a micro defect detection method, comprising: Step 100, exciting the surface of the material to be detected so that electrons in the material to be detected are excited from the valence band to the conduction band; Step 200, detecting the electron energy dissipation process of the conduction band; Step 300: Determine defect regions of the material to be inspected and defect concentrations of each defect region according to the detected electron energy dissipation process.

[0036] It should be noted that the existing defect detection solutions do not display intuitive defect detection results, and it is difficult to detect microscopic defects below the micron size. In addition, the technology is difficult, the detection cost is high, and the speed is low. It cannot simultaneously meet the needs of high-precision, high-sensitivity, and high-speed microscopic defect detection.

[0037] Therefore, based on the high sensitivity of electron energy dissipation lifetime to defects, the present invention detects the electron energy dissipation process and determines the defect area and defect concentration according to the detected electron energy dissipation process.

[0038] Specifically, a single layer of tungsten disulfide (WS 2 ) as an example, such as Figure 2 As shown, Figure 2The microscopic defect detection principle diagram based on electron energy dissipation lifetime provided by the present invention is shown in FIG. 2 ), whose energy band structure presents a direct band gap. In the embodiment of the present invention, an atomic force microscope probe is used to detect the 2 The surface friction slides, thus generating defects in the sample and introducing defect energy levels. This energy level will capture the excited electrons at the bottom of the conduction band, forming defect bound excitons and generating new dissipation channels. This process is highly sensitive to the defect concentration. The more defects are generated, the more electrons are captured by this energy level, resulting in faster friction energy dissipation, that is, a shorter electron energy dissipation lifetime.

[0039] It is worth noting that the microscopic defect detection method provided in the embodiment of the present invention is applicable to any material to be detected that needs to detect defects quickly, and is not limited to the single-layer tungsten disulfide (WS) provided in this embodiment. 2 ). For different materials to be detected, the micro defect detection method provided by the embodiment of the present invention has the same detection mechanism. Therefore, the embodiment of the present invention does not specifically limit the material to be detected.

[0040] To further compare the micro defect detection method provided by the embodiment of the present invention with the traditional defect detection method, as shown in FIG. Figure 3 As shown, Figure 3 The single-layer WS provided by the present invention 2 Atomic force topography comparison before and after probe friction. Specifically, high-quality single-layer WS was obtained by mechanical exfoliation from bulk crystals. 2 , and dry-transferred it to SiO 2 / Si substrate to eliminate the interference of substrate roughness, impurities and other factors on the intrinsic properties of the sample. The atomic force microscope probe was slid on the sample surface after applying different loads (100 nN, 500 nN, 1000 nN, 1500 nN, 2000 nN, 2500 nN, 3000 nN) to introduce micro defects of different concentrations. By observing the morphology before and after the probe friction, it was found that no obvious defects were observed inside the friction area, indicating that the atomic force microscope has poor detection ability for micro defects introduced by friction.

[0041] Figure 4 The single-layer WS provided by the present invention 2 Raman spectra of different defect concentration areas, such as Figure 4 As shown, defects will change the single-layer WS 2 In order to obtain the lattice structure changes caused by friction-induced defects, the Raman spectra of different defect concentration regions were measured using a 532 nm laser. In the lower defect concentration region with an applied load below 2000 nN, the A 1g The mode appears at about 417 cm-1 , and can be well fitted by a single-peak Lorentz curve. However, in the higher defect concentration region at loads of 2500 nN and 3000 nN, A 1g There is a shoulder peak in the mode. This is because the defect destroys the symmetry of the monolayer sample structure. The shoulder peak at about 411 cm -1 The Raman characteristic peak at is attributed to the defect peak D mode. This result confirms that the probe sliding introduces defects into the sample, and the Raman spectroscopy technique can distinguish the higher defect concentration area above the load of 2500 nN.

