A gas monitoring and regulating method and system for the curing process of a crystal component

Abstract

The present invention relates to the field of automatic control, and specifically to a gas monitoring and regulating method and system for the curing process of crystal components. By collecting temperature data and oxygen content data in the curing tunnel furnace in real time, temperature stability analysis and oxygen content trend analysis are carried out based on the temperature data and oxygen content data at multiple time points. When the temperature is unstable or the oxygen content rises to the warning line, the temperature and oxygen content in the curing tunnel furnace are automatically adjusted. Thus, it is possible to avoid a decrease in quality or scrapping of semi-finished quartz crystal components in a batch caused by the oxygen content rising to a relatively high level or abnormal temperature fluctuations. This application can improve the yield rate of crystal components during production and reduce production costs to improve product quality.

Description

Technical Field

[0001] The present invention relates to the field of automatic control, and specifically to a method and system for gas monitoring and regulation in the curing process of crystal components. Background Art

[0002] In the production process of crystal components, multiple processing procedures need to be performed on quartz wafers. For example, electroplating and dispensing are carried out on quartz wafers. After dispensing, the semi-finished quartz crystals need to be placed in a special tunnel furnace for curing.

[0003] In order to prevent the oxidation of the electroplated layer and the colloid during the curing process, it is necessary to keep the oxygen content inside the tunnel furnace at a low level and also keep the temperature stable. In the prior art, although the oxygen content and temperature inside the tunnel furnace are monitored in real time, due to the circulation of the internal gas, the oxygen content and temperature will change. Once the oxygen content rises to a high level or the temperature fluctuates abnormally, the quality of all semi-finished quartz crystals in the tunnel furnace will decline or be scrapped, resulting in an increase in production costs. Summary of the Invention

[0004] In view of this, the purpose of the present invention is to provide a method and system for gas monitoring and regulation in the curing process of crystal components to solve the problems in the background art.

[0005] To achieve the above purpose, the present invention adopts the following technical solutions:

[0006] A method for gas monitoring and regulation in the curing process of crystal components of the present invention includes the steps of:

[0007] Obtaining temperature data and oxygen content data at multiple time points in the current time period inside the curing tunnel furnace, where the current time period includes the current time point and a target number of time points before the current time point, the temperature data includes temperature values at multiple positions inside the curing tunnel furnace, and the oxygen content data includes oxygen content values at multiple positions inside the curing tunnel furnace;

[0008] Determining the temperature stability of the current time period based on the temperature data at the multiple time points, and determining the oxygen content trend of the current time period based on the oxygen content data at the multiple time points;

[0009] When the temperature in the current time period is unstable, adjusting the gas temperature inside the curing tunnel furnace based on a preset temperature adjustment unit; when there is an upward trend in the oxygen content in the current time period and the oxygen content at the current time point triggers a warning line, adjusting the oxygen content inside the tunnel furnace body based on a preset oxygen content adjustment unit.

[0010] In an embodiment of the present application, determining the temperature stability of the current time period based on the temperature data at the multiple time points includes:

[0011] Calculating the average value of the temperature data corresponding to each time point to obtain the average temperature of multiple time points , where represents the serial number of the time point;

[0012] Calculating the average temperature of each time point and the absolute value of the difference from the preset temperature reference value ; ;

[0013] Calculating the variance and the average value of the absolute values of the differences of multiple time points ;

[0014] When the variance is greater than the preset variance threshold, or the average value is greater than the preset average value threshold, it is determined that the temperature of the current time period is unstable.

[0015] In an embodiment of the present application, determining the oxygen content trend of the current time period based on the oxygen content data at the multiple time points includes:

[0016] Calculating the average value of the oxygen content data corresponding to each time point to obtain the average oxygen content of multiple time points;

[0017] Mapping the average oxygen content of multiple time points into a two-dimensional coordinate system, where the horizontal axis of the two-dimensional coordinate system is the time axis and the vertical axis of the two-dimensional coordinate system is the oxygen content data axis;

[0018] Sliding along the time axis based on a pre-constructed sliding window, and calculating the average value of all the average oxygen contents within the sliding window each time the window slides , where is the sliding serial number of the sliding window;

[0019] When any two adjacent average values satisfy , it is determined that there is an upward trend in the oxygen content in the current time period.