[0042] Specifically, Figure 5 The single-layer WS provided by the present invention 2 Photoluminescence (PL) spectra of different defect concentration regions, such as Figure 5 As shown in Figure 2, defects can also lead to changes in the band structure. Using a 532 nm laser to excite the sample, it was found that the neutral A exciton PL peak appeared at 2.05 eV in both the original sample and the defective sample, corresponding to the monolayer WS 2 Direct band gap at the K point in the Brillouin zone. In the low defect concentration region with a load of less than 1000 nN, the peak intensity of A excitons remains basically unchanged. When the load is greater than 1000 nN, the peak intensity of A excitons gradually decreases with the increase of load. This is because the defects generated by friction introduce defect energy levels, which capture excited electrons at the bottom of the sample conduction band, making fewer excited electrons form A excitons to undergo radiative recombination (corresponding to Figure 2 The process in (1) causes the A exciton peak intensity to decrease with the increase of defect concentration. This result proves that the friction sliding of probes with different loads introduces different micro defect concentrations in the sample, and the micro defect detection capability of PL spectroscopy is higher than that of Raman spectroscopy.

[0043] In order to further clarify the defects caused by single-layer WS 2 The band structure changes, the sample is excited by 473 nm laser at 77 K, and the low-temperature PL spectrum results of the original area and defect area are obtained, such as Figure 6 As shown, Figure 6 The single-layer WS provided by the present invention 2 Low-temperature PL spectra of the original area and the defect area after the probe friction sliding. In addition to the neutral A exciton PL peak at 2.05 eV in the original area and the defect area, a new PL emission peak appears at 1.75 eV in the defect area. This PL peak originates from the defect energy level generated by the friction-induced defect, which captures electrons (such as Figure 2 Then defect-bound excitons are formed, corresponding to Figure 2 The process in ③.

[0044] In some possible embodiments of the present invention, the step of exciting the surface of the material to be detected specifically includes: Ultrafast lasers are used to emit pump light and probe light; The pump light is used to excite the surface of the material to be detected, so as to excite electrons in the material to be detected from the valence band to the conduction band.

[0045] Specifically, this embodiment provides an implementation method for exciting the surface of a material to be detected, where a laser emits pump light to excite the surface of the material, thereby exciting electrons in the material from the valence band to the conduction band.

[0046] In a possible embodiment, the wavelength of the pump light is in the range of 340-800 nanometers.

[0047] Specifically, for different materials to be detected, the wavelengths of the pump light and the detection light emitted by the ultrafast laser are also different.

[0048] For the single layer tungsten disulfide (WS 2 ) material, and the laser emitted by the laser uses a pump light of 2.82 electron volts and a wavelength of 440 nanometers.

[0049] Specifically, to avoid nonlinear optical phenomena during electron excitation, a 2.82 eV (440 nm) pump light with a power of 2 uJ / cm -2 The power of WS 2 The electrons in.

[0050] In some possible implementations of the present invention, the step of detecting the electron energy dissipation process of the conduction band specifically includes: Resonance is formed between the detection light and the excitons at the bottom of the conduction band; Monitoring the change of the intensity of the detection light, wherein the change of the intensity of the detection light is caused by the pump light, and the change of the intensity of the detection light is proportional to the electron density in the conduction band; Determine, according to the monitoring result, a curve of the intensity of the detection light changing over time; The curve of the variation of the light intensity of the detection light with time is determined as the electron energy dissipation decay curve in the conduction band.

[0051] Specifically, this embodiment provides an implementation method for detecting the electron energy dissipation process of the conduction band, by resonating the detection light with the excitons at the bottom of the conduction band, and determining the curve of the electron density change over time based on the monitoring result of the change in the light intensity of the detection light caused by the pump light.

[0052] In some possible implementations of the present invention, the wavelength range of the detection light is 500-1600 nanometers.

[0053] Specifically, the detection light used in the embodiment of the present invention is selected to be 1.98 eV (625 nm), which is similar to WS 2 A exciton resonance is used to track WS 2 The process of electron energy dissipation at the bottom of the conduction band.

[0054] In some possible implementations of the present invention, the change in the intensity of the detection light is monitored using transient absorption ultrafast spectroscopy technology with a time resolution of 200 fs.

[0055] In a possible embodiment, in order to further improve the detection capability of microscopic defects, a process of capturing electrons at a defect energy level that is more sensitive to defect concentration is selected, corresponding to Figure 2 The process ② in the figure occurs at an ultrafast time scale of picoseconds. Therefore, the embodiment of the present invention uses a femtosecond transient absorption microscope to detect the ultrafast process of defect-captured electrons. The femtosecond transient absorption microscope has a time resolution of 200 fs. A pump light of 2.82 eV (440 nm) is used at 2 uJ / cm -2 The power of WS 2 The probe light is selected to be 1.98 eV (625 nm), which is similar to WS 2 A exciton resonance is used to track WS 2 The electron energy dissipation process at the bottom of the conduction band. The reflection of the probe light caused by the pump light Δ R ( x, y, t ) changes with WS 2 The electron density at the bottom of the conduction band n ( x, y, t ) is proportional to.

[0056] In some possible implementations of the present invention, the step of determining the defect area of ​​the material to be detected and the defect concentration of each defect area according to the detected electron energy dissipation process specifically includes: The electron energy dissipation decay curve in the conduction band is fitted with a double exponential function to obtain the electron energy dissipation decay function:

[0057] Among them, A 2 When it is zero or infinitely close to zero, it means that the detection area is a defect-free area. 1 and τ 1 It represents the intensity and lifetime of the electron energy dissipation component in the defect-free region; A 2When it is greater than zero, it means that the detection area is a defect area. 1 and τ 1 represents the intensity and lifetime of the first electron energy dissipation component in the defect region, A 2 and τ 2 represents the intensity and lifetime of the second electron energy dissipation component in the defect region; According to the electron energy dissipation decay function A 1 , τ 1 , A 2 , τ 2 The defect area of ​​the material to be detected and the defect concentration of each defect area are determined by taking the value of .

[0058] Specifically, Figure 7 The single-layer WS provided by the present invention 2 The electron energy dissipation lifetime diagram in different defect concentration regions is given by Figure 7 It can be observed that as the friction load increases from 100 nN to 3000 nN, that is, as the defect concentration increases, the electron energy dissipation decay rate gradually accelerates. Among them, the electron energy dissipation lifetime decay curve in the original area is well fitted by a single exponential function, and the lifetime τ 1 = 85.46 ps, which is attributed to the radiative recombination of neutral A excitons. For the defect area, the electron energy dissipation decay curve is fitted using a double exponential function: (1)

[0059] in A i and τ i It is i As the defect concentration increases, the long-life component τ 1 There is little change around 85 ps, but its proportion continues to decrease from 100% in the original area. In the defect area, a fast electron energy dissipation decay component is observed. τ 2 , which is attributed to the ultrafast process of electron capture by defect levels. As the load increases from 100 nN to 3000 nN, the proportion of this component gradually increases, indicating that the concentration of defects is proportional to the number of captured electrons.

[0060] Using the formula The average electron energy dissipation lifetime was calculated, and it was found that with the increase of defect concentration, the average electron energy dissipation lifetime was shortened from 85 ps of the initial sample to 53 ps. Microscopic defects are generated during the probe friction process, which introduce defect energy levels and thus capture electrons. This process provides a new electron energy dissipation channel, which shortens the average electron energy dissipation lifetime. Therefore, the high sensitivity of the electron energy dissipation lifetime to defects can be used to detect low-concentration microscopic defects on the surface of materials with high precision, high sensitivity, and high speed.

[0061] Based on the above embodiments, Figure 8 This is a comparison chart of the lower limit capabilities of microscopic defect detection of several defect detection methods provided by the present invention. Figure 8 The micro defect detection lower limit capabilities of atomic force microscopy (AFM), Raman spectroscopy, photoluminescence (PL) spectroscopy and transient absorption (TA) spectroscopy were demonstrated. It can be seen that based on the high sensitivity of electron energy dissipation lifetime to defects, compared with traditional tribological detection methods and commonly used spectroscopy methods, transient absorption spectroscopy can detect ultra-low concentration micro defects generated under loads as low as 100 nN, while the detection lower limits of AFM, Raman and PL technologies are 3000 nN, 2500 nN and 1000 nN respectively.