[0020] In an embodiment of the present application, adjusting the gas temperature inside the curing tunnel furnace based on a preset temperature adjustment unit includes:

[0021] S11, calculating the difference between the temperature value at the current time point and the preset temperature reference value ;

[0022] S12. Calculate the heat adjustment value inside the curing tunnel furnace based on the difference. , where , is the specific heat capacity of the inert protective gas in the curing tunnel furnace, is the mass of the inert protective gas in the curing tunnel furnace;

[0023] S13. Calculate the target temperature of the inert protective gas in the temperature adjustment unit based on the heat adjustment value , where , , where is the mass of the inert protective gas in the temperature adjustment unit;

[0024] S14. Based on the target temperature perform internal heat adjustment on the curing tunnel furnace and re-collect the temperature value at the target time point , where the target time point is the time point when the temperature values at multiple positions inside the curing tunnel furnace are the same;

[0025] S15. Calculate the difference between the temperature value at the target time point and the preset temperature reference value ; when , take the target time point as the current time point and return to step S11 until ; when , complete the adjustment of the gas temperature inside the curing tunnel furnace, where is the preset first temperature difference threshold. is the preset first temperature difference threshold.

[0026] In an embodiment of the present application, performing internal heat adjustment on the curing tunnel furnace based on the target temperature includes:

[0027] Calculate the absolute value of the difference between the target temperature and the preset temperature reference value ; ;

[0028] When , heat the inert gas in the temperature adjustment unit to the target temperature , open the exhaust end of the curing tunnel furnace, and inject the inert gas at the target temperature into the curing tunnel furnace to maintain the internal air pressure balance of the curing tunnel furnace and complete the temperature adjustment, where is the preset second temperature difference threshold;

[0029] At , split the difference to obtain or temperature difference adjustment values, where , or , is the last temperature difference adjustment value; based on or temperature difference adjustment values, calculate the temperature of the inert gas in the temperature adjustment unit, open the exhaust end of the curing tunnel furnace, and sequentially heat the temperature adjustment to the corresponding temperature and inject it into the curing tunnel furnace to maintain the internal air pressure balance of the curing tunnel furnace and complete the temperature adjustment.

[0030] In an embodiment of the present application, the oxygen content inside the curing tunnel furnace is adjusted based on a preset oxygen content adjustment unit, including:

[0031] S21, heat the temperature of the inert gas in the oxygen content adjustment unit to the temperature value at the current time point;

[0032] S22, open the exhaust end of the curing tunnel furnace, and inject the inert gas heated to the temperature value at the current time point into the curing tunnel furnace;

[0033] S23, update the current time point, and re-determine the oxygen content trend in the current time period based on the oxygen content data at multiple time points in the current time period;

[0034] S24, when the oxygen content in the current time period is still on the rising trend and the oxygen content at the current time point triggers the warning line, return to step S21 until the oxygen content in the current time period is not on the rising trend, or the oxygen content at the current time point is lower than the warning line;

[0035] S25, when the oxygen content in the current time period is not on the rising trend, or the oxygen content at the current time point is lower than the warning line, complete the oxygen content adjustment.

[0036] In an embodiment of the present application, when the gas temperature inside the curing tunnel furnace cannot be adjusted, an alarm message is sent to the target object.

[0037] In an embodiment of the present application, when the oxygen content adjustment cannot be completed, an alarm message is sent to the target object.

[0038] In an embodiment of the present application, the curing tunnel furnace is provided with an air inlet end and an exhaust end. The air inlet end of the curing tunnel furnace is connected to the output end of the temperature adjustment unit and the output end of the oxygen content adjustment unit. The input ends of the temperature adjustment unit and the oxygen content adjustment unit are both connected to an inert gas source;

[0039] Both the air inlet end and the exhaust end of the curing tunnel furnace are provided with electrically controlled valves.

[0040] The present application also provides a gas monitoring and adjustment system for the curing process of crystal components, including:

[0041] An acquisition module for acquiring temperature data and oxygen content data at multiple time points in the current time period inside the curing tunnel furnace. Among them, the current time period includes the current time point and a target number of time points before the current time point. The temperature data includes temperature values at multiple positions inside the curing tunnel furnace, and the oxygen content data includes oxygen content values at multiple positions inside the curing tunnel furnace;

[0042] A monitoring module for determining the temperature stability of the current time period based on the temperature data at the multiple time points, and determining the oxygen content trend of the current time period based on the oxygen content data at the multiple time points;

[0043] An adjustment module for adjusting the gas temperature inside the curing tunnel furnace based on a preset temperature adjustment unit when the temperature in the current time period is unstable; and adjusting the oxygen content inside the curing tunnel furnace based on a preset oxygen content adjustment unit when there is an upward trend in the oxygen content in the current time period and the oxygen content at the current time point triggers a warning line.