[0062] The present invention uses femtosecond transient absorption spectroscopy to successfully detect sample materials such as monolayer tungsten disulfide (WS 2 ) in a monolayer of WS. 2 The surface slides with different loads to introduce microscopic defects of different concentrations. The ultrafast dynamic process of electrons under the action of defects is efficiently detected using femtosecond transient absorption spectroscopy technology, with a time resolution of 200 fs. 2 The transient absorption spectrum of the material was found to increase the concentration of microscopic defects and the lifetime of electron energy dissipation as the applied load increased. Furthermore, the mechanism of the defect energy level capturing electrons and thus increasing energy dissipation was clarified. The technology proposed in this project can detect low-concentration microscopic defects on the surface of materials with high precision, high sensitivity and high speed.

[0063] It is worth noting that the embodiment of the present invention adopts WS 2 As a test sample, WS 2Transition metal sulfides such as WS have excellent lubrication, electrical, optical, and mechanical properties and are widely used in solid lubricating materials, semiconductor devices, wearable devices, and other fields. However, the micro defect detection method provided by the embodiment of the present invention is based on the high sensitivity of the electron energy dissipation lifetime to defects. The ultrafast dynamic process of the defect energy level capturing electrons is observed using femtosecond transient absorption spectroscopy technology, and the ultra-low concentration micro defect detection is achieved. It can be applied to various materials with micro defect detection requirements, not limited to WS. 2 The embodiment of the present invention does not specifically limit the type of material used.

[0064] The micro defect detection device provided by the present invention is described below. The micro defect detection device described below and the micro defect detection method described above can be referenced to each other.

[0065] In some specific embodiments of the present invention, a microscopic defect detection device is provided. Fig. 9 : is a schematic diagram of the structure of the micro defect detection device provided by the present invention, the device comprises: An excitation module 91 is used to excite the surface of the material to be detected so that the electrons in the material to be detected are excited from the valence band to the conduction band; A detection module 92, used for detecting the electron energy dissipation process of the conduction band; The defect determination module 93 is used to determine the defect area of ​​the material to be inspected and the defect concentration of each defect area according to the detected electron energy dissipation process.

[0066] The implementation principle and beneficial effects of the micro defect detection device provided in the embodiment of the present invention are similar to the implementation principle and beneficial effects of the micro defect detection method shown in the above embodiment. Please refer to the implementation principle and beneficial effects of the micro defect detection method shown in the above embodiment, and no further details will be given here.

[0067] Fig.10 An example of a physical structure diagram of an electronic device is shown in FIG. Fig.10As shown, the electronic device may include: a processor 1010, a communication interface 1020, a memory 1030 and a communication bus 1040, wherein the processor 1010, the communication interface 1020 and the memory 1030 communicate with each other through the communication bus 1040. The processor 1010 may call the logic instructions in the memory 1030 to execute the micro defect detection method, which includes: exciting the surface of the material to be detected so that the electrons in the material to be detected are excited from the valence band to the conduction band; detecting the electron energy dissipation process of the conduction band; and determining the defect area of ​​the material to be detected and the defect concentration of each defect area according to the detected electron energy dissipation process.

[0068] In addition, the logic instructions in the above-mentioned memory 1030 can be implemented in the form of a software functional unit and can be stored in a computer-readable storage medium when it is sold or used as an independent product. Based on such an understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art or the part of the technical solution, can be embodied in the form of a software product, and the computer software product is stored in a storage medium, including several instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk, etc. Various media that can store program codes.

[0069] On the other hand, the present invention also provides a computer program product, which includes a computer program. The computer program can be stored on a non-transitory computer-readable storage medium. When the computer program is executed by a processor, the computer can execute the micro-defect detection method provided by the above-mentioned methods, which includes: exciting the surface of the material to be detected so that the electrons in the material to be detected are excited from the valence band to the conduction band; detecting the electron energy dissipation process of the conduction band; and determining the defect area of ​​the material to be detected and the defect concentration of each defect area based on the detected electron energy dissipation process.

[0070] On the other hand, the present invention also provides a non-transitory computer-readable storage medium having a computer program stored thereon. When the computer program is executed by a processor, it is implemented to execute the microscopic defect detection method provided by the above-mentioned methods, the method comprising: exciting the surface of the material to be detected so that the electrons in the material to be detected are excited from the valence band to the conduction band; detecting the electron energy dissipation process of the conduction band; and determining the defect area of ​​the material to be detected and the defect concentration of each defect area based on the detected electron energy dissipation process.

[0071] The device embodiments described above are merely illustrative, wherein the units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place, or they may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the scheme of this embodiment. Ordinary technicians in this field can understand and implement it without paying creative labor.

[0072] Through the description of the above implementation methods, those skilled in the art can clearly understand that each implementation method can be implemented by means of software plus a necessary general hardware platform, and of course, can also be implemented by hardware. Based on this understanding, the above technical solution is essentially or the part that contributes to the prior art can be embodied in the form of a software product, and the computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, a disk, an optical disk, etc., including a number of instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods described in each embodiment or some parts of the embodiments.

[0073] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A micro defect detection method, characterized in that: include: Exciting the surface of the material to be detected so that electrons in the material to be detected are excited from the valence band to the conduction band; detecting the electron energy dissipation process of the conduction band; According to the detected electron energy dissipation process, the defect area of ​​the material to be detected and the defect concentration of each defect area are determined.

2. The micro defect detection method according to claim 1, characterized in that: The steps of exciting the surface of the material to be detected specifically include: Ultrafast lasers are used to emit pump light and probe light; The pump light is used to excite the surface of the material to be detected, so as to excite electrons in the material to be detected from the valence band to the conduction band.

3. The micro defect detection method according to claim 2, characterized in that: The wavelength of the pump light is in the range of 340-800 nanometers.

4. The micro defect detection method according to claim 2 or 3, characterized in that: The step of detecting the electron energy dissipation process of the conduction band specifically comprises: Resonance is formed between the detection light and the excitons at the bottom of the conduction band; Monitoring the change of the intensity of the detection light, wherein the change of the intensity of the detection light is caused by the pump light, and the change of the intensity of the detection light is proportional to the electron density in the conduction band; Determine, according to the monitoring result, a curve of the intensity of the detection light changing over time; The curve of the variation of the light intensity of the detection light with time is determined as the electron energy dissipation decay curve in the conduction band.

5. The micro defect detection method according to claim 4, characterized in that: The wavelength range of the detection light is 500-1600 nanometers.

6. The micro defect detection method according to claim 5, characterized in that: The change of the intensity of the probe light is monitored using transient absorption ultrafast spectroscopy with a time resolution of 200 fs.

7. The micro defect detection method according to claim 6, characterized in that: The step of determining the defect area of ​​the material to be inspected and the defect concentration of each defect area according to the detected electron energy dissipation process specifically includes: The electron energy dissipation decay curve in the conduction band is fitted with a double exponential function to obtain the electron energy dissipation decay function: ； Among them, when A2 is zero or infinitely close to zero, it means that the detection area is a defect-free area, and A1 and τ1 represent the intensity and lifetime of the electron energy dissipation component in the defect-free area; When A2 is greater than zero, it indicates that the detection area is a defect area, A1 and τ1 represent the intensity and lifetime of the first electron energy dissipation component of the defect area, and A2 and τ2 represent the intensity and lifetime of the second electron energy dissipation component of the defect area; According to the values ​​of A1, τ1, A2, and τ2 in the electron energy dissipation attenuation function, the defect areas of the material to be detected and the defect concentrations of each of the defect areas are determined.

8. A micro defect detection device, characterized in that: include: An excitation module, used for exciting the surface of the material to be detected, so that the electrons in the material to be detected are excited from the valence band to the conduction band; A detection module, used for detecting the electron energy dissipation process of the conduction band; The defect determination module is used to determine the defect area of ​​the material to be detected and the defect concentration of each defect area according to the detected electron energy dissipation process.

9. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein: When the processor executes the computer program, the micro defect detection method according to any one of claims 1 to 7 is implemented.

10. A non-transitory computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the micro defect detection method according to any one of claims 1 to 7 is implemented.

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