[0044] The beneficial effects of the present invention are as follows: A gas monitoring and adjustment method and system for the curing process of crystal components according to the present invention collect temperature data and oxygen content data inside the curing tunnel furnace in real time, and perform temperature stability analysis and oxygen content trend analysis based on the temperature data and oxygen content data at multiple time points. When the temperature is unstable or the oxygen content rises to the warning line, the temperature and oxygen content inside the curing tunnel furnace are automatically adjusted. Thus, it is possible to avoid the scrapping of a batch of quartz wafers caused by the oxygen content rising to a relatively high level or abnormal temperature fluctuations. The present application can improve the yield rate during the production of crystal oscillators and reduce production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] The present invention will be further described below in conjunction with the drawings and embodiments:

[0046] Figure 1 is a usage scenario diagram shown in an embodiment of the present application;

[0047] Figure 2 It is a flowchart of a gas monitoring and adjusting method for the curing process of a crystal component shown in an embodiment of the present application;

[0048] Figure 3 It is a structural diagram of a gas monitoring and adjusting system for the curing process of a crystal component shown in an embodiment of the present application;

[0049] The reference numerals are as follows: 110 - curing tunnel furnace, 120 - intake end, 130 - exhaust end, 140 - adjusting unit, 150 - inert gas source, 160 - electric control valve, 170 - temperature sensor, 180 - oxygen concentration sensor, 190 - control host. Detailed implementation manners

[0050] The following uses specific specific examples to illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that, without conflict, the following embodiments and the features in the embodiments can be combined with each other.

[0051] It should be noted that the drawings provided in the following embodiments only illustrate the basic concept of the present invention in a schematic manner. Therefore, only the layers related to the present invention are shown in the drawings, rather than being drawn according to the number, shape, and size of the layers in actual implementation. The type, quantity, and ratio of each layer in actual implementation can be arbitrarily changed, and the layer layout type may also be more complex.

[0052] In the following description, a large number of details are discussed to provide a more thorough explanation of the embodiments of the present invention. However, it is obvious to those skilled in the art that the embodiments of the present invention can be implemented without these specific details.

[0053] During the production process of crystal oscillators, a curing process is required. The main function of curing the quartz wafer is to ensure a stable connection between the quartz wafer and the external base or bracket, which is crucial for maintaining the performance of the quartz crystal resonator. The curing process usually involves using conductive adhesive to fix the quartz wafer on the base, which not only provides mechanical fixation but also achieves electrical connection.

[0054] The present application creates conditions with stable temperature, humidity, and low oxygen content through a tunnel furnace to cure the quartz wafer. In the present application, a circulation system is provided inside the tunnel furnace, and a fan is used to make the internal inert gas (such as nitrogen) flow, so as to make the temperature and oxygen content inside the tunnel furnace uniform.

[0055] Figure 1 is a usage scenario diagram shown in an embodiment of the present application. As Figure 1 shown, in the present application, the temperature and oxygen concentration in the curing tunnel furnace 110 are adjusted by setting the adjustment unit 140. The adjustment unit 140 serves as both a temperature adjustment unit and an oxygen concentration adjustment unit at the same time. A temperature control module and a heating module are provided inside the adjustment unit 140.

[0056] The curing tunnel furnace 110 is provided with an air inlet end 120 and an exhaust end 130. The air inlet end 120 of the curing tunnel furnace 110 is connected to the output end of the adjustment unit 140, and the input end of the adjustment unit 140 is connected to the inert gas source 150;

[0057] Electric control valves 160 are provided at both the air inlet end of the curing tunnel furnace 110 and the exhaust end of the curing tunnel furnace 110. Temperature sensors 170 and oxygen concentration sensors 180 are arranged at multiple positions inside the curing tunnel furnace 110. The electric control valves 160, temperature sensors 170, oxygen concentration sensors 180, and temperature control module are all connected to the control host 190. The control host 190 analyzes the temperature data and oxygen concentration data collected by the temperature sensors 170 and oxygen concentration sensors 180. Based on the analysis results, the electric control valves 160 and the temperature control module are controlled. Thus, temperature adjustment or oxygen concentration adjustment is performed. The specific implementation process is as follows.

[0058] Figure 2 is a flowchart of a gas monitoring and adjustment method for the curing process of a crystal component shown in an embodiment of the present application. As Figure 2 shown, a gas monitoring and adjustment method for the curing process of a crystal component in this embodiment may include the steps:

[0059] S210, obtaining temperature data and oxygen content data at multiple time points in the current time period inside the curing tunnel furnace, where the current time period includes the current time point and a target number of time points before the current time point, the temperature data includes temperature values at multiple positions inside the curing tunnel furnace, and the oxygen content data includes oxygen content values at multiple positions inside the curing tunnel furnace;

[0060] In the present application, the control host regularly collects the temperature values and oxygen content values at multiple positions inside the curing tunnel furnace, thereby obtaining temperature data and oxygen content data. Since the air inside the curing tunnel furnace circulates continuously, generally, the temperature values and oxygen content values at multiple positions inside the curing tunnel furnace are the same.

[0061] S220, determining the temperature stability of the current time period based on the temperature data at the multiple time points, and determining the oxygen content trend of the current time period based on the oxygen content data at the multiple time points;

[0062] In some cases, the temperature inside the curing tunnel furnace may fluctuate. For example, inaccurate control of heating elements (such as resistance wires, heating plates, etc.) may lead to temperature fluctuations. For example, improper parameter settings of the PID controller or aging of the heating elements may result in inaccurate temperature control. Changes in the external ambient temperature also affect the temperature inside the tunnel furnace. Especially in the case of poor heat insulation measures, fluctuations in the external temperature are more likely to be transmitted into the tunnel furnace, causing temperature changes. If the temperature control is improper, whether the temperature is too high or too low, it may lead to a series of problems, affecting the performance and quality of the final product. For example, too high a temperature will cause material damage, increased stress, frequency shift, etc., while too low a temperature will cause incomplete curing, insufficient bonding strength, stress concentration, etc. And unstable temperature will lead to uneven curing of quartz wafers, uneven stress distribution, decreased frequency stability, decreased electrical performance, and reduced long-term reliability.

[0063] During the process of curing the quartz wafer colloid, if there are problems with the sealing of the tunnel furnace, external air (with an oxygen content of about 21%) will enter the tunnel furnace, resulting in an increase in the internal oxygen content. In addition, in some cases, temperature changes affect the solubility and diffusion rate of gases. At high temperatures, the solubility of certain gases decreases, and they may escape from the solution or solid material and enter the gas phase, which may include oxygen. This will further lead to an increase in the oxygen content. If the oxygen content is too high, it may cause oxidation reactions, resulting in a decline in the performance of the conductive adhesive. In addition, an oxide layer will form on the material surface. The thermal expansion coefficient of this oxide layer is different from that of the raw material, resulting in an increase in thermal stress. Thermal stress may cause microcracks or deformation of the quartz wafer, affecting its mechanical strength and frequency stability. The formation of the oxide layer and the change in material properties may cause the resonance frequency of the quartz wafer to change, resulting in frequency drift. This will reduce the frequency stability of the quartz crystal resonator and make it unable to achieve the expected performance in precision applications. The formation of the oxide layer may cause a decrease in the conductive performance of the conductive adhesive, increase the contact resistance, and affect the reliability of the electrical connection.

[0064] In this application, the temperature stability of the current time period is analyzed based on the following process, including:

[0065] S2201, calculate the average value of the temperature data corresponding to each time point to obtain the temperature average values of multiple time points , where, represents the time point serial number;

[0066] S2202, calculate the absolute value of the difference between the temperature average value of each time point and the preset temperature reference value

[0067] ; It reflects the difference between the average temperature at each time point and the set value. Generally, PID control is used to maintain a stable constant in the curing tunnel furnace. Therefore the value of

[0068] S2203, calculate the absolute value of the difference at multiple time points of the variance and the average value ;

[0069] This application extracts the variance to reflect the stability of the temperature difference and extracts the average value to reflect the overall level of the temperature difference.

[0070] S2204, when the variance is greater than the preset variance threshold, or the average value is greater than the preset average value threshold, it is determined that the temperature in the current time period is unstable.

[0071] In order to ensure the constant temperature inside the curing tunnel furnace, when the temperature stability is poor or the temperature difference is large, this application uses the method of heat conversion to perform heat compensation on the inside of the curing tunnel furnace. By adopting this method in combination with the existing PID control, inert gases at different temperatures are injected from the outside, so as to realize the temperature maintenance by combining the inside and the outside.

[0072] In addition, the oxygen content analysis is different from the temperature analysis. Generally, the oxygen content cannot reach a relatively high level, which will cause an irreversible oxidation reaction of the quartz wafer. Therefore, this application uses trend analysis to find the rising trend of the oxygen content and intervenes in time to adjust before the oxygen content reaches a relatively high level. This application analyzes the oxygen content trend in the current time period based on the following process, including:

[0073] S2211, calculate the average value of the oxygen content data corresponding to each time point to obtain the average oxygen content at multiple time points;

[0074] S2212, map the average oxygen content at multiple time points into a two-dimensional coordinate system, where the horizontal axis of the two-dimensional coordinate system is the time axis and the vertical axis of the two-dimensional coordinate system is the oxygen content data axis;

[0075] S2213, slide along the time axis based on a pre-constructed sliding window, and calculate the average value of all the average oxygen contents within the sliding window each time it slides , where is the sliding serial number of the sliding window;

[0076] S2214. For any two adjacent average values that satisfy it is determined that there is an upward trend in the oxygen content during the current time period.

[0077] To avoid the influence of data changes at a single time point on the judgment of the overall trend, this application analyzes the change trend of the oxygen content by using a sliding window method. By calculating the average values of multiple time points within the sliding window, the average value reflects the oxygen content level of the corresponding time period of the sliding window. When making an increasing judgment on the overall levels of multiple time periods, it is thus determined whether there is an upward trend.

[0078] In addition, if it increases unidirectionally within a relatively low level, it will not affect the curing process. Therefore, the judgment and adjustment of this application include: (1) upward trend; (2) triggering the warning line. The warning line is lower than the relatively high level described above and is only used as a screening parameter.

[0079] S230. When the temperature during the current time period is unstable, the gas temperature inside the curing tunnel furnace is adjusted based on a preset temperature adjustment unit; when there is an upward trend in the oxygen content during the current time period and the oxygen content at the current time point triggers the warning line, the oxygen content inside the curing tunnel furnace is adjusted based on a preset oxygen content adjustment unit.

[0080] When it is found in the foregoing that the temperature is unstable or the oxygen content is abnormal, adjustment is carried out in the following manner.

[0081] Adjusting the gas temperature inside the curing tunnel furnace based on a preset temperature adjustment unit includes:

[0082] S11. Calculate the temperature value at the current time point and the difference from the preset temperature reference value ; ;

[0083] S12. Calculate the heat adjustment value inside the curing tunnel furnace based on the difference , where , is the specific heat capacity of the inert protective gas of the curing tunnel furnace, is the mass of the inert protective gas of the curing tunnel furnace;

[0084] is the temperature value at the current time point and the heat corresponding to the temperature difference from the preset temperature reference value . Since this application adjusts the temperature inside the tunnel furnace based on an external adjustment unit. Therefore, also needs to be converted into the adjustment unit.

[0085] S13. Calculate the target temperature of the inert protective gas in the temperature adjustment unit based on the heat adjustment value. Calculate the target temperature of the inert protective gas in the temperature adjustment unit. , , where is the mass of the inert protective gas in the temperature adjustment unit;

[0086] Convert the heat corresponding to the temperature difference to the temperature of the adjustment unit. is the heat required to heat the adjustment unit to the temperature reference value . On this basis of heat, increase the adjustment amount to obtain the adjusted heat . Then convert it to temperature in the adjustment unit to obtain the target temperature .

[0087] S14. Based on the target temperature Adjust the internal heat of the curing tunnel furnace and re-collect the temperature value at the target time point , where the target time point is the time point when the temperature values at multiple positions inside the curing tunnel furnace are the same;

[0088] In this application, since the volume of the adjustment unit is much smaller than that of the curing tunnel furnace, in order to compensate for heat, it may cause the temperature inside the adjustment unit to be too high or too low. If injected directly, it may cause a large change in the local temperature inside the curing tunnel furnace, which may damage the quartz wafer. Therefore, the following method is adopted in this application for direct adjustment:

[0089] S141. Calculate the absolute value of the difference between the target temperature and the preset temperature reference value ; ;

[0090] S142. When , heat the inert gas in the temperature adjustment unit to the target temperature , open the exhaust end of the curing tunnel furnace, and inject the inert gas at the target temperature into the curing tunnel furnace to maintain the internal air pressure balance of the curing tunnel furnace and complete the temperature adjustment, where is the preset second temperature difference threshold;

[0091] S143. When , split the difference to obtain or temperature difference adjustment values, where , or , is the last temperature difference adjustment value; based on or the temperature of the inert gas in the temperature adjustment unit is calculated, the exhaust end of the curing tunnel furnace is opened, and the temperature adjustment is successively heated to the corresponding temperature and then injected into the curing tunnel furnace to maintain the internal air pressure balance of the curing tunnel furnace and complete the temperature adjustment.

[0092] At , it means that the temperature difference between the temperature in the adjustment unit and the temperature in the curing tunnel furnace is large at this time. In order to avoid large local temperature changes caused by direct injection. In this application, the difference is split and the heat is calculated separately , , or , the corresponding temperature difference adjustment value is . Calculate the temperature difference adjustment values for multiple adjustments , and then adjust multiple times. After each adjustment, if the temperature inside the curing tunnel furnace is the same everywhere, it means that the gas mixing is complete, and then the next adjustment is carried out.

[0093] S15. Calculate the temperature value at the target time point and the difference from the preset temperature reference value ; at , take the target time point as the current time point and return to step S11 until ; at , complete the adjustment of the gas temperature inside the curing tunnel furnace, where is the preset first temperature difference threshold.

[0094] Finally, this application adopts a cyclic adjustment method. If the adjustment target is reached, the adjustment is stopped. If not, the adjustment is carried out again. Thus, the temperature inside the curing tunnel furnace is always close to the set value.

[0095] In an embodiment of this application, the oxygen content inside the curing tunnel furnace is adjusted based on a preset oxygen content adjustment unit, including:

[0096] S21. Heat the temperature of the inert gas in the oxygen content adjustment unit to the temperature value at the current time point;

[0097] S22. Open the exhaust end of the curing tunnel furnace and inject the inert gas heated to the temperature value at the current time point into the curing tunnel furnace;

[0098] S23. Update the current time point and re-determine the oxygen content trend in the current time period based on the oxygen content data of multiple time points in the current time period;

[0099] S24. When the oxygen content in the current time period is still on the rise and the oxygen content at the current time point triggers the warning line, return to step S21 until the oxygen content in the current time period is not on the rise or the oxygen content at the current time point is lower than the warning line.

[0100] S25. When the oxygen content in the current time period is not on the rise or the oxygen content at the current time point is lower than the warning line, the oxygen content adjustment is completed.

[0101] Since the purity of the inert gas in the inert gas source is generally fixed and only the reduction of the oxygen content needs to be considered during the adjustment process. Therefore, in this application, it is only necessary to heat the gas to the temperature value at the current time point. Then, continuously inject the heated inert gas in the adjustment unit into the curing tunnel furnace, and the oxygen content in the curing tunnel furnace can be effectively reduced.

[0102] During the above process, if continuous adjustment is performed for a period of time and the gas temperature inside the curing tunnel furnace cannot be adjusted all the time, an alarm message is sent to the target object. Or if the oxygen content adjustment cannot be completed all the time, an alarm message is sent to the target object. Thus, relevant personnel are timely prompted to check the equipment condition.

[0103] A gas monitoring and adjustment method for the curing process of a crystal component of the present invention, by collecting the temperature data and oxygen content data inside the curing tunnel furnace in real time, and performing temperature stability analysis and oxygen content trend analysis based on the temperature data and oxygen content data at multiple time points. When the temperature is unstable or the oxygen content rises to the warning line, the temperature and oxygen content inside the curing tunnel furnace are automatically adjusted. Thus, it is avoided that a batch of quartz wafers are scrapped due to the oxygen content rising to a relatively high level or the temperature having abnormal fluctuations. This application can improve the yield rate during the production of crystal oscillators and reduce the production cost.

[0104] As Figure 3 shown, this application also provides a gas monitoring and adjustment system for the curing process of a crystal component, including:

[0105] An acquisition module, configured to acquire the temperature data and oxygen content data at multiple time points in the current time period inside the curing tunnel furnace, where the current time period includes the current time point and a target number of time points before the current time point, the temperature data includes the temperature values at multiple positions inside the curing tunnel furnace, and the oxygen content data includes the oxygen content values at multiple positions inside the curing tunnel furnace;

[0106] A monitoring module, configured to determine the temperature stability of the current time period based on the temperature data at the multiple time points, and determine the oxygen content trend of the current time period based on the oxygen content data at the multiple time points;

[0107] An adjustment module, configured to adjust the gas temperature inside the curing tunnel furnace based on a preset temperature adjustment unit when the temperature of the current time period is unstable; and adjust the oxygen content inside the curing tunnel furnace based on a preset oxygen content adjustment unit when there is an upward trend in the oxygen content in the current time period and the oxygen content at the current time point triggers a warning line.

[0108] A gas monitoring and adjustment system for the curing process of a crystal component according to the present invention collects temperature data and oxygen content data inside the curing tunnel furnace in real time, and performs temperature stability analysis and oxygen content trend analysis based on the temperature data and oxygen content data at multiple time points. When the temperature is unstable or the oxygen content rises to the warning line, the temperature and oxygen content inside the curing tunnel furnace are automatically adjusted. Thereby, it is possible to avoid the scrapping of a batch of quartz wafers caused by the rise of the oxygen content to a relatively high level or abnormal fluctuations in temperature. This application can improve the yield rate during the production of crystal oscillators and reduce production costs.

[0109] This embodiment further provides an electronic terminal, including: a processor and a memory;

[0110] The memory is used to store a computer program, and the processor is used to execute the computer program stored in the memory so that the terminal executes any method in this embodiment.

[0111] For the computer-readable storage medium in this embodiment, those of ordinary skill in the art can understand that all or part of the steps of implementing the above method embodiments can be completed by hardware related to a computer program. The foregoing computer program can be stored in a computer-readable storage medium. When the program is executed, it executes the steps including the above method embodiments; and the foregoing storage medium includes: various media such as ROM, RAM, magnetic disk, or optical disc that can store program codes.

[0112] The electronic terminal provided in this embodiment includes a processor, a memory, a transceiver, and a communication interface. The memory and the communication interface are connected to the processor and the transceiver and complete communication with each other. The memory is used to store a computer program, the communication interface is used for communication, and the processor and the transceiver are used to run the computer program to make the electronic terminal execute each step of the above method.

[0113] In this embodiment, the memory may include a Random Access Memory (RAM), and may also include a non-volatile memory, such as at least one disk memory.

[0114] The above-mentioned processor may be a general-purpose processor, including a Central Processing Unit (CPU), a Network Processor (NP), etc.; it may also be a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field-Programmable Gate Array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components.

[0115] In the above embodiment, although the present invention has been described in conjunction with specific embodiments of the present invention, many substitutions, modifications, and variations of these embodiments will be apparent to those of ordinary skill in the art based on the foregoing description. The embodiments of the present invention are intended to cover all such substitutions, modifications, and variations that fall within the broad scope of the appended claims.

[0116] The above embodiments are only illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A gas monitoring and regulating method for the solidification process of a crystal component, characterized in that: Includes steps: Acquire temperature data and oxygen content data at multiple time points in a current time period inside the curing tunnel furnace, wherein the current time period includes the current time point and a target number of time points before the current time point, the temperature data includes temperature values ​​at multiple locations inside the curing tunnel furnace, and the oxygen content data includes oxygen content values ​​at multiple locations inside the curing tunnel furnace; Determining the temperature stability of the current time period based on the temperature data at the multiple time points, and determining the oxygen content trend of the current time period based on the oxygen content data at the multiple time points; determining the temperature stability of the current time period based on the temperature data at the multiple time points, including: calculating the average value of the temperature data corresponding to each time point, and obtaining the average temperature value of the multiple time points ,in, Indicates the time point sequence number; calculates the average temperature at each time point With the preset temperature reference value The absolute value of the difference ; Calculate the absolute value of the difference between multiple time points Variance and average ; In the variance is greater than a preset variance threshold, or the average value When the average value is greater than a preset threshold value, it is determined that the temperature in the current time period is unstable; When the temperature in the current time period is unstable, the gas temperature inside the curing tunnel furnace is adjusted based on a preset temperature adjustment unit; when there is an upward trend in the oxygen content in the current time period and the oxygen content at the current time point triggers a warning line, the oxygen content inside the curing tunnel furnace is adjusted based on a preset oxygen content adjustment unit; the gas temperature inside the curing tunnel furnace is adjusted based on a preset temperature adjustment unit, including: S11, calculating the temperature value at the current time point With the preset temperature reference value The difference ; S12, calculating the heat adjustment value inside the curing tunnel furnace based on the difference ,in, , is the specific heat capacity of the inert protective gas in the curing tunnel furnace, is the mass of the inert protective gas of the curing tunnel furnace; S13, based on the heat adjustment value Calculate the target temperature of the inert protective gas in the temperature control unit , ,in, is the mass of the inert protective gas in the temperature regulating unit; S14, based on the target temperature Adjust the internal heat of the curing tunnel furnace and re-collect the temperature value at the target time point , wherein the target time point is the time point at which the temperature values ​​at multiple locations inside the curing tunnel furnace are the same; S15, calculating the temperature value at the target time point With the preset temperature reference value The difference ;exist , take the target time point as the current time point, and return to step S11 until ;exist When the temperature of the gas inside the curing tunnel furnace is adjusted, is a preset first temperature difference threshold; based on the target temperature The curing tunnel furnace is internally regulated to heat the oven, including: calculating the target temperature With the preset temperature reference value The absolute value of the difference ;exist , heating the inert gas in the temperature regulating unit to the target temperature , open the air inlet end of the curing tunnel furnace and set it at the target temperature Inert gas is injected into the curing tunnel furnace to maintain the internal pressure balance of the curing tunnel furnace and complete the temperature regulation, wherein, is the preset second temperature difference threshold; , the difference Split and get or Temperature difference adjustment value, among which, ,or, , is the last temperature difference adjustment value; based on or The temperature of the inert gas in the temperature regulating unit is calculated based on a temperature difference adjustment value, the air inlet end of the curing tunnel furnace is opened, and the temperature regulator is heated to the corresponding temperature one by one and then injected into the curing tunnel furnace to maintain the internal air pressure balance of the curing tunnel furnace and complete the temperature regulation.

2. The gas monitoring and regulating method for the solidification process of a crystal component according to claim 1, characterized in that: Determining the oxygen content trend of the current time period based on the oxygen content data at the multiple time points includes: Calculate the average value of the oxygen content data corresponding to each time point to obtain the average value of the oxygen content at multiple time points; Mapping the average oxygen content at multiple time points into a two-dimensional coordinate system, wherein the horizontal axis of the two-dimensional coordinate system is the time axis, and the vertical axis of the two-dimensional coordinate system is the oxygen content data axis; Slide along the time axis based on the pre-built sliding window, and calculate the average value of all oxygen content average values ​​in the sliding window at each sliding. ,in, is the sliding sequence number of the sliding window; For any two adjacent average values, , it is determined that there is an increasing trend of oxygen content in the current time period.

3. The gas monitoring and regulating method for the solidification process of a crystal component according to claim 1, characterized in that: The oxygen content inside the curing tunnel furnace is adjusted based on a preset oxygen content adjustment unit, including: S21, heating the temperature of the inert gas in the oxygen content adjustment unit to a temperature value at a current time point; S22, opening the air inlet end of the curing tunnel furnace, and injecting the inert gas heated to the temperature value at the current time point into the curing tunnel furnace; S23, updating the current time point, and re-determining the oxygen content trend of the current time period based on the oxygen content data of multiple time points in the current time period; S24, when the oxygen content in the current time period is still on an upward trend and the oxygen content at the current time point triggers the warning line, return to step S21 until the oxygen content in the current time period is no longer on an upward trend, or the oxygen content at the current time point is lower than the warning line; S25, when the oxygen content in the current time period does not show an upward trend, or when the oxygen content at the current time point is lower than the warning line, the oxygen content adjustment is completed.

4. The gas monitoring and regulating method for the solidification process of a crystal component according to claim 1, characterized in that: When the gas temperature inside the curing tunnel furnace cannot be adjusted, an alarm message is sent to the target object.

5. The gas monitoring and regulating method for the solidification process of a crystal component according to claim 3, characterized in that: When the oxygen content adjustment cannot be completed, an alarm message is sent to the target object.

6. The gas monitoring and regulating method for the solidification process of a crystal component according to claim 1, characterized in that: The curing tunnel furnace is provided with an air inlet end and an exhaust end, the air inlet end of the curing tunnel furnace is connected to the output end of the temperature regulating unit and the output end of the oxygen content regulating unit, and the input end of the temperature regulating unit and the input end of the oxygen content regulating unit are both connected to an inert gas source; The air inlet end of the curing tunnel furnace and the exhaust end of the curing tunnel furnace are both provided with electric control valves.

7. A gas monitoring and regulating system for the solidification process of a crystal component, characterized in that: include: An acquisition module, used to acquire temperature data and oxygen content data at multiple time points in a current time period inside the curing tunnel furnace, wherein the current time period includes the current time point and a target number of time points before the current time point, the temperature data includes temperature values ​​at multiple locations inside the curing tunnel furnace, and the oxygen content data includes oxygen content values ​​at multiple locations inside the curing tunnel furnace; A monitoring module is used to determine the temperature stability of the current time period based on the temperature data at the multiple time points, and to determine the oxygen content trend of the current time period based on the oxygen content data at the multiple time points; determining the temperature stability of the current time period based on the temperature data at the multiple time points includes: calculating the average value of the temperature data corresponding to each time point to obtain the average temperature value of the multiple time points ,in, Indicates the time point sequence number; calculates the average temperature at each time point With the preset temperature reference value The absolute value of the difference ; Calculate the absolute value of the difference between multiple time points Variance and average ; In the variance is greater than a preset variance threshold, or the average value When the average value is greater than a preset threshold value, it is determined that the temperature in the current time period is unstable; The regulating module is used to regulate the gas temperature inside the curing tunnel furnace based on a preset temperature regulating unit when the temperature in the current time period is unstable; when there is an upward trend of oxygen content in the current time period and the oxygen content at the current time point triggers a warning line, regulate the oxygen content inside the curing tunnel furnace based on a preset oxygen content regulating unit; regulate the gas temperature inside the curing tunnel furnace based on a preset temperature regulating unit, including: S11, calculating the temperature value at the current time point With the preset temperature reference value The difference ; S12, calculating the heat adjustment value inside the curing tunnel furnace based on the difference ,in, , is the specific heat capacity of the inert protective gas in the curing tunnel furnace, is the mass of the inert protective gas of the curing tunnel furnace; S13, based on the heat adjustment value Calculate the target temperature of the inert protective gas in the temperature control unit , ,in, is the mass of the inert protective gas in the temperature regulating unit; S14, based on the target temperature Adjust the internal heat of the curing tunnel furnace and re-collect the temperature value at the target time point , wherein the target time point is the time point at which the temperature values ​​at multiple locations inside the curing tunnel furnace are the same; S15, calculating the temperature value at the target time point With the preset temperature reference value The difference ;exist , take the target time point as the current time point, and return to step S11 until ;exist When the temperature of the gas inside the curing tunnel furnace is adjusted, is a preset first temperature difference threshold; based on the target temperature The curing tunnel furnace is internally regulated to heat the oven, including: calculating the target temperature With the preset temperature reference value The absolute value of the difference ;exist , heating the inert gas in the temperature regulating unit to the target temperature , open the air inlet end of the curing tunnel furnace and set it at the target temperature Inert gas is injected into the curing tunnel furnace to maintain the internal pressure balance of the curing tunnel furnace and complete the temperature regulation, wherein, is the preset second temperature difference threshold; , the difference Split and get or Temperature difference adjustment value, among which, ,or, , is the last temperature difference adjustment value; based on or The temperature of the inert gas in the temperature regulating unit is calculated based on a temperature difference adjustment value, the air inlet end of the curing tunnel furnace is opened, and the temperature regulator is heated to the corresponding temperature one by one and then injected into the curing tunnel furnace to maintain the internal air pressure balance of the curing tunnel furnace and complete the temperature regulation.

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